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JP2018151322A - Internal temperature measuring device - Google Patents

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JP2018151322A
JP2018151322A JP2017049095A JP2017049095A JP2018151322A JP 2018151322 A JP2018151322 A JP 2018151322A JP 2017049095 A JP2017049095 A JP 2017049095A JP 2017049095 A JP2017049095 A JP 2017049095A JP 2018151322 A JP2018151322 A JP 2018151322A
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heat
insulating material
heat insulating
internal temperature
heat transfer
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Inventor
慎也 中川
Shinya Nakagawa
慎也 中川
将貴 矢和田
Masaki Yawata
将貴 矢和田
剛 ▲濱▼口
剛 ▲濱▼口
Tsuyoshi Hamaguchi
健文 山ノ井
Takefumi Yamanoi
健文 山ノ井
宏明 佐土原
Hiroaki Sadohara
宏明 佐土原
森 健太郎
Kentaro Mori
健太郎 森
松本 直樹
Naoki Matsumoto
直樹 松本
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Omron Corp
Omron Healthcare Co Ltd
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Omron Corp
Omron Healthcare Co Ltd
Omron Tateisi Electronics Co
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Abstract

【課題】測定対象物の内部温度を精度良く求めることを可能とする技術を提供する。【解決手段】互いに対向する外面として第一面と第二面とを有し、測定対象物の内部温度の測定時に、前記第一面が前記測定対象物側に位置され、前記第二面が前記測定対象物から離れた外部環境側に位置される伝熱部121と、前記伝熱部121の前記第一面及び前記第二面における温度を計測する計測部122と、前記伝熱部121の前記第一面及び前記第二面の外周を囲む位置に配置され、前記測定対象物から前記伝熱部121を介さずに外部環境へ移動する熱の影響を無視できる程度に前記伝熱部121よりも高い熱抵抗値、又は前記伝熱部121と同じ熱抵抗値を有する断熱材13とを備える。【選択図】図3PROBLEM TO BE SOLVED: To provide a technique capable of accurately obtaining an internal temperature of an object to be measured. SOLUTION: It has a first surface and a second surface as outer surfaces facing each other, and when measuring the internal temperature of a measurement object, the first surface is located on the measurement object side, and the second surface is A heat transfer unit 121 located on the external environment side away from the measurement object, a measurement unit 122 for measuring the temperature on the first surface and the second surface of the heat transfer unit 121, and the heat transfer unit 121. The heat transfer unit is arranged at a position surrounding the outer periphery of the first surface and the second surface, and the influence of heat transferred from the measurement object to the external environment without passing through the heat transfer unit 121 can be ignored. It includes a heat insulating material 13 having a thermal resistance value higher than 121 or the same thermal resistance value as the heat transfer unit 121. [Selection diagram] Fig. 3

Description

本発明は、測定対象物の内部温度を測定する内部温度測定装置に関する。   The present invention relates to an internal temperature measuring device that measures the internal temperature of an object to be measured.

深部体温を測定する装置として、断熱材の上下面にそれぞれ温度センサを取り付けた熱流束センサを用いるものが知られている。   As an apparatus for measuring the deep body temperature, an apparatus using a heat flux sensor in which temperature sensors are respectively attached to upper and lower surfaces of a heat insulating material is known.

図1は、熱流束センサを用いて、深部体温を測定する際の説明図である。図1に示す熱流束センサ12は、伝熱部(断熱性部材)121と、伝熱部121の上面と下面の温度差及び下面の温度を測定する計測部122を備えている。   FIG. 1 is an explanatory diagram for measuring a deep body temperature using a heat flux sensor. The heat flux sensor 12 illustrated in FIG. 1 includes a heat transfer unit (heat insulating member) 121 and a measurement unit 122 that measures the temperature difference between the upper surface and the lower surface of the heat transfer unit 121 and the temperature of the lower surface.

深部体温を測定する際、熱流束センサ12は、図1(A)に示しているように、当該熱流束センサ12の下面が測定対象の体表面に密着される。このとき計測部122によって測定される断熱材下面の温度Trは、深部体温Tbよりも低くなる。また、体表面に密着された熱流束センサ12の計測部122によって測定される断熱材上面の温度Ttopは、
温度Trよりも低くなる。このときの熱の伝わりにくさを熱抵抗として示した熱等価回路は、図1(B)のように表される。尚、Rxは、非発熱体である皮下組織の熱抵抗値、Rpkgは、伝熱部121の熱抵抗値、Rairは、断熱材上面から外気へ熱が放出される場合の外部熱抵抗値である。
When measuring the deep body temperature, as shown in FIG. 1A, the heat flux sensor 12 has the lower surface of the heat flux sensor 12 in close contact with the body surface to be measured. At this time, the temperature Tr of the lower surface of the heat insulating material measured by the measuring unit 122 is lower than the deep body temperature Tb. Further, the temperature Ttop of the upper surface of the heat insulating material measured by the measuring unit 122 of the heat flux sensor 12 closely attached to the body surface is
It becomes lower than the temperature Tr. A heat equivalent circuit in which the difficulty of heat transfer at this time is shown as thermal resistance is expressed as shown in FIG. Rx is the thermal resistance value of the subcutaneous tissue that is a non-heating element, Rpkg is the thermal resistance value of the heat transfer section 121, and Rair is the external thermal resistance value when heat is released from the top surface of the heat insulating material to the outside air. is there.

体表面に密着させた熱流束センサの各部の温度が安定すると、皮下組織(非発熱体)を単位時間に通過する熱量と伝熱部121を単位時間に通過する熱量とが等しくなる。すなわち、熱流束センサの各部の温度が安定すると、以下の式(1)が成立する。   When the temperature of each part of the heat flux sensor in close contact with the body surface is stabilized, the amount of heat passing through the subcutaneous tissue (non-heating element) per unit time and the amount of heat passing through the heat transfer unit 121 per unit time become equal. That is, when the temperature of each part of the heat flux sensor is stabilized, the following expression (1) is established.

Figure 2018151322
従って、熱流束センサの各部の温度が安定している場合、式(1)をTbについて解いた以下の式(2)により、深部体温Tbを算出することができる。
Figure 2018151322
Therefore, when the temperature of each part of the heat flux sensor is stable, the deep body temperature Tb can be calculated by the following formula (2) obtained by solving the formula (1) for Tb.

Figure 2018151322
このように深部体温を算出する内部温度センサが例えば、特許文献1で提案されている。
Figure 2018151322
For example, Patent Document 1 proposes an internal temperature sensor that calculates the deep body temperature.

