JP2018157129A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To clean both of a holding pin and a spin base with a common nozzle while suppressing liquid splash.SOLUTION: A substrate processing apparatus comprises: a spin base; a holding pin that is built in the spin base and holds a peripheral part of a substrate; a rotational mechanism that rotates the spin base; a guard that surrounds the spin base while being opposite to the periphery of the spin base; a cleaning liquid supply mechanism that supplies a cleaning liquid so as to be changed a flow rate; a nozzle in which at least one part is provided on an inner side and which can discharge the cleaning liquid supplied from the cleaning liquid supply mechanism; and a control part that controls the supply of the cleaning liquid by the cleaning liquid supply mechanism. The control part performs a first control that supplies the cleaning liquid of a first flow amount to the cleaning liquid supply mechanism so that a first cleaning operation for cleaning the holding pin so as to contact the cleaning liquid to the holding pin, and a second control that supplies the cleaning liquid of a second flow amount less than the first flow amount to the cleaning liquid supply mechanism so as to perform a second cleaning operation for cleaning the spin base by the nozzle while contacting the cleaning liquid to a side surface of the spin base.SELECTED DRAWING: Figure 7

Description

  The present invention includes a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a glass substrate for a photomask, a substrate for a solar cell, etc. The present invention relates to a substrate processing technique for performing processing on a substrate simply).

  Patent Document 1 discloses a substrate processing apparatus including a spin chuck that rotates while holding a substrate. The spin chuck includes a spin base and a holding pin (“chuck pin”) erected from the periphery of the spin base. The apparatus sequentially performs a sulfuric acid-containing liquid supply process for supplying a sulfuric acid-containing liquid, a rinsing liquid supply process, and an organic solvent supply process for supplying an organic solvent to a substrate rotated by a spin chuck. The apparatus further includes a first nozzle that discharges the cleaning liquid from below to both the side surface and the lower surface peripheral edge of the spin base, and a second nozzle that discharges the cleaning liquid to the inner wall of a cylindrical guard surrounding the substrate. The discharge port of the first nozzle and the discharge port of the second nozzle are respectively opened on the outer peripheral surface of the casing that covers the rotation mechanism that rotates the spin base from below. The apparatus discharges the cleaning liquid from the first and second nozzles after the completion of the sulfuric acid-containing liquid supply process, prior to the start of the organic solvent supply process, or during or after execution of the organic solvent supply process. And supplying a cleaning liquid to the wall surface of the spin base. Thereby, the said apparatus is aiming at suppression that the sulfuric acid containing liquid supplied in a sulfuric acid containing liquid supply process and the organic solvent supplied in an organic solvent supply process are mixed.

Japanese Unexamined Patent Publication No. 2016-42518

  In the single-wafer type substrate processing apparatus, not only the side surface of the spin base but also the holding pins that hold the periphery of the substrate may be contaminated with the processing liquid. However, in the substrate processing apparatus of Patent Document 1, the first nozzle that discharges the cleaning liquid to the side surface of the spin base is provided in the lower part of the spin base. The cleaning liquid discharged from the first nozzle is blocked by the spin base and cannot reach the holding pin. For this reason, the chuck pin cannot be cleaned with the cleaning liquid discharged from the first nozzle.

  The present invention has been made to solve these problems, and in a substrate processing apparatus that holds a substrate by a holding pin standing upright from a spin base and processes the substrate while rotating the spin base, the holding pin and the spin An object is to provide a technique capable of cleaning both the base and the base.

  In order to solve the above-described problem, a substrate processing apparatus according to a first aspect includes a spin base that has a horizontal upper surface and is rotatable about a vertical rotation axis, and is erected on the spin base. A holding pin that holds the peripheral edge of the substrate that is spaced from the upper surface of the base, a rotating mechanism that rotates the spin base, a guard that surrounds the spin base facing the peripheral edge of the spin base, and a flow rate of the cleaning liquid is variable. A cleaning liquid supply mechanism for supplying, a nozzle that is provided at least partially inside the guard and capable of discharging the cleaning liquid supplied by the cleaning liquid supply mechanism, and a control unit that controls supply of the cleaning liquid by the cleaning liquid supply mechanism And the control unit applies the cleaning liquid so that the nozzle performs a first cleaning operation of cleaning the holding pin by applying the cleaning liquid to the holding pin. The cleaning liquid supply mechanism so that the nozzle performs a first control for supplying the cleaning liquid at a first flow rate to the supply mechanism and a second cleaning operation for cleaning the spin base by applying the cleaning liquid to a side surface of the spin base. And a second control for supplying the cleaning liquid at a second flow rate smaller than the first flow rate.

  The substrate processing apparatus which concerns on a 2nd aspect is a substrate processing apparatus which concerns on a 1st aspect, Comprising: The said nozzle is attached to the said guard.

  The substrate processing apparatus which concerns on a 3rd aspect is a substrate processing apparatus which concerns on the 1st or 2nd aspect, Comprising: It further has the 1st process liquid supply part which supplies a 1st process liquid to the upper surface of the said board | substrate, The controller controls the cleaning liquid supply mechanism so as to perform the first cleaning operation or the second cleaning operation in parallel with the supply of the first processing liquid.

  The substrate processing apparatus which concerns on a 4th aspect is a substrate processing apparatus which concerns on a 3rd aspect, Comprising: The 2nd process liquid which is a removal liquid which removes the film formed in the upper surface of the said board | substrate by an etching or peeling is supplied And a second treatment liquid supply unit for removing the reaction product or residue present on the upper surface of the substrate from the upper surface of the substrate after the second treatment liquid is supplied. The processing liquid supplied to the upper surface of the substrate.

  The substrate processing apparatus which concerns on a 5th aspect is a substrate processing apparatus which concerns on a 4th aspect, Comprising: The said control part can control rotation of the said spin base by the said rotation mechanism, The said control part is the said When the first processing liquid is supplied to the upper surface of the substrate by the first processing liquid supply unit, the spin base is rotated at a first rotation speed, and the second processing liquid is supplied by the second processing liquid supply unit. When being supplied to the upper surface of the substrate, the substrate is rotated at a second rotation speed lower than the first rotation speed.

  A substrate processing apparatus according to a sixth aspect is the substrate processing apparatus according to any one of the third to fifth aspects, wherein the first processing liquid and the cleaning liquid are safe to mix, and , A combination of liquids that does not produce a reaction product.

  A substrate processing apparatus according to a seventh aspect is the substrate processing apparatus according to any one of the second to sixth aspects, further comprising a base surface that supports the rotating mechanism from below, wherein the nozzle is the first The height of the guard from the base surface when performing one cleaning operation is substantially equal to the height from the base surface of the guard when the nozzle performs the second cleaning operation.

  A substrate processing apparatus according to an eighth aspect is the substrate processing apparatus according to any one of the first to seventh aspects, wherein the main surface is opposed to the upper surface of the substrate held by the holding pins with a gap. A plate-shaped blocking plate including a surface, and the upper portion of the guard extends toward the rotation shaft, and an inner peripheral edge of the upper portion of the guard is the blocking plate when performing the first cleaning operation. Opposite to the side.

  A substrate processing apparatus according to a ninth aspect is the substrate processing apparatus according to any one of the first to eighth aspects, wherein the first flow rate is determined by the rotation of the cleaning liquid discharged from the nozzle in the plan view. The flow rate is set so that it can be directly applied to a holding pin located on the opposite side of the nozzle with an axis.

  A substrate processing apparatus according to a tenth aspect is the substrate processing apparatus according to the ninth aspect, wherein a processing liquid is supplied to the upper surface of the spin base toward the lower surface of the substrate held by the holding pins. A lower surface nozzle is provided, and the cleaning liquid discharged from the nozzle in the first cleaning operation flies along a locus that does not interfere with the lower surface nozzle, and is positioned on the opposite side of the nozzle across the rotation axis in plan view. Directly hit the holding pin.

  A substrate processing method according to an eleventh aspect is a substrate processing method by a substrate processing apparatus, wherein the substrate processing apparatus has a horizontal upper surface and is rotatable about a vertical rotation axis, and the spin A holding pin that is erected on the base and holds a peripheral portion of the substrate that is spaced from the upper surface of the spin base, a rotation mechanism that rotates the spin base, and surrounds the spin base so as to face the peripheral edge of the spin base A guard, and a nozzle that is provided at least partially inside the guard and capable of discharging a predetermined cleaning liquid, and the substrate processing method applies the cleaning liquid to the holding pin to clean the holding pin. A first step of supplying a first flow rate of the cleaning liquid to the nozzle so that the nozzle performs one cleaning operation; and applying the cleaning liquid to a side surface of the spin base and The second cleaning operation for cleaning the Nbesu so that the nozzle does, and a second step of supplying a less the cleaning solution of the second flow rate than the first flow rate to said nozzle.

  According to the first aspect of the invention, the control unit causes the cleaning liquid supply mechanism to supply the cleaning liquid at the first flow rate so that the nozzle performs a first cleaning operation in which the cleaning liquid is applied to the holding pins to clean the holding pins. A first control and a second flow of cleaning liquid that is less than the first flow rate are supplied to the cleaning liquid supply mechanism so that the nozzle performs a second cleaning operation of cleaning the spin base by applying the cleaning liquid to the side surface of the spin base. 2 control. Therefore, the nozzle supplies the cleaning liquid at a high speed in the first operation for cleaning the holding pin, and supplies the cleaning liquid at a low speed in the second operation for cleaning the spin base. Accordingly, the cleaning liquid supplied in the first operation proceeds along a straight path without being affected by the gravitational force, and the cleaning liquid supplied in the second operation is strongly influenced by the gravitational force and is arcuate. Proceed while turning downward along the route. As a result, both the holding pin and the spin base located below the holding pin can be cleaned with a common nozzle.

