JP2018137277A - Method for manufacturing copper-aluminum conjugant, method for manufacturing insulative circuit board, and method for manufacturing heat sink-attacked insulative circuit board - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reliably perform solid phase diffusion bonding at a lower temperature or in a shorter time than before, and to prevent peeling from occurring at a bonding interface between a copper member and an aluminum member even when a power cycle under severe conditions is loaded. Provided is a method for producing a copper / aluminum joined body capable of obtaining a copper / aluminum joined body excellent in power cycle reliability. A method of manufacturing a copper / aluminum joined body in which a copper member made of copper or a copper alloy and an aluminum member made of aluminum or an aluminum alloy are joined, and a zincate treatment is applied to a joint surface of the aluminum member. A zincate treatment step S02 to be performed, a copper member laminating step S03 of laminating the copper member on the joint surface of the zincate-treated aluminum member, and heating in a state where the aluminum member and the copper member are pressed in the laminating direction. And a solid phase diffusion bonding step S04 for solid phase diffusion bonding the aluminum member and the copper member. [Selection diagram] Figure 2

Description

  The present invention relates to a method for producing a copper / aluminum joined body in which a copper member made of copper or a copper alloy and an aluminum member made of aluminum or an aluminum alloy are joined, and a method for producing an insulated circuit board using the same, The present invention relates to a method for manufacturing an insulated circuit board with a heat sink.

The power module, the LED module, and the thermoelectric module have a structure in which a power semiconductor element, an LED element, and a thermoelectric element are bonded to an insulating circuit board in which a circuit layer made of a conductive material is formed on one surface of the insulating layer. .
For example, in a power semiconductor element for high power control used to control wind power generation, electric vehicles, hybrid vehicles, etc., since the amount of heat generation is large, as a substrate on which this is mounted, AlN (aluminum nitride), A ceramic substrate made of Al ₂ O ₃ (alumina), Si ₃ N ₄ (silicon nitride), and the like, and a circuit layer formed by bonding a metal plate having excellent conductivity to one surface of the ceramic substrate. Conventionally, power module substrates have been widely used. As the power joule substrate, a substrate in which a metal layer is formed by bonding a metal plate to the other surface of the ceramic substrate is also provided.

Here, as a circuit layer and a metal layer of an insulating circuit substrate (power module substrate), use of a joined body in which an aluminum layer and a copper layer are stacked is being studied. For example, Patent Documents 1 and 2 disclose a power module substrate having a two-layer structure in which a circuit layer or a metal layer includes an aluminum layer bonded to a ceramic substrate and a copper layer bonded to the aluminum layer by solid phase diffusion bonding. Has been proposed.
By making the circuit layer or the metal layer into a two-layer structure of an aluminum layer and a copper layer, the aluminum layer absorbs thermal strain generated at the time of heat cycle load and can suppress cracking of the ceramic substrate. It is possible to improve the heat dissipation characteristics by spreading in the surface direction.

Furthermore, in the above-mentioned power module, LED module, and thermoelectric module, in order to efficiently dissipate the heat generated from the semiconductor elements mounted on the circuit layer, the heat sink is attached to the metal layer side of the insulated circuit board. Insulated circuit boards are also used.
For example, Patent Document 3 proposes an insulating circuit board with a heat sink in which the metal layer is made of aluminum or an aluminum alloy, the heat sink is made of copper or a copper alloy, and the metal layer and the heat sink are solid phase diffusion bonded. ing.
In Patent Document 4, the metal layer and the heat sink are made of aluminum or an aluminum alloy, and a bonding material made of copper or copper alloy is disposed between them, and the metal layer and the bonding material, and the bonding material and the heat sink. An insulated circuit board with a heat sink bonded by solid phase diffusion bonding has been proposed.
Furthermore, in Patent Document 5, the metal layer and the heat sink are made of copper or a copper alloy, a bonding material made of aluminum or an aluminum alloy is disposed between them, and the metal layer and the bonding material, and the bonding material and the heat sink are arranged. An insulated circuit board with a heat sink bonded by solid phase diffusion bonding has been proposed.

JP2013-229545A JP 2014-160799 A JP 2014-099596 A JP 2014-060215 A JP 2014-060216 A

Recently, power semiconductor elements, LED elements, thermoelectric elements and the like mounted on an insulating circuit board tend to have a higher heat generation density, and the insulating circuit board has a more severe condition than the conventional one. Reliability for power cycle is required.
Here, as described above, in an insulated circuit board having a structure in which aluminum and copper are solid phase diffusion bonded and an insulated circuit board with a heat sink, a copper member is loaded when a power cycle under severer conditions than before is loaded. In some cases, peeling occurred at the bonding interface between the aluminum member and the aluminum member.
In addition, when the copper member and the aluminum member are reliably bonded by solid phase diffusion bonding, it is necessary to set the heating temperature relatively high and the retention time relatively long, which causes a large thermal There was a problem that the load was applied.

  The present invention has been made in view of the above-described circumstances, and is capable of solid phase diffusion bonding reliably at a lower temperature or in a shorter time than the prior art, and is a copper member even when a power cycle under severe conditions is loaded. Of producing a copper / aluminum bonded body capable of suppressing the occurrence of peeling at the bonded interface between the aluminum member and the aluminum member and obtaining a copper / aluminum bonded body having excellent power cycle reliability, and an insulating circuit using the same An object of the present invention is to provide a method for manufacturing a substrate and a method for manufacturing an insulated circuit board with a heat sink.

  In order to solve the above-described problems, a method for producing a copper / aluminum bonded body according to the present invention is a copper / aluminum bonded structure in which a copper member made of copper or a copper alloy and an aluminum member made of aluminum or an aluminum alloy are bonded. A zincate treatment step of performing a zincate treatment on a joint surface of the aluminum member and removing aluminum oxide on the joint surface; and a copper member on the joint surface of the aluminum member subjected to the zincate treatment. A copper member laminating step of laminating, and a solid phase diffusion bonding step of heating the aluminum member and the copper member in a state of being pressed in the laminating direction, and solid-phase diffusion bonding the aluminum member and the copper member. It is characterized by having.

According to the method for manufacturing a copper / aluminum bonded body having this structure, since the zincate treatment step for performing a zincate treatment is provided on the joint surface of the aluminum member, the aluminum oxide on the surface of the aluminum member is replaced with zinc to be strong. The aluminum oxide film can be removed. Then, by laminating the copper member on the aluminum member from which the aluminum oxide film has been removed and pressurizing and heating in the laminating direction, interdiffusion between Al atoms and Cu atoms is promoted at the bonding interface, and the aluminum member and the It becomes possible to solid-phase diffusion-bond the copper member firmly.
Therefore, even when a power cycle under conditions that are severer than before is applied, it is possible to suppress the occurrence of peeling at the bonding interface between the copper member and the aluminum member. Further, even when the heating temperature is set lower than the conventional one and the holding time is set shorter, the aluminum member and the copper member can be reliably solid phase diffusion bonded.
The zincate treatment causes Zn atoms to be present instead of aluminum oxide on the bonding surface of the aluminum member. This Zn atom diffuses to the aluminum member side in the temperature rising process, so the aluminum member and the There is no particular effect on the copper member and solid phase diffusion bonding.