特開2015−114291号公報Japanese Patent Laying-Open No. 2015-114291 特開2016−161311号公報Japanese Patent Laying-Open No. 2006-161311

上記のように皮下組織を単位時間に通過する熱量と伝熱部を単位時間に通過する熱量とが等しく、式(2)が成立している状況では、外部熱抵抗値Rairの影響を受けないが、
実際には、図2に示すように熱流束センサ12の周囲、即ち横方向へ逃げてしまう熱流Iyがある。以下、この現象を熱流束の横逃げとも称す。この熱流Iyが大きく、無視できない状況では、横方向へ逃げる熱流Iyに対する熱抵抗Ryや、横方向へ逃げた熱が体表面から外部へ移動する際の熱抵抗値Rpkg´を考慮して、内部温度Tbの推定式を式(3
)のように表すことができる。

Figure 2018151322

なお、図2の例では、熱流束センサ12の周囲には熱抵抗となるものがないので、Rpkg´=0となり、内部温度Tbの推定式は、式(4)のようになる。
Figure 2018151322

式(4)では破線で囲んだ項に外部熱抵抗値Rairを含むことになり、この外部熱抵抗
値Rairが、熱流束センサ12の周囲における対流や放射によって変化するので、これが
内部温度Tbを推定する際の外乱要因となり、精度良く内部温度Tbを推定できなくなるという問題がある。 As described above, when the amount of heat passing through the subcutaneous tissue per unit time is equal to the amount of heat passing through the heat transfer unit per unit time, and the equation (2) is satisfied, it is not affected by the external thermal resistance value Rair. But,
Actually, there is a heat flow Iy that escapes around the heat flux sensor 12, that is, in the lateral direction, as shown in FIG. Hereinafter, this phenomenon is also referred to as heat flux lateral escape. In a situation where this heat flow Iy is large and cannot be ignored, the heat resistance Ry for the heat flow Iy escaping in the lateral direction and the heat resistance value Rpkg ′ when the heat escaping in the lateral direction moves from the body surface to the outside are taken into consideration. The equation for estimating the temperature Tb is given by the equation (3
).
Figure 2018151322

In the example of FIG. 2, since there is no thermal resistance around the heat flux sensor 12, Rpkg ′ = 0, and the estimation formula for the internal temperature Tb is as shown in Expression (4).
Figure 2018151322

In the expression (4), an external thermal resistance value Rair is included in a term surrounded by a broken line, and this external thermal resistance value Rair changes due to convection and radiation around the heat flux sensor 12, and this changes the internal temperature Tb. There is a problem that it becomes a disturbance factor in estimation, and the internal temperature Tb cannot be estimated accurately.

そこで、本発明の目的は、測定対象物の内部温度を精度良く求めることを可能とする技術を提供することにある。   Therefore, an object of the present invention is to provide a technique that makes it possible to accurately determine the internal temperature of a measurement object.

上記の課題を解決するための本発明の内部温度測定装置は、互いに対向する外面として第一面と第二面とを有し、測定対象物の内部温度の測定時に、前記第一面が前記測定対象物側に位置され、前記第二面が前記測定対象物から離れた外部環境側に位置される伝熱部と、前記伝熱部の前記第一面及び前記第二面における温度を計測する計測部と、前記伝熱部の前記第一面及び前記第二面の外周を囲む位置に配置され、前記測定対象物から前記伝熱部を介さずに外部環境へ移動する熱の影響を無視できる程度に前記伝熱部よりも高い熱抵抗値、又は前記伝熱部と同じ熱抵抗値を有する断熱材と、を備える。   An internal temperature measuring device of the present invention for solving the above problems has a first surface and a second surface as outer surfaces facing each other, and when measuring the internal temperature of a measurement object, the first surface is The heat transfer part is located on the measurement object side, and the second surface is located on the external environment side away from the measurement object, and the temperature at the first surface and the second surface of the heat transfer part is measured. And the measurement unit that is disposed at a position surrounding the outer periphery of the first surface and the second surface of the heat transfer unit, and the influence of heat that moves from the measurement object to the external environment without passing through the heat transfer unit. And a heat insulating material having a heat resistance value higher than that of the heat transfer section or a heat resistance value equal to that of the heat transfer section.

このように断熱材を伝熱部と隣接して配置し、断熱材の熱抵抗値と伝熱部の熱抵抗値を同じにすることにより、熱流束の横逃げを防止し、外部環境の熱抵抗値の影響を受けずに測定対象物の内部温度を推定できるので、精度良く内部温度を求めることができる。なお、断熱材の熱抵抗値を伝熱部の熱抵抗値よりもやや高い値とした場合には、断熱材を設けない場合と比べて横流入する熱流束が生じ、これが外部環境の熱抵抗値の影響を受けてしまうため、精度良く内部温度を求めることができない。そこで、断熱材の熱抵抗値を伝熱部の熱抵抗値に対し、外部環境へ移動する熱の影響を無視できる程度に高くすることで、伝熱部から横逃げする熱流束、又は反対に伝熱部へ流入する熱流束を許容範囲内とし、精度良く内部温度を求めることができる。   In this way, the heat insulating material is arranged adjacent to the heat transfer part, and the heat resistance value of the heat insulating material and the heat resistance value of the heat transfer part are made the same, thereby preventing the heat flux from escaping and the heat of the external environment. Since the internal temperature of the measurement object can be estimated without being affected by the resistance value, the internal temperature can be obtained with high accuracy. When the heat resistance value of the heat insulating material is set to a value slightly higher than the heat resistance value of the heat transfer section, a heat flux that flows laterally is generated compared to the case where no heat insulating material is provided, and this is the heat resistance of the external environment. Since it is influenced by the value, the internal temperature cannot be obtained with high accuracy. Therefore, by making the heat resistance value of the heat insulating material higher than the heat resistance value of the heat transfer part to such an extent that the influence of heat moving to the external environment can be ignored, the heat flux that escapes from the heat transfer part, or conversely, The heat flux flowing into the heat transfer section is within an allowable range, and the internal temperature can be obtained with high accuracy.

また、本発明の内部温度測定装置は、前記断熱材を第一の断熱材とし、前記伝熱部の前
記第二面を覆う第二の断熱材を備え、前記第一の断熱材及び前記第二の断熱材の熱抵抗値を前記伝熱部よりも高く設定してもよい。
Moreover, the internal temperature measuring device of the present invention includes the second heat insulating material that covers the second surface of the heat transfer section, the first heat insulating material and the first heat insulating material as the first heat insulating material. You may set the heat resistance value of a 2nd heat insulating material higher than the said heat-transfer part.

これにより、横逃げする熱流束が無視できる程度に少なくなり、外部環境の熱抵抗値の影響を受けずに測定対象物の内部温度を推定できるので、精度良く内部温度を求めることができる。   As a result, the heat flux that escapes sideways is reduced to a negligible level, and the internal temperature of the measurement object can be estimated without being affected by the thermal resistance value of the external environment, so that the internal temperature can be obtained with high accuracy.

また、本発明の内部温度測定装置は、前記測定時に前記測定対象物側に位置される前記断熱材の面と前記測定対象物との間に防水性の層を備えてもよい。   Moreover, the internal temperature measuring apparatus of this invention may be equipped with a waterproof layer between the surface of the said heat insulating material located in the said measurement object side at the time of the said measurement, and the said measurement object.

これにより、断熱材に水分が付着して断熱性が低下し、測定精度が低下することを防止できる。   Thereby, it can prevent that moisture adheres to a heat insulating material, heat insulation falls, and measurement accuracy falls.

また、本発明の内部温度測定装置は、前記測定時に前記外部環境側に位置される前記断熱材の面と前記外部環境との間、及び前記伝熱部の第二面と前記外部環境との間に、赤外線吸収率の低い層を備えてもよい。これにより、外部から熱が流入して測定精度が低下することを防止できる。   Moreover, the internal temperature measuring device of the present invention is provided between the surface of the heat insulating material positioned on the external environment side during the measurement and the external environment, and between the second surface of the heat transfer section and the external environment. A layer having a low infrared absorptance may be provided therebetween. Thereby, it can prevent that heat | fever flows in from the outside and a measurement precision falls.