  According to the second aspect of the invention, since the nozzle is attached to the guard, a separate member for attaching the nozzle becomes unnecessary.

  According to the third aspect of the invention, the first processing liquid supply unit supplies the first processing liquid to the upper surface of the substrate in parallel with the first or second cleaning operation by the nozzle. Accordingly, the substrate processing time can be shortened.

  According to the fourth aspect of the invention, the apparatus further includes a second processing liquid supply unit that supplies a second processing liquid (a liquid for removing a film formed on the upper surface of the substrate by etching or peeling). The supply of the second processing liquid may contaminate the chuck pin or the spin base. However, after the second processing liquid is supplied, the first or second cleaning is performed to contaminate the chuck pin or the spin base. The chuck pins and spin base can be cleaned.

  According to the fifth aspect of the invention, since the first or second cleaning is performed while rotating the spin base at a relatively high rotational speed, the chuck pins and the spin base can be cleaned with high efficiency.

  According to the sixth aspect of the invention, the chemical liquid and the cleaning liquid are a combination of liquids that are safe to mix and that do not generate reaction products. Accordingly, since the chemical liquid and the cleaning liquid can be discharged through the same discharge path, the structure of the discharge path can be simplified and the discharged liquid can be easily handled.

  According to the seventh aspect of the invention, the nozzle is attached to the guard, and the height of the guard when the nozzle performs the first cleaning operation and the height of the guard when the nozzle performs the second cleaning operation. Are approximately equal. Therefore, the heights of the nozzles in the first cleaning operation and the second cleaning operation can be easily made substantially equal.

  According to the eighth aspect of the invention, when the first cleaning operation is performed, the inner peripheral edge of the upper part of the guard faces the side surface of the blocking plate, so that the cleaning liquid bounced off by the holding pin diffuses out of the guard. This can be suppressed.

  According to the ninth aspect of the invention, the first flow rate when the first cleaning is performed is such that the cleaning liquid discharged from the nozzle directly hits the holding pin located on the opposite side of the nozzle across the rotation shaft in plan view. It is set to the flow rate that can be. For this reason, the side surface which does not oppose the rotating shaft of a holding pin is washable.

  According to the tenth aspect, it is possible to prevent the cleaning liquid discharged from the nozzle from interfering with the lower surface nozzle.

It is a schematic side view which shows the structural example of the substrate processing apparatus concerning embodiment. 3 is a flowchart showing an example of the operation of the substrate processing apparatus of FIG. 1. FIG. 3 is a flowchart illustrating an example of an operation of an intermediate (final) rinse process in FIG. 2. It is a flowchart which shows an example of the operation | movement in the SC1 process of FIG. It is a schematic side view for demonstrating the static elimination process of FIG. It is a schematic side view for demonstrating the SPM process of FIG. It is a schematic side view for demonstrating the intermediate | middle rinse process and SC1 process of FIG. It is a schematic side view for demonstrating the organic-solvent replacement process of FIG. It is a schematic side view for demonstrating the spin dry of FIG. FIG. 3 is a conceptual side view of a spin base at the time of step S130 in FIG. FIG. 11 is a conceptual top view of the spin base 21 of FIG. 10.

  Hereinafter, embodiments will be described with reference to the drawings. The following embodiment is an example embodying the present invention, and is not an example of limiting the technical scope of the present invention. In each of the drawings referred to below, the size and number of each part may be exaggerated or simplified for easy understanding. The vertical direction is the vertical direction, and the substrate side is above the spin base.

<1. Configuration of Substrate Processing Apparatus 1>
FIG. 1 is a schematic side view illustrating a configuration example of a substrate processing apparatus 1 according to the embodiment. The substrate processing apparatus 1 is a single wafer processing apparatus that processes substrates W such as silicon wafers one by one. The surface shape of the substrate W is substantially circular. A thin film such as a resist film is formed on the upper surface of the substrate W. FIG. 1 shows a state in which the blocking plate 90 is disposed at the retracted position. In addition, the shielding plate 90 arranged at a predetermined proximity position with respect to the substrate W is indicated by a virtual line. The loading / unloading of the substrate W to / from the substrate processing apparatus 1 is performed by a robot or the like in a state where the blocking plate 90 is disposed at the retracted position. The substrate W carried into the substrate processing apparatus 1 is detachably held by the spin chuck 2.

  The substrate processing apparatus 1 includes a box-shaped chamber 11 having a base surface 1a, a spin chuck 2, a splash prevention unit 3, a removal liquid supply unit 4, a chemical liquid supply unit 5, a cleaning liquid supply unit 6, a rinse liquid supply unit 7, an organic A solvent supply unit 8, a surface protection unit 9, and a control unit 130 are provided. Each of these units 2 to 9 is electrically connected to the control unit 130 and operates in response to an instruction from the control unit 130. As the control unit 130, for example, the same one as a general computer can be adopted. That is, the control unit 130 includes, for example, a CPU (not shown) that performs various arithmetic processes, a ROM (not shown) that is a read-only memory that stores basic programs, and a RAM (a readable and writable memory that stores various information). (Not shown), a magnetic disk (not shown) for storing a control program PG1, data, and the like. In the control unit 130, the CPU as the main control unit performs arithmetic processing according to the procedure described in the program PG1, thereby controlling each unit of the substrate processing apparatus 1.

  The chamber 11 accommodates the spin chuck 2 and nozzles. An FFU (fan filter unit) 12 as a blower unit that sends clean air (air filtered by a filter) into the chamber 11 is provided on the upper portion of the chamber 11. The FFU 12 generates a downward airflow (“downflow”) of clean air in the chamber 11 during the processing of the substrate W.

  An exhaust port 13 is opened at the lower part of the chamber 11. An exhaust duct 14 is connected to the exhaust port 13. The exhaust duct 14 is connected to an exhaust device (not shown) such as a factory where the substrate processing apparatus 1 is installed. The atmosphere in the chamber 11 is exhausted from the exhaust port 13 through the exhaust duct 14 to the exhaust device.

<Spin chuck 2>
The spin chuck 2 is a substrate holding unit that holds the substrate W in a substantially horizontal posture with one main surface thereof facing upward, and the substrate W is vertically rotated through the center c1 of the main surface. Rotate in the circumferential direction around the axis a1.

  The spin chuck 2 includes a spin base (“holding member”) 21 that is a disk-shaped member that is slightly larger than the substrate W. The spin base 21 includes a horizontal upper surface, a lower surface, and side surfaces that connect peripheral edges of the upper surface and the lower surface. The spin base 21 is formed with a cylindrical through-hole 21a that opens at the center of the upper surface and the lower surface thereof so that the central axis thereof coincides with the rotation axis a1. A cylindrical rotary shaft 22 is connected to the lower opening of the through hole 21a. Thereby, the through-hole 21a and the hollow part of the rotating shaft part 22 are connected. The rotating shaft portion 22 is arranged in such a posture that its axis is along the vertical direction. In addition, a rotation drive unit (for example, a motor) 23 is connected to the rotation shaft unit 22. The rotation drive unit 23 drives the rotation shaft unit 22 to rotate about its axis. The axis of the rotary shaft portion 22 coincides with the rotary shaft a1. Therefore, the spin base 21 can rotate around the rotation axis a <b> 1 together with the rotation shaft portion 22. The rotating shaft portion 22 and the rotation driving portion 23 are accommodated in a cylindrical casing 24. The casing 24 is made of a resin such as PVC (vinyl chloride). The removal liquid supply unit 4 described later supplies high-temperature SPM to the substrate W. When this SPM adheres to the casing 24, the casing 24 deteriorates, for example, turns white.

  The spin chuck 2 includes a supply pipe 27 that is disposed through the hollow portion of the rotary shaft portion 22. The tip (upper end) of the supply tube 27 is connected to the lower opening of the through hole 21a so that the supply tube 27 and the through hole 21a of the spin base 21 communicate with each other. A lower surface nozzle 50 is connected to an opening on the upper side (substrate W side) of the through hole 21a. The lower surface nozzle 50 includes a discharge port facing the lower surface of the rotating substrate W held by the spin base 21.

One end of a pipe 27 a is connected to the lower end of the supply pipe 27. The other end of the pipe 27a, CO ₂ water supplying CO ₂ water supply source 28 is connected to the intermediate path of the piping 27a is on-off valve 29 is provided which is opened or closed by a control unit 130.

Therefore, when the on-off valve 29 is opened, the lower surface nozzle 50 is supplied with CO ₂ water through the supply pipe 27 from the CO ₂ water source 28. The CO ₂ water is used for neutralizing the substrate W. The lower surface nozzle 50 discharges CO ₂ water upward from its discharge port to the lower surface of the substrate.

  A plurality of (for example, six) chuck pins 25 are provided in the vicinity of the peripheral edge of the upper surface of the spin base 21 with appropriate intervals. The chuck pins 25 are in contact with the end face of the substrate W to position the substrate W in the horizontal direction, and at a position slightly higher than the upper surface of the spin base 21 (ie, at a predetermined interval from the upper surface of the spin base 21). The substrate W is detachably held in a substantially horizontal posture. That is, the chuck pins 25 hold the peripheral edge of the substrate W with a gap from the upper surface of the spin base 21. Thereby, the spin base 21 holds the substrate W substantially horizontally from below via the chuck pins 25. The upper surface of the spin base 21 faces the lower surface of the substrate W, for example, substantially in parallel with a gap.

