JP2019029979A - Semiconductor device, electronic apparatus, and manufacturing method - Google Patents

Abstract

A semiconductor device including an imaging element is reduced in size.
A translucent substrate, a semiconductor chip, and a component that transmits and receives signals to and from the semiconductor chip are provided. The semiconductor chip and the component are arranged on the same surface of the translucent substrate. The semiconductor chip includes an image sensor. A semiconductor device is manufactured by applying an adhesive to a light-transmitting light-transmitting substrate and fixing the semiconductor chip and a component that transmits and receives signals to and from the semiconductor chip with the adhesive. The present technology can be applied to a semiconductor device including a semiconductor chip including an image sensor.
[Selection] Figure 1

Description

  The present technology relates to a semiconductor device, an electronic device, and a manufacturing method. For example, the present technology relates to a semiconductor device, an electronic device, and a manufacturing method that can be further downsized.

  In recent years, with the miniaturization of digital cameras and the spread of mobile phones having the functions of digital cameras, miniaturization of autofocus drive devices and the like is also desired. Patent Document 1 proposes that the lens holder, the chip, and the substrate be sealed to achieve miniaturization.

Special table 2007-523568 gazette

  Although it is possible to reduce the size of a semiconductor device including an image sensor by reducing the size of an optical system such as a lens, an unfavorable state such as a reduction in light amount and a reduction in image quality is likely to occur. For this reason, it is not preferable to reduce the size of the semiconductor device by reducing the size of the lens or the like. However, as described above, further downsizing of the semiconductor device is desired.

  The present technology has been made in view of such a situation, and enables further miniaturization of a semiconductor device.

  A semiconductor device according to an aspect of the present technology includes a translucent translucent substrate, a semiconductor chip, and a component that transmits and receives signals to and from the semiconductor chip, and the semiconductor chip and the component include the translucent substrate. Are arranged on the same plane.

  An electronic apparatus according to an aspect of the present technology includes a translucent translucent substrate, a semiconductor chip including an imaging element, a component that transmits and receives signals to and from the semiconductor chip, and a lens that collects light on the imaging element. The semiconductor chip and the component are disposed on the same surface of the translucent substrate.

  A manufacturing method according to one aspect of the present technology is a method in which an adhesive is applied to a light-transmitting light-transmitting substrate, and a semiconductor chip and a component that exchanges signals with the semiconductor chip are attached to the light-transmitting substrate with the adhesive. A semiconductor device is manufactured by fixing.

  A semiconductor device according to one aspect of the present technology includes a translucent translucent substrate, a semiconductor chip, and a component that transmits and receives signals to and from the semiconductor chip. The semiconductor chip and the component are the same as the translucent substrate. It is arranged on the surface.

  An electronic apparatus according to an aspect of the present technology is an apparatus including the semiconductor device.

  In the manufacturing method according to one aspect of the present technology, the semiconductor device is manufactured.

  The semiconductor device may be an independent device or an internal block constituting one device.

  According to one aspect of the present technology, the semiconductor device can be further reduced in size.

  Note that the effects described here are not necessarily limited, and may be any of the effects described in the present disclosure.

It is a figure showing composition of one embodiment of a semiconductor device to which this art is applied. It is a figure for demonstrating manufacture of the semiconductor device in 1st Embodiment. It is a figure which shows the structure of the semiconductor device in 2nd Embodiment. It is a figure for demonstrating manufacture of the semiconductor device in 2nd Embodiment. It is a figure which shows the structure of the semiconductor device in 3rd Embodiment. It is a figure for demonstrating manufacture of the semiconductor device in 3rd Embodiment. It is a figure which shows the structure of the semiconductor device in 4th Embodiment. It is a figure for demonstrating manufacture of the semiconductor device in 4th Embodiment. It is a figure which shows the structure of the semiconductor device in 5th Embodiment. It is a figure for demonstrating manufacture of the semiconductor device in 5th Embodiment. It is a figure which shows the structure of the semiconductor device in 6th Embodiment. It is a figure for demonstrating the 1st manufacture of the semiconductor device in 6th Embodiment. It is a figure for demonstrating the 2nd manufacture of the semiconductor device in 6th Embodiment. It is a figure which shows the structure of the semiconductor device in 7th Embodiment. It is a figure for demonstrating the connection with an external device. It is a figure for demonstrating the connection with a lens unit. It is a figure for demonstrating manufacture of the semiconductor device in 7th Embodiment. It is a figure for demonstrating the connection with a laminated lens unit. It is a figure for demonstrating the structure of an example of an electronic device. It is a figure which shows an example of a schematic structure of an endoscopic surgery system. It is a block diagram which shows an example of a function structure of a camera head and CCU. It is a block diagram which shows an example of a schematic structure of a vehicle control system. It is explanatory drawing which shows an example of the installation position of a vehicle exterior information detection part and an imaging part.

  Hereinafter, modes for carrying out the present technology (hereinafter referred to as embodiments) will be described.

<First Embodiment of Semiconductor Device>
FIG. 1 is a sectional view of a semiconductor device 10a according to the first embodiment of the present invention.

  The semiconductor device 10a in the first embodiment includes a semiconductor chip 32, a support base 27 connected to the semiconductor chip 32 via an adhesive layer 28, a through electrode 26 formed in the semiconductor chip 32, and a through electrode 26. The conductive layer 19 is connected to the external terminal 31 by being drawn out from the back surface of the semiconductor chip 32, and the protective layer 20 seals the semiconductor chip 32.

  In the semiconductor chip 32, for example, an active element such as a transistor (not shown), a protective film, or the like is formed on the semiconductor substrate 11 made of silicon or the like. Further, a wiring layer 12 is formed on the semiconductor substrate 11 by laminating a conductive layer such as a wiring (not shown) or a pad electrode 13 and an insulating layer such as an interlayer insulating film covering the conductive layer.

  Further, in this example, the semiconductor chip 32 is a light receiving / emitting element, for example, a light receiving and / or light emitting element (not shown), a light receiving and / or light emitting sensor surface, etc., and wiring corresponding to this sensor surface. A color filter 30, a microlens 29, and the like are formed on the layer 12.

  The semiconductor chip 32 is, for example, a CMOS (Complementary Metal Oxide Semiconductor) image sensor or a CCD (Charge Coupled Device) image sensor.

  The support base 27 is made of a light-transmitting base such as glass. Further, the support base 27 can be configured to be an IRCF (InfraRed Cut Filter). The support base 27 is connected to the surface (main surface) side of the semiconductor chip 32 on which the active elements are formed via an adhesive layer 28 made of resin or the like. 1 has a hollow structure between the support base 27 and the main surface side of the semiconductor chip. As will be described later with reference to FIG. 3, for example, a structure sealed with a light-transmitting resin or the like. It is good.

  In addition, a through electrode 26 that penetrates the semiconductor substrate 11 and is connected to the pad electrode 13 is formed in the semiconductor chip 32. The through electrode 26 has a via hole that opens to the pad electrode 13 from the surface (back surface) opposite to the surface on which the active element of the semiconductor chip 32 is formed with respect to the pad electrode 13 formed in the wiring layer 12. It is formed by covering the inside of the via hole with a conductive layer 19.

  The conductive layer 19 passes from the pad electrode 13 through the inner surface of the through electrode 26, is formed on the back surface of the semiconductor chip 32, and is connected to the external terminal 31 on the back surface side of the semiconductor chip 32. In addition, in order to prevent energization due to contact between the conductive layer 19 and the semiconductor substrate 11, the insulating layer 17 is formed so as to cover the back surface of the semiconductor substrate 11 and the inner surface of the through electrode 26.

  Then, the protective layer 20 is formed on the entire back surface of the semiconductor chip 32 except for the connection portion between the conductive layer 19 and the external terminal 31. The protective layer 20 is formed of, for example, an insulating resin such as a polyimide resin or a solder resist.

  A component 41 is disposed on the side of the semiconductor chip 32. The component 41 is a passive component such as a resistor or a capacitor, an IC (Integrated Circuit) such as an autofocus driver or a camera shake correction driver, or a bare chip (bare die) that is not sealed in an IC package. KGD (Known Good Die) that is guaranteed to be a non-defective product.

  Here, the description will be continued assuming that the component 41 is a component that exchanges signals with the semiconductor chip 32 (processes signals from the semiconductor chip 32 or supplies control signals for controlling the semiconductor chip 32).

