JP2018034305A - Manufacturing method for liquid injection head - Google Patents

Abstract

An object of the present invention is to provide a method of manufacturing a body ejection head that suppresses sagging of an opening of an individual communication path. A through hole forming step of forming a through hole (72) in a substrate (24), a first mask layer (63) is formed on a first surface (51) of the substrate (24), and the substrate ( The substrate (24) is exposed to an etching solution in a state where the second mask layer (68) is formed on the second surface (52) of 24), and the plate thickness is measured from the first surface (51) of the substrate (24). A channel space forming step of forming a channel space (39) by being depressed halfway in the direction. In the channel space forming step, the second mask layer (68) has a second through hole (72). The substrate (24) is exposed to an etching solution in a state in which the mask opening (69 ') including the opening of the through hole (72) is formed, and the through hole is larger than the opening area on the surface (52) side of the substrate. (72) The flow path cross-sectional area is expanded to form the individual communication path (26), and the liquid jet head is manufactured. Law. [Selection] Figure 10

Description

  The present invention relates to a method of manufacturing a liquid ejecting head that ejects liquid in a pressure chamber from a nozzle.

  As a liquid ejecting apparatus on which the liquid ejecting head is mounted, for example, there is an image recording apparatus such as an ink jet printer or an ink jet plotter, but recently, a very small amount of liquid can be accurately landed on a predetermined position. The liquid ejecting head is also applied to various manufacturing apparatuses utilizing the above. For example, a display manufacturing apparatus for manufacturing a color filter such as a liquid crystal display, an electrode forming apparatus for forming an electrode such as an organic EL (Electro Luminescence) display or FED (surface emitting display), and a chip for manufacturing a biochip (biochemical element) Applied to manufacturing equipment. The recording head for the image recording apparatus ejects liquid ink, and the color material ejecting head for the display manufacturing apparatus ejects solutions of R (Red), G (Green), and B (Blue) color materials. The electrode material ejecting head for the electrode forming apparatus ejects a liquid electrode material, and the bioorganic matter ejecting head for the chip manufacturing apparatus ejects a bioorganic solution.

  The above-described liquid ejecting head includes, for example, a nozzle plate having a plurality of nozzles, a pressure chamber forming substrate in which a plurality of spaces serving as pressure chambers communicating with each nozzle are formed, and a common liquid that is stored in each pressure chamber. A communication substrate in which a space serving as a liquid chamber (also referred to as a reservoir or a manifold) is formed, and a plurality of piezoelectric elements (a type of actuator) provided corresponding to each pressure chamber are provided. In addition, as the above-described communication substrate, there is one in which a part of the communication substrate is recessed halfway in the thickness direction of the substrate to form a space serving as a common liquid chamber (for example, Patent Document 1). An individual communication path that connects the common liquid chamber and the pressure chamber is formed in the recessed portion (thin portion).

JP2015-42482A

  The communication substrate as described above is formed by first forming an individual communication passage penetrating in the thickness direction of the substrate, and then removing the substrate halfway in the thickness direction from one surface side by anisotropic etching (wet etching). Formed with. However, in such a manufacturing method, since the edge of the opening on the space (common liquid chamber) side of the individual communication path is exposed to the etching solution, sagging occurs at the edge of the opening. Specifically, for example, as shown in FIG. 39, in the thin portion 91 of the communication substrate 90, the opening is formed at the edge of the opening on the common liquid chamber 93 side (the opposite side to the pressure chamber 94) of the individual communication path 92. Is formed so as to be inclined toward the outside (that is, toward the common liquid chamber 93 side). In other words, the opening on the common liquid chamber 93 side of the individual communication path 92 has a shape that expands to the same side. As a result, a sufficient flow rate of liquid from the common liquid chamber 93 to the pressure chamber 94 through the individual communication path 92 cannot be obtained, and bubbles may stay in the opening of the individual communication path 92 on the common liquid chamber 93 side. Further, the flow resistance and inertance in the individual communication path 92 are reduced, and there is a possibility that the liquid ejection characteristics are deteriorated.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a method of manufacturing a body ejection head that suppresses sagging of the opening of the individual communication path.

The method of manufacturing a liquid jet head according to the present invention has been proposed to achieve the above-described object, and is depressed halfway in the plate thickness direction from the first surface of the substrate toward the second surface on the opposite side. Channel space,
A liquid jet head manufacturing method comprising: an individual communication path that penetrates the substrate from the flow path space to the second surface side,
A through hole forming step of forming a through hole in the substrate;
A first mask layer is formed on the first surface of the substrate, a second mask layer is formed on the second surface of the substrate, the substrate is exposed to an etching solution, and the substrate Including a channel space forming step of forming a channel space by indenting from the first surface to the middle of the plate thickness direction,
In the flow path space forming step, in a state where a mask opening that is larger than an opening area of the through hole on the second surface side and includes the opening of the through hole is formed in the second mask layer. By exposing the substrate to an etching solution, the cross-sectional area of the through hole is expanded to form the individual communication path.

  According to this manufacturing method, sagging of the opening of the individual communication path can be suppressed. As a result, the flow rate of the liquid from the reservoir toward the pressure chamber through the individual communication path can be increased, and bubbles can be prevented from staying in the reservoir-side opening of the individual communication path. Further, the flow resistance and inertance in the individual communication path can be increased, and the liquid ejection characteristics can be improved.

Further, in the above manufacturing method, the flow path space forming step includes a first flow path space forming step and a first flow path space forming step of denting a region off the through hole in the first surface. And a second flow path space forming step of recessing a region corresponding to the flow path space,
In the second flow path space forming step, it is preferable that the flow passage cross-sectional area of the through hole is widened to form the individual communication path.

  According to this manufacturing method, the length of the individual communication path can be increased. Thereby, the flow resistance and inertance in the individual communication path can be further increased, and the liquid ejection characteristics can be further improved.

FIG. 3 is a perspective view illustrating a configuration of a printer. FIG. 3 is a cross-sectional view illustrating a configuration of a recording head. It is an enlarged view of the area | region A in FIG. 2 which made the downward direction the pressure chamber. It is a top view of a communication board. It is a state transition diagram in a cross section of a communication substrate for explaining a method for manufacturing a recording head. It is a plan view of a communication substrate for explaining a method for manufacturing a recording head. It is a state transition diagram in a cross section of a communication substrate for explaining a method for manufacturing a recording head. It is a state transition diagram in a cross section of a communication substrate for explaining a method for manufacturing a recording head. It is a state transition diagram in a cross section of a communication substrate for explaining a method for manufacturing a recording head. It is a state transition diagram in a cross section of a communication substrate for explaining a method for manufacturing a recording head. It is a state transition diagram in a cross section of a communication substrate for explaining a method for manufacturing a recording head. It is a state transition diagram in a cross section of a communication substrate for explaining a method for manufacturing a recording head. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a method of manufacturing a recording head in a second embodiment. FIG. 10 is a plan view of a communication substrate for explaining a method for manufacturing a recording head in a second embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a method of manufacturing a recording head in a second embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a method of manufacturing a recording head in a second embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a method of manufacturing a recording head in a second embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a method of manufacturing a recording head in a second embodiment. FIG. 10 is a cross-sectional view of a communication substrate for explaining a recording head manufacturing method according to a third embodiment. FIG. 10 is a plan view of a communication substrate for explaining a method for manufacturing a recording head according to a third embodiment. FIG. 10 is a cross-sectional view of a main part for explaining the configuration of a recording head in a fourth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fourth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fourth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fourth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fourth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fourth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fourth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fourth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fourth embodiment. FIG. 10 is a cross-sectional view of a main part for explaining the configuration of a recording head in a fifth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fifth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fifth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fifth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fifth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fifth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fifth embodiment. FIG. 10 is a state transition diagram in a cross section of a communication substrate for explaining a recording head manufacturing method according to a fifth embodiment. FIG. 10 is a cross-sectional view of a main part for explaining the configuration of a recording head in a sixth embodiment. FIG. 6 is a cross-sectional view of a main part for explaining the configuration of a conventional recording head.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments for carrying out the present invention will be described with reference to the accompanying drawings. In the embodiments described below, various limitations are made as preferred specific examples of the present invention. However, the scope of the present invention is not limited to the following description unless otherwise specified. However, the present invention is not limited to these embodiments. In the following, an ink jet recording head (hereinafter referred to as a recording head) 3 which is a kind of liquid ejecting head will be described as an example. FIG. 1 is a perspective view of an ink jet printer (hereinafter referred to as a printer) 1 which is a kind of liquid ejecting apparatus equipped with a recording head 3.

