JP2019009418A - Substrate holding member - Google Patents
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Abstract
Description
本発明は、基板保持部材、特にウェハなど基板を保持する真空チャックなどの基板保持部材に関する。 The present invention relates to a substrate holding member, particularly a substrate holding member such as a vacuum chuck for holding a substrate such as a wafer.
半導体製造装置において、ウェハなどの基板を保持するための部材として基板保持部材が用いられる。このような基板保持部材は、基台の表面に複数の凸部が形成されており、凸部の頂面(先端面)でウェハを保持する。 In a semiconductor manufacturing apparatus, a substrate holding member is used as a member for holding a substrate such as a wafer. Such a substrate holding member has a plurality of convex portions formed on the surface of the base, and holds the wafer on the top surface (tip surface) of the convex portions.
凸部と基板との接触面積を極力小さくするためには、凸部の頂面の面積を小さくする必要がある。また、基板を真空吸着するためには、凸部にある程度の高さが必要である。これらにより、凸部は細長い円柱形状に形成される。 In order to minimize the contact area between the convex portion and the substrate, it is necessary to reduce the area of the top surface of the convex portion. Moreover, in order to vacuum-suck the substrate, a certain amount of height is required for the convex portion. Accordingly, the convex portion is formed in an elongated cylindrical shape.
そして、細長い円柱形状の凸部の先端に被膜を形成することが提案されている(特許文献1参照)。また、そして、凸部(突出部)を含む基台(基体)の表面全体に被膜(保護層)を形成することも提案されており、この場合、基台からのパーティクルの脱落を防止するという効果もある(特許文献2参照)。 And it has been proposed to form a coating film at the tip of the elongated cylindrical protrusion (see Patent Document 1). In addition, it has also been proposed to form a coating (protective layer) on the entire surface of the base (base) including the protrusions (protrusions), and in this case, the particles are prevented from falling off from the base. There is also an effect (refer to patent documents 2).
しかしながら、特許文献1のように、凸部が細長い円柱形状であると、凸部と基台との接触面に繰り返し作用する摺動力によって凸部が破損することがあり、長期間に亘り基板を良好な平面度で保持することが困難になることがあった。 However, as in Patent Document 1, if the convex portion has an elongated cylindrical shape, the convex portion may be damaged by a sliding force that repeatedly acts on the contact surface between the convex portion and the base, and the substrate may be damaged over a long period of time. It may be difficult to maintain a good flatness.
一方、特許文献2のように、基台の表面全体に保護膜を形成すると、基台と保護膜との物性の差から長期間使用すると基体と保護膜との間に剥離やクラックが発生する場合があった。これは、線膨張係数、弾性率、密度、硬さ、結晶性など物性がわずかに異なり、温度変化に伴う膨張率の差異に起因する応力や、ウェハの吸着及び脱離が行われる際に発生する応力が原因と考えられる。この応力は、保護膜の下部の基体にまで伝搬し、剥離やクラックの原因となる。このような保護膜の剥離やクラックがパーティクルの発生の原因となることがあり、長期間に亘り基板を良好な平面度で保持することが困難になることがあった。 On the other hand, when a protective film is formed on the entire surface of the base as in Patent Document 2, peeling or cracking occurs between the base and the protective film when used for a long time due to the difference in physical properties between the base and the protective film. There was a case. This occurs when physical properties such as linear expansion coefficient, elastic modulus, density, hardness, and crystallinity are slightly different, and stress caused by differences in expansion coefficient due to temperature changes, and when wafers are adsorbed and desorbed. This is thought to be due to the stress that occurs. This stress propagates to the substrate below the protective film, causing peeling and cracking. Such peeling or cracking of the protective film may cause generation of particles, and it may be difficult to hold the substrate with good flatness for a long period of time.
本発明は、上記従来の問題に鑑みなされたものであり、長期間に亘り基板を良好な平面度で保持することを図り得る基板保持部材を提供することを目的とする。 The present invention has been made in view of the above-described conventional problems, and an object thereof is to provide a substrate holding member capable of holding a substrate with good flatness for a long period of time.
本発明の基板保持部材は、基台と、前記基台の上面に形成され、頂面において基板を保持する複数の凸部とを備える基板保持部材であって、前記複数の凸部は、前記基台の上面から延在する根元部と前記根元部の上に形成され前記頂面を含む頂部とを有し、前記複数の凸部は、前記基台の上面に沿った水平方向における前記根元部の断面積が前記水平方向における前記頂部の断面積よりも大きく、前記複数の凸部は、前記頂部の頂面を含む少な
くとも一部が、前記基台を形成する材質と比較してヤング率が大きい材質から形成された保持部材からなり、前記複数の凸部を構成する各前記保持部材は互いに離間していることを特徴とする。
The substrate holding member of the present invention is a substrate holding member comprising a base and a plurality of convex portions formed on the top surface of the base and holding the substrate on the top surface, wherein the plurality of convex portions are A base portion extending from the top surface of the base and a top portion formed on the base portion and including the top surface, wherein the plurality of convex portions are in the horizontal direction along the top surface of the base. The cross-sectional area of the portion is larger than the cross-sectional area of the top portion in the horizontal direction, and the plurality of convex portions include at least a part including the top surface of the top portion as compared with the material forming the base. The holding member is made of a material having a large thickness, and the holding members constituting the plurality of convex portions are separated from each other.
本発明の基板保持部材によれば、基板と接する頂面を含む凸部の少なくとも一部が、基台を形成する材質と比較してヤング率が大きい材質から形成された保持部材からなる。これにより、凸部が基台と同じ材質からなる場合と比較して、基板と接する頂面での耐摩耗性が向上し、かつ頂面からパーティクルが発生することを抑制することが可能となる。 According to the substrate holding member of the present invention, at least a part of the convex portion including the top surface in contact with the substrate is made of a holding member formed of a material having a Young's modulus greater than that of the material forming the base. Thereby, compared with the case where a convex part consists of the same material as a base, it becomes possible to improve the abrasion resistance in the top surface which touches a board | substrate, and to suppress that a particle | grain generate | occur | produces from a top surface. .
