JP2018178229A - Processing apparatus and processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a processing apparatus and a processing method capable of processing a base substance in an industrially advantageous manner.SOLUTION: While a conveyance speed or conveyance temperature of mist or droplets is adjusted, processing using the mist or droplets is performed by using a processing apparatus at least comprising an atomization and droplet generation part which atomizes or makes a raw material solution including a processing agent into droplets, and a conveyance processing part which the mist or droplets obtained by the atomization and droplet generation part up to a base substance using a carrier gas and then causes thermal reaction on the base substance, the processing apparatus being characterized in that the conveyance processing part includes detection means for detecting optical characteristics of the mist or droplets, and adjustment means for adjusting a conveyance speed or conveyance temperature of the mist or droplets based upon a detection result of the optical characteristics.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a novel processing apparatus and processing method useful for film formation and etching.

  In a manufacturing process of a semiconductor device, a vacuum device is used for film formation and etching, and as such a vacuum device, a vacuum processing device provided with a plurality of processing chambers is used (Patent Document 1). Such a vacuum processing apparatus includes, for example, a transfer unit inside, and is configured to transfer a substrate in a vacuum atmosphere. However, when film formation processing or etching processing is performed in such a single wafer processing chamber, the processing result (for example, film quality in film formation processing, unevenness in etching processing, etc.) is the environment in the processing chamber at the start of processing. In a processing chamber that has been idle for a long time (standby state) before starting processing, the target processing results can not be obtained for several substrates after starting processing. . Then, in order to solve this problem, the substrate for non-product (dummy) is introduced into the processing chamber prior to the processing of the substrate for product etc. and the inside of the processing chamber is stabilized, and then the substrate for product is introduced. I needed it. The extent to which the dummy is introduced depends on the environment in the processing chamber, the time during which the idling state (standby state) has been made, and the like.

  In addition, a method of forming a film under non-vacuum without using a vacuum device has also been studied. In Patent Document 2, a film formation is made by preheating a spray gas in which fine particles of the atomized solution are contained in a carrier gas by atomizing the source material solution in which the source material is dissolved in a solvent using an ultrasonic transducer. There is disclosed a method of forming a thin film of metal oxide or metal sulfide on the substrate for film formation by spraying on the surface of the substrate and thermally decomposing the source material in the fine particles. Furthermore, in Patent Document 2, the content of the fine particles in the gas for blowing is measured, and the thin film is formed while controlling the output of the ultrasonic transducer so that the measured value becomes an appropriate value. Have been described. However, in the method described in Patent Document 2, there is a problem that the mist or the droplet becomes unstable in practice by changing the output of the ultrasonic transducer, and more specifically, the particles of the mist or the droplet are There is a problem that the diameter (including the concentration) is changed, and it is difficult to obtain an industrially useful uniform film rather than controlling the deposition rate. In particular, in the case of forming a crystalline film, for example, a film having a multilayer structure with completely different crystallinity may be obtained, and the reproducibility is also poor, which is not suitable industrially.

JP, 2012-119626, A JP 2000-144435 A

  An object of the present invention is to provide a processing apparatus and a processing method capable of processing a substrate industrially and advantageously.

As a result of intensive studies to achieve the above object, the present inventors did not change the output of the ultrasonic transducer as in the invention described in Patent Document 2, but changed the transport speed or transport temperature of the mist to form a film. As a result, they have found that stable mist film formation can be realized, and further, it has been found that the film formation rate can be controlled, and a film with uniform film thickness and high quality can be obtained with good reproducibility. The inventors have also found that it is important to detect the optical properties of mist or droplets and to adjust the transport speed or transport temperature of the mist or droplet based on the detection results of the optical properties, and such a processing method It has been found that the processing apparatus can solve the above conventional problems at once.
In addition, after obtaining the above-mentioned findings, the present inventors repeated studies to complete the present invention.

