JP2018148075A - Semiconductor light emitting device and method for manufacturing semiconductor light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress a bias of emitted light and a variation in chromaticity by improving the mounting accuracy of an optical conversion member, and to improve the manufacturing yield. A light emitting element, a back surface electrode provided on the lower surface of the light emitting element, a first phosphor layer provided on the upper surface of the light emitting element, and the light emitting element and the first phosphor layer. Provided is a semiconductor light emitting device including a light control member that covers a side surface, and the lower surface of the light emitting element and at least the lower surface of the back surface electrode are exposed without being covered by the light control member. [Selection diagram] Fig. 1

Description

  The present invention relates to a semiconductor light emitting device that converts light emitted from a light emitting element with a wavelength conversion member and emits light of a desired wavelength, and a method for manufacturing the semiconductor light emitting device.

  2. Description of the Related Art A semiconductor light emitting device that emits light by converting a part of light from a light emitting element into light having a desired wavelength by a wavelength conversion member is known. As an example of such a semiconductor light emitting device, for example, Patent Document 1 discloses a light emitting device including a light emitting element, a light conversion member that converts the wavelength of light from the light emitting element, and a covering member that includes a light reflective material. It is disclosed. In the light emitting device of Patent Document 1, the light conversion member has a light emitting surface exposed to the outside and a side surface continuous from the light emitting surface, and the covering member covers the side surface of the light converting member. Is used as the light emission region in the light emitting device to improve the front luminance. Further, in Patent Document 2, a wavelength conversion member and a translucent member are sequentially arranged on the upper surface of a light emitting element provided on a substrate via a conductive member, and from the side surface of the light emitting element to the peripheral lower surface of the wavelength conversion member. A semiconductor light emitting device is disclosed in which a side light guide member is provided and a light reflecting member is disposed on each side of at least the wavelength conversion member, the translucent member, and the side light guide member.

Japanese Patent No. 5526782 JP-A-2006-72515

  However, a conventional semiconductor light emitting device such as the semiconductor light emitting devices disclosed in Patent Document 1 and Patent Document 2 described above has a light emitting element mounted on a mounting substrate, a light conversion member thereon, and a light reflective property on a side surface. Manufactured by sequentially mounting components. For this reason, when mounting a light conversion member etc. especially at the time of manufacture, there exists a possibility that a mounting position may shift | deviate. When the mounting position of the light conversion member or the like is shifted, the light emitted from the semiconductor light emitting device is biased and the chromaticity varies. Semiconductor light-emitting devices with varying chromaticity are ranked according to the target chromaticity in the inspection device. However, semiconductor light-emitting devices that deviate from the target chromaticity cannot be shipped, and the manufacturing yield decreases. Resulting in.

  The present invention has been made in view of the above circumstances, and by improving the mounting accuracy of the light conversion member, it is possible to suppress the deviation of the emitted light and the variation in chromaticity, thereby improving the manufacturing yield. With the goal.

One embodiment of the present invention is a light-emitting element, a back electrode provided on a lower surface of the light-emitting element, a first phosphor layer provided on an upper surface of the light-emitting element, the light-emitting element, and the first fluorescence. And a light control member that covers a side surface of the body layer, and at least a lower surface of the light emitting element and at least a lower surface of the back electrode are exposed without being covered by the light control member.
The semiconductor light emitting device configured as described above is manufactured as follows.
A release jig having a rectangular recess is used, a first phosphor layer is fitted on the bottom surface of the release jig, and the upper surface of the light emitting element and the first phosphor are placed on the first phosphor layer. The light-emitting element is mounted so that the layer is in contact, the first phosphor layer and the light-emitting element are joined, and a light control member is provided as the concave portion, the side surface of the first phosphor layer, and the light emission. It is applied and formed between the side surface of the element and the concave portion and cured.
Since the semiconductor light emitting device manufactured in this way can suppress the mounting position shift when mounting the light conversion member, it suppresses the deviation of the emitted light and the variation in chromaticity, and thus the manufacturing yield. Can be improved.

  According to the present invention, by improving the mounting accuracy of the light conversion member, it is possible to suppress the deviation of the emitted light and the variation in chromaticity, thereby improving the manufacturing yield.

