JP2018107401A - Substrate processing apparatus and substrate processing system - Google Patents

Abstract

A substrate processing apparatus capable of suppressing an increase in size while performing a plurality of processes using ultraviolet rays. A substrate processing apparatus includes an ultraviolet irradiation unit and substrate holding units. The ultraviolet irradiation means 2 is located at the boundary between the processing chambers 11 and 12 and can irradiate the processing chambers 11 and 12 with ultraviolet rays. The substrate holding means 31 is disposed in the processing chamber 11 and holds the substrate so as to face the ultraviolet irradiation means 2. The substrate holding means 32 is disposed in the processing chamber 12 and holds the substrate so as to face the ultraviolet irradiation means 2. [Selection] Figure 2

Description

  The present invention relates to a substrate processing apparatus and a substrate processing system.

  Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as “substrate”), various processes are performed on a substrate having an insulating film such as an oxide film using a substrate processing apparatus. For example, a process such as etching is performed on the surface of the substrate by supplying a processing liquid to the substrate having a resist pattern formed on the surface. In addition, after the etching or the like is finished, a process for removing the resist on the substrate is also performed.

  A substrate to be processed by the substrate processing apparatus is subjected to a dry process such as dry etching or plasma CVD (Chemical Vapor Deposition) before being carried into the substrate processing apparatus. In such a dry process, since charges are generated in the device and charged, the substrate is carried into the substrate processing apparatus in a charged state (so-called carry-in charging). In the substrate processing apparatus, when a processing liquid having a small specific resistance such as an SPM liquid is supplied onto the substrate, the charge in the device rapidly moves from the device to the processing liquid (that is, into the processing liquid). And the device may be damaged by the heat generated by the movement.

  Therefore, conventionally, an antistatic device for preventing the substrate from being charged has been used (for example, Patent Document 1). The antistatic device includes a gas supply path and an irradiation unit. The irradiation unit irradiates the glass substrate with ultraviolet rays. The gas supply path communicates with the space between the glass substrate and the irradiation unit. A gas containing oxygen is supplied to the space through the gas supply path. By irradiating the glass substrate with ultraviolet rays in this state, the surface of the glass substrate is hydrophilized, and charging of the glass substrate is prevented. Moreover, the oxygen in the space is changed to ozone by the ultraviolet rays. This ozone promotes hydrophilicity of the glass substrate.

  In semiconductor manufacturing, processing using a processing solution is performed on the surface of a substrate. Depending on the type of the treatment liquid, organic substances contained in the treatment liquid may remain on the substrate as impurities.

  Therefore, an apparatus for removing organic substances on a substrate using ultraviolet rays has been conventionally used (for example, Patent Document 2). In Patent Document 2, an excimer lamp is used. This excimer lamp can irradiate ultraviolet rays having a wavelength of, for example, 172 [nm]. The excimer lamp irradiates the ultraviolet light onto the substrate on which the organic matter is adhered. Thereby, organic substances on the substrate are decomposed and removed.

  In addition, patent documents 3-7 are shown as a technique relevant to this invention.

JP 2008-60221 A JP 2011-204944 A Japanese Patent Laid-Open No. 7-22530 JP 2011-233774 A JP 2011-129583 A JP 2010-251596 A JP 2011-124410 A

  In the substrate processing apparatus, when two processing chambers are formed and both the substrate holding part and the ultraviolet light source are provided in each processing chamber, the size of the entire apparatus increases.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing apparatus capable of suppressing an increase in size while performing a plurality of processes using ultraviolet rays.

  In order to solve the above problem, a substrate processing apparatus according to a first aspect includes ultraviolet irradiation means, first substrate holding means, and second substrate holding means. The ultraviolet irradiation means is located at the boundary between the first processing chamber and the second processing chamber, and can irradiate the first processing chamber and the second processing chamber with ultraviolet rays. The first substrate holding means is disposed in the first processing chamber and holds the substrate so as to face the ultraviolet irradiation means. The second substrate holding means is disposed in the second processing chamber and holds the substrate so as to face the ultraviolet irradiation means.

  The substrate processing apparatus concerning a 2nd aspect is a substrate processing apparatus concerning a 1st aspect, Comprising: The light-shielding means and the gas supply means are further provided. The light shielding means is disposed so as to partition the space between the ultraviolet irradiation means and the second substrate holding means into a first space on the ultraviolet irradiation means side and a second space on the second substrate holding means side. The atmosphere in the first space and the atmosphere in the second space are communicated while blocking the ultraviolet rays from the ultraviolet irradiation means. The gas supply means supplies gas to the second processing chamber.

  The substrate processing apparatus concerning a 3rd aspect is a substrate processing apparatus concerning a 2nd aspect, Comprising: A light-shielding means has the 1st board part and 2nd board part which have the light-shielding property about an ultraviolet-ray. At least one first through hole is formed in the first plate portion. At least one second through hole is formed in the second plate portion. The first plate portion and the second plate portion are spaced from each other in an arrangement relationship in which the position of at least one first through hole and the position of at least one second through hole are shifted from each other in a direction parallel to the respective plate surfaces. Arranged opposite each other.

  The substrate processing apparatus concerning a 4th aspect is a substrate processing apparatus concerning a 3rd aspect, Comprising: The 1st moving means is further provided. The first moving means includes at least one first through hole and at least one second through hole shifted from each other, and at least one first through hole and at least one second through hole positioned relative to each other. The first plate portion and the second plate portion are relatively moved between the second positions to be aligned.

  A substrate processing apparatus according to a fifth aspect is the substrate processing apparatus according to the fourth aspect, wherein at least one first through hole includes a plurality of first through holes, and at least one second through hole includes a plurality of first through holes. The second through hole is included. In the second position, the plurality of first through holes face the plurality of second through holes on a one-to-one basis.

  A substrate processing apparatus according to a sixth aspect is the substrate processing apparatus according to any one of the third to fifth aspects, further comprising third substrate holding means, wherein the third substrate holding means includes light shielding means and ultraviolet light. The substrate is held between the irradiation unit and the ultraviolet irradiation unit.

  A substrate processing apparatus according to a seventh aspect is the substrate processing apparatus according to the first aspect, and includes a first gas supply unit and a second gas supply unit. The first gas supply means supplies gas to the first processing chamber. The second gas supply means supplies gas to the second processing chamber.

  A substrate processing apparatus according to an eighth aspect is the substrate processing apparatus according to the seventh aspect, wherein at least one of the first gas supply unit and the second gas supply unit selectively selects a plurality of types of gases. Supply.

  A substrate processing apparatus according to a ninth aspect is the substrate processing apparatus according to any one of the first to eighth aspects, further comprising at least one reflecting means and a second moving means. The at least one reflecting means is disposed in at least one of the first processing chamber and the second processing chamber, and reflects the ultraviolet rays from the ultraviolet irradiation means to the other. The second moving means moves at least one reflecting means between a position where at least one reflecting means faces the ultraviolet irradiation means and a position where at least one reflecting means does not face the ultraviolet irradiation means.

  A substrate processing apparatus according to a tenth aspect is the substrate processing apparatus according to any one of the first to ninth aspects, further comprising a fourth substrate holding means. The fourth substrate holding means holds the substrate on which the low dielectric film is formed between the second substrate holding means and the ultraviolet irradiation means so as to face the ultraviolet irradiation means.

  A substrate processing apparatus according to an eleventh aspect is the substrate processing apparatus according to any one of the first to tenth aspects, wherein the first substrate holding means is a first main surface on which a low dielectric film is formed. The substrate having the second main surface on which the low dielectric film is not formed is held in a posture in which the second main surface faces the ultraviolet irradiation means.

  A substrate processing system according to a twelfth aspect includes a container holding unit for holding a container for containing a substrate, a substrate processing unit for performing processing using a processing liquid on the substrate, and the container holding unit. And a substrate passage portion through which a substrate reciprocating between the substrate processing portion and the substrate processing portion passes. A substrate processing apparatus according to any one of the first to eleventh aspects is provided in the substrate passage portion.

  A substrate processing system according to a thirteenth aspect is the substrate processing system according to the twelfth aspect, and includes a first transport unit and a second transport unit. The first transport unit delivers the substrate between each of the first substrate holding unit and the second substrate holding unit and the container holding unit. The second transport unit delivers the substrate between each of the first substrate holding unit and the second substrate holding unit and the substrate processing unit.

