JP2018181889A - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing device, capable of processing an upper surface of a substrate by a treatment liquid while effectively suppressing the generation of mist and rebound of droplets, by reducing an impact in collision of droplets against an inner wall of a cylindrical part of a cup.SOLUTION: A substrate processing method includes a liquid receiving step of allowing a cup 6 that includes a cylindrical part 6a surrounding a side of a substrate W to receive a treatment liquid discharged to a side along with the rotation of the substrate W, while the treatment liquid is held on the upper surface of the substrate W that is horizontally held by a plurality of chuck pins 9 and the substrate is rotated around a rotation axis A1 and, at the same time, the cup 6 is rotated at a rotational speed ωc satisfying a formula (1): [numerical expression 1] ωc<[r/(r+d)]ωw (1) [in the formula, r represents the radius of the substrate, and d represents a distance in a radial direction between the substrate and the cup.] with respect to the rotational speed ωw of the substrate W.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a substrate processing method and a substrate processing apparatus. Examples of substrates to be processed include semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, photomasks Substrates, ceramic substrates, substrates for solar cells, and the like.

  In substrate processing by a single-wafer substrate processing apparatus that processes substrates one by one, the substrate held horizontally by a spin chuck is rinsed on the upper surface of the substrate while rotating around a vertical rotation axis passing through the central portion of the substrate. After supplying the processing liquid such as liquid, the processing liquid is discharged sideways from the substrate by the centrifugal force accompanying the rotation of the substrate to perform the substrate processing for processing the upper surface of the substrate with the processing liquid.

In the substrate processing method described in Patent Document 1, the processing liquid discharged to the side from the substrate as the substrate rotates is received by a cup including a cylindrical portion surrounding the side of the substrate held by the spin chuck. Are collected.
However, when droplets of the processing liquid discharged laterally from the substrate as the substrate rotates collide with the inner wall of the cylindrical portion of the cup, the droplets break up due to the impact of the collision and generate mist. It is easy for the inner wall to bounce back and head in the direction of the substrate, and when the generated mist or the rebounded droplets reattach to the substrate, it causes the particles of the substrate.

2016-149470 gazette

The cup may be rotated about the vertical axis of rotation through the center of the substrate in the same direction as the substrate.
In this case, in particular, of the flying speed of the droplet at the position where the droplet which has jumped in the tangential direction of the outer peripheral edge from the substrate reaches the inner wall of the cylindrical portion of the cup, It is speculated that by making the velocity component in the tangential direction of the cup match, the impact of droplet collision can be reduced to suppress the occurrence of mist or rebound.

However, the inventor has found that in actual substrate processing, even if the rotational speed of the cup is set as described above, the bounce of the mist or the droplet can not be effectively suppressed.
Therefore, an object of the present invention is to reduce the impact when a droplet collides with the inner wall of the cylindrical portion of the cup, and to process the upper surface of the substrate while effectively suppressing the generation of mist and the rebound of the droplet. A substrate processing method and a substrate processing apparatus that can be processed by a liquid.

  In order to achieve the above object, the invention according to claim 1 is characterized in that a plurality of chuck pins are brought into contact with an outer peripheral portion of a substrate to hold the substrate horizontally, and the plurality of chuck pins Rotating the substrate holding the processing solution on the upper surface about the rotation axis by rotating the substrate around a vertical rotation axis passing through the central portion of the substrate; and the substrate rotation step At the same time, the cup including the cylindrical portion surrounding the side of the substrate is discharged from the substrate sideward with the rotation of the substrate while rotating in the same direction as the substrate around the rotation axis. In parallel with the liquid receiving step of causing the processing liquid to be received by the cup and the liquid receiving step, the rotational speed ωc of the cup is expressed by the equation (1) with respect to the rotational speed ωw of the substrate:

[Equation 1]
ωc <[r / (r + d)] ² · ωw (1)
[Wherein, r represents the radius of the substrate, and d represents the radial distance between the substrate and the cup. ]
And a cup rotation speed control step of controlling in a range satisfying the following conditions.

According to this configuration, it is possible to reduce the impact when the droplet collides with the inner wall of the cylindrical portion of the cup, and to effectively suppress the generation of mist and the rebound of the droplet.
That is, the flying velocity of the droplet jumping out from the outer peripheral edge of the substrate in the tangential direction of the outer peripheral edge coincides with the peripheral velocity r · ωw of the substrate, and the radius of the substrate is r. when the distance in the radial direction is d, among the flying speed of the droplet has reached the inner wall of the cylindrical portion of the cup, the tangential velocity component of the cup (sometimes abbreviated hereinafter as "V _1".) Is expressed by V ₁ = [r ² / (r + d)] · ωw.

Therefore, the peripheral velocity (r + d) · ωc of the cup is made to coincide with the velocity component V ₁ , that is, the equation (1) ′:

[Equation 2]
ωc = [r / (r + d)] ² · ωw (1) ′
When the rotational speed ωc of the cup is set so as to satisfy the following condition, the generation of mist and the rebounding of droplets can be suppressed with respect to the droplets jumping out from the outer peripheral edge of the substrate in the tangential direction of the outer peripheral edge.

However, according to the inventor's study, in the actual substrate processing, the discharge direction of the majority of droplets is more likely to be deflected outward in the radial direction of the substrate than the tangential direction of the outer peripheral edge.
In particular, when a plurality of chuck pins are brought into contact with the outer peripheral portion of the substrate to hold the substrate horizontally, the discharge direction of droplets from the outer peripheral edge of the substrate is outward from the tangential direction, being blocked by the chuck pins. It tends to be biased.

Further, for example, the processing liquid may be sprayed from the side to the upper surface of the substrate, in which case the processing liquid on the outer peripheral portion of the substrate is particularly affected by the blowing force and the centrifugal force accompanying the rotation of the substrate. In addition, when the processing liquid flows on the upper surface of the substrate, the discharge direction of droplets from the outer peripheral edge of the substrate tends to be deviated outward from the tangential direction.
When the discharge direction of the droplets is deflected to the outer side in the radial direction of the substrate from the tangential direction of the outer peripheral edge of the substrate, the droplets ejected by deflection are at a position where they reach the inner wall of the cylindrical portion of the cup of the flying speed of the droplet, the velocity component in the tangential direction of the cup is smaller than the velocity component V _1.

Therefore, in the case where the rotational speed ωc of the cup is a value satisfying the above-mentioned equation (1) ′, the position of the flying speed of the droplet which has jumped out and reached the inner wall of the cylindrical portion of the cup Because the peripheral velocity (r + d) · ωc of the cup is larger than the velocity component in the tangential direction of the cup, the impact of the collision of the droplets is rather large and it is easy to generate mist or rebound.
On the other hand, the peripheral velocity (r + d) · ωc of the cup is made smaller than the velocity component V ₁ , that is, by setting the rotational speed ωc of the cup within the range satisfying the above-mentioned equation (1) Droplet bounce can be effectively suppressed.