It is sectional drawing which shows schematic structure of the semiconductor light-emitting device concerning the 1st Embodiment of this invention. It is sectional drawing which shows schematic structure of the semiconductor light-emitting device which concerns on the modification of the 1st Embodiment of this invention. It is sectional drawing which shows schematic structure of the semiconductor light-emitting device which concerns on the modification of the 1st Embodiment of this invention. It is sectional drawing which shows schematic structure of the semiconductor light-emitting device concerning the 2nd Embodiment of this invention. (A)-(f) is sectional drawing which shows the process which concerns on the manufacturing method of the semiconductor light-emitting device concerning the 2nd Embodiment of this invention. It is sectional drawing which shows schematic structure of the semiconductor light-emitting device which concerns on the modification 1 of the 2nd Embodiment of this invention. (A)-(d) is sectional drawing which shows the process in the case of mounting the semiconductor light-emitting device which concerns on the modification 1 of the 2nd Embodiment of this invention. It is sectional drawing which shows schematic structure of the semiconductor light-emitting device which concerns on the modification 2 of the 2nd Embodiment of this invention. (A)-(f) is sectional drawing which shows the process which concerns on the manufacturing method of the semiconductor light-emitting device which concerns on the modification 2 of the 2nd Embodiment of this invention. (A) And (b) is sectional drawing explaining the modification of the manufacturing method of the semiconductor light-emitting device which concerns on each embodiment of this invention.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings shown below, hatching is appropriately omitted even in a cross-sectional view for easy understanding and improved visibility. In the following description, the same components are denoted by the same reference numerals, and the description thereof is omitted.

(First embodiment)
A semiconductor light emitting device according to a first embodiment of the present invention will be described.
As shown in FIG. 1, the semiconductor light emitting device 10 according to this embodiment includes a light emitting element 11 provided with a back electrode 11b, a first phosphor layer 12 provided on the upper surface of the light emitting element 11, and a first fluorescent light. A light transmissive substrate 13 provided on the upper surface of the body layer, the second phosphor layer 14 covering the side surfaces of the light emitting element 11 and the first phosphor layer 12, and a light reflecting member (light) covering the second phosphor layer. Control member) 15.

  As the light emitting element 11, a flip chip type semiconductor light emitting element having a light emitting surface for emitting light from the light emitting layer 11a on the upper surface and side surfaces is applied. The pair of element electrodes (back surface electrodes) 11b formed on the lower surface of the light emitting element 11 is not covered with the light reflecting member 14, and everything except the portion in contact with the rear surface of the light emitting element 11 is exposed to the outside. ing.

  The first phosphor layer 12 is disposed on the upper surface of the light emitting element 11 and has the same size as the light emitting element 11. The light transmissive substrate 13 has a rectangular shape slightly larger than the first phosphor layer 12 and is disposed on the upper surface of the first phosphor layer. The second phosphor layer 14 is provided so as to cover the side surfaces of the light emitting element 11 and the first phosphor layer 12 and the peripheral edge exposed from the first phosphor layer 12 on the lower surface of the light-transmitting substrate 13. ing. The side surface of the second phosphor layer 14 is an inclined surface connecting the side surface of the light emitting element 11 and the lower end of the side surface of the light transmissive substrate 13. The light reflecting member 15 is provided so as to cover the side surface of the light transmissive substrate 13 and the side surface of the second phosphor layer 14.

As shown in FIG. 2, the light reflecting member 15 may not be provided. With such a structure, side light can also be used, so that the spread of light emission is increased, and lighting efficiency can be improved by mounting the base on a white substrate. The semiconductor light emitting device as shown in FIG. 2 is mainly suitable for general lighting, a chip on board (COB) light source, an LED bulb, and the like. Further, when mounting the semiconductor light emitting device, close mounting is possible, so that dark lines in the gap can be made inconspicuous.
Moreover, as shown in FIG. 3, it can also be set as the structure which does not provide the transparent substrate 13 and the 2nd fluorescent substance layer 14. As shown in FIG. With such a structure, the light source size close to the light emitting element size can be obtained (chip size package: CSP), and the front luminance of the semiconductor light emitting device can be improved. A semiconductor light-emitting device with improved front luminance can be applied to, for example, a headlamp or a DRL.