  The semiconductor chip 32 and the component 41 are connected via the conductive layer 19.

<Manufacturing of Semiconductor Device in First Embodiment>
The manufacture of the semiconductor device 10a shown in FIG. 1 will be described with reference to FIG.

  In step S11, a translucent substrate 101 is prepared. The translucent substrate 101 is a portion that becomes the support substrate 27 when separated.

  The translucent substrate 101 (supporting substrate 27) has a linear expansion behavior with respect to temperature as much as possible as Si (semiconductor substrate 11 formed of silicon single crystal (semiconductor wafer 103 to be semiconductor substrate 11 (step S13))). Those that show the behavior of For example, the translucent base 101 (support base 27) is made of glass such as quartz glass or borosilicate glass.

  When the light-transmitting substrate 101 prepared in step S11 is bonded to the semiconductor wafer 103 at the wafer level, the light-transmitting substrate 101 and the semiconductor wafer 103 have substantially the same shape.

  Alternatively, the translucent substrate 101 is formed in a rectangular shape or the like, and is disposed in a portion where the pixel region of the semiconductor wafer 103 is formed (the translucent substrate 101 is separated into pieces in advance, It may be configured to be bonded to the semiconductor wafer 103).

  In step S12, the adhesive 102 is applied to a region including the position (region) where the component 41 of the translucent base 101 (support base 27) is disposed (hereinafter referred to as an adhesive region as appropriate). An adhesive layer 28 (a portion to become the adhesive layer 28) is formed. The adhesive layer 28 may be formed by applying the adhesive 102 only to the adhesive region of the translucent substrate 101.

  Alternatively, the adhesive 102 is applied to the entire surface of the translucent substrate 101, and then the adhesive 102 applied to a region other than the region to be the adhesion region is removed, resulting in the translucent substrate. The adhesive layer 28 may be formed by leaving the adhesive 102 only in the adhesive region including the region where the component 41 of the 101 (support base 27) is disposed.

  As the adhesive 102, a liquid adhesive can be used. Further, the adhesive agent 102 may be a transparent resin, and the component 41 and the support substrate 27 may be bonded (fixed) by curing the transparent resin.

  Further, when a transparent adhesive is used as the adhesive 102, a process after bonding the translucent substrate 101 and the semiconductor wafer 103 by selecting a silicon resin, an acrylic resin, an epoxy resin, a dendrimer, or a copolymer thereof. There is no problem in heat resistance / chemical resistance / light resistance even in a reliability test (for example, a treatment for curing by heat or UV irradiation) and an imaging characteristic can be prevented.

  In step S <b> 13, the translucent substrate 101 and the semiconductor wafer 103 are bonded together and the components 41 are arranged. A plurality of pixel regions and the like are formed on a substrate formed of a silicon single crystal, and a semiconductor wafer 103 having a plurality of pixel regions is prepared. The pixel region and the like are formed by a semiconductor element manufacturing process.

  The semiconductor chip 32 is, for example, a CMOS image sensor or a CCD image sensor, and the pixel region is a region having a plurality of conversion elements, a plurality of transistors, and the like that convert incident light into electric charges. A semiconductor wafer 103 in which a plurality of such pixel regions are formed by a semiconductor element manufacturing process is prepared in step S13, and is bonded to the translucent substrate 101.

  An adhesive 102 is applied to the translucent substrate 101 in step S <b> 12, and the translucent substrate 101 and the semiconductor wafer 103 are bonded (fixed) by the adhesive 102. The adhesive 102 is also applied to the region of the translucent substrate 101 where the component 41 is disposed, and the component 41 is fixed to the translucent substrate 101 by the adhesive 102.

  The thickness of the adhesive 102 absorbs variations in the height of the component 41, variations in the height of the semiconductor chip 32 and the component 41, and the components 41 and the semiconductor chip 32 can be arranged side by side.

  In addition, the semiconductor chip 32 (the semiconductor wafer 103 including the semiconductor chip 32) may be bonded to the translucent substrate 101 and then flattened by polishing.

  In step S14, rewiring is formed. This rewiring is a part constituting the conductive layer 19. The conductive layer 19 is formed using, for example, copper (Cu) as a material. For example, resist patterning is performed on the back surface of the semiconductor wafer 103 (a side different from the side where the translucent substrate 101 is disposed). Then, the conductive layer 19 is formed by removing the excess conductor, which is etched using the resist as a mask.

  In step S15, the protective layer 20 is formed. The protective layer 20 is formed of, for example, an insulating resin such as a polyimide resin or a solder resist. By using a photosensitive resin for the protective layer 20, patterning for forming the external terminals 31 and the like in step S16 can be easily formed by a photolithography method.

  In step S16, the external terminals 31 are formed by solder or the like. Further, after the external terminals 31 are formed, the integrated translucent base 101 and semiconductor wafer 103 are cut and separated into individual pieces. As a cutting method, blade dicing, laser dicing, or the like can be applied. Laser dicing is a preferred method because it is excellent in workability of a thinned semiconductor wafer, can reduce the cutting width, and can suppress the occurrence of burrs on the cut surface.

  By such a process, the semiconductor device 10a as shown in FIG. 1 is completed.

  In the semiconductor device 10 a manufactured by such a process, the semiconductor chip 32 and the component 41 are arranged side by side on one surface of the support base 27. Variations in height between the semiconductor chip 32 and the component 41 and variations in height between the components 41 can be absorbed by the adhesive layer 28. Therefore, as described above, the semiconductor chip 32 and the component 41 can be arranged side by side on one surface of the support base 27.

  Further, by arranging the semiconductor chip 32 and the component 41 on one surface of the support base 27, the overall height of the semiconductor device 10a can be reduced. That is, the semiconductor device 10a can be reduced in size.

  Further, by arranging the component 41 at a position adjacent to the semiconductor chip 32, the length of the conductive film 16 connecting the semiconductor chip 32 and the component 41 can be shortened. In other words, the semiconductor chip 32 and the component 41 can be connected at the shortest distance. If the connection distance between the semiconductor chip 32 and the component 41 is long, for example, when a signal from the semiconductor chip 32 is supplied to the component 41, noise is likely to ride, but the effect of such noise is reduced by reducing the connection distance. Can be reduced.

  Further, for example, when a memory is connected to the semiconductor device 10a, the power consumption can be reduced and the speed can be increased by connecting the semiconductor device 10a and the memory (not shown) via the external terminal 31. That is, by providing a large number of external terminals 31 and connecting to the memory with the large number of external terminals 31, it is possible to connect to the memory with multiple electrodes, thereby reducing power consumption and speed.

<Second Embodiment of Semiconductor Device>
Next, the configuration and manufacture of the semiconductor device 10 in the second embodiment will be described.

  FIG. 3 is a diagram illustrating a configuration of the semiconductor device 10b according to the second embodiment. The semiconductor device 10b in the second embodiment shown in FIG. 3 has a structure in which a space between the support base 27 and the main surface side of the semiconductor chip 32 is sealed with a light-transmitting resin or the like. This is different from the semiconductor device 10a in the first embodiment shown in FIG.

  In the example shown in FIG. 2, the semiconductor device 10 b is filled with a material for forming the adhesive layer 28 between the support base 27 and the main surface side of the semiconductor chip 32. The material forming the adhesive layer 28 is a light transmissive resin or the like.

<Manufacturing of Semiconductor Device in Second Embodiment>
The manufacture of the semiconductor device 10b shown in FIG. 3 will be described with reference to FIG. Since the semiconductor device 10b is manufactured in substantially the same process as the semiconductor device 10a in the first embodiment, the description overlapping with the manufacturing process of the semiconductor device 10a described with reference to FIG.

  In step S21, a translucent substrate 101 made of a transparent material such as glass is prepared. In step S <b> 22, the adhesive 202 is applied to the entire surface of the translucent substrate 101. The point that the adhesive 202 is applied to the entire surface of the translucent substrate 101 and proceeds to the next step S23 is different from the manufacturing process of the semiconductor device 10a described with reference to FIG.