そして、凸部は、根元部の断面積が頂部の断面積よりも大きいので、全体の断面積が同じ上記特許文献1に記載された凸部(突起部)と比較して、頂面の面積を同じとしても、凸部の高剛性化を図ることが可能となる。 And since the cross-sectional area of a convex part is larger than the cross-sectional area of a top part, compared with the convex part (projection part) described in the said patent document 1 with the same whole cross-sectional area, the convex part is the area of a top surface. Even if they are the same, it is possible to increase the rigidity of the convex portion.
さらに、各保持部材は互いに離間しているので、保持部材(被膜)が基台(基体)の表面全体に亘って形成されている上記特許文献2に記載された場合と比較して、保持部材の剥離やクラックなどの抑制を図ることが可能となる。 Furthermore, since each holding member is spaced apart from each other, the holding member (coating film) is formed over the entire surface of the base (base) as compared with the case described in Patent Document 2 above. It is possible to suppress peeling and cracking of the film.
これらにより、長期間に亘り基板を良好な平面度で保持することが図り得る。 As a result, the substrate can be held with good flatness over a long period of time.
本発明の基板保持部材において、前記複数の凸部は、前記基台の上面から延在する前記根元部を構成し、上端面を有する第1の凸部と、前記第1の凸部の上端面の一部の上に形成され、前記頂部を構成する第2の凸部とを備え、前記保持部材は、前記第2の凸部の少なくとも一部を構成していることが好ましい。 In the substrate holding member of the present invention, the plurality of convex portions constitutes the root portion extending from the upper surface of the base, and includes a first convex portion having an upper end surface, and an upper portion of the first convex portion. It is preferable that the second protrusion is formed on a part of the end surface and forms the top, and the holding member forms at least a part of the second protrusion.
この場合、第1の凸部が基台の上面から延在するので、第1の凸部と基台とを一体的に形成することが可能となる。これにより、第1の凸部と基台との密着性の向上を図ることができ、これらの間に剥離、クラックの発生などの破損が生じることの抑制を図ることが可能となる。 In this case, since the first convex portion extends from the upper surface of the base, the first convex portion and the base can be formed integrally. Thereby, the adhesiveness of a 1st convex part and a base can be improved, and it becomes possible to aim at suppression that breakage, such as peeling and generation | occurrence | production of a crack, arises among these.
また、本発明の基板保持部材において、前記保持部材は、前記第2の凸部及び少なくとも前記第1の凸部の前記上端面を含む上端頂部を構成していることが好ましい。 In the substrate holding member of the present invention, it is preferable that the holding member constitutes an upper end top portion including the second convex portion and at least the upper end surface of the first convex portion.
この場合、保持部材は第2の凸部と第1の凸部の上端頂部を構成しているので、これらを一体的に形成することが可能となる。これにより、第1の凸部と第2の凸部との密着性の向上を図ることができ、これらの間に剥離、クラックの発生などの破損が生じることの抑制を図ることが可能となる。 In this case, since the holding member constitutes the second convex portion and the upper end top portion of the first convex portion, it is possible to integrally form them. As a result, it is possible to improve the adhesion between the first convex portion and the second convex portion, and it is possible to suppress the occurrence of breakage such as peeling or generation of cracks between them. .
また、保持部材が第1の凸部の上端頂部を構成することにより、広い面積で保持部材と第1の凸部の下部とが密着する。そのため、両者間の密着性の向上を図ることができ、これらの間に剥離、クラックの発生などの破損が生じることの抑制を図ることが可能となる。 In addition, since the holding member constitutes the upper end top portion of the first convex portion, the holding member and the lower portion of the first convex portion are in close contact with each other over a wide area. Therefore, the adhesiveness between the two can be improved, and it is possible to suppress the occurrence of breakage such as peeling or cracking between them.
また、本発明の基板保持部材において、前記複数の凸部が前記基台から連続して形成され、且つ前記基台を形成する材質からなる部分を有し、前記基台を形成する材質からなる部分に凹部が形成されており、少なくとも前記凹部内に前記保持部材が形成されていることが好ましい。 Further, in the substrate holding member of the present invention, the plurality of convex portions are formed continuously from the base, and have a portion made of a material forming the base, and made of a material forming the base. It is preferable that a recess is formed in the portion, and that the holding member is formed at least in the recess.
この場合、凸部の基台を形成する材質からなる部分に凹部が形成されており、この凹部内に保持部材が形成されているので、凸部の基台を形成する材質からなる部分から保持部材が剥離することの抑制を図ることが可能となる。 In this case, since the concave portion is formed in the portion made of the material forming the base of the convex portion, and the holding member is formed in the concave portion, the concave portion is held from the portion made of the material forming the base of the convex portion. It is possible to suppress the peeling of the member.
また、本発明の基板保持部材において、前記保持部材は、前記複数の凸部の全体を構成することも好ましい。 In the substrate holding member of the present invention, it is preferable that the holding member constitutes the entirety of the plurality of convex portions.
この場合、保持部材は凸部の全体を構成するため、基台から連続する部分を凸部の一部として形成する必要がないので、これを形成する工程が不要となり、製造工程の簡略化を図ることが可能となる。 In this case, since the holding member constitutes the entire convex portion, it is not necessary to form a continuous portion from the base as a part of the convex portion, so that a process of forming this is unnecessary, and the manufacturing process is simplified. It becomes possible to plan.
さらに、本発明の基板保持部材において、前記基台の上面に凹部が形成され、前記保持部材は少なくとも前記凹部内に形成されていることが好ましい。 Furthermore, in the substrate holding member of the present invention, it is preferable that a recess is formed on the upper surface of the base, and the holding member is formed at least in the recess.
この場合、基台の上面に凹部が形成されており、この凹部内に保持部材が形成されているので、基台から保持部材が剥離することの抑制を図ることが可能となる。 In this case, since the concave portion is formed on the upper surface of the base, and the holding member is formed in the concave portion, it is possible to suppress the peeling of the holding member from the base.