  In the method for manufacturing an insulated circuit board according to the present invention, a circuit layer is formed by laminating an aluminum layer made of aluminum or an aluminum alloy and a copper layer made of copper or a copper alloy on one surface of the insulating layer. A method for manufacturing an insulated circuit board, wherein the circuit layer is formed by the above-described method for manufacturing a copper / aluminum bonded body.

  In the method for manufacturing an insulated circuit board according to the present invention, a circuit layer is formed on one surface of an insulating layer, and an aluminum layer made of aluminum or an aluminum alloy and a copper or copper alloy are formed on the other surface of the insulating layer. A method of manufacturing an insulating circuit board having a metal layer formed by laminating a copper layer made of a metal layer, wherein the metal layer is formed by the above-described method for manufacturing a copper / aluminum joined body. Yes.

  Furthermore, in the method for manufacturing an insulated circuit board according to the present invention, a circuit layer is formed by laminating an aluminum layer made of aluminum or an aluminum alloy and a copper layer made of copper or a copper alloy on one surface of the insulating layer. And a method of manufacturing an insulated circuit board in which a metal layer formed by laminating an aluminum layer made of aluminum or an aluminum alloy and a copper layer made of copper or a copper alloy is formed on the other surface of the insulating layer. The circuit layer and the metal layer are formed by the above-described method for manufacturing a copper / aluminum bonded body.

According to the method for manufacturing an insulating circuit board having these configurations, at least one or both of the circuit layer formed on one surface of the insulating layer and the metal layer formed on the other surface of the insulating layer are made of aluminum or An aluminum layer made of an aluminum alloy and a copper layer made of copper or a copper alloy are laminated, and the aluminum layer and the copper layer are solid phase diffusion bonded after a zincate treatment is performed on the bonding surface of the aluminum layer. Therefore, even when a power cycle under severer conditions than before is loaded, it is possible to suppress the occurrence of peeling at the bonding interface between the aluminum layer and the copper layer.
In addition, even if the heating temperature is lower than that of the prior art and the holding time is set shorter, the aluminum layer and the copper layer can be reliably solid-phase diffusion bonded. It is possible to reduce the thermal load acting on the.

  The method for manufacturing an insulated circuit board with a heat sink according to the present invention includes an insulating layer, a circuit layer formed on one surface of the insulating layer, a metal layer formed on the other surface of the insulating layer, and the metal layer. A heat sink disposed on the side, and a method of manufacturing an insulating circuit board with a heat sink, wherein either one of the bonding surface of the metal layer and the bonding surface of the heat sink is made of aluminum or an aluminum alloy, and Is made of copper or a copper alloy, and the metal layer and the heat sink are joined by the above-described method for producing a copper / aluminum joined body.

According to the method for manufacturing an insulated circuit board with a heat sink having this configuration, one of the bonding surface of the metal layer and the bonding surface of the heat sink is made of aluminum or an aluminum alloy, and the other is made of copper or a copper alloy. In addition, since the metal layer and the heat sink are subjected to a zincate treatment on the joint surface of the metal layer or the heat sink made of aluminum or an aluminum alloy, the metal layer and the heat sink are bonded by solid phase diffusion. Even when a power cycle is applied, it is possible to suppress the occurrence of peeling at the bonding interface between the metal layer and the heat sink.
In addition, even if the heating temperature is lower than that of the prior art and the holding time is set shorter, the metal layer and the heat sink can be reliably solid-phase diffusion bonded, so that it acts on the insulating layer during solid-phase diffusion bonding. Thermal load can be reduced.

  The method for manufacturing an insulated circuit board with a heat sink of the present invention includes an insulating layer, a circuit layer formed on one surface of the insulating layer, a metal layer formed on the other surface of the insulating layer, A heat sink disposed on the metal layer side, and a method of manufacturing an insulated circuit board with a heat sink, wherein one or both of the joint surface of the metal layer and the joint surface of the heat sink is aluminum or an aluminum alloy. A bonding material made of copper or a copper alloy is disposed between the bonding surface of the metal layer and the bonding surface of the heat sink, and the bonding surface of the metal layer made of aluminum or an aluminum alloy and the heat sink One or both of the joining surfaces and the joining material made of copper or a copper alloy are joined by the above-described method for producing a copper / aluminum joined body. It is.

According to the method for manufacturing an insulated circuit board with a heat sink having this configuration, one or both of the joint surface of the metal layer and the joint surface of the heat sink are made of aluminum or an aluminum alloy, and the joint surface of the metal layer A bonding material made of copper or a copper alloy is disposed between the bonding surface of the heat sink and the heat sink, and one or both of the bonding surface of the metal layer and the bonding surface of the heat sink made of aluminum or aluminum alloy, and copper Alternatively, since the solid state diffusion bonding is performed after the zincate treatment is performed on the bonding material made of a copper alloy, the metal layer and the heat sink of the metal layer and the heat sink are loaded even when a power cycle under severer conditions than before is applied. Generation | occurrence | production of peeling in the joining interface of any one or both and a joining material can be suppressed.
In addition, even if the heating temperature is lower than that of the prior art and the holding time is set shorter, either or both of the metal layer and the heat sink and the bonding material can be reliably solid-phase diffusion bonded. The thermal load acting on the insulating layer at the time of diffusion bonding can be reduced.

  Furthermore, the method for manufacturing an insulated circuit board with a heat sink according to the present invention includes an insulating layer, a circuit layer formed on one surface of the insulating layer, a metal layer formed on the other surface of the insulating layer, A heat sink disposed on the metal layer side, and a method of manufacturing an insulated circuit board with a heat sink, wherein one or both of the joint surface of the metal layer and the joint surface of the heat sink is copper or a copper alloy. A bonding material made of aluminum or an aluminum alloy is disposed between the bonding surface of the metal layer and the bonding surface of the heat sink, and the bonding surface of the metal layer made of copper or a copper alloy and the heat sink One or both of the bonding surfaces and the bonding material made of aluminum or aluminum alloy are bonded by the above-described method for manufacturing a copper / aluminum bonded body. It is set to.