  According to the second aspect of the invention, in the cup rotation speed control step, the rotation speed ωc of the cup is set to the equation (2) with respect to the rotation speed ωw of the substrate:

[Equation 3]
ωc = [r / (r + d)] ² · ωw · cosθ (2)
[Wherein, r is the radius of the substrate, d is the radial distance between the substrate and the cup, θ is the discharge angle (90 ° between the discharge direction of the processing solution with respect to the tangential direction of the outer peripheral edge of the substrate >Θ> 0 °). ]
The substrate processing method according to claim 1, wherein:

  The shape and position of the above-mentioned chuck pins are constant for each process on the same apparatus, and the supply direction of the processing liquid, the rotational speed of the substrate that affects the centrifugal force, etc. are all processes on the same apparatus. It is constant. Therefore, any deflection in the discharge direction of droplets from the outer peripheral edge of the substrate due to obstruction by the chuck pins or the flow of the processing liquid is highly directional, and the droplets are at the outer peripheral edge of the substrate. With respect to the tangential direction, for each process, for example, the tangential direction is excluded according to conditions such as the rotational speed of the substrate, that is, θ> 0 ° is satisfied, and the discharged droplets Since the substrate is received, it is mainly deflected and discharged in the direction of a constant discharge angle θ which excludes the rear of the rotational direction of the substrate and the radial direction, that is, 90 °> θ.

The flying speed of droplets discharged with deflection by the discharging angle θ is equal to the flying speed of droplets ejected in the tangential direction from the outer peripheral edge of the substrate, ie, the peripheral velocity r · ωw of the substrate. The tangential velocity component (hereinafter sometimes abbreviated as “V ₂ ”) of the droplet reaching the inner wall (hereinafter sometimes abbreviated as “V ₂ ”) is V ₂ = [r ² / (r + d)] · ω w · cos θ, that is, V ₁ The cos θ of

Therefore, by making the peripheral velocity (r + d) · ωc of the cup coincide with the velocity component V ₂ , that is, by setting the rotational velocity ωc of the cup so as to satisfy the equation (2), mist generation and droplet rebound Can be further effectively suppressed.
The invention according to claim 3 is characterized in that the substrate rotating step includes a brush cleaning step of cleaning the outer peripheral portion by bringing a cleaning brush into contact with the outer peripheral portion of the upper surface of the substrate while rotating the substrate. It is a substrate processing method given in 1 or 2.

When the cleaning brush is brought into contact with the upper surface of the substrate to carry out the brush cleaning step of cleaning the upper surface, the flow of the processing liquid on the upper surface of the substrate is particularly large when cleaning the outer peripheral portion of the upper surface of the substrate. Disturbed by the cleaning brush, the direction of droplet ejection from the outer periphery of the substrate tends to deflect outward more than tangential.
However, the shape of the cleaning brush is constant for each process on the same apparatus, and the driving speed and the driving direction of the cleaning brush in the brush cleaning process are constant for each process on the same apparatus. Therefore, deflection of the discharge direction of the droplets from the outer peripheral edge of the substrate due to being blocked by the cleaning brush is also highly directional, and the droplets are in the brush cleaning process with respect to the tangential direction of the outer peripheral edge of the substrate. And is discharged in the direction of a constant discharge angle θ.

Therefore, even in the case of including the brush cleaning step by the cleaning brush, the generation of the mist and the repelling of the droplet can be more effectively performed by rotating the cup at the rotation speed ωc satisfying the equation (1) or (2). Can be suppressed.
The invention according to claim 4 includes a plurality of pieces of substrate information including the rotational speed ωw of the substrate, and a plurality of discharge angles θ corresponding to the plurality of pieces of substrate information, according to the processing content of the substrate. The method further includes a storage step of storing a discharge angle table, and a discharge angle selection step of selecting the discharge angle θ corresponding to the substrate information from the discharge angle table, and the cup rotational speed control step includes the rotational speed Based on the substrate information including ω w and the discharge angle θ selected in the discharge angle selection step based on the substrate information, the rotational speed ω c of the cup is in a range satisfying the equation (2). It is a process to control, It is a substrate processing method according to claim 2 or 3.

  According to this configuration, for example, the substrate information corresponds to the substrate information such as the change in the rotation speed of the substrate, the presence or absence of the contact of the cleaning brush, or the presence or absence of the supply of the treatment liquid in each substrate processing step. The relationship between the angle of deflection of the droplet in the discharge direction from the outer peripheral edge of the substrate, ie, the discharge angle θ, which is generated by obstruction by the chuck pin or the cleaning brush or the flow of the processing solution, The discharge angle is stored in advance as a discharge angle table, and the discharge angle θ is selected from the discharge angle table, and the rotational speed ωc of the cup is satisfied according to each substrate information, and the equation (2) is satisfied for each process of substrate processing. Can be controlled to the optimum value.

Therefore, the impact when the droplet collides with the inner wall of the cylindrical portion of the cup can be reduced, and the generation of the mist and the rebound of the droplet can be more effectively suppressed.
In order to achieve the above object, the invention according to claim 5 comprises a plurality of chuck pins, wherein the plurality of chuck pins are brought into contact with the outer peripheral portion of the substrate to hold the substrate horizontally. A unit, a substrate rotation unit for rotating the substrate horizontally held by the substrate holding unit around a vertical rotation axis passing through a central portion of the substrate, and a process for supplying a processing liquid to the upper surface of the substrate An annular cup including a liquid supply unit, a cylindrical portion surrounding the substrate, and receiving a processing liquid discharged sideways from the substrate; a cup rotation unit rotating the cup around the rotation axis; A substrate rotation unit, the processing liquid supply unit, and a control device for controlling the cup rotation unit, the control device including the plurality of chuck pins; The substrate holding step of holding the substrate horizontally by bringing the substrate into contact with the outer peripheral portion of the plate, and rotating the plurality of chuck pins around the rotation axis, the substrate holding the treatment liquid on the upper surface A step of rotating the substrate about the rotation axis and a step of rotating the cup in the same direction as the substrate about the rotation axis in parallel with the step of rotating the substrate and the step of rotating the substrate; Parallel to the liquid receiving step of causing the cup to receive the processing liquid discharged to the side from the side, and the rotational speed ωc of the cup relative to the rotational speed ωw of the substrate in parallel with the liquid receiving step. ):

[Equation 4]
ωc <[r / (r + d)] ² · ωw (1)
[Wherein, r represents the radius of the substrate, and d represents the radial distance between the substrate and the cup. ]
And a cup rotation speed control step of controlling in a range satisfying the following conditions.

According to this configuration, it is possible to reduce the impact when the droplet collides with the inner wall of the cylindrical portion of the cup, and to effectively suppress the generation of mist and the rebound of the droplet.
That is, the flying velocity of the droplet jumping out from the outer peripheral edge of the substrate in the tangential direction of the outer peripheral edge coincides with the peripheral velocity r · ωw of the substrate, and the radius of the substrate is r. Among the flight velocity of the droplet that has reached the inner wall of the cylindrical portion of the cup, the velocity component V _{1 in} the tangential direction of the cup is V ₁ = [r ² / (r + d). ] ・ It is represented by ωw.

Therefore, the peripheral velocity (r + d) · ωc of the cup is made to coincide with the velocity component V ₁ , that is, the equation (1) ′:

[Equation 5]
ωc = [r / (r + d)] ² · ωw (1) ′
When the rotational speed ωc of the cup is set so as to satisfy the following condition, the generation of mist and the rebounding of droplets can be suppressed with respect to the droplets jumping out from the outer peripheral edge of the substrate in the tangential direction of the outer peripheral edge.

However, according to the inventor's study, in the actual substrate processing, the discharge direction of the majority of droplets is more likely to be deflected outward in the radial direction of the substrate than the tangential direction of the outer peripheral edge.
In particular, when a plurality of chuck pins are brought into contact with the outer peripheral portion of the substrate to hold the substrate horizontally, the discharge direction of droplets from the outer peripheral edge of the substrate is outward from the tangential direction, being blocked by the chuck pins. It tends to be biased.

