JP2018189583A - Pressure sensor device - Google Patents

Abstract

A pressure sensor capable of relaxing a restriction on dimensional freedom exerted on one of a pair of electrodes electrically connected via a pressure-sensitive body, suppressing a voltage drop at the electrode, and detecting pressure with high accuracy. Providing equipment. A pressure sensor device includes a substrate, a plurality of transistors provided in a matrix, a plurality of first electrodes, a second electrode, a first electrode, and a second electrode electrically connected to each of the transistors. A pressure-sensitive body provided on the electrode. The transistor includes a first terminal electrically connected to a first line extending in the first direction, a second terminal adjacent to the first terminal and electrically connected to the first electrode, a first terminal, and a first terminal A semiconductor layer provided between the two terminals, and a gate terminal facing the semiconductor layer via an insulating layer and electrically connected to a second line extending in a second direction intersecting the first direction. . The second electrode includes a plurality of linear portions that pass along the first line between the first electrodes adjacent in the second direction. [Selection] Figure 3

Description

  Embodiments of the present disclosure relate to a pressure sensor device using a pressure sensitive body.

  Conventionally, a pressure sensor device using a pressure sensitive body is known. A pressure-sensitive body is a member configured to change electrical characteristics such as electrical resistance or capacitance according to applied pressure. A pressure sensor device using such a pressure sensitive body can calculate the value and distribution of the pressure applied to the pressure sensitive body based on the electrical resistance of the pressure sensitive body, for example.

  Various pressure sensor devices including the pressure sensitive body as described above have been conventionally proposed. For example, Patent Document 1 discloses a common electrode having a substrate, an organic TFT (Organic Thin Film Transistor) provided in a matrix on the substrate, and a plurality of current-carrying portions provided corresponding to the drain electrodes of the organic TFTs. And a plurality of pressure-sensitive bodies provided between the drain electrode and the current-carrying portion of the common electrode, respectively, is disclosed. In this pressure sensor device, when a pressure is applied to a certain pressure sensitive body, a current flows between the source electrode and the common electrode of the organic TFT via the organic semiconductor, the drain electrode, and the pressure sensitive body. At this time, the value of the pressure can be calculated by changing the value of the current in accordance with the pressure applied to the pressure sensitive body.

Japanese Patent Laying-Open No. 2014-4940

  In the pressure sensor device according to Patent Document 1, the common electrode includes an energization portion provided corresponding to the drain electrode, and a wiring portion that is electrically connected to the energization portion and extends to the outer edge side of the pressure sensor device. . Therefore, the size and shape of the common electrode limit the dimensional freedom of peripheral elements, particularly the drain electrode.

  The embodiment of the present disclosure has been made in consideration of the above points, and the degree of dimensional freedom that one of a pair of electrodes electrically connected via a pressure-sensitive body exerts on the other when detecting pressure. It is an object of the present invention to provide a pressure sensor device that can alleviate the above-described restrictions and can suppress a voltage drop at an electrode and can accurately detect an applied pressure.

  One embodiment of the present disclosure includes a substrate, a plurality of transistors provided in a matrix shape along a first direction and a second direction intersecting the first direction on the substrate, and an array of the plurality of transistors. A plurality of first electrodes provided in a corresponding matrix and electrically connected to each of the transistors, a second electrode provided on the same level as the first electrode, the first electrode, and the second electrode A pressure-sensitive body provided on the electrode, and a pressure applied to the pressure-sensitive body in accordance with a current flowing between the first electrode and the second electrode via the pressure-sensitive body. A first terminal electrically connected to a first line extending in the first direction; and adjacent to the first terminal and electrically connected to the first electrode. A second terminal connected to the first terminal; A semiconductor layer provided between the second terminal and a gate terminal facing the semiconductor layer via an insulating layer and electrically connected to a second line extending in the second direction; The second electrode is a pressure sensor device including a plurality of linear portions passing along the first line between the first electrodes adjacent in the second direction.

  In the pressure sensor device according to an embodiment of the present disclosure, the pressure-sensitive body is provided on the first electrode and the second electrode so as to straddle the plurality of the first electrode and the second electrode. May be.

  In the pressure sensor device according to an embodiment of the present disclosure, a plurality of the pressure sensitive bodies may be provided corresponding to each of the plurality of first electrodes.