また、本発明の内部温度測定装置は、前記伝熱部と前記計測部がMEMSプロセスによって製造された熱流束センサを構成してもよい。これにより、熱流束センサの熱抵抗を小さくし、精度良く内部温度を求めることができる。   Moreover, the internal temperature measuring apparatus of this invention may comprise the heat flux sensor with which the said heat-transfer part and the said measurement part were manufactured by the MEMS process. Thereby, the thermal resistance of the heat flux sensor can be reduced, and the internal temperature can be obtained with high accuracy.

また、本発明の内部温度測定装置は、前記伝熱部、前記計測部及び前記断熱材を収容する筐体を備え、前記第一面又は前記第二面の法線方向から視た場合の前記断熱材の外形及びこれを内包する前記筐体の外形が、円又は五角以上の多角形としてもよい。これにより、断熱材の外形を必要最小限の円形とするか、少なくとも矩形よりも円に近い多角形(即ち五角以上の多角形)として当該外形を矩形とするよりも小さくし、これを内包する筐体の外形も同様に小さくすることで、筐体と測定対象物との接触面積を少なくし、内部温度の測定時に、筐体を介して熱流束が逃げること(熱流束の横逃げ)を抑え、精度良く内部温度を求めることができる。   Moreover, the internal temperature measuring device of the present invention includes a housing that accommodates the heat transfer unit, the measurement unit, and the heat insulating material, and when viewed from the normal direction of the first surface or the second surface. The outer shape of the heat insulating material and the outer shape of the housing containing the heat insulating material may be a circle or a polygon having five or more corners. Thereby, the outer shape of the heat insulating material is made the minimum necessary circle, or at least the polygon is closer to the circle than the rectangle (that is, the polygon more than the pentagon) is smaller than the rectangle, and the outer shape is included. Similarly, by reducing the outer shape of the housing, the contact area between the housing and the object to be measured is reduced, and heat flux escapes through the housing (lateral escape of heat flux) when measuring the internal temperature. The internal temperature can be obtained with high accuracy.

本発明によれば、測定対象物の内部温度を精度良く求めることを可能とする。   According to the present invention, it is possible to accurately determine the internal temperature of the measurement object.

図1は、熱流束センサを用いて、深部体温を測定する際の説明図である。FIG. 1 is an explanatory diagram for measuring a deep body temperature using a heat flux sensor. 図2は、測定時に横方向へ逃げる熱流束の説明図である。FIG. 2 is an explanatory diagram of the heat flux that escapes laterally during measurement. 図3は、第1実施形態に係る内部温度測定装置の概略構成を示す図である。FIG. 3 is a diagram illustrating a schematic configuration of the internal temperature measurement device according to the first embodiment. 図4は、センサユニットの平面図である。FIG. 4 is a plan view of the sensor unit. 図5は、実施形態1に係る熱等価回路を示す図である。FIG. 5 is a diagram illustrating a thermal equivalent circuit according to the first embodiment. 図6は、実施形態2に係るセンサユニットの説明図である。FIG. 6 is an explanatory diagram of a sensor unit according to the second embodiment. 図7は、実施形態3に係るセンサユニットの説明図である。FIG. 7 is an explanatory diagram of a sensor unit according to the third embodiment. 図8は、実施形態4に係るセンサユニットの説明図である。FIG. 8 is an explanatory diagram of a sensor unit according to the fourth embodiment. 図9は、実施形態4に係るセンサモジュールの一例を示す図である。FIG. 9 is a diagram illustrating an example of a sensor module according to the fourth embodiment. 図10は、実施形態4に係るセンサモジュールの変形例を示す図である。FIG. 10 is a diagram illustrating a modification of the sensor module according to the fourth embodiment.

以下、本技術を適用した具体的な実施の形態について、図面を参照しながら説明する。
〈実施形態1〉
図3は、本発明の第1実施形態に係る内部温度測定装置10の概略構成を示す図、図4
は、センサユニット101の平面図である。図3に示しているように、内部温度測定装置10は、センサユニット101と、本体102とを備え、センサユニット101と本体102とがケーブル103によって電気的に接続されている。
Hereinafter, specific embodiments to which the present technology is applied will be described with reference to the drawings.
<Embodiment 1>
FIG. 3 is a diagram showing a schematic configuration of the internal temperature measuring apparatus 10 according to the first embodiment of the present invention.
FIG. 3 is a plan view of the sensor unit 101. As shown in FIG. 3, the internal temperature measurement apparatus 10 includes a sensor unit 101 and a main body 102, and the sensor unit 101 and the main body 102 are electrically connected by a cable 103.

センサユニット101は、筐体11と、この筐体11の底部11a上に配設された熱流束センサ12、断熱材13、演算回路14、ターミナル15を備える。尚、以下の説明において、各部(熱流束センサ12等)の上、下、左、右とは、それぞれ、図3に示した状態にある各部の上、下、左、右のことである。また、図3の紙面と垂直な方向からみた手前側と奥側を前、後とし、この前後方向や左右方向などの上下方向と直交する方向を横方向とも称す。本例の内部温度測定装置10は、センサユニット101の下面を測定対象物の表面に接触させて使用される。   The sensor unit 101 includes a housing 11, a heat flux sensor 12, a heat insulating material 13, an arithmetic circuit 14, and a terminal 15 disposed on the bottom 11 a of the housing 11. In the following description, “up”, “down”, “left”, and “right” of each part (heat flux sensor 12 and the like) mean “up”, “down”, “left”, and “right” of each part in the state shown in FIG. Also, the front side and the back side as viewed from the direction perpendicular to the paper surface of FIG. 3 are the front and rear, and the direction perpendicular to the vertical direction such as the front-rear direction and the left-right direction is also referred to as the horizontal direction. The internal temperature measuring apparatus 10 of this example is used by bringing the lower surface of the sensor unit 101 into contact with the surface of the measurement object.

筐体11は、図4(A)に示すように、上方から視た場合の外形、換言すると測定対象物との接触面(図4におけるX−Y面)の外形が円形であり、この中央に熱流束センサ12が配置され、熱流束センサ12の周囲に外形を円形とした断熱材13が配置されている。このように断熱材13の外形を円形とすることで、測定対象物との接触面から上方へ移動する熱に対し、熱流束センサ12を中心として必要最小限の範囲を断熱するように構成している。また、断熱材13の外形は、最小限の円形に限らず、少なくとも矩形よりも円に近い多角形(即ち五角以上の多角形)とし、当該外形を矩形とするよりも小さくしてもよい。このように断熱材13の外形を円形や五角以上の多角形(図4(B)は6角形の例)とし、これを内包する筐体11の外形も図4(C)のように矩形に形成する場合と比べて小さくすることができ、筐体と測定対象物との接触面積を少なくし、内部温度の測定時に、筐体を介して熱流束が逃げること(熱流束の横逃げ)を抑えることができる。   As shown in FIG. 4A, the casing 11 has a circular outer shape when viewed from above, in other words, the outer shape of the contact surface with the measurement object (XY plane in FIG. 4). The heat flux sensor 12 is disposed on the heat flux sensor 12, and a heat insulating material 13 having a circular outer shape is disposed around the heat flux sensor 12. The outer shape of the heat insulating material 13 is circular in this way, so that the minimum necessary range centering on the heat flux sensor 12 is insulated against heat moving upward from the contact surface with the measurement object. ing. Further, the outer shape of the heat insulating material 13 is not limited to a minimum circle, but may be a polygon closer to a circle than at least a rectangle (that is, a pentagon or more), and the outer shape may be smaller than a rectangle. As described above, the outer shape of the heat insulating material 13 is a circle or a polygon having five or more pentagons (FIG. 4B is an example of a hexagon), and the outer shape of the housing 11 that encloses the outer shape is also rectangular as shown in FIG. 4C. Compared to the case where it is formed, the contact area between the housing and the object to be measured is reduced, and the heat flux escapes through the housing when the internal temperature is measured (lateral escape of heat flux). Can be suppressed.

