JP2018157023A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

Disclosed is a semiconductor device including a bonding portion to which a wire is bonded, and the bonding portion is sealed with a mold resin, and the disconnection of the wire is suppressed without covering the bonding portion with a film other than the mold resin. A semiconductor device and a manufacturing method thereof are realized. A lead frame having a lead portion, a wire, a part of the lead portion including a joint portion joined to the wire, and a mold resin for sealing the wire, And a roughened region 1011 having micro-order irregularities formed in a region surrounding the joint portion while being separated from the joint portion in the lead portion. The manufacturing method of the semiconductor device includes forming a roughened region 1011 on the lead portion 101 by laser irradiation before bonding the wire 13 to the lead portion 101. As a result, the bonding portion of the wire 13 is surrounded by a region having high adhesion to the mold resin 20, and a semiconductor device in which disconnection of the wire 13 due to stress is suppressed is obtained. [Selection] Figure 4

Description

  The present invention relates to a semiconductor device including a wire bonding portion to which wires are bonded and a method for manufacturing the same.

  2. Description of the Related Art Conventionally, there has been known a semiconductor device including a lead frame, a semiconductor chip mounted on the lead frame, a shunt resistor for measuring a current between electrodes, and a mold resin for sealing them. In such a configuration, the shunt resistor includes a resistor having a predetermined resistance value, is arranged so as to bridge between the two electrodes, and a total of two wires are provided at two locations across the resistor. It is connected. Then, the current value between the two electrodes is detected based on the resistance value of the resistor constituting the shunt resistor and the potential difference between both ends of the shunt resistor.

  In this type of semiconductor device, peeling of the mold resin and wire breakage due to this peeling may occur due to the generation of stress due to the difference in the linear expansion coefficient between the lead frame made of metal and the mold resin.

  As a semiconductor device that solves such a problem, for example, a semiconductor device described in Patent Document 1 can be cited. In addition to the above-described configuration, the semiconductor device described in Patent Document 1 is formed with a film made of a polyamide resin that covers a wire joint. As a result, even if stress is applied between the lead frame and the mold resin due to stress such as heat, especially the joint of the wire, the polyamide resin covering the joint absorbs the deformation caused by the stress, and the wire breakage occurs. The semiconductor device is suppressed.

JP 2006-351737 A

  However, in the semiconductor device described in Patent Literature 1, since a polyamide resin film is formed by applying a coating solution in which a polyamide resin is dissolved in an organic solvent to a bonding portion of a bonding wire, an increase in manufacturing process and use of a polyamide resin material are required. This increases the manufacturing cost.

  The present invention has been made in view of the above points, and even if a configuration including a shunt resistor or the like to which a wire is connected is provided, wire breakage due to stress is suppressed without coating with a polyamide resin. Another object of the present invention is to provide a semiconductor device and a method for manufacturing the same.

  In order to achieve the above object, a semiconductor device according to claim 1 includes a lead frame (10) having a plurality of lead portions (101) and a wire electrically connected to a part of the plurality of lead portions. (13) and a mold resin (20) for sealing a part of the wire and the lead portion including a joint portion joined to the wire. In such a configuration, the lead portion is a region that is sealed with the mold resin and is a region different from the joint portion, and has a micro-order unevenness in the region surrounding the joint portion while being separated from the joint portion. The formation region (1011) is formed.

  As a result, the joint portion of the lead frame where the wire is joined is surrounded by the roughened region, and the joint portion is sealed together with the roughened region by the mold resin, and the roughened region around the joint portion is adhered by the anchor effect. Thus, a semiconductor device having improved properties is obtained. Therefore, in the roughened region, the occurrence of peeling between the mold resin and the lead frame due to the stress caused by the stress such as heat is suppressed, and the wire caused by the stress is not coated with the polyamide resin or the like. Thus, an inexpensive semiconductor device in which disconnection is suppressed.

  The method of manufacturing a semiconductor device according to claim 7, wherein a lead frame (10) having a plurality of lead portions (101) is prepared, and a wire (13) is joined to a part of the plurality of lead portions. And forming a mold resin (20) that seals a portion of the wire and the lead portion including a joint portion joined to the wire. Then, before bonding the wire, a roughened region (1011) having micro-order unevenness is formed by laser irradiation in a region surrounding the portion while leaving the portion of the lead portion where the wire is bonded.

  As a result, the joint portion of the lead frame where the wire is joined is surrounded by the roughened region, and the joint portion is sealed together with the roughened region by the mold resin, and the adhesion around the joint portion is improved by the anchor effect. Thus, a semiconductor device that has been defined as a region can be manufactured. That is, by forming a roughened region surrounding the joint by laser irradiation and forming a mold resin that seals the joint and the roughened region, the mold resin and the lead frame can be separated from each other by stress around the joint. A suppressed semiconductor device can be manufactured. Therefore, a semiconductor device in which wire breakage due to stress is suppressed can be manufactured at low cost without coating the joint with a polyamide resin.

