JP2019030048A - Power conversion device - Google Patents

Abstract

To provide a power conversion device capable of accurately and promptly detecting a temperature of a switching element and capable of improving operation efficiency.SOLUTION: A power conversion device comprises: a semiconductor module 5 including multiple switching elements 500, 501, 510 and 511; a pre-driver 8; and a control circuit 9. The semiconductor module 5 is configured by integrally providing insides: multiple thermo-sensitive elements 520-523 for detecting respective temperatures of the multiple switching elements; an abnormality detection circuit for detecting temperature abnormality of the switching elements; a protection circuit which brings the switching elements into an OFF state and protects the switching elements from overheat; and a temperature information output circuit which generates and outputs temperature information signals based on detected signals of the multiple thermo-sensitive elements. The semiconductor module includes a temperature information output terminal OUT which outputs the temperature information signals to the control circuit.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a power conversion device including a semiconductor module having a plurality of switching elements.

In a power conversion device including a semiconductor module having a plurality of switching elements, it is required to protect the switching elements in the semiconductor module from overheating.
Patent Document 1 discloses a semiconductor module in which a temperature measuring element for detecting the temperature of the switching element is provided to protect the switching element. That is, Patent Document 1 discloses a configuration in which a temperature measuring element is connected to only one switching element in a semiconductor module incorporating a plurality of switching elements. In this case, only the temperature of the switching element whose temperature tends to be higher in design is measured.

Japanese Patent No. 5300784

  However, a specific switching element does not always reach the highest temperature due to factors such as switching element control methods and driver circuit variations. Further, when the switching element abnormally generates heat due to a failure or the like, the method of providing the temperature measuring element as disclosed in Patent Document 1 cannot cope with it.

  It is also important from the viewpoint of the operation efficiency of the power converter, etc., to be able to cope with the temperature of the switching element, for example, so that the operation must be stopped.

  This invention is made | formed in view of this subject, and provides the power converter device which can improve the operating efficiency while being able to detect the temperature of a switching element correctly and rapidly.

One embodiment of the present invention is a semiconductor module (5, 6, 7) including a plurality of switching elements (500, 501, 510, 511, 600, 601, 610, 611, 700, 701, 710, 711);
A pre-driver (8) for driving the switching element;
A control circuit (9) for controlling the pre-driver,
The semiconductor module includes a plurality of temperature sensing elements (520 to 523, 620 to 623, 720 to 723) that detect temperatures of the plurality of switching elements, respectively.
An abnormality detection circuit (544) for detecting a temperature abnormality of the switching element based on a detection signal of the temperature sensing element;
A protection circuit (55) for turning off the switching element and protecting the switching element from overheating when the abnormality detection circuit detects a temperature abnormality;
A temperature information output circuit (541) for generating and outputting a temperature information signal based on the detection signals of the plurality of temperature sensing elements;
Is provided integrally inside,
The semiconductor module is in a power converter (3) having a temperature information output terminal (OUT) for outputting the temperature information signal to the control circuit.

  The power converter includes a plurality of temperature sensing elements that detect temperatures of the plurality of switching elements, respectively. Therefore, it is possible to reliably detect and protect the temperatures of the plurality of switching elements.

  Further, the temperature sensing element, the abnormality detection circuit, and the protection circuit are integrally provided in the semiconductor module. Therefore, the temperature sensing element and the abnormality detection circuit are provided in the vicinity of the switching element that is a temperature detection target. Further, the protection circuit is provided in the vicinity of the temperature sensitive element and the switching element to be protected. Therefore, the temperature of the switching element can be accurately detected. Further, since it is not necessary to provide a separate temperature sensor for detecting the temperature of the switching element, the number of parts can be reduced. Further, errors in detection results due to the influence of wiring resistance and the like can be suppressed. Further, detection results and control signal transmission delays due to the influence of wiring can be suppressed. Accordingly, the temperature abnormality of the switching element can be accurately detected, and the switching element can be protected quickly.

  The semiconductor module has a temperature information output circuit and a temperature information output terminal. Accordingly, it becomes possible to control the pre-driver by the control circuit based on the temperature information of the switching element. Therefore, it is possible to control the on / off driving of the switching element according to the temperature condition of each switching element to suppress the temperature abnormality of the switching element.

As mentioned above, according to the said aspect, while being able to detect the temperature of a switching element correctly and rapidly, the power converter device which can improve driving | operation efficiency can be provided.
In addition, the code | symbol in the parenthesis described in the means to solve a claim and a subject shows the correspondence with the specific means as described in embodiment mentioned later, and limits the technical scope of this invention. It is not a thing.

FIG. 2 is a circuit diagram of the controller-integrated rotating electrical machine in the first embodiment. FIG. 3 is a circuit diagram of one semiconductor module in the first embodiment. FIG. 3 is a circuit diagram of an abnormality detection circuit in the first embodiment. FIG. 3 is a circuit diagram of a protection circuit in the first embodiment. FIG. 3 is a circuit diagram of a temperature information output circuit in the first embodiment. FIG. 3 is a circuit diagram of a selector in the first embodiment. FIG. 3 is a circuit diagram of an amplification factor correction unit in the first embodiment. FIG. 5 is a circuit diagram of another semiconductor module in the first embodiment. FIG. 6 is a circuit diagram of still another semiconductor module in the first embodiment. 3 is a time chart for explaining the operation of the abnormality detection circuit in the first embodiment. 3 is a time chart for explaining the operation of the temperature information output circuit in the first embodiment. FIG. 3 is a plan view of the semiconductor module according to the first embodiment. The top view of the semiconductor module in a comparative example. The circuit diagram of the temperature information output circuit in Embodiment 2. FIG. 9 is a time chart for explaining the operation of the temperature information output circuit in the second embodiment.

(Embodiment 1)
DESCRIPTION OF EMBODIMENTS Embodiments relating to a power conversion device and a control device-integrated rotating electrical machine to which the power conversion device is applied will be described with reference to the drawings.
In particular, in the present embodiment, a controller-integrated rotating electrical machine mounted on a vehicle will be described.

  A controller-integrated rotating electrical machine 1 shown in FIG. 1 is a device that is mounted on a vehicle and generates a driving force for driving the vehicle when electric power is supplied from a battery BAT. Moreover, it is also a device that generates electric power for charging the battery BAT when a driving force is supplied from the engine of the vehicle. The controller-integrated rotating electrical machine 1 includes a rotating electrical machine 2 and a control device 3. Here, the control device 3 corresponds to the power conversion device of the present disclosure.

The power conversion device that is the control device 3 includes semiconductor modules 5, 6, and 7 having a plurality of switching elements, a pre-driver 8 that drives the switching elements, and a control circuit 9 that controls the pre-driver 8.
Each semiconductor module 5, 6, 7 is integrally provided with a plurality of temperature sensing elements, an abnormality detection circuit 544, a protection circuit 55, and a temperature information output circuit 541.