  In step S23, the semiconductor wafer 103 is bonded to the translucent substrate 101 having the adhesive 202 applied on the entire surface, and the component 41 is bonded. Thus, the adhesive is applied between the support base 27 and the main surface side of the semiconductor chip 32 by adhering the semiconductor wafer 103 in a state where the adhesive 202 is applied to the entire surface of the translucent base 101. A structure filled with 202 (adhesive layer 28) may be employed.

  In step S24, rewiring is formed. In step S25, the protective layer 20 is formed. In step S26, the external terminals 31 are formed, and the integrated translucent substrate 101 and semiconductor wafer 103 are cut and separated into individual pieces.

  By such a process, the semiconductor device 10b as shown in FIG. 3 is completed.

  In the semiconductor device 10b manufactured by such a process, the semiconductor chip 32 and the component 41 are arranged side by side on one surface of the support base 27, like the semiconductor device 10a (FIG. 1). Variations in height between the semiconductor chip 32 and the component 41 and variations in height between the components 41 can be absorbed by the adhesive layer 28. Therefore, as described above, the semiconductor chip 32 and the component 41 can be arranged side by side on one surface of the support base 27.

  Further, by arranging the semiconductor chip 32 and the component 41 on one surface of the support base 27, the total height of the semiconductor device 10b can be reduced. That is, the semiconductor device 10b can be reduced in size.

  Further, by arranging the component 41 at a position adjacent to the semiconductor chip 32, the length of the conductive film 16 connecting the semiconductor chip 32 and the component 41 can be shortened, so that the influence of noise can be reduced. . Further, for example, when a memory is connected to the semiconductor device 10b, the power consumption and speed can be increased by connecting the semiconductor device 10b and the memory (not shown) via the external terminal 31.

<Third Embodiment of Semiconductor Device>
Next, the configuration and manufacture of the semiconductor device 10 according to the third embodiment will be described.

  FIG. 5 is a diagram illustrating a configuration of a semiconductor device 10c according to the third embodiment. The semiconductor device 10c in the third embodiment shown in FIG. 5 has a structure in which the space between the support base 27 and the main surface side of the semiconductor chip 32 is sealed with a light-transmitting resin or the like. Unlike the semiconductor device 10a in the first embodiment shown in FIG. 1, the configuration is the same as that of the semiconductor device 10b in the second embodiment shown in FIG.

  The semiconductor device 10c has a structure in which a counterbore is inserted into the support base 27 in order to absorb the height of the component 41. The semiconductor device 10c in the first embodiment and the second embodiment It differs from the semiconductor device 10b in the form.

  Referring to FIG. 5, a counterbore 27c is formed on the support base 27 of the semiconductor device 10c. The counterbore 27c is formed by forming a part of the support substrate 27 to be thin. By forming the counterbore 27c on the support base 27, even if the component 41 having a thickness (height) than the semiconductor chip 32 is arranged in the counterbore 27c, the height is absorbed by the counterbore 27c. As in the first and second embodiments, the semiconductor chip 32 and the component 41 can be arranged side by side on one surface of the support base 27.

  Moreover, even if the high-part 41 is disposed, the height of the semiconductor device 10c can be reduced without increasing the height.

<Manufacturing of Semiconductor Device in Third Embodiment>
Manufacturing of the semiconductor device 10c shown in FIG. 5 will be described with reference to FIG. Since the semiconductor device 10c is manufactured in substantially the same process as the semiconductor device 10b in the second embodiment, the description overlapping with the manufacturing process of the semiconductor device 10b described with reference to FIG. 4 is omitted as appropriate.

  In step S31, a translucent substrate 301 made of a transparent material such as glass is prepared. In this translucent base 301, a part that becomes the counterbore 27c of the support base 27 of the semiconductor device 10c when already separated is already formed.

  In step S <b> 32, the adhesive 302 is applied to the entire surface of the translucent substrate 301. By applying the adhesive 302 to the entire surface of the translucent substrate 301, the portion of the counterbore 27c is also filled with the adhesive 302.

  In step S33, the semiconductor wafer 103 is bonded to the translucent substrate 301 on which the adhesive 302 is also applied to the counterbore 27c, and the component 41 is bonded. Since the process after process S33 is the same process as the process after process S23 shown in FIG. 4, description is abbreviate | omitted here.

  By such a process, the semiconductor device 10c as shown in FIG. 5 is completed.

  In the semiconductor device 10c manufactured by such a process, as in the semiconductor device 10a (FIG. 1), the semiconductor chip 32 and the component 41 are arranged side by side on one surface of the support base 27, and the height of the semiconductor chip 32 and the component 41 is increased. The semiconductor device 10c can be reduced in size because the variation in height and the variation in height between the components 41 are absorbed by the adhesive layer 28.

  Further, in the semiconductor device 10c, the counterbore 27c is formed, so that the semiconductor chip 32 and the component 41 are arranged side by side on one surface of the support base 27 even when the tall component 41 is disposed. Therefore, the overall height of the semiconductor device 10c can be reduced. That is, the semiconductor device 10c can be reduced in size.

  Further, by arranging the component 41 at a position adjacent to the semiconductor chip 32, the length of the conductive film 16 connecting the semiconductor chip 32 and the component 41 can be shortened, so that the influence of noise can be reduced. . Further, for example, when a memory is connected to the semiconductor device 10c, the power consumption and speed can be increased by connecting the semiconductor device 10c and the memory (not shown) via the external terminal 31.

<Fourth Embodiment of Semiconductor Device>
Next, the configuration and manufacture of the semiconductor device 10 according to the fourth embodiment will be described.

  FIG. 7 is a diagram illustrating a configuration of a semiconductor device 10d according to the fourth embodiment. The semiconductor device 10d in the fourth embodiment shown in FIG. 7 is similar to the semiconductor device 10a in the first embodiment shown in FIG. 1 between the support base 27 and the main surface side of the semiconductor chip 32. Although it is hollow, its size is different.

  In other words, the semiconductor device 10 d has a hollow space between the support base 27 and the main surface side of the semiconductor chip 32, in other words, between the support base 27 and the main surface side of the semiconductor chip 32. Is different from the semiconductor device 10a in the first embodiment in that a counterbore is provided in the support base 27 in order to widen (provide a gap).

  Referring to FIG. 7, a counterbore 27d is formed in a region of the support base 27 of the semiconductor device 10d that faces the semiconductor chip 32 (pixel region thereof). The counterbore 27d is formed by forming a part of the support substrate 27 to be thin.

  The counterbore 27d is formed on the support base 27, and is bonded to the counterbore 27d so that the pixel region of the semiconductor chip 32 is located, thereby providing a gap between the support base 27 and the main surface side of the semiconductor chip 32. be able to. Further, as in the first to third embodiments, the semiconductor chip 32 and the component 41 can be arranged side by side on one surface of the support base 27.

<Manufacturing of Semiconductor Device in Fourth Embodiment>
The manufacture of the semiconductor device 10d shown in FIG. 7 will be described with reference to FIG. Since the semiconductor device 10d is manufactured in substantially the same process as the semiconductor device 10c in the third embodiment, the description overlapping with the manufacturing process of the semiconductor device 10c described with reference to FIG. 6 is omitted as appropriate.

  In step S41, a translucent substrate 401 formed of a transparent material such as glass is prepared. In the translucent base 401, a part that becomes a counterbore 27d of the support base 27 of the semiconductor device 10d when already separated is already formed.

  In step S <b> 42, the adhesive 402 is applied to a region other than the counterbore 27 d of the translucent substrate 401. In other words, as in step S12 (FIG. 2), the adhesive 402 is applied only to a region (bonding region) including a position (region) where the component 41 of the translucent substrate 101 (supporting substrate 27) is disposed. It is assumed that it is in a state.

  In step S43, the semiconductor wafer 103 is bonded to the translucent substrate 401 in which the adhesive 402 is applied to portions other than the counterbore 27d, and the component 41 is bonded. Since the process after process S43 is the same process as the process after process S13 shown in FIG. 1, description is abbreviate | omitted here.

  By such a process, the semiconductor device 10d as shown in FIG. 7 is completed.

  Similar to the semiconductor device 10a (FIG. 1), the semiconductor device 10d manufactured by such a process has the semiconductor chip 32 and the component 41 arranged side by side on one surface of the support base 27, and the height of the semiconductor chip 32 and the component 41 is increased. Variations in height and variations in height between components 41 are absorbed by the adhesive layer 28, so that the overall height of the semiconductor device 10d can be reduced. That is, the semiconductor device 10d can be reduced in size.

