JP2018186221A - Substrate processing device - Google Patents

Abstract

An object of the present invention is to provide a substrate processing apparatus capable of obtaining further in-plane uniformity in plasma etching processing of a metal film on a substrate and suppressing adhesion of particles to a substrate to be processed. A substrate processing apparatus (1) for plasma etching a metal film of a substrate (G) with a halogen-containing gas is provided in a processing vessel (2), and has an inner peripheral portion above the periphery of the substrate mounting table (3). Has a guide portion 40-1, which is arranged along the circumferential direction and guides the processing gas introduced from the shower head 10 outward, and has an outer peripheral portion attached to the inner wall of the processing container 2, and has an annular airflow. It has a guide member 40. The airflow guide member 40 has a slit 41 provided in a portion outside the substrate mounting table 3 along the circumferential direction. [Selection diagram] FIG.

Description

  The present invention relates to a substrate processing apparatus that performs plasma processing on a substrate to be processed.

  In the manufacturing process of a flat panel display (FPD) represented by a liquid crystal display (LCD), there is a plasma etching process in which a predetermined film formed on a glass substrate is etched using plasma under vacuum.

  As a substrate processing apparatus for performing a plasma etching process on a target substrate in which a predetermined film is formed on such a glass substrate, a substrate mounting table that functions as a lower electrode in a vacuum holdable chamber, and this A gas-introducing shower head that functions as an upper electrode is placed opposite the mounting table, a high-frequency power source that applies high-frequency power is connected to the lower electrode, the chamber is evacuated, and the chamber is evacuated via a shower head. It is known to introduce a processing gas, apply high-frequency power to a mounting table, and etch a predetermined film existing on a substrate to be processed by plasma of the processing gas formed thereby.

By the way, in such a substrate processing apparatus, for example, a metal film such as an aluminum (Al) film or an Al-containing film such as a Ti / Al / Ti laminated film is used as a processing gas, for example, chlorine (Cl ₂ ) gas. There is a step of etching with a halogen-containing gas. At this time, since the supply amount of the processing gas is proportional to the etching amount, the etching rate of the outer peripheral portion of the substrate is extremely higher than the etching rate of the central portion due to the loading effect. The phenomenon of becoming higher will occur. That is, when viewed from the etching species in the plasma (for example, chlorine radicals), the substrate area to be etched by a unit amount of etching species in the outermost peripheral region of the substrate is about half of the central region, and the flow rate supplied to the central region When the processing gas is supplied to the outermost peripheral region at the same flow rate as in FIG. 2, the etching rate in the outermost peripheral region is approximately twice the etching rate in the central region in calculation.

  Therefore, a rectifying wall is provided so as to surround the periphery of the substrate on the mounting table, thereby supplying the outermost peripheral region of the substrate by blocking the flow of processing gas from the vicinity of the outer peripheral region of the substrate to be processed to the outer periphery of the substrate. Techniques that reduce the amount of etching species to be processed and improve the uniformity of processing within the substrate surface have been proposed (Patent Documents 1 and 2).

  On the other hand, an airflow guide member is provided above the periphery of the mounting table along the circumferential direction of the mounting table and guides the airflow outwardly between the periphery and the loading table by controlling the airflow. A technique for suppressing the effect and increasing the uniformity of processing in the substrate surface has also been proposed (Patent Document 3).

JP 2003-243364 A JP 2000-315676 A JP 2009-212482 A

  However, since the rectifying walls described in Patent Documents 1 and 2 hinder the loading and unloading of the substrate, it is necessary to retreat upward so as not to hinder the loading and unloading of the glass substrate. In this case, deposits and the like attached to the rectifying member may be peeled off and fall as particles onto the substrate to be processed, thereby contaminating the substrate to be processed.

  In addition, the airflow guide member described in Patent Document 3 is likely to be attached with a product of etching and a reaction by-product deposit of etching gas (hereinafter referred to as a deposit) on the airflow guide member. There is a risk of particles adhering. Further, the airflow guide member of Patent Document 3 can reduce the non-uniformity of the processing of the outer peripheral portion due to the loading effect to some extent, but recently, further in-plane uniformity of processing is required.

