JP2018148206A - Optical semiconductor device and package of optical semiconductor device - Google Patents

Abstract

An object of the present invention is to provide an optical semiconductor device and a package of the optical semiconductor device, which are characterized by low process difficulty, low cost, high resistance to ultraviolet rays and high light extraction efficiency as compared with conventional methods. By the way. An optical semiconductor device includes a substrate, a photoelectric semiconductor chip, and a package. The optical semiconductor chip is provided on the substrate. The package covers the photoelectric semiconductor chip on the substrate, and includes an ultraviolet light transmissive adhesive and a plurality of ultraviolet light transmissive particles, and the plurality of ultraviolet light transmissive particles are ultraviolet light transmissive adhesive. It is mixed in the agent. The weight% of the plurality of ultraviolet light transmissive particles in the package exceeds 50%, and the difference in refractive index between the plurality of ultraviolet light transmissive particles and the ultraviolet light transmissive adhesive is less than 0.02. The ultraviolet durability of the plurality of ultraviolet light-transmitting particles is superior to that of the ultraviolet light-transmitting adhesive. The present invention further discloses an optical semiconductor device package. [Selection] Figure 1

Description

  The present invention relates to an optical semiconductor device and a package of the optical semiconductor device, and more particularly to an optical semiconductor device capable of emitting ultraviolet light and a package of the optical semiconductor device.

  A light-emitting diode (LED) is a photoelectric element made of a semiconductor material, and the element has two electrode terminals. When a voltage is applied between the terminals, energy is generated by the combination of electrons and holes. Is emitted in the form of light. The light emitting diode has advantages such as energy saving, power saving, high efficiency, quick response, long life cycle, no mercury, and environmental protection effect. Among these, ultraviolet light-emitting diodes can be applied to fields such as medical treatment, biomedical beauty, plant growing light, sterilization, bio-validation, and industrial applications (photocuring and exposure).

  In the ultraviolet light emitting diode encapsulating technology, the encapsulant must use a transparent material in order to emit light, so the selection on the material is limited. Currently, a polymer resin material is commonly used as a sealing material for ultraviolet light emitting diodes (UV LEDs), but the polymer resin material is irradiated with short-wave blue light or UV (for example, a wavelength of 450 nm or less) for a long time. Deterioration due to deterioration, light transmittance decreases, and at the same time adhesiveness is lost, so there remains anxiety about the light emission effect and quality in the later stage of the product, providing an excellent sealing effect for a long period of UV LED Can not do it.

  In order to solve the above problems, in the sealing technique, the UV LED chip is placed in the carrier, and the carrier is coated with quartz glass as a sealing material so that the inside is further evacuated or nitrogen is added. A technique has already been developed in which a product can maintain stable light emission efficiency by enclosing gas to maintain high light transmittance characteristics at a short wavelength. However, at present, eutectic bonding (Eutectic) is used for most of the adhesion between quartz glass and a carrier (ceramics or metal material). However, the eutectic process is difficult and expensive. In addition, some persons skilled in the art must use an adhesive as a bonding agent between the quartz glass and the carrier, and there is a risk that the adhesive at the bonding portion will be similarly altered over a long period of time. In addition, the process of such a manufacturing method is difficult, the cost is considerably increased, and the light extraction efficiency is not satisfactory.

  An object of the present invention is to provide an optical semiconductor device and a package for the optical semiconductor device, which have features of low process difficulty, low cost, high resistance to ultraviolet rays and high light extraction efficiency as compared with conventional methods. is there.

  The optical semiconductor device presented by the present invention includes a substrate, a photoelectric semiconductor chip, and a package. The optical semiconductor chip is provided on the substrate. The package covers the photoelectric semiconductor chip on the substrate, and includes an ultraviolet light transmissive adhesive and a plurality of ultraviolet light transmissive particles, and the ultraviolet light transmissive adhesive includes a plurality of ultraviolet light proof adhesives. Translucent particles are mixed. The weight% of the plurality of ultraviolet light transmissive particles in the package exceeds 50%, and the difference in refractive index between the plurality of ultraviolet light transmissive particles and the ultraviolet light transmissive adhesive is less than 0.02. In addition, the ultraviolet durability of the plurality of ultraviolet light transmissive particles is superior to that of the ultraviolet light transmissive adhesive.