  In this configuration, when the rotation drive unit 23 rotates the rotation shaft unit 22 with the spin base 21 holding the substrate W thereon by the chuck pins 25, the spin base 21 is centered on the axis along the vertical direction. Thus, the substrate W held above the spin base 21 is rotated around a vertical rotation axis a1 passing through the center c1 in the plane. The rotation drive unit 23 and the rotation shaft unit 22 are a rotation mechanism 231 that rotates the spin base 21 around the rotation axis a1.

<Spattering prevention part 3>
The scattering prevention unit 3 receives a processing liquid or the like scattered from the substrate W rotated together with the spin base 21. In the present specification, the processing liquid is a general term for various liquids (such as a rinsing liquid, a removing liquid, a chemical liquid, and an organic solvent) used in the substrate processing apparatus 1.

  The scattering prevention unit 3 includes a splash guard 31. The splash guard 31 is a cylindrical member having an open upper end and is provided so as to surround the spin chuck 2. In this embodiment, the splash guard 31 includes, for example, a bottom member 311, an inner member (also referred to as “inner guard” or simply “guard”) 312, and an outer member (also referred to as “outer guard”) 313. It is configured to include three members. The external member 313 may not be provided, and conversely, a guard may be further provided outside the outer member 313 so as to surround the spin chuck 2.

  The bottom member 311 is a cylindrical member having an open upper end, and has an annular bottom, a cylindrical inner wall extending upward from the inner edge of the bottom, and a cylinder extending upward from the outer edge of the bottom. A shaped outer wall. At least the vicinity of the tip of the inner wall portion is accommodated in an inner space of a bowl-shaped member 241 provided in the casing 24 of the spin chuck 2.

  A pipe 32 communicating with the space between the inner wall portion and the outer wall portion is connected to the bottom portion of the bottom member 311. The pipe 32 is branched into pipes 33 and 34. The tips of the pipes 33 and 34 are connected to separate tanks (not shown). The pipes 33 and 34 are provided with on-off valves 35 and 36. When the control unit 130 selectively opens one of the on-off valves 35 and 36, the liquid collected at the bottom of the bottom member 311 passes through the pipe 32 and is selectively introduced into the pipe 33 and the pipe 34. It is collected in each tank to which each pipe is connected.

  The inner member 312 is a cylindrical member having an open upper end, and the upper portion (“upper end portion”, “upper end portion”) of the inner member 312 extends inward and upward. That is, the upper part extends obliquely upward toward the rotation axis a1. In other words, the upper part of the inner member 312 extends toward the rotation axis a1. A cylindrical inner peripheral wall portion extending downward along the upper inner peripheral surface and a cylindrical outer peripheral wall portion extending downward along the upper outer peripheral surface are formed at the lower portion of the inner member 312. A gap is formed between the inner member 312 and the outer member 313. A nozzle 64 of a cleaning liquid supply unit 6 to be described later is attached to a connecting portion that connects the upper portion and the inner peripheral wall portion (outer peripheral wall portion) of the inner member 312. At least the upper end side portion of the outer wall portion of the bottom member 311 is accommodated between the inner peripheral wall portion and the outer peripheral wall portion of the inner member 312. The length of the accommodated portion increases as the inner member 312 approaches the bottom member 311. The processing liquid received by the upper part of the inner member 312 is discharged to the outside of the scattering prevention unit 3 through the bottom member 311.

  The outer member 313 is a cylindrical member having an open upper end and is provided outside the inner member 312. The upper part (“upper end portion”, “upper end portion”) of the external member 313 extends inward and upward. That is, the upper part extends obliquely upward toward the rotation axis a1. In other words, the upper part of the outer member 313 is extended toward the rotation axis a1. The lower portion extends downward along the outer peripheral wall portion of the inner member 312. The processing liquid received by the upper part of the outer member 313 is discharged from the gap between the outer peripheral wall part of the inner member 312 and the lower part of the outer member 313. The discharged processing liquid or the like is received by an annular liquid receiving member (not shown) provided below the outer member 313 so as to surround the spin chuck 2, and passes through a drain groove that communicates with the bottom of the liquid receiving member. Then, it is discharged out of the substrate processing apparatus 1.

  The splash guard 31 is connected to a guard driving mechanism (“elevating drive unit”) 37 that moves the splash guard 31 up and down. For example, the guard driving mechanism 37 includes a stepping motor. In this embodiment, the guard drive mechanism 37 raises and lowers the inner member 312 and the outer member 313 independently of the three members 311, 312, and 313 included in the splash guard 31.

  The guard drive mechanism 37 is between an upper position P1 (see FIG. 6) and a lower position P3 (see FIG. 5 etc.) where the upper ends of the guards (inner member 312 and outer member 313) are located below the substrate W. The members 312 and 313 are moved up and down. The upper position P1 of each member 312, 313 is a position set above the midway position P2 (see FIG. 7 and the like). More specifically, the upper position P1 is below the lower end surface of the arm 49 when the nozzle 44 of the removal liquid supply unit 4 is disposed at the processing position, and is the upper surface of the blocking plate 90 disposed at the close position. It is a position above.

  On the other hand, the lower position P <b> 3 of each member 312, 313 is a position where the upper edge of the member 312, 313 is disposed below the upper surface of the spin base 21. The upper position P1 (lower position P3) of the external member 313 is positioned slightly above the upper position P1 (lower position P3) of the inner member 312.

  The intermediate position P2 of each member 312, 313 is a height position between the above-described upper position P1 and lower position P3, and the inner peripheral edge of the upper part of each member 312, 313 is disposed at a close position. It is a position facing the side surface of 90. When the inner member 312 is disposed at the midway position P <b> 2, the nozzle 64 faces the rotation locus of the chuck pin 25 in the horizontal plane. The inner member 312 disposed at the upper position P1 or the middle position P2 surrounds the spin base 21 so as to face the peripheral edge (side surface) of the spin base 21. The midway position P2 of the external member 313 is located slightly above the midway position P2 of the inner member 312.

  The guard drive mechanism 37 can hold the members 312 and 313 at an arbitrary position between the upper position P1 and the lower position P3. Specifically, the guard driving mechanism 37 holds the members 312, 313 at the upper position P1, the lower position P3, and the midway position P2 set between the upper position P1 and the lower position P3. The inner member 312 and the outer member 313 are raised or lowered simultaneously or sequentially so as not to collide with each other.

  The guard drive mechanism 37 is electrically connected to the control unit 130 and operates under the control of the control unit 130. That is, the position of the splash guard 31 (specifically, the height position of each of the inner member 312 and the outer member 313. That is, the distance in the vertical direction from the base surface 1a of each of the inner member 312 and the outer member 313). Is controlled by the control unit 130.

<Removed liquid supply unit 4>
The removal liquid supply unit (“second treatment liquid supply unit”) 4 supplies a removal liquid (“second treatment liquid”) for removing the film formed on the upper surface of the substrate W by etching or peeling to the upper surface of the substrate W. Means. Here, the removal liquid supply unit 4 supplies an SPM (sulfuric acid / hydrogen peroxide mixture), that is, a sulfuric acid / hydrogen peroxide mixture, to the upper surface of the substrate W as a removal liquid in order to remove the resist film on the upper surface of the substrate W. To do. The removal liquid supply unit 4 may supply another removal liquid (for example, a treatment liquid containing hydrochloric acid, hydrofluoric acid, or the like) to the upper surface of the substrate W. The removal liquid supply unit 4 connects a removal liquid supply source 41, a nozzle (“removal liquid nozzle”) 44, an arm 49 to which the nozzle 44 is attached at the tip, and the removal liquid supply source 41 and the nozzle 44. A pipe 42, an on-off valve 43 provided in the pipe 42, and a nozzle moving mechanism 47 are provided. The nozzle moving mechanism 47 is connected to the arm 49 and rotates the arm 49 bi-directionally around a predetermined vertical axis. As a result, the nozzle moving mechanism 47 moves (scans) the nozzle 44 along an arcuate path parallel to the substrate W passing above the central portion of the substrate W while the nozzle 44 is discharging SPM. Let The nozzle moving mechanism 47 includes a servo motor and the like.

  The nozzle 44 is, for example, a straight nozzle that discharges liquid in a continuous flow state. In this embodiment, the discharge port 44a is formed in the outer peripheral surface of the body of the nozzle 44, and SPM is discharged from the discharge port 44a sideways. However, instead of this configuration, a configuration may be adopted in which a discharge port is formed at the lower end of the body of the nozzle 44 and SPM is discharged downward from the discharge port.

  The removal liquid supply source 41 supplies SPM via the pipe 42. In this embodiment, the SPM supplied to the pipe 42 is at a high temperature (for example, about 140 ° C. to about 160 ° C.). The SPM that has been heated to the high temperature by the reaction heat of sulfuric acid and hydrogen peroxide is supplied to the pipe 42.

  When the on-off valve 43 is opened, high-temperature SPM supplied from the pipe 42 to the nozzle 44 is discharged from the discharge port 44 a of the nozzle 44. When the on-off valve 43 is closed, the discharge of high-temperature SPM from the nozzle 44 is stopped. In accordance with control by the control unit 130, the nozzle moving mechanism 47 includes a processing position where the high-temperature SPM discharged from the nozzle 44 is supplied near the center of the upper surface of the substrate W, and the nozzle 44 is lateral to the spin chuck 2 in plan view. The nozzle 44 is moved between the retracted position and the retracted position. Thus, the position of the nozzle 44 and the supply of SPM by the nozzle 44 are controlled by the control unit 130.