  In addition, the code | symbol in the bracket | parenthesis of each said means shows an example of a corresponding relationship with the specific means as described in embodiment mentioned later.

1 is a top layout view illustrating a semiconductor device according to a first embodiment; It is sectional drawing of the semiconductor device of 1st Embodiment between II-II in FIG. It is sectional drawing of the semiconductor device of 1st Embodiment between III-III in FIG. FIG. 3 is a top layout view showing a portion of the lead frame that is a roughened region in the semiconductor device of the first embodiment. FIG. 5 is an enlarged view showing a roughened region in a region near the first lead portion indicated by V in FIG. 4. It is an enlarged view shown about the roughening area | region in the partial area | region of shunt resistance which shows VI in FIG. It is a figure which shows about the wetting spread of the solder in the case where the roughening area | region is not formed in the surface of the solder joint side among shunt resistance, and the case where the roughening area | region is formed. It is a top surface layout view showing a semiconductor device of other embodiments. In other embodiment, it is a figure shown about the example of the roughening area | region surrounding the junction part of the 1st lead part to which the joining of the wire and the wire was joined. In other embodiment, it is a figure shown about the example of the 1st lead part in which the mark for bonding recognition was formed by laser irradiation.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other will be described with the same reference numerals.

(First embodiment)
The semiconductor device according to the first embodiment will be described with reference to FIGS. In FIG. 1, the upper surface layout which transparentized the mold resin 20 mentioned later is shown, and the outline of the mold resin 20 is shown with the dashed-dotted line. Further, in FIG. 1, it is simplified for easy understanding, and roughening regions 1011, 1012, 1021, 1022, 1031, 1032, 1041, and 16b described later are omitted. In FIG. 2, constituent elements in a cross section different from the cross section between II and II shown in FIG. 1 and 4 to 6 are not cross-sectional views, but are hatched for easy understanding of the configuration.

  As shown in FIG. 1, the semiconductor device of this embodiment includes a lead frame 10, electronic components 11 and 12 and a shunt resistor 16 mounted on the lead frame 10, wires 13 to 15, a mold resin 20, An electrical connection member 30.

  In such a configuration, as shown in FIG. 1, the lead frame 10 has a plurality of first lead portions 101, a second lead portion 102 on which the first electronic component 11 is mounted, and a second electronic component 12. The third lead portion 103 and the fourth lead portion 104 are provided. The plurality of first lead portions 101 are electrically connected to any one of the first electronic component 11, the second electronic component 12, or the shunt resistor 16 via any one of the wires 13 to 15. The third lead portion 103 is electrically connected to the first electronic component 11 mounted on the second lead portion 102 via the electrical connection member 30. The fourth lead portion 104 is connected to the shunt resistor 16, and the shunt resistor 16 is disposed by bridging the fourth lead portion 104 and the second electronic component 12 mounted on the third lead portion 103. The second electronic component 12 is electrically connected. The mold resin 20 covers a part of the lead frame 10, the electronic components 11 and 12, the wires 13 to 15, the shunt resistor 16, and the electrical connection member 30, and seals these members.

  As shown in FIG. 2, the semiconductor device according to the present embodiment has a structure in which, for example, a portion of the lead frame 10 excluding a portion outside the outer region of the mold resin 20 and other constituent members are all sealed with the mold resin 20. , So-called full mold structure.

  In the present embodiment, the semiconductor device has a full mold structure, but the surface of the lead frame 10 opposite to the surface on which the electronic components 11 and 12, the shunt resistor 16 and the like are mounted is exposed from the mold resin 20. The so-called half-molded semiconductor device may be used.

  The lead frame 10 is a base material made of a conductive material such as a metal material such as Cu, Fe or an alloy thereof. The lead frame 10 includes a first lead portion 101, a second lead portion 102, a third lead portion 103, and a fourth lead portion 104, for example, by punching a plate that becomes a conductive material by pressing or the like. It becomes. The lead frame 10 may be provided with a plating made of a noble metal or the like on the surface as necessary in order to improve the bonding property of wire bonding or improve the durability.

  In addition, although the lead frame 10 is comprised by the some lead part, about the number of lead parts etc., you may change suitably.

  Of the first lead portion 101, the second lead portion 102, the third lead portion 103, and the fourth lead portion 104, a rough area for improving the adhesion with the mold resin 20 described later is provided in a part of each region. The formation region is formed. Details of the roughened region will be described later in detail.

  The electronic components 11 and 12 are components that are driven by electricity such as semiconductor chips and capacitors that constitute, for example, IGBT (abbreviation of Insulated Gate Bipolar Transistor), MOSFET (abbreviation of Metal-Oxide-Semiconductor Field-Effect Transistor), and the like. In the present embodiment, the first electronic component 11 is a semiconductor chip including an IGBT as a power semiconductor module, and the second electronic component 12 is a semiconductor chip including a MOSFET as a switching element. As the electronic components 11 and 12, any semiconductor chip or the like is used and is manufactured by an arbitrary manufacturing process.

