JP2018146526A - Device and method for inspecting circuit boards - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve inspection efficiency while simplifying the configuration. SOLUTION: A probing mechanism 12a, 12b for probing the probe 21 to a probing point of a surface 101 of a substrate 100 by controlling a probe 21 is moved, and an attachment error of the probe 21 and a position of the substrate 100 are controlled. A processing unit 17 that executes a correction process that corrects the theoretical coordinates of the probing point with a correction amount corresponding to the amount of deviation, and the processing unit 17 controls the probing mechanisms 12a and 12b to control the surface 101 of the substrate 100. A moving process of moving the probe 21 above the region including the theoretical coordinates of the designated conductor formed on the surface 101 in the state where the probe 21 is in close proximity to the probe 21 is performed, and the electrostatic capacitance measured during the moving process is performed. The actual coordinates of the specified conductor specified based on the change in the capacitance Cm and the theory of the specified conductor It identifies the positional deviation between the coordinates as a correction amount to perform the correction process. [Selection diagram] Figure 1

Description

  The present invention relates to a substrate inspection apparatus and a substrate inspection method for inspecting a substrate using a measured amount measured based on an electric signal input / output through a probe probed on the substrate.

  In a substrate inspection apparatus that inspects a substrate using a measured amount measured based on an electric signal input / output via a probe probed on the substrate, in order to probe the probe accurately (reliably) to the probing point, A process is performed in which the attachment error when the probe is attached to the probing mechanism or the amount of displacement when the substrate is held by the holding unit is specified as a correction value, and the coordinates of the probing point on the substrate are corrected with the correction value. .

  An XY circuit board inspection apparatus (hereinafter also referred to as a “first board inspection apparatus”) disclosed by the applicant in Patent Document 1 below is known as a board inspection apparatus for specifying a probe attachment error. In the first board inspection apparatus, first, the camera is moved above the mark provided on the board to image the mark, and then the camera mounting error is measured from the image. Subsequently, a dent sheet is placed on the board, and the probe is moved toward a specific point (predetermined coordinates) on the dent sheet to perform probing. Next, the camera is moved above the specific point while adjusting the amount of camera movement by the amount of the camera attachment error described above, and then the dent produced on the dent sheet by probing is imaged by the camera. Subsequently, the coordinates of the dent are specified from the image obtained by imaging the dent, and the difference value between the coordinates of the dent and the theoretical coordinates of the specific point is specified as a probe attachment error.

  Further, as a substrate inspection apparatus for specifying the amount of positional deviation of a substrate, a substrate inspection apparatus disclosed by the applicant in the following Patent Document 2 (hereinafter also referred to as “second substrate inspection apparatus”) is known. In the second substrate inspection apparatus, first, a substrate to be inspected is fixed to the apparatus main body, and then a camera is disposed above the fiducial mark provided on the substrate. Subsequently, the fiducial mark is imaged by the camera, and the coordinates of the fiducial mark are specified from the image. Next, the difference between the theoretical coordinates of the fiducial mark and the fiducial mark coordinates specified from the image when the substrate is fixed at the specified position (correct position) of the device body is specified as the amount of positional deviation of the substrate. To do.

JP-A-6-331653 (page 3, Fig. 1-3) JP 2010-160006 (page 4-6, FIG. 1)

  However, the above-described first substrate inspection device and second substrate inspection device (conventional substrate inspection device) have the following problems to be improved. Specifically, in the first substrate inspection apparatus, a dent formed by probing the probe on the dent sheet is imaged by a camera, and the coordinates of the dent specified from the image and the theoretical coordinates of the specific point are Is specified as a probe mounting error. As described above, in the first board inspection apparatus, it is necessary to provide a dent sheet, a camera, and an illumination for imaging in order to specify an attachment error of the probe, so that the configuration becomes complicated and the cost increases. Thus, since the process of specifying the probe attachment error is complicated, there is a problem that it is difficult to improve the inspection efficiency. Further, in the second substrate inspection apparatus, the fiducial mark provided on the substrate is imaged, and the difference value between the fiducial mark coordinate specified from the image and the theoretical coordinate of the fiducial mark is obtained. It is specified as the amount of displacement of the substrate. As described above, in the second substrate inspection apparatus, it is necessary to provide the camera and the illumination for imaging in order to specify the amount of displacement of the substrate, so that there is a problem that the configuration becomes complicated and the cost increases. . Furthermore, in order to realize accurate probing, it is necessary to specify both the probe mounting error and the substrate positional deviation amount. For this purpose, the processing performed by the above-described first substrate inspection apparatus and the second processing are performed. Both of the processes performed by the substrate inspection apparatus are performed, which further complicates the process and further increases the inspection efficiency.

  The present invention has been made in view of such problems, and a main object of the present invention is to provide a substrate inspection apparatus and a substrate inspection method capable of improving inspection efficiency while simplifying the configuration.

