JP2018195822A - Semiconductor processing tape and method for manufacturing semiconductor processing tape - Google Patents

Abstract

Provided is a semiconductor processing tape capable of achieving a good usable period even when an acrylic pressure-sensitive adhesive layer is laminated on an adhesive layer for an underfill film.
A semiconductor processing tape 1 includes a base layer 2, an adhesive layer 3 provided on the base layer, and an adhesive layer made of an epoxy resin, an acrylic resin, or the like provided on the adhesive layer. 4. The pressure-sensitive adhesive layer contains an acrylic copolymer and a crosslinking agent, and the acid value of the acrylic copolymer is 1.0 mgKOH / g or less.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor processing tape and a method for manufacturing a semiconductor processing tape, and more particularly to a technique for a semiconductor processing tape in which an adhesive layer and an adhesive layer are laminated.

  In recent years, in semiconductor chip mounting methods, for the purpose of shortening the process, improving yield, etc., it has been studied to attach an adhesive layer called an underfill film on bumps (convex electrodes) of a semiconductor wafer ( For example, Patent Document 1). Further, it has been studied to attach an adhesive layer having a thickness smaller than the bump height to the semiconductor wafer.

  Furthermore, a semiconductor processing tape in which an adhesive layer and an adhesive layer (for example, a slightly adhesive tape) are laminated may be used for the purpose of further improving the embedding property of the adhesive layer with respect to bump bumps. However, when an acrylic pressure-sensitive adhesive layer is laminated on the adhesive layer, the reaction of the curing component in the adhesive layer may proceed excessively, and the usable period of the semiconductor processing tape may be shortened. is there.

Japanese Patent Laying-Open No. 2015-70043

  The present invention has been proposed in view of such a state of the art, and a semiconductor capable of achieving a good usable period even when an acrylic pressure-sensitive adhesive layer is laminated on an adhesive layer. The object is to provide a processing tape.

The tape for semiconductor processing according to the present invention comprises a base material layer, a pressure-sensitive adhesive layer provided on the base material layer, and an adhesive layer provided on the pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer comprises The acrylic copolymer contains an acrylic copolymer and a crosslinking agent, and the acrylic copolymer has an acid value of 1.0 mgKOH / g or less.
The present invention is the tape for semiconductor processing, wherein the acrylic copolymer is composed of two or more monomers selected from butyl acrylate, 2-ethylhexyl acrylate, ethyl acrylate, vinyl acetate and 2-hydroxyethyl (meth) acrylate. is there.
This invention is a tape for semiconductor processing in which the said adhesive bond layer contains at least 1 sort (s) of an epoxy resin and an acrylic resin.
The present invention is the tape for semiconductor processing, wherein the acid value of the acrylic copolymer is 0.5 mgKOH / g or more.
The present invention is a tape for semiconductor processing in which the crosslinking agent is an isocyanate.
The present invention is the tape for semiconductor processing, wherein the adhesive layer contains a film forming component, an epoxy resin, and a curing agent.
The present invention is the tape for semiconductor processing, wherein the film-forming component is an acrylate polymer having an epoxy group.
The present invention is a semiconductor processing tape in which the curing agent contains an acid anhydride.
The present invention provides a step of preparing a first laminate having an adhesive layer on a first substrate layer, and a second laminate having an adhesive layer on a second substrate layer; Adhesion provided on the first base material layer and the first base material layer by laminating the adhesive layer of the first laminate and the adhesive layer of the second laminate. A step of producing a tape for semiconductor processing comprising an adhesive layer and an adhesive layer provided on the adhesive layer, wherein the adhesive layer contains an acrylic copolymer and a crosslinking agent. And the acid value of the said acrylic copolymer is a manufacturing method of the tape for semiconductor processing whose 1.0 mgKOH / g or less.

  According to the present invention, even when an acrylic pressure-sensitive adhesive layer is laminated on the adhesive layer, it is possible to suppress the progress of the reaction of the curing component in the adhesive layer, and the good use period is long. It is possible to provide a semiconductor processing tape capable of achieving the above.

