JP2019026879A - Electronic component manufacturing method and electronic component - Google Patents
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Abstract
Description
本発明は、被めっき層上にめっき層を形成する電子部品の製造方法、及び電子部品に関する。 The present invention relates to an electronic component manufacturing method for forming a plating layer on a layer to be plated, and an electronic component.
例えばプリント配線板の場合、例えばガラス製の基板に積層し、表面の全面に金属膜を形成した後、フォトリソグラフィの技術により、金属膜をパターン化して金属配線を設けている。特許文献１には、高分子樹脂を含む基材の表裏両面又は片面に電気的導電性を有する金属配線をフォトリソグラフィによって形成することが開示されている。 For example, in the case of a printed wiring board, for example, a metal film is laminated on a glass substrate and a metal film is formed on the entire surface, and then the metal film is patterned by a photolithography technique to provide a metal wiring. Patent Document 1 discloses that metal wiring having electrical conductivity is formed by photolithography on both front and back surfaces or one surface of a base material containing a polymer resin.
上述のフォトリソグラフィはレジスト塗布、露光、現像、エッチング等の工程を要し、工程数が多く、煩雑である。 The above-described photolithography requires steps such as resist coating, exposure, development, and etching, and is complicated and complicated.
本発明は斯かる事情に鑑みてなされたものであり、難めっき材料からなる被めっき層に対しても、特殊な薬液又はフォトリソグラフィの技術を用いることなく、容易に、密着性が良好であるめっきを行うことができる電子部品の製造方法、及び銅箔引き剥がし試験を行った場合のピール強度が０．２Ｎ／ｍｍ以上である電子部品を提供することを目的とする。 This invention is made | formed in view of such a situation, and it is easy to adhere | attach with respect to the to-be-plated layer which consists of a difficult plating material, without using a special chemical | medical solution or the technique of photolithography. It is an object of the present invention to provide an electronic component manufacturing method capable of performing plating and an electronic component having a peel strength of 0.2 N / mm or more when a copper foil peeling test is performed.
本発明に係る電子部品の製造方法は、パルス幅の単位がピコ秒であるピコ秒レーザ光、又はフェムト秒であるフェムト秒レーザ光を被めっき層の表面に照射して該表面を粗化し、粗化した該表面上にめっき層を形成することを特徴とする。 In the method for manufacturing an electronic component according to the present invention, the surface of the layer to be plated is roughened by irradiating the surface of the layer to be plated with a picosecond laser beam whose pulse width unit is picoseconds, or a femtosecond laser beam which is femtoseconds. A plating layer is formed on the roughened surface.
ピコ秒レーザ光又はフェムト秒レーザ光のパルス幅は非常に短く、熱拡散する前に融点を超える温度に被めっき層が加熱され、蒸発が起こるので、熱影響の少ない加工ができ、表面に微細で鋭い多角錐状の凹凸が形成される。アンカー効果により、めっき層の被めっき層への密着性が良好である。即ち、被めっき層が、めっき層との間で化学結合が得られにくい、又は表面に凹凸が得られにくい難めっき材料からなる場合であっても、良好な密着性が得られる。 The pulse width of the picosecond laser beam or femtosecond laser beam is very short, and the plated layer is heated to a temperature exceeding the melting point before thermal diffusion, and evaporation occurs. A sharp polygonal concavity and convexity are formed. Due to the anchor effect, the adhesion of the plating layer to the layer to be plated is good. That is, even if the layer to be plated is made of a difficult plating material in which chemical bonding with the plating layer is difficult to obtain or unevenness on the surface is difficult to obtain, good adhesion can be obtained.
以下、本発明をその実施の形態を示す図面に基づいて具体的に説明する。
（本発明の概要）
本発明の電子部品の製造方法は、パルス幅の単位がピコ秒であるピコ秒レーザ光、又はフェムト秒であるフェムト秒レーザ光を被めっき層の表面に照射して該表面を粗化し、粗化した該表面上にめっき層を形成する。
上記のように、ピコ秒レーザ光又はフェムト秒レーザ光により、表面を粗化した上でめっきを行う。ピコ秒レーザ光又はフェムト秒レーザ光は、パルス幅がピコ秒オーダー又はフェムト秒オーダーであり、非常に短く、熱拡散する前に融点を超える温度に被めっき層が加熱され、蒸発が起こる。レーザ光が照射された部分はアブレーションが生じて除去される。熱影響の少ない加工ができ、表面に微細で鋭い多角錐形状の凹凸が形成される。従って、アンカー効果により、めっき層の被めっき層への密着性が良好である。被めっき層が、めっき層との間で化学結合が得られにくい、又は表面に凹凸が得られにくい難めっき材料からなる場合であっても、良好な密着性が得られる。
Hereinafter, the present invention will be specifically described with reference to the drawings showing embodiments thereof.