  In order to achieve the above object, a substrate inspection apparatus according to claim 1, wherein a holding unit that holds a substrate, a first direction parallel to the surface of the substrate held by the holding unit, and the surface is in contact with and separated from the surface. A probing mechanism for moving the probe in a second direction to probe the probe at a predetermined probing point on the surface, a control unit for controlling the probing mechanism, and when the probe is attached to the probing mechanism. A processing unit that executes a correction process for correcting the theoretical coordinates of the probing point with a correction amount corresponding to an attachment error and a positional deviation amount when the substrate is held by the holding unit, and a probe that is inserted through the probe. The measurement unit that measures the measured amount based on the output electrical signal and the measured amount measured by the measuring unit are used. An inspection unit for inspecting the substrate, wherein the control unit controls the probing mechanism and applies the surface to the surface of the inspection target substrate held by the holding unit. A moving process for moving the probe over a region including theoretical coordinates of a predesignated designated conductor formed on the surface in a state where the probe is brought into proximity is performed, and the measuring unit performs the moving process And measuring the capacitance as the amount to be measured during the execution of, and the processing unit specifies the actual coordinates of the designated conductor based on the change in the capacitance measured by the measurement unit, The correction processing is executed by specifying the amount of positional deviation between the specified actual coordinates and the theoretical coordinates of the designated conductor as the correction amount.

  The substrate inspection apparatus according to claim 2 is the substrate inspection apparatus according to claim 1, wherein the processing unit is configured to determine the position of the probe when the capacitance measured by the measurement unit is maximized. The lower position is specified as the actual coordinates of the designated conductor.

  The substrate inspection apparatus according to claim 3 is the substrate inspection apparatus according to claim 1 or 2, wherein the probing mechanism is configured to move the pair of probes, and the measurement unit is configured to perform the movement process. During the operation, the capacitance between the pair of probes is measured.

  According to a fourth aspect of the present invention, there is provided a substrate inspection method comprising: holding a substrate by a holding unit; and contacting a first direction parallel to the surface of the substrate held by the holding unit using a probing mechanism and the surface. When the probe is moved in the second direction to be separated and the probe is probed to a predetermined probing point on the surface, the substrate is placed on the holding portion and the mounting error when the probe is attached to the probing mechanism. A correction process for correcting the theoretical coordinates of the probing point with a correction amount corresponding to the amount of positional deviation when held is performed, and a measured amount measured based on an electrical signal input / output via the probe A substrate inspection method for inspecting the substrate using the probing mechanism, wherein the inspection pair held by the holding unit is used. Performing a moving process for moving the probe above a region including theoretical coordinates of a designated conductor designated in advance in the state where the probe is brought close to the surface of the substrate; The actual coordinates of the designated conductor are specified based on the change in capacitance as the measured amount measured during the movement process, and the theoretical coordinates of the specified conductor and the specified conductor are theoretically determined. The correction processing is executed by specifying the amount of positional deviation from the coordinates as the correction amount.

  According to the substrate inspection apparatus according to claim 1 and the substrate inspection method according to claim 4, the probe is located above the region including the theoretical coordinates of the designated conductor in a state where the probe is brought close to the surface of the substrate to be inspected. Execute the move process to move the specified conductor, specify the actual coordinates of the specified conductor based on the change in capacitance measured during the move process, and the actual coordinates of the specified conductor and the theoretical coordinates of the specified conductor By correcting the theoretical coordinates of the probing point by specifying the amount of misalignment as a correction amount, the correction amount is specified and the theoretical coordinates of the probing point are corrected without using an image of the specified conductor can do. Therefore, according to this board inspection apparatus and board inspection method, it is not necessary to provide a camera or illumination for imaging the designated conductor in order to specify the actual coordinates of the designated conductor, and therefore the configuration can be simplified accordingly. it can. Further, in this board inspection apparatus and board inspection method, the actual coordinates of the designated conductor and the theoretical coordinates of the designated conductor are determined in order to identify the actual coordinates of the designated conductor based on the measured amount measured using the probe. The positional deviation amount includes both the probe attachment error and the substrate positional deviation amount. Therefore, according to the substrate inspection apparatus and the substrate inspection method, in order to identify the probe attachment error, the probe attachment can be performed without performing the process of imaging the dent formed by probing the probe on the dent sheet. A correction amount that includes both the error and the amount of positional deviation of the substrate can be specified. Therefore, according to the substrate inspection apparatus and the substrate inspection method, the process of specifying the probe attachment error using the dent sheet can be omitted, and the inspection efficiency can be sufficiently improved accordingly.