Further, for example, the processing liquid may be sprayed from the side to the upper surface of the substrate, in which case the processing liquid on the outer peripheral portion of the substrate is particularly affected by the blowing force and the centrifugal force accompanying the rotation of the substrate. In addition, when the processing liquid flows on the upper surface of the substrate, the discharge direction of droplets from the outer peripheral edge of the substrate tends to be deviated outward from the tangential direction.
When the discharge direction of the droplets is deflected to the outer side in the radial direction of the substrate from the tangential direction of the outer peripheral edge of the substrate, the droplets ejected by deflection are at a position where they reach the inner wall of the cylindrical portion of the cup of the flying speed of the droplet, the velocity component in the tangential direction of the cup is smaller than the velocity component V _1.

Therefore, in the case where the rotational speed ωc of the cup is a value satisfying the above-mentioned equation (1) ′, the position of the flying speed of the droplet which has jumped out and reached the inner wall of the cylindrical portion of the cup Because the peripheral velocity (r + d) · ωc of the cup is larger than the velocity component in the tangential direction of the cup, the impact of the collision of the droplets is rather large and it is easy to generate mist or rebound.
On the other hand, the peripheral velocity (r + d) · ωc of the cup is made smaller than the velocity component V ₁ , that is, by setting the rotational speed ωc of the cup within the range satisfying the above-mentioned equation (1) Droplet bounce can be effectively suppressed.

  In the invention according to claim 6, in the cup rotational speed control step, the control device performs the rotational speed ωc of the cup with respect to the rotational speed ωw of the substrate according to Formula (2):

[Equation 6]
ωc = [r / (r + d)] ² · ωw · cosθ (2)
[Wherein, r is the radius of the substrate, d is the radial distance between the substrate and the cup, θ is the discharge angle (90 ° between the discharge direction of the processing solution with respect to the tangential direction of the outer peripheral edge of the substrate >Θ> 0 °). ]
The substrate processing apparatus according to claim 5, wherein the control is performed in a range satisfying the following condition.

  The shape and position of the above-mentioned chuck pins are constant for each process on the same apparatus, and the supply direction of the processing liquid, the rotational speed of the substrate that affects the centrifugal force, etc. are all processes on the same apparatus. It is constant. Therefore, any deflection in the discharge direction of droplets from the outer peripheral edge of the substrate due to obstruction by the chuck pins or the flow of the processing liquid is highly directional, and the droplets are at the outer peripheral edge of the substrate. With respect to the tangential direction, for each process, for example, the tangential direction is excluded according to conditions such as the rotational speed of the substrate, that is, θ> 0 ° is satisfied, and the discharged droplets Since the substrate is received, it is mainly deflected and discharged in the direction of a constant discharge angle θ which excludes the rear of the rotational direction of the substrate and the radial direction, that is, 90 °> θ.

The flying speed of droplets discharged with deflection by the discharging angle θ is equal to the flying speed of droplets ejected in the tangential direction from the outer peripheral edge of the substrate, ie, the peripheral velocity r · ωw of the substrate. The tangential velocity component V ₂ of the droplet having reached the inner wall is V ₂ = [r ² / (r + d)] · ω w · cos θ, that is, cos θ times V ₁ .
Therefore, by making the peripheral velocity (r + d) · ωc of the cup coincide with the velocity component V ₂ , that is, by setting the rotational velocity ωc of the cup so as to satisfy the equation (2), mist generation and droplet rebound Can be further effectively suppressed.

  The invention according to claim 7 further includes a cleaning brush for contacting the upper surface of the substrate to clean the upper surface, and a cleaning brush drive unit for driving the cleaning brush, and the control device 7. The substrate rotation step according to claim 5, wherein the cleaning brush is brought into contact with the outer peripheral portion of the upper surface of the substrate while rotating the substrate, and the brush cleaning step of cleaning the outer peripheral portion is performed. Substrate processing apparatus.

When the cleaning brush is brought into contact with the upper surface of the substrate to carry out the brush cleaning step of cleaning the upper surface, the flow of the processing liquid on the upper surface of the substrate is particularly large when cleaning the outer peripheral portion of the upper surface of the substrate. Disturbed by the cleaning brush, the direction of droplet ejection from the outer periphery of the substrate tends to deflect outward more than tangential.
However, the shape of the cleaning brush is constant for each process on the same apparatus, and the driving speed and the driving direction of the cleaning brush in the brush cleaning process are constant for each process on the same apparatus. Therefore, deflection of the discharge direction of the droplets from the outer peripheral edge of the substrate due to being blocked by the cleaning brush is also highly directional, and the droplets are in the brush cleaning process with respect to the tangential direction of the outer peripheral edge of the substrate. And is discharged in the direction of a constant discharge angle θ.

Therefore, even in the case of including the brush cleaning step by the cleaning brush, the generation of the mist and the repelling of the droplet can be more effectively performed by rotating the cup at the rotation speed ωc satisfying the equation (1) or (2). Can be suppressed.
In the invention according to claim 8, in the control device, a plurality of pieces of substrate information including the rotational speed ωw of the substrate and a plurality of discharge angles respectively corresponding to the plurality of pieces of substrate information according to the processing content of the substrate a storage device for storing a discharge angle table including θ, and a discharge angle selection unit for selecting the discharge angle θ corresponding to the substrate information from the discharge angle table; Based on the substrate information including the rotational speed ωw and the discharge angle θ selected in the discharge angle selection step based on the substrate information, the rotational speed ωc of the cup satisfies the equation (2). The substrate processing apparatus according to claim 6 or 7, wherein the control is performed within the range described above.

  According to this configuration, for example, the substrate information corresponds to the substrate information such as the change in the rotation speed of the substrate, the presence or absence of the contact of the cleaning brush, or the presence or absence of the supply of the treatment liquid in each substrate processing step. The relationship between the angle of deflection of the droplet in the discharge direction from the outer peripheral edge of the substrate, ie, the discharge angle θ, which is generated by obstruction by the chuck pin or the cleaning brush or the flow of the processing solution, The discharge angle is stored in advance as a discharge angle table, and the discharge angle θ is selected from the discharge angle table, and the rotational speed ωc of the cup is satisfied according to each substrate information, and the equation (2) is satisfied for each process of substrate processing. Can be controlled to the optimum value.

  Therefore, the impact when the droplet collides with the inner wall of the cylindrical portion of the cup can be reduced, and the generation of the mist and the rebound of the droplet can be more effectively suppressed.

It is an illustrative plan view showing a layout of a substrate processing apparatus concerning a 1st embodiment of this invention. It is a schematic diagram which shows schematic structure of the processing unit with which the substrate processing apparatus of FIG. 1 is equipped. It is a schematic plan view for demonstrating movement of a washing | cleaning brush. It is a block diagram explaining the electric constitution of the principal part of the substrate processing apparatus of FIG. It is a figure which shows an example of the content of the discharge | emission angle table memorize | stored in the control apparatus. It is a figure explaining the flight direction of the droplet discharged sideways from the substrate concerned with rotation of a substrate. It is the figure which expanded a part of FIG. 6A. It is a flowchart for demonstrating an example of the substrate processing performed by the processing unit of FIG. It is a schematic sectional drawing for demonstrating the process example of a board | substrate process. It is a schematic diagram which shows schematic structure of the modification of the processing unit with which a substrate processing apparatus is equipped. It is a block diagram explaining the electric constitution of the principal part of the substrate processing apparatus containing the processing unit of FIG.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
FIG. 1 is a schematic plan view showing the layout of a substrate processing apparatus 1 according to a first embodiment of the present invention.
The substrate processing apparatus 1 is a single wafer processing apparatus that processes a substrate W such as a silicon wafer one by one. In this embodiment, the substrate W is a disk-shaped substrate. The substrate processing apparatus 1 includes a plurality of processing units 2 that process a substrate W with a processing liquid, a load port LP on which a carrier C that stores a plurality of substrates W processed by the processing unit 2 is placed, and a load port The transport robots IR and CR that transport the substrate W between the LP and the processing unit 2 and the control device 3 that controls the substrate processing apparatus 1 are included. The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transport robot CR transports the substrate W between the transport robot IR and the processing unit 2. The plurality of processing units 2 have, for example, the same configuration.