<Chemical solution supply unit 5>
The chemical solution supply unit (“first treatment solution supply unit”) 5 is a top surface of the substrate W for removing a chemical solution (also referred to as “cleaning chemical solution” or “first treatment solution”) for removing foreign particles such as particles or metal. To supply. In the embodiment, the chemical solution supply unit 5 supplies SC1 (ammonia hydrogen peroxide mixture), that is, an ammonia hydrogen peroxide solution mixed solution, as a chemical solution to the upper surface of the substrate W.

  The chemical supply unit 5 includes an SC1 supply source 51, a nozzle (“SC1 nozzle”) 54, an arm 59 attached to the tip of the nozzle 54, a pipe 52 connecting the SC1 supply source 51 and the nozzle 54, An open / close valve 53 provided in the pipe 52 and a nozzle moving mechanism 57 are provided. The nozzle moving mechanism 57 is connected to the arm 59, and rotates the arm 59 bidirectionally around a predetermined vertical axis. As a result, the nozzle moving mechanism 57 moves (scans) the nozzle 54 along an arcuate path that passes through the upper portion of the central portion of the substrate W and is parallel to the substrate W while the nozzle 54 is discharging SC1. ) The nozzle moving mechanism 57 includes a servo motor and the like.

  The nozzle 54 is, for example, a straight nozzle that discharges liquid in a continuous flow state. In this embodiment, the discharge port 54a is formed in the lower end part of the body of the nozzle 54, and SC1 is discharged downward from the discharge port 54a.

  The SC1 supply source 51 supplies SC1 via the pipe 52. When the on-off valve 53 is opened, SC1 supplied from the pipe 52 to the nozzle 54 is discharged from the discharge port 54a. When the on-off valve 53 is closed, the discharge of SC1 from the nozzle 54 is stopped. In accordance with control by the control unit 130, the nozzle moving mechanism 57 retreats to the side of the spin chuck 2 when the SC 1 discharged from the nozzle 54 is supplied to the vicinity of the center of the upper surface of the substrate W and the nozzle 54 in a plan view. The nozzle 54 is moved between the retracted position. Thus, the position of the nozzle 54 and the supply of SC1 by the nozzle 54 are controlled by the control unit 130. The chemical solution supply unit 5 may supply a hydrochloric acid hydrogen peroxide mixed solution (SC2), dilute hydrofluoric acid (DHF), or the like as the chemical solution instead of SC1.

<Cleaning liquid supply unit 6>
The cleaning liquid supply unit 6 supplies the cleaning liquid so as to hit the chuck pin 25 or the spin base 21, that is, to hit the spin chuck 2. The cleaning liquid hitting the spin base 21 flows downward and is supplied also to the side surface of the casing 24, more specifically, to the side surface of the bowl-shaped member 241.

  The cleaning liquid supply unit 6 includes a cleaning liquid supply mechanism 66 that supplies the cleaning liquid, and a nozzle (“cleaning liquid nozzle”) 64 that is supplied with the cleaning liquid from the cleaning liquid supply mechanism 66 and can discharge the cleaning liquid. The cleaning liquid supply mechanism 66 includes a pipe 62 whose one end is connected to the nozzle 64, a cleaning liquid supply source 61 which is connected to the other end of the pipe 62 and supplies the cleaning liquid to the pipe 62, and a flow rate control valve (“ Flow rate controller ") 63. A discharge port 64 a for discharging the cleaning liquid is formed at the tip of the nozzle 64.

The cleaning liquid supply source 61 supplies, for example, pure water, ozone water, reducing water (hydrogen water), CO ₂ water, etc., to the pipe 62 as the cleaning liquid. The flow control valve 63 is configured to be able to change its opening degree under the control of the control unit 130. The controller 130 changes the amount of cleaning liquid discharged from the nozzle 64 by changing the flow rate of the cleaning liquid flowing through the pipe 62 by changing the opening degree of the flow control valve 63. The flow rate control valve 63 can also stop the discharge of the cleaning liquid from the nozzle 64 by setting the opening degree to zero. That is, the cleaning liquid supply mechanism 66 can change the flow rate of the cleaning liquid to be supplied, and the control unit 130 controls the supply of the cleaning liquid by the cleaning liquid supply mechanism 66.

  The nozzle 64 is, for example, a straight nozzle that discharges liquid in a continuous flow state. The nozzle 64 is attached to the inner member 312. More specifically, the nozzle 64 is attached to the connection portion through the connection portion connecting the upper portion and the inner peripheral wall portion (outer peripheral wall portion) of the inner member 312. The discharge port 64a of the nozzle 64 is directed to the outer peripheral surface of the spin chuck 2, that is, the discharge direction of the discharge port 64a in the horizontal plane is preferably set to be approximately in the direction of the rotation axis a1. Further, the discharge angle of the discharge port 64a in the vertical direction is set to an angle such that when a high flow rate of liquid is discharged from the discharge port 64a, the discharge liquid takes an approximately horizontal locus. The height position of the nozzle 64 varies with the vertical movement of the inner member 312 as will be described later, but the discharge direction in the horizontal plane of the discharge port 64a is constant.

  A nozzle 64 that is fixed independently from the inner member 312 may be provided in an inner space surrounded by the inner member 312.

<Rinse Solution Supply Unit 7>
The rinsing liquid supply unit 7 supplies a rinsing liquid to the upper surface of the substrate W in order to perform a rinsing process on the upper surface of the substrate W. As the rinse liquid, for example, pure water, ozone water, reduced water (hydrogen water), CO ₂ water, or the like is employed. The rinsing liquid supply unit 7 includes a rinsing liquid supply source 71, a cylindrical nozzle 94 attached to the surface protection unit 9 described later, a pipe 72 that connects the rinsing liquid supply source 71 and the nozzle 94, and a pipe 72. And an on-off valve 73 provided. The control unit 130 controls the opening / closing of the opening / closing valve 73.

  The nozzle 94 is, for example, a straight nozzle that discharges liquid in a continuous flow state. The internal space of the nozzle 94 communicates with a through hole 95 formed in the central portion of the blocking plate 90.

  The rinse liquid supply source 71 supplies a rinse liquid via the pipe 72. When the on-off valve 73 is opened, the rinse liquid supplied from the pipe 72 to the nozzle 94 is discharged from the nozzle 94 through the through hole 95 so as to hit the center of the upper surface of the substrate W held by the spin chuck 2. When the on-off valve 73 is closed, the discharge of the rinse liquid from the nozzle 94 is stopped.

<Organic solvent supply unit 8>
The organic solvent supply unit 8 supplies an organic solvent for replacing the rinse liquid remaining on the upper surface of the substrate W held on the spin chuck 2 to the upper surface of the substrate W. In this embodiment, isopropyl alcohol (IPA) is employed as the organic solvent. In addition to IPA, methanol, ethanol, HFE (hydrofluoroether), acetone or the like may be employed as the organic solvent. Even if the substrate processing apparatus 1 does not include the organic solvent supply unit 8, the usefulness of the present invention is not impaired.

  The organic solvent supply unit 8 is provided in the organic solvent supply source 81, a cylindrical nozzle 94 attached to the surface protection unit 9, a pipe 82 connecting the organic solvent supply source 81 and the nozzle 94, and the pipe 82. And an open / close valve 83. That is, in this embodiment, the organic solvent supply unit 8 and the rinse liquid supply unit 7 share the nozzle 94. The organic solvent supply unit 8 may include a nozzle different from the nozzle 94. The control unit 130 controls the opening / closing of the opening / closing valve 83.

  The organic solvent supply source 81 supplies the organic solvent via the pipe 82. When the on-off valve 83 is opened, the organic solvent supplied from the pipe 82 to the nozzle 94 is discharged from the nozzle 94. When the on-off valve 83 is closed, the discharge of the organic solvent from the nozzle 94 is stopped.

<Surface protector 9>
The surface protection unit 9 protects the upper surface of the substrate W from splashing liquid such as cleaning liquid supplied to the chuck pins 25. When the cleaning liquid supply unit 6 supplies the cleaning liquid to the chuck pins 25 and cleans them, the surface protection unit 9 covers the upper surface with a slight gap from the upper surface of the substrate W held on the spin base 21. Thus, the upper surface of the substrate W is protected.

  The surface protection unit 9 includes a cylindrical nozzle 94. As described above, the rinse liquid supply source 71 (organic solvent supply source 81) of the rinse liquid supply unit 7 (organic solvent supply unit 8) supplies the rinse liquid (organic solvent) to the nozzle 94. The nozzle 94 discharges a rinsing liquid (organic solvent) toward the vicinity of the center of the upper surface of the substrate W held above the spin base 21. The central axis of the nozzle 94 coincides with the rotation axis a1. The surface protecting part 9 further includes a cylindrical rotating part 93 and a disc-shaped blocking plate 90. The rotating portion 93 is attached to the lower end portion through a bearing in a state where the lower end portion of the nozzle 94 is inserted. The central axis of the rotation part 93 coincides with the rotation axis a1. Thereby, the rotation part 93 can rotate in the circumferential direction around the nozzle 94 around the rotation axis a1.

  A disc-shaped blocking plate (“opposing member”) 90 is attached to the lower portion of the rotating portion 93 so as to be rotatable integrally with the rotating portion 93. The blocking plate 90 has a disk shape that is the same as or slightly larger than the substrate W, and the rotation axis a1 passes through the center thereof. Thereby, the interruption | blocking board 90 can rotate to the circumferential direction centering on the rotating shaft a1. The blocking plate 90 includes a lower surface (“main surface”) 91 that faces the entire upper surface of the substrate W, and a side surface 92 that stands upward from the periphery of the lower surface 91. The lower surface 91 is circular. A through hole 95 communicating with the nozzle 94 is provided in the central portion of the blocking plate 90. The lower surface 91 faces the upper surface of the substrate W held by the chuck pins 25 with a gap. The width of the gap varies depending on the height of the surface protection unit 9.

