JP2018174238A - Semiconductor light-emitting element, manufacturing method thereof, and light-emitting module - Google Patents

Abstract

The output of deep ultraviolet light emitted from a semiconductor light emitting device is increased.
A semiconductor light emitting device includes a semiconductor layer provided on a first main surface of a substrate. The semiconductor layer 18 includes an active region 13 that is configured to emit deep ultraviolet light 19. The semiconductor light emitting element 10 includes a periodic concavo-convex structure 17 formed on the second main surface 11 b of the substrate 11. The periodic uneven structure 17 includes a plurality of protrusions 17a. The first area of the active region 13 is 0.15 mm ² or more. The ratio of the third area of the plurality of protrusions 17a to the second area of the second major surface 11b is 60% or more and 100% or less. Each of the plurality of protrusions 17a has an aspect ratio of 0.6 or more.
[Selection] Figure 3

Description

  The present invention relates to a semiconductor light emitting device, a method for manufacturing the same, and a light emitting module.

In order to improve the extraction efficiency of deep ultraviolet light from a semiconductor light emitting element, it is known to form an uneven structure on the back surface of the substrate of the semiconductor light emitting element that emits deep ultraviolet light (see Non-Patent Document 1). . The semiconductor light emitting device disclosed in Non-Patent Document 1 has a mesa size of 0.1 mm ² , and the concavo-convex structure is formed on the back surface of the substrate by electron beam lithography and subsequent etching.

S. Inoue, 4 others, “Light extraction enhancement of 265nm deep-ultraviolet light-emitting diodes with over 90mW output power via an AlN hybrid nanostructure”, Applied Physics Letters, March 30, 2015, vol. 106, p. 131104

  However, the output of deep ultraviolet light emitted from the semiconductor light emitting device disclosed in Non-Patent Document 1 is not sufficient. The present invention has been made in view of the above problems, and an object thereof is to increase the output of deep ultraviolet light emitted from a semiconductor light emitting device. Another object of the present invention is to provide a method for manufacturing a semiconductor light emitting device, which can easily manufacture a semiconductor light emitting device with an increased output of emitted deep ultraviolet light at a high throughput, at a low cost. . Still another object of the present invention is to increase the output of deep ultraviolet light emitted from the light emitting module.

A semiconductor light emitting device of the present invention comprises a substrate having a first main surface and a second main surface opposite to the first main surface, and a semiconductor layer provided on the first main surface. Prepare. The semiconductor layer includes an active region configured to emit deep ultraviolet light. The semiconductor light-emitting device of the present invention includes a periodic concavo-convex structure formed on the second main surface. The periodic uneven structure includes a plurality of protrusions protruding from the second main surface. The first area of the active region in the second plan view of the second main surface is 0.15 mm ² or more. The ratio of the third area of the plurality of protrusions in the second plan view of the second main surface to the second area of the second main surface in the second plan view of the second main surface is 60 % Or more and 100% or less. Each of the plurality of protrusions has an aspect ratio of 0.6 or more.

  According to the semiconductor light emitting device of the present invention, the output of deep ultraviolet light emitted from the semiconductor light emitting device can be increased.

It is a schematic sectional drawing of the light emitting module which concerns on Embodiment 1 of this invention. 1 is a schematic plan view of a semiconductor light emitting element according to a first embodiment of the present invention. FIG. 3 is a schematic cross-sectional view of the semiconductor light emitting element according to Embodiment 1 of the present invention, taken along a cross-sectional line III-III shown in FIG. 2. FIG. 4 is a schematic cross-sectional view of the semiconductor light emitting element according to Embodiment 1 of the present invention taken along a cross-sectional line IV-IV shown in FIG. 2. 1 is a schematic bottom view of a semiconductor light emitting element according to a first embodiment of the present invention. It is a figure which shows the flowchart of the manufacturing method of the semiconductor light-emitting device based on Embodiment 1 of this invention. It is a schematic sectional drawing which shows 1 process of the manufacturing method of the semiconductor light-emitting device concerning Embodiment 1 of this invention. FIG. 8 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 7 in the method for manufacturing the semiconductor light emitting element according to Embodiment 1 of the present invention. FIG. 9 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 8 in the method for manufacturing the semiconductor light emitting element according to Embodiment 1 of the present invention. FIG. 10 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 9 in the method for manufacturing the semiconductor light emitting element according to Embodiment 1 of the present invention. FIG. 11 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 10 in the method for manufacturing the semiconductor light emitting element according to Embodiment 1 of the present invention. FIG. 12 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 11 in the method for manufacturing the semiconductor light emitting element according to Embodiment 1 of the present invention. FIG. 13 is a schematic cross-sectional view showing a step subsequent to the step shown in FIG. 12 in the method for manufacturing the semiconductor light emitting element according to Embodiment 1 of the present invention. It is a schematic sectional drawing which shows the next process of the process shown in FIG. 13 in the manufacturing method of the semiconductor light-emitting device concerning Embodiment 1 of this invention. Included in the light emitting module according to the first embodiment of the present invention with respect to the current injected into the semiconductor light emitting element included in the light emitting module according to the first embodiment of the present invention and the semiconductor light emitting element included in the light emitting module of the comparative example. It is a figure which shows the graph showing the change of the optical output of the semiconductor light emitting element contained in the light emitting module of a semiconductor light emitting element and a comparative example. Included in the light emitting module according to the first embodiment of the present invention with respect to the current injected into the semiconductor light emitting element included in the light emitting module according to the first embodiment of the present invention and the semiconductor light emitting element included in the light emitting module of the comparative example. It is a figure which shows the graph showing the change of the external quantum efficiency of the semiconductor light-emitting device contained in the light-emitting module of a semiconductor light-emitting device and a comparative example. Included in the light emitting module according to the first embodiment of the present invention with respect to the current injected into the semiconductor light emitting element included in the light emitting module according to the first embodiment of the present invention and the semiconductor light emitting element included in the light emitting module of the comparative example. It is a figure which shows the graph showing the change of the peak wavelength of the electroluminescence intensity | strength of the semiconductor light emitting element contained in the light emitting module of a semiconductor light emitting element and a comparative example. Included in the light emitting module according to the first embodiment of the present invention with respect to the current injected into the semiconductor light emitting element included in the light emitting module according to the first embodiment of the present invention and the semiconductor light emitting element included in the light emitting module of the comparative example. It is a figure which shows the graph showing the change of the temperature of the junction part of the semiconductor light emitting element contained in the light emitting module of a semiconductor light emitting element and a comparative example. It is a general | schematic partial enlarged bottom view of the semiconductor light-emitting device concerning Embodiment 2 of this invention. FIG. 20 is a schematic partial enlarged cross-sectional view of the semiconductor light emitting element according to the second embodiment of the present invention taken along a cross-sectional line XX-XX shown in FIG. 19. It is a figure which shows the graph showing the change of the optical output of the semiconductor light-emitting device concerning Embodiment 2 of this invention with respect to the radius of the upper surface of a truncated cone. It is a general | schematic partial enlarged bottom view of the semiconductor light-emitting device concerning Embodiment 3 of this invention. FIG. 23 is a schematic partial enlarged cross-sectional view of the semiconductor light-emitting element according to the third embodiment of the present invention taken along a cross-sectional line XXIII-XXIII shown in FIG. It is a schematic sectional drawing of the semiconductor light-emitting device based on Embodiment 4 of this invention. It is a figure which shows the flowchart of the one part process of the manufacturing method of the semiconductor light-emitting device concerning Embodiment 4 of this invention. It is a schematic sectional drawing of the semiconductor light-emitting device based on Embodiment 5 of this invention. It is a figure which shows the flowchart of the one part process of the manufacturing method of the semiconductor light-emitting device concerning Embodiment 5 of this invention. It is a schematic sectional drawing of the light emitting module which concerns on Embodiment 6 of this invention.

  Embodiments of the present invention will be described below. The same components are denoted by the same reference numerals, and description thereof will not be repeated.

(Embodiment 1)
With reference to FIG. 1, the light emitting module 1 which concerns on Embodiment 1 is demonstrated. The light emitting module 1 according to the present embodiment mainly includes a semiconductor light emitting element 10 configured to emit deep ultraviolet light 19 and a base 30 on which the semiconductor light emitting element 10 is placed. The light emitting module 1 according to the present embodiment includes a semiconductor light emitting element 10 configured to emit deep ultraviolet light 19, a liquid 62 that seals the semiconductor light emitting element 10, and the semiconductor light emitting element 10 and the liquid 62. You may mainly provide the package (30, 60) to accommodate.

  Examples of materials used for the base 30 include metals, resins, and ceramics. The base 30 is made of a material having high thermal conductivity, and may function as a heat sink.

The semiconductor light emitting element 10 may be placed on the base 30 via the submount 20. Examples of the material of the submount 20 include aluminum nitride (AlN), alumina (Al ₂ O ₃ ), silicon carbide (SiC), diamond, and silicon (Si). The submount 20 may be made of a material having high thermal conductivity of 5 W / (m · K) or more. The submount 20 may be made of aluminum nitride (AlN) having a thermal conductivity of 160 W / (m · K) or more and 250 W / (m · K) or less. In order to reflect the deep ultraviolet light 19 from the semiconductor light emitting element 10 on the surface of the submount 20 on which the semiconductor light emitting element 10 is mounted, aluminum (Al), titanium (Ti), nickel (Ni), gold (Au ) Or a reflective layer made of silver (Ag) or the like may be provided. The submount 20 may be fixed to the base 30 using a conductive paste such as eutectic solder made of gold-tin (AuSn), silver paste, or an adhesive.

  A first conductive pad 21 and a second conductive pad 22 may be provided on the surface of the submount 20 on which the semiconductor light emitting element 10 is placed. The n-type electrode 15 of the semiconductor light emitting element 10 and the first conductive pad 21 of the submount 20 are connected using the conductive bonding member 25, and the p-type electrode 16 of the semiconductor light emitting element 10 and the submount 20 are connected. The second conductive pad 22 is connected. As the joining member 25, for example, solder made of gold (Au) -tin (Sn), silver (Ag) -tin (Sn), metal bumps made of gold (Au), copper (Cu), or the like, or silver paste A conductive paste such as can be used.

  The semiconductor light emitting element 10 may be flip-chip bonded on the submount 20. That is, the substrate 11 side of the semiconductor light emitting element 10 is directed to the side opposite to the submount 20 and the base 30, and the semiconductor layer 18 (n-type semiconductor layer 12, active region 13, p-type semiconductor layer 14 of the semiconductor light emitting element 10 is provided. The semiconductor light emitting element 10 may be mounted on the submount 20 with the) side facing the submount 20 and the base 30. Since the semiconductor light emitting element 10 is flip-chip bonded on the submount 20, the absorption of the deep ultraviolet light 19 emitted from the active region 13 by the p-type semiconductor layer 14 can be reduced.

  The light emitting module 1 of the present embodiment may further include conductive wires 33 and 34, an insulating layer 35, an electrical wiring 37, and conductive pads 36 and 38 connected to the electrical wirings 37 and 39. The insulating layer 35, the electrical wirings 37 and 39, and the conductive pads 36 and 38 are provided around the submount 20 and on the base 30. The electrical wirings 37 and 39 may be embedded in the insulating layer 35. The conductive pads 36 and 38 are exposed from the insulating layer 35. The conductive wire 33 connects the conductive pad 36 and the first conductive pad 21. The conductive wire 34 connects the conductive pad 36 and the second conductive pad 22. For example, gold (Au) wires may be used as the conductive wires 33 and 34. Semiconductor light emission from an external power source (not shown) through the electrical wirings 37 and 39, the conductive pads 36 and 38, the conductive wires 33 and 34, the first conductive pad 21, the second conductive pad 22 and the bonding member 25 A current is supplied to the element 10, and the semiconductor light emitting element 10 emits deep ultraviolet light 19.

  A semiconductor light emitting element 10 according to the first embodiment will be described with reference to FIGS. The conductive light emitting element mainly includes a substrate 11, an n-type semiconductor layer 12, an active region 13, a p-type semiconductor layer 14, an n-type electrode 15, a p-type electrode 16, and a periodic uneven structure 17. .

The substrate 11 has a first main surface 11a and a second main surface 11b opposite to the first main surface 11a. The second main surface 11b may be an exit surface. Whether the area of the first main surface 11a of the substrate 11 in the first plan view of the first main surface 11a is the same as the area of the active region 13 in the first plan view of the first main surface 11a, Greater than that. The area of the second main surface 11b of the substrate 11 in the second plan view of the second main surface 11b is the same as the first area of the active region 13 in the second plan view of the second main surface 11b. Is greater than that. The first area of the active region 13 in the second plan view of the second main surface 11b may be the same as the area of the active region 13 in the first plan view of the first main surface 11a. The second area of the second main surface 11b in the second plan view of the second main surface 11b may be 0.50 mm ² or more, or 1.0 mm ² or more. may also be 0 mm ² or more, it may be 5.0 mm ² or more. The second area of the second main surface 11b is not particularly limited, but may be 30 mm ² or less, 20 mm ² or less, or 10 mm ² or less.

  The substrate 11 preferably has a high transmittance such as 50% or more with respect to the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. The substrate 11 is not particularly limited, and may be, for example, an aluminum nitride (AlN) substrate, a silicon carbide (SiC) substrate, a sapphire substrate, or a gallium nitride (GaN) substrate. A template substrate may be used as the substrate 11. The template substrate is a substrate in which a base layer made of aluminum nitride (AlN), aluminum gallium nitride (AlGaN), or the like is formed on the substrate 11.

Aluminum nitride (AlN) has a lattice constant and thermal expansion coefficient close to those of aluminum gallium nitride (AlGaN). Therefore, the aluminum nitride (AlN) substrate can reduce the dislocation defect density in the semiconductor layer 18 formed on the substrate 11 and containing aluminum gallium nitride (AlGaN) as a main component. As the substrate 11, an aluminum nitride (AlN) substrate prepared by a hydride vapor phase epitaxy (HVPE) method may be used. By making an aluminum nitride (AlN) substrate by a hydride vapor phase epitaxy (HVPE) method, the light absorption coefficient of the aluminum nitride (AlN) substrate can be reduced to about 10 cm ⁻¹ or less at a wavelength of 265 nm.

  A semiconductor layer 18 is provided on the first major surface 11 a of the substrate 11. The semiconductor layer 18 may include an n-type semiconductor layer 12, an active region 13, and a p-type semiconductor layer 14. The n-type semiconductor layer 12 may be provided on the substrate 11 side with respect to the active region 13. The p-type semiconductor layer 14 may be provided on the side opposite to the substrate 11 with respect to the active region 13.

The n-type semiconductor layer 12 may be made of a nitride semiconductor made of AlInGaN. More specifically, n-type semiconductor layer _{12, Al x1 In y1 Ga z1 N} (x 1, y 1, z 1 _{is, 0 ≦ x 1 ≦ 1.0,0 ≦} y 1 ≦ 0.1,0 ≦ z ₁ ≦ 1.0, which is a rational number, and x ₁ + y ₁ + z ₁ = 1.0). In particular, n-type semiconductor layer _{12, Al x1 Ga z1 N (x} 1, z 1 is a rational number satisfying _{0 ≦ x 1 ≦ 1.0,0 ≦ z} 1 ≦ 1.0, x 1 + z ₁ = 1.0). The n-type semiconductor layer 12 may include an n-type impurity such as silicon (Si), germanium (Ge), tin (Sn), oxygen (O), or carbon (C). The concentration of the n-type impurity in the n-type semiconductor layer 12 may be 1.0 × 10 ¹⁷ cm ⁻³ or more and 1.0 × 10 ²⁰ cm ⁻³ or less. The concentration of the n-type impurity in the n-type semiconductor layer 12 may be 1.0 × 10 ¹⁸ cm ⁻³ or more and 1.0 × 10 ¹⁹ cm ⁻³ or less. The n-type semiconductor layer 12 may have a thickness of 100 nm or more, and may have a thickness of 500 nm or more. The n-type semiconductor layer 12 may have a thickness of 10000 nm or less, or may have a thickness of 3000 nm or less.