  Further, by arranging the component 41 at a position adjacent to the semiconductor chip 32, the length of the conductive film 16 connecting the semiconductor chip 32 and the component 41 can be shortened, so that the influence of noise can be reduced. . Further, for example, when a memory is connected to the semiconductor device 10d, by connecting the semiconductor device 10d and the memory (not shown) via the external terminal 31, it is possible to reduce power consumption and increase the speed.

  In the fourth embodiment, an example in which a hollow is provided between the support base 27 and the main surface side of the semiconductor chip 32 by forming the counterbore 27d on the support base 27 has been described. When a hollow is provided between the support base 27 and the main surface side of the semiconductor chip 32, the configuration shown in FIG. 1 may be used, and the hollow is formed larger by adjusting the thickness of the adhesive layer 28. It can also be made.

<Fifth Embodiment of Semiconductor Device>
Next, the configuration and manufacture of the semiconductor device 10 according to the fifth embodiment will be described.

  FIG. 9 is a diagram illustrating a configuration of a semiconductor device 10e according to the fifth embodiment. The semiconductor device 10e in the fifth embodiment shown in FIG. 9 has a configuration in which the semiconductor device 10c in the third embodiment and the semiconductor device 10d in the fourth embodiment are combined.

  9, the support base 27 of the semiconductor device 10e has a counterbore 27c formed at a position where the component 41 is disposed, and a counterbore 27d at a position where the semiconductor chip 32 (pixel region thereof) is disposed. Is formed.

  By having such a configuration, as with the semiconductor device 10c of the third embodiment, the height of the semiconductor device 10e is not increased and the height of the semiconductor device 10e is reduced even when the tall component 41 is disposed. can do. Further, like the semiconductor device 10 d of the fourth embodiment, a structure in which a hollow is provided between the support base 27 and the main surface side of the semiconductor chip 32 can be employed.

<Manufacturing of Semiconductor Device in Fifth Embodiment>
Manufacturing of the semiconductor device 10e shown in FIG. 9 will be described with reference to FIG.

  In step S51, a translucent substrate 501 formed of a transparent material such as glass is prepared. The translucent substrate 501 has already been formed with portions corresponding to the counterbore 27c and the counterbore 27d of the support base 27 of the semiconductor device 10e when separated. Since the translucent substrate 501 on which the counterbore 27c and the counterbore 27d are formed is prepared, it can be performed in the same manner as the manufacturing process of the semiconductor device 10d described with reference to FIG. The description is omitted here.

  In this way, the semiconductor device 10e as shown in FIG. 9 is completed.

  In the semiconductor device 10e manufactured by such a process, as in the semiconductor device 10a (FIG. 1), the semiconductor chip 32 and the component 41 are arranged side by side on one surface of the support base 27, and the height of the semiconductor chip 32 and the component 41 is increased. The variation in height and the variation in the height of the components 41 are absorbed by the adhesive layer 28, so that the overall height of the semiconductor device 10e can be reduced. That is, the semiconductor device 10e can be reduced in size.

  Further, by arranging the component 41 at a position adjacent to the semiconductor chip 32, the length of the conductive film 16 connecting the semiconductor chip 32 and the component 41 can be shortened, so that the influence of noise can be reduced. . Further, for example, when a memory is connected to the semiconductor device 10e, the power consumption and speed can be increased by connecting the semiconductor device 10e and the memory (not shown) via the external terminal 31.

<Sixth Embodiment of Semiconductor Device>
Next, the configuration and manufacture of the semiconductor device 10 according to the sixth embodiment will be described.

  FIG. 11 is a diagram illustrating a configuration of a semiconductor device 10f according to the sixth embodiment. The semiconductor device 10f in the sixth embodiment shown in FIG. 11 is different from the semiconductor device 10a in the first embodiment shown in FIG. 1 in that a wiring layer 12f is added.

  In the structure of the semiconductor device 10f, the pad electrode 13 and the through electrode 26 are connected, the through electrode 26 and the conductive layer 19 are connected, and the conductive layer 19 and the component 41-1 (in FIG. 11, of the two components, the semiconductor The side closer to the chip 32 will be described as a component 41-1). Furthermore, the component 41-1 and the wiring layer 12f are connected, and the wiring layer 12f and the component 41-2 are connected. Thus, the component 41-1 and the component 41-2 are connected by the wiring layer 12f.

  Further, the wiring layer 12f is formed on the back side of the support base 27 (the side where the component 41 is disposed). The component 41-1 is connected to the conductive layer 19 on the lower surface and connected to the wiring layer 12f on the upper surface.

  As described above, the wiring layers may be provided on the lower surface and the upper surface of the component 41, respectively. The semiconductor device 10f according to the sixth embodiment is an example of an embodiment in which the degree of freedom in wiring is increased.

<First Manufacturing of Semiconductor Device in Sixth Embodiment>
A first manufacture of the semiconductor device 10f shown in FIG. 11 will be described with reference to FIG. Since the semiconductor device 10f is manufactured in substantially the same process as the semiconductor device 10a in the first embodiment, the description overlapping with the manufacturing process of the semiconductor device 10a described with reference to FIG.

  In step S61, a translucent substrate 601 formed of a transparent material such as glass is prepared. In the translucent substrate 601, a portion that becomes the wiring layer 12f of the semiconductor device 10f when already separated is already formed.

  In step S62, the adhesive 602 is applied only to a region (adhesion region) including a position (region) where the component 41 of the translucent substrate 601 is disposed. Since the wiring layer 12f is also formed in the adhesion region, the adhesive 602 is also applied onto the wiring layer 12f.

  In step S63, the semiconductor wafer 103 is bonded to the translucent substrate 601 coated with the adhesive 602, and the component 41 is bonded. The component 41 (component 41-1 and component 41-2) is fixed while being connected to the wiring layer 12f. As the adhesive 602, an adhesive that electrically connects the component 41 and the wiring layer 12f is used.

  The steps after step S64 are basically the same as the steps after step S14 shown in FIG.

  Through such a process, the semiconductor device 10f as shown in FIG. 11 is completed.

<Second Manufacturing of Semiconductor Device in Sixth Embodiment>
A second manufacture of the semiconductor device 10f shown in FIG. 11 will be described with reference to FIG.

  In step S71, a translucent substrate 701 made of a transparent material such as glass is prepared. In the translucent substrate 701, a part that becomes the wiring layer 12f of the semiconductor device 10f when already separated is already formed. Furthermore, a component 41 is mounted on the formed wiring layer 12f.

  In step S72, the adhesive 702 is applied only to a region (adhesion region) including a position (region) where the component 41 of the translucent substrate 601 is disposed. Since the wiring layer 12 f is already formed in the adhesion region and the component 41 is mounted, the adhesive 702 is also applied to the region of the wiring layer 12 f that is not in contact with the component 41.

  The steps after step S73 are basically the same as the steps after step S63 shown in FIG.

  Through such a process, the semiconductor device 10f as shown in FIG. 11 is completed.

  The semiconductor device 10f manufactured by such a process is similar to the semiconductor device 10a (FIG. 1). Since the semiconductor chip 32 and the component 41 are arranged side by side on one surface of the support base 27, the total height of the semiconductor device 10f is increased. Can be lowered. That is, the semiconductor device 10f can be reduced in size.

  Further, by arranging the component 41 at a position adjacent to the semiconductor chip 32, the length of the conductive film 16 connecting the semiconductor chip 32 and the component 41 can be shortened, so that the influence of noise can be reduced. . In addition, according to the semiconductor device 10f, a configuration in which the degree of freedom of wiring is increased can be obtained. Further, for example, when a memory is connected to the semiconductor device 10f, the power consumption can be reduced and the speed can be increased by connecting the semiconductor device 10f and the memory (not shown) via the external terminal 31.

<Seventh Embodiment of Semiconductor Device>
Next, the configuration and manufacture of the semiconductor device 10 according to the seventh embodiment will be described.

  FIG. 14 is a diagram illustrating a configuration of a semiconductor device 10g according to the seventh embodiment. The semiconductor device 10g in the seventh embodiment has the same basic configuration as that of the semiconductor device 10f in the sixth embodiment shown in FIG. 11, but the wiring layer 12f (FIG. 14) is connected to the outside. However, the difference is that the wiring layer 12g) is used.