  In the substrate inspection apparatus and the substrate inspection method, the probe is moved using a probing mechanism that actually performs probing at the time of inspection, and the correction amount is specified based on the change in capacitance obtained thereby. . That is, in the substrate inspection apparatus and the substrate inspection method, the correction amount is specified by moving the probe under the same movement conditions as the probe movement conditions (movement speed, backlash amount, etc.) during probing. For this reason, in this board inspection apparatus and board inspection method, as in the configuration and method for specifying the correction amount based on the image captured by moving the camera to the position of the dent or the specified conductor, the mass of the camera and the probe Compared to the configuration and method in which it is difficult to move the camera under the same movement conditions as the probe during the probing due to the difference in mass, etc., it is more accurate to match the probe movement during the probing. The correction amount can be specified. Therefore, according to this board inspection apparatus and board inspection method, even when a probing point is defined in a fine conductor pattern or pad, the actual coordinates are corrected by correcting the theoretical coordinates of the probing points. As a result of being able to calculate accurately, the probe can be surely probed to the probing points defined in such fine conductor patterns and pads.

  According to the substrate inspection apparatus of claim 2, by specifying the position below the position of the probe as the actual coordinates of the designated conductor when the electrostatic capacitance measured by the measurement unit is maximized, As a result of accurately specifying the actual coordinates of the designated conductor, the coordinates of the probing point can be corrected more accurately.

  According to the substrate inspection apparatus of the third aspect, the probing mechanism moves the pair of probes, and the measurement unit measures the capacitance between the pair of probes during the execution of the movement process. In the configuration in which the probing mechanism inspects the substrate based on the measured amount measured by the four-terminal method in which the probe is moved by moving the pair of probes, the actual coordinates of the designated conductor are accurately determined based on the change in capacitance. Can be identified. For this reason, according to this board inspection apparatus, the theoretical coordinates of the probing points for probing the pair of probes when measuring the measured amount by the four-terminal method can be accurately corrected.

1 is a configuration diagram showing a configuration of a substrate inspection apparatus 1. FIG. 5 is a flowchart of a correction process 50. FIG. 10 is a first explanatory diagram illustrating a correction process 50. It is the 2nd explanatory view explaining amendment processing 50. It is explanatory drawing explaining an inspection process.

  Hereinafter, embodiments of a substrate inspection apparatus and a substrate inspection method will be described with reference to the accompanying drawings.

  Initially, the structure of the board | substrate inspection apparatus 1 shown in FIG. 1 as an example of a board | substrate inspection apparatus is demonstrated. As shown in the figure, the substrate inspection apparatus 1 includes a holding unit 11, probing mechanisms 12a and 12b (hereinafter also referred to as “probing mechanism 12” when the probing mechanisms 12a and 12b are not distinguished), a measuring unit 13, and a storage unit 14. The display unit 15, the operation unit 16, and the processing unit 17 are provided so that the substrate 100 can be inspected. In this case, for example, the substrate inspection apparatus 1 measures the measured amount of the substrate 100 by the four-terminal method, and inspects the substrate 100 using the measured value.

  As shown in FIG. 1, the holding unit 11 is configured to be able to hold and hold the substrate 100 placed on the placement surface 11 a with a clamp outside the drawing.

  Each probing mechanism 12 is controlled in accordance with the control of the processing unit 17 in a first direction (hereinafter referred to as “XY direction”) parallel to the surface 101 of the substrate 100 held by the holding unit 11 (the mounting surface 11a of the holding unit 11). 3) and a second direction in contact with and away from the mounting surface 11a (for example, a direction perpendicular to the mounting surface 11a, hereinafter also referred to as “Z direction”: see FIG. ) And the probe 21 is probed (contacted) to a predetermined probing point on the surface 101 of the substrate 100.

  Moreover, in this board | substrate inspection apparatus 1, in order to measure a to-be-measured amount by a 4 terminal method as mentioned above, the four probes 21 are used for the measurement of a to-be-measured amount. Therefore, as shown in FIG. 3, each probing mechanism 12 moves a pair of probes 21 in a state of being slightly separated and adjacent to each other. In the following description, the pair of probes 21 moved by the probing mechanism 12a is also called probes 21a and 21b, and the pair of probes 21 moved by the probing mechanism 12b is also called probes 21c and 21d.

  The measurement unit 13 executes a measurement process for measuring the amount to be measured based on an electrical signal input / output via the probe 21 in accordance with an instruction from the processing unit 17. Specifically, the measurement unit 13 measures the capacitance Cm used in a correction process 50 (see FIG. 2), which will be described later, executed by the processing unit 17 as an amount to be measured. In this case, the measurement unit 13 measures the capacitance Cm between the pair of probes 21 moved by the probing mechanism 12. Further, the measurement unit 13 measures a resistance value Rm used in an inspection process, which will be described later, executed by the processing unit 17 as an amount to be measured.

