JP2018113369A - Semiconductor device, display device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of increasing design flexibility; and provide a display device and an electronic apparatus which use the semiconductor device.SOLUTION: A semiconductor device comprises: a transistor having a gate electrode and a channel region in an oxide semiconductor film opposite to the gate electrode; first wiring which is provided in the same layer with the oxide semiconductor film and includes the same constituent material with the oxide semiconductor film; second wiring provided in the same layer with the gate electrode; and a lamination part which includes an oxygen permeation prevention film opposite to the second wiring across the first wiring and a first insulation film between the oxygen permeation prevention film and the first wiring.SELECTED DRAWING: Figure 1

Description

  The present technology relates to a semiconductor device having a transistor, a display device using the semiconductor device, and an electronic apparatus.

  2. Description of the Related Art In recent years, thin film transistors (TFTs) using an oxide semiconductor film as a channel have been actively developed along with the increase in screen size and drive speed of active matrix drive systems (for example, patent documents). 1). In a semiconductor device including an oxide semiconductor film, a plurality of wirings, a storage capacitor element, and the like are provided along with a thin film transistor.

JP 2011-228622 A

  In such a semiconductor device, it is desired to increase the degree of freedom in designing electronic elements and wirings.

  It is desirable to provide a semiconductor device capable of increasing the degree of freedom in design, a display device using the semiconductor device, and an electronic apparatus.

  A semiconductor device according to an embodiment of the present technology is provided in the same layer as a transistor having a gate electrode and a channel region of an oxide semiconductor film facing the gate electrode, and is the same as the oxide semiconductor film A first wiring containing the constituent material, a second wiring provided in the same layer as the gate electrode, an oxygen permeation preventive film, an oxygen permeation preventive film and the first wiring facing the second wiring with the first wiring in between And a laminated portion including a first insulating film between the two.

  A display device according to an embodiment of the present technology includes a display element and a semiconductor device that drives the display element. The semiconductor device includes a gate electrode and a transistor having a channel region of an oxide semiconductor film facing the gate electrode; The first wiring provided in the same layer as the oxide semiconductor film and including the same constituent material as the oxide semiconductor film, the second wiring provided in the same layer as the gate electrode, and the second wiring interposed between the first wiring and the second wiring. An oxygen permeation preventive film facing the wiring, and a stacked portion including a first insulating film between the oxygen permeation preventive film and the first wiring are included.

  An electronic apparatus according to an embodiment of the present technology includes the display device of the present technology.

  In the semiconductor device, the display device, and the electronic device according to the embodiment of the present technology, supply of oxygen to the first wiring is suppressed by the oxygen permeation prevention film provided in the stacked portion.

  According to the semiconductor device, the display device, and the electronic device according to the embodiment of the present technology, since the oxygen permeation prevention film is provided in the stacked portion, the first wiring and the second wiring overlap each other. The conductivity of the wiring can be stably maintained. Therefore, it is possible to increase the degree of design freedom. Note that the effects described here are not necessarily limited, and may be any effects described in the present disclosure.

It is a cross-sectional schematic diagram showing the schematic structure of the semiconductor device which concerns on one embodiment of this technique. FIG. 2 is a schematic plan view illustrating a schematic configuration of the semiconductor device illustrated in FIG. 1. It is a cross-sectional schematic diagram showing schematic structure of the semiconductor device which concerns on a comparative example. It is a cross-sectional schematic diagram for demonstrating the effect | action of the semiconductor device shown in FIG. FIG. 7A is a schematic plan view illustrating a schematic configuration of a semiconductor device according to Modification 1, and FIG. 10 is a schematic cross-sectional view illustrating a schematic configuration of a main part of a semiconductor device according to Modification 2. FIG. FIG. 2 is a block diagram illustrating a functional configuration of a display device to which the semiconductor device illustrated in FIG. 1 and the like is applied. It is a block diagram showing the structure of the imaging device to which the semiconductor device shown in FIG. 1 etc. is applied. It is a block diagram showing the structure of an electronic device. FIG. 6 is a schematic plan view illustrating another example of the semiconductor device illustrated in FIG. 2.