The plurality of temperature sensitive elements respectively detect the temperatures of the plurality of switching elements.
The abnormality detection circuit 544 detects a temperature abnormality of the switching element based on the detection signal of the temperature sensitive element.
When the abnormality detection circuit 544 detects a temperature abnormality, the protection circuit 55 turns off the switching element to protect the switching element from overheating.
The temperature information output circuit 541 generates and outputs a temperature information signal based on the detection signals of the plurality of temperature sensitive elements.
The semiconductor modules 5, 6, and 7 have a temperature information output terminal OUT that outputs a temperature information signal to the control circuit 9.

  The control device 3, which is a power converter, is configured to convert DC power to AC power and drive the AC rotating electrical machine 2, and converts AC power generated by the rotating electrical machine 2 to DC power. The battery BAT is configured to be charged. As described above, the control device 3 is integrated with the rotating electrical machine 2.

  The rotating electrical machine 2 is a device that generates a driving force for driving the vehicle when electric power is supplied from the battery BAT. Moreover, it is also a device that generates electric power for charging the battery BAT when a driving force is supplied from the engine. The rotating electrical machine 2 includes a stator 20, a rotor 21, and a rotation angle detection device 22.

  The stator 20 is a member that forms a part of a magnetic path and generates a rotating magnetic field when a current flows. Moreover, while constituting a part of a magnetic path, it is also a member that generates alternating current by interlinking with the magnetic flux generated by the rotor 21. The stator 20 includes stator windings 200 and 201. The stator winding 200 is configured by Y-connecting a U-phase winding 200a, a V-phase winding 200b, and a W-phase winding 200c. The stator winding 201 is configured by Y-connecting a U-phase winding 201a, a V-phase winding 201b, and a W-phase winding 201c. The U-phase windings 200a and 201a, the V-phase windings 200b and 201b, and the W-phase windings 200c and 201c are connected to the control device 3, respectively.

  The rotor 21 is a member that forms part of a magnetic path and forms a magnetic pole when a current flows. The rotor 21 includes a field winding 210. The field winding 210 is connected to the control device 3.

  The rotation angle detection device 22 is a device that detects the rotation angle of the rotor 21. The rotation angle detection device 22 is connected to the control device 3.

  The control device 3 is a device that controls electric power supplied from the battery BAT to the rotating electrical machine 2 in order to cause the rotating electrical machine 2 to generate a driving force. Moreover, in order to charge battery BAT, it is also an apparatus which converts the electric power which the rotary electric machine 2 generated, and supplies to battery BAT. The control device 3 includes a smoothing capacitor 4, semiconductor modules 5, 6, 7, a pre-driver 8, and a control circuit 9.

  The smoothing capacitor 4 is an element for smoothing the direct current supplied from the battery BAT. One end of the smoothing capacitor 4 is connected to the positive terminal of the battery BAT. The other end is connected to the ground GND, which is a potential reference point to which the negative end of the battery BAT is connected. Specifically, it is connected to the vehicle body.

  The semiconductor modules 5, 6, and 7 are modules that are controlled by the control circuit 9, convert a direct current supplied from the battery BAT into a three-phase alternating current, and supply the three-phase alternating current to the stator windings 200 and 201. Further, it is also a module that converts the three-phase alternating current generated by the stator windings 200 and 201 into direct current and supplies it to the battery BAT. Specifically, the semiconductor module 5 and a part of the semiconductor module 6 convert the direct current supplied from the battery BAT into a three-phase alternating current, and supply the three-phase alternating current to the stator winding 200. Further, the three-phase alternating current generated by the stator winding 200 is converted into direct current and supplied to the battery BAT. A part of the semiconductor module 6 and the semiconductor module 7 convert the direct current supplied from the battery BAT into a three-phase alternating current and supply it to the stator winding 201. Further, the three-phase alternating current generated by the stator winding 201 is converted into direct current and supplied to the battery BAT.

  As shown in FIG. 2, the semiconductor module 5 includes switching circuits 50 and 51, temperature sensing diodes 520 to 523 as temperature sensing elements, and a protection IC 53. There is one temperature information output terminal OUT provided in the semiconductor module 5. Note that there is one temperature information output terminal OUT provided in each of the semiconductor modules 6 and 7. That is, each of the semiconductor modules 5, 6, and 7 is configured to output a temperature information signal from one temperature information output terminal OUT to the control circuit 9. Each of the semiconductor modules 5, 6, and 7 is configured to output a temperature information signal to the control circuit 9 via one signal line at each temperature information output terminal OUT.

  The three semiconductor modules 5, 6, and 7 have substantially the same configuration and function as shown in FIGS. In the present specification, common items of the three semiconductor modules 5, 6, and 7 will be described in detail using the semiconductor module 5 on behalf of them. The semiconductor modules 6 and 7 are the same as the semiconductor module 5 with respect to parts not specifically mentioned.

  The switching circuit 50 is a circuit that is controlled by the control circuit 9 and performs switching to convert a direct current supplied from the battery BAT into an alternating current and supply the alternating current to the U-phase winding 200a. Further, the AC circuit supplied from the U-phase winding 200a is converted into a direct current and supplied to the battery BAT. The switching circuit 50 includes FETs 500 and 501 and a resistor 502. The FETs 500 and 501 are switching elements that convert direct current into alternating current by switching. The resistor 502 is an element for detecting current. The FETs 500 and 501 include a diode between the drain and the source. The FETs 500 and 501 are connected in series. The source of the FET 500 is connected to the drain of the FET 501. The drain of the FET 500 is connected to the terminal B of the semiconductor module 5 connected to the battery BAT. The source of the FET 501 is connected to the terminal G of the semiconductor module 5 connected to the ground GND through the resistor 502. One end of the resistor 502 on the FET 501 side is connected to the terminal S1 + of the semiconductor module 5 connected to the control circuit 9 and the terminal LS1 of the protection IC 53, respectively. The other end of the resistor 502 on the terminal G side is connected to a terminal S 1-of the semiconductor module 5 connected to the control circuit 9. A series connection point of the FETs 500 and 501 is connected to a terminal P1 of the semiconductor module 5 connected to the U-phase winding 200a.

  The switching circuit 50 complementarily switches the FETs 500 and 501 at a predetermined timing, thereby converting the direct current supplied from the battery BAT to alternating current and supplying the alternating current to the U-phase winding 200a. Further, the alternating current supplied from the U-phase winding 200a is converted into direct current by the diodes of the FETs 500 and 501, and supplied to the battery BAT.

  The switching circuit 51 is a circuit that is controlled by the control circuit 9 and converts the direct current supplied from the battery BAT into alternating current by switching and supplies the alternating current to the V-phase winding 200b. In addition, the AC circuit supplied from the V-phase winding 200b is converted into a direct current and supplied to the battery BAT. The switching circuit 51 includes FETs 510 and 511 and a resistor 512. The FETs 510 and 511 are switching elements that convert direct current into alternating current by switching. The resistor 512 is an element for detecting current. The FETs 510 and 511 include a diode between the drain and the source. The FETs 510 and 511 are connected in series. The source of the FET 510 is connected to the drain of the FET 511. The drain of the FET 510 is connected to the terminal B of the semiconductor module 5 connected to the battery BAT. The source of the FET 501 is connected to the terminal G of the semiconductor module 5 connected to the ground GND through the resistor 512. One end of the resistor 512 on the FET 511 side is connected to the terminal S2 + of the semiconductor module 5 connected to the control circuit 9 and the terminal LS2 of the protection IC 53, respectively. The other end of the resistor 512 on the terminal G side is connected to the terminal S <b> 2-of the semiconductor module 5 connected to the control circuit 9. A series connection point of the FETs 510 and 511 is connected to a terminal P2 of the semiconductor module 5 connected to the V-phase winding 200b.