  As shown in FIG. 1 or FIG. 2, the first electronic component 11 is mounted on the second lead portion 102 via a conductive bonding material such as solder (not shown), and is electrically connected to the second lead portion 102. In addition, the first lead portion 101 is electrically connected through the first wire 13. The first electronic component 11 is electrically connected to the second lead portion 102 via an electrical connection member 30 made of a metal clip or metal foil made of Cu or the like, a wire made of a conductive material such as Al, or the like. Yes. In this embodiment, the electrical connection member 30 is a clip made of Cu, and is connected to the first electronic component 11 and the second lead portion 102 by solder (not shown).

  As shown in FIG. 1 or FIG. 3, the second electronic component 12 is mounted on the third lead portion 103 via a conductive bonding material 40 such as solder and is electrically connected to the third lead portion 103. At the same time, it is electrically connected to the first lead portion 101 via the second wire 14. Further, as shown in FIG. 3, the second electronic component 12 is electrically connected to the fourth lead portion 104 via a shunt resistor 16 connected by a conductive bonding material 40 such as solder.

  As shown in FIG. 1 or FIG. 3, the shunt resistor 16 includes a resistor 162 having a predetermined resistance value, is arranged so as to bridge two members, and detects a current value between the two members. It is a member used for.

  In the present embodiment, as shown in FIG. 3, the shunt resistor 16 includes two legs 161 connected to the fourth lead portion 104 or the second electronic component 12 via the conductive bonding material 40, and a resistor 162. With. As shown in FIG. 3, the shunt resistor 16 has a normal direction Z (hereinafter, simply referred to as “normal direction Z”) with respect to the surface of the second electronic component 12 that faces the shunt resistor 16, as compared with the second electronic component 12. The resistor 162 connects the two leg portions 161 at a high position.

  On the one surface 16a including the surface of the resistor 162 in the shunt resistor 16, the third wire 15 is joined to the two places straddling the resistor 162, as shown in FIG. The first lead portion 101 is electrically connected via the wire 15. A roughened region 16b surrounding the joint is formed around the joint where the third wire 15 is joined in the shunt resistor 16 while leaving the joint. Details of the roughened area will be described later in detail along with the roughened areas formed on the lead frame 10.

  The wires 13 to 15 are made of a conductive material such as Al or Au, and are members that electrically connect various members as described above. For convenience, the first wire 13, the second wire 14, and the third wire 15 are used to distinguish the wires depending on the place where they are used, but these wires may all be made of the same material. Good.

  The mold resin 20 includes a part of each of the first lead part 101, the second lead part 102, the third lead part 103, and the fourth lead part 104, the electronic components 11 and 12, the shunt resistor 16, and the wires 13 to 15 and a member for sealing the electrical connection member 30. The mold resin 20 is made of, for example, a thermosetting resin such as an epoxy resin.

  The above is the basic configuration of the semiconductor device of this embodiment. In the semiconductor device of the present embodiment configured as described above, by measuring the potential difference generated in the shunt resistor 16 connected through the second electronic component 12 when the first electronic component 11 is driven, The value of the current flowing through the first electronic component 11 can be detected.

  In the semiconductor device of the present embodiment, other electronic components may be mounted in addition to the electronic components 11 and 12, and when the other electronic components are mounted, the leads having other lead portions. A configuration in which a frame is used may be employed.

  Next, regarding the roughened regions 1011, 1012, 1021, 1022, 1031, 1032, 1041, and 16b formed in the lead frame 10 and the shunt resistor 16 in the semiconductor device of the present embodiment, refer to FIGS. I will explain. In the following description, the roughened regions 1011, 1012, 1021, 1022, 1031, 1032, 1041, and 16b are collectively referred to simply as “roughened regions”.

  First, the shape of the roughened region and the formation thereof will be described.

  As shown in FIG. 4, in the semiconductor device of this embodiment, a roughened region having micro-order irregularities is formed in the lead frame 10 and the shunt resistor 16.

  Specifically, the roughened region is, for example, an unevenness (hereinafter referred to as “micrometer”) in which the surface roughness Ra, which is the arithmetic average roughness specified in the Japanese Industrial Standard (JIS standard), is in the micron order (for example, 1 to 10 μm). This is a region where unevenness) is formed. In the roughened region, for example, fine unevenness (hereinafter referred to as “nano unevenness”) having a surface roughness Ra of nano order (for example, 10 to 500 nm) may be formed on the surface of the micro unevenness.

  The roughened region is shaped so that the resin material can easily enter when it is coated with the mold resin 20, and exhibits an anchor effect, so that the mold is compared with the region of the lead frame 10 where the roughened region is not formed. This is a region where the adhesiveness with the resin 20 is increased. The micro unevenness and the nano unevenness in the roughened region are formed by laser irradiation.