Hereinafter, embodiments of the present technology will be described in detail with reference to the drawings. The description will be given in the following order.
1. Embodiment (Example of a semiconductor device having an oxygen permeation preventive film in a laminated portion)
2. Modification 1 (example in which part of the oxygen permeation prevention film constitutes the lower electrode of the storage capacitor element)
3. Modification 2 (example having a bottom gate type transistor)
4). Application example 1 (example of display device and imaging device)
5). Application Example 2 (Example of electronic equipment)

<Embodiment>
[Constitution]
FIG. 1 schematically illustrates a cross-sectional configuration of a semiconductor device (semiconductor device 1) according to an embodiment of the present technology, and FIG. 2 illustrates a partial planar configuration of the semiconductor device 1. . A cross-sectional configuration along the line II ′ of FIG. 2 is shown in FIG. The semiconductor device 1 has a top-gate thin film transistor (transistor 10T), and is used for a drive circuit such as a display device and an imaging device (a display device 2A in FIG. 7 and an imaging device 2B in FIG. 8 described later). . The semiconductor device 1 includes an insulating film 12 (second insulating film), an oxygen permeation preventive film 13, an insulating interlayer film 14 (first insulating film), an oxide semiconductor film 15, a gate insulating film 16, and a gate electrode on a substrate 11. 17 in this order.

  In the oxide semiconductor film 15, the region facing the gate electrode 17 is the channel region 15T of the transistor 10T, and the region other than the channel region 15T is the first wiring region 15W with reduced resistance. A second wiring 18 is provided in the same layer as the gate electrode 17 so as to be separated from the gate electrode 17. The second wiring 18 and the oxide semiconductor film 15 extend in a direction crossing each other (FIG. 2), and the semiconductor device 1 includes a portion where the second wiring 18 and the oxide semiconductor film 15 overlap (stacked portion). 10L).

  The substrate 11 is made of, for example, glass, quartz, silicon, or the like. Or the board | substrate 11 may be comprised from resin materials, such as PET (polyethylene terephthalate), PI (polyimide), PC (polycarbonate), or PEN (polyethylene naphthalate), for example. In addition to this, a substrate 11 made of a metal plate such as stainless steel (SUS) with an insulating material can be used.

  The insulating film 12 is for preventing diffusion of impurities from the substrate 11, and is provided over the entire surface of the substrate 11. The insulating film 12 also plays a role of controlling the carrier density of the oxide semiconductor film 15. The insulating film 12 is composed of an inorganic insulating film such as a silicon oxide film (SiOx), a silicon nitride film (SiNx), a silicon oxynitride (SiON), and an aluminum oxide film (AlOx). The insulating film 12 may be configured by laminating an organic insulating film such as acrylic resin, polyimide, and novolac resin, and an inorganic insulating film. The thickness of the insulating film 12 is, for example, 10 nm to 1000 nm.

  The oxygen permeation preventive film 13 is for blocking the movement of oxygen from the substrate 11 and the insulating film 12 to the oxide semiconductor film 15. In the present embodiment, the oxygen permeation preventive film 13 is provided in the stacked portion 10L, and the oxygen permeation preventive film 13 faces the second wiring 18 with the first wiring region 15W interposed therebetween. Although details will be described later, this prevents the supply of oxygen from the lower layer (the substrate 11 and the insulating film 12) to the oxide semiconductor film 15, so that the conductivity of the first wiring region 15W can be stably maintained. It becomes possible.

  The oxygen permeation preventive film 13 is provided in a selective region (laminated portion 10L) on the insulating film 12. For example, the width (the length in the Y direction) of the oxygen permeation prevention film 13 is smaller than the width of the oxide semiconductor film 15, and the length of the oxygen permeation prevention film 13 (the length in the X direction) is the second wiring 18. It is larger than the width of (Fig. 2).

  The oxygen permeation prevention film 13 contains, for example, a metal. The oxygen permeation preventive film 13 is made of, for example, titanium (Ti), tungsten (W), tantalum (Ta), aluminum (Al), molybdenum (Mo), silver (Ag), neodymium (Nd), and copper (Cu). It is composed of a simple substance including one kind and an alloy. The oxygen permeation preventive film 13 may be made of a metal oxide. For example, indium (In), gallium (Ga), zinc (Zn), tin (Sn), titanium (Ti), and niobium (Nb). You may make it comprise with the oxide containing at least 1 sort (s) of these elements. Specifically, indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO: InGaZnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium tin oxide (ITO), The oxygen permeation preventive film 13 may be made of tin oxide (SnO), indium oxide (InO), or the like. It is also possible to use titanium oxide (TiO) and aluminum oxide (AlO) for the oxygen permeation preventive film 13. The thickness (length in the Z direction) of the oxygen permeation prevention film 13 is, for example, 10 nm to 500 nm.

