JP2019046658A - Plasma processing apparatus and plasma processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve a film forming speed and to form a high-quality film even when a plurality of types of gases reacting with each other are used. SOLUTION: A vacuum container 2 in which a substrate W is housed, an antenna 3 for plasma generation provided in the vacuum container 2 so as to face the substrate W, and a first gas are supplied into the vacuum container 2. A first supply path R1 having a first supply port Z1 and a second supply path R2 having a second supply port Z2 for supplying a second gas having a reactivity to the first gas in the vacuum vessel 2. The first supply path R1 and the second supply path R2 are provided independently of each other. [Selection diagram] Fig. 1

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method.

  As shown in Patent Document 1, as a plasma processing apparatus, there is one which generates an inductive coupling type plasma (abbr. ICP) and processes the substrate using this inductive coupling type plasma.

  Specifically, the plasma processing apparatus includes a vacuum vessel in which the substrate is accommodated, and an antenna provided to face the substrate in the vacuum vessel, and supplies a film forming gas into the vacuum vessel, and the antenna The substrate is subjected to processing such as film formation by flowing a high frequency current to generate an inductive coupling type plasma.

Patent No. 5874854

  In the above-described plasma processing apparatus, when a plurality of types of film forming gases are supplied to the vacuum chamber, there are problems such as the film forming speed becoming slow or the film quality deteriorating depending on the types of film forming gases. The inventor has found that it occurs.

  As a result of intensive investigations by the inventors of the present application, when the plurality of types of film-forming gases are gases that react with each other, such as hydrogen gas and oxygen gas, for example, these film-forming gases are inside the vacuum chamber. It has been found that the cause is that the reaction occurs before reaching a region where plasma is generated (hereinafter referred to as a plasma generation region).

This is because, with regard to the reduction of the film forming rate, if a plurality of types of film forming gases react before reaching the plasma generation region, the film formation gas supplied to the plasma generation region decreases. , Because the plasma density is reduced.
In addition, with regard to the deterioration of the film quality, a product generated by the reaction of a plurality of types of film-forming gases may be mixed into the film more than necessary.

  Such a problem is a problem that commonly occurs not only when forming a film on a substrate, but also when the substrate is subjected to, for example, etching, ashing, or other surface treatment, and supplies multiple types of gases that react with each other to the vacuum vessel. As a result, the processing speed may be reduced, and the quality of the substrate surface may be degraded.

  Therefore, the main object of the present invention is to improve the processing speed and ensure the quality of the substrate surface even when using a plurality of types of gases that react with each other.

  That is, a plasma processing apparatus according to the present invention includes: a vacuum vessel in which a substrate is accommodated; an antenna for plasma generation provided in the vacuum vessel so as to face the substrate; and a first gas in the vacuum vessel. And a second supply passage having a second supply passage for supplying a second gas having reactivity with the first gas in the vacuum vessel. It is characterized in that the first supply path and the second supply path are provided independently of each other.

In the plasma processing apparatus configured as described above, since the first supply path and the second supply path are provided independently of each other, the first gas and the first gas have reactivity with the first gas. It can be supplied into the vacuum vessel without reacting with the two gases.
Thus, the reaction between the first gas and the second gas can be suppressed before reaching the plasma generation region in the vacuum chamber, and the processing speed such as the film forming speed can be improved. It is possible to secure the quality of the substrate surface, such as producing a high quality film.

It is preferable that at least one of the first supply port and the second supply port is provided in the plasma generation region generated by the antenna or in the region.
With such a configuration, it is possible to reliably prevent the reaction of the first gas and the second gas before reaching the plasma generation region.

It is preferable that the antenna has a linear shape, and a plurality of the first supply port and the second supply port are provided along the longitudinal direction of the antenna.
With such a configuration, each of the first gas and the second gas can be supplied into the vacuum vessel from a plurality of places, so that the processing speed can be further improved.