  In order to confine electrons and holes in the active region 13 by the n-type semiconductor layer 12 and to prevent the deep ultraviolet light 19 emitted from the active region 13 from being absorbed by the n-type semiconductor layer 12, the n-type semiconductor layer 12 preferably has a larger band gap energy than the energy of the deep ultraviolet light 19 emitted from the active region 13. The n-type semiconductor layer 12 has a lower refractive index than the active region 13 and may function as a cladding layer. The n-type semiconductor layer 12 may be composed of a single layer, or may be composed of a plurality of layers having different Al compositions, In compositions, or Ga compositions. A plurality of layers having different Al compositions, In compositions, or Ga compositions may have a superlattice structure or a graded composition structure in which the composition gradually changes.

An active region 13 is provided on the n-type semiconductor layer 12. The active region 13 is configured such that deep ultraviolet light 19 can be emitted. The deep ultraviolet light 19 has a wavelength of 190 nm or more. The deep ultraviolet light 19 may have a wavelength of 200 nm or more, and may have a wavelength of 220 nm or more. The deep ultraviolet light 19 has a wavelength of 350 nm or less. The deep ultraviolet light 19 may have a wavelength of 320 nm or less, and may have a wavelength of 300 nm or less. The first area of the active region 13 in the second plan view of the second main surface 11b is 0.15 mm ² or more. The first area of the active region 13 in the second plan view of the second main surface 11b may be 0.25 mm ² or more, and the active region 13 in the second plan view of the second main surface 11b. The first area may be 0.35 mm ² or more. The first area of the active region 13 in the second plan view of the second main surface 11b is not particularly limited, but may be 10 mm ² or less, or 5.0 mm ² or less. may also be 0 mm ² or less, it may also be 1.0 mm ² or less, and may be 0.5 mm ² or less.

The active region 13 may be made of a nitride semiconductor made of AlInGaN. More specifically, the active region 13 is made of Al _x2 In _{y2 Gaz2} N (x ₂ , y ₂ , z ₂ are 0 ≦ x ₂ ≦ 1.0, 0 ≦ y ₂ ≦ 0.1, 0 ≦ z ₂ ≦ 1.0 and a well layer composed of x ₂ + y ₂ + z ₂ = 1.0) and Al _x3 In _y3 Ga _z3 N (x ₃ , y ₃ , and z ₃ are rational numbers that satisfy 0 ≦ x ₃ ≦ 1.0, 0 ≦ y ₃ ≦ 0.1, and 0 ≦ z ₃ ≦ 1.0, and x ₃ + y ₃ + z ₃ = 1.0 And a multi-quantum well (MQW) structure including a barrier layer composed of In order to confine electrons and holes in the active region 13 by the n-type semiconductor layer 12 and the p-type semiconductor layer 14, the active region 13 has a smaller band gap energy than the n-type semiconductor layer 12 and the p-type semiconductor layer 14. Is preferred. The active region 13 may have a higher refractive index than the n-type semiconductor layer 12 and the p-type semiconductor layer 14.

  A p-type semiconductor layer 14 is provided on the active region 13. The p-type semiconductor layer 14 may be composed of a first p-type semiconductor layer 14 a located on the active region 13 side and a second p-type semiconductor layer 14 b located on the opposite side to the active region 13.

The first p-type semiconductor layer 14a may be made of a nitride semiconductor made of AlInGaN. More specifically, the first p-type semiconductor layer 14a is made of Al _x4 In _y4 Ga _z4 N (x ₄ , y ₄ , z ₄ are 0 ≦ x ₄ ≦ 1.0, 0 ≦ y ₄ ≦ 0. 1 and a rational number satisfying 0 ≦ z ₄ ≦ 1.0, and x ₄ + y ₄ + z ₄ = 1.0). The first p-type semiconductor layer 14a may include p-type impurities such as magnesium (Mg), zinc (Zn), and beryllium (Be). The concentration of the p-type impurity in the first p-type semiconductor layer 14a may be 1.0 × 10 ¹⁷ cm ⁻³ or more. The concentration of the p-type impurity in the first p-type semiconductor layer 14a may be 1.0 × 10 ¹⁸ cm ⁻³ or more. The first p-type semiconductor layer 14a may have a thickness of 5 nm or more, or may have a thickness of 10 nm or more. The first p-type semiconductor layer 14a may have a thickness of 1000 nm or less, and may have a thickness of 500 nm or less.

  In order to confine electrons and holes in the active region 13 by the first p-type semiconductor layer 14a and to prevent the deep ultraviolet light 19 emitted from the active region 13 from being absorbed by the first p-type semiconductor layer 14a. In addition, the first p-type semiconductor layer 14 a may have a band gap energy larger than the energy of the deep ultraviolet light 19 emitted from the active region 13. In order to uniformly inject holes from the first p-type semiconductor layer 14a into the active region 13, the first p-type semiconductor layer 14a may have a small Al composition ratio. The first p-type semiconductor layer 14a may have a refractive index lower than that of the active region 13, and may function as a cladding layer. The first p-type semiconductor layer 14a may be composed of a single layer, or may be composed of a plurality of layers having different Al compositions, In compositions, or Ga compositions. A plurality of layers having different Al compositions, In compositions, or Ga compositions may have a superlattice structure or a graded composition structure in which the composition gradually changes.

The second p-type semiconductor layer 14b may be made of a nitride semiconductor made of AlInGaN. More specifically, the second p-type semiconductor layer 14b is made of Al _x5 In _y5 Ga _z5 N (x ₅ , y ₅ , z ₅ are 0 ≦ x ₅ ≦ 1.0, 0 ≦ y ₅ ≦ 0. 1 and a rational number satisfying 0 ≦ z ₅ ≦ 1.0, and x ₅ + y ₅ + z ₅ = 1.0). The second p-type semiconductor layer 14b may contain p-type impurities such as magnesium (Mg), zinc (Zn), and beryllium (Be). The second p-type semiconductor layer 14b has a higher p-type conductivity than the first p-type semiconductor layer 14a, and may function as a p-type contact layer. The concentration of the p-type impurity in the second p-type semiconductor layer 14b may be 1.0 × 10 ¹⁷ cm ⁻³ or more. The concentration of the p-type impurity in the second p-type semiconductor layer 14b may be 1.0 × 10 ¹⁸ cm ⁻³ or more. In order to suppress the deep ultraviolet light 19 emitted from the active region 13 from being absorbed by the second p-type semiconductor layer 14b and to obtain a good p-type contact in the second p-type semiconductor layer 14b, The second p-type semiconductor layer 14b may have a thickness of 1 nm to 500 nm.

  In the case where the first p-type semiconductor layer 14a and the second p-type semiconductor layer 14b are made of a nitride semiconductor, the second p-type semiconductor becomes smaller as the Al composition of the nitride semiconductor is smaller and the band gap is smaller. Holes can be uniformly injected from the layer 14b into the active region 13, and good p-type contact characteristics can be obtained. Therefore, the second p-type semiconductor layer 14b may have a small Al composition ratio. In order to suppress the deep ultraviolet light 19 radiated from the active region 13 from being absorbed by the second p-type semiconductor layer 14b, the second p-type semiconductor layer 14b has a deep ultraviolet radiated from the active region 13. It may have a band gap energy larger than that of the light 19.

  The n-type electrode 15 is in contact with the n-type semiconductor layer 12. The n-type electrode 15 may be provided on the exposed surface of the n-type semiconductor layer 12. The exposed surface of the n-type semiconductor layer 12 is formed by laminating the n-type semiconductor layer 12, the active region 13, and the p-type semiconductor layer 14 on the substrate 11, and then a part of the n-type semiconductor layer 12, the active region 13, , The surface of the n-type semiconductor layer 12 exposed by partially removing the p-type semiconductor layer 14. The semiconductor light emitting element 10 may have a mesa structure in which a part of the n-type semiconductor layer 12, a part of the active region 13, and a part of the p-type semiconductor layer 14 are removed. The p-type electrode 16 is provided on the surface 18 a of the semiconductor layer 18 on the side opposite to the substrate 11. The p-type electrode 16 is in contact with the p-type semiconductor layer 14. Specifically, the p-type electrode 16 is in contact with the second p-type semiconductor layer 14b that functions as a p-type contact layer. In the first plan view of the first main surface 11a, the p-type electrode 16 may have a comb shape.

  The periodic concavo-convex structure 17 is formed on the second main surface 11 b of the substrate 11. The periodic concavo-convex structure 17 prevents the deep ultraviolet light 19 emitted from the active region 13 from being totally reflected by the second main surface 11 b of the substrate 11, thereby extracting the deep ultraviolet light 19 from the semiconductor light emitting device 10. Increase efficiency.

The periodic concavo-convex structure 17 includes a plurality of protrusions 17a protruding from the second main surface 11b. In the present embodiment, each of the plurality of protrusions 17a has a conical shape. Each of the plurality of protrusions 17a may have a pyramid shape. Each of the plurality of protrusions 17a may have a cylindrical or polygonal column shape. The plurality of protrusions 17a may each have an aspect ratio h ₁ / d ₁ greater than 0.6, may have an aspect ratio h ₁ / d ₁ greater than 0.8, and 1.0 may have an aspect ratio h ₁ / d ₁ above, it may have 1.5 or more the aspect ratio h ₁ / d _1. Each of the plurality of protrusions 17 a is not particularly limited, but may have an aspect ratio h ₁ / d ₁ of 10 or less in consideration of the productivity of the substrate 11 including the periodic uneven structure 17. A plurality of projections 17a, respectively, may have an aspect ratio h ₁ / d ₁ of 10 or less may have an aspect ratio h ₁ / d ₁ of 5 or less, 3 or less of the aspect ratio h ₁ / D ₁ may be included.

In this specification, the aspect ratio h ₁ / d ₁ of each of the plurality of protrusions 17 a is equal to the height h ₁ of each of the plurality of protrusions 17 a with respect to the width (diameter) d ₁ of each of the plurality of protrusions 17 a. It is given by the ratio h ₁ / d ₁ . The height h ₁ of each of the plurality of protrusions 17a is the length of each of the plurality of protrusions 17a measured in the direction perpendicular to the second main surface 11b from the second main surface 11b. The width (diameter) d ₁ of each of the plurality of protrusions 17 a is the length of the bottom of each of the plurality of protrusions 17 a in the direction parallel to the second main surface 11 b of the substrate 11.

The height h ₁ of each of the plurality of protrusions 17a may be greater than 150 nm, 350 nm or more, or 500 nm or more. The periodic uneven structure 17 may have a nano-sized periodic structure. The periodic uneven structure 17 may have a period p smaller than 1 μm, may have a period p of 800 nm or less, and may have a period p of 600 nm or less.

  The third area of the plurality of protrusions 17a in the second plan view of the second main surface 11b with respect to the second area of the second main surface 11b in the second plan view of the second main surface 11b The ratio may be 60% or more, 80% or more, or 90% or more. The third area of the plurality of protrusions 17a in the second plan view of the second main surface 11b with respect to the second area of the second main surface 11b in the second plan view of the second main surface 11b The ratio may be 100% or less, 98% or less, or 95% or less. In the present specification, the second area is given as an area of a region surrounded by the outer periphery of the second main surface 11b when the second main surface 11b is viewed in a second plane. In the present specification, the third area is given as the total area of the bottoms of the plurality of protrusions 17a in contact with the second main surface 11b when the second main surface 11b is viewed in the second plan view.

  A method for manufacturing the semiconductor light emitting device 10 of the present embodiment will be described with reference to FIGS. 3 and 6 to 14.

With reference to FIGS. 6 and 7, the method for manufacturing the semiconductor light emitting device 10 of the present embodiment includes forming the semiconductor layer 18 including the active region 13 on the first main surface 11 a of the substrate 11. (S1). The active region 13 is configured to emit deep ultraviolet light 19. The first area of the active region 13 in the second plan view of the second main surface 11b of the substrate 11 opposite to the first main surface 11a is 0.15 mm ² or more. Forming the semiconductor layer 18 (S1) may include a step of depositing the n-type semiconductor layer 12, the active region 13, and the p-type semiconductor layer 14 in this order on the first main surface 11a of the substrate 11. The methods for depositing the semiconductor layer 18 include metal organic chemical vapor deposition (MOCVD), metal organic chemical vapor deposition (MOVPE), molecular beam epitaxy (MBE), and hydride vapor deposition (HVPE). Also good. Forming the semiconductor layer 18 (S 1) may include forming a mesa structure in the semiconductor layer 18 by etching a part of the semiconductor layer 18 including the active region 13. Specifically, a part of the n-type semiconductor layer 12, a part of the active region 13, and a part of the p-type semiconductor layer 14 may be etched. By this etching, a part of the surface of the n-type semiconductor layer 12 is exposed.

  6 and 7, the method for manufacturing the semiconductor light emitting device 10 of the present embodiment includes forming the n-type electrode 15 on the n-type semiconductor layer 12 (S2). Specifically, the n-type electrode 15 may be formed on the n-type semiconductor layer 12 exposed by etching for forming a mesa structure in the semiconductor layer 18. The n-type electrode 15 may be formed on the n-type semiconductor layer 12 by, for example, a vacuum deposition method. In order to improve the electrical contact between the n-type semiconductor layer 12 and the n-type electrode 15, forming the n-type electrode 15 (S2) is performed at a temperature of 300 ° C. or higher and 1100 ° C. or lower for 30 seconds or longer 3 It may include annealing the n-type electrode 15 and the n-type semiconductor layer 12 for a time equal to or less than a minute.

  6 and 7, in the method of manufacturing semiconductor light emitting device 10 of the present embodiment, p-type electrode 16 is formed on surface 18a of semiconductor layer 18 on the side opposite to substrate 11 (S3). ). The p-type electrode 16 is formed on the p-type semiconductor layer 14. Specifically, the p-type electrode 16 may be formed on the surface of the second p-type semiconductor layer 14b that functions as a p-type contact layer. The p-type electrode 16 may be formed on the p-type semiconductor layer 14 by, for example, a vacuum deposition method. In order to improve the electrical contact between the p-type semiconductor layer 14 and the p-type electrode 16, the p-type electrode 16 is formed (S3) at a temperature of 200 ° C. or higher and 800 ° C. or lower for 30 seconds or longer 3 It is preferable to anneal the p-type electrode 16 and the p-type semiconductor layer 14 for a time of less than a minute.