According to the method of manufacturing an insulated circuit board with a heat sink having this configuration, one or both of the joint surface of the metal layer and the joint surface of the heat sink are made of copper or a copper alloy, and the joint surface of the metal layer A bonding material made of aluminum or an aluminum alloy is disposed between the bonding surface of the heat sink and the heat sink, and one or both of the bonding surface of the metal layer and the bonding surface of the heat sink made of copper or a copper alloy, and aluminum Alternatively, since the solid state diffusion bonding is performed after the zincate treatment is performed on the bonding material made of an aluminum alloy, the metal layer and the heat sink can be used even when a severe power cycle is applied. Generation | occurrence | production of peeling in the joining interface of any one or both and a joining material can be suppressed.
In addition, even if the heating temperature is lower than that of the prior art and the holding time is set shorter, either or both of the metal layer and the heat sink and the bonding material can be reliably solid-phase diffusion bonded. The thermal load acting on the insulating layer at the time of diffusion bonding can be reduced.

  According to the present invention, solid phase diffusion bonding can be reliably performed at a lower temperature or in a shorter time than conventional, and peeling occurs at the bonding interface between the copper member and the aluminum member even when a severe power cycle is applied. A method of manufacturing a copper / aluminum bonded body capable of suppressing the above and obtaining a copper / aluminum bonded body excellent in power cycle reliability, a method of manufacturing an insulating circuit board using the same, and an insulating circuit board with a heat sink A manufacturing method can be provided.

It is sectional drawing which shows the insulated circuit board and power module which were manufactured by the manufacturing method of the insulated circuit board which is the 1st Embodiment of this invention. It is a flowchart which shows the manufacturing method of the insulated circuit board and power module which are shown in FIG. It is a flowchart which shows the procedure of the zincate process process in the manufacturing method of the insulated circuit board shown in FIG. It is explanatory drawing which shows the manufacturing method of the insulated circuit board shown in FIG. It is sectional drawing which shows the insulated circuit board with a heat sink and the power module which were manufactured by the manufacturing method of the insulated circuit board with a heat sink which is the 2nd Embodiment of this invention. It is a flowchart which shows the manufacturing method of the insulated circuit board with a heat sink shown in FIG. It is explanatory drawing which shows the manufacturing method of the insulated circuit board with a heat sink shown in FIG. It is explanatory drawing which shows the manufacturing method of the insulated circuit board with a heat sink shown in FIG. It is sectional drawing which shows the insulated circuit board with a heat sink and the power module which were manufactured by the manufacturing method of the insulated circuit board with a heat sink which is the 3rd Embodiment of this invention. It is a flowchart which shows the manufacturing method of the insulated circuit board with a heat sink shown in FIG. It is explanatory drawing which shows the manufacturing method of the insulated circuit board with a heat sink shown in FIG. It is a graph which shows the result of an Example. (A) is a conventional example, and (b) is an example of the present invention.

  Embodiments of the present invention will be described below with reference to the drawings. Each embodiment described below is specifically described for better understanding of the gist of the invention, and does not limit the present invention unless otherwise specified. In addition, in the drawings used in the following description, in order to make the features of the present invention easier to understand, there is a case where a main part is shown in an enlarged manner for convenience, and the dimensional ratio of each component is the same as the actual one. Not necessarily.

<First Embodiment>
FIG. 1 shows an insulated circuit board 10 manufactured using the method for manufacturing a copper / aluminum bonded body according to the first embodiment of the present invention, and a power module 1 using the insulated circuit board 10.
The copper / aluminum bonded body according to the present embodiment includes a circuit layer 12 in which an aluminum layer 12A as an aluminum member and a copper layer 12B as a copper member are bonded in the insulated circuit board 10 shown in FIG. 1, and an aluminum layer as an aluminum member. The metal layer 13 is formed by bonding a copper layer 13B as 13A and a copper member.

  A power module 1 shown in FIG. 1 includes an insulating circuit board 10, a power semiconductor element 3 bonded to one surface (upper surface in FIG. 1) of the insulating circuit board 10 via a first solder layer 2, and an insulating circuit. A heat sink 41 bonded to the lower side of the substrate 10 via a second solder layer 50. The insulated circuit board 10 to which the heat sink 41 is bonded is the insulated circuit board 40 with a heat sink in the present embodiment.

  The power semiconductor element 3 is made of a semiconductor material such as Si. The first solder layer 2 that joins the insulating circuit board 10 and the power semiconductor element 3 is made of, for example, Sn—Ag, Sn—Cu, Sn—In, or Sn—Ag—Cu solder (so-called lead-free). Solder material).

  The heat sink 41 is for dissipating heat on the insulated circuit board 10 side. The heat sink 41 is made of copper or a copper alloy, and is made of oxygen-free copper in this embodiment. The second solder layer 50 that joins the insulating circuit board 10 and the heat sink 41 is, for example, a Sn—Ag, Sn—Cu, Sn—In, or Sn—Ag—Cu solder material (so-called lead-free solder material). ).

  As shown in FIG. 1, the insulated circuit board 10 according to the present embodiment is disposed on an insulating layer (ceramic substrate 11) and one surface (upper surface in FIG. 1) of the insulating layer (ceramic substrate 11). And a metal layer 13 disposed on the other surface (lower surface in FIG. 1) of the insulating layer (ceramic substrate 11).

The insulating layer is made of a highly insulating ceramic substrate 11, for example, AlN (aluminum nitride), Si ₃ N ₄ (silicon nitride), Al ₂ O ₃ (alumina), or the like. In the present embodiment, the insulating layer is a ceramic substrate 11 made of AlN (aluminum nitride). In addition, the thickness of the insulating layer (ceramic substrate 11) is set within a range of 0.2 to 1.5 mm, and in this embodiment is set to 0.635 mm.

As shown in FIG. 1, the circuit layer 12 has an aluminum layer 12A disposed on one surface of the ceramic substrate 11, and a copper layer 12B laminated on one surface of the aluminum layer 12A. Yes.
Here, the thickness of the aluminum layer 12A in the circuit layer 12 is set within a range of 0.1 mm or more and 1.0 mm or less, and is set to 0.4 mm in the present embodiment.
Further, the thickness of the copper layer 12B in the circuit layer 12 is set within a range of 0.1 mm or more and 6.0 mm or less, and is set to 1.0 mm in the present embodiment.

As shown in FIG. 1, the metal layer 13 has an aluminum layer 13A disposed on the other surface of the ceramic substrate 11, and a copper layer 13B laminated on the other surface of the aluminum layer 13A. Yes.
Here, the thickness of the aluminum layer 13A in the metal layer 13 is set within a range of 0.1 mm to 3.0 mm, and is set to 0.4 mm in the present embodiment.
Further, the thickness of the copper layer 13B in the metal layer 13 is set within a range of 0.1 mm or more and 6.0 mm or less, and is set to 1.0 mm in the present embodiment.