It is preferable that the first supply port and the second supply port are alternately arranged.
By arranging the supply port in this manner, it is possible to prevent the first gas and the second gas from being biased in the longitudinal direction, and the uniformity of the quality of the substrate surface is improved to further enhance the quality. Can be

In the vacuum vessel, it is preferable that a plasma generation suppressing member be provided between the antenna and an opposing wall opposite to the substrate with respect to the antenna.
With such a configuration, it is possible to suppress the generation of plasma between the plasma generation suppressing member and the opposing wall, so that the high frequency current applied to the antenna corresponds to that of the plasma generation suppressing member and the opposing wall. It can suppress flowing out from the antenna to the opposite wall through the space between them.
Thereby, since the magnitude of the high frequency current flowing through the antenna is made uniform along the antenna, the uniformity of the density distribution of plasma along the antenna can be enhanced, and the substrate processing uniformity in the direction along the antenna Can be enhanced.

  Regardless of the arrangement or shape of the plasma generation suppressing member, in order to provide the first supply path and the second supply path independently of each other, the first supply path or the second supply may be provided inside the plasma generation suppressing member. Preferably, a pathway is formed.

It is preferable that the first supply port or the second supply port is formed on the surface of the plasma generation suppressing member facing the antenna side.
With such a configuration, since the generation of plasma is suppressed by the surface of the plasma generation suppressing member facing the antenna side, the opening formed by forming the first supply port or the second supply port on that surface Will be provided facing the plasma generation region. Thus, as described above, it is possible to reliably prevent the reaction of the first gas and the second gas before reaching the plasma generation region.

When the dimension in the longitudinal direction of the antenna is large, if the dimension in the longitudinal direction of the plasma generation suppressing member is enlarged corresponding to the antenna, the larger the dimension in the longitudinal direction, the larger the amount of deflection due to its own weight. As a result, the distance between the central portion of the antenna and the plasma generation suppressing member approaches, the plasma density may become uneven in the longitudinal direction of the antenna, and the quality of the substrate surface may be degraded.
Therefore, it is preferable that at least one of the first supply path or the second supply path is formed by a pipe, and the pipe penetrates the plasma generation suppressing member and supports the plasma generation suppressing member.
With such a configuration, since the plasma generation suppressing member is supported by the piping that constitutes the first supply path and the second supply path, for example, this piping may be located at or near the longitudinal center of the plasma generation suppressing member. If arranged, the amount of deflection of the plasma generation suppressing member can be reduced.

  In a specific embodiment, the first gas contains oxygen gas, and the second gas contains hydrogen gas.

Further, in the plasma processing method according to the present invention, a vacuum vessel in which a substrate is accommodated, an antenna for plasma generation provided so as to face the substrate in the vacuum vessel, and a gas are supplied into the vacuum vessel. A plasma processing apparatus using a plasma processing apparatus including a first supply path and a second supply path provided independently of each other, wherein a first gas is introduced into the vacuum vessel using the first supply path. , And supplying a second gas having reactivity with the first gas into the vacuum vessel using the second supply path.
With such a plasma processing method, the same effects as those of the above-described plasma processing apparatus can be exhibited.

  According to the present invention configured as described above, the processing speed can be improved and the quality of the substrate surface can be secured even when using plural types of gases that react with each other.

It is sectional drawing along the longitudinal direction of the antenna which shows the structure of the plasma processing apparatus of this embodiment typically. It is sectional drawing orthogonal to the longitudinal direction of the antenna which shows the structure of the plasma processing apparatus of the embodiment typically. It is sectional drawing orthogonal to the longitudinal direction of the antenna which shows typically the structure of the plasma processing apparatus of modification embodiment. It is sectional drawing orthogonal to the longitudinal direction of the antenna which shows typically the structure of the plasma processing apparatus of modification embodiment. It is sectional drawing which shows typically the structure of the plasma generation suppression member of deformation | transformation embodiment.

  Hereinafter, an embodiment of a plasma processing apparatus according to the present invention will be described with reference to the drawings.

<Device configuration>
The plasma processing apparatus 100 of the present embodiment is for processing the substrate W using an inductive coupling type plasma P. Here, the substrate W is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic EL display, a flexible substrate for a flexible display, or the like. Further, the processing to be performed on the substrate W is, for example, film formation by plasma CVD, etching, ashing, sputtering or the like.

  The plasma processing apparatus 100 is a plasma CVD apparatus for film formation by plasma CVD, a plasma etching apparatus for etching, a plasma ashing apparatus for ashing, and a plasma sputtering apparatus for sputtering. be called.