  A substrate processing system according to a fourteenth aspect is the substrate processing system according to the thirteenth aspect, in which the first transfer means transfers the substrate from the container holder to the first substrate holding means and the second substrate holding means. The substrate is transferred to one side from the other of the first substrate holding unit and the second substrate holding unit to the container holding unit. The second transport unit transfers the substrate from the one of the first substrate holding unit and the second substrate holding unit to the substrate processing unit, and from the substrate processing unit to the other of the first substrate holding unit and the second substrate holding unit. Pass the board.

  According to the substrate processing apparatus, processing using ultraviolet rays can be performed in the first processing chamber and the second processing chamber. In addition, the ultraviolet irradiation means can be shared by the first processing chamber and the second processing chamber. Therefore, the size of the substrate processing apparatus can be reduced as compared with the case where the ultraviolet irradiation means is separately disposed in the first processing chamber and the second processing chamber.

It is a figure showing an example of composition of a substrate processing system roughly. It is a figure which shows schematically an example of a structure of a substrate processing apparatus. It is a figure which shows schematically an example of a structure of a substrate processing apparatus. It is a figure which shows schematically an example of a structure of a light-shielding part. It is a flowchart which shows an example of operation | movement of a substrate processing system. It is a figure which shows schematically an example of a structure of a substrate processing apparatus. It is a figure which shows schematically an example of a structure of a substrate processing apparatus. It is a figure which shows schematically an example of a structure of a substrate processing apparatus. It is a figure which shows schematically an example of a structure of a substrate processing apparatus. It is a flowchart which shows an example of operation | movement of a substrate processing system. It is a figure which shows schematically an example of a structure of a substrate processing apparatus. It is a figure which shows schematically an example of a structure of a substrate processing apparatus. It is a figure which shows schematically an example of a structure of a substrate processing apparatus. It is a graph which shows an example of the relationship between the absorption factor of a low dielectric material film, and a wave number. It is a graph which shows an example of the relationship between the absorption factor of a low dielectric material film, and a wave number. It is a graph which shows an example of the relationship between surface charge and irradiation time. It is a graph which shows an example of the relationship between surface charge and irradiation time. It is a figure which shows schematically an example of a structure of a substrate processing apparatus.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

First embodiment.
<Example of overall configuration of substrate processing system>
FIG. 1 is a diagram schematically showing an example of the overall configuration of the substrate processing system 100. In FIG. 1 and the subsequent drawings, the size and number of each part are exaggerated or simplified as necessary for easy understanding.

  The substrate processing system 100 is an apparatus for performing various processes on a semiconductor substrate. The substrate processing system 100 includes, for example, a container holding unit 110, a substrate passage unit 120, and a substrate processing unit 130. The container holder 110 holds the substrate container. For example, a plurality of substrates are accommodated in the substrate container. In the example of FIG. 1, a plurality of container holders 110 are provided, and these are arranged along one direction parallel to the horizontal plane (hereinafter also referred to as X direction).

  The substrate processing unit 130 is an apparatus for performing a predetermined process on the substrate. In the example of FIG. 1, a plurality of substrate processing units 130 (in the illustrated example, substrate processing units 130a to 130d) are provided. Each of the substrate processing units 130a to 130d performs various processes on the substrate. For convenience of explanation, it is assumed that each substrate is subjected to processing in the order of the substrate processing units 130a to 130d. For example, the substrate processing unit 130a supplies a processing solution (a processing solution such as a chemical solution, a rinsing solution, or an IPA (isopropyl alcohol) solution) to the substrate. Thereby, the process according to a process liquid is performed with respect to a board | substrate. For subsequent processing in the substrate processing unit 130c, it is not desirable that charges be accumulated on the substrate. Further, organic substances may remain on the main surface of the substrate as impurities due to the processing by the substrate processing unit 130b (for example, processing using IPA), and it is desirable to remove such organic substances.

  The substrate passage unit 120 is located between the container holding unit 110 and each of the substrate processing units 130a to 130d. The unprocessed substrate is transferred from the container holding unit 110 to the substrate processing unit 130a via the substrate passing unit 120. The processed substrate processed by the substrate processing unit 130a is transferred from the substrate processing unit 130a to the container holding unit 110 or another substrate processing unit 130b via the substrate passing unit 120. The same applies to the time-sequential conveyance of the substrates between the substrate processing units 130b to 130d.

  The substrate passage unit 120 includes, for example, an indexer robot 121, a pass unit 122, and a transfer robot 123. The indexer robot 121 can reciprocate in the X direction on an indexer conveyance path 124 described below. The indexer transport path 124 is a transport path extending in the X direction adjacent to the plurality of container holders 110. The indexer robot 121 can stop at a position facing each container holder 110 in the indexer transport path 124.

  The indexer robot 121 has, for example, an arm and a hand. The hand is provided at the tip of the arm, and can hold the substrate or release the held substrate. The hand can reciprocate in the direction parallel to the horizontal plane and perpendicular to the X direction (hereinafter also referred to as the Y direction) by driving the arm. The indexer robot 121 moves the hand to the container holding unit 110 while facing the container holding unit 110 to take out an unprocessed substrate from the container holding unit 110, or to handle a processed substrate. It can be passed to the holding unit 110.

  The pass part 122 is located on the opposite side of the container holding part 110 with respect to the indexer transport path 124. For example, the pass part 122 may be formed at a position facing the central part in the X direction of the indexer transport path 124. For example, the path unit 122 may have a mounting table or a shelf on which the substrate is mounted. The indexer robot 121 can rotate the arm 180 degrees in the horizontal plane. As a result, the indexer robot 121 can move the hand to the pass unit 122. The indexer robot 121 can transfer the substrate taken out from the container holding unit 110 to the pass unit 122 or take out the substrate placed on the pass unit 122 from the pass unit 122.

  The transfer robot 123 is provided on the side opposite to the indexer transfer path 124 with respect to the path unit 122. A plurality (four in FIG. 1) of substrate processing units 130 are arranged so as to surround the transfer robot 123. In the example of FIG. 1, a fluid box 131 adjacent to each of the substrate processing units 130 is provided. The fluid box 131 can supply the processing liquid to the adjacent substrate processing unit 130 and can recover the used processing liquid from the substrate processing unit 130.

  Similarly to the indexer robot 121, the transfer robot 123 has an arm and a hand. The transfer robot 123 can take out the substrate from the pass unit 122 and pass the substrate to the pass unit 122. Further, the transfer robot 123 can transfer the substrate to each substrate processing unit 130 and take out the substrate from each substrate processing unit 130. The indexer robot 121 and the transfer robot 123 can be regarded as transfer means for transferring a substrate.

  With these configurations, for example, the following general operation can be performed. That is, the semiconductor substrates accommodated in the container holding unit 110 are sequentially transferred to the path unit 122 by the indexer robot 121. Then, the substrate is sequentially transferred to the substrate processing units 130a to 130d by the transfer robot 123, and is subjected to respective processing in the substrate processing units 130a to 130d. The substrate for which a series of processing has been completed is returned to the container holding unit 110 by the pass unit 122 and the indexer robot 121.

<Substrate processing equipment>
2 and 3 are diagrams schematically showing an example of the configuration of the substrate processing apparatus 10. The substrate processing apparatus 10 may be provided in the pass unit 122, for example. 2 shows a cross section perpendicular to the Y direction, for example, and FIG. 3 shows a cross section perpendicular to the X direction, for example. The substrate processing apparatus 10 is not necessarily provided in the path unit 122, and may be provided as the substrate processing unit 130d, for example. In other words, the substrate processing apparatus 10 may be provided as a part of the plurality of substrate processing units 130.

  The substrate processing apparatus 10 includes a chamber 1, an ultraviolet irradiator 2, substrate holding units 31 and 32, gas supply units 41 and 42, a light shielding unit 5, and exhaust units 61 and 62.

  The chamber 1 has processing chambers 11 and 12. For example, the processing chambers 11 and 12 are formed adjacent to each other in the vertical direction (hereinafter also referred to as the Z direction). An ultraviolet irradiator 2 is provided at the boundary between the processing chambers 11 and 12. That is, the processing chambers 11 and 12 are separated by the ultraviolet irradiator 2.