本発明の第1の実施形態に係る基板保持部材1について図面を参照して説明する。 A substrate holding member 1 according to a first embodiment of the present invention will be described with reference to the drawings.
基板保持部材1は、図1の断面図に示すように、円盤状の基台10と、基台10の上面に形成され、頂面20aにおいて図示しないウェハ(基板)を保持する複数の凸部(突起部、ピン)20とを備えている。 As shown in the cross-sectional view of FIG. 1, the substrate holding member 1 is formed on a disk-like base 10 and a plurality of convex portions that are formed on the top surface of the base 10 and hold a wafer (substrate) (not shown) on the top surface 20a. (Protrusions, pins) 20.
基板保持部材1において、図2の部分拡大断面図に示すように、各凸部20は、基台10の上面から延在する根元部21と、根元部21の上に形成され頂面20aを含む頂部22とを有している。そして、凸部20は、基台10の上面に沿った水平方向(図2における左右方向)における根元部21の断面積S1が前記水平方向における頂部22の断面積S2より大きくなっている。 In the substrate holding member 1, as shown in the partial enlarged cross-sectional view of FIG. 2, each convex portion 20 includes a root portion 21 extending from the upper surface of the base 10 and a top surface 20 a formed on the root portion 21. And a top portion 22 including the same. And the convex part 20 has the cross-sectional area S1 of the root part 21 in the horizontal direction (left-right direction in FIG. 2) along the upper surface of the base 10 larger than the cross-sectional area S2 of the top part 22 in the said horizontal direction.
凸部20は、頂部22の頂面20aを含む少なくとも一部が、基台10を形成する材質と比較してヤング率が大きい材質から形成された保持部材30から構成されている。頂部22の頂面20aを含む少なくとも一部は、基台10を形成する材質と比較して気孔率が小さい(気孔が少ない)材質から構成されていることが好ましい。各保持部材30は互いに離間している。 The convex portion 20 includes a holding member 30 formed of a material having a Young's modulus larger than that of the material forming the base 10 at least partially including the top surface 20 a of the top portion 22. It is preferable that at least a part of the top portion 22 including the top surface 20a is made of a material having a smaller porosity (less pores) than the material forming the base 10. Each holding member 30 is separated from each other.
本実施形態では、凸部20は、円柱状の下部23と、下部23の上方に突出し、下部23よりも径が小さい円柱形状の上部24とからなる。下部23は、基台10の表面から突出して基台10と一体的に形成されており、基台10と材質が同じである。つまり、下部23は、基台10から連続して形成されている。 In the present embodiment, the convex portion 20 includes a cylindrical lower portion 23 and a cylindrical upper portion 24 that protrudes above the lower portion 23 and has a smaller diameter than the lower portion 23. The lower part 23 protrudes from the surface of the base 10 and is formed integrally with the base 10, and is made of the same material as the base 10. That is, the lower part 23 is formed continuously from the base 10.
上部24全体が保持部材30から構成されている。これにより、凸部20の根元部21は下部23の根元部(下端部)であり、凸部20の頂部22は上部24の頂部(上端部)となっている。 The entire upper portion 24 is constituted by the holding member 30. Thereby, the base part 21 of the convex part 20 is a base part (lower end part) of the lower part 23, and the top part 22 of the convex part 20 is a top part (upper end part) of the upper part 24.
そして、保持部材30の上端面である凸部20の頂面20aは平坦に形成されている。なお、下部23は本発明の第1の凸部に相当し、上部24は本発明の第2の凸部に相当する。 And the top surface 20a of the convex part 20 which is an upper end surface of the holding member 30 is formed flat. The lower portion 23 corresponds to the first convex portion of the present invention, and the upper portion 24 corresponds to the second convex portion of the present invention.
下部23の高さは、0.15〜0.35mmであることが好ましく、例えば0.25mmである。下部23の直径は、1.0〜1.5mmであることが好ましく、例えば1.25mmである。上部24の高さは、0.02〜0.06mmであることが好ましく、例えば0.02mmである。上部24の直径は、0.02〜0.2mmであることが好ましく、例えば0.02mmである。 The height of the lower portion 23 is preferably 0.15 to 0.35 mm, for example, 0.25 mm. The diameter of the lower portion 23 is preferably 1.0 to 1.5 mm, for example, 1.25 mm. The height of the upper portion 24 is preferably 0.02 to 0.06 mm, for example 0.02 mm. The diameter of the upper portion 24 is preferably 0.02 to 0.2 mm, for example, 0.02 mm.
なお、図1,2においては、基台10、凸部20、保持部材30などは、実際の形状及び寸法比を考慮せず誇張して描いている。従って、実際の形状及び寸法比とは必ずしも一致しない。後述する図4〜図8も同様である。 In FIGS. 1 and 2, the base 10, the convex portion 20, the holding member 30 and the like are exaggerated without considering the actual shape and dimensional ratio. Therefore, the actual shape and dimensional ratio do not always match. The same applies to FIGS. 4 to 8 described later.
また、下部23及び上部24は共に円柱状であると記載したが、製造方法などの要因によって、角部は曲面状となり、側面などにも凹凸が生じたり、側面が斜めになるなど、厳密な円柱状とはならない。 Moreover, although both the lower part 23 and the upper part 24 were described as being cylindrical, due to factors such as the manufacturing method, the corners are curved, the side surfaces are uneven, and the side surfaces are slanted. It will not be cylindrical.
基台10及び下部23の材質は、炭化珪素(SiC)、アルミナ(Al2O3)などが挙げられるが、静電気による回路破壊を防止するために導電性であり、かつ高剛性であることが好ましいため、炭化珪素(SiC)質焼結体であることが好ましい。基台10及び下部23の気孔は、パーティクル発塵などの原因ともなるため少ないほど好ましく、その気孔率は5%以下、より好ましくは2%以下である。 Examples of the material for the base 10 and the lower portion 23 include silicon carbide (SiC), alumina (Al2O3), etc., but it is preferable that the base 10 and the lower portion 23 are conductive and have high rigidity in order to prevent circuit breakdown due to static electricity. A silicon carbide (SiC) sintered body is preferred. The porosity of the base 10 and the lower part 23 is preferably as small as possible because it causes particle dusting, and the porosity is 5% or less, more preferably 2% or less.