  The switching circuit 51 complementarily switches the FETs 510 and 511 at a predetermined timing, thereby converting the direct current supplied from the battery BAT into alternating current and supplying the alternating current to the V-phase winding 200b. Further, the alternating current supplied from the V-phase winding 200b is converted into direct current by the diodes of the FETs 510 and 511 and supplied to the battery BAT.

  The semiconductor module 5 includes a plurality of upper arm switching elements and lower arm switching elements in the switching circuits 50 and 51 as switching elements. In the present embodiment, the FETs 500 and 510 are upper arm switching elements, and the FETs 501 and 511 are lower arm switching elements.

  The temperature sensitive diodes 520 to 523 are elements for detecting the temperatures of the FETs 500, 501, 510, and 511, respectively. Specifically, it is an element that outputs a voltage according to temperature by passing a constant current. More specifically, it is an element whose voltage drops as the temperature rises. In the present embodiment, each of the temperature sensitive diodes 520 to 523 is formed by connecting four elements in series and is connected to the protection IC 53.

  The protection IC 53 is an element that is integrally provided in the semiconductor module 5, detects an abnormality related to the FETs 500, 501, 510, and 511 and protects the FETs 500, 501, 510, and 511. The protection IC 53 includes an abnormality detection circuit 544 shown in FIG. 3, a protection circuit 55 shown in FIG. 4, and a temperature information output circuit 541 shown in FIG.

  An abnormality detection circuit 544 illustrated in FIG. 3 is a circuit for detecting temperature abnormality of the FETs 500, 501, 510, and 511. The abnormality detection circuit 544 includes constant current circuits 544a to 544d, comparators 544e to 544h, filter circuits 544i to 544l, an OR circuit 544m, and a latch circuit 544n.

  The constant current circuits 544a to 544d are circuits for supplying a constant current to the temperature sensitive diodes 520 to 523. The constant current circuits 544a to 544d are connected to the power source of the voltage Vc. The output terminals of the constant current circuits 544a to 544d are connected to terminals AH1, AL1, AH2, and AL2 of the protection IC 53 connected to the anodes of the temperature sensitive diodes 520 to 523, respectively. The terminals KH1, KL1, KH2, and KL2 of the protection IC 53 connected to the cathodes of the temperature sensitive diodes 520 to 523 are connected to the terminal G of the protection IC 53 connected to the ground GND.

  The comparators 544e to 544h are elements that compare the voltage between the terminals of the temperature sensitive diodes 520 to 523 with the voltage threshold Vth4 and output the comparison result. The voltage threshold Vth4 is set to a predetermined voltage corresponding to the temperature threshold at which the FET determines that the temperature is abnormal based on the voltage between the terminals of the temperature sensitive diodes 520 to 523. In the comparators 544e to 544h, when the temperature of the FETs 500, 501, 510, and 511 is smaller than the temperature threshold, the voltage between the terminals of the temperature sensitive diodes 520 to 523 becomes larger than the voltage threshold Vth4, and the output voltage becomes the high level H. On the other hand, when the temperature of the FETs 500, 501, 510, and 511 is equal to or higher than the temperature threshold, the voltage between the terminals of the temperature sensitive diodes 520 to 523 is equal to or lower than the voltage threshold Vth4, and the output voltage becomes the low level L. The non-inverting input terminals of the comparators 544e to 544h are connected to terminals AH1, AL1, AH2, and AL2 of the protection IC 53 connected to the anodes of the temperature-sensitive diodes 520 to 523, and the inverting input terminal is connected to a reference power supply set to the voltage threshold Vth4. It is connected.

  The filter circuits 544i to 544l are circuits that remove noise included in the outputs of the comparators 544e to 544h and output after a predetermined processing time has elapsed. Specifically, it is a digital filter. The input terminals of the filter circuits 544i to 544l are connected to the output terminals of the comparators 544e to 544h, respectively.

  The OR circuit 544m is a circuit that calculates the logical sum of the outputs of the comparators 544e to 544h from which noise has been removed by the filter circuits 544i to 544l, and outputs the calculation result. When at least one of the outputs of the comparators 544e to 544h from which noise has been removed by the filter circuits 544i to 544l is at the low level L indicating that the temperature of the FET is equal to or higher than the temperature threshold, the OR circuit 544m , 510 and 511 are determined to be abnormal, and the output logic level becomes the high level H. The four input terminals of the OR circuit 544m are connected to the output terminals of the filter circuits 544i to 544l, respectively.

  The latch circuit 544n is a circuit that holds the output of the OR circuit 544m for a predetermined hold time and outputs it as an FET temperature abnormality. When the logical level of the output of the OR circuit 544m is the high level H, the logical level of the output of the latch circuit 544n becomes the high level H for a predetermined hold time. That is, when the temperature abnormality of the FETs 500, 501, 510, and 511 is detected, the output logic level becomes the high level H. The input terminal of the latch circuit 544n is connected to the output terminal of the OR circuit 544m.

  The protection circuit 55 shown in FIG. 4 is a circuit that protects the FETs 500, 501, 510, and 511 by turning off the FETs 500, 501, 510, and 511 when the abnormality detection circuit 544 detects an abnormality. The protection circuit 55 includes a processing circuit 550 and a pre-driver 551.

  The processing circuit 550 is a circuit that outputs a drive signal for turning off the FETs 500, 501, 510, and 511 when the abnormality detection circuit 544 detects an abnormality. Specifically, this is a circuit that outputs a drive signal for turning off the FETs 500, 501, 510, and 511 when the FET temperature abnormality is at the high level H. The processing circuit 550 is set so that the turn-off time when the FET is turned off is longer than that of the control circuit 9. The input terminal of the processing circuit 550 is connected to the output terminal of the abnormality detection circuit 544 shown in FIG. Specifically, it is connected to the output terminal of the latch circuit 544n.

  The pre-driver 551 shown in FIG. 4 is a circuit that is controlled by the processing circuit 550 and turns off the FETs 500, 501, 510, and 511 shown in FIG. 2 regardless of the output of the pre-driver 8. As shown in FIG. 4, the pre-driver 551 includes FETs 551a to 551d, resistors 551e to 551h, and drive circuits 551i and 551j.