(Second Embodiment)
As shown in FIG. 4, in the semiconductor light emitting device according to the second embodiment, a plurality of via electrodes (not shown) penetrating the light emitting layer 11a are arranged in the light emitting element 11, and the light from the light emitting layer 11a is emitted. A flip chip type semiconductor light emitting device having light emitting surfaces to be formed on the upper surface and side surfaces is applied. By applying such a semiconductor light emitting element, the non-light emitting portion is small, current diffusion efficiency is good, and the back electrode pattern is stepped as compared with the case where the flip chip type light emitting element in the first embodiment is applied. Can be arranged symmetrically. For this reason, an Au bump bonding method is not required, and more inexpensive mounting such as eutectic bonding is possible. In addition, since the step of the PN junction is small as compared with the semiconductor light emitting device according to the first embodiment, the second phosphor layer 14 can be arranged with higher accuracy.

  On the upper surface of the light emitting element 11, a first phosphor layer 12 having the same size as the light emitting element 11 and a rectangular light-transmitting substrate 13 that is slightly larger than the first phosphor layer 12 are disposed in order. A second phosphor layer 14 is provided so as to cover the peripheral surfaces exposed from the first phosphor layer 12 on the side surfaces of the element 11 and the first phosphor layer 12 and the lower surface of the light-transmitting substrate 13. A light reflecting member (light control member) 15 is provided so as to cover the side surface of the light-transmitting substrate 13 and the side surface of the second phosphor layer 14.

Next, a method for manufacturing the semiconductor light emitting device 10 configured as described above and shown in FIG. 4 will be described.
In a conventional manufacturing process of a semiconductor light emitting device, a wavelength conversion layer (phosphor layer) and a light reflecting member are generally arranged after mounting a light emitting element on a mounting substrate. On the other hand, the semiconductor light emitting device 10 according to this embodiment is manufactured without mounting the light emitting element on the mounting substrate. For this reason, there exists an advantage that the back surface electrode provided in the light emitting element can be exposed.

Hereinafter, a specific manufacturing method will be described with reference to FIG.
FIG. 5A is a cross-sectional view of a release tool 20 that is rectangular when viewed from above and has a plurality of first recesses 21 that are large enough to accommodate the semiconductor light emitting device 10. The release tool is formed by forming a plurality of rectangular first recesses 21 corresponding to the number of semiconductor light emitting devices in a matrix, and the bottom surface of the first recess 21 has a light transmitting substrate 13. A second recess 22 having a size substantially equal to the size and shallower than the thickness of the light-transmitting substrate 13 is formed, and a suction hole 23 for vacuum suction is formed at the center of the second recess 22.

  As shown in FIG. 5B, a light transmitting substrate 13 that has been processed in advance to a predetermined size, and the first recess 12 is formed by forming the first phosphor layer 12 at the center of the light transmitting substrate 13. Arranged at the center position of the bottom surface of 21, that is, fitted into the second recess 22, and vacuum suctioned through the suction hole 23.

  The first phosphor layer 12 can be formed, for example, by thermocompression bonding a sheet-like material in which the phosphor is dispersed in a semi-curable resin to the light-transmitting substrate 13. Since the second recess 22 is formed to be approximately the same size as the light transmissive substrate 13, when the light transmissive substrate 13 is mounted by fitting the light transmissive substrate 13 into the second recess 22. Since the positional deviation does not occur, the positional deviation of the first phosphor layer 14 stacked thereafter with respect to the light transmissive substrate 13 can also be suppressed.

Next, as shown in FIG. 5C, the light-emitting element 11 is mounted on the first phosphor layer 12 with the upper surface (light-emitting surface: for example, sapphire transparent substrate side) facing down, and thermocompression-bonded. By doing so, the members are joined.
As shown in FIG. 5D, the uncured second phosphor layer 14 is formed by combining the exposed surface of the light-transmitting substrate 13, the side surface of the first phosphor layer 12, and the side surface of the light emitting element 11. As a cover, it is formed from a gap between the first recesses 21 with a dispensing device or the like to form a light chain in a fillet shape and is thermoset. The second phosphor layer 14 converts the wavelength of the light from the side surface of the light emitting element 11 and guides the light to the light transmissive substrate 13 by the inclination due to the fillet shape. The phosphor concentration of the second phosphor layer 14 is adjusted to be lower than the phosphor concentration of the first phosphor layer 12.

  In the conventional semiconductor light emitting device, since the phosphor layer and the light transmissive substrate are stacked and sequentially arranged on the upper surface of the light emitting element, the light transmissive substrate larger than the size of the light emitting element interferes with the second phosphor layer. It becomes difficult to form. On the other hand, according to the manufacturing method of the semiconductor light emitting device according to the present embodiment, the second phosphor layer 14 is applied because the stacking order is reversed, that is, the layers are stacked from the light transmissive substrate 13. Therefore, the second phosphor layer 14 can be stably formed.