強度の観点から基台10及び下部23の気孔径は小さい方が好ましく、基台10及び下部23の平均気孔径は1〜5μmである。平均気孔径は、走査型電子顕微鏡(SEM)を用いて基台10及び下部23を2000倍に拡大した断面を撮影し、得られた断面写真の任意の30μm四方の領域についてインターセプト法を用いて算出すればよい。 From the viewpoint of strength, the base 10 and the lower part 23 preferably have smaller pore diameters, and the base 10 and the lower part 23 have an average pore diameter of 1 to 5 μm. The average pore diameter was obtained by photographing a cross section obtained by enlarging the base 10 and the lower part 23 by a magnification of 2000 using a scanning electron microscope (SEM), and using an intercept method for an arbitrary 30 μm square region of the obtained cross-sectional photograph. What is necessary is just to calculate.
基台10及び下部23のヤング率(縦弾性係数)は400〜440GPa、より好ましくは420〜440GPaである。また、基台10及び下部23のビッカース硬さは、22〜26GPa(荷重0.5kgf)である。 The Young's modulus (longitudinal elastic modulus) of the base 10 and the lower part 23 is 400 to 440 GPa, more preferably 420 to 440 GPa. Moreover, the Vickers hardness of the base 10 and the lower part 23 is 22-26 GPa (load 0.5kgf).
保持部材30の材質は、炭化珪素(SiC)、アルミナ(Al2O3)などが挙げられるが、基台10及び下部23と主成分が同じ材質であることが好ましく、炭化珪素質であることが好ましい。保持部材30の気孔は、ウェハなどの基板と直接接触する部分を含むため更に少ない方が好ましい。保持部材30の気孔率は、基台10及び下部23の気孔率と比較して小さく、1%以下、より好ましくは0.5%以下である。保持部材30のヤング率は、基台10及び下部23のヤング率より大きく、450〜480GPa、より好ましくは460〜480GPaである。ここで、保持部材30、基台10及び下部23のヤング率はナノインデンテーション法を用いた試験方法であるISO 14577に準拠して測定することができる。また、保持部材30のビッカース硬さは、28〜31GPa(荷重0.5kgf)である。 Examples of the material of the holding member 30 include silicon carbide (SiC), alumina (Al 2 O 3), and the like. The main component is preferably the same material as the base 10 and the lower portion 23, and is preferably silicon carbide. Since the pores of the holding member 30 include a portion that is in direct contact with a substrate such as a wafer, the number of pores is preferably smaller. The porosity of the holding member 30 is smaller than the porosity of the base 10 and the lower part 23, and is 1% or less, more preferably 0.5% or less. The Young's modulus of the holding member 30 is larger than the Young's modulus of the base 10 and the lower part 23, and is 450-480 GPa, More preferably, it is 460-480 GPa. Here, the Young's modulus of the holding member 30, the base 10 and the lower part 23 can be measured in accordance with ISO 14577, which is a test method using the nanoindentation method. The holding member 30 has a Vickers hardness of 28 to 31 GPa (load 0.5 kgf).
基台10及び下部23の材質が炭化珪素質焼結体である場合、保持部材30は熱CVD(化学的気相成長)法により形成された炭化珪素質であることが好ましい。これは、熱CVD法によれば、保持部材30の気孔が非常に少なく、保持部材30の2000倍に拡大した断面のSEM観察において気孔は認められず、保持部材30の気孔率が実質的に0%となり、気孔率及びヤング率を前述した範囲内とすることが容易であり、かつ保持部材30の厚さを1mm程度に厚くすることが容易に可能であるからである。 When the material of the base 10 and the lower part 23 is a silicon carbide sintered body, it is preferable that the holding member 30 is a silicon carbide formed by a thermal CVD (chemical vapor deposition) method. This is because, according to the thermal CVD method, the holding member 30 has very few pores, and no pores are observed in the SEM observation of the cross section enlarged 2000 times that of the holding member 30, and the porosity of the holding member 30 is substantially reduced. This is because the porosity and Young's modulus can be easily set within the above-described ranges, and the thickness of the holding member 30 can be easily increased to about 1 mm.
図3は焼結助剤成分としてB4C及びCを添加したSiCを常圧焼結することで得られた下部23に、熱CVD法によりSiCからなる保持部材30を形成した部分の走査型電子顕微鏡(SEM)を用いた拡大断面写真である。下部23の炭化珪素質焼結体は、一定の気孔が分布しているのに対し、熱CVD法により形成されたSiCからなる保持部材30には気孔が認められず実質的に気孔率が0%であることが確認される。保持部材30、基台10及び下部23における気孔の数や気孔率の大小はSEMを用いた拡大断面写真の観察により評価することができる。 FIG. 3 shows a scanning electron microscope of a portion in which a holding member 30 made of SiC is formed by a thermal CVD method on a lower portion 23 obtained by atmospheric pressure sintering of SiC to which B4C and C are added as sintering aid components. It is an expanded sectional photograph using (SEM). The silicon carbide sintered body of the lower portion 23 has constant pores distributed, whereas the holding member 30 made of SiC formed by the thermal CVD method has no pores and the porosity is substantially zero. % Is confirmed. The number of pores and the size of the porosity in the holding member 30, the base 10, and the lower portion 23 can be evaluated by observing an enlarged cross-sectional photograph using an SEM.