  The ultraviolet irradiator 2 generates ultraviolet rays and can irradiate both the processing chambers 11 and 12 with the ultraviolet rays. As the ultraviolet irradiator 2, for example, an excimer UV (ultraviolet) lamp can be adopted. The ultraviolet irradiator 2 includes, for example, a quartz tube filled with a discharge gas (for example, a rare gas or a rare gas halogen compound) and a pair of electrodes housed in the quartz tube. The discharge gas exists between the pair of electrodes. By applying a high voltage at a high frequency between the pair of electrodes, the discharge gas is excited and enters an excimer state. The discharge gas generates ultraviolet rays when returning from the excimer state to the ground state.

  The ultraviolet irradiator 2 may be formed in a flat plate shape, for example. The ultraviolet irradiator 2 is arranged, for example, in a posture in which the normal direction is along the Z direction. In other words, the ultraviolet irradiator 2 is a surface light source arranged horizontally. Alternatively, the ultraviolet irradiator 2 may be provided as an array of a plurality of columnar ultraviolet unit irradiators. For example, each of the plurality of ultraviolet unit irradiators is arranged such that its central axis is in the X direction. In this case, the plurality of ultraviolet unit irradiators are arranged in parallel along the Y direction. That is, in this aspect, a substantial surface light source is configured by horizontally arranging a plurality of ultraviolet unit irradiators.

  Protective quartz glass plates Ga and Gb may be provided on the processing chambers 11 and 12 side of the ultraviolet irradiator 2, respectively. That is, the ultraviolet irradiator 2 may be positioned between a pair of quartz glass plates Ga and Gb as a plate-like body that is transparent to ultraviolet rays and has heat resistance and corrosion resistance. These quartz glass plates Ga and Gb can protect the ultraviolet irradiator 2 against external forces and the atmosphere in the processing chambers 11 and 12.

  One substrate holder 31 is disposed in the first processing chamber 11. The substrate holding unit 31 holds the substrate W1 so that the main surface of the substrate W1 faces the ultraviolet irradiator 2. When the substrate W1 is a semiconductor substrate (that is, a semiconductor wafer), the substrate W1 has a substantially circular flat plate shape, and the substrate holding unit 31 holds the substrate W1 horizontally in such a manner as to support the outer edge portion of the substrate W1.

  The specific configuration of the substrate holding unit 31 is not particularly limited, but may be formed on the inner surface of the chamber 1, for example. In the example of FIG. 2, groove-shaped recesses are formed on a pair of inner side surfaces facing each other among the inner side surfaces of the chamber 1. These recesses are formed at substantially the same height in the Z direction. Then, both end portions in the diameter direction of the substrate W1 enter the recesses, respectively. The substrate W1 is supported on the vertically lower surface of the recess. That is, this concave portion functions as the substrate holding portion 31.

  The other substrate holding part 32 is provided in the second processing chamber 12. The substrate holding unit 32 holds the substrate W2 such that the main surface of the substrate W2 faces the ultraviolet irradiator 2. The substrate W2 also has a flat circular shape, for example. The substrate holding part 32 also holds the substrate W2 horizontally. Although the specific structure of the board | substrate holding | maintenance part 32 is not specifically limited, For example, you may have the structure similar to the board | substrate holding part 31. FIG.

  A gas supply unit 41 illustrated in FIG. 3 supplies gas to the first processing chamber 11. The gas supply unit 41 includes, for example, pipes 411 to 413, gas storage units 414 and 415, and on-off valves 416 and 417. On the side wall of the chamber 1, for example, a through hole 11a for supplying air is formed. The through hole 11 a communicates the processing chamber 11 and one end of the pipe 411. The other end of the pipe 411 is connected to one end of each of the pipes 412 and 413. The other end of the pipe 412 is connected to the gas accommodating part 414, and the other end of the pipe 413 is connected to the gas accommodating part 415. The gas storage portions 414 and 415 are, for example, cylinders and store different gases. For example, an inert gas (for example, nitrogen or argon) is stored in the gas storage unit 414, and oxygen is stored in the gas storage unit 415. Alternatively, each of the gas storage portions 414 and 415 may store a mixed gas containing a plurality of types of gas components. For example, air containing oxygen and nitrogen may be stored in each of the gas storage units 414 and 415, and the mixing ratio may be different in the gas storage units 414 and 415. The pipe 412 is provided with an on-off valve 416, and the pipe 413 is provided with an on-off valve 417. The on-off valves 416 and 417 switch opening and closing of the pipes 412 and 413, respectively.

  For example, when the on-off valve 416 is opened and the on-off valve 417 is closed, the gas (for example, nitrogen) stored in the gas storage unit 414 is supplied to the processing chamber 11. On the other hand, when the on-off valve 416 is closed and the on-off valve 417 is opened, the gas (for example, oxygen) stored in the gas storage unit 415 is supplied to the processing chamber 11.

  The exhaust part 61 has a pipe 611. On the side wall of the chamber 1, for example, an exhaust through-hole 11b is formed. The through hole 11 b communicates the processing chamber 11 and one end of the pipe 611. The gas in the processing chamber 11 is exhausted to the outside through the pipe 611.

  The gas supply unit 42 supplies gas to the processing chamber 12. The gas supply unit 42 includes pipes 421 to 423, gas storage units 424 and 425, and on-off valves 426 and 427. The pipes 421 to 423, the gas storage parts 424 and 425, and the on-off valves 426 and 427 are the same as the pipes 411 to 413, the gas storage parts 414 and 415, and the on-off valves 416 and 417, respectively, except for the communication destination at one end of the pipe 421. It is. One end of the pipe 421 communicates with the supply air through hole 12a. The through hole 12 a is formed, for example, on the side wall of the chamber 1, and communicates one end of the pipe 421 and the processing chamber 12.

  The gas supply unit 42 also selectively supplies different gases (for example, inert gas (such as nitrogen or argon) and oxygen) to the processing chamber 12 by appropriately controlling the opening and closing of the on-off valves 426 and 427. can do.

  The exhaust part 62 has a pipe 621. On the side wall of the chamber 1, for example, an exhaust through hole 12b is formed. The through hole 12 b communicates the processing chamber 12 and one end of the pipe 621. The gas in the processing chamber 12 is exhausted to the outside through the pipe 621.

  The light shielding unit 5 is disposed in the processing chamber 12. More specifically, the light shielding unit 5 is disposed so as to partition the space between the ultraviolet irradiator 2 and the substrate W2 into a space on the ultraviolet irradiator 2 side and a space on the substrate holding unit 32 side. In other words, the substrate holding part 32 holds the substrate W2 so that the main surface of the substrate W2 faces the ultraviolet irradiator 2 with the light shielding part 5 interposed therebetween. The light shielding unit 5 is appropriately fixed to the chamber 1.

  The light shielding unit 5 allows gas to pass while shielding ultraviolet rays. The light shielding portion 5 has plate portions 51 and 52. FIG. 4 is a diagram schematically showing a configuration of a part of the light-shielding portion 5 as viewed along the Z direction. The plate portions 51 and 52 have a plate shape. The plate portions 51 and 52 are formed with through holes 511 and 521, respectively. The through holes 511 and 521 respectively penetrate the plate portions 51 and 52 along the thickness direction. The plate parts 51 and 52 have a light shielding property for ultraviolet rays. For example, the plate portions 51 and 52 may include a filter for shielding ultraviolet light on the surface thereof. However, the filter is not provided in the through holes 511 and 521.

  These plate parts 51 and 52 are arrange | positioned with the attitude | position in which the thickness direction follows a Z direction. That is, the plate parts 51 and 52 are arranged horizontally. The plate portions 51 and 52 are arranged to face each other with a space therebetween. The plate part 51 is disposed on the ultraviolet irradiator 2 side with respect to the plate part 52. In the example of FIG. 4, a plurality of through holes 511 and 521 are formed. The plurality of through holes 511 are formed at the following positions. That is, a through hole 511 is formed at each of the four vertices of the virtual rectangle and the center of gravity of the rectangle, and the plurality of through holes 511 are dispersed so that this positional relationship repeats in the X direction and the Y direction. Is formed. The same applies to the plurality of through holes 521.

  The plate portions 51 and 52 are arranged such that the position of the through hole 511 and the position of the through hole 521 are shifted from each other in a direction parallel to the plate surface. That is, the plate portions 51 and 52 are arranged so that none of the through holes 511 is opposed to any of the through holes 521 in the Z direction.