  A blocking plate rotating mechanism 97 is coupled to the rotating portion 93. The shielding plate rotating mechanism 97 includes an electric motor, a gear, and the like whose operation is controlled by the control unit 130, and rotates the rotating unit 93 in the circumferential direction around the rotation axis a1. Thereby, the blocking plate 90 rotates integrally with the rotating portion 93. More specifically, the blocking plate rotating mechanism 97 rotates the blocking plate 90 and the rotating unit 93 in the same direction at the same rotation speed as that of the substrate W under the control of the control unit 130.

  The upper end portion of the nozzle 94 is coupled to a blocking plate lifting mechanism 98 including an electric motor whose operation is controlled by the control unit 130, a ball screw, and the like via a holding member (not shown) that holds the nozzle 94. ing. The blocking plate lifting mechanism 98 moves the nozzle 94 up and down together with the blocking plate 90 and the rotating portion 93. The blocking plate lifting mechanism 98 includes a proximity position (see FIG. 7) in which the lower surface 91 of the blocking plate 90 is close to the upper surface of the substrate W held by the spin chuck 2, and a retracted position (see FIG. 7) provided above the proximity position. 1, see FIG. 5, FIG. 6, etc.), the shielding plate 90, the rotating part 93, and the nozzle 94 are moved up and down. The shield plate lifting mechanism 98 can hold the shield plate 90 at each position between the proximity position and the retracted position. Specifically, the retracted position of the shielding plate 90 is a height position where the height from the upper surface of the substrate W to the lower surface 91 of the shielding plate 90 is, for example, 150 mm. The proximity position is a height position at which the height is 3 mm, for example.

<2. Operation of Substrate Processing Apparatus 1>
FIG. 2 is a flowchart showing an example of the operation of the substrate processing apparatus 1. 3 and 4 are flowcharts showing examples of operations in the intermediate (final) rinse process and the SC1 process of FIG. 5, FIG. 6, FIG. 7, FIG. 8, FIG. 9 are schematic side views for explaining the charge removal process, SPM process, intermediate rinse process and SC1 process, organic solvent replacement process, and spin dry, respectively, of FIG. . 5 to 9, some of the components of the substrate processing apparatus 1 described in FIG. 1 are not shown.

  Hereinafter, an example of the operation of the substrate processing apparatus 1 will be described based on the flowcharts of FIGS. 2 to 4 with reference to FIGS. 5 to 9 as appropriate.

  Here, the blocking plate 90, the nozzle 44 of the removal liquid supply unit 4, and the nozzle 54 of the chemical liquid supply unit 5 are arranged in advance at their respective retraction positions. Further, the inner member 312 and the outer member 313 of the splash guard 31 are disposed at the lower position P3. Then, the substrate W is carried into the substrate processing apparatus 1 and is held by the spin chuck 2. In addition, the substrate W is previously subjected to impurity implantation and activation processing through a process such as exposure, development, and etching after a resist is applied to the upper surface, which is a device surface. On the upper surface of the substrate W, a resist pattern remains on the fine pattern of the etched conductor, and the substrate W is next subjected to a resist stripping process (resist removing process). Shall.

<Static removal treatment>
The substrate processing apparatus 1 first performs a charge removal process on the substrate W (step S10 in FIG. 2). The rotation mechanism 231 starts rotating the spin base 21 at a predetermined rotation speed. In this state, the control unit 130 opens the on-off valve 29 in order to supply the CO ₂ water for charge removal processing to the lower surface of the substrate W. Thus, as shown in FIG. 5, CO ₂ water supply source 28 is CO ₂ water supply is supplied to the lower surface nozzle 50 from the pipe 27a through the supply tube 27, the lower surface nozzle 50, the lower surface of the substrate W CO ₂ water is discharged so as to land on the central portion. The CO ₂ water spreads from the central portion of the lower surface to the peripheral portion along the lower surface of the substrate W by the centrifugal force generated by the rotation of the substrate W, and is discharged from the peripheral edge to the outside of the substrate W.

Here, in order to prevent the CO ₂ water discharged from the substrate W from splashing on the splash guard 31 and scattering on the upper surface of the substrate W, the members 312 and 313 are arranged in advance at the lower position P3. Accordingly, the CO ₂ water discharged from the substrate W hits each member 312, 313 and does not bounce off the upper surface of the substrate W, but is discharged to the floor surface of the chamber 11, and passes through a discharge pipe (not shown) to a recovery tank or the like. Collected. When the predetermined processing time has elapsed, the control unit 130 closes the on-off valve 29, stops the discharge of CO ₂ water by the lower surface nozzle 50, and ends the charge removal process. In addition, each member 312,313 in the static elimination process may be located not in the lower position P3 but in the upper position P1.

<SPM processing>
When the charge removal process is completed, the substrate processing apparatus 1 performs an SPM process (resist stripping process) for stripping the resist film by supplying SPM to the upper surface of the substrate W (step S20 in FIG. 2). Prior to the supply of SPM, as shown in FIG. 6, the nozzle moving mechanism 47 moves the nozzle 44 of the removal liquid supply unit 4 from the retracted position to the processing position above the substrate W, and the guard driving mechanism 37 The members 312 and 313 of the splash guard 31 are moved to their upper positions P1. The rotation mechanism 231 rotates the spin base 21 at a low rotation speed (“second rotation speed”) of, for example, about 10 rotations / minute. Further, as described above, the pipes 33 and 34 branch from the pipe 32 connected to the bottom member 311 of the splash guard 31, and the on-off valves 35 and 36 are provided in the pipes 33 and 34. The control unit 130 opens the on-off valve 35 among the on-off valves 35, 36 and closes the on-off valve 36. As a result, the SPM discharged from the substrate W is received by the bottom member 311 and is collected in a tank or the like connected to the pipe 33 via the pipes 32 and 33.

In this state, when the control unit 130 opens the on-off valve 43 of the removal liquid supply unit 4, high temperature SPM is supplied to the nozzle 44 from the removal liquid supply source 41 through the pipe 42. The nozzle 44 discharges SPM from the discharge port 44a to the central portion of the upper surface of the substrate W. The nozzle moving mechanism 47 moves (scans) the nozzle 44 between the upper position of the central portion of the substrate W and the upper position of the peripheral edge of the substrate W. The SPM discharged onto the upper surface of the substrate W spreads from the liquid landing position to the upper peripheral edge along the upper surface due to the centrifugal force generated by the rotation of the substrate W, and is discharged from the peripheral edge of the substrate W to the outside of the substrate W. Since the substrate W rotates at a low speed, most of the discharged SPM does not scatter from the substrate W and flows downward from the periphery of the substrate W. As a result, the SPM passes through the chuck pins 25 and the side surfaces of the spin base 21 in this order, and then drops toward the bottom member 311 along the outer peripheral surface of the casing 24 (more specifically, the bowl-shaped member 241). SPM is collected from the bottom member 311 to a tank or the like connected to the pipe 33 via the pipes 32 and 33. Further, the resist film formed on the upper surface of the substrate W is peeled (removed) by the high-temperature SPM, and is discharged from the substrate W together with the SPM and collected through the pipes 32 and 33. In this way, the SPM is separated from the CO ₂ water and the drainage destination.

  When high temperature SPM is supplied to the surface of the substrate W, it reacts with the resist to generate fume. Since fumes are gas or mist derived from SPM and resist, they are likely to diffuse into the chamber 11. If fume adheres to the shielding plate 90 or the like, it causes particles that contaminate the substrate W. In the substrate processing apparatus 1, the fumes generated from the upper surface of the substrate W move downward in the inner space of the inner member 312 due to the downward flow generated by the FFU 12 and the negative pressure generated by the exhaust equipment connected to the exhaust duct 14. After flowing inward, the air flows between the inner peripheral wall portion of the inner member 312 and the outer wall portion of the bottom member 311, and is exhausted from the exhaust port 13 through the exhaust duct 14 to the exhaust facility. Note that an exhaust duct (not shown) may be communicated with the outer member 313, and the inner member 312 may be positioned at the lower position P3 and the outer member 313 may be positioned at the upper position (P1) during the SPM process (S20).

  When a predetermined processing time elapses, the control unit 130 closes the on-off valve 43 to stop the supply of SPM from the removal liquid supply source 41 to the nozzle 44, and the guard drive mechanism 37 moves each member 312, 313 to the next The intermediate rinsing process (S30) is moved to the midway position P2, the nozzle moving mechanism 47 moves the nozzle 44 to the retracted position, and the SPM process ends. In this embodiment, the nozzle 44 that supplies the SPM discharges SPM while moving between the central portion and the peripheral portion of the upper surface of the substrate W, but the nozzle 44 is not moved. SPM may be discharged to the center of the upper surface of the substrate W. In this case, the nozzle 44 may be attached to the surface protection part 9, for example.

<Intermediate rinse treatment>
When the SPM process is completed, the substrate processing apparatus 1 supplies an rinsing liquid to the upper surface of the substrate W, and performs an intermediate rinse process for washing away the SPM adhering to the substrate W (step S30 in FIG. 2). In the intermediate rinsing process, after the SPM process (S20), removal of reaction products or residues present on the upper surface of the substrate W is also performed. Such a reaction product or residue is generated by, for example, SPM treatment (S20).

