JP2018195635A - Method for manufacturing optical semiconductor device with phosphor layer - Google Patents

Abstract

The present invention provides a method for producing an optical semiconductor element with a phosphor layer, by which an optical semiconductor element with a phosphor layer can be easily produced. This manufacturing method is a manufacturing method of an optical semiconductor element with a phosphor layer that includes a phosphor layer and an optical semiconductor element in order. This manufacturing method includes a pressure-sensitive adhesive layer 11 configured to reduce the pressure-sensitive adhesive force by irradiation with active energy rays, a phosphor sheet 2 containing a thermosetting resin, and an optical semiconductor element 3 in this order. The first step of preparing the laminate 20, the second step of irradiating the pressure-sensitive adhesive layer 11 with active energy rays and reducing the pressure-sensitive adhesive force of the pressure-sensitive adhesive layer 11 to the phosphor sheet 2, A third step of completely curing the thermosetting resin by heating and a fourth step of peeling the phosphor sheet 2 from the pressure-sensitive adhesive layer 11 are sequentially provided. [Selection] Figure 2

Description

  The present invention relates to a method for manufacturing an optical semiconductor element with a phosphor layer.

  A method of manufacturing an optical semiconductor element with a phosphor layer that includes a phosphor layer and an optical semiconductor element is known.

  For example, a laminate including a pressure-sensitive adhesive sheet, a phosphor layer (sealing layer) containing a phosphor and a thermosetting resin, and an optical semiconductor element in order so that the thermosetting resin is not completely cured. A method has been proposed in which the phosphor layer is heated, and then the active energy ray is irradiated onto the pressure-sensitive adhesive sheet, and then the phosphor layer is heated so that the thermosetting resin is completely cured (for example, (See Patent Document 1).

  Japanese Patent Laid-Open No. 2006-208033

  However, in the method described in Patent Document 1, it is necessary to carry out the heating step twice, which increases the number of steps and complicates the method.

  The present invention provides a method for producing an optical semiconductor element with a phosphor layer, by which an optical semiconductor element with a phosphor layer can be easily produced with fewer steps.

  The present invention (1) is a method for producing a photosemiconductor element with a phosphor layer comprising a phosphor layer and an opto-semiconductor element in order, and is configured so that pressure-sensitive adhesive force is reduced by irradiation with active energy rays. A first step of preparing a laminate comprising in order a pressure-bonding layer, a phosphor layer containing a thermosetting resin, and the optical semiconductor element; irradiating the pressure-sensitive adhesive layer with active energy rays; A second step of reducing the pressure-sensitive adhesive force of the pressure-bonding layer to the phosphor layer, a third step of completely curing the thermosetting resin of the phosphor layer by heating, and the phosphor layer as the pressure-sensitive adhesive layer. The manufacturing method of the optical-semiconductor element with a fluorescent substance layer which comprises the 4th process peeled from in order is included.

  In this method of manufacturing an optical semiconductor device with a phosphor layer, the third step of completely curing the thermosetting resin of the phosphor layer by heating is performed as the heating step, and therefore, the number of man-hours for the optical semiconductor device with a phosphor layer is reduced. And can be easily manufactured.

  ADVANTAGE OF THE INVENTION According to this invention, the optical semiconductor element with a fluorescent substance layer can be manufactured simply with few man-hours.

1A to 1D are manufacturing process diagrams of an embodiment of the present invention, in which FIG. 1A is a step of preparing a pressure-sensitive adhesive support plate, FIG. 1B is a step of arranging a phosphor sheet, and FIG. FIG. 1D shows a second step of irradiating the first pressure-sensitive adhesive layer with an active energy ray. 2E to 2G are manufacturing process diagrams of an embodiment of the present invention following FIG. 1D. FIG. 2E is a third step in which the thermosetting resin of the phosphor sheet is completely cured by heating, and FIG. FIG. 2G shows a fourth step of transferring the phosphor layer and the optical semiconductor element to the transfer sheet. 3H to FIG. 3J are manufacturing process diagrams of an embodiment of the present invention following FIG. 2G. FIG. 3H is a process of embedding an optical semiconductor element with a phosphor layer with a light reflecting sheet, and FIG. The step of removing the part, FIG. 3J shows the step of obtaining the phosphor layer / light reflecting layer coating / optical semiconductor element. FIG. 4 shows a process of mounting the phosphor layer / light reflecting layer coating / optical semiconductor element shown in FIG. 3J on a substrate. 5A to 5C are modifications of the embodiment shown in FIGS. 1A to 3J. FIG. 5A irradiates active energy rays to the first pressure-sensitive adhesive layer of the laminate including one optical semiconductor element. The second step, FIG. 5B, shows a third step in which the thermosetting resin of the phosphor sheet is completely cured by heating, and FIG. 5C shows a fourth step in which the optical semiconductor element with the phosphor layer is transferred to the transfer sheet.