  The printer 1 is an apparatus that records an image or the like by ejecting ink (a type of liquid) onto the surface of a recording medium 2 (a type of landing target) such as a recording paper. The printer 1 includes a recording head 3, a carriage 4 to which the recording head 3 is attached, a carriage moving mechanism 5 that moves the carriage 4 in the main scanning direction, a conveyance mechanism 6 that transfers the recording medium 2 in the sub scanning direction, and the like. Yes. Here, the ink is stored in an ink cartridge 7 as a liquid supply source. The ink cartridge 7 is detachably attached to the recording head 3. It is also possible to employ a configuration in which the ink cartridge is disposed on the main body side of the printer and supplied from the ink cartridge to the recording head through the ink supply tube.

  The carriage moving mechanism 5 includes a timing belt 8. The timing belt 8 is driven by a pulse motor 9 such as a DC motor. Therefore, when the pulse motor 9 operates, the carriage 4 is guided by the guide rod 10 installed on the printer 1 and reciprocates in the main scanning direction (width direction of the recording medium 2). The position of the carriage 4 in the main scanning direction is detected by a linear encoder (not shown) which is a kind of position information detecting means. The linear encoder transmits the detection signal, that is, the encoder pulse (a kind of position information) to the control unit of the printer 1.

  Next, the recording head 3 will be described. FIG. 2 is a cross-sectional view illustrating the configuration of the recording head 3. FIG. 3 is an enlarged view of the area A in FIG. 2, that is, an enlarged cross-sectional view of the individual communication path 26. FIG. 4 is a plan view of the communication substrate 24 as viewed from the first surface 51 side. In the following description, the stacking direction of each member will be described as the vertical direction (y direction in FIGS. 2 and 3) as appropriate. Also, in FIG. 3, for the convenience of explanation, the top and bottom of FIG. 2 are inverted. That is, in FIG. 3, the pressure chamber 30 side is the lower side, and the common liquid chamber 25 side is the upper side. As shown in FIG. 2, the recording head 3 in the present embodiment is attached to the head case 16 in a state where the actuator unit 14 and the flow path unit 15 are stacked.

  The head case 16 is a box-shaped member made of synthetic resin, and a liquid introduction path 18 for supplying ink to each pressure chamber 30 is formed therein. The liquid introduction path 18 is a space for storing ink common to a plurality of formed pressure chambers 30 together with a common liquid chamber 25 described later. In the present embodiment, two liquid introduction paths 18 are formed corresponding to the rows of pressure chambers 30 arranged in two rows. Further, in the lower portion (nozzle plate 21 side) of the head case 16, the housing is recessed in a rectangular parallelepiped shape from the lower surface of the head case 16 (surface on the nozzle plate 21 side) to the middle of the head case 16 in the height direction. A space 17 is formed. When a flow path unit 15 to be described later is joined in a state of being positioned on the lower surface of the head case 16, the actuator unit 14 (the pressure chamber forming substrate 29, the sealing plate 33, the drive IC 34, etc.) stacked on the communication substrate 24 is obtained. It is configured to be accommodated in the accommodating space 17.

  As shown in FIG. 2, the actuator unit 14 in this embodiment is formed by stacking a pressure chamber forming substrate 29, a vibration plate 31, a piezoelectric element 32 that is a kind of actuator, a sealing plate 33, and a driving IC 34. Yes. The actuator unit 14 is formed smaller than the accommodation space 17 so that it can be accommodated in the accommodation space 17.

  The pressure chamber forming substrate 29 is a silicon substrate (for example, a silicon single crystal substrate having a surface crystal plane orientation of (110) plane) that constitutes a lower portion (portion unit 15 side portion) of the actuator unit 14. A part of the pressure chamber forming substrate 29 is completely removed in the plate thickness direction by anisotropic etching, and a plurality of spaces to be the pressure chambers 30 are arranged in parallel along the nozzle row direction. The space is partitioned by the communication substrate 24 at the lower side and partitioned by the diaphragm 31 to form the pressure chamber 30. In addition, this space, that is, the pressure chamber 30 is formed in two rows corresponding to the nozzle rows formed in two rows. Each pressure chamber 30 is a hollow portion elongated in the direction orthogonal to the nozzle row direction (the x direction in FIG. 2), and an individual communication passage 26 described later communicates with an end portion on one side in the longitudinal direction. A nozzle communication passage 27 described later communicates with the end portion on the side.

  The vibration plate 31 is a thin film member having elasticity, and is laminated on the upper surface of the pressure chamber forming substrate 29 (the surface opposite to the flow path unit 15 side). The diaphragm 31 seals the upper opening of the space to be the pressure chamber 30. In other words, the pressure chamber 30 is partitioned by the diaphragm 31. A portion of the diaphragm 31 corresponding to the pressure chamber 30 (specifically, an upper opening of the pressure chamber 30) functions as a displacement portion that displaces in a direction away from or close to the nozzle 22 as the piezoelectric element 32 is bent and deformed. To do. That is, a region corresponding to the upper opening of the pressure chamber 30 in the diaphragm 31 is a drive region 35 in which bending deformation is allowed. On the other hand, a region outside the upper opening of the pressure chamber 30 in the diaphragm 31 is a non-driving region 36 in which bending deformation is inhibited.

The diaphragm 31 is, for example, an elastic film made of silicon dioxide (SiO ₂ ) formed on the upper surface of the pressure chamber forming substrate 29 and an insulator made of zirconium oxide (ZrO ₂ ) formed on the elastic film. And a membrane. Then, the piezoelectric elements 32 are stacked in regions corresponding to the pressure chambers 30 on the insulating film (the surface opposite to the pressure chamber forming substrate 29 side of the vibration plate 31), that is, in the driving region 35. The piezoelectric element 32 in the present embodiment is a so-called flexural mode piezoelectric element. The piezoelectric element 32 is formed by, for example, sequentially laminating a lower electrode layer, a piezoelectric layer, and an upper electrode layer on the vibration plate 31. Either the upper electrode film or the lower electrode film is a common electrode formed in common for each piezoelectric element 32, and the other is an individual electrode formed individually for each piezoelectric element 32. When an electric field corresponding to the potential difference between the two electrodes is applied between the lower electrode layer and the upper electrode layer, the piezoelectric element 32 bends and deforms in a direction away from or near to the nozzle 22. Note that the piezoelectric elements 32 in the present embodiment are formed in two rows along the nozzle row direction corresponding to the pressure chambers 30 arranged in two rows along the nozzle row direction.

  Further, the individual terminals 41 and the common terminals 42 are stacked in the non-driving region 36 of the diaphragm 31 in the present embodiment. Specifically, in a direction orthogonal to the nozzle row direction (x direction in FIG. 2), individual terminals 41 are formed outside the row of one piezoelectric element 32 and outside the row of the other piezoelectric element 32. A common terminal 42 is formed between the columns of the elements 32. The individual terminal 41 is a terminal connected to the individual electrode of the piezoelectric element 32 via a lead wiring or the like (not shown), and is formed for each piezoelectric element 32. On the other hand, the common terminal 42 is a terminal connected to the common electrode of each piezoelectric element 32 via a lead wiring or the like (not shown), and is formed at least one or more.

  As shown in FIG. 2, the sealing plate 33 is a silicon disposed with a gap with respect to the piezoelectric element 32 with a photosensitive adhesive 43 having an insulating property interposed between the sealing plate 33 and the vibration plate 31. It is a manufactured substrate (for example, a silicon single crystal substrate whose surface crystal plane orientation is (110) plane). A plurality of bump electrodes 40 that output a drive signal from the drive IC 34 to the piezoelectric element 32 side are formed on the lower surface (the surface on the pressure chamber forming substrate 29 side) of the sealing plate 33 in the present embodiment. As shown in FIG. 2, the bump electrode 40 has a position corresponding to one individual terminal 41 formed outside the one piezoelectric element 32, and the other individual terminal 41 formed outside the other piezoelectric element 32. And a position corresponding to a common terminal 42 formed between the rows of both piezoelectric elements 32. Each bump electrode 40 is connected to a corresponding individual terminal 41 or common terminal 42. Note that the photosensitive adhesive 43 formed on the outer side of the pressure chamber forming substrate 29 in the photosensitive adhesive 43 is formed so as to surround the row of the two piezoelectric elements 32. That is, each piezoelectric element 32 is sealed in a space surrounded by the pressure chamber forming substrate 29, the sealing plate 33, and the photosensitive adhesive 43.

