JP2018032601A - 反射電極およびＡｌ合金スパッタリングターゲット - Google Patents
反射電極およびＡｌ合金スパッタリングターゲット Download PDFInfo
- Publication number
- JP2018032601A JP2018032601A JP2016166148A JP2016166148A JP2018032601A JP 2018032601 A JP2018032601 A JP 2018032601A JP 2016166148 A JP2016166148 A JP 2016166148A JP 2016166148 A JP2016166148 A JP 2016166148A JP 2018032601 A JP2018032601 A JP 2018032601A
- Authority
- JP
- Japan
- Prior art keywords
- film
- reflective
- reflective electrode
- organic
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000838 Al alloy Inorganic materials 0.000 title claims abstract description 32
- 238000005477 sputtering target Methods 0.000 title claims description 11
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 14
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 90
- 238000000034 method Methods 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- -1 α-naphthyl phenyl diamine Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/023—Alloys based on aluminium
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016166148A JP2018032601A (ja) | 2016-08-26 | 2016-08-26 | 反射電極およびＡｌ合金スパッタリングターゲット |
| CN201780052201.8A CN109644536B (zh) | 2016-08-26 | 2017-08-22 | 反射电极和Al合金溅射靶 |
| KR1020197005340A KR102150380B1 (ko) | 2016-08-26 | 2017-08-22 | 반사 전극 및 Al 합금 스퍼터링 타깃 |
| PCT/JP2017/029839 WO2018038067A1 (ja) | 2016-08-26 | 2017-08-22 | 反射電極およびＡｌ合金スパッタリングターゲット |
| TW106128892A TWI650230B (zh) | 2016-08-26 | 2017-08-25 | 反射電極及鋁合金濺鍍靶 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016166148A JP2018032601A (ja) | 2016-08-26 | 2016-08-26 | 反射電極およびＡｌ合金スパッタリングターゲット |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2018032601A true JP2018032601A (ja) | 2018-03-01 |
Family
ID=61244858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016166148A Pending JP2018032601A (ja) | 2016-08-26 | 2016-08-26 | 反射電極およびＡｌ合金スパッタリングターゲット |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2018032601A (zh) |
| KR (1) | KR102150380B1 (zh) |
| CN (1) | CN109644536B (zh) |
| TW (1) | TWI650230B (zh) |
| WO (1) | WO2018038067A1 (zh) |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3634208B2 (ja) * | 1999-09-21 | 2005-03-30 | 真空冶金株式会社 | 液晶ディスプレイ用の電極・配線材及びスパッタリングターゲット |
| JP3940385B2 (ja) * | 2002-12-19 | 2007-07-04 | 株式会社神戸製鋼所 | 表示デバイスおよびその製法 |
| KR100546662B1 (ko) * | 2003-08-05 | 2006-01-26 | 엘지전자 주식회사 | 유기 ｅｌ 소자 |
| JP4117001B2 (ja) * | 2005-02-17 | 2008-07-09 | 株式会社神戸製鋼所 | 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット |
| CN101281913A (zh) * | 2005-02-17 | 2008-10-08 | 株式会社神户制钢所 | 显示器和用于制备该显示器的溅射靶 |
| JP2006236839A (ja) * | 2005-02-25 | 2006-09-07 | Mitsubishi Electric Corp | 有機電界発光型表示装置 |
| WO2009044675A1 (ja) * | 2007-10-02 | 2009-04-09 | Ulvac, Inc. | 有機ｅｌ素子、有機ｅｌ素子製造方法 |
| JP5007246B2 (ja) * | 2008-01-31 | 2012-08-22 | 三菱電機株式会社 | 有機電界発光型表示装置及びその製造方法 |
| JP2010225572A (ja) * | 2008-11-10 | 2010-10-07 | Kobe Steel Ltd | 有機ｅｌディスプレイ用の反射アノード電極および配線膜 |
| JP2010135300A (ja) * | 2008-11-10 | 2010-06-17 | Kobe Steel Ltd | 有機ｅｌディスプレイ用の反射アノード電極およびその製造方法 |
| JP2010192413A (ja) * | 2009-01-22 | 2010-09-02 | Sony Corp | 有機電界発光素子および表示装置 |
| JP5235011B2 (ja) * | 2009-11-16 | 2013-07-10 | 株式会社神戸製鋼所 | 有機ｅｌディスプレイ用の反射アノード電極 |
| JP2012110904A (ja) | 2010-11-19 | 2012-06-14 | Neturen Co Ltd | 金属パイプ成形体、金属パイプ構造体及びそれらの製造方法 |
| JP2012211378A (ja) * | 2011-03-31 | 2012-11-01 | Kobe Steel Ltd | Ｃｕ合金膜、及びそれを備えた表示装置または電子装置 |
| CN103548420B (zh) * | 2011-05-24 | 2016-08-17 | 株式会社神户制钢所 | 含有有机el显示器用的反射阳极电极的配线结构 |
| JP5141794B2 (ja) * | 2011-06-10 | 2013-02-13 | 三菱マテリアル株式会社 | 有機ｅｌ用透明導電膜およびこの透明導電膜を用いた有機ｅｌ素子 |
| JP5906159B2 (ja) * | 2012-09-13 | 2016-04-20 | 株式会社神戸製鋼所 | 有機ＥＬ素子のアノード電極用Ａｌ合金膜、有機ＥＬ素子およびＡｌ合金スパッタリングターゲット |
| WO2014080933A1 (ja) * | 2012-11-21 | 2014-05-30 | 株式会社コベルコ科研 | 表示装置または入力装置に用いられる電極、および電極形成用スパッタリングターゲット |
| US9845529B2 (en) * | 2013-11-12 | 2017-12-19 | Kobe Steel, Ltd. | Electrode and method for producing same |
-
2016
- 2016-08-26 JP JP2016166148A patent/JP2018032601A/ja active Pending
-
2017
- 2017-08-22 WO PCT/JP2017/029839 patent/WO2018038067A1/ja not_active Ceased
- 2017-08-22 KR KR1020197005340A patent/KR102150380B1/ko active Active
- 2017-08-22 CN CN201780052201.8A patent/CN109644536B/zh active Active
- 2017-08-25 TW TW106128892A patent/TWI650230B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109644536B (zh) | 2021-03-19 |
| KR102150380B1 (ko) | 2020-09-01 |
| WO2018038067A1 (ja) | 2018-03-01 |
| TW201815567A (zh) | 2018-05-01 |
| KR20190034255A (ko) | 2019-04-01 |
| TWI650230B (zh) | 2019-02-11 |
| CN109644536A (zh) | 2019-04-16 |
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