  An insulating interlayer film 14 is provided between the oxygen permeation preventive film 13 and the oxide semiconductor film 15. The insulating interlayer film 14 is for preventing contact between the oxygen permeation preventive film 13 and the oxide semiconductor film 15. The insulating interlayer film 14 covers the oxygen permeation preventive film 13 and is provided, for example, over the entire surface of the substrate 11. The insulating interlayer film 14 is made of an inorganic insulating film such as a silicon oxide film (SiOx), a silicon nitride film (SiNx), a silicon oxynitride (SiON), and an aluminum oxide film (AlOx). For the insulating interlayer film 14, an organic insulating film such as polyimide, acrylic resin, or silicon resin may be used. The thickness of the insulating interlayer film 14 is, for example, 10 nm to 1000 nm.

  The top-gate transistor 10T has a gate electrode 17 on the oxide semiconductor film 15 (channel region 15T) with a gate insulating film 16 therebetween. Source / drain electrodes (not shown) are electrically connected to the first wiring region 15 </ b> W of the oxide semiconductor film 15.

  The oxide semiconductor film 15 is provided in a selective region on the insulating interlayer film 14. The oxide semiconductor film 15 extends, for example, along the X direction (FIG. 2), and includes the channel region 15T and the first wiring region 15W as described above. The channel region 15T overlaps (opposes) the gate electrode 17 in plan view. The first wiring region 15W is a region having a lower electrical resistance than the channel region 15T. For example, a metal element diffused as a dopant (for example, aluminum (Al), indium (In), titanium (Ti), tin (Sn), etc.) ) Is included. In the first wiring region 15W, the resistance of the oxide semiconductor film 15 may be reduced by desorption of oxygen. The first wiring region 15W functions as a conductor. A second wiring 18 is provided crossing the first wiring region 15W. That is, in the stacked portion 10L, the first wiring region 15W of the oxide semiconductor film 15 and the second wiring 18 overlap with the gate insulating film 16 therebetween. Here, the oxide semiconductor film 15 in the first wiring region 15W is a specific example of the “first wiring” in the present technology. That is, here, the “first wiring” is made of the same constituent material as the oxide semiconductor film 15 having the channel region 15T and has the same thickness.

  The oxide semiconductor film 15 is made of, for example, an oxide of at least one element selected from indium (In), gallium (Ga), zinc (Zn), tin (Sn), titanium (Ti), and niobium (Nb). An oxide semiconductor is included as a main component. Specifically, indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO: InGaZnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), oxide are formed on the oxide semiconductor film 15. Indium tin (ITO), indium oxide (InO), or the like can be used. The thickness of the oxide semiconductor film 15 is, for example, 10 nm to 200 nm.

The gate insulating film 16 is provided over the entire surface of the substrate 11, for example, covers the oxide semiconductor film 15 and is provided on the insulating interlayer film 14. In the transistor 10T, the gate insulating film 16 (third insulating film) is disposed between the channel region 15T and the gate electrode 17, and in the stacked portion 10L, between the first wiring region 15W and the second wiring 18. Yes. The gate insulating film 16 is, for example, a single layer film made of one of a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), a silicon nitride oxide film (SiON), and an aluminum oxide film (AlO _x ), or It is comprised by the laminated film which consists of 2 or more types of them. The thickness of the gate insulating film 16 is, for example, 50 nm or more and 300 nm or less in the case of a single layer film of a silicon oxide film.

  The gate electrode 17 functions as a wiring for supplying a potential as well as controlling the carrier density in the channel region 15T by the applied gate voltage (Vg). The constituent material of the gate electrode 17 is, for example, titanium (Ti), tungsten (W), tantalum (Ta), aluminum (Al), molybdenum (Mo), silver (Ag), neodymium (Nd), and copper (Cu). The simple substance and alloy containing 1 type of these are mentioned. Alternatively, it may be a compound film containing at least one of them and a laminated film containing two or more kinds. For example, a transparent conductive film such as ITO may be used. The gate electrode 17 is provided in a selective region on the gate insulating film 16 so as to face the channel region 15T.

  The source / drain electrodes (not shown) function as the source or drain of the transistor 10T, and include, for example, the same metal or transparent conductive film as listed as the constituent material of the gate electrode 17. ing. As the source / drain electrodes, it is desirable to select a material having good electrical conductivity.