(Outline of the present invention)
The method of manufacturing an electronic component of the present invention irradiates the surface of the layer to be plated with a picosecond laser beam having a pulse width unit of picoseconds or a femtosecond laser beam with femtoseconds to roughen the surface. A plating layer is formed on the converted surface.
As described above, plating is performed after the surface is roughened by picosecond laser light or femtosecond laser light. Picosecond laser light or femtosecond laser light has a pulse width on the order of picoseconds or femtoseconds, and is very short. The plated layer is heated to a temperature exceeding the melting point before thermal diffusion, and evaporation occurs. The portion irradiated with the laser light is ablated and removed. Processing with little heat influence can be performed, and fine and sharp polygonal pyramid-shaped irregularities are formed on the surface. Therefore, the adhesion of the plating layer to the layer to be plated is good due to the anchor effect. Good adhesion can be obtained even when the layer to be plated is made of a material that is difficult to obtain a chemical bond with the plating layer or is difficult to obtain unevenness on the surface.
上述の電子部品の製造方法において、前記ピコ秒レーザ光又は前記フェムト秒レーザ光を照射して、前記表面を粗化しつつ配線パターンを形成し、該配線パターンの表面に前記めっき層を形成してもよい。
上記構成によれば、工程数が多く、煩雑であるフォトリソグラフィの手法を用いて配線を設ける場合と比較して、少ない工程数で、容易に配線を設けることができる。
In the electronic component manufacturing method described above, the wiring pattern is formed while irradiating the picosecond laser beam or the femtosecond laser beam to roughen the surface, and the plating layer is formed on the surface of the wiring pattern. Also good.
According to the above configuration, it is possible to easily provide the wiring with a small number of processes as compared with the case where the wiring is provided by using a complicated photolithography technique with a large number of processes.
上述の電子部品の製造方法において、前記表面に無電解銅めっきを行って第１銅めっき層を形成し、該第１銅めっき層上に電解銅めっきを行って第２銅めっき層を形成してもよい。
上記構成によれば、めっき層の厚みを厚くすることができ、また、被めっき層の表面からめっき層を平面視で長方形状又は台形状に突出させることができる。無電解Ｃｕめっきは、自己触媒めっきであるのが好ましい。
In the above-described method for manufacturing an electronic component, electroless copper plating is performed on the surface to form a first copper plating layer, and electrolytic copper plating is performed on the first copper plating layer to form a second copper plating layer. May be.
According to the said structure, the thickness of a plating layer can be thickened, and a plating layer can be made to protrude from the surface of a to-be-plated layer in a rectangular shape or trapezoid shape by planar view. The electroless Cu plating is preferably autocatalytic plating.
上述の電子部品の製造方法において、前記フェムト秒レーザ光はフェムト秒グリーンレーザを用いて照射することにしてもよい。
フェムト秒グリーンレーザは、第二高調波であるため、比較的高出力を取り出すことができ、被めっき層が合成樹脂製等であっても、被めっき層への吸収が良好である。
フェムト秒グリーンレーザが出射する光の波長は５００ｎｍ〜５３０ｎｍであるのが好ましい。パルス幅は、１フェムト秒〜１０００フェムト秒であるのが好ましい。
また、ピコ秒レーザを用いる場合、ピコ秒レーザが出射する光の波長は５００ｎｍ〜５３０ｎｍであるのが好ましい。パルス幅は、１ピコ秒〜１０ピコ秒であるのが好ましい。
In the above-described electronic component manufacturing method, the femtosecond laser light may be irradiated using a femtosecond green laser.
Since the femtosecond green laser is a second harmonic, a relatively high output can be taken out, and even when the layer to be plated is made of synthetic resin, the absorption to the layer to be plated is good.