  With reference to FIGS. 3, 6, and 8 to 14, in the method of manufacturing the semiconductor light emitting device 10 of the present embodiment, the periodic uneven structure 17 is formed on the second main surface 11 b of the substrate 11 ( S4). The periodic concavo-convex structure 17 includes a plurality of protrusions 17a protruding from the second main surface 11b. The third area of the plurality of protrusions 17a in the second plan view of the second main surface 11b with respect to the second area of the second main surface 11b in the second plan view of the second main surface 11b The ratio is 60% or more and 100% or less. Each of the plurality of protrusions 17a has an aspect ratio of 0.6 or more. With reference to FIGS. 3, 6, and 8 to 14, the periodic uneven structure 17 is formed by a nanoimprint lithography (NIL) method and an anisotropic etching method as described in detail below. . Therefore, the periodic uneven structure 17 can be formed with high throughput, high accuracy, and low cost over a wide region of 60% or more of the second area of the second main surface 11b.

  Referring to FIG. 8, the formation of the periodic concavo-convex structure 17 means that the first layer 41, the second layer 42, and the third layer 43 are arranged in this order on the second main surface 11 b. Including laminating. The first layer 41, the second layer 42, and the third layer 43 are made of different materials. The first layer 41 has a larger thickness than each of the second layer 42 and the third layer 43. Before forming the first layer 41, the second main surface 11b of the substrate 11 may be subjected to a hydrophobic treatment with hexamethyldisilazane (HMDS) or the like.

  The first layer 41 is formed on the second main surface 11 b of the substrate 11. The first layer 41 may include a first resin material. For example, the first resin material may be a resist (ZEP520A, manufactured by Nippon Zeon Co., Ltd.). The first layer 41 may be formed by spin-coating a first material containing a first resin material on the second main surface 11b of the substrate 11, and then baking at 150 ° C. or higher for 30 minutes. Good. The first layer 41 has a greater thickness than each of the second layer 42 and the third layer 43. The first layer 41 may have a thickness greater than 400 nm. Further, the first layer 41 is not particularly limited, but may have a thickness of 10 μm or less in consideration of the workability of the first layer 41 and the like. The first layer 41 may have a multilayer structure (not shown). The outermost layer of this multilayer structure may be a layer that improves the wettability of the second material constituting the second layer 42. The outermost layer of this multilayer structure may be a polymethyl methacrylate resin (PMMA) layer. The outermost layer of this multilayer structure may have a thickness of 5 nm or more, for example, and may have a thickness of 50 nm or less. The first layer 41 may be made of a material that is soluble in a polar solvent such as acetone or N-methylpyrrolidone.

  The second layer 42 is formed on the first layer 41. The second layer 42 may be composed of a second material including an inorganic material such as silicon oxide. The second material constituting the second layer 42 is different from the first material constituting the first layer 41. The second layer 42 may have a multilayer structure (not shown). The second layer 42 may be formed by spin coating a second material onto the first layer 41 and then baking at 80 ° C. or higher for 30 minutes. When the second layer 42 is formed by spin coating, it is preferable that the first layer 41 is not dissolved by a solvent or the like included in the spin coating material used for forming the second layer 42. The second layer 42 may be a spin on glass (SOG) layer. For example, the second layer 42 may have a thickness of 10 nm or more, and may have a thickness of 100 nm or less. In order to improve the wettability of the third layer 43 with respect to the second layer 42, the surface of the second layer 42 is hydrophobized with hexamethyldisilazane (HMDS) or the like. An intermediate layer (not shown) made of resist (ZEP520A, manufactured by Nippon Zeon Co., Ltd.) or the like may be formed on the surface. For example, the intermediate layer may have a thickness of 5 nm or more, and may have a thickness of 50 nm or less.

  The third layer 43 is formed on the second layer 42. The third layer 43 may be formed on an intermediate layer (not shown). The third layer 43 may be made of a third material including a second resin material. The third layer 43 may have a multilayer structure (not shown). The third material constituting the third layer 43 is different from the first material constituting the first layer 41 and the second material constituting the second layer 42. The first layer 41, the second layer 42, and the third layer 43 are made of different materials. The second resin material may include, for example, a photocurable resin including an ultraviolet curable resin. For example, the second resin material may be a resist (MUR-XR, manufactured by Maruzen Petrochemical Co., Ltd.). The third layer 43 may be formed by spin-coating a third material containing a second resin material on the second layer 42 and then baking. When the third layer 43 is formed by spin coating, it is preferable that the second layer 42 is not dissolved by a solvent or the like contained in the spin coating material used for forming the third layer 43. The thickness of the third layer 43 is appropriately determined according to the uneven pattern of the mold 45 (see FIG. 9). For example, the third layer 43 may have a thickness of 20 nm or more, and may have a thickness of 300 nm or less.

  With reference to FIGS. 9 and 10, the formation of the periodic concavo-convex structure 17 is achieved by imprinting the mold 45 having the concavo-convex pattern on the third layer 43, so that a plurality of first layers are formed on the third layer 43. Forming the recess 43a. The mold 45 includes an uneven pattern having a nano size. The concavo-convex pattern may have a structure in which, for example, concave portions having a diameter of 280 nm to 320 nm and a depth of 280 nm to 300 nm are arranged in a regular triangular lattice with a period of 600 nm. The mold 45 is not particularly limited, but may be made of silicon (Si).

  Referring to FIG. 9, a plurality of first recesses 43 a are formed in the third layer 43 by imprinting a mold 45 having an uneven pattern on the third layer 43. Specifically, a mold 45 having an uneven pattern is imprinted on the third layer 43. The second resin material contained in the third layer 43 is cured while imprinting the mold 45 on the third layer 43. When the second resin material is a photocurable resin containing an ultraviolet curable resin, the second resin contained in the third layer 43 is irradiated with light 46 containing ultraviolet rays on the third layer 43. The material is cured.

  Referring to FIG. 10, mold 45 is peeled off from third layer 43. In this way, a plurality of first recesses 43 a can be formed in the third layer 43. When forming the plurality of first recesses 43a, the remaining film 43b may be present at the bottom of the plurality of first recesses 43a. After imprinting the mold 45 on the third layer 43, that is, after the mold 45 is peeled off from the third layer 43, the third layer 43 is irradiated with light or the like and included in the third layer 43. The second resin material may be cured.

  Referring to FIG. 11, the formation of the periodic concavo-convex structure 17 uses a third layer 43 in which a plurality of first recesses 43 a is formed, and a plurality of second recesses 42 a are formed in the second layer 42. Forming. Forming the plurality of second recesses 42a in the second layer 42 is etching part of the second layer 42 corresponding to the plurality of first recesses 43a using the third layer 43 as a mask. May be included. The etching of a part of the second layer 42 may be dry etching. The partial etching of the second layer 42 may be inductively coupled plasma (ICP) etching using a first etching gas such as a fluorine-based etching gas. For example, an ICP etching apparatus having an antenna electrode having an output of 200 W to 600 W, a bias electrode having an output of 10 W to 400 W, and a chamber having a pressure of 0.1 Pa to 1.0 Pa is used. A plurality of second recesses 42 a may be formed in the second layer 42 by etching a part of the second layer 42 for not less than 5 minutes and not more than 5 minutes.

  Etching a part of the second layer 42 to form the plurality of second recesses 42a means that part of the third layer 43 (residual film 43b) remaining at the bottom of the plurality of first recesses 43a. ) May be removed. That is, when a part of the second layer 42 is etched to form the plurality of second recesses 42a, the third layer 43 (residual film 43b) remaining at the bottom of the plurality of first recesses 43a is further removed. May be. In the etching of a part of the second layer 42 for forming the plurality of second recesses 42a, the first layer 41 may have an etching rate smaller than that of the second layer 42. When a part of the second layer 42 is etched to form the plurality of second recesses 42a, the first layer 41 may function as an etching stop layer.

  Referring to FIG. 12, the formation of the periodic concavo-convex structure 17 means that a part of the first layer 41 is anisotropic using the second layer 42 in which a plurality of second concave portions 42a are formed as a mask. Forming a plurality of third recesses 41a in the first layer 41 by performing reactive etching. In the plurality of third recesses 41a, the second main surface 11b of the substrate 11 is exposed.

  In the anisotropic etching of a part of the first layer 41, the etching rate of the first layer 41 may be 10 times or more the etching rate of the second layer 42. In the anisotropic etching of a part of the first layer 41, the etching rate of the first layer 41 may be 50 times or more the etching rate of the second layer 42. In the anisotropic etching of a part of the first layer 41, the etching rate of the first layer 41 may be 100 times or more the etching rate of the second layer 42.

  When a part of the first layer 41 is anisotropically etched, the etching is mainly performed in a direction perpendicular to the second main surface 11b of the substrate 11, but in a direction parallel to the second main surface 11b of the substrate 11. The first layer 41 is hardly etched. Therefore, even if the first layer 41 has a larger thickness than each of the second layer 42 and the third layer 43, a plurality of third recesses 41a having a large aspect ratio can be formed. A third concave portion 41 a having an aspect ratio larger than the aspect ratio of the first concave portion 43 a and the aspect ratio of the convex portion of the mold 45 can be formed. The aspect ratio of the third recess 41a is given as the ratio of the width (diameter) of the third recess 41a to the height of the third recess 41a. The height of the third recess 41a is the length of the third recess 41a measured in the direction perpendicular to the second main surface 11b from the second main surface 11b. The width (diameter) of the third recess 41 a is the length of the third recess 41 a in the direction parallel to the second main surface 11 b of the substrate 11. When the part of the first layer 41 is anisotropically etched, the third layer 43 remaining on the second layer 42 may also be removed.

  The anisotropic etching of a part of the first layer 41 may be dry etching. The anisotropic etching of a part of the first layer 41 may be inductively coupled plasma (ICP) etching using a second etching gas containing oxygen and argon. The second etching gas may be different from the first etching gas. For example, using an ICP etching apparatus having an antenna electrode having an output of 200 W to 600 W, a bias electrode having an output of 10 W to 100 W, and a chamber having a pressure of 0.1 Pa to 1.0 Pa, 10 A plurality of third recesses 41 a may be formed in the first layer 41 by anisotropically etching a part of the first layer 41 for not less than 70 minutes and not more than 70 minutes. The step of forming a plurality of second recesses 42a in the second layer 42 shown in FIG. 11 and the step of forming the plurality of third recesses 41a in the first layer 41 shown in FIG. Two ICP etching apparatuses may be used. By performing the two steps shown in FIGS. 11 and 12 using one ICP etching apparatus, the substrate 11 including the periodic concavo-convex structure 17 can be manufactured with high throughput.

  Referring to FIG. 13, the formation of the periodic concavo-convex structure 17 is performed on the second main surface 11 b and the second layer 42 of the substrate 11 exposed in the plurality of third recesses 41 a. Forming a layer 47. The fourth layer 47 may include a first portion 47 a formed in the plurality of third recesses 41 a and a second portion 47 b formed on the first layer 41. The etching rate of the fourth layer 47 may be 1.5 times or less, 1.0 times or less, or 0.8 times or less of the etching rate of the substrate 11. The fourth layer 47 may be a nickel (Ni) layer. The fourth layer 47 is not particularly limited, but may be formed using a vacuum deposition method.

  Referring to FIG. 14, the formation of the periodic concavo-convex structure 17 includes a plurality of columnar shapes on the second main surface 11b by lifting off the first layer 41 formed with the plurality of third recesses 41a. Forming the structure 48. The plurality of columnar structures 48 correspond to the first portion 47 a (see FIG. 13) of the fourth layer 47. For example, the first layer 41 having the plurality of third recesses 41a and the substrate 11 are immersed in acetone having a temperature of 40 ° C. or higher, and ultrasonic waves having a frequency of 100 kHz are applied to the substrate 11 to thereby perform the first. The layer 41 may be lifted off from the substrate 11.

  In the present embodiment, each of the plurality of columnar structures 48 has a conical shape. Each of the plurality of columnar structures 48 may have a shape of a polygonal pyramid, a cylinder, or a polygonal column. Each of the plurality of columnar structures 48 may have an aspect ratio greater than 0.6, may have an aspect ratio greater than 0.8, and may have an aspect ratio of 1.0 or greater. It may have an aspect ratio of 1.5 or more. In consideration of the productivity of the substrate 11 including the periodic concavo-convex structure 17, each of the plurality of columnar structures 48 may have an aspect ratio of 10 or less, and may have an aspect ratio of 5 or less. It may have an aspect ratio of 3 or less. The aspect ratio of the columnar structure 48 is given as the ratio of the width (diameter) of the columnar structure 48 to the height of the columnar structure 48. The height of each of the plurality of columnar structures 48 is the length of each of the plurality of columnar structures 48 measured in the direction perpendicular to the second main surface 11b from the second main surface 11b. The width (diameter) of each of the plurality of columnar structures 48 is the length of the bottom of each of the plurality of columnar structures 48 in the direction parallel to the second main surface 11 b of the substrate 11. The plurality of columnar structures 48 may be nanocolumnar structures having a period smaller than 1 μm.

  The formation of the periodic concavo-convex structure 17 means that the periodic concavo-convex structure 17 (see FIG. 10) is formed on the second main surface 11b of the substrate 11 by etching the second main surface 11b using a plurality of columnar structures 48. 3). Forming the periodic concavo-convex structure 17 on the second main surface 11b of the substrate 11 may include etching the second main surface 11b using the plurality of columnar structures 48 as a mask. When etching the second main surface 11 b of the substrate 11, at least a part of the plurality of columnar structures 48 may be etched together with the second main surface 11 b of the substrate 11. By this etching of the second main surface 11b of the substrate 11, the pattern of the plurality of columnar structures 48 is transferred to the second main surface 11b of the substrate 11, and the periodic uneven structure 17 is formed on the second main surface 11b. It is formed. The etch rate of the plurality of columnar structures 48 may be 1.5 times or less, 1.0 times or less, or 0.8 times or less of the etch rate of the substrate 11. . Therefore, the periodic concavo-convex structure 17 having a high aspect ratio can be formed on the second main surface 11 b of the substrate 11 using the plurality of columnar structures 48 having a high aspect ratio. The plurality of columnar structures 48 may mainly contain nickel (Ni).

The second main surface 11b of the substrate 11 may be etched by, for example, an inductively coupled plasma (ICP) etching method. The etching gas may be a fluorine-based gas such as trifluoromethane (CHF ₃ ) gas. For example, using an ICP etching apparatus having an antenna electrode having an output of 200 W or more and 600 W or less, a bias electrode having an output of 100 W or more and 400 W or less, and a chamber having a pressure of 0.1 Pa or more and 1.0 Pa or less, The periodic concavo-convex structure 17 may be formed on the second main surface 11b of the substrate 11 by etching the second main surface 11b. Subsequently, residues of the plurality of columnar structures 48 may be removed. For example, the residue of the plurality of columnar structures 48 is removed by immersing the substrate 11 on which the periodic uneven structure 17 is formed in concentrated hydrochloric acid having a temperature of 30 ° C. or more and 100 ° C. or less for 1 minute or more and 40 minutes or less. May be.

  Through the above steps, the semiconductor light emitting device 10 including the substrate 11 including the periodic uneven structure 17 shown in FIG. 3 can be manufactured. In the method for manufacturing the semiconductor light emitting device 10 according to the present embodiment, the semiconductor layer 18 including the active region 13 is formed on the first main surface 11a of the substrate 11 and then periodically formed on the second main surface 11b of the substrate 11. Although the concavo-convex structure 17 is formed, the periodic concavo-convex structure 17 is formed on the second main surface 11 b of the substrate 11 before the semiconductor layer 18 including the active region 13 is formed on the first main surface 11 a of the substrate 11. May be formed.

  The package (30, 60) includes a base 30 and a transparent member 60 that is transparent to the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. The package (30, 60) may further include a submount 20, an insulating layer 35, conductive pads 36, 38, electrical wirings 37, 39, and conductive wires 33, 34.