  The space 12A between the light shielding unit 5 and the ultraviolet irradiator 2 and the space 12B between the light shielding unit 5 and the substrate W2 communicate with each other through the light shielding unit 5. Specifically, the spaces 12 </ b> A and 12 </ b> B communicate with each other through the space between the through holes 511 and 521 and the plate portions 51 and 52. Accordingly, the gas can flow from the space 12A through the light shielding portion 5 to the space 12B.

  On the other hand, since the positions of the through holes 511 and 521 are shifted from each other, the ultraviolet rays from the ultraviolet irradiator 2 are blocked by the light shielding portion 5. Specifically, a part of the ultraviolet rays from the ultraviolet irradiator 2 is blocked by the plate portion 51, and another part of the ultraviolet rays passes through the through hole 511, but is blocked by the plate portion 52. Therefore, the ultraviolet rays are not easily irradiated to the main surface of the substrate W2. That is, the light-shielding part 5 is a light-shielding and air-permeable plate-like element.

  In the example of FIG. 3, the air supply through hole 12a is provided at a position suitable for supplying gas to the space 12A. Since the space 12 </ b> A is irradiated with ultraviolet rays from the ultraviolet irradiator 2, the ultraviolet rays can be effectively applied to the gas supplied by the gas supply unit 42. When the gas supply unit 42 supplies oxygen, since ultraviolet rays effectively act on oxygen, ozone can be generated effectively. This ozone passes through the light shielding portion 5 and acts on the substrate W2.

  The chamber 1 is provided with a shutter (not shown) that functions as an entrance / exit for the substrates W1 and W2. When the shutter is opened, the processing chambers 11 and 12 communicate with the outside, and when the shutter is closed, the processing chambers 11 and 12 are sealed. The shutter may be provided individually for the processing chambers 11 and 12. That is, the processing chamber 11 may communicate with the outside by opening the first shutter, and the processing chamber 12 may communicate with the outside by opening the second shutter.

  Further, when the substrate processing apparatus 10 is disposed in the pass unit 122, for example, a shutter for the indexer robot 121 and a shutter for the transfer robot 123 may be provided. The indexer robot 121 and the transfer robot 123 can take in and out the substrate through corresponding shutters. Note that the indexer robot 121 and the transfer robot 123 can reciprocate the arm and the handle in the Z direction, respectively. As a result, the indexer robot 121 and the transfer robot 123 can move the arm and the handle to a height suitable for the substrate holders 31 and 32, respectively. Thereby, the indexer robot 121 and the transfer robot 123 can transfer the substrate to each of the substrate holding units 31 and 32 and take out the substrate from each of the substrate holding units 31 and 32.

  The ultraviolet irradiator 2, the on-off valves 416, 417, 426, 427 and the shutter are controlled by the control unit 7.

  The control unit 7 is an electronic circuit device, and may include, for example, a data processing device and a storage medium. The data processing device may be an arithmetic processing device such as a CPU (Central Processor Unit). The storage unit may include a non-temporary storage medium (for example, ROM (Read Only Memory) or a hard disk) and a temporary storage medium (for example, RAM (Random Access Memory)). For example, the non-temporary storage medium may store a program that defines processing executed by the control unit 7. When the processing device executes this program, the control unit 7 can execute the processing defined in the program. Of course, part or all of the processing executed by the control unit 7 may be executed by hardware.

  According to such a substrate processing apparatus 10, processing using ultraviolet rays for the substrate can be performed in the processing chambers 11 and 12, respectively. Moreover, the ultraviolet irradiator 2 can irradiate the processing chambers 11 and 12 with ultraviolet rays. That is, the ultraviolet irradiator 2 is shared by the processing chambers 11 and 12. Therefore, the size of the substrate processing apparatus 10 can be reduced and the manufacturing cost can be reduced as compared with the case where the individual ultraviolet irradiators 2 are provided in the processing chambers 11 and 12.

<Example of substrate processing operation>
Next, an example of a specific operation in the substrate processing apparatus 10 will be described. FIG. 5 is a flowchart showing an example of a specific operation of the substrate processing apparatus 10. FIG. 5 illustrates an example of the operation when the processing in the processing chambers 11 and 12 is performed in parallel. First, in step S1, the substrates W1 and W2 are placed in the chamber 1. Specifically, the shutter and the indexer robot 121 or the transfer robot 123 are controlled so that the control unit 7 performs the following operation. That is, the shutter of the chamber 1 is opened, the substrates W1 and W2 are disposed on the substrate holders 31 and 32 through the opened shutter, and then the shutter is closed.

  Next, in step S2, the control unit 7 opens, for example, the on-off valves 416 and 427 and closes the on-off valves 417 and 426. Thereby, the gas (here nitrogen) accommodated in the gas accommodating part 414 is supplied to the process chamber 11, and the gas (here oxygen) accommodated in the gas accommodating part 425 is supplied to the process chamber 12. The Step S2 may be executed before step S1.

  Next, in step S3, the control unit 7 causes the ultraviolet irradiator 2 to irradiate ultraviolet rays. Note that the control unit 7 may execute step S3 when the atmosphere in the processing chambers 11 and 12 (particularly the air between the substrates W1 and W2 and the ultraviolet irradiator 2) becomes a predetermined atmosphere. Good. For example, the control unit 7 measures the elapsed time from step S2. The elapsed time can be measured by a timer circuit such as a timer circuit. The controller 7 may determine whether or not this elapsed time is greater than a predetermined reference value, and may execute step S3 when making a positive determination. Alternatively, the atmosphere in the processing chambers 11 and 12 may be measured.

  FIG. 6 schematically shows the state of the substrate processing apparatus 10 in step S3. In FIG. 6, the fact that the ultraviolet irradiator 2 irradiates the processing chambers 11 and 12 with ultraviolet rays is indicated by double-ended arrows.

  This ultraviolet light is applied to the main surface of the substrate W1 in the processing chamber 11. Thereby, the electric charge accumulated on the substrate W1 is removed. One of the reasons why charges are removed is considered to be because the photoelectric effect caused by ultraviolet rays occurs in the substrate W1. As the wavelength of the ultraviolet light, for example, a wavelength of 252 [nm] or less can be adopted. This is because the charges on the substrate W1 can be effectively removed in this wavelength range. A wavelength within 172 ± 20 [nm] can be adopted as a more effective wavelength.

  Ultraviolet rays from the ultraviolet irradiator 2 are also applied to the processing chamber 12. This ultraviolet light is absorbed by oxygen between the ultraviolet irradiator 2 and the light shielding part 5. Thereby, ozone is generated. Ozone passes through the light shielding part 5 and acts on the main surface of the substrate W2. In the example of FIG. 6, this ozone flow is schematically represented by an arrow attached in the vicinity of the molecular formula. By the action of ozone on the main surface of the substrate W2, it is possible to oxidize organic substances present on the main surface of the substrate W2 and to decompose and remove the organic substances.

On the other hand, since the ultraviolet rays are blocked by the light shielding portion 5, the ultraviolet rays irradiated to the substrate W2 can be reduced or avoided. According to this, damage to the substrate W2 due to ultraviolet rays as described below can be reduced. For example, a low dielectric film may be formed on the main surface of the substrate W2. This low dielectric film is also called a low-k film. As the material for the low dielectric film, an organic compound containing SiO ₂ can be adopted. This organic compound has Si—C bonds. The bond energy of the Si—C bond is, for example, 293 [kJ / mol] at 0 [K]. On the other hand, the energy of ultraviolet light having a wavelength of 172 nm is 694 [kJ / min], which can be higher than the binding energy of Si—C. Therefore, the Si—C bond can be broken by irradiation of the main surface of the substrate W2 with ultraviolet rays. This can increase the k value (dielectric constant) of the low dielectric film. That is, damage (for example, cutting of Si—C bonds) may occur in the substrate W2 due to ultraviolet rays. When the k value increases, wiring delay occurs in the manufactured semiconductor device, and the response speed decreases. On the other hand, in the example of FIG. 6, since the light shielding part 5 blocks ultraviolet rays, the damage to the substrate W2 can be suppressed.

  Referring to FIG. 5 again, in step S4, control unit 7 determines whether or not the process should be terminated. For example, the control unit 7 may determine that the process should be terminated when the elapsed time from step S3 exceeds a predetermined time. When determining that the process should not be terminated, the control unit 7 executes Step S4 again. If it is determined that the process should be terminated, the control unit 7 stops the ultraviolet irradiator 2 in step S5. Next, in step S6, the control unit 7 closes the on-off valve 427 and opens the on-off valve 426. As a result, the gas (here, nitrogen) stored in the gas storage unit 424 is supplied to the processing chamber 12. Thereby, ozone is exhausted appropriately.