  Therefore, the present invention provides a substrate processing apparatus capable of obtaining in-plane uniformity of further processing and suppressing particle adhesion to a substrate to be processed when plasma etching a metal film on the substrate. Is an issue.

  In order to solve the above-described problems, the present invention provides a processing container that accommodates a substrate having a metal film formed on a surface thereof, a substrate mounting table that is provided in the processing container and on which the substrate is placed, and the inside of the processing container A processing gas introduction mechanism that is provided above the substrate mounting table so as to face the substrate mounting table and introduces a processing gas containing a halogen-containing gas into the processing container toward the substrate mounting table; An exhaust mechanism that exhausts the inside of the processing container from the periphery of the mounting table, and is provided in the processing container, and is disposed along the circumferential direction of the substrate mounting table above the peripheral edge of the substrate mounting table at an inner peripheral portion. An annular airflow guide member having a guide portion for guiding the processing gas introduced from the processing gas introduction mechanism to the outside, and an outer peripheral portion attached to the inner wall of the processing vessel; For the metal film of the substrate A plasma generation mechanism for generating plasma of a processing gas for performing plasma etching, and the airflow guide member has a slit provided along a circumferential direction in a portion outside the substrate mounting table. A substrate processing apparatus is provided.

  In the present invention, the substrate may have a rectangular shape, the substrate mounting table may have a rectangular shape corresponding to the substrate, and the airflow guide member may have a frame shape.

  The airflow guide member has an inner portion serving as the guide portion and an outer portion outside the substrate mounting table, and the outer member is low between the inner portion and the outer portion. It can be set as the structure in which the level | step difference which becomes a position is formed. The slit may be formed in the outer portion.

  The airflow guide member can be formed by assembling a pair of long side portions corresponding to the long sides of the substrate and a pair of short side portions corresponding to the short sides of the substrate. In this case, each of the long side portion and the short side portion is formed by bending a single plate, a portion corresponding to the inner portion, a portion corresponding to the outer portion, and a portion corresponding to the step. Can be formed. In addition, the long side portion and the short side portion have a trapezoidal shape in which the mating portion is 45 °, a portion corresponding to the inner portion, a portion corresponding to the outer portion, and the step. It can be assembled with the parts corresponding to.

  The slits formed in the long side portion and the slits formed in the short side portion have their end portions reaching the mating portion of the long side portion and the short side portion. It can form in the state which does not.

  The width of the slit controls the exhaust balance between the exhaust through the slit and the exhaust through between the airflow guide member and the substrate mounting table, and suppresses the etching rate at the peripheral portion of the substrate. It is preferable to set a value that can be adjusted so as to optimize the degree of.

  The metal film may be an Al-containing film, and the processing gas may include chlorine gas. In this case, a Ti / Al / Ti laminated film can be used as the Al-containing film.

  According to the present invention, the guide portion that is disposed along the circumferential direction of the substrate mounting table above the peripheral edge of the substrate mounting table and guides the processing gas introduced from the processing gas introduction mechanism to the inner peripheral portion. And an annular airflow guide member having an outer peripheral portion attached to the inner wall of the processing container is provided, and a slit is formed in a portion outside the substrate mounting table of the airflow guide member. In addition to the gas flow exhausted to the outside through the mounting table, a gas flow exhausted from the gas introduction mechanism through the slit can be formed. For this reason, the flow rate of the processing gas between the airflow guide member and the substrate mounting table can be reduced, and etching at the peripheral edge of the substrate can be suppressed to make the in-plane distribution of etching uniform. Further, by providing the slit, the processing gas does not stay on the airflow guide member and is exhausted through the slit. For this reason, the adhesion amount of the deposit to the surface of the airflow guide member and the inner wall of the processing container can be reduced, and the adhesion of particles to the substrate can be suppressed.

