JP2019062034A - Die bonding device and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a die bonding apparatus with less deformation of a substrate. SOLUTION: A die bonding apparatus has a bonding lane for transporting a substrate having a package area arranged in an array in a first direction from a substrate supply unit to a substrate unloading unit, and a heating device for heating the substrate. It includes a stage, a bonding head that bonds a die to the substrate transported on the bonding stage, and a control unit that controls the transport lane, the bonding stage, and the bonding head. The control unit positions the entire plurality of package areas of the substrate on or above the bonding stage during the bonding of one substrate. [Selection diagram] FIG. 9

Description

  The present disclosure relates to a die bonding apparatus, and is applicable to, for example, a die bonder including a heating device.

  In the process of assembling a package, there is a process of mounting a semiconductor chip (hereinafter, simply referred to as a die) on a wiring substrate, lead frame or the like (hereinafter, simply referred to as a substrate) Partly, there are a step of dividing a die from a semiconductor wafer (hereinafter simply referred to as a wafer) (dicing step) and a bonding step of mounting the divided die on a substrate. The semiconductor manufacturing apparatus used in the bonding process is a die bonding apparatus such as a die bonder.

  The die bonder is a device for bonding (mounting and bonding) a die on a substrate or an already bonded die using solder, gold plating, and a resin as a bonding material. In a die bonder for bonding a die to, for example, the surface of a substrate, the die is adsorbed and picked up from the wafer using a suction nozzle called a collet, transported onto the substrate, applied with a pressing force, and heating the bonding material. As a result, the operation (work) of bonding is performed repeatedly. The collet is a holder that has suction holes, sucks air, and holds the die by suction, and has the same size as the die.

  Bonding may be performed by transferring a substrate onto a bonding stage in which a heating device is built (for example, Patent Document 1).

JP, 2016-197630, A

If at least one of the lengths before and after the bonding stage with respect to the attachment point is shorter than the length of the substrate, when the bonding stage heats the substrate during bonding, a region where the bonding stage is below the substrate and the bonding stage There is a region where there is no space, there may be a difference in temperature distribution within one substrate, and the substrate may be deformed.
An object of the present disclosure is to provide a die bonding apparatus with reduced substrate deformation.
Other problems and novel features will be apparent from the description of the present specification and the accompanying drawings.

The outline of typical ones of the present disclosure will be briefly described as follows.
That is, the die bonding apparatus includes a transfer lane for transferring a substrate having a plurality of package areas in a first direction from the substrate supply unit toward the substrate discharge unit, a bonding stage having a heating device for heating the substrate, and the bonding stage. And a control unit configured to control the transfer lane, the bonding stage, and the bonding head. The control unit positions all of the plurality of package areas of the substrate above or above the bonding stage during bonding of one substrate.

  According to the above-mentioned die bonding apparatus, substrate deformation can be reduced.

Schematic top view showing a configuration example of a die bonder A diagram for explaining a schematic configuration when viewed from the direction of arrow A in FIG. An external perspective view showing the configuration of the die supply unit of FIG. 1 FIG. 2 is a schematic cross sectional view showing the main part of the die supply unit of FIG. A block diagram showing a schematic configuration of a control system of the die bonder of FIG. 1 Diagram explaining how to heat the substrate The figure which explains the heating method of the baseplate which relates to relative example A diagram for explaining the problem of substrate heating according to a comparative example The figure explaining the bonding stage concerning an example The figure explaining the heating method of the substrate by the bonding stage concerning an example Diagram explaining the influence on positioning when the substrate expands due to heating Flow chart showing a method of manufacturing a semiconductor device The figure explaining the bonding stage concerning modification 1 A figure explaining a heating method of a substrate by a bonding stage concerning modification 1 The figure which shows the optical system of the bonding stage vicinity which concerns on modification 2 The figure explaining the bonding stage concerning modification 3 The figure explaining the bonding stage concerning modification 4 The figure explaining the bonding stage concerning modification 5 The figure explaining the bonding stage concerning modification 6

  Hereinafter, Examples, Comparative Examples, and Modifications will be described using the drawings. However, in the following description, the same components may be assigned the same reference numerals and repeated descriptions may be omitted. Note that the drawings may be schematically represented as to the width, thickness, shape, etc. of each portion in comparison with the actual embodiment in order to clarify the description, but this is merely an example, and the interpretation of the present invention is not limited. It is not limited.

  FIG. 1 is a top view schematically showing a die bonder according to an embodiment. FIG. 2 is a view for explaining the operation of the pickup head and the bonding head when viewed from the direction of arrow A in FIG.

  The die bonder 10 is roughly divided into a supply unit 1 for supplying a die D to be mounted on a substrate S on which a product area (hereinafter referred to as a package area P) to be one or a plurality of final one packages is printed. The intermediate stage unit 3, the bonding unit 4, the transport unit 5, the substrate supply unit 6, the substrate output unit 7, and the control unit 8 that monitors and controls the operation of each unit. The Y-axis direction is the front-rear direction of the die bonder 10, and the X-axis direction is the left-right direction. The die supply unit 1 is disposed on the front side of the die bonder 10, and the bonding unit 4 is disposed on the back side.

