JP2018019084A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2018019084A5 JP2018019084A5 JP2017168422A JP2017168422A JP2018019084A5 JP 2018019084 A5 JP2018019084 A5 JP 2018019084A5 JP 2017168422 A JP2017168422 A JP 2017168422A JP 2017168422 A JP2017168422 A JP 2017168422A JP 2018019084 A5 JP2018019084 A5 JP 2018019084A5
- Authority
- JP
- Japan
- Prior art keywords
- current control
- control transistor
- transistor
- light emitting
- electrically connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 claims 9
Claims (8)
電流制御用トランジスタと、
発光素子と、を有し、
前記スイッチング用トランジスタのソース又はドレインの一方は、第１の配線と電気的に接続され、
前記スイッチング用トランジスタのゲートは、第２の配線と電気的に接続され、
前記電流制御用トランジスタのソース又はドレインの一方は、前記発光素子の陽極と電気的に接続され、
前記電流制御用トランジスタのソース又はドレインの他方は、第３の配線と電気的に接続され、
前記電流制御用トランジスタのチャネル形成領域は、蛇行形状を有し、
前記電流制御用トランジスタは、飽和領域で動作することを特徴とする発光装置。 A switching transistor ;
A current control transistor ;
A light emitting element,
One of the source and the drain of the switching transistor is electrically connected to the first wiring,
A gate of the switching transistor is electrically connected to the second wiring;
One of the source and drain of the current control transistor is electrically connected to the anode of the light emitting element,
The other of the source and the drain of the current control transistor is electrically connected to a third wiring,
Channel forming region of the current controlling transistor has a meandering shape,
The light-emitting device , wherein the current control transistor operates in a saturation region .
電流制御用トランジスタと、A current control transistor;
発光素子と、を有し、A light emitting element,
前記スイッチング用トランジスタのソース又はドレインの一方は、第１の配線と電気的に接続され、One of the source and the drain of the switching transistor is electrically connected to the first wiring,
前記スイッチング用トランジスタのゲートは、第２の配線と電気的に接続され、A gate of the switching transistor is electrically connected to the second wiring;
前記電流制御用トランジスタのソース又はドレインの一方は、前記発光素子の陽極と電気的に接続され、One of the source and drain of the current control transistor is electrically connected to the anode of the light emitting element,
前記電流制御用トランジスタのソース又はドレインの他方は、第３の配線と電気的に接続され、The other of the source and the drain of the current control transistor is electrically connected to a third wiring,
前記電流制御用トランジスタのチャネル形成領域のチャネル長は、前記スイッチング用トランジスタのチャネル形成領域のチャネル長より長く、The channel length of the channel formation region of the current control transistor is longer than the channel length of the channel formation region of the switching transistor,
前記電流制御用トランジスタのチャネル形成領域は、前記チャネル長がチャネル幅より長くなるような形状を有し、The channel formation region of the current control transistor has a shape such that the channel length is longer than the channel width,
前記電流制御用トランジスタは、飽和領域で動作することを特徴とする発光装置。The light-emitting device, wherein the current control transistor operates in a saturation region.
電流制御用トランジスタと、
発光素子と、を有し、
前記スイッチング用トランジスタのソース又はドレインの一方は、第１の配線と電気的に接続され、
前記スイッチング用トランジスタのゲートは、第２の配線と電気的に接続され、
前記電流制御用トランジスタのソース又はドレインの一方は、前記発光素子の陰極と電気的に接続され、
前記電流制御用トランジスタのソース又はドレインの他方は、第３の配線と電気的に接続され、
前記電流制御用トランジスタのチャネル形成領域は、蛇行形状を有し、
前記電流制御用トランジスタは、飽和領域で動作することを特徴とする発光装置。 A switching transistor ;
A current control transistor ;
A light emitting element,
One of the source and the drain of the switching transistor is electrically connected to the first wiring,
A gate of the switching transistor is electrically connected to the second wiring;
One of the source or drain of the current control transistor is electrically connected to the cathode of the light emitting element,
The other of the source and the drain of the current control transistor is electrically connected to a third wiring,
Channel forming region of the current controlling transistor has a meandering shape,
The light-emitting device , wherein the current control transistor operates in a saturation region .