また、筐体11内に水が侵入すると、正確な温度計測が妨げられるため、筐体11は、防水性を有していることが望ましい。   In addition, when water enters the housing 11, accurate temperature measurement is hindered. Therefore, the housing 11 is desirably waterproof.

更に、筐体11は、筐体11又は断熱材13よりも赤外線の吸収率の低い層を備え、断熱効果を高めることが望ましい。例えば、筐体11の上面にアルミニウムを蒸着したフィルム119を貼り付ける等、金属薄膜を形成する。ここで、赤外線の吸収率の低い層とは、赤外線の吸収率を、赤外線波長約10μmに対して0.1以下とした層である。本実施形態では、筐体11を構成している樹脂の赤外線吸収率が、0.95であるところ、アルミニウムを蒸着したフィルム119を貼付したことにより、この部分の赤外線吸収率を0.025にしている。   Furthermore, it is desirable that the housing 11 includes a layer having a lower infrared absorption rate than the housing 11 or the heat insulating material 13 to enhance the heat insulating effect. For example, a metal thin film is formed by attaching a film 119 on which aluminum is vapor-deposited on the upper surface of the housing 11. Here, the layer having a low infrared absorption rate is a layer having an infrared absorption rate of 0.1 or less with respect to an infrared wavelength of about 10 μm. In the present embodiment, the infrared absorptance of the resin constituting the housing 11 is 0.95. By attaching the film 119 on which aluminum is deposited, the infrared absorptance of this portion is set to 0.025. ing.

また、筐体11の底部11aは、必要な剛性が得られる範囲で、可能な限り薄く形成され、測定時に筐体11の底部11aを介して外形側へ熱流束が逃げることを防止している。また、内部温度測定装置10が、生体の内部温度の測定、即ち体温の測定に用いられる装置の場合、底部11aの下面(生体との接触面)に、平滑なシリコンシート等、生体に接触させた際に生体への刺激が少ない生体適合性を有した層を設けても良い。   Further, the bottom 11a of the casing 11 is formed as thin as possible within a range where necessary rigidity can be obtained, and prevents heat flux from escaping to the outer side through the bottom 11a of the casing 11 during measurement. . Further, when the internal temperature measuring device 10 is a device used for measuring the internal temperature of a living body, that is, measuring body temperature, the bottom surface of the bottom portion 11a (contact surface with the living body) is brought into contact with the living body such as a smooth silicon sheet. A layer having biocompatibility with little irritation to the living body may be provided.

熱流束センサ12は、伝熱部121と、伝熱部121の下面(第一面)から上面(第二面)に伝達される熱流束を計測する計測部122とを備えている。計測部122は、例えば、サーモパイルにより、下面(温接点)22aと上面(冷接点)22bとの温度差を検出し、基準温度として下面における温度を検出する。これに限らず、計測部122は、伝熱部121の下面(第一面)及び上面(第二面)における温度をそれぞれ計測し、この温度差(温度勾配)によって熱流束を計測するものであってもよい。   The heat flux sensor 12 includes a heat transfer unit 121 and a measurement unit 122 that measures the heat flux transmitted from the lower surface (first surface) to the upper surface (second surface) of the heat transfer unit 121. The measuring unit 122 detects, for example, a temperature difference between the lower surface (hot contact) 22a and the upper surface (cold contact) 22b by a thermopile, and detects the temperature on the lower surface as a reference temperature. Not only this but the measurement part 122 measures the temperature in the lower surface (1st surface) and upper surface (2nd surface) of the heat-transfer part 121, respectively, and measures a heat flux by this temperature difference (temperature gradient). There may be.

断熱材13は、伝熱部121の下面及び上面の外周を囲む位置、即ち伝熱部121の下面や上面の法線と直交する方向において伝熱部121と隣接する位置に配置されている。
換言すると、熱流束センサ12の側面、即ち伝熱部121の側面と隣接し、伝熱部121の下面と面一に筐体11の底部11a上に設けられている。また、断熱材13は、熱流束センサ12の伝熱部121と同じ熱抵抗値となるように構成されている。例えば、本実施形態では、熱流束センサ12の伝熱部121と同じ熱伝導率の樹脂を用いて断熱材13を構成することで、同じ熱抵抗値となるようにしている。
The heat insulating material 13 is disposed at a position surrounding the outer periphery of the lower surface and upper surface of the heat transfer unit 121, that is, at a position adjacent to the heat transfer unit 121 in a direction orthogonal to the normal line of the lower surface and upper surface of the heat transfer unit 121.
In other words, it is adjacent to the side surface of the heat flux sensor 12, that is, the side surface of the heat transfer unit 121, and is provided on the bottom 11 a of the housing 11 so as to be flush with the lower surface of the heat transfer unit 121. The heat insulating material 13 is configured to have the same thermal resistance value as that of the heat transfer unit 121 of the heat flux sensor 12. For example, in this embodiment, the heat resistance is configured by using the resin having the same thermal conductivity as that of the heat transfer unit 121 of the heat flux sensor 12 so as to have the same thermal resistance value.

演算回路14は、熱流束センサ12から入力される測定値に基づいて、測定対象物の内部温度を算出して出力する回路である。この演算回路14による内部温度の算出手順については後述する。また、演算回路14は、1つの素子(集積回路等)であっても、複数の素子からなるユニットであっても良い。さらに、演算回路14は、プログラミング可能な素子/ユニットであっても、プログラミングできない素子/ユニットであっても良い。   The arithmetic circuit 14 is a circuit that calculates and outputs the internal temperature of the measurement object based on the measurement value input from the heat flux sensor 12. The calculation procedure of the internal temperature by the arithmetic circuit 14 will be described later. The arithmetic circuit 14 may be a single element (such as an integrated circuit) or a unit composed of a plurality of elements. Further, the arithmetic circuit 14 may be a programmable element / unit or a non-programmable element / unit.

ターミナル15は、ケーブル103に含まれる電源線及び信号線が接続される接続部である。   The terminal 15 is a connection part to which a power supply line and a signal line included in the cable 103 are connected.

本体102は、信号線を介してセンサユニット101との間で通信を行うことにより、センサユニット101から内部温度の測定結果を受信する等の処理を行う制御部221や、受信した内部温度(測定結果)の表示を行う表示部222、内部温度の記録を行う記録部223、測定開始の操作や設定値の入力等の操作を行う操作部224、電源線を介してセンサユニット101へ電力を供給する電源部225を備えている。   The main body 102 communicates with the sensor unit 101 via a signal line, thereby performing processing such as receiving a measurement result of the internal temperature from the sensor unit 101, and the received internal temperature (measurement). Display unit 222 for displaying the result), recording unit 223 for recording the internal temperature, operation unit 224 for performing measurement start operations, setting value input operations, and the like, and supplying power to the sensor unit 101 via the power line. The power supply unit 225 is provided.