1 is a vertical sectional view showing a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a horizontal sectional view taken along line II-II ′ in FIG. 1. It is a fragmentary sectional view which shows the part in which the airflow guide member of the substrate processing apparatus shown in FIG. It is a fragmentary sectional view which shows the delivery state of the board | substrate in the substrate processing apparatus shown in FIG. It is a figure which shows the flow of the process gas in the chamber in the processing apparatus of patent document 3. FIG. It is a figure which shows the flow of the process gas in the chamber in the substrate processing apparatus shown in FIG. When the width of the slit of the airflow guide member is changed between 0 to 40 mm and the Ti / Al / Ti laminated film is etched using Cl ₂ gas as the processing gas, the distance from the substrate edge and the etching amount It is a figure which shows a relationship. FIG. 10 is a diagram showing the deposition amount of deposits after etching when the airflow guide member has “slit” and without “slit” at the point shown in FIG. 9. It is a figure which shows the position which measured the adhesion amount of the deposit of FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

<Substrate processing equipment>
FIG. 1 is a vertical sectional view showing a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a horizontal sectional view taken along line II-II ′ of FIG.
As shown in FIG. 1, this substrate processing apparatus 1 has a predetermined metal film, for example, an Al-containing film such as an Al film or a Ti / Al / Ti laminated film, on a rectangular glass substrate for FPD. It is configured as a capacitively coupled plasma processing apparatus that performs a plasma etching process on a substrate to be processed (hereinafter simply referred to as “substrate”) G on which a film is formed. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like.

  The substrate processing apparatus 1 has a chamber 2 formed into a rectangular tube shape made of aluminum, for example, whose surface is anodized (anodized).

  A substrate mounting table 3 for mounting a substrate G is provided on the bottom of the chamber 2 via a spacer member 4 made of an insulator having a frame shape. The surface (substrate mounting surface) of the substrate mounting table 3 has a rectangular shape slightly larger than the substrate G. The substrate mounting table 3 functions as a lower electrode. The substrate mounting table 3 is made of metal, for example, aluminum, and includes a base material 5 constituting the mounting table main body, an insulating shield ring 6 provided around the upper portion of the base material 5, and a periphery of the side surface of the base material 5. And a plurality of elevating pins 8 for elevating the substrate G. The raising / lowering pin 8 is inserted in the insertion hole 5a provided in the base material 5, and is raised / lowered by the raising / lowering mechanism (not shown). The space between the spacer member 4 and the base material 5 and the space between the spacer member 4 and the bottom wall 2a of the chamber 2 are hermetically sealed, and an air atmosphere space 9 is formed between the base material 5 and the bottom wall 2a. The space 9 is formed and air insulation between the base material 5 and the bottom wall 2a is achieved.

  Feeding lines 23a and 23b are connected to the substrate 5, a matching unit 24a and a high-frequency power source 25a for plasma generation are connected to the feeding line 23a, and a matching unit 24b and a bias generation unit are connected to the feeding line 23b. A high frequency power supply 25b is connected. The frequency of the high frequency power supply 25a for generating plasma is in the range of 1 to 100 MHz, for example, 13.56 MHz. The high-frequency power source 25b for generating the bias is for performing an anisotropic etching by drawing ions into the substrate G on the base material 5, and a frequency in the range of 50 kHz to 10 MHz is used, for example, 3.2 MHz. .

  An electrostatic chuck (not shown) that electrostatically attracts the substrate G is provided on the surface of the base material 5 of the substrate mounting table 3. Further, a temperature control mechanism and a temperature sensor (both not shown) for controlling the temperature of the substrate G are provided in the base material 5. Furthermore, between the base material 5 of the substrate mounting table 3 and the bottom wall 2 a of the chamber 2, in order to prevent the substrate mounting table 3 from being bent due to vacuum exhaust in the chamber 2 while ensuring insulation between them. Are fastened by a plurality of fasteners (not shown). Furthermore, a heat transfer gas supply mechanism (for example, He gas) for supplying a heat transfer gas for heat transfer between the substrate G and the substrate mounting table 3 with the substrate G mounted on the substrate mounting table 3 ( (Not shown) is provided.

  A shower head 10 that supplies a processing gas into the chamber 2 and functions as an upper electrode is provided above the chamber 2 so as to face the substrate mounting table 3. In the shower head 10, a gas diffusion space 11 for diffusing a processing gas is formed therein, and a plurality of discharge holes 12 for discharging the processing gas are formed on a surface facing the substrate mounting table 3.