電流制御用トランジスタと、A current control transistor;
発光素子と、を有し、A light emitting element,
前記スイッチング用トランジスタのソース又はドレインの一方は、第１の配線と電気的に接続され、One of the source and the drain of the switching transistor is electrically connected to the first wiring,
前記スイッチング用トランジスタのゲートは、第２の配線と電気的に接続され、A gate of the switching transistor is electrically connected to the second wiring;
前記電流制御用トランジスタのソース又はドレインの一方は、前記発光素子の陰極と電気的に接続され、One of the source or drain of the current control transistor is electrically connected to the cathode of the light emitting element,
前記電流制御用トランジスタのソース又はドレインの他方は、第３の配線と電気的に接続され、The other of the source and the drain of the current control transistor is electrically connected to a third wiring,
前記電流制御用トランジスタのチャネル形成領域のチャネル長は、前記スイッチング用トランジスタのチャネル形成領域のチャネル長より長く、The channel length of the channel formation region of the current control transistor is longer than the channel length of the channel formation region of the switching transistor,
前記電流制御用トランジスタのチャネル形成領域は、前記チャネル長がチャネル幅より長くなるような形状を有し、The channel formation region of the current control transistor has a shape such that the channel length is longer than the channel width,
前記電流制御用トランジスタは、飽和領域で動作することを特徴とする発光装置。The light-emitting device, wherein the current control transistor operates in a saturation region.
発光素子と、を有し、
前記電流制御用トランジスタは、前記発光素子に電流を供給する機能を有し、
前記電流制御用トランジスタのチャネル形成領域は、蛇行形状を有し、
前記電流制御用トランジスタは、飽和領域で動作することを特徴とする発光装置。 A current control transistor ;
A light emitting element,
The current control transistor has a function of supplying a current to the light emitting element,
Channel forming region of the current controlling transistor has a meandering shape,
The light-emitting device , wherein the current control transistor operates in a saturation region .
発光素子と、を有し、A light emitting element,
前記電流制御用トランジスタは、前記発光素子に電流を供給する機能を有し、The current control transistor has a function of supplying a current to the light emitting element,
前記電流制御用トランジスタのチャネル形成領域は、チャネル長がチャネル幅より長くなるような形状を有し、The channel formation region of the current control transistor has a shape such that the channel length is longer than the channel width,
前記電流制御用トランジスタは、飽和領域で動作することを特徴とする発光装置。The light-emitting device, wherein the current control transistor operates in a saturation region.
発光素子と、を有し、A light emitting element,
前記電流制御用トランジスタは、前記発光素子に電流を供給する機能を有し、The current control transistor has a function of supplying a current to the light emitting element,
前記電流制御用トランジスタのチャネル形成領域は、蛇行形状を有することを特徴とする発光装置。The light emitting device according to claim 1, wherein a channel formation region of the current control transistor has a meandering shape.