  In addition, the bump electrode 40 in the present embodiment has elasticity, and protrudes from the lower surface of the sealing plate 33 toward the diaphragm 31 side. Specifically, the bump electrode 40 includes a resin having elasticity and a conductive film that covers at least a part of the surface of the resin (both not shown). This resin is formed into a protrusion along the nozzle row direction on the surface of the sealing plate 33. In addition, a plurality of conductive films connected to the individual terminals 41 are formed along the nozzle row direction corresponding to the piezoelectric elements 32 arranged side by side along the nozzle row direction. Further, at least one conductive film that is conductive to the common terminal 42 is formed corresponding to the common terminal 42. The bump electrodes are not limited to those having a resin. A bump electrode made of only a metal having no resin inside or a bump electrode made of solder may be employed. Further, the conductive film of the bump electrode 40 extends to a position away from the resin, and the upper surface (pressure chamber forming substrate 29) of the sealing plate 33 through the through wiring 45 penetrating the sealing plate 33 in the thickness direction. Is connected to the upper surface side wiring 46 laminated on the opposite surface.

  The drive IC 34 is an IC chip for driving the piezoelectric element 32 and is laminated on the upper surface of the sealing plate 33 via an adhesive 48 such as an anisotropic conductive film (ACF). As shown in FIG. 2, a plurality of IC terminals 47 connected to the terminal portions of the upper surface side wiring 46 are formed on the lower surface (surface on the sealing plate 33 side) of the drive IC 34. Among the IC terminals 47, a plurality of IC terminals 47 corresponding to the individual terminals 41 are arranged in parallel along the nozzle row direction. In this embodiment, two rows of IC terminals 47 are formed corresponding to the rows of piezoelectric elements 32 arranged in two rows.

  The flow path unit 15 in the present embodiment includes a communication substrate 24 (a kind of substrate in the present invention) and a nozzle plate 21. The nozzle plate 21 is a silicon substrate bonded to the lower surface of the communication substrate 24 (the surface opposite to the pressure chamber forming substrate 29). In the present embodiment, the nozzle plate 21 seals the opening on the lower surface side of a space that becomes a common liquid chamber 25 described later. The nozzle plate 21 has a plurality of nozzles 22 arranged in a straight line (row shape). Two rows of nozzles 22 (that is, nozzle rows) including the plurality of nozzles 22 are formed on the nozzle plate 21. The nozzles 22 constituting each nozzle row are provided at regular intervals along the sub-scanning direction, for example, at a pitch corresponding to the dot formation density from the nozzle 22 on one end side to the nozzle 22 on the other end side. In addition, the nozzle plate is bonded to a region of the communication substrate that is inward from the common liquid chamber, and the opening on the lower surface side of the space serving as the common liquid chamber is sealed with a member such as a flexible compliance sheet. You can also. In this way, the nozzle plate can be made as small as possible.

  The communication substrate 24 is a silicon substrate (for example, a silicon single crystal substrate having a surface crystal plane orientation of (110) plane) that constitutes the upper portion (portion on the head case 16 side) of the flow path unit 15. As shown in FIG. 2, the communication substrate 24 communicates with the liquid introduction path 18, and a common liquid chamber 25 in which ink common to each pressure chamber 30 is stored, and the liquid is introduced through the common liquid chamber 25. An individual communication path 26 that individually supplies ink from the path 18 to each pressure chamber 30 and a nozzle communication path 27 that connects the pressure chamber 30 and the nozzle 22 are formed by anisotropic etching or the like. As shown in FIG. 4, a plurality of individual communication paths 26 and nozzle communication paths 27 are formed along the nozzle row direction (z direction in FIG. 4). The common liquid chambers 25 are long empty portions along the nozzle row direction (z direction). As shown in FIG. 2, the common liquid chambers 25 are arranged in two rows corresponding to the rows of the pressure chambers 30 arranged in two rows. Is formed.

  As shown in FIG. 2, the common liquid chamber 25 is pressurized from the first liquid chamber 38 that penetrates the thickness direction of the communication substrate 24 and the surface on the nozzle plate 21 side (hereinafter referred to as the first surface 51). A second liquid chamber 39 (in the present invention) formed in a state in which it is depressed halfway in the thickness direction toward the chamber forming substrate 29 side surface (hereinafter referred to as the second surface 52), leaving the thin portion 37. A kind of flow path space). The opening on the second surface 52 side of the first liquid chamber 38 communicates with the liquid introduction path 18 formed in the head case 16. One end of the second liquid chamber 39 in the direction (x direction) orthogonal to the nozzle row direction (the end on the side far from the nozzle 22) communicates with the first liquid chamber 38, while the other end in the same direction. The end is formed at a position overlapping a part of the pressure chamber 30. The individual communication passage 26 is formed at the other end portion of the second liquid chamber 39 and communicates the second liquid chamber 39 and the pressure chamber 30. That is, the individual communication passage 26 penetrates the communication substrate 24 (specifically, the thin portion 37) from the second liquid chamber 39 to the second surface 52 side at the other end of the second liquid chamber 39.

  As shown in FIGS. 3 and 4, the end on the other side in the direction (x direction) orthogonal to the nozzle row direction among the surfaces on the second liquid chamber 39 side of the thin wall portion 37 that partitions the second liquid chamber 39. An inclined surface 53 that is inclined so that the thickness of the thin portion 37 increases from the first liquid chamber 38 side toward the individual communication passage 26 side is formed. In other words, the inclined surface 53 is inclined downward in FIG. 3 from the edge of the opening of the individual communication path 26 toward the first liquid chamber 38 side. Thereby, since the thickness of the thin part 37 of the part where the individual communication path 26 is opened can be increased, the length of the individual communication path 26 can be increased while ensuring the volume of the second liquid chamber 39. . As a result, compared with the case where the thin portion 37 is not provided with an inclined surface, the flow resistance and inertance in the individual communication path 26 can be increased, and the ink ejection characteristics can be improved.

  Next, the shape of the individual communication path 26 will be described in detail with reference to FIG. As shown in FIG. 3, since the second liquid chamber 39 and the individual communication path 26 are formed by using anisotropic etching (wet etching), sagging occurs in the opening of the individual communication path 26. Specifically, among the wall surfaces that define the individual communication passages 26, the second liquid chamber 39 side portion of the one side wall surface in the direction orthogonal to the nozzle row direction (x direction) with respect to the second surface 52 An inclined sagging surface 59 is formed. In addition, a sag portion 60 (in the present embodiment, a sag portion 60 having a V-shaped cross section) is formed at the end on the second liquid chamber 39 side of the isolation wall 55 that separates the adjacent individual communication paths 26. For this reason, the individual communication path 26 has a shape in which the flow path cross-sectional area is widened from the middle of the plate thickness direction (y direction) toward the second liquid chamber 39 side. That is, the individual communication passage 26 extends substantially perpendicularly to the second surface 52 (or the first surface 51) from the opening on the second surface 52 side to the middle on the first surface 51 side. 1 flow path portion 56 and a second flow path portion 57 having a diameter expanded from the first flow path portion 56 toward the second liquid chamber 39 side. In addition, as shown in FIG. 3, the individual communication path 26 according to the present invention has a suppressed opening edge and a longer first flow path portion 56 than the conventional individual communication path as shown in FIG. 39. It has become a shape. A method for forming such individual communication paths 26 will be described in detail later.

  The recording head 3 configured as described above introduces ink from the ink cartridge 7 into the pressure chamber 30 via the liquid introduction path 18, the common liquid chamber 25, the individual communication path 26, and the like. In this state, if a drive signal from the drive IC 34 is supplied to the piezoelectric element 32 via the bump electrode 40 or the like, the piezoelectric element 32 is driven and pressure fluctuation occurs in the ink in the pressure chamber 30. By using this pressure fluctuation, the recording head 3 ejects ink droplets from the nozzles 22.

  Next, a manufacturing method of the recording head 3, particularly a forming process for forming the individual communication path 26 in the communication substrate 24 will be described in detail. 5 and 7 to 12 are state transition diagrams in a cross section of a silicon single crystal substrate (hereinafter, simply referred to as a communication substrate 24) whose crystal plane orientation of the surface to be the communication substrate 24 is a (110) plane. 6 is a plan view seen from the first surface side of the communication board 24 in FIG. 5 and 7 to 12, the upper surface is represented as the first surface 51 and the lower surface is represented as the second surface 52. In addition, the formation of the nozzle communication path 27 and the first liquid chamber 38 can be performed by various known methods, and thus description thereof is omitted. Further, the following description will be made with attention paid to the communication substrate 24 around the area where the individual communication passages 26 are formed.