  In the pressure sensor device according to the embodiment of the present disclosure, the first line and the second electrode may be provided in different layers.

  In the pressure sensor device according to the embodiment of the present disclosure, the first line, the first electrode, and the second electrode may be provided in the same layer.

  According to the embodiment of the present disclosure, it is possible to relax the restriction of dimensional freedom exerted on one of a pair of electrodes electrically connected via a pressure-sensitive body when detecting pressure, and the voltage drop at the electrode And the applied pressure can be detected with high accuracy.

FIG. 1 is a plan view showing a pressure sensor device according to an embodiment. FIG. 2 is a plan view showing a sensor substrate of the pressure sensor device shown in FIG. FIG. 3 is an enlarged view of FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 5 is a cross-sectional view taken along line VV in FIG. 6 is an enlarged view of FIG. FIG. 7 is an enlarged plan view showing a first electrode and a second electrode of a pressure sensor device according to a modification. FIG. 8 is an enlarged plan view showing a first electrode and a second electrode of a pressure sensor device according to another modification. FIG. 9 is a cross-sectional view of a pressure sensor device according to still another modification.

  Hereinafter, an embodiment of the present disclosure will be described. In the drawings attached to the present specification, for the sake of illustration and ease of understanding, the scale, the vertical / horizontal dimension ratio, and the like are appropriately changed and exaggerated from those of the actual ones. Further, in this specification, terms such as “substrate”, “sheet”, and “film” are not distinguished from each other only based on the difference in names. For example, the “substrate” is a concept including a member that can be called a sheet or a film. Furthermore, as used in this specification, the shape and geometric conditions and the degree thereof are specified, for example, terms such as “orthogonal”, length and angle values, etc. are not limited to strict meaning and are similar. The interpretation should include the extent to which the functions of can be expected.

(Pressure sensor device)
First, the entire pressure sensor device 10 will be described with reference to FIG. The pressure sensor device 10 according to the embodiment shown in FIG. 1 includes a sensor substrate 20 having a pressure sensitive body 40 and a control unit 50 electrically connected to the sensor substrate 20 via a cable 45. The controller 50 is electrically connected to the sensor substrate 20 so as to obtain information on electrical characteristics such as electrical resistance or capacitance of the pressure sensitive body 40. The control unit 50 includes an arithmetic device and a storage medium. The arithmetic device is, for example, a CPU. The storage medium is a memory such as a ROM or a RAM.

  Although the use of the pressure sensor device 10 is not particularly limited, for example, as one of the uses, it is conceivable to use the pressure sensor device 10 by being incorporated in an instrument that receives a load of a human body such as a bed.

(Sensor board)
Next, the sensor substrate 20 will be described with reference to FIGS. FIG. 2 is a plan view showing the sensor substrate 20 with the pressure sensitive body 40 omitted for convenience. 3 is an enlarged view of FIG. 2 and shows a first electrode 24 and a second electrode 25, which will be described later, provided on the sensor substrate 20, and the first electrode 24 and the second electrode 25 are provided for convenience. A dot is attached. 4 is a sectional view taken along line IV-IV in FIG. 3, FIG. 5 is a sectional view taken along line VV in FIG. 3, and FIG. 6 is an enlarged view of FIG.

  As shown in FIGS. 1 to 6, the sensor substrate 20 includes a sheet-shaped substrate 21 and a plurality of sensor substrates 20 provided in a matrix along the substrate 21 along a first direction D1 and a second direction D2 intersecting the first direction. Transistors 30, a plurality of first electrodes 24 provided in a matrix corresponding to the arrangement of the transistors 30 and electrically connected to each of the transistors 30, and a second layer provided on the same level as the first electrodes 24. The electrode 25 includes a sheet-like pressure sensitive body 40 including a first surface 40a facing outward and a second surface 40b facing the substrate 21 side. In this example, the first direction D1 and the second direction D2 indicate the arrangement direction of the transistors, and the first direction D1 and the second direction D2 are orthogonal to each other.

  The substrate 21 is a flexible substrate having flexibility, but the material thereof is not particularly limited, and may be a rigid substrate having no flexibility, for example. In the illustrated example, a planarization layer 22 is laminated on the substrate 21. The planarization layer 22 is a layer containing a curable resin. By providing the planarization layer 22, the surface can be planarized even if the substrate 21 has irregularities. Thereby, defects such as disconnection of the transistor 30 formed on the surface of the planarization layer 22 can be prevented in advance. In this example, as shown in FIGS. 1 and 2, the substrate 21 includes a pair of first sides 22a extending along the first direction D1, and a pair of second sides 22b extending along the second direction D2. , Including a rectangular outer shape.