発光素子と、を有し、A light emitting element,
前記電流制御用トランジスタは、前記発光素子に電流を供給する機能を有し、The current control transistor has a function of supplying a current to the light emitting element,
前記電流制御用トランジスタのチャネル形成領域は、チャネル長がチャネル幅より長くなるような形状を有することを特徴とする発光装置。The light emitting device according to claim 1, wherein a channel formation region of the current control transistor has a shape in which a channel length is longer than a channel width.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001344671 | 2001-11-09 | ||
| JP2001344671 | 2001-11-09 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016054981A Division JP2016136641A (en) | 2001-11-09 | 2016-03-18 | Light-emitting device |
Related Child Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018017185A Division JP6306808B1 (en) | 2001-11-09 | 2018-02-02 | Light emitting device |
| JP2018018864A Division JP6383507B2 (en) | 2001-11-09 | 2018-02-06 | Light emitting device |
| JP2018134240A Division JP6608008B2 (en) | 2001-11-09 | 2018-07-17 | Light emitting device |
| JP2018229341A Division JP2019071431A (en) | 2001-11-09 | 2018-12-06 | Light-emitting device |
| JP2018241382A Division JP6622893B2 (en) | 2001-11-09 | 2018-12-25 | Light emitting device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018019084A JP2018019084A (en) | 2018-02-01 |
| JP2018019084A5 true JP2018019084A5 (en) | 2018-08-30 |
| JP6514286B2 JP6514286B2 (en) | 2019-05-15 |
Family
ID=38697587
Family Applications (19)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008087530A Expired - Fee Related JP5111196B2 (en) | 2001-11-09 | 2008-03-28 | Semiconductor device |
| JP2012105184A Withdrawn JP2012195596A (en) | 2001-11-09 | 2012-05-02 | Light-emitting device |
| JP2012233881A Expired - Lifetime JP5459918B2 (en) | 2001-11-09 | 2012-10-23 | Semiconductor device |
| JP2013239679A Expired - Fee Related JP5679535B2 (en) | 2001-11-09 | 2013-11-20 | Light emitting device |
| JP2013239680A Expired - Lifetime JP5568678B2 (en) | 2001-11-09 | 2013-11-20 | Light emitting device |
| JP2014001793A Withdrawn JP2014099635A (en) | 2001-11-09 | 2014-01-08 | Light-emitting device |
| JP2014132514A Expired - Lifetime JP5917612B2 (en) | 2001-11-09 | 2014-06-27 | Light emitting device |
| JP2014231325A Expired - Lifetime JP5784209B2 (en) | 2001-11-09 | 2014-11-14 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
| JP2015094506A Expired - Lifetime JP6053067B2 (en) | 2001-11-09 | 2015-05-05 | Light emitting device and electronic device |
| JP2015106208A Expired - Lifetime JP6096832B2 (en) | 2001-11-09 | 2015-05-26 | Light emitting device |
| JP2016054981A Withdrawn JP2016136641A (en) | 2001-11-09 | 2016-03-18 | Light-emitting device |
| JP2017168422A Expired - Lifetime JP6514286B2 (en) | 2001-11-09 | 2017-09-01 | Light emitting device |
| JP2018017185A Expired - Lifetime JP6306808B1 (en) | 2001-11-09 | 2018-02-02 | Light emitting device |
| JP2018018864A Expired - Lifetime JP6383507B2 (en) | 2001-11-09 | 2018-02-06 | Light emitting device |
| JP2018134240A Expired - Lifetime JP6608008B2 (en) | 2001-11-09 | 2018-07-17 | Light emitting device |
| JP2018229341A Withdrawn JP2019071431A (en) | 2001-11-09 | 2018-12-06 | Light-emitting device |
| JP2018241382A Expired - Lifetime JP6622893B2 (en) | 2001-11-09 | 2018-12-25 | Light emitting device |
