JP2018168358A - Polyimide film - Google Patents
Polyimide film Download PDFInfo
- Publication number
- JP2018168358A JP2018168358A JP2018049912A JP2018049912A JP2018168358A JP 2018168358 A JP2018168358 A JP 2018168358A JP 2018049912 A JP2018049912 A JP 2018049912A JP 2018049912 A JP2018049912 A JP 2018049912A JP 2018168358 A JP2018168358 A JP 2018168358A
- Authority
- JP
- Japan
- Prior art keywords
- polyimide film
- mol
- film
- double
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/088—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyamides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
- C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1075—Partially aromatic polyimides
- C08G73/1078—Partially aromatic polyimides wholly aromatic in the diamino moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2311/00—Metals, their alloys or their compounds
- B32B2311/12—Copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/08—PCBs, i.e. printed circuit boards
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/005—Additives being defined by their particle size in general
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/32—Phosphorus-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laminated Bodies (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Wire Bonding (AREA)
Abstract
【課題】両面銅張り積層板などに利用しうる新規なポリイミドフィルムを提供する。【解決手段】第1の態様では、無機粒子を含有するポリイミドフィルムにおいて、フィルムの一方の面aにおける高さ0.8μm以上の突起の割合をA個/100cm2、フィルムの他方の面bにおける高さ0.8μm以上の突起の割合をB個/100cm2とするとき、A及びBをいずれも10個以下とする。第2の態様では、無機粒子を含有するポリイミドフィルムにおいて、前記AとBとの差の絶対値を2以上としてもよい。【選択図】なしA novel polyimide film that can be used for a double-sided copper-clad laminate or the like is provided. In a first aspect, in a polyimide film containing inorganic particles, the ratio of protrusions having a height of 0.8 μm or more on one surface a of the film is A / 100 cm 2, and the height on the other surface b of the film is high. When the ratio of the protrusions having a thickness of 0.8 μm or more is B / 100 cm 2, both A and B are 10 or less. In the second aspect, in the polyimide film containing inorganic particles, the absolute value of the difference between A and B may be 2 or more. [Selection diagram] None
Description
本発明は、ポリイミドフィルムに関する。 The present invention relates to a polyimide film.
電子機器の小型化、軽量化、高機能化に従ってIC、LSI等の電子部品を実装するプリント配線板は小さいスペースでより高密度の配線が要求される様になり、これに対応するため、ICをフレキシブル配線板に直接実装するCOF(Chip On Film)方式が開発され、実用化されてきた。
近年、その傾向は特に液晶テレビやノートパソコン、スマートフォン等のディスプレイを駆動するICの実装において顕著で、ディスプレイの高精細化、モバイル機器の薄型化、高機能化に伴い、更なる高密度実装を実現するための微細配線化や、配線を両面に施した両面COF等の実装方式の改良が進んでいる。
Printed wiring boards for mounting electronic components such as ICs and LSIs are becoming more and more demanding in a small space as electronic devices become smaller, lighter, and more functional. A COF (Chip On Film) method has been developed and put into practical use.
In recent years, the trend has been particularly noticeable in the mounting of ICs that drive displays such as LCD TVs, laptop computers, and smartphones. With the increase in display definition, mobile devices becoming thinner, and higher functionality, higher density mounting has been achieved. Improvement of mounting methods such as miniaturization wiring for realizing and double-sided COF with wiring on both sides is progressing.
COFに用いられる銅張り積層板には、配線の微細化への対応が可能な、ポリイミドフィルム上に銅層を直接形成し接着剤を用いない2層タイプが採用されている。これには、フィルム上にスパッタ・めっき法により銅層を形成させる方法、銅箔上にポリアミド酸をキャストした後イミド化させる方法があるが、銅層の薄膜化が容易で微細配線に有利なスパッタ・めっき法による2層銅張り積層板が主流となっている。 As the copper-clad laminate used for COF, a two-layer type in which a copper layer is directly formed on a polyimide film and does not use an adhesive, which can cope with the miniaturization of wiring, is employed. There are a method of forming a copper layer on a film by sputtering and plating, and a method of imidizing after casting a polyamic acid on a copper foil. However, the copper layer can be easily made thin and advantageous for fine wiring. Two-layer copper-clad laminates by sputtering / plating are the mainstream.
COF用基板の微細配線の形成は、銅張り積層板の銅層の表面にフォトレジスト層を設け、このフォトレジスト層を露光・現像して所望のパターンを形成し、このパターンをマスキング材として、銅層を選択的にエッチングする方式(サブトラクティブ法)が用いられている。しかし、この方法では配線ピッチを小さく[例えば、25μm(例えば、ライン幅12μm、スペース幅13μm)より小さく]することが困難であり、一部最先端機種への対応が難しくなってきている。 The fine wiring of the COF substrate is formed by providing a photoresist layer on the surface of the copper layer of the copper-clad laminate, exposing and developing the photoresist layer to form a desired pattern, and using this pattern as a masking material. A method of selectively etching the copper layer (subtractive method) is used. However, with this method, it is difficult to reduce the wiring pitch [for example, smaller than 25 μm (for example, smaller than line width 12 μm, space width 13 μm)], and it is difficult to cope with some of the most advanced models.
近年、これに代わる方法として、絶縁基板の表面に基材金属層を形成し、この基材金属層の表面にフォトレジスト層を設け、このフォトレジスト層に所望のパターンを形成し、露出した基材金属層に導電性金属を電解析出させて配線パターンを形成する方式(セミアディティブ法)が着目されている。この方式によれば、小さい(例えば、20μm以下の)配線ピッチも形成でき、更なる高密度実装が可能となる。 In recent years, as an alternative method, a base metal layer is formed on the surface of an insulating substrate, a photoresist layer is provided on the surface of the base metal layer, a desired pattern is formed on the photoresist layer, and an exposed substrate is formed. Attention has been focused on a method (semi-additive method) in which a conductive metal is electrolytically deposited on a metal layer to form a wiring pattern. According to this method, a small wiring pitch (for example, 20 μm or less) can be formed, and further high-density mounting is possible.
これらの技術動向において、2層銅張り積層板に用いられるポリイミドフィルムに対する特性、品質の要求もますます高度化している。例えば、COFはICやパネルと実装後、コンパクトに折り曲げて電子機器に搭載されるが、配線が微細化することにより、配線に割れ(クラック)が生じ易くなるため、耐クラック性も要求されるようになった。
これらに対応するため、例えば、ポリイミドフィルムの表面に接着剤を介することなくニッケル合金からなる下地金属層と、前記下地金属層の表面に銅層を備える積層構造の配線をセミアディティブ法で形成するフレキシブル配線板の製造方法において、銅層の結晶配向を規定した提案がなされている(特許文献1)。
In these technical trends, the characteristics and quality requirements for polyimide films used for two-layer copper-clad laminates are becoming increasingly sophisticated. For example, a COF is mounted on an electronic device after being mounted with an IC or panel, and is mounted on an electronic device. However, since the wiring is likely to be cracked, crack resistance is also required. It became so.
In order to cope with these, for example, a base metal layer made of a nickel alloy is formed on the surface of the polyimide film without using an adhesive, and a wiring having a laminated structure including a copper layer on the surface of the base metal layer is formed by a semi-additive method. In the manufacturing method of a flexible wiring board, the proposal which prescribed | regulated the crystal orientation of a copper layer is made | formed (patent document 1).
本発明の目的は、新規なポリイミドフィルムを提供することにある。 An object of the present invention is to provide a novel polyimide film.
前記のように、COFについて様々な検討がなされているが、本発明者によれば、さらなる検討・改善の余地があることがわかった。
例えば、両面に配線を施した両面COFにおいては、折り曲げ内面の配線は外面の配線よりも折り曲げ角度が小さくなり、配線の微細化と相まって、配線のクラックの問題が発生しやすくなった。これに対応するためには、特許文献1のように、銅層を改良すれば足りるものではなく、ポリイミドフィルムにおいても改善が必要であると考えられる。
As described above, various studies have been made on COF, but the present inventors have found that there is room for further study and improvement.
For example, in a double-sided COF with wiring on both sides, the folding angle of the inner wiring is smaller than that of the outer wiring, and the problem of wiring cracking is likely to occur in conjunction with the miniaturization of the wiring. In order to cope with this, it is not sufficient to improve the copper layer as in Patent Document 1, and it is considered that the polyimide film needs to be improved.
また、微細配線化が進むと、銅層表面の品位、ポリイミドフィルム表面の品位要求も高くなり、従来よりも微細な異物や欠陥が配線形成収率に影響を与えることになる。さらにセミアディティブ方式の配線形成に使用される銅張り積層板は、従来のサブトラクティブ方式に使用する銅張り積層板にくらべ、その銅層の厚みが3分の1以下(1〜3μm)の積層板を用いることが多いため、ポリイミドフィルムの表面には、より高品位が求められる。 In addition, as fine wiring progresses, the quality of the copper layer surface and the quality of the polyimide film surface become higher, and finer foreign matters and defects than before will affect the wiring formation yield. Furthermore, copper-clad laminates used for semi-additive wiring formation are laminated with a copper layer thickness of 1/3 or less (1-3 μm) compared to copper-clad laminates used in conventional subtractive methods. Since a plate is often used, higher quality is required on the surface of the polyimide film.
本発明者は、このような観点から、種々の検討を試みたが、十分な性能を充足させるには困難を極めた。例えば、ポリイミドフィルム表面を平滑にするなどを試みたものの、単純にこのような試みを行うだけでは、フィルム同士の滑り性が悪くなり、取り扱い性が低下するばかりでなく、フィルム搬送時や巻き取り時にキズやシワが発生し易くなり、フィルム表面品位を却って悪化する場合などがあった。 The present inventor tried various studies from such a viewpoint, but it was extremely difficult to satisfy sufficient performance. For example, while trying to smooth the polyimide film surface, etc., simply doing such an attempt will not only reduce the slipperiness between films, but also reduce the handleability, as well as during film transport and winding. Occasionally, scratches and wrinkles are likely to occur, and the film surface quality may be deteriorated.
このような中、本発明者は、鋭意研究を重ねた結果、無機粒子を含むポリイミドフィルムにおいて、フィルムの両面に着目し、両面における突起割合等を調整することで、取扱性に優れるポリイミドフィルムや、両面COF等に好適なポリイミドフィルムが得られることなどを見出し、さらなる検討を重ねて本発明を完成した。 In such circumstances, the present inventors, as a result of earnest research, in the polyimide film containing inorganic particles, paying attention to both sides of the film, adjusting the protrusion ratio etc. on both sides, polyimide film excellent in handleability and The inventors have found that a polyimide film suitable for double-sided COF and the like can be obtained, and have further studied and completed the present invention.