  Specifically, as shown in FIG. 1 and FIG. 2, the plasma processing apparatus 100 is inductively coupled to the vacuum vessel 2 evacuated, the linear antenna 3 disposed in the vacuum vessel 2, and the vacuum vessel 2. And a high frequency power supply 4 for applying to the antenna 3 a high frequency for generating the plasma P of the type. A high frequency current IR is applied to the antenna 3 by applying a high frequency to the antenna 3 from the high frequency power source 4, and an induction electric field is generated in the vacuum vessel 2 to generate inductively coupled plasma P.

  The vacuum vessel 2 is, for example, a metal vessel, and the inside thereof is evacuated by a vacuum evacuation device 6. The vacuum vessel 2 is electrically grounded in this example.

  In the vacuum chamber 2, a substrate holder 8 for holding a substrate W is provided. As in this example, a bias voltage may be applied to the substrate holder 8 from the bias power supply 9. The bias voltage is, for example, a negative DC voltage, a negative bias voltage or the like, but is not limited thereto. With such a bias voltage, for example, the energy when positive ions in the plasma P are incident on the substrate W can be controlled to control the degree of crystallization of a film formed on the surface of the substrate W, etc. . A heater 81 for heating the substrate W may be provided in the substrate holder 8.

  The antenna 3 is disposed above the substrate W in the vacuum vessel 2 along the surface of the substrate W (for example, substantially parallel to the surface of the substrate W). In the present embodiment, a plurality of linear antennas 3 are arranged in parallel along the substrate W (for example, substantially parallel to the surface of the substrate W). In this way, it is possible to generate a uniform plasma P in a wider range, and to cope with the processing of a larger substrate W. Although the example of seven antennas 3 is shown in FIG. 2, it can not restrict to this.

  As shown in FIG. 1, both ends of the antenna 3 pass through a pair of opposing side walls 2 a and 2 b of the vacuum vessel 2. Insulating members 11 are respectively provided in parts through which both ends of the antenna 3 are to be penetrated to the outside of the vacuum vessel 2. Both ends of the antenna 3 pass through the respective insulating members 11, and the through portions are vacuum sealed by, for example, a packing 12. The antenna 3 is supported by the insulating member 11 in a state of being electrically insulated from the opposing side walls 2 a and 2 b of the vacuum vessel 2. The space between each of the insulating members 11 and the vacuum vessel 2 is also vacuum sealed by, for example, a packing 13. The material of the insulating member 11 is, for example, a ceramic such as alumina, quartz, or an engineering plastic such as polyphenylene sulfide (PPS) or polyetheretherketone (PEEK).

  The material of each antenna 3 is, for example, copper, aluminum, an alloy thereof, stainless steel or the like, but is not limited thereto. Alternatively, the antenna 3 may be hollow and coolant such as cooling water may be supplied to cool the antenna 3.

  Furthermore, in the antenna 3, a portion located inside the vacuum vessel 2 is covered by a straight tubular insulating cover 10. Both ends of the insulating cover 10 are supported by an insulating member 11. The material of the insulating cover 10 is, for example, quartz, alumina, fluorine resin, silicon nitride, silicon carbide, silicon or the like.

  By providing the insulating cover 10, it is possible to suppress the incidence of charged particles in the plasma P to the antenna 3, so suppressing the rise of the plasma potential due to the incidence of the charged particles (mainly electrons) to the antenna 3. It is possible to prevent the antenna 3 from being sputtered by charged particles (mainly ions) to cause metal contamination (plasma contamination) with respect to the plasma P and the substrate W.

  As shown in FIG. 1, each antenna 3 has a feeding end 3a to which a high frequency is fed in the antenna direction (longitudinal direction X), and a grounded end 3b grounded. Specifically, a portion extending to the outside from one side wall 2a or 2b at both end portions in the longitudinal direction X of each antenna 3 becomes a feeding end 3a, and a portion extending to the outside from the other side wall 2a or 2b It becomes the ground end 3b.

  Here, a high frequency is applied to the feed end 3 a of each antenna 3 from the high frequency power source 4 via the matching unit 41. The frequency of the high frequency is, for example, general 13.56 MHz, but is not limited thereto.

  Further, the plasma processing apparatus 100 further includes a plasma generation suppressing member 5 between the antenna 3 and the opposing wall 2 c (hereinafter also referred to as the upper wall 2 c) opposite to the substrate W in the vacuum vessel 2. Is provided.