That is, the present invention relates to the following inventions.
[1] The mist or droplet obtained by the atomization / dropletization unit atomizing or dropletizing the raw material solution containing the treatment agent, and the mist or droplet obtained by the atomization / dropletization unit to the substrate using the carrier gas And a transport processing unit for causing a thermal reaction on the substrate, the transport processing unit detecting the optical property of the mist or droplet, and the detection result of the optical property And a control unit configured to control the transport speed or transport temperature of the mist or the droplets on the basis of.
[2] The processing apparatus according to [1], wherein the optical property is transmittance, absorption, reflectance, refractive index, extinction coefficient, or absorption coefficient.
[3] The processing apparatus according to the above [1] or [2], wherein the optical property is transmittance.
[4] The processing apparatus according to any one of the above [1] to [3], wherein the adjusting means is a means for adjusting the transport speed of the mist or the droplets.
[5] The processing apparatus according to the above [4], wherein the adjusting means includes means for adjusting the flow rate of the carrier gas.
[6] The processing apparatus according to any one of the above [1] to [3], wherein the adjusting means is a means for adjusting the transport temperature of the mist or the droplets.
[7] The processing apparatus according to the above [6], wherein the adjusting means includes means for performing preheating.
[8] The processing apparatus according to any one of the above [1] to [7], wherein the processing agent is a film forming raw material, and the processing apparatus is a film forming apparatus.
[9] A method of atomizing or dropletizing a raw material solution containing a treating agent, conveying the resulting mist or droplets to a substrate using a carrier gas, and then thermally reacting the substrate on the substrate to treat the substrate And detecting the optical characteristic of the mist or droplet, and adjusting the conveyance speed or conveyance temperature of the mist or droplet based on the detection result of the optical characteristic.
[10] The processing method according to [9], wherein the optical property is transmittance, absorptivity, reflectance, refractive index, extinction coefficient or absorption coefficient.
[11] The processing method according to [9] or [10], wherein the optical property is transmittance.
[12] The processing method according to any one of the above [9] to [11], wherein the adjustment is performed by adjusting the transport speed of the mist or the droplets.
[13] The processing method according to [12], wherein the adjustment of the transfer speed is performed by adjusting the flow rate of the carrier gas.
[14] The processing method according to any one of the above [9] to [11], wherein the adjustment is performed by adjusting the transport temperature of the mist or the droplets.
[15] The processing method according to [14], wherein the adjustment of the transfer temperature is performed by preheating.
[16] The processing method according to any one of the above [9] to [15], wherein the processing agent is a film forming material, and the process is a film forming process.
[17] A film obtained by using the processing method according to the above [16].

  According to the processing apparatus and processing method of the present invention, the substrate can be industrially advantageously processed.

It is a schematic diagram which shows the suitable one aspect | mode of the processing apparatus of this invention. It is a schematic block diagram explaining the suitable one aspect | mode of the processing apparatus of this invention. It is a figure explaining one aspect of the atomization * dropletization part used in this invention. It is a figure explaining one mode of the ultrasonic transducer used in the present invention. It is a figure explaining the one aspect | mode of the transmittance | permeability measuring device used in this invention. It is a related figure of the transmittance | permeability and film thickness which were obtained in the reference example.

  The processing apparatus of the present invention uses the carrier gas as the mist or droplets obtained in the atomization / dropletization section for atomizing or dropletizing the raw material solution containing the treatment agent and the atomization / dropletization section A processing unit including at least a transport processing unit for transporting the substrate to the substrate and then performing a thermal reaction on the substrate, wherein the transport processing unit detects the optical characteristics of the mist or the droplets; It is characterized by including a control means for controlling the transport speed or transport temperature of the mist or droplet based on the detection result of the characteristic.

  The substrate used in the present invention is not particularly limited, and may be a known one. The material of the substrate is also not particularly limited as long as the object of the present invention is not impaired, and the material may be an organic compound or an inorganic compound. The shape of the substrate may be any shape, and is effective for any shape, for example, plate-like such as flat plate or disc, fiber-like, rod-like, cylindrical, prismatic, Examples thereof include cylindrical, spiral, spherical, ring, and porous bodies, but in the present invention, a substrate is preferable, and a flexible substrate is more preferable. The thickness of the substrate is not particularly limited in the present invention, but is preferably 1 μm to 100 mm, and more preferably 10 μm to 10 mm.