  Specifically, for example, by irradiating the surface of the lead frame 10 or the surface of the shunt resistor 16 with a laser beam having a predetermined energy density, the metal material in the vicinity of the surface is partially melted or evaporated, thereby causing micro unevenness. Can be formed. Further, for example, the metal material evaporated by laser irradiation can be deposited on the micro unevenness or other regions, and the nano unevenness can be formed by solidifying the metal material.

  Next, the region where the roughened region is formed will be described.

  As shown in FIG. 4 or FIG. 5, in the first lead portion 101, a region that is different from the bonding portion to which the wires 13 to 15 are bonded and that is separated from the bonding portion and surrounds the bonding portion. A roughened region 1011 is formed. That is, each joint portion between the wires 13 to 15 and the first lead portion 101 has a structure surrounded by a region having high adhesion to the mold resin 20.

  Thereby, in each joint part of the wires 13-15 and the 1st lead part 101, even if the stress by stress, such as heat, arises, peeling with the mold resin 20 and the 1st lead part 101 is suppressed, and the said stress The disconnection of the wires 13 to 15 due to is suppressed.

  As shown in FIG. 3 or FIG. 4, a region on the one surface 16 a including the surface of the resistor 162 in the shunt resistor 16 and surrounding the joint portion while being separated from the joint portion to which the third wire 15 is joined. A roughened region 16b is formed.

  As a result, as in the roughened region 1011, the roughened region 16 b surrounding the joint portion of the shunt resistor 16 to which the third wire 15 is joined has improved adhesion with the mold resin 20 due to the anchor effect. It is suppressed that peeling occurs in the portion. As a result, disconnection of the third wire 15 caused by stress due to stress such as heat is suppressed.

  A roughened region 1021 is formed in a region surrounding the portion where the first electronic component 11 is mounted in the second lead portion 102, and surrounds a portion where the second electronic component 12 is mounted in the third lead portion 103. A roughened region 1031 is preferably formed in the region. The first electronic component 11 and the second electronic component 12 are surrounded by a roughened region 1021 or a roughened region 1031 having high adhesion to the mold resin 20, and peeling of the mold resin 20 due to stress is caused by these electronic components 11, This is because the progress to 12 is suppressed. Further, when the electronic components 11 and 12 are joined by solder, the solder is suppressed from being excessively wet and spread by the roughened regions 1021 and 1031, so that the solder can be stably joined.

  As shown in FIG. 3, in the first lead portion 101 to the fourth lead portion 104, roughened regions 1012, 1022, 1032, in a partial region that is in contact with the contour line of the mold resin 20 when viewed from the normal direction Z, 1041 is preferably formed. By making a region located on the outermost side of the region sealed with the mold resin 20 in the lead frame 10 into a roughened region, peeling between the mold resin 20 and the lead frame 10 due to stress in the roughened region is suppressed. The As a result, peeling between the mold resin 20 and the lead frame 10 in a region close to the outer region of the mold resin 20 where stress is most likely to be suppressed is suppressed, and a starting point of peeling hardly occurs, resulting in a highly reliable semiconductor device. is there.

  In the present embodiment, the lead frame 10 is a region different from the region where the electronic components 11 and 12, the wires 13 to 15, the shunt resistor 16 or the electrical connection member 30 are mounted, and the roughened region is formed. The non-roughened region is a flat non-roughened region that is not roughened. The lead frame 10 and the shunt resistor 16 may be configured to have a roughened region in which all of the regions that are in contact with the mold resin 20 are roughened, that is, the entire roughened configuration. It is preferable that it is set as the structure comprised. The smaller the roughened area, the less metal that evaporates by laser irradiation, and the lower the possibility that foreign matter will be generated by reattaching the evaporated metal to unintended locations. In other words, the configuration is such that the roughened region is kept to a minimum, so that a semiconductor device in which wire breakage is suppressed while reducing defects due to foreign matter is reduced.

  The “configuration in which the roughened region is minimized” in the present embodiment refers to a configuration in which the roughened regions 1011, 1012, 1021, 1022, 1031, 1032, 1041, and 16b shown in FIG. 3 are formed. Say. The minimum roughened region is appropriately changed depending on the components of the semiconductor device, but includes at least a region of the lead frame 10 that surrounds the joint portion while being separated from the joint portion of the lead frame 10 and the wire. Moreover, about the area of each roughening area | region, it is arbitrary and it changes suitably.

  Next, a preferable formation region of the roughened regions 1011 and 16b surrounding the portion where the wires 13 to 15 are joined will be described with reference to FIGS. In addition, since it is the same about the preferable formation area | region of the roughening area | region 1011 and the roughening area | region 16b, here, the roughening area | region 16b formed in the shunt resistance 16 is mainly demonstrated. In FIG. 5 and FIG. 6, elements other than the regions V and VI in FIG. 4 and the mold resin 20 are omitted for easy understanding.