  Subsequently, as shown in FIG. 5 (e), a light reflecting member 15, for example, a mixture of silicone resin and titanium oxide is applied and formed in the gap between the first recesses 21 with a dispensing device or the like, and is thermally cured. At this time, the depth of the first recess 21 is set to a height at which the back electrode 11b provided on the back surface of the light emitting element 11 (upper side in FIG. 5) is exposed from the top surface of the first recess 21. Therefore, the light reflecting member 15 controls the height of the liquid surface by the surface tension while covering the side surface of the light transmissive substrate 13 and the side surface of the second phosphor layer 14, so that the back surface electrode 11 b of the light emitting element 11 is formed. The included light emitting element can be exposed from the light reflecting member 15.

  Next, as shown in FIG. 5F, the individual semiconductor light emitting devices are removed from the mold release jig after the light reflecting member 15 is thermally cured. At this time, the semiconductor light emitting device can be easily released by pushing up from the suction hole 23 provided at the center of the second recess 22 of the jig with a push-up pin. As the release jig, for example, a mold subjected to a release coating treatment, a Teflon (registered trademark) molded product, a heat-resistant thermoplastic resin molded product subjected to a fluorine coating treatment, or the like can be appropriately used.

  The plurality of separated semiconductor light emitting devices can be mounted on the substrate in a state where the back electrode 11b of the light emitting element 11 is exposed to the outside and completed as a semiconductor light emitting device. That is, it can be reduced in size as compared with a conventional semiconductor light emitting device, and can be manufactured without using a mounting substrate because a mold release tool is used. The light-transmitting substrate and the first phosphor layer can be manufactured. Since the mounting position shift of the (light converting member) can be suppressed, the deviation of light emitted from the semiconductor light emitting device and the variation in chromaticity can be suppressed. In addition, since the semiconductor light emitting devices are individually manufactured, a dicing process is not necessary, and yield can be improved and costs can be reduced. Furthermore, there is also an advantage that the light emitting state of the semiconductor light emitting device can be confirmed through the suction holes 23 in the manufacturing process.

(Modification 1 of 2nd Embodiment)
As shown in FIG. 6, the light reflecting member 15 may not be provided. With such a structure, side light can also be used, so that the spread of light emission is increased, and lighting efficiency can be improved by mounting the base on a white substrate. Such a semiconductor light-emitting device is mainly suitable for general illumination, a chip on board (COB) light source, an LED bulb, and the like. Further, when mounting the semiconductor light emitting device, close mounting is possible, so that dark lines in the gap can be made inconspicuous.

The semiconductor light emitting device 10 of FIG. 6 without the light reflecting member (light control member) 15 is a process of FIGS. 5A to 5D which is a manufacturing process of the semiconductor light emitting device according to the second embodiment. Can be manufactured according to. Hereinafter, a mounting example of the semiconductor light emitting device of FIG. 6 will be described with reference to FIG.
In FIG. 7A, a circuit board 40 that has been multilayered in advance is prepared as a mounting board, and semiconductor light emitting devices are mounted at predetermined intervals on a predetermined electrode pattern on the mounting surface of the circuit board 40.
In the semiconductor light emitting device of FIG. 6, since the outer size is defined by the recess of the release jig, a highly accurate outer dimension can be realized by processing the recess pattern with high dimensional accuracy. For this reason, the gap between adjacent semiconductor light emitting devices can be suppressed to 50 μm or less.
Since the conventional semiconductor light emitting device depends on the dicing process in terms of the outer size, the gap between the semiconductor light emitting devices cannot be suppressed to 100 μm or less due to the influence of the pitch tolerance and the cutting width tolerance of the dicing apparatus.

  Next, as shown in FIG. 7 (b), the dam frame 41 for pouring the light reflecting member into the gap is coated and formed by a dispensing device (not shown). A matrix light source unit in which the upper surface of the light-transmitting substrate 13 is exposed by filling and curing the light reflecting member 15 (white resin) filling the inside of the dam frame 41 and the side surface of the semiconductor light emitting device (FIG. 7C). Is obtained (FIG. 7D).