  As described above, according to this operation, it is possible to perform processing in the processing chambers 11 and 12 while using the single ultraviolet irradiator 2.

<Irradiation on the back of the substrate>
When the low dielectric film is formed on one main surface (hereinafter also referred to as the front surface) of the substrate W1 and the low dielectric film is not formed on the other main surface (hereinafter also referred to as the back surface), the substrate holding unit 31 is The substrate W1 may be held in a posture in which the back surface of the substrate W1 is directed toward the ultraviolet irradiator 2. In other words, the control unit 7 may control the indexer robot 121 or the transfer robot 123 to pass the substrate W1 to the substrate holding unit 31 so that the back surface of the substrate W1 faces the ultraviolet irradiator 2. In the example of FIG. 2, the substrate holder 31 is located vertically above the ultraviolet irradiator 2. Therefore, the indexer robot 121 or the transfer robot 123 may transfer the substrate W1 with its surface vertically upward, and place the substrate W1 on the substrate holding unit 31 in this posture.

  According to this, as compared with the case where the surface of the substrate W1 on which the low dielectric film is formed faces the ultraviolet irradiator 2, damage to the low dielectric film due to ultraviolet rays can be reduced. This is because ultraviolet rays are not directly applied to the low dielectric film.

<Round-trip movement via the path>
When the substrate processing apparatus 10 is disposed in the path unit 122, the substrate is either in the forward path from the container holding unit 110 to the substrate processing unit 130 or in the return path from the substrate processing unit 130 to the container holding unit 110. Through the substrate processing apparatus 10. Therefore, for example, the substrate processing system 100 may cause the substrate to pass through one of the processing chambers 11 and 12 on the forward path, and pass the other side of the processing chamber 11 or 12 to the substrate on the return path. In other words, for example, the indexer robot 121 may pass the substrate from the container holding unit 110 to one of the substrate holding units 31 and 32 and pass the substrate from the other of the substrate holding units 31 and 32 to the container holding unit 110. . The transfer robot 123 may transfer the substrate from the one side to the substrate processing unit 130 and transfer the substrate from the substrate processing unit 130 to the other side. According to this, in the reciprocating conveyance in the substrate processing system 100, both of the processing chambers 11 and 12 can be processed.

  As a specific example, the control unit 7 may control each component of the substrate processing system 100 so as to perform the operation described below. For example, the processing chamber 11 is used in the outward path. Specifically, the indexer robot 121 takes out the substrate from the container holding unit 110 and places the substrate on the substrate holding unit 31 in the processing chamber 11. This substrate is subjected to charge removal processing in the processing chamber 11 as described above. The substrate from which the charge has been removed is transferred to the substrate processing unit 130 by the transfer robot 123. The substrate processing unit 130 performs processing using the processing liquid on the main surface of the substrate. Since the substrate charge has already been removed, the substrate processing unit 130 is less prone to arcing due to the processing liquid, and this processing can be performed appropriately.

  Depending on the type of treatment liquid, organic substances remain on the main surface of the substrate. Therefore, the processing chamber 12 is used on the return path. Specifically, the transfer robot 123 takes out the processed substrate from the substrate processing unit 130 and places the substrate on the substrate holding unit 32 in the processing chamber 12. This substrate is subjected to the organic substance removing process in the processing chamber 12 as described above. Thereby, the organic substance on the substrate is removed. The indexer robot 121 takes out the substrate from the processing chamber 12 and passes the substrate to the container holding unit 110.

  According to this, suitable processing before and after the processing of the substrate processing unit 130 can be performed in the pass unit 122.

<Oxygen supply to the processing chamber 11>
In the above example, nitrogen is supplied to the processing chamber 11 in step S2. However, this is not necessarily the case. For example, when the main purpose is removal of organic substances, oxygen may be supplied to the processing chamber 11. Specifically, the control unit 7 closes the on-off valve 416 and opens the on-off valve 417. Accordingly, the gas (here, oxygen) stored in the gas storage unit 415 is supplied to the processing chamber 11.

  FIG. 7 schematically shows an example of the state of the substrate processing apparatus 10 when oxygen is supplied to the processing chambers 11 and 12. In this case, a relatively large amount of ozone is also generated in the processing chamber 11, and this ozone acts on the main surface of the substrate W1. Since ozone acts on the main surface of the substrate W1, organic substances present on the main surface of the substrate W1 can be effectively removed.

  Since ozone is generated in the processing chamber 11 in the above-described operation, the supply of oxygen to the processing chamber 11 may be stopped and nitrogen may be supplied in step S6. Thereby, the ozone in the process chamber 11 can be exhausted appropriately.

<Modification>
In the above example, although the light shielding part 5 is disposed, the light shielding part 5 is not necessarily required when the main surface of the substrate W2 may be irradiated with ultraviolet rays. Moreover, in the above-mentioned example, although the gas supply parts 41 and 42 can selectively supply a different kind of gas, this is not an essential requirement. In short, the ultraviolet irradiator 2 may be shared by the processing chambers 11 and 12. This is because the effect of reducing the size of the substrate processing apparatus 10 can be brought about.

Second embodiment.
8 and 9 are diagrams schematically showing an example of the configuration of the substrate processing apparatus 10A. The substrate processing apparatus 10A has a moving mechanism 8 and is different from the substrate processing apparatus 10 in this respect. 8 and 9, the gas supply parts 41 and 42 and the exhaust parts 61 and 62 are not shown. These may be omitted in other drawings referred to later.

  The moving mechanism 8 is disposed in the processing chamber 12. The moving mechanism 8 can relatively move the plate portions 51 and 52. More specifically, the moving mechanism 8 includes a first position where the through holes 511 and 521 are displaced from each other (see FIG. 8), and a second position where the through holes 511 and 521 face each other in the Z direction (see FIG. 9). The plate portions 51 and 52 are moved relatively to each other. The operation of the moving mechanism 8 is controlled by the control unit 7, for example. As the moving mechanism 8, for example, a known uniaxial stage (also called an X-axis stage) can be adopted. For example, the moving mechanism 8 moves the plate part 51.

  Further, the distribution of the through holes 511 in the plate portion 51 and the distribution of the through holes 521 in the plate portion 52 are different only in the formation positions, and the distribution forms correspond to each other. That is, the sizes of the individual through holes 511 and 521 are the same, and the formation interval and the arrangement direction are also the same. Therefore, if one of the plate portions 51 and 52 is shifted in the horizontal direction (Y direction) with respect to the other, the formation positions of the through holes 511 and 521 are aligned with each other.

  When the moving mechanism 8 stops the plate portion 52 at the first position (FIG. 8) with respect to the plate portion 51, the ultraviolet rays from the ultraviolet irradiator 2 are transmitted by the light shielding portion 5 as in the first embodiment. Blocked. On the other hand, when the moving mechanism 8 stops the plate portion 52 at the second position (FIG. 9) with respect to the plate portion 51, the ultraviolet rays from the ultraviolet irradiator 2 pass through the through holes 511 and 521 and pass through the substrate. The main surface of W2 is irradiated. Therefore, ultraviolet rays can be applied to the main surface of the substrate W2.

  As described above, according to the substrate processing apparatus 10 </ b> A, whether or not the main surface of the substrate W <b> 2 is irradiated with ultraviolet rays can be controlled by the positional relationship between the plate portions 51 and 52. For example, the control unit 7 receives information on whether or not a low dielectric film is formed on the main surface of the substrate W2 from the outside. This information may be included in a so-called recipe (work instruction) that defines the processing content for the substrate. Then, when the low dielectric film is formed on the main surface of the substrate W2, the controller 7 moves the moving mechanism 8 so that the plate portion 52 stops at the first position (FIG. 8) with respect to the plate portion 51. May be controlled. On the other hand, when the low dielectric film is not formed on the main surface of the substrate W2, the control unit 7 moves the moving mechanism 8 so that the plate unit 52 stops at the second position (FIG. 9) with respect to the plate unit 51. May be controlled. According to this, since the main surface of the substrate W2 is irradiated with ultraviolet rays, it is possible to remove charges due to, for example, the photoelectric effect.

