JP2018011044A - Electromagnetic shielding structure, dielectric substrate and unit cell - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a new structure according to the present disclosure.SOLUTION: An electromagnetic cut-off structure comprises a dielectric substrate having at least one conductive layer in the substrate. The at least one conductive layer has a plurality of first unit cells of a first kind and a plurality of second unit cells of the first kind. The plurality of first unit cells and the plurality of second unit cells are arranged in a grid pattern such that each of the plurality of first unit cells is oriented substantially at 90 degrees to each of the plurality of second unit cells.SELECTED DRAWING: Figure 1

Description

  The present disclosure relates generally to the field of electromagnetic interference shielding / shielding, and more particularly to electromagnetic (EM) shielding structures, dielectric substrates having EM shielding characteristics, and unit cell structures having EM shielding characteristics.

  In recent years, the IoT market has grown. Devices, such as home appliances, watches, cars, etc. that were not conventionally designed for network and / or Internet connection, are increasingly manufactured with network communication hardware, and these devices are connected to the Internet and / or other You can connect to different types of data networks. In addition, many of these devices are connected by wireless connection. Non-Patent Document 1 describes a system for blocking electromagnetic (EM) interference. Devices that use low power for signal transmission are more significantly affected by EM interference because EM interference is proportionally higher than devices that use high power for signal transmission. If the EM interference is reduced, the range of devices connected by the network is widened regardless of the power level for signal transmission, and the signal quality can be improved.

  Various EM blocking devices and substrates have been proposed for miniaturization. For example, attempts have been made to reduce the size of artificial magnetic conductors (AMC) having a regular pattern of patch type unit cells. In these devices, each of the patch type unit cells has a size equal to the resonator wavelength λ. Non-Patent Document 1 includes a film having a pattern of a loop structure and a loop slot structure. The size of the unit cell in Non-Patent Document 1 is λ / 4. Where λ is the wavelength of the signal.

  When a plane wave enters the metal conductor, this wave is reflected and the phase of the reflected wave is shifted by 180 degrees. This is commonly called an electrical wall. When this metal conductor is in the vicinity of the antenna, the electromagnetic wave radiated from the antenna and the electromagnetic wave reflected by the metal conductor effectively block the signal from the antenna by destructive interference. In order to avoid this phenomenon, the distance between the antenna and the metal conductor is set to λ / 4 in some cases. However, increasing the distance in this manner increases the thickness of the antenna substrate. In addition to the above phenomenon, when a plane wave is incident on the magnetic material, the reflection phase shift can be 0 degrees instead of 180 degrees.

  Non-Patent Document 2 describes a metamaterial that can block EM interference by controlling the phase shift of a reflected plane wave from -90 degrees to 90 degrees. In this case, even if the antenna elements on the substrate are brought relatively close to each other, the device maintains the EM cutoff characteristics within a specific frequency band.

Murakami et al., “Low Profile Design and Bandwidth Characteristics of Artificial Magnetic Conductor Using Dielectric Substrate”, Science Theory (B), Vol. J98-B No. 2, pp. 172-179 Hayashi et al., “Reflection characteristics analysis using equivalent circuit in FSR loaded with metal plate and application to AMC substrate”, Science (B), Vol. J96-B No. 9, pp. 1010-1018

  The present disclosure aims to provide a new structure.

  The electromagnetic shielding structure of the present disclosure includes a dielectric substrate and at least one conductor layer. At least one conductor layer is in the dielectric substrate. The at least one conductor layer includes a plurality of first unit cells and a plurality of second unit cells. The first unit cell is a first type having no four-fold symmetry. The second unit cell is the first type. The plurality of first unit cells and the plurality of second unit cells are arranged in a grid pattern. Each first unit cell in the plurality of first unit cells is oriented to form 90 degrees with respect to each second unit cell in the plurality of second unit cells.

  The dielectric substrate of the present disclosure includes at least one ground conductor layer and at least one conductor layer. The at least one conductor layer includes a plurality of first unit cells and a plurality of second unit cells. The plurality of first unit cells are the first type having no 4-fold symmetry. The plurality of second unit cells are of the first type. The plurality of first unit cells and the plurality of second unit cells are arranged in a grid pattern. Each first unit cell in the plurality of first unit cells is oriented at 90 degrees with respect to each second unit cell in the plurality of second unit cells.

  The unit cell of the present disclosure includes conductive traces of dielectric material. The conductive trace includes a first spiral, a second spiral, and a connecting arm. The first spiral is bent in the first direction. The first spiral has at least one turn. The second spiral is bent in the first direction. The second spiral has at least one turn. The connecting arm portion connects the first spiral to the second spiral.