FIG. 2 is a schematic view showing a schematic configuration of the processing unit 2 provided in the substrate processing apparatus 1.
The processing unit 2 holds a single substrate W in a horizontal posture, and rotates the spin chuck 4 around a vertical rotation axis A1 passing the center of the substrate W, and the upper surface of the substrate W held by the spin chuck 4 The rinse liquid supply nozzle 5 supplies a rinse liquid containing water as a processing liquid, an annular cup 6 which receives the rinse liquid discharged to the side from the substrate W, and the cup 6 pass through the center of the substrate W And a cup motor 7 for rotating around a vertical axis of rotation A1.

  The spin chuck 4 includes a spin base 8, a plurality of chuck pins 9 for holding the substrate W in a horizontal posture above the spin base 8, and a chuck pin opening / closing mechanism for opening and closing the plurality of chuck pins 9 (reference numeral in FIG. 29), the rotation shaft 10, and the spin motor 11 for rotating the substrate W around the rotation axis A1. The spin chuck 4 including the spin base 8, the chuck pin 9, and the chuck pin opening / closing mechanism 29 is an example of a substrate holding unit that holds the substrate W horizontally. The spin base 8 has a disk shape along the horizontal direction, which has an outer diameter larger than that of the substrate W. A plurality of (three or more, for example, six) chuck pins 9 are disposed on the periphery of the top surface of the spin base 8. The plurality of chuck pins 9 are arranged at equal intervals, for example, at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W at the peripheral edge portion of the upper surface of the spin base 8.

  The rotation axis 10 extends vertically along the rotation axis A1, and in this embodiment is a hollow axis. The upper end of the rotating shaft 10 is coupled to the center of the lower surface of the spin base 8. The spin motor 11 is an electric motor that integrally rotates the spin base 8, the chuck pin 9 and the substrate W coupled to the rotation shaft 10 around the rotation axis A 1 by applying a rotational force to the rotation shaft 10. The rotation shaft 10 and the spin motor 11 are an example of a substrate rotation unit that rotates the substrate W held by the spin base 8 and the chuck pin 9 around the rotation axis A1.

  The rinse liquid supply nozzle 5 is moved, for example, in a horizontal direction (direction perpendicular to the rotation axis A1) by the nozzle moving mechanism 12. The rinse liquid supply nozzle 5 may be moved between a central position facing the rotation center position of the upper surface of the substrate W and a retracted position (home position) not facing the upper surface of the substrate W by moving in the horizontal direction. it can. The rotation center position of the upper surface of the substrate W is a position at which the upper surface of the substrate W intersects with the rotation axis A1. At the central position, the rinse liquid supply nozzle 5 supplies the rinse liquid to the rotation center position of the upper surface of the substrate W as indicated by a two-dot chain line in the drawing. The retracted position not facing the upper surface of the substrate W is the position outside the spin base 8 in a plan view. A rinse liquid supply pipe 13 is connected to the rinse liquid supply nozzle 5. The rinse liquid supply pipe 13 is provided with a rinse liquid valve 14 for opening and closing the flow path.

  The rinse liquid supplied to the rinse liquid supply nozzle 5 is, for example, water. The water is, for example, deionized water (DIW). However, the water is not limited to deionized water, and may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water of a dilution concentration (for example, about 10 ppm to about 100 ppm). The rinse liquid supply nozzle 5 is an example of a treatment liquid supply unit.

  The cup 6 has a cylindrical cylindrical portion 6a surrounding the spin chuck 4, an annular inclined portion 6b extending obliquely upward from the upper end of the cylindrical portion 6a toward the rotation axis A1, and an annularly opened upward. It includes a bottom plate portion 6d having a liquid receiving portion 6c, and a rotary shaft 6e extending downward from the center of the lower surface of the bottom plate portion 6d. The rotation axis 6e extends in the vertical direction along the rotation axis A1, and in this embodiment, has a cylindrical shape surrounding the rotation axis 10 and the spin motor 11. The cylindrical portion 6a and the rotation shaft 6e are arranged concentrically around the rotation axis A1. A drainage port 6f is provided at the lower end portion of the liquid receiving portion 6c.

  A pulley 15 is connected to the rotation shaft 7a of the cup motor 7, and a pulley 16 is connected to the rotation shaft 6e. A belt 17 is stretched between the pulleys 15 and 16. The cup motor 7 is an electric motor that rotates the cup 6 around the rotation axis A1 via the rotary shaft 7a, the pulley 15, the belt 17, the pulley 16 and the rotary shaft 6e by applying rotational force to the rotary shaft 7a. is there. The cup motor 7, the rotation shaft 7a, the pulley 15, the belt 17 and the pulley 16 are an example of a cup rotation unit for rotating the cup 6 around the rotation axis A1.

  The cup 6 is connected to a cup lifting mechanism 18 for moving the cup 6 up and down. In the cup lifting mechanism 18, the upper end of the cylindrical portion 6a is located above the holding position of the substrate W by the spin chuck 4 (the position shown in FIG. 2), and the upper end of the inclined portion 6b is by the spin chuck 4. The cup 6 is vertically moved up and down between a lower position located below the holding position of the substrate W. When the rinse liquid is supplied to the substrate W, the cup 6 is placed at the upper position. The rinse liquid drained laterally from the substrate W is received by the cylindrical portion 6a and collected in the liquid receiving portion 6c, and then drained out of the cup 6 through the drainage port 6f.

The processing unit 2 contacts the upper surface of the substrate W to clean the upper surface, the cleaning brush 19, the cleaning brush drive mechanism 20 for driving the cleaning brush 19, and the substrate W held by the spin chuck 4. And a protective liquid supply unit 21 for supplying a protective liquid to the lower surface of the liquid crystal.
The cleaning brush 19 is, for example, a sponge-like scrub member made of PVA (polyvinyl alcohol), and has a cylindrical shape. The cleaning brush 19 has a flat cleaning surface 19a on its lower surface. The cleaning surface 19 a functions as a contact surface in contact with the upper surface of the substrate W.

  The cleaning brush drive mechanism 20 includes a swing arm 22 which holds the cleaning brush 19 at its tip, and an arm drive mechanism 23 for driving the swing arm 22. The arm drive mechanism 23 is configured to rock the rocking arm 22 around a rocking axis line A2 extending in the vertical direction, and to move the rocking arm 22 up and down. With this configuration, when the substrate W is held by the spin chuck 4 and rotated, the cleaning brush 19 is positioned above the substrate W and a retracted position (home position) set to the side of the spin chuck 4. Can be moved horizontally between

  Furthermore, while pressing the cleaning surface 19a of the cleaning brush 19 against the upper surface of the substrate W and maintaining the state where the cleaning surface 19a is pressed against the upper surface of the substrate W, as shown in FIG. The upper surface of the substrate W is scrubbed by moving (scanning) in the radial direction of the substrate W from the central portion (the position shown by the solid line in FIG. 3) to the outer peripheral portion of the substrate W (the position shown by the two-dot chain line in FIG. It can also be washed. At the time of the scrub cleaning, the rinse liquid is supplied from the rinse liquid supply nozzle 5 so that the foreign matter on the upper surface of the substrate W is easily removed, and the foreign matter scraped off by the cleaning brush 19 is discharged to the outside of the substrate W can do. The cleaning brush drive mechanism 20, the swing arm 22, and the arm drive mechanism 23 are an example of a cleaning brush drive unit.