The substrate is not particularly limited as long as the object of the present invention is not impaired, and may be a known substrate. It may be an insulator substrate, a semiconductor substrate, a metal substrate or a conductive substrate. In the present invention, a substrate in which at least one of a metal film, a semiconductor film, a conductive film, and an insulating film is formed on a part or the whole of the substrate is also preferably used as the substrate. It can be used. As a constituent metal of the metal film, for example, one or more selected from gallium, iron, indium, aluminum, vanadium, titanium, chromium, rhodium, nickel, cobalt, zinc, magnesium, calcium, silicon, yttrium, strontium and barium Two or more metals can be mentioned. As a constituent material of the semiconductor film, for example, elemental elements such as silicon and germanium, compounds having elements of groups 3 to 5 and groups 13 to 15 of the periodic table, metal oxides, metal sulfides , Metal selenides, metal nitrides, perovskites, and the like. Further, as a constituent material of the conductive film, for example, tin-doped indium oxide (ITO), fluorine-doped indium oxide (FTO), zinc oxide (ZnO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO) , Tin oxide (SnO ₂ ), indium oxide (In ₂ O ₃ ), tungsten oxide (WO ₃ ), and the like. As a constituent material of the insulating film, for example, aluminum oxide (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), silicon oxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), silicon oxynitride (Si ₄₎ Although O ₅ N ₃ ) and the like can be mentioned, an insulating film made of an insulating oxide is preferable, and a titania film is more preferable.

  The treatment agent used in the present invention is not particularly limited as long as it can treat the substrate, and may be known. As said processing agent, the raw material for film-forming, an etching agent, a surface modifier, a cleaning agent, a rinse agent etc. are mentioned, for example.

The film-forming material may be a known film-forming material, as long as the object of the present invention is not impaired, and may be an inorganic material or an organic material. In the present invention, the film-forming material preferably contains a metal or a metal compound, and gallium, iron, indium, aluminum, vanadium, titanium, chromium, rhodium, nickel, cobalt, zinc, magnesium, calcium, yttrium, It is more preferable to include one or more metals selected from strontium, barium and silicon, and most preferable to be a silicon-containing compound. The silicon-containing compound is not particularly limited as long as it is a compound containing at least one silicon. Examples of the silicon-containing compound include silanes, siloxanes, silazanes and polysilazanes. Examples of the silane include monosilane (SiH ₄ ) and alkoxysilane. Examples of the alkoxysilane include tetraethoxysilane (TEOS), tetramethoxysilane, tetrapropoxysilane, tetrabutoxysilane, tetraamyloxysilane, tetraoctyloxysilane, tetranonyloxysilane, dimethoxydiethoxysilane, and dimethoxydiiso. Examples thereof include propoxysilane, diethoxydiisopropoxysilane, diethoxydibutoxysilane, diethoxyditrityloxysilane, and mixtures thereof. Examples of the siloxane include hexamethyldisiloxane, 1,3-dibutyltetramethyldisiloxane, 1,3-diphenyltetramethyldisiloxane, 1,3-divinyltetramethyldisiloxane, hexaethyldisiloxane and 3-glycid. And xylpropyl pentamethyldisiloxane and the like. Examples of silazane include hexamethyldisilazane and hexaethyldisilazane. In the present invention, it is also preferable that the film-forming material contains the metal in the form of a complex or a salt. Examples of the form of the complex include organic complexes and the like, and more specifically, for example, acetylacetonato complex, carbonyl complex, ammine complex, hydride complex, quinolinol complex and the like. Examples of the form of the salt include halides, and more specifically, for example, metal chlorides, metal bromides, metal iodides and the like.

  The etching agent is not particularly limited as long as the object of the present invention is not impaired, and may be a known etching agent. Examples of the etching agent include organic acids (eg, sulfuric acid, praise, hydrochloric acid, acetic acid, formic acid, hydrofluoric acid), oxidizing agents (eg, hydrogen peroxide, concentrated sulfuric acid), chelating agents (eg, iminodiacetic acid, nitrilotritriol). Acetic acid, ethylenediaminetetraacetic acid, ethylenediamine, ethanolamine, aminopropanol), thiol compounds and the like can be mentioned. Further, examples of the etching agent include those having an etching action such as imidazole and imidazole derivative compounds.