A gas inlet 14 is provided on the upper surface of the shower head 10, and a processing gas supply pipe 15 is connected to the gas inlet 14. The processing gas supply pipe 15 is connected to a processing gas supply source 18. Yes. Further, an opening / closing valve 16 and a mass flow controller 17 are interposed in the processing gas supply pipe 15. Actually, a plurality of processing gas supply sources 18 are provided according to the number of processing gases, and a processing gas supply pipe 15 extends from each processing gas supply source 18. A processing gas for plasma etching is supplied from the processing gas supply source 18. As the processing gas, a halogen-containing gas such as Cl ₂ gas or a gas obtained by adding an inert gas such as Ar gas to Cl ₂ gas can be used. Boron trichloride (BCl ₃ ) gas, carbon tetrachloride (CCl ₄ ) gas, carbon tetrafluoride (CF ₄ ) gas, and those obtained by adding an inert gas, Cl ₂ gas, BCl ₃ gas, CCl ₄ gas A mixed gas in which two or more CF ₄ gases are mixed, or a mixture of such a mixed gas with an inert gas can also be used.

  Exhaust ports 29 (see FIG. 2) are formed at four corners of the bottom wall of the chamber 2, and exhaust units 30 are provided at the respective exhaust ports 29. The exhaust unit 30 includes an exhaust pipe 31 connected to the exhaust port 29, an automatic pressure control valve (APC) 32 that controls the pressure in the chamber 2 by adjusting the opening degree of the exhaust pipe 31, and the interior of the chamber 2. And a vacuum pump 33 for exhausting through the exhaust pipe 31. Then, the inside of the chamber 2 is evacuated by the vacuum pump 33, and the inside of the chamber 2 is set and maintained in a predetermined vacuum atmosphere by adjusting the opening of the automatic pressure control valve (APC) 32 during the plasma etching process.

  On one side wall of the chamber 2, a loading / unloading port 35 for loading / unloading the substrate G and a gate valve 36 for opening / closing the loading / unloading port 35 are provided.

  An airflow guide member 40 having a guide portion for guiding the gas flow outward is provided at a position above the peripheral edge of the substrate platform 3. The airflow guide member 40 will be described later.

  A baffle plate (not shown) for adjusting the pressure loss of the gas flow path is provided in the space between the substrate platform 3 and the inner wall of the chamber 2 below the airflow guide member 40.

  The substrate processing apparatus 1 further includes a control unit 50. The control unit 50 is configured by a computer including a CPU and a storage unit. Each component of the substrate processing apparatus 1, for example, a gas supply system, an exhaust system, a mechanism for supplying high-frequency power, a drive mechanism for the lifting pins 8, The drive mechanism and the like of the gate valve 36 are controlled so that predetermined processing is performed based on a processing recipe (program) stored in the storage unit. The processing recipe is stored in a storage medium such as a hard disk, a compact disk, or a semiconductor memory.

<Airflow guide member>
Next, the airflow guide member 40 will be described.
FIG. 3 is an enlarged partial cross-sectional view showing a portion provided with the airflow guide member 40 of the substrate processing apparatus 1 according to the present embodiment.

  The airflow guide member 40 is made of a metal such as aluminum or ceramics, and is provided in an annular shape, that is, in a frame shape, between the inner wall position of the chamber 2 and the position above the peripheral edge of the substrate mounting table 3. A function of guiding the air flow of the processing gas to the outside of the substrate G. As shown in FIG. 3, the airflow guide member 40 guides the processing gas introduced from the shower head 10 disposed along the circumferential direction of the substrate mounting table above the periphery of the substrate mounting table 3. The inner portion 40-1 constituting the guide portion and the outer portion 40-2 disposed outside the substrate mounting table 3 and attached to the inner wall of the chamber 2 have the inner portion 40-1 and the outer portion. A step 42 is formed between the inner portion 40-1 and the outer portion 40-2.