  The plasma generation suppressing member 5 is partially or entirely made of a dielectric, and here, the whole is made of a dielectric material. The plasma generation suppressing member 5 of the present embodiment is a flat plate disposed so as to face each of the insulating covers 10 covering the respective antennas 3, and the insulating members 11 provided at both longitudinal end portions of the antenna 3 It is supported. The plasma generation suppressing member 5 may be configured of a single flat plate member, or may be configured of a plurality of flat plate members provided at positions corresponding to the respective antennas. When it comprises from a plurality of flat plate members, flat plate members adjacent to each other may be laid without gaps, or may be arranged with gaps.

  The material of the plasma generation suppressing member 5 is preferably a material having a low dielectric constant, for example, ceramics such as alumina, silicon carbide and silicon nitride, quartz glass, non-alkali glass, other inorganic materials, silicon or the like. By doing so, the capacitance between the antenna 3 and the upper wall 2c becomes smaller, and the high frequency current IR flowing out from the antenna 3 to the upper wall 2c through the plasma generation suppressing member 5 becomes smaller.

  The plasma processing apparatus 100 of the present embodiment is particularly useful when forming a film on the substrate W using a plurality of types of film forming gases that react with each other, and as shown in FIGS. A first supply path L1 for supplying a first film forming gas, which is a first gas, into the container 2, and a second gas having reactivity with the first film forming gas in the vacuum container 2. And a second supply path L2 for supplying the second film forming gas, and the first supply path L1 and the second supply path L2 are provided independently of each other.

The first supply path R1 supplies a first inlet (not shown) for taking in the first film forming gas contained in a first gas source (not shown) and the first film forming gas into the vacuum vessel 2. It has a first supply port Z1 and a first flow path L1 connecting a first intake port and a first supply port Z1 (not shown).
The first supply path R1 of the present embodiment supplies, into the vacuum vessel 2, one containing oxygen gas as the first film forming gas, but the first composition may be selected according to the processing content to be applied to the substrate W. The membrane gas may be changed as appropriate.
In addition, as a specific structure of 1st supply path R1, the aspect etc. which comprise the aspect which comprises a part or whole by piping, the manifold block in which the internal flow path was formed, etc. can be mentioned, for example .

The second supply path R2 supplies a second inlet (not shown) for taking in a second film forming gas contained in a second gas source (not shown) and the second film forming gas into the vacuum vessel 2. A second supply port Z2 and a second flow path L2 connecting a second intake port and a second supply port Z2 (not shown) are provided.
The second supply path R2 of the present embodiment supplies, into the vacuum vessel 2, one containing hydrogen gas as the second film forming gas, but depending on the processing content to be applied to the substrate W, the second composition The membrane gas may be changed as appropriate.
In addition, as a specific configuration of the second supply route R2, similarly to the first supply route R1, for example, a configuration in which a part or the whole is configured by piping, or a configuration using a manifold block in which an internal flow passage is formed And the like.

The first supply path R1 and the second supply path R2 are provided without merging with each other, that is, without the first flow path L1 and the second flow path L2 merging with each other. And a plurality of second supply paths R2 are provided.
More specifically, as shown in FIG. 1, the plurality of first supply paths R1 and the plurality of second supply paths R2 are arranged along the longitudinal direction X of the antenna 3, and are shown here in FIG. 2. Thus, the plurality of first supply paths R1 and the plurality of second supply paths R2 are arranged along the direction orthogonal to the longitudinal direction of the antenna 3.
Note that FIG. 1 shows four first supply paths R1 and three second supply paths R2, and FIG. 2 shows two first supply paths R1 and two second supply paths R2. The number of one supply route R1 and the number of second supply routes R2 need not be limited to those shown in FIG. 1 and FIG.

For example, a flow rate regulator (not shown) is provided in the first supply path R1 and the second supply path R2, and the first film forming gas is supplied into the vacuum vessel 2 from the first supply path R1. At the same time, the second film forming gas can be supplied into the vacuum vessel 2 from the second supply path R2.
Note that it is not necessary to simultaneously supply the first film formation gas and the second film formation gas. For example, the supply of the first film formation gas and the supply of the second film formation gas are alternately performed. The first film formation gas and the second film formation gas may be supplied separately, for example, by switching to the