すなわち、本発明は、以下の発明等に関する。
[1]
無機粒子を含有するポリイミドフィルムであって、フィルムの一方の面aにおける高さ0.8μm以上の突起の割合をA個/100cm2、フィルムの他方の面bにおける高さ0.8μm以上の突起の割合をB個/100cm2とするとき、A及びBがいずれも10個以下であるポリイミドフィルム(例えば、両面COF用ポリイミドフィルム)。
[2]
無機粒子を含有するポリイミドフィルムであって、フィルムの一方の面aにおける高さ0.8μm以上の突起の割合をA個/100cm2、フィルムの他方の面bにおける高さ0.8μm以上の突起の割合をB個/100cm2とするとき、AとBとの差の絶対値が2以上であるポリイミドフィルム(例えば、両面COF用ポリイミドフィルム)。
[3]
A及び/又はBが2個以上である[1]又は[2]に記載のポリイミドフィルム。
[4]
面a及び面bの両面において、表面粗さRaが0.01〜0.05μm、表面粗さRzが0.05〜0.6μmである[1]〜[3]のいずれかに記載のポリイミドフィルム。
[5]
MD方向の熱膨張係数が4〜10ppm/℃であり、TD方向の熱膨張係数が0〜8ppm/℃である[1]〜[4]のいずれかに記載のポリイミドフィルム。
[6]
引張弾性率5〜10GPa及び/又はループスティフネス10〜75mN/cmを充足する[1]〜[5]のいずれかに記載のポリイミドフィルム。
[7]
パラフェニレンジアミンを含む芳香族ジアミン成分、及び酸無水物成分を重合成分とするポリイミドで構成されている[1]〜[6]のいずれかに記載のポリイミドフィルム。
[8]
無機粒子の平均粒径が0.05〜0.5μmである[1]〜[7]のいずれかに記載のポリイミドフィルム。
[9]
[1]〜[8]のいずれかに記載のポリイミドフィルムを用いた金属積層板(特に両面銅張り積層板)。
[10]
銅厚みが1〜3μmである[9]記載の金属積層板(特に両面銅張り積層板)。
[11]
[9]又は[10]記載の金属積層板(特に両面銅張り積層板)を用いた両面COF用基板。
[12]
[9]又は[10]記載の金属積層板(特に両面銅張り積層板)を用いて、セミアディティブ法により両面COF用基板を製造する方法。
That is, the present invention relates to the following inventions and the like.
[1]
A polyimide film containing inorganic particles, the ratio of protrusions having a height of 0.8 μm or more on one surface a of the film being A / 100 cm 2 , and protrusions having a height of 0.8 μm or more on the other surface b of the film When the ratio is B / 100 cm 2 , a polyimide film in which A and B are both 10 or less (for example, a polyimide film for double-sided COF).
[2]
A polyimide film containing inorganic particles, the ratio of protrusions having a height of 0.8 μm or more on one surface a of the film being A / 100 cm 2 , and protrusions having a height of 0.8 μm or more on the other surface b of the film When the ratio is B / 100 cm 2 , a polyimide film (for example, a polyimide film for double-sided COF) in which the absolute value of the difference between A and B is 2 or more.
[3]
The polyimide film according to [1] or [2], wherein A and / or B is 2 or more.
[4]
The polyimide according to any one of [1] to [3], wherein the surface roughness Ra is 0.01 to 0.05 μm and the surface roughness Rz is 0.05 to 0.6 μm on both surfaces a and b. the film.
[5]
The polyimide film according to any one of [1] to [4], wherein a thermal expansion coefficient in the MD direction is 4 to 10 ppm / ° C, and a thermal expansion coefficient in the TD direction is 0 to 8 ppm / ° C.
[6]
The polyimide film according to any one of [1] to [5], which satisfies a tensile elastic modulus of 5 to 10 GPa and / or a loop stiffness of 10 to 75 mN / cm.
[7]
The polyimide film in any one of [1]-[6] comprised with the polyimide which uses the aromatic diamine component containing paraphenylenediamine, and an acid anhydride component as a polymerization component.
[8]
The polyimide film according to any one of [1] to [7], wherein the average particle diameter of the inorganic particles is 0.05 to 0.5 μm.
[9]
[1] to [8] A metal laminate using the polyimide film according to any one of [8] (particularly a double-sided copper-clad laminate).
[10]
[9] The metal laminated board (especially double-sided copper clad laminated board) whose copper thickness is 1-3 micrometers.
[11]
[9] A substrate for double-sided COF using the metal laminated plate (especially double-sided copper-clad laminate) according to [10].
[12]
A method for producing a double-sided COF substrate by a semi-additive method using the metal laminated plate (especially a double-sided copper-clad laminate) according to [9] or [10].
本発明では、新規なポリイミドフィルムを得ることができる。特に、本発明では、寸法安定性、折り曲げ特性、フィルム両面における表面平滑性などのバランスに優れるポリイミドフィルムを提供することもできる。 In the present invention, a novel polyimide film can be obtained. In particular, the present invention can also provide a polyimide film having an excellent balance of dimensional stability, folding characteristics, surface smoothness on both sides of the film, and the like.
このようなポリイミドフィルムは、例えば、COF(Chip On Film)用などに好適である。特に、高密度実装を目的に両面に配線を施した両面COFなどのファインピッチ回路基板や半導体パッケージに好適に用いることができる。 Such a polyimide film is suitable, for example, for COF (Chip On Film). In particular, it can be suitably used for fine pitch circuit boards and semiconductor packages such as double-sided COF with wiring on both sides for the purpose of high-density mounting.
[ポリイミドフィルム]
本発明のポリイミドフィルムでは、フィルムの両面において、特定の突起の割合が調整されている。
[Polyimide film]
In the polyimide film of the present invention, the ratio of specific protrusions is adjusted on both surfaces of the film.
まず、第1の態様では、ポリイミドフィルムにおいて、フィルムの一方の面aにおける高さ0.8μm以上の突起の割合をA個/100cm2(100cm2あたりA個)、フィルムの他方の面bにおける高さ0.8μm以上の突起の割合をB個/100cm2(100cm2あたりB個)とするとき、A及びBが、それぞれ、20個以下(例えば、18個以下)、好ましくは15個以下(例えば、12個以下)、さらに好ましくは10個以下(例えば、9個以下、8個以下)である。 First, in the first aspect, in the polyimide film, the ratio of protrusions having a height of 0.8 μm or more on one side a of the film is A / 100 cm 2 (A per 100 cm 2 ), and the other side b of the film is When the ratio of protrusions having a height of 0.8 μm or more is B / 100 cm 2 (B per 100 cm 2 ), A and B are each 20 or less (for example, 18 or less), preferably 15 or less. (For example, 12 or less), more preferably 10 or less (for example, 9 or less, 8 or less).
なお、突起の割合A及びBの下限値は、特に限定されないが、例えば、それぞれ、0個であってもよく、有限値(1個、2個など)であってもよい。 The lower limit values of the protrusion ratios A and B are not particularly limited, but may be, for example, 0 or a finite value (1, 2, etc.), respectively.
このように、フィルム両面において、特定の突起の割合を抑えることで、ピンホールのような欠損を効率よく抑えやすい。そのため、このようなフィルムは、収率を向上させやすく、両面に銅のような金属層を設けるためのフィルムなどとして好適である。なお、本発明者の検討によれば、意外なことに、突起の中でも、0.8μm以上の突起とピンホールのような欠損との相関が高いようである。 Thus, it is easy to efficiently suppress defects such as pinholes by suppressing the ratio of specific protrusions on both sides of the film. Therefore, such a film is easy to improve the yield and is suitable as a film for providing a metal layer such as copper on both sides. According to the study by the present inventor, surprisingly, among the protrusions, there seems to be a high correlation between the protrusions of 0.8 μm or more and defects such as pinholes.
本発明の第2の態様では、ポリイミドフィルムにおいて、前記Aと前記Bとの差の絶対値が1以上、好ましくは2以上(例えば、3以上)である。
なお、AとBとの差の絶対値の上限値は、特に限定されないが、例えば、30、25、20、18、16、14、12、10、9、8、7、6などであってもよい。
In the second aspect of the present invention, in the polyimide film, the absolute value of the difference between A and B is 1 or more, preferably 2 or more (for example, 3 or more).
The upper limit of the absolute value of the difference between A and B is not particularly limited. For example, 30, 25, 20, 18, 16, 14, 12, 10, 9, 8, 7, 6, etc. Also good.
このように、フィルム両面における特定の突起の割合に偏りを持たせることで、フィルムの面aと面bの間での十分な滑り性を担保しやすいためか、フィルム製造時にロール状に巻き取る場合などにおいて、優れた取扱性のフィルムを効率よく得やすい。また、このような優れた取扱性にも関連してか、フィルムにキズやシワなどが生じにくく、フィルムに配線を効率よく形成しやすい(高収率で配線を形成しやすい)。 Thus, it is easy to ensure sufficient slipperiness between the surface a and the surface b of the film by giving a bias to the ratio of specific protrusions on both surfaces of the film, or it is wound up in a roll shape during film production. In some cases, it is easy to efficiently obtain a film having excellent handleability. Also, in relation to such excellent handling properties, scratches and wrinkles are not easily generated on the film, and it is easy to efficiently form wiring on the film (easy to form wiring with high yield).
本発明のポリイミドフィルムは、第1の態様及び第2の態様の少なくとも1つの態様を充足すればよく、より好ましくは両態様を充足してもよい。 The polyimide film of this invention should just satisfy at least 1 aspect of a 1st aspect and a 2nd aspect, More preferably, you may satisfy both aspects.
なお、第1の態様及び/又は第2の態様において、A及びBの少なくとも一方(A及び/又はB)が、有限値[例えば、1個以上、好ましくは2個以上(例えば、2〜10個、2〜8個、3〜7個)など]であってもよい。あえて少なくともいずれかの面に突起を形成することで、良好な配線形成や取扱性などのバランスに優れたフィルムを得やすい。 In the first aspect and / or the second aspect, at least one of A and B (A and / or B) is a finite value [for example, one or more, preferably two or more (for example, 2 to 10). , 2-8, 3-7, etc.)]. Darely forming protrusions on at least one of the surfaces makes it easy to obtain a film having a good balance of good wiring formation and handleability.
本発明のポリイミドフィルムは、所定の表面粗度を有していてもよい。例えば、ポリイミドフィルムのRa(中心線平均粗さ)は、例えば、0.01〜0.05μm、0.01〜0.04μm程度であってもよい。また、ポリイミドフィルムのRz(10点平均粗さ)は、0.05〜0.6μm、好ましくは0.1〜0.5μmであってもよい。 The polyimide film of the present invention may have a predetermined surface roughness. For example, the Ra (center line average roughness) of the polyimide film may be, for example, about 0.01 to 0.05 μm and about 0.01 to 0.04 μm. The Rz (10-point average roughness) of the polyimide film may be 0.05 to 0.6 μm, preferably 0.1 to 0.5 μm.
なお、このような表面粗度は、フィルムの面a及び面bのいずれか一方において充足してもよく、面a及び面bにおいて充足してもよい。 In addition, such surface roughness may be satisfied in any one of the surface a and the surface b of a film, and may be satisfied in the surface a and the surface b.
このような表面粗度を有するポリイミドフィルム(特に、このような表面粗度と前記第1及び/又は第2の態様とを組み合わせて充足するポリイミドフィルム)によれば、銅層などの抜け(ピンホール)が発生しにくくなり、収率を向上させやすい。また、フィルムの加工や銅張り積層板の作成などの際に、十分なフィルムの滑り性を担保しやすいためか、搬送不良が発生したり、フィルム表面に収率を低下させるキズの発生を極力おさえやすいようであり、良好なフィルムを得やすい。 According to the polyimide film having such a surface roughness (particularly, a polyimide film satisfying a combination of such a surface roughness and the first and / or the second aspect) Hole) is less likely to occur and the yield is easily improved. In addition, when processing films or creating copper-clad laminates, it is easy to ensure sufficient film slipperiness, which may result in poor transport or scratches that reduce the yield on the film surface. It seems to be easy to hold down and it is easy to obtain a good film.
本発明のポリイミドフィルムは、特定の熱膨張係数を有していてもよい。例えば、ポリイミドフィルムの熱膨張係数は、MD方向(機械搬送方向、縦方向、流れ方向)において、4〜10ppm/℃、好ましくは3.5〜9ppm/℃、さらに好ましくは3〜8ppm/℃程度であってもよく、TD方向(幅方向、横方向、直角方向)において、0〜8ppm/℃、好ましくは0〜6ppm/℃、さらに好ましくは0.5〜5ppm/℃程度であってもよい。 The polyimide film of the present invention may have a specific thermal expansion coefficient. For example, the thermal expansion coefficient of the polyimide film is 4 to 10 ppm / ° C., preferably 3.5 to 9 ppm / ° C., more preferably about 3 to 8 ppm / ° C. in the MD direction (machine transport direction, longitudinal direction, flow direction). It may be 0 to 8 ppm / ° C., preferably 0 to 6 ppm / ° C., more preferably about 0.5 to 5 ppm / ° C. in the TD direction (width direction, lateral direction, right angle direction). .