  An optical semiconductor device further presented by the present invention includes a substrate, a photoelectric semiconductor chip, and a package. The photoelectric semiconductor chip is provided on the substrate and emits light having an emission peak value of λ nm wavelength. The package covers the photoelectric semiconductor chip on the substrate, and includes an ultraviolet light transmissive adhesive and a plurality of ultraviolet light transmissive particles, and the ultraviolet light transmissive adhesive includes a plurality of ultraviolet light proof adhesives. Translucent particles are mixed. The weight% of the plurality of ultraviolet light-transmitting particles in the package exceeds 50%, and the particle diameter of the plurality of ultraviolet light-transmitting particles is less than λ / 4.

  In one embodiment, the difference in refractive index between the plurality of ultraviolet light transmissive particles and the ultraviolet light transmissive adhesive is less than 0.02, and the ultraviolet durability of the plurality of ultraviolet light transmissive particles is less than 0.02. The degree is superior to UV-resistant light-transmitting adhesive.

  In one embodiment, the median particle size of the plurality of ultraviolet light transmissive particles is less than λ / 10.

  In one embodiment, the particle size of each ultraviolet light transmissive particle is less than 40 nm.

  In one embodiment, the material of the UV light transmissive adhesive is a silicone or a fluoropolymer gel, and the silicone is a methyl gel, a phenyl gel, or a methyl-phenyl composite gel.

  In one embodiment, the UV light transmissive particles are quartz glass particles, borosilicate glass particles, or a combination thereof.

  In one embodiment, the weight% of the plurality of ultraviolet light transmissive particles in the package is 70% or more.

  In one embodiment, the light transmittance of the ultraviolet light transmissive particles is 90% or more.

  In one embodiment, the photoelectric semiconductor chip is an ultraviolet light emitting diode.

  In one embodiment, the substrate has an accommodation space, the photoelectric semiconductor chip is provided in the accommodation space, and the package is filled in the accommodation space and is connected by covering the photoelectric semiconductor chip.

  In one embodiment, the package protrudes from the receiving space and forms a lens.

  The package of the optical semiconductor device further presented by the present invention includes an ultraviolet light transmissive adhesive and a plurality of ultraviolet light transmissive particles, and the plurality of ultraviolet light transmissive particles are ultraviolet light transmissive resistant. It is mixed in the adhesive. The weight% of the plurality of ultraviolet light transmissive particles in the package exceeds 50%, and the difference in refractive index between the plurality of ultraviolet light transmissive particles and the ultraviolet light transmissive adhesive is less than 0.02. In addition, the ultraviolet durability of the plurality of ultraviolet light transmissive particles is superior to that of the ultraviolet light transmissive adhesive.

  In one embodiment, the material of the UV light transmissive adhesive is a silicone or a fluoropolymer gel, and the silicone is a methyl gel, a phenyl gel, or a methyl-phenyl composite gel.

  In one embodiment, the UV light transmissive particles are quartz glass particles, borosilicate glass particles, or a combination thereof.

  In one embodiment, the weight% of the plurality of ultraviolet light transmissive particles in the package is 70% or more.

  In one embodiment, the light transmittance of the ultraviolet light transmissive particles is 90% or more.

  In one embodiment, the particle size of each ultraviolet light transmissive particle is less than 40 nm. For example, ultraviolet light-resistant light-transmitting adhesives can be prepared by adjusting the formulation, for example, polydimethylsiloxane gel, phenyl silicone, condensed silicone, fluoropolymer gel, or a combination thereof. By adjusting the components, the refractive index increases even if the adhesive strength of the adjusted ultraviolet light-transmitting adhesive as a whole decreases. Although the adhesive strength of the UV-translucent adhesive after the adjustment is reduced, it is sufficient for fixing the UV-translucent particles, and the refractive index of the UV-transparent adhesive after the adjustment is Since it is close to ultraviolet light-transmitting particles and, in some cases, it is improved to the same level, no light refraction occurs.

  According to the above, in the optical semiconductor device of the present invention and the package of the optical semiconductor device, the weight% of the ultraviolet light transmissive particles in the package exceeds 50%, and the plurality of ultraviolet light transmissive particles And the difference in refractive index between the UV-transparent adhesive and the UV-transparent adhesive is less than 0.02, and the UV durability of the UV-transparent particles is superior to the UV-transparent adhesive. Alternatively, the weight% of the plurality of ultraviolet light-transmitting particles in the package exceeds 50%, and the particle diameter of the plurality of ultraviolet light-transmitting particles is less than λ / 4. As a result, the optical semiconductor device of the present invention has advantages in that the process difficulty is reduced, the cost is reduced, the resistance to ultraviolet rays and the light extraction rate are high, as compared with the prior art.