  The transparent member 60 may be provided on the base 30 so as to cover the semiconductor light emitting element 10. The base 30 and the transparent member 60 may be joined by an adhesive or the like. Specifically, the transparent member 60 may be provided on the insulating layer 35 so as to cover the semiconductor light emitting element 10. The insulating layer 35 and the transparent member 60 may be joined by an adhesive 64 or the like.

  The transparent member 60 is transparent to the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. In this specification, that the transparent member 60 is transparent to the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10 means that the transparent member 60 is in the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. It means having a transmittance of 60% or more. The transparent member 60 may have a transmittance of 75% or more at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. The transparent member 60 may have a transmittance of 90% or more at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10.

  The transmittance of the transparent member 60 increases as the transmittance of the transparent member 60 per unit length increases, and decreases as the transparent member 60 increases in thickness. The transparent member 60 may have a low light absorption rate and a high light transmittance with respect to the deep ultraviolet light 19 having a wavelength of 190 nm or more and 350 nm or less. The transparent member 60 may have a low light absorption rate and a high light transmittance with respect to the deep ultraviolet light 19 having a wavelength of 200 nm or more and 320 nm or less. The transparent member 60 may have a low light absorption rate and a high light transmittance with respect to the deep ultraviolet light 19 having a wavelength of 220 nm or more and 300 nm or less. The transparent member 60 may be made of a material having a transmittance of 80% or more per 100 μm path length at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. The transparent member 60 may be made of a material having a transmittance of 90% or more per 100 μm path length at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. The transparent member 60 may be made of a material having a transmittance of 95% or more per 100 μm path length at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10.

  The transparent member 60 may have an opening on one side and a shape that bulges outward. The transparent member 60 has a space inside. The transparent member 60 may be a cap. In the present specification, the cap means a shell having an opening on one side and a space inside. In the present embodiment, the transparent member 60 as a cap may have a hemispherical shell shape having an opening on one side and a space on the inside. By configuring the transparent member 60 with a cap having the shape of a hemispherical shell, the incident angle of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10 to the transparent member 60 can be made closer to the vertical, and the deep ultraviolet light 19 Therefore, the reflectance of the transparent member 60 can be reduced.

  The transparent member 60 may be made of an inorganic compound such as synthetic quartz, quartz glass, non-alkali glass, sapphire, or fluorite (CaF) or a resin. Table 1 shows an example of transmittance per 100 μm path length (thickness) at a wavelength of 265 nm for some of the materials that can be used for the transparent member 60.

  Examples of resins that can be used for the transparent member 60 include silicone resins having no aromatic ring, amorphous fluorine-containing resins, polyimides, epoxy resins, polyolefins, acrylic resins such as polymethyl methacrylate, polycarbonates, polyesters, polyurethanes, Examples of the resin include a polysulfone resin, polysilane, polyvinyl ether, and an inorganic compound.

  As a silicone resin having no aromatic ring, polydimethylsiloxane JCR6122 (Toray Dow Corning), JCR6140 (Toray Dow Corning), HE59 (Nihon Yamamura Glass), HE60 (Nihon Yamamura Glass), HE61 ( Nippon Yamamura Glass Co., Ltd.), KER2910 (manufactured by Shin-Etsu Chemical Co., Ltd.), and fluorine-containing organopolysiloxane FER7061 (manufactured by Shin-Etsu Chemical Co., Ltd.).

  As an amorphous fluorine-containing resin, perfluoro (4-vinyloxy-1-butene) polymer (Cytop (registered trademark), manufactured by Asahi Glass), 2,2-bistrifluoromethyl-4,5-difluoro-1,3 -A dioxole polymer (Teflon (registered trademark) AF, manufactured by DuPont) can be exemplified.

  As the polyimide, a polyimide in which an aromatic compound is substituted with an alicyclic compound is preferable. Examples of the alicyclic polyimide include a reaction product of an alicyclic acid dianhydride and an alicyclic diamine. As an alicyclic acid dianhydride, bicyclo [2.2.1] hept-2-endo, 3-endo, 5-exo, 6-exo-tetracarboxylic acid-2, 3: 5,6-dianhydride , Bicyclo [2.2.1] hept-2-exo, 3-exo, 5-exo, 6-exo-tetracarboxylic acid-2,3: 5,6-dianhydride, bicyclo [2.2.2 ] Octa-2-endo, 3-endo, 5-exo, 6-exo-tetracarboxylic acid 2,3: 5,6-dianhydride, bicyclo [2.2.2] oct-2-exo, 3- exo, 5-exo, 6-exo-tetracarboxylic acid 2,3: 5,6-dianhydride, (4arH, 8acH) -decahydro-1t, 4t: 5c, 8c-dimethananaphthalene 2c, 3c, 6c, 7c-tetracarboxylic acid-2,3: 6,7-dianhydride can be exemplified. Examples of the alicyclic diamine include bis (aminomethylbicyclo [2.2.1] heptane.

  As the epoxy resin, an epoxy resin in which the aromatic ring is changed to an alicyclic compound is preferable. As an epoxy resin in which the aromatic ring is changed to an alicyclic compound, 3 ′, 4′-epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate (Celoxide 2021P, manufactured by Daicel), ε-caprolactone-modified 3 ′, 4 ′ -Epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate (Celoxide 2081, manufactured by Daicel) and 1,2-epoxy-4-vinylcyclohexane (Celoxide 2000, manufactured by Daicel) can be exemplified.

  As polyolefins, polymers of chain olefins such as polyethylene, polypropylene and methylpentene, polymers of cyclic olefins such as norbornene, TPX (made by Mitsui Chemicals), APEL (made by Mitsui Chemicals), ARTON (made by JSR), ZEONOR (Japan) Examples include Zeon), ZEONEX (Nippon Zeon), and TOPAS (Polyplastics).

  Resins with inorganic compounds added include magnesium oxide, zirconium oxide, hofnium oxide, α-aluminum oxide, γ-aluminum oxide, aluminum nitride, calcium fluoride, lutetium aluminum garnet, silicon dioxide, magnesium aluminate, sapphire, diamond, etc. The thing which added this inorganic compound to said resin can be illustrated.

  The semiconductor light emitting device 10 is covered with a fluid (62). The fluid (62) may be an inert gas such as air, nitrogen gas or noble gas, or may be a liquid 62. The fluid (62) is filled in the space inside the package (30, 60). Specifically, the liquid 62 may be filled into a space inside the package (30, 60). The liquid 62 is filled in the space between the base 30 and the transparent member 60. The liquid 62 seals the semiconductor light emitting element 10. The liquid 62 may seal at least the emission surface of the semiconductor light emitting element 10 (the second main surface 11b of the substrate 11).

  The liquid 62 is transparent to the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. In the present specification, the fact that the liquid 62 is transparent to the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10 means that the liquid 62 is 60 at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. % Transmittance is meant. The liquid 62 may have a transmittance of 75% or more at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10. The liquid 62 may have a transmittance of 90% or more at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10.

  The transmittance of the liquid 62 increases as the transmittance of the liquid 62 per unit length increases, and decreases as the liquid 62 increases in thickness. The liquid 62 has a low light absorption rate and a high light transmittance with respect to the deep ultraviolet light 19 having a wavelength of 190 nm or more and 350 nm or less. The liquid 62 may have a low light absorption rate and a high light transmittance with respect to the deep ultraviolet light 19 having a wavelength of 220 nm or more and 300 nm or less. The liquid 62 has a transmittance of 80% or more, preferably 90% or more, more preferably 95% or more per 100 μm path length (thickness) at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10. You may be comprised from material. The liquid 62 may be made of a material having a transmittance of 90% or more per 100 μm path length (thickness) at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. The liquid 62 may be made of a material having a transmittance of 95% or more per 100 μm path length (thickness) at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10.

  The liquid 62 may be composed of any one of pure water, a liquid organic compound, a salt solution, and a fine particle dispersion. Tables 2 to 10 show an example of transmittance per path length (thickness) of 100 μm at a wavelength of 193 nm, 248 nm, 265 nm, or 300 nm, and 193 nm, 248 nm for some of the materials that can be used for the liquid 62. An example of a refractive index at a wavelength of 265 nm or 300 nm is shown.

  Table 2 shows the transmittance per path length (thickness) of 100 μm and the refractive index at wavelengths of 193 nm, 248 nm, and 265 nm in pure water at wavelengths of 193 nm, 248 nm, and 265 nm.

  The liquid organic compound may be composed of any one of a saturated hydrocarbon compound, an organic solvent having no aromatic ring, an organic halide, a silicone resin, and a silicone oil. Tables 3 to 6 show an example of transmittance per path length (thickness) of 100 μm at a wavelength of 193 nm, 248 nm, or 265 nm for a part of the liquid organic compound material that can be used for the liquid 62, and 193 nm. An example of a refractive index at a wavelength of 248 nm or 265 nm is shown.

  Table 3 shows the transmittance per 100 μm path length (thickness) at a wavelength of 193 nm or 265 nm and a refractive index at a wavelength of 193 nm or 265 nm for some of the saturated hydrocarbon compounds that can be used in the liquid 62. Indicates.

Examples of the saturated hydrocarbon compound include a chain saturated hydrocarbon compound and a cyclic saturated hydrocarbon compound. Examples of chain saturated hydrocarbon compounds include n-pentane, n-hexane, n-heptane, n-octane, n-nonane, n-decane, n-undecane, n-dodecane, n-tridecane, n-tetradecane, n- Examples include pentadecane, n-hexadecane, n-heptadecane, n-octadecane, 2,2-dimethylbutane, and 2-methylpentane. Cyclic pentane, cyclohexane, cycloheptane, cyclooctane, cyclononane, cyclodecane, methylcyclohexane, ethylcyclohexane, propylcyclohexane, butylcyclohexane, methyl cubane, methyldinorbornene, octahydroindene, 2-ethyl Norbornene, 1,1′-bicyclohexyl, trans-decahydronaphthalene, cis-decahydronaphthalene, exo-tetrahydrodicyclopentadiene, tricyclo [6.2.1.0 ^2,7 ] undecane, perhydrofluorene, 3-methyltetracyclo [ 4.4.0.1 ^2,5 .1 ^7,10] dodecane, 1,3-dimethyl adamantane, perhydro-phenanthrene, can be exemplified perhydro pyrene. As saturated hydrocarbon compounds, IF131 (DuPont), IF132 (DuPont), IF138 (DuPont), IF169 (DuPont), HIL-001 (JSR), HIL-002 (JSR), HIL-203 ( Further examples include JSR), HIL-204 (JSR), Delphi (Mitsui Chemicals), and Babylon (Mitsui Chemicals).

  Table 4 shows the transmittance per path length (thickness) of 100 μm at a wavelength of 193 nm, 248 nm, or 265 nm, and 193 nm, 248 nm for some organic solvents that do not have an aromatic ring that can be used for the liquid 62. Or the refractive index at a wavelength of 265 nm.

  As an organic solvent having no aromatic ring, a compound having a hydroxyl group, a compound having a carbonyl group, a compound having a sulfinyl group, a compound having an ether bond, a compound having a nitrile group, a compound having an amino group, and A sulfur compound can be illustrated. Examples of the compound having a hydroxyl group include isopropanol, isobutanol, glycerol, methanol, ethanol, propanol and butanol. Examples of compounds having a carbonyl group include N-methylpyrrolidone, N, N-dimethylformamide, acetone, methyl ethyl ketone, diethyl ketone, cyclohexanone, cyclopentanone, methyl methacrylate, methyl acrylate, and n-butyl acrylate. it can. An example of a compound having a sulfinyl group is dimethyl sulfoxide. Examples of the compound having an ether bond include tetrahydrofuran and 1,8-cineol. Acetonitrile can be illustrated as a compound which has a nitrile group. Examples of the compound having an amino group include triethylamine and formamide. Examples of the sulfur-containing compound include carbon disulfide.

  Table 5 shows the transmittance per path length (thickness) of 100 μm at a wavelength of 265 nm and the refractive index at a wavelength of 265 nm for some of the organic halides that can be used for the liquid 62.

  Examples of organic halides include fluorine compounds, chlorine compounds, bromine compounds, and iodine compounds. Perfluoro (4-vinyloxy-1-butene) polymer (Cytop) (registered trademark), 2,2-bistrifluoromethyl-4,5-difluoro-1,3-dioxole polymer (Teflon (registered trademark)) (Trademark) AF, manufactured by DuPont). As chlorine compounds, dichloromethane, dichloroethane, trichloroethane, tetrachloroethane, pentachloroethane, chloropropane, dichloropropane, trichloropropane, tetrachloropropane, pentachloropropane, hexachloropropane, chlorohexanol, trichloroacetyl chloride, carbon tetrachloride, chloroacetone, 1-chlorobutane Chlorocyclohexane, chloroform, chloroethanol, chlorohexane, chlorohexanone, epichlorohydrin. Examples of bromine compounds include bromoethane, bromoethanol, dibromomethane, dibromoethane, dibromopropane, bromoform, tribromoethane, tribromopropane, tetrabromoethane, and 1-bromopropane. Examples of iodine compounds include iodine compounds such as methyl iodide, ethyl iodide, propyl iodide, diiodomethane, and diiodopropane.

  Table 6 shows a transmittance per 100 μm path length (thickness) at a wavelength of 265 nm and a refractive index at a wavelength of 265 nm for a part of the silicone resin or silicone oil that can be used for the liquid 62.

  Silicone resins or silicone oils have organopolysiloxane as the main chain, and organic groups are bonded to Si atoms. As an organic group, a functional group containing a carbon atom, a functional group containing a fluorine atom, a functional group containing a chlorine atom, a functional group containing a bromine atom, a functional group containing an iodine atom, a functional group containing a nitrogen atom, or an oxygen atom Examples of the functional group include one or more of a functional group and a functional group containing a sulfur atom. Examples of the functional group containing a carbon atom include a methyl group, an ethyl group, and a propyl group. Examples of the functional group containing a fluorine atom include a trifluoromethyl group, a trifluoroethyl group, and a trifluoropropyl group. Examples of the functional group containing a chlorine atom include a trichloromethyl group, a trichloroethyl group, and a trichloropropyl group. Examples of the functional group containing a bromine atom include a tribromomethyl group, a tribromoethyl group, and a tribromopropyl group. Examples of the functional group containing an iodine atom include a triiodomethyl group, a triiodoethyl group, and a triiodopropyl group. Examples of functional groups containing nitrogen atoms include amino groups, nitrile groups, isocyanate groups, and ureido groups. Examples of the functional group containing an oxygen atom include an epoxy group, a methacryl group, and an ether group. Examples of the functional group containing a sulfur atom include a mercapto group and a sulfinyl group. As silicone resin or silicone oil, JCR6122 (Toray Dow Corning), JCR6140 (Toray Dow Corning), HE59 (Nihon Yamamura Glass), HE60 (Nihon Yamamura Glass), HE61 (Nihon Yamamura Glass), Further examples include KER2910 (manufactured by Shin-Etsu Chemical Co., Ltd.) and FER7061 (manufactured by Shin-Etsu Chemical Co., Ltd.). These materials include materials that can be cured by irradiation with light other than the deep ultraviolet light 19 or by heating, but in this embodiment, these materials are not subjected to curing treatment and are liquid. The liquid in the state is used as the liquid 62.