| JP2020135660A Expired - Lifetime JP7032625B2 (en) | 2001-11-09 | 2020-08-11 | Light emitting device |
| JP2020151903A Withdrawn JP2021013023A (en) | 2001-11-09 | 2020-09-10 | Light-emitting device |
Family Applications Before (11)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008087530A Expired - Fee Related JP5111196B2 (en) | 2001-11-09 | 2008-03-28 | Semiconductor device |
| JP2012105184A Withdrawn JP2012195596A (en) | 2001-11-09 | 2012-05-02 | Light-emitting device |
| JP2012233881A Expired - Lifetime JP5459918B2 (en) | 2001-11-09 | 2012-10-23 | Semiconductor device |
| JP2013239679A Expired - Fee Related JP5679535B2 (en) | 2001-11-09 | 2013-11-20 | Light emitting device |
| JP2013239680A Expired - Lifetime JP5568678B2 (en) | 2001-11-09 | 2013-11-20 | Light emitting device |
| JP2014001793A Withdrawn JP2014099635A (en) | 2001-11-09 | 2014-01-08 | Light-emitting device |
| JP2014132514A Expired - Lifetime JP5917612B2 (en) | 2001-11-09 | 2014-06-27 | Light emitting device |
| JP2014231325A Expired - Lifetime JP5784209B2 (en) | 2001-11-09 | 2014-11-14 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
| JP2015094506A Expired - Lifetime JP6053067B2 (en) | 2001-11-09 | 2015-05-05 | Light emitting device and electronic device |
| JP2015106208A Expired - Lifetime JP6096832B2 (en) | 2001-11-09 | 2015-05-26 | Light emitting device |
| JP2016054981A Withdrawn JP2016136641A (en) | 2001-11-09 | 2016-03-18 | Light-emitting device |
Family Applications After (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018017185A Expired - Lifetime JP6306808B1 (en) | 2001-11-09 | 2018-02-02 | Light emitting device |
| JP2018018864A Expired - Lifetime JP6383507B2 (en) | 2001-11-09 | 2018-02-06 | Light emitting device |
| JP2018134240A Expired - Lifetime JP6608008B2 (en) | 2001-11-09 | 2018-07-17 | Light emitting device |
| JP2018229341A Withdrawn JP2019071431A (en) | 2001-11-09 | 2018-12-06 | Light-emitting device |
| JP2018241382A Expired - Lifetime JP6622893B2 (en) | 2001-11-09 | 2018-12-25 | Light emitting device |
| JP2020135660A Expired - Lifetime JP7032625B2 (en) | 2001-11-09 | 2020-08-11 | Light emitting device |
| JP2020151903A Withdrawn JP2021013023A (en) | 2001-11-09 | 2020-09-10 | Light-emitting device |
Country Status (2)
| Country | Link |
|---|---|
| JP (19) | JP5111196B2 (en) |
| CN (1) | CN101009322B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101600100B1 (en) | 2009-11-27 | 2016-03-04 | 가부시키가이샤 제이올레드 | Light emitting display device |
| JP5508301B2 (en) * | 2011-01-18 | 2014-05-28 | パナソニック株式会社 | Luminescent display device |
| TWI713943B (en) | 2013-09-12 | 2020-12-21 | 日商新力股份有限公司 | Display device and electronic equipment |
| KR102373901B1 (en) | 2013-09-13 | 2022-03-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light-emitting device |
| KR102238641B1 (en) * | 2014-12-26 | 2021-04-09 | 엘지디스플레이 주식회사 | Thin film transistor array substrate |
| EP3834224A1 (en) * | 2018-08-09 | 2021-06-16 | Array Photonics, Inc. | Hydrogen diffusion barrier for hybrid semiconductor growth |
| KR102738040B1 (en) * | 2019-07-12 | 2024-12-06 | 삼성디스플레이 주식회사 | Thin film transistor and display apparatus including the same and the manufacturing method thereof |