  As shown in FIG. 4, the step 42 is formed by inserting the transfer arm 62 of the transfer device 60 into the chamber 2 from the loading / unloading port 35 in a state where the substrate G is raised above the substrate mounting table 3 by the lift pins 8. It is formed to escape from the base 61 of the transfer arm 62 when the substrate G is transferred. However, when there is no need to escape from the base of the transfer device 63, the step 42 need not be provided.

  As shown in FIG. 2, the airflow guide member 40 is formed by assembling two long side members 40a corresponding to the long side of the substrate G (substrate mounting table 3) and two short side members 40b corresponding to the short sides. It is configured. Each of the long side member 40a and the short side member 40b is formed by bending a single plate, thereby forming a portion constituting the inner portion 40-1, a portion constituting the outer portion 40-2, and a step 42 portion. Can be formed. End portions of the long side member 40a and the short side member 40b have a trapezoidal shape cut at 45 °, and a portion constituting the inner portion 40-1 and a portion constituting the outer portion 40-2. And the edge part of the part of level | step difference 42 is assembled in the state which each faced | matched.

  A slit 41 is formed along the circumferential direction on the outer side of the airflow guide member 40 than the substrate mounting table 3. In the case of this example, the slit 41 is formed in the outer side part 40-2. The slit 41 is formed along the length direction of each of the two long side members 40a and along the length direction of each of the two long side slits 41a formed along the length direction of each of the two long side members 40a. A short side slit 41b. The long-side slit 41a and the short-side slit 41b are provided discontinuously in a state in which their end portions do not reach the mating surfaces of the long-side member 40a and the short-side member 40b. And has a length slightly shorter than the short side. Thereby, it is possible to prevent a slit from being present above the exhaust port 29. The slit 41 has a function of controlling the gas flow rate at the peripheral edge of the substrate G and a function of reducing deposition on the airflow guide member 40. In addition, you may form the slit 41 in the inner side part 40-1.

  The height a of the inner portion 40-1 from the upper surface of the substrate mounting table 3 (shield ring 6) and the width b of the slit 41 (long side slit 41a and short side slit 41b) are such that the etching rate of the peripheral portion of the substrate is high. It is set as appropriate so as to be appropriately controlled. The inner end of the inner portion 40-1 is located outside the end portion of the substrate G from the viewpoint of preventing the raising and lowering of the substrate G and preventing particles as much as possible.

  As shown in FIGS. 2 and 3, the long side member 40 a and the short side member 40 b of the airflow guide member 40 are attached to a plurality of (six in the figure) support rods 43 attached to the substrate platform 3. It is supported. The support rod 43 is attached to the inner part 40-1. The other end of the support rod 43 is attached to the chamber 2 or the spacer member 4. By these support rods 43, the height position of the inner portion 40-1 that is the guide portion of the airflow guide member 40 is held constant.

<Processing operation of substrate processing apparatus>
Next, the processing operation of the substrate processing apparatus 1 configured as described above will be described.
First, the gate valve 36 is opened, the substrate G is carried into the chamber 2 through the loading / unloading port 35 by the transfer arm 62 (see FIG. 4) of the transfer device 60 from a vacuum transfer chamber (not shown), and the lift pins 8 are raised. The lift pins 8 are projected from the substrate placement surface of the substrate placement table 3, and the substrate G is placed on the lift pins 8. After the transfer arm 62 is retracted to the vacuum transfer chamber, the elevating pin 8 is lowered, the substrate G is placed on the substrate placement surface of the substrate placement table 3, and the gate valve 36 is closed.

The substrate 5 is temperature-controlled by a temperature control mechanism (not shown) to control the temperature of the substrate G, and the chamber 2 is evacuated by a vacuum pump 33 while an automatic pressure control valve (APC) is used. ) 32 to adjust the pressure in the chamber 2 to a predetermined degree of vacuum, and the flow rate is adjusted from the processing gas supply source 18 by the mass flow controller 17 through the processing gas supply pipe 15 and the shower head 10, for example, Cl A processing gas containing _two gases is introduced into the chamber 2.