  As shown in FIG. 6, the transistor 30 includes a first terminal 31 provided on the substrate 21 through the planarization layer 22, and is provided on the substrate 21 through the planarization layer 22 and adjacent to the first terminal 31. A matching second terminal 32, a semiconductor layer 35 provided between the first terminal 31 and the second terminal 32 and in contact with each of the first terminal 31 and the second terminal 32; a semiconductor layer 35; a first terminal 31; And a gate terminal 33 facing the semiconductor layer 35 with a gate insulating layer 34 provided on the planarization layer 22 so as to cover the second terminal 32. One of the first terminal 31 and the second terminal 32 functions as a so-called source terminal and the other functions as a so-called drain terminal depending on the voltage between the first terminal 31 and the second terminal 32. An insulating layer 36 is provided so as to cover the gate terminal 33 and the gate insulating layer 34.

  As materials for forming the first terminal 31, the second terminal 32, the gate terminal 33, the gate insulating layer 34, and the insulating layer 36, known materials used in transistors are used. For example, the materials disclosed in JP 2010-79196 A can be used.

  As a material constituting the semiconductor layer 35, either an inorganic semiconductor material or an organic semiconductor material may be used, but an organic semiconductor material is preferably used. Organic semiconductor materials can generally be formed on a substrate at a lower temperature than inorganic semiconductor materials. Therefore, a material such as plastic having flexibility can be used as a material constituting the substrate 21 that supports the transistor 30. This makes it possible to provide a lightweight transistor sheet that is stable against mechanical shock. In addition, since an organic semiconductor material can be formed on the substrate 21 using a coating process such as a printing method, a larger number of organic transistors are formed on the substrate 21 more efficiently than when an inorganic semiconductor material is used. It becomes possible to do. For this reason, there is a possibility that the manufacturing cost of the transistor sheet can be reduced.

  As the organic semiconductor material, a low molecular organic semiconductor material such as pentacene or a high molecular organic semiconductor material such as polypyrrole can be used. More specifically, a low molecular organic semiconductor material or a high molecular organic semiconductor material disclosed in JP2013-21190A can be used. Here, the “low molecular organic semiconductor material” means, for example, an organic semiconductor material having a molecular weight of less than 10,000. The “polymeric organic semiconductor material” means, for example, an organic semiconductor material having a molecular weight of 10,000 or more.

  4 to 6 show examples in which the transistor 30 is a so-called top gate type. However, the type of the transistor 30 is not limited to the top gate type.

  Next, a wiring electrically connected to the transistor 30 is described. In FIG. 1 and FIG. 2, dotted lines denoted by reference signs Y1 to Yn extend in the first direction D1 and are electrically connected to the first terminals 31 of the plurality of transistors 30 arranged along the first direction D1. The first line is shown. For example, the first line Y1 is positioned on the leftmost side in the drawing of FIGS. 1 and 2 and is electrically connected to the first terminals 31 of the plurality of transistors 30 arranged along the first direction D1. The first lines Y <b> 1 to Yn are provided to transmit changes in the electrical characteristics of the pressure sensitive body 40 to the control unit 50 through the transistors 30. In addition, the first lines Y <b> 1 to Yn in this example are provided on the same level as the first terminal 31. The first lines Y1 to Yn are lines also called signal lines, data lines, bit lines, and the like. In the following description, when the matters common to the first lines Y1 to Yn are described, the first lines Y1 to Yn may be referred to as the first line Y.

  Dotted lines to which reference numerals X1 to Xm are attached represent a second line provided for transmitting a control signal for sequentially turning on each transistor 30. Each of the second lines X1 to Xm extends in the second direction D2 and is electrically connected to the gate terminals 33 of the plurality of transistors 30 arranged along the second direction D2. For example, the second line X1 is positioned on the lowermost side in the drawing of FIGS. 1 and 2 and is electrically connected to the gate terminals 33 of the plurality of transistors 30 arranged along the second direction D2. For this reason, for example, when the transistor 30 is P-type, the voltage is applied to the second line X1 so that the voltage of the gate terminal 33 with respect to the first terminal 31 or the second terminal 32 of the transistor 30 becomes negative. The plurality of transistors 30 connected to the two lines X1 can be turned on simultaneously. Further, the second lines X <b> 1 to Xn in this example are provided on the same level as the gate terminal 33. The second lines X1 to Xm are also called scan lines, scan lines, word lines, and the like. In the following, when the matters common to the second lines X1 to Xn are described, the second lines X1 to Xn may be referred to as the first line X.