  In FIG. 1A to FIG. 3J, the vertical direction of the paper is the vertical direction (first direction, thickness direction), the upper side of the paper is the upper side (one side in the first direction, the one side in the thickness direction), and the lower side of the paper is the lower side (first Direction other side, thickness direction other side).

  In FIG. 1A to FIG. 3J, the left-right direction and the paper thickness direction are the surface directions (the orthogonal direction orthogonal to the first direction and the direction orthogonal to the thickness direction).

  Specifically, it conforms to the direction arrow in each figure.

  In addition, the above-described directions are intended to limit the orientations at the time of manufacture and use of the optical semiconductor element 21 with a phosphor layer, the phosphor layer / light reflection layer coating / optical semiconductor element 23, and the white light emitting device 8 (described later). Absent.

  The manufacturing method of the manufacturing method of the optical semiconductor element 21 with a fluorescent substance layer which is one Embodiment of this invention is demonstrated.

  As shown in FIG. 2G, this method is a method of manufacturing a photosemiconductor layer-equipped optical semiconductor element 21 including a phosphor layer 27 and an optical semiconductor element 3 in this order.

  The manufacturing method of the optical semiconductor element 21 with a fluorescent substance layer is the pressure sensitive adhesive support board 10 provided with the pressure sensitive adhesive layer 11, the fluorescent substance sheet 2 as an example of the fluorescent substance layer containing a thermosetting resin, A first step (see FIG. 1C) for preparing a laminate 20 including the optical semiconductor element 3 in order, a second step (see FIG. 1D) for irradiating the pressure sensitive adhesive sheet 1 with active energy rays, and heat of the phosphor sheet 2 A third step (see FIG. 2E) for completely curing the curable resin by heating, and a fourth step (see FIG. 2G) for peeling the phosphor sheet 2 containing the cured thermosetting resin from the pressure-sensitive adhesive sheet 1 Is provided. In this manufacturing method, the first to fourth steps are sequentially performed.

  As shown in FIG. 1C, first, in a first step, a laminate 20 including a pressure-sensitive adhesive sheet 1, a phosphor sheet 2, and a plurality of optical semiconductor elements 3 in order is prepared.

  As shown in FIG. 1A, to prepare the laminate 20, first, the pressure-sensitive adhesive support plate 10 is prepared.

  The pressure-sensitive adhesive support plate 10 is a support base that supports the phosphor sheet 2 described below. The pressure-sensitive adhesive support plate 10 has a substantially flat plate shape extending in the surface direction. The pressure-sensitive adhesive support plate 10 includes, for example, a support substrate 9 and a pressure-sensitive adhesive sheet 1 in order toward the upper side.

  The support substrate 9 has flexibility, for example, and has a substantially flat plate shape extending in the surface direction. Examples of the support substrate 9 include polymer films such as polyethylene films and polyester films (such as PET), ceramic sheets such as metal foil, and the like. The thickness of the support substrate 9 is, for example, 100 μm or more, preferably 300 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less.

  The pressure-sensitive adhesive sheet 1 is disposed (supported) on the entire upper surface of the support substrate 9. The pressure-sensitive adhesive sheet 1 has a substantially flat plate shape extending in the surface direction. The pressure-sensitive adhesive sheet 1 is configured such that the pressure-sensitive adhesive force is reduced by irradiation with active energy rays, and specifically includes a pressure-sensitive adhesive whose pressure-sensitive adhesive force is reduced by irradiation with active energy rays.

  Specifically, the pressure-sensitive adhesive sheet 1 includes a pressure-sensitive adhesive layer 11 and a support layer 14 interposed in the middle of the pressure-sensitive adhesive layer 11 in the vertical direction (specifically, the central portion). Of the pressure-sensitive adhesive layer 11, the layer disposed on the support layer 14 is the first pressure-sensitive adhesive layer 12, and the layer disposed below the support layer 14 is the second pressure-sensitive adhesive layer 13. is there. That is, the pressure-sensitive adhesive layer 11 includes a first pressure-sensitive adhesive layer 12 and a second pressure-sensitive adhesive layer 13. Preferably, the pressure-sensitive adhesive layer 11 includes only the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13. Moreover, the pressure sensitive adhesive sheet 1 is equipped with the 2nd pressure sensitive adhesive layer 13, the support layer 14, and the 1st pressure sensitive adhesive layer 12 in order toward the upper side.

  The first pressure-sensitive adhesive layer 12 is configured such that the pressure-sensitive adhesive force is reduced by irradiation with active energy rays. Specifically, the first pressure-sensitive adhesive layer 12 is formed in a sheet shape (layer shape) from a pressure-sensitive adhesive that reduces the pressure-sensitive adhesive force when irradiated with active energy rays.

  Examples of the pressure-sensitive adhesive whose pressure-sensitive adhesive force is reduced by irradiation with active energy rays include a resin composition into which a carbon-carbon double bond is introduced. Examples of the resin composition include a polymer having a carbon-carbon double bond. Examples of such a polymer include polymers described in JP-A-2016-208033.

  The thickness of the first pressure-sensitive adhesive layer 12 is, for example, 5 μm or more, preferably 10 μm or more, and for example, 100 μm or less, preferably 50 μm or less.

  The second pressure-sensitive adhesive layer 13 is disposed on the entire lower surface of the support layer 14. The second pressure-sensitive adhesive layer 13 is formed in a sheet shape (layer shape) from a known pressure-sensitive adhesive. The second pressure-sensitive adhesive layer 13 is preferably configured so that the pressure-sensitive adhesive force is not reduced by irradiation with active energy rays. Specifically, the second pressure-sensitive adhesive layer 13 is made of, for example, a pressure-sensitive adhesive described in JP-A-2015-12084. The thickness of the second pressure-sensitive adhesive layer 13 is, for example, 3 μm or more, preferably 5 μm or more, and for example, 30 μm or less, preferably 20 μm or less.

  The thickness of the pressure-sensitive adhesive layer 11, that is, the total thickness of the first pressure-sensitive adhesive layer 12 and the second pressure-sensitive adhesive layer 13 is, for example, 8 μm or more, preferably 15 μm or more, and for example, 130 μm or less, Preferably, it is 70 μm or less.

Of the pressure-sensitive adhesive layer 11, the peel strength of the next 25 ° C. for phosphor sheet 2 described (below), for example, 0.1 N / cm ² or more, preferably, 0.15 N / cm ² or more, more preferably 0.3 N / cm ² or more, and for example, 10 N / cm ² or less.

  Next, as shown in FIG. 1B, the phosphor sheet 2 is pressure-sensitively bonded to the pressure-sensitive adhesive layer 11 of the pressure-sensitive adhesive support plate 10. Specifically, the phosphor sheet 2 is brought into contact with the upper surface of the first pressure-sensitive adhesive layer 12.

  The phosphor sheet 2 has a substantially flat plate shape extending in the surface direction. The phosphor sheet 2 is a sheet for forming the phosphor layer 27 (see FIG. 2F) by cutting (see the broken line in FIG. 2F). The material of the phosphor sheet 2 is, for example, a composition containing a thermosetting resin and a phosphor.

  Examples of the thermosetting resin include a two-stage reaction curable resin and a one-stage reaction curable resin. The thermosetting resin is in an uncured state and is preferably in a B-stage state.

  Examples of the thermosetting resin include silicone resin, epoxy resin, urethane resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin. As a thermosetting resin, Preferably, a silicone resin and an epoxy resin are mentioned, More preferably, a silicone resin is mentioned.

  Examples of the silicone resin include a phenyl silicone resin containing a phenyl group and a methyl group in the molecule, and a methyl silicone resin containing no methyl group in the molecule and a methyl group in the molecule.

  The thermosetting resins can be used alone or in combination of two or more.

  The ratio with respect to the composition of a thermosetting resin is 20 mass% or more, for example, Preferably, it is 30 mass% or more, for example, is 95 mass% or less, Preferably, it is 90 mass% or less.

  Examples of the phosphor include a yellow phosphor capable of converting blue light into yellow light, and a red phosphor capable of converting blue light into red light. Preferably, a yellow phosphor is used.

Examples of the yellow phosphor include silicate phosphors such as (Ba, Sr, Ca) ₂ SiO ₄ ; Eu, (Sr, Ba) ₂ SiO ₄ : Eu (barium orthosilicate (BOS)), for example, Y ₃ Al Garnet-type phosphors having a garnet-type crystal structure such as ₅ O ₁₂ : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb ₃ Al ₃ O ₁₂ : Ce (TAG (terbium, aluminum, garnet): Ce) Examples thereof include oxynitride phosphors such as Ca-α-SiAlON.

  The phosphor has, for example, a particle shape, and examples of the shape include a spherical shape, a plate shape, and a needle shape. The average particle diameter of the phosphor is, for example, 0.1 μm or more, preferably 1 μm or more, and for example, 200 μm or less, preferably 100 μm or less.

  The ratio with respect to the composition of a fluorescent substance is 5 mass% or more, for example, Preferably, it is 10 mass% or more, for example, is 80 mass% or less, Preferably, it is 70 mass% or less. The ratio of the phosphor to 100 parts by mass of the thermosetting resin is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, for example, 90 parts by mass or less, preferably 80 parts by mass. It is as follows.

  The phosphor sheet 2 has tackiness (pressure-sensitive adhesiveness) if the thermosetting resin is a B stage.

  The thickness of the phosphor sheet 2 is, for example, 100 μm or more, preferably 200 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less.

  The dimension in a plan view of the phosphor sheet 2 is adjusted so as to secure a region where a plurality of optical semiconductor elements 3 to be described later can be arranged. Specifically, the minimum length in the surface direction is, for example, 10 mm or more, Preferably, it is 100 mm or more, More preferably, it is 1000 mm or more, for example, it is 10000 mm or less.

  Although not shown, a release sheet may be provided on the upper surface of the phosphor sheet 2 and the phosphor sheet 2 may be pressure-sensitively bonded to the pressure-sensitive adhesive sheet 1 using the release sheet.

  As a result, the phosphor sheet 2 is pressure-sensitively bonded to the upper surface of the pressure-sensitive adhesive support plate 10.

  Thereafter, as shown in FIG. 1C, a plurality of optical semiconductor elements 3 are disposed on the upper surface of the phosphor sheet 2.

  The optical semiconductor element 3 is, for example, an LED or LD that converts electrical energy into light energy. Preferably, the optical semiconductor element 3 is a blue LED (light emitting diode element) that emits blue light. On the other hand, the optical semiconductor element 3 does not include a rectifier such as a transistor having a technical field different from that of the optical semiconductor element.

  The optical semiconductor element 3 has a substantially flat plate shape along the plane direction. The optical semiconductor element 3 has an electrode surface 15, an opposing surface 16, and a peripheral side surface 17.

  The electrode surface 15 is an upper surface of the optical semiconductor element 3 and is a surface on which a plurality (two) of electrodes 24 are formed.

  The facing surface 16 is a lower surface of the optical semiconductor element 3 and is disposed to face the lower side of the electrode surface 15 with a space therebetween.

  The peripheral side surface 17 connects the peripheral end edge of the electrode surface 15 and the peripheral end edge of the facing surface 16.

  The dimensions of the optical semiconductor element 3 are appropriately set. Specifically, the thickness (height) is, for example, 0.1 μm or more, preferably 0.2 μm or more, and, for example, 500 μm or less, Preferably, it is 200 micrometers or less. Further, the maximum length in the surface direction of the optical semiconductor element 3 is, for example, 0.2 mm or more, preferably 0.5 mm or more, and, for example, 1.5 mm or less, preferably 1.2 mm or less. . The minimum length in the surface direction of the optical semiconductor element 3 is, for example, 0.1 mm or more, preferably 0.2 mm or more, and, for example, 1 mm or less, preferably 0.5 mm or less.

  In order to arrange the plurality of optical semiconductor elements 3 on the upper surface of the phosphor sheet 2, the opposing surfaces 16 of the plurality of optical semiconductor elements 3 are made to be phosphors with the electrode side surfaces 15 of the plurality of optical semiconductor elements 3 facing upward. The top surface of the sheet 2 is contacted (crimped or adhered). If the phosphor sheet 2 has tackiness, the plurality of optical semiconductor elements 3 are temporarily fixed to the phosphor sheet 2.

  Thereby, a laminate 20 including the pressure-sensitive adhesive sheet 1, the phosphor sheet 2, and the plurality of optical semiconductor elements 3 is obtained.

  The thermosetting resin contained in the phosphor sheet 2 in the laminate 20 is not completely cured (preferably in a B-stage state), and the phosphor sheet 2 is still from the pressure-sensitive adhesive sheet 1. The pressure-sensitive adhesive sheet 1 is still peeled (supported) without being peeled off. Therefore, the phosphor sheet 2 and the plurality of optical semiconductor elements 3 in the laminate 20 do not yet constitute a phosphor layer / optical semiconductor element aggregate 21 (see FIG. 2G) described later.

  As shown in FIG. 1D, next, in the second step, the pressure-sensitive adhesive sheet 1 is irradiated with active energy rays.

  In the second step, more specifically, from a radiation source (not shown) provided on the upper side of the pressure-sensitive adhesive sheet 1 (pressure-sensitive adhesive support plate 10) and / or a radiation source 36 provided on the lower side. The pressure-sensitive adhesive sheet 1 (pressure-sensitive adhesive layer 11) is irradiated. Preferably, the pressure-sensitive adhesive sheet 1 (pressure-sensitive adhesive layer 11) is transmitted through the support substrate 9 from the radiation source 36 provided on the lower side of the pressure-sensitive adhesive sheet 1 (pressure-sensitive adhesive support plate 10). Irradiate.

  Examples of active energy rays include ultraviolet rays and electron beams. Preferably, ultraviolet rays are used.

  Examples of the radiation source include irradiation devices such as chemical lamps, excimer lasers, black lights, mercury arcs, carbon arcs, low pressure mercury lamps, medium pressure mercury lamps, high pressure mercury lamps, ultrahigh pressure mercury lamps, and metal halide lamps.

The amount of irradiation is, for example, the conditions under which the carbon-carbon double bond in the pressure-sensitive adhesive layer 11 (preferably, the first pressure-sensitive adhesive layer 31) can substantially react, specifically, the photopolymerization initiator is substantially It is set to the conditions that can react to Specifically, the irradiation amount is, for example, 100 mJ / cm ² or more, preferably 400 mJ / cm ² or more, and, for example, 2000 mJ / cm ² or less, preferably 1000 mJ / cm ² or less.

  By this second step, the pressure-sensitive adhesive force of the upper surface of the pressure-sensitive adhesive sheet 1 (specifically, the first pressure-sensitive adhesive layer 12) to the lower surface of the phosphor sheet 2 is reduced.

  However, the support (temporary fixing) of the pressure-sensitive adhesive sheet 1 to the phosphor sheet 2 is ensured, that is, the phosphor sheet 2 has a relatively small pressure-sensitive adhesive force (fine tack) with respect to the pressure-sensitive adhesive sheet 1. It is supported on the support substrate 9 while being pressure-sensitively bonded (tucked) by force.

Peel strength of 25 ° C. for phosphor sheet 2 of the pressure-sensitive adhesive layer 11 is, for example, less than 0.3 N / cm ^2, preferably less than 0.15 N / cm ^2, more preferably less than 0.1 N / cm ² For example, it is 0.005 N / cm ² or more.

  The ratio of the peel strength after irradiation with active energy rays to the peel strength before irradiation with active energy rays (peel strength after the second step / peel strength before the second step) is, for example, 0.9 or less, Preferably, it is 0.8 or less, more preferably 0.7 or less, and for example, 0.01 or more.

  In addition, the curing reaction of the thermosetting resin of the phosphor sheet 2 does not substantially proceed due to the irradiation of the active energy ray in the second step, and specifically, the curing reaction does not occur.

  Next, as shown in FIG. 2E, in the third step, the thermosetting resin of the phosphor sheet 2 is completely cured by heating. Specifically, the phosphor sheet 2 is heated together with the pressure-sensitive adhesive sheet 1 and the optical semiconductor element 3.

  For example, the laminate 20 is put into a heating device (heating furnace) such as the oven 18.

  The heating condition is a condition in which the thermosetting resin of the phosphor sheet 2 is completely cured (C stage). The heating time is, for example, 100 ° C. or more, preferably 120 ° C. or more, and for example, 150 ° C. or less. The heating time is, for example, 10 minutes or longer, preferably 30 minutes or longer, and for example, 180 minutes or shorter, preferably 120 minutes or shorter.

  By the third step, the thermosetting resin of the phosphor sheet 2 is completely cured (C stage). That is, the phosphor sheet 2 becomes the cured sheet 2A.

  Next, as shown in FIG. 2G, a fourth step of peeling the cured body sheet 2A from the pressure-sensitive adhesive sheet 1 is performed.

  As shown by a broken line in FIG. 2F, in order to perform the fourth step, first, the phosphor sheet 2 is cut. Specifically, the phosphor sheet 2 is divided into a plurality so as to correspond to each of the plurality of optical semiconductor elements 3.

  For cutting the phosphor sheet 2, for example, a cutting device such as a dicing device using a disc-shaped dicing saw (dicing blade) 19, a cutting device using a cutter, or a laser irradiation device is used. Preferably, a dicing apparatus is used.

  By cutting the phosphor sheet 2, the first cut surface 26 is formed in the phosphor sheet 2 over the thickness direction of the phosphor sheet 2. The first cut surface 26 has a substantially grid pattern in plan view. Thereby, a plurality of phosphor layers 27 corresponding to the plurality of optical semiconductor elements 3 are produced.

  Each of the maximum length and the minimum length in the surface direction of the phosphor layer 27 (the phosphor sheet 2 after cutting) is 1 μm with respect to each of the maximum length and the minimum length in the surface direction of the optical semiconductor element 3. As described above, preferably 10 μm or more, and for example, 500 μm or less, preferably 300 μm or less. Specifically, the maximum length in the surface direction of the optical semiconductor element 3 is, for example, 0.5 mm or more, preferably 1 mm or more, and, for example, 2 mm or less, preferably 1.5 mm or less. The minimum length in the surface direction of the optical semiconductor element 3 is, for example, 0.2 mm or more, preferably 0.5 mm or more, and, for example, 1.5 mm or less, preferably 1.2 mm or less.

  As shown in FIG. 2G, the plurality of phosphor layers 27 are then peeled from the pressure-sensitive adhesive sheet 1. Specifically, the lower surfaces of the plurality of phosphor layers 27 are peeled from the upper surface of the first pressure-sensitive adhesive layer 12.

  Specifically, the plurality of phosphor layers 27 and the plurality of optical semiconductor elements 3 are transferred from the pressure-sensitive adhesive sheet 1 to the transfer sheet 4.

  The transfer sheet 4 is a stretched sheet configured to be stretched in the surface direction and having a slight pressure-sensitive adhesive (tack) property. Examples of the transfer sheet 4 include known transfer sheets. As the transfer sheet 4, for example, a commercially available product is used, for example, SPV series (manufactured by Nitto Denko Corporation) or the like.

  As shown in FIG. 2F, in order to transfer the plurality of phosphor layers 27 and the plurality of optical semiconductor elements 3 from the pressure-sensitive adhesive sheet 1 to the transfer sheet 4, first, the transfer sheet 4 is placed on the upper side of the plurality of optical semiconductor elements 3. Opposing to the.

  As shown in FIG. 2G, thereafter, the transfer sheet 4 is pulled down so as to contact the electrode side surfaces 15 of the plurality of optical semiconductor elements 3. At that time, the electrode 24 is embedded in the transfer sheet 4.

  Thereafter, the pressure-sensitive adhesive support plate 10 is peeled from the plurality of phosphor layers 27. Specifically, the pressure-sensitive adhesive sheet 1 is peeled from the lower surfaces of the plurality of phosphor layers 27 together with the support substrate 9.

  As a result, a plurality of optical semiconductor elements 21 with a phosphor layer including one phosphor layer 27 and one optical semiconductor element 3 are obtained while being supported by the transfer sheet 4. Preferably, the optical semiconductor element with a phosphor layer 21 includes only the phosphor layer 27 and the optical semiconductor element 3.

  The optical semiconductor element 21 with a phosphor layer is not a phosphor layer / light reflection layer coating / optical semiconductor element 23 (see FIG. 3J), but a light reflection layer provided in the phosphor layer / light reflection layer coating / optical semiconductor element 23. 28 is not included. That is, the optical semiconductor element 21 with the phosphor layer is a member of the phosphor layer / light reflection layer coating / optical semiconductor element 23, that is, the phosphor layer / light reflection layer coating / optical semiconductor element 23 (and thus the white light emitting device). 8) is a device that can be used industrially and distributed by itself.

  The thickness of the optical semiconductor element 21 with a phosphor layer is, for example, 10 μm or more, preferably 50 μm or more, and for example, 1000 μm or less, preferably 700 μm or less.

  Thereafter, as shown in FIG. 3J, the light reflecting layer 28 can be provided on the optical semiconductor element 21 with the phosphor layer.

  As shown in FIG. 2G, in order to provide the light reflecting layer 28 on the optical semiconductor element 21 with the phosphor layer, first, the light reflecting sheet 5 is prepared.

  The light reflecting sheet 5 is formed in a substantially flat plate (sheet) shape extending in the surface direction. The material of the light reflecting sheet 5 is a material for forming the light reflecting layer 28, and examples thereof include a light reflecting resin composition containing a light reflecting component, particles, and a resin. Specifically, examples of the light reflecting sheet 5 include a light reflecting sheet described in JP-A-2006-174148.

  Next, the light reflecting sheet 5 is disposed on the upper surface of the plurality of optical semiconductor elements 21 with phosphor layers. Specifically, the lower surface of the light reflecting sheet 5 is disposed on the lower surface of each of the plurality of optical semiconductor elements with phosphor layers 21.

  Separately, the transfer sheet 4 is stretched outward in the surface direction. As a result, a gap 31 is formed between the adjacent light reflecting layers 28.

  The length in the surface direction of the gap 31 (distance between adjacent light reflecting layers 28) is, for example, 0.05 mm or less, preferably 0.1 mm or less, and, for example, 1.5 mm or more, preferably 0. .8 mm or more.

  Subsequently, the light reflecting sheet 5 is hot-pressed against the plurality of optical semiconductor elements 21 with a phosphor layer.

  The heat pressing is performed under the condition that the light reflecting sheet 5 is deformed but the light reflecting sheet 5 is not C-staged (completely cured). Specifically, the heat pressing temperature is, for example, 50 ° C. or more, preferably It is 70 ° C. or higher, and for example, 180 ° C. or lower. The heating time is, for example, 3 minutes or more, preferably 5 minutes or more, and for example, 30 minutes or less, preferably 20 minutes or less.

  Then, the light reflection sheet 5 is deformed (melted) by hot pressing to embed each of the plurality of optical semiconductor elements 21 with phosphor layers. Specifically, the light reflecting sheet 5 is filled in the gap 31 between the optical semiconductor elements 21 with the phosphor layer adjacent to each other, and the outer periphery of the optical semiconductor element 21 with the phosphor layer disposed on the outermost side. Cover the sides. The upper end portion of the light reflecting sheet 5 that covers the peripheral side surface of the optical semiconductor element 21 with the phosphor layer is in contact with the lower surface of the transfer sheet 4.

  At the same time, the lower surface of the optical semiconductor element 21 with the phosphor layer is covered with the light reflecting sheet 5, and an adhesion portion 29 is formed.

  The adhering portion 29 is a portion that is essentially unnecessary for the phosphor layer / light reflecting layer coating / optical semiconductor element 23 (see FIG. 3J described later), and is an unavoidable portion caused by pressing the light reflecting sheet 5.

  The light reflecting sheet 5 has a shape having a portion covering the peripheral side surface of the plurality of optical semiconductor elements 21 with a phosphor layer and an attaching portion 29 by pressing. The lower surface of the light reflecting sheet 5 is disposed on the lower side with respect to the lower surface of the optical semiconductor element 21 with a phosphor layer (the lower surface of the phosphor layer 27).

  The thickness of the adhesion part 29 is 50 micrometers or less, for example, Preferably, it is 40 micrometers or less, for example, is 3 micrometers or more, Preferably, it is 5 micrometers or more.

  As shown in FIG. 3I, the attached portion 29 is then removed.

  In order to remove the adhesion portion 29, for example, the third pressure-sensitive adhesive sheet 6 is used.

  The third pressure-sensitive adhesive sheet 6 is prepared from a pressure-sensitive adhesive and has a sheet shape continuous in the surface direction. The magnitude | size of the 3rd pressure sensitive adhesive sheet 6 is set to the magnitude | size which can contain the light reflection sheet 5 in the planar view of the 3rd pressure sensitive adhesive sheet 6, for example. Examples of pressure sensitive adhesives include acrylic pressure sensitive adhesives, rubber pressure sensitive adhesives, silicone pressure sensitive adhesives, urethane pressure sensitive adhesives, polyacrylamide pressure sensitive adhesives, and the like. The peeling strength (180 ° C. peeling adhesive force) at 25 ° C. of the third pressure-sensitive adhesive sheet 6 with respect to the light reflecting sheet 5 is, for example, 2.0 (N / 20 mm) or more, preferably 4.0 (N / 20 mm). For example, it is 100 (N / 20 mm) or less, preferably 20.0 (N / 20 mm) or less.

  In this method, the upper surface (pressure-sensitive adhesive surface) of the third pressure-sensitive adhesive sheet 6 is disposed opposite to the lower surface of the light reflecting sheet 5 including the adhesion portion 29, pressure-sensitively adhered to the adhesion portion 29, and subsequently adhered. The portion 29 is peeled off from the lower surface of the optical semiconductor element 21 with the phosphor layer. Then, the adhesion portion 29 follows the third pressure-sensitive adhesive sheet 6.

  In addition, when peeling of the adhesion part 29 is not completed at once, the above operation is repeated a plurality of times, thereby completing the peeling of the adhesion part 29.

  As shown in FIG. 3I, the lower end portion of the light reflecting sheet 5 that does not overlap the optical semiconductor element 21 with the phosphor layer in plan view is also peeled off together with the adhesion portion 29.

  Thereby, the lower surface of the light reflecting sheet 5 and the lower surface of the optical semiconductor element with a phosphor layer 21 (phosphor layer 27) are continuous in the surface direction. That is, the lower surface of the light reflecting sheet 5 and the lower surface of the optical semiconductor element 21 with the phosphor layer are flush with each other in the surface direction.

  The thickness of the light reflecting sheet 5 (distance between the lower surface of the light reflecting sheet 5 that does not overlap the optical semiconductor element 1 and the lower surface of the transfer sheet 4 in plan view) is the same as the thickness of the optical semiconductor element 21 with the phosphor layer. is there.

  Thereafter, when the resin of the light reflecting sheet 5 is not completely cured, the light reflecting layer 28 is heated to form a C stage (completely cured).

  Thereafter, as shown by the broken line in FIG. 3I, the light reflecting sheet 5 is cut. Specifically, the light reflecting sheet 5 is cut so as to correspond to the plurality of optical semiconductor elements 21 with phosphor layers. In the cutting of the light reflecting sheet 5, the same cutting device as exemplified in the cutting of the phosphor sheet 2 is used.

  By cutting the light reflecting sheet 5, a second cut surface 30 is formed in the light reflecting sheet 5 over the thickness direction of the light reflecting sheet 5. The second cut surface 30 has a substantially grid shape in plan view. As a result, a plurality of light reflecting layers 28 corresponding to the plurality of optical semiconductor elements 21 with phosphor layers are produced.

  Each of the plurality of light reflection layers 28 is in contact with the peripheral side surface 17 of the optical semiconductor element 3 and the peripheral side surface and the top surface of the phosphor layer 27 (parts other than the part where the opposing surface 16 of the optical semiconductor element 3 contacts). .

  As a result, the phosphor layer / light reflecting layer coating / optical semiconductor element 23 including one light reflecting layer 28, one phosphor layer 27, and one optical semiconductor element 3 was supported by the transfer sheet 4. Multiple items can be obtained. Preferably, the phosphor layer / light reflection layer coating / optical semiconductor element 23 includes only the light reflection layer 28, the phosphor layer 27, and the optical semiconductor element 3.

  The phosphor layer / light reflecting layer coating / optical semiconductor element 23 is not the white light emitting device 8 (see FIG. 4), that is, does not include the substrate 7 provided in the white light emitting device 8. In other words, the phosphor layer / light reflection layer coating / optical semiconductor element 23 is one component of the white light emitting device 8, that is, a component for producing the white light emitting device 8, and the component alone is distributed and can be used industrially. Device.

  Thereafter, the phosphor layer / light reflecting layer coating / optical semiconductor element 23 is peeled off from the transfer sheet 4 as indicated by arrows and phantom lines in FIG. 3I.

  As shown in FIG. 3J, a phosphor layer / light reflecting layer coating / optical semiconductor element 23 including the light reflecting layer 28, the phosphor layer 27, and the optical semiconductor element 3 is thereby manufactured.

  As shown in FIG. 4, the phosphor layer / light reflecting layer coating / optical semiconductor element 23 is then provided on the substrate 7 to manufacture the white light emitting device 8.

  The substrate 7 has a substantially flat plate shape extending in the surface direction. The substrate 7 includes terminals 25 corresponding to the electrodes 24 of the phosphor layer / light reflecting layer coating / optical semiconductor element 23 on the upper surface thereof.

  Specifically, the electrode 24 and the terminal 25 are electrically connected. In short, the phosphor layer / light reflecting layer coating / optical semiconductor element 23 is flip-chip mounted on the substrate 7.

  As a result, the white light emitting device 8 including the substrate 7 and the phosphor layer / light reflection layer coating / optical semiconductor element 23 is obtained.

  In this method, as shown in FIG. 2E, the third step of completely curing the thermosetting resin of the phosphor sheet 2 by heating is performed once as the heating step. Can be easily manufactured with less man-hours.

  In the following modifications, members and processes similar to those in the above-described embodiment are denoted by the same reference numerals, and detailed description thereof is omitted. Moreover, each modification can be combined suitably. Furthermore, each modification can produce the same effects as those of the embodiment, unless otherwise specified.

  As shown in FIG. 1B, in the above-described embodiment, the phosphor sheet 2 is brought into direct contact with the pressure-sensitive adhesive sheet 1. However, for example, although not shown, another adhesive layer can be interposed between the phosphor sheet 2 and the pressure-sensitive adhesive sheet 1. In that case, the optical semiconductor element 21 with a phosphor layer includes an adhesive layer (not shown), a phosphor layer 27, and the optical semiconductor element 3. The phosphor layer / light reflection layer coating / optical semiconductor element 23 includes an adhesive layer (not shown), a light reflection layer 28, a phosphor layer 27, and the optical semiconductor element 3.

  Moreover, as shown to FIG. 1C, the laminated body 20 provided with the some optical semiconductor element 3 is prepared at the 1st process of one Embodiment. However, in the first step of this modified example, as shown in FIG. 5A, a stacked body 20 including one optical semiconductor element 3 can be prepared.

  In the first embodiment of this modification, the phosphor layer 27 is pressure-sensitively bonded to the pressure-sensitive adhesive sheet 1, and then one optical semiconductor element 3 is pressure-sensitively bonded to the phosphor layer 27. In this way, a stacked body 20 including one optical semiconductor element 3 is prepared.

  Next, as shown by the arrows in FIG. 5A, in the second step, the active energy ray is irradiated onto the pressure-sensitive adhesive sheet 1. Subsequently, as shown in FIG. 5B, in the third step, the thermosetting resin of the phosphor layer 27 is completely cured by heating.

  Thereafter, as shown in FIG. 5C, the phosphor layer 27 and the optical semiconductor element 3 are transferred to the transfer sheet 4 without cutting the phosphor layer 27. Thereby, the phosphor layer 27 is peeled from the pressure-sensitive adhesive sheet 1.

  Moreover, as shown to FIG. 2G-FIG. 3J, in one Embodiment, the light reflection sheet 5 is pressed with respect to the optical semiconductor element 21 with a fluorescent substance layer. However, although not shown, in this modification, a liquid light-reflecting resin composition can be applied to the optical semiconductor element 21 with a phosphor layer.

  Further, as shown by phantom lines in FIGS. 1A to 2F, a support ring 25 can be provided at the peripheral end portion of the pressure-sensitive adhesive support plate 10 instead of the support substrate 9 and the second pressure-sensitive adhesive layer 13. .

  The support ring 25 is pressure-bonded to the upper surface of the pressure-sensitive adhesive layer 11 (first pressure-sensitive adhesive layer 12). The support ring 25 has a substantially annular shape having a size surrounding the phosphor sheet 2 inside thereof. Examples of the material of the support ring 25 include metals. The support ring 25 supports the support sheet 14 and the first pressure-sensitive adhesive layer 12.

DESCRIPTION OF SYMBOLS 1 Pressure sensitive adhesive sheet 2 Phosphor sheet 3 Optical semiconductor element 11 Pressure sensitive adhesive layer 20 Laminated body 21 Optical semiconductor element 27 with a phosphor layer Phosphor layer

Claims (1)

A method for producing an optical semiconductor element with a phosphor layer, comprising a phosphor layer and an optical semiconductor element in order,
First, a laminate including a pressure-sensitive adhesive layer configured to reduce pressure-sensitive adhesive force by irradiation of active energy rays, a phosphor layer containing a thermosetting resin, and the optical semiconductor element in order is prepared. Process,
A second step of irradiating the pressure-sensitive adhesive layer with active energy rays to reduce the pressure-sensitive adhesive force of the pressure-sensitive adhesive layer to the phosphor layer;
A third step of completely curing the thermosetting resin of the phosphor layer by heating, and
4. A method for producing an optical semiconductor element with a phosphor layer, comprising sequentially a fourth step of peeling the phosphor layer from the pressure-sensitive adhesive layer.

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