It is the schematic of the optical semiconductor device of one preferable Example of this invention. It is the schematic of the optical semiconductor device 1a of another preferable Example of this invention. It is the schematic of the optical semiconductor device 1b of another preferable Example of this invention. It is the schematic of the optical semiconductor device 1c of another preferable Example of this invention. It is the schematic of the optical semiconductor device 1b of another preferable Example of this invention. It is the schematic of the optical semiconductor device 1e of another preferable Example of this invention. It is the schematic of the electrical connection of the optical semiconductor device of FIG. 5A.

  In the following, an optical semiconductor device and an optical semiconductor device package according to a preferred embodiment of the present invention will be described with reference to the related drawings. The same components will be described with the same reference numerals. The drawings of all embodiments of the invention are schematic and do not represent actual dimensions and ratios. Further, “upper” and “lower” in the contents of the following embodiments are merely used to indicate relative positional relationships. Furthermore, one component is formed on the other components “above”, “above”, “below”, and “below” because one component in the embodiment and the other component are formed. Including the direct contact, or the case where there is another component between one component and the other component so that the one component and the other component are not in direct contact with each other.

  Please refer to FIG. 1, which is a schematic diagram of an optical semiconductor device 1 according to a preferred embodiment of the present invention.

  The optical semiconductor device 1 includes a substrate 11, a photoelectric semiconductor chip 12, and a package 13. The photoelectric semiconductor chip 12 is provided on the substrate 11. The photoelectric semiconductor chip 12 of the present embodiment is an ultraviolet light emitting diode (UV LED chip), and a vertical LED chip provided on the substrate 11 is taken as an example, but is not limited thereto. In other embodiments, a plurality of photoelectric semiconductor chips 12 may be provided on the substrate 11 in series or in parallel. The material of the substrate 11 includes glass, sapphire, quartz, ceramics, glass fiber, resinous material, metal, polymer material, or other combinations thereof. The substrate 11 of this embodiment is a metal / ceramic composite panel substrate.

  As shown in FIG. 1, both electrodes 121 and 122 of the photoelectric semiconductor chip 12 are located on both the upper and lower sides, and the electrodes 121 are provided on the substrate 11 via lead wires 15. The electrode 122 is connected to the conductive layer 151, and the electrode 122 is directly connected to another conductive layer 162 provided on the substrate 11. Thereby, the electrode 122 and the conductive layer 162 can be directly connected via, for example, a conductive adhesive layer (for example, a conductive adhesive, not shown). When a voltage is applied between the two conductive layers 161 and 162, the photoelectric semiconductor chip 12 (ultraviolet light emitting diode) is driven so as to emit light having an ultraviolet wavelength (the wavelength is, for example, 200 nm to 450 nm).

  The package 13 is made of a light-transmitting material, and the convex lens is directly formed by covering the photoelectric semiconductor chip 12 on the substrate 11. Among these, the package 13 includes an ultraviolet light transmissive adhesive 131 and a plurality of ultraviolet light transmissive particles, and the plurality of ultraviolet light transmissive particles 132 include the ultraviolet light transmissive adhesive. 131. The package 13 of this embodiment is a sealing material, and covers the substrate 11 to connect the photoelectric semiconductor chip 12. The material of the ultraviolet light resistant adhesive 131 is, for example, silicone or fluoropolymer gel, but is not limited thereto. Among these, examples of silicone include methyl gel (for example, polydimethylsiloxane (PDMS) gel), phenyl gel, and methyl-phenyl composite gel. In addition, examples of the material of the ultraviolet light transmissive particles 132 include, but are not limited to, quartz glass particles, borosilicate glass particles, or a combination thereof. Further, the light transmittance of the ultraviolet light-resistant translucent particles 132 is 90% or more (light transmittance ≧ 90%).