  According to the electromagnetic shielding structure, the dielectric substrate, and the unit cell in the present disclosure, the influence of the reflected wave by the metal conductor is small.

FIG. 1 is a perspective view of an example of an electromagnetic shielding structure according to some embodiments. FIG. 2 is a plan view of an example of a unit cell having a meander line structure according to some embodiments. FIG. 3 is a cross-sectional view taken along line A-A ′ of an example of the electromagnetic shielding structure of FIG. 2 according to some embodiments. FIG. 4 is a plan view of an example of a unit cell having a meander line structure according to some embodiments. FIG. 5 is a plan view of an example of a unit cell having a point-symmetric double spiral structure according to some embodiments. FIG. 6 is a plan view of an example of a unit cell having a line-symmetric double spiral structure according to some embodiments. FIG. 7 is a perspective view of an example of an electromagnetic shielding structure according to some embodiments. FIG. 8 is a perspective view of an example of an electromagnetic shielding structure according to some embodiments. FIG. 9 is a plan view of an example of a unit cell having a patch structure according to some embodiments. FIG. 10 is a plan view of an example of a unit cell having a loop structure according to some embodiments. FIG. 11 is a plan view of an example of a unit cell having a loop slot structure according to some embodiments. FIG. 12A is a perspective view of an example of an electromagnetic shielding structure according to some embodiments. FIG. 12B is a plan view of the conductor layer of FIG. 12A according to some embodiments. FIG. 13 is a perspective view of an example of an electromagnetic shielding structure according to some embodiments. FIG. 14 is a perspective view of an example of an electromagnetic shielding structure according to some embodiments. FIG. 15 is a perspective view of an example of an electromagnetic shielding structure according to some embodiments. Fig.16 (a) is a top view of an example of the electromagnetic shielding structure provided with the antenna electromagnetic shielding structure which concerns on some embodiment. FIG. 16B is a cross-sectional view taken along line B-B ′ of an example of the electromagnetic shielding structure of FIG. 16A according to some embodiments. FIG. 17 is a plan view of an example of an electromagnetic shielding structure according to some embodiments. FIG. 18A is a plan view of an example of an electromagnetic shielding structure according to some embodiments. FIG. 18B is a plan view of an example of the electromagnetic shielding structure according to some embodiments. FIG. 19A is a plan view of an example of an electromagnetic shielding structure according to some embodiments. FIG. 19B is a plan view of an example of an electromagnetic shielding structure according to some embodiments. FIG. 20A is an example of the electromagnetic shielding structure of FIG. 1 in which the first conductor layer and the second conductor layer are each a uniform layer of a plurality of meander line unit cells according to some embodiments. Is a graph of reflection intensity with respect to frequency. FIG. 20B is an example of the electromagnetic shielding structure of FIG. 1 in which the first conductor layer and the second conductor layer are each a uniform layer of a plurality of meander line unit cells according to some embodiments. It is a graph of the reflection phase with respect to the frequency regarding. FIG. 21 (a) shows the first conductor layer and the second conductor layer according to some embodiments, each of which is a uniform layer of a plurality of point-symmetric double spiral structure unit cells. It is a graph of the reflection intensity with respect to the frequency regarding an example of an electromagnetic shielding structure. FIG. 21 (b) shows that, according to some embodiments, the first conductor layer and the second conductor layer are each a uniform layer of a plurality of point-symmetric double spiral structure unit cells. It is a graph of the reflection phase with respect to the frequency regarding an example of an electromagnetic shielding structure. FIG. 22 (a) is an example of the electromagnetic shielding structure of FIG. 8 in which the first conductor layer and the second conductor layer are each a uniform layer of a plurality of meander line unit cells according to some embodiments. Is a graph of reflection intensity with respect to frequency. FIG. 22B is an example of the electromagnetic shielding structure of FIG. 8 in which the first conductor layer and the second conductor layer are each a uniform layer of a plurality of meander line unit cells according to some embodiments. It is a graph of the reflection phase with respect to the frequency regarding. FIG. 23 (a) shows the electromagnetic wave of FIG. 8, wherein the first conductor layer and the second conductor layer are each a uniform layer of a plurality of point-symmetric double spiral unit cells, according to some embodiments. It is a graph of the reflection intensity with respect to the frequency regarding an example of interruption | blocking structure. FIG. 23 (b) illustrates the electromagnetic wave of FIG. 8, wherein the first conductor layer and the second conductor layer are each a uniform layer of a plurality of point-symmetric double spiral unit cells, according to some embodiments. It is a graph of the reflection phase with respect to the frequency regarding an example of interruption | blocking structure. FIG. 24 (a) shows the electromagnetic wave of FIG. 8 in which the first conductor layer and the second