  Referring to FIG. 14, the semiconductor device 10g has a structure in which a part of the wiring layer 12g is exposed. In other words, the portion of the wiring layer 12g where the component 41-2 is arranged in the semiconductor device 10f in the sixth embodiment can be used as an electrode for connection with an external device.

  Further, the semiconductor device 10g shown in FIG. 14 has a structure that can be connected to an external device through the wiring layer 12g, and thus has no external terminal 31. Even in the case where the external terminal 31 is not provided, it is possible to have a configuration that can be connected to an external device other than the wiring layer 12g.

  For example, the conductive layer 19 can be configured to be connected to an external device (a terminal for connection with) outside the pixel region. The semiconductor device 10g illustrated in FIG. 14 illustrates a configuration in which the external terminal 31 is not provided, but an example in which the conductive layer 19 where the external terminal 31 is provided is formed.

  The conductive layer 19 is connected to a terminal (not shown) provided outside the pixel region, and the terminal can be configured to be connected to an external device.

  Furthermore, when not configured to be connected to an external device through the conductive layer 19, the semiconductor device 10g may be configured not to include the conductive layer 19.

  In the first to sixth embodiments described above, the configuration including the external terminal 31 has been described as an example. However, the semiconductor devices 10a to 10f in the first to sixth embodiments are replaced with the external terminal 31. The semiconductor device 10 that does not include the external terminal 31 is also within the scope of the present technology.

  According to the present technology, by providing the external terminal 31, it is possible to connect to an external device (for example, a memory) on the back surface side of the semiconductor device 10, or to connect the external device via the conductive layer 19. It can be configured to be connected, or can be configured to be connected to an external device through the wiring layer 12d.

  In the seventh embodiment, the description will be continued with an example in which the external terminal 31 is not provided. However, similarly to the first to sixth embodiments described above, the external terminal 31 may be configured. It is.

  The semiconductor device 10 includes a configuration including the external terminal 31 and the conductive layer 19, a configuration including the conductive layer 19 but not including the external terminal 31, or a configuration including the external terminal 31 and the conductive layer 19 depending on how the external device is connected. It can be set as the structure which is not provided.

  The semiconductor device 10g according to the seventh embodiment has a region connected to an external device in a part of the wiring layer 12g. However, such a configuration is not supported by the counterbore as shown in FIG. It can be applied to the substrate 27. Further, as in the semiconductor device 10c shown in FIG. 5, the wiring layer 12g is provided on the support substrate 27 on which the counterbore is formed, and a part of the wiring layer 12g has a region connected to the external device. It is also possible to do.

  FIG. 15 shows an example in which a wiring layer 12g of the semiconductor device 10g and an FPC (Flexible Print Board) 801 are connected. The FPC 801 is provided with a connector 802. The connector 802 is connected to an external device (not shown) such as a main board of a mobile phone.

  When the wiring layer 12g and the FPC 801 are connected, an ACF (Anisotropic Conductive Film) terminal 803 is formed at a portion where the wiring layer 12g and the FPC 801 are connected. The wiring layer 12g and the FPC 801 may be connected using a terminal other than the ACF terminal 803.

  As shown in FIG. 15, the semiconductor device 10g has a structure in which a part of the wiring layer 12g is exposed (structure in which a lead wiring is provided), and the exposed wiring layer 12g and the FPC 801 are connected. be able to. With such a configuration, the semiconductor device 10g can be easily connected to the FPC 801.

  In addition, since the semiconductor device 10g can be easily connected to the FPC 801, for example, when the semiconductor device 10g is installed on a main board, the semiconductor device 10g can be installed without being restricted by its installation position. In other words, the degree of freedom of the installation position of the semiconductor device 10g with respect to the main board can be increased, and the semiconductor device 10g can be installed on the main board even if positioning accuracy when installing on the main board is not high. It becomes.

  FIG. 16 is a diagram illustrating a mounting example when a lens unit having an auto-focus (AF) function is mounted on the semiconductor device 10g. The lens unit 851 includes an actuator 861, a lens barrel 862, and a lens 863.

  A lens 863-1, a lens 863-2, and a lens 863-3 are incorporated inside the lens barrel 862, and the lens barrel 862 is configured to hold these lenses 863-1 to 863-3. The lens barrel 862 is included in the actuator 861, and the semiconductor device 10 g is attached to the lower part of the actuator 861.

  When the lens barrel 862 is configured to move in the vertical direction in the drawing so that autofocusing can be performed, for example, a coil is provided on the side surface of the lens barrel 862 (the lens carrier to which the lens barrel 862 is attached). It is done. In addition, a magnet is provided inside the actuator 861 at a position facing the coil. The magnet is provided with a yoke, and the coil, magnet, and yoke constitute a voice coil motor.

  When a current is passed through the coil, a force is generated in the vertical direction in the figure. With this generated force, the lens barrel 862 moves upward or downward. By moving the lens barrel 862, the distance between the lenses 863-1 to 863-3 held by the lens barrel 862 and the semiconductor device 10a (image sensor included therein) changes. With such a mechanism, autofocus can be realized.

  It should be noted that it is possible to configure so that auto-focusing is realized by other mechanisms, and the configuration depends on how to realize the auto-focusing.

  When the lens barrel 862 is configured to move by passing a current through the coil, the lens barrel 862 includes an AF terminal 871 for supplying electricity to the coil. As shown in FIG. 16, an AF terminal 871 is formed in a part of the lens unit 851, and the AF terminal 871 and a part of the wiring layer 12g of the semiconductor device 10g are connected by solder 881.

  The semiconductor device 10g and the lens unit 851 are connected by the wiring layer 12g, the solder 881, and the AF terminal 871, and the lens unit 851 (internal) is connected from the semiconductor device 10g via the wiring layer 12g, the solder 881, and the AF terminal 871. The coil (not shown) can be supplied with electric power.

  As shown in FIG. 16, the legs 852 of the lens unit 851 can be arranged in a region where the through electrode 26 is arranged or a region where the component 41 is arranged. As shown in FIG. 16, the component 41 can be arranged on both sides of the semiconductor chip 32. By arranging the component 41 on both sides, the legs 852 of the lens unit 851 can be arranged in the region.

  Therefore, it is not necessary to provide an area for arranging the foot 852, and the area where the component 41 is arranged can be used effectively. Also from this point, even when the lens unit 851 is attached, the imaging device 10g can be downsized.

<Manufacturing of Semiconductor Device in Seventh Embodiment>
The manufacture of the semiconductor device 10g shown in FIG. 14 will be described with reference to FIG.

  In step S81, a translucent substrate 601 formed of a transparent material such as glass is prepared. In this translucent substrate 601, a portion that becomes the wiring layer 12g of the semiconductor device 10f when already separated is already formed. This step S81 is the same as step S61 (FIG. 12).

  In step S82, the adhesive 902 is applied only to a region (adhesion region) including a position (region) where the component 41 of the translucent substrate 601 is disposed. Since the wiring layer 12g is also formed in the adhesion region, the adhesive 902 is also applied onto the wiring layer 12g. However, in step S82, a part of the wiring layer 12g, in other words, an area connected to the ACF terminal 803 (FIG. 15) and the solder 881 for connecting to the AF terminal 871, Not applied.

  The steps after step S83 are basically the same as the steps after step S63 shown in FIG.

  Through such steps, the semiconductor device 10g as shown in FIG. 14 is completed.

  The semiconductor device 10g manufactured by such a process is similar to the semiconductor device 10a (FIG. 1). Since the semiconductor chip 32 and the component 41 are arranged side by side on one surface of the support base 27, the total height of the semiconductor device 10g is increased. Can be lowered. That is, the semiconductor device 10g can be reduced in size.

  Further, by forming a part of the wiring layer 12g in an exposed state, a region (terminal or the like) for connection with an external device can be formed. Even when such a region is provided, the overall height of the semiconductor device 10g is not hindered from being lowered, and the semiconductor device 10g can be reduced in size.

<Combination with laminated lens structure>
The semiconductor devices 10a to 10g in the first to seventh embodiments described above can be combined with a laminated lens structure.

  FIG. 18 is a cross-sectional view showing a configuration of an example of a camera module 1000 in which the laminated lens structure 1011 and the semiconductor device 10a are combined.