  The surface modifier is not particularly limited as long as the object of the present invention is not impaired, and may be known. Examples of the surface modifier include anionic and cationic surfactants, nonionic surfactants, amphoteric surfactants, polymeric surfactants, pigment dispersants, alcohols, fatty acids, amines, and amides. , Imides, metal soaps, fatty acid oligomer compounds, silane coupling agents, titanate coupling agents, aluminate coupling agents, phosphoric acid coupling agents, carboxylic acid coupling agents, fluorochemical surfactants, boron interface An activator etc. are mentioned. The raw material solution may contain the surface modifying agent singly or in combination of two or more.

  The cleaning agent is not particularly limited as long as the object of the present invention is not impaired, and may be known. Examples of the cleaning agent include surfactants (such as anionic surfactants and nonionic surfactants) and metal soaps.

  The rinse agent is not particularly limited as long as the object of the present invention is not impaired, and may be known. Examples of the rinse agent include fluorine-based rinse agents (hydrofluorocarbons (HFCs) and hydrofluoroethers (HFEs)).

The atomization / dropletization unit is not particularly limited as long as it can atomize or dropletize the raw material solution containing the treatment agent. The raw material solution is used as it is or after dissolving or dispersing the treatment agent in a solvent or the like.
The solvent is not particularly limited as long as the treatment agent dissolves or disperses, and can be atomized or formed into droplets, and may be an inorganic solvent or an organic solvent. Or a mixture of these. In the present invention, the solvent is preferably water.
The content of the treatment agent in the treatment solution is not particularly limited, but is preferably, for example, 0.0001 to 80% by weight, and more preferably 0.001% to 50% by weight.

  In the present invention, the mist or droplet is preferably obtained by ultrasonic atomization. The mist or droplet obtained by using ultrasonic waves is preferable in that it has an initial velocity of zero and floats in the air, and is excellent in the stability of the shape, and for example, it does not spray like a spray but Mist that can be suspended and transported as a gas is more preferable because there is no damage due to collision energy. The droplet size is not particularly limited, and may be about several mm, but preferably 50 μm or less, more preferably 1 to 10 μm.

  The transport processing unit transports the mist or droplets obtained by the atomization / dropletization unit to the substrate using a carrier gas, and then causes a thermal reaction on the substrate. The carrier gas is not particularly limited as long as the object of the present invention is not impaired. For example, oxygen, ozone, an inert gas such as nitrogen or argon, or a reducing gas such as hydrogen gas or a forming gas is preferable. It can be mentioned. In addition, although one kind of carrier gas may be used, two or more kinds may be used, and a dilution gas with a reduced flow rate (for example, 10-fold dilution gas etc.) is further used as a second carrier gas. It is also good. Further, the carrier gas may be supplied not only to one place, but also to two or more places. The flow rate of the carrier gas is not particularly limited, but is preferably 0.01 to 20 L / min, and more preferably 1 to 10 L / min. In the case of the dilution gas, the flow rate of the dilution gas is preferably 0.001 to 2 L / min, and more preferably 0.1 to 1 L / min.

  The thermal reaction may be any reaction as long as the mist or droplets react with heat, and the reaction conditions are not particularly limited as long as the object of the present invention is not impaired. In the present invention, the thermal reaction is usually performed at a temperature of about 1500 ° C. or less, but in the present invention, it is preferably performed at a temperature of about 900 ° C. or less, more preferably 650 ° C. or less. The lower limit is not particularly limited as long as the object of the present invention is not impaired, but 80 ° C. or more is preferable, 100 ° C. or more is more preferable, and 120 ° C. or more is most preferable. The thermal reaction may be performed under any atmosphere of vacuum, non-oxygen atmosphere, reducing gas atmosphere and oxygen atmosphere, as long as the object of the present invention is not impaired. It is preferred to be carried out under an oxygen atmosphere. Moreover, although it may be performed under any pressure of atmospheric pressure, under pressure and under reduced pressure, in the present invention, it is preferable to carry out under atmospheric pressure. In the present invention, when the process is a film forming process, the film thickness of the film to be formed can be easily set by adjusting the film forming time.