The FETs 551a to 551d are turned on to connect the gates of the FETs 500, 501, 510, and 511 to the ground GND, thereby reducing the gate-drain voltage Vgs. 511 is a switching element that turns off 511. The resistors 551e to 551h are elements for limiting the current that flows when the gates of the FETs 500, 501, 510, and 511 are connected to the ground GND. The drains of the FETs 551a to 551d are connected to the terminals HG1, LG1, HG2, and LG2 of the protection IC 53 via resistors 551e to 551h, respectively. The terminals HG1, LG1, HG2, and LG2 of the protection IC 53 are connected to the terminals HG1, LG1, HG2, and LG2 of the semiconductor module 5 that are connected to the gates of the FETs 500, 501, 510, and 511. The sources of the FETs 551a to 551d are connected to the terminal G of the protection IC 53. The terminal G of the protection IC 53 is connected to the terminal G of the semiconductor module 5 connected to the ground GND.

  The drive circuits 551i and 551j are circuits that are controlled by the processing circuit 550 and turn on the FETs 551a to 551d. When the processing circuit 550 outputs a drive signal for turning off the FETs 500, 501, 510, and 511, the drive circuits 551i and 551j turn on the FETs 551a to 551d. The input terminals of the drive circuits 551i and 551j are connected to the output terminal of the processing circuit 550, and the output terminals are connected to the gates of the FETs 551a to 551d.

  The temperature information output circuit 541 shown in FIG. 5 generates a temperature information signal by selecting and using the detection signal having the highest corresponding temperature among the detection signals of the plurality of temperature sensitive diodes 520 to 523. The temperature information output circuit 541 includes a plurality of selectors 541a to 541c. The temperature information output circuit 541 includes an amplifier circuit 541d that amplifies the temperature information signal. Furthermore, the temperature information output circuit 541 includes an amplification factor correction unit 541e and a limiter 541f, which will be described later.

  The temperature information output circuit 541 receives the voltages V0 to V3 between the terminals of the temperature sensitive diodes 520 to 523 as detection signals of the temperatures of the FETs 500, 501, 510, and 511. The detection signal V0 of the temperature sensitive diode 520 input via the terminal AH1 and the detection signal V1 of the temperature sensitive diode 521 input via the terminal AL1 are input to the selector 541a. The two detection signals V0 and V1 input are determined by the selector 541a. In the selector 541a, the detection signal determined to be smaller is selected and output from the output terminal Y.

  Similarly, the detection signal V2 of the temperature sensing diode 522 input via the terminal AH2 and the detection signal V3 of the temperature sensing diode 523 input via the terminal AL2 are input to the selector 541b. The two detection signals V2 and V3 input are determined by the selector 541b. In the selector 541b, a detection signal determined to be smaller is selected and output from the output terminal Y.

  The detection signal selected by the selector 541a and the detection signal selected by the selector 541b are respectively input to the selector 541c. The selector 541c also determines the magnitude of these detection signals, selects a smaller detection signal, and outputs it from the output terminal Y. In this way, the detection signal determined to be the smallest among the detection signals V0 to V3 of the four temperature sensitive diodes 520 to 523 is input to the amplifier circuit 541d.

  The selectors 541a to 541c set the output to the amplification factor correction unit 541e to high when the signals input to the input terminals A and B (referred to as voltages VA and VB, respectively) are VA <VB. When the level is H and VA ≧ VB, the output to the amplification factor correction unit 541e is set to the low level L. In the selector 541a, V0 is input to the input terminal A and V1 is input to the input terminal B. In the selector 541b, V2 is input to the input terminal A, and V3 is input to the input terminal B. In the selector 541c, the detection signal selected by the selector 541a is input to the input terminal A, and the detection signal selected by the selector 541b is input to the input terminal B.

  The amplifier circuit 541d amplifies the detection signal by amplifying the difference between the two input voltages at a predetermined amplification factor. Here, one of the two input voltages is the voltage of the detection signal, and the other is the reference voltage. The amplifier circuit 541d includes an operational amplifier and a plurality of resistors r1, r2, and r3. The output of the selector 541c is input to the non-inverting input terminal of the operational amplifier.

  The output terminal of the operational amplifier is connected to one end of the resistor r1. The other end of the resistor r1 is connected to one ends of the other resistors r2 and r3, and is connected to the inverting input terminal of the operational amplifier. The other end of the resistor r2 is grounded. The other end of the resistor r3 is connected to the amplification factor correction unit 541e. The amplification factor correction unit 541e is configured to adjust the amplification factor of the amplification circuit 541d by changing the potential of the low potential side terminal of the resistor r3.

  That is, the amplifier circuit 541d is configured to amplify the temperature information signal at an amplification factor appropriately selected from a plurality of amplification factors stored in advance.

  The amplification factor correction unit 541e selects the amplification factor based on the signals obtained from the selectors 541a to 541c, and adjusts the amplification factor of the amplification circuit 541d. That is, the information of the detection signal selected by each selector 541a-541c is input from the selectors 541a-541c to the amplification factor correction unit 541e. That is, which temperature detection diode detection signal is input to the amplification circuit 541d is input to the amplification factor correction unit 541e. Based on this information, the amplification factor is selected. That is, the amplification factor corresponding to the temperature sensitive elements 520, 521, 522, and 523 that output the detection signal input to the amplifier circuit 541d is selected.

  In the amplification factor correction unit 541e, amplification factor correction values corresponding to the temperature sensitive diodes 520, 521, 522, and 523 are stored in advance. That is, there are individual differences in the temperature sensitive diodes 520, 521, 522, and 523, and differences may occur in the installation state in the semiconductor module 5. Therefore, the relationship between the terminal voltages V0 to V3 that are detection signals of the temperature sensitive diodes 520 to 523 and the temperatures of the FETs 500, 501, 510, and 511 that are the detection targets of the temperature sensitive diodes 520 to 523 is as follows. It can be different for each diode 520-523. Therefore, the relationship between the temperature sensitive diodes 520 to 523 and the temperature of the FETs 500, 501, 510, and 511 is measured in advance. Then, a correction value of the amplification factor in the amplifier circuit 541d is obtained from these relationships. That is, for example, the amplification factor is increased for a detection signal of a temperature-sensitive diode with relatively low sensitivity. On the other hand, the amplification factor is reduced for the detection signal of the temperature sensitive diode having relatively high sensitivity.

  In this way, individual amplification factors are prepared corresponding to the detection signals of the plurality of temperature sensitive diodes 520 to 523. Then, the amplification factor in the amplifier circuit 541d is determined corresponding to the temperature sensitive diodes 520 to 523 which are the output sources of the detection signals selected by the selectors 541a to 541c. Thereby, the accuracy of the temperature information output from the temperature information output circuit 541 is improved.

  Further, the temperature information signal amplified by the amplifier circuit 541d passes through the limiter 541f and is then output from the temperature information output terminal OUT to the control circuit 9. The limiter 541f causes the temperature information signal (that is, voltage) after amplification to be within a predetermined output value range. That is, the temperature information output circuit 541 is configured to output the temperature information signal to the control circuit 9 at an output value that is equal to or higher than a predetermined lower limit output value Vmin and equal to or lower than a predetermined upper limit output value Vmax.