  The second wiring 18 is provided in the same layer as the gate electrode 17, that is, on the gate insulating film 16, and extends, for example, along the Y direction. The second wiring 18 is for controlling the voltage of, for example, a data line or a gate line, and is connected to, for example, a gate electrode or a source / drain electrode of each pixel transistor. The second wiring 18 is formed in the same process as the gate electrode 17, is made of the same constituent material as the gate electrode 17, and has the same thickness as the gate electrode 17.

[Production method]
The semiconductor device 1 as described above can be manufactured, for example, as follows.

  First, the insulating film 12 is formed on the entire surface of the substrate 11. Next, after forming a metal film on the insulating film 12 by using, for example, a sputtering method, the oxygen permeation preventing film 13 is formed by patterning into a predetermined shape by, for example, photolithography and etching. Subsequently, an insulating interlayer film 14 is formed on the oxygen permeation preventive film 13 and the insulating film 12.

  Next, after an oxide semiconductor material is formed on the insulating interlayer film 14 by, for example, a sputtering method or the like, the oxide semiconductor film 15 is formed by patterning into a predetermined shape by, for example, photolithography and etching. Thereafter, a metal element is diffused as a dopant in the first wiring region 15W of the oxide semiconductor film 15 to reduce the resistance of the first wiring region 15W. Alternatively, the resistance of the first wiring region 15W may be reduced by a method such as extracting oxygen from the oxide semiconductor film 15. Subsequently, after forming the gate insulating film 16 by using, for example, a CVD method or the like, the gate electrode 17 and the second wiring 18 are formed on the gate insulating film 16. Finally, the semiconductor device 1 shown in FIG. 1 is completed by forming source / drain electrodes made of the above-described metal material.

[Action, effect]
In the semiconductor device 1 of the present embodiment, the channel region 15T of the oxide semiconductor film 15 is activated when an on voltage higher than the threshold voltage is applied to the gate electrode 17. Thereby, a current flows between the pair of source / drain electrodes through the first wiring region 15W.

  In the semiconductor device 1 of the present embodiment, the oxygen permeation preventive film 13 is provided between the insulating film 12 of the stacked portion 10L and the first wiring region 15W. Thereby, the supply of oxygen from the substrate 11 and the insulating film 12 to the oxide semiconductor film 15 is suppressed, so that the conductivity of the first wiring region 15W can be stably maintained. This will be described below using a comparative example.

  FIG. 3 illustrates a schematic cross-sectional configuration of a semiconductor device (semiconductor device 100) according to a comparative example. The semiconductor device 100 is not provided with an oxygen permeation preventive film and an insulating interlayer film (the oxygen permeation preventive film 13 and the insulating interlayer film 14 in FIG. 1). The semiconductor device 100 has a metal oxide film 130 on the oxide semiconductor film 15, and the metal oxide film 130 is in contact with the oxide semiconductor film 15 other than the channel region 15T and the stacked portion 100L. Similar to the semiconductor device 1, the gate insulating film 16 and the gate electrode 17 are provided on the oxide semiconductor film 15 in the channel region 15T, and the gate insulating film 16 and the gate electrode 17 are provided on the oxide semiconductor film 15 in the stacked unit 100L. A second wiring 18 is provided.

  The metal oxide film 130 is made of, for example, aluminum oxide, and sucks up oxygen O from lower layers (the insulating film 12 and the oxide semiconductor film 15). For this reason, the portion of the first wiring region 15W in contact with the metal oxide film 130 can stably maintain conductivity. In addition, the metal oxide film 130 also plays a role of protecting the oxide semiconductor film 15.

  However, as described above, in the stacked unit 100L, the insulating film 16B and the second wiring 18 are provided on the first wiring region 15W, and thus the metal oxide film 130 cannot be brought into contact with the first wiring region 15W. . For this reason, oxygen is supplied from the lower layer to the first wiring region 15W of the stacked unit 100L, and there is a possibility of exhibiting a semiconductor behavior similar to that of the channel region 15T. That is, in the stacked portion 100L having a structure similar to that of a transistor, the conductivity of the first wiring region 15W cannot be stably maintained. Therefore, in the semiconductor device 100, it is difficult to overlap the oxide semiconductor film 15 and the second wiring 180, and the layout is limited to a layout without the stacked portion 100L.

  On the other hand, since the oxygen permeation preventive film 13 is provided in the stacked portion 10L in the semiconductor device 1, the movement of oxygen O from the substrate 11 and the insulating film 12 to the oxide semiconductor film 15 is performed as shown in FIG. Is blocked by the oxygen permeation preventive film 13. Therefore, also in the stacked portion 10L, the conductivity of the first wiring region 15W is stably maintained, and the oxide semiconductor film 15 and the second wiring 18 can be laid out more freely.