conductor layer are each a uniform layer of a plurality of line-symmetric double spiral unit cells, according to some embodiments. It is a graph of the reflection intensity with respect to the frequency regarding an example of interruption | blocking structure. FIG. 24 (b) shows the electromagnetic wave of FIG. 8 in which the first conductor layer and the second conductor layer are each a uniform layer of a plurality of line-symmetric double spiral unit cells, according to some embodiments. It is a graph of the reflection phase with respect to the frequency regarding an example of the interruption | blocking structure. FIG. 25 (a) shows a first embodiment in which the first conductor layer and the second conductor layer are each a uniform layer of a plurality of meander line unit cells and the patch layer is a loop structure unit cell according to some embodiments. FIG. 9 is a graph of reflection intensity versus frequency for an example of the electromagnetic blocking structure of FIG. FIG. 25 (b) shows a case where the first conductor layer and the second conductor layer are each a uniform layer of a plurality of meander line unit cells and the patch layer is a loop structure unit cell according to some embodiments. FIG. 9 is a graph of reflection phase versus frequency for one example of the electromagnetic blocking structure of FIG. FIG. 26 (a) shows a first embodiment in which the first conductor layer and the second conductor layer are each a uniform layer of a plurality of meander line unit cells and the patch layer is a loop slot unit cell according to some embodiments. FIG. 9 is a graph of reflection intensity versus frequency for an example of the electromagnetic blocking structure of FIG. FIG. 26 (b) shows that according to some embodiments, the first conductor layer and the second conductor layer are each a uniform layer of a plurality of meander line unit cells, and the patch layer is a loop slot unit cell. FIG. 9 is a graph of reflection phase versus frequency for one example of the electromagnetic blocking structure of FIG. FIG. 27 (a) is a graph of reflection intensity versus frequency for one example of the electromagnetic blocking structure of FIG. 7, wherein the conductor layer is a uniform layer of a plurality of meander line unit cells, according to some embodiments. FIG. 27 (b) is a graph of reflection phase versus frequency for the example electromagnetic blocking structure of FIG. 7, wherein the conductor layer is a uniform layer of a plurality of meander line unit cells, according to some embodiments. FIG. 28 (a) shows the reflection intensity versus frequency for an example of the electromagnetic blocking structure of FIG. 7, where the conductor layer is a uniform layer of a plurality of point-symmetric double spiral unit cells, according to some embodiments. It is a graph. FIG. 28 (b) shows the reflection phase versus frequency for an example of the electromagnetic blocking structure of FIG. 7, where the conductor layer is a uniform layer of a plurality of point-symmetric double spiral unit cells, according to some embodiments. It is a graph. FIG. 29 (a) shows the reflection intensity versus frequency for an example of the electromagnetic blocking structure of FIG. 7 in which the conductor layer is a uniform layer of a plurality of line-symmetric double spiral unit cells, according to some embodiments. It is a graph. FIG. 29 (b) shows the reflection phase versus frequency for an example of the electromagnetic blocking structure of FIG. 7, where the conductor layer is a uniform layer of a plurality of line-symmetrical double spiral unit cells, according to some embodiments. It is a graph. FIG. 30 (a) is a graph of reflection intensity versus frequency for one example of the electromagnetic blocking structure of FIG. 17, wherein the conductor layer is a uniform layer of a plurality of meander line unit cells, according to some embodiments. FIG. 30 (b) is a graph of reflection phase versus frequency for one example of the electromagnetic blocking structure of FIG. 17, where the conductor layer is a uniform layer of a plurality of meander line unit cells, according to some embodiments. FIG. 31 (a) is a graph of reflection intensity versus frequency for one example of the electromagnetic blocking structure of FIG. 7, where the conductor layer is a uniform layer of 3 × 3 meander line unit cells, according to some embodiments. is there. FIG. 31 (b) is a graph of reflection phase versus frequency for an example of the electromagnetic blocking structure of FIG. 7, where the conductor layer is a uniform layer of 3 × 3 meander line unit cells, according to some embodiments. is there. FIG. 32 (a) is a graph of reflection intensity versus frequency for one example of the electromagnetic cutoff structure of FIG. 13 according to some embodiments. FIG. 32 (b) is a graph of reflection phase versus frequency for one example of the electromagnetic cutoff structure of FIG. 13 according to some embodiments. FIG. 33 (a) is a graph of reflection intensity versus frequency for one example of the electromagnetic cutoff structure of FIG. 14 according to some embodiments. FIG. 33 (b) is a graph of reflection phase versus frequency for one example of the electromagnetic cutoff structure of FIG. 14 according to some embodiments. FIG. 34 (a) is a graph of reflection intensity versus frequency for an example of the electromagnetic blocking structure of FIG. 12 (a) according to some embodiments. FIG. 34 (b) is a graph of reflection phase versus frequency for an example of the electromagnetic blocking structure of FIG. 12 (a) according to some embodiments. FIG. 35 (a) shows that according to some embodiments, the first conductor