  The camera module 1000 includes a laminated lens structure 1011 in which a plurality of lens-attached substrates 1041a to 1041e are laminated, and a semiconductor device 10a. The laminated lens structure 1011 includes a plurality of optical units 1013. A one-dot chain line 1084 represents the optical axis of each optical unit 1013.

  The semiconductor device 10a is disposed below the laminated lens structure 1011. In the camera module 1000, light that has entered the camera module 1000 from above passes through the laminated lens structure 1011 and is received by the semiconductor device 10 a disposed below the laminated lens structure 1011.

  The laminated lens structure 1011 includes five laminated lenses 1041a to 1041e. In the case where the five lens-attached substrates 1041a to 1041e are not particularly distinguished, they are simply described as the lens-provided substrate 1041.

  The cross-sectional shape of the through-hole 1083 of each lens-attached substrate 1041 constituting the laminated lens structure 1011 is a so-called bottom depression shape in which the opening width decreases toward the lower side (side on which the semiconductor device 10a is disposed). Have

  An aperture plate 1051 is disposed on the laminated lens structure 1011. The diaphragm plate 1051 includes, for example, a layer formed of a material having a light absorbing property or a light shielding property. The aperture plate 1051 is provided with an opening 1052.

  As described in the first embodiment, the semiconductor device 10a is, for example, a front side illumination type or a back side illumination type CMOS image sensor.

  The laminated lens structure 1011, the semiconductor device 10 a, the diaphragm plate 1051, and the like are housed in a lens barrel 1074.

  A structural material 1073 is disposed on the upper side of the semiconductor device 10a. The laminated lens structure 1011 and the semiconductor device 10a are fixed via the structural material 1073. The structural material 1073 is, for example, an epoxy resin.

  In the present embodiment, the laminated lens structure 1011 includes five laminated substrates 1041a to 1041e with lenses, but the number of laminated substrates 1041 with lenses is not particularly limited as long as it is two or more.

  Each lens-attached substrate 1041 constituting the laminated lens structure 1011 has a structure in which a lens resin portion 1082 is added to the carrier substrate 1081. The carrier substrate 1081 has a through hole 1083, and a lens resin portion 1082 is formed inside the through hole 1083. The lens resin portion 1082 includes a lens, and also includes a portion that extends to the carrier substrate 1081 and supports the lens, and represents a portion integrated by a material constituting the lens.

  In FIG. 18, the semiconductor device 10 a has been described as an example. However, the camera module 1000 may be configured by combining any one of the semiconductor devices 10 b to 10 g with the laminated lens structure 1011.

<Electronic equipment>
The present technology is not limited to application to a semiconductor device, but is an image pickup device such as a digital still camera or a video camera, a portable terminal device having an image pickup function such as a mobile phone, or a copy using an image pickup device for an image reading unit. The present invention can be applied to all electronic devices that use an imaging device for an image capturing unit (photoelectric conversion unit) such as a computer. In some cases, a module-like form mounted on an electronic device, that is, a camera module is used as an imaging device.

  FIG. 19 is a block diagram illustrating a configuration example of an imaging apparatus that is an example of the electronic apparatus of the present disclosure. As illustrated in FIG. 7, an imaging apparatus 2000 of the present disclosure includes an optical system including a lens group 2001 and the like, an imaging apparatus 2002, a DSP circuit 2003 that is a camera signal processing unit, a frame memory 2004, a display apparatus 2005, a recording apparatus 2006, An operation system 2007, a power supply system 2008, and the like are included.

  The DSP circuit 2003, the frame memory 2004, the display device 2005, the recording device 2006, the operation system 2007, and the power supply system 2008 are connected to each other via a bus line 2009. The CPU 310 controls each unit in the imaging device 2000.

  The lens group 2001 captures incident light (image light) from a subject and forms an image on the imaging surface of the imaging device 2002. The imaging device 2002 converts the amount of incident light imaged on the imaging surface by the lens group 2001 into an electrical signal for each pixel and outputs the electrical signal as a pixel signal. As the imaging device 2002, the semiconductor device 10 according to the above-described embodiment can be used.

  The display device 2005 includes a panel type display device such as a liquid crystal display device or an organic EL (electroluminescence) display device, and displays a moving image or a still image captured by the imaging device 2002. The recording device 2006 records the moving image or still image captured by the imaging device 2002 on a recording medium such as a video tape or a DVD (Digital Versatile Disk).

  The operation system 2007 issues operation commands for various functions of the imaging apparatus under operation by the user. The power supply system 2008 appropriately supplies various power supplies serving as operation power supplies for the DSP circuit 2003, the frame memory 2004, the display device 2005, the recording device 2006, and the operation system 2007 to these supply targets.

  Such an imaging apparatus 2000 is applied to a video camera, a digital still camera, and a camera module for a mobile device such as a mobile phone. In this imaging apparatus 2000, the semiconductor device 10 according to the above-described embodiment can be used as the imaging apparatus 2002.

<Application example to endoscopic surgery system>
The technology according to the present disclosure (present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

  FIG. 20 is a diagram illustrating an example of a schematic configuration of an endoscopic surgery system to which the technology (present technology) according to the present disclosure can be applied.

  FIG. 20 shows a state where an operator (doctor) 11131 is performing an operation on a patient 11132 on a patient bed 11133 using an endoscopic operation system 11000. As shown in the figure, an endoscopic surgery system 11000 includes an endoscope 11100, other surgical instruments 11110 such as an insufflation tube 11111 and an energy treatment instrument 11112, and a support arm device 11120 that supports the endoscope 11100. And a cart 11200 on which various devices for endoscopic surgery are mounted.

  The endoscope 11100 includes a lens barrel 11101 in which a region having a predetermined length from the distal end is inserted into the body cavity of the patient 11132, and a camera head 11102 connected to the proximal end of the lens barrel 11101. In the illustrated example, an endoscope 11100 configured as a so-called rigid mirror having a rigid lens barrel 11101 is illustrated, but the endoscope 11100 may be configured as a so-called flexible mirror having a flexible lens barrel. Good.

  An opening into which the objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101. Irradiation is performed toward the observation target in the body cavity of the patient 11132 through the lens. Note that the endoscope 11100 may be a direct endoscope, a perspective mirror, or a side endoscope.

  An optical system and an imaging device are provided inside the camera head 11102, and reflected light (observation light) from the observation target is condensed on the imaging device by the optical system. Observation light is photoelectrically converted by the imaging element, and an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image is generated. The image signal is transmitted to a camera control unit (CCU) 11201 as RAW data.

  The CCU 11201 is configured by a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and the like, and comprehensively controls operations of the endoscope 11100 and the display device 11202. Further, the CCU 11201 receives an image signal from the camera head 11102 and performs various kinds of image processing for displaying an image based on the image signal, such as development processing (demosaic processing), for example.

  The display device 11202 displays an image based on an image signal subjected to image processing by the CCU 11201 under the control of the CCU 11201.

  The light source device 11203 is composed of a light source such as an LED (light emitting diode), for example, and supplies irradiation light to the endoscope 11100 when photographing a surgical site or the like.

  The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 11100.

  The treatment instrument control device 11205 controls driving of the energy treatment instrument 11112 for tissue ablation, incision, blood vessel sealing, or the like. In order to inflate the body cavity of the patient 11132 for the purpose of securing the field of view by the endoscope 11100 and securing the operator's work space, the pneumoperitoneum device 11206 passes gas into the body cavity via the pneumoperitoneum tube 11111. Send in. The recorder 11207 is an apparatus capable of recording various types of information related to surgery. The printer 11208 is a device that can print various types of information related to surgery in various formats such as text, images, or graphs.

  Note that the light source device 11203 that supplies the irradiation light when imaging the surgical site to the endoscope 11100 can be configured by a white light source configured by, for example, an LED, a laser light source, or a combination thereof. When a white light source is configured by a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy. Therefore, the light source device 11203 adjusts the white balance of the captured image. It can be carried out. In this case, laser light from each of the RGB laser light sources is irradiated on the observation target in a time-sharing manner, and the drive of the image sensor of the camera head 11102 is controlled in synchronization with the irradiation timing, thereby corresponding to each RGB. It is also possible to take the images that have been taken in time division. According to this method, a color image can be obtained without providing a color filter in the image sensor.