  First, as shown in FIG. 5, a layer serving as a mask with respect to an etching solution such as a silicon oxide film or a nitride film is formed on the first surface 51 and the second surface 52 of the communication substrate 24. Specifically, the first mask layer 63 is formed on the first surface 51 of the communication substrate 24, and the second mask layer 68 is formed on the second surface 52 of the communication substrate 24. As shown in FIG. 5, the first mask layer 63 in the region of the first mask layer 63 that becomes the second liquid chamber 39 (thin portion 37) is thinned by half-etching. In other words, a first mask recess 64 in which the first mask layer 63 is recessed is formed in a region corresponding to the thin portion 37. The thick portion of the first mask layer 63 (hereinafter referred to as the first mask thick portion 65) that is out of the first mask recess 64 is combed in the region that becomes the inclined surface 53 as shown in FIG. It is formed in a tooth shape. That is, the region that becomes the inclined surface 53 is a comb-tooth region 66 in which the first mask thick portion 65 is formed in a comb-tooth shape. The first mask thick portion 65 in the comb-tooth region 66 is formed to be long along the direction orthogonal to the nozzle row direction in the region between the regions where the individual communication paths 26 are formed. Specifically, the first mask thick portion 65 in the comb tooth region 66 is the other side in the direction orthogonal to the nozzle row direction of the region that becomes the second liquid chamber 39 (the region that becomes the first liquid chamber 38 is It extends along the same direction from the end on the opposite side over the region that becomes the inclined surface 53.

  Further, as shown in FIG. 5, the second mask layer 68 includes a second mask opening 69 in which the second mask layer 68 is completely removed in the thickness direction by etching, and the second mask layer 68. A plurality of second mask recesses 70 from which the layer 68 has been removed halfway through the thickness direction are formed corresponding to the regions where the individual communication paths 26 are formed. The second mask opening 69 is an opening formed on the other side of the region where the individual communication path 26 is formed (the side closer to the position corresponding to the nozzle 22). The second mask recess 70 is a recess formed on one side of the region where the individual communication path 26 is formed (the side far from the position corresponding to the nozzle 22). As shown in FIG. 6, one end of the second mask opening 69 is connected to the other end of the second mask recess 70. In the present embodiment, the dimension of the second mask opening 69 in the nozzle row direction is larger than the dimension of the second mask recess 70 in the same direction.

  If the mask layer as described above is formed on the communication substrate 24, the through hole 72 is formed in the communication substrate 24 in the through hole forming step. Specifically, as shown in FIG. 7, first, a small-diameter basic hole 71 is formed in the communication substrate 24 from the first surface 51 side by a laser in a portion corresponding to the second mask opening 69. The base hole 71 may or may not penetrate the communication substrate 24. Further, the basic hole 71 can also be formed by dry etching, Bosch method or the like. Next, as shown in FIG. 8, for example, the communication substrate 24 is exposed to an etching solution made of an aqueous solution of potassium hydroxide (KOH) to widen the diameter (channel cross-sectional area) of the basic hole 71. As a result, a through hole 72 is formed in which the shape of the cross section of the flow path is aligned with the shape of the second mask opening 69.

  If the through hole 72 is formed in the communication substrate 24, the first mask layer 63 and the second mask layer 68 are thinned by etching with, for example, hydrofluoric acid (HF). As a result, as shown in FIG. 9, the portion of the first mask layer 63 corresponding to the first mask recess 64 on the first surface 51 is completely removed, and the first mask opening 64 is formed in the portion. 'Is formed. Similarly, on the second surface 52, the second mask layer 68 corresponding to the second mask recess 70 is completely removed, and the second mask recess 70 and the second mask opening 69 are formed in the corresponding portion. Is formed as a second mask opening 69 '. The second mask opening 69 ′ is larger than the opening area of the through hole 72 on the second surface 52 side and includes the opening of the through hole 72. Note that the first mask opening 64 ′ and the second mask opening 69 ′ are slightly widened when the first mask layer 63 and the second mask layer 68 are thinned. As a result, as shown in FIG. 9, the first surface 51 of the communication substrate 24 is exposed from the first mask opening 64 ', and the second surface 52 of the communication substrate 24 is exposed from the second mask opening 69'. To do.

  In this way, with the first mask opening 64 ′ formed in the first mask layer 63 and the second mask opening 69 ′ formed in the second mask layer 68, the communication substrate 24 is exposed to the etching solution. The process proceeds to the flow path space forming step. When the communication substrate 24 is exposed to the etching solution, as shown in FIG. 10, the region corresponding to the first mask opening 64 ′ of the communication substrate 24 is etched, and the communication substrate 24 in the region is shaved in the thickness direction. . That is, the communication substrate 24 in the first mask opening 64 ′ is recessed from the first surface 51 in the plate thickness direction. At this time, in the comb-tooth region 66, the portion covered with the first mask layer 63 undergoes side etching from the end on one side (right side in FIG. 10) toward the other side (see the broken line arrow in FIG. 10). ). A first sag surface 75 due to the crystal plane appears at the edge of the opening of the through hole 72 on the first surface 51 side. On the other hand, the region corresponding to the second mask opening 69 ′ of the communication substrate 24 is also etched, and the second sag surface 76 caused by the crystal plane appears at the edge of the opening of the through hole 72 on the second surface 52 side. .

  When etching proceeds from this state, as shown in FIG. 11, the communication substrate 24 in the region corresponding to the first mask opening 64 'is further shaved in the thickness direction. Further, the side etching of the portion covered with the first mask layer 63 in the comb tooth region 66 proceeds. Further, the first sag surface 75 at the edge of the opening on the first surface 51 side of the through hole 72 grows, that is, the amount of sag at the edge of the opening on the first surface 51 side of the through hole 72 increases. The opening area of the hole 72 on the first surface 51 side increases. Here, when the side etching of the portion covered with the first mask layer 63 in the comb-tooth region 66 reaches the first sag surface 75, the etching proceeds downward from the portion. That is, the isolation wall 55 ′ that separates the through holes 72 starts to sag downward from the end on the first surface 51 side. Further, etching proceeds from the opening on the second surface 52 side of the through hole 72 of the communication substrate 24 toward the first surface 51 side, and from the opening on the second surface 52 side to the middle on the first surface 51 side. An intermediate flow path 77 having a diameter (flow path cross-sectional area) that is the same as the opening area of the second mask opening 69 'is formed. Along with this, the second sag surface 76 moves to the first surface 51 side. And between the 1st sag surface 75 and the 2nd sag surface 76, it will be in the state where a part of penetration hole 72 in which the channel cross-sectional area became narrow was left behind. In this state, the surface on the first surface 51 side of the communication substrate 24 in the comb tooth region 66 is slightly inclined downward from the opening edge on the first surface 51 side of the through hole 72 toward one side. It becomes.

  As the etching further proceeds, the communication substrate 24 in the region corresponding to the first mask opening 64 ′ is further scraped in the thickness direction, and a space that becomes the second liquid chamber 39 is formed. At this time, the inclined surface 53 is formed in the comb tooth region 66. Further, the sagging of the opening edge of the through hole 72 on the first surface 51 side further proceeds, and the opening area of the through hole 72 on the first surface 51 side is increased. Further, etching proceeds from the opening on the first surface 51 side and the opening on the second surface 52 side of the through hole 72 of the communication substrate 24, and a portion corresponding to the second sag surface 76 penetrates in the plate thickness direction. As a result, the second sag surface 76 disappears, and the other end portion of the first sag surface 75 disappears, and the individual communication path 26 is formed. That is, the flow path cross-sectional area is partitioned by the first flow path portion 56 having the same area as the opening area of the second mask opening 69 ′, and the one side surface is defined by the sag surface 59 (first sag surface 75). A second flow path portion 57 having a diameter expanded from the first flow path portion 56 toward the first mask layer 63 side is formed. Further, a sag portion 60 that is sagging in a V shape is formed on the isolation wall 55 that separates the individual communication paths 26 from each other.

  Finally, by removing the first mask layer 63 and the second mask layer 68, the communication substrate 24 as shown in FIG. 3 is created. When the communication substrate 24 is created in this way, the nozzle plate 21 is joined to the first surface 51 of the communication substrate 24 to produce the flow path unit 15. Further, the actuator unit 14 is joined to the second surface 52 of the communication substrate 24. Then, by joining the flow path unit 15 to which the actuator unit 14 is joined to the lower surface of the head case 16, the actuator unit 14 is accommodated in the accommodation space 17 and the recording head 3 is created.