  As shown in FIG. 1 or FIG. 5, the roughened region 1011 surrounds the joint portion while being separated from the joint portion where the wires 13 to 15 are joined in the first lead portion 101 when viewed from the normal direction Z. It is formed in a frame-like region. As shown in FIG. 1 or FIG. 6, the roughened region 16 b is formed in a frame-like region surrounding the joint portion while leaving the joint portion of the shunt resistor 16 where the third wire 15 is joined. Yes. As shown in FIG. 5 or FIG. 6, the region surrounded by the roughened region 1011 and the region surrounded by the roughened region 16 b are the regions of the lead frame 10 where no other roughened regions are formed. Similarly, all are flat areas.

  As shown in FIG. 6, in the case where the roughened region 16b is formed so that the outer shape is a quadrangle and the inner shape is a circular frame, the corners of the outer shape are formed from the viewpoint of suppressing peeling. It is preferable to arrange the mold resin 20 along the direction of peeling. Here, the “peeling direction” means a direction in which a stress that peels the lead frame 10 and the mold resin 20 acts. In the present embodiment, the left-right direction shown in FIG. 6 is the X direction, and the direction orthogonal to the X direction on the paper surface of FIG. 6 is the Y direction, and the outline of the one surface 16a of the shunt resistor 16 and the outline of the roughened region 16b. The roughened region 16b is formed so that the line is parallel to the X direction and the Y direction.

  In addition, it is preferable that the roughening area | region 16b is made into a continuous frame shape from a viewpoint of progress suppression of peeling to a wire junction part. It is sufficient that the roughened region 16b is continuously formed without being interrupted at a position different from the peeling progress direction. For example, if the size is larger than the processing limit by laser irradiation (0.1 mm or more). It ’s enough. The same applies to the roughened region 1011.

  Further, as shown in FIG. 6, when the radius of a region surrounded by the roughened region 16b having a frame shape, that is, a circular region that is not a roughened region is A1, A1 is 0.6 mm or more. It is preferable to do. As a result, even if the joint portion between the third wire 15 and the shunt resistor 16 is slightly deviated from the center position of the circular region due to the dimensional tolerance of the third wire 15, the joint portion is roughened. It is possible to prevent overlapping with the region 16b. That is, the junction between the shunt resistor 16 and the third wire 15 is performed in the non-roughened region surrounded by the roughened region 16b, and these junctions are stabilized.

  Even if the inner shape of the roughened region 16b is different from a circular shape, for example, a square shape, an elliptical shape, or other shapes, the internal dimensions should be set in consideration of the dimensional tolerance of the bonding position. If it adjusts suitably, the joining of the 3rd wire 15 can be performed stably. The same applies to the roughened region 1011.

  Next, a method for manufacturing the semiconductor device of this embodiment will be described. Since the semiconductor device of this embodiment is the same as a general semiconductor device manufacturing process except that a roughened region is formed in a specific region in advance, it will be briefly described here.

  A lead frame 10 including a first lead portion 101, a second lead portion 102, a third lead portion 103, and a fourth lead portion 104 is prepared by punching a metal plate made of Cu by press working or the like.

  A roughened region is formed by laser irradiation in the outer region of the region surrounding the region where the electronic components 11 and 12 are mounted in the lead frame 10, the region surrounding the region where the wires 13 to 15 are joined, and the region sealed with the mold resin 20. Form. Further, a roughened region is formed by laser irradiation in a region surrounding the region where the third wire 15 is joined in the shunt resistor 16.

  Then, the first electronic component 11 is placed on the region surrounded by the roughened region 1021 in the second lead portion 102, and the second electronic component 12 is placed on the region surrounded by the roughened region 1031 in the third lead portion 103. It is mounted via a conductive bonding material 40. Subsequently, the shunt resistor 16 is mounted via the conductive bonding material 40 so as to bridge the second electronic component 12 and the third lead portion 103. Further, the first electronic component 11 and the second lead portion 102 are connected by the electrical connection member 30 via the conductive bonding material 40.

  Thereafter, the first electronic component 11, the second electronic component 12, the shunt resistor 16 and the first lead portion 101 are connected by wire bonding, and these members are electrically connected via the wires 13-15.

  After wire connection, a part of the lead frame 10, the electronic components 11 and 12, the wires 13 to 15, the shunt resistor 16, and the electrical connection member 30 are made of a thermosetting resin material such as epoxy resin using a mold (not shown). A mold resin 20 for sealing is formed. In this way, the semiconductor device of this embodiment can be manufactured.

  In addition, said manufacturing method is only an example and said manufacturing process may be mixed. Specifically, if necessary, after the shunt resistor 16 is mounted on the lead frame 10, the roughened region 16b may be formed by laser irradiation.