layer is a uniform layer of a plurality of point-symmetric double spiral unit cells, and the second conductor layer is a plurality of patch unit cells. It is a graph of the reflection intensity with respect to the frequency regarding an example of the electromagnetic shielding structure of Fig.12 (a) which is a uniform layer. FIG. 35 (b) shows that according to some embodiments, the first conductor layer is a uniform layer of a plurality of point-symmetric double spiral unit cells, and the second conductor layer is a plurality of patch unit cells. It is a graph of the reflection phase with respect to the frequency regarding an example of the electromagnetic interruption | blocking structure of Fig.12 (a) which is a uniform layer. FIG. 36 (a) shows that according to some embodiments, the first conductor layer is a uniform layer of a plurality of line symmetrical double spiral unit cells, and the second conductor layer is a plurality of patch unit cells. It is a graph of the reflection intensity with respect to the frequency regarding an example of the electromagnetic interruption | blocking structure of Fig.12 (a) which is a uniform layer. FIG. 36 (b) shows that according to some embodiments, the first conductor layer is a uniform layer of a plurality of line symmetrical double spiral unit cells, and the second conductor layer is a plurality of patch unit cells. It is a graph of the reflection phase with respect to the frequency regarding an example of the electromagnetic interruption | blocking structure of Fig.12 (a) which is a uniform layer. FIG. 37 (a) shows a first conductor layer is a uniform layer of a plurality of meander line unit cells and a second conductor layer is a uniform layer of a plurality of loop unit cells according to some embodiments. It is a graph of the reflection intensity with respect to the frequency regarding an example of the electromagnetic shielding structure of Fig.12 (a). FIG. 37 (b) shows that the first conductor layer is a uniform layer of a plurality of meander line unit cells and the second conductor layer is a uniform layer of a plurality of loop unit cells according to some embodiments. It is a graph of the reflection phase with respect to the frequency regarding an example of the electromagnetic shielding structure of Fig.12 (a). FIG. 38 (a) shows that, according to some embodiments, the first conductor layer and the second conductor layer are each uniform layers of a plurality of meander line unit cells, and the first conductor layer is shown in FIG. It is a graph of the reflection intensity with respect to the frequency regarding an example of the electromagnetic shielding structure of FIG. 1 which has the pattern shown to a) and a 2nd conductor layer has the pattern shown in FIG.18 (b). FIG. 38 (b) shows that, according to some embodiments, the first conductor layer and the second conductor layer are each uniform layers of a plurality of meander line unit cells, and the first conductor layer is shown in FIG. It is a graph of the reflection phase with respect to the frequency regarding an example of the electromagnetic shielding structure of FIG. 1 which has the pattern shown to a), and a 2nd conductor layer has the pattern shown in FIG.18 (b). FIG. 39 illustrates that according to some embodiments, the first conductor layer is a uniform layer of a plurality of meander line unit cells and the second conductor layer is a uniform layer of a plurality of loop unit cells. 13 is a graph of a center frequency and an isotropic frequency band with respect to a shift expressed as a percentage of the width of one unit cell in the example of the electromagnetic cutoff structure of FIG. FIG. 40 (a) shows the electromagnetic wave of FIG. 8 in which the first conductor layer and the second conductor layer are each a uniform layer of a plurality of point-symmetric double spiral unit cells, according to some embodiments. It is a graph of the reflection intensity with respect to the frequency regarding an example of the interruption | blocking structure. FIG. 40 (b) illustrates the electromagnetic wave of FIG. 8, wherein the first conductor layer and the second conductor layer are each a uniform layer of a plurality of point-symmetric double spiral unit cells, according to some embodiments. It is a graph of the reflection phase with respect to the frequency regarding an example of interruption | blocking structure. FIG. 41 (a) shows that according to some embodiments, the first conductor layer and the second conductor layer are each a uniform layer of a plurality of meander line unit cells, and the first conductor layer is FIG. 19. It is a graph of the reflection intensity with respect to the frequency regarding an example of the electromagnetic shielding structure of FIG. 8, which has the unit cell pattern shown in (b) and the second conductor layer has the unit cell pattern shown in FIG. 19 (a). FIG. 41 (b) shows that, according to some embodiments, the first conductor layer and the second conductor layer are each a uniform layer of a plurality of meander line unit cells, and the first conductor layer is shown in FIG. It is a graph of the reflection phase with respect to the frequency regarding an example of the electromagnetic shielding structure of FIG. 8, which has the unit cell pattern shown in (b) and the second conductor layer has the unit cell pattern shown in FIG. 19 (a). FIG. 42 (a) is a graph of reflection intensity versus frequency for one example of the electromagnetic blocking structure of FIG. 15 according to some embodiments. FIG. 42 (b) is a graph of reflection phase versus frequency for one example of the electromagnetic cutoff structure of FIG. 15 according to some embodiments.