  The salt solution may be composed of any of an acid solution, an inorganic salt solution, and an organic salt solution. Tables 7 to 9 show an example of transmittance per 100 μm path length (thickness) at a wavelength of 193 nm or 248 nm, and 193 nm or 248 nm for some of the salt solutions that can be used for the liquid 62. An example of the refractive index in a wavelength is shown.

  Table 7 shows the transmittance per 100 μm path length (thickness) at a wavelength of 193 nm or 248 nm and the refractive index at a wavelength of 193 nm or 248 nm for a part of the acid solution that can be used for the liquid 62. Indicates.

  As acids, phosphoric acid, sulfuric acid, hydrochloric acid, hydrobromic acid, nitric acid, citric acid, methanesulfonic acid, methacrylic acid, butyric acid, isobutyric acid, caproic acid, caprylic acid, lauric acid, palmitic acid, stearic acid, oleic acid It can be illustrated.

  Table 8 shows the transmittance per 100 μm path length (thickness) at a wavelength of 193 nm and the refractive index at a wavelength of 193 nm for a part of the inorganic salt solution that can be used for the liquid 62.

  As inorganic salts, sodium chloride, potassium chloride, cesium chloride, ammonium chloride, calcium chloride, lithium chloride, rubidium chloride, tetramethylammonium chloride, aluminum chloride hexahydrate, sodium bromide, zinc bromide, lithium bromide, odor Potassium bromide, rubidium bromide, cesium bromide, ammonium bromide, lithium sulfate, sodium sulfate, potassium sulfate, rubidium sulfate, cesium sulfate, magnesium sulfate, gadolinium sulfate, zinc sulfate, alum, ammonium alum, sodium hydrogen sulfate, hydrogen bisulfite Examples thereof include sodium, sodium hydrogen phosphate, sodium dihydrogen phosphate, potassium dihydrogen phosphate, sodium perchlorate, sodium thiocyanate, sodium thiosulfate, and sodium sulfite.

  Table 9 shows the transmittance per 100 μm path length (thickness) at a wavelength of 193 nm and the refractive index at a wavelength of 193 nm for a part of the organic salt solution that can be used for the liquid 62.

  As organic salts, lithium acetate, sodium acetate, potassium acetate, rubidium acetate, cesium acetate, tetramethylammonium acetate, tetraethylammonium acetate, tetrapropylammonium acetate, triethylammonium acetate, diethyldimethylammonium acetate, tetrabutylammonium acetate, tetramethyl chloride Ammonium, tetramethylammonium bromide, barium methanesulfonate, lanthanum methanesulfonate, cesium methanesulfonate, cyclohexyltrimethylammonium methanesulfonate, sodium cyclohexanesulfonate, sodium cyclohexylmethanesulfonate, sodium decahydronaphthalene-2-sulfonate , 1-adamantane potassium methanesulfonate, 1-adamantane potassium sulfonate Decyltrimethylammonium methanesulfonate, hexadecyltrimethylammonium methanesulfonate, adamantyltrimethylammonium methanesulfonate, cyclohexyltrimethylammonium methanesulfonate, 1,1'-dimethylpiperidinium methanesulfonate, 1-methylquinucyl methanesulfonate Dinium, 1,1-dimethyldecahydroquinolinium methanesulfonate, 1,1,4,4-tetramethylpiperazine-1,4-diium methanesulfonate, 1,4-dimethyl-1,4-diazoniabicyclo [ 2.2.2] Octane can be illustrated.

  Examples of the solvent used for the salt solution include, but are not limited to, water, an organic solvent, and a solution dissolved in a silicone resin or silicone oil. Examples of organic solvents include saturated hydrocarbon compound solutions such as cyclohexane, decane, decahydronaphthalene, n-butyl acrylate, n-methyl acrylate, tetrahydrofuran, chloroform, methyl ethyl ketone, methyl methacrylate, dichloromethane, dimethyl silicone oil. Can do.

  Table 10 shows the transmittance per 100 μm path length (thickness) at a wavelength of 248 nm or 300 nm and a wavelength of 193 nm, 248 nm, or 300 nm for a part of the fine particle dispersion that can be used for the liquid 62. Refractive index.

  As fine particles of fine particle dispersion, magnesium oxide, zirconium oxide, hafnium oxide, α-aluminum oxide, γ-aluminum oxide, aluminum nitride, calcium fluoride, lutetium aluminum garnet, silicon dioxide (silica), magnesium aluminate, sapphire, diamond Inorganic compounds such as can be exemplified. The surface of the fine particles may be modified with other materials such as surface-modified zirconia.

  Examples of the solvent for dispersing the fine particles include, but are not limited to, water, an organic solvent, and a solution dissolved in a silicone resin or silicone oil. Examples of organic solvents include saturated hydrocarbon compound solutions such as cyclohexane, decane, decahydronaphthalene, n-butyl acrylate, n-methyl acrylate, tetrahydrofuran, chloroform, methyl ethyl ketone, methyl methacrylate, dichloromethane, dimethyl silicone oil. Can do.

  The liquid 62 may have a refractive index of 1.32 or more at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10. The liquid 62 may have a refractive index of 1.40 or more at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. The liquid 62 may have a refractive index of 1.45 or more at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10. The liquid 62 may have a refractive index of 1.50 or more at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. The liquid 62 may have a refractive index of 1.55 or more at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. Since the liquid 62 has a refractive index of 1.32 or more at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10, the liquid 62 is refracted at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. The rate can be made closer to the refractive index of the substrate 11 at the wavelength of the deep ultraviolet light 19. Therefore, the reflectance at the interface between the emission surface (second main surface 11b) of the semiconductor light emitting element 10 and the liquid 62 can be reduced.

  The liquid 62 has a refractive index smaller than that of the emission surface (second main surface 11 b) of the semiconductor light emitting device 10 at the wavelength of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10, and from the transparent member 60. May have a large refractive index. Therefore, the reflectance at the interface between the emission surface (second main surface 11 b) of the semiconductor light emitting element 10 and the liquid 62 and the reflectance at the interface between the liquid 62 and the transparent member 60 can be reduced.

  The liquid 62 may have an insulating property. In the present embodiment, the liquid 62 contacts the n-type electrode 15, the p-type electrode 16, the first conductive pad 21, the second conductive pad 22, the bonding member 25, and the conductive wire 33. ing. The insulating liquid 62 can prevent the n-type electrode 15 and the p-type electrode 16 from being short-circuited. When the liquid 62 has conductivity, on the surface of the semiconductor light emitting element 10, on the surface of the first conductive pad 21, on the surface of the second conductive pad 22, and on the surface of the bonding member 25, A thin insulating film may be provided on the surface of the conductive wire 33.

  The package (30, 60) is not limited to the type of package (30, 60) disclosed in the present embodiment, and any type of package used for a light emitting diode can be used. For example, the base 30 may include a side wall surrounding the semiconductor light emitting element 10, the transparent member 60 may have a flat plate shape, and the transparent member 60 may be fixed on the side wall using an adhesive or the like.

  The effects of the semiconductor light emitting device 10 and the manufacturing method thereof and the light emitting module 1 according to the present embodiment will be described.

The semiconductor light emitting device 10 of the present embodiment includes a substrate 11 having a first main surface 11a and a second main surface 11b opposite to the first main surface 11a, and on the first main surface 11a. And a semiconductor layer 18 provided on the substrate. The semiconductor layer 18 includes an active region 13 that is configured to emit deep ultraviolet light 19. The semiconductor light emitting device 10 of the present embodiment includes a periodic concavo-convex structure 17 formed on the second main surface 11b. The periodic concavo-convex structure 17 includes a plurality of protrusions 17a protruding from the second main surface 11b. The first area of the active region 13 in the second plan view of the second main surface 11b is 0.15 mm ² or more. The third area of the plurality of protrusions 17a in the second plan view of the second main surface 11b with respect to the second area of the second main surface 11b in the second plan view of the second main surface 11b The ratio is 60% or more and 100% or less. Each of the plurality of protrusions 17a has an aspect ratio of 0.6 or more.

Since the first area of the active region 13 in the second plan view of the second main surface 11b is 0.15 mm ² or more, the area of the active region 13 where the deep ultraviolet light 19 is generated is increased. In addition, since the plurality of protrusions 17a are formed in a region of 60% or more of the second main surface 11b of the substrate 11 that is the extraction surface of the deep ultraviolet light 19, the deep ultraviolet light 19 from the semiconductor light emitting element 10 is formed. Extraction efficiency can be increased. Further, a plurality of protrusions 17a are formed in a region of 60% or more of the second main surface 11b of the substrate 11 that is the extraction surface of the deep ultraviolet light 19, and the plurality of protrusions 17a are respectively Since it has an aspect ratio of 0.6 or more, the surface area of the substrate 11 can be increased. Heat generated in the semiconductor light emitting device 10 while the semiconductor light emitting device 10 emits the deep ultraviolet light 19 can be efficiently dissipated from the plurality of protrusions 17 a to the outside of the semiconductor light emitting device 10. The temperature of the semiconductor light emitting device 10 can be lowered while the semiconductor light emitting device 10 emits the deep ultraviolet light 19. When a large current is injected into the semiconductor light emitting device 10, the droop phenomenon can be suppressed. The droop phenomenon is a phenomenon in which the light emission efficiency of the semiconductor light emitting element 10 decreases as the current flowing through the semiconductor light emitting element 10 increases. The output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 of the present embodiment can be increased to an extent that cannot be predicted from the conventional semiconductor light emitting device 10 emitting the deep ultraviolet light 19. The above description is supported by the following experimental examples.

  As shown in FIG. 15, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 included in the light emitting module 1 of the present embodiment is emitted from the semiconductor light emitting device included in the light emitting module of the comparative example. It is larger than the output of the deep ultraviolet light 19. The semiconductor light emitting element included in the light emitting module of the comparative example has the same structure as the semiconductor light emitting element 10 included in the light emitting module 1 of the present embodiment, but does not include the periodic uneven structure 17. For example, when the current injected into the semiconductor light emitting device 10 is 500 mA, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 included in the light emitting module 1 of the present embodiment is the same as that of the comparative light emitting module. The output of the deep ultraviolet light 19 emitted from the included semiconductor light emitting element is increased 2.6 times. When the current injected into the semiconductor light emitting device 10 is 600 mA, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 included in the light emitting module 1 of the present embodiment is included in the light emitting module of the comparative example. The output is increased 3.3 times the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device. When the current injected into the semiconductor light emitting element 10 is 700 mA, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10 included in the light emitting module 1 of the present embodiment is included in the light emitting module of the comparative example. The output of the deep ultraviolet light 19 radiated from the semiconductor light emitting element is increased 4.5 times. When the current injected into the semiconductor light emitting device 10 is 800 mA, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 included in the light emitting module 1 of the present embodiment is included in the light emitting module of the comparative example. It increases to 7.9 times the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device. When the current injected into the semiconductor light emitting device 10 is 850 mA, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 included in the light emitting module 1 of the present embodiment is included in the light emitting module of the comparative example. The output is increased to 19.6 times the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device.

  In the semiconductor light emitting device 10 of the present embodiment, as the current injected into the semiconductor light emitting device 10 increases, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 included in the light emitting module 1 increases monotonously. . On the other hand, in the semiconductor light emitting device of the comparative example, when the current injected into the semiconductor light emitting device 10 increases to about 450 mA or more, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 included in the light emitting module decreases. To do.

  As shown in FIG. 16, the external quantum efficiency (EQE) of the semiconductor light emitting device 10 included in the light emitting module 1 of the present embodiment is the external quantum efficiency (EQE) of the semiconductor light emitting device included in the light emitting module of the comparative example. Bigger than. In the semiconductor light emitting device 10 included in the light emitting module 1 of the present embodiment, the external quantum efficiency (EQE) of the semiconductor light emitting device 10 is substantially constant even when the current injected into the semiconductor light emitting device 10 increases. On the other hand, in the semiconductor light emitting device included in the light emitting module of the comparative example, the external quantum efficiency (EQE) of the semiconductor light emitting device 10 is significantly reduced as the current injected into the semiconductor light emitting device 10 increases.

  As shown in FIGS. 17 and 18, the semiconductor light emitting device included in the light emitting module 1 of the present embodiment when the injection current to the semiconductor light emitting device 10 included in the light emitting module 1 of the present embodiment is 50 mA. The peak wavelength of the electroluminescence intensity of 10 is the peak wavelength of the electroluminescence intensity of the semiconductor light emitting element included in the light emitting module of the comparative example when the injection current to the semiconductor light emitting element included in the light emitting module of the comparative example is 50 mA. Almost equal. In both the semiconductor light emitting device 10 included in the light emitting module 1 of the present embodiment and the semiconductor light emitting device included in the light emitting module of the comparative example, the peak wavelength of the electroluminescence intensity shifts to the longer wavelength side as the injected current increases. To do. However, the peak wavelength shift of the electroluminescence intensity of the semiconductor light emitting element 10 included in the light emitting module 1 of the present embodiment is more than the peak wavelength shift of the electroluminescence intensity of the semiconductor light emitting element included in the light emitting module of the comparative example. Significantly smaller.

  With reference to FIG. 18, the junction temperature of the semiconductor light emitting element 10 included in the light emitting module 1 of the present embodiment is significantly lower than the junction temperature of the semiconductor light emitting element included in the light emitting module of the comparative example. The junction temperature is the temperature of the junction between the p-type semiconductor layer 14 and the n-type semiconductor layer 12 of the semiconductor light emitting element 10 included in the light emitting module 1. The junction temperature can also be defined as the temperature of the active region 13. The temperature of the junction is estimated from the peak wavelength shift of the electroluminescence intensity of the semiconductor light emitting element 10 included in the light emitting module 1.

Both the semiconductor light emitting device 10 of the present embodiment and the semiconductor light emitting device of the comparative example have a first area of the active region 13 of 0.15 mm ² or more. When a large current is injected into the active region 13 having such a large area, a large amount of heat is generated in the semiconductor light emitting device 10. This heat is generated mainly in the active region 13, the p-type contact layer (second p-type semiconductor layer 14 b), and the substrate 11. In the p-type contact layer (second p-type semiconductor layer 14b) and the substrate 11, deep ultraviolet light 19 emitted from the active region 13 is absorbed by the p-type contact layer (second p-type semiconductor layer 14b) and the substrate 11. As a result, heat is generated. Since the semiconductor light emitting element of the comparative example does not include the periodic uneven structure 17, the semiconductor light emitting element of the comparative example cannot dissipate heat generated in the semiconductor light emitting element 10 to the outside of the semiconductor light emitting element 10. As the current injected into the semiconductor light emitting device of the comparative example increases, the temperature of the semiconductor light emitting device of the comparative example rapidly increases. As the current injected into the semiconductor light emitting device of the comparative example increases, the droop phenomenon occurs in the semiconductor light emitting device of the comparative example, and the external quantum efficiency (EQE) of the semiconductor light emitting device 10 decreases. Furthermore, since the semiconductor light emitting element of the comparative example has a high element temperature (junction temperature), the semiconductor light emitting element of the comparative example has a shorter lifetime than the semiconductor light emitting element 10 of the present embodiment.

  On the other hand, the semiconductor light emitting device 10 of the present embodiment includes the periodic uneven structure 17. The substrate 11 of the semiconductor light emitting device 10 of the present embodiment has a larger surface area than the substrate 11 of the semiconductor light emitting device of the comparative example. Therefore, the semiconductor light emitting element 10 of the present embodiment can efficiently dissipate heat generated in the semiconductor light emitting element 10 to the outside of the semiconductor light emitting element 10. Even if the current injected into the semiconductor light emitting device 10 of the present embodiment increases, the temperature of the semiconductor light emitting device 10 of the present embodiment can be suppressed from rapidly increasing. Even if the current injected into the semiconductor light emitting device 10 of the present embodiment increases, in the semiconductor light emitting device 10 of the present embodiment, the droop phenomenon is suppressed and the external quantum efficiency of the semiconductor light emitting device 10 is suppressed. It is suppressed that (EQE) falls. Furthermore, since the semiconductor light emitting device 10 of the present embodiment has a lower element temperature (junction temperature) than the semiconductor light emitting device of the comparative example, the semiconductor light emitting device 10 of the present embodiment is more than the semiconductor light emitting device of the comparative example. Also have a long life and high reliability.

  The periodic concavo-convex structure 17 of the present embodiment has the following two functions. The first function of the periodic concavo-convex structure 17 of the present embodiment is that the deep ultraviolet light 19 radiated from the active region 13 is prevented from being totally reflected by the second main surface 11b of the substrate 11, and thus the semiconductor. This is to increase the extraction efficiency of the deep ultraviolet light 19 of the light emitting element 10. The second function of the periodic concavo-convex structure 17 of the present embodiment is to increase the surface area of the substrate 11 and efficiently dissipate heat generated in the semiconductor light emitting element 10 to the outside of the semiconductor light emitting element 10. is there. That is, the periodic uneven structure 17 of the present embodiment can function as a heat radiating fin of the semiconductor light emitting element 10. The output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 of the present embodiment can be increased to an extent that cannot be predicted from the conventional semiconductor light emitting device 10 emitting the deep ultraviolet light 19.

The semiconductor light emitting device 10 of the present embodiment is covered with a fluid (62). The semiconductor light emitting device 10 of the present embodiment has a first area of the active region 13 of 0.15 mm ² or more. When a large current is injected into the active region 13 having such a large area, a large amount of heat is generated in the semiconductor light emitting device 10. This heat is generated mainly in the active region 13, the p-type contact layer (second p-type semiconductor layer 14 b), and the substrate 11. In the p-type contact layer (second p-type semiconductor layer 14b) and the substrate 11, deep ultraviolet light 19 emitted from the active region 13 is absorbed by the p-type contact layer (second p-type semiconductor layer 14b) and the substrate 11. As a result, heat is generated. The fluid (62) convects around the semiconductor light emitting element 10 by heat generated in the semiconductor light emitting element 10. Therefore, a specific part of the fluid (62) does not continue to exist in the vicinity of the semiconductor light emitting element 10 where the light density of the deep ultraviolet light 19 is high. While the semiconductor light emitting element 10 continues to emit the deep ultraviolet light 19, the temperature rise of the fluid (62) is suppressed. The fluid (62) can cool the semiconductor light emitting device 10 efficiently. When a large current is injected into the semiconductor light emitting device 10, the droop phenomenon can be suppressed. The output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 of the present embodiment can be increased to an extent that cannot be predicted from the conventional semiconductor light emitting device.

In the semiconductor light emitting device 10 of the present embodiment, the first area of the active region 13 may be 0.35 mm ² or more. Since the active region 13 has a wider area, according to the semiconductor light emitting device 10 of the present embodiment, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 can be further increased.

In the semiconductor light emitting device 10 of the present embodiment, the aspect ratio h ₁ / d ₁ of each of the plurality of protrusions 17a may be 1.0 or more. Since the surface area of the substrate 11 is further increased, heat generated in the semiconductor light emitting device 10 can be dissipated more efficiently to the outside of the semiconductor light emitting device 10. According to the semiconductor light emitting device 10 of the present embodiment, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 can be further increased. The semiconductor light emitting device 10 of the present embodiment has a long life and high reliability.

  In the semiconductor light emitting device 10 of the present embodiment, the substrate 11 may be an aluminum nitride (AlN) substrate. The substrate 11, which is an aluminum nitride (AlN) substrate, has the same lattice constant and thermal expansion coefficient as the semiconductor layer 18 including the active region 13 configured to emit deep ultraviolet light 19. Therefore, the substrate 11 which is an aluminum nitride (AlN) substrate can reduce the dislocation defect density in the semiconductor layer 18. According to the semiconductor light emitting device 10 of the present embodiment, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 can be further increased. The semiconductor light emitting device 10 of the present embodiment has a long life and high reliability.

  In the semiconductor light emitting device 10 of the present embodiment, the plurality of protrusions 17a may each have a cone shape or a pyramid shape. The output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 of the present embodiment can be increased to an extent that cannot be predicted from the conventional semiconductor light emitting device 10 emitting the deep ultraviolet light 19.

The semiconductor light emitting device 10 according to the present embodiment further includes an electrode (p-type electrode 16) on the surface 18 a of the semiconductor layer 18 on the side opposite to the substrate 11. In the first plan view of the first main surface 11a, the electrode (p-type electrode 16) has a comb shape. The comb-shaped electrode (p-type electrode 16) makes it possible to inject current uniformly into the active region 13 having a first area of 0.15 mm ² or more. According to the semiconductor light emitting device 10 of the present embodiment, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 can be further increased. The semiconductor light emitting device 10 of the present embodiment has a long life and high reliability.

The method for manufacturing the semiconductor light emitting device 10 according to the present embodiment includes forming the semiconductor layer 18 on the first main surface 11 a of the substrate 11. The semiconductor layer 18 includes an active region 13 configured to emit deep ultraviolet light 19. The first area of the active region 13 in the second plan view of the second main surface 11b of the substrate 11 opposite to the first main surface 11a is 0.15 mm ² or more. The method for manufacturing the semiconductor light emitting device 10 of the present embodiment further includes forming the periodic uneven structure 17 on the second main surface 11b. The periodic concavo-convex structure 17 includes a plurality of protrusions 17a protruding from the second main surface 11b. The third area of the plurality of protrusions 17a in the second plan view of the second main surface 11b with respect to the second area of the second main surface 11b in the second plan view of the second main surface 11b The ratio is 60% or more and 100% or less. Each of the plurality of protrusions 17a has an aspect ratio of 0.6 or more.

  Forming the periodic uneven structure 17 includes laminating the first layer 41, the second layer 42, and the third layer 43 in this order on the second main surface 11b. The first layer 41, the second layer 42, and the third layer 43 are made of different materials. The first layer 41 has a larger thickness than each of the second layer 42 and the third layer 43. Forming the periodic concavo-convex structure 17 includes forming a plurality of first concave portions 43 a in the third layer 43 by imprinting the mold 45 having the concavo-convex pattern on the third layer 43, It further includes forming a plurality of second recesses 42 a in the second layer 42 using the third layer 43 in which the first recesses 43 a are formed. The periodic concavo-convex structure 17 is formed by anisotropically etching a part of the first layer 41 using the second layer 42 in which the plurality of second concave portions 42a are formed as a mask. It further includes forming a plurality of third recesses 41 a in one layer 41. In the plurality of third recesses 41a, the second main surface 11b of the substrate 11 is exposed. Forming the periodic concavo-convex structure 17 includes forming the fourth layer 47 on the second main surface 11b of the substrate 11 exposed in the plurality of third recesses 41a, and the plurality of third recesses 41a. The plurality of columnar structures 48 are formed on the second main surface 11b by lifting off the first layer 41 formed with the second main surface using the plurality of columnar structures 48. It further includes forming the periodic concavo-convex structure 17 on the second main surface 11b by etching 11b.

Since the first area of the active region 13 in the second plan view of the second main surface 11b is 0.15 mm ² or more, the area of the active region 13 where the deep ultraviolet light 19 is generated is increased. In addition, since the plurality of protrusions 17a are formed in a region of 60% or more of the second main surface 11b of the substrate 11 that is the extraction surface of the deep ultraviolet light 19, the deep ultraviolet light 19 from the semiconductor light emitting element 10 is formed. Extraction efficiency can be increased. Further, a plurality of protrusions 17a are formed in a region of 60% or more of the second main surface 11b of the substrate 11 that is the extraction surface of the deep ultraviolet light 19, and the plurality of protrusions 17a are respectively Since it has an aspect ratio of 0.6 or more, the surface area of the substrate 11 can be increased. Heat generated in the semiconductor light emitting device 10 while the semiconductor light emitting device 10 emits the deep ultraviolet light 19 can be efficiently dissipated from the plurality of protrusions 17 a to the outside of the semiconductor light emitting device 10. The temperature of the semiconductor light emitting device 10 can be lowered while the semiconductor light emitting device 10 emits the deep ultraviolet light 19. When a large current is injected into the semiconductor light emitting device 10, the droop phenomenon can be suppressed. According to the method for manufacturing the semiconductor light emitting device 10 of the present embodiment, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10 can be predicted from the conventional semiconductor light emitting device 10 that emits the deep ultraviolet light 19. Can be increased to a lesser extent.

  In the method for manufacturing the semiconductor light emitting device 10 according to the present embodiment, a plurality of first recesses 43 a are formed in the third layer 43 by imprinting the mold 45 having the concavo-convex pattern on the third layer 43. . Therefore, the periodic uneven structure 17 can be formed with high throughput, high accuracy, and low cost over 60% or more of the second main surface 11b. On the other hand, in order to form the periodic concavo-convex structure 17 on the second main surface 11b of the substrate 11 using electron beam lithography, an electron beam is applied over 60% or more of the second main surface 11b having a large area. Must be scanned. Therefore, depending on the method of forming the periodic uneven structure 17 on 60% or more of the second main surface 11b of the substrate 11 using electron beam lithography, the substrate 11 including the periodic uneven structure 17 is manufactured at high throughput and at low cost. I can't do it.

  In the method for manufacturing the semiconductor light emitting device 10 according to the present embodiment, a part of the first layer 41 is anisotropically etched using the second layer 42 having the plurality of second recesses 42a as a mask. As a result, a plurality of third recesses 41 a are formed in the first layer 41. The first layer 41 has a greater thickness than each of the second layer 42 and the third layer 43. Therefore, the aspect ratio of the third recess 41a and the aspect ratio of each of the plurality of columnar structures 48 formed in the third recess 41a can be increased. By using the plurality of columnar structures 48 to etch the second main surface 11b of the substrate 11, the periodic uneven structure 17 having a high aspect ratio can be formed on the second main surface 11b of the substrate 11. The first layer 41 and the third layer 43 are made of different materials. As the first material constituting the first layer 41, a material that can be lifted off more easily than the third material constituting the third layer 43 can be selected. By lifting off the first layer 41 in which the plurality of third recesses 41 a are formed, the periodic uneven structure 17 having a high aspect ratio can be easily formed on the second main surface 11 b of the substrate 11. According to the manufacturing method of the semiconductor light emitting device 10 of the present embodiment, the semiconductor light emitting device 10 in which the output of the emitted deep ultraviolet light 19 is increased can be manufactured with high throughput, low cost and easily.

  The light emitting module 1 of the present embodiment includes a semiconductor light emitting element 10, a liquid 62 that seals the semiconductor light emitting element 10, and packages (30, 60) that contain the semiconductor light emitting element 10 and the liquid 62. The liquid 62 is transparent to the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. The package (30, 60) includes a transparent member 60 that is transparent to the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10.

  Since the light emitting module 1 of the present embodiment includes the semiconductor light emitting element 10, the output of the deep ultraviolet light 19 emitted from the light emitting module 1 can be increased. Further, since the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10 is increased, the number of semiconductor light emitting elements 10 used in one light emitting module 1 can be reduced. Therefore, the price of the light emitting module 1 can be reduced. The light emitting module 1 of the present embodiment includes a semiconductor light emitting element 10 having a long life and high reliability. Therefore, the light emitting module 1 of the present embodiment has a long life and high reliability. For example, when the time when the light output of the light emitting module 1 is half the light output of the light emitting module 1 immediately after the operation is defined as the lifetime of the light emitting module 1, the light emitting module 1 of the present embodiment has about 11,500 hours. Have a lifetime of.

  Since the transparent member 60 and the liquid 62 are transparent to the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10, the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10 is outside the package (30, 60). Can be taken out efficiently. Since the transparent member 60 and the liquid 62 are transparent to the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10, the transparent member 60 and the liquid 62 have a low light absorption rate at the wavelength of the deep ultraviolet light 19. . Therefore, even if the transparent member 60 and the liquid 62 are exposed to the deep ultraviolet light 19 for a long time, the light transmittance of the transparent member 60 and the liquid 62 at the wavelength of the deep ultraviolet light 19 can be prevented from decreasing.

The semiconductor light emitting device 10 of the present embodiment has a first area of the active region 13 of 0.15 mm ² or more. When a large current is injected into the active region 13 having such a large area, a large amount of heat is generated in the semiconductor light emitting device 10. This heat is generated mainly in the active region 13, the p-type contact layer (second p-type semiconductor layer 14 b), and the substrate 11. In the p-type contact layer (second p-type semiconductor layer 14b) and the substrate 11, deep ultraviolet light 19 emitted from the active region 13 is absorbed by the p-type contact layer (second p-type semiconductor layer 14b) and the substrate 11. As a result, heat is generated. In the light emitting module 1 of the present embodiment, the semiconductor light emitting element 10 is sealed with a liquid 62 that is transparent to the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10. The liquid 62 convects the inner space of the package (30, 60) by heat generated in the semiconductor light emitting device 10. For this reason, a specific part of the liquid 62 does not continue to exist in the vicinity of the semiconductor light emitting element 10 in which the light density of the deep ultraviolet light 19 is high. While the semiconductor light emitting element 10 continues to emit the deep ultraviolet light 19, the temperature rise of the liquid 62 is suppressed. The liquid 62 can cool the semiconductor light emitting element 10 efficiently. When a large current is injected into the semiconductor light emitting device 10, the droop phenomenon can be suppressed. According to the light emitting module 1 of the present embodiment, the output of the deep ultraviolet light 19 emitted from the light emitting module 1 can be increased to an extent that cannot be predicted from a conventional light emitting module. Further, it is possible to prevent the liquid 62 existing in the vicinity of the semiconductor light emitting element 10 having a high light density of the deep ultraviolet light 19 from being deteriorated and the light transmittance of the liquid 62 at the wavelength of the deep ultraviolet light 19 from being lowered. The light emitting module 1 of the present embodiment has a long life and high reliability.

  Since the liquid 62 is positioned between the transparent member 60 and the semiconductor light emitting element 10 that emits the deep ultraviolet light 19, the light density of the deep ultraviolet light 19 in the transparent member 60 is the deep ultraviolet light 19 in the vicinity of the semiconductor light emitting element 10. Is sufficiently smaller than the light density. Therefore, even if the transparent member 60 that is a solid has a higher light absorption rate with respect to the deep ultraviolet light 19 than the liquid 62, the transparent member 60 is deteriorated by being irradiated with the deep ultraviolet light 19. Can be prevented. The light emitting module 1 of the present embodiment has a long life and high reliability.

(Embodiment 2)
A semiconductor light emitting device 10b according to the second embodiment will be described with reference to FIGS. The semiconductor light emitting device 10b of the present embodiment has the same configuration as the semiconductor light emitting device 10 of the first embodiment, but is mainly different in the following points. Referring to FIGS. 19 and 20, in the semiconductor light emitting device 10b of the present embodiment, each of the plurality of protrusions 17b has a truncated cone shape. Each of the plurality of protrusions 17b may have a truncated pyramid shape. The plurality of protrusions 17b having a truncated cone or truncated pyramid shape can further increase the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting element 10b than the plurality of protrusions 17a of the first embodiment. Each of the plurality of protrusions 17b has a bottom width (diameter) d ₁ and a height h ₁ and the upper surface of the width (diameter) d _2. d ₂ / d ₁ may be 0.10 or more, or 0.15 or more. d ₂ / d ₁ may be 0.50 or less, or 0.45 or less. d ₂ / h ₁ may be 0.08 or more, and may be 0.12 or more. d ₂ / h ₁ may be 0.50 or less, or 0.40 or less.

Referring to FIG. 21, a plane wave in the direction perpendicular to the second major surface 11b of each of the plurality of the upper surface of the width of the protrusion 17b (diameter) d ₂ semiconductor light emitting element 10b from the active region 13 when changing the The change in the output of the deep ultraviolet light 19 traveling as shown in FIG. The semiconductor light emitting element 10b is covered with air. The plurality of protrusions 17b are arranged in a triangular lattice pattern with a period of 300 nm. Each of the plurality of protrusions 17b has a width (diameter) d ₁ of 290 nm and a height h _{1 of} 300 nm. When the width (diameter) d ₂ of the upper surface of each of the plurality of protrusions 17b is 60 nm or more and 140 nm or less, the output of the deep ultraviolet light 19 of the semiconductor light emitting element 10b is particularly increased.

  The manufacturing method of the semiconductor light emitting element 10b of the present embodiment includes the same steps as the manufacturing method of the semiconductor light emitting element 10 of the first embodiment, but mainly differs in the following points. In the manufacturing method of the semiconductor light emitting device 10b of the present embodiment, when the second main surface 11b is etched using the plurality of columnar structures 48, the etching depth of the second main surface 11b is set to the first embodiment. The etching depth is smaller than the etching depth of the second main surface 11b. Thus, a plurality of protrusions 17b each having the shape of a truncated cone or a truncated pyramid can be formed.

  In addition to the effects of the semiconductor light emitting element 10 of the first embodiment, the semiconductor light emitting element 10b of the present embodiment has the following effects. In the semiconductor light emitting device 10b of the present embodiment, each of the plurality of protrusions 17b has a truncated cone shape or a truncated pyramid shape. According to the semiconductor light emitting device 10b of the present embodiment, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10b can be further increased.

(Embodiment 3)
With reference to FIG.22 and FIG.23, the semiconductor light-emitting device 10c which concerns on Embodiment 3 is demonstrated. The semiconductor light emitting device 10c of the present embodiment has the same configuration as the semiconductor light emitting device 10b of the second embodiment, but is mainly different in the following points.

In the semiconductor light emitting device 10c of the present embodiment, one or more fine structures 50 are further provided on the second main surface 11b. Each of the one or more microstructures 50 has a smaller size than each of the plurality of protrusions 17b. Each of the one or more microstructures 50 has a width (diameter) of d ₃ and a height of h ₃ . One or more the width of each of the microstructures 50 (diameter) d ₃ is less than the width of each of the plurality of protrusions 17b (diameter) d _1. The width (diameter) d ₃ of each of the one or more microstructures 50 may be 5 nm or more, or 10 nm or more. The width (diameter) d ₃ of each of the one or more microstructures 50 may be 70 nm or less, or 50 nm or less. The height h ₃ of each of the one or more microstructures 50 is smaller than the height h ₁ of each of the plurality of protrusions 17b. The height h ₃ of each of the one or more microstructures 50 may be 3 nm or more, or 5 nm or more. The height h ₃ of each of the one or more microstructures 50 may be 60 nm or less, or 40 nm or less.

  Each of the one or more microstructures 50 may have a hemispherical shape. Each of the one or more microstructures 50 may have a cone shape or a pyramid shape. Each of the one or more microstructures 50 may have a truncated cone shape or a truncated pyramid shape.

One or more microstructures 50 are disposed around one of the plurality of protrusions 17b. A distance d ₄ between each of the one or more microstructures 50 and one of the plurality of protrusions 17 b may be equal to or less than the wavelength of the deep ultraviolet light 19 emitted from the active region 13. A plurality of microstructures 50 may be disposed around each of the plurality of protrusions 17b. In the second plan view of the second main surface 11b, the plurality of fine structures 50 may be arranged symmetrically around each of the plurality of protrusions 17b.

  The manufacturing method of the semiconductor light emitting device 10c of the present embodiment includes the same steps as the manufacturing method of the semiconductor light emitting device 10b of the second embodiment, but mainly differs in the following points. In the method of manufacturing the semiconductor light emitting device 10c of the present embodiment, one or more microstructures (not shown) corresponding to the one or more microstructures 50 are formed on the second main surface 11b of the substrate 11. Including that. One or more microstructures can be created in the same process as the plurality of columnar structures 48 of the first embodiment. Each of the one or more microstructures has a smaller size than each of the plurality of columnar structures 48. In the method of manufacturing the semiconductor light emitting device 10c according to the present embodiment, the second main surface 11b is etched using the plurality of columnar structures 48 and one or more microstructures, whereby the second structure of the substrate 11 is obtained. It further includes forming the periodic uneven structure 17 and one or more fine structures 50 on the main surface 11b. Thus, the semiconductor light emitting device 10c of the present embodiment can be manufactured.

  In addition to the effects of the semiconductor light emitting element 10b of the second embodiment, the semiconductor light emitting element 10c of the present embodiment has the following effects.

  The semiconductor light emitting device 10c of the present embodiment further includes one or more fine structures 50 on the second main surface 11b. Each of the one or more microstructures 50 has a smaller size than each of the plurality of protrusions 17b. One or more microstructures 50 are disposed around one of the plurality of protrusions 17b. When the deep ultraviolet light 19 emitted from the active region 13 is incident on each of the one or more microstructures 50, near-field light is generated around each of the one or more microstructures 50. In one of the plurality of protrusions 17 b adjacent to each of the one or more microstructures 50, the near-field light does not pass through the one or more microstructures 50 and each of the one or more microstructures 50. Is combined with deep ultraviolet light 19 incident on one of the plurality of protrusions 17b adjacent to. The near-field light and the deep ultraviolet light 19 incident on the plurality of protrusions 17b without passing through the one or more fine structures 50 are extracted from the plurality of protrusions 17b to the outside of the semiconductor light emitting element 10c. According to the semiconductor light emitting device 10c of the present embodiment, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10c can be further increased.

(Embodiment 4)
With reference to FIG. 24, a semiconductor light emitting element 10d according to the fourth embodiment will be described. The semiconductor light emitting device 10d of the present embodiment has the same configuration as the semiconductor light emitting device 10 of the first embodiment, but is mainly different in the following points.

  In the semiconductor light emitting device 10 d of the present embodiment, the semiconductor layer 18 includes dislocation defects 55 extending from the n-type semiconductor layer 12 to the p-type semiconductor layer 14. The dislocation defect 55 may or may not extend to the surface 18a of the semiconductor layer 18 opposite to the substrate 11. The dislocation defect 55 may have an n-type. In the third plan view of the surface 18 a of the semiconductor layer 18, the p-type electrode 16 is disposed away from the portion of the dislocation defect 55 closest to the surface 18 a of the semiconductor layer 18.

  Specifically, the semiconductor light emitting element 10d further includes an island-shaped insulating layer 35 on the first region of the surface 18a of the semiconductor layer 18 (or the p-type semiconductor layer 14). In the third planar view of the surface 18a of the semiconductor layer 18, the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 is present in the first region. The island-shaped insulating layer 35 covers the first region of the surface 18 a of the semiconductor layer 18. In the third plan view of the surface 18 a of the semiconductor layer 18, the island-shaped insulating layer 35 covers the portion of the dislocation defect 55 closest to the surface 18 a of the semiconductor layer 18. The p-type electrode 16 is provided on the second region of the surface 18a of the semiconductor layer 18 (or the p-type semiconductor layer 14) different from the first region. The p-type electrode 16 is in contact with the second region of the surface 18 a of the semiconductor layer 18. The p-type electrode 16 is not in contact with the first region of the surface 18a of the semiconductor layer 18 (or the p-type semiconductor layer 14). The p-type electrode 16 may also be provided on the island-shaped insulating layer 35. In the third plan view of the surface 18 a of the semiconductor layer 18, the portion of the dislocation defect 55 closest to the surface 18 a of the semiconductor layer 18 does not exist in the second region of the surface 18 a of the semiconductor layer 18.

The island-shaped insulating layer 35 is not particularly limited, but may be a silicon dioxide (SiO ₂ ) layer. In the third plan view of the surface 18a of the semiconductor layer 18, the island-shaped insulating layer 35 is not particularly limited, but may have a rectangular shape or a circular shape. The shortest distance d between the outer periphery (or p-type electrode 16) of the island-like insulating film and the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18 ₅ may be 10 μm or more, 20 μm or more, or 30 μm or more. The shortest distance d between the outer periphery (or p-type electrode 16) of the island-like insulating film and the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18 _By setting ₅ to 10 μm or more, the current injected from the n-type electrode 15 and the p-type electrode 16 can be reliably prevented from leaking to the dislocation defect 55. The shortest distance d between the outer periphery (or p-type electrode 16) of the island-like insulating film and the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18 ₅ may be 100 μm or less, or 50 μm or less. The shortest distance d between the outer periphery (or p-type electrode 16) of the island-like insulating film and the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18 _By setting ₅ to 100 μm or less, it is possible to prevent the contact area between the p-type electrode 16 and the semiconductor layer 18 (or the p-type semiconductor layer 14) from being reduced and the light emission efficiency of the semiconductor light emitting element 10d from being lowered. Is done.

  With reference to FIG. 25, a method for manufacturing the semiconductor light emitting element 10d according to the fourth embodiment will be described. The manufacturing method of the semiconductor light emitting element 10d of the present embodiment includes the same steps as the manufacturing method of the semiconductor light emitting element 10 of the first embodiment, but mainly differs in the following points.

  The method for manufacturing the semiconductor light emitting device 10d of the present embodiment includes specifying the position of the dislocation defect 55 in the third plan view of the surface 18a of the semiconductor layer 18 (S11). For example, even if the position of the dislocation defect 55 in the third planar view of the surface 18a of the semiconductor layer 18 is specified by microscopic Raman spectroscopy or by observing the surface 18a of the semiconductor layer 18 using an optical microscope. Good. In the third plan view of the surface 18 a of the semiconductor layer 18, the portion of the dislocation defect 55 closest to the surface 18 a of the semiconductor layer 18 exists in the first region of the surface 18 a of the semiconductor layer 18. In the third planar view of the surface 18a of the semiconductor layer 18, the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 is in a second region of the surface 18a of the semiconductor layer 18 different from the first region. Does not exist.

  In the method of manufacturing the semiconductor light emitting device 10d of the present embodiment, the p-type electrode 16 is separated from the dislocation defect 55 portion closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18. It forms on the surface 18a of the semiconductor layer 18 (S12, S3d). Specifically, the p-type electrode 16 is formed on the surface 18a of the semiconductor layer 18 away from the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18. In step S12, S3d, the island-shaped insulating layer 35 covering the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18 is formed. Forming on the first region of the surface 18a (S12) and forming the p-type electrode 16 on the second region of the surface 18a of the semiconductor layer 18 different from the first region (3d). May be included. The p-type electrode 16 may also be formed on the island-shaped insulating layer 35. Forming the island-shaped insulating layer 35 on the first region of the surface 18a of the semiconductor layer 18 (S12) is performed on the entire surface 18a of the semiconductor layer 18 by, for example, vapor deposition or spin coating. The insulating layer 35 may be formed, and the insulating layer 35 on the second region of the surface 18a of the semiconductor layer 18 may be removed by etching.

  In addition to the effects of the semiconductor light emitting device 10 of the first embodiment and the manufacturing method thereof, the semiconductor light emitting device 10d and the manufacturing method of the present embodiment have the following effects.

  The semiconductor light emitting element 10 d of the present embodiment further includes a p-type electrode 16 on the surface 18 a of the semiconductor layer 18 on the side opposite to the substrate 11. The semiconductor layer 18 further includes an n-type semiconductor layer 12 and a p-type semiconductor layer 14. The n-type semiconductor layer 12 is provided on the substrate 11 side with respect to the active region 13. The p-type semiconductor layer 14 is provided on the side opposite to the substrate 11 with respect to the active region 13. The p-type electrode 16 is in contact with the p-type semiconductor layer 14. The semiconductor layer 18 includes dislocation defects 55 extending from the n-type semiconductor layer 12 to the p-type semiconductor layer 14. In the third plan view of the surface 18 a of the semiconductor layer 18, the p-type electrode 16 is disposed away from the portion of the dislocation defect 55 closest to the surface 18 a of the semiconductor layer 18.

  In the third plan view of the surface 18a of the semiconductor layer 18, the p-type electrode 16 is arranged away from the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18. Therefore, the n-type electrode 15 and the p-type electrode The current injected from 16 into the active region 13 of the semiconductor layer 18 can be prevented from leaking to the dislocation defect 55. Therefore, the light emission efficiency of the semiconductor light emitting element 10d increases, and the droop phenomenon is suppressed. According to the semiconductor light emitting device 10d of the present embodiment, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10d can be further increased. The semiconductor light emitting element 10d of the present embodiment has a long life and high reliability.

  The semiconductor light emitting element 10 d of the present embodiment further includes an island-shaped insulating layer 35 on the first region of the surface 18 a of the semiconductor layer 18. In the third plan view of the surface 18 a of the semiconductor layer 18, the portion of the dislocation defect 55 closest to the surface 18 a of the semiconductor layer 18 exists in the first region of the surface 18 a of the semiconductor layer 18. In the third plan view of the surface 18 a of the semiconductor layer 18, the island-shaped insulating layer 35 covers the portion of the dislocation defect 55 closest to the surface 18 a of the semiconductor layer 18. The p-type electrode 16 covers the second region of the surface 18a of the semiconductor layer 18 different from the first region and the island-shaped insulating layer 35.

  The island-shaped insulating layer 35 can prevent the current injected from the n-type electrode 15 and the p-type electrode 16 into the active region 13 of the semiconductor layer 18 from leaking to the dislocation defect 55. Therefore, the light emission efficiency of the semiconductor light emitting element 10d increases, and the droop phenomenon is suppressed. According to the semiconductor light emitting device 10d of the present embodiment, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10d can be further increased. The semiconductor light emitting element 10d of the present embodiment has a long life and high reliability.

  The method for manufacturing the semiconductor light emitting device 10d of the present embodiment further includes specifying the position of the dislocation defect 55 in the third plan view of the surface 18a of the semiconductor layer 18 (S11). The semiconductor layer 18 further includes an n-type semiconductor layer 12 and a p-type semiconductor layer 14. The n-type semiconductor layer 12 is provided on the substrate 11 side with respect to the active region 13. The p-type semiconductor layer 14 is provided on the side opposite to the substrate 11 with respect to the active region 13. The dislocation defect 55 extends from the n-type semiconductor layer 12 to the p-type semiconductor layer 14. In the method of manufacturing the semiconductor light emitting device 10d of the present embodiment, the p-type electrode 16 is separated from the dislocation defect 55 portion closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18. And forming on the surface 18a of the semiconductor layer 18 (S12, S3d). The p-type electrode 16 is in contact with the p-type semiconductor layer 14.