  Specifically, in the example of the manufacturing method described above, the example in which the roughened region 16b is formed on the shunt resistor 16 by laser irradiation before the shunt resistor 16 is mounted on the lead frame 10 has been described. However, the shunt resistor 16 has a smaller and three-dimensional shape than the lead frame 10, has few flat portions, and there is a portion that should not be roughened like the resistor 162. It is a member that requires higher laser processing accuracy. Therefore, the roughened region 16 b may be formed in the shunt resistor 16 after being mounted on the lead frame 10. For the above reason, it is not common to form a roughened region for the shunt resistor 16, but in this embodiment, the roughened region 16 b is intentionally formed on the shunt resistor 16, thereby connecting to the shunt resistor 16. The disconnection of the third wire 15 is suppressed.

  According to this embodiment, the joint between the wires 13 to 15 and the lead frame 10 or the shunt resistor 16 is surrounded by a roughened region having high adhesion to the mold resin 20. Even if peeling occurs, the peeling does not proceed to the joint. As a result, a semiconductor device in which disconnection of the wires 13 to 15 due to the peeling between the mold resin 20 and the lead frame 10 due to stress is suppressed is obtained.

  Similarly, since the electronic components 11 and 12 are surrounded by a roughened region having high adhesion to the mold resin 20, peeling of the mold resin 20 and the lead frame 10 due to stress is caused by the stress of the electronic components 11 and 12. Proceeding to the mounting portion is suppressed. Furthermore, since a part of the lead frame 10 that is in contact with the outer region of the mold resin 20 is a roughened region having high adhesion to the mold resin 20, the stress between the lead frame 10 and the mold resin 20 due to stress is increased. Peeling is suppressed. For this reason, peeling in the vicinity of the outer region of the mold resin 20 where stress is most likely to be suppressed is suppressed, disconnection of the wires 13 to 15 is suppressed, and a starting point of peeling is unlikely to occur.

  After forming a roughened region by laser irradiation on a part of the lead frame 10 and a part of the shunt resistor 16, wire connection is performed to form the mold resin 20, thereby disconnecting the wires 13 to 15 and the mold resin 20. A semiconductor device in which peeling of the metal is suppressed can be manufactured. Further, a roughened region having high adhesion with the mold resin 20 is formed on the lead frame 10 by laser irradiation, and the joint portion between the lead frame 10 and the wires 13 to 15 is surrounded by the roughened region, so that the polyamide resin is No need to apply. Thereby, the peeling of the lead frame 10 and the mold resin 20 is suppressed from proceeding to the joint portion between the lead frame 10 or the shunt resistor 16 and the wires 13 to 15, and the semiconductor device in which the disconnection of the wire is suppressed is inexpensive. Can be manufactured.

(Second Embodiment)
A semiconductor device according to the second embodiment will be described with reference to FIG. In FIG. 7, components other than the periphery of the shunt resistor 16 are omitted for easy understanding.

  In the semiconductor device of this embodiment, as shown in FIG. 7B, roughened regions 16 c are formed at two locations on the opposite side of the one surface 16 a of the shunt resistor 16 and separating the resistor 162. This is different from the first embodiment. In the present embodiment, this difference will be mainly described.

  As shown in FIG. 7A or 7B, the shunt resistor 16 is bonded to the third lead portion 103 and the second electronic component 12 via a conductive bonding material 40 made of, for example, solder. At this time, a part 40a of the melted solder may crawl up along the leg portion 161 of the shunt resistor 16, and the part 40a of the crazed solder rises to the resistor 162 as shown in FIG. When contacted, the potential difference between the two legs via the resistor 162 will fluctuate. When such contact between the solder and the resistor 162 occurs, accurate detection of the current value using the shunt resistor 16 is hindered.

  In order to prevent such a problem, the semiconductor device of this embodiment is configured such that two roughened regions 16c are formed in the shunt resistor 16, as shown in FIG. 7B. By forming the roughened region 16c, the wetted spread of the melted solder is inhibited by the roughened region 16c, and the excessive wetted spread of the solder is suppressed. Thereby, a semiconductor device in which contact between the melted solder and the resistor 162 is prevented is obtained.

  According to the present embodiment, it is possible to prevent a problem in the shunt resistor 16 due to excessive wetting and spreading of the solder, and to suppress the progress of the peeling of the mold resin 20 and the disconnection of the wires 13 to 15.

  Further, in the semiconductor device of this embodiment, the roughened region 16c is formed in advance by laser irradiation in the same manner as the roughened region 16b before the shunt resistor 16 is mounted on the third lead portion 103 and the second electronic component 12. Can be manufactured.

(Other embodiments)
The semiconductor device described in each of the above embodiments is an example of the semiconductor device of the present invention, and is not limited to each of the above embodiments, but within the scope described in the claims. Can be changed as appropriate. For example, examples of other embodiments will be described below with reference to FIGS. 8 to 10, and FIGS. 9 and 10 show a portion corresponding to the region V in FIG. 4 in the first lead portion 101. The components of other areas are omitted. 8 to 10 are not cross-sectional views, but are hatched for easy understanding of the configuration.