本例の内部温度測定装置10は、センサユニット101における底部11aの下面を、内部温度の測定対象物の表面に接触させて使用される。即ち、測定時に、熱流束センサ12における伝熱部121の下面(第一面)が測定対象物側に位置され、上面(第二面)が測定対象物から離れた外部環境側に位置される。このとき伝熱部121の下面の温度Trは、内部温度Tbよりも低くなる。また、伝熱部121の上面の温度Ttopは、温度Tr
よりも低くなる。このときの熱の低下の程度、即ち熱の伝わりにくさを熱抵抗として示した熱等価回路は、図5のように表される。尚、Rxは、内部の熱源と表面との間に位置する非発熱体の熱抵抗値、Rpkgは、伝熱部121の熱抵抗値、Rpkg´は、断熱材13の熱抵抗値、Rairは、外部環境の熱抵抗値である。
The internal temperature measurement device 10 of this example is used by bringing the lower surface of the bottom 11a of the sensor unit 101 into contact with the surface of the internal temperature measurement object. That is, at the time of measurement, the lower surface (first surface) of the heat transfer unit 121 in the heat flux sensor 12 is positioned on the measurement object side, and the upper surface (second surface) is positioned on the external environment side away from the measurement object. . At this time, the temperature Tr on the lower surface of the heat transfer section 121 is lower than the internal temperature Tb. Further, the temperature Ttop on the upper surface of the heat transfer section 121 is the temperature Tr
Lower than. A thermal equivalent circuit in which the degree of heat reduction at this time, that is, the difficulty in transferring heat is shown as thermal resistance is expressed as shown in FIG. Rx is the thermal resistance value of the non-heating element located between the internal heat source and the surface, Rpkg is the thermal resistance value of the heat transfer section 121, Rpkg 'is the thermal resistance value of the heat insulating material 13, and Rair is It is the thermal resistance value of the external environment.

測定対象物に密着させたセンサユニット101の各部の温度が安定すると、非発熱体を単位時間に通過する熱量と伝熱部を単位時間に通過する熱量とが等しくなる。すなわち、熱流束センサ12によって計測した熱流束に基づいて測定対象物の内部温度を推定できる。ここで、非発熱体内を移動する熱流束Iのうち、熱流束センサ12の伝熱部121を介さずに横方向へ移動する熱流束、即ち横逃げする熱流束を考慮すると、内部温度の推定式は、次の式(5)となる。   When the temperature of each part of the sensor unit 101 brought into close contact with the measurement object is stabilized, the amount of heat passing through the non-heating element per unit time becomes equal to the amount of heat passing through the heat transfer part per unit time. That is, the internal temperature of the measurement object can be estimated based on the heat flux measured by the heat flux sensor 12. Here, of the heat flux I moving in the non-heat generating body, the internal temperature is estimated in consideration of the heat flux that moves in the lateral direction without passing through the heat transfer section 121 of the heat flux sensor 12, that is, the heat flux that escapes sideways. The expression becomes the following expression (5).

Figure 2018151322

この場合、外部環境の熱抵抗値Rairは、外部環境の対流や放射の状況によって変動す
ることになるので、これを規定値として内部温度を求めると、精度良く内部抵抗を推定することができなくなってしまう。そこで、本実施形態では、断熱材13を伝熱部121と同じ熱伝導率の材料を用いて構成し、断熱材13の熱抵抗Rpkg´と伝熱部121の熱抵
抗Rpkgとを同一にしている。即ち、Rpkg´=Rpkgなので、内部温度の推定式を次式(
6)のように表すことができる。
Figure 2018151322

In this case, since the thermal resistance value Rair of the external environment varies depending on the convection and radiation conditions of the external environment, if the internal temperature is obtained using this as a specified value, the internal resistance cannot be accurately estimated. End up. Therefore, in this embodiment, the heat insulating material 13 is configured using a material having the same thermal conductivity as that of the heat transfer unit 121, and the heat resistance Rpkg ′ of the heat insulating material 13 and the heat resistance Rpkg of the heat transfer unit 121 are made the same. Yes. That is, since Rpkg ′ = Rpkg, the internal temperature estimation formula is
6).

Figure 2018151322

このように本実施形態では、断熱材13を熱流束センサ12と隣接して配置し、断熱材13の熱抵抗値と熱流束センサ12(伝熱部121)の熱抵抗値を同じにしたことにより、横逃げする熱流束の横逃げを防止し、外部環境の熱抵抗値Rairの影響を受けずに測定
対象物の内部温度Tbを推定できるので、精度良く内部温度Tbを求めることができる。
Figure 2018151322

Thus, in this embodiment, the heat insulating material 13 was arrange | positioned adjacent to the heat flux sensor 12, and the heat resistance value of the heat insulating material 13 and the heat resistance value of the heat flux sensor 12 (heat-transfer part 121) were made the same. Thus, the lateral escape of the heat flux that escapes laterally is prevented, and the internal temperature Tb of the measurement object can be estimated without being affected by the thermal resistance value Rair of the external environment, so that the internal temperature Tb can be obtained with high accuracy.

〈実施形態2〉
図6は、実施形態2に係るセンサユニット101の構成を示す図である。実施形態2のセンサユニット101は、前述の実施形態1と比較して、伝熱部121の上面を覆う第二の断熱材23を設けると共に、断熱材13、23の熱抵抗を伝熱部121よりも高くした構成が異なり、その他の構成は同じである。このため、実施形態2において、前述の実施形態1と同一の要素には同符号を付して再度の説明を省略する。
<Embodiment 2>
FIG. 6 is a diagram illustrating a configuration of the sensor unit 101 according to the second embodiment. The sensor unit 101 according to the second embodiment is provided with the second heat insulating material 23 that covers the upper surface of the heat transfer section 121 as compared with the first embodiment, and the heat resistance of the heat insulating materials 13 and 23 is set to the heat transfer section 121. The configuration is higher than the others, and the other configurations are the same. For this reason, in the second embodiment, the same elements as those in the first embodiment are denoted by the same reference numerals and the description thereof is omitted.

前述の実施形態1では、断熱材13の熱抵抗と伝熱部121の熱抵抗とを同じにすることで、外部環境の影響を除外したが、例えば実施形態1の構成で断熱材13の熱抵抗を伝熱部121よりもやや高い値とした場合には、断熱材13を設けない場合よりも横流入する熱流束が生じ、外乱要因を含むことになる。このため、単に断熱材13を配置しても外部環境へ移動する熱流束の影響を除外することができない。   In the first embodiment described above, the influence of the external environment is excluded by making the thermal resistance of the heat insulating material 13 and the heat resistance of the heat transfer section 121 the same, but for example, the heat of the heat insulating material 13 in the configuration of the first embodiment. When the resistance is set to a value slightly higher than that of the heat transfer section 121, a heat flux that flows laterally is generated as compared with the case where the heat insulating material 13 is not provided, and a disturbance factor is included. For this reason, even if it arrange | positions the heat insulating material 13 simply, the influence of the heat flux which moves to an external environment cannot be excluded.

そこで、実施形態2では、熱流束センサ12(伝熱部121)の上面に断熱材23を配置し、断熱材13、23の熱抵抗を伝熱部121と比べて充分に高くした。この場合の熱等価回路は、図6のようになり、次式(7)で表される。   Therefore, in the second embodiment, the heat insulating material 23 is disposed on the upper surface of the heat flux sensor 12 (heat transfer unit 121), and the heat resistance of the heat insulating materials 13 and 23 is sufficiently higher than that of the heat transfer unit 121. The thermal equivalent circuit in this case is as shown in FIG. 6 and is expressed by the following equation (7).