  The protective liquid supply unit 21 is provided at the upper end portion of the lower surface supply pipe 24 for protective liquid supply and inserted into the hollow rotary shaft 10 and extends vertically, and the lower surface supply pipe 24. And a lower surface nozzle 25 for discharging the protective liquid supplied from the lower surface of the substrate W toward the rotation center position of the lower surface of the substrate W. The rotation center position of the lower surface of the substrate W is a position at which the lower surface of the substrate W intersects with the rotation axis A1.

  A protective liquid pipe 26 is connected to the lower end of the lower surface supply pipe 24. The protective liquid pipe 26 is provided with a protective liquid valve 27 for opening and closing the flow path, and a protective liquid flow rate adjusting valve 28 for adjusting the flow rate of the protective liquid pipe 26 by adjusting the opening degree of the protective liquid pipe 26. The protective liquid supplied to the protective liquid supply unit 21 is, for example, water. The water is, for example, deionized water (DIW). However, the water is not limited to deionized water, and may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water of a dilution concentration (for example, about 10 ppm to about 100 ppm).

FIG. 4 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1.
The substrate processing apparatus 1 includes a control device 3. The control device 3 includes a microcomputer and controls a control target provided in the substrate processing apparatus 1 according to a predetermined control program. More specifically, control device 3 includes a processor (CPU) 3A, and a memory 3C in which a control program and a discharge angle table 3B are stored, and processor 3A executes the control program to perform substrate processing. Are configured to perform various controls. In particular, the controller 3 is programmed to control the nozzle moving mechanism 12, the chuck pin opening / closing mechanism 29, the spin motor 11, the cup motor 7, the cup lifting mechanism 18, the arm drive mechanism 23, and the valves 14, 27, 28. ing.

FIG. 5 is a diagram showing an example of the content of the discharge angle table 3B stored in the control device 3. As shown in FIG. As shown in FIG. 5, the discharge angle table 3B includes a plurality of substrate information and a plurality of discharge angles θ corresponding to one to one, and the substrate information indicates at least the rotational speed ωw of the substrate and the substrate W in each process. It includes the presence or absence of the contact of the cleaning brush to the outer peripheral portion and the presence or absence of the supply of the rinse liquid.
In the example shown in FIG. 5, the substrate information of the cleaning brush contact “No” at the substrate rotation speed ωw ₁ and the supply “with” of the rinse solution correspond to the discharge angle θ ₁ and the cleaning brush at the substrate rotation speed ωw ₂ contact "No", board information of supply of the rinse liquid "there" corresponds the discharge angle theta _2, "YES" contact of the cleaning brush at the same rotational speed Omegadaburyu _2, the board information supply "Yes" in the rinsing liquid Corresponding to the discharge angle θ ₃ , the cleaning brush contact “Yes” at the substrate rotation speed ω w ₃ and the substrate information “supply” of the rinse solution corresponds to the discharge angle θ _4, and the cleaning is performed at the substrate rotation speed ω w ₄ contact brush "none", board information of supply of the rinse liquid "none" corresponds with the discharge angle theta _5.

The discharge angle θ included in the discharge angle table 3B is a value experimentally obtained in advance. That is, when the substrate W was actually rotated at a predetermined rotational speed ωw while combining the substrate information described above, the central value of the discharge angle θ of the droplets discharged laterally from the substrate W was measured. The result is recorded in the discharge angle table 3B.
The control device 3 includes a discharge angle selection unit that executes a discharge angle selection step of selecting a discharge angle θ corresponding to substrate information from the discharge angle table 3B, and the discharge angle θ selected by the discharge angle selection unit Based on the information, a cup rotation speed control step of controlling the rotation speed ωc of the cup 6 to a range satisfying the equation (2) is performed.

  FIG. 6A is a view for explaining the flight direction of droplets discharged laterally from the substrate W with the rotation of the substrate W, and FIG. 6B is an enlarged view of a part of FIG. 6A. Referring to both figures, when the substrate W is rotated at the rotational speed ωw, droplets of the rinse liquid from the substrate W are not tangential to the outer peripheral edge of the substrate W indicated by the broken arrow in the figure, Based on the various factors described in the above, the substrate W is deflected outward in the radial direction of the substrate W, as indicated by the dashed-dotted arrows in the figure, centered on the direction of the constant discharge angle θ from the tangential direction. .

Since the discharge angle θ satisfies θ> 0 ° because the tangential direction is excluded as described above, and the discharged droplet is subjected to the rotational force of the substrate, the rear and the diameter of the substrate in the rotational direction It is considered as a range satisfying 90 °> θ except for the direction.
The flying velocity of the droplet discharged in the tangential direction coincides with the peripheral velocity r · ωw of the substrate W, and the velocity of the droplet having reached the inner wall of the cup 6 among the flying velocity in the tangential direction of the cup 6 The component V ₁ is V ₁ = [r ² / (r + d)] · ωw, where r is the radius of the substrate W and d is the radial distance between the substrate W and the cup 6. Further, the flying velocity of the droplet discharged by being deflected at the discharge angle θ from the tangential direction is equal to the peripheral velocity r · ωw of the substrate W, but the tangent of the droplet of the droplet reaching the inner wall of the cup 6 The velocity component V _{2 in the} direction is V ₂ = [r ² / (r + d)] · ω w · cos θ, that is, cos θ times V ₁ .

Therefore, based on the discharge angle θ included in the discharge angle table 3B, the control device 3 controls the cup motor 7 so that the rotational speed ωc of the cup 6 becomes a range satisfying the equation (2).
FIG. 7 is a flowchart for explaining an example of substrate processing by the processing unit 2. 8A-8C are schematic cross-sectional views for explaining a processing example of substrate processing.
Referring to FIGS. 1, 2, 4 and 7, in the substrate processing by the processing unit 2, first, a substrate loading step of loading the substrate W into the processing unit 2 is executed (step S <b> 1).

  Specifically, the control device 3 controls the nozzle moving mechanism 12 and the arm driving mechanism 23 to retract the rinse solution supply nozzle 5 and the cleaning brush 19 from the upper side of the substrate W to their respective retracted positions. Further, the control device 3 controls the cup raising and lowering mechanism 18 to place the cup 6 at the lower position, and controls the chuck pin opening and closing mechanism 29 to open the chuck pins 9. Place W on the spin chuck 4. Then, the control device 3 retracts the transport robot CR out of the processing unit 2 and controls the chuck pin opening / closing mechanism 29 to close the chuck pins 9 to hold the substrate W in a horizontal posture by the spin chuck 4. .

Next, the control device 3 controls the cup lifting mechanism 18 to place the cup 6 in the upper position, and then drives the cup motor 7 to rotate the cup 6 around the rotation axis A1 (step S2). At the same time, the spin motor 11 is driven to rotate the substrate W around the rotation axis A1 (step S3).
The rotational speed of the substrate W is increased to a predetermined protective film forming speed (for example, 500 rpm in the range of 300 to 1500 rpm) and maintained at the protective film forming speed.