  As described above, the form of the through-hole distribution is common to the two plate portions 51 and 52, and the plurality of through-holes 511 respectively face the plurality of through-holes 521 in the Z direction at the second position. That is, the plurality of through holes 511 and 521 face each other one-on-one. In the example illustrated in FIG. 4, the relative positional relationship of the plurality of through holes 521 viewed from the Z direction is the same as the relative positional relationship of the plurality of through holes 511. According to this, the plurality of through holes 511 can be opposed to the plurality of through holes 521 on a one-to-one basis by relatively moving the plate portions 51 and 52 in the horizontal direction. Thereby, the light-shielding part 5 can transmit an ultraviolet-ray in a wider area | region. Therefore, the main surface of the substrate W2 can be irradiated with ultraviolet rays in a wider range.

  Of course, the shape, size, and positional relationship of the plurality of through-holes 511 and 521 may be set as appropriate, and are not necessarily limited to the mode of FIG. For example, a plurality of slit-like through holes that are long in the X direction may be arranged along the Y direction instead of the circular through holes 511. The same applies to the through hole 521. At this time, the pitch of the slit-like through holes in the plate portion 51 and the pitch of the slit-like through holes in the plate portion 52 are set to be substantially the same. According to this, by moving the plate part 52 in the Y direction with respect to the plate part 51, the through hole in the plate part 51 and the through hole in the plate part 52 are in one-to-one correspondence in the Z direction.

  The positional alignment of the two sets of through-holes in the second position does not necessarily require complete matching. In other words, even if there is a part that does not coincide with each other, as long as the positions of many through-holes coincide with each other and can transmit ultraviolet rays sufficient for processing, it does not matter. Further, in each of the plate portions 51 and 52, the size of each through hole is small and the interval between the through holes adjacent in the horizontal direction is narrow, and each of the plate portions 51 and 52 is close to a “net”, It belongs to the concept of “a plate-like member having a through hole”. Even if the number of through-holes in each of the plate portions 51 and 52 is one, as long as it realizes a spatial selective light transmission distribution like a reciprocating meandering slit, It doesn't matter. These conditions regarding the shape and distribution of the through-holes can be commonly applied not only to this embodiment but also to other embodiments.

  The substrate holder 32 may rotate the substrate W2 with the Z direction as the rotation axis. Specifically, the substrate holding unit 32 may include a stage (not shown) that holds the substrate W2 and a rotation mechanism (not shown) that rotates the stage. The rotation axis passes through the center of the substrate W2, for example. As such a substrate holding part 32, what is called a spin chuck is employable. According to this, the ultraviolet rays that have passed through the light shielding portion 5 can be more uniformly applied to the main surface of the substrate W2 in a wider range.

<Example of substrate processing operation>
FIG. 10 is a flowchart showing an example of the operation of the substrate processing apparatus 10A. FIG. 10 illustrates an operation when the charge removal process for removing charges by irradiating the main surface of the substrate with ultraviolet rays is performed in parallel in the process chambers 11 and 12. First, in step S11, the substrates W1 and W2 are placed on the substrate holders 31 and 32, respectively, as in step S1.

  Next, in step S12, the control unit 7 opens the on-off valves 416 and 426 and closes the on-off valves 417 and 427. Thereby, the gas (here, nitrogen) accommodated in the gas accommodating part 414 is supplied to the processing chamber 11, and the gas (here, nitrogen) accommodated in the gas accommodating part 424 is supplied to the processing chamber 12. The

  Next, in step S13, the control unit 7 controls the moving mechanism 8 to relatively move the plate units 51 and 52 so that the through holes 511 and 521 face each other in the Z direction. The execution order of steps S11 to S13 is not limited to this, and may be changed as appropriate.

  Next, in step S14, the control unit 7 causes the ultraviolet irradiator 2 to irradiate ultraviolet rays. Note that step S14 may be executed when the atmosphere in the processing chambers 11 and 12 becomes a desired atmosphere, as in step S3.

  FIG. 11 is a diagram illustrating an example of the configuration of the substrate processing apparatus 10A. FIG. 11 schematically shows the state of the substrate processing apparatus 10A in step S14. Nitrogen is supplied to the processing chambers 11 and 12. In FIG. 11, the fact that the ultraviolet irradiator 2 irradiates the processing chambers 11 and 12 with ultraviolet rays is indicated by an arrow having a starting point in the ultraviolet irradiator 2. The ultraviolet irradiator 2 irradiates the main surface of the substrate W1 in the processing chamber 11 and irradiates the main surface of the substrate W2 through the through holes 511 and 521 in the processing chamber 12.

  According to this, since the main surfaces of the substrates W1 and W2 can be irradiated with ultraviolet rays, the charges accumulated on the substrates W1 and W2 can be removed by, for example, the photoelectric effect. During the irradiation with ultraviolet rays, the control unit 7 may rotate the substrate W2 to the substrate holding unit 32.

Third embodiment.
FIG. 12 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 10B. The substrate processing apparatus 10B has a substrate holding part 33, and is different from the substrate processing apparatus 10 in this respect. The substrate holding part 33 is disposed in the processing chamber 12, for example, and can hold the substrate W2 such that the main surface of the substrate W2 faces the ultraviolet irradiator 2. Further, the substrate holding unit 33 holds the substrate W2 at a position different from the substrate held by the substrate holding unit 32. For example, the substrate holder 33 holds the substrate W2 at a position closer to the ultraviolet irradiator 2 than the substrate holder 32. As a more specific example, the substrate holding unit 33 holds the substrate W <b> 2 between the ultraviolet irradiator 2 and the light shielding unit 5. Although the specific configuration of the substrate holding unit 33 is not particularly limited, for example, the substrate holding unit 33 may have the same configuration as the substrate holding unit 32 (for example, a recess formed on the inner surface of the chamber 1).

  When the substrate W2 is placed on the substrate holding unit 33, the main surface of the substrate W2 can be irradiated without passing through the light shielding unit 5. According to this, it is possible to irradiate ultraviolet rays to a wider range of the substrate W2. Therefore, the charges on the substrate W2 can be removed more effectively. In addition, since the substrate W2 can be placed near the ultraviolet irradiator 2, the intensity of ultraviolet rays on the main surface of the substrate W2 can be improved. According to this, the electric charge of the board | substrate W2 can be removed more rapidly.

Fourth embodiment.
FIG. 13 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 10C. The substrate processing apparatus 10C has a configuration in which the light shielding unit 5 is omitted from the substrate processing apparatus 10B. Since the substrate processing apparatus 10 </ b> C has the substrate holders 32 and 33, the substrate W <b> 2 can be selectively placed on one of the substrate holders 32 and 33.

  By the way, when the main surface of the substrate W2 on which the low dielectric film is formed is irradiated with ultraviolet rays, the low dielectric film may be damaged as described above. The amount of damage (for example, the amount of increase in k value) increases as the intensity of ultraviolet rays increases.

  The intensity of ultraviolet rays is lower as the distance from the ultraviolet irradiator 2 is longer. The substrate holder 32 is far from the ultraviolet irradiator 2, and the substrate holder 33 is close to the ultraviolet irradiator 2. Therefore, the intensity of the ultraviolet light on the substrate W2 held by the substrate holding part 32 is lower than the intensity of the ultraviolet light on the substrate W2 held by the substrate holding part 33. Therefore, when the substrate W2 is held by the substrate holding part 32, damage to the low dielectric film can be reduced.

  On the other hand, the higher the intensity of the ultraviolet light on the substrate W2, the shorter the charge can be removed. Therefore, the charge removal rate is higher when the substrate W2 is held by the substrate holding unit 33 than when the substrate W2 is held by the substrate holding unit 32.

Hereinafter, the relationship between the amount of damage to the low dielectric film and the irradiation time, and the relationship between charge removal and the irradiation time will be considered. Here, the amount of damage to the low dielectric film is evaluated by the change in the light absorption rate of the low dielectric film. 14 and 15 schematically show an example of the relationship between the absorptance of the low dielectric film and the wave number of light. Porous organosilicate (OSG2.4) is adopted as the low dielectric film. The wave number corresponding to the Si—CH ₃ bond in this low dielectric film is 1274 [cm ⁻¹ ].