In this state, high frequency power for plasma generation is applied to the base material 5 of the substrate platform 3 from the high frequency power source 25a via the matching unit 24a, and the substrate platform 3 as the lower electrode and the shower head 10 as the upper electrode are connected. A high-frequency electric field is generated between them to generate plasma of a processing gas, and an etching process is performed on a metal film such as an Al-containing film of the substrate G by an etchant such as chlorine radical (Cl ^* ) generated by the plasma. As a result, the Al-containing film reacts with Cl ^{* and the} like, and the generated reaction product is removed as a gas. At this time, high frequency power for bias generation is applied to the base material 5 from the high frequency power supply 25b via the matching unit 24b, and ions in the plasma are drawn into the substrate G to increase the anisotropy of etching.

  In the etching process of the metal film with the halogen-containing gas, the airflow guide member 40 is provided to guide the airflow of the processing gas to the outside of the substrate G. Therefore, the etchant diffuses from the inner wall portion of the chamber 2 toward the substrate G. It is possible to suppress etching at the peripheral edge of the substrate G.

  By the way, in patent document 3, the solid board | plate material in which the slit is not formed as an airflow guide member is arrange | positioned in frame shape, but in this case, as shown in FIG. Since the processing gas flows in a narrow space between the peripheral edge portion and the airflow guide member 40 ', the flow rate of the processing gas passing through the peripheral edge portion of the substrate G is increased, thereby promoting the etching of the peripheral edge portion of the substrate G. It has been found that the etching suppression effect at the peripheral edge of the substrate G is not sufficient.

  Therefore, in the present embodiment, by arranging the airflow guide member 40 provided with the slits 41 in the portion outside the substrate mounting table 3, as shown in FIG. Form. As a result, the flow rate of the processing gas between the airflow guide member 40 and the substrate mounting table 3 can be reduced, and etching at the peripheral edge of the substrate G can be suppressed to make the in-plane distribution of etching uniform. .

  At this time, by adjusting the width of the slit 41, the exhaust balance between the exhaust through the slit 41 and the exhaust through the space between the airflow guide member 40 and the substrate mounting table 3 is adjusted. The gas flow rate at the periphery can be controlled, and the exhaust balance is ideal to optimize the degree of etching suppression at the periphery of the substrate G, thereby making the in-plane distribution of etching more uniform. Can do.

  The width b of the slit 41 at this time is determined so as to be an optimum value depending on the etching conditions, the height a of the airflow guide member 40, and the like. The height a of the airflow guide member 40 is appropriately set so that the outward airflow is optimized. For example, in order to reduce the etching amount at the peripheral edge of the substrate G, the height a of the air flow guide member 40 is decreased or the slit b is decreased in order to increase the ratio of the width b of the slit 41 to the height a of the air flow guide member 40. The width b of 41 can be increased. Further, in order to increase the etching amount at the peripheral edge of the substrate G, the height a of the airflow guide member 40 is increased or the slit a is decreased in order to reduce the ratio of the width b of the slit 41 to the height a of the airflow guide member 40. The width b of 41 can be reduced.

FIG. 7 shows a case where the width of the slit 41 of the airflow guide member 40 is changed between 0 to 40 mm and the Ti / Al / Ti laminated film is etched using Cl ₂ gas as a processing gas from the substrate end. It is a figure which shows the relationship between distance and an etching rate. The etching conditions at this time were as follows.

Etching conditions Cl ₂ gas flow rate: 3700 sccm
Pressure: 15mTorr (2Pa)
High frequency power for plasma generation: 12kW
High frequency power for bias generation: 6kW
Time: 60sec

  As shown in FIG. 7, when the slit is not formed, the etching rate at the peripheral portion of the substrate is high due to the loading effect, whereas the etching rate at the peripheral portion of the substrate is lowered by forming the slit. Further, there is an optimum value of the slit width b according to the etching conditions and the height a of the airflow guide member 40. In this example, when the slit width is 5 mm, the peripheral edge of the substrate is appropriately etched. It can be seen that the etching distribution is optimal. On the other hand, it was found that when the slit width was 20 mm or 40 mm, the etching rate at the peripheral edge of the substrate was rather lowered.