| CN121038520A (en) * | 2019-07-31 | 2025-11-28 | 京东方科技集团股份有限公司 | Display substrate and display device |
| CN113381286B (en) * | 2021-06-02 | 2023-03-03 | 山东大学 | Method for preparing crystal film by ion beam reinforced corrosion |
Family Cites Families (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS548986A (en) * | 1977-06-22 | 1979-01-23 | Nec Corp | Semiconductor device |
| JPS5626468A (en) * | 1979-08-09 | 1981-03-14 | Sharp Corp | Structure of membrane transistor |
| JPS58171860A (en) * | 1982-04-01 | 1983-10-08 | Seiko Epson Corp | Thin film transistor |
| JPH0680828B2 (en) * | 1985-10-18 | 1994-10-12 | 株式会社日立製作所 | Thin film transistor |
| JPS63151083A (en) * | 1986-12-16 | 1988-06-23 | Hitachi Ltd | thin film semiconductor device |
| JPH0258030A (en) * | 1988-08-24 | 1990-02-27 | Hitachi Ltd | liquid crystal display device |
| JP2645663B2 (en) * | 1989-01-24 | 1997-08-25 | 日本電信電話株式会社 | Thin film semiconductor device and method of manufacturing the same |
| JP2622183B2 (en) * | 1990-04-05 | 1997-06-18 | シャープ株式会社 | Active matrix display device |
| JP3357699B2 (en) * | 1992-02-21 | 2002-12-16 | 株式会社東芝 | Liquid crystal display |
| JPH0653441A (en) * | 1992-07-28 | 1994-02-25 | Sony Corp | Cell structure and sram memory cell structure having thin film transistor and formation thereof |
| US5556706A (en) * | 1993-10-06 | 1996-09-17 | Matsushita Electric Industrial Co., Ltd. | Conductive layered product and method of manufacturing the same |
| JP3504993B2 (en) * | 1995-01-20 | 2004-03-08 | 株式会社半導体エネルギー研究所 | Active matrix circuit |
| JP3246189B2 (en) * | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | Semiconductor display device |
| US5608557A (en) * | 1995-01-03 | 1997-03-04 | Xerox Corporation | Circuitry with gate line crossing semiconductor line at two or more channels |
| GB9520888D0 (en) * | 1995-10-12 | 1995-12-13 | Philips Electronics Nv | Electronic devices comprising thin-film circuitry |
| JP3522433B2 (en) * | 1995-12-04 | 2004-04-26 | 株式会社半導体エネルギー研究所 | Thin film semiconductor device |
| JP3522440B2 (en) * | 1996-03-08 | 2004-04-26 | 株式会社半導体エネルギー研究所 | Thin film semiconductor device |
| JP3522442B2 (en) * | 1996-03-11 | 2004-04-26 | 株式会社半導体エネルギー研究所 | Thin film semiconductor device |
| JP3188167B2 (en) * | 1995-12-15 | 2001-07-16 | 三洋電機株式会社 | Thin film transistor |
| JP3520401B2 (en) * | 1996-09-17 | 2004-04-19 | セイコーエプソン株式会社 | Liquid crystal panel substrate, liquid crystal panel using the same, and projection display device |
| CN1170321C (en) * | 1996-11-12 | 2004-10-06 | 国际商业机器公司 | Conductive polymer patterns and their use as electrodes or electrical contacts |
| JPH11133463A (en) * | 1997-10-31 | 1999-05-21 | Semiconductor Energy Lab Co Ltd | Active matrix liquid crystal display device and electronic equipment |
| KR100541253B1 (en) * | 1997-02-17 | 2006-07-10 | 세이코 엡슨 가부시키가이샤 | Display |
| JPH10254410A (en) * | 1997-03-12 | 1998-09-25 | Pioneer Electron Corp | Organic electroluminescent display device, and driving method therefor |
| US5981970A (en) * | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
| JP3520396B2 (en) * | 1997-07-02 | 2004-04-19 | セイコーエプソン株式会社 | Active matrix substrate and display device |
| JP3536301B2 (en) * | 1997-08-21 | 2004-06-07 | セイコーエプソン株式会社 | Display device |
