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JP2018148016A - 発光ダイオードチップの製造方法及び発光ダイオードチップ - Google Patents

発光ダイオードチップの製造方法及び発光ダイオードチップ Download PDF

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Publication number
JP2018148016A
JP2018148016A JP2017041315A JP2017041315A JP2018148016A JP 2018148016 A JP2018148016 A JP 2018148016A JP 2017041315 A JP2017041315 A JP 2017041315A JP 2017041315 A JP2017041315 A JP 2017041315A JP 2018148016 A JP2018148016 A JP 2018148016A
Authority
JP
Japan
Prior art keywords
transparent substrate
transparent
emitting diode
wafer
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017041315A
Other languages
English (en)
Japanese (ja)
Inventor
卓 岡村
Taku Okamura
卓 岡村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Abrasive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Abrasive Systems Ltd filed Critical Disco Abrasive Systems Ltd
Priority to JP2017041315A priority Critical patent/JP2018148016A/ja
Priority to TW107104141A priority patent/TWI789375B/zh
Priority to KR1020180023657A priority patent/KR102315305B1/ko
Priority to CN201810171673.1A priority patent/CN108538995A/zh
Publication of JP2018148016A publication Critical patent/JP2018148016A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H10P54/00—
    • H10W10/00—
    • H10W10/01—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means

Landscapes

  • Engineering & Computer Science (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Laser Beam Processing (AREA)
JP2017041315A 2017-03-06 2017-03-06 発光ダイオードチップの製造方法及び発光ダイオードチップ Pending JP2018148016A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017041315A JP2018148016A (ja) 2017-03-06 2017-03-06 発光ダイオードチップの製造方法及び発光ダイオードチップ
TW107104141A TWI789375B (zh) 2017-03-06 2018-02-06 發光二極體晶片的製造方法
KR1020180023657A KR102315305B1 (ko) 2017-03-06 2018-02-27 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
CN201810171673.1A CN108538995A (zh) 2017-03-06 2018-03-01 发光二极管芯片的制造方法和发光二极管芯片

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017041315A JP2018148016A (ja) 2017-03-06 2017-03-06 発光ダイオードチップの製造方法及び発光ダイオードチップ

Publications (1)

Publication Number Publication Date
JP2018148016A true JP2018148016A (ja) 2018-09-20

Family

ID=63485903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017041315A Pending JP2018148016A (ja) 2017-03-06 2017-03-06 発光ダイオードチップの製造方法及び発光ダイオードチップ

Country Status (4)

Country Link
JP (1) JP2018148016A (zh)
KR (1) KR102315305B1 (zh)
CN (1) CN108538995A (zh)
TW (1) TWI789375B (zh)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005093728A (ja) * 2003-09-17 2005-04-07 Toyoda Gosei Co Ltd 発光装置
JP2012099788A (ja) * 2010-11-01 2012-05-24 Samsung Led Co Ltd 半導体発光素子
WO2013114480A1 (ja) * 2012-02-01 2013-08-08 パナソニック株式会社 半導体発光素子、その製造方法及び光源装置
US20140159090A1 (en) * 2012-12-07 2014-06-12 Epistar Corporation light emitting device
JP2014239123A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法
JP2015018953A (ja) * 2013-07-11 2015-01-29 株式会社ディスコ 発光チップ
KR20150062194A (ko) * 2013-11-28 2015-06-08 순천대학교 산학협력단 측면 발광 다이오드 및 그 제조 방법
JP2016521463A (ja) * 2013-05-15 2016-07-21 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 基板内に散乱機構を有するｌｅｄ
KR101662751B1 (ko) * 2015-07-02 2016-10-07 참엔지니어링(주) 기판 처리 장치 및 이를 이용한 기판 처리 방법과 이로 제작된 기판

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4122739B2 (ja) * 2001-07-26 2008-07-23 松下電工株式会社 発光素子及びその製造方法
KR20070000952A (ko) * 2005-06-27 2007-01-03 주식회사 엘지화학 열방출이 개선된 전면발광형 발광다이오드 소자의 제조방법
JP5495876B2 (ja) * 2010-03-23 2014-05-21 株式会社ディスコ 光デバイスウエーハの加工方法
JP2014039006A (ja) * 2012-02-27 2014-02-27 Mitsubishi Chemicals Corp 波長変換部材及びこれを用いた半導体発光装置
JP5941306B2 (ja) * 2012-03-19 2016-06-29 スタンレー電気株式会社 発光装置およびその製造方法
JP2014175362A (ja) * 2013-03-06 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
JP2014175354A (ja) 2013-03-06 2014-09-22 Disco Abrasive Syst Ltd 発光ダイオード
TWI513051B (zh) * 2013-05-08 2015-12-11 Ind Tech Res Inst 發光二極體晶圓及其製造方法
TWI593139B (zh) * 2013-08-30 2017-07-21 旭化成電子材料股份有限公司 Semiconductor light-emitting element and optical film
KR20150047844A (ko) * 2013-10-25 2015-05-06 주식회사 세미콘라이트 반도체 발광다이오드
JP6255235B2 (ja) * 2013-12-20 2017-12-27 株式会社ディスコ 発光チップ
KR20150092213A (ko) * 2013-12-26 2015-08-12 신에쯔 세끼에이 가부시키가이샤 파장 변환용 석영 유리 부재 및 그 제조 방법
JP6255255B2 (ja) 2014-01-27 2017-12-27 株式会社ディスコ 光デバイスの加工方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005093728A (ja) * 2003-09-17 2005-04-07 Toyoda Gosei Co Ltd 発光装置
JP2012099788A (ja) * 2010-11-01 2012-05-24 Samsung Led Co Ltd 半導体発光素子
WO2013114480A1 (ja) * 2012-02-01 2013-08-08 パナソニック株式会社 半導体発光素子、その製造方法及び光源装置
US20140159090A1 (en) * 2012-12-07 2014-06-12 Epistar Corporation light emitting device
JP2016521463A (ja) * 2013-05-15 2016-07-21 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 基板内に散乱機構を有するｌｅｄ
JP2014239123A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法
JP2015018953A (ja) * 2013-07-11 2015-01-29 株式会社ディスコ 発光チップ
KR20150062194A (ko) * 2013-11-28 2015-06-08 순천대학교 산학협력단 측면 발광 다이오드 및 그 제조 방법
KR101662751B1 (ko) * 2015-07-02 2016-10-07 참엔지니어링(주) 기판 처리 장치 및 이를 이용한 기판 처리 방법과 이로 제작된 기판

Also Published As

Publication number Publication date
CN108538995A (zh) 2018-09-14
TWI789375B (zh) 2023-01-11
KR102315305B1 (ko) 2021-10-19
KR20180102010A (ko) 2018-09-14
TW201838000A (zh) 2018-10-16

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