  As described above, in the manufacturing method of the recording head 3 described above, in the flow path space forming step in which the second liquid chamber 39 is formed by being recessed from the first surface 51 of the communication substrate 24 in the middle of the plate thickness direction. By exposing the substrate 24 to the etching solution, the flow passage cross-sectional area of the through-hole 72 is widened to form the individual communication passage 26, so that the opening of the individual communication passage 26 can be suppressed. In short, when the individual communication passage 26 is formed, the etching solution is also introduced from the periphery of the through hole 72 on the second surface 52 side to widen the cross-sectional area of the through hole 72, so that the first sagging surface A part of the 75 through-hole 72 side can be removed, and the sag amount of the opening on the second liquid chamber 39 side (first surface 51 side) of the individual communication path 26 can be reduced. As a result, the opening area of the individual communication path 26 on the second liquid chamber 39 side can be reduced and the length of the first flow path portion 56 can be increased, so that the ink flowing from the reservoir to the pressure chamber 30 through the individual communication path 26 can be reduced. The flow rate can be increased. Thereby, it is possible to suppress air bubbles from staying in the opening on the reservoir side of the individual communication path 26. Further, the flow resistance and inertance in the individual communication path 26 can be increased, and ink ejection characteristics can be improved. Further, the position at which the opening edge of the through hole 72 on the first surface 51 side begins to sag (that is, the position at which the first sag surface 75 starts to be formed) is set to the other side (first liquid chamber 38). The separation start of the isolation wall 55 ′ that isolates the through holes 72 from each other can be delayed. Thereby, the sagging amount of the sagging part 60 formed in the isolation wall 55 which isolate | separates individual communication paths 26 can be suppressed.

  By the way, the shape of the mask layer formed on the communication substrate 24 is not limited to the first embodiment described above. For example, in the second embodiment shown in FIGS. 13 to 18, the shape of the second mask layer 68 is different from that of the first embodiment described above. 13 and 15 to 18 are state transition diagrams in the cross section of the communication substrate 24. FIG. FIG. 14 is a plan view of the communication board 24 in FIG.

  In the present embodiment, as shown in FIG. 13, the second mask layer is formed in a region where the individual communication passage 26 is formed in the second mask layer 68 formed on the second surface 52 of the communication substrate 24. Two second mask openings 69 from which 68 has been completely removed in the thickness direction by etching are formed apart in a direction perpendicular to the nozzle row direction. Specifically, the second mask first opening 69a is formed on the other side of the region where the individual communication path 26 is formed (the side closer to the position corresponding to the nozzle 22), and one side (the position corresponding to the nozzle 22). A second mask second opening 69b is formed on the side far from the second side. Further, a second mask recess in which the second mask layer 68 is removed halfway in the thickness direction by half etching between the second mask first opening 69a and the second mask second opening 69b. 70 is formed. That is, as shown in FIG. 14, the second mask first opening 69a is connected to the other end of the second mask recess 70, and the second mask first is connected to the one end of the second mask recess 70. Two openings 69b are connected. In the present embodiment, the second mask first opening 69a and the second mask second opening 69b are formed so that the dimension in the nozzle row direction is larger than the dimension of the second mask recess 70 in the same direction. Yes. Note that the shape of the first mask layer 63, that is, the shape of the first mask recess 64, and the like are the same as those in the first embodiment described above, and thus description thereof is omitted.

  If the mask layer as described above is formed on the communication substrate 24, the through-hole 72 is formed in the communication substrate 24 in the through-hole forming step as in the first embodiment. Specifically, as shown in FIG. 15, first, in a portion corresponding to the second mask first opening 69a, a small diameter basic hole 71 is formed in the communication substrate 24 from the first surface 51 side by a laser. Next, as shown in FIG. 16, the communication substrate 24 is exposed to the etching solution to widen the diameter (flow channel cross-sectional area) of the basic hole 71. Thereby, the through-hole 72 in which the shape of the flow path cross section is aligned with the shape of the second mask first opening 69a is formed. At this time, since the communicating substrate 24 exposed to the second mask second opening 69b is exposed to the etching solution, a dimple 78 slightly depressed from the second surface 52 is formed in this portion.

  Next, as in the first embodiment, the first mask layer 63 and the second mask layer 68 are thinned by etching. As a result, as shown in FIG. 17, the portion of the first mask layer 63 corresponding to the first mask recess 64 on the first surface 51 is completely removed, and the first mask opening 64 is formed in the portion. 'Is formed. Further, in the second surface 52, the second mask layer 68 corresponding to the second mask recess 70 is completely removed, and the second mask recess 70 and the second mask first opening are formed in the corresponding portion. A second mask opening 69 ′ in which 69 a and the second mask second opening 69 b are integrated is formed. Similarly to the first embodiment, the second mask opening 69 ′ in this embodiment is wider than the opening area on the second surface 52 side of the through hole 72 and includes the opening of the through hole 72. Become.

  Then, with the first mask opening 64 ′ formed in the first mask layer 63 and the second mask opening 69 ′ formed in the second mask layer 68, the flow proceeds to the flow path space forming step. That is, as in the first embodiment, the communication substrate 24 is exposed to an etching solution, and a region corresponding to the first mask opening 64 ′ and a region corresponding to the second mask opening 69 ′ of the communication substrate 24 are etched. . As a result, as shown in FIG. 18, the region corresponding to the second mask opening 69 ′ of the communication substrate 24 is etched, and the edge of the opening on the second surface 52 side of the through hole 72 is caused by the crystal plane. A second sag surface 76 appears. That is, the dimple 78 disappears by etching, and a second sag surface 76 is formed in this portion. The first surface 51 side is the same as that in the first embodiment described above, and a description thereof will be omitted. Further, the subsequent steps are also the same as those in the first embodiment described above, and thus the description thereof is omitted. Thereby, also in the present embodiment, the communication substrate 24 in the region corresponding to the first mask opening 64 ′ is further scraped in the plate thickness direction, and the inclined surface 53 is formed in the comb-tooth region 66. In addition, the flow path cross-sectional area is partitioned by the first flow path portion 56 having the same area as the opening area of the second mask opening 69 ′, and one side surface is partitioned by a sag surface 59 (first sag surface 75). A second flow path portion 57 having a diameter expanded from the first flow path portion 56 toward the first mask layer 63 side is formed. In this way, the communication substrate 24 as shown in FIG. 3 is produced.

  Thus, in the present embodiment, the opening pattern (opening shape) of the second mask opening 69 ′ is the same as the opening pattern of the second mask first opening 69a on the other side and the second mask second on the one side. Since it is defined by the opening pattern of the opening 69b, variation in the shape of the individual communication path 26 defined by the opening pattern of the second mask opening 69 ′ can be suppressed. That is, a resist is applied, exposed and developed to provide a resist pattern, and then etched to form the second mask first opening 69a on the other side and the second mask second opening 69b on one side. In addition, since the second mask first opening 69a on the other side and the second mask second opening 69b on the one side can be simultaneously formed by applying the same exposure mask, the relative positions of the two are shifted. Can be suppressed. As a result, it is possible to suppress variation in the opening pattern (opening shape) of the second mask opening 69 ′, and thus it is possible to suppress variation in the shape of the individual communication passage 26.

  Further, in the third embodiment shown in FIGS. 19 and 20, the opening pattern (opening shape) of the second mask opening 69 ′ is defined by the pattern (shape) of the second mask recess 70. The second mask layer 68 is patterned. FIG. 19 is a cross-sectional view of the communication substrate 24 in a state where the mask layer is formed. 20 is a plan view of the communication board 24 in FIG.

  In the present embodiment, as shown in FIG. 19, the second mask layer 68 is formed in the region where the individual communication path 26 is formed in the second mask layer 68 formed on the second surface 52 of the communication substrate 24. A second mask recess 70 is formed by removing halfway in the thickness direction by half etching. Further, as shown in FIGS. 19 and 20, the second mask layer 68 is formed at the end portion on the other side (the side closer to the position corresponding to the nozzle 22) in the region where the second mask recess 70 is formed. A second mask opening 69 that is completely removed in the thickness direction by etching is formed. As shown in FIG. 20, the opening area of the second mask opening 69 is smaller than the opening area of the opening of the second mask recess 70. Note that the shape of the first mask layer 63, that is, the shape of the first mask recess 64, and the like are the same as those in the first embodiment described above, and thus description thereof is omitted. Further, the subsequent formation process of the individual communication passages 26 is substantially the same as that of the first embodiment described above, and thus the description thereof is omitted.

  In the present embodiment, when the first mask layer 63 and the second mask layer 68 are thinned by etching, the portion of the second mask layer 68 corresponding to the second mask recess 70 is completely removed. A second mask opening is formed in the portion. For this reason, the shape of the second mask opening is defined by the shape of the second mask recess 70. As a result, variation in the shape of the individual communication path 26 can be suppressed. That is, since the shape of the individual communication path 26 can be defined by one exposure mask pattern, variations in the shape of the individual communication path 26 can be suppressed.

  Incidentally, the shapes of the communication board 24 and the individual communication path 26 are not limited to the above-described embodiments. In the fourth embodiment shown in FIG. 21, the surface on the second liquid chamber 39 side in the periphery of the individual communication path 26 in the thin portion 37 of the communication substrate 24 is formed in a state of being raised to the nozzle plate 21 side. .