  Thus, by optimizing the width b of the slit 41 in accordance with the etching conditions, the height a of the airflow guide member 40, etc., the etching amount at the peripheral edge of the substrate G is reduced and etching with high in-plane uniformity is performed. It was confirmed that

  Further, since the slit 41 is formed in the airflow guide member 40, the processing gas does not stay on the airflow guide member 40 and is exhausted through the slit 41. For this reason, the amount of deposition of deposits on the surface of the airflow guide member 40 and the inner wall of the chamber 2 can be reduced, and the adhesion of particles to the substrate G can be suppressed.

  FIG. 8 shows the airflow guide at the point shown in FIG. 9, that is, the surface of the airflow guide member 40 (point 1 in FIG. 9) and the inner wall of the chamber 2 above the airflow guide member 40 (point 2 in FIG. 9). It is the figure which showed the adhesion amount of the deposit after an etching in the case of "with a slit" of a member, and the case without "slit". Here, using the substrate processing apparatus shown in FIGS. 1 and 2, the slit width was 15 mm, and the deposition amount after 200 sets of two-stage etching processes under the following conditions was measured. Note that the amount of deposit is not to directly measure the amount of deposit on the airflow guide member 40 and the inner wall of the chamber 2, but a small amount of glass substrate is placed at the position, and the amount deposited on the surface of the glass substrate is used as the deposit amount. It was measured. At that time, a step gauge was used to measure the deposit amount.

Etching conditions First stage Cl ₂ gas flow rate: 3700 sccm
Time: 60sec
Second stage Cl ₂ gas flow rate: 1500 sccm
Time: 30sec
Common conditions Pressure: 15mTorr (2Pa)
High frequency power for plasma generation: 12kW
High frequency power for bias generation: 6kW

  As shown in FIG. 8, it was confirmed that the deposit is reduced by providing slits in both points 1 and 2.

  Furthermore, the airflow guide member 40 has an inner portion 40-1 on the substrate mounting table 3 side and an outer portion 40-2 on the inner wall side of the chamber 2, and is located between the inner portion 40-1 and the outer portion 40-2. Is formed with a step 42 where the outer portion 40-2 is lower than the inner portion 40-1. As a result, as shown in FIG. 4, in the state where the substrate G is raised above the substrate mounting table 3 by the lift pins 8, the transfer arm 62 of the transfer device 60 is inserted into the chamber 2 from the loading / unloading port 35. When delivering G, interference with the base 61 of the transfer arm 62 can be prevented. Further, by forming the outer portion 40-2 low in this way, even if deposits adhere to the portion, it can be made difficult to adhere to the substrate G as particles. When the substrate G is delivered, as shown in FIG. 4, since the substrate G is raised to above the airflow guide member 40, no member exists above the substrate G, and particles adhere to the substrate G. Can reduce the risk.

  Furthermore, since the airflow guide member 40 is constructed by assembling the long side member 40a and the short side member 40b, it can be easily mounted even in a large processing apparatus for a large substrate. In addition, the long side member 40a and the short side member 40b are both a part constituting the inner part 40-1, a part constituting the outer part 40-2, and a step part by bending a single plate. The end portions of the long side member 40a and the short side member 40b have a trapezoidal shape cut at 45 °, and the portions constituting these inner portions 40-1; Since the part which comprises the outer part 40-2, and the edge part of the level | step-difference part are assembled in the state which each faced, it can assemble easily even if a level | step difference exists.

  Furthermore, the slit 41 formed on the outer side portion 40-2 of the airflow guide member 40 includes two long side slits 41a formed along the length direction of each of the two long side members 40a, and a short side. Each of the side members 40b has a short side slit 41b formed along the length direction thereof, and the long side slit 41a and the short side slit 41b are not continuous. The side member 40b can be easily combined. Further, by adjusting the lengths of the long side slit 41 a and the short side member 40 b so that no slit exists above the exhaust port 29, the air can be exhausted directly to the exhaust port 29 through the slit 41. It is possible to prevent the particles from being rolled up due to the exhaust flow.