熱膨張係数をこのような範囲とすることで、半導体やガラスパネルとの実装時に接合不良が発生しにくくなり、ファインピッチ回路基板や半導体パッケージ用途等においてより好適なフィルムとしやすい。 By setting the thermal expansion coefficient in such a range, it becomes difficult for bonding failure to occur at the time of mounting with a semiconductor or a glass panel, and it is easy to obtain a film more suitable for fine pitch circuit boards and semiconductor package applications.
本発明のポリイミドフィルムの引張弾性率は、5GPa以上(例えば、5〜10GPa)であることが好ましく、MDが6〜8GPa、TDが7〜10GPaであればなお好ましい。このような引張弾性率は、フィルムのMD方向及び/又はTD方向において充足してもよく、特にMD方向及びTD方向の両方において充足してもよい。 The tensile modulus of the polyimide film of the present invention is preferably 5 GPa or more (for example, 5 to 10 GPa), more preferably MD is 6 to 8 GPa, and TD is 7 to 10 GPa. Such tensile elastic modulus may be satisfied in the MD direction and / or TD direction of the film, and may be satisfied particularly in both the MD direction and the TD direction.
本発明のポリイミドフィルムのループスティフネスは、10〜75mN/cmであることが好ましく、更には、10〜65mN/cmであることがより好ましい。 The loop stiffness of the polyimide film of the present invention is preferably 10 to 75 mN / cm, and more preferably 10 to 65 mN / cm.
本発明のポリイミドフィルムは、通常、無機粒子(又はフィラー)を含む。このような無機粒子としては特に限定されず、例えば、酸化チタン、シリカ、炭酸カルシウム、リン酸カルシウム、リン酸水素カルシウムなどが挙げられる。 The polyimide film of the present invention usually contains inorganic particles (or fillers). Such inorganic particles are not particularly limited, and examples thereof include titanium oxide, silica, calcium carbonate, calcium phosphate, and calcium hydrogen phosphate.
無機粒子の平均粒径は、例えば、0.01〜5μm、好ましくは0.02〜2μm(例えば、0.03〜1μm)、さらに好ましくは0.05〜0.5μm程度であってもよい。
なお、無機粒子の平均粒径は、例えば、DMAc(N,N−ジメチルアセトアミド)中に分散させたスラリー状態において、堀場製作所製レーザー回折/錯乱式粒子径分布測定装置LA−920にて測定した粒度分布において、メジアン径を平均粒径として定義される。
The average particle diameter of the inorganic particles is, for example, 0.01 to 5 μm, preferably 0.02 to 2 μm (for example, 0.03 to 1 μm), and more preferably about 0.05 to 0.5 μm.
The average particle size of the inorganic particles was measured with a laser diffraction / confusion type particle size distribution measuring apparatus LA-920 manufactured by Horiba, Ltd. in a slurry state dispersed in DMAc (N, N-dimethylacetamide), for example. In the particle size distribution, the median diameter is defined as the average particle diameter.
無機粒子の含有量は、本発明の効果を妨げない限り特に限定されないが、例えば、ポリイミドフィルムに対して、0.05質量%以上、好ましくは0.1〜1.5質量%、さらに好ましくは0.3〜1.0質量%であってもよい。 The content of the inorganic particles is not particularly limited as long as the effect of the present invention is not hindered. For example, the content of the inorganic particles is 0.05% by mass or more, preferably 0.1 to 1.5% by mass, more preferably, with respect to the polyimide film. 0.3-1.0 mass% may be sufficient.
(ポリイミド及びポリイミドフィルムの製造方法)
ポリイミドフィルム(又はポリイミドフィルムを構成するポリイミド、又はポリアミック酸)は、通常、芳香族ジアミン成分と酸無水物成分(テトラカルボン酸成分)とを重合成分とする。なお、重合成分は、芳香族ジアミン成分と酸無水物成分を主成分とする限り、他の重合成分を含んでいてもよい。
ポリイミドフィルムを製造するに際しては、特に限定されないが、まず、芳香族ジアミン成分と酸無水物成分とを有機溶媒中で重合させることにより、ポリアミック酸(ポリアミド酸)溶液を得る。
(Manufacturing method of polyimide and polyimide film)
The polyimide film (or polyimide constituting the polyimide film or polyamic acid) usually has an aromatic diamine component and an acid anhydride component (tetracarboxylic acid component) as polymerization components. The polymerization component may contain other polymerization components as long as the main component is an aromatic diamine component and an acid anhydride component.
Although it does not specifically limit when manufacturing a polyimide film, First, a polyamic acid (polyamic acid) solution is obtained by polymerizing an aromatic diamine component and an acid anhydride component in an organic solvent.
本発明のポリイミドフィルムは、芳香族ジアミン成分として、特に、パラフェニレンジアミンを好適に含んでいてもよい。このようにパラフェニレンジアミンを含む芳香族ジアミン成分を使用することで、前記のような特性・物性を有するポリイミドフィルムを効率よく得やすい。
芳香族ジアミン成分は、パラフェニレンジアミン以外のものを含んでいてもよい。このようなパラフェニレンジアミン以外の前記芳香族ジアミン成分の具体例としては、メタフェニレンジアミン、ベンジジン、パラキシリレンジアミン、4,4’−ジアミノジフェニルエーテル、3,4’−ジアミノジフェニルエーテル、4,4’−ジアミノジフェニルメタン、4,4’−ジアミノジフェニルスルホン、3,3’−ジメチル−4,4’−ジアミノジフェニルメタン、1,5−ジアミノナフタレン、3,3’−ジメトキシベンジジン、1,4−ビス(3−メチル−5−アミノフェニル)ベンゼン及びこれらのアミド形成性誘導体が挙げられる。これらは、1種単独で使用してもよく、2種以上を混合して用いてもよい。
芳香族ジアミン成分としては、パラフェニレンジアミンと、4,4’−ジアミノジフェニルエーテル及び/又は3,4’−ジアミノジフェニルエーテルとの組み合わせが好ましい。この中でフィルムの引張弾性率を高くする効果のあるパラフェニレンジアミン、3,4’−ジアミノジフェニルエーテルのジアミン成分の量を調整し、得られるポリイミドフィルムの引張弾性率を5GPa以上にすることが、搬送性も良くなるので好ましい。
In particular, the polyimide film of the present invention may suitably contain paraphenylenediamine as the aromatic diamine component. Thus, by using the aromatic diamine component containing paraphenylene diamine, it is easy to efficiently obtain a polyimide film having the above characteristics and properties.
The aromatic diamine component may contain things other than paraphenylenediamine. Specific examples of the aromatic diamine component other than such paraphenylenediamine include metaphenylenediamine, benzidine, paraxylylenediamine, 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 4,4 ′. -Diaminodiphenylmethane, 4,4'-diaminodiphenylsulfone, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 1,5-diaminonaphthalene, 3,3'-dimethoxybenzidine, 1,4-bis (3 -Methyl-5-aminophenyl) benzene and their amide-forming derivatives. These may be used individually by 1 type, and 2 or more types may be mixed and used for them.
As the aromatic diamine component, a combination of paraphenylenediamine and 4,4′-diaminodiphenyl ether and / or 3,4′-diaminodiphenyl ether is preferable. In this, adjusting the amount of diamine component of paraphenylenediamine and 3,4'-diaminodiphenyl ether, which have the effect of increasing the tensile modulus of the film, and setting the tensile modulus of the resulting polyimide film to 5 GPa or more, It is preferable because the transportability is improved.
前記酸無水物成分の具体例としては、ピロメリット酸、3,3’,4,4’−ジフェニルテトラカルボン酸、2,3’,3,4’−ジフェニルテトラカルボン酸、3,3’,4,4’−ベンゾフェノンテトラカルボン酸、2,3,6,7−ナフタレンテトラカルボン酸、2,2−ビス(3,4−ジカルボキシフェニル)エーテル、ピリジン−2,3,5,6−テトラカルボン酸及びこれらのアミド形成性誘導体等の芳香族テトラカルボン酸無水物成分が挙げられ、ピロメリット酸二無水物、3,3’,4,4’−ジフェニルテトラカルボン酸二無水物が好ましい。これらは、1種単独で使用してもよく、2種以上を混合して用いてもよい。 Specific examples of the acid anhydride component include pyromellitic acid, 3,3 ′, 4,4′-diphenyltetracarboxylic acid, 2,3 ′, 3,4′-diphenyltetracarboxylic acid, 3,3 ′, 4,4′-benzophenonetetracarboxylic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 2,2-bis (3,4-dicarboxyphenyl) ether, pyridine-2,3,5,6-tetra Aromatic tetracarboxylic anhydride components such as carboxylic acid and amide-forming derivatives thereof can be mentioned, and pyromellitic dianhydride and 3,3 ′, 4,4′-diphenyltetracarboxylic dianhydride are preferable. These may be used individually by 1 type, and 2 or more types may be mixed and used for them.
この中でも、特に好適な、芳香族ジアミン成分及び酸無水物成分の組み合わせとしては、パラフェニレンジアミン、4,4’−ジアミノジフェニルエーテル及び3,4’−ジアミノジフェニルエーテルからなる群から選ばれる1種以上の芳香族ジアミン成分と、ピロメリット酸二無水物及び3,3’,4,4’−ジフェニルテトラカルボン酸二無水物からなる群から選ばれる1種以上の酸無水物成分との組み合わせが挙げられる。 Among these, a particularly preferred combination of the aromatic diamine component and the acid anhydride component is one or more selected from the group consisting of paraphenylenediamine, 4,4′-diaminodiphenyl ether and 3,4′-diaminodiphenyl ether. Examples include a combination of an aromatic diamine component and one or more acid anhydride components selected from the group consisting of pyromellitic dianhydride and 3,3 ′, 4,4′-diphenyltetracarboxylic dianhydride. .