  Here, as a material of the ultraviolet light-resistant translucent adhesive 131, silicone or a fluorine polymer gel is taken as an example. Materials such as silicone or fluoropolymer gel themselves have high light transmittance, UV resistance and crack resistance, and are excellent in stability at high temperatures, but may deteriorate when irradiated with ultraviolet rays for a long time. There is. Therefore, in this embodiment, the ultraviolet light transmissive particles 132 are uniformly mixed in the ultraviolet light transmissive adhesive 131, but the ultraviolet durability of the added ultraviolet light transmissive particles 132 is the ultraviolet light transmissive resistance. In addition to being superior to the adhesive 131, the weight% of the plurality of ultraviolet light-transmitting particles 132 added is more than 50% but less than 90% by weight in the package 13. Preferably, it is 65% to 80%, but in some embodiments, the weight% of the plurality of ultraviolet light transmissive particles 132 in the package 13 is, for example, 70% or more. In addition, the difference in refractive index between the ultraviolet light transmissive particles 132 and the ultraviolet light transmissive adhesive 131 of this example is smaller than 0.02, but this is very close to the refractive index of both. This means that there is almost no refractive interface between the translucent particles 132 and the ultraviolet-resistant translucent adhesive 131. For example, the material of the UV light transmissive particle 132 is a glass particle, and the material of the UV light transmissive adhesive 131 is silicone or a fluorine polymer gel, and the characteristics of the entire package 13 are close to glass. Become.

  The addition amount of the ultraviolet light transmissive particles 132 is considerably large, and the refractive index of the ultraviolet light transmissive particles 132 and the ultraviolet light transmissive adhesive 131 is quite close. Therefore, the ultraviolet light emitted from the photoelectric semiconductor chip 12 Since light hardly refracts in the package 13, the light extraction efficiency of the optical semiconductor device 1 can be increased. In addition, since the ultraviolet durability of the ultraviolet light transmissive particles 132 is superior to that of the ultraviolet light transmissive adhesive 131, a large amount of the ultraviolet light transmissive particles 131 are included in the ultraviolet light transmissive adhesive 131. Even when 132 is added or when UV light is irradiated for a long period of time, the possibility of deterioration of the package 13 can be reduced and the UV durability can be improved.

  In some embodiments, the UV light transmissive adhesive 131 has a refractive index that is adjusted after blending adjustment, but the adhesive strength is reduced. For example, if the material of the ultraviolet light transmissive particles 132 is glass, the specific gravity is about 2.5, while the specific gravity of the ultraviolet light transmissive adhesive 131 is about 1. In volume, the ultraviolet light transmissive particles 132 are considerably heavier than the ultraviolet light transmissive adhesive 131. The ultraviolet light transmissive adhesive 131 has a high adhesive strength to non-organic substances, and can be adjusted by blending, for example, polydimethylsiloxane gel, phenyl silicone, condensed silicone, fluoropolymer gel, or a combination thereof. By adjusting the components in the adhesive mainly composed of the adhesive, the refractive index increases even if the viscosity of the entire ultraviolet light-transmitting adhesive 131 after adjustment is reduced. Even if the adhesive strength of the UV-transparent adhesive 131 after adjustment is reduced to, for example, a general sealing material, for example, less than an epoxy resin, the UV-transparent particles 132 having a heavy unit volume are adhered and fixed. It is enough to do. Since the refractive index of the UV-translucent adhesive 131 after adjustment is close to that of the UV-transparent particles 132 and is improved in some cases to the same level, no light refraction occurs.

  In addition, the binding energy of the main chain of the ultraviolet light transmissive adhesive 131 is determined by the material to be selected. For example, the binding energy of the main chain of the ultraviolet light-resistant adhesive 131 is 452 kJ / mol, and the ultraviolet light-resistant adhesive 131 in that case is, for example, silicone, and the main chain is, for example, Si. -O chain, silicone is, for example, methyl gel, phenyl gel, or methyl-phenyl composite gel, and the binding energy of the main chain of the UV light-transmitting adhesive 131 is 485 kJ / mol, In this case, the ultraviolet light transmissive adhesive 131 is, for example, a fluoropolymer, and the main chain is, for example, a C—F chain.

  Further, the package 13 of the present embodiment includes the ultraviolet light transmissive adhesive 131 and the plurality of ultraviolet light transmissive particles 132, but may not include the fluorescent material, or in other embodiments, the package 13. The inside may contain a fluorescent material.