  Specifically, as shown in FIG. 21, at the end portion on the other side (the individual communication passage 26 side) in the direction orthogonal to the nozzle row direction of the thin portion 37 of the communication substrate 24 that partitions the second liquid chamber 39, A plateau 80 in which the surface on the second liquid chamber 39 side (that is, the surface on the first surface 51 side) is raised on the same side is formed. In other words, the end on the other side in the direction orthogonal to the nozzle row direction of the surface of the thin portion 37 on the second liquid chamber 39 side is one side (the side opposite to the individual communication path 26, that is, the first liquid chamber 38 side. ) Is arranged closer to the nozzle plate 21 than the end portion. For this reason, the edge part of the other side in the direction orthogonal to the nozzle row direction among the thin parts 37 is thicker than the edge part of one side. The individual communication path 26 is opened in the ceiling surface 81 of the plateau 80. That is, the individual communication path 26 is formed on the plateau 80 of the thin portion 37. For this reason, the length of the individual communication path 26 can be made longer than that in the first embodiment. Thereby, the flow resistance and inertance in the individual communication path 26 can be further increased, and the ink ejection characteristics can be further improved. An inclined surface 53 is formed on the surface of the thin wall portion 37 on the second liquid chamber 39 side so as to be inclined downward from the end of the ceiling surface 81 of the plateau 80 in the direction orthogonal to the nozzle row direction.

  In addition, the individual communication passage 26 in the present embodiment hardly sags at the opening edge on the second liquid chamber 39 side and extends substantially perpendicular to the first surface 51 (or the second surface 52). It is a flow path. That is, the sagging of the opening of the individual communication path 26 is further suppressed. For this reason, the flow rate of the ink from the reservoir toward the pressure chamber 30 through the individual communication path 26 can be further increased, and bubbles can be further suppressed from remaining in the reservoir-side opening of the individual communication path 26. Of the isolation walls 55 that separate the adjacent individual communication passages 26, the end portion on the second liquid chamber 39 side is such that the isolation wall 55 sags toward the second surface 52 side (this embodiment). In the form, a U-shaped sag portion 60) is formed. Other configurations are the same as those of the first embodiment described above, and thus description thereof is omitted.

  Next, the process of forming the individual communication path 26 in this embodiment will be described in detail. 22 to 29 are state transition diagrams in a cross section of the communication board 24 in the present embodiment.

  Also in this embodiment, the first mask layer 63 is formed on the first surface 51 of the communication substrate 24 and the second mask layer is formed on the second surface 52 of the communication substrate 24 as in the above-described embodiments. 68 is formed. Here, as shown in FIG. 22, the first mask layer 63 in the present embodiment is half-etched so that the first mask layer 63 in the region that becomes the second liquid chamber 39 (thin wall portion 37) It is formed so as to become thinner stepwise. Specifically, the first mask first recess 82 formed in a recessed state in the region of the first mask layer 63 that becomes the second liquid chamber 39 (thin wall portion 37), and the second liquid chamber 39 (thin wall). A first mask second recess 83 formed in a further recessed state in a region outside the ceiling surface 81 of the plateau 80 in the region to be the portion 37) is formed. That is, the first mask second recess 83 is formed inside the first mask first recess 82. Further, in the region to be the inclined surface 53, a thick portion thicker than the first mask layer 63 in the first mask second recess 83 is comb-like in the first mask first recess 82. Is formed. That is, the region that becomes the inclined surface 53 is a comb-tooth region 66 in which the thick portion of the first mask layer 63 is formed in a comb-tooth shape. Similarly to the second embodiment shown in FIG. 13, the second mask layer 68 is provided with a second mask first opening 69a on the other side of the region where the individual communication path 26 is formed. A second mask second opening 69b is formed on the side, and a second mask recess 70 is formed therebetween.

  If the mask layer as described above is formed on the communication substrate 24, the through-hole 72 is formed in the communication substrate 24 in the through-hole forming step as in the first embodiment. Specifically, as shown in FIG. 23, first, in a portion corresponding to the second mask first opening 69a, a small-diameter basic hole 71 is formed in the communication substrate 24 from the first surface 51 side by a laser. Next, as shown in FIG. 24, the communication substrate 24 is exposed to the etching solution to widen the diameter (flow channel cross-sectional area) of the basic hole 71. As a result, a through hole 72 is formed in which the shape of the cross section of the flow path is aligned with the shape of the second mask opening 69. At this time, as in the second embodiment, since the communication substrate 24 exposed to the second mask second opening 69b is exposed to the etching solution, the dimple 78 slightly recessed from the second surface 52 in this portion. Is formed.

  Next, the first mask layer 63 and the second mask layer 68 are thinned by etching. As a result, as shown in FIG. 25, the portion of the first mask layer 63 corresponding to the first mask second recess 83 on the first surface 51 is completely removed, and the first mask is formed on the portion. An opening 83 'is formed. At this time, a region corresponding to the ceiling surface 81 of the plateau 80 is in a state of being covered with the first mask layer 63 without being opened. In addition, in the second surface 52, as in the second embodiment, the second mask layer 68 corresponding to the second mask recess 70 is completely removed, and the second mask recess is formed in the portion. 70, a second mask opening 69 'is formed in which the second mask first opening 69a and the second mask second opening 69b are integrated. In this embodiment, the second mask opening 69 ′ is also larger than the opening area of the through hole 72 on the second surface 52 side and includes the opening of the through hole 72.

  Then, with the first mask opening 83 ′ formed in the first mask layer 63 and the second mask opening 69 ′ formed in the second mask layer 68, the flow proceeds to the flow path space forming step. The flow channel space forming step in the present embodiment is a first flow channel space forming step of denting a region (region deviating from a region that becomes the ceiling surface 81 of the plateau 80) from the through hole 72 in the first surface 51. And a second flow path space forming step of recessing a region corresponding to the flow path space after the first flow path space forming step. In the first flow path space forming step, the communication substrate 24 is exposed to an etching solution, and a region corresponding to the first mask opening 83 ′ and a region corresponding to the second mask opening 69 ′ of the communication substrate 24 are etched. As a result, as shown in FIG. 26, the region outside the region that becomes the ceiling surface 81 of the plateau 80 is etched, and the communication substrate 24 in the region is scraped in the thickness direction, and the comb-tooth region 66 has the inclined surface 53 ′. Is formed. Further, the region corresponding to the second mask opening 69 ′ of the communication substrate 24 is etched, and the diameter (flow channel cross-sectional area) of the through hole 72 is expanded from the second surface 52 side. That is, an intermediate flow path portion 77 having a flow path cross-sectional area equal to the opening area of the second mask opening 69 ′ is formed from the opening on the second surface 52 side to the middle on the first surface 51 side. At this time, a second sag surface 76 is formed at the end of the intermediate flow path 77 on the first surface 51 side.

  If the intermediate flow path portion 77 is formed from the opening on the second surface 52 side to the middle on the first surface 51 side, the first mask layer 63 and the second mask layer 68 are further thinned by etching. As a result, as shown in FIG. 27, the first mask layer 63 in the portion corresponding to the first mask first recess 82 is completely removed on the first surface 51, and the first mask is applied to the portion. An opening 82 'is formed. On the other hand, on the second surface 52, the second mask layer 68 becomes thin while maintaining the shape of the second mask opening 69 '. In this state, the process proceeds to the second flow path space forming step. In the second flow path space forming step, the communication substrate 24 is again exposed to the etching solution, and the region corresponding to the first mask opening 82 ′ and the region corresponding to the second mask opening 69 ′ of the communication substrate 24 are etched. . As a result, as shown in FIG. 28, the communication substrate 24 in the first mask opening 82 ′ is generally recessed from the first surface 51 in the plate thickness direction. That is, the region outside the region that becomes the ceiling surface 81 of the plateau 80 etched in the first flow path space forming step is further recessed in the plate thickness direction. Further, the region that becomes the ceiling surface 81 of the plateau 80 that has not been etched in the first flow path space forming step is also recessed in the plate thickness direction. Further, the edge of the opening on the first surface 51 side of the through hole 72 begins to sag, and the isolation wall 55 ′ that isolates the through holes 72 starts to sag downward. On the other hand, in the region corresponding to the second mask opening 69 ′ of the communication substrate 24, the etching progresses and the intermediate flow path portion 77 becomes longer. Along with this, the second sag surface 76 moves to the first surface 51 side.