  The storage unit 14 stores the capacitance Cm and the resistance value Rm measured by the measurement unit 13. In addition, the storage unit 14 stores the theoretical coordinates Apt of the probing points defined in advance on the surface 101 of the substrate 100. In this case, the probing point is defined on the conductor pattern 102 (see FIG. 5) formed on the surface 101 of the substrate 100 as an example. The theoretical coordinates Apt correspond to coordinates indicating the position of the probing point in a state where the substrate 100 is accurately placed and held at the specified position on the placement surface 11a of the holding unit 11. In addition, the storage unit 14 stores the coordinates Apr of the probing point corrected by the processing unit 17 in the correction process 50. Further, the storage unit 14 stores the correction amount Dr specified by the processing unit 17 in the specifying process described later in the correction process 50.

  The storage unit 14 also stores theoretical coordinates Aft of the fiducial mark M as a designated conductor formed on the surface 101 of the substrate 100. In this case, as an example, the fiducial mark M is composed of a conductor having a circular shape in plan view. The theoretical coordinates Aft indicate the position of the center (centroid) of the fiducial mark M in a state where the substrate 100 is accurately placed and held at the specified position on the mounting surface 11a of the holding unit 11. Corresponds to coordinates.

  The display unit 15 displays the result (inspection result) of the inspection process executed by the processing unit 17. The operation unit 16 includes switches, keys, and the like, and outputs an operation signal when these are operated.

  The processing unit 17 controls each unit constituting the substrate inspection apparatus 1 according to the operation signal output from the operation unit 16 and executes various processes. Specifically, the processing unit 17 functions as a control unit and controls the probing mechanism 12. In this case, the processing unit 17 controls the probing mechanism 12 and specifies the probe on the surface 101 of the substrate 100 to be inspected held in the holding unit 11 when specifying the correction amount Dr used in the correction processing 50 described later. In the state where 21 is brought close, a region B of a predetermined size including the coordinates Aft of the fiducial mark M (designated conductor) formed on the surface 101 (for example, the fiducial mark centering on the coordinates Aft) A moving process for moving the probe 21 is performed above an area about five times the radius of M (see FIG. 3).

  Further, the processing unit 17 has an attachment error (a separation distance from a predetermined attachment position) when the probe 21 is attached to the probing mechanism 12, and a positional deviation amount when the substrate 100 is held by the holding unit 11 ( A correction process 50 is executed to correct the theoretical coordinates Apt of the probing point by a correction amount Dr corresponding to a predetermined separation distance from the holding position. Further, the processing unit 17 specifies the actual coordinates Afr of the fiducial mark M based on the change in the capacitance Cm as the measured amount measured by the measuring unit 13, and also coordinates Afr and coordinates Aft (theoretical). A positional deviation amount (separation distance) from the upper coordinate) is specified as the correction amount Dr described above. In this case, the processing unit 17 uses the coordinates Afr (actual coordinates) of the fiducial mark M as the coordinates of the position below the position of the probe 21 when the electrostatic capacitance Cm measured by the measuring unit 13 is maximized. As specified.

  Further, the processing unit 17 functions as an inspection unit, and executes an inspection process for inspecting the substrate 100 (determining whether the substrate 100 is good or bad) using the measured amount measured by the measurement unit 13.

  Next, a substrate inspection method for inspecting the substrate 100 using the substrate inspection apparatus 1 will be described.

  First, as shown in FIG. 1, the substrate 100 to be inspected is placed on the placement surface 11 a of the holding unit 11, and then the substrate 100 is fixed by a clamp outside the drawing.

  Here, in this substrate inspection apparatus 1, the probe 21 is probed to the probing point defined on the surface 101 of the substrate 100 to inspect the substrate 100, but the probe 21 is accurately (reliably) probed to the probing point. In order to achieve this, a correction amount Dr corresponding to an attachment error when the probe 21 is attached to the probing mechanism 12 or a displacement amount when the substrate 100 is held by the holding unit 11 is specified, and the coordinates of the probing point are corrected. It is necessary to correct by the amount Dr. For this reason, prior to the inspection of the substrate 100, the operation unit 16 is operated to instruct execution of correction of the coordinates of the probing point, and in response thereto, the processing unit 17 executes the correction processing 50 shown in FIG.

  In the correction process 50, the processing unit 17 first reads the theoretical coordinates Aft of the fiducial mark M (designated conductor) formed on the surface 101 of the substrate 100 from the storage unit 14 (step 51).

  Subsequently, the processing unit 17 executes the movement process and instructs the measurement unit 13 to execute the measurement process (step 52). In the movement process, the processing unit 17 controls the probing mechanism 12a (one of the two probing mechanisms 12) to move the probes 21a and 21b in the Z direction as shown in FIG. It is made close to the surface 101 (as an example, it is positioned about 1 mm above the surface 101). Next, the processing unit 17 controls the probing mechanism 12a so that the probe 21a and 21b are brought close to the surface 101 as shown in FIG. The probe 21 is moved in the XY direction above the region B, which is about 5 times the radius of the fiducial mark M around Aft.