  As shown in FIG. 5, the limiter 541f includes a diode d1 having an anode connected to the low potential portion and a diode d2 having a cathode connected to the high potential portion. The cathode of the diode d1 and the anode of the diode d2 are connected to an output wiring between the amplifier circuit 541d and the temperature information output terminal OUT. The low potential portion is a portion where the potential is the lower limit output value Vmin. The high potential portion is a portion where the potential is the upper limit output value Vmax. Thereby, the limiter 541f makes the temperature information signal output from the temperature information output terminal OUT within the range of the predetermined voltage value.

FIG. 6 shows a circuit configuration of the selectors 541a to 541c. All of the three selectors 541a to 541c have the same circuit configuration.
The selectors 541a to 541c have comparators and analog switches S1 and S2.

  The detection signals VA and VB input from the input terminals A and B of the selectors 541a to 541c are compared in the comparator. When VA <VB, the output level from the output terminal E to the amplification factor correction unit 541e is high level H. It becomes. At this time, the switch S1 is turned on and the switch S2 is turned off. As a result, VA is output from the output terminal Y.

  On the other hand, when the comparator determines that VA ≧ VB, the output level from the output terminal E to the amplification factor correction unit 541e becomes the low level L. At this time, the switch S1 is turned off and the switch S2 is turned on. As a result, VB is output from the output terminal Y.

FIG. 7 shows a circuit configuration of the amplification factor correction unit 541e.
The amplification factor correction unit 541e has four AND circuits and four analog switches. Then, any one of the four switches S3, S4, S5, and S6 is turned on in response to an input signal input from the output terminal E of the selectors 541a to 541c via the input terminals IN1, IN2, and IN3. . Accordingly, any one of the amplification factors K0, K1, K2, and K3 stored in the amplification factor correction unit 541e is output from the output terminal Y.

  For example, when both the input from the input terminal IN1 and the input from the input terminal IN3 are at the high level H, only the switch S3 is turned on and the amplification factor K0 is output. In other words, this case corresponds to the case where the detection signal V0 of the temperature sensing diode 520 is the lowest, so that the amplification factor K0 corresponding to the temperature sensing diode 520 is output to the amplification circuit 541d.

  The semiconductor module 6 shown in FIG. 8 includes switching circuits 60 and 61, temperature sensitive diodes 620 to 623, and a protection IC 63. The switching circuit 60 includes FETs 600 and 601 that are switching elements, and a resistor 602. The switching circuit 61 includes FETs 610 and 611 that are switching elements, and a resistor 612.

  The switching circuits 60 and 61 are the same circuits as the switching circuits 50 and 51 of the semiconductor module 5 except for the connection of the series connection point of the FETs 600 and 601 and the series connection point of the FETs 610 and 611. A series connection point of the FETs 600 and 601 is connected to a terminal P1 of the semiconductor module 6 connected to the W-phase winding 200c. A series connection point of the FETs 610 and 611 is connected to a terminal P2 of the semiconductor module 6 connected to the U-phase winding 201a. The temperature sensing diodes 620 to 623 and the protection IC 63 which are temperature sensing elements are the same as the temperature sensing diodes 520 to 523 and the protection IC 53 of the semiconductor module 5 and have the same configuration.

  The semiconductor module 7 shown in FIG. 9 includes switching circuits 70 and 71, temperature sensitive diodes 720 to 723, and a protection IC 73. The switching circuit 70 includes FETs 700 and 701 that are switching elements, and a resistor 702. The switching circuit 71 includes FETs 710 and 711 that are switching elements, and a resistor 712.

  The switching circuits 70 and 71 are the same circuits as the switching circuits 50 and 51 of the semiconductor module 5 except for the connection of the series connection point of the FETs 700 and 701 and the connection point of the series connection of the FETs 710 and 711. A series connection point of the FETs 700 and 701 is connected to a terminal P1 of the semiconductor module 7 connected to the V-phase winding 201b. A series connection point of the FETs 710 and 711 is connected to a terminal P2 of the semiconductor module 7 connected to the W-phase winding 201c. The temperature sensing diodes 720 to 723 and the protection IC 73 which are temperature sensing elements are the same as the temperature sensing diodes 520 to 523 and the protection IC 53 of the semiconductor module 5 and have the same configuration.

  The pre-driver 8 shown in FIG. 1 is controlled by the control circuit 9, and the FETs 500, 501, 510, 511, 600, 601, 610, 611 of the semiconductor modules 5, 6, and 7 shown in FIGS. This circuit drives 700, 701, 710, and 711. As shown in FIG. 1, the pre-driver 8 is connected to the positive terminal of the battery BAT. The output terminal of the pre-driver 8 is the semiconductor module 5 connected to the gates of the FETs 500, 501, 510, 511, 600, 601, 610, 611, 700, 701, 710, 711 shown in FIGS. , 6 and 7 are connected to terminals HG1, LG1, HG2 and LG2, respectively.

  The control circuit 9 shown in FIG. 1 controls the direct current supplied from the battery BAT to the field winding 210 when generating a driving force in the rotating electrical machine 2, and through the pre-driver 8, FIG. By switching FETs 500, 501, 510, 511, 600, 601, 610, 611, 700, 701, 710, and 711 of the semiconductor modules 5, 6, and 7 shown in FIG. 9, the power is supplied from the battery BAT shown in FIG. This circuit converts the direct current to three-phase alternating current and supplies it to the stator windings 200 and 201. When the battery BAT is charged, the direct current supplied from the battery BAT to the field winding 210 is controlled, and the FETs 500, 501, 510, and 511 shown in FIGS. , 600, 601, 610, 611, 700, 701, 710, 711, the three-phase alternating current generated by the stator windings 200, 201 shown in FIG. 1 is converted into direct current by the FET diode. It is also a circuit that supplies the battery BAT. When the control circuit 9 generates a driving force in the rotating electrical machine 2, the detection result of the rotation angle detection device 22 and the resistors 502, 512, and 512 of the semiconductor modules 5, 6, and 7 shown in FIGS. Based on the detection results of 602, 612, 702, and 712, the FETs 500, 501, 510, 511, 600, 601, 610, 611, 700, 701, 710, and 711 are switched.

  As shown in FIG. 1, the control circuit 9 is connected to the positive terminal of the battery BAT, and is connected to the negative terminal of the battery BAT via the ground GND. The control circuit 9 is connected to the field winding 210. The input terminal of the control circuit 9 is the rotation angle detection device 22 and the terminals of the semiconductor modules 5, 6, 7 connected to the resistors 502, 512, 602, 612, 702, 712 shown in FIGS. Connected to S1 +, S1-, S2 +, and S2-, respectively. The output end is connected to the input end of the pre-driver 8.

  Next, the operation of the controller-integrated dynamoelectric machine will be described with reference to FIG. 1, FIG. 2, FIG. 8, and FIG. First, an operation when generating a driving force for driving the vehicle in the rotating electrical machine will be described.

  When the ignition switch is turned on in the vehicle, the control circuit 9 shown in FIG. 1 controls the direct current supplied from the battery BAT to the field winding 210. When a direct current is supplied to the field winding 210, a magnetic pole is formed on the rotor 21.