  As described above, in this embodiment, since the oxygen permeation preventive film 13 is provided between the insulating film 12 and the oxide semiconductor film 15 of the stacked portion 10L, the conductivity of the first wiring region 15W is stabilized. Can be maintained. Therefore, it is possible to increase the degree of design freedom.

  Hereinafter, modifications of the present embodiment will be described. In the following description, the same components as those of the above-described embodiment will be denoted by the same reference numerals, and description thereof will be omitted as appropriate.

<Modification 1>
5A is a schematic plan configuration of the main part of the semiconductor device (semiconductor device 1A) according to Modification 1 of the above embodiment, and FIG. 5B is a schematic plan of the main part of the semiconductor device 1A. A cross-sectional configuration is shown. In this semiconductor device 1A, part of the oxygen permeation preventive film (oxygen permeation preventive film 13A) functions as a component of the electronic element, and the oxygen permeation preventive film 13A and the oxide semiconductor film 15 are the second wiring 18. It is electrically connected via. Except for this point, the semiconductor device 1A has the same configuration as that of the semiconductor device 1 of the above-described embodiment, and the operation and effect thereof are also the same.

  The semiconductor device 1A includes, for example, a storage capacitor element (not shown) together with a thin film transistor (for example, the transistor 10T in FIG. 1). The oxygen permeation preventive film 13A is made of a conductive film, and a part (not shown) of the oxygen permeation preventive film 13A functions as one electrode (for example, a lower electrode) of the storage capacitor element, for example.

  In the stacked portion 10L, the substrate 11, the oxygen permeation preventive film 13A, the insulating interlayer film 14, the first wiring region 15W, the insulating film 16B, and the second wiring 18 are stacked in this order. That is, since the oxygen permeation preventive film 13A is provided between the substrate 11 and the oxide semiconductor film 15, supply of oxygen from the substrate 11 to the oxide semiconductor film 15 is suppressed, and the conductivity of the first wiring region 15W is reduced. Sex can be maintained stably.

  The semiconductor device 1A includes a first contact portion C1 where the oxide semiconductor film 15 and the second wiring 18 are in contact, and a second contact portion C2 where the oxygen permeation prevention film 13A and the second wiring 18 are in contact. The oxygen permeation preventive film 13A and the oxide semiconductor film 15 are electrically connected through the second wiring 18 by the first contact portion C1 and the second contact portion C2. In the first contact portion C1, the substrate 11, the oxygen permeation preventive film 13A, the insulating interlayer film 14, the oxide semiconductor film 15, and the second wiring 18 are provided in this order. In the second contact portion C2, the substrate 11, the oxygen permeation preventive film 13A, and the second wiring 18 are provided in this order. In the semiconductor device 1A, the stacked portion 10L, the first contact portion C1, and the second contact portion C2 are arranged adjacently in this order.

  In the semiconductor device 1A, since the oxygen permeation preventive film 13A in which the lower electrode of the storage capacitor element is extended is provided in the stacked portion 10L, the lower electrode of the stable storage capacitor element and the oxide semiconductor can be formed in a simpler manner. A contact structure with the film 15 (first wiring region 15W) can be formed.

  For example, when the oxygen permeation preventive film 13A is not provided in the stacked portion 10L, the conductivity of the first wiring region 15W cannot be stably maintained, so that the second wiring 18 is connected to the oxide semiconductor film 15. It cannot be placed one on top of the other. For this reason, in order to connect the lower electrode of the storage capacitor element and the oxide semiconductor film 15, a plurality of photolithography processes are required, and the manufacturing process becomes complicated.

  In contrast, in the semiconductor device 1A, since the oxygen permeation preventive film 13A in which the lower electrode of the storage capacitor element is extended is provided in the stacked portion 10L, the conductivity of the first wiring region 15W in the stacked portion 10L is increased. Maintained stably. Therefore, the lower electrode of the storage capacitor element and the oxide semiconductor film 15 (first wiring region 15W) can be electrically connected without increasing the number of photolithography steps. Therefore, it is possible to form a stable contact structure between the lower electrode of the storage capacitor element and the first wiring region 15W by a simpler method.

  Further, by arranging the stacked portion 10L, the first contact portion C1, and the second contact portion C2 adjacent to each other, an increase in contact area can be suppressed.