  As shown in FIGS. 1 and 2, the first lines Y <b> 1 to Yn and the second lines X <b> 1 to Xm are each connected to a terminal portion 28 provided on the corresponding substrate 21. The above-described cable 45 is also connected to the corresponding terminal portion 28 and electrically connects the terminal portion 28 to the control unit 50. The terminal portions 28 are arranged along the outer edges of the substrate 21 so as to be aligned in the first direction D1 and the second direction D2. In FIG. 1, for convenience of explanation, the cable 45 is connected only to the plurality of terminal portions 28 arranged along the first side 22 a located on the left side in the drawing, but the plurality of terminal portions arranged along the other sides. A similar cable is connected to 28.

  Next, the first electrode 24 and the second electrode 25 provided on the insulating layer 36 will be described. As shown in FIG. 6, first, the first electrode 24 is formed in the through hole 36a formed in a part of the insulating layer 36 and in the through hole 34a formed in a part of the gate insulating layer 34 and communicating with the through hole 36a. Are electrically connected to the second terminal 32 via a connecting portion 37 and a connecting portion 38 having conductivity. 4 to 6, the through hole 36a and the through hole 34a are formed on the second terminal 32, and the second terminal 32 and the first electrode 24 are electrically connected via the through holes 36a and 34a. Connected. As shown in FIG. 3, the first electrode 24 has a quadrangular shape in plan view. Here, as shown in FIG. 2, the first electrodes 24 are electrically connected to the second terminals 32 of the plurality of transistors 30, and thus are provided in a matrix corresponding to the matrix arrangement of the transistors 30. It will be. In this example, an example in which the first electrode 24 and the connecting portion 37 are formed at the same time and integrated is shown.

  Next, as shown in FIGS. 2 and 3, the second electrode 25 in the present embodiment is formed so as to be positioned between the first electrodes 24 adjacent in the second direction D <b> 2. Specifically, the second electrode 25 shown in FIGS. 2 and 3 includes a plurality of first linear portions 25A passing between the first electrodes 24 adjacent in the second direction D2. The second electrode 25 electrically connects the plurality of first linear portions 25A to each other and is electrically connected to a power supply or ground wiring via a wiring (not shown). When the second electrode 25 is electrically connected to a power source, current can be passed from the power source toward the control unit 50 via the pressure sensitive body 40. On the other hand, when the second electrode 25 is electrically connected to the ground wiring, it is possible to pass a current from the control unit 50 toward the ground wiring through the pressure sensitive body 40. In addition, the second electrode 25 in the present embodiment is provided in a layer different from the first line Y and the second line X.

  The material constituting the first electrode 24 and the second electrode 25 may be, for example, a conductive carbon material. As such a conductive carbon material, a material having a graphite structure or a similar structure, such as carbon black, can be used.

  Next, the pressure sensitive body 40 will be described. As shown in FIGS. 1, 4, and 5, the pressure-sensitive body 40 is formed in a sheet shape, and the first electrode 24 and the second electrode 24 extend across the plurality of first electrodes 24 and second electrodes 25. It is provided on the electrode 25. The pressure sensitive body 40 is a member whose electrical resistance or capacitance changes according to the pressure applied to the pressure sensitive body 40. The pressure sensitive body 40 is, for example, a so-called pressure sensitive conductor configured such that the electric resistance changes according to the pressure applied to the pressure sensitive body. The pressure-sensitive conductor includes, for example, rubber such as silicone rubber and a plurality of particles having conductivity such as carbon added to the rubber. When pressure is applied to the pressure sensitive body 40, the pressure sensitive body 40 may be deformed and contact the first electrode 24 and the second electrode 25. When such contact occurs, a current flows between the first electrode 24 and the second electrode 25 via the pressure sensitive body 40. The value of the current flowing in this way changes as the electrical characteristics of the pressure sensitive body 40 change according to the pressure applied to the pressure sensitive body 40. Thereby, the pressure sensor device 10 can measure the value of the pressure applied to the pressure sensitive body 40.