Figure 2018151322
Figure 2018151322

実施形態2では、断熱材13、23の熱抵抗Rpkg´が以下の式(8)のように熱流束
センサ12の熱抵抗Rpkgと比べて充分に大きい。

Figure 2018151322
In the second embodiment, the thermal resistance Rpkg ′ of the heat insulating materials 13 and 23 is sufficiently larger than the thermal resistance Rpkg of the heat flux sensor 12 as shown in the following formula (8).
Figure 2018151322

このため熱流束センサ12を介して外部環境へ移動する場合の熱抵抗と、断熱材13を介して外部環境へ移動する場合の熱抵抗とがほぼ同じとなり、横逃げする熱流束が無視できる程度に小さくなるので、内部温度の推定式を次式(9)のように近似できる。

Figure 2018151322
For this reason, the thermal resistance when moving to the external environment via the heat flux sensor 12 is almost the same as the thermal resistance when moving to the external environment via the heat insulating material 13, and the heat flux that escapes laterally is negligible. Therefore, the internal temperature estimation formula can be approximated as the following formula (9).
Figure 2018151322

ここで断熱材13、23の熱抵抗を充分に大きくするとは、例えば熱流束センサ12の熱抵抗Rpkgに対して5倍以上とし、横逃げする熱流束を許容範囲内に設定することであ
る。
Here, to sufficiently increase the thermal resistance of the heat insulating materials 13 and 23 is, for example, to set the thermal flux that escapes laterally within an allowable range by setting the thermal resistance Rpkg of the thermal flux sensor 12 to 5 times or more.

断熱材13、23の熱抵抗を大きくする場合、断熱材13、23として発泡材を用いるのが効果的である。例えば、スポンジの熱伝導率は、0.03[W/(m・K)]程度であり、熱流束センサ12の伝熱部121を樹脂等で形成した場合に、断熱材13、23としてスポンジを用いることで、断熱材13、23の熱抵抗を伝熱部の熱抵抗に対して充分に大きくできる。   When increasing the thermal resistance of the heat insulating materials 13 and 23, it is effective to use a foam material as the heat insulating materials 13 and 23. For example, the thermal conductivity of the sponge is about 0.03 [W / (m · K)], and when the heat transfer part 121 of the heat flux sensor 12 is formed of a resin or the like, the sponge is used as the heat insulating materials 13 and 23. By using this, the heat resistance of the heat insulating materials 13 and 23 can be made sufficiently larger than the heat resistance of the heat transfer section.

このように実施形態2では、熱流束センサ12の周囲と上面とに断熱材13、23を配置し、断熱材13、23の熱抵抗を熱流束センサ12(伝熱部121)と比べて充分に高くしたため、横逃げする熱流束が無視できる程度に少なくなり、外部環境の熱抵抗値Rairの影響を受けずに測定対象物の内部温度Tbを推定できるので、精度良く内部温度Tb
を求めることができる。
As described above, in the second embodiment, the heat insulating materials 13 and 23 are disposed around and on the upper surface of the heat flux sensor 12, and the heat resistance of the heat insulating materials 13 and 23 is sufficiently higher than that of the heat flux sensor 12 (heat transfer section 121). Therefore, the heat flux that escapes sideways is negligibly small, and the internal temperature Tb of the measurement object can be estimated without being affected by the thermal resistance value Rair of the external environment.
Can be requested.

〈実施形態3〉
図7は、実施形態3に係るセンサユニット101の構成を示す図である。実施形態2のセンサユニット101は、前述の実施形態1と比較して、断熱材13の熱抵抗を外部環境の熱抵抗値Rairに対して充分に大きくした構成が異なり、その他の構成は同じである。
このため、実施形態3において、前述の実施形態1と同一の要素には同符号を付して再度の説明を省略する。
<Embodiment 3>
FIG. 7 is a diagram illustrating a configuration of the sensor unit 101 according to the third embodiment. The sensor unit 101 of the second embodiment is different from the first embodiment in that the thermal resistance of the heat insulating material 13 is sufficiently larger than the thermal resistance value Rair of the external environment, and the other configurations are the same. is there.
For this reason, in the third embodiment, the same elements as those in the first embodiment are denoted by the same reference numerals and the description thereof is omitted.

上述のように実施形態1の構成で断熱材13の熱抵抗を伝熱部121よりもやや高い値とした場合には、横流入する熱流束の影響を除外することができない。そこで、実施形態3では、断熱材13の熱抵抗を外部環境の熱抵抗値Rairに対して充分に大きくした構成
としている。この場合の熱等価回路は、図7のようになり、次式(10)で表される。

Figure 2018151322
As described above, when the thermal resistance of the heat insulating material 13 is set to a value slightly higher than that of the heat transfer section 121 in the configuration of the first embodiment, it is not possible to exclude the influence of the heat flux that flows laterally. Therefore, in the third embodiment, the heat resistance of the heat insulating material 13 is set to be sufficiently larger than the heat resistance value Rair of the external environment. The thermal equivalent circuit in this case is as shown in FIG. 7, and is represented by the following equation (10).
Figure 2018151322

ここで実施形態3では、断熱材13の熱抵抗Rpkg´を外部環境の熱抵抗値Rairに対して充分に大きくしており、式(10)を次式(11)のように変形することができる。

Figure 2018151322

このように断熱材13の熱抵抗Rpkg´を外部環境の熱抵抗値Rairよりも大きく設定すると、横方向から熱流束センサ12へ流入する熱流束が存在することになるが、この熱流束は、式(11)のように外部環境の熱抵抗値Rairを含まない式で近似できるので、外
乱要因を除去して内部温度を推定できる。 Here, in the third embodiment, the thermal resistance Rpkg ′ of the heat insulating material 13 is sufficiently increased with respect to the thermal resistance value Rair of the external environment, and the formula (10) can be transformed into the following formula (11). it can.
Figure 2018151322

Thus, when the thermal resistance Rpkg ′ of the heat insulating material 13 is set to be larger than the thermal resistance value Rair of the external environment, there is a heat flux flowing into the heat flux sensor 12 from the lateral direction. Since it can be approximated by an expression that does not include the thermal resistance value Rair of the external environment as in Expression (11), the internal temperature can be estimated by removing the disturbance factor.

ここで断熱材13の熱抵抗を充分に大きくするとは、熱抵抗値Rairに対して例えば5
倍以上とし、熱流束センサ12へ流入する熱流束を許容範囲内に設定することである。
Here, to sufficiently increase the thermal resistance of the heat insulating material 13 is, for example, 5 to the thermal resistance value Rair.
The heat flux flowing into the heat flux sensor 12 is set within an allowable range.

断熱材13の熱抵抗を大きくする場合、断熱材13として発泡材を用いるのが効果的である。例えば、スポンジの熱抵抗は、0.03[W/(m・K)]程度であり、断熱材13としてスポンジを用いることで、断熱材13の熱抵抗を外部環境の熱抵抗値Rairに対して充
分に大きくできる。
When the thermal resistance of the heat insulating material 13 is increased, it is effective to use a foam material as the heat insulating material 13. For example, the thermal resistance of the sponge is about 0.03 [W / (m · K)]. By using the sponge as the heat insulating material 13, the heat resistance of the heat insulating material 13 is set to the heat resistance value Rair of the external environment. Can be large enough.