  When the etching further proceeds from this state, as shown in FIG. 29, the communication substrate 24 in the region corresponding to the first mask opening 82 'is further shaved in the plate thickness direction, and a plateau 80 is formed. Further, although the sagging of the opening edge of the through hole 72 on the first surface 51 side further progresses, this sagging is almost lost as the diameter of the through hole 72 of the communication substrate 24 increases. That is, etching from the opening on the first surface 51 side and the opening on the second surface 52 side of the through hole 72 proceeds, and the sagging surface in the through hole 72 disappears. And the diameter (flow-path cross-sectional area) of the through-hole 72 spreads, and the separate communicating path 26 is formed. Further, a sag portion 60 that sags toward the second surface 52 side is formed in the isolation wall 55 that separates the individual communication paths 26 from each other. Finally, by removing the first mask layer 63 and the second mask layer 68, the communication substrate 24 as shown in FIG. 21 is created.

  Also in the method for manufacturing the recording head 3 in the present embodiment, in the flow path space forming step of forming the second liquid chamber 39 by being depressed halfway from the first surface 51 of the communication substrate 24 in the plate thickness direction. Since the individual communication passages 26 are formed by expanding the cross-sectional area of the holes 72, the sagging of the openings of the individual communication passages 26 can be suppressed. As a result, the opening area of the individual communication passage 26 on the second liquid chamber 39 side can be reduced and the length of the first flow path portion 56 can be increased. In particular, in the present embodiment, in the second flow path space forming step, the flow passage cross-sectional area of the through hole 72 is widened to form the individual communication passage 26, so the individual communication passage 26 is formed on the plateau 80 of the thin portion 37. can do. Thereby, the length of the individual communication path 26 can be further increased. As a result, the flow rate of ink from the second liquid chamber 39 toward the pressure chamber 30 can be further increased, and bubbles can be more reliably suppressed from remaining in the reservoir-side opening of the individual communication path 26. Further, the flow resistance and inertance in the individual communication path 26 can be further increased, and the ink ejection characteristics can be further improved.

  Further, in the fifth embodiment shown in FIG. 30, a narrowed portion 58 having a narrow channel cross-sectional area is formed in the middle of the individual communication passage 26 in the thin portion 37 of the communication substrate 24.

  Specifically, as shown in FIG. 30, as in the fourth embodiment, a plateau 80 is formed at the other end of the thin portion 37 in the direction orthogonal to the nozzle row direction. The communication path 26 is opened. Further, the individual communication path 26 in the present embodiment is substantially perpendicular to the second surface 52 (or the first surface 51) from the opening on the second surface 52 side to the middle on the first surface 51 side. The extended first flow path part 56, the narrowed part 58 having a narrower channel cross-sectional area than the first flow path part 56, and the end of the narrowed part 58 on the second liquid chamber 39 side are the same. And a second flow path portion 57 having a diameter expanded toward the side. More specifically, the first sag surface inclined from the opening edge on the first surface 51 side to the narrowed portion 58 is formed on one side wall surface in the direction orthogonal to the nozzle row direction among the wall surfaces defining the individual communication passage 26. 75 is formed. The first sag surface 75 divides one surface of the second flow path portion 57 in the direction orthogonal to the nozzle row direction. In addition, among the wall surfaces that define the end portion of the narrowed portion 58 on the first flow path portion side, one wall surface in the direction orthogonal to the nozzle row direction is directed toward the same wall surface of the first flow path portion 56. An inclined second sag surface 76 is formed. In other words, the second sag surface 76 defines a surface on one side in a direction perpendicular to the nozzle row direction in the lower portion of the narrowed portion 58 (the portion on the first flow path portion 56 side). Thus, by providing the narrowed portion 58 in the individual communication path 26, the flow resistance and inertance in the individual communication path 26 can be further increased, and the ink ejection characteristics can be further improved. Since other configurations are the same as those of the above-described fourth embodiment, description thereof is omitted.

  Next, the process of forming the individual communication path 26 in this embodiment will be described in detail. 31 to 37 are state transition diagrams in the cross section of the communication board 24 in the present embodiment.

  Also in the present embodiment, as in the fourth embodiment described above, the first mask layer 63 is formed on the first surface 51 of the communication substrate 24, and the second mask 52 is formed on the second surface 52 of the communication substrate 24. A mask layer 68 is formed. Here, as shown in FIG. 31, the second mask layer 68 in the present embodiment has a second mask layer 68 on the other side of the region where the individual communication passages 26 are formed, as in the fourth embodiment shown in FIG. Two mask first openings 69a are formed, and a second mask second opening 69b is formed on one side. On the other hand, the second mask recess 70 formed between them is formed shallower than in the fourth embodiment. Note that the shape of the first mask layer 63, that is, the shape of the first mask first recess 82, the shape of the first mask second recess 83, and the like are the same as those in the first embodiment described above. Omitted.

  When the mask layer as described above is formed on the communication substrate 24, the through hole 72 is formed in the communication substrate 24 in the through hole formation step, as in the fourth embodiment. That is, first, in a portion corresponding to the second mask first opening 69a, a small-diameter basic hole 71 is formed in the communication substrate 24 from the first surface 51 side by a laser, and the communication substrate 24 is exposed to an etching solution to form a base. The diameter (channel cross-sectional area) of the hole 71 is increased. As a result, as shown in FIG. 32, a through hole 72 is formed in which the cross-sectional shape of the flow path is aligned with the shape of the second mask opening 69. Further, a dimple 78 that is slightly recessed from the second surface 52 is formed at a portion corresponding to the second mask second opening 69b.

  Next, the first mask layer 63 and the second mask layer 68 are thinned by etching. As a result, as shown in FIG. 33, in the first surface 51, as in the fourth embodiment, the portion of the first mask layer 63 corresponding to the first mask second recess 83 is completely removed. Thus, a first mask opening 83 ′ is formed in the portion. On the other hand, on the second surface 52, the portion of the second mask layer 68 corresponding to the second mask recess 70 remains without being removed. In other words, the shapes of the second mask first opening 69a, the second mask second opening 69b, and the second mask recess 70 are maintained.

  In this state, the process proceeds to the flow path space forming step. Similarly to the fourth embodiment, the flow path space forming step in the present embodiment is recessed in a region that is out of the through hole 72 in the first surface 51 (region that is out of the region that becomes the ceiling surface 81 of the plateau 80). The first flow path space forming step and the second flow path space forming step of recessing the region corresponding to the flow path space after the first flow path space forming step are included. In the first flow path space forming step, the communication substrate 24 is exposed to an etching solution, and a region corresponding to the first mask opening 83 ′ and a region corresponding to the second mask opening 69 ′ of the communication substrate 24 are etched. As a result, as shown in FIG. 34, a region outside the region that becomes the ceiling surface 81 of the plateau 80 is etched, and the communication substrate 24 in the region is scraped in the thickness direction, and the comb-tooth region 66 has an inclined surface 53 ′. Is formed. Here, since the shape of the second mask layer 68 is maintained, the diameter of the through hole 72 (channel cross-sectional area) is slightly expanded, and the depth of the dimple 78 is slightly increased. However, these shapes do not change significantly.

  Thereafter, the first mask layer 63 and the second mask layer 68 are further thinned by etching. As a result, as shown in FIG. 35, the first mask layer 63 in the portion corresponding to the first mask first recess 82 is completely removed on the first surface 51, and the first mask is applied to the portion. An opening 82 'is formed. Further, in the second surface 52, the second mask layer 68 corresponding to the second mask recess 70 is completely removed, and the second mask recess 70 and the second mask first opening are formed in the corresponding portion. A second mask opening 69 ′ in which 69 a and the second mask second opening 69 b are integrated is formed. In this embodiment, the second mask opening 69 ′ is also larger than the opening area of the through hole 72 on the second surface 52 side and includes the opening of the through hole 72. In this state, the process proceeds to the second flow path space forming step. In the second flow path space forming step, as shown in FIG. 36, the communication substrate 24 is again exposed to the etching solution, and the region corresponding to the first mask opening 82 ′ of the communication substrate 24 and the second mask opening 69 ′. The region corresponding to is etched. Thereby, like the fourth embodiment, the communication substrate 24 in the first mask opening 82 ′ is generally recessed from the first surface 51 in the plate thickness direction. Further, the edge of the opening on the first surface 51 side of the through hole 72 starts to sag, and the isolation wall 55 ′ that isolates the through holes 72 starts to sag downward. On the other hand, in the region corresponding to the second mask opening 69 ′ of the communication substrate 24, the diameter of the through hole 72 (channel cross-sectional area) is expanded from the second surface 52 side by etching. That is, an intermediate flow path portion 77 having a flow path cross-sectional area equal to the opening area of the second mask opening 69 ′ is formed from the opening on the second surface 52 side to the middle on the first surface 51 side. At this time, a second sag surface 76 is formed at the boundary between the intermediate flow path portion 77 and the remaining portion of the through hole 72.