  Hereinafter, an electromagnetic shielding structure, a dielectric substrate, and a unit cell according to some embodiments of the present application will be described with reference to the drawings. In the following description, the upper surface and the lower surface are distinguished from each other like the upper surface, but this is for convenience and does not limit the upper and lower sides when the substrate or the like is actually used.

  The present disclosure may be understood by the following detailed description with reference to the accompanying drawings. Unless otherwise noted, various structures are not drawn to scale and are used for illustrative purposes only. In addition, the dimensions of the various structures may be expanded or reduced for clarity of explanation.

  Embodiments of the present disclosure have been developed to allow miniaturization of electromagnetic (EM) blocking structures while reducing or eliminating anisotropy.

  FIG. 1 is a perspective view of an EM blocking structure 100 according to some embodiments. The EM blocking structure 100 includes a ground layer 110. The first conductor layer 120 covers the top surface of the ground layer 110. A second conductor layer 130 is between the first conductor layer 120 and the ground layer 110. The first conductor layer 120 includes a plurality of unit cells 125 having no 4-fold symmetry. The plurality of unit cells 125 are two-dimensionally arranged such that the distance from the ground layer 110 is the same as all other unit cells 125. Each unit cell 125 has the same shape and orientation as all the other unit cells 125. The second conductor layer 130 includes a plurality of unit cells 135 having no 4-fold symmetry. The plurality of unit cells 135 are two-dimensionally arranged such that the distance from the ground layer 110 is the same as all other unit cells 135. Each unit cell 135 has the same shape and orientation as all other unit cells 135. The orientation of the plurality of unit cells 135 is rotated by 90 degrees with respect to the direction perpendicular to the top surface of the ground layer 110 with respect to the orientation of the plurality of unit cells 125. The dielectric material fills the space between the ground layer 110, the first conductor layer 120, and the second conductor layer 130. In some embodiments, the dielectric material is a single layer material having a substantially uniform composition. In some embodiments, the dielectric material is a multilayer material that includes at least two different compositions. The rotational symmetry of the unit cell is not limited to four-fold symmetry. The rotational symmetry of the unit cell can be changed according to the lattice shape in which the unit cells are arranged. When the unit cell is a rectangular lattice, it does not have two-fold symmetry. When the unit cell is a hexagonal lattice, it has no 6-fold symmetry.

  The ground layer 110 is a conductive material and shields the first conductor layer 120 and the second conductor layer 130. The ground layer 110 is a continuous plate having an outer periphery extending to at least the outer edge of the second conductor layer 130. The ground layer 110 is electrically connected to the ground voltage. In some embodiments, the ground layer 110 is copper, aluminum, tungsten, or other suitable conductive material. The thickness of the ground layer 110 ranges from about 1 μm to about 1 mm. If the thickness of the ground layer 110 is too small, the ground layer 110 may not sufficiently shield the first conductor layer 120 and the second conductor layer 130. If the thickness of the ground layer 110 is too large, the size of the EM blocking structure 100 increases, which may result in wasted material and increased production costs without significantly improving function.