前記した芳香族ジアミン成分におけるパラフェニレンジアミンの配合割合は、前記範囲の熱膨張係数を得るとともに、フィルムに適切な強度を与え、走行性不良を防ぐ等の点から、芳香族ジアミン成分全量に対して、15モル%以上(例えば、18モル%以上)の範囲から選択してもよく、通常20モル%以上(例えば、25モル%以上)、好ましくは30モル%以上(例えば、31モル%以上、32モル%以上)であり、33モル%以上が好ましく、35モル%以上がより好ましい。
芳香族ジアミン成分におけるパラフェニレンジアミンの割合の上限値は、例えば、100モル%であってもよく、特に100モル%未満[例えば、99モル%、95モル%、90モル%、80モル%、70モル%、60モル%以下(例えば、60モル%、55モル%、52モル%、50モル%、48モル%、45モル%など)など]であってもよい。
代表的には、芳香族ジアミン成分におけるパラフェニレンジアミン成分の割合は、芳香族ジアミン成分全量に対して、15〜80モル%(例えば、18〜75モル%)、20〜75モル%(例えば、25〜70モル%)、30〜65モル%(例えば、32〜60モル%、30〜55モル%(例えば、32〜50モル%)などであってもよい。
また、芳香族ジアミン成分が、4,4’−ジアミノジフェニルエーテル及び/又は3,4’−ジアミノジフェニルエーテル(特に4,4’−ジアミノジフェニルエーテル)を含む場合、芳香族ジアミン成分における4,4’−ジアミノジフェニルエーテル及び/又は3,4’−ジアミノジフェニルエーテルの割合は、芳香族ジアミン成分全量に対して、例えば、85モル%以下(例えば、82モル%以下)の範囲から選択してもよく、好ましくは80モル%以下(例えば、78モル%以下)、さらに好ましくは75モル%以下(例えば、73モル%以下)であり、70モル%以下(例えば、68モル%以下、65モル%以下)であってもよい。
芳香族ジアミン成分における4,4’−ジアミノジフェニルエーテル及び/又は3,4’−ジアミノジフェニルエーテル(特に4,4’−ジアミノジフェニルエーテル)の割合の下限値は、特に限定されず、例えば、1モル%、5モル%、10モル%、15モル%、20モル%、30モル%、40モル%、45モル%、50モル%、52モル%、55モル%、60モル%などであってもよい。
代表的には、芳香族ジアミン成分における4,4’−ジアミノジフェニルエーテル及び/又は3,4’−ジアミノジフェニルエーテル(特に4,4’−ジアミノジフェニルエーテル)の割合は、芳香族ジアミン成分全量に対して、20〜85モル%(例えば、22〜82モル%)、25〜80モル%(例えば、30〜78モル%)、35〜75モル%(例えば、38〜72モル%)、40〜70モル%(例えば、45〜70モル%)、50〜68モル%などであってもよい。
前記した酸無水物成分における配合割合(モル比)としては、本発明の効果を妨げない限り特に限定されないが、例えば、3,3’,4,4’−ジフェニルテトラカルボン酸二無水物を含む場合、3,3’,4,4’−ジフェニルテトラカルボン酸二無水物の含有量は、酸無水物成分全量に対して、15モル%以上(例えば、18モル%以上)が好ましく、20モル%以上がより好ましく、25モル%以上がさらに好ましい。
酸無水物成分における3,3’,4,4’−ジフェニルテトラカルボン酸二無水物の割合の上限値は、100モル%であってもよく、特に100モル%未満(例えば、99モル%、95モル%、90モル%、85モル%、80モル%、70モル%、60モル%、50モル%、45モル%、42モル%、40モル%、38モル%、35モル%、33モル%など)であってもよい。
代表的には、酸無水物成分における3,3’,4,4’−ジフェニルテトラカルボン酸二無水物の割合は、酸無水物成分全量に対して、15〜85モル%(例えば、18〜70モル%)、18〜60モル%(例えば、18〜50モル%)、20〜40モル%であってもよい。
酸無水物成分がピロメリット酸二無水物を含む場合、ピロメリット酸二無水物の割合は、例えば、酸無水物成分全体に対して、15モル%以上(例えば、20モル%以上)、好ましくは25モル%以上(例えば、30モル%以上)、さらに好ましくは35モル%以上(例えば、40モル%以上)程度であってもよく、45モル%以上(例えば、48モル%以上、50モル%以上、55モル%以上、58モル%以上、60モル%以上、62モル%以上など)であってもよい。
酸無水物成分におけるピロメリット酸二無水物の割合の上限値は、特に限定されず、例えば、100モル%であってもよく、特に100モル%未満(例えば、95モル%、90モル%、85モル%、80モル%、82モル%、75モル%、72モル%など)であってもよい。
代表的には、酸無水物成分におけるピロメリット酸二無水物の割合は、酸無水物成分全量に対して、10〜95モル%(例えば、12〜90モル%)、15〜85モル%(例えば、20〜82モル%)、30〜85モル%(例えば、40〜82モル%)、50〜80モル%(例えば、60〜80モル%)などであってもよい。
このような芳香族ジアミン成分と酸無水物成分とで構成されたポリアミック酸をポリイミドフィルムの原料(前駆体)とすることで、ポリイミドフィルムの熱膨張係数を、フィルムの機械搬送方向(MD)、幅方向(TD)共に前記範囲に容易に調整することができるため、好ましい。
The blending ratio of paraphenylenediamine in the aromatic diamine component described above is based on the total amount of the aromatic diamine component from the viewpoint of obtaining a coefficient of thermal expansion within the above range, giving appropriate strength to the film, and preventing poor running properties. And may be selected from the range of 15 mol% or more (for example, 18 mol% or more), usually 20 mol% or more (for example, 25 mol% or more), preferably 30 mol% or more (for example, 31 mol% or more) , 32 mol% or more), preferably 33 mol% or more, and more preferably 35 mol% or more.
The upper limit of the proportion of paraphenylenediamine in the aromatic diamine component may be, for example, 100 mol%, and particularly less than 100 mol% [eg, 99 mol%, 95 mol%, 90 mol%, 80 mol%, 70 mol%, 60 mol% or less (for example, 60 mol%, 55 mol%, 52 mol%, 50 mol%, 48 mol%, 45 mol%, etc.).
Typically, the proportion of the paraphenylenediamine component in the aromatic diamine component is 15 to 80 mol% (for example, 18 to 75 mol%), 20 to 75 mol% (for example, 25-70 mol%), 30-65 mol% (for example, 32-60 mol%, 30-55 mol% (for example, 32-50 mol%)), etc. may be sufficient.
In addition, when the aromatic diamine component contains 4,4′-diaminodiphenyl ether and / or 3,4′-diaminodiphenyl ether (particularly 4,4′-diaminodiphenyl ether), 4,4′-diamino in the aromatic diamine component The proportion of diphenyl ether and / or 3,4'-diaminodiphenyl ether may be selected from the range of, for example, 85 mol% or less (for example, 82 mol% or less), preferably 80, based on the total amount of the aromatic diamine component. Mol% or less (for example, 78 mol% or less), more preferably 75 mol% or less (for example, 73 mol% or less), 70 mol% or less (for example, 68 mol% or less, 65 mol% or less), Also good.
The lower limit value of the ratio of 4,4′-diaminodiphenyl ether and / or 3,4′-diaminodiphenyl ether (particularly 4,4′-diaminodiphenyl ether) in the aromatic diamine component is not particularly limited, and for example, 1 mol%, It may be 5 mol%, 10 mol%, 15 mol%, 20 mol%, 30 mol%, 40 mol%, 45 mol%, 50 mol%, 52 mol%, 55 mol%, 60 mol%, and the like.
Typically, the proportion of 4,4′-diaminodiphenyl ether and / or 3,4′-diaminodiphenyl ether (particularly 4,4′-diaminodiphenyl ether) in the aromatic diamine component is based on the total amount of aromatic diamine component, 20-85 mol% (eg, 22-82 mol%), 25-80 mol% (eg, 30-78 mol%), 35-75 mol% (eg, 38-72 mol%), 40-70 mol% (For example, 45-70 mol%), 50-68 mol%, etc. may be sufficient.
The blending ratio (molar ratio) in the acid anhydride component is not particularly limited as long as the effects of the present invention are not hindered. For example, 3,3 ′, 4,4′-diphenyltetracarboxylic dianhydride is included. In this case, the content of 3,3 ′, 4,4′-diphenyltetracarboxylic dianhydride is preferably 15 mol% or more (for example, 18 mol% or more), preferably 20 mol based on the total amount of the acid anhydride component. % Or more is more preferable, and 25 mol% or more is more preferable.
The upper limit value of the ratio of 3,3 ′, 4,4′-diphenyltetracarboxylic dianhydride in the acid anhydride component may be 100 mol%, particularly less than 100 mol% (for example, 99 mol%, 95 mol%, 90 mol%, 85 mol%, 80 mol%, 70 mol%, 60 mol%, 50 mol%, 45 mol%, 42 mol%, 40 mol%, 38 mol%, 35 mol%, 33 mol %).
Typically, the ratio of 3,3 ′, 4,4′-diphenyltetracarboxylic dianhydride in the acid anhydride component is 15 to 85 mol% (for example, 18 to 70 mol%), 18-60 mol% (for example, 18-50 mol%), 20-40 mol% may be sufficient.
When the acid anhydride component contains pyromellitic dianhydride, the proportion of pyromellitic dianhydride is, for example, 15 mol% or more (for example, 20 mol% or more), preferably, based on the entire acid anhydride component. May be about 25 mol% or more (for example, 30 mol% or more), more preferably about 35 mol% or more (for example, 40 mol% or more), % Or more, 55 mol% or more, 58 mol% or more, 60 mol% or more, 62 mol% or more, etc.).
The upper limit value of the proportion of pyromellitic dianhydride in the acid anhydride component is not particularly limited, and may be, for example, 100 mol%, particularly less than 100 mol% (for example, 95 mol%, 90 mol%, 85 mol%, 80 mol%, 82 mol%, 75 mol%, 72 mol%, etc.).
Typically, the proportion of pyromellitic dianhydride in the acid anhydride component is 10 to 95 mol% (for example, 12 to 90 mol%), 15 to 85 mol% ( For example, 20-82 mol%), 30-85 mol% (for example, 40-82 mol%), 50-80 mol% (for example, 60-80 mol%), etc. may be sufficient.
By using a polyamic acid composed of such an aromatic diamine component and an acid anhydride component as a raw material (precursor) of the polyimide film, the thermal expansion coefficient of the polyimide film is determined by the machine transport direction (MD) of the film, This is preferable because the width direction (TD) can be easily adjusted to the above range.
また、本発明において、ポリアミック酸溶液の形成に使用される有機溶媒の具体例としては、例えば、ジメチルスルホキシド、ジエチルスルホキシド等のスルホキシド系溶媒、N,N−ジメチルホルムアミド、N,N−ジエチルホルムアミド等のホルムアミド系溶媒、N,N−ジメチルアセトアミド、N,N−ジエチルアセトアミド等のアセトアミド系溶媒、N−メチル−2−ピロリドン、N−ビニル−2−ピロリドン等のピロリドン系溶媒、フェノール、o−,m−,又はp−クレゾール、キシレノール、ハロゲン化フェノール、カテコール等のフェノール系溶媒又はヘキサメチルホスホルアミド、γ−ブチロラクトン等の非プロトン性極性溶媒を挙げることができ、これらを単独又は2種以上を使用した混合物として用いるのが望ましいが、さらにはキシレン、トルエン等の芳香族炭化水素の使用も可能である。 In the present invention, specific examples of the organic solvent used for forming the polyamic acid solution include sulfoxide solvents such as dimethyl sulfoxide and diethyl sulfoxide, N, N-dimethylformamide, N, N-diethylformamide and the like. Formamide solvents, N, N-dimethylacetamide, acetamide solvents such as N, N-diethylacetamide, pyrrolidone solvents such as N-methyl-2-pyrrolidone and N-vinyl-2-pyrrolidone, phenol, o-, Examples thereof include phenolic solvents such as m- or p-cresol, xylenol, halogenated phenol and catechol, and aprotic polar solvents such as hexamethylphosphoramide and γ-butyrolactone. These may be used alone or in combination of two or more. It is desirable to use as a mixture using And further can be xylene, the use of aromatic hydrocarbons such as toluene.
重合方法は、公知のいずれの方法で行ってもよく、例えば
(1)先に芳香族ジアミン成分全量を溶媒中に入れ、その後、酸無水物成分を芳香族ジアミン成分全量と当量(等モル)になるように加えて重合する方法。
(2)先に酸無水物成分全量を溶媒中に入れ、その後、芳香族ジアミン成分を酸無水物成分と当量になるように加えて重合する方法。
(3)一方の芳香族ジアミン成分(a1)を溶媒中に入れた後、反応成分に対して一方の酸無水物成分(b1)が95〜105モル%となる比率で反応に必要な時間混合した後、もう一方の芳香族ジアミン成分(a2)を添加し、続いて、もう一方の酸無水物成分(b2)を全芳香族ジアミン成分と全酸無水物成分とがほぼ当量になるように添加して重合する方法。
(4)一方の酸無水物成分(b1)を溶媒中に入れた後、反応成分に対して一方の芳香族ジアミン成分(a1)が95〜105モル%となる比率で反応に必要な時間混合した後、もう一方の酸無水物成分(b2)を添加し、続いてもう一方の芳香族ジアミン成分(a2)を全芳香族ジアミン成分と全酸無水物成分とがほぼ当量になるように添加して重合する方法。
(5)溶媒中で一方の芳香族ジアミン成分と酸無水物成分をどちらかが過剰になるよう反応させてポリアミック酸溶液(A)を調整し、別の溶媒中でもう一方の芳香族ジアミン成分と酸無水物成分をどちらかが過剰になるよう反応させてポリアミック酸溶液(B)を調整する。こうして得られた各ポリアミック酸溶液(A)と(B)を混合し、重合を完結する方法。この時ポリアミック酸溶液(A)を調整するに際し芳香族ジアミン成分が過剰の場合、ポリアミック酸溶液(B)では酸無水物成分を過剰に、またポリアミック酸溶液(A)で酸無水物成分が過剰の場合、ポリアミック酸溶液(B)では芳香族ジアミン成分を過剰にし、ポリアミック酸溶液(A)と(B)を混ぜ合わせこれら反応に使用される全芳香族ジアミン成分と全酸無水物成分とがほぼ当量になるように調整する。なお、重合方法はこれらに限定されることはなく、その他公知の方法を用いてもよい。
The polymerization method may be carried out by any known method. For example, (1) First, the total amount of the aromatic diamine component is put in a solvent, and then the acid anhydride component is equivalent to the total amount of the aromatic diamine component (equal mole) In addition to the polymerization method.