FIG. 14 shows the relationship when the intensity of ultraviolet rays on the main surface of the substrate is high, and FIG. 15 shows the relationship when the intensity of ultraviolet rays on the main surface of the substrate is low. For example, the intensity of ultraviolet light on the main surface of the substrate is 19 [mm / cm ² ] in FIG. 14 and 2 [mm / cm ² ] in FIG. Here, the intensity of the ultraviolet light is adjusted by adjusting the distance between the substrate and the ultraviolet irradiator. For example, the distance is 3 [mm] in FIG. 14 and 17.6 [mm in FIG. ].

  In FIG. 14, the absorption rate before ultraviolet irradiation is shown by a curve R0, and the absorption rates after 10 seconds, 20 seconds and 30 seconds after ultraviolet irradiation are shown by curves R11 to R13, respectively. In FIG. 15, the absorption rates after 5 minutes, 7 minutes and 10 minutes after the ultraviolet irradiation are shown by curves R21 to R23, respectively.

  16 and 17 schematically show an example of the relationship between the potential (also referred to as surface charge) on the main surface of the substrate and the irradiation time. In FIG. 16, the unit of time indicated by the horizontal axis is seconds, and in FIG. 17, the unit of time indicated by the horizontal axis is minutes. FIG. 16 shows the above relationship when the intensity of ultraviolet rays on the main surface of the substrate is high, and FIG. 17 shows the above relationship when the intensity of ultraviolet rays on the main surface of the substrate is low. 16 is the same as the ultraviolet intensity in FIG. 14, and the ultraviolet intensity in FIG. 17 is the same as the ultraviolet intensity in FIG.

  By the way, since the photoelectric effect is unlikely to occur in the low dielectric film, the charge removal by ions may be used. For example, oxygen ions can be used. The oxygen ions can be generated by absorbing ultraviolet rays by oxygen. When the oxygen ions are employed in the substrate, the charge on the substrate can be removed. Here, the oxygen concentration in the space between the substrate and the ultraviolet irradiator was 20.9 [%].

As shown in FIGS. 16 and 17, when the intensity of ultraviolet rays is high, charges are quickly removed by irradiation with ultraviolet rays. Therefore, it is desirable that the intensity of ultraviolet light is high only from the viewpoint of charge removal. However, when the intensity of ultraviolet rays is high, as shown in FIG. 14, a change in absorption rate at a wave number of 1274 [cm ⁻¹ ] appears after 10 seconds from the start of irradiation with ultraviolet rays (curve R11). That is, the low dielectric film is damaged after 10 seconds from the start of ultraviolet irradiation. The surface charge at this time is smaller than −50 [V] in the example of FIG.

On the other hand, when the intensity of ultraviolet rays is low, as shown in FIG. 15, there is almost no change in the absorption rate at wave number 1274 [cm ⁻¹ ] even after 5 minutes from the start of ultraviolet irradiation (curve R21), and changes after 7 minutes. Appears (curve R22). That is, almost no damage is caused to the substrate within 5 minutes from the start of ultraviolet irradiation. Then, as shown in FIG. 17, the surface charge after 5 minutes from the start of ultraviolet irradiation is larger than −30 [V] and smaller than −20 [V]. That is, it can be seen that the charge can be removed as compared with the surface charge after 10 seconds shown in FIG.

  As described above, it can be seen that by reducing the intensity of ultraviolet rays on the main surface of the substrate, charges can be removed while suppressing damage to the low dielectric film.

  Therefore, when the low dielectric film is formed on the main surface of the substrate W2, the control unit 7 controls the indexer robot 121 or the transfer robot 123 so as to pass the substrate W2 to the substrate holding unit 32. According to this, charges can be effectively removed while suppressing damage to the low dielectric film.

  On the other hand, when the low dielectric film is not formed on the main surface of the substrate W2, the control unit 7 controls the indexer robot 121 or the transfer robot 123 so as to pass the substrate W2 to the substrate holding unit 33. According to this, the electric charge of the board | substrate W2 can be removed more rapidly.

  As described above, when the low dielectric film is formed on the substrate W2, the substrate W2 is held by the substrate holder 32, and when the low dielectric film is not formed on the substrate W2, the substrate W2 is the substrate holder. 33. Information on whether or not the low dielectric film is formed on the substrate W2 may be received from an external device, for example.

Fifth embodiment.
FIG. 18 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 10D. The substrate processing apparatus 10 </ b> D is different from the substrate processing apparatus 10 in that it includes reflection portions 91 and 92 and moving mechanisms 93 and 94.

  The reflection unit 91 and the moving mechanism 93 are disposed in the processing chamber 11. The reflection part 91 has a reflection surface, and reflects ultraviolet rays on the reflection surface. The reflection surface of the reflection part 91 should just be formed of the member with a high reflectance about an ultraviolet-ray, for example, aluminum with low surface roughness may be sufficient. For example, the reflecting portion 91 is formed in a plate shape, for example, and one main surface thereof functions as a reflecting surface.

  The moving mechanism 93 moves the reflecting portion 91 between the following two positions. The first position is a position where the reflection portion 91 faces the ultraviolet irradiator 2 (hereinafter referred to as a first reflection position). At the first reflecting position, the reflecting surface of the reflecting portion 91 faces the ultraviolet irradiator 2. In this state, the ultraviolet rays irradiated from the ultraviolet irradiator 2 are reflected to the ultraviolet irradiator 2 by the reflecting portion 91. In other words, the 1st reflection position should just be a position where the reflection part 91 can reflect an ultraviolet-ray to the ultraviolet irradiation device 2. FIG. The second position is a position where the reflecting portion 91 does not face the ultraviolet irradiator 2.

  The reflection unit 92 and the moving mechanism 94 are disposed in the processing chamber 12. The reflection part 92 has a reflection surface, and reflects ultraviolet rays on the reflection surface. The reflection surface of the reflection part 92 should just be formed of the member with the high reflectance about an ultraviolet-ray, for example, aluminum with low surface roughness may be sufficient. For example, the reflecting portion 92 is formed in a plate shape, for example, and one main surface thereof functions as a reflecting surface.

  The moving mechanism 94 moves the reflecting portion 92 between the following two positions. The first position is a position where the reflecting portion 92 faces the ultraviolet irradiator 2 (hereinafter referred to as a second reflecting position). At the second reflecting position, the reflecting surface of the reflecting portion 92 faces the ultraviolet irradiator 2. In this state, the ultraviolet rays irradiated from the ultraviolet irradiator 2 are reflected to the ultraviolet irradiator 2 by the reflector 92. In other words, the second reflection position may be a position where the reflection unit 92 can reflect the ultraviolet rays to the ultraviolet irradiator 2. The second position is a position where the reflecting portion 92 does not face the ultraviolet irradiator 2.

  The reflecting surfaces of the reflecting portions 91 and 92 may have a width that can be opposed over the entire surface of the ultraviolet irradiator 2. According to this, ultraviolet rays can be reflected to the ultraviolet irradiator 2 in a wider range.

  The ultraviolet irradiator 2 can pass ultraviolet rays incident from the outside. For example, in a quartz glass case, a pair of electrodes are opposed in the horizontal direction (for example, the X direction or the Y direction), and a discharge gas is filled therebetween. According to this, the ultraviolet rays pass through the quartz glass in the Z direction. That is, the ultraviolet rays from the outside pass through the ultraviolet irradiator 2 in the Z direction.

  The moving mechanism 93 is, for example, a uniaxial stage, and may move the reflecting portion 91 linearly, for example. Alternatively, the moving mechanism 93 may move the reflecting portion 91 on a circular arc in the horizontal plane. In this case, for example, the moving mechanism 93 includes a rotating body that rotates about the Z direction as a rotation axis, a connecting portion having one end connected to the rotating body, and the other end connected to the reflecting portion 91. It may be. The connecting portion extends in the radial direction of the rotating body. According to this, the reflection part 91 moves on an arc with rotation of a rotary body. The moving mechanism 94 is the same. The operations of the moving mechanisms 93 and 94 are controlled by the control unit 7.

  When both of the reflecting portions 91 and 92 are not opposed to the ultraviolet irradiator 2, the ultraviolet irradiator 2 can irradiate the substrate W1 and the substrate W2 (or the light shielding portion 5) with ultraviolet rays.