  Also in the semiconductor device 1A, since the oxygen permeation preventive film 13A is provided in the stacked portion 10L, similarly to the semiconductor device 1, the oxide semiconductor film 15 and the second wiring 18 are arranged more freely. It becomes possible to increase the degree of freedom. A part of the oxygen permeation preventive film 13A functions as a component of the electronic element, and forms a contact structure between the oxygen permeation preventive film 13A and the oxide semiconductor film 15 (first wiring region 15W) by a simpler method. can do.

<Modification 2>
FIG. 6 schematically illustrates a cross-sectional configuration of a semiconductor device (semiconductor device 1B) according to Modification 2 of the above embodiment. This semiconductor device 1B has a bottom-gate transistor (transistor 10TB). Except for this point, the semiconductor device 1B has the same configuration as the semiconductor device 1 of the above-described embodiment, and the operation and effect thereof are also the same.

  The semiconductor device 1B includes a substrate 11, a gate electrode 17, a gate insulating film 16, an oxide semiconductor film 15, an insulating interlayer film 14, an oxygen permeation preventive film 13, and an insulating film 12 in this order. In the stacked portion 10 </ b> L, the second wiring 18 is provided in the same layer as the gate electrode 17, and the oxygen permeation preventive film 13 is disposed between the insulating interlayer film 14 and the insulating film 12.

  Similarly to the semiconductor device 1, the semiconductor device 1B is provided with the oxygen permeation preventive film 13 in the stacked portion 10L, so that oxygen can be supplied from the upper layer (insulating film 12) to the first wiring region 15W. It can be suppressed. Therefore, the conductivity of the first wiring region 15W in the stacked portion 10L is stably maintained, and the degree of freedom in design can be increased.

<Application example 1>
The semiconductor devices (semiconductor devices 1, 1 </ b> A, 1 </ b> B) described in the above embodiments and modifications are, for example, a display device (a display device 2 </ b> A in FIG. 7 described later), an imaging device (an imaging device 2 </ b> B in FIG. 8 described later), and the like. It can be used for the driving circuit.

  FIG. 7 shows a functional block configuration of the display device 2A. The display device 2A displays a video signal input from the outside or a video signal generated inside as a video, and is applied to, for example, a liquid crystal display in addition to the organic EL display described above. The display device 2A includes, for example, a timing control unit 21, a signal processing unit 22, a drive unit 23, and a display pixel unit 24.

  The timing control unit 21 includes a timing generator that generates various timing signals (control signals), and performs drive control of the signal processing unit 22 and the like based on these various timing signals. For example, the signal processing unit 22 performs predetermined correction on a digital video signal input from the outside, and outputs the video signal obtained thereby to the driving unit 23. The drive unit 23 includes, for example, a scanning line drive circuit and a signal line drive circuit, and drives each pixel of the display pixel unit 24 via various control lines. The display pixel unit 24 includes a display element such as an organic EL element or a liquid crystal display element, and a pixel circuit for driving the display element for each pixel. Among these, for example, the above-described semiconductor device is used for various circuits constituting part of the drive unit 23 or the display pixel unit 24.

  FIG. 8 shows a functional block configuration of the imaging apparatus 2B. The imaging device 2B is, for example, a solid-state imaging device that acquires an image as an electrical signal, and includes, for example, a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor) image sensor. The imaging device 2B includes, for example, a timing control unit 25, a drive unit 26, an imaging pixel unit 27, and a signal processing unit 28.

  The timing control unit 25 includes a timing generator that generates various timing signals (control signals), and performs drive control of the driving unit 26 based on these various timing signals. The driving unit 26 includes, for example, a row selection circuit, an AD conversion circuit, a horizontal transfer scanning circuit, and the like, and performs driving for reading signals from each pixel of the imaging pixel unit 27 through various control lines. The imaging pixel unit 27 is configured to include an imaging element (photoelectric conversion element) such as a photodiode and a pixel circuit for signal readout. The signal processing unit 28 performs various signal processing on the signal obtained from the imaging pixel unit 27. Among these, for example, the above-described semiconductor device is used for various circuits constituting part of the drive unit 26 or the imaging pixel unit 27.

<Examples of electronic devices>
The display device 2A, the imaging device 2B, and the like can be used for various types of electronic devices. FIG. 9 shows a functional block configuration of the electronic device 3. Examples of the electronic device 3 include a television device, a personal computer (PC), a smartphone, a tablet PC, a mobile phone, a digital still camera, and a digital video camera.