The wavelength of light emitted from the femtosecond green laser is preferably 500 nm to 530 nm. The pulse width is preferably from 1 femtosecond to 1000 femtoseconds.
When using a picosecond laser, the wavelength of light emitted from the picosecond laser is preferably 500 nm to 530 nm. The pulse width is preferably 1 picosecond to 10 picoseconds.
上述の電子部品の製造方法において、前記被めっき層は、アクリル樹脂、ＰＥＴ、ＰＴＦＥ、スライドガラス、エポキシ樹脂、液晶ポリマー、及びポリイミド樹脂からなる群から選択される材料を含んでもよい。
本実施の形態の電子部品の製造方法によれば、アクリル樹脂、ＰＥＴ、ＰＴＦＥ、スライドガラス、エポキシ樹脂、液晶ポリマー、及びポリイミド樹脂等の難めっき性材料にも密着性良好にめっきを設けることができる。
In the electronic component manufacturing method described above, the layer to be plated may include a material selected from the group consisting of acrylic resin, PET, PTFE, glass slide, epoxy resin, liquid crystal polymer, and polyimide resin.
According to the method for manufacturing an electronic component of the present embodiment, it is possible to provide plating with good adhesion even on difficult-to-plate materials such as acrylic resin, PET, PTFE, slide glass, epoxy resin, liquid crystal polymer, and polyimide resin. it can.
上述の電子部品の製造方法において、前記めっき層は銅めっき層であり、前記被めっき層から前記めっき層を引き剥がす銅箔引き剥がし試験を行った場合のピール強度は、０．２Ｎ／ｍｍ以上であるのが好ましい。
上記構成によれば、電子部品のめっき層の被めっき層への密着性が良好である。
ピール強度は、アクリル樹脂及びスライドガラスの場合、０．３Ｎ／ｍｍ以上であるのが好ましく、ＰＴＦＥ、エポキシ樹脂、及び液晶ポリマーの場合、０．７Ｎ／ｍｍ以上であるのが好ましい。
In the above-described method for manufacturing an electronic component, the plating layer is a copper plating layer, and the peel strength when a copper foil peeling test for peeling the plating layer from the plated layer is 0.2 N / mm or more Is preferred.
According to the said structure, the adhesiveness to the to-be-plated layer of the plating layer of an electronic component is favorable.
The peel strength is preferably 0.3 N / mm or more in the case of acrylic resin and slide glass, and preferably 0.7 N / mm or more in the case of PTFE, epoxy resin, and liquid crystal polymer.
本実施の形態の電子部品は、アクリル樹脂、ＰＥＴ、ＰＴＦＥ、スライドガラス、エポキシ樹脂、液晶ポリマー、及びポリイミド樹脂からなる群から選択される材料を含む被めっき層の表面に銅めっき層が設けられている電子部品において、前記被めっき層から前記銅めっき層を引き剥がす銅箔引き剥がし試験を行った場合のピール強度は、０．２Ｎ／ｍｍ以上である。
上記構成によれば、電子部品の銅めっき層の被めっき層への密着性が良好である。
ピール強度は、アクリル樹脂及びスライドガラスの場合、０．３Ｎ／ｍｍ以上であるのが好ましく、ＰＴＦＥ、エポキシ樹脂、及び液晶ポリマーの場合、０．７Ｎ／ｍｍ以上であるのが好ましい。
In the electronic component of this embodiment, a copper plating layer is provided on the surface of a layer to be plated containing a material selected from the group consisting of acrylic resin, PET, PTFE, slide glass, epoxy resin, liquid crystal polymer, and polyimide resin. In the electronic component, the peel strength when a copper foil peeling test for peeling the copper plating layer from the plated layer is 0.2 N / mm or more.
According to the said structure, the adhesiveness to the to-be-plated layer of the copper plating layer of an electronic component is favorable.
The peel strength is preferably 0.3 N / mm or more in the case of acrylic resin and slide glass, and preferably 0.7 N / mm or more in the case of PTFE, epoxy resin, and liquid crystal polymer.
以下、図面に基づいて具体的に説明する。
（実施の形態１）
図１は、実施の形態１に係る電子部品１の配線部分を示す模式的断面図である。
電子部品１は、表面に複数の凹部２０が設けられた基層２を有する。各凹部２０の表面には、Ｃｕ配線パターン５が設けられている。
Hereinafter, it demonstrates concretely based on drawing.