  Further, the transport processing unit includes a detection unit that detects an optical characteristic of the mist or the droplet, and an adjustment unit that adjusts a transport speed or a transport temperature of the mist or the droplet based on a detection result of the optical characteristic. There is.

  The detection means is not particularly limited as long as it can detect the optical properties of the mist or droplet, and may be a known means. Examples of the optical properties include transmittance, absorptivity, reflectance, refractive index, extinction coefficient or absorption coefficient, but in the present invention, it is preferable that the optical properties be transmittance. The adjusting means is not particularly limited as long as it can adjust the conveying speed or the conveying temperature of the mist or the droplets based on the detection result of the optical characteristic, and may be a known means. Examples of means for adjusting the transfer speed include means for adjusting the flow rate of the carrier gas. Moreover, as a means to adjust conveyance temperature, the means etc. which preheat are mentioned, for example.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited to these drawings.

  FIG. 1 shows a film forming apparatus 9 which is a preferred embodiment of the processing apparatus of the present invention. The film forming apparatus 9 of FIG. 1 includes a transmittance measuring device 1, a carrier gas supply unit 2a, a carrier gas (dilution) supply unit 2b, a flow meter 3a, a flow control device 3b, a film 4, a raw material solution 4a, a container 5, a super An acoustic wave transfer liquid 5a, an ultrasonic transducer 6, a supply pipe 7, a tubular furnace 8 and a personal computer 10 are provided.

FIG. 2 is a schematic block diagram of a film forming apparatus 9 which is a preferred embodiment of the processing apparatus of the present invention, and FIG. 2 is also used to explain a preferred embodiment of the present invention. The container 5 contains the ultrasonic transmission fluid 5 a, and the mist generating source 24 contains the raw material solution 4 a. Further, a carrier gas supply unit 2a and a carrier gas (dilution) supply unit 2b are connected to the film forming apparatus 9 through the flow meter 3a and the flow rate adjustment device 3b, respectively, and the carrier gas is supplied from the mist generation source 24 and supply. Each of the tubes 7 is configured to be able to be supplied.
The ultrasonic transducer 6 is connected to an oscillator, and is configured to be irradiated with ultrasonic waves from the ultrasonic transducer 6 when the oscillator is operated. When the ultrasonic waves are irradiated, ultrasonic vibration is transmitted to the raw material solution 4a through the ultrasonic wave transmitting liquid 5a in the container 5, and atomization or dropletization of the raw material solution 4a occurs. The mist or droplets generated by atomization or dropletization move in the supply pipe 7 by the supply of the carrier gas and are conveyed to the tubular furnace 8.

  FIG. 3 shows one aspect of the atomization / dropletization unit used in the present invention. On the container 5 contained in the water 5 a as the ultrasonic transmission fluid, a bottomless container containing the raw material solution a is provided, and is closed by the film 4. The ultrasonic transducer 6 is provided at the bottom of the container 5, and the ultrasonic transducer 6 and the oscillator 16 are connected. Then, when the oscillator 16 is operated, the ultrasonic transducer 6 vibrates, and the ultrasonic wave propagates into the mist generation source 4 through the water 5a, so that the raw material solution 4a is atomized or drips. ing.

  The film 4 is capable of transmitting ultrasonic waves, and can be closed at the bottom portion in the bottomless container by the fitting or screwing, and further, the raw material is placed in the bottomless container. There is no particular limitation as long as the solution can be accommodated. In addition, the said bottom face part says the part corresponded to the bottom face of the container of the said raw material solution, and if it is a part which can become the bottom face of a bottomless container, it will not be specifically limited.