  Further, the driving of the light source device 11203 may be controlled so as to change the intensity of light to be output every predetermined time. Synchronously with the timing of changing the intensity of the light, the drive of the image sensor of the camera head 11102 is controlled to acquire an image in a time-sharing manner, and the image is synthesized, so that high dynamic without so-called blackout and overexposure A range image can be generated.

  The light source device 11203 may be configured to be able to supply light of a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in body tissue, the surface of the mucous membrane is irradiated by irradiating light in a narrow band compared to irradiation light (ie, white light) during normal observation. A so-called narrow band imaging is performed in which a predetermined tissue such as a blood vessel is imaged with high contrast. Alternatively, in special light observation, fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiating excitation light. In fluorescence observation, the body tissue is irradiated with excitation light to observe fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally administered to the body tissue and applied to the body tissue. It is possible to obtain a fluorescence image by irradiating excitation light corresponding to the fluorescence wavelength of the reagent. The light source device 11203 can be configured to be able to supply narrowband light and / or excitation light corresponding to such special light observation.

  FIG. 21 is a block diagram illustrating an example of functional configurations of the camera head 11102 and the CCU 11201 illustrated in FIG.

  The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so that they can communicate with each other.

  The lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101. Observation light taken from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.

  One (so-called single plate type) image sensor may be included in the imaging unit 11402, or a plurality (so-called multi-plate type) may be used. In the case where the imaging unit 11402 is configured as a multi-plate type, for example, image signals corresponding to RGB may be generated by each imaging element, and a color image may be obtained by combining them. Alternatively, the imaging unit 11402 may be configured to include a pair of imaging elements for acquiring right-eye and left-eye image signals corresponding to 3D (dimensional) display. By performing the 3D display, the operator 11131 can more accurately grasp the depth of the living tissue in the surgical site. Note that in the case where the imaging unit 11402 is configured as a multi-plate type, a plurality of lens units 11401 can be provided corresponding to each imaging element.

  Further, the imaging unit 11402 is not necessarily provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.

  The drive unit 11403 includes an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. Thereby, the magnification and the focus of the image captured by the imaging unit 11402 can be adjusted as appropriate.

  The communication unit 11404 is configured by a communication device for transmitting / receiving various types of information to / from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

  In addition, the communication unit 11404 receives a control signal for controlling driving of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405. The control signal includes, for example, information for designating the frame rate of the captured image, information for designating the exposure value at the time of imaging, and / or information for designating the magnification and focus of the captured image. Contains information about the condition.

  Note that the imaging conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. Good. In the latter case, the so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function are mounted on the endoscope 11100.

  The camera head control unit 11405 controls driving of the camera head 11102 based on a control signal from the CCU 11201 received via the communication unit 11404.

  The communication unit 11411 is configured by a communication device for transmitting and receiving various types of information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

  The communication unit 11411 transmits a control signal for controlling driving of the camera head 11102 to the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

  The image processing unit 11412 performs various types of image processing on an image signal that is RAW data transmitted from the camera head 11102.

  The control unit 11413 performs various types of control related to imaging of the surgical site or the like by the endoscope 11100 and display of a captured image obtained by imaging of the surgical site or the like. For example, the control unit 11413 generates a control signal for controlling driving of the camera head 11102.

  In addition, the control unit 11413 causes the display device 11202 to display a captured image in which an operation part or the like is reflected based on the image signal subjected to image processing by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 detects surgical tools such as forceps, specific biological parts, bleeding, mist when using the energy treatment tool 11112, and the like by detecting the shape and color of the edge of the object included in the captured image. Can be recognized. When displaying the captured image on the display device 11202, the control unit 11413 may display various types of surgery support information superimposed on the image of the surgical unit using the recognition result. Surgery support information is displayed in a superimposed manner and presented to the operator 11131, thereby reducing the burden on the operator 11131 and allowing the operator 11131 to proceed with surgery reliably.

  A transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electric signal cable corresponding to electric signal communication, an optical fiber corresponding to optical communication, or a composite cable thereof.

  Here, in the illustrated example, communication is performed by wire using the transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may be performed wirelessly.

  Here, although an endoscopic surgery system has been described as an example, the technology according to the present disclosure may be applied to, for example, a microscope surgery system and the like.

<Application examples to mobile objects>
The technology according to the present disclosure (present technology) can be applied to various products. For example, the technology according to the present disclosure is realized as a device that is mounted on any type of mobile body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, and a robot. May be.

  FIG. 22 is a block diagram illustrating a schematic configuration example of a vehicle control system that is an example of a mobile control system to which the technology according to the present disclosure can be applied.

  The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example illustrated in FIG. 22, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, a vehicle exterior information detection unit 12030, a vehicle interior information detection unit 12040, and an integrated control unit 12050. Further, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, a sound image output unit 12052, and an in-vehicle network I / F (Interface) 12053 are illustrated.

  The drive system control unit 12010 controls the operation of the device related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 includes a driving force generator for generating a driving force of a vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism that adjusts and a braking device that generates a braking force of the vehicle.

  The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as a headlamp, a back lamp, a brake lamp, a blinker, or a fog lamp. In this case, the body control unit 12020 can be input with radio waves transmitted from a portable device that substitutes for a key or signals from various switches. The body system control unit 12020 receives input of these radio waves or signals, and controls a door lock device, a power window device, a lamp, and the like of the vehicle.

  The vehicle outside information detection unit 12030 detects information outside the vehicle on which the vehicle control system 12000 is mounted. For example, the imaging unit 12031 is connected to the vehicle exterior information detection unit 12030. The vehicle exterior information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle and receives the captured image. The vehicle outside information detection unit 12030 may perform an object detection process or a distance detection process such as a person, a car, an obstacle, a sign, or a character on a road surface based on the received image.

  The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of received light. The imaging unit 12031 can output an electrical signal as an image, or can output it as distance measurement information. Further, the light received by the imaging unit 12031 may be visible light or invisible light such as infrared rays.

  The vehicle interior information detection unit 12040 detects vehicle interior information. For example, a driver state detection unit 12041 that detects a driver's state is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that images the driver, and the vehicle interior information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated or it may be determined whether the driver is asleep.

  The microcomputer 12051 calculates a control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside / outside the vehicle acquired by the vehicle outside information detection unit 12030 or the vehicle interior information detection unit 12040, and the drive system control unit A control command can be output to 12010. For example, the microcomputer 12051 realizes ADAS (Advanced Driver Assistance System) functions including vehicle collision avoidance or impact mitigation, tracking based on inter-vehicle distance, vehicle speed maintenance, vehicle collision warning, or vehicle lane departure warning. It is possible to perform cooperative control for the purpose.

  Further, the microcomputer 12051 controls the driving force generator, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040. It is possible to perform cooperative control for the purpose of automatic driving that autonomously travels without depending on the operation.

  Further, the microcomputer 12051 can output a control command to the body system control unit 12030 based on information outside the vehicle acquired by the vehicle outside information detection unit 12030. For example, the microcomputer 12051 controls the headlamp according to the position of the preceding vehicle or the oncoming vehicle detected by the outside information detection unit 12030, and performs cooperative control for the purpose of anti-glare, such as switching from a high beam to a low beam. It can be carried out.

  The sound image output unit 12052 transmits an output signal of at least one of sound and image to an output device capable of visually or audibly notifying information to a vehicle occupant or the outside of the vehicle. In the example of FIG. 22, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are illustrated as output devices. The display unit 12062 may include at least one of an on-board display and a head-up display, for example.

  FIG. 23 is a diagram illustrating an example of the installation position of the imaging unit 12031.

  In FIG. 23, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

  The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as a front nose, a side mirror, a rear bumper, a back door, and an upper part of a windshield in the vehicle interior of the vehicle 12100. The imaging unit 12101 provided in the front nose and the imaging unit 12105 provided in the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100. The imaging units 12102 and 12103 provided in the side mirror mainly acquire an image of the side of the vehicle 12100. The imaging unit 12104 provided in the rear bumper or the back door mainly acquires an image behind the vehicle 12100. The imaging unit 12105 provided on the upper part of the windshield in the passenger compartment is mainly used for detecting a preceding vehicle or a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.