  First, the die supply unit 1 supplies a die D to be mounted on the package area P of the substrate S. The die supply unit 1 has a wafer holder 12 for holding the wafer 11 and a push-up unit 13 shown by a dotted line for pushing up the die D from the wafer 11. The die supply unit 1 is moved in the X and Y directions by drive means (not shown) to move the die D to be picked up to the position of the push-up unit 13.

  The pickup unit 2 includes a pickup head 21 for picking up the die D, a Y driving unit 23 for the pickup head for moving the pickup head 21 in the Y direction, and driving units (not shown) for moving the collet 22 up and down and rotating it in the X direction. And. The pickup head 21 has a collet 22 (see also FIG. 2) for attracting and holding the pushed up die D at its tip, picks up the die D from the die supply unit 1 and places it on the intermediate stage 31. The pickup head 21 has respective driving units (not shown) for moving the collet 22 up and down, rotating and moving in the X direction.

  The intermediate stage unit 3 has an intermediate stage 31 for temporarily mounting the die D, and a stage recognition camera 32 for recognizing the die D on the intermediate stage 31.

The bonding unit 4 picks up the die D from the intermediate stage 31 and bonds it onto the package area P of the substrate S transported onto the bonding stage BS or a die already bonded onto the package area P of the substrate S. Bonding in the form of laminating on top of the The bonding unit 4 includes a bonding head 41 having a collet 42 (see also FIG. 2) that holds the die D by suction like the pickup head 21, a Y drive unit 43 that moves the bonding head 41 in the Y direction, and a substrate A position recognition mark (not shown) of the package area P of S is imaged, and a substrate recognition camera 44 which recognizes a bonding position is provided.
With such a configuration, the bonding head 41 corrects the pickup position and attitude based on the imaging data of the stage recognition camera 32, picks up the die D from the intermediate stage 31, and the substrate based on the imaging data of the substrate recognition camera 44. Bond a die D to S.

The transport unit 5 includes a substrate transport claw 51 that grips and transports the substrate S, and a transport lane 52 in which the substrate S moves. The substrate S is moved in the X direction by driving a nut (not shown) of the substrate conveyance claw 51 provided in the conveyance lane 52 with a ball screw (not shown) provided along the conveyance lane 52.
With such a configuration, the substrate S moves from the substrate supply unit 6 to the bonding position along the transport lane 52, moves to the substrate unloading unit 7 after bonding, and delivers the substrate S to the substrate unloading unit 7.

  The control unit 8 includes a memory for storing a program (software) for monitoring and controlling the operation of each unit of the die bonder 10, and a central processing unit (CPU) for executing the program stored in the memory.

  Next, the configuration of the die supply unit 1 will be described with reference to FIGS. FIG. 3 is an external perspective view of the die supply unit. FIG. 4 is a schematic cross-sectional view showing the main part of the die supply unit.

  The die supply unit 1 includes a wafer holder 12 which moves in the horizontal direction (XY direction), and a push-up unit 13 which moves in the vertical direction. The wafer holder 12 has an expand ring 15 for holding the wafer ring 14 and a support ring 17 for horizontally positioning the dicing tape 16 held by the wafer ring 14 and to which a plurality of dies D are bonded. The push-up unit 13 is disposed inside the support ring 17.

  The die supply unit 1 lowers the expand ring 15 holding the wafer ring 14 when the die D is pushed up. As a result, the dicing tape 16 held by the wafer ring 14 is stretched and the distance between the dies D increases, and the push-up unit 13 pushes up the die D from below the die D to improve the pick-up performance of the die D. The adhesive that bonds the die to the substrate changes from liquid to film, and a film-like adhesive material called die attach film (DAF) 18 is attached between the wafer 11 and the dicing tape 16. There is. In a wafer 11 having a die attach film 18, dicing is performed on the wafer 11 and the die attach film 18. Therefore, in the peeling step, the wafer 11 and the die attach film 18 are peeled from the dicing tape 16. The die attach film 18 is cured by heating.

  The die bonder 10 includes a wafer recognition camera 24 for recognizing the attitude of the die D on the wafer 11, a stage recognition camera 32 for recognizing the attitude of the die D mounted on the intermediate stage 31, and a mounting position on the bonding stage BS. And a substrate recognition camera 44 for recognition. It is the stage recognition camera 32 involved in picking up by the bonding head 41 and the substrate recognition camera 44 involved in bonding to the mounting position by the bonding head 41 that must be corrected for posture deviation between recognition cameras.

  The control unit 8 will be described with reference to FIG. FIG. 5 is a block diagram showing a schematic configuration of a control system. The control system 80 includes a control unit 8, a drive unit 86, a signal unit 87, and an optical system 88. The control unit 8 roughly includes a control / arithmetic unit 81 mainly composed of a CPU (Central Processor Unit), a storage unit 82, an input / output unit 83, a bus line 84, and a power supply unit 85. The storage unit 82 is a main storage unit 82a configured by a RAM that stores processing programs and the like, and an auxiliary storage unit 82b configured by an HDD that stores control data and image data and the like necessary for control. And. The input / output device 83 is a monitor 83a for displaying device status, information, etc., a touch panel 83b for inputting an instruction of the operator, a mouse 83c for operating the monitor, and an image capturing device 83d for capturing image data from the optical system 88. And. Also, the input / output device 83 includes a motor control device 83e that controls a drive unit 86 such as an XY table (not shown) of the die supply unit 1 and a ZY drive shaft of a bonding head table, various sensor signals, lighting devices, etc. And an I / O signal control device 83f for taking in or controlling a signal from a signal unit 87 such as a switch of The optical system 88 includes a wafer recognition camera 24, a stage recognition camera 32, and a substrate recognition camera 44. The control / arithmetic unit 81 takes in necessary data via the bus line 84, calculates it, controls the pickup head 21 etc., and sends information to the monitor 83a etc.