  As shown in FIG. 4, in the present embodiment, a support portion 60 is provided between the sensor substrate 20 and the pressure sensitive body 40. One end of the support portion 60 in the normal direction of the substrate 21 is in contact with the sensor substrate 20, and the other end of the support portion 60 is in contact with the pressure sensitive body 40. The dimension of the support portion 60 in the normal direction of the substrate 21 is determined so that the pressure sensitive body 40 does not contact the first electrode 24 and the second electrode 25 when no pressure is applied to the pressure sensitive body 40. . For this reason, it is possible to suppress a current from flowing between the first electrode 24 and the second electrode 25 when no pressure is applied to the pressure sensitive body 40. The dimension of the support portion 60 in the normal direction of the substrate 21 is determined so that the pressure sensitive body 40 contacts the first electrode 24 and the second electrode 25 when pressure is applied to the pressure sensitive body 40. ing.

  The support part 60 includes, for example, an adhesive. The adhesive may be an inorganic adhesive containing an inorganic material or an organic adhesive containing an organic material. Examples of adhesives include acrylic resin adhesives, urethane resin adhesives, and epoxy resin adhesives.

(Operation of pressure sensor device)
Next, the operation of the pressure sensor device 10 will be described.

  First, the operation of the pressure sensor device 10 when pressure from an external object is not applied to the pressure sensor device 10 will be described. As described above, the pressure sensor device 10 includes the support portion 60 positioned between the pressure-sensitive body 40 and the sensor substrate 20. For this reason, an appropriate gap can be generated between the pressure sensitive body 40 and the first electrode 24 when pressure from an external object is not applied to the pressure sensor device 10. As a result, no or little current flows through the first electrode 24 and the second electrode 25 when pressure from an external object is not applied to the pressure sensor device 10.

  Next, the operation of the pressure sensor device 10 when pressure from an external object is applied to the pressure sensor device 10 will be described. When pressure from an external object is applied to the pressure sensor device 10, the pressure sensitive body 40 is pressed toward the sensor substrate 20 side. Thereby, the pressure sensitive body 40 can contact the first electrode 24 and the second electrode 25. When the pressure sensitive body 40 contacts the first electrode 24 and the second electrode 25, a current flows between the first electrode 24 and the second electrode 25 via the pressure sensitive body 40. At this time, the value of the current changes as the electrical characteristics of the pressure sensitive body 40 change according to the magnitude of the pressure applied to the pressure sensitive body 40. Thereby, the pressure sensor device 10 can measure the value of the pressure applied to the pressure sensitive body 40.

  As described above, when current flows between the first electrode 24 and the second electrode 25 via the pressure sensitive body 40, in the present embodiment, the second electrode 25 is adjacent to the first electrode D in the second direction D2. 24, the current is suppressed from flowing from one of the adjacent first electrodes 24 to the other through the pressure sensitive body 40. That is, since the current that is going to flow from one of the adjacent first electrodes 24 to the other through the pressure sensitive body 40 flows to the second electrode 25 on the way, the current from one first electrode 24 to the other first electrode Current flow to the electrode 24 is suppressed. As a result, it is possible to suppress a decrease in detection sensitivity that may occur due to current flow between the adjacent first electrodes 24.

  In the present embodiment, since the pressure sensitive body 40 is provided on the first electrode 24 and the second electrode 25 so as to straddle the plurality of first electrodes 24 and the second electrode 25, the first electrode 24 and the second electrode 25 are provided. Compared with the case where a pressure-sensitive body is provided between each electrode 25 and the electrode 25, the manufacturing is not troublesome and the structure is simplified. Here, the influence on the detection sensitivity due to the flow of current from one of the adjacent first electrodes 24 to the other is provided such that the pressure sensitive body 40 straddles the plurality of first electrodes 24 and the second electrodes 25. Although this may occur in some cases, in the present embodiment, such a problem is suppressed by the structure in which the second electrode 25 is positioned between the adjacent first electrodes 24. In the present embodiment, since the second electrode 25 includes the first linear portion 25A extending in the first direction D1 in which the first line D extends, the second electrode 25 is a peripheral element, specifically, the first electrode. Since the restriction of the degree of dimensional freedom exerted on 24 is relaxed, the first electrode 24 can be enlarged.