  After a large amount of UV light-transmitting particles 132 are uniformly mixed in the UV light-transmitting adhesive 131 by the process technology (for example, the UV light-transmitting particles 132 are more than 50% by weight), conventional dispensing is performed. Using a process or a molding process (molding), the photoelectric semiconductor chip 12 is coated on the substrate 11 with the mixed gel, and the secondary lens is directly formed after the package 13 is cured and molded. The optical characteristics of the semiconductor device 1 are changed, and as a result, the process difficulty of the optical semiconductor device 1 of the present embodiment is reduced and the cost is relatively reduced as compared with the conventional method.

  In the Rayleigh scattering theory, the intensity of the scattered light is inversely proportional to the fourth power of the incident light wavelength. Therefore, in some embodiments, if the photoelectric semiconductor chip 12 is arranged so as to emit ultraviolet light having an emission peak value of λ nm wavelength, the plurality of ultraviolet light transmissive particles 132 of the package 13 are arranged. The particle size of the light-absorbing particles can be less than λ / 4, and even when the weight% of the plurality of ultraviolet light-transmitting particles 132 in the package 13 exceeds 50%, the light scattering effect is reduced, and The light extraction efficiency of the optical semiconductor device 1 can be improved. To further explain, in addition to the above, the difference in refractive index between the plurality of ultraviolet light transmissive particles 132 and the ultraviolet light transmissive adhesive 131 is less than 0.02, and The ultraviolet durability of the adhesive 131 is superior to that of the ultraviolet light-transmissive adhesive 131, and not only can the light extraction efficiency be further improved, but also the durability of the package 13 can be further improved.

  In some embodiments, the median particle diameter of the plurality of ultraviolet light transmissive particles 132 is less than λ / 10. The particle size of each ultraviolet light transmissive particle 132 is less than 40 nm, and all can reduce the light scattering effect and improve the light extraction efficiency.

  Please refer to FIG. 2 to FIG. 4B which are schematic views of the optical semiconductor devices 1a to 1d in different embodiments of the present invention, respectively.

  As shown in FIG. 2, the difference from the optical semiconductor device 1 of FIG. 1 is that the substrate 11a of the optical semiconductor device 1a is not a flat plate but a carrier having an accommodation space 111, and the inner edge of the accommodation space 111 is a side wall 112. And the photoelectric semiconductor chip 12 is disposed in the accommodation space 111 and is located on the substrate 11a. In some embodiments, the sidewall 112 may have a highly reflective reflective material (not shown), such as a reflective layer or reflector, such as a metal (eg, silver), an alloy, Or it can be set as the mixture of titanium dioxide (TiO2) and resin. By using the reflective material having a high reflectance and forming the side wall 112 as a surface having a high reflectance, the light use efficiency can be improved.

  The package 13 of the optical semiconductor device 1a according to the present embodiment is filled in the accommodation space 111 of the substrate 11 so as to cover and connect the photoelectric semiconductor chip 12, and is in contact with the side wall 112 to contact the side wall 112 of the substrate 11. A lens is formed by having the same height. Since the sealing material (package 13) is a gel having fluidity before being cured, the side wall 112 of the accommodation space 111 is used as a damming wall, and the sealing material is limited to the accommodation space 111, so that the photoelectric semiconductor By covering the chip 12 and curing it, a package 13 with high translucency can be formed, thereby forming a lens and changing the optical performance of the optical semiconductor device 1a.

  Further, as shown in FIG. 3, the difference from the optical semiconductor device 1a of FIG. 2 is that the package 13 of the optical semiconductor device 1b is filled in the accommodation space 111 of the substrate 11 and completely contacts the side wall 112. In addition to covering and connecting the photoelectric semiconductor chip 12, the package 13 is further formed by protruding a convex lens 133 in a direction away from the photoelectric semiconductor chip 12 in the accommodation space 111.

  As shown in FIG. 4A, the difference from the optical semiconductor device 1b in FIG. 3 is that the photoelectric semiconductor chip 12 of the optical semiconductor device 1c is a horizontal LED chip as an example. It is being glued on top. In the photoelectric semiconductor chip 12, two lead wires 151 and 152 are connected to two conductive layers 161 and 162 provided on the substrate 11, respectively.

  Further, as shown in FIG. 4A, the difference from the optical semiconductor device 1b of FIG. 3 is that the photoelectric semiconductor chip 12 of the optical semiconductor device 1d is provided on the substrate 11a by flip-chip. is there. The two electrodes 121 and 122 of the photoelectric semiconductor chip 12 are located on the same side, and the two electrodes 121 and 122 are bonded to the two conductive layers 161 and 162 of the substrate 11a through the conductive bumps P, respectively. Yes.