In the example of FIG. 7, an example of a 3 × 3 light source unit is shown, but the number of arrays is not limited to this, and is appropriately selected according to the optical system to be applied. For example, in the case of a vehicle headlamp (headlamp), a 1 × 4 to 5 array, in the case of a daytime running lamp (white DRL), 2 × 2, in the case of a DRL and turn lamp light source (white and orange) In the case of 3 × 3 (white 4 and orange 5) and adaptive driving beam (ADB), 5 × 20 or the like can be arranged.
Moreover, as shown in FIG. 8, it can also be set as the structure which does not provide the transparent substrate 13 and the 2nd fluorescent substance layer 14. As shown in FIG. With such a structure, the light source size close to the light emitting element size can be obtained (chip size package: CSP), and the front luminance of the semiconductor light emitting device can be improved. A semiconductor light-emitting device with improved front luminance can be applied to, for example, a headlamp or a DRL.

(Modification 2 of the second embodiment)
Hereinafter, a method for manufacturing the semiconductor light emitting device without the light transmissive substrate shown in FIG. 8 will be described with reference to FIG.
FIG. 9A is a cross-sectional view of the release tool 20 in which a plurality of first recesses 21 having a rectangular shape that can be accommodated as viewed from above are formed. The second recess 22 is formed with a second recess 22 having a size substantially equal to the size of the first phosphor layer 12 and shallower than the thickness of the first phosphor layer 12. A suction hole 23 for vacuum suction is formed at the center.

  FIG. 9B shows a state in which the phosphor layer is arranged in the second recess 22 formed on the bottom surface of the first recess 21 and vacuum-adsorbed through the suction hole 23. For example, a phosphor ceramic plate can be used as the first phosphor layer 12. A predetermined amount of adhesive 16 is applied to the upper surface of the first phosphor layer 12 (FIG. 9C). As the adhesive 16, a transparent material having heat resistance and light resistance (for example, silicone resin, fluororesin, sol-gel inorganic binder, etc.) can be used.

  Next, as shown in FIG. 9 (d), the flip chip type light emitting element 11 is mounted on the first phosphor layer 12 with the upper surface (sapphire transparent substrate side) facing down, and the adhesive is heated and cured. Let The light reflecting member 15 is applied and formed in the gap between the first recesses 21 and thermally cured (FIG. 9E). After the light reflecting member 15 is thermally cured, the individual semiconductor light emitting devices are removed from the release jig 20 (FIG. 9F).

  Since the semiconductor light emitting device manufactured in this way is not provided with the light transmissive substrate 13 and the second phosphor layer 14, the semiconductor light emitting device can be further reduced in size. Further, like the semiconductor light emitting device according to the first embodiment described above, a mounting substrate is not used, so that a dicing process is not required, and the yield is improved and the cost is reduced.

(Modification of manufacturing method of semiconductor light emitting device)
In the semiconductor light emitting device manufacturing method described above, the chromaticity variation can be further reduced by the following.
FIG. 10A shows a process of selecting the first phosphor layer 12 in each embodiment described above. As shown in FIG. 10 (a), each chromaticity rank (from blue eyes to yellow eyes in the case of a blue wavelength-excited yellow wavelength conversion layer (for example, correlated color temperature) = The range of about 6500K to 4000K)), and the trays 30 that are classified and stored for each chromaticity rank are prepared.

  FIG. 10B shows a process of selecting the light emitting element 11. In FIG. 10B, a tray in which the light emitting elements 11 are classified and stored for each dominant wavelength by a chip sorting device (not shown) is prepared in advance.

In order to adapt to the manufacturing method of the semiconductor light emitting device described above, the combination of the chromaticity rank of the first phosphor layer 12 and the dominant wavelength rank of the light emitting element 11 depends on the excitation wavelength characteristic of the wavelength conversion member such as the phosphor. Determine the combination. The chromaticity of the final semiconductor light emitting device manufactured according to this combination is known to fall within the same range, and the chromaticity yield can be significantly improved by managing the number of each classification.
In addition, in the conventional manufacturing process, it is the limit to collectively manufacture the light emitting elements whose dominant wavelengths are classified into the 2.5 nm range, and it is possible to suppress variations in chromaticity in combination with variations in phosphor layers. It was difficult.