(Embodiment 1)
FIG. 1 is a schematic cross-sectional view showing a wiring portion of an electronic component 1 according to the first embodiment.
The electronic component 1 has a base layer 2 having a plurality of recesses 20 provided on the surface. A Cu wiring pattern 5 is provided on the surface of each recess 20.
以下、電子部品１の製造方法について説明する。
図２はめっき処理を示すフローチャート、図３は電子部品の製造を説明するための模式的断面図である。
基層２は、アクリル樹脂、ＰＥＴ、ＰＴＦＥ、スライドガラス、エポキシ樹脂、液晶ポリマー、又はポリイミド樹脂等の材料からなる（図３Ａ）。
まず、基層２の表面を粗化する（Ｓ１、図３Ｂ）。フェムト秒レーザ光又はピコ秒レーザ光を照射し、基層２の表面の、配線パターンを形成する部分を除去して角溝状の凹部２０を形成し、かつ凹部２０の底面及び側面を粗化する。
Hereinafter, a method for manufacturing the electronic component 1 will be described.
FIG. 2 is a flowchart showing a plating process, and FIG. 3 is a schematic cross-sectional view for explaining the manufacture of an electronic component.
The base layer 2 is made of a material such as acrylic resin, PET, PTFE, glass slide, epoxy resin, liquid crystal polymer, or polyimide resin (FIG. 3A).
First, the surface of the base layer 2 is roughened (S1, FIG. 3B). Irradiation with femtosecond laser light or picosecond laser light removes a portion of the surface of the base layer 2 where the wiring pattern is to be formed to form a concave portion 20 having a square groove shape, and roughens the bottom and side surfaces of the concave portion 20. .
次に、基層２の表面に無電解Ｃｕめっきを行い、めっき膜３０を形成する（Ｓ２、図３Ｃ）。無電解Ｃｕめっき液としては、強アルカリ領域でホルマリンを還元剤とする還元析出型の無電解Ｃｕめっき液を用いることができる。キレート剤としては、ＥＤＴＡ又はロッシェル塩を用いることができる。めっきの前に、無電解Ｃｕめっき液中の還元剤が基層２上で電子を放出するように触媒となるＰｄを付与する。無電解Ｃｕめっき液中のＣｕイオンが、還元剤の酸化反応で放出される電子によって還元され、基層２の表面に析出し、めっき膜３０が形成される。 Next, electroless Cu plating is performed on the surface of the base layer 2 to form a plating film 30 (S2, FIG. 3C). As the electroless Cu plating solution, a reduction precipitation type electroless Cu plating solution using formalin as a reducing agent in a strong alkaline region can be used. As the chelating agent, EDTA or Rochelle salt can be used. Prior to plating, Pd serving as a catalyst is applied so that the reducing agent in the electroless Cu plating solution emits electrons on the base layer 2. Cu ions in the electroless Cu plating solution are reduced by the electrons released by the oxidation reaction of the reducing agent, and are deposited on the surface of the base layer 2 to form the plating film 30.
表面研磨を行い、非粗化部分に形成されためっき膜３０を除去する（Ｓ３、図３Ｄ）。凹部２０の底面及び側面には、第１Ｃｕめっき層３が残存する。 Surface polishing is performed to remove the plating film 30 formed on the non-roughened portion (S3, FIG. 3D). The first Cu plating layer 3 remains on the bottom and side surfaces of the recess 20.
電解Ｃｕめっきを行い、第１Ｃｕめっき層３上に第２Ｃｕめっき層４を形成する（Ｓ４、図３Ｅ）。電解Ｃｕめっき液組成及びめっき条件の一例を下記に示す。
＜電解Ｃｕめっき液組成＞
硫酸銅・五水和物：１００ｇ／Ｌ
硫酸：１９０ｇ／Ｌ
塩素：５０ｍｇ／Ｌ
光沢剤：適量
＜電解Ｃｕめっき条件＞
液温：室温
電流密度：２Ａ／ｄｍ2
以上より、Ｃｕ配線パターン５が形成される。Ｃｕ配線パターン５は、基層２の表面から断面視で長方形状又は台形状に突出するように設けてもよい。電解Ｃｕめっきは場合により、省略することができる。
最後に、例えば８０〜２００℃で、３０分間〜１時間ベーキングを行う（Ｓ５）。なお、基層２がＰＥＴからなる場合、ベーキングを省略することができる。
Electrolytic Cu plating is performed to form a second Cu plating layer 4 on the first Cu plating layer 3 (S4, FIG. 3E). An example of the electrolytic Cu plating solution composition and plating conditions is shown below.