  The first conductor layer 120 is configured to block a predetermined band of EM waves. The first conductor layer 120 includes a plurality of unit cells 125 arranged in a single layer. Each unit cell 125 is separated by a first distance from a plurality of adjacent unit cells 125. The wavelength of the EM wave reflected by the first conductor layer 120 is determined by the shape, material, and interval of the plurality of unit cells 125. In some embodiments, the plurality of unit cells 125 is a square array, a rectangular array, or other suitable array distribution. In some embodiments, the plurality of unit cells 125 are not arranged in at least one arrangement position in the first conductor layer 120. In some embodiments, this at least one array location in the first conductor layer 120 has a patch cell disposed or is a void. In some embodiments, the area of the first conductor layer 120 is smaller than the area of the ground layer 110. In some embodiments, the area of the first conductor layer 120 is equal to the area of the ground layer 110. In some embodiments, the outer edge of the first conductor layer 120 is recessed in a direction parallel to the top surface of the ground layer 110 by a distance from the outer periphery of the ground layer 110 to half the width of the one unit cell 125. Yes.

  The thickness of the first conductor layer 120 ranges from about 1 μm to about 1 mm. If the thickness of the first conductor layer 120 is too small, the first conductor layer 120 may not provide sufficient EM blocking characteristics. If the thickness of the conductor layer 120 is too large, the size of the EM blocking structure 100 increases, which may result in waste of material and increase in production cost without greatly improving the function.

  Each unit cell 125 has a conductive trace (referred to herein as a shape) that extends across the unit cell 125. In some embodiments, each unit cell 125 has a shape selected from a meander line shape, a line-symmetrical double spiral shape, a point-symmetrical double spiral shape, an accordion shape, or other suitable shape. . In some embodiments, the material in the form of the plurality of unit cells 125 is copper, aluminum, tungsten, or other suitable conductive material. In some embodiments, the material in the shape of the plurality of unit cells 125 is the same material as the ground layer 110. In some embodiments, the material in the shape of the plurality of unit cells 125 is different from the material of the ground layer 110.

  The second conductor layer 130 is configured to block a predetermined band of the EM wave. The second conductor layer includes a plurality of unit cells 135 arranged in a single layer. Each unit cell 135 is separated from the adjacent unit cells 135 by a second distance. In some embodiments, the first distance is equal to the second distance. The wavelength of the EM wave reflected by the second conductor layer 130 is determined by the shape, material, and interval of the plurality of unit cells 135. In some embodiments, the plurality of unit cells 135 is a square array, a rectangular array, or other suitable array distribution. In some embodiments, the area of the second conductor layer 130 is smaller than the area of the ground layer 110. In some embodiments, the area of the second conductor layer 130 is equal to the area of the ground layer 110. In some embodiments, the outer edge of the second conductor layer 130 is recessed by a distance from the outer periphery of the ground layer 110 to half the width of one unit cell 135 in a direction parallel to the top surface of the ground layer 110 (or Protruding).

  The thickness of the second conductor layer 130 ranges from about 1 μm to about 1 mm. If the thickness of the second conductor layer 130 is too small, sufficient EM shielding characteristics may not be provided. If the thickness of the conductor 130 is too large, the size of the EM blocking structure 100 increases, which may result in wasted material and increased production costs without significantly improving function.

  Each unit cell 135 has a conductive trace (referred to herein as a shape) that extends across the unit cell 135. In some embodiments, each unit cell 135 has a shape selected from a meander line shape, a line symmetrical double spiral shape, a point symmetrical double spiral shape, an accordion shape, or other suitable shape. . In some embodiments, each unit cell 135 has the same shape as each unit cell 125. In some embodiments, at least one unit cell 135 has a different shape than at least one unit cell 125. In some embodiments, the material in the form of the plurality of unit cells 135 is copper, aluminum, tungsten, or other suitable conductive material. In some embodiments, the material in the shape of the plurality of unit cells 135 is the same as the material of both the ground layer 110 and the first conductor layer 120. In some embodiments, the material in the shape of the plurality of unit cells 135 is different from the material of either the ground layer 110 or the first conductor layer 120.

  FIG. 2 is a plan view of the electromagnetic shielding structure 100. The ground layer 110 is not visible in FIG. A part of the first conductor layer 120 is notched so that the shift of the plurality of unit cells 125 with respect to the plurality of unit cells 135 can be seen more clearly. The plurality of unit cells 125 do not completely overlap with the corresponding plurality of unit cells 135. Rather, the plurality of unit cells 125 are offset from the plurality of unit cells 135. In some embodiments, the distance of displacement of the plurality of unit cells 125 relative to the plurality of unit cells 135 is from zero to indicate that the plurality of unit cells 125 and the plurality of unit cells 135 are completely overlapped. The range is up to half the width of the unit cell 125. If the amount of deviation is out of a certain range, the EM cutoff characteristic is reduced.