  The electronic device 3 includes, for example, the above-described display device 2A (or imaging device 2B) and the interface unit 30. The interface unit 30 is an input unit to which various signals, a power source, and the like are input from the outside. The interface unit 30 may also include a user interface such as a touch panel, a keyboard, or operation buttons.

  Although the embodiments have been described above, the present technology is not limited to the above-described embodiments and the like, and various modifications are possible. For example, the material and thickness of each layer described in the above embodiment and the like are not limited to those listed, and may be other materials and thicknesses.

  2 shows the case where the width of the oxygen permeation preventive film 13 is smaller than the width of the oxide semiconductor film 15, but the width of the oxygen permeation preventive film 13 is oxidized as shown in FIG. The width of the physical semiconductor film 15 may be larger.

  Furthermore, in the above-described embodiment and the like, the first wiring region 15W of the oxide semiconductor film 15 has been described as a specific example of the “first wiring” of the present technology. The oxide semiconductor film 15 provided with the channel region 15T may be provided separately.

  In addition, in the above-described embodiment and the like, the case where the gate insulating film 16 is provided over the entire surface of the substrate 11 has been described. However, the gate insulating film between the channel region and the gate electrode, the first wiring, and the second wiring An insulating film (third insulating film) between the wirings may be provided separately.

  The effects described in the above-described embodiments and the like are examples, and the effects of the present disclosure may be other effects or may include other effects.

In addition, this technique can also take the following structures.
(1)
A transistor having a gate electrode and a channel region of an oxide semiconductor film facing the gate electrode;
A first wiring provided in the same layer as the oxide semiconductor film and including the same constituent material as the oxide semiconductor film;
A second wiring provided in the same layer as the gate electrode;
A semiconductor device comprising: an oxygen permeation prevention film facing the second wiring with the first wiring interposed therebetween; and a stacked portion including a first insulating film between the oxygen permeation prevention film and the first wiring.
(2)
Furthermore, it has a second insulating film,
The semiconductor device according to (1), wherein the second insulating film, the oxygen permeation prevention film, and the first insulating film are provided in this order in the stacked portion.
(3)
The transistor further includes a gate insulating film between the oxide semiconductor film and the gate electrode,
The semiconductor device according to (2), wherein the stacked portion is further provided with a third insulating film in the same layer as the gate insulating film between the first wiring and the second wiring.
(4)
Furthermore, it has a substrate,
In the stacked portion, the second insulating film, the oxygen permeation preventive film, the first insulating film, the first wiring, the third insulating film, and the second wiring are provided in this order on the substrate. The semiconductor device according to (3).
(5)
The semiconductor device according to any one of (1) to (4), wherein the first wiring and the second wiring extend in a direction crossing each other.
(6)
Furthermore, it has a storage capacitor element,
The semiconductor device according to any one of (1) to (5), wherein a part of the oxygen permeation prevention film constitutes one electrode of the storage capacitor element.
(7)
A first contact portion where the first wiring and the second wiring are in contact;
The semiconductor device according to (6), including a second contact portion where the oxygen permeation preventive film and the second wiring are in contact with each other.
(8)
The semiconductor device according to (7), wherein the stacked portion, the first contact portion, and the second contact portion are adjacently disposed in this order.
(9)
The semiconductor device according to any one of (1) to (8), wherein the oxygen permeation prevention film includes a metal.
(10)
The semiconductor device according to any one of (1) to (9), wherein the second wiring includes the same constituent material as the gate electrode and has the same thickness as the gate electrode.
(11)
The semiconductor device according to any one of (1) to (10), wherein the first wiring has the same thickness as the oxide semiconductor film.
(12)
The semiconductor device according to any one of (1) to (11), wherein the first wiring is configured by a low resistance region of the oxide semiconductor film.
(13)
A display device and a semiconductor device for driving the display device;
The semiconductor device includes:
A transistor having a gate electrode and a channel region of an oxide semiconductor film facing the gate electrode;
A first wiring provided in the same layer as the oxide semiconductor film and including the same constituent material as the oxide semiconductor film;
A second wiring provided in the same layer as the gate electrode;
A display device comprising: an oxygen permeation prevention film facing the second wiring with the first wiring interposed therebetween; and a stacked portion including a first insulating film between the oxygen permeation prevention film and the first wiring.
(14)
A display device and a semiconductor device for driving the display device;
The semiconductor device includes:
A transistor having a gate electrode and a channel region of an oxide semiconductor film facing the gate electrode;
A first wiring provided in the same layer as the oxide semiconductor film and including the same constituent material as the oxide semiconductor film;
A second wiring provided in the same layer as the gate electrode;
An electron having a display device, comprising: an oxygen permeation preventive film facing the second interconnect with the first interconnect in between; and a stacked portion including a first insulating film between the oxygen permeation preventive film and the first interconnect machine.