  The control unit 8 stores the image data captured by the wafer recognition camera 24, the stage recognition camera 32 and the substrate recognition camera 44 in the storage device 82 via the image capturing device 83 d. Positioning of the package area P of the die D and the substrate S and surface inspection of the die D and the substrate S are performed using the control / arithmetic unit 81 by software programmed based on the stored image data. Based on the position of the package area P of the die D and the substrate S calculated by the control / calculation unit 81, the drive unit 86 is moved by the software via the motor control unit 83e. By this process, the die on the wafer is positioned and operated by the pickup unit 2 and the drive unit of the bonding unit 4 to bond the die D onto the package area P of the substrate S. The wafer recognition camera 24, the stage recognition camera 32, and the substrate recognition camera 44 to be used are gray scale, color, etc., and digitize the light intensity.

  The heat system of the bonding stage will be described with reference to FIG. FIG. 6 is a block diagram showing a system for heating and controlling the temperature of the bonding stage. Electric power is supplied from the heater power supply 85a in the control unit 8 to the heater (heating device) 45 through the solid state relay (SSR) 83h included in the input / output device 83, and the heater 45 incorporated in the bonding stage BS is a bonding The stage BS is heated. When the die attach film 18 is used, it is heated to a high temperature of, for example, about 80 to 160 ° C. A temperature sensor 87a such as a thermocouple constantly measures the temperature of the bonding stage BS, and sends the value to a temperature controller (controller) 83g included in the input / output device 83. When the temperature sensor 87a detects that the temperature of the bonding stage BS is higher than the temperature previously set in the temperature controller 83g by the control / arithmetic unit 81, the temperature controller 83g turns on / off the solid state relay (SSR) 83h. The OFF is controlled to stop heating the heater 45 once. The bonding stage BS is cooled by heat radiation, but the cooling method may be water cooling, air cooling, or using a Peltier element in addition to heat radiation. When the temperature falls below the set temperature by cooling, the temperature regulator 83g turns on the solid state relay (SSR) 83h again, and the heater 45 resumes heating. The temperature controller 83 g takes into consideration the thermal transient, predicts the reaching of the set temperature, adjusts the output according to a pre-programmed process, and controls to prevent the temperature overshoot.

Comparative Example
Here, a method of heating a substrate by a bonding stage (heat stage) capable of heating according to a technique (comparative example) examined by the present inventors prior to the present invention will be described with reference to FIGS. FIG. 7 is a view showing a method of heating a substrate according to a comparative example, FIG. 7 (A) is a top view of a state before the substrate is transferred to the bonding stage, and FIG. 7 (B) is a view of FIG. 7 (C) is a top view of a state in which the substrate is transported to the attachment point, and FIG. 7 (D) is a side view of the state of FIG. 7 (C). FIG. 7E is a side view of the state where the bonding stage is lifted at the position of the substrate in FIG. 7 (C). FIG. 8 is a view for explaining the problem of heating the substrate according to the comparative example, FIG. 8 (A) is a top view of a state in which bonding to the substrate is completed, and FIG. 8 (B) is a view of FIG. It is a side view of a state, and Drawing 8 (C) is a mimetic diagram explaining substrate change of the state of Drawing 8 (A).

  As shown in FIG. 7A, the bonding stage BSR has a length (stage length) of Lbsr and a width of W, and a metal with good thermal conductivity covering between the two transfer lanes 52 (shoot width) ( And copper). The substrate S is transported, and is brought into contact with the bonding stage BSR to heat the substrate S. The heating structure of bonding stage BSR is similar to that of bonding stage BS of FIG. Here, the stage length (Lbsr) of the bonding stage BSR is a length such that the substrate S can be heated to heat the substrate S, and is a length in the transport direction (X direction) of the substrate S. The width (W) of the bonding stage BSR is also a length capable of heating the substrate S by contacting the substrate S, and is a length (Y direction) orthogonal to the transport direction (X direction) of the substrate S. Further, the stage length (Lbsr) of the bonding stage BSR and the length (Ls) of the substrate S are larger than the width (W) (Lbsr> W, Ls> W).

  As shown in FIGS. 7B and 7D, when the substrate S is transported, the bonding stage BSR is lowered so that the bonding stage BSR and the substrate S do not rub. Ascent and descent are performed by a motor and a cam.

  As shown in FIG. 7E, the bonding stage BS is raised at the timing when the leading row of the package area P of the substrate S is transported to the attach point AP and the transportation is completed, and the substrate S is heated. The attachment point AP is a position at which the die D is bonded to the substrate S, and is also referred to as a bonding position BP.

  As shown in FIG. 7, the front length (Lbf) and the rear length (Lbr) of the bonding stage BSR are shorter than the length (Ls) of the substrate S with reference to the attach point AP (Lbf <Ls, Lbr < Ls), as shown in FIG. 8, when the bonding stage BSR is lifted to heat the substrate S, there are a region A1 with the bonding stage BSR and a region A2 without the bonding stage BSR under the substrate S, 1 There is a difference in temperature distribution within a single substrate. As a result, the amount of thermal expansion of the substrate can be made uneven within the substrate. Since the temperature distribution has a slope, as shown in FIG. 8C, the substrate is deformed into a scallop shape.