When the rotational speed of the substrate W reaches the protective film forming speed, next, the control device 3 starts supply of the protective liquid to the lower surface of the substrate W (step S4).
Specifically, the control device 3 opens the protective liquid valve 27 and discharges the protective liquid supplied from the protective liquid pipe 26 upward from the lower surface nozzle 25 through the lower surface supply pipe 24. The discharged protective liquid contacts the rotation center position of the lower surface of the substrate W in a rotating state. The discharge flow rate of the protective liquid at this time is set to, for example, about 0.5 (liter / minute) by the protective liquid flow rate adjustment valve 28. The protective liquid supplied to the lower surface of the substrate W receives the centrifugal force due to the rotation of the substrate W, and spreads over the entire lower surface of the substrate W as shown in FIG. 8A, and covers the entire lower surface of the substrate W The liquid film LF1 is formed. For example, when the lower surface side of the substrate W is a device forming surface, the device forming surface is protected by the liquid film LF1. The protective liquid flowing on the lower surface of the substrate W is discharged laterally from the substrate W as the substrate W rotates, and is received by the cup 6.

  The protective liquid is discharged mainly downward from the lower surface of the substrate W to the side of the substrate W, so that the mist generated when the discharged protective liquid droplets collide with the inner wall of the cup 6 or bounced back Droplets are less likely to reattach to the top surface of the substrate W. In addition, even if reattachment occurs, the upper surface of the substrate is cleaned in the subsequent cleaning step, so it is less likely to cause particles. Therefore, the rotational speed of the cup 6 can be arbitrarily set at this time. However, in order to suppress the generation of mist and droplet bounce as much as possible, the rotational speed ωc of the cup 6 is controlled to a range satisfying the above-mentioned equation (1) with respect to the rotational speed ωw of the substrate. preferable.

When a sufficient time for forming the liquid film LF1 of the protective liquid on the lower surface of the substrate W has passed, a pre-rinsing process is then performed (step S5).
That is, the control device 3 controls the spin motor 11 so that the rotational speed of the substrate W becomes a predetermined pre-rinsing speed (for example, 1000 rpm within the range of 800 to 1200 rpm). The control device 3, for example, based on the discharge angle table 3B shown in FIG. 5, the pre-rinse rate _(e.g., ωw _1), the contact of the cleaning brush "none", and the substrate conditions supply "Yes" in the rinsing liquid the resulting emission angle theta _1, on the basis of the discharge angle theta _1, the rotational speed ωc of the cup 6, to a value that satisfies the formula (2), controls the cup motor 7.

  Then, the control device 3 drives the nozzle moving mechanism 12 to open the rinse solution valve 14 in a state where the rinse solution supply nozzle 5 is disposed at the central position opposite to the rotation center position of the upper surface of the substrate W. Thereby, the rinse liquid is supplied from the rinse liquid supply nozzle 5 toward the rotation center position of the upper surface of the substrate W in the rotating state. The supplied rinse liquid receives centrifugal force due to the rotation of the substrate W, and spreads over the entire upper surface of the substrate W as shown in FIG. 8B, and the liquid film LF2 of the rinse liquid covers the entire upper surface of the substrate W. It is formed. The rinse liquid flowing on the upper surface of the substrate W is discharged from the outer peripheral edge of the substrate W toward the side of the substrate W and received by the cup 6 (liquid receiving step).

When the pre-rinsing step is performed for a predetermined time (for example, 5 seconds), a brush cleaning step is then performed (step S6).
That is, the control device 3 controls the spin motor 11 so that the rotational speed of the substrate W becomes a predetermined brush cleaning speed (for example, 1000 rpm within the range of 800 to 1200 rpm). In addition, since the cleaning brush 19 is not in contact with the substrate W at the start of the brush cleaning process, the control device 3 controls the brush cleaning speed (for example, ωw ₂ ) and the cleaning brush based on the discharge angle table 3B shown in FIG. The discharge angle θ ₂ is obtained from the substrate conditions of “without” contact and “supply” of the rinse solution, and based on the discharge angle θ ₂ , the rotational speed ωc of the cup 6 satisfies the formula (2) The cup motor 7 is controlled to be a value.

  Next, the control device 3 controls the arm drive mechanism 23 to move the cleaning brush 19 at the central portion of the upper surface of the substrate W and above the substrate W, as shown by a solid line in FIG. The cleaning brush 19 is moved downward to press the cleaning surface 19 a of the cleaning brush 19 against the central portion of the upper surface of the substrate W. Next, the control device 3 controls the arm drive mechanism 23 to keep the cleaning surface 19a of the cleaning brush 19 pressed against the upper surface of the substrate W, while keeping the cleaning brush 19 from the central portion of the substrate W. After moving (scanning) in the radial direction of the substrate W up to the outer peripheral portion of the substrate W, the cleaning brush 19 is moved upward and is further moved in the radial direction of the substrate W to the position shown by the solid line in FIG. return. The upper surface of the substrate W is scrubbed by repeating this series of operations, for example, multiple times.

Further, in the brush cleaning process, during a period in which the cleaning brush 19 is in contact with at least the outer peripheral portion of the substrate W, the control device 3 performs the brush cleaning speed based on the discharge angle table 3B shown in FIG. _(e.g., ωw _2), "Yes" contact of the cleaning brush, and rinse liquid to obtain a discharge angle theta ₃ from the substrate condition of the supply "Yes" in, on the basis of the discharge angle theta _3, the rotational speed ωc of the cup 6 The cup motor 7 is controlled so as to satisfy the equation (2).

Further, for example, in order to increase the cleaning efficiency, the control device 3 may control the spin motor 11 so as to provide a period during which the brush cleaning speed is reduced to about 200 rpm in the middle of the brush cleaning process. In that case, the control device 3 is based on the discharge angle table 3B shown in FIG. 5 and reduces the brush cleaning speed (for example, ωw ₃ ), the cleaning brush contact “yes”, and the rinse solution supply “yes”. the resulting emission angle theta ₄ from the condition, on the basis of the discharge angle theta _4, the rotational speed ωc of the cup 6, to a value that satisfies the formula (2), controls the cup motor 7.

By performing the brush cleaning process, foreign matter adhering to the upper surface of the substrate is removed, and is discharged together with the rinse liquid from the outer peripheral edge of the substrate W toward the side of the substrate W and received by the cup 6 (The liquid receiving process).
After the brush cleaning process has been performed for a predetermined time (for example, 30 seconds), a post rinse process is then performed (step S7).

That is, the control device 3 controls the arm drive mechanism 23 to retract the cleaning brush 19 to the retraction position set to the side of the spin chuck 4.
Next, the control device 3 controls the spin motor 11 so that the rotational speed of the substrate W becomes a predetermined post rinse speed (for example, 1000 rpm within the range of 800 to 1200 rpm). Further, the control device 3 is based on, for example, the discharge angle table 3B shown in FIG. 5 and the post rinse speed (for example, ωw ₁ again), cleaning brush contact “none”, and rinse solution supply “yes” the resulting emission angle theta ₁ from the condition, on the basis of the discharge angle theta _1, the rotational speed ωc of the cup 6, to a value that satisfies the formula (2), controls the cup motor 7. The rinse liquid flowing on the upper surface of the substrate W is discharged from the outer peripheral edge of the substrate W toward the side of the substrate W and received by the cup 6 (liquid receiving step).