  The control circuit 9 has three direct currents supplied from the battery BAT based on the detection result of the rotation angle detection device 22 and the detection results of the resistors 502, 512, and 602 of the semiconductor modules 5 and 6 shown in FIGS. The FETs 500 and 501, the FETs 510 and 511, and the FETs 600 and 601 of the semiconductor modules 5 and 6 are complementarily switched at predetermined timings via the pre-driver 8 so as to be converted into phase alternating current. Further, the direct current supplied from the battery BAT based on the detection result of the rotation angle detection device 22 and the detection results of the resistors 612, 702, and 712 of the semiconductor modules 6 and 7 shown in FIGS. The FETs 610 and 611, the FETs 700 and 701, and the FETs 710 and 711 of the semiconductor modules 6 and 7 are switched in a complementary manner at a predetermined timing through the pre-driver 8 so as to be converted. As a result, three-phase alternating current is supplied to the stator windings 200 and 201, respectively. Thereby, the rotary electric machine 2 generates a driving force for driving the vehicle.

  Next, the operation when charging the battery will be described.

  In a state where direct current is supplied to the field winding 210 shown in FIG. 1 and magnetic poles are formed on the rotor 21, when driving force is supplied from the engine, the stator windings 200 and 201 each have three phases. Generate alternating current. The FETs 500, 501, 510, 511, 600, 601, 610, 611, 700, 701, 710, and 711 of the semiconductor modules 5, 6, and 7 are turned off. The diodes of the FETs 500, 501, 510, 511, 600 and 601 of the semiconductor modules 5 and 6 constitute a rectifier circuit and rectify the three-phase alternating current generated by the stator winding 200. The diodes of the FETs 610, 611, 700, 701, 710, and 711 of the semiconductor modules 6 and 7 constitute a rectifier circuit and rectify the three-phase alternating current generated by the stator winding 201. As a result, the three-phase alternating current generated by the stator windings 200 and 201 is converted into direct current and supplied to the battery BAT. Thereby, the battery BAT is charged by the electric power generated by the rotating electrical machine 2.

  Next, the detection operation of the temperature abnormality of the FET will be described with reference to FIGS. The detection operation of the temperature abnormality of the FET in the semiconductor modules 5, 6, 7 is the same. Therefore, the semiconductor module 5 will be described.

  The temperature sensitive diodes 520 to 523 shown in FIG. 3 output a voltage corresponding to the temperature of the FETs 500, 501, 510 and 511. When the temperature of the FETs 500, 501, 510, and 511 is smaller than the temperature threshold, the comparators 544e to 544h have the voltage V0 to V3 between the terminals of the temperature sensitive diodes 520 to 523 larger than the voltage threshold Vth4 and the output voltage is set to the high level H. Become. On the other hand, when the temperature of the FETs 500, 501, 510, and 511 is equal to or higher than the temperature threshold value, the voltage V0 to V3 between the terminals of the temperature sensitive diodes 520 to 523 becomes equal to or lower than the voltage threshold value Vth4, and the output voltage becomes low level L.

  The filter circuits 544i to 544l remove noise included in the outputs of the comparators 544e to 544h, and output after a predetermined processing time has elapsed. The processing time can be set to, for example, about 0.1 ms. The OR circuit 544m has a low level L indicating that at least one of the outputs of the comparators 544e to 544h from which noise has been removed by the filter circuits 544i to 544l indicates that the temperature of the FET is equal to or higher than a temperature threshold (for example, about 200 ° C.). If it is, it is determined that the temperature of any of the FETs 500, 501, 510, and 511 is abnormal, and the logic level of the output becomes the high level H. When the logic level of the output of the OR circuit 544m is a high level H indicating that the temperature of at least one of the FETs 500, 501, 510, and 511 is abnormal, the latch circuit 544n has a predetermined hold time and an output logic level. Becomes high level H. That is, the FET temperature abnormality output from the latch circuit 544n becomes the high level H indicating the occurrence of the abnormality. The hold time can be set to about 100 milliseconds, for example.

  For example, when the temperature of the FET 500 increases, the voltage V0 between the terminals of the temperature-sensitive diode 520 gradually decreases as shown in FIG. When the voltage V0 between the terminals of the temperature sensitive diode 520 becomes equal to or lower than the voltage threshold Vth4 at time t1, the output voltage of the comparator 544e becomes low level L. Here, it is assumed that the voltage V1 to V3 between the terminals of the temperature sensitive diodes 521 to 523 is kept larger than the voltage threshold Vth4. The filter circuit 544i illustrated in FIG. 3 removes noise included in the output of the comparator 544e.

  If the inter-terminal voltage V0 of the temperature sensitive diode 520 becomes smaller than the voltage threshold Vth4 during the processing time of the filter circuit 544i, the output voltage of the comparator 544e becomes the low level L. However, since it is during the processing time of the filter circuit 544i, there is no output from the filter circuit 544i, and the output of the OR circuit 544m does not become the high level H but remains at the low level L. Therefore, the logic level of the output of the latch circuit 544n does not become the high level H but remains at the low level L.

  When the temperature of the FET 500 is higher than the threshold and the voltage V0 between the terminals of the temperature sensitive diode 520 is equal to or lower than the voltage threshold Vth4, the logic level of the output of the OR circuit 544m becomes the high level H when the processing time of the filter circuit 544i continues. . In other words, the logical level of the OR circuit 544n switches from the low level L to the high level H at the time t2 after the processing time has elapsed from the time t1, which is the time when the state is switched from V0> Vth4 to V0 ≦ Vth4. . At time t2, the logic level of the latch circuit 544n is also switched to a high level H indicating that an FET temperature abnormality has occurred. The latch circuit 544n maintains the output logic level at the high level H during the hold time. That is, even if the temperature of the FET 500 decreases during the hold time and the voltage V0 between the terminals of the temperature sensitive diode 520 exceeds Vth4, the output logic level of the latch circuit 544n is high during the predetermined hold time. Maintained at H.

  Next, the protection operation of the FET will be described with reference to FIG. The FET protective operations in the semiconductor modules 5 to 7 are all the same. Therefore, the semiconductor module 5 will be described.

  When the FET temperature abnormality is at the high level H, the processing circuit 550 shown in FIG. 4 outputs a drive signal for turning off the FETs 500, 501, 510, and 511. When the processing circuit 550 outputs a drive signal for turning off the FETs 500, 501, 510, and 511, the drive circuits 551i and 551j supply a predetermined voltage to the gates of the FETs 551a to 551d. When a voltage is supplied to the gates of the FETs 551a to 551d shown in FIG. 4, the FETs 551a to 551d are turned on, and the gates of the FETs 500, 501, 510, and 511 are connected to the ground GND. As a result, the gate-source voltage Vgs of the FETs 500, 501, 510, and 511 decreases, and the FETs 500, 501, 510, and 511 are turned off and protected.