<Electrolytic Cu plating solution composition>
Copper sulfate pentahydrate: 100 g / L
Sulfuric acid: 190 g / L
Chlorine: 50 mg / L
Brightener: Appropriate amount <Electrolytic Cu plating conditions>
Liquid temperature: room temperature Current density: 2 A / dm 2
Thus, the Cu wiring pattern 5 is formed. The Cu wiring pattern 5 may be provided so as to protrude from the surface of the base layer 2 into a rectangular shape or a trapezoidal shape in a sectional view. The electrolytic Cu plating can be omitted in some cases.
Finally, for example, baking is performed at 80 to 200 ° C. for 30 minutes to 1 hour (S5). In addition, baking can be abbreviate | omitted when the base layer 2 consists of PET.
図４は、本実施の形態のめっき部分を説明するための模式的断面図である。基層２にフェムト秒レーザ光を照射することにより（図４Ａ）、基層２に凹部２０が形成される（図４Ｂ）。凹部２０は、表面に微細な多角錐状の凹凸２０ａを有する。
凹部２０上に第１Ｃｕめっき層３が形成される（図４Ｃ）。アンカー効果により、密着性が顕著に向上する。
FIG. 4 is a schematic cross-sectional view for explaining the plated portion of the present embodiment. By irradiating the base layer 2 with femtosecond laser light (FIG. 4A), a recess 20 is formed in the base layer 2 (FIG. 4B). The recess 20 has fine polygonal pyramids 20a on the surface.
A first Cu plating layer 3 is formed on the recess 20 (FIG. 4C). The anchor effect significantly improves the adhesion.
図５は、従来のめっき部分を示す模式的断面図である。基層２（図５Ａ）に、特殊の薬液等を用いてＣｕめっき層３３を設ける（図５Ｂ）。
図５に示すように、基層２−Ｃｕめっき層３３間の化学結合に乏しく、また、基層２の表面に凹凸がないので密着性が悪く、Ｃｕめっき層３３は容易に剥離する。
FIG. 5 is a schematic cross-sectional view showing a conventional plated portion. A Cu plating layer 33 is provided on the base layer 2 (FIG. 5A) using a special chemical solution or the like (FIG. 5B).
As shown in FIG. 5, the chemical bond between the base layer 2 and the Cu plating layer 33 is poor, and since there is no unevenness on the surface of the base layer 2, the adhesion is poor and the Cu plating layer 33 is easily peeled off.
（評価試験及び断面観察）
アクリル樹脂、ＰＥＴ、ＰＴＦＥ、スライドガラス、エポキシ樹脂、又は液晶ポリマーからなる基材上に、上述のようにして、フェムト秒グリーンレーザを用いてＣｕ箔を設け、ピール（銅箔引き剥がし）試験を行ってピール強度を求めた。
(Evaluation test and cross-sectional observation)
On the base material made of acrylic resin, PET, PTFE, slide glass, epoxy resin, or liquid crystal polymer, a Cu foil is provided using a femtosecond green laser as described above, and a peel (copper foil peeling) test is performed. The peel strength was determined.
ピール試験は、めっきにより銅箔を設けた基材を両面テープにより試験基板に貼り付け、試験基板を長手方向にスライドさせながら、９０°上方向へ銅箔を引き剥がすことにより行った。
試験条件は以下の通りである。
・試験装置 引張圧縮試験機（株式会社島津製作所製「ＥＺ ＴＥＳＴ」）
・引き剥がし速度 ５０ｍｍ／ｍｉｎ
・引き剥がし方向 ９０°
・引き剥がし長さ ３０ｍｍ
・銅箔寸法 幅５ｍｍ×長さ９０ｍｍ
・引き剥がし速度 ５４ｍｍ／ｍｉｎ
その結果を下記の表１及び図６に示す。図６の横軸のａはアクリル樹脂、ｂはＰＥＴ、ｃはＰＴＦＥ、ｄはスライドガラス、ｅはエポキシ樹脂、ｆは液晶ポリマーである。図６の縦軸は、ピール強度（Ｎ／ｍｍ）である。
The peel test was performed by attaching a base material provided with a copper foil by plating to a test substrate using a double-sided tape, and peeling the copper foil upward by 90 ° while sliding the test substrate in the longitudinal direction.