Here, as shown in FIG. 4, the aluminum layers 12A and 13A are formed by joining aluminum plates 22A and 23A made of aluminum and an aluminum alloy to one surface and the other surface of the ceramic substrate 11, respectively. Yes.
In the present embodiment, the aluminum plates 22A and 23A to be the aluminum layers 12A and 13A are made of aluminum (2N aluminum) having a purity of 99 mass% or more.

The copper layers 12B and 13B are formed by joining copper plates 22B and 23B made of copper or a copper alloy to the aluminum layers 12A and 13A.
In this embodiment, the copper plates 22B and 23B constituting the copper layers 12B and 13B are oxygen-free copper rolled plates.
Here, the aluminum layers 12A and 13A and the copper layers 12B and 13B are solid-phase diffusion bonded, respectively.

  Next, the manufacturing method of the insulated circuit board 10 to which the manufacturing method of the joined body which is this embodiment is applied is demonstrated with reference to FIGS.

(Aluminum layer forming step S01)
First, as shown in FIG. 4, an aluminum plate 22 </ b> A that becomes the aluminum layer 12 </ b> A is laminated on one surface (the upper surface in FIG. 4) of the ceramic substrate 11 with an Al—Si brazing material 24 interposed therebetween. On the other surface (the lower surface in FIG. 4), an aluminum plate 23A to be an aluminum layer 13A is laminated via an Al—Si based brazing material 25. Next, under vacuum conditions (10 ⁻⁶ Pa or more and 10 ⁻³ Pa or less), a pressure of 1 to 35 kgf / cm ² is applied in the stacking direction at a heating temperature of 600 ° C. or more and 640 ° C. or less for 5 minutes or more. The aluminum plate 22A, the ceramic substrate 11, and the aluminum plate 23A are joined by holding for 180 minutes or less to form the aluminum layers 12A and 13A.

(Jincate treatment step S02)
Next, a zincate process is performed on the joint surfaces of the aluminum layers 12A and 13A with the copper plates 22B and 23B. The zincate processing step S02 will be described with reference to the flowchart of FIG.
In the zincate treatment step S02, as shown in FIG. 3, first, the bonding surfaces are degreased (degreasing step S21).

Next, by immersing in a zincate treatment solution containing NaOH and zinc oxide, the bonded surface after degreasing is etched to remove the aluminum oxide film on the bonded surface, and the bonded surface from which the aluminum oxide film has been removed Is replaced with zinc (first zinc replacement step S22).
In the first zinc replacement step S22, the aluminum oxide film on the bonding surface is removed by etching treatment, so that a protruding portion protruding outward is exposed on the bonding surface, and the zinc particles start from this protruding portion. Will grow.

  Next, the substituted zinc particles are peeled off (peeling step S23). In the peeling step S23, the nitric acid is used to dissolve the zinc particles, and a thin and uniform oxide film of about 0.3 mm is formed on the joint surface.

Next, it is immersed again in a zincate treatment solution containing NaOH and zinc oxide to remove the oxide film formed on the joint surface, and the joint surface from which the oxide film has been removed is replaced with zinc (second zinc replacement step S24). .
In the second zinc replacement step S24, the uniform oxide film on the joint surface is removed by the etching process, and a thin and uniform zinc film is formed.

(Copper plate lamination step S03)
Next, copper plates 22B and 23B to be copper layers 12B and 13B are laminated on the joint surfaces of the aluminum layers 12A and 13A that have been subjected to the zincate treatment.

(Solid phase diffusion bonding step S04)
Next, the laminated copper plate 22B, the ceramic substrate 11 on which the aluminum layers 12A and 13A are formed, and the copper plate 23B are placed in a vacuum furnace while being pressurized in the laminating direction, and heated to a predetermined temperature. Thus, the copper plate 22B and the aluminum layer 12A, and the copper plate 23B and the aluminum layer 13A are solid phase diffusion bonded.

Degree of vacuum in the vacuum furnace in the solid phase diffusion bonding step S04 ^is within a range of not less than ¹⁰ -6 Pa or more ¹⁰ -3 Pa, applied load is 1 kgf / cm ² or more 35 kgf / cm ² or less in the range in the stacking direction It is said that.
The heating temperature is in the range of 480 ° C. or more and less than 548 ° C. Preferably, the temperature is in the range of 500 ° C. or more and less than 548 ° C.
The holding time at the heating temperature is preferably 5 minutes or more and 60 minutes or less. Preferably it is good to set it within the range of 30 minutes or more and 60 minutes or less.

The zincate treatment step S02 causes Zn atoms to exist on the bonding surfaces of the aluminum layers 12A and 13A. The Zn atoms are present on the side of the aluminum layers 12A and 13A in the temperature rising process in the solid phase diffusion bonding step S04. Therefore, the solid phase diffusion bonding between the aluminum layers 12A and 13A and the copper layers 12B and 13B is not particularly affected.
As described above, the insulated circuit board 10 according to the present embodiment is manufactured.

(Heat sink joining step S05)
Next, a heat sink 41 is laminated on the metal layer 13 of the insulated circuit board 10 via a solder material, and soldered in a reduction furnace.
As described above, the insulated circuit board with a heat sink 40 according to this embodiment is manufactured.

(Power semiconductor bonding step S06)
Next, the power semiconductor element 3 is laminated on one surface of the circuit layer 12 (the surface of the copper layer 12B) via a solder material, and soldered in a reduction furnace.
As described above, the power module 1 according to the present embodiment is manufactured.

  In the manufacturing method of the insulated circuit board 10 according to the present embodiment configured as described above, the circuit layer 12 formed on one surface of the ceramic substrate 11 and the metal layer 13 formed on the other surface are: A zincate treatment step in which aluminum layers 12A and 13A made of aluminum or an aluminum alloy and copper layers 12B and 13B made of copper or a copper alloy are laminated and a joint surface of the aluminum layers 12A and 13A is subjected to a zincate treatment. Since S02 is included, the aluminum oxide film on the bonding surfaces of the aluminum layers 12A and 13A can be removed, and in the solid phase diffusion bonding step S04, the mutual diffusion of Al atoms and Cu atoms at the bonding interface is promoted. Thus, the solid phase diffusion bonding of the aluminum layers 12A and 13A and the copper layers 12B and 13B can be performed.

  Therefore, even when a power cycle under conditions that are severer than before is applied, it is possible to suppress the occurrence of peeling at the bonding interface between the aluminum layers 12A and 13A and the copper layers 12B and 13B. Further, even if the heating temperature in the solid phase diffusion bonding step S04 is set low and the holding time is set short, the aluminum layers 12A, 13A and the copper layers 12B, 13B can be reliably solid phase diffusion bonded. The thermal load on the ceramic substrate 11 and the like in the phase diffusion bonding step S04 can be suppressed low.