  FIG. 3 is a cross-sectional view of the EM blocking structure 100 according to some embodiments at the position of the section line A-A ′ of FIG. 2. The EM blocking structure 100 optionally includes a third conductor layer 140 between the first conductor layer 120 and the second conductor layer 130. Dielectric material 50 fills the space between ground layer 110, first conductor layer 120, second conductor layer 130, and third conductor layer 140. The distance between the ground layer 110 and the first conductor layer 120 is “h”. The distance between the top surface of the electromagnetic shielding structure 100 and the first conductor layer 120 is “d”. The distance between the first conductor layer 120 and the third conductor layer 140 is “e”. The distance between the second conductor layer 130 and the third conductor layer 140 is “f”. In some embodiments, distance d is equal to both distance e and distance f. In some embodiments, the distance d is different from at least one of the distance e or the distance f. Specific measurement dimensions are, for example, h = 1.68 mm, d = 0.3 mm, and e = f = 0.08 mm.

  FIG. 4 is a top view of a unit cell 400 having a meander line structure 410 according to some embodiments. The meander line structure 410 includes substantially parallel legs 415 and connecting arms 420 and 430, each leg being adjacent by at least one connecting arm provided at the end of the leg. Connected to the legs. In some embodiments, these legs are parallel to each other. In some embodiments, at least one leg is inclined with respect to another leg. In some embodiments, these connecting arms are parallel to each other. In some embodiments, at least one connecting arm is inclined with respect to another connecting arm. In some embodiments, the interior angle “Θ” between a leg and a connecting arm is substantially 90 degrees. In some embodiments, this interior angle is greater than 90 degrees. In some embodiments, this interior angle is less than 90 degrees. In some embodiments, unit cell 400 is square, rectangular, hexagonal, or other suitable shape. The distance “m1” is the length of the first side of the meander line structure 410 measured between the outermost legs of the meander line structure 410. The distance “m2” is the length of the second side of the meander line structure 410, measured as the length of the outermost leg of the meander line structure 410. In some embodiments, m1 and m2 are the same. In some embodiments, m1 and m2 are different. The distance “g1” is the distance between two adjacent legs. The distance “w” is the width of at least one leg of the meander line structure 410. In some embodiments, g1 and w are the same. In some embodiments, g1 and w are different. A broken line surrounding the outside of the meander line structure 410 defines the circumference of the unit cell. The distance “k1” is the circumference of the first side of the unit cell 400, and the variable “k2” is the circumference of the second side of the unit cell 400. In some embodiments, k1 and k2 are the same. In some embodiments, k1 and k2 are different. The distance “g2” is the distance between the circumference on the first side of the unit cell 400 and the end of the outermost leg on the first side of the meander line structure 410. The distance “g3” extends between the circumference on the second side of the unit cell 400 and the outermost leg on the second side of the meander line structure 410. In some embodiments, g2 and g3 are the same. In some embodiments, g2 and g3 are different. Specific measurement dimensions are, for example, k1 = k2 = 2.8 mm, m1 = m2 = 2.6 mm, w = 0.2 mm, g1 = 0.2 mm, and g2 = g3 = 0.1 mm.

  FIG. 5 is a top view of a unit cell 500 having a point-symmetric double spiral structure according to some embodiments. The point-symmetric double spiral structure includes a first spiral 510 and a second spiral 520 connected to the first spiral by a connecting arm 530. The first spiral 510 and the second spiral 520 are connected to the connecting arm 530 from different directions. In some embodiments, the spirals each pivot once. In some embodiments, each spiral is swirled four times or more, or less than once. In some embodiments, the number of turns in each spiral is the same. In some embodiments, the number of turns in each spiral is different. In some embodiments, the interior angle “Θ” of at least one turn is substantially 90 degrees, and in other embodiments is greater than 90 degrees. The interior angle of the at least one turn is less than 90 degrees in some embodiments. In some embodiments, the unit cell 500 is square, rectangular, hexagonal, or other suitable shape. Dimensions k 1, k 2, m 1, m 2, g 1, g 2, and g 3 represent measurement dimension attributes of unit cell 500 that are substantially the same as those of unit cell 400. Specific measurement dimensions are, for example, k1 = k2 = 2.8 mm, m1 = m2 = 2.6 mm, w = 0.2 mm, g1 = 0.2 mm, g2 = g3 = 0.1 mm.