なお、下部23及び上部24がそれぞれ円柱形状である場合について説明したが、凸部の根元部21の断面積S1が頂部22の断面積S2より大きくなっていれば、これに限定されない。例えば、下部23及び上部24がそれぞれ円錐台形状であってもよいし、下部23と上部24とが全体として1つの円錐台形状となっていてもよい。また、下部23及び上部24の形状は、上から下に向って広がるような形状のものであればよく、円柱状であるほかに、角柱、円錐台、角錐台などであってもよい。また、上部24又は下部23の少なくとも一方が複数の円柱形状、円錐台形状などを上下方向に積み重ねた形状であってもよい。 In addition, although the case where the lower part 23 and the upper part 24 were each cylindrical shape was demonstrated, if the cross-sectional area S1 of the root part 21 of a convex part is larger than the cross-sectional area S2 of the top part 22, it will not be limited to this. For example, the lower portion 23 and the upper portion 24 may each have a truncated cone shape, or the lower portion 23 and the upper portion 24 may have a single truncated cone shape as a whole. Moreover, the shape of the lower part 23 and the upper part 24 should just be a thing of the shape which spreads from the top to the bottom, and besides a cylinder shape, a prism, a truncated cone, a truncated pyramid etc. may be sufficient. Further, at least one of the upper part 24 or the lower part 23 may have a shape in which a plurality of columnar shapes, truncated cone shapes, and the like are stacked in the vertical direction.
基板保持部材1において、ウェハは複数の凸部20の各頂面20aに当接するように基板保持部材1により支持される。そして、例えば、図示しないが、基台10に形成された真空吸引用経路11に接続された図示しない真空ポンプ等の真空吸引装置により、基板保持部材1とウェハとにより画定される空間の空気が吸引されることにより、この吸引力によりウェハが基板保持部材1に吸着保持される。 In the substrate holding member 1, the wafer is supported by the substrate holding member 1 so as to come into contact with the top surfaces 20 a of the plurality of convex portions 20. Then, for example, although not shown, the air in the space defined by the substrate holding member 1 and the wafer is made by a vacuum suction device such as a vacuum pump (not shown) connected to the vacuum suction path 11 formed on the base 10. By being sucked, the wafer is sucked and held on the substrate holding member 1 by this suction force.
次に、基板保持部材1の製造方法について、図4を参照して説明する。 Next, the manufacturing method of the board | substrate holding member 1 is demonstrated with reference to FIG.
先ず、炭化珪素からなる略円盤状の成形体を作製し、この成形体を1900〜2100℃、Arガス雰囲気において焼結することにより略円盤状の炭化珪素質焼結体を作製する。なお、炭化珪素の粉末材料に、B4C、Cなどの炭素含有物を焼結助剤成分として添加してもよい。 First, a substantially disk-shaped molded body made of silicon carbide is manufactured, and this molded body is sintered in an Ar gas atmosphere at 1900 to 2100 ° C., thereby manufacturing a substantially disk-shaped silicon carbide sintered body. A carbon-containing material such as B4C or C may be added as a sintering aid component to the silicon carbide powder material.
次いで、炭化珪素質焼結体の上側表面に対して研削加工、ブラスト加工、放電加工、砥石加工、レーザビーム等の高エネルギービーム照射加工などを施すことにより複数の凸部20のうち下部23を形成する。 Next, the lower surface 23 of the plurality of convex portions 20 is formed by subjecting the upper surface of the silicon carbide sintered body to grinding, blasting, electric discharge machining, grinding wheel machining, high energy beam irradiation machining such as laser beam, and the like. Form.
さらに、例えば、炭化珪素からなる保持層40を、熱CVD法、プラズマCVD法、イオンプレーティング法などによって基台10の上側表面を下部23の表面を含めて全面に亘って覆うように形成する。保持層40の形成は、熱CVD法によることが好ましいが、保持層40の気孔率及びヤング率を前述した保持部材30の範囲内とすることが可能であれば、プラズマCVD法、イオンプレーティング法などの方法により行ってもよい。このようにして形成された保持層40は、基台10の上側表面及び下部23の表面の全面を覆う状態となっている。 Further, for example, the holding layer 40 made of silicon carbide is formed so as to cover the entire upper surface of the base 10 including the surface of the lower portion 23 by a thermal CVD method, a plasma CVD method, an ion plating method, or the like. . The formation of the holding layer 40 is preferably performed by a thermal CVD method, but if the porosity and Young's modulus of the holding layer 40 can be within the range of the holding member 30 described above, the plasma CVD method, ion plating may be used. You may carry out by methods, such as a method. The holding layer 40 thus formed covers the entire upper surface of the base 10 and the entire surface of the lower portion 23.
次いで、上部24となる部分の領域を覆うようにマスクMを設置し、このマスクMで覆った領域を除いた領域に対してブラスト加工などを行うことにより、保持層40を除去する。なお、研削加工、放電加工、砥石加工、レーザビーム等の高エネルギービーム照射加工などにより保持層40を除去してもよい。これにより、上部24になる部分に保持層40が残存し、保持部材30が形成される。さらに、少なくとも凸部20の頂面が平坦になるように保持部材30の頂面に対して研磨加工を施す。 Next, a mask M is provided so as to cover the region of the portion to be the upper portion 24, and the holding layer 40 is removed by performing blasting or the like on the region excluding the region covered with the mask M. Note that the holding layer 40 may be removed by grinding, electric discharge machining, grindstone machining, high energy beam irradiation machining such as laser beam, or the like. As a result, the holding layer 40 remains in the portion that becomes the upper portion 24, and the holding member 30 is formed. Further, the top surface of the holding member 30 is polished so that at least the top surface of the convex portion 20 is flat.
以上に説明した基板保持部材1によれば、ウェハと接する頂面20aを含む凸部20の少なくとも一部が、基台10を形成する材質と比較して気孔率が小さく(気孔が少なく)且つヤング率が大きい材質から形成された保持部材30からなる。これにより、凸部20が基台10と同じ材質からなる場合と比較して、ウェハと接する頂面20aでの耐摩耗性が向上し、かつ頂面20aからパーティクルが発生することを抑制することが可能となる。 According to the substrate holding member 1 described above, at least a part of the convex portion 20 including the top surface 20a in contact with the wafer has a smaller porosity (less pores) than the material forming the base 10 and The holding member 30 is made of a material having a high Young's modulus. Thereby, compared with the case where the convex part 20 consists of the same material as the base 10, the abrasion resistance in the top surface 20a which contact | connects a wafer improves, and it suppresses generation | occurrence | production of a particle from the top surface 20a. Is possible.