このように実施形態3では、断熱材13の熱抵抗を外部環境の熱抵抗値Rairと比べて
充分に高くしたため、外部環境の熱抵抗値Rairの影響を受けずに測定対象物の内部温度
Tbを推定できるので、精度良く内部温度Tbを求めることができる。
As described above, in the third embodiment, the thermal resistance of the heat insulating material 13 is sufficiently higher than the thermal resistance value Rair of the external environment. Therefore, the internal temperature Tb of the measurement object is not affected by the thermal resistance value Rair of the external environment. Therefore, the internal temperature Tb can be obtained with high accuracy.

〈実施形態4〉
図8は、実施形態4に係るセンサユニット101の構成を示す図である。実施形態4の内部温度測定装置10は、前述の実施形態2と比較して、熱流束センサ12をMEMSプロセスによって形成した熱流束センサ(以下、MEMSチップとも称す)120に置き換えた構成が異なり、その他の構成は同じである。このため、実施形態4において、前述の実施形態2と同一の要素には同符号を付して再度の説明を省略する。なお、実施形態4は、前述の実施形態2の熱流束センサ12をMEMSチップ120に置き換えたが、他の実施形態1,3の熱流束センサ12をMEMSチップ120に置き換えた構成としてもよい。
<Embodiment 4>
FIG. 8 is a diagram illustrating a configuration of the sensor unit 101 according to the fourth embodiment. The internal temperature measurement device 10 of the fourth embodiment is different from the second embodiment in the configuration in which the heat flux sensor 12 is replaced with a heat flux sensor (hereinafter also referred to as a MEMS chip) 120 formed by a MEMS process. Other configurations are the same. For this reason, in the fourth embodiment, the same elements as those in the above-described second embodiment are denoted by the same reference numerals, and the description thereof is omitted. In the fourth embodiment, the heat flux sensor 12 of the second embodiment is replaced with the MEMS chip 120. However, the heat flux sensor 12 of the first and third embodiments may be replaced with the MEMS chip 120.

図9は、実施形態4のセンサモジュール220の構成を示す図である。センサモジュール220は、基板31上に、シリコン等の半導体基板32が設けられ、この半導体基板32にサーモパイル等の計測部33がMEMSプロセスによって形成されたMEMSチップ120を備えている。計測部33は、半導体基板32の下面(温接点)32aと上面(冷接点)32bとの温度差や、下面における温度を検出する。実施形態4において、半導体基板32は、伝熱部の一形態である。   FIG. 9 is a diagram illustrating a configuration of the sensor module 220 of the fourth embodiment. The sensor module 220 includes a MEMS chip 120 on which a semiconductor substrate 32 such as silicon is provided on a substrate 31 and a measurement unit 33 such as a thermopile is formed on the semiconductor substrate 32 by a MEMS process. The measurement unit 33 detects the temperature difference between the lower surface (hot contact) 32a and the upper surface (cold contact) 32b of the semiconductor substrate 32 and the temperature at the lower surface. In the fourth embodiment, the semiconductor substrate 32 is a form of the heat transfer unit.

ハウジング36は、MEMSチップ120を内部に収容する形で基材121上に配設されている。ハウジング36は、MEMSチップ120により安定して熱流束を計測するため、ハウジング36内外の空気の出入を防止している。また、ハウジング36は無くても良い。   The housing 36 is disposed on the base material 121 so as to accommodate the MEMS chip 120 therein. Since the housing 36 stably measures the heat flux by the MEMS chip 120, the housing 36 prevents air from entering and leaving the housing 36. Further, the housing 36 may be omitted.

また、基板31上には、演算回路34やターミナル35が設けられている。演算回路34は、MEMSチップ120から入力される測定値に基づいて、測定対象物の内部温度を算出して出力する回路である。この演算回路34による内部温度の算出手順は、前述の演算回路14と同様である。ターミナル35は、ケーブル103に含まれる電源線及び信号線が接続される接続部である。ターミナル35及びケーブル103を介して本体102と通信が行われ、本体102にてセンサユニット101から内部温度の測定結果を受信する等の処理が行われる。   An arithmetic circuit 34 and a terminal 35 are provided on the substrate 31. The arithmetic circuit 34 is a circuit that calculates and outputs the internal temperature of the measurement object based on the measurement value input from the MEMS chip 120. The calculation procedure of the internal temperature by the arithmetic circuit 34 is the same as that of the arithmetic circuit 14 described above. The terminal 35 is a connection part to which a power supply line and a signal line included in the cable 103 are connected. Communication with the main body 102 is performed via the terminal 35 and the cable 103, and the main body 102 performs processing such as receiving a measurement result of the internal temperature from the sensor unit 101.

基板31上にMEMSチップ120、演算回路34、ターミナル35、ハウジング36を備えたセンサモジュール220は、筐体110内に収容されている。また、MEMSチップ120の周囲、即ちハウジング36の周囲には、断熱材13が設けられ、ハウジング36の上部には断熱材23が設けられている。   The sensor module 220 including the MEMS chip 120, the arithmetic circuit 34, the terminal 35, and the housing 36 on the substrate 31 is accommodated in the housing 110. Further, a heat insulating material 13 is provided around the MEMS chip 120, that is, around the housing 36, and a heat insulating material 23 is provided above the housing 36.

筐体110は、使用時の衝撃等からセンサモジュール220及び断熱材13,23を保護し、センサモジュール220及び断熱材13,23の位置関係を保つように所定の剛性を有している。筐体110は、熱抵抗を大きくし、熱の逃げを少なくするため、発泡材又は中空構造を採用しても良い。   The housing 110 has a predetermined rigidity so as to protect the sensor module 220 and the heat insulating materials 13 and 23 from an impact during use, and to maintain the positional relationship between the sensor module 220 and the heat insulating materials 13 and 23. The casing 110 may employ a foamed material or a hollow structure in order to increase thermal resistance and reduce heat escape.

また、筐体110内に水が侵入すると、正確な温度計測が妨げられるため、筐体110は、防水性を有していることが望ましい。断熱材13,23に発泡材を用いる場合に、断熱材13,23が水を含むと断熱性が損なわれるため、筐体110が防水性を有していることが特に望ましい。   In addition, when water enters the housing 110, accurate temperature measurement is hindered. Therefore, the housing 110 is desirably waterproof. In the case of using a foam material for the heat insulating materials 13 and 23, it is particularly desirable that the housing 110 is waterproof since the heat insulating properties are impaired when the heat insulating materials 13 and 23 contain water.

更に、筐体110は、赤外線の吸収率の低い層を備え、断熱効果を高めることが望ましい。例えば、筐体110の上面にアルミニウムを蒸着したフィルム119を貼り付ける等、金属薄膜を形成する。ここで、赤外線の吸収率の低い層とは、赤外線の吸収率を、赤外線波長約10μmに対して0.1以下とした層である。本実施形態では、筐体110を構成している樹脂の赤外線吸収率が、0.95であるところ、アルミニウムを蒸着したフィルム119を貼付したことにより、この部分の赤外線吸収率を0.025にしている。   Furthermore, it is desirable that the housing 110 includes a layer having a low infrared absorptance to enhance a heat insulating effect. For example, a metal thin film is formed by attaching a film 119 on which aluminum is vapor-deposited on the upper surface of the housing 110. Here, the layer having a low infrared absorption rate is a layer having an infrared absorption rate of 0.1 or less with respect to an infrared wavelength of about 10 μm. In this embodiment, the infrared absorptance of the resin constituting the housing 110 is 0.95. By attaching the film 119 on which aluminum is deposited, the infrared absorptance of this portion is set to 0.025. ing.