Next, the operation of the temperature information output circuit 541 will be described with reference to FIGS.
Inter-terminal voltages V0, V1, V2, V3, which are detection signals of the four temperature sensitive diodes 520 to 523 input from the terminals AH1, AH2, AL1, and AL2, are input to the selectors 541a and 541b. Here, as shown in FIG. 11, it is assumed that the four inter-terminal voltages V0, V1, V2, and V3 are V0>V1>V2>V3> Vth4 in the first stage.

  In this case, V3, which is the lowest inter-terminal voltage among the four inter-terminal voltages V0 to V3, is input to the amplifier circuit 541d. The logic levels output from the selectors 541a to 541c to the amplification factor correction unit 541e are all at the low level L as shown in FIG. This means that the amplification factor correction unit 541e has received a signal indicating that the detection signal V3 is input to the amplification circuit 541d. Therefore, the detection signal V3 is amplified at the amplification factor K3 corresponding to the temperature-sensitive diode 523 that is the output source of the detection signal V3, and the temperature information signal (V3 × K3) is generated. If this amplified temperature information signal is not more than the upper limit output value Vmax and not less than the lower limit output value Vmin, the temperature information signal (V3 × K3) is not particularly limited by the limiter 541f, and the temperature information output terminal OUT Is output from.

  Thereafter, the temperature of the FET 500 starts to rise, and the inter-terminal voltage V0 of the temperature-sensitive diode 520 falls. When V0 falls below V1 at time t4, the input IN1 from the selector 541a to the amplification factor correction unit 541e is switched to the high level H. Next, when V0 falls below V3 at time t5, V0 is input to the amplifier circuit 541d. The input IN3 from the selector 541c to the amplification factor correction unit 541e is also switched to the high level H.

  Then, the amplification factor correction unit 541e recognizes that the detection signal input to the amplification circuit 541d is the detection signal V0 of the temperature sensitive diode 520. Therefore, the detection signal V0 is amplified at the amplification factor K0 corresponding to the temperature sensitive diode 520, and the temperature information signal (V0 × K0) is generated. If this amplified temperature information signal is not more than the upper limit output value Vmax and not less than the lower limit output value Vmin, the temperature information signal (V0 × K0) is not particularly limited by the limiter 541f, and the temperature information output terminal OUT Is output from. In this embodiment, the case where the amplified temperature information signal (V0 × K0) falls below the lower limit output value Vmin after time t6 is illustrated. In such a case, the temperature information signal output from the temperature information output terminal OUT is corrected to the same value as the lower limit output value Vmin in the limiter 541f.

In this way, the temperature information signal generated in the temperature information output circuit 541 is output from the temperature information output terminal OUT to the control circuit 9. The control circuit 9 appropriately controls the operation of the power converter based on the received temperature information signal. That is, for example, as the temperature information, when the temperature of the FET is higher than normal, the control circuit 9 controls the pre-driver 8 to drive the rotating electrical machine 2 while rotating the power, Save power generation of electric machine 2. That is, adjustment is performed so as to suppress the current flowing through the FET and suppress the temperature rise. However, for example, when the temperature of the FET is abnormally high, the above-described protection circuit 55 is activated to turn off the FET.
The control performed by the control circuit 9 in response to the temperature information signal is not particularly limited.

Next, the effect of this embodiment is demonstrated.
The control device 3 that is the power conversion device includes a plurality of temperature-sensitive diodes 520 to 523 that detect temperatures of the plurality of FETs 500, 501, 510, and 511, respectively. Therefore, the temperatures of the plurality of FETs 500, 501, 510, and 511 can be reliably detected and protected.

  Further, the temperature sensitive diodes 520 to 523, the abnormality detection circuit 544 and the protection circuit 55 are integrally provided in the semiconductor module 5. Therefore, the temperature-sensitive diodes 520 to 523 and the abnormality detection circuit 544 are provided in the vicinity of the FETs 500, 501, 510, and 511 that are temperature detection targets. Further, the protection circuit 55 is provided in the vicinity of the temperature sensitive diodes 520 to 523 and the FETs 500, 501, 510, and 511 to be protected. Therefore, the temperatures of the FETs 500, 501, 510, and 511 can be accurately detected. Further, since there is no need to separately provide a temperature sensor for detecting the temperature of the FETs 500, 501, 510, and 511, the number of components can be reduced. Further, errors in detection results due to the influence of wiring resistance and the like can be suppressed. Further, detection results and control signal transmission delays due to the influence of wiring can be suppressed. Therefore, the temperature abnormality of the FETs 500, 501, 510, and 511 can be accurately detected, and the FETs 500, 501, 510, and 511 can be quickly protected.

  Further, the semiconductor module 5 includes a temperature information output circuit 541 and a temperature information output terminal OUT. As a result, the pre-driver 8 can be controlled by the control circuit 9 based on the temperature information of the FETs 500, 501, 510, and 511. Therefore, the on / off drive of the FETs 500, 501, 510, and 511 is controlled according to the temperature conditions of the FETs 500, 501, 510, and 511, and the temperature abnormality of the FETs 500, 501, 510, and 511 is suppressed in advance. Is possible.

  Further, the temperature information output terminal OUT provided in the semiconductor module 5 is one. Therefore, as shown in FIG. 12, the semiconductor module 5 can be easily downsized. That is, when outputting temperature information signals of a plurality of switching elements, a plurality of temperature information output terminals OUT are usually required as in the semiconductor module 95 of the comparative example shown in FIG. In order to output the temperature information signals of the four FETs 500, 501, 510, and 511 as in the present embodiment, usually four temperature information output terminals OUT are provided as shown in FIG. In the present embodiment, the temperature information output circuit 541 is integrally provided in the semiconductor module 5, and the temperature information output terminal OUT can be made one by appropriately generating and outputting the temperature information signal. Yes.

  Thereby, size reduction of the semiconductor module 5 is realizable. This configuration is similarly adopted in the plurality of semiconductor modules 5, 6 and 7. Therefore, it is possible to easily reduce the size of the power conversion device (control device 3).

The control device 3 is integrated with the rotating electrical machine 2 to constitute the control device-integrated rotating electrical machine 1. In such a controller-integrated dynamoelectric machine 1, the arrangement space of the semiconductor modules 5, 6, 7 is particularly limited. This is particularly effective in downsizing.
12 and 13, terminals other than the terminal denoted by reference numeral OUT are signal terminals other than temperature information output terminals, input / output terminals of controlled power, and the like.

  The temperature information output circuit 541 generates a temperature information signal by selecting and using the detection signal having the highest corresponding temperature among the detection signals of the plurality of temperature sensitive diodes 520 to 523. Thereby, even if there is only one temperature information output terminal OUT, appropriate temperature information can be provided to the control circuit 9.

  Further, the temperature information output circuit 541 has an amplifier circuit 541d. Thereby, temperature information can be reliably output to the control circuit 9. That is, even if the voltage between the terminals of the temperature sensitive diodes 520 to 523 is small, they can be amplified and output to the control circuit 9 as an accurate temperature information signal.