そして、凸部20は、根元部21の断面積S1が頂部22の断面積S2よりも大きいので、全体の断面積が同じ上記特許文献1に記載された細長い円柱状の凸部(突起)と比較して、頂面20aの面積を同じとしても、凸部20の高剛性化を図ることが可能となる。 And since the convex part 20 has the cross-sectional area S1 of the base part 21 larger than the cross-sectional area S2 of the top part 22, the whole cross-sectional area is the elongate cylindrical convex part (protrusion) described in the said patent document 1 and the same. In comparison, even if the area of the top surface 20a is the same, the rigidity of the convex portion 20 can be increased.
さらに、各保持部材30は互いに離間しているので、保持部材(被膜)が基台(基体)の表面全体に亘って形成されている上記特許文献2に記載された場合と比較して、保持部材30の剥離やクラックなどの抑制を図ることが可能となる。 Furthermore, since each holding member 30 is separated from each other, the holding member (coating film) is held as compared with the case described in Patent Document 2 in which the entire surface of the base (base) is formed. It becomes possible to suppress peeling and cracking of the member 30.
これらにより、長期間に亘りウェハを良好な平面度で保持することが図り得る。 As a result, the wafer can be held with good flatness for a long period of time.
さらに、下部23が基台10の上面から延在するので、下部23と基台10とを一体的に形成することが可能となる。これにより、下部23と基台10との密着性の向上を図ることができ、これらの間に剥離、クラックの発生などの破損が生じることの抑制を図ることが可能となる。 Furthermore, since the lower part 23 extends from the upper surface of the base 10, the lower part 23 and the base 10 can be integrally formed. Thereby, the adhesiveness of the lower part 23 and the base 10 can be improved, and it is possible to suppress the occurrence of breakage such as peeling or cracking between them.
次に、本発明の第2の実施形態に係る基板保持部材1Aについて図面を参照して説明する。この基板保持部材1Aは、図5に示すように、上述した基板保持部材1と比較して、下部23Aの上面に形成された凹部23Aa内にも保持部材30Aが形成されていることのみが相違する。 Next, a substrate holding member 1A according to a second embodiment of the present invention will be described with reference to the drawings. As shown in FIG. 5, the substrate holding member 1A is different from the substrate holding member 1 described above only in that the holding member 30A is also formed in the recess 23Aa formed on the upper surface of the lower portion 23A. To do.
これにより、保持部材30Aは、下部23Aの凹部23Aa内に形成された部分と上部24の全部とを一体化した形状に形成されている。凹部23Aaの縦方向の断面形状は、半円状、半楕円状、矩形状など特に限定されず、開口と比較して内方が側部に拡大した形状であってもよい。凹部23Aaは、深さが0.01〜0.2mm、開口部の幅が0.02〜0.2mmであることが好ましい。 Accordingly, the holding member 30A is formed in a shape in which the portion formed in the recess 23Aa of the lower portion 23A and the entire upper portion 24 are integrated. The cross-sectional shape in the vertical direction of the recess 23Aa is not particularly limited, such as a semicircular shape, a semi-elliptical shape, and a rectangular shape, and may be a shape whose inner side is enlarged toward the side as compared with the opening. The recess 23Aa preferably has a depth of 0.01 to 0.2 mm and an opening width of 0.02 to 0.2 mm.
このような保持部材30Aは、下部23Aを形成したときに、研削加工、ブラスト加工、放電加工、砥石加工、高エネルギービーム照射などを施すことにより下部23Aの上面に凹部23Aaを形成し、この状態で保持層40を形成するように形成すればよい。 When such a holding member 30A is formed, the recess 23Aa is formed on the upper surface of the lower portion 23A by performing grinding, blasting, electric discharge machining, grinding wheel processing, high energy beam irradiation, etc. when the lower portion 23A is formed. In this case, the holding layer 40 may be formed.
以上に説明した基板保持部材1Aによれば、上述した基板保持部材1と同様に、長期間に亘るウェハの平面度の良好な維持を図ることが可能となる。 According to the substrate holding member 1 </ b> A described above, it is possible to maintain good flatness of the wafer over a long period of time as in the case of the substrate holding member 1 described above.
さらに、凸部20Aの基台10Aを形成する材質からなる下部23Aの上面に凹部23Aaが形成されており、この凹部23Aa内に保持部材30Aが形成されているので、下部23Aから保持部材30Aが剥離することの抑制を図ることが可能となる。 Further, a recess 23Aa is formed on the upper surface of the lower part 23A made of a material forming the base 10A of the convex part 20A, and the holding member 30A is formed in the recess 23Aa. It is possible to suppress peeling.
次に、本発明の第3の実施形態に係る基板保持部材1Bについて図面を参照して説明する。この基板保持部材1Bは、図6に示すように、上述した基板保持部材1と比較して、下部23Bの上部が保持部材30Bの一部を構成する上部24Bと同一の素材から構成さ
れていることのみが相違する。
Next, a substrate holding member 1B according to a third embodiment of the present invention will be described with reference to the drawings. As shown in FIG. 6, the substrate holding member 1B is made of the same material as the upper portion 24B in which the upper portion of the lower portion 23B constitutes a part of the holding member 30B, as compared with the substrate holding member 1 described above. The only difference is that.
これにより、保持部材30Bは、下部23Bの上部と上部24Bの全部とを一体化した形状に形成されている。下部23Aの下部は、基台10から連続して形成されている。保持部材30Bの下部23Bの上部における厚さは、0.01〜0.2mmであることが好ましい。 Thereby, the holding member 30B is formed in a shape in which the upper portion of the lower portion 23B and the entire upper portion 24B are integrated. The lower part of the lower part 23 </ b> A is formed continuously from the base 10. The thickness of the upper portion of the lower portion 23B of the holding member 30B is preferably 0.01 to 0.2 mm.