It is sectional drawing which shows an example of the tape for semiconductor processing which concerns on this Embodiment. (A) (b): It is process drawing which shows an example of the manufacturing method of the tape for semiconductor processing which concerns on this Embodiment. It is a perspective view which shows typically an example of the process of affixing the tape for semiconductor processing on a wafer. It is a perspective view which shows typically an example of the process of dicing a wafer. It is a perspective view which shows typically an example of the process of picking up a semiconductor chip. (A): Cross-sectional view schematically showing the semiconductor chip and circuit board before mounting, (b): Cross-sectional view schematically showing the semiconductor chip and circuit board after thermocompression bonding.

  Hereinafter, embodiments of the present invention will be described in detail.

<Tape for semiconductor processing>
For example, as shown in FIG. 1, a semiconductor processing tape 1 according to the present embodiment is provided on a base material layer 2, an adhesive layer 3 provided on the base material layer 2, and an adhesive layer 3. Adhesive layer 4.
The pressure-sensitive adhesive layer 3 contains an acrylic copolymer and a crosslinking agent, and the acid value of the acrylic copolymer is 1.0 mgKOH / g or less. As described above, when the acid value of the acrylic copolymer in the pressure-sensitive adhesive layer 3 is 1.0 mgKOH / g or less, before the semiconductor processing tape 1 is used, the curing component (for example, , Epoxy resin or acrylic resin) can be prevented from proceeding excessively, so that the usable period of the semiconductor processing tape 1 can be made good (long).

<Base material layer>
The base material layer 2 is for maintaining the shape of the adhesive layer 4, and may be a single layer or may have a multilayer structure in which layers made of different materials are laminated.
As the base material layer 2, for example, a plastic film such as PET (Poly Ethylene Terephthalate), polyethylene, polypropylene, or polyester, or a base material made of paper, cloth, nonwoven fabric, or the like can be used.
Moreover, as the base material layer 2, for example, a layered structure in which a release agent such as silicone is applied to PET, OPP (Oriented Polypropylene), PMP (Poly-4-methylpentene-1), PTFE (Polytetrafluoroethylene) or the like is used. It can also be used.

  The surface of the base material layer 2 on the side of the pressure-sensitive adhesive layer 3 may be subjected to surface roughening treatment such as mat treatment, corona treatment, and plasma treatment for the purpose of controlling adhesion with the pressure-sensitive adhesive layer 3. .

  The thickness of the base material layer 2 can be set as appropriate, and can be, for example, 25 to 200 μm.

<Adhesive layer>
In the present embodiment, the pressure-sensitive adhesive layer 3 is formed on the surface of the base material layer 2 to improve the embedding property of the adhesive layer 4 with respect to bump bumps. The pressure-sensitive adhesive layer 3 contains an acrylic copolymer and a crosslinking agent. Moreover, the adhesive layer 3 may further contain, for example, a photopolymerization initiator as other components.

  The upper limit range of the acid value of the acrylic copolymer is 1.0 mgKOH / g or less, preferably 0.8 mgKOH / g or less. Here, the acid value of the acrylic copolymer refers to a value measured by a method defined in JISK0070. By the acid value of the acrylic copolymer being 1.0 mgKOH / g or less, it is possible to prevent the reaction with the curing component in the adhesive layer 4 from proceeding too much before the semiconductor processing tape 1 is used. Therefore, the usable period of the semiconductor processing tape 1 can be improved.

  The lower limit range of the acid value of the acrylic copolymer is preferably 0.1 mgKOH / g or more, more preferably 0.3 mgKOH / g or more, and further preferably 0.5 mgKOH / g or more. When the acid value of the acrylic copolymer is 0.1 mgKOH / g or more, it can be suppressed that the reaction component with the crosslinking agent is too small. Thereby, for example, the embedding property of the adhesive layer 4 with respect to the bump step can be improved.

  The acrylic copolymer includes a structural unit derived from a (meth) acrylate component. Examples of the (meth) acrylate component include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, butoxyethyl (meth) acrylate, and isoamyl. (Meth) acrylate, hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, heptyl (meth) acrylate, octyl heptyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, And lauryl (meth) acrylate.

  In addition to the above-mentioned (meth) acrylate component, the acrylic copolymer is used as another monomer component copolymerizable with the above-described (meth) acrylate component for the purpose of adjusting the cohesive strength and heat resistance of the pressure-sensitive adhesive layer 3. A corresponding structural unit may be further included. As other monomer components, for example, a carboxyl group-containing monomer (for example, (meth) acrylic acid), a hydroxyl group-containing monomer (for example, 2-hydroxyethyl (meth) acrylate), vinyl acetate, or the like can be used.