  The first supply path R1 and the second supply path R2 are provided through the upper wall 2c of the vacuum vessel 2, and the first supply port Z1 and the second supply port Z2 are disposed in the vacuum vessel 2 There is. The first supply path R1 and the second supply path R1 do not necessarily penetrate the upper wall 2c. For example, the first supply path R1 and the first supply path R1 may be provided by penetrating the side walls 2a and 2b and the bottom wall 2d. As long as 2 supply route R2 is independent, arrangement of each supply route R1 and R2 may be changed suitably. Moreover, it is preferable to arrange at least one of the first supply port Z1 and the second supply port Z2 in the vacuum vessel 2, but the other is, for example, the upper wall 2c or the side walls 2a and 2b or the bottom wall of the vacuum vessel 2 It may be formed on the inner wall surface such as 2d.

  In the present embodiment, as shown in FIG. 1, the first supply port Z1 of each first supply path R1 is disposed along the longitudinal direction X of the antenna 3, and the second supply port of each second supply path R2 Z2 is disposed along the longitudinal direction X of the antenna 3, and the plurality of first supply ports Z1 and the plurality of second supply ports Z2 are arranged in a straight line. Here, the first supply ports Z1 and the second supply ports Z2 are alternately arranged, and the first supply ports Z1 and the second supply ports Z2 adjacent to each other are arranged at equal intervals.

  Further, in the present embodiment, as shown in FIG. 2, the first supply port Z1 of each first supply path R1 is disposed along the direction orthogonal to the longitudinal direction X of the antenna 3, and each second supply path R2 Of the plurality of second supply ports Z2 are arranged along a direction orthogonal to the longitudinal direction X of the antenna 3, and the plurality of first supply ports Z1 and the plurality of second supply ports Z2 are arranged in a straight line. . Here, the first supply ports Z1 and the second supply ports Z2 are alternately arranged, and the first supply ports Z1 and the second supply ports Z2 adjacent to each other are arranged at equal intervals.

  The first supply port Z1 and the second supply port Z2 arranged in this manner are provided to face the area Pa where plasma is generated by the antenna 3 (hereinafter referred to as a plasma generation area Pa).

  More specifically, in the present embodiment, as described above, the plasma generation suppressing member 5 is provided between the antenna 3 and the upper wall 2 c, and the surface 5 a facing the antenna side of the plasma generation suppressing member 5 is A suppression surface 5a is formed to suppress the generation of plasma P on the upper wall 2c side of the surface 5a. In other words, since plasma P is generated between the suppression surface 5 a and the antenna 3, the space is at least a part of the plasma generation region Pa.

  Therefore, in the present embodiment, the first supply path R1 and the second supply path R2 are formed so as to penetrate the plasma generation suppressing member 5 in the thickness direction, and the first supply port Z1 and the second supply port Z2 are plasma generated. By forming the suppression surface 5a of the suppression member 5, the first supply port Z1 and the second supply port Z2 are made to face the plasma generation region Pa.

<Effect of this embodiment>
According to the plasma processing apparatus 100 of this embodiment configured as described above, since the first supply path R1 and the second supply path R2 are provided independently of each other, the first film forming gas and the The first film formation gas and the second film formation gas having reactivity can be supplied into the vacuum vessel 2 without being reacted with each other.
Thus, the reaction between the first film forming gas and the second film forming gas before reaching the plasma generation region Pa in the vacuum chamber 2 can be suppressed, and the film forming rate can be increased. While improving, it becomes possible to produce a good quality film.

  Further, since the first supply port Z1 and the second supply port Z2 are formed in the suppression surface 5a of the plasma generation suppressing member 5, the first supply port Z1 and the second supply port Z2 are set as the plasma generation region Pa. The first film formation gas and the second film formation gas can be reliably prevented from reacting before reaching the plasma generation region Pa.

  Furthermore, since a plurality of first supply ports Z1 and a plurality of second supply ports Z2 are provided along the longitudinal direction X of the antenna 3, a plurality of first film forming gas and a plurality of second film forming gases may be formed. The film can be supplied into the vacuum vessel 2 from a portion, and the film forming rate can be further improved.

  Moreover, since the first supply port Z1 and the second supply port Z2 are alternately arranged, the first film forming gas and the second film forming gas are supplied unevenly in the longitudinal direction X of the antenna 3 Can be prevented, and the uniformity of the film quality can be improved to further improve the quality.