| JPH11194363A (en) * | 1997-12-26 | 1999-07-21 | Seiko Epson Corp | Pattern forming method, active matrix substrate and manufacturing method thereof, and electronic device |
| GB9808061D0 (en) * | 1998-04-16 | 1998-06-17 | Cambridge Display Tech Ltd | Polymer devices |
| JP3276930B2 (en) * | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | Transistor and semiconductor device |
| JP2968269B2 (en) * | 1998-11-26 | 1999-10-25 | 株式会社日立製作所 | Manufacturing method of liquid crystal display device |
| JP2000214800A (en) * | 1999-01-20 | 2000-08-04 | Sanyo Electric Co Ltd | Electroluminescence display device |
| JP2000223279A (en) * | 1999-01-29 | 2000-08-11 | Sanyo Electric Co Ltd | Electroluminescent display device |
| JP2000243963A (en) * | 1999-02-17 | 2000-09-08 | Sanyo Electric Co Ltd | Thin film transistor and display unit |
| JP4229513B2 (en) * | 1999-03-10 | 2009-02-25 | 三洋電機株式会社 | Active EL display device |
| JP2000347624A (en) * | 1999-03-31 | 2000-12-15 | Seiko Epson Corp | Electroluminescence display device |
| JP4246845B2 (en) * | 1999-04-22 | 2009-04-02 | Ｔｄｋ株式会社 | Drive device for organic EL element and organic EL display device |
| JP4337171B2 (en) * | 1999-06-14 | 2009-09-30 | ソニー株式会社 | Display device |
| JP4877675B2 (en) * | 1999-06-28 | 2012-02-15 | 株式会社半導体エネルギー研究所 | Method for manufacturing electro-optical device |
| US6545291B1 (en) * | 1999-08-31 | 2003-04-08 | E Ink Corporation | Transistor design for use in the construction of an electronically driven display |
| JP2001109405A (en) * | 1999-10-01 | 2001-04-20 | Sanyo Electric Co Ltd | EL display device |
| JP2001111053A (en) | 1999-10-04 | 2001-04-20 | Sanyo Electric Co Ltd | Thin film transistor and display device |
| JP3548063B2 (en) * | 1999-10-20 | 2004-07-28 | 三洋電機株式会社 | Active matrix display |
| US6384427B1 (en) * | 1999-10-29 | 2002-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| JP2001195016A (en) * | 1999-10-29 | 2001-07-19 | Semiconductor Energy Lab Co Ltd | Electronic equipment |
| JP2001147659A (en) * | 1999-11-18 | 2001-05-29 | Sony Corp | Display device |
| JP4727029B2 (en) * | 1999-11-29 | 2011-07-20 | 株式会社半導体エネルギー研究所 | EL display device, electric appliance, and semiconductor element substrate for EL display device |
| JP4748847B2 (en) * | 1999-12-15 | 2011-08-17 | 株式会社半導体エネルギー研究所 | EL display device and electric appliance |
| JP2001244213A (en) * | 1999-12-24 | 2001-09-07 | Semiconductor Energy Lab Co Ltd | Laser irradiation apparatus and method for manufacturing semiconductor device |
| US6307322B1 (en) * | 1999-12-28 | 2001-10-23 | Sarnoff Corporation | Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage |
| JP4485078B2 (en) * | 2000-01-26 | 2010-06-16 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP5008223B2 (en) * | 2000-01-31 | 2012-08-22 | 株式会社半導体エネルギー研究所 | Active matrix display device |
| JP3967081B2 (en) * | 2000-02-03 | 2007-08-29 | 株式会社半導体エネルギー研究所 | Light emitting device and manufacturing method thereof |
| JP2001318627A (en) * | 2000-02-29 | 2001-11-16 | Semiconductor Energy Lab Co Ltd | Light emitting device |
| JP2001272930A (en) * | 2000-03-28 | 2001-10-05 | Sanyo Electric Co Ltd | Electroluminescent display device |
| JP2001284592A (en) * | 2000-03-29 | 2001-10-12 | Sony Corp | Thin film semiconductor device and driving method thereof |