  FIG. 7 shows two schematic side views of the substrate processing apparatus 1, and the upper schematic side view corresponds to the intermediate rinsing process in step S30. Prior to the supply of the rinsing liquid, the guard driving mechanism 37 moves the members 312 and 313 of the splash guard 31 to their intermediate positions P2. The nozzle moving mechanism 47 moves the nozzle 44 of the removal liquid supply unit 4 from the processing position above the substrate W to a retreat position outside the drawing. Further, the shield plate lifting mechanism 98 lowers the surface protection unit 9 and moves the shield plate 90 from the retracted position to a close position close to the substrate W. Accordingly, the discharge port 64a of the nozzle 64 attached to the inner member 312 rotates with respect to the rotation locus of the chuck pin 25 along the side of the chuck pin 25 (more precisely, along the horizontal plane passing through the chuck pin 25). It is arranged so as to face the rotation locus of the chuck pin 25 at a position opposite to the axis a1). The height position of the discharge port 64 a is above the upper surface of the spin base 21 and below the lower surface of the substrate W. Further, the inner peripheral edges of the upper portions of the inner member 312 and the outer member 313 are opposed to the side surfaces 92 of the blocking plate 90, respectively.

  The rotation mechanism 231 sets the rotation speed of the spin base 21 to a predetermined rotation speed (for example, 250 rotations / minute) faster than the rotation speed in the SPM process, and rotates the spin base 21 at the rotation speed (FIG. 3). Step S110). Further, the control unit 130 closes the on-off valve 35 among the on-off valves 35, 36 of the pipes 33, 34 and opens the on-off valve 36. Thus, the rinse liquid discharged from the substrate W and the cleaning liquid supplied by the cleaning liquid supply unit 6 are received by the bottom member 311 and can be collected in a tank or the like connected to the pipe 34 via the pipes 32 and 34.

  In this state, when the control unit 130 opens the on-off valve 73 of the rinse liquid supply unit 7, the rinse liquid is supplied from the rinse liquid supply source 71 to the nozzle 94 via the pipe 72. Thereby, the nozzle 94 starts discharge of the rinse liquid to the center part of the upper surface (main surface) of the substrate W (step S120 in FIG. 3). The rinsing liquid that has landed on the center of the upper surface of the substrate W spreads from the landing position to the peripheral edge of the upper surface along the upper surface by the centrifugal force generated by the rotation of the substrate W. With this rinse liquid, SPM and the like remaining on the upper surface of the substrate W are washed out of the substrate W.

  In addition, the control unit 130 opens the flow control valve 63 so that a large amount (for example, 1700 ml / m) of the cleaning liquid flows through the pipe 62 provided in the cleaning liquid supply mechanism 66 of the cleaning liquid supply unit 6, and the opening degree thereof is increased. Set. Accordingly, the nozzle 64 starts cleaning of the chuck pin 25 by discharging the cleaning liquid supplied from the cleaning liquid supply source 61 at a high speed (large flow rate, first flow rate) (step S130 in FIG. 3). The large flow rate is such that the cleaning liquid enters the space between the upper surface of the spin base 21 and the lower surface of the substrate W from the discharge port 64a, and the space is linearly formed along the upper surface of the spin base 21 (the lower surface of the substrate W). The flow rate is discharged at a high discharge speed that can be advanced. More specifically, the high discharge speed is such that the cleaning liquid discharged from the discharge port 64a maintains a linear shape, and the space between the spin base 21 and the substrate W extends along the upper surface of the spin base 21. This is the speed at which the outer peripheral surface of the rotating chuck pin 25 can reach the rotating shaft facing surface facing the rotating shaft a1. FIG. 10 is a conceptual side view of the spin base 21 at step S130. As shown in FIG. 10, the cleaning liquid L ejected from the nozzle 64 flies linearly at a speed that reaches the inner member 312 facing the nozzle 64 with the rotation axis a <b> 1 of the spin base 21. In addition, illustration of the lower surface nozzle 50 is abbreviate | omitted in FIG.

  FIG. 11 is a conceptual top view of the spin base 21 at step S130. As shown in FIG. 11, the discharge direction in a plan view of the linear cleaning liquid L discharged from the nozzle 64 is set so that the cleaning liquid can reach the rotation axis facing surface of the chuck pin 25 while avoiding the lower surface nozzle 50. Yes. That is, the linear cleaning liquid L discharged from the nozzle 64 flies along a locus that does not interfere with the lower surface nozzle 50 and is located on the opposite side of the nozzle 64 with the rotation axis a1 of the spin base 21 in plan view. The 25 side is reached and cleaned.

  As described above, the linear flow of the cleaning liquid supplied to the nozzle 64 at a high flow rate and discharged from the nozzle 64 at a high speed intersects with the rotation locus of the chuck pin 25 at two locations near and far from the nozzle 64. can do. When the liquid flow of the cleaning liquid hits the chuck pin 25 at a position closer to the nozzle 64 among the two positions, the cleaning liquid is a surface on the opposite side of the rotation axis a1 (rotation shaft) of the outer peripheral surface of the chuck pin 25. the surface not facing a1). When the liquid flow of the cleaning liquid hits the chuck pin 25 on the side far from the nozzle among the two places, the cleaning liquid hits the rotating shaft facing surface of the outer peripheral surface of the chuck pin 25 as described above.

  As described above, the control unit 130 performs the cleaning liquid so that the nozzle 64 performs the cleaning operation (“first cleaning operation”, “first cleaning process”) in which the cleaning liquid is applied to the chuck pin 25 to clean the chuck pin 25. Control ("first control") is performed to supply the supply mechanism 66 with a large amount of cleaning liquid.

  The rinsing liquid supplied from the rinsing liquid supply unit 7 to the substrate W is scattered from the peripheral edge of the substrate W toward the inner member 312 because the substrate W is rotated at a relatively high speed. Further, when the cleaning liquid supplied by the cleaning liquid supply unit 6 also hits the surface of the chuck pin 25 opposite to the rotation axis a1, the cleaning liquid splashes violently because of the high speed. However, since the shielding plate 90 is disposed in the vicinity thereof, and the inner peripheral edges of the upper portions of the inner member 312 and the outer member 313 are opposed to the side surfaces 92 of the shielding plate 90, respectively, the rinse liquid and the cleaning liquid are Further, scattering from the inner space of the inner member 312 to the outer side of the splash guard 31 can be suppressed.

  Next, the control unit 130 waits for a predetermined processing time required for the rinsing process (step S140 in FIG. 3), and then closes the on-off valve 73 of the rinsing liquid supply unit 7 to rinse the rinsing liquid from the nozzle 94. 3 is stopped (step S150 in FIG. 3), the flow rate control valve 63 of the cleaning liquid supply unit 6 is closed, and the discharge of the cleaning liquid from the nozzle 64 is stopped (step S160 in FIG. 3). Thereby, the intermediate rinse process is completed. In the process of step S160, the control unit 130 may cause the cleaning liquid to be discharged from the nozzle 64 at a small flow rate, which will be described later, instead of stopping the discharge of the cleaning liquid. Further, in this embodiment, the rinsing process and the first cleaning process are performed in parallel, but one of these processes may be performed first, and then the other process may be performed. .

<SC1 processing>
When the intermediate rinsing process is completed, the substrate processing apparatus 1 supplies SC1 as a chemical solution to the upper surface of the substrate W, and after the SPM process (S20), reaction products or residues present on the upper surface of the substrate W, particles, SC1 processing (“particle removal processing”) is performed (step S40 in FIG. 2).

  Of the two schematic side views described in FIG. 7, the lower schematic side view corresponds to the SC1 process in step S40. Prior to supply of SC1, the shield plate lifting mechanism 98 moves the surface protection unit 9 so that the shield plate 90 is disposed at the retracted position. The nozzle moving mechanism 57 moves the nozzle 54 of the chemical solution supply unit 5 from the retracted position to a processing position above the substrate W.

  The rotation mechanism 231 sets the rotation speed of the spin base 21 to, for example, a predetermined rotation speed (for example, 500 rotations / minute) that is faster than the rotation speed in the intermediate rinsing process. The spin base 21 is rotated at the “speed”) (step S210 in FIG. 4).

  In this state, when the control unit 130 opens the on-off valve 53 of the chemical solution supply unit 5, SC1 is supplied from the SC1 supply source 51 through the pipe 52 to the nozzle 54. As a result, the nozzle 54 starts discharging SC1 to the central portion of the upper surface (main surface) of the substrate W (step S220 in FIG. 4). The nozzle moving mechanism 57 reciprocates (scans) the nozzle 54 between the center upper position of the substrate W and the upper position of the peripheral edge of the substrate W. SC1 that hits the center of the upper surface of the substrate W spreads from the liquid landing position to the peripheral edge of the upper surface along the upper surface by the centrifugal force generated by the rotation of the substrate W. By this SC1, the resist residue and particles adhering to the substrate W are removed.

  Further, the control unit 130 opens the flow control valve 63 so that a small flow rate (for example, 400 to 500 ml / m) of the cleaning liquid flows through the pipe 62 provided in the cleaning liquid supply mechanism 66 of the cleaning liquid supply unit 6. Set the degree. Thereby, the nozzle 64 discharges the cleaning liquid supplied from the cleaning liquid supply source 61 at a low speed (small flow rate) and starts cleaning the spin base 21 and the casing 24 (step S230 in FIG. 4). The flow rate of the cleaning liquid at this time is a lower flow rate (second flow rate) than the flow rate in step S130.