The test conditions are as follows.
・ Test equipment Tension / compression tester ("EZ TEST" manufactured by Shimadzu Corporation)
・ Peeling speed 50mm / min
・ Peeling direction 90 °
・ Peeling length 30mm
・ Copper foil width 5mm x length 90mm
・ Peeling speed 54mm / min
The results are shown in Table 1 below and FIG. In FIG. 6, a is an acrylic resin, b is PET, c is PTFE, d is a slide glass, e is an epoxy resin, and f is a liquid crystal polymer. The vertical axis in FIG. 6 is the peel strength (N / mm).
フェムト秒グリーンレーザのレーザ条件１、２、３を下記の表２〜表４に示す。 The laser conditions 1, 2, and 3 of the femtosecond green laser are shown in Tables 2 to 4 below.
表１及び図６より、ＰＥＴで０．２〜０．２６Ｎ／ｍｍ、アクリル樹脂及びスライドガラスで０．３〜０．３４Ｎ／ｍｍ、ＰＴＦＥ、エポキシ樹脂、及び液晶ポリマーで０．７８〜０．８８Ｎ／ｍｍの高いピール強度が得られており、密着性が良好であることが分かる。 From Table 1 and FIG. 6, 0.2 to 0.26 N / mm for PET, 0.3 to 0.34 N / mm for acrylic resin and glass slide, 0.78 to 0.004 for PTFE, epoxy resin, and liquid crystal polymer. It can be seen that a high peel strength of 88 N / mm is obtained and the adhesion is good.
図７は、アクリル樹脂の基材にフェムト秒グリーンレーザ光を照射したときの加工部を示すＳＥＭ写真であり、図８は加工部と未加工部との境界を示すＳＥＭ写真である。
図７及び図８より、アクリル樹脂の基材の表面が粗化されていることが分かる。
FIG. 7 is an SEM photograph showing a processed part when an acrylic resin substrate is irradiated with femtosecond green laser light, and FIG. 8 is an SEM photograph showing a boundary between the processed part and the unprocessed part.
7 and 8 that the surface of the acrylic resin substrate is roughened.
図９は、アクリル樹脂製の基材にフェムト秒グリーンレーザ光を照射し、Ｃｕめっきを設けたときの断面を示すＳＥＭ写真である。図１０は、ＰＥＴ製の基材にフェムト秒グリーンレーザ光を照射し、Ｃｕめっきを設けたときの断面を示すＳＥＭ写真である。図１１は、ＰＴＦＥ製の基材にフェムト秒グリーンレーザ光を照射し、Ｃｕめっきを設けたときの断面を示すＳＥＭ写真である。
いずれの場合も、基材とＣｕめっき層との間に微細な凹凸があり、アンカー効果により強固に接合されていることが分かる。
FIG. 9 is an SEM photograph showing a cross-section when the acrylic resin base material is irradiated with femtosecond green laser light and Cu plating is provided. FIG. 10 is an SEM photograph showing a cross section when a PET substrate is irradiated with femtosecond green laser light and Cu plating is provided. FIG. 11 is an SEM photograph showing a cross section when a PTFE base material is irradiated with femtosecond green laser light and Cu plating is provided.
In any case, it can be seen that there are fine irregularities between the base material and the Cu plating layer, and the substrate is firmly joined by the anchor effect.
下記の表５に、各材質の基材にレーザ条件１によりフェムト秒グリーンレーザ光を照射したときの表面粗さとしての算術平均粗さＲａ（μｍ）及び最大高さ粗さＲｚ（μｍ）を求めた結果を示す。 Table 5 below shows the arithmetic average roughness Ra (μm) and the maximum height roughness Rz (μm) as the surface roughness when the base material of each material is irradiated with femtosecond green laser light under laser condition 1. The obtained result is shown.
表５より、いずれの材質の基材も、未加工部と比較して、レーザ加工部が著しく表面粗さが大きくなっていることが分かる。 From Table 5, it can be seen that the surface roughness of the base material of any material is remarkably increased in the laser processed portion as compared with the unprocessed portion.