Since the plasma generation suppressing member 5 is provided between the antenna 3 and the upper wall 2c of the vacuum vessel 2, generation of plasma between the plasma generation suppressing member 5 and the upper wall 2c can be suppressed. The high frequency current IR applied to the antenna 3 can be prevented from flowing out from the antenna 3 to the upper wall 2 c through the space between the plasma generation suppressing member 5 and the upper wall 2 c.
Thereby, the power efficiency of the high frequency applied to the antenna 3 can be enhanced. Further, since the magnitude of the high frequency current IR flowing through the antenna 3 is made uniform along the antenna 3, the uniformity of the density distribution of the plasma P along the antenna 3 can be enhanced, and the direction along the antenna 3 The uniformity of substrate processing can be enhanced.

<Other Modified Embodiments>
The present invention is not limited to the above embodiment.

  For example, in the embodiment, both the first supply port Z1 and the second supply port Z2 are disposed to face the plasma generation region Pa, but at least one of the first supply port Z1 or the second supply port Z2 If the first film formation gas and the second film formation gas are arranged to face the plasma generation region Pa, it is possible to prevent the reaction between the first film formation gas and the second film formation gas before reaching the plasma generation region Pa.

Further, at least one of the first supply port Z1 or the second supply port Z2 may be disposed in the plasma generation region Pa. As a specific configuration, for example, by extending one of the first supply path R1 or the second supply path R2 in the embodiment from the suppression surface 5a of the plasma generation suppressing member 5 further to the antenna 3 side, the first supply port Z1 Alternatively, the second supply port Z2 can be disposed in the plasma generation region Pa.
Even with such a configuration, it is possible to reliably prevent the reaction between the first film forming gas and the second film forming gas before reaching the plasma generation region Pa.

In the embodiment, the plurality of first supply ports Z1 and the plurality of second supply ports Z2 are arranged in a straight line along the longitudinal direction X of the antenna 3. However, for example, they are orthogonal to the longitudinal direction X of the antenna 3 The plurality of first supply ports Z1 and the plurality of second supply ports Z2 may be arranged in a state of being shifted in the direction.
Moreover, in the said embodiment, although the 1st supply port Z1 and the 2nd supply port Z2 were arrange | positioned alternately and at equal intervals, the 1st supply port Z1 and the 2nd supply port Z2 are arrange | positioned irregularly, for example The arrangement of the supply ports Z1 and Z2 may be changed as appropriate.
Furthermore, the first supply port Z1 and the second supply port Z2 do not necessarily have to be provided in plurality. That is, only one first supply path R1 or one second supply path R2 may be provided.

Although the said embodiment demonstrated the case where the 1st film-forming gas containing oxygen gas, and the 2nd film-forming gas containing hydrogen gas were used, the 1st gas for film-forming or 2nd composition A third film-forming gas having reactivity with any of the film-forming gases may be used. In this case, the third supply path for supplying the third film forming gas into the vacuum vessel 2 may be provided independently of the first supply path R1 and the second supply path R2.
Of course, four or more supply paths may be provided independently of each other to supply four or more types of film-forming gases to the vacuum vessel 2.

Further, the film forming gas is not limited to one containing oxygen gas or hydrogen gas. For example, the first film forming gas contains NH ₃ (ammonia), and the second film forming gas is B _2. It may contain H ₆ (diborane). Furthermore, the first gas and the second gas do not necessarily have to be film forming gases. That is, if the first gas and the second gas are gases that react with each other in a state where plasma is not generated, the processing speed is improved and the quality of the substrate surface is secured by using the present invention. Is possible.

Although the said embodiment demonstrated the plasma generation suppression member 5 which consists of dielectrics, you may comprise the plasma generation suppression member 5 using metal, for example, without using a dielectric.
Specifically, as shown in FIG. 3, the plasma generation suppressing member 5 which is partially or entirely made of metal is isolated from the upper wall 2c (the opposite wall 2c facing the antenna) of the vacuum vessel 2 and an insulating member such as ceramics or resin. The aspect provided via 14 is mentioned. In this embodiment, since the opening is formed in the upper wall 2c, the cover body 16 for closing the opening 15 is provided in order to prevent an electric shock due to contact with the plasma generation suppressing member 5.
With such a plasma generation suppressing member 5, since it is made of metal, mechanical strength can be improved.
Moreover, since the plasma generation suppressing member 5 is electrically insulated from the wall surface of the vacuum vessel 2 and is in a floating state, generation of plasma P between the plasma generation suppressing member 5 and the antenna 3 is suppressed, and the comparison is made. High deposition rate can be obtained.