また、筐体110の底部110aは、横方向の熱抵抗を大きくし、熱流束の横逃げを防止するため、できるだけ薄く形成されている。   Further, the bottom 110a of the housing 110 is formed as thin as possible in order to increase the thermal resistance in the lateral direction and prevent the lateral escape of the heat flux.

なお、センサユニット101は、剛性の高い筐体にセンサモジュール220及び断熱材13,23を収容した構成に限らず、図10に示すように、センサモジュール220及び断熱材13,23の周囲に可撓性のフィルムを設けた構成としてもよい。   Note that the sensor unit 101 is not limited to a configuration in which the sensor module 220 and the heat insulating materials 13 and 23 are housed in a highly rigid housing, but can be disposed around the sensor module 220 and the heat insulating materials 13 and 23 as shown in FIG. It is good also as a structure which provided the flexible film.

図10の例において、断熱材13及びセンサモジュール220の下面、並びに断熱材13の周囲には、防水性のフィルム118が貼り付けられている。また、断熱材13,23の上面には、防水性を有し、且つ赤外線吸収率が低いアルミ蒸着フィルム119が貼りつけられている。図10のように断熱材13及びセンサモジュール220を覆う部材をフィルムとすることにより、測定時に横方向へ逃げる熱流束に対する熱抵抗を高くし、熱流束の横逃げを抑えることができる。   In the example of FIG. 10, a waterproof film 118 is attached to the lower surface of the heat insulating material 13 and the sensor module 220 and the periphery of the heat insulating material 13. In addition, an aluminum vapor deposition film 119 that is waterproof and has a low infrared absorptivity is attached to the upper surfaces of the heat insulating materials 13 and 23. By using a film that covers the heat insulating material 13 and the sensor module 220 as shown in FIG. 10, it is possible to increase the thermal resistance against the heat flux that escapes in the lateral direction during measurement, and to suppress the lateral escape of the heat flux.

また、実施形態によれば、熱流束センサをMEMSによって形成したMEMSチップ120としたことにより、熱流束センサの熱抵抗Rmが、実施形態1〜3における熱流束センサ12の熱抵抗Rpkgや、断熱材13,23の熱抵抗Rpkg´と比べて非常に小さいため、効果的に熱流束の横逃げを防止でき、精度良く内部温度を求めることができる。   Further, according to the embodiment, since the heat flux sensor is the MEMS chip 120 formed by MEMS, the heat resistance Rm of the heat flux sensor is equal to the heat resistance Rpkg of the heat flux sensor 12 in the first to third embodiments or the heat insulation. Since the heat resistance Rpkg ′ of the materials 13 and 23 is very small, the lateral escape of the heat flux can be effectively prevented, and the internal temperature can be obtained with high accuracy.

上述した本発明の実施形態及び変形例はあくまでも例示に過ぎず、本発明はこれに限定されるものではない。また、上述した実施形態及び変形例において示した特徴的な構成は、本発明の趣旨を逸脱しない範囲において当然にその組み合わせが可能である。   The above-described embodiments and modifications of the present invention are merely examples, and the present invention is not limited thereto. The characteristic configurations shown in the above-described embodiments and modifications can naturally be combined without departing from the spirit of the present invention.

10 内部温度測定装置
11 筐体
11a 底部
12 熱流束センサ
13,23 断熱材
14 演算回路
15 ターミナル
221 制御部
222 表示部
223 記録部
224 操作部
225 電源部
101 センサユニット
102 本体
103 ケーブル
DESCRIPTION OF SYMBOLS 10 Internal temperature measuring device 11 Housing | casing 11a Bottom part 12 Heat flux sensor 13, 23 Heat insulating material 14 Arithmetic circuit 15 Terminal 221, Control part 222 Display part 223 Recording part 224 Operation part 225 Power supply part 101 Sensor unit 102 Main body 103 Cable

Claims (6)

互いに対向する外面として第一面と第二面とを有し、測定対象物の内部温度の測定時に、前記第一面が前記測定対象物側に位置され、前記第二面が前記測定対象物から離れた外部環境側に位置される伝熱部と、
前記伝熱部の前記第一面及び前記第二面における温度を計測する計測部と、
前記伝熱部の前記第一面及び前記第二面の外周を囲む位置に配置され、前記測定対象物から前記伝熱部を介さずに外部環境へ移動する熱の影響を無視できる程度に前記伝熱部よりも高い熱抵抗値、又は前記伝熱部と同じ熱抵抗値を有する断熱材と、
を備えることを特徴とする内部温度測定装置。
There are a first surface and a second surface as outer surfaces facing each other, and when measuring the internal temperature of the measurement object, the first surface is positioned on the measurement object side, and the second surface is the measurement object A heat transfer section located on the external environment side away from
A measuring unit for measuring temperatures on the first surface and the second surface of the heat transfer unit;
It is arranged at a position surrounding the outer circumferences of the first surface and the second surface of the heat transfer part, and to the extent that the influence of heat moving from the measurement object to the external environment without passing through the heat transfer part can be ignored. A heat resistance value higher than the heat transfer part, or a heat insulating material having the same heat resistance value as the heat transfer part,
An internal temperature measuring device comprising:
前記断熱材を第一の断熱材とし、前記伝熱部の前記第二面を覆う第二の断熱材を備え、前記第一の断熱材及び前記第二の断熱材の熱抵抗値を前記伝熱部よりも高く設定した請求項1に記載の内部温度測定装置。   The heat insulating material is a first heat insulating material, and a second heat insulating material that covers the second surface of the heat transfer section is provided, and the heat resistance values of the first heat insulating material and the second heat insulating material are transmitted. The internal temperature measuring device according to claim 1 set higher than a heat part. 前記測定時に前記測定対象物側に位置される前記断熱材の面と前記測定対象物との間に防水性の層を備えた請求項1又は2に記載の内部温度測定装置。   The internal temperature measurement device according to claim 1 or 2, further comprising a waterproof layer between the surface of the heat insulating material positioned on the measurement object side during the measurement and the measurement object. 前記測定時に前記外部環境側に位置される前記断熱材の面と前記外部環境との間、及び前記伝熱部の第二面と前記外部環境との間に、前記断熱材よりも赤外線吸収率の低い層を備えた請求項1〜3の何れか1項に記載の内部温度測定装置。   Infrared absorptivity than the heat insulating material between the surface of the heat insulating material positioned on the external environment side during the measurement and the external environment, and between the second surface of the heat transfer section and the external environment. The internal temperature measuring device according to any one of claims 1 to 3, further comprising a low layer. 前記伝熱部と前記計測部がMEMSプロセスによって製造された熱流束センサを構成する請求項1〜4の何れか1項に記載の内部温度測定装置。   The internal temperature measurement device according to any one of claims 1 to 4, wherein the heat transfer unit and the measurement unit constitute a heat flux sensor manufactured by a MEMS process. 前記伝熱部、前記計測部及び前記断熱材を収容する筐体を備え、
前記第一面又は前記第二面の法線方向から視た場合の前記断熱材の外形及びこれを内包する前記筐体の外形が、円又は五角以上の多角形である請求項1〜5の何れか1項に記載の内部温度測定装置。
A housing that houses the heat transfer unit, the measurement unit, and the heat insulating material;
The outer shape of the heat insulating material when viewed from the normal direction of the first surface or the second surface and the outer shape of the housing that encloses the outer shape are a circle or a pentagon or more polygon. The internal temperature measuring device according to any one of the above.
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