  The ultrasonic wave transmitting liquid is not limited to water, and examples thereof include inorganic solvents and organic solvents, but in the present invention, inorganic solvents are preferable, and water is more preferable. More specifically, examples of the water include pure water, ultrapure water, tap water, well water, spring water, mineral water, hot spring water, spring water, fresh water, seawater and the like. Water treated with purification, heating, sterilization, filtration, ion exchange, electrolysis, adjustment of osmotic pressure, buffering, etc. (for example, ozone water, purified water, hot water, ion exchanged water, physiological saline, phosphate buffer) , Phosphate buffered saline, etc.) are also included as examples.

  FIG. 3 shows an aspect of the ultrasonic transducer 6 shown in FIGS. 1 and 2. The ultrasonic transducer 6 is provided with a disk-like piezoelectric element 6b in a cylindrical elastic body 6d on a support 6e, and electrodes 6a and 6c are provided on both sides of the piezoelectric element 6b. There is. Then, when an oscillator is connected to the electrode to change the oscillation frequency, an ultrasonic wave having a resonance frequency in the thickness direction of the piezoelectric vibrator and a resonance frequency in the radial direction is generated.

  The transmittance measuring device 31 preferably includes a red laser 32 and a light receiving sensor 33, as shown in FIG. 5, and is installed so that the red laser 32 and the light receiving sensor 33 face each other through the supply pipe 7. ing. As shown in FIG. 5, the mist or the droplets flow in the middle and lower portions in the supply pipe 7. Therefore, the light from the red laser 32 is blocked by the mist or the droplets, and the light receiving sensor 33 reduces the amount of light to be transmitted. The amount of decrease (permeability) is used to apply to the relational expression between the transmittance and film thickness obtained by measurement in advance to adjust the transport speed or transport temperature of the mist or the droplets. The relational expression is preferably a relational expression between the transmittance of mist or liquid droplets and the one capable of controlling the film forming speed (for example, film forming speed, film thickness, etc.), and there is no correlation coefficient in the relational expression. May be For example, a relationship diagram of transmittance and film thickness shown in FIG. 6 may be used as a relationship equation. The control means is not particularly limited as long as the object of the present invention is not impaired, and may be a known means. Examples of the control means include PID control means. The transmittance measured by the transmittance measuring device 1 is sent to the personal computer 10 which is the PID controller, and the output value of the flow rate adjusting device 3b is calibrated by comparing with the relational expression and the preset value set in advance. Control values are calculated. As PID control used for this operation, for example, P control, I control, D control, P-I control, and all possible combinations of control can be considered. Then, based on the control value, control information is sent from the personal computer 10 to the 3b, and the flow rate adjusting device 3b adjusts the flow rate of the carrier gas (dilution) supplied from the carrier gas (dilution) supply means. The personal computer 10 is not particularly limited as long as it has a CPU, and may be a sequencer or the like. In the present invention, by adjusting the transport speed or transport temperature of the mist or droplet in this manner, not only the deposition rate can be controlled, but also the deposition quality can be made better.

  The tubular furnace 8 includes a heater 28, a substrate 20 mounted on the susceptor 21, and an exhaust port 29. In the tubular furnace 8, the mist generated in the mist generation source 24 flows into the tubular furnace 8 through the supply pipe 7 by the carrier gas and is configured to thermally react on the substrate 20 placed on the susceptor 21. It is done. The tubular furnace 8 is also connected to the exhaust port 29, and is configured to carry the mist, droplets or gas after the thermal reaction to the exhaust port 29.

  After weighing 4.1 g of indium (III) acetylacetonate, mix it in a beaker containing 195 cc of pure water, and further add 5.7 cc of hydrochloric acid diluted to 35% to this beaker to dissolve it sufficiently. The solution obtained was used as a raw material solution. Further, the GaN substrate was placed on the susceptor and set in a tubular furnace, and then the temperature of the heater was raised to 500.degree. During the temperature rise, 2 LPM of nitrogen gas was flowed from the carrier gas supply means for dilution so that thermal oxidation did not occur on the substrate surface.