  The amplifier circuit 541d is configured to amplify the temperature information signal at an amplification factor appropriately selected from a plurality of amplification factors stored in advance. Thereby, the voltage between the terminals of each of the temperature sensitive diodes 520 to 523 caused by individual differences or the like can be amplified with an appropriate amplification factor. As a result, a more accurate temperature information signal can be generated and output.

  Further, the temperature information output circuit 541 is configured to output the temperature information signal to the control circuit 9 at an output value that is not less than a predetermined lower limit output value Vmin and not more than a predetermined upper limit output value Vmax. Accordingly, it is possible to reliably output the temperature information to the control circuit 9 while preventing the malfunction of the control circuit 9 and the abnormality detection other than the temperature information from being prevented more reliably. That is, for example, when the output of the temperature information signal is too small, it may be difficult to accurately output the temperature information signal to the control circuit 9. In addition, when there is a break in the output wiring, it may be difficult to detect the abnormality. Further, when the output of the temperature information signal is too large, for example, when there is a short circuit of the output wiring, it may be difficult to detect the abnormality. Therefore, it is possible to more reliably control the power conversion device by limiting the output level of the temperature information signal.

  The semiconductor module 5 includes a plurality of upper arm FETs 500 and 510 and lower arm FETs 501 and 511 in the switching circuits 50 and 51 as switching elements. In this way, by integrating more switching elements in one semiconductor module 5, it is possible to reduce the size and cost of the power conversion device. In addition, the above-described configuration can appropriately cope with the temperature rise of the switching element, which is likely to cause a problem in the integrated semiconductor module 5 as described above.

  As described above, according to the present embodiment, it is possible to provide a power conversion device that can accurately and quickly detect the temperature of the switching element and improve the operation efficiency.

(Embodiment 2)
In this embodiment, as shown in FIGS. 14 and 15, the temperature information output circuit 541 generates the temperature information signals by arranging the detection signals V0 to V3 of the plurality of temperature sensitive diodes 520 to 523 with a time difference. is there. A temperature information signal arranged with a time difference is output to the control circuit 9.

  Specifically, as shown in FIG. 14, the detection signals V0 to V3 respectively input from the terminals AH1, AL1, AH2, and AL2 are input to the input terminals IN1 to IN4 of the selector 541h. The selector 541h selects the input detection signals V0 to V3 one by one and outputs them from the output terminal Y to the amplifier circuit 541d.

The selector 541h receives the clock signal CLK from the clock terminal. In synchronization with the clock signal CLK, the detection signals V0 to V3 selected by the selector 541h are switched in order. The cycle of the clock signal CLK can be set to about several milliseconds, for example.
In addition, the output from the output terminal E to the amplification factor correction unit 541e of the selector 541h switches which detection signal is selected in synchronization with the clock signal CLK. Along with this, the amplification factor correction unit 541e sequentially outputs signals of amplification factors corresponding to the detection signals output from the selector 541h to the amplification circuit 541d in time division. That is, signals of amplification factors K0, K1, K2, and K3 are output in order in a time division manner.

As a result, as shown in FIG. 15, the temperature information signal output from the temperature information output circuit 541 to the control circuit 9 is based on the detection signals of the temperature sensitive diodes 520 to 523, in time division, in order. Will be lined up. That is, V0 × K0, V1 × K1, V2 × K2, and V3 × K3 are output from the temperature information output terminal OUT to the control circuit 9 in order in a time division manner as temperature information signals.
Other configurations are the same as those of the first embodiment. Of the reference numerals used in the second and subsequent embodiments, the same reference numerals as those used in the above-described embodiments represent the same components as those in the above-described embodiments unless otherwise indicated.

In the present embodiment, the detection signals V0 to V3 of the plurality of temperature sensitive diodes 520 to 523 can be generated and output as temperature information signals sequentially in a time division manner. Therefore, all temperature information of the plurality of FETs 500, 501, 510, and 511 can be output. Therefore, it is easier to perform control in consideration of the states of the plurality of switching elements. On the other hand, since these temperature information is output in order in a time division manner, a plurality of temperature information signals can be output from one temperature information output terminal OUT.
In addition, the same effects as those of the first embodiment are obtained.

  The present invention is not limited to the above embodiments, and can be applied to various embodiments without departing from the scope of the invention.

3 Control device (power converter)
5, 6, 7 Semiconductor module 500, 501, 510, 511 FET (switching element)
520, 521, 522, 523 Temperature-sensitive diode (temperature-sensitive element)
541 Temperature information output circuit OUT Temperature information output terminal 544 Abnormality detection circuit 55 Protection circuit 8 Pre-driver 9 Control circuit

Claims (9)

A semiconductor module (5, 6, 7) having a plurality of switching elements (500, 501, 510, 511, 600, 601, 610, 611, 700, 701, 710, 711);
A pre-driver (8) for driving the switching element;
A control circuit (9) for controlling the pre-driver,
The semiconductor module includes a plurality of temperature sensing elements (520 to 523, 620 to 623, 720 to 723) that detect temperatures of the plurality of switching elements, respectively.
An abnormality detection circuit (544) for detecting a temperature abnormality of the switching element based on a detection signal of the temperature sensing element;
A protection circuit (55) for turning off the switching element and protecting the switching element from overheating when the abnormality detection circuit detects a temperature abnormality;
A temperature information output circuit (541) for generating and outputting a temperature information signal based on the detection signals of the plurality of temperature sensing elements;
Is provided integrally inside,
The semiconductor module has a temperature information output terminal (OUT) that outputs the temperature information signal to the control circuit.   The power converter according to claim 1, wherein the temperature information output terminal provided in the semiconductor module is one.   The temperature information output circuit is configured to generate the temperature information signal by selecting and using the detection signal having the highest corresponding temperature among the detection signals of the plurality of temperature sensing elements. The power converter according to 1 or 2.   The temperature information output circuit is configured to generate detection signals of a plurality of the temperature sensing elements side by side with a time difference as the temperature information signal, and output the temperature information signal to the control circuit. The power converter according to 1 or 2.   The said temperature information output circuit is a power converter device as described in any one of Claims 1-4 which has an amplifier circuit (541d) which amplifies the said temperature information signal.   The temperature information output circuit is configured to output the temperature information signal to the control circuit at an output value not less than a predetermined lower limit output value (Vmin) and not more than a predetermined upper limit output value (Vmax). The power conversion device according to claim 5, wherein   The power conversion according to claim 5 or 6, wherein the amplifier circuit is configured to amplify the temperature information signal at an amplification factor appropriately selected from a plurality of amplification factors stored in advance. apparatus.   8. The semiconductor module according to claim 1, wherein the semiconductor module has a plurality of upper arm switching elements and lower arm switching elements in the switching circuit (50, 51, 60, 61, 70, 71), respectively. The power converter device as described in any one.   The power conversion device is configured to convert direct current power to alternating current power to drive an alternating current rotating electrical machine (2), convert alternating current power generated by the rotating electrical machine to direct current power, The power converter according to any one of claims 1 to 8, wherein the power converter is configured to charge a battery (BAT) and integrated with the rotating electrical machine.

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