(2) A method in which the entire amount of the acid anhydride component is first put in a solvent, and then the aromatic diamine component is added so as to be equivalent to the acid anhydride component for polymerization.
(3) After putting one aromatic diamine component (a1) in a solvent, mixing for the time required for the reaction at a ratio of 95 to 105 mol% of one acid anhydride component (b1) with respect to the reaction component After that, the other aromatic diamine component (a2) is added, and then the other acid anhydride component (b2) is added so that the total aromatic diamine component and the total acid anhydride component are approximately equivalent. A method of adding and polymerizing.
(4) After putting one acid anhydride component (b1) in a solvent, mixing for a time required for the reaction at a ratio of 95 to 105 mol% of one aromatic diamine component (a1) with respect to the reaction component After that, the other acid anhydride component (b2) is added, and then the other aromatic diamine component (a2) is added so that the total aromatic diamine component and the total acid anhydride component are approximately equivalent. And then polymerize.
(5) A polyamic acid solution (A) is prepared by reacting one aromatic diamine component and an acid anhydride component in a solvent so that either one becomes excessive, and the other aromatic diamine component in another solvent. The polyamic acid solution (B) is prepared by reacting either of the acid anhydride component and the acid anhydride component in excess. A method in which the polyamic acid solutions (A) and (B) thus obtained are mixed to complete the polymerization. At this time, when adjusting the polyamic acid solution (A), if the aromatic diamine component is excessive, the polyamic acid solution (B) has excessive acid anhydride component, and the polyamic acid solution (A) has excessive acid anhydride component. In the case of the polyamic acid solution (B), the aromatic diamine component is excessive, the polyamic acid solutions (A) and (B) are mixed, and the total aromatic diamine component and total acid anhydride component used in these reactions are mixed. Adjust so that it is approximately equivalent. The polymerization method is not limited to these, and other known methods may be used.
こうして得られるポリアミック酸溶液は、通常5〜40重量%の固形分を含有し、好ましくは10〜30重量%の固形分を含有する。また、その粘度は、ブルックフィールド粘度計による測定値で通常10〜2000Pa・sであり、安定した送液のために、好ましくは100〜1000Pa・sである。また、有機溶媒溶液中のポリアミック酸は部分的にイミド化されていてもよい。 The polyamic acid solution thus obtained usually contains 5 to 40% by weight of solid content, and preferably contains 10 to 30% by weight of solid content. The viscosity is usually 10 to 2000 Pa · s as measured with a Brookfield viscometer, and preferably 100 to 1000 Pa · s for stable liquid feeding. Moreover, the polyamic acid in the organic solvent solution may be partially imidized.
次に、ポリイミドフィルムの製造方法について説明する。ポリイミドフィルムを製膜する方法としては、ポリアミック酸溶液をフィルム状にキャストし熱的に脱環化脱溶媒させてポリイミドフィルムを得る方法、及びポリアミック酸溶液に環化触媒及び脱水剤を混合し化学的に脱環化させてゲルフィルムを作製し、これを加熱脱溶媒することによりポリイミドフィルムを得る方法が挙げられるが、後者の方が得られるポリイミドフィルムの熱膨張係数を低く抑えることができるので好ましい。 Next, the manufacturing method of a polyimide film is demonstrated. As a method for forming a polyimide film, a polyamic acid solution is cast into a film and thermally decyclized and desolvated to obtain a polyimide film, and a polyamic acid solution is mixed with a cyclization catalyst and a dehydrating agent. The method of obtaining a polyimide film by preparing a gel film by decyclizing it and heating it to remove the solvent is mentioned, but the latter can keep the coefficient of thermal expansion of the resulting polyimide film low. preferable.
化学的に脱環化させる方法においては、まず前記ポリアミック酸溶液を調製する。なお、本発明においては、通常、このポリアミック酸溶液に、前記のような無機粒子を含有させてもよい。 In the method of chemically decyclizing, first, the polyamic acid solution is prepared. In the present invention, usually, the polyamic acid solution may contain inorganic particles as described above.
ここで使用するポリアミック酸溶液は、予め重合したポリアミック酸溶液であっても、また無機粒子を含有させる際に順次重合したものであってもよい。 The polyamic acid solution used here may be a polyamic acid solution polymerized in advance, or may be polymerized sequentially when inorganic particles are contained.
前記ポリアミック酸溶液は、環化触媒(イミド化触媒)、脱水剤、ゲル化遅延剤等を含有することができる。 The polyamic acid solution may contain a cyclization catalyst (imidization catalyst), a dehydrating agent, a gelation retarder, and the like.
環化触媒としては、アミン類、例えば、脂肪族第3級アミン(トリメチルアミン、トリエチレンジアミンなど)、芳香族第3級アミン(ジメチルアニリンなど)、複素環第3級アミン(例えば、イソキノリン、ピリジン、β−ピコリンなど)などが挙げられる。これらは、1種単独で使用してもよく、2種以上を混合して用いてもよい。 Cyclization catalysts include amines such as aliphatic tertiary amines (trimethylamine, triethylenediamine, etc.), aromatic tertiary amines (dimethylaniline, etc.), heterocyclic tertiary amines (eg, isoquinoline, pyridine, β-picoline and the like). These may be used individually by 1 type, and 2 or more types may be mixed and used for them.
脱水剤としては、酸無水物、例えば、脂肪族カルボン酸無水物(例えば、無水酢酸、無水プロピオン酸、無水酪酸など)、芳香族カルボン酸無水物(例えば、無水安息香酸など)などが挙げられる。これらは、1種単独で使用してもよく、2種以上を混合して用いてもよい。
ゲル化遅延剤としては、特に限定されず、アセチルアセトン等を使用することができる。
Examples of the dehydrating agent include acid anhydrides such as aliphatic carboxylic acid anhydrides (eg, acetic anhydride, propionic anhydride, butyric anhydride), aromatic carboxylic acid anhydrides (eg, benzoic anhydride, etc.), and the like. . These may be used individually by 1 type, and 2 or more types may be mixed and used for them.
It does not specifically limit as a gel retarder, Acetyl acetone etc. can be used.
ポリアミック酸溶液からポリイミドフィルムを製造する方法としては、ポリアミック酸溶液(特に、環化触媒及び脱水剤を含有させたポリアミック酸溶液)を、支持体上に流延してフィルム状に成型し、支持体上でイミド化を一部進行させて自己支持性を有するゲルフィルムとした後、支持体より剥離し、加熱乾燥/イミド化し、熱処理を行う方法が挙げられる。 As a method for producing a polyimide film from a polyamic acid solution, a polyamic acid solution (particularly, a polyamic acid solution containing a cyclization catalyst and a dehydrating agent) is cast on a support and molded into a film shape. Examples include a method in which imidization is partially advanced on the body to form a gel film having self-supporting property, and then peeled from the support, heat-dried / imidized, and subjected to heat treatment.
前記支持体とは、金属製の回転ドラムやエンドレスベルトが一例として上げられるが、均一な材質で表面粗度が制御、管理できるものであれば特に限定されない。 Examples of the support include a metal rotating drum and an endless belt, but are not particularly limited as long as the surface roughness can be controlled and managed with a uniform material.
前記ゲルフィルムは、支持体からの受熱及び/又は熱風や電気ヒーター等の熱源からの受熱により通常20〜200℃、好ましくは40〜150℃に加熱されて閉環反応し、遊離した有機溶媒等の揮発分を乾燥させることにより自己支持性を有するようになり、支持体から剥離される。 The gel film is usually heated to 20 to 200 ° C., preferably 40 to 150 ° C. by receiving heat from the support and / or receiving heat from a heat source such as hot air or an electric heater, and causes a ring-closing reaction to form a free organic solvent or the like. By drying the volatile matter, it becomes self-supporting and is peeled off from the support.
前記支持体から剥離されたゲルフィルムは延伸処理してもよい。延伸処理としては、搬送方向(MD)への延伸と幅方向(TD)への延伸を所定の倍率に組み合わせることが可能などであれば、その装置、方法は限定されない。本発明の効果を有するフィルムを作成するための延伸倍率は、通常200℃以上の温度で、MDは通常1.05〜1.9倍であり、好ましくは1.1〜1.6倍であり、さらに好ましくは1.1〜1.5倍であってもよい。TDは、通常MDの倍率のXの1.1〜1.5倍であり、好ましくは1.2〜1.45倍であってもよい。 The gel film peeled from the support may be stretched. The stretching process is not limited as long as the stretching in the transport direction (MD) and the stretching in the width direction (TD) can be combined at a predetermined magnification. The draw ratio for producing a film having the effect of the present invention is usually 200 ° C. or higher, and MD is usually 1.05 to 1.9 times, preferably 1.1 to 1.6 times. More preferably, it may be 1.1 to 1.5 times. TD is usually 1.1 to 1.5 times X of the magnification of MD, and preferably 1.2 to 1.45 times.
上記フィルムは、熱風及び/又は電気ヒーター等により、250〜500℃の温度で15秒から30分熱処理を行ってもよい。 The film may be heat-treated with hot air and / or an electric heater at a temperature of 250 to 500 ° C. for 15 seconds to 30 minutes.
フィルムの厚みは5〜75μm、好ましくは10〜50μm、さらに好ましくは、20〜40μmとなるように、固形分濃度、粘度、支持体に流延するポリマー量を調整することが好ましい。 The thickness of the film is preferably 5 to 75 μm, preferably 10 to 50 μm, more preferably 20 to 40 μm, and the solid content concentration, the viscosity, and the amount of polymer cast on the support are preferably adjusted.
このようにして得られたポリイミドフィルムに対して、さらにアニール処理を行うことが好ましい。そうすることによってフィルムの熱リラックスが起こり加熱収縮率を小さく抑えることができる。アニール処理の温度としては、特に限定されないが、200℃以上500℃以下が好ましく、200℃以上370℃以下がより好ましく、210℃以上350℃以下が特に好ましい。アニール処理からの熱リラックスにより、200℃での加熱収縮率を上記範囲内に抑えることができるので、より一層寸法精度が高くなり好ましい。 It is preferable to further anneal the polyimide film thus obtained. By doing so, thermal relaxation of the film occurs and the heat shrinkage rate can be kept small. The annealing temperature is not particularly limited, but is preferably 200 ° C. or higher and 500 ° C. or lower, more preferably 200 ° C. or higher and 370 ° C. or lower, and particularly preferably 210 ° C. or higher and 350 ° C. or lower. The thermal shrinkage from the annealing treatment can suppress the heat shrinkage rate at 200 ° C. within the above range, which is preferable because the dimensional accuracy is further improved.