  In the third plan view of the surface 18a of the semiconductor layer 18, the p-type electrode 16 is arranged away from the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18. Therefore, the n-type electrode 15 and the p-type electrode The current injected from 16 into the active region 13 of the semiconductor layer 18 can be prevented from leaking to the dislocation defect 55. Therefore, the light emission efficiency of the semiconductor light emitting element 10d increases, and the droop phenomenon is suppressed. According to the method for manufacturing the semiconductor light emitting device 10d of the present embodiment, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10d can be further increased. According to the method for manufacturing the semiconductor light emitting device 10d of the present embodiment, the semiconductor light emitting device 10d having a long life and high reliability can be manufactured.

  In the method for manufacturing the semiconductor light emitting element 10d of the present embodiment, the p-type electrode 16 is separated from the dislocation defect 55 portion closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18. Forming on the surface 18a of the semiconductor layer 18 (S12, S3d) is an island-like shape covering the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18. The insulating layer 35 is formed on the first region of the surface 18a of the semiconductor layer 18 (S12), and the p-type electrode 16 is formed on the second region of the surface 18a of the semiconductor layer 18 different from the first region. Forming (3d). In the third plan view of the surface 18a of the semiconductor layer 18, the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 exists in the first region. In the third plan view of the surface 18 a of the semiconductor layer 18, the island-shaped insulating layer 35 covers the portion of the dislocation defect 55 closest to the surface 18 a of the semiconductor layer 18.

  The island-shaped insulating layer 35 can prevent the current injected from the n-type electrode 15 and the p-type electrode 16 into the active region 13 of the semiconductor layer 18 from leaking to the dislocation defect 55. Therefore, the light emission efficiency of the semiconductor light emitting element 10d increases, and the droop phenomenon is suppressed. According to the method for manufacturing the semiconductor light emitting device 10d of the present embodiment, the output of the deep ultraviolet light 19 emitted from the semiconductor light emitting device 10d can be further increased. According to the method for manufacturing the semiconductor light emitting device 10d of the present embodiment, the semiconductor light emitting device 10d having a long life and high reliability can be manufactured.

(Embodiment 5)
With reference to FIG. 26, the semiconductor light emitting device 10e according to the fifth embodiment will be described. The semiconductor light emitting device 10e of the present embodiment has the same configuration as the semiconductor light emitting device 10d of the fourth embodiment and has the same effects, but is mainly different in the following points.

  In the semiconductor light emitting device 10e of the present embodiment, the p-type electrode 16 is disposed away from the dislocation defect 55 portion closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18. ing. Specifically, the p-type electrode 16 has a through hole 57. In the third planar view of the surface 18 a of the semiconductor layer 18, the portion of the dislocation defect 55 closest to the surface 18 a of the semiconductor layer 18 exists in the through hole 57. The first region of the surface 18 a of the semiconductor layer 18 is exposed from the p-type electrode 16 through the through hole 57. The p-type electrode 16 is provided on the second region of the surface 18a of the semiconductor layer 18 different from the first region. The p-type electrode 16 is in contact with the second region of the surface 18 a of the semiconductor layer 18. The p-type electrode 16 is not in contact with the first region of the surface 18 a of the semiconductor layer 18. In the third plan view of the surface 18 a of the semiconductor layer 18, the portion of the dislocation defect 55 closest to the surface 18 a of the semiconductor layer 18 does not exist in the second region of the surface 18 a of the semiconductor layer 18.

In the third planar view of the surface 18a of the semiconductor layer 18, the through hole 57 is not particularly limited, but may have a rectangular shape or a circular shape. The shortest distance d ₆ between the p-type electrode 16 and the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18 may be 10 μm or more. 20 μm or more, or 30 μm or more. By setting the shortest distance d ₆ between the p-type electrode 16 and the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18 to 10 μm or more, The current injected from the n-type electrode 15 and the p-type electrode 16 can be reliably prevented from leaking to the dislocation defect 55. The shortest distance d ₆ between the p-type electrode 16 and the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18 may be 100 μm or less. 50 μm or less. By setting the shortest distance d ₆ between the p-type electrode 16 and the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18 to 100 μm or less, It is prevented that the contact area between the p-type electrode 16 and the semiconductor layer 18 (or the p-type semiconductor layer 14) is reduced and the light emission efficiency of the semiconductor light emitting device 10e is reduced.

  With reference to FIGS. 26 and 27, a method of manufacturing the semiconductor light emitting element 10e according to the fifth embodiment will be described. The manufacturing method of the semiconductor light emitting element 10e of the present embodiment includes the same steps as the manufacturing method of the semiconductor light emitting element 10d of the fourth embodiment, but is mainly different in the following points.

  In the method for manufacturing the semiconductor light emitting device 10e according to the present embodiment, after specifying the position of the dislocation defect 55 in the third plan view of the surface 18a of the semiconductor layer 18 (S11), the p-type electrode 16 is replaced with the semiconductor layer. Forming on the second region of the surface 18a of the semiconductor layer 18 away from the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18 (S3e). Yes. The p-type electrode 16 is in contact with the p-type semiconductor layer 14. The p-type electrode 16 is formed on the second region of the surface 18a of the semiconductor layer 18 away from the portion of the dislocation defect 55 closest to the surface 18a of the semiconductor layer 18 in the third plan view of the surface 18a of the semiconductor layer 18. In step S3e, the p-type electrode 16 is formed on the entire surface 18a of the semiconductor layer 18 by, for example, vapor deposition, and the p-type on the first region of the surface 18a of the semiconductor layer 18 is used. It may include removing the electrode 16 by etching to form the through hole 57.

(Embodiment 6)
With reference to FIG. 28, the light emitting module 1g which concerns on Embodiment 6 is demonstrated. The light emitting module 1g of the present embodiment has the same configuration as the light emitting module 1 of the first embodiment, but is mainly different in the following points.

  The light emitting module 1g of the present embodiment may further include a pump 66 and a pipe 67 arranged outside the package (30, 60). The pipe 67 connects the internal space of the package (30, 60) in which the liquid 62 is stored and the pump 66. The pump 66 and the pipe 67 are configured so that the liquid 62 circulates through the internal space of the package (30, 60) and the pipe 67. The pump 66 discharges the liquid 62 in the inner space of the package (30, 60) from one end of the base 30. The liquid 62 discharged from one end of the base 30 is cooled. The cooled liquid 62 is injected from the other end of the base 30 into the inner space of the package (30, 60).

  The light emitting module 1g of the present embodiment has the following effects in addition to the effects of the light emitting module 1 of the first embodiment.

  The light emitting module 1g of the present embodiment further includes a pump 66 and a pipe 67 arranged outside the package (30, 60). The pipe 67 connects the internal space of the package (30, 60) in which the liquid 62 is stored and the pump 66. The pump 66 and the pipe 67 are configured so that the liquid 62 circulates through the internal space of the package (30, 60) and the pipe 67. The pump 66 discharges the liquid 62 in the inner space of the package (30, 60). The discharged liquid 62 is cooled. The pump 66 injects the cooled liquid 62 into the inner space of the package (30, 60). Therefore, the temperature of the liquid 62 is further suppressed from increasing while the semiconductor light emitting element 10 emits the deep ultraviolet light 19. According to the light emitting module 1g of the present embodiment, the output of the deep ultraviolet light 19 emitted from the light emitting module 1g can be further increased. The light emitting module 1g of the present embodiment has a long life and high reliability.

  Embodiment 1-6 disclosed this time should be considered as illustrative in all points and not restrictive. As long as there is no contradiction, at least two of Embodiments 1-6 disclosed this time may be combined. For example, the light emitting modules 1 and 1g in the first and sixth embodiments may include any one of the semiconductor light emitting elements 10b to 10e in the second to fifth embodiments instead of the semiconductor light emitting element 10. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  1, 1g Light emitting module 10, 10b, 10c, 10d, 10e Semiconductor light emitting device, 11 substrate, 11a first main surface, 11b second main surface, 12 n-type semiconductor layer, 13 active region, 14 p-type semiconductor Layer, 14a first p-type semiconductor layer, 14b second p-type semiconductor layer, 15 n-type electrode, 16 p-type electrode, 17 periodic uneven structure, 17a, 17b protrusion, 18 semiconductor layer, 18a surface, 19 Deep ultraviolet light, 20 submount, 21 first conductive pad, 22 second conductive pad, 25 bonding member, 30 base, 33, 34 conductive wire, 35 insulating layer, 36, 38 conductive pad, 37, 39 electricity Wiring, 41 first layer, 41a third recess, 42 second layer, 42a second recess, 43 third layer, 43a first recess, 43b remaining film, 45 mold, 46 light, 47 4th layer, 47a 1st part, 47b 2nd part, 48 columnar structure, 50 microstructure, 55 dislocation defect, 57 through-hole, 60 transparent member, 62 liquid, 66 pump, 67 piping.

Claims (15)

A substrate having a first main surface and a second main surface opposite to the first main surface;
A semiconductor layer provided on the first main surface, the semiconductor layer including an active region configured to emit deep ultraviolet light, and
A periodic concavo-convex structure formed on the second main surface, the periodic concavo-convex structure including a plurality of protrusions protruding from the second main surface;
The first area of the active region in the second plan view of the second main surface is 0.15 mm ² or more;
The third of the plurality of protrusions in the second plan view of the second main surface with respect to the second area of the second main surface in the second plan view of the second main surface. The area ratio is 60% or more and 100% or less,
The plurality of protrusions are semiconductor light emitting devices each having an aspect ratio of 0.6 or more. The semiconductor light emitting element according to claim 1, wherein the first area is 0.35 mm ² or more.   The semiconductor light emitting element according to claim 1, wherein the aspect ratio is 1.0 or more.   4. The semiconductor light emitting element according to claim 1, wherein the substrate is an aluminum nitride (AlN) substrate. 5.   5. The semiconductor light emitting element according to claim 1, wherein each of the plurality of protrusions has a cone shape or a pyramid shape.   5. The semiconductor light emitting element according to claim 1, wherein each of the plurality of protrusions has a truncated cone shape or a truncated pyramid shape. Further comprising one or more microstructures on the second major surface;
Each of the one or more microstructures has a smaller size than each of the plurality of protrusions;
7. The semiconductor light emitting element according to claim 1, wherein the one or more microstructures are arranged around one of the plurality of protrusions. 8. A p-type electrode is further provided on the surface of the semiconductor layer opposite to the substrate,
The semiconductor layer further includes an n-type semiconductor layer and a p-type semiconductor layer, the n-type semiconductor layer is provided on the substrate side with respect to the active region, and the p-type semiconductor layer is provided in the active region. On the opposite side to the substrate,
The p-type electrode is in contact with the p-type semiconductor layer;
The semiconductor layer includes dislocation defects extending from the n-type semiconductor layer to the p-type semiconductor layer;
The third aspect of the said surface of the said semiconductor layer WHEREIN: The said p-type electrode is arrange | positioned away from the part of the said dislocation defect nearest to the said surface of the said semiconductor layer. The semiconductor light emitting element of any one of Claims. The dislocation defect closest to the surface of the semiconductor layer in the third plan view of the surface of the semiconductor layer is further provided with an island-shaped insulating layer on the first region of the surface of the semiconductor layer. In the first region, and the island-like insulating layer is closest to the surface of the semiconductor layer in the third plan view of the surface of the semiconductor layer. Covering the part of
The semiconductor light emitting element according to claim 8, wherein the p-type electrode covers a second region on the surface of the semiconductor layer different from the first region and the island-shaped insulating layer. An electrode is further provided on the surface of the semiconductor layer opposite to the substrate,
8. The semiconductor light emitting element according to claim 1, wherein the electrode has a comb-teeth shape in a first plan view of the first main surface. 9. The semiconductor light-emitting element according to any one of claims 1 to 10,
A liquid for sealing the semiconductor light emitting element, the liquid is transparent to the deep ultraviolet light emitted from the semiconductor light emitting element, and
A light emitting module comprising: a package containing the semiconductor light emitting element and the liquid, wherein the package includes a transparent member transparent to the deep ultraviolet light emitted from the semiconductor light emitting element. A pump disposed outside the package;
A pipe connecting the internal space of the package in which the liquid is stored and the pump;
The light emitting module according to claim 11, wherein the pump and the pipe are configured so that the liquid circulates through the internal space of the package and the pipe. Forming a semiconductor layer on a first main surface of the substrate, the semiconductor layer including an active region configured to emit deep ultraviolet light, the side opposite to the first main surface The first area of the active region in the second plan view of the second main surface of the substrate is 0.15 mm ² or more, and
Forming a periodic concavo-convex structure on the second main surface, the periodic concavo-convex structure including a plurality of protrusions protruding from the second main surface, The ratio of the third area of the plurality of protrusions in the second plan view of the second main surface to the second area of the second main surface in the second plan view is 60% or more. 100% or less, each of the plurality of protrusions has an aspect ratio of 0.6 or more,
Forming the periodic concavo-convex structure includes laminating a first layer, a second layer, and a third layer in this order on the second main surface, A layer, the second layer, and the third layer are made of different materials, and the first layer has a larger thickness than each of the second layer and the third layer; ,
Forming a plurality of first recesses in the third layer by imprinting a mold having a concavo-convex pattern on the third layer;
Forming a plurality of second recesses in the second layer using the third layer in which the plurality of first recesses are formed;
Using the second layer in which the plurality of second recesses are formed as a mask, a part of the first layer is anisotropically etched, whereby a plurality of third recesses are formed in the first layer. Forming the second main surface of the substrate in the plurality of third recesses; and
Forming a fourth layer on the second main surface of the substrate exposed in the plurality of third recesses;
Forming a plurality of columnar structures on the second main surface by lifting off the first layer in which the plurality of third recesses are formed;
Etching the second main surface with the plurality of columnar structures to form the periodic concavo-convex structure on the second main surface. A method for manufacturing a semiconductor light emitting element. Identifying a position of a dislocation defect in a third plan view of the surface of the semiconductor layer opposite to the substrate, the semiconductor layer further including an n-type semiconductor layer and a p-type semiconductor layer, The n-type semiconductor layer is provided on the substrate side with respect to the active region, the p-type semiconductor layer is provided on the side opposite to the substrate with respect to the active region, and the dislocation defect is the n-type semiconductor layer. Extending from the p-type semiconductor layer to the p-type semiconductor layer;
forming a p-type electrode on the surface of the semiconductor layer away from the portion of the dislocation defect closest to the surface of the semiconductor layer in the third plan view of the surface of the semiconductor layer; The method of manufacturing a semiconductor light emitting element according to claim 13, wherein the p-type electrode is in contact with the p-type semiconductor layer. Forming the p-type electrode on the surface of the semiconductor layer away from the portion of the dislocation defect closest to the surface of the semiconductor layer in the third plan view of the surface of the semiconductor layer; An island-shaped insulating layer covering the portion of the dislocation defect closest to the surface of the semiconductor layer in the third plan view of the surface of the semiconductor layer on the first region of the surface of the semiconductor layer; Forming the p-type electrode on the second region of the surface of the semiconductor layer different from the first region, and
In the third plan view of the surface of the semiconductor layer, the portion of the dislocation defect closest to the surface of the semiconductor layer is present in the first region, and the surface of the surface of the semiconductor layer The method of manufacturing a semiconductor light emitting element according to claim 14, wherein the island-shaped insulating layer covers the portion of the dislocation defect closest to the surface of the semiconductor layer in the third plan view.

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