When the post rinse step is performed for a predetermined time (for example, 5 seconds), a spin dry step is then performed (step S8).
That is, the control device 3 closes the rinse liquid valve 14 to stop the supply of the rinse liquid from the rinse liquid supply nozzle 5, and then controls the nozzle moving mechanism 12 to set the rinse liquid supply nozzle 5 to the substrate W. Evacuate to the evacuation position from above. Further, the control device 3 closes the protective liquid valve 27 and stops the supply of the protective liquid from the lower surface nozzle 25.

Next, the control device 3 controls the spin motor 11 so that the rotational speed of the substrate W becomes a predetermined spin dry speed (for example, 3000 rpm within the range of 2600 to 3400 rpm). Further, based on the discharge angle table 3B shown in FIG. 5, for example, the controller 3 sets the above-mentioned spin dry speed (for example, ωw ₄ ), cleaning brush contact “none”, and rinse solution supply “none” substrate conditions the resulting emission angle theta ₅ from the basis of the discharge angle theta _5, the rotational speed ωc of the cup 6, to a value that satisfies the formula (2), controls the cup motor 7.

As a result, a large centrifugal force acts on the rinse liquid adhering to the upper surface of the substrate W and the protective liquid adhering to the lower surface of the substrate W, and the rinse liquid and the protective liquid around the substrate W It is shaken off and received by the cup 6 (reception step). Then, the rinse liquid and the protective liquid are removed from the substrate W, and the substrate W is dried.
After the spin dry process has been performed for a predetermined time (for example, 20 seconds), the control device 3 controls the spin motor 11 to stop the rotation of the substrate W (step S9) and the cup motor 7 To stop the rotation of the cup 6 (step S10).

Thereafter, a substrate unloading step of unloading the substrate W from inside the processing unit 2 is performed (step S11).
That is, the control device 3 controls the cup lifting and lowering mechanism 18 to place the cup 6 at the lower position, and controls the chuck pin opening and closing mechanism 29 to open the chuck pins 9. W is taken out from above the spin chuck 4 and carried out of the processing unit 2. Thus, the substrate processing by the processing unit 2 is completed.

  As described above, the rotational speed ωc of the cup 6 is controlled in the range satisfying the equation (1), particularly the range satisfying the equation (2), with respect to the rotational speed ωw of the substrate which changes in each process of substrate processing. By causing the cup 6 to receive the processing liquid discharged laterally from the substrate W as the substrate W rotates while performing the cup rotation speed control step (liquid receiving step), generation of mist or liquid It is possible to treat the top surface of the substrate with the processing solution while effectively suppressing the drop bounce.

  In the embodiment, the rotation of the cup 6 is controlled to control the rotation speed ωc of the cup 6 in a range satisfying the equation (2) with respect to the rotation speed ωw of the substrate which changes in each process of substrate processing. The cup motor 7 controls the rotation of the substrate W separately. However, for example, in the case of controlling the rotational speed ωc of the cup 6 in a range satisfying the equation (1) with respect to the rotational speed ωw of the substrate which changes in each process of substrate processing, the cup motor 7 is omitted. It is also possible to simplify the structure of the processing unit 2.

  FIG. 9 is a schematic view showing a schematic configuration of a modification of the processing unit provided in the substrate processing apparatus. The processing unit 2 of this modification differs from the processing unit 2 of FIG. 2 only in the configuration in which the cup motor 7 is omitted as described above. Therefore, in FIG. 9, the same components as those shown in FIG. 2 described above are denoted by the same reference numerals as in FIG. 2, and the description thereof will be omitted.

  As shown in FIG. 9, the processing unit 2 is connected to a pulley 30 connected to the rotation shaft 10 of the spin chuck 4, a rotation shaft 31 along a rotation axis A 3 parallel to the rotation axis A 1 and extending in the vertical direction It further includes the pulleys 32, 33, the pulley 34 connected to the rotary shaft 6e of the cup 6, the belt 35 wound around the pulleys 30, 32, and the belt 36 wound around the pulleys 33, 34.

  By applying rotational force to the rotating shaft 10 by the spin motor 11 which is an electric motor, the spin base 8, the chuck pin 9 and the substrate W coupled to the rotating shaft 10 are integrally rotated around the rotation axis A1. At the same time, by applying rotational force to the rotating shaft 10 by the spin motor 11, the rotating shaft 10, the pulley 30, the belt 35, the pulley 32, the rotating shaft 31, the pulley 33, the belt 36, the pulley 34 and the rotating shaft 6e are used. Thus, the cup 6 is rotated about the rotation axis A1.

  The rotation shaft 10 and the spin motor 11 are an example of a substrate rotation unit that rotates the substrate W held by the spin base 8 and the chuck pin 9 around the rotation axis A1. The rotation shaft 10, the pulley 30, the belt 35, the pulley 32, the rotation shaft 31, the pulley 33, the belt 36 and the pulley 34 are an example of a cup rotation unit for rotating the cup 6 around the rotation axis A1.

  When rotational force is applied by the spin motor 11 to the pulleys 30, 32, 33, 34 and the belts 35, 36, the rotational speed ωc of the cup 6 becomes the formula (1) with respect to the rotational speed ωw of the substrate W. :

[Equation 7]
ωc <[r / (r + d)] ² · ωw (1)
[Wherein, r represents the radius of the substrate, and d represents the radial distance between the substrate and the cup. ]
The reduction ratio is set so as to be controlled to a range that satisfies

FIG. 10 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus including the processing unit of FIG.
The substrate processing apparatus 1 includes a control device 3. The control device 3 includes a microcomputer and controls a control target provided in the substrate processing apparatus 1 according to a predetermined control program. More specifically, control device 3 includes a processor (CPU) 3A and a memory 3C in which a control program is stored, and processor 3A executes various control processes for substrate processing by executing the control program. It is configured to run. In particular, the controller 3 is programmed to control the nozzle moving mechanism 12, the chuck pin opening / closing mechanism 29, the spin motor 11, the cup lifting mechanism 18, the arm driving mechanism 23, and the valves 14, 27, 28.

  According to the processing unit 2 of the modification, when the substrate W is rotated at the predetermined rotation speed ωw around the rotation axis A1 by driving the spin motor 11, the cup 6 is rotated at the rotation speed ωw of the substrate W. On the other hand, the motor can be decelerated at a predetermined speed reduction ratio, and can be rotated at a rotational speed .omega.c satisfying the equation (1). Further, even if the rotational speed ωw of the substrate W is changed according to the process, the rotational speed ωc of the cup 6 changes while satisfying the formula (1) while maintaining a predetermined reduction ratio. Therefore, the impact when the droplet collides with the inner wall of the cylindrical portion 6 a of the cup 6 can be reduced, and the generation of mist and the rebound of the droplet can be suppressed.

As mentioned above, although one Embodiment and modification of this invention were described, this invention can also be implemented with another form.
For example, the process of supplying a chemical solution such as hydrofluoric acid to process the upper surface of the substrate may be included prior to the treatment with the rinse solution. In that case, the rotational speed ωw of the substrate suitable for the treatment of the chemical solution and the rotational speed ωc of the cup satisfying the equation (1) or the equation (2) may be set.

In addition, the upper surface side of the substrate may be a device formation surface, and the substrate processing of the present invention may be performed to treat the device formation surface with a treatment liquid. In that case, in order to clean the upper surface of the substrate, a cleaning process may be performed in which a droplet processing solution is sprayed from the spray nozzle onto the upper surface of the substrate, or in some cases brush cleaning may be performed.
Further, in the substrate processing of the present invention, the impact when the droplet of the processing liquid discharged to the side from the substrate W with the rotation of the substrate W collides with the inner wall of the cylindrical portion 6 a of the cup 6 is reduced. In order to suppress the generation of the mist causing the particles of the substrate W and the rebounding of the droplets, the rotational speed ωc of the cup 6 is set to a range satisfying the above-mentioned equation (1) or (2).