また、得られたポリイミドフィルムに接着性を持たせるため、フィルム表面にコロナ処理やプラズマ処理のような電気処理又はブラスト処理のような物理的処理を行ってもよく、これらの物理的処理は、常法に従って行うことができる。プラズマ処理を行う場合の雰囲気の圧力は、特に限定されないが、通常13.3〜1330kPaの範囲、13.3〜133kPa(100〜1000Torr)の範囲が好ましく、80.0〜120kPa(600〜900Torr)の範囲がより好ましい。 Moreover, in order to give adhesiveness to the obtained polyimide film, the film surface may be subjected to electrical treatment such as corona treatment or plasma treatment or physical treatment such as blast treatment, and these physical treatments are: It can be performed according to conventional methods. The pressure of the atmosphere when performing the plasma treatment is not particularly limited, but is usually in the range of 13.3 to 1330 kPa, preferably 13.3 to 133 kPa (100 to 1000 Torr), and 80.0 to 120 kPa (600 to 900 Torr). The range of is more preferable.
プラズマ処理を行う雰囲気は、不活性ガスを少なくとも20モル%含むものであり、不活性ガスを50モル%以上含有するものが好ましく、80モル%以上含有するものがより好ましく、90モル%以上含有するものが最も好ましい。前記不活性ガスは、He、Ar、Kr、Xe、Ne、Rn、N2及びこれらの2種以上の混合物を含む。特に好ましい不活性ガスはArである。さらに、前記不活性ガスに対して、酸素、空気、一酸化炭素、二酸化炭素、四塩化炭素、クロロホルム、水素、アンモニア、テトラフルオロメタン(カーボンテトラフルオリド)、トリクロロフルオロエタン、トリフルオロメタン等を混合してもよい。本発明のプラズマ処理の雰囲気として用いられる好ましい混合ガスの組み合わせは、アルゴン/酸素、アルゴン/アンモニア、アルゴン/ヘリウム/酸素、アルゴン/二酸化炭素、アルゴン/窒素/二酸化炭素、アルゴン/ヘリウム/窒素、アルゴン/ヘリウム/窒素/二酸化炭素、アルゴン/ヘリウム、ヘリウム/空気、アルゴン/ヘリウム/モノシラン、アルゴン/ヘリウム/ジシラン等が挙げられる。 The atmosphere in which the plasma treatment is performed contains at least 20 mol% of an inert gas, preferably contains 50 mol% or more of inert gas, more preferably contains 80 mol% or more, and contains 90 mol% or more. Most preferred is. The inert gas includes He, Ar, Kr, Xe, Ne, Rn, N 2 and a mixture of two or more thereof. A particularly preferred inert gas is Ar. Furthermore, oxygen, air, carbon monoxide, carbon dioxide, carbon tetrachloride, chloroform, hydrogen, ammonia, tetrafluoromethane (carbon tetrafluoride), trichlorofluoroethane, trifluoromethane, etc. are mixed with the inert gas. May be. Preferred mixed gas combinations used as the plasma treatment atmosphere of the present invention are argon / oxygen, argon / ammonia, argon / helium / oxygen, argon / carbon dioxide, argon / nitrogen / carbon dioxide, argon / helium / nitrogen, argon / Helium / nitrogen / carbon dioxide, argon / helium, helium / air, argon / helium / monosilane, argon / helium / disilane and the like.
プラズマ処理を施す際の処理電力密度は、特に限定されないが、200W・分/m2以上が好ましく、500W・分/m2以上がより好ましく、1000W・分/m2以上が最も好ましい。プラズマ処理を行うプラズマ照射時間は1秒〜10分が好ましい。プラズマ照射時間をこの範囲内に設定することによって、フィルムの劣化を伴うことなしに、プラズマ処理の効果を十分に発揮することができる。プラズマ処理のガス種類、ガス圧、処理密度は上記の条件に限定されず大気中で行われることもある。 Processing power density when a plasma treatment is not particularly limited, 200 W · min / m 2 or more preferably, 500 W · min / m 2 or more is more preferable, 1000W · min / m 2 or more is most preferred. The plasma irradiation time for performing the plasma treatment is preferably 1 second to 10 minutes. By setting the plasma irradiation time within this range, the effect of the plasma treatment can be sufficiently exhibited without accompanying film deterioration. The gas type, gas pressure, and treatment density of the plasma treatment are not limited to the above conditions, and may be performed in the atmosphere.
なお、本発明のポリイミドフィルムは、上記のように、特定の特性・物性(特定の突起の割合など)を備えているが、このような態様は、上記条件等を適宜選択することで調整できる。例えば、フィルム両面における特定の突起割合は、ポリアミック酸溶液に添加する無機粒子の平均粒径や添加量の選択により調整しうる。また、このような突起割合は、ポリアミック酸溶液の粘度、ポリアミック酸溶液を流延する支持体の表面粗度、支持体から剥離した後のフィルム延伸倍率等にも影響されうるため、さらにこれらを選択することで突起割合を調整してもよい。すなわち、本発明では、無機粒子の平均粒径、添加量、ポリアミック酸溶液の粘度、支持体の表面粗度、フィルムの延伸倍率などを所定の範囲に調整することにより、フィルム両面における突起割合を調整することを可能としたものである。 In addition, although the polyimide film of this invention is equipped with the specific characteristic and physical property (ratio of a specific protrusion, etc.) as mentioned above, such an aspect can be adjusted by selecting the said conditions etc. suitably. . For example, the specific protrusion ratio on both surfaces of the film can be adjusted by selecting the average particle diameter and the addition amount of inorganic particles added to the polyamic acid solution. In addition, the ratio of such protrusions can be affected by the viscosity of the polyamic acid solution, the surface roughness of the support on which the polyamic acid solution is cast, the film stretch ratio after peeling from the support, and so on. You may adjust a protrusion ratio by selecting. That is, in the present invention, by adjusting the average particle size of inorganic particles, the amount added, the viscosity of the polyamic acid solution, the surface roughness of the support, the stretch ratio of the film, and the like to a predetermined range, It is possible to adjust.
このようにして得られるポリイミドフィルムは、寸法安定性、表面平滑性、折り曲げ特性などに優れるため、後述するように、フィルム幅方向に狭ピッチに配線されるCOF(Chip On Film)、特に高密度実装を目的に両面に配線を施した両面COF等のファインピッチ回路基板や半導体パッケージに好適に用いることができる。 Since the polyimide film thus obtained is excellent in dimensional stability, surface smoothness, folding characteristics, etc., as will be described later, COF (Chip On Film), particularly high density, wired in a narrow pitch in the film width direction. It can be suitably used for a fine pitch circuit board such as a double-sided COF in which wiring is provided on both sides for mounting and a semiconductor package.
[銅張積層体]
本発明には、上述した本発明のポリイミドフィルムを用いた(備えた)銅張り積層体も含む。このような銅張り積層体は、ポリイミドフィルムの少なくとも一方の面に銅層が形成されており、特に、ポリイミドフィルムの両面に銅層が形成されている。
このような銅張り積層体の製造方法は特に限定されず、従来公知の製造方法に従ってよい。例えば、ポリイミドフィルムの少なくとも一方の面(特に両面)に、スパッタ法により形成したニッケルクロムを主成分とする金属層の上に、電気めっき法により銅を主成分とする層を積層する方法が一般的である。本発明の銅張り積層体は、例えば、ポリイミドフィルムの両面に、ニッケルクロム合金層を設け、この上に所定厚み(例えば、厚み1〜3μm)の銅を電気めっき法により形成させることで得られる。
[Copper-clad laminate]
The present invention also includes a copper-clad laminate using (provided) the polyimide film of the present invention described above. In such a copper-clad laminate, a copper layer is formed on at least one surface of the polyimide film, and in particular, a copper layer is formed on both surfaces of the polyimide film.
The manufacturing method of such a copper clad laminated body is not specifically limited, You may follow a conventionally well-known manufacturing method. For example, a method of laminating a layer mainly composed of copper by electroplating on a metal layer mainly composed of nickel chromium formed by sputtering on at least one surface (particularly both surfaces) of a polyimide film is generally used. Is. The copper-clad laminate of the present invention can be obtained, for example, by providing nickel chrome alloy layers on both sides of a polyimide film and forming copper of a predetermined thickness (for example, thickness of 1 to 3 μm) thereon by an electroplating method. .
また、本発明は、上述した本発明の銅張り積層板を用いた(備えた)両面COF用基板を含む。両面COF用基板は、銅張り積層板に配線回路を設けたものであってもよい。
このような両面COF用基板の製造方法は特に限定されず、公知の方法を用いることができるが、特に、セミアディティブ法により製造してもよい。
より具体的な方法としては、フォトリソ法を用いて配線回路をパターニングし、配線を形成したい箇所のレジスト層を剥離した後、露出した薄銅層上に電解銅めっきにより配線を形成、その後レジスト層、薄銅層、下地金属層を除去し、配線に無電解スズめっき法によりスズを0.1〜0.5μm形成し、その後必要な部分にソルダーレジストを積層する方法などが挙げられる。
The present invention also includes a double-sided COF substrate using (provided) the above-described copper-clad laminate of the present invention. The double-sided COF substrate may be a copper-clad laminate provided with a wiring circuit.
The manufacturing method of such a double-sided COF substrate is not particularly limited, and a known method can be used, but in particular, it may be manufactured by a semi-additive method.
As a more specific method, a wiring circuit is patterned using a photolithographic method, a resist layer is peeled off where a wiring is to be formed, and then a wiring is formed on the exposed thin copper layer by electrolytic copper plating, and then a resist layer And a method of removing the thin copper layer and the base metal layer, forming 0.1 to 0.5 μm of tin on the wiring by an electroless tin plating method, and then laminating a solder resist on a necessary portion.
本発明は、本発明の効果を奏する限り、本発明の技術的範囲内において、上記の構成を種々組み合わせた態様を含む。 The present invention includes embodiments in which the above-described configurations are variously combined within the technical scope of the present invention as long as the effects of the present invention are exhibited.
次に、実施例を挙げて本発明をさらに具体的に説明するが、本発明はこれらの実施例により何ら限定されるものではない。 EXAMPLES Next, although an Example is given and this invention is demonstrated further more concretely, this invention is not limited at all by these Examples.
なお、実施例中、PPDはパラフェニレンジアミンを表し、4,4’−ODAは4,4’−ジアミノジフェニルエーテルを表し、PMDAはピロメリット酸二無水物を表し、BPDAは3,3’,4,4’−ジフェニルテトラカルボン酸二無水物を表し、DMAcはN,N−ジメチルアセトアミドをそれぞれ表す。 In the examples, PPD represents paraphenylenediamine, 4,4′-ODA represents 4,4′-diaminodiphenyl ether, PMDA represents pyromellitic dianhydride, and BPDA represents 3,3 ′, 4. , 4′-diphenyltetracarboxylic dianhydride, DMAc represents N, N-dimethylacetamide, respectively.