  When the substrate S is sequentially transported after bonding, this deformation occurs while the die D is mounted. When the area on which the die D is mounted reaches this temperature inclined portion, the die D is subjected to rotational stress and is torsionally shrunk.

  In addition, when this phenomenon occurs in a state where the curing of the bonding agent such as the DAF 18 is not sufficient, a rotational displacement (θ displacement) is generated in the die mounted on the substrate. This deformation also occurs when the substrate S is transported in front of the bonding stage BSR. Depending on the stage length of bonding stage BSR (the length in the transport direction (X direction) of substrate S), the shape of the substrate is deformed due to the stress in the unexpanded area in the previous stage non-heating area (uniform expansion Disappear). Thereby, the substrate positioning accuracy at the time of bonding is degraded, and the bonding accuracy is also degraded.

  The explanation will be returned to the example. A method of heating the substrate by the bonding stage according to the embodiment will be described with reference to FIGS. FIG. 9 is a view showing a bonding stage according to the embodiment, FIG. 9 (A) is a top view of a state in which the substrate is transported to the bonding stage, and FIG. 9 (B) is a side view of FIG. 9 (A). It is. FIG. 10 is a view for explaining the method of heating the substrate by the bonding stage according to the embodiment, and FIG. 10 (A) is a side view of a state in which the substrate is transported to the attach point; FIG. 10C is a side view of a state in which the die is bonded at the position of the substrate of (A) and the bonding stage is elevated, and FIG. 10C is a row of package areas from the position of the substrate of FIG. FIG. 10D is a side view of a state in which the die is bonded to the package area of the final row of the substrate and the bonding stage is lowered.

  As shown in FIG. 9, the bonding stage BS has a length (stage length) of Lbs and a width of W, and is made of a metal (such as copper) having good thermal conductivity covering the width of the transfer lane 52 (shoot width). Do. The substrate S is transported, and the bonding stage BS is lifted to contact the substrate S, thereby heating the substrate S. The substrate S has a plurality of package areas arranged in an array, for example, four package areas per row and eight package areas. The package area P1 of the first row is positioned at the head (right end in FIG. 9) of the transport direction of the substrate S, and the package area P8 of the eighth row is positioned at the tail end (left end in FIG. 9). Here, the stage length (Lbs) of the bonding stage BS is a length such that the substrate S can be heated to heat the substrate S, and is a length in the transport direction (X direction) of the substrate S. The width (W) of the bonding stage BS is also a length capable of heating the substrate S by contacting the substrate S, and is a length (Y direction) orthogonal to the transport direction (X direction) of the substrate S. Further, the stage length (Lbs) of the bonding stage BS and the length (Ls) of the substrate S are larger than the width (W) (Lbs> W, Ls> W).

  The length (Lbsf) of the bonding stage BS on the downstream side (substrate discharge unit 7 side) with respect to the attach point AP and the length (Lbsr) of the bonding stage BS on the upstream side (substrate supply unit 6) The length (Ls) or more (Lbsf L Ls, Lbsr L Ls) may be sufficient. When the attach point AP is located at the center of the bonding stage BS, the stage length (Lbs) of the bonding stage BS may be twice or more (Lbs ≧ 2 × Ls) the length (Ls) of the substrate S. In addition, since the substrate S is supported by the transport lane 52, the width of the bonding stage BS is smaller (smaller) than the width of the substrate S.

  As shown in FIG. 10A, the controller 8 lowers the bonding stage BS so that the bonding stage BS does not heat the substrate S when transporting the substrate S. The bonding stage BS is raised and lowered by a motor and a cam. In this state, the package area P1 in the top row (first row) of the substrate S is transported at once to the attach point AP.

  As shown in FIG. 10B, the control unit 8 raises the bonding stage BS at the timing when the transfer of the substrate S is completed, heats the entire substrate S, and then the package head in the first row by the bonding head 41. Bond a die D (four dies in FIG. 10) to P1. As described above, although the width of the substrate S is slightly larger than the width of the bonding stage BS, all the package areas including the package areas at both width ends are heated by the bonding stage BS. Since the width of the frame area of the substrate S is smaller than the width or length of the package area P, when heating at least all the package areas, it is said that the entire substrate S is heated. Therefore, the stage length of the bonding stage BS described above is such that the length of the substrate is set from the package area end (the right end in FIG. 9) of the first row to the package area end (the left end in FIG. 9) of the last row. It is also good.

  As shown in FIG. 10C, after bonding the package area P1 in the first row, the control unit 8 lowers the bonding stage BS to dissipate the heat of the entire substrate S while the package area P2 in the second row is attached. The substrate S is fed one pitch so as to be located at the point AP. The bonding stage BS is raised again, the entire substrate S is heated, and the die D is bonded to the package area P in the second row by the bonding head 41.

  Repeat this for each row until the last row. That is, the following is performed in N = 3 to K (K is the final row and K = 8 in the embodiment).

  The control unit 8 transports the substrate S such that the package area PN of the Nth row of the substrate S is located at the attach point AP in a state where the bonding stage BS is lowered, and raises the bonding stage BS. The die D is bonded to the package area PN of the Nth row of the substrate S while the whole is heated.

  As shown in FIG. 10D, when bonding to the package area PK of the final row is completed, the control unit 8 lowers the bonding stage BS to radiate the entire substrate S while rapidly bonding the substrate S to the bonding stage. Transport it out of the BS (pay it out).

  Thereby, the heating time of all the parts (each package area P) of the board | substrate S becomes the same. Although the heating time of each package area P is the same, the heating time of the die attach film 18 and the die D after bonding the die D to the substrate S becomes shorter in order from the first row to the final row.

  At the time of construction of one substrate, the front and back substrates are prevented from entering the area of bonding stage BS. This is to prevent uneven heating in the respective substrates of the front and back substrates by the front and back substrates straddling the boundary surface of the bonding stage BS.

  After moving the substrate S to the attach point AP, the control unit 8 images the alignment mark AM of the substrate S with the substrate recognition camera 44 to obtain the bonding position BP and performs positioning. The influence on the positioning when the substrate S expands due to heating will be described with reference to FIG. FIG. 11 is a view for explaining the influence on the positioning when the substrate expands due to heating, and FIG. 11 (A) is a schematic view showing the state before thermal expansion, and FIG. 11 (B) is uniform thermal expansion. FIG. 11 (C) is a schematic view showing a state in which thermal expansion occurs unevenly.

  As described above in the comparative example, when the substrate S expands nonuniformly by heating, as shown in FIGS. 11A and 11C, the alignment mark AM and the bonding area BA before thermal expansion, and the thermal expansion after The positions of the alignment mark AM and the bonding area BA are different, and the position of the bonding position BP obtained from the position of the alignment mark AM also changes. That is, due to the unexpected uniform thermal expansion, the positional relationship between the alignment mark AM and the bonding position BP is closed, and accurate bonding can not be performed.

  On the other hand, in the embodiment, as shown in FIGS. 11A and 11B, the substrate S is uniformly expanded by heating. In this case, although the positions of alignment mark AM and bonding area BA before thermal expansion and alignment mark AM and bonding area BA after thermal expansion are different, bonding position BP obtained from the position of alignment mark AM does not change. Thus, the center of the die (bonding position) can be recognized. Alignment mark AM and bonding area BA are included in package area P.

  After bonding the die D, the control unit 8 inspects with the substrate recognition camera 44 whether or not the bonding position BP is correctly made at the attach point AP. At this time, the center of the die and the center of the tab are determined, and it is checked whether the relative position between the die and the substrate is correct. Since the substrate S expands uniformly by heating, the inspection accuracy is better than in the comparative example.

  Next, a method of manufacturing a semiconductor device using the die bonder according to the embodiment will be described with reference to FIG. FIG. 12 is a flowchart showing a method of manufacturing a semiconductor device.

  Step S11: The wafer ring 14 holding the dicing tape 16 to which the die D divided from the wafer 11 is attached is stored in a wafer cassette (not shown) and carried into the die bonder 10. The controller 8 supplies the wafer ring 14 to the die supply unit 1 from the wafer cassette in which the wafer ring 14 is filled. Also, the substrate S is prepared and carried into the die bonder 10. The control unit 8 places the substrate S on the transport lane 52 by the substrate supply unit 6.

  Step S12: The controller 8 picks up the die D from the dicing tape 16 held by the wafer ring 14.

  Step S13: The controller 8 stacks the picked up die D on the package area P of the substrate S or on the already bonded die. More specifically, the control unit 8 places the die D picked up from the dicing tape 16 on the intermediate stage 31, picks up the die D again from the intermediate stage 31 with the bonding head 41, and packages the substrate S transported. Bond to area P.

  Step S14: The controller 8 moves the substrate S to the substrate unloading unit 7 by the substrate transfer claw 51, passes the substrate S to the substrate unloading unit 7, and unloads the substrate S from the die bonder 10.

<Modification>
Hereinafter, some representative modifications will be illustrated. In the following description of the modified example, the same reference numerals as those in the above-described embodiment may be used for portions having the same configurations and functions as those described in the above-described embodiments. And about description of this part, the description in the above-mentioned example shall be suitably used in the range which is not technically contradictory. In addition, part of the above-described embodiment and all or part of the plurality of modified examples may be applied in combination as appropriate as long as there is no technical contradiction.

(Modification 1)
A method of heating the substrate by the bonding stage according to the first modification will be described with reference to FIGS. FIG. 13 is a view showing a bonding stage according to the first modification, FIG. 13 (A) is a top view of a state in which the substrate is transported to the bonding stage, and FIG. 13 (B) is a side view of FIG. FIG. FIG. 14 is a view for explaining the heating method of the substrate by the bonding stage according to the first modification, and FIG. 14 (A) is a side view of the substrate being transported to the attachment point, and FIG. 14 (A) is a side view showing a state in which the die is attached at the position of the substrate at 14 (A) and the bonding stage is elevated, and FIG. 14 (C) is one row from the position of the substrate in FIG. FIG. 14 (D) is a side view showing a state in which the die is attached to the final row of the substrate and the bonding stage is lowered.

  As shown in FIG. 13, bonding stage BSA has a length (stage length) of Lbsa and a width of W, and is made of a metal (such as copper) having a high thermal conductivity covering the width of transport lane 52 (shoot width). Do. The substrate S is transported, and the substrate S is heated by raising the bonding stage BSA and contacting the substrate S. Here, the stage length (Lbsa) of the bonding stage BSA is a length such that the substrate S can be heated to heat the substrate S, and is a length in the transport direction (X direction) of the substrate S. The width (W) of the bonding stage BSA is also a length capable of heating the substrate S by contacting the substrate S, and is a length (Y direction) orthogonal to the transport direction (X direction) of the substrate S. Further, the stage length (Lbsa) of the bonding stage BSA and the length (Ls) of the substrate S are larger than the width (W) (Lbsa> W, Ls> W).

  The stage length (Lbsa) of the bonding stage BS is equal to or greater than the length (Ls) of the substrate S (Ls ≦ Lbsa), and is, for example, the same length as the bonding stage BSR of the comparative example. The length of the substrate S (Ls) is preferably smaller than twice (Ls ≦ Lbsa <2 × Ls).

  As shown in FIG. 14A, the controller 8 lowers the bonding stage BS so that the bonding stage BSA does not heat the substrate S when transporting the substrate S. The bonding stage BSA is raised and lowered by a motor and a cam. In this state, the package area P1 in the top row (first row) of the substrate S is transported at once to the attach point AP.

  As shown in FIG. 14B, the controller 8 raises the bonding stage BSA at the timing when the transfer of the substrate S is completed, and heats the entire substrate S, and then the package head in the first row is used by the bonding head 41. Bond a die D (four dies in FIG. 14) to P1.

  As shown in FIG. 14C, after bonding the package area P1 of the first row, the control unit 8 does not lower the bonding stage BSA, and the substrate S is such that the package area P2 of the second row comes to the attach point AP. At the same time, the bonding stage BSA is fed one pitch. The die D is bonded to the package area P2 in the second row by the bonding head 41. Repeat this for each row until the last row. That is, the following is performed in N = 3 to K (K is the final row and K = 8 in the first modification).

  With the bonding stage BSA in contact with the substrate S, the bonding stage BSA is transported together with the substrate S such that the package area P of the Nth row of the substrate S is located at the attach point AP, and the entire substrate S is heated. The die D is bonded to the package area of the Nth row of the substrate S.

  As shown in FIG. 14D, when bonding to the package area PK of the final row is completed, the control unit 8 lowers the bonding stage BSA to radiate the entire substrate S, and rapidly transfers the substrate S to the bonding stage. The bonding stage BSA is moved to the receiving position of the next substrate while being transported (discharged) out of the BSA.

  Thereby, even if it is a bonding stage (stage length) similar to a comparative example, a board | substrate can be heated uniformly. Also, the stage length can be shorter than in the embodiment.

(Modification 2)
In the embodiment, after bonding the die D, the control unit 8 inspects whether the bonding position is correctly made at the attachment point AP, but in the second modification, the stress check on the die is further performed. FIG. 15 is a view showing an optical system in the vicinity of the bonding stage according to the second modification.

  The bonding of the die D to the substrate S is completed, and after cooling the substrate S, an appearance inspection camera (imaging device) 47 capable of checking the position of the die on the substrate S is installed again. The appearance inspection camera 47 is provided separately from the substrate recognition camera 44 on the downstream side (substrate discharge unit 7 side) of the bonding stage BS. The control unit 8 inspects the relative positional relationship between the substrate S and the die D by the appearance inspection camera 47, and confirms the presence or absence of the θ deviation. In particular, it is determined that the die D is stressed if the dies bonded to the latter half of each pitch have a large θ deviation.

  It can be checked whether the die bonded to the substrate is stressed by thermal expansion. The modification 2 can be applied to the comparative example and the modification 1 in addition to the embodiment.

(Modification 3)
In the embodiment, the entire bonding stage BS is heated, but in the third modification, the bonding stage is divided into a plurality of areas in accordance with the bonding area BA (package area P in one row), and the temperature is adjusted individually. FIG. 16 is a view showing a bonding stage according to the third modification, and FIG. 16 (A) is a top view of a state where the substrate is positioned above the bonding stage, and FIG. 16 (B) is a view of FIG. It is a side view.

  As shown in FIG. 16, bonding stage BSC according to the third modification divides heater 45C into 17 pieces in accordance with bonding area BA (package area P in one row), and divides heater 17 into divided heaters 17 divided into 17 pieces. Enable to control H17 individually. The heater 45C (split heaters H7 to H14 in FIG. 16) is turned ON only at the portion on which the substrate S is mounted to adjust the heating temperature. Thereby, only the substrate mounting portion of the bonding stage BSC can be heated, and power consumption can be reduced.

(Modification 4)
In the third modification, the bonding stage is divided into a plurality of areas in accordance with the bonding area BA (package area P in one row) and the temperature is controlled individually. However, the bonding stage is an area on the upstream side of the attach point AP, an attach point The temperature is adjusted by dividing the area of the AP into three areas downstream of the attach point AP. FIG. 17 is a view showing a bonding stage according to the fourth modification, FIG. 17 (A) is a top view of a state in which the substrate is transported to the bonding stage, and FIG. 17 (B) is a side view of FIG. FIG.

  As shown in FIG. 17, the bonding stage BSD according to the fourth modification is divided into three areas into an area on the upstream side of the attach point AP, an area of the attach point AP, and an area on the downstream side of the attach point AP The heater 45D and the temperature control devices Hf and Hr are provided to enable individual control.