| WO2001073738A1 (en) * | 2000-03-30 | 2001-10-04 | Seiko Epson Corporation | Display |
| JP2001296818A (en) * | 2000-04-12 | 2001-10-26 | Sharp Corp | Organic electroluminescence display device |
| JP5030345B2 (en) * | 2000-09-29 | 2012-09-19 | 三洋電機株式会社 | Semiconductor device |
| JP4925528B2 (en) * | 2000-09-29 | 2012-04-25 | 三洋電機株式会社 | Display device |
| JP3612494B2 (en) * | 2001-03-28 | 2005-01-19 | 株式会社日立製作所 | Display device |
| JP4149168B2 (en) * | 2001-11-09 | 2008-09-10 | 株式会社半導体エネルギー研究所 | Light emitting device |
-
2002
- 2002-11-09 CN CN200710085012.9A patent/CN101009322B/en not_active Expired - Lifetime
-
2008
- 2008-03-28 JP JP2008087530A patent/JP5111196B2/en not_active Expired - Fee Related
-
2012
- 2012-05-02 JP JP2012105184A patent/JP2012195596A/en not_active Withdrawn
- 2012-10-23 JP JP2012233881A patent/JP5459918B2/en not_active Expired - Lifetime
-
2013
- 2013-11-20 JP JP2013239679A patent/JP5679535B2/en not_active Expired - Fee Related
- 2013-11-20 JP JP2013239680A patent/JP5568678B2/en not_active Expired - Lifetime
-
2014
- 2014-01-08 JP JP2014001793A patent/JP2014099635A/en not_active Withdrawn
- 2014-06-27 JP JP2014132514A patent/JP5917612B2/en not_active Expired - Lifetime
- 2014-11-14 JP JP2014231325A patent/JP5784209B2/en not_active Expired - Lifetime
-
2015
- 2015-05-05 JP JP2015094506A patent/JP6053067B2/en not_active Expired - Lifetime
- 2015-05-26 JP JP2015106208A patent/JP6096832B2/en not_active Expired - Lifetime
-
2016
- 2016-03-18 JP JP2016054981A patent/JP2016136641A/en not_active Withdrawn
-
2017
- 2017-09-01 JP JP2017168422A patent/JP6514286B2/en not_active Expired - Lifetime
-
2018
- 2018-02-02 JP JP2018017185A patent/JP6306808B1/en not_active Expired - Lifetime
- 2018-02-06 JP JP2018018864A patent/JP6383507B2/en not_active Expired - Lifetime
- 2018-07-17 JP JP2018134240A patent/JP6608008B2/en not_active Expired - Lifetime
- 2018-12-06 JP JP2018229341A patent/JP2019071431A/en not_active Withdrawn
- 2018-12-25 JP JP2018241382A patent/JP6622893B2/en not_active Expired - Lifetime
-
2020
- 2020-08-11 JP JP2020135660A patent/JP7032625B2/en not_active Expired - Lifetime
- 2020-09-10 JP JP2020151903A patent/JP2021013023A/en not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2018019084A5 (en) | ||
| JP2017116927A5 (en) | ||
| JP2017123337A5 (en) | ||
| JP2017085114A5 (en) | ||
| JP2016035585A5 (en) | ||
| JP2014130310A5 (en) | Light emitting device | |
| JP2013061667A5 (en) | ||
| JP2016036043A5 (en) | Semiconductor device and display device | |
| JP2012238028A5 (en) | Method of driving light emitting device | |
| JP2014006893A5 (en) | Semiconductor device | |
| JP2013242858A5 (en) | Power circuit | |
| JP2016126343A5 (en) | Semiconductor device | |
| JP2015138154A5 (en) | ||
| JP2018197868A5 (en) | ||
| JP2011172214A5 (en) | ||
| JP2015072485A5 (en) | Light emitting device or electronic device | |
| EP3593166A4 (en) | INTEGRATED LIDAR LIGHTING POWER CONTROL | |
| JP2017107632A5 (en) | Display device | |
| JP2013076994A5 (en) | ||
| JP2017076622A5 (en) | EL display device | |
| JP2014032977A5 (en) | ||
| JP2015034979A5 (en) | Display device | |
| JP2013231986A5 (en) | Display device | |
| JP2016195262A5 (en) | ||
| JP2015053477A5 (en) | Semiconductor device |