JP2018142678A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method capable of precisely controlling a processing width in an outer peripheral portion of a substrate regardless of the rotation speed of the substrate. SOLUTION: A processing unit 2 has a spin chuck 5 that supports a central portion of the substrate W and holds the substrate W without supporting the outer peripheral portion of the substrate W, and a processing liquid toward the outer peripheral portion of the substrate W. Includes a processing liquid nozzle 19 for discharging the gas, and a gas nozzle 101 for blowing gas from the inside in the radial direction of the substrate W toward the processing liquid landed at the landing position 45 of the processing liquid on the substrate W. By spraying the gas from the gas nozzle 101, the liquid landing position liquid width, which is the width of the processing liquid at the liquid landing position 45, is adjusted to a width corresponding to the rotation speed of the substrate W. [Selection diagram] Fig. 2

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

  In a manufacturing process of a semiconductor device, a liquid crystal display device, or the like, a process using a processing liquid is performed on an outer peripheral portion of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device. A single-wafer type substrate processing apparatus that processes substrates one by one includes, for example, a spin chuck that holds and rotates a substrate horizontally, and a processing liquid toward an outer peripheral portion of the upper surface of the substrate held by the spin chuck. And a processing liquid nozzle for discharging (see Patent Document 1 below).

  In such a substrate processing apparatus, the processing liquid is discharged toward a predetermined liquid deposition position on the outer peripheral portion of the upper surface of the substrate while rotating the substrate. As the substrate rotates, the processing liquid supplied to the landing position spreads over the entire area in the circumferential direction of the substrate, whereby an annular processing liquid having a predetermined width is formed on the outer peripheral portion of the upper surface of the substrate.

JP2011-258925A

  However, in the configuration as disclosed in Patent Document 1, when the substrate rotation speed during processing (processing rotation speed) is slow, the centrifugal force due to the rotation of the substrate is weak, so that the processing liquid that has landed at the liquid landing position is liquid landing. There is a possibility that it swells in position and spreads inside the substrate. In this case, the width of the region processed with the processing liquid (hereinafter referred to as “processing width”) at the outer peripheral portion of the substrate may be larger than the intended width. That is, if the processing rotation speed is slow, the processing width may not be precisely controlled. Therefore, it is required to precisely control the processing width at the outer peripheral portion of the substrate even when the processing rotational speed is low.

  Therefore, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of precisely controlling the processing width at the outer peripheral portion of the substrate regardless of the rotation speed of the substrate.

  The invention according to claim 1 for achieving the above object includes a substrate holding unit for holding a substrate in which at least a part of a peripheral end forms an arc shape, and a substrate held by the substrate holding unit. A substrate rotating unit that rotates around a rotation axis passing through a central portion of the substrate, a processing liquid nozzle for discharging a processing liquid toward an outer peripheral portion of the substrate held by the substrate holding unit, and a processing liquid in the substrate A substrate that rotates the substrate at a predetermined processing rotation speed by controlling the substrate rotation unit and a gas nozzle that blows gas from the inside in the rotation radius direction of the substrate toward the processing solution that has been deposited at the liquid deposition position In parallel with the rotating step, the substrate rotating step, a processing liquid discharging step for discharging the processing liquid from the processing liquid nozzle toward the outer peripheral portion of the substrate, the substrate rotating step, In parallel with the processing liquid discharge step, the gas spraying step of blowing a gas from the inside in the rotational radius direction of the substrate toward the processing liquid deposited on the position where the processing liquid is deposited on the substrate, and the gas spraying step In parallel, the position of the inner peripheral edge of the processing liquid that is deposited on the liquid deposition position by controlling the gas spray position on the substrate and / or the gas flow rate of the gas sprayed from the gas nozzle to the substrate. And a control device that executes an inner peripheral end position adjusting step of adjusting the position to a position corresponding to the processing rotation speed.

  According to this configuration, gas is sprayed from the inside of the substrate toward the processing liquid that has been deposited on the liquid deposition position on the outer peripheral portion of the substrate. The position of the inner peripheral edge of the processing liquid that has reached the liquid landing position (hereinafter referred to as “the position of the inner peripheral edge of the liquid processing liquid”) depends on the rotation speed of the substrate. By adjusting the position of the gas spray region on the substrate and / or the flow rate of the gas sprayed onto the substrate in accordance with the processing rotation speed of the substrate, the position of the inner peripheral edge of the liquid deposition processing liquid is adjusted to the processing rotation speed ( It can be adjusted to a position corresponding to the rotation speed of the substrate during processing.

By adjusting the position of the inner peripheral edge of the liquid treatment liquid, the width of the liquid that has landed at the liquid landing position (hereinafter referred to as “liquid landing position liquid width”) is a width suitable for the processing rotational speed. In this case, the liquid landing position liquid width can be precisely controlled regardless of the rotation speed of the substrate.
As described above, the processing width at the outer peripheral portion of the substrate can be precisely controlled regardless of the rotation speed of the substrate.

The invention according to claim 2 further includes a gas nozzle driving unit for driving the gas nozzle, and the control device controls the gas nozzle driving unit as the inner peripheral end position adjusting step to control the gas nozzle. The substrate processing apparatus according to claim 1, wherein a step of adjusting a position of the spray region is executed.
According to this configuration, the position of the inner peripheral end of the liquid deposition process liquid is adjusted to a position corresponding to the process rotation speed by changing the position of the gas spray region on the substrate. The position of the gas spray region directly affects the position of the inner peripheral end of the liquid landing treatment liquid, and greatly affects the position of the inner peripheral end of the liquid landing processing liquid. Therefore, by changing the position of the gas spray region, it is possible to more effectively change the position of the inner peripheral end of the liquid deposition treatment liquid. In this case, the liquid landing position liquid width can be controlled more precisely.

The invention described in claim 3 further includes a first information storage unit that stores first correspondence definition information that defines a correspondence relationship between the processing rotation speed and the position of the gas blowing region, 3. The substrate processing apparatus according to claim 2, wherein the control device executes the inner peripheral end position adjusting step based on the first correspondence relationship defining information.
According to this configuration, the inner peripheral end based on the correspondence between the processing rotation speed and the position of the gas blowing region, which is defined by the first correspondence defining information stored in the first information storage unit. A position adjustment process is performed. Thereby, the position of the inner peripheral end of the landing liquid can be reliably controlled to a position corresponding to the processing rotation speed at the time of processing.

The invention according to claim 4 further includes a blowing flow rate adjusting unit for adjusting the blowing flow rate of the gas, and the control device controls the blowing flow rate adjusting unit as the inner peripheral end position adjusting step to control the gas flow rate. It is a substrate processing apparatus as described in any one of Claims 1-3 which performs the gas flow rate adjustment process which adjusts the spraying flow volume.
According to this configuration, the position of the inner peripheral end of the liquid deposition processing liquid is adjusted to a position corresponding to the processing rotation speed by adjusting the gas blowing flow rate on the substrate. In this case, the liquid landing position liquid width can be controlled more precisely.

The invention according to claim 5 further includes a second information storage unit that stores second correspondence defining information that defines the correspondence between the processing rotation speed and the flow rate of the gas.
The said control apparatus is a substrate processing apparatus of Claim 4 which performs the said inner peripheral end position adjustment process based on the said 2nd correspondence definition information.
According to this configuration, the inner peripheral end position adjustment is performed based on the correspondence relationship between the processing rotation speed and the gas blowing flow rate, which is defined by the second correspondence definition information stored in the second information storage unit. The process is executed. Thereby, the position of the inner peripheral end of the landing liquid can be reliably controlled to a position corresponding to the processing rotation speed at the time of processing.

According to a sixth aspect of the present invention, the control device does not execute the inner peripheral end position adjusting step when the processing rotational speed is equal to or higher than a predetermined speed, and the processing rotational speed is less than a predetermined speed. 6. The substrate processing apparatus according to claim 1, wherein the inner peripheral end position adjusting step is executed in some cases.
When the processing rotation speed is slow, the processing liquid that has reached the landing position may swell at the landing position and spread inside the substrate. On the other hand, when the processing rotation speed is high, there is no possibility that the processing liquid that has reached the liquid landing position spreads inside the substrate.

According to this configuration, the inner peripheral edge position adjustment step is executed only when the processing liquid that has reached the liquid landing position may spread inside the substrate and the processing rotation speed is low. That is, the inner peripheral end position adjusting process can be executed only when necessary.
The invention described in claim 7 includes a unit that holds the substrate by supporting the central portion of the substrate without supporting the outer peripheral portion of the substrate, and the substrate processing apparatus includes: Each of the peripheral edge position measuring units for measuring the peripheral edge position in the circumferential direction of the substrate held by the substrate holding unit, the control device, the peripheral of the substrate held by the substrate holding unit A process of performing each peripheral end position measurement step of measuring each peripheral end position in the direction by each of the peripheral end position measurement units, and further landing on the liquid landing position as the inner peripheral end position adjustment step The liquid is deposited on the liquid deposition position so that the inner circumferential edge of the liquid reciprocates following the position change of the circumferential position at the circumferential position where the treatment liquid nozzle is disposed. To adjust the position of the inner peripheral edge of the processing solution To perform a substrate processing apparatus according to any one of claims 1 to 6.

According to this configuration, by adjusting the position of the gas spraying area and / or the gas spraying flow rate, the inner peripheral end of the processing liquid that has landed at the liquid landing position is changed to the position change of the arrangement position peripheral end. It can follow and reciprocate. Thereby, the uniformity of the processing width in the outer peripheral portion of the substrate can be kept high without depending on the reciprocating movement of the processing liquid landing position.
According to an eighth aspect of the present invention, in the gas nozzle, the gas nozzle has a gas discharge port in which the gas blowing region forms a strip shape along the outer peripheral portion of the substrate. The substrate processing apparatus according to the item.

According to this configuration, since the gas spray region has a band shape along the outer peripheral portion of the substrate, it is more effectively suppressed that the processing liquid flowing through the outer peripheral portion of the substrate spreads inside the substrate. be able to. Therefore, the processing width at the outer peripheral portion of the substrate can be controlled more precisely.
The invention according to claim 9 is the substrate processing apparatus according to any one of claims 1 to 8, wherein the gas nozzle discharges gas obliquely downward and outward of the substrate.

According to this structure, a gas nozzle discharges gas toward diagonally downward. The gas discharged from the gas nozzle flows along the main surface of the substrate. Thereby, a press can be efficiently applied to the inner peripheral end of the liquid film of the processing liquid.
In order to achieve the above object, the invention according to claim 10 is to rotate a substrate having at least a part of the peripheral end in an arc shape around a rotation axis passing through a central portion of the substrate at a predetermined processing rotation speed. In parallel with the substrate rotation step, a processing liquid discharge step for discharging the processing liquid from the processing liquid nozzle toward the outer peripheral portion of the substrate, and the substrate rotation step and the processing liquid discharge step. In parallel to the gas spraying step of spraying gas from the inside in the rotational radius direction of the substrate toward the processing liquid deposited at the position where the processing liquid is deposited on the substrate, in parallel with the gas spraying step, the substrate The position of the inner peripheral edge of the processing liquid that has landed on the liquid deposition position is controlled by controlling the gas spraying position and / or the flow rate of the gas sprayed from the gas nozzle to the substrate. Inner peripheral edge position adjusting a position corresponding to the rotational speed comprises an adjusting step, to provide a substrate processing method.

According to this method, an operational effect equivalent to the operational effect described in relation to the first aspect is obtained.
The invention according to claim 11 is the substrate processing method according to claim 10, wherein the inner peripheral end position adjusting step includes a step of adjusting a position of the gas blowing region.
According to this method, an operational effect equivalent to the operational effect described in relation to claim 2 is obtained.
A twelfth aspect of the present invention is the substrate processing method according to the tenth or eleventh aspect, wherein the inner peripheral end position adjusting step includes a gas flow rate adjusting step of adjusting the blowing flow rate of the gas.

According to this method, the same function and effect as those described in connection with claim 4 are achieved.
According to a thirteenth aspect of the present invention, the inner peripheral edge position adjusting step is not executed when the processing rotation speed is equal to or higher than a predetermined speed, and is executed when the processing rotation speed is lower than a predetermined speed. The substrate processing method according to any one of claims 10 to 12.
According to this method, the same function and effect as those described in connection with claim 6 are obtained.

  The invention described in claim 14 is performed in the substrate processing apparatus including the substrate holding unit that holds the substrate while supporting the central portion of the substrate without supporting the outer peripheral portion of the substrate. The substrate processing method further includes a peripheral edge position measuring step of measuring each peripheral edge position in the circumferential direction of the substrate held by the substrate holding unit, and the inner peripheral edge position adjustment The step is such that the inner peripheral end of the liquid landing position liquid width reciprocates following the change in position of the arrangement position peripheral end, which is the peripheral end of the circumferential position where the treatment liquid nozzle is arranged. 14. The substrate processing method according to claim 10, comprising a step of adjusting a position of an inner peripheral end of the processing liquid that has been applied to the landing position.

  According to this method, the same function and effect as those described with reference to claim 7 are obtained.

FIG. 1 is a schematic plan view for explaining an internal layout of the substrate processing apparatus according to the first embodiment of the present invention. FIG. 2 is an illustrative view for explaining a configuration example of a processing unit provided in the substrate processing apparatus. FIG. 3A is a cross-sectional view showing a state in which the processing liquid and the gas are discharged from the processing liquid nozzle and the gas nozzle arranged at the processing position, respectively. FIG. 3B is a cross-sectional view illustrating a state in which the processing liquid is discharged from the processing liquid nozzle in the reference example. FIG. 4 is a plan view of the gas nozzle in a state of being disposed at the processing position. FIG. 5 is a schematic diagram showing a state where the substrate is held by the spin chuck in an eccentric state. FIG. 6 is a schematic diagram showing a state where the substrate is held by the spin chuck in an eccentric state. FIG. 7 is a plan view showing the processing width of the outer peripheral region of the upper surface of the substrate in the reference processing example. FIG. 8 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus. FIG. 9 is a diagram for explaining the rotation speed-spraying area position correspondence table stored in the information storage unit. FIG. 10 is a flowchart for explaining a first substrate processing example executed by the processing unit. FIG. 11 is a flowchart for explaining the contents of each circumferential end radial direction position measuring step shown in FIG. 10. FIG. 12 is a flowchart for explaining the contents of the outer peripheral portion processing step shown in FIG. FIG. 13 is a schematic diagram for explaining the contents of the outer peripheral portion processing step. FIG. 14 is a schematic diagram for explaining the contents of the outer peripheral portion processing step. FIG. 15A is a diagram schematically showing the state of the processing liquid nozzle and the gas nozzle in the outer peripheral portion processing step. FIG. 15B is a diagram schematically showing the state of the processing liquid nozzle and the gas nozzle in the outer peripheral portion processing step. FIG. 16 is a plan view showing the processing width of the outer peripheral region of the upper surface of the substrate in the first substrate processing example. FIG. 17A is a diagram schematically illustrating the state of the processing liquid nozzle and the gas nozzle in the outer peripheral portion processing step according to the second substrate processing example. FIG. 17B is a diagram schematically illustrating the state of the processing liquid nozzle and the gas nozzle in the outer peripheral portion processing step. FIG. 18 is a diagram for explaining the rotation speed-spraying area position correspondence table stored in the information storage unit. FIG. 19 is a flowchart for explaining the contents of the outer peripheral portion processing step according to the third substrate processing example according to the second embodiment. FIG. 20A is a diagram schematically illustrating a state of the processing liquid nozzle and the gas nozzle in the outer peripheral portion processing step according to the fourth substrate processing example according to the second embodiment. FIG. 20B is a diagram schematically showing the state of the processing liquid nozzle and the gas nozzle in the outer peripheral portion processing step.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is an illustrative plan view for explaining the internal layout of the substrate processing apparatus according to the first embodiment of the present invention. The substrate processing apparatus 1 is a single-wafer type apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one with a processing liquid or a processing gas. The substrate processing apparatus 1 includes a plurality of processing units 2 that process a substrate W using a processing liquid, a load port LP on which a carrier C1 that stores a plurality of substrates W processed by the processing unit 2 is placed, A transfer robot IR and CR that transfer the substrate W between the load port LP and the processing unit 2 and a control device 3 that controls the substrate processing apparatus 1 are included. The transfer robot IR transfers the substrate W between the carrier C1 and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have the same configuration, for example.

FIG. 2 is an illustrative view for explaining a configuration example of the processing unit 2.
The processing unit 2 includes the outer peripheral portion 41 (see FIG. 3A and the like) of the substrate W, more specifically, the outer peripheral region 42 (see FIG. 3A and the like) on the upper surface (main surface) of the substrate W and the peripheral end surface 44 (see FIG. 3A) is a unit for processing (top side processing) using a processing liquid. In this embodiment, the outer peripheral portion 41 of the substrate W includes the outer peripheral region 42 on the upper surface of the substrate W, the outer peripheral region 43 (see FIG. 3A and the like) on the lower surface (main surface) of the substrate W, and the peripheral end surface 44 of the substrate W. The part to include. The outer peripheral regions 42 and 43 are, for example, annular regions having a width of about several millimeters to several millimeters from the peripheral edge of the substrate W.

  The processing unit 2 includes a box-shaped processing chamber 4 having an internal space, a single substrate W held in a horizontal posture in the processing chamber 4, and a substrate around a vertical rotation axis A 1 passing through the center of the substrate W. A spin chuck (substrate holding unit) 5 for rotating W, and a processing liquid supply unit 6 for supplying a processing liquid (chemical solution and rinsing liquid) to the outer peripheral region 42 on the upper surface of the substrate W held by the spin chuck 5; Then, an inert gas as an example of a gas is sprayed from the inner side to the outer side in the rotational radius direction (hereinafter referred to as the radial direction RD) of the substrate W toward the processing liquid that has been applied to the outer peripheral region 42 from the processing liquid supply unit 6. The gas spray unit 7, the first inert gas supply unit 8 for supplying an inert gas to the center of the upper surface of the substrate W held by the spin chuck 5, and the spin chuck 5 The second inert gas supply unit 9 for supplying an inert gas to the outer peripheral region 42 on the upper surface of the substrate W, and the outer peripheral region 43 on the lower surface of the substrate W held by the spin chuck 5, A third inert gas supply unit 10 for supplying an inert gas, a heater 11 for heating the outer peripheral region 43 on the lower surface of the substrate W held by the spin chuck 5, and a cylinder surrounding the spin chuck 5 In the form of a processing cup 12.

The processing chamber 4 includes a box-shaped partition wall 13, an FFU (fan filter unit) 14 as a blower unit that sends clean air from above the partition wall 13 into the partition wall 13 (corresponding to the processing chamber 4), and the partition wall 13. And an exhaust device (not shown) for exhausting the gas in the processing chamber 4 from the lower part of the chamber.
The FFU 14 is disposed above the partition wall 13 and attached to the ceiling of the partition wall 13. The FFU 14 sends clean air from the ceiling of the partition wall 13 into the processing chamber 4. The exhaust device is connected to the bottom of the processing cup 12 via an exhaust duct 15 connected in the processing cup 12, and sucks the inside of the processing cup 12 from the bottom of the processing cup 12. A downflow (downflow) is formed in the processing chamber 4 by the FFU 14 and the exhaust device.

  In this embodiment, the spin chuck 5 is a vacuum chuck. The spin chuck 5 sucks and supports the central portion of the lower surface of the substrate W. The spin chuck 5 has a spin shaft 16 extending in a vertical direction, a spin base 17 attached to the upper end of the spin shaft 16 and holding the substrate W by adsorbing the lower surface thereof in a horizontal posture, and the spin shaft 16. And a spin motor (substrate rotation unit) 18 having a rotation shaft coupled coaxially. The spin base 17 includes a horizontal circular upper surface 17 a having an outer diameter smaller than the outer diameter of the substrate W. In a state where the back surface of the substrate W is attracted and held by the spin base 17, the outer peripheral portion 41 of the substrate W protrudes outside the peripheral edge of the spin base 17. When the spin motor 18 is driven, the substrate W is rotated around the central axis of the spin shaft 16.

  The processing liquid supply unit 6 includes a processing liquid nozzle 19, a chemical liquid pipe 20 connected to the processing liquid nozzle 19, a chemical liquid valve 21 interposed in the chemical liquid pipe 20, and a rinsing liquid pipe connected to the processing liquid nozzle 19. 22, a rinsing liquid valve 23 interposed in the rinsing liquid piping 22, and a first nozzle moving mechanism 24 that moves the processing liquid nozzle 19. The treatment liquid nozzle 19 is, for example, a straight nozzle that discharges liquid in a continuous flow state. A chemical solution from a chemical solution supply source is supplied to the chemical solution pipe 20. The rinse liquid from the rinse liquid supply source is supplied to the rinse liquid pipe 22. When the chemical liquid valve 21 is opened with the rinsing liquid valve 23 closed, the continuous flow of chemical liquid supplied from the chemical liquid pipe 20 to the processing liquid nozzle 19 is set at the processing liquid discharge port set at the lower end of the processing liquid nozzle 19. It discharges from 19a (refer FIG. 3A). When the rinsing liquid valve 23 is opened with the chemical liquid valve 21 closed, the continuous flow of rinsing liquid supplied from the rinsing liquid pipe 22 to the processing liquid nozzle 19 is discharged from the processing liquid discharge port 19a. The first nozzle moving mechanism 24 moves the processing liquid nozzle 19 horizontally along a trajectory passing through the upper surface (for example, the central portion of the upper surface) of the substrate W in plan view. The first nozzle moving mechanism 24 includes a processing position where the processing liquid (chemical liquid and rinsing liquid) discharged from the processing liquid nozzle 19 is supplied to the outer peripheral region 42 on the upper surface of the substrate W, and the processing liquid nozzle 19 in plan view. The processing liquid nozzle 19 is moved between the retracted position retracted to the side of the spin chuck 5. In addition, the first nozzle moving mechanism 24 performs processing so that the processing liquid landing position 45 (see FIG. 3A) from the processing liquid nozzle 19 moves in the radial direction RD in the outer peripheral region 42 on the upper surface of the substrate W. The liquid nozzle 19 is moved.

  The chemical liquid is a liquid used for etching the substrate W or cleaning the substrate W, for example. The chemical solution is hydrofluoric acid, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, buffered hydrofluoric acid (BHF), dilute hydrofluoric acid (DHF), aqueous ammonia, hydrogen peroxide, organic acid (for example, citric acid, oxalic acid, etc.) ), An organic alkali (for example, TMAH: tetramethylammonium hydroxide, etc.), an organic solvent (for example, IPA (isopropyl alcohol), etc.), a surfactant, and a corrosion inhibitor may be used. . The rinsing liquid is, for example, deionized water (DIW), but is not limited to DIW, and is any one of carbonated water, electrolytic ionic water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm). There may be.

  The gas blowing unit 7 includes a gas nozzle 101, a first gas pipe 102 connected to the gas nozzle 101, a first gas valve 103 interposed in the first gas pipe 102, and a gas flow rate adjusting valve (blowing) A flow rate adjusting unit) 104 and a second nozzle moving mechanism 105 that moves the gas nozzle 101. Although not shown, the gas flow rate adjusting valve 104 includes a valve body having a valve seat therein, a valve body that opens and closes the valve seat, and an actuator that moves the valve body between an open position and a closed position. Including. The first gas pipe 102 is supplied with an inert gas from an inert gas supply source. When the first gas valve 103 is opened, the inert gas supplied from the first gas pipe 102 to the gas nozzle 101 is discharged from the gas discharge port 101a (see FIG. 3A) set at the lower end of the gas nozzle 101. Is done. The gas (inert gas) discharged from the gas discharge port 101a is sprayed from the inner side to the outer side in the radial direction RD toward the processing liquid deposited on the outer peripheral region 42 from the processing liquid supply unit 6. The second nozzle moving mechanism 105 has a processing position where the gas discharged from the gas nozzle 101 is supplied to the outer peripheral region 42 on the upper surface of the substrate W, and the gas nozzle 101 is retracted to the side of the spin chuck 5 in plan view. The gas nozzle 101 is moved between the retracted positions. The inert gas as the gas is, for example, nitrogen gas, but is not limited to nitrogen gas, and may be other inert gas such as air, helium gas, or argon gas.

  The second nozzle moving mechanism 105 moves the gas nozzle 101 horizontally along a locus passing through the upper surface (for example, the central portion of the upper surface) of the substrate in plan view. The second nozzle moving mechanism 105 includes a processing position where the processing liquid (chemical solution and rinsing liquid) discharged from the gas nozzle 101 is sprayed on the outer peripheral region 42 on the upper surface of the substrate W, and the gas nozzle 101 is in a plan view. The gas nozzle 101 is moved between the retracted position retracted to the side. The second nozzle moving mechanism 105 moves the gas nozzle 101 so that the gas blowing region 106 from the gas nozzle 101 moves in the radial direction RD in the outer peripheral region 42 on the upper surface of the substrate W.

  The first inert gas supply unit 8 includes a gas discharge nozzle 27 for supplying an inert gas to the central portion of the upper surface of the substrate W held by the spin chuck 5, and an inert gas supplied to the gas discharge nozzle 27. It includes a second gas pipe 28 to be supplied, a second gas valve 29 for opening and closing the second gas pipe 28, and a third nozzle moving mechanism 30 for moving the gas discharge nozzle 27. When the second gas valve 29 is opened at the processing position set above the central portion of the upper surface of the substrate W, the radial flow flows from the central portion toward the outer peripheral portion 41 by the inert gas discharged from the gas discharge nozzle 27. An airflow is formed above the substrate W.

  The second inert gas supply unit 9 supplies upper and outer peripheral gas nozzles 31 for discharging inert gas to the outer peripheral region 42 on the upper surface of the substrate W, and supplies the inert gas to the upper and outer peripheral gas nozzles 31. A third gas pipe 32, a third gas valve 33 that opens and closes the third gas pipe 32, and a fourth nozzle moving mechanism 34 for moving the upper outer peripheral gas nozzle 31. When the third gas valve 33 is opened at the processing position facing the outer peripheral region 42 on the upper surface of the substrate W, the upper outer peripheral gas nozzle 31 is directed to the blowing region of the outer peripheral region 42 on the upper surface of the substrate W in the radial direction RD. The inert gas is discharged from the inside to the outside and obliquely downward. Thereby, the processing width of the processing liquid in the outer peripheral region 42 on the upper surface of the substrate W can be controlled.

  The third inert gas supply unit 10 supplies an inert gas to the lower outer peripheral gas nozzle 36 and the lower outer peripheral gas nozzle 36 for discharging the inert gas to the outer peripheral region 43 on the lower surface of the substrate W. A fourth gas pipe 37 and a fourth gas valve 38 for opening and closing the fourth gas pipe 37. When the fourth gas valve 38 is opened at the processing position facing the outer peripheral region 43 on the lower surface of the substrate W, the lower outer peripheral gas nozzle 36 is directed in the radial direction RD with respect to the spraying region of the outer peripheral region 43 on the lower surface of the substrate W. An inert gas is discharged obliquely upward from the inside to the outside (for example, 45 ° with respect to the horizontal plane).

  The heater 11 is formed in an annular shape and has an outer diameter equivalent to the outer diameter of the substrate W. The heater 11 has an upper end surface facing the outer peripheral region 43 on the lower surface of the substrate W held by the spin chuck 5. The heater 11 is formed using ceramic or silicon carbide (SiC), and a heating source (not shown) is embedded therein. The heater 11 is heated by the heating source, and the heater 11 heats the substrate W. By heating the outer peripheral portion 41 of the substrate W from the lower surface side by the heater 11, the processing rate in the outer peripheral region 42 on the upper surface of the substrate W can be improved.

  The processing cup 12 is disposed outward (in a direction away from the rotation axis A1) from the substrate W held by the spin chuck 5. The processing cup 12 surrounds the side of the spin base 17. When the processing liquid is supplied to the substrate W while the spin chuck 5 is rotating the substrate W, the processing liquid supplied to the substrate W is shaken off around the substrate W. When the processing liquid is supplied to the substrate W, the upper end portion 12 a of the processing cup 12 opened upward is disposed above the spin base 17. Therefore, the processing liquid such as chemical liquid and water discharged around the substrate W is received by the processing cup 12. Then, the processing liquid received by the processing cup 12 is drained.

Further, the processing unit 2 includes a radial position sensor (each peripheral edge) for detecting a position in the radial direction RD (hereinafter simply referred to as “radial position”) of the peripheral edge of the substrate W held by the spin chuck 5. Position measurement unit) 47. The radial position sensor 47 detects the radial position of a predetermined measurement target position on the peripheral end surface 44 of the substrate W.
FIG. 3A is a cross-sectional view showing a state in which the processing liquid and the gas are discharged from the processing liquid nozzle 19 and the gas nozzle 101 arranged at the processing position, respectively. FIG. 3B is a cross-sectional view showing a state in which the processing liquid is discharged from the processing liquid nozzle 19 in the reference example. FIG. 3B is different from FIG. 3A in that the gas nozzle 101 is not disposed at the processing position (that is, the gas nozzle 101 is not provided).

  The substrate W is held by the spin chuck 5 (see FIG. 2) with the device formation surface facing upward. In a state where the processing liquid nozzle 19 is disposed at a processing position facing the outer peripheral region 42 on the upper surface of the substrate W, the chemical liquid valve 21 (see FIG. 2) and the rinsing liquid valve 23 (see FIG. 2) are selectively opened. Then, the treatment liquid nozzle 19 is disposed obliquely downward from the inside in the radial direction RD with respect to the liquid deposition position of the outer peripheral region 42 on the upper surface of the substrate W (hereinafter simply referred to as “liquid deposition position 45”). Rinse the rinse liquid. The processing liquid is discharged from the inner side of the radial direction RD toward the liquid landing position 45.

  The upper surface (device formation surface) of the substrate W is a device formation region in which semiconductor devices are formed except for the outer peripheral region 42. Since the processing liquid is discharged obliquely downward from the inner side of the radial direction RD from the processing liquid nozzle 19, it is possible to suppress the liquid splashing of the processing liquid to the center of the upper surface of the substrate W, which is a device formation region, to some extent. At this time, the discharge direction of the processing liquid from the processing liquid discharge port 19a is a direction along the radial direction RD and is a direction that is incident on the upper surface of the substrate W at a predetermined angle. The incident angle θ1 is, for example, about 30 ° to about 80 °, and preferably about 45 °.

  As shown in FIGS. 3A and 3B, the processing liquid that has reached the liquid landing position 45 forms a liquid film LF of the processing liquid around the liquid landing position 45, and the substrate W rotates relative to the liquid landing position 45. It flows in the direction R and toward the outside of the radial direction RD. Therefore, the processing liquid is held in an annular shape in the outer peripheral region 42 on the upper surface of the substrate W. The width W1 of the liquid film LF of the processing liquid at this time (hereinafter referred to as “liquid landing position liquid width W1”, the width of the processing liquid at the liquid landing position 45) is the processing width.

  As shown in FIG. 3A, the gas nozzle 101 is disposed at a processing position facing the outer peripheral region 42 on the upper surface of the substrate W. At this time, the gas discharge direction from the gas discharge port 101a of the gas nozzle 101 is a direction along the radial direction RD and is a direction that is incident on the upper surface of the substrate W at a predetermined angle. The incident angle θ2 is, for example, about 20 ° to about 80 °, and preferably about 45 °.

  In this state, when the first gas valve 103 (see FIG. 2) is opened, the gas nozzle 101 moves in the radial direction RD with respect to the spray region 106 located inside the radial direction RD with respect to the liquid deposition position 45. The gas is discharged diagonally downward from the inside to the outside. The gas discharged from the gas discharge port 101a of the gas nozzle 101 is blown to the blowing region 106, then flows toward the outside in the radial direction RD along the upper surface of the substrate W, and collides with the liquid film LF of the processing liquid. (Sprayed). As shown in FIG. 3A, the position of the inner peripheral end 301 of the liquid film LF of the processing liquid can be accurately controlled by blowing a gas from the inside in the radial direction RD to the liquid film LF of the processing liquid.

  When the gas is not sprayed as shown in FIG. 3B, the position of the inner peripheral end 301 of the liquid film LF of the processing liquid cannot be accurately controlled, and the liquid landing position liquid width W1 cannot be reduced. It is difficult to make the width about 1 mm or less. On the other hand, as shown in FIG. 3A, in the present embodiment, the position of the inner peripheral end 301 of the liquid film LF of the processing liquid can be controlled with high accuracy, so that the liquid landing position liquid width W1 can be adjusted to be narrow. Is possible. Specifically, the treatment width can be adjusted to a narrow width of several millimeters by performing such gas blowing.

Further, since gas is blown from the inside of the radial direction RD to the liquid film LF of the processing liquid (the processing liquid that has landed at the landing position 45), the processing liquid that has landed at the landing position 45 becomes the radial direction RD. It is possible to suppress scattering toward the inside. Thereby, it can suppress more effectively that a process liquid approachs into a device formation area.
Further, the liquid landing position liquid width W1 (width of the liquid film LF) is wide (that is, the position of the inner peripheral end 301 of the liquid film LF of the processing liquid) is set to the processing rotational speed (the rotational speed of the substrate W during processing). It depends. When the processing rotation speed is high, the centrifugal force due to the rotation of the substrate W increases, so that the liquid landing position liquid width W1 becomes narrow. On the other hand, when the processing rotation speed is low, the centrifugal force due to the rotation of the substrate W decreases, so that the liquid landing position liquid width W1 becomes wide.

  FIG. 4 is a plan view of the gas nozzle 101 in a state of being disposed at the processing position. In FIG. 4, the illustration of the treatment liquid nozzle 19 is omitted. On the lower surface of the gas nozzle 101, an arc slit-shaped gas discharge port 101a is formed in a plan view. The gas discharge port 101a has a predetermined width W2 in the circumferential direction of the substrate W. In a state where the gas nozzle 101 is disposed at the processing position, the gas discharged from the gas discharge port 101a is blown onto the upper surface of the substrate W to form a strip shape along the outer peripheral region 42 of the substrate W (in this embodiment, an arc shape). Make. When the rotation speed of the substrate W is slow, the centrifugal force acting on the outer peripheral region 42 on the upper surface of the substrate W is small, so that the processing liquid that has landed at the liquid landing position 45 (see FIG. 3A) is directed in the rotation direction R. There is also a risk of spreading inward in the flow process. However, in this embodiment, since the spray region 106 has a strip shape (arc shape) along the outer peripheral region 42 of the substrate W, the spread of the processing liquid to the inside of the substrate W can be more effectively suppressed. .

FIG. 5 is a schematic diagram showing a state where the substrate W is held by the spin chuck 5 in an eccentric state. FIG. 6 is a schematic diagram showing a state where the substrate W is held by the spin chuck 5 in an eccentric state. FIG. 7 is a plan view showing the processing width of the outer peripheral region 42 on the upper surface of the substrate W in the reference processing example.
The spin chuck 5 is of a type that supports the central portion of the substrate W. Such a type of spin chuck does not support the outer peripheral portion 41 of the substrate W. Therefore, in the holding state of the substrate W, as shown in FIGS. 5 and 6, the center of the substrate W is deviated from the rotation axis A1 of the substrate W by the spin chuck 5 (that is, the substrate W is eccentric with respect to the spin chuck 5). There is a risk.

  In the processing on the outer peripheral portion of the substrate W, the substrate W is rotated about the rotation axis A1, and therefore, if the substrate W is eccentric with respect to the spin chuck 5, the substrate W is rotated according to the rotation angle position of the substrate W. Out of the peripheral ends, the peripheral end of the circumferential position corresponding to the processing position of the processing liquid nozzle 19 (the peripheral end of the peripheral position where the processing liquid nozzle 19 is disposed. ") And the rotation axis A1 changes. When the processing liquid nozzle 19 is in a stationary posture with respect to the spin chuck 5, the distance between the processing liquid landing position 45 and the arrangement position peripheral end 46 varies with the rotation angle position of the substrate W. In other words, the radial position of the arrangement position peripheral end 46 with respect to the rotation axis A <b> 1 changes with the rotation angle position of the substrate W.

As a result, as shown in FIG. 7, the processing width of the outer peripheral region 42 on the upper surface of the substrate W varies at each position in the circumferential direction. If there is a large variation in processing width, the central device area must be set narrower in anticipation of this. Therefore, high accuracy is required for the processing width.
FIG. 8 is a block diagram for explaining the electrical configuration of the main part of the substrate processing apparatus 1.

  The control device 3 is configured using, for example, a microcomputer. The control device 3 includes an arithmetic unit 51 such as a CPU, a fixed memory device (not shown), a storage unit 52 such as a hard disk drive, an output unit 53 and an input unit (not shown). The storage unit 52 stores a program executed by the arithmetic unit 51.

  The storage unit 52 includes a nonvolatile memory that can electrically rewrite data. The storage unit 52 stores a recipe that defines the content of each process for the substrate W, and a radial direction with respect to the rotation axis A1 at each circumferential end position in the circumferential direction of the substrate W held by the spin chuck 5. Each circumferential end radial position storage unit 59 that stores position information regarding the position of the RD (hereinafter referred to as “each circumferential end radial direction position”), the rotation speed of the substrate W, and the gas blowing region 106 (FIG. 3A, etc.) And an information storage unit (first information storage unit) 55 that stores a rotation speed-spraying region position correspondence table 107 (first correspondence relationship defining information; see FIG. 9) that defines a correspondence relationship with the position.

  The control device 3 includes a spin motor 18, first to fourth nozzle moving mechanisms 24, 105, 30, 34, a heating source for the heater 11, a chemical liquid valve 21, a rinse liquid valve 23, a first gas valve 103, a first Two gas valves 29, a third gas valve 33, a fourth gas valve 38, a flow rate adjusting valve 104, and the like are connected as control targets. The control device 3 controls operations of the spin motor 18, the first to fourth nozzle moving mechanisms 24, 105, 30, 34 and the heater 11. The control device 3 opens and closes the valves 21, 23, 103, 29, 33, 38 and the like. Further, the control device 3 adjusts the opening degree of the flow rate adjustment valve 104.

Further, the detection output of the radial position sensor 47 is input to the control device 3.
FIG. 9 is a diagram for explaining the rotation speed / spraying area position correspondence table 107 stored in the information storage unit 55.
The rotational speed-blowing area position correspondence table 107 defines the correspondence between the rotational speed (processing rotational speed) of the substrate W and the position in the radial direction RD of the spray area 106 (see FIG. 3A) corresponding to each rotational speed. Has been. The “position of the spray region 106” defined by the rotational speed-spray region position correspondence table 107 may be the position information itself in the radial direction RD of the processing position of the gas nozzle 101, or the first position for driving the gas nozzle 101. The driving value of the motor constituting the second nozzle moving mechanism 105 may be a driving value corresponding to the processing position of the gas nozzle 101.

  Generally, as the rotation speed of the substrate W becomes slower, the liquid landing position liquid width W1 tends to become wider. Further, as the radial position RD position of the processing position (reference processing position) of the gas nozzle 101 with respect to each rotation speed goes outward in the radial direction RD, the inner peripheral end 301 of the processing liquid film LF is changed in the radial direction. The pushing force toward the outside of the RD increases. In order to prevent the liquid landing position liquid width W1 from widening, the force that pushes the inner peripheral end 301 of the processing liquid film LF outward in the radial direction RD increases as the rotation speed of the substrate W decreases. In other words, the rotation speed-spraying area position correspondence table 107 is defined so that the spraying area 106 moves outward in the radial direction RD as the rotation speed of the substrate W decreases.

  FIG. 10 is a flowchart for explaining a first substrate processing example executed by the processing unit 2. FIG. 11 is a flowchart for explaining the contents of each circumferential end radial direction position measuring step (S4). FIG. 12 is a flowchart for explaining the contents of the outer peripheral portion processing steps (S5, S6). 13 and 14 are schematic diagrams for explaining the contents of the outer peripheral portion processing steps (S5, S6). 15A and 15B are diagrams schematically showing the state of the processing liquid nozzle 19 and the gas nozzle 101 in the outer peripheral portion processing step (S5, S6). FIG. 16 is a plan view showing the processing width of the outer peripheral region 42 on the upper surface of the substrate W in the first substrate processing example.

This first substrate processing example will be described with reference to FIGS. 1, 2, 3A, 3B, and FIGS. Reference is made to FIGS.
First, an unprocessed substrate W is carried into the processing chamber 4 (S1 in FIG. 10). Specifically, when the hand H of the transfer robot CR holding the substrate W enters the inside of the processing chamber 4, the substrate W is delivered to the spin chuck 5 with the device formation surface facing upward. .

Thereafter, when the central portion of the lower surface of the substrate W is sucked and supported, the substrate W is held by the spin chuck 5 (substrate holding step; S2 in FIG. 10). In this embodiment, the centering mechanism is not used to align the substrate W with the spin chuck 5.
After the substrate W is held on the spin chuck 5, the control device 3 controls the spin motor 18 to start rotating the substrate W (S3 in FIG. 10).

Next, the control device 3 executes each circumferential end radial position measurement step (S4 in FIG. 10) for measuring each circumferential end radial position of the substrate W held on the spin chuck 5. Each circumferential end radial direction position measuring step (S4) will be described with reference to FIG.
In each peripheral end radial direction position measuring step (S4), the control device 3 increases the rotation speed of the substrate W to a predetermined measurement rotation speed (a speed slower than the liquid processing speed described below, for example, about 50 rpm), The measured rotation speed is maintained (S11 in FIG. 11). When the rotation of the substrate W reaches the measured rotational speed (YES in S11), the control device 3 starts measuring the circumferential end radial direction position using the radial position sensor 47 (S12 in FIG. 11). Specifically, the control device 3 controls the spin motor 18 to rotate the substrate W about the rotation axis A1, and the radial position sensor 47 causes a predetermined measurement target position on the peripheral end surface 44 of the substrate W. The position in the radial direction is detected. After the start of detection by the radial position sensor 47, when the substrate W has been rotated at least once (360 °) (YES in S13 of FIG. 11), it is assumed that all the circumferential end radial positions have been detected (YES). Is finished (S14 in FIG. 11). Thereby, the eccentric state of the substrate W with respect to the spin chuck 5 can be detected. The control device 3 calculates information related to the reciprocating movement of the liquid deposition position 45 (for example, the amplitude, period and phase of the reciprocating movement) based on the measured circumferential end radial direction positions (S15 in FIG. 11). The calculated information is stored in each circumferential end radial direction position storage unit 59 (S16 in FIG. 11). Thereafter, each circumferential end radial direction position measurement step (S4) ends. The execution time of each circumferential end radial direction position measurement step (S4) is, for example, about 5 seconds.

  After the end of each peripheral end radial direction position measuring step (S4), the control device 3 then processes the outer peripheral portion 41 of the substrate W using a chemical solution (outer peripheral portion processing step, FIG. 10). S5) is executed. The outer peripheral chemical liquid processing step (S5) is performed in a state where the rotation of the substrate W is at a predetermined rotation speed (a predetermined speed of about 300 rpm to about 1300 rpm). Further, in parallel with the outer peripheral chemical liquid processing step (S5), the control device 3 sets the chemical liquid landing position 45 in the outer peripheral region 42 on the upper surface of the substrate W to the arrangement position peripheral edge 46 associated with the rotation angle position of the substrate W. The liquid landing position reciprocating process is performed in which the reciprocating movement in the radial direction RD is performed following the change in the radial position. In parallel with the outer peripheral chemical solution processing step (S5), the control device 3 performs a spray region reciprocating step for reciprocating the spray region 106 along with the radial direction RD movement of the chemical liquid landing position 45. To do. In this specification, “the reciprocating movement of the liquid landing position 45” and “the reciprocating movement of the spray region 106” are not reciprocating movements based on the substrate W, but are objects that are stationary (for example, the processing chamber 4). This means reciprocal movement based on the partition wall 13).

The outer peripheral chemical liquid processing step (S5) will be described with reference to FIG.
In the outer peripheral chemical liquid processing step (S5), the control device 3 controls the spin motor 18 to change the rotation speed of the substrate W to a predetermined processing rotational speed (that is, the rotation of the substrate W in the outer peripheral chemical liquid processing step (S5)). Speed) (S30 in FIG. 12). Further, when the processing liquid nozzle 19 is in the retracted position, the control device 3 controls the first nozzle moving mechanism 24 to bring the processing liquid nozzle 19 to the upper processing position (the position shown in FIG. 3A). It arrange | positions (S31 of FIG. 12).

  In addition, the arithmetic unit 51 of the control device 3 refers to the rotation speed / spraying area position correspondence table 107 (see FIG. 9) stored in the information storage unit 55 and sets the gas nozzle 101 corresponding to the processing rotation speed. A processing position (position in the radial direction RD) is determined (S32 in FIG. 12). And the control apparatus 3 arrange | positions the gas nozzle 101 in the determined processing position (position of radial direction RD) (S33 of FIG. 12).

  When the rotation of the substrate W reaches the processing rotational speed, the control device 3 opens the chemical liquid valve 21 while closing the rinsing liquid valve 23, thereby starting the discharge of the chemical liquid from the processing liquid discharge port 19a of the processing liquid nozzle 19 (FIG. 12 S34). Moreover, the control apparatus 3 starts discharge of gas from the gas discharge port 101a of the gas nozzle 101 by opening the 1st gas valve 103 (S34 of FIG. 12). In the state before the start of gas discharge, the flow rate adjustment valve 104 is adjusted to a predetermined opening degree. As a result, as shown in FIG. 3A, the chemical liquid is deposited on the outer peripheral region 42 of the upper surface of the substrate W to form a chemical liquid film LF, and the chemical liquid film LF is gas from the inside in the radial direction RD. Is sprayed. Thereby, the landing position liquid width W1 can be favorably controlled.

The gas discharge start from the gas nozzle 101 may be started prior to the chemical liquid discharge start from the processing liquid nozzle 19.
As shown in FIGS. 13 and 14, the control device 3 executes the above-described liquid landing position reciprocating step (S <b> 35 in FIG. 12). Specifically, the control device 3 is based on information (amplitude, period and phase (measurement result of each circumferential end radial direction position measurement step (S4))) stored in each circumferential end radial position storage unit 59. Thus, the treatment liquid nozzle 19 is moved so that the liquid deposition position 45 moves with the same amplitude, the same cycle, and the same phase as the position change of the arrangement position peripheral edge 46.

Further, the control device 3 executes the spray region reciprocating step (S35) in parallel with the liquid landing position reciprocating step. As shown in FIGS. 15A and 15B, with the rotation of the eccentric substrate W, the arrangement position peripheral edge 46 is positioned by the solid line shown in FIG. 15A (the position shown by the broken line in FIG. 15B), and the solid line in FIG. 15B. It is moving between the positions indicated by. The control device 3 reciprocates the gas nozzle 101 in synchronization with the movement of the processing liquid nozzle 19 while keeping the distance in the radial direction RD between the liquid deposition position 45 and the spray region 106 constant. Thereby, the liquid landing position liquid width W1 can be maintained at a constant width corresponding to the rotation speed of the substrate W, without depending on the reciprocating movement of the liquid landing position 45. As a result, as shown in FIG. 16, the uniformity of the processing width in the outer peripheral region 42 on the upper surface of the substrate W can be kept high. When a predetermined period has elapsed from the start of the discharge of the chemical solution (YES in S36 of FIG. 12), The control device 3 closes the chemical liquid valve 21 and the first gas valve 103, respectively. Thereby, the discharge of the chemical solution from the treatment liquid nozzle 19 is stopped (terminated), and the discharge of the gas from the gas nozzle 101 is stopped (terminated) (S37 in FIG. 12).

  In the outer peripheral chemical solution processing step (S 5), the heat source of the heater 11 is turned on, and the outer peripheral region 43 on the lower surface of the substrate W is heated by the heater 11. This increases the processing speed of the outer peripheral chemical processing. Further, in the outer peripheral chemical liquid processing step (S5), a radial airflow that flows from the central portion toward the outer peripheral portion 41 is formed above the substrate W by the inert gas discharged from the gas discharge nozzle 27 disposed at the processing position. Is done. This radial airflow protects the central portion of the upper surface of the substrate W, which is a device formation region. Further, in the outer peripheral chemical liquid processing step (S5), in the outer peripheral region 42 on the upper surface of the substrate, the substrate is moved from the upper outer peripheral gas nozzle 31 located at the processing position set at the circumferential position different from the processing position of the gas nozzle 101. An inert gas is blown to the blowing position of the outer peripheral region 42 on the upper surface of W. By spraying this inert gas, the treatment width of the chemical solution in the outer peripheral region 42 on the upper surface of the substrate W can be controlled at a plurality of positions in the circumferential direction of the substrate W. In the outer peripheral chemical liquid processing step (S5), an inert gas is sprayed from the lower outer peripheral gas nozzle 36 located at the processing position to the spray position of the outer peripheral region 43 on the lower surface of the substrate W. By blowing the inert gas, it is possible to prevent the chemical liquid from flowing into the lower surface of the substrate W.

  After the end of the outer peripheral chemical liquid processing step (S5), the control device 3 then processes the outer peripheral portion 41 of the substrate W using the rinse liquid (outer peripheral portion processing step; S6 in FIG. 10). ). The outer peripheral rinse liquid processing step (S6) is performed in a state where the rotation of the substrate W is at a predetermined rotation speed (a predetermined speed of about 300 rpm to about 1300 rpm). In parallel with the outer peripheral portion rinsing liquid processing step (S6), the control device 3 sets the rinsing liquid landing position 45 in the outer peripheral region 42 on the upper surface of the substrate W at the arrangement position around the rotation angle position of the substrate W. A liquid landing position reciprocating step is executed in which the end 46 is moved back and forth in the radial direction RD following the change in the radial position of the end 46. The outer peripheral rinse liquid processing step (S6) will be described with reference to FIG.

  In the outer peripheral portion rinsing liquid processing step (S6), the control device 3 controls the spin motor 18 to change the rotational speed of the substrate W to a predetermined processing rotational speed (that is, the substrate W in the outer peripheral rinsing liquid processing step (S6)). (S30). Further, when the processing liquid nozzle 19 is in the retracted position, the control device 3 controls the first nozzle moving mechanism 24 to bring the processing liquid nozzle 19 to the upper processing position (the position shown in FIG. 3A). Arrange (S31).

  In addition, the arithmetic unit 51 of the control device 3 refers to the rotation speed / spraying area position correspondence table 107 (see FIG. 9) stored in the information storage unit 55 and sets the gas nozzle 101 corresponding to the processing rotation speed. A processing position (position in the radial direction RD) is determined (S32). And the control apparatus 3 arrange | positions the gas nozzle 101 in the determined process position (position of radial direction RD) (S33).

  When the rotation of the substrate W reaches the processing rotational speed, the control device 3 opens the rinsing liquid valve 23 while closing the chemical liquid valve 21 to start discharging the rinsing liquid from the processing liquid discharge port 19a of the processing liquid nozzle 19 ( S34). Moreover, the control apparatus 3 starts discharge of gas from the gas discharge port 101a of the gas nozzle 101 by opening the 1st gas valve 103 (S34). As a result, as shown in FIG. 3A, the rinsing liquid is deposited on the outer peripheral region 42 of the upper surface of the substrate W to form a rinsing liquid film LF, and the inner side of the chemical liquid film LF in the radial direction RD. Gas is blown from. Thereby, the landing position liquid width W1 can be favorably controlled.

  Further, as shown in FIGS. 13 and 14, the control device 3 executes the liquid landing position reciprocating step (S 33). Further, as shown in FIGS. 15A and 15B, the control device 3 executes the spray region reciprocating step (S33) in parallel with the liquid landing position reciprocating step. Since the liquid landing position reciprocating step and the spraying region reciprocating step have already been described in the outer peripheral chemical liquid processing step (S5), description thereof will be omitted.

When a predetermined period has elapsed from the start of discharge of the rinse liquid (YES in S36), the control device 3 closes the rinse liquid valve 23 and closes the first gas valve 103. Thereby, the discharge of the rinse liquid from the treatment liquid nozzle 19 is stopped (terminated), and the discharge of the gas from the gas nozzle 101 is stopped (terminated) (S37).
Further, in the outer peripheral portion rinsing liquid processing step (S6), a radial airflow flowing from the central portion toward the outer peripheral portion 41 is formed above the substrate W by the inert gas discharged from the gas discharge nozzle 27 located at the processing position. Is done. In the outer peripheral rinse liquid treatment step (S6), an inert gas is blown from the upper outer peripheral gas nozzle 31 located at the processing position to the spray position of the outer peripheral region 42 on the upper surface of the substrate W. In the outer peripheral rinse liquid treatment step (S6), an inert gas is blown from the lower outer peripheral gas nozzle 36 located at the processing position to the spray position of the outer peripheral region 43 on the lower surface of the substrate W. In the outer peripheral rinse treatment step (S6), the heat source of the heater 11 is turned on, and the outer peripheral region 43 on the lower surface of the substrate W may be heated by the heater 11 or may not be heated.

Thereafter, the control device 3 controls the first nozzle moving mechanism 24 to return the processing liquid nozzle 19 to the retracted position on the side of the spin chuck 5.
Next, spin drying (S7 in FIG. 10) for drying the substrate W is performed. Specifically, the control device 3 controls the spin motor 18 to accelerate the substrate W to a drying rotation speed (for example, several thousand rpm) larger than the rotation speed in each of the processing steps S2 to S6, and at the drying rotation speed. The substrate W is rotated. Further, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the outer periphery of the substrate W is shaken off around the substrate W. In this way, the liquid is removed from the outer peripheral portion of the substrate W, and the outer peripheral portion of the substrate W is dried.

When a predetermined period has elapsed since the start of the high-speed rotation of the substrate W, the control device 3 controls the spin motor 18 to stop the rotation of the substrate W by the spin chuck 5.
Thereafter, the substrate W is unloaded from the processing chamber 4 (S8 in FIG. 10). Specifically, the control device 3 causes the hand of the transfer robot CR to enter the processing chamber 4. Then, the control device 3 holds the substrate W on the spin chuck 5 on the hand of the transfer robot CR. Thereafter, the control device 3 retracts the hand of the transfer robot CR from the processing chamber 4. Thereby, the processed substrate W is unloaded from the processing chamber 4.

  As described above, according to the first embodiment, the gas is blown from the inside in the radial direction RD of the substrate W toward the processing liquid that has landed on the liquid deposition position 45 of the outer peripheral region 42 on the upper surface of the substrate W. The position of the inner peripheral end 301 of the liquid film LF of the processing liquid depends on the rotation speed of the substrate W. By adjusting the position of the gas blowing region 106 on the substrate W according to the processing rotation speed of the substrate W (execution of the inner peripheral end position adjusting step), the position of the inner peripheral end 301 of the liquid film LF of the processing liquid is It can adjust to the position corresponding to the process rotational speed in an outer peripheral part process process (S5, S6). Then, by adjusting the position of the inner peripheral end 301 of the liquid film LF of the processing liquid, it is possible to adjust the liquid landing position liquid width W1 to a width suitable for the processing rotation speed. Therefore, the liquid landing position liquid width W1 can be precisely controlled regardless of the rotation speed of the substrate W. Thereby, the processing width in the outer peripheral region 42 on the upper surface of the substrate W can be precisely controlled regardless of the rotation speed of the substrate W.

  Further, by changing the position of the spray region 106 in the radial direction RD, the position of the inner peripheral end 301 of the liquid film LF of the processing liquid can be adjusted to a position corresponding to the processing rotational speed. The position of the spray region 106 in the radial direction RD directly affects the position of the inner peripheral end 301 of the liquid film LF of the processing liquid, and greatly affects the position of the inner peripheral end 301 of the liquid film LF of the processing liquid. . Therefore, the position of the inner peripheral end 301 of the liquid film LF of the processing liquid can be changed more effectively by changing the position of the gas spray region. Thereby, the landing position liquid width W1 can be controlled more precisely.

FIG. 17A and FIG. 17B are diagrams schematically illustrating states of the processing liquid nozzle 19 and the gas nozzle 101 in the outer peripheral portion processing step (S5, S6) of the second substrate processing example according to the first embodiment.
The second substrate processing example is different from the first substrate processing example described above in that the liquid landing position reciprocating step (reciprocating movement of the processing liquid nozzle 19) is performed in the outer peripheral portion processing step (S5, S6). Instead, the inner peripheral end 301 of the liquid film LF of the processing liquid is reciprocated following the position change of the arrangement position peripheral end 46 by the spray region reciprocating step. With the rotation of the eccentric substrate W, the arrangement position peripheral edge 46 moves between the position indicated by the solid line in FIG. 17A (the position indicated by the broken line in FIG. 17B) and the position indicated by the solid line in FIG. 17B. . In this case, the control device 3 stores information (amplitude, period, and phase (measurement results of each circumferential end radial position measurement step (S4)) stored in each circumferential end radial position storage unit 59 (see FIG. 8). ), The gas nozzle 101 is reciprocated so that the inner peripheral end 301 of the liquid film LF of the processing liquid moves with the same amplitude, the same period, and the same phase as the position change of the arrangement position peripheral end 46. Accordingly, the distance between the inner peripheral end 301 of the processing liquid film LF and the arrangement position peripheral end 46 can be kept constant without moving the processing liquid nozzle 19. As a result, the uniformity of the processing width in the outer peripheral region 42 on the upper surface of the substrate W can be kept high regardless of the eccentric state of the substrate W.

Next, a second embodiment will be described. FIG. 18 is a view for explaining a rotation speed / spraying flow rate correspondence table (second correspondence relationship defining information) 207 stored in the information storage portion (second information storage portion) 55 according to the second embodiment. FIG.
The rotational speed-spraying flow rate correspondence table 207 defines the correspondence between the rotational speed (processing rotational speed) of the substrate W and the spraying flow rate of the gas sprayed from the gas nozzle 101 to the spraying region 106 corresponding to each rotational speed. Has been. The “gas spraying flow rate” defined by the rotational speed-blowing flow rate correspondence table 207 may be the spraying flow rate itself or the opening degree of the flow rate adjusting valve 104 corresponding to the spraying flow rate.

Generally, as the rotation speed of the substrate W becomes slower, the liquid landing position liquid width W1 tends to become wider. Further, the inner peripheral end 301 of the liquid film LF of the processing liquid is pressed outward in the radial direction RD as the flow rate of the gas sprayed to the spray region 106 increases. In order to prevent the liquid landing position liquid width W1 from widening, the force that pushes the inner peripheral end 301 of the processing liquid film LF outward in the radial direction RD increases as the rotation speed of the substrate W decreases. In other words, the rotational speed-spraying flow rate correspondence table 207 is defined so that the gas spraying flow rate increases as the rotational speed of the substrate W decreases.
FIG. 19 is a flowchart for explaining the contents of the outer peripheral portion processing steps (S5, S6) according to the third substrate processing example according to the second embodiment. The third substrate processing example according to the second embodiment is different from the first substrate processing example according to the first embodiment in the outer peripheral chemical solution processing step (S5). The outer peripheral chemical liquid processing step (S5) according to the third substrate processing example will be described with reference to FIG. 2, FIG. 8, and FIG. A description of the outer peripheral rinse liquid processing step (S6) according to the third substrate processing example will be omitted.

  In the outer peripheral chemical liquid processing step (S5), the control device 3 sets the rotational speed of the substrate W to the processing rotational speed (S40). When the processing liquid nozzle 19 is in the retracted position, the control device 3 places the processing liquid nozzle 19 at the processing position on the upper surface (the position shown in FIG. 3A) (S31). S40 and S41 correspond to S30 and S31 in FIG. 12, respectively. Further, the control device 3 arranges the gas nozzle 101 at a predetermined processing position.

  In addition, the arithmetic unit 51 of the control device 3 refers to the rotational speed-spraying flow rate correspondence table 207 (see FIG. 18) stored in the information storage unit 55, and the gas spraying flow rate corresponding to the processing rotational speed (see FIG. 18). The discharge flow rate from the gas nozzle 101 is determined (S42). And the control apparatus 3 controls the gas flow rate adjustment valve 104, and adjusts the opening degree of the gas flow rate adjustment valve 104 so that the determined blowing flow rate is discharged from the gas discharge port 101a (S43).

  When the rotation of the substrate W reaches the processing rotational speed, the control device 3 opens the chemical liquid valve 21 while closing the rinsing liquid valve 23, thereby starting the discharge of the chemical liquid from the processing liquid discharge port 19a of the processing liquid nozzle 19 (S44). ). Moreover, the control apparatus 3 starts discharge of gas from the gas discharge port 101a of the gas nozzle 101 by opening the 1st gas valve 103 (S44). As a result, as shown in FIG. 3A, the chemical liquid is deposited on the outer peripheral region 42 of the upper surface of the substrate W to form a chemical liquid film LF, and the chemical liquid film LF is gas from the inside in the radial direction RD. Is sprayed. Thereby, the landing position liquid width W1 can be favorably controlled.

  As shown in FIG. 13 and FIG. 14, the control device 3 executes a liquid landing position reciprocating step (S45). The liquid landing position reciprocating process (S45) is a process equivalent to the liquid landing position reciprocating process of S35 in FIG. Further, the control device 3 executes the spray region reciprocating step (S45) in parallel with the liquid landing position reciprocating step. The spraying area reciprocating process (S45) is also a process equivalent to the spraying area reciprocating process of S35 in FIG.

When a predetermined period has elapsed from the start of the discharge of the chemical liquid (YES in S46), control device 3 closes chemical liquid valve 21 and first gas valve 103, respectively. Thereby, the discharge of the chemical solution from the treatment liquid nozzle 19 is stopped (terminated), and the discharge of the gas from the gas nozzle 101 is stopped (terminated) (S47).
As described above, according to the second embodiment, the inner peripheral edge 301 of the liquid film LF of the processing liquid is adjusted by adjusting the spraying flow rate of the gas sprayed to the spraying region 106 according to the processing rotational speed of the substrate W. Can be adjusted to a position corresponding to the processing rotational speed in the outer peripheral portion processing step (S5, S6). By adjusting the position of the inner peripheral end 301 of the liquid film LF of the processing liquid, it is also possible to adjust the liquid landing position liquid width W1 to a width suitable for the processing rotation speed. Therefore, the liquid landing position liquid width W1 can be precisely controlled regardless of the rotation speed of the substrate W. Thereby, the processing width in the outer peripheral region 42 on the upper surface of the substrate W can be precisely controlled regardless of the rotation speed of the substrate W.

20A and 20B are diagrams schematically illustrating the states of the processing liquid nozzle 19 and the gas nozzle 101 in the outer peripheral portion processing step (S5, S6) of the fourth substrate processing example according to the second embodiment.
The fourth substrate processing example is different from the above-described third substrate processing example in the outer peripheral portion processing steps (S5, S6) and the liquid landing position reciprocating step (reciprocating movement of the processing liquid nozzle 19) and spraying. By changing the flow rate of the gas blown from the gas nozzle 101 without performing the region reciprocating step, the inner peripheral end 301 of the treatment liquid film LF is reciprocated following the position change of the arrangement position peripheral end 46. It is a point that is moved. With the rotation of the eccentric substrate W, the arrangement position peripheral edge 46 moves between the position indicated by the solid line in FIG. 20A (the position indicated by the broken line in FIG. 20B) and the position indicated by the solid line in FIG. 20B. . In this case, the control device 3 stores information (amplitude, period, and phase (measurement results of each circumferential end radial position measurement step (S4)) stored in each circumferential end radial position storage unit 59 (see FIG. 8). ), The gas flow rate adjustment valve 104 is controlled so that the inner peripheral end 301 of the liquid film LF of the processing liquid moves with the same amplitude, the same period, and the same phase as the position change of the arrangement position peripheral end 46. The flow rate of the gas discharged from the gas discharge port 101a of the gas nozzle 101 is adjusted. Accordingly, the distance between the inner peripheral end 301 of the processing liquid film LF and the arrangement position peripheral end 46 can be kept constant without moving the processing liquid nozzle 19. As a result, the uniformity of the processing width in the outer peripheral region 42 on the upper surface of the substrate W can be kept high regardless of the eccentric state of the substrate W. Therefore, the distance between the inner peripheral edge 301 of the treatment liquid film LF and the arrangement position peripheral edge 46 can be kept constant.

As mentioned above, although two embodiment of this invention was described, this invention can also be implemented with another form.
For example, the control of the position of the inner peripheral end 301 of the liquid film LF of the processing liquid (inner peripheral end position adjusting process) by blowing the gas to the liquid film LF of the processing liquid is performed in the outer peripheral processing steps (S5, S6). The process is executed only when the processing rotation speed of the substrate W is less than a predetermined speed (for example, 1300 rpm). When the processing rotation speed is equal to or higher than the predetermined speed (for example, 1300 rpm), the liquid film LF of the processing liquid is used. You may make it not perform the spraying of the gas with respect to the inner peripheral end 301. When the processing rotational speed is less than 1300 rpm, the processing liquid that has reached the liquid landing position 45 may swell at the liquid landing position 45 and spread inside the substrate W. On the other hand, when the processing rotation speed is 1300 rpm or more, the processing liquid that has reached the liquid landing position 45 does not spread inside the substrate W. Therefore, you may perform the spraying of the gas with respect to the inner peripheral end 301 of the liquid film LF of a process liquid only when needed.

  Further, in each of the above-described embodiments, the information storage unit 55 has been described as storing the rotational speed-blowing area position correspondence table 107 and the rotational speed-blowing flow rate correspondence table 207. However, the processing rotational speed and the position of the spray area 106 are described. And a map representing the correspondence relationship with the flow rate of the gas blown to the spray region 106 are stored in the information storage unit 55, and based on this map, the gas with respect to the inner peripheral end 301 of the liquid film LF of the processing liquid is stored. May be executed.

In each of the above-described embodiments, the gas discharge port 101a may be configured using, for example, a linear slit instead of the arc-shaped slit. Further, the gas discharge port 101a may be configured by a plurality of discharge holes.
In addition, the gas nozzle 101 may be integrally provided on the outer peripheral portion of a facing member (for example, the gas discharge nozzle 27 (see FIG. 2)) facing the central portion of the upper surface of the substrate W with a space therebetween.

In the inner peripheral end position adjusting step, both the position of the gas blowing region 106 and the blowing flow rate may be adjusted.
For example, instead of each circumferential end radial position measurement step (S4), each circumferential end height position that is a height position at each circumferential end position in the circumferential direction of the substrate W is measured as the circumferential end position measurement step. A peripheral edge height position measurement process may be performed. In this case, a height position sensor (position sensor) for detecting the height position of the peripheral edge of the substrate W held by the spin chuck 5 is provided, and based on the detection output of the height position sensor, Each peripheral edge height position may be measured. Further, the position is not limited to the position sensor, and each peripheral end position in the circumferential direction of the substrate W may be measured using a CCD camera.

In each of the above-described embodiments, the case where the substrate processing apparatus is a device that processes the disk-shaped substrate W has been described. However, it is sufficient that the substrate W has an arc shape at least at a part of the peripheral edge thereof. It does not necessarily have to be a perfect circle.
Further, as the nozzle driving mechanism, a scan type that moves the processing liquid nozzle 19 and the gas nozzle 101 while drawing an arc locus is taken as an example, but the processing liquid nozzle 19 and the gas nozzle 101 are moved linearly. A direct acting type may be employed.

  In each of the above-described embodiments, in order to make the processing width in the outer peripheral region 42 on the upper surface of the substrate W uniform regardless of the eccentric state of the substrate W, the arrangement position peripheral edge in the outer peripheral processing step (S5, S6). Following the change in position 46, the landing position 45 of the processing liquid and the inner peripheral end 301 of the liquid film LF of the processing liquid are reciprocated. However, the present invention is not limited to the reciprocating movement of the treatment liquid landing position 45 and the inner peripheral end 301 of the treatment liquid film LF. That is, for the purpose of adjusting the processing width to a narrow width, the liquid landing position liquid width W1 may be narrowed by blowing gas from the inside of the radial direction RD to the liquid film LF of the processing liquid.

Further, the processing liquid nozzle 19 has been described as an example that discharges both the chemical liquid and the rinsing liquid. However, the processing liquid nozzle (chemical liquid nozzle) for discharging the chemical liquid and the processing for discharging the rinsing liquid are described. A liquid nozzle (rinse liquid nozzle) may be provided individually.
In addition, various design changes can be made within the scope of matters described in the claims.

1: substrate processing device 2: processing unit 3: control device 5: spin chuck (substrate holding unit)
18: Spin motor (substrate rotation unit)
19: Treatment liquid nozzle 41: Outer peripheral portion 45: Liquid landing position 46: Arrangement position circumferential edge 47: Radial position sensor (each circumferential edge position measurement unit)
55: Information storage unit (first information storage unit, second information storage unit)
101: Gas nozzle 101a: Gas discharge port 104: Gas flow rate adjusting valve (Blowing flow rate adjusting unit)
105: Second nozzle moving mechanism (gas nozzle driving unit)
106: Spray area 107: Rotational speed-spray area position correspondence table (first correspondence relationship defining information)
207: Rotational speed-spraying flow rate correspondence table (corresponding relationship defining information of 2)
301: Inner peripheral edge A1: Rotation axis W: Substrate W1: Liquid landing position liquid width

Claims (14)

A substrate holding unit for holding a substrate in which at least a part of the peripheral edge forms an arc shape;
A substrate rotation unit that rotates the substrate held by the substrate holding unit around a rotation axis passing through a central portion of the substrate;
A processing liquid nozzle for discharging a processing liquid toward the outer periphery of the substrate held by the substrate holding unit;
A gas nozzle that blows gas from the inside in the rotational radius direction of the substrate toward the treatment liquid that has been deposited at the treatment liquid landing position on the substrate,
In parallel with the substrate rotation step for controlling the substrate rotation unit to rotate the substrate at a predetermined processing rotation speed, and for supplying the processing liquid from the processing liquid nozzle toward the outer peripheral portion of the substrate. In parallel with the process liquid discharge process to be discharged, the substrate rotation process and the process liquid discharge process, from the inside in the rotational radius direction of the substrate toward the process liquid that has reached the process liquid landing position on the substrate In parallel with the gas spraying step of blowing gas and the gas spraying step, the gas spraying position on the substrate and / or the gas flow rate of the gas sprayed from the gas nozzle to the substrate are controlled to the liquid landing position. A substrate processing device including a control device for executing an inner peripheral end position adjusting step of adjusting the position of the inner peripheral end of the processing liquid that has landed to a position corresponding to the processing rotational speed. Location. A gas nozzle driving unit for driving the gas nozzle;
The substrate processing apparatus according to claim 1, wherein the control device executes a step of adjusting the position of the gas blowing region by controlling the gas nozzle driving unit as the inner peripheral end position adjusting step. A first information storage unit that stores first correspondence defining information that defines the correspondence between the processing rotation speed and the position of the gas blowing region;
The substrate processing apparatus according to claim 2, wherein the control device executes the inner peripheral end position adjusting step based on the first correspondence relationship defining information. A spray flow rate adjusting unit for adjusting the gas spray flow rate;
The said control apparatus performs the gas flow rate adjustment process which controls the said spraying flow rate adjustment unit and adjusts the spraying flow rate of the said gas as said inner peripheral edge position adjustment process. The substrate processing apparatus as described. A second information storage unit that stores second correspondence definition information that defines a correspondence relationship between the processing rotation speed and the gas blowing flow rate;
The substrate processing apparatus according to claim 4, wherein the control device executes the inner peripheral end position adjusting step based on the second correspondence relationship defining information.   The control device does not execute the inner peripheral end position adjusting step when the processing rotational speed is equal to or higher than a predetermined speed, and the inner peripheral end position adjusting step when the processing rotational speed is less than a predetermined speed. The substrate processing apparatus as described in any one of Claims 1-5 which performs. The substrate holding unit includes a unit that supports the central portion of the substrate without supporting the outer peripheral portion of the substrate and holds the substrate.
The substrate processing apparatus further includes each peripheral end position measurement unit for measuring each peripheral end position in the circumferential direction of the substrate held by the substrate holding unit,
The control device performs each peripheral edge position measurement step of measuring each peripheral edge position of the substrate held by the substrate holding unit in the circumferential direction by each peripheral edge position measuring unit, and further, As a peripheral edge position adjusting step, the inner peripheral edge of the processing liquid that has landed at the liquid landing position is a position change of the arrangement position peripheral edge that is the peripheral edge of the circumferential position where the processing liquid nozzle is disposed. The substrate processing according to any one of claims 1 to 6, wherein a step of adjusting a position of an inner peripheral end of the processing liquid that has landed on the liquid deposition position so as to follow and reciprocate is performed. apparatus.   The said gas nozzle is a substrate processing apparatus as described in any one of Claims 1-7 which has a gas discharge port which makes the belt | band | zone shape in which the blowing area | region of the said gas follows the outer peripheral part of the said board | substrate.   The said gas nozzle is a substrate processing apparatus as described in any one of Claims 1-8 which discharges gas to the outer side of a board | substrate, and diagonally downward. A substrate rotation step of rotating a substrate having at least a part of a peripheral edge in an arc shape around a rotation axis passing through a central portion of the substrate at a predetermined processing rotation speed;
In parallel with the substrate rotation step, a processing liquid discharge step for discharging the processing liquid from the processing liquid nozzle toward the outer peripheral portion of the substrate,
In parallel with the substrate rotation step and the treatment liquid discharge step, a gas blowing step of blowing a gas from the inside in the rotation radius direction of the substrate toward the treatment liquid deposited on the treatment liquid landing position on the substrate,
In parallel with the gas spraying step, by controlling the gas spray position on the substrate and / or the gas flow rate of the gas sprayed from the gas nozzle to the substrate, the treatment liquid that has landed at the liquid deposition position An inner peripheral end position adjusting step of adjusting an inner peripheral end position to a position corresponding to the processing rotation speed.   The substrate processing method according to claim 10, wherein the inner peripheral end position adjusting step includes a step of adjusting a position of the gas blowing region.   The substrate processing method according to claim 10, wherein the inner peripheral end position adjusting step includes a gas flow rate adjusting step of adjusting the blowing flow rate of the gas.   The inner peripheral end position adjusting step is not executed when the processing rotational speed is equal to or higher than a predetermined speed, and is executed when the processing rotational speed is lower than a predetermined speed. The substrate processing method as described in any one of Claims. The substrate processing method is a method executed in a substrate processing apparatus including the substrate holding unit that holds the substrate while supporting the central portion of the substrate without supporting the outer peripheral portion of the substrate,
The substrate processing method further includes each peripheral end position measuring step of measuring each peripheral end position in the circumferential direction of the substrate held by the substrate holding unit,
In the inner peripheral end position adjusting step, the inner peripheral end of the liquid landing position liquid width reciprocates following the position change of the arrangement position peripheral end, which is the peripheral end of the circumferential position where the treatment liquid nozzle is arranged. The substrate processing method according to any one of claims 10 to 13, further comprising a step of adjusting a position of an inner peripheral end of the processing liquid that has landed at the liquid landing position so as to move.

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