  When the etching further proceeds from this state, as shown in FIG. 37, the communication substrate 24 in the region corresponding to the first mask opening 82 'is further shaved in the plate thickness direction, and a plateau 80 is formed. Further, the sagging of the opening edge of the through hole 72 on the first surface 51 side further proceeds to become the first sagging surface 75. Thereby, the 2nd flow path part 57 of the separate communicating path 26 is formed. Further, etching proceeds from the opening of the through hole 72 on the second surface 52 side toward the first surface 51 side, and the second sag surface 76 moves to the first surface 51 side. As a result, the diameter (channel cross-sectional area) of the through-hole 72 is expanded to form the first channel portion 56, and between the first channel portion 56 and the second channel portion 57. A narrowed portion 58 is formed. That is, the individual communication path 26 is formed. Further, a sag portion 60 that sags toward the second surface 52 side is formed in the isolation wall 55 that separates the individual communication paths 26 from each other. Finally, by removing the first mask layer and the second mask layer 68, the communication substrate 24 as shown in FIG. 30 is created.

  Also in the method for manufacturing the recording head 3 in the present embodiment, in the flow path space forming step of forming the second liquid chamber 39 by being depressed halfway from the first surface 51 of the communication substrate 24 in the plate thickness direction. Since the individual communication passages 26 are formed by expanding the cross-sectional area of the holes 72, the sagging of the openings of the individual communication passages 26 can be suppressed. As a result, the opening area of the individual communication passage 26 on the second liquid chamber 39 side can be reduced and the length of the first flow path portion 56 can be increased. In particular, in the present embodiment, in the second flow path space forming step, the flow passage cross-sectional area of the through hole 72 is widened to form the individual communication passage 26, so the individual communication passage 26 is formed on the plateau 80 of the thin portion 37. can do. Thereby, the length of the individual communication path 26 can be further increased. Further, since the narrowed portion 58 is formed in the individual communication path 26, the flow rate of the ink from the second liquid chamber 39 toward the pressure chamber 30 can be further increased. As a result, it is possible to further suppress bubbles from staying in the reservoir side opening of the individual communication path 26. Further, the flow resistance and inertance in the individual communication path 26 can be further increased, and the ink ejection characteristics can be further improved.

  By the way, in each above-mentioned embodiment, although the inclined surface 53 inclined toward the separate communicating path 26 side was provided in the thin part 37, it is not restricted to this. For example, in the sixth embodiment shown in FIG. 38, the inclined surface is not provided on the surface of the thin portion 37 on the nozzle plate 21 side. That is, the surface on the nozzle plate 21 side of the thin portion 37 in this embodiment is formed substantially flat from the edge of the opening of the individual communication passage 26 to the first liquid chamber 38. Also in this embodiment, the individual communication path 26 has a shape in which the sagging of the opening edge is suppressed and the first flow path portion 56 is longer than the conventional individual communication path as shown in FIG. It has become. The other shapes are the same as those in the first embodiment described above, and thus the description thereof is omitted. The method for forming such a shape on the communication substrate 24 is, for example, in the first to third embodiments described above, for example, the comb-shaped first mask thick portion 65 in the comb-tooth region 66. It can be formed by adjusting the width and interval. Since the other manufacturing methods of the recording head 3 are the same as those in any of the first to third embodiments described above, the description thereof is omitted. Note that by changing the shape or the like of the first mask layer 63, the presence or absence of an inclined surface, the inclination angle of the inclined surface, or the like can be changed.

  In each of the above-described embodiments, the recording head 3 in which the driving IC 34 is provided on the sealing plate 33 is illustrated, but the present invention is not limited to this. For example, it is possible to employ a configuration in which a driving IC is not provided on the sealing plate, but a circuit to be a driving IC is formed on the sealing plate itself. Moreover, it is also possible to adopt a configuration in which a wiring board such as an FPC (flexible printed circuit board) provided with a driving IC is connected to the pressure chamber forming board without forming wirings and circuits on the sealing plate. In this configuration, it is also possible to adopt a configuration in which a concave housing space is formed on the lower surface (surface on the piezoelectric element side) of the sealing plate and the piezoelectric element is housed in the housing space.

  Further, in each of the above-described embodiments, the so-called flexural vibration type piezoelectric element 32 is illustrated as an actuator for driving the drive region 35, but is not limited thereto. For example, various actuators such as a so-called longitudinal vibration type piezoelectric element, a heating element, and an electrostatic actuator that varies the volume of the pressure chamber by using electrostatic force can be employed.

  In the above description, the ink jet recording head 3 has been described as an example of the liquid ejecting head, but the present invention can also be applied to other liquid ejecting heads. For example, a color material ejecting head used for manufacturing a color filter such as a liquid crystal display, an electrode material ejecting head used for forming an electrode such as an organic EL (Electro Luminescence) display, FED (surface emitting display), a biochip (biochemical element) The present invention can also be applied to bioorganic matter ejecting heads and the like used in the production of In a color material ejecting head for a display manufacturing apparatus, a solution of each color material of R (Red), G (Green), and B (Blue) is ejected as a kind of liquid. Further, an electrode material ejecting head for an electrode forming apparatus ejects a liquid electrode material as a kind of liquid, and a bioorganic matter ejecting head for a chip manufacturing apparatus ejects a bioorganic solution as a kind of liquid.

  DESCRIPTION OF SYMBOLS 1 ... Printer, 2 ... Recording medium, 3 ... Recording head, 4 ... Carriage, 5 ... Carriage moving mechanism, 6 ... Conveying mechanism, 7 ... Ink cartridge, 8 ... Timing belt, 9 ... Pulse motor, 10 ... Guide rod, 14 ... actuator unit, 15 ... flow path unit, 16 ... head case, 17 ... accommodating space, 18 ... liquid introduction path, 21 ... nozzle plate, 22 ... nozzle, 24 ... communication substrate, 25 ... common liquid chamber, 26 ... individual communication Passage, 27 ... nozzle communication passage, 29 ... pressure chamber forming substrate, 30 ... pressure chamber, 31 ... vibration plate, 32 ... piezoelectric element, 33 ... sealing plate, 34 ... drive IC, 35 ... drive region, 36 ... non-drive Area 37, thin portion 38 38 first liquid chamber 39 second liquid chamber 40 bump electrode 41 individual terminal 42 common terminal 43 photosensitive adhesive 45 through wiring 46 46 Surface side wiring, 47 ... IC terminal, 48 ... adhesive, 51 ... first surface, 52 ... second surface, 53 ... inclined surface, 55 ... isolation wall, 56 ... first flow path portion, 57 ... first. 2 flow path parts, 58 ... constriction part, 59 ... sagging surface, 60 ... sagging part, 63 ... first mask layer, 64 ... first mask recess, 64 '... first mask opening, 65 ... first , 66 ... comb region, 68 ... second mask layer, 69 ... second mask opening, 69a ... second mask first opening, 69b ... second mask second opening, 70 ... 2nd mask recessed part, 71 ... base hole, 72 ... through-hole, 75 ... 1st sag surface, 76 ... 2nd sag surface, 77 ... intermediate flow path part, 78 ... dimple, 80 ... plateau, 81 ... ceiling Surface, 82 ... first mask first recess, 82 '... first mask opening, 83 ... first mask second recess, 83' ... first mask opening, 0 ... communication board, 91 ... thin portion, 92 ... individually communicating passage, 93 ... common liquid chamber, 94 ... pressure chamber, 95 ... sagging face

Claims (2)

A channel space that is recessed from the first surface of the substrate toward the second surface on the opposite side to the middle in the thickness direction;
A liquid jet head manufacturing method comprising: an individual communication path that penetrates the substrate from the flow path space to the second surface side,
A through hole forming step of forming a through hole in the substrate;
A first mask layer is formed on the first surface of the substrate, a second mask layer is formed on the second surface of the substrate, the substrate is exposed to an etching solution, and the substrate Including a channel space forming step of forming a channel space by indenting from the first surface to the middle of the plate thickness direction,
In the flow path space forming step, in a state where a mask opening that is larger than an opening area of the through hole on the second surface side and includes the opening of the through hole is formed in the second mask layer. A method of manufacturing a liquid jet head, wherein the individual communication passages are formed by expanding a flow passage cross-sectional area of the through holes by exposing a substrate to an etching solution. The flow path space forming step includes a first flow path space forming step for denting a region off the through hole in the first surface, and a first flow path space forming step, and then the flow path space forming step And a second flow path space forming step for recessing the corresponding region,
2. The method of manufacturing a liquid jet head according to claim 1, wherein in the second flow path space forming step, the flow passage cross-sectional area of the through hole is widened to form the individual communication path.

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