  In the measurement process, the measurement unit 13 outputs an electrical signal for measurement (alternating current) between the probes 21a and 21b moved by the probing mechanism 12a, and at that time, is generated between the probes 21a and 21b. An electric signal (voltage) is input, and the capacitance Cm between the probes 21a and 21b is measured based on the current value of the current, the voltage value of the voltage, and the phase difference between the current and the voltage. In this case, the measurement unit 13 determines that the probes 21a and 21b are a predetermined distance until the processing unit 17 instructs the end of the measurement process (while the probing mechanism 12a moves the probes 21a and 21b). Each time it moves, the capacitance Cm is measured. In addition, the processing unit 17 causes the storage unit 14 to store the capacitance Cm measured every time it moves by a specified distance.

  Subsequently, the processing unit 17 controls the probing mechanism 12b (the other of the two probing mechanisms 12) in the same manner as the control for the probing mechanism 12a, and the probes 21c and 21d are brought close to the surface 101 of the substrate 100. The probes 21c and 21d are moved above the region B. Further, the processing unit 17 causes the measurement unit 13 to measure the capacitance Cm between the probes 21c and 21d in the same manner as the measurement of the capacitance Cm between the probes 21a and 21b. The capacitance Cm measured each time 21d moves by a specified distance is stored in the storage unit 14.

  Next, the processing unit 17 executes a specifying process for specifying the correction amount Dr (step 53). In this specific process, the processing unit 17 reads the capacitance Cm measured from the storage unit 14 each time the probes 21a and 21b move by a specified distance by the probing mechanism 12a. Subsequently, the processing unit 17 specifies the actual coordinates Afr of the fiducial mark M based on the change in the capacitance Cm accompanying the movement of the probes 21a and 21b.

  In this case, the electrostatic capacitance Cm between the probes 21a and 21b measured by the measuring unit 13 is increased with the probes 21a and 21b as the probes 21a and 21b approach the fiducial mark M as shown in FIG. The capacitance increases with the addition of a capacitance between the dual mark M and the dual mark M. The electrostatic position measured by the measurement unit 13 when the intermediate position between the probes 21a and 21b is located above the center (center of gravity) coordinates of the fiducial mark M (that is, the actual coordinates Afr). The capacity Cm is maximized. Therefore, as shown in the figure, the processing unit 17 is located below the position of the probes 21a and 21b (specifically, the intermediate position between the probes 21a and 21b) when the electrostatic capacitance Cm is maximized. The coordinates of the position are calculated from the movement amounts of the probes 21a and 21b by the probing mechanism 12a, and the coordinates are specified as the actual coordinates Afr of the fiducial mark M. Next, as shown in FIG. 3, the processing unit 17 coordinates Afr (actual coordinates: coordinates of the center (center of gravity) of the solid line fiducial mark M) and coordinates Aft (theoretical coordinates: broken line fiducials). The positional deviation amount (separation distance) from the center (coordinate of the center (center of gravity) of the mark M) is specified as the correction amount Dr for the probing mechanism 12a and stored in the storage unit 14.

  Subsequently, the processing unit 17 stores the capacitance Cm measured each time the probes 21c and 21d are moved by the specified distance by the probing mechanism 12b in the same manner as the specification of the correction amount Dr for the probing mechanism 12a. Read from. Next, the processing unit 17 uses the coordinates of the positions below the positions of the probes 21c and 21d (intermediate position between the probes 21c and 21d) when the electrostatic capacitance Cm is maximized as the probes 21c and 21c by the probing mechanism 12b. It is calculated from the movement amount of 21d, and the coordinates are specified as the actual coordinates Afr of the fiducial mark M. Subsequently, the processing unit 17 specifies the positional deviation amount (separation distance) between the coordinates Afr (actual coordinates) and the coordinates Aft (theoretical coordinates) as the correction amount Dr for the probing mechanism 12b and stores it in the storage unit 14. Remember me. Thereby, the specifying process for specifying the correction amount Dr ends.

  In this case, in the substrate inspection apparatus 1 and the substrate inspection method, as described above, the measured amount obtained by measuring the actual coordinates Afr of the fiducial mark M of the substrate 100 to be inspected using the inspection probe 21. Can be identified based on. For this reason, in this board | substrate inspection apparatus 1 and a board | substrate inspection method, since it is not necessary to provide the camera for identifying the coordinate Afr of the fiducial mark M, and the illumination for imaging, it can simplify a structure to that extent. It is possible. Further, since the coordinate Afr is specified based on the measured amount measured using the probe 21, the positional deviation amount between the coordinate Afr and the coordinate Aft includes the attachment error of the probe 21 and the positional deviation amount of the substrate 100. Both are included. For this reason, in order to specify the attachment error of the probe 21, it is not necessary to perform the process of imaging the dent formed by probing the probe 21 on the dent sheet, and therefore the inspection efficiency is sufficiently improved accordingly. It is possible.

  Next, the processing unit 17 uses the probing mechanism 12a for probing the probes 21a and 21b (hereinafter, also referred to as “probing point for the probing mechanism 12a”), the coordinate Apt (theoretical coordinates), and the probing mechanism 12b. Coordinates Apt of the probing points for probing the probes 21c and 21d (hereinafter also referred to as “probing points for the probing mechanism 12b”) are read from the storage unit 14 (step 54).

  Subsequently, the processing unit 17 increases or decreases the correction amount Dr for the probing mechanism 12a specified by the specifying process and stored in the storage unit 14 to the coordinates apt of the probing point for the probing mechanism 12a to correct the coordinates Apt. Then, the actual coordinates Apr of the probing point for the probing mechanism 12a are calculated. In addition, the processing unit 17 corrects the coordinate Apt by increasing or decreasing the correction amount Dr for the probing mechanism 12b specified in the specific process and stored in the storage unit 14 to the coordinates Apt of the probing point for the probing mechanism 12b. Then, the actual coordinates Apr of the probing point for the probing mechanism 12b are calculated (step 55).

  Next, the processing unit 17 stores the calculated coordinates Apr in the storage unit 14 (step 56). Thus, the correction process 50 for correcting the coordinates of the probing point is completed.

  Subsequently, the operation unit 16 is operated to instruct the processing unit 17 to execute the inspection process. In this inspection process, the processing unit 17 reads from the storage unit 14 the coordinates Apr of the probing points for probing the probes 21a and 21b (corrected coordinates) and the coordinates Apr of the probing points for probing the probes 21c and 21d. In this case, for example, as illustrated in FIG. 5, the processing unit 17 reads the coordinates Apr1 and Apr2 of the two probing points as probing points for inspecting the conduction state of the conductor pattern 102 formed on the substrate 100. Shall be. In the figure, the theoretical position of the conductor pattern 102 and the theoretical coordinates Apt and Apt of the probing point are indicated by broken lines.

  Next, the processing unit 17 controls the probing mechanisms 12a and 12b to move the probes 21 in the XY and Z directions toward the coordinates Apr1 and Apr2, as shown in FIG. Probe 21 is probed.

  Subsequently, the processing unit 17 instructs the measurement unit 13 to execute the measurement process. In this case, for example, the measurement unit 13 outputs a current (DC constant current) between the probes 21a and 21d and inputs a voltage generated between the probes 21b and 21c at that time, and the current value of the current and the voltage of the voltage Based on the value, the resistance value Rm (measured amount) of the conductor pattern 102 is measured.

  Next, the processing unit 17 compares the resistance value Rm measured by the measuring unit 13 with a reference value to determine whether the conductive state of the conductor pattern 102 is good. Specifically, when the resistance value Rm is less than the reference value, the processing unit 17 determines that the conductive state of the conductor pattern 102 is good, and when the resistance value Rm is greater than or equal to the reference value, the conductive state of the conductor pattern 102 is poor. Is determined.

  Subsequently, the processing unit 17 reads the probing point coordinates Apr for the conductor pattern 102 to be inspected next, and then controls the probing mechanisms 12a and 12b to cause each probe 21 to probe each probing point. Subsequently, the processing unit 17 instructs the measurement unit 13 to execute the measurement process, and then compares the resistance value Rm measured by the measurement unit 13 with the reference value to determine whether the conductive state of the conductor pattern 102 is good or bad. Determine. Hereinafter, similarly, the processing unit 17 determines whether the conductive state of each conductor pattern 102 is good or bad.

  Subsequently, when the determination of the quality of the conductive state of all the conductor patterns 102 is completed, the processing unit 17 determines the quality of the substrate 100 based on the determination result of the quality of the conductive state of each conductor pattern 102. In this case, the processing unit 17 determines that the substrate 100 is good when all the conductive patterns 102 are in a good conduction state, and when the conduction state of one or more conductor patterns 102 is bad, the substrate 100 is bad. It is determined that Next, the processing unit 17 displays the determination result (inspection result) on the display unit 15. Thus, the inspection of the substrate 100 is completed. In this case, as described above, by correcting the coordinates of the probing point, the probe 21 can be probed accurately (reliably) at each probing point, so that the inspection can be performed accurately. .

  As described above, according to the substrate inspection apparatus 1 and the substrate inspection method, the region B including the theoretical coordinates Aft of the fiducial mark M in a state where the probe 21 is brought close to the surface 101 of the substrate 100 to be inspected. A movement process for moving the probe 21 is executed above, and the actual coordinates Afr of the fiducial mark M are specified based on the change in the capacitance Cm measured during the movement process, and the coordinates Afr and coordinates Aft are specified. Is determined as the correction amount Dr and the theoretical coordinates Apt of the probing point are corrected, so that the correction amount Dr can be specified without using the image obtained by capturing the fiducial mark M. The coordinate Apt can be corrected. Therefore, according to the substrate inspection apparatus 1 and the substrate inspection method, there is no need to provide a camera or illumination for imaging the fiducial mark M in order to specify the coordinates Afr of the fiducial mark M. Can be simplified. Moreover, in this board | substrate inspection apparatus 1 and a board | substrate inspection method, in order to specify coordinate Afr based on the to-be-measured amount measured using the probe 21, the position deviation amount of the coordinate Afr and the coordinate Aft is attached to the probe 21 attachment. Both the error and the amount of positional deviation of the substrate 100 are included. For this reason, according to this board | substrate inspection apparatus 1 and a board | substrate inspection method, in order to pinpoint the attachment error of the probe 21, without performing the process which images the dent formed by probing the probe 21 on the dent sheet | seat, The correction amount Dr including both the attachment error of the probe 21 and the positional deviation amount of the substrate 100 can be specified. Therefore, according to this board | substrate inspection apparatus 1 and the board | substrate inspection method, the process which specifies the attachment error of the probe 21 using a dent sheet | seat can be abbreviate | omitted, As a result, inspection efficiency can fully be improved correspondingly. it can.

  Moreover, in this board | substrate inspection apparatus 1 and a board | substrate inspection method, the probe 21 is moved using the probing mechanism 12 which actually performs probing at the time of inspection, and the correction amount Dr is set based on the change in capacitance obtained thereby. I have identified. That is, in the substrate inspection apparatus 1 and the substrate inspection method, the correction amount Dr is specified by moving the probe 21 under the same movement conditions as the movement conditions (movement speed, amount of backlash, etc.) of the probe 21 during probing. Yes. For this reason, in this board | substrate inspection apparatus 1 and a board | substrate inspection method, like the structure and method of specifying correction amount Dr based on the image which moved the camera to the position of a dent and fiducial mark M, and was imaged, Compared to the configuration and method in which it is difficult to move the camera under the same movement conditions as the probe 21 during the probing due to the difference between the mass and the mass of the probe 21, the probe 21 during the probing It is possible to specify an accurate correction amount Dr suitable for the movement condition. Therefore, according to the substrate inspection apparatus 1 and the substrate inspection method, even when the probing point is defined in the fine conductor pattern 102 or the pad, the theoretical coordinates Apt of the probing point are corrected and actually As a result, the probe 21 can be reliably probed at the probing point defined in such a fine conductor pattern 102 or pad.

  Moreover, according to this board | substrate inspection apparatus 1 and a board | substrate inspection method, the position below the position of the probe 21 when the measured electrostatic capacitance Cm becomes maximum is specified as the actual coordinate Afr of the fiducial mark M. As a result, the actual coordinates Afr of the fiducial mark M can be accurately specified, and as a result, the probing point coordinates Apt can be corrected more accurately.

  Moreover, according to this board | substrate inspection apparatus 1 and a board | substrate inspection method, the probing mechanism 12 moves a pair of probe 21, and the measurement part 13 measures the electrostatic capacitance Cm between a pair of probes 21 during execution of a movement process. Thus, in the configuration in which the substrate 100 is inspected based on the measured amount measured by the four-terminal method in which the two probing mechanisms 12 move the pair of probes 21 to perform probing, the actual fiducial mark M is actually measured. The coordinate Afr can be accurately specified based on the change in the capacitance Cm. For this reason, according to this board | substrate inspection apparatus 1 and the board | substrate test | inspection method, when measuring a to-be-measured amount by a 4 terminal method, the coordinate apt of the probing point which probes a pair of probe 21 can be correct | amended correctly.

  The substrate inspection apparatus and the substrate inspection method are not limited to the above configuration and method. For example, the measurement was measured by the four-terminal method, and the example applied to the configuration and method for inspecting the substrate 100 based on the measurement quantity was described above. The present invention can also be applied to a configuration and method for inspecting the substrate 100 based on the measured amount. In this case, in the above configuration and method in which one probing mechanism 12 moves the pair of probes 21 (configuration and method in which measurement is performed by the four-terminal method), the capacitance Cm between the pair of probes 21 is measured. The coordinate Afr (actual coordinate) of the fiducial mark M is specified based on the change in the capacitance Cm. A configuration and method in which one probing mechanism 12 moves one probe 21 (measured by the two-terminal method). In the configuration and method), the capacitance Cm between one probe 21 and the fiducial mark M (designated conductor) is measured, and the fiducial mark M is changed based on the change in the capacitance Cm. The coordinate Afr can be specified. Further, in the configuration and method including two probing mechanisms 12 for moving one probe 21 (configuration and method for performing measurement by the two-terminal method), the capacitance Cm between the probes 21 of the two probing mechanisms 12 is used. And the coordinates Afr of the fiducial mark M may be specified based on the change in the capacitance Cm.