  However, after completion of the substrate processing, for example, the spin chuck 4 holds and rotates the dummy substrate, and while the rinse liquid is supplied to the upper surface of the substrate, the cup 6 is rotated faster than the rotation speed of the substrate. The liquid droplets discharged laterally from the substrate W collide with the inner wall of the cylindrical portion of the cup 6 by stopping the cup 6 or rotating the cup 6 in the opposite direction to the substrate W. It is also possible to remove dirt and the like attached to the inner wall of the cup 6 by, for example, enhancing the impact during the process.

  Besides, various design changes can be made within the scope of the matters described in the claims.

1 substrate processing apparatus 2 processing unit 3 control apparatus 3B discharge angle table 4 spin chuck (substrate holding unit)
5 Rinsing solution supply nozzle (processing solution supply unit)
6 cup 7 cup motor (cup rotation unit)
7a Rotary shaft (cup rotation unit)
8 Spin base (substrate holding unit)
9 Chuck pin (substrate holding unit)
10 rotation axis (substrate rotation unit)
11 Spin motor (substrate rotation unit)
15, 16, 30, 32, 33, 34 pulleys (cup rotation unit)
17, 35, 36 belts (cup rotation unit)
19 cleaning brush 20 cleaning brush drive mechanism (cleaning brush drive unit)
21 Protective liquid supply unit 22 Swing arm (Washing brush drive unit)
23 arm drive mechanism (washing brush drive unit)
29 Chuck pin opening / closing mechanism (substrate holding unit)
31 Rotary shaft (cup rotation unit)
A1 rotation axis W substrate θ discharge angle ωc cup rotation speed ω w substrate rotation speed r substrate radius d distance between substrate and cup in radial direction

Claims (8)

A substrate holding step of holding the substrate horizontally by bringing a plurality of chuck pins into contact with the outer peripheral portion of the substrate;
And rotating the plurality of chuck pins around a vertical rotation axis passing through a central portion of the substrate to rotate the substrate holding the processing liquid on the upper surface around the rotation axis.
Parallel to the substrate rotation step, the cup including the cylindrical portion surrounding the side of the substrate is rotated in the same direction as the substrate around the rotation axis, and the substrate is rotated from the substrate side. Receiving the treatment liquid to be discharged to the cup in the cup;
In parallel with the liquid receiving step, the rotational speed ωc of the cup is expressed by equation (1) with respect to the rotational speed ωw of the substrate:
[Equation 1]
ωc <[r / (r + d)] ² · ωw (1)
[Wherein, r represents the radius of the substrate, and d represents the radial distance between the substrate and the cup. ]
A cup rotational speed control step of controlling in a range satisfying
A substrate processing method including: In the cup rotation speed control step, the rotation speed ωc of the cup is expressed by equation (2) with respect to the rotation speed ωw of the substrate:
[Equation 2]
ωc = [r / (r + d)] ² · ωw · cosθ (2)
[Wherein, r is the radius of the substrate, d is the radial distance between the substrate and the cup, θ is the discharge angle (90 ° between the discharge direction of the processing solution with respect to the tangential direction of the outer peripheral edge of the substrate >Θ> 0 °). ]
The substrate processing method according to claim 1, wherein the control is performed in a range satisfying the following conditions.   The substrate processing method according to claim 1 or 2, wherein the substrate rotating step includes a brush cleaning step of cleaning the outer peripheral portion by bringing the cleaning brush into contact with the outer peripheral portion of the upper surface of the substrate while rotating the substrate. . Storing a discharge angle table including a plurality of pieces of substrate information including the rotational speed ωw of the substrate and a plurality of discharge angles θ respectively corresponding to the plurality of pieces of substrate information according to the processing content of the substrate; ,
A discharge angle selection step of selecting the discharge angle θ corresponding to the substrate information from the discharge angle table;
The cup rotation speed control step further includes the step of controlling the cup rotation speed based on the substrate information including the rotation speed ωw and the discharge angle θ selected in the discharge angle selection step based on the substrate information. The substrate processing method according to claim 2, wherein the rotational speed ωc is controlled to a range satisfying the equation (2). A substrate holding unit that includes a plurality of chuck pins and holds the substrate horizontally by bringing the plurality of chuck pins into contact with the outer peripheral portion of the substrate;
A substrate rotation unit configured to rotate the substrate horizontally held by the substrate holding unit around a vertical rotation axis passing through a central portion of the substrate;
A processing liquid supply unit for supplying a processing liquid to the upper surface of the substrate;
An annular cup including a tubular portion surrounding the substrate and receiving a processing solution discharged laterally from the substrate;
A cup rotation unit for rotating the cup around the rotation axis;
The substrate rotation unit, the processing liquid supply unit, and a control device that controls the cup rotation unit;
The control device brings the plurality of chuck pins into contact with the outer peripheral portion of the substrate to rotate the plurality of chuck pins about the rotation axis by holding the substrate horizontally and holding the substrate horizontally. Parallel to the substrate rotating step of rotating the substrate holding the processing liquid on the upper surface about the rotation axis, and the substrate rotation step, in the same direction as the substrate about the rotation axis. Parallel to the liquid receiving step of causing the cup to receive the processing liquid discharged sideways from the substrate with the rotation of the substrate while rotating, and in parallel with the liquid receiving step, the rotational speed ωc of the cup Equation (1) with respect to the rotational speed ωw of the substrate:
[Equation 3]
ωc <[r / (r + d)] ² · ωw (1)
[Wherein, r represents the radius of the substrate, and d represents the radial distance between the substrate and the cup. ]
A substrate processing apparatus which performs a cup rotation speed control step of controlling in a range satisfying the following conditions. In the cup rotational speed control step, the control device performs the rotational speed ωc of the cup with respect to the rotational speed ωw of the substrate according to Formula (2):
[Equation 4]
ωc = [r / (r + d)] ² · ωw · cosθ (2)
[Wherein, r is the radius of the substrate, d is the radial distance between the substrate and the cup, θ is the discharge angle (90 ° between the discharge direction of the processing solution with respect to the tangential direction of the outer peripheral edge of the substrate >Θ> 0 °). ]
The substrate processing apparatus according to claim 5, wherein the control is performed in a range satisfying the following condition. A cleaning brush for contacting and cleaning the upper surface of the substrate;
A cleaning brush drive unit for driving the cleaning brush;
Further include
The control device executes a brush cleaning step of cleaning the outer peripheral portion by bringing the cleaning brush into contact with the outer peripheral portion of the upper surface of the substrate while rotating the substrate in the substrate rotating step. Or the substrate processing apparatus as described in 6. The controller is
A storage device storing a discharge angle table including a plurality of pieces of substrate information including the rotational speed ωw of the substrate and a plurality of discharge angles θ corresponding to the plurality of pieces of substrate information according to the processing content of the substrate; ,
A discharge angle selection unit which selects the discharge angle θ corresponding to the substrate information from the discharge angle table;
In the cup rotation speed control step, the rotation speed ωc of the cup is determined based on the substrate information including the rotation speed ωw and the discharge angle θ selected in the discharge angle selection step based on the substrate information. The substrate processing apparatus according to claim 6, wherein the control is performed to a range satisfying the equation (2).

Images