  (1) For example, in each said embodiment, although it was set as the structure provided with the two electronic components 11 and 12 and the one shunt resistor 16, it is not limited to such a structure, It mounts suitably. The number of the electronic components 11 and 12 and the shunt resistor 16 may be changed.

  Specifically, as shown in FIG. 8, a lead frame 10 having a first lead portion 101 and a second lead portion 102, a first electronic component 11, a first wire 13, and a mold resin 20 are provided. The shunt resistor 16 may not be provided. In such a configuration, the first electronic component 11 and the first lead portion 101 are electrically connected via the first wire 13 and at least the roughened region 1011 is formed in the lead frame 10. For example, it becomes a semiconductor device in which disconnection of the wire accompanying the resin peeling is suppressed.

  On the contrary, when it is set as the structure which increased the number of the electronic components 11 and 12 and the shunt resistance 16, the roughening area | region surrounding the said part is separated from at least the part to which the wires 13-15 were joined among the lead frames 10. If it is formed, a semiconductor device in which disconnection of the wire is suppressed is obtained. As described above, if the lead frame 10 or the shunt resistor 16 is separated from the bonding portion with the wire and the roughening region is formed in the region surrounding the bonding portion, the other electronic components 11 and 12 are used. The number of shunt resistors 16 and their arrangement may be changed as appropriate.

  (2) As shown in FIGS. 9A to 9C, when the first wire 13 is twist-bonded, the formation region of the roughened region 1011 is appropriately changed accordingly. Also good. For example, as shown in FIG. 9A, the roughened region 1011 may have a rectangular outer shape, an elliptical inner shape, or an outer shape as shown in FIG. 9B. Both the shape and the inner shape may be elliptical. Moreover, as shown in FIG.9 (c), you may be set as the structure which enclosed the junction part with the 1st wire 13 in the some roughening area | region. Further, the formation region of the roughened region 1011 is not limited to the example illustrated in FIGS. 9A to 9C, and may be changed to another pattern as appropriate. The same applies to the roughened region 16 b formed in the shunt resistor 16.

  (3) As shown in FIGS. 10A and 10B, apart from the roughened region 1011, a bonding recognition mark 50 used for positioning in wire bonding is applied to these roughened regions by laser irradiation. You may form near. Accordingly, the bonding recognition mark 50 that has been separately formed by pressing or the like can be performed together with the formation of the roughened region, and the manufacturing process can be simplified.

  As shown in FIG. 10A, the bonding recognition mark 50 may be provided so as to be surrounded by the roughened region 1011 with the non-roughened region interposed therebetween, or as shown in FIG. 10B. In addition, it may be provided outside the roughened region 1011. The planar shape of the bonding recognition mark 50 is arbitrary and appropriately determined. Also, the bonding recognition mark 50 may be formed near the roughened region 16b, and in this case, the same as described above.

  (4) In each of the above-described embodiments, the example in which the third wire 15 is joined to the one surface 16a including the surface of the resistor 162 as the shunt resistor 16 has been described. The 3rd wire 15 may be joined to the part. For example, when viewed from the normal direction Z, the third wire 15 is located at two positions, one leg 161 on the third lead 103 and the other leg 161 on the second electronic component 12. May be bonded, or the third wire 15 may be bonded to another position. At this time, in order to increase the detection accuracy of the current value in the shunt resistor 16, the sense bonding is performed in which the distances between the joint portions of the two third wires 15 and the resistor 162 are equal when viewed from the normal direction Z. It is preferable.

  (5) Here, in order to distinguish the roughened regions of the above embodiments, for convenience, the roughened region 1011 is the first roughened region, the roughened region 16b is the second roughened region, and the roughened region. 16c is a third roughened region, and roughened regions 1021 and 1031 are fourth roughened regions. For convenience, the roughened regions 1012, 1022, 1022, and 1041 are used as the fifth roughened region, and the second embodiment described the example in which the first roughened region to the fifth roughened region are formed. .

  However, depending on the components of the semiconductor device, only a part of the first roughened region to the fifth roughened region may be formed. For example, a semiconductor device in which the shunt resistor 16 is not mounted is a semiconductor device in which wire breakage is suppressed as long as at least the first roughened region is formed.