The semiconductor light emitting device according to each of the above-described embodiments and modifications thereof is an example, and each configuration applied to the semiconductor light emitting device can be appropriately changed as follows.
In the above example, a light reflecting member such as a white reflecting member in which titanium oxide is mixed with titanium oxide is shown as the light controlling member. However, instead of the light reflecting member, a light controlling member such as a light transmissive transparent resin is applied. Thus, it is possible to provide a semiconductor light emitting device capable of side light emission. Further, by applying a third phosphor layer having a wavelength conversion function as the light control member, it can be applied to chromaticity adjustment in the final process when manufacturing the semiconductor light emitting device.

  Examples of the above-mentioned release jigs include, for example, molds that have been mold-coated, Teflon (registered trademark) molded products, and heat-resistant thermoplastic resin molded products that have been fluorine-coated, A transparent member (for example, hard glass, transparent silicone resin, transparent fluororesin) can be used. By using the transparent member, after the first phosphor layer 12 or the second phosphor layer 14 is disposed, the back surface electrode 11b of the light emitting element 11 is turned on and turned on, and from the transparent lower surface side of the release jig. Since luminescence can be measured and chromaticity adjustment (application amount control) can be performed, target chromaticity control can be performed with higher accuracy. Moreover, although the mold release jig demonstrated the example which has the 1st recessed part 21 and the 2nd recessed part, it is not necessary to form a 2nd recessed part.

  Moreover, although the flip chip type | mold element which grew the semiconductor layer on the sapphire transparent substrate was shown as the light emitting element 11, an anode electrode and a cathode electrode can be arrange | positioned from a back surface, such as a SiC growth substrate and a GaN growth substrate, others. A light-emitting element can also be used.

  As described above, according to the semiconductor light emitting device according to each of the embodiments and the modifications described above, by improving the mounting accuracy of the light conversion member, it is possible to suppress the unevenness of light to be irradiated and the variation in chromaticity, and to extend. The production yield can be improved. The semiconductor light emitting devices according to the above-described embodiments and modifications thereof can be applied to vehicle lamps such as DRL and ADB.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor light-emitting device, 11 ... Light emitting element, 11a ... Light emitting layer, 11b ... Back electrode, 12 ... 1st fluorescent substance layer, 13 ... Light transmissive member, 14 ... 2nd fluorescent substance layer, 15 ... Light reflecting member, 16 ... Adhesive, 20 ... Release tool, 21 ... 1st recessed part, 22 ... 2nd recessed part , 23 ... Adsorption holes, 40 ... Circuit board, 41 ... Dam frame

Claims (10)

A light emitting element;
A back electrode provided on the lower surface of the light emitting element;
A first phosphor layer provided on an upper surface of the light emitting element;
A light control member covering a side surface of the light emitting element and the first phosphor layer,
A semiconductor light emitting device in which a lower surface of the light emitting element and at least a lower surface of the back electrode are exposed without being covered with the light control member.   The semiconductor light-emitting device according to claim 1, further comprising a light-transmitting substrate provided on an upper surface of the first phosphor layer.   3. The semiconductor light emitting device according to claim 1, further comprising a second phosphor layer provided between a side surface of the light emitting element and the first phosphor layer and the light control member.   The semiconductor light emitting device according to claim 1, wherein the light control member is a light reflecting member.   The semiconductor light emitting device according to claim 1, wherein the light control member is a light transmissive member.   The semiconductor light emitting device according to claim 1, wherein the light control member is a third phosphor layer.   The semiconductor light emitting device according to any one of claims 1 to 6, wherein a portion of the back electrode protruding from the lower surface of the light emitting element is exposed. Using a mold release tool having a rectangular recess,
The first phosphor layer is fitted on the bottom surface of the release jig,
The light emitting element is mounted on the first phosphor layer so that the upper surface of the light emitting element is in contact with the first phosphor layer, and the first phosphor layer and the light emitting element are bonded. And
A method of manufacturing a semiconductor light-emitting device, in which a light control member is applied and formed between the recess and the side surface of the first phosphor layer, and the side surface of the light-emitting element and the recess. In place of the first phosphor layer,
9. The method of manufacturing a semiconductor light emitting device according to claim 8, wherein a synthetic sheet in which a light transmitting substrate and a first phosphor layer are bonded in advance is fitted.   10. The method of manufacturing a semiconductor light emitting device according to claim 8, wherein the first phosphor layer is vacuum-adsorbed from an adsorption hole provided in a bottom surface of a concave portion of the mold release jig.

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