<Other applications>
Although one embodiment of the present invention has been described above, the present invention is not limited to the above embodiment and can be variously modified within the scope of the idea of the present invention. For example, in the above embodiment, the case where the present invention is applied to a capacitively coupled plasma processing apparatus has been described. However, the present invention is not limited to this, and other plasma processing apparatuses such as an inductively coupled plasma processing apparatus and a microwave plasma processing apparatus are used. It can also be applied to.

  Furthermore, although the said embodiment demonstrated the example which used the glass substrate as a board | substrate, other insulating substrates, such as a ceramic substrate, may be sufficient. Further, it may be a semiconductor substrate or the like.

1; Substrate processing apparatus 2; Chamber (processing container)
DESCRIPTION OF SYMBOLS 3; Substrate mounting base 5; Base material 8; Elevating pin 10; Shower head 15: Processing gas supply pipe 18: Processing gas supply source 24a, 24b; Matching device 25a, 25b; Airflow guide member 40-1; Inner part 40-2; Outer part 40a; Long side member 40b; Short side member 41; Slit 41a; Long side slit 41b; Short side slit 42; substrate

Claims (11)

A processing container containing a substrate having a metal film formed on the surface;
A substrate mounting table provided in the processing container and on which a substrate is mounted;
A processing gas introduction mechanism which is provided above the substrate mounting table in the processing container so as to face the substrate mounting table and introduces a processing gas containing a halogen-containing gas into the processing container toward the substrate mounting table; ,
An exhaust mechanism for exhausting the inside of the processing container from the periphery of the substrate mounting table;
The processing gas introduced from the processing gas introduction mechanism, which is provided in the processing container and disposed along the circumferential direction of the substrate mounting table above the periphery of the substrate mounting table, is disposed outwardly on the inner peripheral portion. An airflow guide member having an annular shape, the outer peripheral portion of which is attached to the inner wall of the processing container,
A plasma generation mechanism for generating plasma of a processing gas for performing plasma etching on the metal film of the substrate in the processing container;
The substrate processing apparatus, wherein the air flow guide member has a slit provided along a circumferential direction in a portion outside the substrate mounting table.   The said board | substrate comprises a rectangular shape, the said board | substrate mounting base has comprised the rectangular shape corresponding to the said board | substrate, and the said airflow guide member has comprised frame shape. Substrate processing equipment.   The airflow guide member has an inner portion serving as the guide portion and an outer portion outside the substrate mounting table, and the outer member is located at a low position between the inner portion and the outer portion. The substrate processing apparatus according to claim 2, wherein a level difference is formed.   The substrate processing apparatus according to claim 3, wherein the slit is formed in the outer portion.   The airflow guide member is formed by assembling a pair of long side portions corresponding to the long sides of the substrate and a pair of short side portions corresponding to the short sides of the substrate. The substrate processing apparatus of Claim 3 or Claim 4.   Each of the long side portion and the short side portion is formed by bending a single plate to form a portion corresponding to the inner portion, a portion corresponding to the outer portion, and a portion corresponding to the step. The substrate processing apparatus according to claim 5.   The long side portion and the short side portion have a trapezoidal shape in which the mating portions are 45 °, and correspond to the portions corresponding to the inner portions, the portions corresponding to the outer portions, and the steps. The substrate processing apparatus according to claim 6, wherein the substrate processing apparatus is assembled in a state where the parts to be combined are combined.   The slits formed in the long side portion and the slits formed in the short side portion have their end portions reaching the mating portion of the long side portion and the short side portion. The substrate processing apparatus according to claim 5, wherein the substrate processing apparatus is formed in a state in which the substrate processing is not performed.   The width of the slit controls the exhaust balance between the exhaust through the slit and the exhaust through between the airflow guide member and the substrate mounting table, and suppresses the etching rate at the peripheral portion of the substrate. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus has a value that can be adjusted so as to optimize the degree of.   The substrate processing apparatus according to claim 1, wherein the metal film is an Al-containing film, and the processing gas includes chlorine gas.   The substrate processing apparatus according to claim 10, wherein the Al-containing film is a Ti / Al / Ti laminated film.

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