DESCRIPTION OF SYMBOLS 10 Lead frame 1011 Roughening area | region 11, 12 Electronic components 13-15 Wire 16 Shunt resistance 162 Resistor 16b Roughening area | region 20 Mold resin

Claims (10)

A lead frame (10) having a plurality of lead portions (101);
A wire (13) electrically connected to a part of the plurality of lead portions;
A mold resin (20) for sealing a portion of the wire and the lead portion including a joint portion joined to the wire;
Of the lead portion, a region that is sealed with the mold resin and is different from the joint portion, and is a roughened region that has micro-order irregularities in a region surrounding the joint portion while being separated from the joint portion. A semiconductor device in which (1011) is formed. An electronic component (11),
The lead frame includes a second lead portion (102) on which the plurality of lead portions are used as a plurality of first lead portions and is different from the plurality of first lead portions and on which the electronic component is mounted. ,
The semiconductor device according to claim 1, wherein a part of the electronic component and the second lead portion is sealed with the mold resin. A second electronic component (12) different from the first electronic component, wherein the electronic component is a first electronic component;
A second wire (14) and a third wire (15) different from the first wire, wherein the wire is a first wire;
A shunt resistor (16),
An electrical connection member (30),
The lead frame has the second electronic component mounted thereon, and is connected to the third lead portion (103) electrically connected to the first electronic component via the electrical connection member and the shunt resistor. And a fourth lead portion (104).
The shunt resistor bridges the second electronic component and the fourth lead portion and electrically connects them,
The second wire is configured to electrically connect the second electronic component to a different one of the plurality of first lead portions from the first lead portion to which the first wire is connected. And
The third wire electrically connects the shunt resistor to a different one of the plurality of first lead portions from the first lead portion to which the first wire or the second wire is connected. Connected to
The second electronic component, the electrical connection member, the shunt resistor, a part of the third lead part and a part of the fourth lead part are sealed with the mold resin,
The roughened region is defined as a first roughened region, and the first roughened region includes a region surrounding a portion of the first lead portion to which the second wire is connected, and the first lead portion of the first lead portion. Surrounding a portion to which the third wire is connected,
3. The semiconductor device according to claim 2, wherein a region surrounding the portion to which the third wire is connected in the shunt resistor is a second roughened region having a micro-order unevenness.   The surface of the shunt resistor that faces the second electronic component, between the resistor portion where the resistor (161) is disposed, and the portion joined to the second electronic component, and the resistance The semiconductor device according to claim 3, wherein a third roughened region (16c) having micro-order irregularities is formed between a body part and a portion joined to the fourth lead portion.   A region of the lead frame that is sealed with the mold resin, and a region in which the electronic component is mounted as viewed from a normal direction to a surface of the second lead portion on which the electronic component is mounted. 5. The semiconductor device according to claim 2, wherein the surrounding region is a fourth roughened region (1021, 1031) having micro-order unevenness.   A region of the lead frame that is sealed with the mold resin and is in contact with an outline of the mold resin when viewed from a normal direction to a surface of the second lead portion on which the electronic component is mounted. 6. The semiconductor device according to claim 2, wherein a region surrounding the region including the fifth region is a fifth roughened region (1012, 1022, 1032, 1041) having micro-order unevenness. Providing a lead frame (10) having a plurality of lead portions (101);
Bonding a wire (13) to a part of the plurality of lead portions;
Forming a mold resin (20) that seals a portion of the wire and the lead portion including a joint portion joined to the wire, and
Before bonding the wire, forming a roughened region (1011) having micro-order irregularities by laser irradiation in a region surrounding the portion while leaving the portion of the lead portion where the wire is bonded; A method for manufacturing a semiconductor device including: Preparing an electronic component (11);
Mounting the electronic component on the lead frame,
In preparing the lead frame, the lead frame uses the plurality of lead portions as first lead portions, and in addition to the first lead portion, a second lead portion (102 for mounting the electronic component) )
The method for manufacturing a semiconductor device according to claim 7, wherein in forming the mold resin, the electronic component and a part of the second lead portion are sealed. Preparing the second electronic component (12) as the first electronic component and mounting it on the lead frame;
Mounting a shunt resistor (16) to bridge and electrically connect two locations on the lead frame;
Bonding the second electronic component and the first lead portion via a second wire (14), using the wire as a first wire;
Joining the shunt resistor and the first lead portion via a third wire (15);
Before connecting the first wire to the third wire, the microscopic irregularities are formed by laser irradiation on the region surrounding the portion while leaving the portion of the first lead portion where the wires are joined. A second roughened region (101a) having a micro-order unevenness by laser irradiation in a region surrounding the portion while being apart from a portion where the third wire is joined in the shunt resistor. Forming a roughened region (16b),
In preparing the lead frame, as the lead frame, a third lead portion (103) for mounting the second electronic component, and a fourth lead portion (104) for mounting the shunt resistor, Prepare what has
In mounting the shunt resistor, the shunt resistor is mounted so as to bridge and electrically connect the second electronic component and the fourth lead portion,
In forming the mold resin, the second electronic component, the second wire, the third wire, a part of the third lead part, and a part of the fourth lead part are sealed. Item 9. A method for manufacturing a semiconductor device according to Item 8.   In mounting the shunt resistor, at least two locations on the surface of the shunt resistor on the side to be mounted on the second electronic component and sandwiching the resistor portion where the resistor (161) is formed. 10. The method of manufacturing a semiconductor device according to claim 9, wherein a roughened region (16c) having micro-order irregularities is formed in the region by laser irradiation.

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