Furthermore, in the said embodiment, although the plasma generation suppression member 5 was supported by the insulation member 11 provided in the longitudinal direction X both ends of the antenna 3, as shown in FIG. 4, 1st supply path R1 or 2nd supply At least one of the paths R2 may be configured as a pipe, and the pipe may be used to support the plasma generation suppressing member 5.
Specifically, in the configuration shown in FIG. 4, both the first supply path R1 and the second supply path R2 are configured by pipes, and these pipes are plasma generation suppressing members at the end portions on the supply ports Z1 and Z2 side A support f that supports 5 is provided.
The supporting portion f is, for example, a flange-like flange f extending radially outward from the outer peripheral surface of the pipe, and the plasma generation suppressing member 5 is brought into surface contact with the flange f facing the plasma generation suppressing member 5. Are configured to be supported. Here, a plurality of support portions f are provided along the pipe axis direction of the pipe, and the plurality of plasma generation suppressing members 5 are supported by these support portions f in a state of being arranged along the pipe axis direction. ing.

Moreover, in the embodiment, the plurality of first supply paths R1 and the plurality of second supply paths R2 penetrate the plasma generation suppressing member 5 in the thickness direction, but as shown in FIG. 5, the first supply path R1 Alternatively, a part of the second supply path R2 may penetrate the plasma generation suppressing member 5 along the direction orthogonal to the thickness direction.
In this case, the first flow path L1 and the second flow path L2 are composed of the main flow path G orthogonal to the thickness direction of the plasma generation suppressing member 5 and a plurality of branch flow paths H branched from the main flow path G The flow path H may be opened to the suppression surface 5a of the plasma generation suppression member 5, and the supply ports Z1 and Z2 may be formed.

  In addition, it goes without saying that the present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the invention.

100 ... plasma processing apparatus W ... substrate P ... plasma Pa ... plasma generation region 2 ... vacuum vessel 3 ... antenna Z1 ... first supply port Z2 ... second supply Port R1 ... first supply path R2 ... second supply path 5 ... plasma generation suppressing member

Claims (10)

A vacuum vessel in which the substrate is accommodated;
An antenna for plasma generation provided to face the substrate in the vacuum vessel;
A first supply path having a first supply port for supplying a first gas into the vacuum vessel;
A second supply path having a second supply port for supplying a second gas having reactivity with the first gas in the vacuum vessel;
The plasma processing apparatus, wherein the first supply path and the second supply path are provided independently of each other.   The plasma processing apparatus according to claim 1, wherein at least one of the first supply port and the second supply port is provided in the plasma generation region generated by the antenna or facing the region. The antenna is straight and
The plasma processing apparatus according to claim 1, wherein a plurality of the first supply port and the second supply port are provided along the longitudinal direction of the antenna.   The plasma treatment apparatus according to claim 3, wherein the first supply port and the second supply port are alternately arranged.   The plasma generation suppressing member according to any one of claims 1 to 4, wherein a plasma generation suppressing member is provided in the vacuum vessel between the antenna and an opposing wall opposite to the substrate with respect to the antenna. Plasma processing equipment.   The plasma processing apparatus according to claim 5, wherein the first supply path or the second supply path is formed inside the plasma generation suppressing member.   The plasma processing apparatus according to claim 5, wherein the first supply port or the second supply port is formed on a surface of the plasma generation suppressing member facing the antenna side. At least one of the first supply path or the second supply path is constituted by piping,
The plasma processing apparatus according to any one of claims 5 to 7, wherein the pipe penetrates the plasma generation suppressing member and supports the plasma generation suppressing member. The first gas contains oxygen gas,
The plasma processing apparatus according to any one of claims 1 to 8, wherein the second gas contains hydrogen gas. A vacuum vessel in which a substrate is accommodated, an antenna for plasma generation provided opposite to the substrate in the vacuum vessel, and a first supply independently provided for supplying a gas into the vacuum vessel A plasma processing method using a plasma processing apparatus comprising a path and a second supply path, comprising:
Supplying a first gas into the vacuum vessel using the first supply path;
Supplying a second gas having reactivity with the first gas into the vacuum vessel using the second supply path.