以上に説明した基板保持部材1Bによれば、上述した基板保持部材1と同様に、長期間に亘りウェハを良好な平面度で保持することが図り得る。 According to the substrate holding member 1B described above, similarly to the substrate holding member 1 described above, the wafer can be held with good flatness for a long period of time.
さらに、保持部材30Bは上部24Bと下部23Bの上端頂部を構成しているので、これらを一体的に形成することが可能となる。これにより、下部23Bと上部24Bとの密着性の向上を図ることができ、これらの間に剥離、クラックの発生などの破損が生じることの抑制を図ることが可能となる。 Furthermore, since the holding member 30B constitutes the upper end top portions of the upper portion 24B and the lower portion 23B, these can be formed integrally. Thereby, the adhesiveness of the lower part 23B and the upper part 24B can be improved, and it is possible to suppress the occurrence of breakage such as peeling or generation of cracks therebetween.
また、保持部材30Bが下部23Bの上端頂部を構成することにより、上部24Bの断面よりも広い面積で保持部材30Bと下部23Bの下部とが密着する。そのため、両者間の密着性の向上を図ることができ、これらの間に剥離、クラックの発生などの破損が生じることの抑制を図ることが可能となる。 Further, since the holding member 30B constitutes the upper end top portion of the lower portion 23B, the holding member 30B and the lower portion of the lower portion 23B are in close contact with each other in an area wider than the cross section of the upper portion 24B. Therefore, the adhesiveness between the two can be improved, and it is possible to suppress the occurrence of breakage such as peeling or cracking between them.
次に、本発明の第4の実施形態に係る基板保持部材1Cについて図面を参照して説明する。 Next, a substrate holding member 1C according to a fourth embodiment of the present invention will be described with reference to the drawings.
この基板保持部材1Cは、図7に示すように、上述した基板保持部材1と比較して、凸部20C全体が保持部材30Cから構成されていることが相違する。そして、この凸部20Cは、凸部20とは異なり、全体として円錐台形状となっている。また、凸部20Cの形状は、上から下に向って広がるような形状のものであればよく、円錐台状であるほかに、角錐台、側面が外方に向って凸又は凹となった曲面を有する円錐台類似の形状であってもよい。 As shown in FIG. 7, the substrate holding member 1 </ b> C is different from the substrate holding member 1 described above in that the entire convex portion 20 </ b> C is configured by a holding member 30 </ b> C. And this convex part 20C differs from the convex part 20, and has a truncated cone shape as a whole. Moreover, the shape of the convex part 20C should just be a thing of the shape which spreads from the top to the bottom, and besides a truncated cone shape, a truncated pyramid, the side surface became convex or concave outward. The shape may be similar to a truncated cone having a curved surface.
凸部20Cの高さは、0.15〜0.35mmであることが好ましく、例えば0.25mmである。凸部20Cの根元部21Cの直径は、0.2〜1.5mmであることが好ましく、例えば0.25mmである。凸部20Cの頂部22Cの直径は、0.02〜0.2mmであることが好ましく、例えば0.05mmである。 The height of the convex portion 20C is preferably 0.15 to 0.35 mm, for example, 0.25 mm. The diameter of the base portion 21C of the convex portion 20C is preferably 0.2 to 1.5 mm, for example, 0.25 mm. The diameter of the top portion 22C of the convex portion 20C is preferably 0.02 to 0.2 mm, for example 0.05 mm.
このような、保持部材30Cは、上述した基板保持部材1を製造するときのように下部23を形成する必要がないので、下部を形成する工程が不要となり、製造工程の簡略化を図ることが可能となる。 Since the holding member 30C does not need to form the lower portion 23 as in the case of manufacturing the substrate holding member 1 described above, the step of forming the lower portion is not necessary, and the manufacturing process can be simplified. It becomes possible.
なお、円錐台形状の保持部材30Cは、基台10Cの上側表面の全面に亘って覆うように保持層40を形成し、保持部材30Cとなる部分以外の保持層40を除去して形成すればよい。保持層40の除去は、加工に気流を伴わないレーザビーム加工により行うことが特に好適である。ブラスト加工のような紛体の流れを伴う加工では円錐台形状をなす保持部材30Cの下部と基台10Cとの間に曲面が形成されてしまう。しかしながら、レーザビーム加工ではこのような曲面の形成を抑制することができる。 Note that the truncated conical holding member 30C is formed by forming the holding layer 40 so as to cover the entire upper surface of the base 10C and removing the holding layer 40 other than the portion to be the holding member 30C. Good. The removal of the holding layer 40 is particularly preferably performed by laser beam processing that does not involve an air flow during processing. In processing involving the flow of powder such as blast processing, a curved surface is formed between the lower portion of the holding member 30C having a truncated cone shape and the base 10C. However, laser beam processing can suppress the formation of such a curved surface.
以上に説明した基板保持部材1Cによれば、上述した基板保持部材1と同様に、長期間に亘りウェハを良好な平面度で保持することが図り得る。 According to the substrate holding member 1 </ b> C described above, similarly to the substrate holding member 1 described above, it is possible to hold the wafer with good flatness for a long period of time.
次に、本発明の第5の実施形態に係る基板保持部材1Dについて図面を参照して説明す
る。
Next, a substrate holding member 1D according to a fifth embodiment of the present invention will be described with reference to the drawings.
この基板保持部材1Dは、図8に示すように、上述した基板保持部材1Cと比較して、基台10Dの上面に形成された凹部10Da内にも保持部材30Dが形成されていることのみが相違する。 As shown in FIG. 8, the substrate holding member 1 </ b> D only has a holding member 30 </ b> D formed in the recess 10 </ b> Da formed on the upper surface of the base 10 </ b> D as compared with the substrate holding member 1 </ b> C described above. Is different.