  This small flow rate allows the cleaning liquid discharged from the discharge port 64a to travel along an arcuate path approaching the side surface of the spin base 21 while turning downward while turning toward the rotation axis a1, and the cleaning liquid is at a low discharge speed. This is the flow rate to be discharged. In other words, the control unit 130 discharges the cleaning liquid from the discharge port 64a at a low speed that allows the cleaning liquid to travel along the arc-shaped path approaching the side surface of the spin base 21 while turning downward from the discharge port 64a toward the rotation axis a1. As described above, the cleaning liquid supply mechanism 66 of the cleaning liquid supply unit 6 is supplied with a small flow rate of the cleaning liquid.

  As described above, the controller 130 causes the nozzle 64 to perform a cleaning operation (“second cleaning operation”, “second cleaning process”) in which the cleaning liquid is applied to the side surface of the spin base 21 to clean the spin base 21. Then, a control (“second control”) is performed to supply the cleaning liquid supply mechanism 66 with a small flow rate of the cleaning liquid. Further, the chemical solution supply unit 5 supplies the chemical solution to the upper surface of the substrate W in parallel with the second cleaning operation by the nozzle 64.

  SC1 supplied to the substrate W from the chemical solution supply unit 5 is scattered from the periphery of the substrate W toward the inner member 312 because the substrate W is rotated at a higher speed than in the SPM process (S20). Hardly flows down. The SC 1 scattered from the peripheral edge of the substrate W flows downward along the inner peripheral surface of the inner member 312 and flows to the bottom member 311.

  Further, the cleaning liquid supplied by the cleaning liquid supply unit 6 is low speed and strikes the side surface of the spin base 21 obliquely downward. For this reason, after hitting the side surface of the spin base 21, the liquid flows downward along the side surface without splashing much from the side surface, and further flows to the bottom member 311 along the outer peripheral surface of the casing 24.

  The SC1 and the cleaning liquid that have flowed into the bottom member 311 are recovered from the bottom member 311 to a tank or the like connected to the pipe 34 via the pipes 32 and 34. The SC1 (chemical solution) and the cleaning solution are examples of combinations of liquids that are safe to mix and that do not generate reaction products. Other combinations include hydrofluoric acid and water, IPM and water, and the like.

  Next, the control unit 130 waits for a predetermined processing time required for the rinsing process (step S240 in FIG. 4), and then closes the on-off valve 53 of the chemical solution supply unit 5 and discharges SC1 from the nozzle 54. (Step S250 in FIG. 4), the flow rate control valve 63 of the cleaning liquid supply unit 6 is closed, and the discharge of the cleaning liquid from the nozzle 64 is stopped (Step S260 in FIG. 4). As a result, the SC1 process ends. In this embodiment, the SC1 process and the second cleaning process are performed in parallel, but one of these processes may be performed first, and then the other process may be performed. Further, in this embodiment, the nozzle 54 that supplies SC1 discharges SC1 while moving between the central portion and the peripheral portion of the upper surface of the substrate W, but the nozzle 54 is moved. The SC1 may be discharged to the center of the upper surface of the substrate W without any problem. In this case, the nozzle 54 may be attached to the surface protection part 9, for example.

  As described above, in both the intermediate rinsing process and the SC1 process, the inner member 312 and the outer member 313 are arranged at the midway position P2. In the first cleaning process and the second cleaning process, the height of the inner member 312 may be slightly changed. That is, the height of the inner member 312 when the nozzle 64 performs the first cleaning operation and the height of the inner member 312 when the nozzle 64 performs the second cleaning operation are preferably set to be approximately equal.

<Final rinse>
When the SC1 process is completed, the substrate processing apparatus 1 supplies a rinsing liquid to the upper surface of the substrate W, and performs a final rinse process for washing away the SC1 adhering to the substrate W (step S50 in FIG. 2).

  Since the final rinse process is the same as the above-described intermediate rinse process, detailed description thereof is omitted. In the two schematic side views of FIG. 7, the upper schematic side view corresponds not only to the intermediate rinsing process in step S30 but also to the final rinsing process in step S50. The flowchart of FIG. 3 also describes the operation of the final rinse process as well as the intermediate rinse process.

<Organic solvent replacement treatment>
When the final rinsing process is completed, the substrate processing apparatus 1 supplies an organic solvent to the upper surface of the substrate W, and performs a process of replacing the rinsing liquid remaining on the upper surface with the organic solvent (organic solvent replacement process) (FIG. 2 step S60). In this embodiment, the substrate processing apparatus 1 supplies IPA as an organic solvent from the organic solvent supply unit 8.

  Prior to the supply of IPA, the nozzle moving mechanism 57 moves the nozzle 54 of the chemical solution supplying unit 5 from the upper side of the substrate W to the retracted position, and the blocking plate lifting mechanism 98 lowers the surface protection unit 9 to thereby block the blocking plate. 90 is moved from the retracted position to the close position. The guard driving mechanism 37 moves the inner member 312 of the splash guard 31 from the midway position P2 to the lower position P3. The external material 313 is not moved and is held at the midway position P2. The rotation mechanism 231 rotates the spin base 21 at a predetermined rotation speed (for example, 500 rotations / minute).

  In this state, when the control unit 130 opens the on-off valve 83 of the organic solvent supply unit 8, IPA is supplied from the organic solvent supply source 81 to the nozzle 94 via the pipe 82. Accordingly, the nozzle 94 starts discharging IPA to the central portion of the upper surface (main surface) of the substrate W. The IPA hitting the center of the upper surface of the substrate W spreads from the liquid landing position to the peripheral edge of the upper surface along the upper surface by the centrifugal force generated by the rotation of the substrate W. By this IPA, the rinsing liquid remaining on the upper surface of the substrate W is caused to flow outside the substrate W and is replaced with IPA.

  The IPA supplied from the organic solvent supply unit 8 to the substrate W is scattered from the peripheral edge of the substrate W toward the outer member 313. The IPA that has reached the outer member 313 flows down along the inner peripheral surface of the outer member 313, and is formed by an annular liquid receiving member (not shown) provided below the outer member 313 so as to surround the spin chuck 2. The liquid is received and discharged to the outside of the substrate processing apparatus 1 through a drainage groove communicating with the bottom of the liquid receiving member.

  The control unit 130 waits for a predetermined processing time required for the organic solvent replacement processing, and then closes the on-off valve 83 of the organic solvent supply unit 8 to stop the discharge of IPA from the nozzle 94. Thereby, the organic solvent replacement process is completed. Even if the organic solvent replacement treatment is not performed, the usefulness of the present invention is not impaired.

<Spin Dry>
When the organic solvent replacement process is completed, the substrate processing apparatus 1 performs a spin dry process in which the IPA (organic solvent) remaining on the upper surface of the substrate W is spun off to the outside of the substrate W by the rotation of the substrate W to dry the substrate W. This is performed (step S70 in FIG. 2).

  The height positions of the blocking plate 90 and the splash guard 31 are maintained at the position of the organic solvent replacement process. That is, the blocking plate 90 is fastened in the proximity position, and the inner member 312 and the outer member 313 are fastened at the lower position P3 and the midway position P2, respectively.

  The rotation mechanism 231 rotates the spin base 21 at a predetermined high speed (for example, 1500 rotations / minute). As a result, the IPA remaining on the upper surface of the substrate W moves to the periphery of the substrate W due to the centrifugal force generated by the rotation of the substrate W, scatters from the periphery toward the outer member 313, and the substrate W is dried. The IPA that has reached the external member 313 flows down along the inner peripheral surface of the outer member 313, is received by an annular liquid receiving member provided below the outer member 313, and communicates with the bottom of the liquid receiving member. It is discharged to the outside of the substrate processing apparatus 1 through the drainage groove.

  The control unit 130 waits for a predetermined processing time required for spin dry to elapse, and causes the rotation mechanism 231 to stop the rotation of the spin base 21. Thereby, the spin drying of the substrate W is completed.

  According to the substrate processing apparatus according to the present embodiment configured as described above, the control unit 130 causes the nozzle 64 to perform the first cleaning operation of cleaning the chuck pin 25 by applying the cleaning liquid to the chuck pin 25. In the cleaning liquid supply mechanism 66, the nozzle 64 performs a first control for supplying the cleaning liquid supply mechanism 66 with a large flow rate of cleaning liquid and a second cleaning operation in which the cleaning liquid is applied to the side surface of the spin base 21 to clean the spin base 21. And a second control for supplying a small amount of cleaning liquid. Accordingly, the nozzle 64 supplies the cleaning liquid at a high speed in the first operation for cleaning the chuck pin 25 and supplies the cleaning liquid at a low speed in the second operation for cleaning the spin base 21. Accordingly, the cleaning liquid supplied in the first operation proceeds along a straight path without being affected by the gravitational force, and the cleaning liquid supplied in the second operation is strongly influenced by the gravitational force and is arcuate. Proceed while turning downward along the route. As a result, both the chuck pin 25 and the spin base 21 positioned below the chuck pin 25 can be cleaned with the common nozzle 64, and the cleaning liquid is low when cleaning the spin base 21. Further, the splashing of the cleaning liquid from the spin base 21 can be suppressed.

  Further, according to the substrate processing apparatus according to the present embodiment, the nozzle 64 is attached to the inner member 312, so that a separate member for attaching the nozzle 64 is not necessary.

  Further, according to the substrate processing apparatus according to the present embodiment, the chemical solution supply unit 5 supplies the chemical solution to the upper surface of the substrate W in parallel with the second cleaning operation by the nozzle 64. Therefore, the processing time of the substrate W can be shortened.

  Moreover, according to the substrate processing apparatus which concerns on this embodiment, it is safe even if it mixes a chemical | medical solution and a washing | cleaning liquid, and is the combination of the liquid which does not produce | generate a reaction product. Accordingly, since the chemical liquid and the cleaning liquid can be discharged through the same discharge path, the structure of the discharge path can be simplified and the discharged liquid can be easily handled.