After raising the temperature to 500 ° C., the ultrasonic transducer was turned on and operated to atomize the raw material solution. After atomization was started for 30 seconds, when atomization was stabilized, air was flowed at a flow rate of 1.5 LPM and 2 LPM from the carrier gas supply means and the carrier gas (dilution) supply means, respectively. Then, when the intensity of the transmitted light was measured by the light receiving sensor of the transmittance measuring device, the transmission intensity was 35% of the reference intensity before pouring the mist, and the transmittance was measured. After film formation, a 600 nm indium oxide film was formed. The film formation time was 20 minutes.
Furthermore, in the same manner as described above, the experiment was repeated to derive the relationship between the transmittance and the film thickness shown in FIG.

  The values of transmittance measured sequentially to the sequencer were input, and the flow rate of the carrier gas was calculated by PID control, and the reproduction experiment was repeated. In all the experiments, the film forming speed was nearly equal and stable with good reproducibility. It was possible to realize film formation.

  The processing apparatus and processing method of the present invention can be used to treat any substrate and is industrially useful. In particular, in the case of forming a film on the substrate surface or etching, the processing apparatus and processing method of the present invention can be suitably used.

DESCRIPTION OF SYMBOLS 1 Permeability meter 2a Carrier gas supply means 2b Carrier gas (dilution) supply means 3a Flow meter 3b Flow control device 4 Film 4a Raw material solution 5 Container 5a Ultrasonic wave transmission liquid 6 Ultrasonic vibrator 6a electrode 6b Piezoelectric element 6c electrode 6d elastic body 6e support 7 supply tube 8 tube furnace 9 film forming apparatus 10 personal computer 16 oscillator 20 substrate 21 susceptor 24 mist source 24a raw material solution 28 heater 29 exhaust port 31 transmittance meter 32 red laser 33 light receiving sensor 34 mist 37 Supply pipe

Claims (17)

A mist or droplet obtained in the atomization / dropletization unit for atomizing or dropletizing the raw material solution containing the treatment agent, and the mist or droplets obtained in the atomization / dropletization unit are transported to the substrate using a carrier gas, and then A processing apparatus comprising at least a transport processing unit for causing a thermal reaction on the substrate, wherein the transport processing unit detects the optical characteristic of the mist or droplet, and the detection unit detects the optical characteristic based on the detection result. What is claimed is: 1. A processing apparatus comprising: control means for controlling the transport speed or transport temperature of mist or droplets. The processing apparatus according to claim 1, wherein the optical property is transmittance, absorption, reflectance, refractive index, extinction coefficient or absorption coefficient. The processing apparatus according to claim 1, wherein the optical property is transmittance. The processing apparatus according to any one of claims 1 to 3, wherein the adjusting means is a means for adjusting the transport speed of the mist or the droplets. 5. The processor of claim 4, wherein the adjusting means comprises means for adjusting the flow rate of the carrier gas. The processing apparatus according to any one of claims 1 to 3, wherein the adjusting means is a means for adjusting the transport temperature of the mist or the droplets. 7. The processor of claim 6, wherein the adjusting means comprises means for performing a preheat. The processing apparatus according to any one of claims 1 to 7, wherein the processing agent is a film forming material, and the processing apparatus is a film forming apparatus. A method of atomizing or dropletizing a raw material solution containing a treating agent, conveying the resulting mist or droplets to a substrate using a carrier gas, and then thermally reacting the substrate on the substrate to treat the substrate. A processing method comprising: detecting an optical characteristic of the mist or droplet; and adjusting a conveyance speed or a conveyance temperature of the mist or the droplet based on a detection result of the optical characteristic. The processing method according to claim 9, wherein the optical property is transmittance, absorption, reflectance, refractive index, extinction coefficient or absorption coefficient. The processing method according to claim 9 or 10, wherein the optical property is transmittance. The processing method according to any one of claims 9 to 11, wherein the adjustment is performed by adjusting the transport speed of the mist or the droplets. The processing method according to claim 12, wherein the adjustment of the transfer speed is performed by adjusting the flow rate of the carrier gas. The processing method according to any one of claims 9 to 11, wherein the adjustment is performed by adjusting the transport temperature of the mist or the droplets. The treatment method according to claim 14, wherein the adjustment of the transfer temperature is performed by preheating. The processing method according to any one of claims 9 to 15, wherein the processing agent is a film forming material, and the process is a film forming process. A film obtained using the processing method according to claim 16.