以上より、本実施の形態の電子部品の製造方法により、基層の表面に微細で鋭い多角錐形状の凹凸が形成され、被めっき層が、めっき層との間で化学結合が得られにくい、又は表面に凹凸が得られにくい難めっき材料からなる場合であっても、アンカー効果によりめっき層の被めっき層への密着性が良好であることが確認された。
本実施の形態の製造方法により得られた電子部品のピール強度は、０．２Ｎ／ｍｍ以上である。
As described above, by the method for manufacturing an electronic component of the present embodiment, fine and sharp polygonal pyramid irregularities are formed on the surface of the base layer, and it is difficult to obtain a chemical bond between the plated layer and the plated layer, or It was confirmed that the adhesion of the plating layer to the layer to be plated was good due to the anchor effect even when the surface was made of a difficult plating material in which unevenness was difficult to obtain.
The peel strength of the electronic component obtained by the manufacturing method of the present embodiment is 0.2 N / mm or more.
今回開示された実施の形態は、全ての点で例示であって、制限的なものではないと考えるべきである。本発明の範囲は、上述した意味ではなく、特許請求の範囲と均等の意味及び特許請求の範囲内での全ての変更が含まれることが意図される。
例えば電子部品はプリント配線板に限定されない。めっきも配線部分に行う場合に限定されない。めっきの種類もＣｕめっきに限定されず、Ｎｉめっき等を行うことができる。 フェムト秒レーザの照射条件も実施の形態において説明した場合に限定されない。
The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is not intended to include the above-described meanings, but is intended to include meanings equivalent to the claims and all modifications within the scope of the claims.
For example, the electronic component is not limited to a printed wiring board. The plating is not limited to the case where the wiring is performed. The type of plating is not limited to Cu plating, and Ni plating or the like can be performed. The irradiation condition of the femtosecond laser is not limited to the case described in the embodiment.
１ 電子部品
２ 基層
２０ 凹部
３ 第１Ｃｕめっき層
３０ めっき膜
４ 第２Ｃｕめっき層
５ Ｃｕ配線パターン
DESCRIPTION OF SYMBOLS 1 Electronic component 2 Base layer 20 Recess 3 First Cu plating layer 30 Plating film 4 Second Cu plating layer 5 Cu wiring pattern
Claims (7)
粗化した該表面上にめっき層を形成することを特徴とする電子部品の製造方法。 Irradiating the surface of the layer to be plated with a picosecond laser beam having a pulse width unit of picoseconds or a femtosecond laser beam having femtoseconds, the surface is roughened,
A method for producing an electronic component, comprising forming a plating layer on the roughened surface.
該配線パターンの表面に前記めっき層を形成することを特徴とする請求項１に記載の電子部品の製造方法。 Irradiating the picosecond laser beam or the femtosecond laser beam to form a wiring pattern while roughening the surface,
The method of manufacturing an electronic component according to claim 1, wherein the plating layer is formed on a surface of the wiring pattern.
該第１銅めっき層上に電解銅めっきを行って第２銅めっき層を形成することを特徴とする請求項１又は２に記載の電子部品の製造方法。 Electroless copper plating is performed on the roughened surface to form a first copper plating layer,
3. The method of manufacturing an electronic component according to claim 1, wherein the second copper plating layer is formed by performing electrolytic copper plating on the first copper plating layer.
前記被めっき層から前記めっき層を引き剥がす銅箔引き剥がし試験を行った場合のピール強度は、０．２Ｎ／ｍｍ以上であることを特徴とする請求項５に記載の電子部品の製造方法。 The plating layer is a copper plating layer,
The method for manufacturing an electronic component according to claim 5, wherein a peel strength when a copper foil peeling test for peeling the plating layer from the plated layer is 0.2 N / mm or more.
前記被めっき層から前記銅めっき層を引き剥がす銅箔引き剥がし試験を行った場合のピール強度は、０．２Ｎ／ｍｍ以上であることを特徴とする電子部品。 In an electronic component in which a copper plating layer is provided on the surface of a layer to be plated containing a material selected from the group consisting of acrylic resin, PET, PTFE, slide glass, epoxy resin, liquid crystal polymer, and polyimide resin,
An electronic component having a peel strength of 0.2 N / mm or more when a copper foil peeling test for peeling the copper plating layer from the plated layer is performed.
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