  In addition, according to the substrate processing apparatus of the present embodiment, the removal liquid supply unit supplies SPM to the upper surface of the substrate W immediately before the first cleaning operation. Accordingly, since the cleaning liquid can be supplied to the chuck pin 25 immediately after the SPM is discharged from the substrate W and attached to the chuck pin 25, the SPM attached to the chuck pin 25 can be efficiently removed.

  Further, according to the substrate processing apparatus according to the present embodiment, the nozzle 64 is attached to the inner member 312, the height of the inner member 312 when the nozzle 64 performs the first cleaning operation, and the nozzle 64 is the second. The height of the inner member 312 when performing the cleaning operation is substantially equal. Therefore, the height of the nozzle 64 in the first cleaning operation and the second cleaning operation can be easily made substantially equal.

  Further, according to the substrate processing apparatus of the present embodiment, the first cleaning process (S130) is executed in parallel with the intermediate rinse process (S30), and the second cleaning process (S230) in parallel with the SC1 process (S40). ) Was executed. The rotation speeds of the spin base 21 when executing the intermediate rinse process (S30) and the SC1 process (S40) are 250 rpm and 500 rpm, respectively, and are significantly higher than the rotation speed of the spin base 21 when executing the SPM process (S20). Thus, in the present embodiment, the first and second cleaning processes (S130) and (S230) are performed while rotating the spin base 21 at a relatively high speed. As a result, the cleaning liquid can collide with the chuck pins 25 and the spin base 21 at a relatively high speed. Therefore, the first and second cleaning processes S130 and S230 can be executed with high cleaning efficiency.

  Further, as described above, since the intermediate rinsing process (S30) and the SC1 process (S40) are performed while rotating the spin base 21 at a relatively high speed, most of the processing liquid is scattered from the substrate W, Only zero or a small amount of processing liquid falls downward. Since the first and second cleaning processes (S130) and (S230) can be executed in such a manner that there is almost no liquid drop from the processing liquid from above, the chuck pin 25 and the spin base 21 are efficiently cleaned. Is possible.

  Further, according to the substrate processing apparatus according to the present embodiment, when the first cleaning operation is performed, the inner peripheral edge of the upper portion of the inner member 312 faces the side surface of the blocking plate, so that the cleaning liquid bounced off by the chuck pin 25 is Diffusion outside the inner member 312 can be suppressed.

  In the present embodiment, the first cleaning process (S130) is executed in parallel with the intermediate rinse process (S30), and the second cleaning process (S230) is executed in parallel with the SC1 process (S40). However, the first and second cleaning processes (S130) and (S230) may be sequentially performed in parallel with the intermediate rinse process (S30). After the second cleaning process (S230), the first cleaning process (S130) may be executed in parallel with the intermediate rinse process (S30). Alternatively, the first and second cleaning processes (S130) and (S230) may be sequentially performed in parallel with the SC1 process (S40). After the second cleaning process (S230), the first cleaning process (S130) may be executed in parallel with the SC1 process (S40).

  In the present embodiment, the first and second cleaning processes (S130) and (S230) are performed after supplying SPM, which is one of the removal liquids (SPM process (S20)). However, the first and second cleaning processes (S130) and (S230) may be performed after another processing liquid (for example, an organic solvent, a rinsing liquid, etc.) is supplied to the substrate W.

  Further, in this embodiment, the first and second cleaning processes (S130) and (S230) are performed in parallel with the supply of the processing liquid to the upper surface of the substrate W. However, the processing liquid is supplied to the upper surface of the substrate W. The first and second cleaning processes (S130) and (S230) may be performed in a state in which they are not.

  In the present embodiment, the first and second cleaning processes (S130) and (S230) are performed in a state where the substrate W is held on the spin base 21, but the substrate W is not held on the spin base 21. The first and second cleaning processes (S130) and (S230) may be performed.

  Although the invention has been shown and described in detail, the above description is illustrative in all aspects and not restrictive. Therefore, embodiments of the present invention can be modified or omitted as appropriate within the scope of the invention.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 130 Control part 2 Spin chuck 21 Spin base 231 Rotation mechanism 24 Casing 25 Chuck pin (holding pin)
3 Splash prevention part 31 Splash guard 312 Inner member (guard)
4 Removal liquid supply part (second treatment liquid supply part)
5 Chemical solution supply unit (first treatment solution supply unit)
6 Cleaning liquid supply part 64 Nozzle 66 Cleaning liquid supply mechanism 7 Rinse liquid supply part 8 Organic solvent supply part 9 Surface protection part 90 Blocking plate P1 Upper position P2 Intermediate position P3 Lower position W Substrate a1 Rotating shaft c1 Center

Claims (11)

A spin base having a horizontal upper surface and rotatable about a vertical rotation axis;
A holding pin which is erected on the spin base and holds a peripheral edge of the substrate spaced from the upper surface of the spin base;
A rotation mechanism for rotating the spin base;
A guard surrounding the spin base opposite to the periphery of the spin base;
A cleaning liquid supply mechanism for supplying the cleaning liquid at a variable flow rate;
A nozzle provided at least partially inside the guard and capable of discharging the cleaning liquid supplied by the cleaning liquid supply mechanism;
A controller for controlling the supply of the cleaning liquid by the cleaning liquid supply mechanism;
With
The controller is
A first control that causes the cleaning liquid supply mechanism to supply the cleaning liquid at a first flow rate so that the nozzle performs a first cleaning operation in which the cleaning liquid is applied to the holding pins to clean the holding pins; A second control for supplying the cleaning liquid with a second flow rate smaller than the first flow rate to the cleaning liquid supply mechanism so that the nozzle performs a second cleaning operation for cleaning the spin base against a side surface of the spin base; A substrate processing apparatus. The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the nozzle is attached to the guard. The substrate processing apparatus according to claim 1 or 2, wherein
A first processing liquid supply unit configured to supply a first processing liquid to the upper surface of the substrate;
The substrate processing apparatus, wherein the control unit controls the cleaning liquid supply mechanism to perform the first cleaning operation or the second cleaning operation in parallel with the supply of the first processing liquid. The substrate processing apparatus according to claim 3, wherein
A second processing liquid supply unit that supplies a second processing liquid that is a removing liquid for removing the film formed on the upper surface of the substrate by etching or peeling;
The first processing liquid is a processing liquid supplied to the upper surface of the substrate for the purpose of removing reaction products or residues present on the upper surface of the substrate from the upper surface of the substrate after supplying the second processing liquid. There is a substrate processing apparatus. The substrate processing apparatus according to claim 4,
The control unit can control the rotation of the spin base by the rotation mechanism,
The control unit rotates the spin base at a first rotation speed when the first processing liquid is supplied to the upper surface of the substrate by the first processing liquid supply unit, and the second processing liquid supply unit The substrate processing apparatus, wherein the substrate is rotated at a second rotational speed lower than the first rotational speed when the second processing liquid is supplied to the upper surface of the substrate. A substrate processing apparatus according to any one of claims 3 to 5,
The substrate processing apparatus, wherein the first processing liquid and the cleaning liquid are a combination of liquids that are safe to mix and that do not generate a reaction product. A substrate processing apparatus according to any one of claims 2 to 6,
A base surface for supporting the rotation mechanism from below;
The height from the base surface of the guard when the nozzle performs the first cleaning operation and the height from the base surface of the guard when the nozzle performs the second cleaning operation are substantially equal. Substrate processing equipment. A substrate processing apparatus according to any one of claims 1 to 7,
A plate-shaped blocking plate including a main surface that is opposed to the upper surface of the substrate held by the holding pin with a gap;
The upper part of the guard extends toward the rotating shaft,
The substrate processing apparatus, wherein an inner peripheral edge of an upper portion of the guard is opposed to a side surface of the shielding plate when performing the first cleaning operation. A substrate processing apparatus according to any one of claims 1 to 8, wherein
The substrate processing apparatus, wherein the first flow rate is set to a flow rate at which the cleaning liquid discharged from the nozzle can be directly applied to a holding pin located on the opposite side of the nozzle across the rotation axis in plan view. The substrate processing apparatus according to claim 9, comprising:
A lower surface nozzle for supplying a processing liquid toward the lower surface of the substrate held by the holding pins is provided on the upper surface of the spin base, and the cleaning liquid discharged from the nozzle in the first cleaning operation is the lower surface A substrate processing apparatus that flies in a locus that does not interfere with a nozzle and directly contacts a holding pin located on the opposite side of the nozzle across the rotation axis in plan view. A substrate processing method by a substrate processing apparatus,
The substrate processing apparatus includes:
A spin base having a horizontal upper surface and rotatable about a vertical rotation axis;
A holding pin which is erected on the spin base and holds a peripheral edge of the substrate spaced from the upper surface of the spin base;
A rotation mechanism for rotating the spin base;
A guard surrounding the spin base opposite to the periphery of the spin base;
A nozzle provided at least partially inside the guard and capable of discharging a predetermined cleaning liquid;
With
The substrate processing method is as follows:
A first step of supplying a first flow rate of the cleaning liquid to the nozzle so that the nozzle performs a first cleaning operation in which the cleaning liquid is applied to the holding pin to clean the holding pin;
A second supply of the cleaning liquid having a second flow rate lower than the first flow rate to the nozzle is performed so that the nozzle performs a second cleaning operation in which the cleaning liquid is applied to a side surface of the spin base to clean the spin base. Process,
A substrate processing method.

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