  Further, since the second electrode 25 includes a plurality of first linear portions 25A extending in the first direction D1 in which the first line D extends, the current flowing through the plurality of transistors 30 that are turned on simultaneously is one second. It can prevent flowing into the electrode 25. Thereby, it is possible to suppress the voltage drop from occurring in the second electrode 25.

  Therefore, according to the pressure sensor device 10 according to the present embodiment, the second electrode of the pair of the first electrode 24 and the second electrode 25 that are electrically connected via the pressure-sensitive body 40 when detecting the pressure. The restriction on the degree of dimensional freedom that 25 exerts on the first electrode 24 can be relaxed, the voltage drop in the first electrode 24 and the second electrode 25 can be suppressed, and the applied pressure can be detected with high accuracy.

  Various modifications can be made to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above-described embodiment are used for the parts that can be configured in the same manner as in the above-described embodiment, and are redundant. Description is omitted. Moreover, when it is clear that the operational effects obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

(Modification 1)
First, in the modification shown in FIG. 7, a plurality of pressure sensitive bodies 40 are provided corresponding to each of the plurality of first electrodes 24, and each of the pressure sensitive bodies 40 includes a first electrode 24 and a first electrode adjacent thereto. It is located so as to straddle the first linear portion 25A of the two electrodes 25.

(Modification 2)
Next, in the modification shown in FIG. 8, the first electrode 24, the second electrode 25, and the first line Y are provided in the same layer. The first electrode 24 and the second electrode 25 are located on the same level as the first terminal 31 and the second terminal 32. According to such a modification, since elements having conductivity can be formed together, productivity can be improved.

(Modification 3)
Next, in the modification shown in FIG. 9, the transistor 30 is a bottom gate type. That is, the transistor 30 according to the modification includes a gate terminal 33 provided on the substrate 21 via the planarization layer 22, and a first terminal 31 and a second terminal provided on the gate insulating layer 34 covering the gate terminal 33. 32 and a semiconductor layer 35 provided between the first terminal 31 and the second terminal 32 and facing the gate terminal 33 with the gate insulating layer 34 interposed therebetween. Thus, the type of the transistor 30 is not particularly limited.

DESCRIPTION OF SYMBOLS 10 ... Pressure sensor apparatus 20 ... Sensor board | substrate 21 ... Board | substrate 24 ... 1st electrode 25 ... 2nd electrode 25A ... 1st linear part 31 ... 1st terminal 32 ... 2nd terminal 33 ... Gate terminal 34 ... Gate insulating layer 35 ... Semiconductor layer 36 ... insulating layer 36a ... through hole 40 ... pressure sensitive body D1 ... first direction D2 ... second direction Y1-Ym first line X1-Xm second line

Claims (5)

A substrate,
A plurality of transistors provided in a matrix form on the substrate along a first direction and a second direction intersecting the first direction;
A plurality of first electrodes provided in a matrix corresponding to the arrangement of the plurality of transistors and electrically connected to each of the transistors;
A second electrode provided on the same level as the first electrode;
A pressure-sensitive body provided on the first electrode and the second electrode,
According to the current flowing between the first electrode and the second electrode through the pressure sensitive body, a value of pressure applied to the pressure sensitive body is detected,
The transistor includes a first terminal electrically connected to a first line extending in the first direction, a second terminal adjacent to the first terminal and electrically connected to the first electrode, A semiconductor layer provided between the first terminal and the second terminal; a gate terminal facing the semiconductor layer via an insulating layer and electrically connected to a second line extending in the second direction; Have
The said 2nd electrode is a pressure sensor apparatus which consists of a some linear part which passes along the said 1st line between the said 1st electrodes adjacent in the said 2nd direction.   The pressure sensor device according to claim 1, wherein the pressure sensitive body is provided on the first electrode and the second electrode so as to straddle a plurality of the first electrode and the second electrode.   The pressure sensor device according to claim 1, wherein a plurality of the pressure sensitive bodies are provided corresponding to each of the plurality of first electrodes.   The pressure sensor device according to claim 1, wherein the first line and the second electrode are provided at different levels.   The pressure sensor device according to any one of claims 1 to 3, wherein the first line, the first electrode, and the second electrode are provided in the same layer.

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