  FIG. 23 shows an example of the imaging range of the imaging units 12101 to 12104. The imaging range 12111 indicates the imaging range of the imaging unit 12101 provided in the front nose, the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided in the side mirrors, respectively, and the imaging range 12114 The imaging range of the imaging part 12104 provided in the rear bumper or the back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, an overhead image when the vehicle 12100 is viewed from above is obtained.

  At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera including a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.

  For example, the microcomputer 12051, based on the distance information obtained from the imaging units 12101 to 12104, the distance to each three-dimensional object in the imaging range 12111 to 12114 and the temporal change in this distance (relative speed with respect to the vehicle 12100). In particular, it is possible to extract, as a preceding vehicle, a three-dimensional object that travels at a predetermined speed (for example, 0 km / h or more) in the same direction as the vehicle 12100, particularly the closest three-dimensional object on the traveling path of the vehicle 12100. it can. Further, the microcomputer 12051 can set an inter-vehicle distance to be secured in advance before the preceding vehicle, and can perform automatic brake control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. Thus, cooperative control for the purpose of autonomous driving or the like autonomously traveling without depending on the operation of the driver can be performed.

  For example, the microcomputer 12051 converts the three-dimensional object data related to the three-dimensional object to other three-dimensional objects such as a two-wheeled vehicle, a normal vehicle, a large vehicle, a pedestrian, and a utility pole based on the distance information obtained from the imaging units 12101 to 12104. It can be classified and extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 is connected via the audio speaker 12061 or the display unit 12062. By outputting a warning to the driver and performing forced deceleration or avoidance steering via the drive system control unit 12010, driving assistance for collision avoidance can be performed.

  At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the captured images of the imaging units 12101 to 12104. Such pedestrian recognition is, for example, whether or not the user is a pedestrian by performing a pattern matching process on a sequence of feature points indicating the outline of an object and a procedure for extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras. It is carried out by the procedure for determining. When the microcomputer 12051 determines that there is a pedestrian in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 has a rectangular contour line for emphasizing the recognized pedestrian. The display unit 12062 is controlled so as to be superimposed and displayed. Moreover, the audio | voice image output part 12052 may control the display part 12062 so that the icon etc. which show a pedestrian may be displayed on a desired position.

  In this specification, the system represents the entire apparatus constituted by a plurality of apparatuses.

  In addition, the effect described in this specification is an illustration to the last, and is not limited, Moreover, there may exist another effect.

  The embodiments of the present technology are not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present technology.

In addition, this technique can also take the following structures.
(1)
A translucent translucent substrate;
A semiconductor chip;
The semiconductor chip and a component for transmitting and receiving signals,
The semiconductor chip and the component are disposed on the same surface of the translucent substrate.
(2)
The semiconductor device according to (1), wherein the semiconductor chip includes an image sensor.
(3)
The semiconductor device according to (1) or (2), wherein the component is a passive component, an IC (Integrated Circuit), or a KGD (Known Good Die).
(4)
The semiconductor device according to any one of (1) to (3), wherein the semiconductor chip and the component are connected to the translucent substrate with an adhesive.
(5)
The semiconductor device according to any one of (1) to (4), wherein a space is formed between the translucent substrate and the semiconductor chip.
(6)
The semiconductor device according to any one of (1) to (4), wherein a transparent material is filled between the translucent substrate and the semiconductor chip.
(7)
The semiconductor device according to any one of (1) to (6), wherein a part of the transmissive substrate is formed thin, and the component is disposed in the thinly formed portion.
(8)
The semiconductor device according to any one of (1) to (7), wherein a part of the transmissive substrate is formed thin, and the semiconductor chip is disposed in the thinly formed part.
(9)
The semiconductor device according to any one of (1) to (8), wherein a wiring layer is formed in a region where the component of the transparent substrate is disposed.
(10)
The semiconductor device according to (9), wherein a part of the wiring layer is connected to the component and another part is connected to an external device.
(11)
The external device is an FPC (Flexible Print Board). The semiconductor device according to (10).
(12)
The semiconductor device according to (10), wherein the external device is a terminal for supplying electric power to an actuator that drives a lens.
(13)
The semiconductor device according to any one of (1) to (12), wherein the semiconductor chip includes an electrode on a surface facing the surface on which the transmissive substrate is fixed.
(14)
A translucent translucent substrate;
A semiconductor chip including an image sensor;
Parts for exchanging signals with the semiconductor chip;
A lens unit comprising a lens for condensing light on the image sensor;
The said semiconductor chip and the said components are arrange | positioned on the same surface of the said translucent base | substrate. The electronic device.
(15)
Apply an adhesive to the translucent translucent substrate,
A manufacturing method of manufacturing a semiconductor device by fixing a semiconductor chip and a component that transmits and receives signals to and from the semiconductor chip to the translucent substrate with the adhesive.
(16)
The manufacturing method according to (15), wherein the semiconductor chip on which an imaging element is formed is fixed to the light-transmitting substrate.
(17)
The manufacturing method according to (15) or (16), wherein the adhesive is applied to the translucent substrate that is partially thinned, and the component is fixed to the thinly formed portion.
(18)
The component is fixed with the adhesive to a part of the wiring layer of the transmissive substrate in which a wiring layer is formed in a region where the component is disposed,
The manufacturing method according to any one of (15) to (17), wherein an external device is connected to a portion of the wiring layer where the component is not fixed.

  DESCRIPTION OF SYMBOLS 10 Semiconductor device, 11 Semiconductor substrate, 12 Wiring layer, 13 Pad electrode, 17 Insulating layer, 20 Protective layer, 26 Through electrode, 27 Support substrate, 28 Adhesive layer, 29 Micro lens, 30 Color filter, 31 External terminal, 32 Semiconductor Chip, 41 parts, 101 translucent substrate, 102 adhesive, 103 semiconductor wafer

Claims (18)

A translucent translucent substrate;
A semiconductor chip;
The semiconductor chip and a component for transmitting and receiving signals,
The semiconductor chip and the component are disposed on the same surface of the translucent substrate. The semiconductor device according to claim 1, wherein the semiconductor chip includes an image sensor. The semiconductor device according to claim 1, wherein the component is a passive component, an IC (Integrated Circuit), or a KGD (Known Good Die). The semiconductor device according to claim 1, wherein the semiconductor chip and the component are connected to the translucent substrate with an adhesive. The semiconductor device according to claim 1, wherein a space is formed between the translucent substrate and the semiconductor chip. The semiconductor device according to claim 1, wherein a transparent material is filled between the translucent substrate and the semiconductor chip. The semiconductor device according to claim 1, wherein a part of the transparent base is formed thin, and the component is disposed in the thin part. The semiconductor device according to claim 1, wherein a part of the transmissive substrate is formed thin, and the semiconductor chip is disposed in the thin part. The semiconductor device according to claim 1, wherein a wiring layer is formed in a region of the transparent substrate where the component is disposed. The semiconductor device according to claim 9, wherein a part of the wiring layer is connected to the component, and another part is connected to an external device. The semiconductor device according to claim 10, wherein the external device is an FPC (Flexible Print Board). The semiconductor device according to claim 10, wherein the external device is a terminal for supplying electric power to an actuator that drives a lens. The semiconductor device according to claim 1, wherein the semiconductor chip includes an electrode on a surface facing the surface on which the transmissive substrate is fixed. A translucent translucent substrate;
A semiconductor chip including an image sensor;
Parts for exchanging signals with the semiconductor chip;
A lens unit comprising a lens for condensing light on the image sensor;
The said semiconductor chip and the said components are arrange | positioned on the same surface of the said translucent base | substrate. The electronic device. Apply an adhesive to the translucent translucent substrate,
A manufacturing method of manufacturing a semiconductor device by fixing a semiconductor chip and a component that transmits and receives signals to and from the semiconductor chip to the translucent substrate with the adhesive. The manufacturing method according to claim 15, wherein the semiconductor chip on which an imaging element is formed is fixed to the translucent substrate. The manufacturing method according to claim 15, wherein the adhesive is applied to the translucent substrate that is partially thinned, and the component is fixed to the thinly formed portion. The component is fixed with the adhesive to a part of the wiring layer of the transmissive substrate in which a wiring layer is formed in a region where the component is disposed,
The manufacturing method according to claim 15, wherein an external device is connected to a portion of the wiring layer where the component is not fixed.

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