[実施例1]
(ポリイミドフィルムの作成)
PPD(分子量108.14)、4,4’−ODA(分子量200.24)、BPDA(分子量294.22)、PMDA(分子量218.12)をモル比35/65/30/70の割合で用意し、DMAc中20重量%溶液にして重合し、3500poiseのポリアミド酸溶液を得た。これに、平均粒子径0.1μmのシリカのDMAcスラリーを樹脂重量当たり0.5重量%添加し、十分に攪拌し分散させた。次にガラス板上に厚み125μmのポリエステルフィルム(ルミラーX43:東レ製、Ra0.2μm)を置き支持体とし、この支持体上にポリアミド酸溶液を乗せ、アプリケーターで流延した。続いてこれを無水酢酸、β−ピコリンの混合溶液に10分間浸してイミド化反応させた後、ポリイミドゲルフィルムをポリエステルフィルムから剥がし、そのゲルフィルムを手動延伸器にてアプリケーター方向(以後MDとする)に1.15倍、その垂直方向(以後TDとする)に1.40倍延伸したのち、支持枠に固定した。その後300℃で20分間、続いて400℃で5分間加熱乾燥した後、上記支持枠より取り外し、厚さ35μmのポリイミドフィルムを得た。
[Example 1]
(Making polyimide film)
PPD (molecular weight 108.14), 4,4′-ODA (molecular weight 200.24), BPDA (molecular weight 294.22), PMDA (molecular weight 218.12) are prepared in a molar ratio of 35/65/30/70 And polymerized to a 20 wt% solution in DMAc to obtain a 3500 poise polyamic acid solution. A silica DMAc slurry having an average particle diameter of 0.1 μm was added to this by 0.5% by weight per resin weight, and the mixture was sufficiently stirred and dispersed. Next, a 125 μm thick polyester film (Lumirror X43: manufactured by Toray, Ra 0.2 μm) was placed on the glass plate as a support, and the polyamic acid solution was placed on the support and cast with an applicator. Subsequently, this was immersed in a mixed solution of acetic anhydride and β-picoline for 10 minutes to cause an imidization reaction, and then the polyimide gel film was peeled off from the polyester film, and the gel film was applied in the applicator direction (hereinafter referred to as MD) with a manual stretcher. ) And 1.40 times in the vertical direction (hereinafter referred to as TD), and then fixed to the support frame. Then, after drying at 300 ° C. for 20 minutes and then at 400 ° C. for 5 minutes, it was removed from the support frame to obtain a polyimide film having a thickness of 35 μm.
このフィルムについて、次の各特性の評価を行い、表1にその結果を示した。
(1)表面粗度
表面粗さ測定機SE−3500(小坂研究所製)を用い、JIS B0601―1982に準じて測定した。
(2)表面突起個数
レーザー顕微鏡VK−9710(キーエンス製)を用いて、100cm2の視野でフィルム表面の突起を観察、高さ測定を行い、0.8μm以上の突起の個数を数えた。
なお、観察は、測定部位を対物レンズにて10倍に拡大して(モニター上の倍率200倍で)行った。また、観察された突起の幅は、いずれも15μm以上のものであり(幅15μm未満の突起はなく)、突起が複数の凸部を有する場合には最も高い凸部の高さを突起の高さとした。
(3)熱膨張係数
TMA−60(島津製作所製)を使用し、測定温度範囲:50〜200℃、昇温速度:10℃/分の条件で測定した。
(4)引張弾性率
RTM−250(エー・アンド・デイ製)を使用し、引張速度:100mm/分の条件で測定した。
(5)ループスティフネス
ループステフネステスタDA(東洋精機製作所製)を使用し、サンプル幅20mm、ループ長50mm、圧縮距離20mmの条件で測定した。
(6)フィルム取扱性
スリップテスター(テクノ・ニーズ社製)に、サンプルの支持体面と非支持体面を重ね合わせ固定し、荷重200g、測定速度120mm/minの速度で、静止摩擦係数と動摩擦係数を測定した。結果を表1に示す。
The film was evaluated for the following properties, and Table 1 shows the results.
(1) Surface roughness It measured according to JIS B0601-1982 using surface roughness measuring machine SE-3500 (made by Kosaka Laboratory).
(2) Number of surface protrusions Using a laser microscope VK-9710 (manufactured by Keyence), the protrusions on the surface of the film were observed in a field of 100 cm 2 and the height was measured, and the number of protrusions of 0.8 μm or more was counted.
The observation was performed by magnifying the measurement site 10 times with an objective lens (at a magnification of 200 times on the monitor). In addition, the width of the observed protrusion is 15 μm or more (no protrusion having a width of less than 15 μm), and when the protrusion has a plurality of protrusions, the height of the highest protrusion is set to the height of the protrusion. Say it.
(3) Coefficient of thermal expansion TMA-60 (manufactured by Shimadzu Corporation) was used, and measurement was performed under the conditions of measurement temperature range: 50 to 200 ° C, temperature increase rate: 10 ° C / min.
(4) Tensile modulus RTM-250 (manufactured by A & D) was used, and the tensile modulus was measured under the condition of 100 mm / min.
(5) Loop stiffness A loop stiffness tester DA (manufactured by Toyo Seiki Seisakusho) was used, and measurement was performed under the conditions of a sample width of 20 mm, a loop length of 50 mm, and a compression distance of 20 mm.
(6) Film handling property The sample support surface and non-support surface are overlapped and fixed on a slip tester (manufactured by Techno Needs), and the static friction coefficient and dynamic friction coefficient are measured at a load of 200 g and a measurement speed of 120 mm / min. It was measured. The results are shown in Table 1.
(両面銅張り積層板の作成)
上記で得られたポリイミドフィルムの支持体面にスパッタ法により、ニッケルクロム層(Ni:Cr=80:20m、厚さ25nm)、および銅層(厚さ100nm)を形成した後、同様に非支持体面にもニッケルクロム層、銅層を形成した。続いて硫酸銅めっき液を用いた電解めっきにて厚さ2μmの銅層を両面に形成した。
(Creation of double-sided copper-clad laminate)
After forming a nickel chrome layer (Ni: Cr = 80: 20 m, thickness 25 nm) and a copper layer (thickness 100 nm) on the support surface of the polyimide film obtained above by sputtering, similarly, the non-support surface Also, a nickel chromium layer and a copper layer were formed. Subsequently, a copper layer having a thickness of 2 μm was formed on both surfaces by electrolytic plating using a copper sulfate plating solution.
得られた両面銅張り積層板(図1)について以下の項目を評価した。結果を表1に記載する。 The following items were evaluated for the obtained double-sided copper-clad laminate (FIG. 1). The results are listed in Table 1.
(7)ピンホール個数
両面銅張り積層板の支持体面をカバーフィルムで保護した後、塩化第二鉄溶液を用いてエッチング処理を行い、非支持体面の銅層、ニッケルクロム層を除去した。続いて、暗室にて、蛍光灯バックライトをポリイミド面(非支持体面)から照らし、銅面(支持体面)側に漏れてくる光(ピンホール)の個数を100cm2の視野で目視にて数えた。同様の手法で、非支持体面のピンホールの個数も評価した。
(7) Number of pinholes After the support surface of the double-sided copper-clad laminate was protected with a cover film, an etching treatment was performed using a ferric chloride solution to remove the copper layer and the nickel chromium layer on the non-support surface. Subsequently, in a dark room, the fluorescent lamp backlight is illuminated from the polyimide surface (non-support surface), and the number of light (pinholes) leaking to the copper surface (support surface) is visually counted in a 100 cm 2 field of view. It was. In the same manner, the number of pinholes on the non-support surface was also evaluated.
(評価用COF用基板の作成)
上記で得られた両面銅張り積層板の非支持体面の銅層、ニッケルクロム層を除去したサンプルについて、銅表面(支持体面)を上村工業(株)製スルカップACL−067を水で15%に希釈した液に、30℃30秒間含浸させて脱脂した後、乾燥厚が15μmとなるようにフォトレジストをラミネートして、図2に示す評価用パターン(ライン幅20μm、スペース幅20μm)を露光・現像した。その後、常法に従って、セミアディティブ法により、厚さ8μmの銅めっき層を形成し、評価用COF用基板を作成した。
得られたCOF用基板について、以下の項目を評価し、結果を表1に示した。
(Creation of evaluation COF substrate)
About the sample which removed the copper layer of the non-supporting body surface of the double-sided copper clad laminated board obtained above, and the nickel chromium layer, the copper surface (supporting body surface) is made into 15% of water by using Sulcup ACL-067 made by Uemura Kogyo Co., Ltd. After impregnating the diluted solution for 30 seconds at 30 ° C. and degreasing, a photoresist is laminated so that the dry thickness is 15 μm, and the pattern for evaluation (line width 20 μm, space width 20 μm) shown in FIG. Developed. Then, according to a conventional method, a copper plating layer having a thickness of 8 μm was formed by a semi-additive method, and an evaluation COF substrate was prepared.
The obtained COF substrate was evaluated for the following items, and the results are shown in Table 1.
(8)折り曲げ性
COF用基板の導体側を内側に図3の様に折り曲げ、1.0kgfの荷重を10秒間加えた後、COF基板を開き元の状態にした。これを1サイクルとし、5回から30回繰り返し、その間、導体の折り曲げ箇所を顕微鏡で観察し、導体が破断するまでの回数を測定した。
(8) Bending property The conductor side of the COF substrate was bent inward as shown in FIG. 3 and a load of 1.0 kgf was applied for 10 seconds, and then the COF substrate was opened and returned to its original state. This was defined as one cycle, and was repeated 5 to 30 times. During that time, the bent part of the conductor was observed with a microscope, and the number of times until the conductor broke was measured.
(9)寸法安定性
上記で得られた評価用COF基板を被着体(ガラス)に異方導電フィルム(ACF:製品名、日立化成製アニソルムC5311)を用いて、180℃×10秒、5MPaの条件で圧着した(図4)。
(9) Dimensional stability Using the anisotropic COF film (ACF: product name, Anisolum C5311 manufactured by Hitachi Chemical Co., Ltd.) on the adherend (glass), the evaluation COF substrate obtained above is 180 ° C. × 10 seconds, 5 MPa. Crimping was performed under the conditions (FIG. 4).
評価用回路パターン30サンプルの外形寸法を圧着前(L3)と圧着後(L4)で測定し、以下の式で算出した伸び率の標準偏差を測定した。
伸び率(%)={(L4−L3)/L3}×100
The external dimensions of 30 sample circuit patterns for evaluation were measured before (L3) and after (L4) pressure bonding, and the standard deviation of the elongation calculated by the following equation was measured.
Elongation rate (%) = {(L4-L3) / L3} × 100
[実施例2]
ゲルフィルムをMDに1.25倍、TDに1.40倍に延伸した他は、実施例1と同様の手順で厚さ38μmのポリイミドフィルムを得た。
[Example 2]
A polyimide film having a thickness of 38 μm was obtained in the same procedure as in Example 1 except that the gel film was stretched 1.25 times in MD and 1.40 times in TD.
[実施例3]
平均粒子径0.4μmのシリカのDMAcスラリーを用いること以外は、実施例1と同様の手順で厚さ35μmのポリイミドフィルムを得た。
[Example 3]
A polyimide film having a thickness of 35 μm was obtained in the same procedure as in Example 1, except that a silica DMAc slurry having an average particle diameter of 0.4 μm was used.
[実施例4]
ゲルフィルムをMDに1.15倍、TDに1.35倍に延伸した他は、実施例3と同様の手順で厚さ25μmのポリイミドフィルムを得た。
[Example 4]
A polyimide film having a thickness of 25 μm was obtained in the same procedure as in Example 3 except that the gel film was stretched 1.15 times in MD and 1.35 times in TD.
[実施例5]
PPD、4,4’−ODA、BPDA、PMDAをモル比20/80/35/65の割合とし、平均粒子径0.4μmのシリカを用いること以外は、実施例2と同様の手順で、厚さ38μmのポリイミドフィルムを得た。
[Example 5]
The thickness of PPD, 4,4′-ODA, BPDA, and PMDA is set to a ratio of 20/80/35/65 and silica having an average particle diameter of 0.4 μm is used. A polyimide film having a thickness of 38 μm was obtained.
[実施例6]
PPD、4,4’−ODA、BPDA、PMDAをモル比30/70/25/75の割合とすること以外は、実施例3と同様の手順で、厚さ38μmのポリイミドフィルムを得た。
[Example 6]
A polyimide film having a thickness of 38 μm was obtained in the same procedure as in Example 3 except that PPD, 4,4′-ODA, BPDA, and PMDA were used in a molar ratio of 30/70/25/75.