  Before the entire surface of the substrate S is mounted on the bonding stage BSD and reaches the attach point AP, the temperature is increased by heating by the temperature controller Hr. In addition, the heater 45D constantly performs temperature control only in the area of the attach point AP, and the temperature controller Hr in the upstream area and the temperature controller Hf in the downstream area have heating and cooling functions, and the entire substrate S is Let one machine heat up and cool down. In FIG. 17, the bonding stage BSD is heated by the heater 45D and the temperature controller Hr. As a result, it is possible to prevent the temperature difference between the central portion and the outer peripheral portion occurring in the process of air cooling the substrate.

(Modification 5)
In the embodiment, the entire substrate is heated by the bonding stage BS. However, in the fifth modification, no stage is provided in the area before and after the attach point AP, and a noncontact heating device is provided. FIG. 18 is a view showing a bonding stage according to the fifth modification, FIG. 18 (A) is a top view of a state in which the substrate is transported to the front of the bonding stage, and FIG. 18 (B) is a view shown in FIG. Side view of FIG.

  As shown in FIG. 18, the bonding stage BSE according to the fifth modification is located only in the area of the attach point AP, and the stage length is equal to the width of the bonding area BA (one row of package areas P). The bonding stage BSE includes a heater 45E. A radiation type heating device IRL such as an infrared radiation lamp capable of irradiation from below is provided on the entire substrate S located in the area immediately before and after the attach point AP, and the substrate S is heated to the temperature of the bonding stage without contact. The infrared radiation emitted from the heating device IRL has an absorption area (resonance absorption) on the target substrate S. Furthermore, a noncontact infrared radiation temperature sensor for detecting the temperature of the substrate S may be provided to control the temperature of the substrate S. As a result, it is possible to suppress the temperature drop of the substrate S caused by the substrate S coming into non-contact with the bonding stage BSE during transport.

(Modification 6)
In the fourth modification, the entire substrate is heated by the bonding stage BSD. However, in the sixth modification, the heat stage is provided also above the bonding stage. FIG. 19 is a view showing a bonding stage according to the sixth modification, and is a side view of a state in which the substrate is transported to the bonding stage.

  As shown in FIG. 19, a heat stage HSF is provided above the bonding stage BSD. The heat stage HSF is provided with a temperature controller Hr on the upstream side and a temperature controller Hr on the downstream side except for the attach point AP. With this configuration, the area before and after the attach point AP is formed in a tunnel shape, and the space of the transport area in the tunnel is temperature-controlled to the bonding stage temperature. In FIG. 19, the bonding stage BSD and the heat stage HSF are heated by the heater 45D and the temperature controller Hr. This makes it possible to suppress the temperature drop of the substrate S due to the non-contact state with the bonding stage BSD during transportation.

  In the embodiment and the modification, the heating and heat radiation of the substrate S are necessarily performed simultaneously for the entire substrate so that the temperature distribution does not have unevenness or inclination in the substrate.

  By making the thermal expansion of the entire substrate uniform, it is possible to reduce the torsional contraction and the torsional expansion of the substrate, and the stress on the die after bonding due to the uneven thermal deformation of the substrate due to the uneven expansion and contraction. It can be reduced. In addition, positional deviation of the die after bonding due to non-uniform thermal deformation of the substrate can be reduced.

  In addition, by reducing non-uniform thermal deformation of the substrate, bonding accuracy can be stabilized. That is, the positioning accuracy can be stabilized by reducing the non-uniform thermal expansion of the substrate before bonding.

  As mentioned above, although the invention made by the present inventor was concretely explained based on an example and a modification, the present invention is not limited to the above-mentioned example and a modification, and says that it can change variously It's too late.

  For example, in the embodiment, the stage length (Lbs) of the bonding stage BS and the length (Ls) of the substrate S are larger than the width (W) (Lbs> W, Ls> W), but Lbs ≦ W, Ls ≦ It may be W.

  In the embodiment, the package areas P are arranged in an array on the substrate S. However, the package areas P may be staggered or obliquely offset (displaced).

  Further, in the fifth modification, a radiation type heating device IRL such as an infrared radiation lamp capable of irradiation from below is provided on the whole of the substrate S located in the area immediately before and after the attach point AP. You may make it heat from.

Further, although the DAF is attached to the back surface of the wafer in the embodiment, the DAF may be omitted.
Further, although one pickup head and one bonding head are provided in the embodiment, two or more may be provided. Moreover, although the intermediate stage is provided in the embodiment, the intermediate stage may not be provided. In this case, the pickup head and the bonding head may be combined.