Further, according to the insulated circuit board 10 of the present embodiment, the aluminum layers 12A and 13A having a relatively small deformation resistance are formed on one surface and the other surface of the ceramic substrate 11, so that a cooling cycle is applied. It is possible to absorb the thermal stress generated at the time of deformation by deformation of the aluminum layers 12A and 13A, and to prevent the ceramic substrate 11 from being cracked.
Furthermore, since the copper layers 12B and 13B having a relatively large deformation resistance are formed on the surface of the aluminum layers 12A and 13A opposite to the ceramic substrate 11, the circuit layer 12 is applied when a cooling cycle is applied. Further, deformation of the surface of the metal layer 13 is suppressed, and cracks are generated in the first solder layer 2 that joins the circuit layer 12 and the power semiconductor element 3 and in the second solder layer 50 that joins the metal layer 13 and the heat sink 41. It can suppress and can improve joint reliability. Moreover, in the copper layers 12B and 13B, heat can be spread in the surface direction, and the heat dissipation characteristics of the insulated circuit board 10 can be improved.

<Second Embodiment>
FIG. 5 shows an insulated circuit board 140 with a heat sink manufactured by using the method for manufacturing a copper / aluminum bonded body according to the second embodiment of the present invention, and a power module 101 using this insulated circuit board 140 with a heat sink. Indicates. In addition, the same code | symbol is attached | subjected to the member same as 1st Embodiment, and detailed description is abbreviate | omitted.
In the copper / aluminum bonded body according to the present embodiment, the metal layer 113 and the heat sink 141 as the aluminum member and the bonding material 150 as the copper member are bonded in the insulated circuit board with heat sink 140 shown in FIG. It is supposed to be.

  A power module 101 shown in FIG. 5 includes an insulated circuit board 140 with a heat sink, and a power semiconductor element 3 joined to one surface (upper surface in FIG. 5) of the insulated circuit board 140 with a heat sink via a first solder layer 2. And. The insulated circuit board 140 with a heat sink according to the present embodiment includes an insulated circuit board 110 and a heat sink 141 disposed on the metal layer 113 side of the insulated circuit board 110.

  The heat sink 141 is for dissipating heat on the insulated circuit board 110 side. The heat sink 141 is preferably made of a material having good thermal conductivity. In this embodiment, the heat sink 141 is made of aluminum or an aluminum alloy, and more specifically, A6063.

  As shown in FIG. 5, the insulating circuit board 110 includes a ceramic substrate 11 as an insulating layer, a circuit layer 112 disposed on one surface (the upper surface in FIG. 5) of the ceramic substrate 11, and the ceramic substrate 11. And a metal layer 113 disposed on the other surface (the lower surface in FIG. 5).

  As shown in FIG. 7, the circuit layer 112 is formed by joining an aluminum plate 122 made of aluminum or an aluminum alloy to one surface (the upper surface in FIG. 7) of the ceramic substrate 11. In this embodiment, the circuit layer 112 is formed by joining a rolled plate of aluminum (2N aluminum) having a purity of 99% or more to the ceramic substrate 11. Note that the thickness of the aluminum plate 122 serving as the circuit layer 112 is set within a range of 0.1 mm or more and 1.0 mm or less, and is set to 0.6 mm in the present embodiment.

  As shown in FIG. 7, the metal layer 113 is formed by joining an aluminum plate 123 to the other surface (the lower surface in FIG. 7) of the ceramic substrate 11. In this embodiment, the aluminum plate 123 constituting the metal layer 113 is a rolled plate of aluminum (4N aluminum) having a purity of 99.99 mass% or more. In addition, the thickness of the aluminum plate 123 to be joined is set within a range of 0.1 mm to 3.0 mm, and is set to 1.6 mm in this embodiment.

And in the insulated circuit board 140 with a heat sink which is this embodiment, as shown in FIG. 5, the metal layer 113 and the heat sink 141 are joined via the joining material 150 which consists of copper or a copper alloy.
Here, the metal layer 113 and the bonding material 150, and the bonding material 150 and the heat sink 141 are solid phase diffusion bonded, respectively.

  Next, the manufacturing method of the insulated circuit board 140 with a heat sink to which the manufacturing method of the copper / aluminum bonded body according to the present embodiment is applied will be described with reference to FIGS.

(Circuit layer and metal layer forming step S101)
First, as shown in FIG. 7, an aluminum plate 122 that becomes the circuit layer 112 is laminated on one surface (the upper surface in FIG. 7) of the ceramic substrate 11 with an Al—Si brazing material 24 interposed therebetween, and the ceramic substrate 11. On the other surface (the lower surface in FIG. 7), an aluminum plate 123 to be the metal layer 113 is laminated via an Al—Si based brazing material 25. Next, under vacuum conditions (10 ⁻⁶ Pa or more and 10 ⁻³ Pa or less), a pressure of 1 to 35 kgf / cm ² is applied in the stacking direction at a heating temperature of 600 ° C. or more and 640 ° C. or less for 5 minutes or more. Holding for 180 minutes or less, the aluminum plate 122, the ceramic substrate 11, and the aluminum plate 123 are joined to form the circuit layer 112 and the metal layer 113.
As described above, the insulated circuit board 110 according to the present embodiment is manufactured.

(Jincate processing step S102)
Next, a zincate process is performed on the bonding surface of the metal layer 113 with the bonding material 150 and the bonding surface of the heat sink 141 with the bonded body 150. This zincate treatment step is carried out using a zincate treatment solution containing NaOH and zinc oxide, as in the first embodiment.
By this zincate treatment step S102, the aluminum oxide film is removed on the bonding surface of the metal layer 113 with the bonding material 150 and the bonding surface of the heat sink 141 with the bonding material 150, and a thin and uniform zinc film is formed. It will be.

(Jointing material lamination step S103)
Next, as shown in FIG. 8, a zincate-treated metal layer 113 and a heat sink 141 are laminated with a bonding material 150 made of copper or a copper alloy interposed therebetween.
In the present embodiment, the bonding material 150 is a rolled plate of oxygen-free copper, and the thickness thereof is in the range of 0.05 mm to 3.0 mm.

(Solid phase diffusion bonding step S104)
Next, the laminated insulating circuit board 110, the bonding material 150, and the heat sink 141 are placed in a vacuum furnace while being pressurized in the stacking direction, and heated to a predetermined temperature, whereby the metal layer 113 and the bonding material 150 are heated. The bonding material 150 and the heat sink 141 are bonded by solid phase diffusion bonding.

Degree of vacuum in the vacuum furnace in the solid phase diffusion bonding step S104 ^is within the range of not less than ¹⁰ -6 Pa or more ¹⁰ -3 Pa, applied load is 1 kgf / cm ² or more 35 kgf / cm ² or less in the range in the stacking direction It is said that.
The heating temperature is in the range of 480 ° C. or more and less than 548 ° C. Preferably, the temperature is in the range of 500 ° C. or more and less than 548 ° C.
The holding time at the heating temperature is preferably 5 minutes or more and 60 minutes or less. Preferably it is good to set it within the range of 30 minutes or more and 60 minutes or less.
As described above, the insulating circuit board with heat sink 140 according to the present embodiment is manufactured.

(Power semiconductor bonding step S105)
Next, the power semiconductor element 3 is laminated on one surface of the circuit layer 112 via a solder material, and soldered in a reduction furnace.
As described above, the power module 101 according to the present embodiment is manufactured.

  In the manufacturing method of the insulated circuit board with heat sink 140 according to the present embodiment configured as described above, the metal layer 113 and the heat sink 141 of the insulated circuit board 110 are each made of aluminum or an aluminum alloy, and these metal layers A bonding material 150 made of copper or a copper alloy is interposed between the metal layer 113 and the heat sink 141. After the zincate treatment is performed on the bonding surface of the metal layer 113 and the heat sink 141, the metal layer 113 and the bonding material 150 are bonded. Since the material 150 and the heat sink 141 are solid phase diffusion bonded, the aluminum oxide on the bonding surface is removed, and the interdiffusion between Al atoms and Cu atoms at the bonding interface is promoted, so that the metal layer 113 and the bonding material 150 are bonded. In addition, the bonding material 150 and the heat sink 141 can be firmly solid-phase diffusion bonded.

Therefore, even when a power cycle having a severer condition than before is loaded, it is possible to suppress the occurrence of peeling at the bonding interface between the metal layer 113 and the bonding material 150 and between the bonding material 150 and the heat sink 141, and the insulating circuit The heat on the substrate 110 side can be dissipated to the heat sink 141 side.
Further, even if the heating temperature in the solid phase diffusion bonding step S104 is set low and the holding time is set short, the metal layer 113 and the bonding material 150, and the bonding material 150 and the heat sink 141 can be reliably solid phase diffusion bonded. It is possible to reduce the thermal load on the ceramic substrate 11 and the like in the solid phase diffusion bonding step S104.

<Third Embodiment>
FIG. 9 shows an insulated circuit board 240 with a heat sink manufactured by using the method for manufacturing a copper / aluminum bonded body according to the third embodiment of the present invention, and a power module 201 using the insulated circuit board 240 with a heat sink. Indicates. In addition, the same code | symbol is attached | subjected to the member same as 1st Embodiment and 2nd Embodiment, and detailed description is abbreviate | omitted.
The copper / aluminum bonded body in this embodiment is obtained by bonding the metal layer 113 as the aluminum member and the heat sink 241 as the copper member in the insulating circuit board with heat sink 240 shown in FIG. Yes.

The power module 201 shown in FIG. 9 includes an insulated circuit board 240 with a heat sink, and a power semiconductor element 3 joined to one surface (upper surface in FIG. 9) of the insulated circuit board 240 with a heat sink via a first solder layer 2. And.
The insulated circuit board with heat sink 240 according to the present embodiment includes the insulated circuit board 110 and the heat sink 241 disposed on the metal layer 113 side of the insulated circuit board 110.

  The heat sink 241 is for dissipating heat on the insulated circuit board 110 side. The heat sink 241 is preferably made of a material having good thermal conductivity. In the present embodiment, the heat sink 241 is made of copper or a copper alloy, and more specifically, an oxygen-free copper rolled plate. .

  In the insulated circuit board with heat sink 240 according to this embodiment, as shown in FIG. 9, the metal layer 113 made of aluminum or aluminum alloy and the heat sink 241 made of copper or copper alloy are directly solid-phase diffused. It is joined.

  Next, the manufacturing method of the insulated circuit board 240 with a heat sink to which the manufacturing method of the copper / aluminum bonded body according to this embodiment is applied will be described with reference to FIGS.

(Circuit layer and metal layer forming step S201)
First, as shown in FIG. 11, an aluminum plate 122 that becomes the circuit layer 112 is laminated on one surface (the upper surface in FIG. 11) of the ceramic substrate 11 with an Al—Si brazing material 24 interposed therebetween, and the ceramic substrate 11. On the other surface (the lower surface in FIG. 11), an aluminum plate 123 to be the metal layer 113 is laminated via an Al—Si based brazing material 25.
Next, under vacuum conditions (10 ⁻⁶ Pa or more and 10 ⁻³ Pa or less), a pressure of 1 to 35 kgf / cm ² is applied in the stacking direction at a heating temperature of 600 ° C. or more and 640 ° C. or less for 5 minutes or more. The aluminum plate 122, the ceramic substrate 11, and the aluminum plate 123 are joined together by holding for 180 minutes or less to form the circuit layer 112 and the metal layer 113.
As described above, the insulated circuit board 110 according to the present embodiment is manufactured.

(Jincate processing step S202)
Next, a zincate process is performed on the joint surface of the metal layer 113 with the heat sink 241. This zincate treatment step is carried out using a zincate treatment solution containing NaOH and zinc oxide, as in the first embodiment.
By this zincate treatment step S202, the aluminum oxide film is removed from the joint surface of the metal layer 113 with the heat sink 241 to form a thin and uniform zinc film.

(Heat sink lamination step S203)
Next, as shown in FIG. 11, a heat sink 241 is laminated on the metal layer 113 that has been subjected to the zincate treatment.

(Solid phase diffusion bonding step S204)
Next, the laminated insulating circuit board 110 and the heat sink 241 are placed in a vacuum furnace while being pressurized in the stacking direction, and heated to a predetermined temperature, whereby the metal layer 113 and the heat sink 241 are solid-phase diffusion bonded. To do.

Degree of vacuum in the vacuum furnace in the solid phase diffusion bonding step S204 ^is within the range of not less than ¹⁰ -6 Pa or more ¹⁰ -3 Pa, applied load is 1 kgf / cm ² or more 35 kgf / cm ² or less in the range in the stacking direction It is said that.
The heating temperature is in the range of 480 ° C. or more and less than 548 ° C. Preferably, the temperature is in the range of 500 ° C. or more and less than 548 ° C.
The holding time at the heating temperature is preferably 5 minutes or more and 60 minutes or less. Preferably it is good to set it within the range of 30 minutes or more and 60 minutes or less.
As described above, the insulated circuit board with heat sink 240 according to the present embodiment is manufactured.

(Power semiconductor bonding step S205)
Next, the power semiconductor element 3 is laminated on one surface of the circuit layer 112 via a solder material, and soldered in a reduction furnace.
As described above, the power module 201 according to the present embodiment is manufactured.

  In the manufacturing method of the insulated circuit board with heat sink 240 according to the present embodiment configured as described above, the metal layer 113 of the insulated circuit board 110 and the heat sink 241 are directly solid-phase diffusion bonded, and the metal Since the metal layer 113 and the heat sink 241 are solid phase diffusion bonded after performing the zincate process on the bonding surface of the layer 113 with the heat sink 241, the aluminum oxide on the bonding surface is removed, and the Al at the bonding interface is removed. Interdiffusion between atoms and Cu atoms is promoted, and the metal layer 113 and the heat sink 241 can be firmly solid-phase diffusion bonded.

Therefore, even when a power cycle having a severer condition than before is applied, it is possible to suppress the occurrence of peeling at the bonding interface between the metal layer 113 and the heat sink 241, and the heat on the insulating circuit board 110 side can be reduced. The heat can be efficiently radiated to the side.
Further, even when the heating temperature in the solid phase diffusion bonding step S204 is set low and the holding time is set short, the metal layer 113 and the heat sink 241 can be reliably solid phase diffusion bonded, and the solid phase diffusion bonding step S204. The thermal load on the ceramic substrate 11 and the like can be kept low.

  As mentioned above, although embodiment of this invention was described, this invention is not limited to this, It can change suitably in the range which does not deviate from the technical idea of the invention.

  For example, in the present embodiment, the power module is configured by mounting the power semiconductor element on the insulating circuit board. However, the present invention is not limited to this. For example, an LED module may be configured by mounting LED elements on a circuit layer of an insulated circuit board, or a thermoelectric module may be configured by mounting thermoelectric elements on a circuit layer of an insulated circuit board.

Moreover, in the insulated circuit board of 1st Embodiment, although demonstrated as what was made into the structure where both the circuit layer and the metal layer laminated | stacked the aluminum layer and the copper layer, it is not limited to this Any one of the circuit layer and the metal layer may have a structure in which an aluminum layer and a copper layer are laminated.
Furthermore, in the insulated circuit board of the first embodiment, the metal layer is formed. However, if the circuit layer has a structure in which an aluminum layer and a copper layer are laminated, the metal layer is not formed. It may be a thing.

  In the insulated circuit board with a heat sink according to the second embodiment, the joining surface of the metal layer and the heat sink is made of aluminum or an aluminum alloy, and a joining material made of copper or a copper alloy is interposed therebetween. The metal layer and the bonding material, and the bonding material and the heat sink have been described as solid phase diffusion bonding, but the present invention is not limited to this, and the bonding surface of the metal layer and the heat sink is made of copper or a copper alloy. In this case, a bonding material made of aluminum or an aluminum alloy may be interposed between the metal layer and the bonding material, and the bonding material and the heat sink may be solid phase diffusion bonded. In this case, the zincate treatment is performed on the bonding surface of the bonding material before the solid phase diffusion bonding.

  Furthermore, in the insulated circuit board with a heat sink according to the second embodiment, the metal layer and the bonding material, and the bonding material and the heat sink are described as solid phase diffusion bonded, but the present invention is not limited to this. Any one of the layer and the bonding material, or the bonding material and the heat sink may be solid phase diffusion bonded. In this case, a zincate process may be performed on the bonding surface of the aluminum member that is solid phase diffusion bonded to the copper member.

  In the insulated circuit board with a heat sink of the third embodiment, the metal layer is made of aluminum or an aluminum alloy, the heat sink is made of copper or a copper alloy, and the metal layer and the heat sink are Although described as a direct solid phase diffusion bonding, it is not limited to this, the metal layer is made of copper or a copper alloy, the heat sink is made of aluminum or an aluminum alloy, and the metal The layer and the heat sink may be directly solid phase diffusion bonded. In this case, the zincate process is performed on the bonding surface of the heat sink before the solid phase diffusion bonding.

Furthermore, in this embodiment, although the ceramic substrate was demonstrated as an insulating layer, it is not limited to this, You may comprise an insulating layer with insulating resin etc.
Moreover, although it demonstrated as what joins a ceramic substrate and an aluminum plate using a brazing material, it is not limited to this, You may join by a transient liquid phase joining method (TLP), Ag paste, etc.

  Furthermore, the structure and material of the heat sink are not limited to those exemplified in the embodiment. For example, it may be provided with a flow path through which the cooling medium flows. Moreover, you may be comprised with the aluminum composite material (for example, AlSiC) etc. in which the carbonaceous member was impregnated with aluminum. Also in this aluminum composite material, solid phase diffusion bonding can be performed with a metal layer or a bonding material if a skin layer made of aluminum or an aluminum alloy is formed on the bonding surface.

Below, the result of the confirmation experiment performed in order to confirm the effect of this invention is demonstrated.
According to the procedure described in the flow chart of FIG. 4, solid phase diffusion bonding was performed under the conditions shown in FIG. 12, and power modules with heat sinks of the invention example and the conventional example were manufactured. The pressing load in the stacking direction was 8 kgf / cm ² . In the conventional example, no zincate treatment was performed.
The ceramic substrate was made of AlN, and had a size of 40 mm × 40 mm and a thickness of 0.635 mm.
Moreover, the aluminum layer of a circuit layer and a metal layer was comprised with the rolling plate of 4N aluminum, and used the thing of 37 mm x 37 mm and thickness 0.1mm.
The copper layer of the circuit layer and the metal layer was composed of a rolled plate of oxygen-free copper, and a layer of 37 mm × 37 mm and a thickness of 0.3 mm was used.
The metal layer was composed of a 4N aluminum rolled plate, and was 37 mm × 37 mm and 1.6 mm thick.
The heat sink was composed of a rolled plate of A6063 alloy, and a 50 mm × 50 mm, 5 mm thick one was used.
Further, the solid phase diffusion bonding was performed in a range where the pressure in the vacuum heating furnace was 10 ⁻⁶ Pa or more and 10 ⁻³ Pa or less.
As the semiconductor element, an IGBT element having a size of 12.5 mm × 9.5 mm and a thickness of 0.25 mm was used.

(Power cycle test)
The power cycle test was performed by using an Sn-Ag-Cu solder to solder an IGBT element to a copper layer and bonding a connection wiring made of an aluminum alloy to form a power module with a heat sink. With the cooling water temperature and flow rate in the heat sink constant, the IGBT element is energized for 10 cycles of energization (ON) at an element surface temperature of 160 ° C. and non-energization (OFF) at an element surface temperature of 60 ° C. The power cycle test was performed by repeating the adjustment every second and repeating this 150,000 times.
The bonding rate at the interface between the aluminum layer and the copper layer was measured before and after the heat cycle test and before and after the power cycle test.

(Evaluation of bonding rate at the interface between the aluminum layer and the copper layer)
For the power module with a heat sink after the power cycle test, the bonding rate at the interface between the aluminum layer and the copper layer was evaluated using an ultrasonic flaw detector and calculated from the following formula. Here, the initial bonding area is the area to be bonded before bonding, that is, the area of the aluminum layer and the copper layer in this embodiment. In the ultrasonic flaw detection image, peeling is indicated by a white portion in the joint, and thus the area of the white portion was taken as the peeling area.
(Bonding rate) = {(initial bonding area) − (peeling area)} / (initial bonding area)

  The evaluation results are shown in FIG. In FIG. 12, “◎” indicates that the joining rate after the power cycle test is 90% or more, and “◯” indicates that the joining rate after the power cycle test is 80% or more and less than 90%, and the joining after the power cycle test. Those with a rate of less than 80% were indicated as “x”.

In the example of the present invention in which the zincate treatment was performed (FIG. 12B), compared with the comparative example in which the zincate treatment was not performed (FIG. 12A), the bonding after the power cycle test was performed under the same bonding conditions. It is confirmed that the rate is getting better.
In the present invention example in which the zincate treatment was performed, even when the bonding temperature is low or the holding time is short, it is confirmed that the bonding rate is high and solid phase diffusion bonding is surely performed. .

  From the above, according to the example of the present invention, it is possible to suppress the occurrence of delamination at the bonding interface between the copper layer and the aluminum layer even when a power cycle under a severer condition than before is loaded. Insulated circuit board with excellent properties could be obtained.

1, 101, 201 Power module 3 Power semiconductor element 10 Insulating circuit board 11 Ceramic substrate 12 Circuit layer 13 Metal layers 12A, 13A Aluminum layer (aluminum member)
12B, 13B Copper layer (copper member)
110 Insulated circuit board 113 Metal layer (aluminum member)
140 Insulated circuit board 141 with heat sink Heat sink (aluminum member)
150 Bonding material (copper member)
240 Insulated circuit board 241 with heat sink Heat sink (copper member)
S02, S102, S202 Jincate treatment step S03 Copper plate lamination step (copper member lamination step)
S04, S104, S204 Solid phase diffusion bonding step S103 Bonding material laminating step (copper member laminating step)
S203 Heat sink lamination process (copper member lamination process)

Claims (7)

A copper / aluminum joint manufacturing method in which a copper member made of copper or a copper alloy and an aluminum member made of aluminum or an aluminum alloy are joined,
A zincate treatment step for carrying out a zincate treatment on the joint surface of the aluminum member;
A copper member laminating step of laminating the copper member on the joint surface of the aluminum member subjected to the zincate treatment;
A solid phase diffusion bonding step in which the aluminum member and the copper member are heated in a state of being pressurized in the stacking direction, and the aluminum member and the copper member are solid phase diffusion bonded;
The manufacturing method of the copper / aluminum joined body characterized by the above-mentioned. A method of manufacturing an insulated circuit board in which a circuit layer formed by laminating an aluminum layer made of aluminum or an aluminum alloy and a copper layer made of copper or a copper alloy is formed on one surface of the insulating layer,
The method for manufacturing an insulated circuit board, wherein the circuit layer is formed by the method for manufacturing a copper / aluminum bonded body according to claim 1. A metal in which a circuit layer is formed on one surface of an insulating layer and an aluminum layer made of aluminum or an aluminum alloy and a copper layer made of copper or a copper alloy are laminated on the other surface of the insulating layer A method of manufacturing an insulated circuit board on which a layer is formed,
The method for manufacturing an insulated circuit board, wherein the metal layer is formed by the method for manufacturing a copper / aluminum bonded body according to claim 1. A circuit layer is formed by laminating an aluminum layer made of aluminum or an aluminum alloy and a copper layer made of copper or a copper alloy on one surface of the insulating layer, and the other surface of the insulating layer is made of aluminum or A method for producing an insulated circuit board having a metal layer formed by laminating an aluminum layer made of an aluminum alloy and a copper layer made of copper or a copper alloy,
The method for producing an insulated circuit board, wherein the circuit layer and the metal layer are formed by the method for producing a copper / aluminum bonded body according to claim 1. A heat sink comprising: an insulating layer; a circuit layer formed on one surface of the insulating layer; a metal layer formed on the other surface of the insulating layer; and a heat sink disposed on the metal layer side. A method of manufacturing an insulated circuit board with a cover, comprising:
Either one of the joining surface of the metal layer and the joining surface of the heat sink is composed of aluminum or an aluminum alloy, and the other is composed of copper or a copper alloy,
The said metal layer and the said heat sink are joined by the manufacturing method of the copper / aluminum joined body of Claim 1, The manufacturing method of the insulated circuit board with a heat sink characterized by the above-mentioned. A heat sink comprising: an insulating layer; a circuit layer formed on one surface of the insulating layer; a metal layer formed on the other surface of the insulating layer; and a heat sink disposed on the metal layer side. A method of manufacturing an insulated circuit board with a cover, comprising:
Either one or both of the joining surface of the metal layer and the joining surface of the heat sink are made of aluminum or an aluminum alloy,
A bonding material made of copper or a copper alloy is disposed between the bonding surface of the metal layer and the bonding surface of the heat sink,
2. The copper / aluminum bonded body according to claim 1, wherein one or both of a bonding surface of the metal layer made of aluminum or an aluminum alloy and a bonding surface of the heat sink and the bonding material made of copper or a copper alloy are used. A method for manufacturing an insulated circuit board with a heat sink, characterized by joining by a manufacturing method. Insulation with heat sink, comprising: an insulating layer; a circuit layer formed on one surface of the insulating layer; a metal layer formed on the other surface of the insulating layer; and a heat sink bonded to the metal layer. A circuit board manufacturing method comprising:
Either one or both of the joining surface of the metal layer and the joining surface of the heat sink are made of copper or a copper alloy,
A bonding material made of aluminum or an aluminum alloy is disposed between the bonding surface of the metal layer and the bonding surface of the heat sink,
2. The copper / aluminum bonded body according to claim 1, wherein one or both of a bonding surface of the metal layer made of copper or a copper alloy and a bonding surface of the heat sink and the bonding material made of aluminum or an aluminum alloy are used. A method for manufacturing an insulated circuit board with a heat sink, characterized by joining by a manufacturing method.

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