  Further, each capacitance Cm measured each time the probe 21 moves by a specified distance and the coordinates where the probe 21 was located when each capacitance Cm was measured are obtained by quantitative processing. The coordinates can also be specified as the coordinates Afr. As an example, when there are a plurality of positions where the capacitance Cm is equal to or greater than a value obtained by multiplying the maximum value of the capacitance Cm by a predetermined rate (for example, 80%), the position of the center of gravity of each position And the coordinates of the position of the center of gravity can be specified as the coordinates Afr.

  In addition, although the example in which the fiducial mark M formed on the substrate 100 is used as the designated conductor has been described above, a configuration and method using a conductor pattern, a via (through hole), and a pad as the designated conductor can also be adopted.

  Further, the example in which the probe 21 is moved with the direction perpendicular to the surface 101 (mounting surface 11a) of the substrate 100 as the second direction has been described above, but the direction inclined with respect to the surface 101 is defined as the second direction. It is also possible to adopt a configuration and a method for moving

  Moreover, although the processing unit 17 also functions as a control unit and an inspection unit (an example of a configuration in which the processing unit, the control unit, and the inspection unit are integrated), the processing unit, the control unit, and the inspection unit are separated. A configuration can also be adopted. Moreover, the structure which unites arbitrary two of a process part, a control part, and a test | inspection part is also employable.

  Moreover, although the measurement unit 13 measures the resistance value Rm as the measurement amount used for the inspection and the processing unit 17 inspects the substrate 100 using the resistance value Rm measured by the measurement unit 13, the inspection is described above. The amount to be measured used for is not limited to the resistance value Rm. For example, a configuration and a method are employed in which the measurement unit 13 measures a voltage value, a current value, an impedance value, a capacitance value, and the like as a measured amount, and the processing unit 17 inspects the substrate 100 using these measured amounts. You can also.

DESCRIPTION OF SYMBOLS 1 Board | substrate inspection apparatus 11 Holding | maintenance part 12a, 12b Probing mechanism 13 Measuring part 17 Processing part 21a-21d Probe 100 Board | substrate 101 Surface Afr, Aft, Apr, Apt coordinate B area | region Cm Electrostatic capacity Dr Correction amount M Fiducial mark

Claims (4)

The probe is moved in a first direction parallel to the surface of the substrate held by the holding unit and the second direction in contact with and away from the surface, and the surface is determined in advance on the surface. A probing mechanism for probing the probe at a probing point; a control unit for controlling the probing mechanism; an attachment error when the probe is attached to the probing mechanism; and a position when the substrate is held by the holding part. A processing unit that performs a correction process for correcting the theoretical coordinates of the probing point with a correction amount corresponding to a deviation amount; and a measurement unit that measures a measured amount based on an electric signal input and output through the probe. And an inspection unit for inspecting the substrate using the measured amount measured by the measurement unit. There,
The control unit controls the probing mechanism, and a predesignated designation formed on the surface in a state where the probe is brought close to the surface of the substrate to be inspected held by the holding unit. Perform a movement process to move the probe above the area containing the theoretical coordinates of the conductor,
The measuring unit measures the capacitance as the measured amount during the execution of the movement process,
The processing unit identifies the actual coordinates of the designated conductor based on the change in the capacitance measured by the measurement unit, and the identified actual coordinates and the theoretical coordinates of the designated conductor; A substrate inspection apparatus that specifies the amount of positional deviation as the correction amount and executes the correction process.   The substrate inspection apparatus according to claim 1, wherein the processing unit specifies, as actual coordinates of the designated conductor, a position below the position of the probe when the electrostatic capacitance measured by the measurement unit is maximized. . The probing mechanism is configured to move the pair of probes.
The substrate inspection apparatus according to claim 1, wherein the measurement unit measures a capacitance between the pair of probes during the execution of the movement process. The holding unit holds the substrate, and the probe is moved in a first direction parallel to the surface of the substrate held by the holding unit and a second direction contacting and separating from the surface using a probing mechanism. When probing the probe at a predetermined probing point on the surface, a correction corresponding to an attachment error when the probe is attached to the probing mechanism and a displacement amount when the substrate is held by the holding portion. A substrate inspection method in which a correction process for correcting theoretical coordinates of the probing point by a quantity is executed, and the board is inspected using a measured quantity measured based on an electric signal input / output through the probe. And
Using the probing mechanism, theoretical coordinates of a designated conductor specified in advance formed on the surface of the substrate to be inspected held by the holding unit in a state where the probe is brought close to the surface. Execute a movement process to move the probe above the area containing
The actual coordinates of the designated conductor are specified based on the change in capacitance as the measured amount measured during the movement process, and the theoretical coordinates of the specified conductor and the specified conductor are theoretically determined. A substrate inspection method for performing the correction processing by specifying a positional deviation amount from coordinates as the correction amount.

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