DESCRIPTION OF SYMBOLS 10 ... Die bonder 1 ... Die supply part 13 ... Push-up unit 2 ... Pickup part 24 ... Wafer recognition camera 3 ... Alignment part 31 ... Intermediate stage 32 ... Stage recognition Camera 4 ... bonding part 41 ... bonding head 42 ... collet 44 ... substrate recognition camera 45 ... heater (heating device)
47: Appearance inspection camera 5: Transport unit 51: Substrate transport claw 52: Transport lane 6: Substrate supply unit 7: Substrate unloading unit 8: Control unit S: Substrate BS ... bonding stage D ... die P ... package area

Claims (19)

A transport lane configured to transport a substrate having a plurality of package areas in a first direction from the substrate supply unit toward the substrate output unit;
A bonding stage having a heating device for heating the substrate;
A bonding head for bonding a die to the substrate transported onto the bonding stage;
A control unit that controls the transfer lane, the bonding stage, and the bonding head;
Equipped with
The said control part is a die bonding apparatus which positions all the said several package area of the said board | substrate on the said bonding stage, or upper direction during bonding of the said board | substrate 1 sheet. In claim 1,
The length in the first direction on the side where the substrate supply unit is located from the attach point of the bonding stage and the length in the first direction on the side where the substrate output unit is located from the attach point are respectively the substrate The die bonding apparatus which is more than the length in the first direction. In claim 2,
The control unit
(A) With the bonding stage lowered below the substrate, the substrate is transported such that the package area of the Nth row of the substrate is positioned at the attach point,
(B) A die bonding apparatus for bonding the die to the Nth row package area of the substrate while heating the substrate by raising the bonding stage. In claim 3,
The said control part is a die bonding apparatus which conveys the said board | substrate out of the said bonding stage by lowering the said bonding stage, when bonding of the package area of the last row | line | column of the said board | substrate is complete | finished. In claim 1,
The said control part is a die bonding apparatus which moves the said bonding stage in the said 1st direction with the said board | substrate. In claim 5,
The control unit
(A) With the bonding stage lowered below the substrate, the substrate is transported such that the package area of the first row of the substrate is positioned at the attach point,
(B) raising the bonding stage to bond the die to the first row package area of the substrate while heating the substrate;
(C) conveying the bonding stage together with the substrate such that the package area of the Nth row of the substrate is located at the attachment point, with the bonding stage in contact with the substrate;
(D) A die bonding apparatus for bonding the die to the Nth row package area of the substrate while heating the substrate. In claim 6,
The control unit lowers the bonding stage when the bonding of the package area of the final row of the substrate is completed, and transports the substrate in the first direction, and the control unit performs the bonding in the direction opposite to the first direction. Die bonding device that moves the bonding stage. In claim 1,
Furthermore, the die bonding apparatus provided with the die supply part which has a wafer ring holder holding the dicing tape by which the said die was stuck. In claim 8, further,
A pickup head for picking up the die;
An intermediate stage on which the picked up die is placed;
Die bonding apparatus comprising: In any one of claims 1 to 9,
And an imaging device provided between the bonding stage and the substrate unloading unit for imaging a die bonded to the substrate.
The said control part is a die bonding apparatus which test | inspects the relative positional relationship of the said board | substrate and the said die based on the image imaged with the said imaging device. (A) carrying in a wafer ring holder for holding a dicing tape to which a die is attached;
(B) carrying in a substrate having a plurality of package areas;
(C) picking up the die;
(D) transporting the substrate in a first direction from the substrate supply unit to the substrate unloading unit;
(E) bonding the picked up die onto the substrate or onto a die already bonded to the substrate;
Equipped with
The step (e) transports above the bonding stage having a heating device for heating the substrate, and during bonding of one substrate, the entire plurality of package areas of the substrate are on the bonding stage or The manufacturing method of the semiconductor device which bonds the die | dye which picked up and located said upper side. In claim 11,
The length in the first direction on the side where the substrate supply unit is located from the attach point of the bonding stage and the length in the first direction on the side where the substrate outlet is located from the attach point are respectively the substrate A method of manufacturing a semiconductor device having a length equal to or greater than the length in the first direction. In claim 12,
In the step (e),
(E1) transporting the substrate such that the package area of the Nth row of the substrate is positioned at the attachment point of the bonding stage, with the bonding stage lowered below the substrate;
(E2) raising the bonding stage to bond the die to the Nth row package area of the substrate while heating the substrate;
And manufacturing a semiconductor device. In claim 13,
The step (e) further includes the step of: (e3) lowering the bonding stage when the bonding of the package area of the final row of the substrate is finished, and transporting the substrate outside the bonding stage Device manufacturing method. In claim 11,
The step (e) is a method of manufacturing a semiconductor device in which the bonding stage is moved in the first direction together with the substrate. In claim 15,
In the step (e),
(E1) transporting the substrate such that the package area in the first row of the substrate is positioned at the attach point, with the bonding stage lowered below the substrate;
(E2) raising the bonding stage to bond the die to the first row package area of the substrate while heating the substrate;
(E3) transporting the bonding stage together with the substrate such that the package area of the Nth row of the substrate is located at the attach point, with the bonding stage in contact with the substrate;
(E4) bonding the die to the Nth row package area of the substrate while heating the substrate;
And manufacturing a semiconductor device. In claim 16,
Further, in the step (e), when bonding of the package area of the final row of the substrate is completed, the bonding stage is lowered to transport the substrate in the first direction, and A method of manufacturing a semiconductor device, comprising the step of moving the bonding stage in the opposite direction. In claim 11,
In the step (c), the picked up die is placed on an intermediate stage,
The step (e) is a method of manufacturing a semiconductor device in which a die placed on the intermediate stage is picked up. In any one of claims 11 to 18, after the step (f) and the step (e), after the substrate is cooled, the relative positional relationship between the substrate and the die is inspected based on the image captured by the imaging device. A method of manufacturing a semiconductor device, comprising:

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