[実施例7]
平均粒子径1.0μmのリン酸水素カルシウムを用いること以外は、実施例5と同様の手順で、厚さ25μmのポリイミドフィルムを得た。
[Example 7]
A polyimide film having a thickness of 25 μm was obtained in the same procedure as in Example 5 except that calcium hydrogen phosphate having an average particle diameter of 1.0 μm was used.
[実施例8]
PPD、BPDAをモル比1:1の割合とし、これに平均粒子径0.1μmのシリカのDMAcスラリーを樹脂重量当たり0.5重量%添加しポリアミド酸溶液を作成した。そして、支持体として厚み125μmのポリエステルフィルム(ルミラーS10:東レ製、Ra0.05μm)を使用する以外は、実施例4と同様の手順で、厚さ38μmのポリイミドフィルムを得た。
[Example 8]
A polyamic acid solution was prepared by adding PDM and BPDA at a molar ratio of 1: 1 and adding 0.5% by weight of silica DMAc slurry having an average particle diameter of 0.1 μm to the resin weight. Then, a polyimide film having a thickness of 38 μm was obtained in the same procedure as in Example 4 except that a polyester film having a thickness of 125 μm (Lumirror S10: manufactured by Toray, Ra 0.05 μm) was used as the support.
[実施例9]
PPD、4,4’−ODA、BPDA、PMDAをモル比40/60/25/75の割合とすること以外は、実施例3と同様の手順で、厚さ35μmのポリイミドフィルムを得た。
[Example 9]
A polyimide film having a thickness of 35 μm was obtained in the same procedure as in Example 3 except that PPD, 4,4′-ODA, BPDA, and PMDA were used in a molar ratio of 40/60/25/75.
[実施例10]
PPD、4,4’−ODA、BPDA、PMDAをモル比45/55/35/65の割合とすること以外は、実施例3と同様の手順で、厚さ35μmのポリイミドフィルムを得た。
[Example 10]
A polyimide film having a thickness of 35 μm was obtained in the same procedure as in Example 3 except that PPD, 4,4′-ODA, BPDA, and PMDA were used in a molar ratio of 45/55/35/65.
実施例2〜8で得られたポリイミドフィルムおよび、それらを用いて実施例1と同様の手順で作成した両面銅張り積層板、評価用COF基板は、実施例1と同様にその特性を評価し、表1にその結果を示した。 The polyimide films obtained in Examples 2 to 8 and the double-sided copper-clad laminates and COF substrates for evaluation that were prepared in the same procedure as in Example 1 were evaluated for the characteristics in the same manner as in Example 1. Table 1 shows the results.
上記表の結果から、実施例のポリイミドフィルムは、表面平滑性、寸法安定性、折り曲げ性などに優れたフィルムであるといえる。また、フィルム両面の表面平滑性のバランスに優れるため、フィルムの取り扱い性も良く、高い生産性を維持できるフィルムであることが確認できた。 From the result of the said table | surface, it can be said that the polyimide film of an Example is a film excellent in surface smoothness, dimensional stability, bendability, etc. Moreover, since it was excellent in the balance of the surface smoothness of both surfaces of a film, it was confirmed that the film was easy to handle and could maintain high productivity.
本発明のポリイミドフィルムは、寸法安定性、折り曲げ特性などに優れている。また、本発明では、両面において高い表面品位を有するフィルムを得ることができる。そのため、このような本発明のポリイミドフィルムは、特に高密度実装を目的に両面に配線を施した両面COF等のファインピッチ回路基板や半導体パッケージに好適に用いることができる。 The polyimide film of the present invention is excellent in dimensional stability, bending characteristics, and the like. In the present invention, a film having high surface quality on both sides can be obtained. Therefore, such a polyimide film of the present invention can be suitably used for a fine pitch circuit board such as a double-sided COF in which wiring is provided on both sides for the purpose of high-density mounting and a semiconductor package.
Claims (12)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017066471 | 2017-03-29 | ||
| JP2017066471 | 2017-03-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018168358A true JP2018168358A (en) | 2018-11-01 |
| JP7109946B2 JP7109946B2 (en) | 2022-08-01 |
Family
ID=63876078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018049912A Active JP7109946B2 (en) | 2017-03-29 | 2018-03-16 | polyimide film |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7109946B2 (en) |
| KR (1) | KR102466340B1 (en) |
| CN (1) | CN108795040A (en) |
| TW (1) | TWI780124B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019002001A (en) * | 2017-06-09 | 2019-01-10 | 三星電子株式会社Samsung Electronics Co., Ltd. | Film containing polyimide or poly(amide-imide) copolymer, display device including that film, and method for preparing that film |
| JP2019073659A (en) * | 2017-10-18 | 2019-05-16 | 東レ・デュポン株式会社 | Polyimide film |
| WO2020251121A1 (en) * | 2019-06-11 | 2020-12-17 | 피아이첨단소재 주식회사 | Polyimide film and method for manufacturing polyimide film |
| JP2022102248A (en) * | 2020-12-25 | 2022-07-07 | 日鉄ケミカル&マテリアル株式会社 | Metal-clad laminate and flexible circuit board |
| JP2022545961A (en) * | 2019-08-29 | 2022-11-01 | ピーアイ アドヴァンスド マテリアルズ カンパニー リミテッド | Polyimide film and its manufacturing method |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113386416B (en) * | 2021-07-08 | 2022-12-16 | 江西柔顺科技有限公司 | Heat-conducting double-sided copper-clad plate and preparation method thereof |
| KR20240027052A (en) * | 2021-09-08 | 2024-02-29 | 고쿠리쯔 다이가쿠 호징 츠쿠바 다이가쿠 | Semiconductor devices and methods of manufacturing semiconductor devices |
| KR102689315B1 (en) * | 2021-12-20 | 2024-07-29 | 에스케이마이크로웍스 주식회사 | Film, multilayer electronic device, and manufacturing method of the film |
| US12410524B2 (en) | 2021-12-24 | 2025-09-09 | National University Corporation, Iwate University | Method for manufacturing laminate |
| CN114914774B (en) * | 2022-07-13 | 2022-10-25 | 深圳市卓汉材料技术有限公司 | Grounding elastic terminal, manufacturing method and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008290302A (en) * | 2007-05-23 | 2008-12-04 | Du Pont Toray Co Ltd | Copper plate |
| JP2008290304A (en) * | 2007-05-23 | 2008-12-04 | Du Pont Toray Co Ltd | Copper plate |
| JP2013018926A (en) * | 2011-07-14 | 2013-01-31 | Du Pont-Toray Co Ltd | Polyimide film |
| JP2016132744A (en) * | 2015-01-21 | 2016-07-25 | 東レ・デュポン株式会社 | Polyimide film |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006001270A1 (en) * | 2004-06-29 | 2006-01-05 | Kaneka Corporation | Novel polyimide film |
| JP2008106140A (en) * | 2006-10-25 | 2008-05-08 | Du Pont Toray Co Ltd | Polyimide film and method for producing the same |
| JP6035678B2 (en) | 2013-02-19 | 2016-11-30 | 住友金属鉱山株式会社 | Method for manufacturing flexible wiring board and flexible wiring board |
| TWI545013B (en) * | 2014-09-18 | 2016-08-11 | 達勝科技股份有限公司 | Polyimide metal laminate and a method of fabricating the same |
| JP6735542B2 (en) * | 2015-08-25 | 2020-08-05 | 東レ・デュポン株式会社 | Polyimide film and manufacturing method thereof |
-
2018
- 2018-03-09 TW TW107108047A patent/TWI780124B/en active
- 2018-03-16 JP JP2018049912A patent/JP7109946B2/en active Active
- 2018-03-20 KR KR1020180031876A patent/KR102466340B1/en active Active
- 2018-03-28 CN CN201810263962.4A patent/CN108795040A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008290302A (en) * | 2007-05-23 | 2008-12-04 | Du Pont Toray Co Ltd | Copper plate |
| JP2008290304A (en) * | 2007-05-23 | 2008-12-04 | Du Pont Toray Co Ltd | Copper plate |
| JP2013018926A (en) * | 2011-07-14 | 2013-01-31 | Du Pont-Toray Co Ltd | Polyimide film |
| JP2016132744A (en) * | 2015-01-21 | 2016-07-25 | 東レ・デュポン株式会社 | Polyimide film |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019002001A (en) * | 2017-06-09 | 2019-01-10 | 三星電子株式会社Samsung Electronics Co., Ltd. | Film containing polyimide or poly(amide-imide) copolymer, display device including that film, and method for preparing that film |
| JP7220025B2 (en) | 2017-06-09 | 2023-02-09 | 三星電子株式会社 | Films comprising polyimides or poly(amide-imide) copolymers, displays comprising such films, and methods of making such films |
| JP2019073659A (en) * | 2017-10-18 | 2019-05-16 | 東レ・デュポン株式会社 | Polyimide film |
| JP7109176B2 (en) | 2017-10-18 | 2022-07-29 | 東レ・デュポン株式会社 | polyimide film |
| WO2020251121A1 (en) * | 2019-06-11 | 2020-12-17 | 피아이첨단소재 주식회사 | Polyimide film and method for manufacturing polyimide film |
| KR20200141685A (en) * | 2019-06-11 | 2020-12-21 | 피아이첨단소재 주식회사 | Polyimide film and manufacturing method thereof |
| KR102202472B1 (en) * | 2019-06-11 | 2021-01-13 | 피아이첨단소재 주식회사 | Polyimide film and manufacturing method thereof |
| JP2022545961A (en) * | 2019-08-29 | 2022-11-01 | ピーアイ アドヴァンスド マテリアルズ カンパニー リミテッド | Polyimide film and its manufacturing method |
| JP2022102248A (en) * | 2020-12-25 | 2022-07-07 | 日鉄ケミカル&マテリアル株式会社 | Metal-clad laminate and flexible circuit board |
| JP7620428B2 (en) | 2020-12-25 | 2025-01-23 | 日鉄ケミカル&マテリアル株式会社 | Metal-clad laminates and flexible circuit boards |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI780124B (en) | 2022-10-11 |
| KR20180110597A (en) | 2018-10-10 |
| JP7109946B2 (en) | 2022-08-01 |
| CN108795040A (en) | 2018-11-13 |
| TW201839054A (en) | 2018-11-01 |
| KR102466340B1 (en) | 2022-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7109946B2 (en) | polyimide film | |
| JP7109176B2 (en) | polyimide film | |
| JP5262030B2 (en) | Polyimide film and copper-clad laminate based thereon | |
| JP6370609B2 (en) | Polyimide film | |
| CN109575283B (en) | Polyimide film, metal-clad laminate, and circuit board | |
| KR20150001662A (en) | Polyimide film | |
| JP7077064B2 (en) | Polyimide film | |
| JP6148556B2 (en) | Polyimide film | |
| JP2005314669A (en) | Polyimide film and copper-clad laminate based thereon | |
| JP2016132744A (en) | Polyimide film | |
| CN104754864B (en) | Flexible copper-clad laminated plates and flexible circuit board | |
| TWI899086B (en) | Polyimide film and its manufacturing method | |
| JP5985940B2 (en) | COF substrate for tablet devices | |
| JP2017179148A (en) | Polyimide film | |
| JP2006269615A (en) | Printed wiring board | |
| JP5571839B2 (en) | Polyimide film and copper-clad laminate based on the same | |
| JP6603021B2 (en) | Polyimide film | |
| JP2013199087A (en) | Polyimide film | |
| KR101210739B1 (en) | Flexible Metal-Clad Laminate Plate | |
| JP2024052391A (en) | Method for manufacturing laminated plate, and roll of laminate with protective film | |
| JP4516769B2 (en) | Method for producing semi-additive metal-clad laminate and semi-additive metal-clad laminate obtained thereby | |
| JP2025037537A (en) | Polyimide Film | |
| JP2006179574A (en) | Multilayere circuit board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210107 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20211222 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220118 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220310 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220705 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220720 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7109946 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |