JP2018121376A - Power conversion device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve reliability and heat radiation property of a power conversion device.SOLUTION: A power conversion device comprises: a power semiconductor module 300a; a flow passage forming body 200 for forming a flow passage which stores the power semiconductor module 300a and makes a cooling medium flow; a pressing member 500 which is brought into contact with the power semiconductor module 300a so that the power semiconductor module 300a is prevented from separating from the flow passage forming body 200; and an AC conductor 241 and a DC conductor 242, which are connected to a terminal of the power semiconductor module 300a. The pressing member 500 is thermally brought into contact with the AC conductor 241 and the DC conductor 242 via an insulating member 243.SELECTED DRAWING: Figure 6

Description

  The present invention relates to a power conversion device, and more particularly to a power conversion device that supplies power to a motor for driving a vehicle.

  A power semiconductor module including a power semiconductor element is used for a power conversion device that converts a direct current and an alternating current. There are various methods for cooling the power semiconductor module.

  For example, as disclosed in Patent Document 1, a circuit body containing a power semiconductor element is accommodated in a cylindrical case, a space between the side surface of the case and a cooling jacket is sealed, and a refrigerant is brought into contact with the outer surface of the case There is.

  In the case of such a cooling method, improvement in reliability is required for measures for preventing the power semiconductor module from being detached due to the pressure from the refrigerant. On the other hand, it is required to reduce the mounting space of the power converter, and a countermeasure against heat when the inside of the power converter is integrated is also required.

JP 2014-72939 A

  Therefore, the problem to be solved by the present invention is to improve the heat dissipation as well as the reliability of the power converter.

  The power conversion device according to the present invention includes a power semiconductor module, a flow path forming body that houses the power semiconductor module and forms a flow path for flowing a refrigerant, and the power semiconductor module is separated from the flow path forming body. A pressing member that contacts the power semiconductor module and a conductor connected to a terminal of the power semiconductor module are provided to prevent the pressing, and the pressing member is in thermal contact with the conductor via an insulating member.

  According to the present invention, it is possible to improve the heat dissipation as well as the reliability of the power conversion device.

1 is an external perspective view of a power conversion device 100. FIG. 1 is an exploded perspective view of a power conversion device 100. FIG. It is an external appearance perspective view of the pressing member 500 in this embodiment. It is an external appearance perspective view of the power semiconductor module 300a of this embodiment. FIG. 5 is a cross-sectional view of a cross section of the power semiconductor module 300a cut from the direction of arrow A shown in FIG. FIG. 5 is a cross-sectional view of a cross section in which the power semiconductor module 300a is assembled to the flow path forming body 200 and the flow path forming body 200 is cut from the direction of arrow B shown in FIG. It is a disassembled perspective view inside the circuit body 350 of the power semiconductor module 300a. It is an enlarged view of the protrusion part 304 vicinity of the module case 301 of the broken line C part of FIG. It is an enlarged view of the pressing member 500 vicinity of the broken line D part of FIG. It is an enlarged view of the pressing member 500 vicinity of the broken-line E part of FIG. 4 is a cross-sectional view of the power conversion device 100 after the power semiconductor modules 300a to 300c are assembled to the flow path forming body 200. FIG. FIG. 4 is a cross-sectional view of a state where the power semiconductor modules 300a to 300c and the capacitor 230 are assembled to the flow path forming body 200, the flow path forming body 200 is cut, and the power semiconductor modules 300a to 300c and the capacitor 230 are assembled.

  An embodiment according to the present invention will be described with reference to FIGS.

  FIG. 1 is an external perspective view of the power conversion apparatus 100. FIG. 2 is an exploded perspective view of the power conversion apparatus 100.

  The power semiconductor modules 300a to 300c function as an inverter circuit that converts a direct current and an alternating current. Capacitor 230 smoothes the direct current.

  The molded bus bar 240 electrically connects the power semiconductor modules 300a to 300c and the capacitor 230. The mold bus bar 240 includes a current sensor (not shown), an AC conductor 241 and a DC conductor 242 described later.

  The positive side DC input bus bar 250P and the negative side DC input bus bar 250N are connected to the DC conductor 242 of the molded bus bar 240 and transmit electric power from the battery.

  The control-driver circuit board 260 has a circuit for controlling and driving the power semiconductor modules 300a to 300c.

  The flow path forming body 200 is a box-shaped rectangular parallelepiped that forms a flow path 400 (described later) through which a coolant flows and has a pair of short side wall portions and long side wall portions.

  The flow path forming body 200 houses the capacitor 230, the power semiconductor modules 300a to 300c, the molded bus bar 240, the DC input bus bars 250P and 250N, the control-driver circuit board 260, and the like.

  The refrigerant inflow pipe 210IN and the refrigerant outflow pipe 210OUT are inserted into the refrigerant inflow port 211IN and the refrigerant outflow port 211OUT of the flow path forming body 200 to allow the refrigerant to flow in or out.

  The housing lower cover 220 is assembled so as to cover the flow path forming member lower surface 200a. As a result, the water-tightness of the refrigerant flowing in the flow path 400 inside the flow path forming body 200 is ensured.

  The pressing member 500 contacts the power semiconductor modules 300a to 300 so as to prevent the power semiconductor modules 300a to 300 from being separated from the flow path forming body 200.

  The housing upper cover 270 is assembled so as to cover the upper surface 200b of the flow path forming body after each component is stored in the flow path forming body 200.

  FIG. 3 is an external perspective view of the pressing member 500 in the present embodiment.

  In the present embodiment, the holding member 500 passes through the first through hole 501 for penetrating the terminal portion 310 (described later in FIG. 4) of the power semiconductor module 300a and the terminal portion 310 of the power semiconductor module 300b. The second through hole 502 and the third through hole 503 for penetrating the terminal portion 310 of the power semiconductor module 300c are formed.

  The pressing member 500 has a region 504 that functions as a wall for partitioning the first through hole 501 and the second through hole 502, and a region 505 that functions as a wall for partitioning the second through hole 502 and the third through hole 503. And having.

  FIG. 4 is an external perspective view of the power semiconductor module 300a of the present embodiment. FIG. 5 is a cross-sectional view of the cross section of the power semiconductor module 300a taken from the direction of arrow A shown in FIG.

  The circuit body 350 of the power semiconductor module 300a includes a power semiconductor element (IGBT, diode, etc.) constituting a series circuit, a conductor member 351 connected to the power semiconductor element via a solder material, a control terminal 300CO, and the power semiconductor module side. An AC terminal 300AC, a power semiconductor module side DC terminal 300DC, and a sealing portion 303 for sealing these components are provided.

  The circuit body 350 is inserted from the insertion opening 302 of the module case 301. The circuit body 350 is joined to the inner wall of the module case 301 via insulating paper or the like.

  Further, as shown in FIG. 4, the first heat radiating portion 305a and the second heat radiating portion 305b, which are a part of the outer surface of the module case 301 and have a surface wider than the other surfaces, are arranged facing each other. Each power semiconductor element (IGBT, diode, etc.) is arranged so as to face the surface.

  In the present embodiment, the heat radiation fins 305c are arranged on the first heat radiation part 305a and the second heat radiation part 305b, which are part of the outer surface of the module case 301. Further, the heat dissipating fins 305c do not need to have a cylindrical shape, and may have a different shape, or may have a shape without the heat dissipating fins 305c.

  In the present embodiment, a protruding portion 304 is formed separately from the first heat radiating portion 305a, the second heat radiating portion 305b, and the heat radiating fin 305c which are heat radiating surfaces of the power semiconductor module 300a. The protrusion 304 forms a groove 306 that houses the seal member 801 on the top surface.

  A combination of the control terminal 300CO, the power semiconductor module AC terminal 300AC, and the power semiconductor module DC terminal 300DC is referred to as a terminal portion 310.

  As shown in FIG. 5, the flow path forming body 200 forms a flow path 400 that houses the power semiconductor module 300 a and flows the refrigerant, and communicates from one surface of the flow path forming body 200 to the flow path 400. One opening 401 is formed.

  In the present embodiment, the heat radiating fins 305c are in contact with the refrigerant on the first heat radiating portion 305a and the second heat radiating portion 305b, which are part of the outer surface of the module case 301.

  In the power semiconductor module 300 a, a first seal surface 307 is formed in the groove portion 306 so as to be formed along the insertion direction from the first opening 401 of the flow path forming body 200 to the flow path 400.

  FIG. 6 is a cross-sectional view of a cross section in which the power semiconductor module 300a is assembled to the flow path forming body 200 and the flow path forming body 200 is cut from the direction of arrow B shown in FIG.

  The pressing member 500 contacts so as to prevent the power semiconductor module 300a from being separated from the flow path forming body 200.

  The pressing member 500 is supported by the flow path forming body 200 via a fastening screw 510.

  The power semiconductor module AC terminal 300AC shown in FIG. 4 is electrically connected to an AC conductor 241 included in the molded bus bar 240.

  The power semiconductor module DC terminal 300DC shown in FIG. 4 is electrically connected to a DC conductor 242 included in the molded bus bar 240.

  The pressing member 500 is in thermal contact with the AC conductor 241 and the DC conductor 242 through the insulating member 243.

The power semiconductor modules 300 a to 300 c move in a direction away from the flow path forming body 200 due to the pressure of the refrigerant in the flow path 400. The holding member 500 prevents the power semiconductor modules 300a to 300c from moving away from the flow path forming body 200 by the restoring force of the holding member 500. Power semiconductor module AC terminal 300AC, power semiconductor module DC terminal 300DC, AC The circuit body 350 including the conductor 241, the DC conductor 242, and the power semiconductor elements inside the power semiconductor modules 300 a to 300 c generates heat when a current flows.

  The circuit body 350 particularly generates heat and transfers heat to the power semiconductor module AC terminal 300AC and the power semiconductor module DC terminal 300DC. The heat transferred to the power semiconductor module AC terminal 300AC and the power semiconductor module DC terminal 300DC is transferred to the AC conductor 241 and the DC conductor 242. The heat transferred to the AC conductor 241 and the DC conductor 242 is transferred to the holding member 500 through the insulating member 243.

  FIG. 7 is an exploded perspective view of the inside of the circuit body 350 of the power semiconductor module 300a.

  The power semiconductor module 300a has a circuit portion 311 having a power semiconductor element.

  FIG. 8 is an enlarged view of the vicinity of the protruding portion 304 of the module case 301 at the broken line C portion in FIG. 6. FIG. 9 is an enlarged view of the vicinity of the pressing member 500 at a portion indicated by a broken line D in FIG.

  The pressing member 500 is in thermal contact with a part of the protrusion 304 that is an outer surface different from a part of the outer surface that contacts the refrigerant of the module case 301 via the insulating member 243.

  The power semiconductor module AC terminal 300AC, the power semiconductor module DC terminal 300DC, the AC conductor 241, the DC conductor 242, and the circuit body 311 including the power semiconductor elements inside the power semiconductor modules 300a to 300c generate heat when current flows.

  The circuit unit 311 particularly generates heat and transfers heat to the power semiconductor module AC terminal 300AC and the power semiconductor module DC terminal 300DC.

  The heat transferred to the power semiconductor module AC terminal 300AC and the power semiconductor module DC terminal 300DC is transferred to the AC conductor 241 and the DC conductor 242.

  The heat transferred to the AC conductor 241 and the DC conductor 242 is transferred to the holding member 500 through the insulating member 243.

  The heat transferred to the pressing member 500 is transferred to a part of the protruding portion 304 that is an outer surface different from a part of the outer surface that contacts the refrigerant of the module case 301 via the heat radiating member.

  The heat transferred to a part of the protrusion 304 is transferred to the outer surface of the module case 301 that contacts the refrigerant. The heat transferred to the outer surface of the module case 301 that contacts the refrigerant is transferred to the refrigerant in the flow path 400.

  Through the above process, heat in the power semiconductor modules 300a to 300c is radiated to protect the power semiconductor modules 300a to 300c from heat.

  FIG. 10 is an enlarged view of the vicinity of the pressing member 500 at the broken line E portion in FIG. 6.

  The holding member 500 is in thermal contact with the DC conductor 242 through the insulating member 243. The heat generated in the circuit unit 311 is transferred to the power semiconductor module DC terminal 300DC. The heat transferred to the power semiconductor module DC terminal 300DC is transferred to the DC conductor 242.

  The heat transferred to the DC conductor 242 is transferred to the pressing member 500 through the insulating member 243. The heat transferred to the holding member 500 is transferred to the flow path forming body 200. The heat transferred to the flow path forming body 200 is transferred to the refrigerant in the flow path 400.

  Further, the heat transferred to the holding member 500 is transferred to a part of the protruding portion 304 that is an outer surface different from a part of the outer surface that contacts the refrigerant of the module case 301 via the heat radiating member. The heat transferred to a part of the protrusion 304 is transferred to the outer surface of the module case 301 that contacts the refrigerant. The heat transferred to the outer surface of the module case 301 that contacts the refrigerant is transferred to the refrigerant in the flow path 400.

  Through the above process, heat in the power semiconductor modules 300a to 300c is radiated to protect the power semiconductor modules 300a to 300c from heat.

  FIG. 11 is a cross-sectional view of the power conversion device 100 after the power semiconductor modules 300 a to 300 c are assembled to the flow path forming body 200. In FIG. 11, for the purpose of explanation, the AC conductor 241 included in the molded bus bar 240 is shown exposed.

  The holding member 500 forms a first through hole 501, a second through hole 502, and a first through hole 503 for allowing the terminal portions 310a to 310c of the power semiconductor modules 300a to 300c to pass therethrough.

  A region 504 is formed between the first through hole 501 and the second through hole 502, and the AC conductor 241a and the DC conductor 242a are in thermal contact with the region 504 through an insulating member. Instead of the conductor 241a and the DC conductor 242a, the AC conductor 241b and the DC conductor 242b may be in a shape of being in thermal contact with the region 504.

  A region 505 is formed between the second through hole 502 and the third through hole 503, and the AC conductor 241b and the DC conductor 242b are in thermal contact with the region 505 through an insulating member. Instead of the conductor 241b and the DC conductor 242b, a shape in which the AC conductor 241c and the DC conductor 242c are in thermal contact with the region 505 may be used.

  The heat generated in the circuit unit 311 of the power semiconductor modules 300a to 300c is transferred to the power semiconductor module AC terminals 300ACa to 300ACc and the power semiconductor module DC terminals 300DCa to 300DCc.

  The heat transferred to the power semiconductor module AC terminals 300ACa to 300ACc and the power semiconductor module DC terminals 300DCa to 300DCc is transferred to the AC conductors 241a to 241c and the DC conductors 242a to 242c.

  The heat transferred to the AC conductors 241a to 241c and the DC conductors 242a to 242c is transferred to the holding member 500 and the regions 504 to 505 through the insulating members 243a to 243c.

  The heat transferred to the holding member 500 and the regions 504 to 505 is transferred to the flow path forming body 200. The heat transferred to the flow path forming body 200 is transferred to the refrigerant in the flow path 400.

  Further, the heat transferred to the holding member 500 and the regions 504 to 505 is one of the protrusions 304a to 304c that becomes an outer surface different from a part of the outer surface that contacts the refrigerant of the module cases 301a to 301c via the heat dissipation member. Heat is transferred to the part.

  The heat transferred to a part of the protrusions 304a to 304c is transferred to the outer surface of the module cases 301a to 301c that contacts the refrigerant. The heat transferred to the outer surface in contact with the refrigerant in the module cases 301 a to 301 c is transferred to the refrigerant in the flow path 400.

  Through the above process, heat in the power semiconductor modules 300a to 300c is radiated to protect the power semiconductor modules 300a to 300c from heat.

  FIG. 12 is a cross-sectional view of the state where the power semiconductor modules 300a to 300c and the capacitor 230 are assembled to the flow path forming body 200, the flow path forming body 200 is cut, and the power semiconductor modules 300a to 300c and the capacitor 230 are assembled. It is. In FIG. 12, for the purpose of explanation, the AC conductor 241 and the current conductor 242 included in the molded bus bar 240 are shown in a bare manner.

  In the flow path forming body 200, the wall 201 is disposed between the power semiconductor modules 300a to 300c and the capacitor 230.

  The wall 201 forms a stepped portion 202 where the pressing member 500 is disposed. At this time, the stepped portion 202 is formed so that one surface of the pressing member 500 is substantially flush with a part of the wall 201.

  The AC conductor 241 and the DC conductor 242 are in thermal contact with the stepped portion 202 formed so that one surface of the pressing member 500 is substantially flush with a part of the wall 201 via the heat radiating member 506.

  The wall 201 and the stepped portion 202 are arranged between the power semiconductor modules 300a to 300c and the capacitor 230, but the wall 201 and the stepped portion are disposed between the power semiconductor modules 300a to 300c and the tip 244 of the AC conductor 241. The part 202 may be disposed and may be in thermal contact with a stepped part formed so as to be substantially flush with a part of the surface of the AC conductor 241 via a heat dissipation member.

  The power semiconductor module AC terminal 300AC, the power semiconductor module DC terminal 300DC, the AC conductor 241, the DC conductor 242, and the circuit unit 311 including the power semiconductor elements inside the power semiconductor modules 300a to 300c generate heat when current flows.

  The heat generated by the DC conductor 242 connected to the power semiconductor module DC terminal 300DC and the capacitor 230 is transferred to the step portion 202 via the heat dissipation member 506.

  The heat transferred to the stepped portion 202 is transferred to the wall 201 in the flow path forming body 200. The heat transferred to the wall 201 is transferred to the refrigerant in the flow path 400.

  Through the above process, the power semiconductor modules 300a to 300c are protected from heat.

  The heat generated in the circuit body 311 of the power semiconductor module 300a is transferred to the power semiconductor module DC terminal 300DC. The heat transferred to the power semiconductor module DC terminal 300DC is transferred to the DC conductor 242a. The heat transferred to the DC conductor 242 is transferred to the step portion 202 via the heat radiating member 506.

  The heat transferred to the stepped portion 202 is transferred to the wall 201 in the flow path forming body 200. The heat transferred to the wall 201 is transferred to the refrigerant in the flow path 400.

  Through the above process, heat in the power semiconductor modules 300a to 300c is radiated to protect the power semiconductor modules 300a to 300c from heat.

DESCRIPTION OF SYMBOLS 100 ... Power converter device 200 ... Flow path formation body, 200a ... Flow path formation body lower surface, 200b ... Flow path formation body upper surface, 201 ... Wall, 202 ... Step part, 210IN ... Refrigerant inflow pipe, 210OUT ... Refrigerant outflow Pipe, 211IN: Refrigerant inlet, 211OUT ... Refrigerant outlet, 220 ... Housing lower cover, 230 ... Capacitor, 240 ... Mold bus bar, 241 ... AC conductor, 242 ... DC conductor, 243 ... Insulating member, 250N ... Negative electrode DC Input bus bar, 250P ... Positive side DC input bus bar, 260 ... Control-driver circuit board, 270 ... Upper housing cover, 300a ... Power semiconductor module, 300b ... Power semiconductor module, 300c ... Power semiconductor module, 300AC ... Power semiconductor module side AC terminal, 300CO ... control terminal, 300DC ... -Semiconductor module side DC terminal, 301 ... module case, 302 ... insertion port, 303 ... sealing part, 304 ... projection, 305a ... first heat radiating part, 305b ... second heat radiating part, 305c ... heat radiating fin, 306 ... Groove portion, 307 ... first seal surface, 310 ... terminal portion, 310a ... terminal portion 310a, 310b ... terminal portion 310b, 310c ... terminal portion 310c, 311 ... circuit portion, 350 ... circuit body, 351 ... conductor member, 400 ... flow Road 401, first opening 500, pressing member 501 ... first through hole 502 ... second through hole 503 ... third through hole 504 ... region, 505 ... region, 506 ... heat dissipation member, 510 ... fastening Screw, 801 ... seal member

Claims (7)

A power semiconductor module;
A flow path forming body that houses the power semiconductor module and forms a flow path for flowing a refrigerant;
A pressing member that contacts the power semiconductor module so as to prevent the power semiconductor module from separating from the flow path forming body;
A conductor connected to a terminal of the power semiconductor module,
The said pressing member is a power converter device which contacts the said conductor thermally through an insulating member. The power conversion device according to claim 1,
The power semiconductor module includes a circuit body having a power semiconductor element, and a module case for storing the circuit body,
The module case has a part of the outer surface in contact with the refrigerant,
The power conversion device, wherein the pressing member is in thermal contact with an outer surface different from the part of the outer surface of the module case via a heat radiating member. The power conversion device according to claim 1,
The conductor is an AC conductor that transmits an AC current;
The said pressing member is a power converter device which contacts the said AC conductor thermally through an insulating member. The power conversion device according to any one of claims 1 to 3,
The conductor is a DC conductor that transmits a DC current;
The said pressing member is a power converter device which contacts the said DC conductor thermally through an insulating member. The power conversion device according to any one of claims 1 to 4,
The said pressing member is a power converter device supported by the said flow-path formation body. The power conversion device according to any one of claims 1 to 5,
A plurality of the power semiconductor modules are provided,
The pressing member has a first through hole for penetrating the first terminal of one of the plurality of power semiconductor modules, and a second through hole for penetrating the second terminal of the other of the plurality of power semiconductor modules. With holes,
The conductor is connected to the first terminal or / and the second terminal, and is thermally connected to a region formed between the first through hole and the second through hole in the pressing member via an insulating member. Power converter that touches. The power conversion device according to any one of claims 1 to 5,
A capacitor for smoothing the direct current supplied to the power semiconductor module;
A wall disposed between the capacitor and the power semiconductor module,
The wall forms a step portion for arranging the pressing member,
The pressing member is formed such that one surface of the pressing member is substantially flush with a part of the wall,
The said conductor is a power converter device which contacts the one surface of the said pressing member which forms the said substantially identical surface, and the one part surface of the said wall via a heat radiating member.

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