  DESCRIPTION OF SYMBOLS 1,1A, 1B ... Semiconductor device, 10T, 10TB ... Transistor, 10L ... Laminate part, 11 ... Substrate, 12 ... Insulating film, 13, 13A ... Oxygen permeation prevention film, 14 ... Insulating interlayer film, 15 ... Oxide semiconductor film , 15T ... channel region, 15W ... first wiring region, 16 ... gate insulating film, 17 ... gate electrode, 18 ... second wiring, 2A ... display device, 2B ... imaging device, 3 ... electronic device, 21, 25 ... timing Control unit 22, 28 ... Signal processing unit, 23, 26 ... Drive unit, 24 ... Display pixel unit, 27 ... Imaging pixel unit, 30 ... Interface unit.

Claims (14)

A transistor having a gate electrode and a channel region of an oxide semiconductor film facing the gate electrode;
A first wiring provided in the same layer as the oxide semiconductor film and including the same constituent material as the oxide semiconductor film;
A second wiring provided in the same layer as the gate electrode;
A semiconductor device comprising: an oxygen permeation prevention film facing the second wiring with the first wiring interposed therebetween; and a stacked portion including a first insulating film between the oxygen permeation prevention film and the first wiring. Furthermore, it has a second insulating film,
The semiconductor device according to claim 1, wherein in the stacked portion, the second insulating film, the oxygen permeation prevention film, and the first insulating film are provided in this order. The transistor further includes a gate insulating film between the oxide semiconductor film and the gate electrode,
The semiconductor device according to claim 2, wherein a third insulating film in the same layer as the gate insulating film is further provided in the stacked portion between the first wiring and the second wiring. Furthermore, it has a substrate,
In the stacked portion, the second insulating film, the oxygen permeation preventive film, the first insulating film, the first wiring, the third insulating film, and the second wiring are provided in this order on the substrate. The semiconductor device according to claim 3. The semiconductor device according to claim 1, wherein the first wiring and the second wiring extend in a direction crossing each other. Furthermore, it has a storage capacitor element,
The semiconductor device according to claim 1, wherein a part of the oxygen permeation prevention film constitutes one electrode of the storage capacitor element. A first contact portion where the first wiring and the second wiring are in contact;
The semiconductor device according to claim 6, further comprising a second contact portion where the oxygen permeation preventive film and the second wiring are in contact with each other. The semiconductor device according to claim 7, wherein the stacked portion, the first contact portion, and the second contact portion are adjacently disposed in this order. The semiconductor device according to claim 1, wherein the oxygen permeation prevention film includes a metal. The semiconductor device according to claim 1, wherein the second wiring includes the same constituent material as that of the gate electrode and has the same thickness as the gate electrode. The semiconductor device according to claim 1, wherein the first wiring has the same thickness as the oxide semiconductor film. The semiconductor device according to claim 1, wherein the first wiring is configured by a low resistance region of the oxide semiconductor film. A display device and a semiconductor device for driving the display device;
The semiconductor device includes:
A transistor having a gate electrode and a channel region of an oxide semiconductor film facing the gate electrode;
A first wiring provided in the same layer as the oxide semiconductor film and including the same constituent material as the oxide semiconductor film;
A second wiring provided in the same layer as the gate electrode;
A display device comprising: an oxygen permeation prevention film facing the second wiring with the first wiring interposed therebetween; and a stacked portion including a first insulating film between the oxygen permeation prevention film and the first wiring. A display device and a semiconductor device for driving the display device;
The semiconductor device includes:
A transistor having a gate electrode and a channel region of an oxide semiconductor film facing the gate electrode;
A first wiring provided in the same layer as the oxide semiconductor film and including the same constituent material as the oxide semiconductor film;
A second wiring provided in the same layer as the gate electrode;
An electron having a display device, comprising: an oxygen permeation preventive film facing the second interconnect with the first interconnect in between; and a stacked portion including a first insulating film between the oxygen permeation preventive film and the first interconnect machine.

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