  4A and 4B, the photoelectric semiconductor chip 12 of the optical semiconductor device 1c is a horizontal LED chip, and the photoelectric semiconductor chip 12 of the optical semiconductor device 1d is a flip chip LED chip. In this embodiment, a horizontal LED chip or flip chip LED chip is provided on the flat substrate 11 of FIG. 1, and the package 13 is a horizontal LED chip or flip chip LED chip. The planar lens is directly formed on the upper surface of the package 13, or the convex lens is directly formed on the upper surface of the package 13. However, the present invention is not limited to this. 1 to 3 are vertical chips. In some embodiments, the horizontal chip of FIG. 4A or the flip chip of FIG. 4B is replaced with the chip of FIGS. The vertical chip in FIGS. 1 to 3 may be changed to the horizontal chip in FIG. 4A or the flip chip chip in FIG. 4B by application in the structure, but the present invention is not limited thereto.

  See also FIGS. 5A and 5B. 5A is a schematic diagram of an optical semiconductor device 1e according to still another preferred embodiment of the present invention, and FIG. 5B is a schematic diagram of electrical connection of the optical semiconductor device of FIG. 5A.

  The optical semiconductor device 1e of the present embodiment includes two photoelectric semiconductor chips 12a and 12b provided on the substrate 11 with a space therebetween, and the package 13 covers the photoelectric semiconductor chips 12a and 12b, respectively. After each convex lens is directly formed, external coating is further performed using a resin material 17 (for example, a black sealing material), and light is allowed to pass through the resin material 17 corresponding to the locations of the photoelectric semiconductor chips 12a and 12b. Each has an opening that can be used. Among these, the photoelectric semiconductor chip 12a or the photoelectric semiconductor chip 12b can be a horizontal chip or a vertical chip, but is not limited thereto. Further, the package 13 of this embodiment forms convex lenses on the photoelectric semiconductor chips 12a and 12b, respectively. However, in a different embodiment, the package 13 is on the photoelectric semiconductor chips 12a and 12b. Each may form a planar lens.

  The photoelectric semiconductor chip 12a of this embodiment can emit ultraviolet rays as an ultraviolet light emitting diode, and the photoelectric semiconductor chip 12b can output a detection signal while detecting ultraviolet rays as an ultraviolet detection chip. Among these, after the UV light emitted from the photoelectric semiconductor chip 12a is applied to the object to be measured, the reflected UV light is received by the photoelectric semiconductor chip 12b, and the detection signal output from the photoelectric semiconductor chip 12b is the processor unit 18 ( For example, the subsequent control operation can be performed after being processed by the processor IC), and for example, the illuminance or light amount of the UV light emitted from the photoelectric semiconductor chip 12a can be controlled.

  Also, in some embodiments, the optoelectronic semiconductor chips 12a, 12b and the processor unit 18 can be aligned in a single encapsulant, or the optoelectronic semiconductor chips 12a, 12b and the processor unit 18 can be independent. However, the present invention is not limited to these.

  Other technical features of the optical semiconductor devices 1a to 1d are not described separately because the same components of the optical semiconductor device 1 can be referred to.

  In summary, in the optical semiconductor device of the present invention and the package of the optical semiconductor device, the weight% of the ultraviolet light transmissive particles in the package exceeds 50%, and the plurality of ultraviolet light transmissive resistance The difference in refractive index between the particles and the ultraviolet light transmissive adhesive is less than 0.02, and the ultraviolet durability of the plurality of ultraviolet light transmissive particles is superior to the ultraviolet light transmissive adhesive, or The weight% of the plurality of ultraviolet light-transmitting particles in the package exceeds 50%, and the particle diameter of the plurality of ultraviolet light-transmitting particles is less than λ / 4. As a result, the optical semiconductor device of the present invention has advantages in that the process difficulty is reduced, the cost is reduced, the resistance to ultraviolet rays and the light extraction rate are high, as compared with the prior art.

  The above is merely an example, and the present invention is not limited thereto. Any equivalent modifications or changes made thereto without departing from the spirit and scope of the present invention shall be included in the appended claims.

  The optical semiconductor device and the optical semiconductor device package provided by the present invention are characterized by low process difficulty, low cost, UV resistance, and high light extraction efficiency.