  Specifically, the acrylic copolymer includes structural units corresponding to two or more monomers selected from butyl acrylate, 2-ethylhexyl acrylate, ethyl acrylate, vinyl acetate, and 2-hydroxyethyl (meth) acrylate. It is more preferable that it contains a structural unit corresponding to butyl acrylate, ethyl acrylate, 2-ethylhexyl acrylate, vinyl acetate and 2-hydroxyethyl (meth) acrylate.

  The acrylic copolymer can be obtained by polymerizing the (meth) acrylate component and other monomer components described above. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. Examples of the polymerization reaction of the acrylic copolymer include radical polymerization, cation polymerization, anion polymerization, living radical polymerization, living cation polymerization, living anion polymerization, and coordination polymerization.

  The number average molecular weight of the acrylic copolymer is not particularly limited, but can be, for example, about 300,000 to 3,000,000.

  The cross-linking agent is used, for example, for controlling the adhesive force of the pressure-sensitive adhesive layer 3. The cross-linking agent is preferably a compound having two or more functional groups capable of reacting with a functional group (for example, a hydroxyl group, a carboxyl group, an amino group, etc.) introduced into the acrylic copolymer in one molecule. In particular, isocyanates are preferable as the crosslinking agent from the viewpoint of forming a stronger crosslinked structure. As isocyanates, for example, compounds having two or more isocyanate groups in one molecule can be used. Specifically, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, diphenylmethane-4,4′-diisocyanate, diphenylmethane-2,4 Examples include '-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, and lysine isocyanate. Moreover, as isocyanates, the isocyanate group containing oligomer obtained by making the above-mentioned isocyanate compound and the polyhydric alcohol which has a 2 or more hydroxyl group in 1 molecule can also be used. By using such an isocyanate-containing oligomer, the crosslinked structure of the pressure-sensitive adhesive layer 3 can be made denser.

<Adhesive layer>
In the present embodiment, the adhesive layer 4 is formed on the surface of the pressure-sensitive adhesive layer 3. The adhesive layer 4 can be used, for example, as a dicing tape that protects and fixes the wafer during dicing of the wafer and holds it during pick-up, as will be described later.

  The resin composition of the adhesive layer 4 is not particularly limited. For example, a thermosetting resin such as a thermal anion curable type, a thermal cation curable type, or a thermal radical curable type, or a photo curable such as a photo cation curable type or a photo radical curable type. A mold resin or a combination of these can be used.

  As an example of the material of the adhesive layer 4, a thermosetting adhesive composition containing a film-forming component, an epoxy resin, a curing agent, a curing aid, and an inorganic filler will be described.

  As the film forming component, resins such as acrylate polymers, phenoxy resins, epoxy resins, modified epoxy resins, and urethane resins can be used. These film forming components may be used alone or in combination of two or more. Among these, an acrylate polymer having an epoxy group is suitably used from the viewpoint of film formation state, connection reliability, and the like.

  Examples of the epoxy resin include dicyclopentadiene type epoxy resin, glycidyl ether type epoxy resin, glycidyl amine type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, spiro ring type epoxy resin, Naphthalene type epoxy resin, biphenyl type epoxy resin, terpene type epoxy resin, tetrabromobisphenol A type epoxy resin, cresol novolac type epoxy resin, phenol novolak type epoxy resin, α-naphthol novolak type epoxy resin, brominated phenol novolak type epoxy resin And so on. These epoxy resins may be used alone or in combination of two or more. Among these, a dicyclopentadiene type epoxy resin is preferably used from the viewpoint of high adhesion and heat resistance.

  As a hardening | curing agent, a well-known thing can be used as a hardening | curing agent of an epoxy resin, For example, it is preferable to use an acid anhydride. Since the acid anhydride has a flux function for removing the oxide film on the solder surface, excellent connection reliability can be obtained. Examples of the acid anhydride include aliphatic acid anhydrides such as tetrapropenyl succinic anhydride and dodecenyl succinic anhydride, alicyclic acid anhydrides such as hexahydrophthalic anhydride and methyltetrahydrophthalic anhydride, phthalic anhydride, and trihydric anhydride. Examples thereof include aromatic acid anhydrides such as merit acid and pyromellitic anhydride. Among these curing agents, it is preferable to use an aliphatic acid anhydride from the viewpoint of solder connectivity. A hardening | curing agent may be used individually by 1 type, or may be used in combination of 2 or more types.

  Curing aids include imidazoles such as 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 1,8-diazabicyclo (5,4,0) undecene-7 salt (DBU salt) ), Tertiary amines such as 2- (dimethylaminomethyl) phenol, phosphines such as triphenylphosphine, and metal compounds such as tin octylate.

  The inorganic filler can be used for the purpose of adjusting the fluidity of the resin layer in the adhesive layer 4 at the time of pressure bonding. As the inorganic filler, silica, talc, titanium oxide, calcium carbonate, magnesium oxide, or the like can be used. An inorganic filler may be used independently and may be used in combination of 2 or more type.

  The adhesive composition may further contain an acrylic resin, an organic peroxide, or the like as other components depending on the purpose.

  As the acrylic resin, for example, monofunctional (meth) acrylate, bifunctional or higher (meth) acrylate can be used. Examples of the monofunctional (meth) acrylate include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, i-propyl (meth) acrylate, and n-butyl (meth) acrylate. Bifunctional or higher (meth) acrylates include bisphenol F-EO-modified di (meth) acrylate, bisphenol A-EO-modified di (meth) acrylate, trimethylolpropane PO-modified (meth) acrylate, and polyfunctional urethane (meth) acrylate. Etc. An acrylic resin may be used independently and may be used in combination of 2 or more type.

  Examples of organic peroxides include peroxyesters, peroxyketals, hydroperoxides, dialkyl peroxides, diacyl peroxides, and peroxydicarbonates. An organic peroxide may be used independently and may be used in combination of 2 or more type.

  The thickness of the adhesive layer 4 can be, for example, 10 to 80% of the height of a bump (a soldered electrode 22 to be described later: see FIG. 6A) formed on the wafer. By making the height 10% or more of the bump height, it becomes easier to obtain the effect of reinforcing the bump. Moreover, the adhesive layer 4 can penetrate a bump more easily by setting it as 80% or less of the height of a bump.

  The semiconductor processing tape according to the present invention is not limited to the above-described configuration, and other layers may be formed between the surface of each layer or between adjacent layers as long as the effects of the present invention are not impaired. .

<Manufacturing method of semiconductor processing tape>
Next, an example of a method for manufacturing a semiconductor processing tape according to the present embodiment will be described.
2A and 2B are process diagrams showing an example of a method for manufacturing a semiconductor processing tape according to the present embodiment.
As shown in FIG. 2 (a), first, the first laminate 5 in which the above-described pressure-sensitive adhesive layer 3 is provided on the first base material layer 2a and the above-mentioned on the second base material layer 2b. A second laminated body 6 provided with the adhesive layer 4 is prepared.
Here, the first base material layer 2a and the second base material layer 2b are made of the above-described materials, and may be made of the same material or different materials.
As described above, the pressure-sensitive adhesive layer 3 of the first laminate 5 contains an acrylic copolymer and a crosslinking agent, and the acrylic copolymer has an acid value of 1.0 mgKOH / g or less. .

  The 1st laminated body 5 is obtained by apply | coating an adhesive composition on the 1st base material layer 2a, and drying this adhesive composition and forming the adhesive layer 3, for example. As described above, the pressure-sensitive adhesive composition contains an acrylic copolymer having an acid value of 1.0 mgKOH / g or less and a crosslinking agent.

  The adhesive layer 4 of the second laminate 6 is prepared by, for example, preparing the thermosetting adhesive composition described above, and using a bar coater, the adhesive composition is peeled off from the second base material. It is obtained by applying on the layer 2b and drying.

The pressure-sensitive adhesive layer 3 of the first laminate 5 obtained by such a process and the adhesive layer 4 of the second laminate 6 are opposed to each other as shown in FIG. The first and second laminates 5 and 6 are pressed by the pressure-sensitive adhesive layer 3 of the first laminate 5 and the adhesive layer 4 of the second laminate 6 as shown in FIG. Is laminated to obtain a semiconductor processing tape 1A having the same configuration as that of the semiconductor processing tape 1 shown in FIG.
In addition, what is necessary is just to peel the 2nd base material layer 2b, when using this semiconductor processing tape 1A. Thereby, it becomes the same structure as the tape 1 for semiconductor processing shown in FIG.
As described above, the pressure-sensitive adhesive layer 3 of the first laminate 5 of the present embodiment contains an acrylic copolymer and a crosslinking agent, and the acid value of the acrylic copolymer is 1.0 mgKOH / g. Consists of: With this configuration, the semiconductor processing tape 1A has a peel strength (25 ° C., T-type peel test) between the adhesive layer 4 and the pressure-sensitive adhesive layer 3 after 48 hours from the production of 160 g / 5 cm. Or less than 140 g / 5 cm. Moreover, the lower limit value of the peel strength between the adhesive layer 4 and the pressure-sensitive adhesive layer 3 is not particularly limited, but can be set to, for example, 100 g / 5 cm or more.

<Method for Manufacturing Semiconductor Device>
Next, an example of a semiconductor device manufacturing method using the semiconductor processing tape 1 described above will be described. The manufacturing method of the semiconductor device of this example includes, for example, a semiconductor processing tape attaching process, a dicing process, a semiconductor chip mounting process, and a thermocompression bonding process.

In the semiconductor processing tape sticking step, for example, as shown in FIG. 3, the wafer 10 is positioned and fixed by a jig 11 having a ring-shaped or frame-shaped frame having a diameter larger than the diameter of the wafer 10. The semiconductor processing tape 1 is affixed to the surface of the electrode side surface 10a which is the side.
In the example shown in FIG. 3, the above-described semiconductor processing tape 1 is placed on a support base (not shown) with the adhesive layer 4 facing upward, and a jig 11 and a wafer 10 are placed on the semiconductor processing tape 1. Place. In this case, the electrode side surface 10a provided with a scribe line (not shown) of the wafer 10 is brought into close contact with the adhesive processing layer 1 side of the semiconductor processing tape 1.
The adhesive layer 4 of the semiconductor processing tape 1 functions as a dicing tape that protects and fixes the wafer 10 when the wafer 10 is diced and holds the wafer 10 during pick-up.
In the case of this example, the semiconductor processing tape 1 can be adhered to the entire electrode side surface 10a of the wafer 10 by cutting unnecessary portions, for example. Thereafter, the layers other than the adhesive layer 4 (the base material layer 2 and the pressure-sensitive adhesive layer 3) are removed. As a result, as shown in FIG. 4, only the adhesive layer 4 remains on the electrode side surface 10 a of the wafer 10. A large number of ICs (Integrated Circuits) are formed in the wafer 10, and solder is provided on the electrode side surface 10a of the wafer 10 for each semiconductor chip 20 divided by scribe lines as shown in FIG. 6A, for example. An attached electrode 22 is provided.

  In the dicing process, for example, as shown in FIGS. 4 and 5, the blade 13 is caused to travel while being pressed along a scribe line (not shown) on the electrode side surface 10 a of the wafer 10 to move the wafer 10 and the adhesive layer 4. Cutting and dividing into individual semiconductor chips 21 with tape for semiconductor processing.

  The semiconductor chip 21 with a tape for semiconductor processing obtained by the above dicing process is bonded and held on the adhesive layer 4 by pressing the lower end of the pickup device 14 against the adhesive layer 4. Thereafter, by raising the pickup device 14, the semiconductor chip 21 with the tape for semiconductor processing is picked up (see FIG. 5).

In the semiconductor chip mounting step, for example, as shown in FIG. 6A, the semiconductor chip 21 with a semiconductor processing tape and the circuit board 30 are arranged so that the adhesive layer 4 faces the circuit board 30.
Further, the semiconductor chip 21 with the semiconductor processing tape is aligned and arranged so that the soldered electrode 22 and the counter electrode 31 of the circuit board 30 face each other.
Then, using a heating bonder (not shown), the adhesive layer 4 is heated and pressed under conditions of a predetermined temperature, pressure, and time that cause fluidity but does not cause main curing. Mounted on the substrate 30.

  The temperature condition at the time of mounting can be, for example, 30 ° C. or more and 155 ° C. or less. Moreover, pressure conditions can be 50 N or less, for example. Further, the time condition can be, for example, not less than 0.1 seconds and not more than 10 seconds.

In the thermocompression bonding step, the solder portion 23 at the tip of the soldered electrode 22 of the semiconductor chip 21 with a semiconductor processing tape 21 is melted to be in a metal-bondable state, and the adhesive layer 4 is completely cured.
Thus, for example, as shown in FIG. 6B, the soldered electrode 22 of the semiconductor chip 20 and the counter electrode 31 of the circuit board 30 are metal-bonded, and the adhesive layer 4 is completely cured, whereby the semiconductor chip The 20 soldered electrodes 22 and the counter electrode 31 of the circuit board 30 can be electrically and mechanically connected.

  Examples of the present invention will be described below. In addition, this invention is not limited to these Examples (Experimental Examples 1-4).

[Acid value]
The acid value of the acrylic copolymer used for the pressure-sensitive adhesive layer described later was measured by the method defined in JISK0070. The results are shown in Table 1.

[Peel strength]
For the tape for semiconductor processing after being produced under the conditions of Experimental Examples 1 to 4 and 48 hours after the production, a T-type peel test was performed at 25 ° C., and the peel strength between the adhesive layer and the pressure-sensitive adhesive layer ( g / 5 cm) was measured using a peel strength tester (manufactured by Orientec Co., Ltd., trade name: Tensilon). Practically, the peel strength is preferably 160 g / 5 cm or less. The results are shown in Table 1.

[Usage period]
About the semiconductor processing tape produced on the conditions of Experimental Examples 1-4, the usable period (days) in normal temperature was evaluated. The usable period refers to the number of days from the day of tape production (completion) until the peel strength between the pressure-sensitive adhesive layer and the adhesive layer of the tape exceeds 160 g / 5 cm. Practically, it is preferable that the usable period at room temperature is 2 days or more. The results are shown in Table 1.

[Judgment]
About the tape for semiconductor processing produced on the conditions of Experimental Examples 1-4, the case where a usable period was 2 days or more was evaluated as OK (pass), and the other was evaluated as NG (failure).

<Experimental example 1>
[Adhesive layer]
As shown in Table 1, 80 parts by mass of butyl acrylate (BA), 10 parts by mass of ethyl acrylate (EA), 5 parts by mass of vinyl acetate (VAc), and 5 parts by mass of 2-hydroxyethyl methacrylate (HEMA) An acrylic copolymer having an acid value of 0.8 mgKOH / g was prepared. 2 parts by mass of a polyisocyanate compound (product name: Coronenate L, manufactured by Tosoh Corporation) as a crosslinking agent was added to 100 parts by mass of the acrylic copolymer to prepare an adhesive composition. The pressure-sensitive adhesive composition was applied on a PET substrate and dried in an oven at 80 ° C. for 5 minutes to prepare a pressure-sensitive adhesive layer having a thickness of 25 μm.

[Adhesive layer]
5.0 parts by mass of acrylic ester polymer (product name: Teisan Resin SG-P3, manufactured by Nagase ChemteX), 10.0 parts by mass of phenoxy resin (product name: PKHH, manufactured by Union Carbide), epoxy resin (product name) : HP7200H, manufactured by Dainippon Ink Chemical Co., Ltd.) 15.0 parts by mass, acid anhydride (product name: MH-700, manufactured by Shin Nippon Chemical Co., Ltd.) 9.0 parts by mass, imidazole (product name: 2MZ-A, Shikoku Chemicals) Kogyo Co., Ltd.) 0.3 parts by mass, acrylic resin (product name: DCP, Shin-Nakamura Chemical Co., Ltd.) 24.0 parts by mass, polymerization initiator (product name: Perbutyl Z, manufactured by NOF Corporation) 0.3 mass Part, filler A (product name: SO-E5, manufactured by Admatex) 31.5 parts by mass, and filler B (product name: Aerosil RY200, manufactured by Nippon Aerosil Co., Ltd.) 5.0 parts by mass, and adhesive layer The resin composition was prepared. This was applied onto a peeled PET substrate using a bar coater and dried in an oven at 80 ° C. for 3 minutes to prepare an adhesive layer having a thickness of 40 μm.

[Tape for semiconductor processing]
The said adhesive layer and the said adhesive bond layer are laminated | stacked by the method demonstrated with reference to Fig.2 (a) (b), The tape for semiconductor processing provided with a PET base material, an adhesive layer, and an adhesive bond layer Was made.

<Experimental example 2>
Among the monomer types of the acrylic copolymer used for the pressure-sensitive adhesive layer, butyl acrylate is changed to 2-ethylhexyl acrylate (2EHA) in an equivalent amount, and the acid value of the acrylic copolymer is 0.5 mgKOH / g. Except for this, a semiconductor processing tape was produced under the same conditions as in Experimental Example 1.

<Experimental example 3>
Among the acrylic copolymer monomer species used in the pressure-sensitive adhesive layer, 5 parts by mass of vinyl acetate is changed to 4 parts by mass of vinyl acetate and 1 part by mass of acrylic acid (AA), and the acid of the acrylic copolymer is changed. A semiconductor processing tape was produced under the same conditions as in Experimental Example 1 except that the value was 11 mgKOH / g.

<Experimental example 4>
Of the monomer types of the acrylic copolymer used in the adhesive layer, 5 parts by weight of vinyl acetate is changed to 4 parts by weight of vinyl acetate and 1 part by weight of acrylic acid, and the acid value of the acrylic copolymer is 10 mgKOH. A semiconductor processing tape was produced under the same conditions as in Experimental Example 2 except that the amount was / g.

  The tapes for semiconductor processing obtained in Experimental Examples 1 and 2 have a good usable period because the acid value of the acrylic copolymer in the pressure-sensitive adhesive layer is 1.0 mgKOH / g or less (2 days It was found that (Experiment 1 was 13 days, Experiment 2 was 7 days).

  The semiconductor processing tapes obtained in Experimental Examples 3 and 4 were found to have a poor usable period (less than 2 days) (both Experimental Examples 3 and 4 were 1 day). This is probably because the acid value of the acrylic copolymer in the pressure-sensitive adhesive layer exceeded 1.0 mgKOH / g.

  DESCRIPTION OF SYMBOLS 1 Semiconductor processing tape, 2 Base material layer, 3 Adhesive layer, 4 Adhesive layer, 5 1st laminated body, 6 2nd laminated body, 10 Wafer, 11 Jig, 13 Blade, 20 Semiconductor chip, 21 Semiconductor chip with semiconductor processing tape, 22 soldered electrode, 30 circuit board, 31 counter electrode

Claims (9)

A base material layer, a pressure-sensitive adhesive layer provided on the base material layer, and an adhesive layer provided on the pressure-sensitive adhesive layer,
The pressure-sensitive adhesive layer contains an acrylic copolymer and a crosslinking agent,
The tape for semiconductor processing whose acid value of the said acrylic copolymer is 1.0 mgKOH / g or less.   2. The semiconductor processing according to claim 1, wherein the acrylic copolymer comprises two or more monomers selected from butyl acrylate, 2-ethylhexyl acrylate, ethyl acrylate, vinyl acetate, and 2-hydroxyethyl (meth) acrylate. tape.   The semiconductor processing tape according to claim 1, wherein the adhesive layer contains at least one of an epoxy resin and an acrylic resin.   The semiconductor processing tape according to claim 1, wherein the acrylic copolymer has an acid value of 0.5 mgKOH / g or more.   The semiconductor processing tape according to claim 1, wherein the crosslinking agent is an isocyanate.   The semiconductor processing tape according to claim 1, wherein the adhesive layer contains a film forming component, an epoxy resin, and a curing agent.   The semiconductor processing tape according to claim 6, wherein the film forming component is an acrylate polymer having an epoxy group.   The semiconductor processing tape according to claim 6, wherein the curing agent contains an acid anhydride. Preparing a first laminate having an adhesive layer on a first substrate layer and a second laminate having an adhesive layer on a second substrate layer;
By laminating the adhesive layer of the first laminate and the adhesive layer of the second laminate, the first laminate was provided on the first substrate layer and the first substrate layer. A step of producing a tape for semiconductor processing comprising an adhesive layer and an adhesive layer provided on the adhesive layer,
The pressure-sensitive adhesive layer contains an acrylic copolymer and a crosslinking agent,
The manufacturing method of the tape for semiconductor processing whose acid value of the said acrylic copolymer is 1.0 mgKOH / g or less.

Images