これにより、保持部材30Dは、基台10Dの凹部10Da内に形成された部分と凸部20Dとを一体化した形状に構成されている。凹部10DAaの縦方向断面形状は、半円状、半楕円状、矩形状など特に限定されず、開口と比較して内方が側部に拡大した形状であってもよい。凹部10Daは、深さが0.01〜0.2mm、開口部の幅が0.02〜0.2mmであることが好ましい。 Thereby, holding member 30D is comprised in the shape which integrated the part formed in recessed part 10Da of base 10D, and convex part 20D. The longitudinal cross-sectional shape of the recess 10DAa is not particularly limited, such as a semicircular shape, a semi-elliptical shape, and a rectangular shape, and may be a shape whose inner side is enlarged to the side as compared with the opening. The recess 10Da preferably has a depth of 0.01 to 0.2 mm and an opening width of 0.02 to 0.2 mm.
このような凹部10Daは、上面が平坦な基台10を形成した後に、研削加工、サンドブラスト加工、放電加工、砥石加工、レーザビーム等の高エネルギービーム照射加工などを施すことにより基台10Dの上面に凹部10Daを形成すればよい。 Such a recess 10Da is formed on the upper surface of the base 10D by forming a base 10 having a flat upper surface and then performing grinding, sandblasting, electric discharge processing, grinding wheel processing, high energy beam irradiation processing such as laser beam, or the like. A recess 10Da may be formed on the surface.
以上に説明した基板保持部材1Dによれば、上述した基板保持部材1と同様に、長期間に亘りウェハを良好な平面度で保持することが図り得る。 According to the substrate holding member 1D described above, similarly to the substrate holding member 1 described above, it is possible to hold the wafer with good flatness for a long period of time.
さらに、基台10Dの上面に形成された凹部10Da内に保持部材30Dが形成されているので、基台10Dから保持部材30Dが剥離することの抑制を図ることが可能となる。 Furthermore, since the holding member 30D is formed in the recess 10Da formed on the upper surface of the base 10D, it is possible to suppress the peeling of the holding member 30D from the base 10D.
1,1A,1B,1C,1D…基板保持部材、 10,10A,10B,10C,10D…基台、 10Da…凹部 、11…真空吸引用経路、 20,20A,20B,20C,20D…凸部、 20a,20Aa,20Ba,20Ca,20Da…頂面、 21,21A,21B,21C,21D…根元部、 22,22A,22B,22C,22D…頂部、 23,23A,23B…下部(第1の凸部)、 23Aa…凹部、 24,24A,24B…上部(第2の凸部)、 30,30A,30B,30C,30D…保持部材、 40…保持層、 M…マスク。 1, 1A, 1B, 1C, 1D ... Substrate holding member, 10, 10A, 10B, 10C, 10D ... Base, 10Da ... Recess, 11 ... Vacuum suction path, 20, 20A, 20B, 20C, 20D ... Projection 20a, 20Aa, 20Ba, 20Ca, 20Da ... top surface, 21, 21A, 21B, 21C, 21D ... root part, 22, 22A, 22B, 22C, 22D ... top part, 23, 23A, 23B ... lower part (first Convex part), 23Aa ... concave part, 24, 24A, 24B ... upper part (second convex part), 30, 30A, 30B, 30C, 30D ... holding member, 40 ... holding layer, M ... mask.
Claims (6)
前記複数の凸部は、前記基台の上面から延在する根元部と前記根元部の上に形成され前記頂面を含む頂部とを有し、
前記複数の凸部は、前記基台の上面に沿った水平方向における前記根元部の断面積が前記水平方向における前記頂部の断面積よりも大きく、
前記複数の凸部は、前記頂部の頂面を含む少なくとも一部が、前記基台を形成する材質と比較してヤング率が大きい材質から形成された保持部材からなり、
前記複数の凸部を構成する各前記保持部材は互いに離間していることを特徴とする基板保持部材。 A substrate holding member comprising a base and a plurality of convex portions formed on the top surface of the base and holding the substrate on the top surface,
The plurality of convex portions have a root portion extending from an upper surface of the base and a top portion formed on the root portion and including the top surface,
The plurality of convex portions have a cross-sectional area of the root portion in the horizontal direction along the upper surface of the base larger than a cross-sectional area of the top portion in the horizontal direction,
The plurality of convex portions are formed of a holding member formed of a material having a Young's modulus that is at least partially including a top surface of the top portion as compared with a material forming the base.
The substrate holding member, wherein the holding members constituting the plurality of convex portions are separated from each other.
前記保持部材は、前記第2の凸部の少なくとも一部を構成していることを特徴とする請求項1に記載の基板保持部材。 The plurality of convex portions constitute the base portion extending from the upper surface of the base, and are formed on a first convex portion having an upper end surface and a part of the upper end surface of the first convex portion. And a second convex part constituting the top part,
The substrate holding member according to claim 1, wherein the holding member constitutes at least a part of the second convex portion.
前記基台を形成する材質からなる部分に凹部が形成されており、少なくとも前記凹部内に前記保持部材が形成されていることを特徴とする請求項1から3の何れか1項に記載の基板保持部材。 The plurality of convex portions are formed continuously from the base and have a portion made of a material forming the base;
The substrate according to any one of claims 1 to 3, wherein a concave portion is formed in a portion made of a material forming the base, and the holding member is formed at least in the concave portion. Holding member.
前記保持部材は少なくとも前記凹部内に形成されていることを特徴とする請求項5に記載の基板保持部材。 A recess is formed on the upper surface of the base,
The substrate holding member according to claim 5, wherein the holding member is formed at least in the recess.
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| KR1020180070320A KR102206687B1 (en) | 2017-06-26 | 2018-06-19 | Substrate holding member |
| US16/013,340 US11101161B2 (en) | 2017-06-26 | 2018-06-20 | Substrate holding member |
| TW107121428A TWI720323B (en) | 2017-06-26 | 2018-06-22 | Substrate holding member |
| CN201810670588.XA CN109119372B (en) | 2017-06-26 | 2018-06-26 | Substrate holding member |
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| TWI720323B (en) | 2021-03-01 |
| TW201906068A (en) | 2019-02-01 |
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