  When the reflection unit 91 faces the ultraviolet irradiator 2 and the reflection unit 92 does not face the ultraviolet irradiator 2, the ultraviolet rays irradiated from the ultraviolet irradiator 2 to the processing chamber 11 are reflected by the reflection unit 91. The reflected ultraviolet light passes through the ultraviolet irradiator 2 and is irradiated to the processing chamber 12. Thereby, the quantity of the ultraviolet rays irradiated to the processing chamber 12 can be improved. In this case, no processing is performed on the substrate in the processing chamber 11.

  Similarly, when the reflection unit 91 does not face the ultraviolet irradiator 2 and the reflection unit 92 faces the ultraviolet irradiator 2, the ultraviolet rays irradiated from the ultraviolet irradiator 2 to the processing chamber 12 are reflected by the reflection unit 92, It passes through the ultraviolet irradiator 2 and is irradiated to the processing chamber 11. Thereby, the quantity of the ultraviolet-ray irradiated to the process chamber 11 can be improved. In this case, no processing is performed on the substrate in the processing chamber 12.

  As described above, when the processing is performed on the substrate in one of the processing chambers 11 and 12 and the processing is not performed on the substrate on the other side, the other processing chamber that does not need the ultraviolet rays needs to be irradiated with ultraviolet rays. One processing chamber can be supplied. According to this, ultraviolet rays can be used effectively.

  Further, as described in the fourth embodiment, it is desirable to reduce the intensity of ultraviolet rays on the substrate on which the low dielectric film is formed. Therefore, the control unit 7 may control the moving mechanisms 93 and 94 according to the presence or absence of the low dielectric film.

  For example, when processing the substrate W1 on which the low dielectric film is not formed in the processing chamber 11, the control unit 7 controls the moving mechanism 93 so that the reflection unit 91 does not face the ultraviolet irradiator 2, and the reflection is performed. The moving mechanism 93 is controlled so that the part 92 faces the ultraviolet irradiator 2. Thereby, since the intensity | strength of the ultraviolet-ray in the main surface of the board | substrate W1 can be improved, the electric charge stored in the board | substrate W1 can be removed rapidly.

  On the other hand, when processing the substrate W1 on which the low dielectric film is formed in the processing chamber 11, the control unit 7 moves the moving mechanism 93 so that the reflecting units 91 and 92 do not face the ultraviolet irradiator 2. , 94 are controlled. According to this, since the intensity of the ultraviolet light on the main surface of the substrate W1 can be reduced, it is possible to effectively remove the charge stored on the substrate W1 while reducing damage to the low dielectric film. A similar operation can be applied when processing is performed in the processing chamber 12.

  In the first to fifth embodiments, examples of the treatment using ultraviolet rays in the processing chambers 11 and 12 include the charge removal process (static elimination process) and the organic substance removal process. However, the treatment using ultraviolet rays is not limited to these. For example, a treatment for removing the water repellent remaining on the substrate may be employed. For example, the surface of the substrate may be rinsed with pure water in order to remove the chemical solution on the substrate. When this pure water is dried, the pattern formed on the substrate may collapse due to surface tension. In order to prevent this, a water repellent may be supplied to the surface of the substrate. The water repellent remaining after drying of pure water is removed by irradiation with ultraviolet rays. It is also removed by the action of ozone.

1 Chamber 2 Ultraviolet irradiation means (ultraviolet irradiation device)
31-33 Substrate holding means (substrate holding unit)
5 Shading means (shading part)
8 Moving means (moving mechanism)
DESCRIPTION OF SYMBOLS 10 Substrate processing apparatus 11,12 Processing chamber 41,42 Gas supply means (gas supply part)
51, 52 Plate portion 91, 92 Reflection means (reflection portion)
93, 94 moving means (moving mechanism)
DESCRIPTION OF SYMBOLS 100 Substrate processing system 110 Container holding part 120 Substrate passage part 121 Transfer means (indexer robot)
123 Conveying means (conveying robot)
130 Substrate processing part 511, 521 Through hole

Claims (14)

An ultraviolet irradiation means located at a boundary between the first processing chamber and the second processing chamber and capable of irradiating the first processing chamber and the second processing chamber with ultraviolet rays;
First substrate holding means disposed in the first processing chamber and holding the substrate so as to face the ultraviolet irradiation means;
A substrate processing apparatus comprising: a second substrate holding unit that is disposed in the second processing chamber and holds the substrate so as to face the ultraviolet irradiation unit. The substrate processing apparatus according to claim 1,
The space between the ultraviolet irradiation means and the second substrate holding means is arranged so as to partition into a first space on the ultraviolet irradiation means side and a second space on the second substrate holding means side, A light shielding means for communicating the atmosphere in the first space and the atmosphere in the second space while blocking ultraviolet rays from the ultraviolet irradiation means;
A substrate processing apparatus, further comprising gas supply means for supplying gas to the first space. The substrate processing apparatus according to claim 2,
The light shielding means has a first plate portion and a second plate portion having a light shielding property for ultraviolet rays,
At least one first through hole is formed in the first plate portion,
At least one second through hole is formed in the second plate portion,
The first plate portion and the second plate portion have an arrangement relationship in which the position of the at least one first through hole and the position of the at least one second through hole are shifted from each other in a direction parallel to the respective plate surfaces. A substrate processing apparatus disposed opposite to each other with a space therebetween. The substrate processing apparatus according to claim 3,
The first position where the at least one first through hole and the at least one second through hole are offset from each other, and the at least one first through hole and the at least one second through hole are aligned with each other. A substrate processing apparatus, further comprising first moving means for relatively moving the first plate portion and the second plate portion between the second position and the second position. The substrate processing apparatus according to claim 4,
The at least one first through hole includes a plurality of first through holes;
The at least one second through hole includes a plurality of second through holes;
The substrate processing apparatus, wherein, in the second position, the plurality of first through holes face the plurality of second through holes on a one-to-one basis. In the substrate processing apparatus according to any one of claims 3 to 5,
A substrate processing apparatus further comprising third substrate holding means for holding the substrate so as to face the ultraviolet irradiation means between the light shielding means and the ultraviolet irradiation means. The substrate processing apparatus according to claim 1,
First gas supply means for supplying gas to the first processing chamber;
A substrate processing apparatus comprising: a second gas supply unit configured to supply a gas to the second processing chamber. The substrate processing apparatus according to claim 7,
The substrate processing apparatus, wherein at least one of the first gas supply unit and the second gas supply unit selectively supplies a plurality of types of gases. In the substrate processing apparatus according to any one of claims 1 to 8,
Disposed in at least one of the first processing chamber and the second processing chamber, and at least one reflecting means for reflecting ultraviolet rays from the ultraviolet irradiation means to the other,
Second moving means for moving the at least one reflecting means between a position where the at least one reflecting means faces the ultraviolet irradiating means and a position where the at least one reflecting means does not face the ultraviolet irradiating means. And a substrate processing apparatus. In the substrate processing apparatus according to any one of claims 1 to 9,
A substrate processing apparatus, further comprising a fourth substrate holding unit that holds the substrate on which the low dielectric film is formed so as to face the ultraviolet irradiation unit between the second substrate holding unit and the ultraviolet irradiation unit. In the substrate processing apparatus as described in any one of Claims 1-10,
The first substrate holding means has a substrate having a first main surface on which a low dielectric film is formed and a second main surface on which a low dielectric film is not formed, and the second main surface is directed to the ultraviolet irradiation means. A substrate processing apparatus that holds in a posture. A container holding unit for holding a container for containing a substrate;
A substrate processing unit for performing processing using the processing liquid on the substrate;
A substrate passage part through which a substrate reciprocating between the container holding part and the substrate processing part passes,
The substrate processing system in which the substrate processing apparatus as described in any one of Claims 1-11 is provided in the said substrate passage part. The substrate processing system according to claim 12, comprising:
First transfer means for transferring a substrate between each of the first substrate holding means and the second substrate holding means and the container holding portion;
A substrate processing system comprising: each of the first substrate holding unit and the second substrate holding unit, and a second transfer unit that delivers a substrate to and from the substrate processing unit. The substrate processing system according to claim 13,
The first transport unit transfers the substrate from the container holding unit to one of the first substrate holding unit and the second substrate holding unit, and from the other of the first substrate holding unit and the second substrate holding unit. Pass the substrate to the container holder,
The second transport unit transfers the substrate from the one of the first substrate holding unit and the second substrate holding unit to the substrate processing unit, and the first substrate holding unit and the second substrate from the substrate processing unit. A substrate processing system for delivering a substrate to the other holding means.

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