DESCRIPTION OF SYMBOLS 1, 1a-1e Optical semiconductor device 11, 11a Substrate 111 Housing space 112 Side wall 12, 12a, 12b Photoelectric semiconductor chip 121, 122 Electrode 13 Package 131 Ultraviolet light-transmissive adhesive 132 Ultraviolet light-transmissive particle 133 Lens 14 Binder 15, 151, 152 Lead wire 161, 162 Conductive layer 17 Resin material 18 Processor unit P Conductive bump

Claims (12)

A substrate,
A photoelectric semiconductor chip provided on the substrate;
A package that covers the photoelectric semiconductor chip on the substrate, and includes an ultraviolet light transmissive adhesive and a plurality of ultraviolet light transmissive particles mixed in the ultraviolet light transmissive adhesive. A semiconductor device comprising:
The weight% of the plurality of ultraviolet light transmissive particles in the package exceeds 50%, and the difference in refractive index between the plurality of ultraviolet light transmissive particles and the ultraviolet light transmissive adhesive is 0. An optical semiconductor device, wherein the ultraviolet durability of the plurality of ultraviolet light-transmitting particles is superior to that of the ultraviolet light-transmitting adhesive. A substrate,
A photoelectric semiconductor chip provided on the substrate and arranged to emit light having an emission peak value of λ nm wavelength; and
A package that covers the photoelectric semiconductor chip on the substrate, and includes an ultraviolet light-transmissive adhesive and a plurality of ultraviolet light-transmissive particles mixed in the ultraviolet light-transmissive adhesive. A semiconductor device comprising:
The weight% of the plurality of ultraviolet light-transmitting particles in the package exceeds 50%, and the particle size of the plurality of ultraviolet light-transmitting particles is less than λ / 4. Semiconductor device.   The difference in refractive index between the plurality of UV light-transmitting particles and the UV light-transmitting adhesive is less than 0.02, and the UV durability of the plurality of UV light-transmitting particles is the UV light-transmitting particle. The optical semiconductor device according to claim 2, wherein the optical semiconductor device is superior to an optical adhesive.   4. The optical semiconductor device according to claim 2, wherein a median value of the particle diameters of the plurality of ultraviolet light transmissive particles is less than λ / 10. 5.   4. The optical semiconductor device according to claim 1, wherein the particle size of each ultraviolet light-transmitting particle is less than 40 nm. The material of the ultraviolet light-resistant adhesive is a silicone or a fluorine polymer gel, and the silicone is a methyl gel, a phenyl gel, or a methyl / phenyl composite gel,
The ultraviolet light transmissive particles are quartz glass particles, borosilicate glass particles, or a combination thereof.
4. The weight% of the plurality of ultraviolet light-transmitting particles in the package is 70% or more, and the light transmittance of the ultraviolet light-transmitting particles is 90% or more. 5. The optical semiconductor device according to any one of the above.   The optical semiconductor device according to claim 6, wherein the photoelectric semiconductor chip is an ultraviolet light emitting diode.   The substrate has an accommodation space, the photoelectric semiconductor chip is provided in the accommodation space, and the package is filled in the accommodation space and covers and connects the photoelectric semiconductor chip. The optical semiconductor device according to claim 1, wherein:   The optical semiconductor device according to claim 8, wherein the package protrudes from the housing space and forms a lens. A semiconductor device comprising: an ultraviolet-resistant translucent adhesive; and a package including a plurality of ultra-violet translucent particles mixed in the ultra-violet translucent adhesive,
The weight% of the plurality of ultraviolet light transmissive particles in the package exceeds 50%, and the difference in refractive index between the plurality of ultraviolet light transmissive particles and the ultraviolet light transmissive adhesive is 0. The package of an optical semiconductor device, wherein the ultraviolet durability of the plurality of ultraviolet translucent particles is less than that of the ultraviolet translucent adhesive.   The ultraviolet light-resistant adhesive is made of silicone or fluorine polymer gel, and the silicone is methyl gel, phenyl gel, or methyl-phenyl composite gel, and the ultraviolet light-resistant particles are made of quartz glass. Particles, borosilicate glass particles, or a combination thereof, and the weight% of the plurality of UV light-transmitting particles in the package is 70% or more, and the light transmittance of the UV light-transmitting particles is 90%. It is the above, The package of the optical semiconductor device of Claim 10 characterized by the above-mentioned.   The optical semiconductor device according to any one of claims 10 to 11, wherein the particle size of each ultraviolet light-transmitting particle is less than 40 nm.

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