  FIG. 6 is a top view of a unit cell 600 having a line-symmetric double spiral structure according to some embodiments. The line-symmetric double spiral structure includes a first spiral 610 and a second spiral 620 connected to the first spiral 610 by a connecting arm 630. The first spiral 610 and the second spiral 620 are connected to the connecting arm 630 from the same direction. In some embodiments, each of the spirals is swiveled once. In some embodiments, each spiral is swirled four times or more, or less than once. In some embodiments, the number of turns in each spiral is the same. In some embodiments, the number of turns in each spiral is different. In some embodiments, the interior angle “Θ” of at least one turn is substantially 90 degrees, and in other embodiments is greater than 90 degrees. The interior angle of the at least one turn is less than 90 degrees in some embodiments. In some embodiments, unit cell 600 is square, rectangular, or other suitable shape. Dimensions k 1, k 2, m 1, m 2, g 1, g 2, and g 3 represent measurement dimension attributes of unit cell 600 that are substantially the same as those of unit cell 400. The distance between the two legs of the first spiral 610 is g4 and the distance between the two legs of the second spiral 620 is g5. In some embodiments, g4 and g5 are the same, and in other embodiments, g4 and g5 are different. Specific measurement dimensions are, for example, k1 = k2 = 2.8 mm, m1 = m2 = 2.6 mm, w = 0.2 mm, g1 = 0.2 mm, g2 = g3 = 0.1 mm, and g4 = g5 = 0.4 mm.

  FIG. 7 is a perspective view of an EM blocking structure 700 according to some embodiments. The electromagnetic shielding structure 700 includes a ground layer 110. The conductor layer 720 covers the top surface of the ground layer 110. The conductor layer 720 includes a plurality of unit cells 725 and a plurality of unit cells 730 arranged alternately. The plurality of unit cells 725 and the plurality of unit cells 730 are two-dimensionally arranged such that the distance from the ground layer 110 is the same as all the other unit cells 725 and unit cells 730. Each unit cell 725 has the same shape and orientation as all other unit cells 725. Each unit cell 730 has the same shape and orientation as all other unit cells 730. At least one unit cell 730 is oriented substantially 90 degrees clockwise or counterclockwise with respect to adjacent unit cells 725. A dielectric material fills the space between the ground layer 110 and the conductor layer 720. In some embodiments, the dielectric material is a single layer material having a substantially uniform composition. In some embodiments, the dielectric material is a multilayer material that includes at least two different compositions.

  The conductor layer 720 is configured to block a predetermined band of the EM wave. The first conductor layer 720 includes a plurality of unit cells 725 and a plurality of unit cells 730 arranged in a single layer. Each unit cell 725 is separated by a first distance from a plurality of adjacent unit cells 730 or a plurality of adjacent unit cells 725. The wavelengths of the EM waves reflected by the conductor layer 720 are determined by the shapes, materials, and intervals of the plurality of unit cells 725 and the plurality of unit cells 730. In some embodiments, the plurality of unit cells 725 and the plurality of unit cells 730 are a square array, a rectangular array, or other suitable array distribution. In some embodiments, the plurality of unit cells 725 and the plurality of unit cells 730 are not arranged in at least one arrangement position in the conductor layer 720. In some embodiments, this at least one array location in the conductor layer 720 has a patch cell disposed or is an air gap. In some embodiments, the area of the first conductor layer 720 is smaller than the area of the ground layer 110. In some embodiments, the area of the first conductor layer 720 is equal to the area of the ground layer 110. In some embodiments, the outer edge of the first conductor layer 720 is a distance from the outer periphery of the ground layer 110 to the half width of one unit cell 725 or one unit cell 730 in a direction parallel to the top surface of the ground layer 110. It has been depressed.

  The thickness of the first conductor layer 720 ranges from about 1 μm to about 1 mm. If the thickness of the first conductor layer 720 is too small, the first conductor layer 720 may not provide sufficient electromagnetic shielding characteristics. If the thickness of the conductor layer 720 is too large, the size of the EM blocking structure 700 increases, which may increase material waste and production cost without greatly improving the function.

  Each unit cell 725 has a conductive trace (referred to herein as a shape) that extends across the unit cell 725. In some embodiments, each unit cell 725 has a shape selected from a meander line shape, a line-symmetric double spiral shape, a point-symmetric double spiral shape, an accordion shape, or other suitable shape. . In some embodiments, the material in the shape of the plurality of unit cells 725 is copper, aluminum, tungsten, or other suitable conductive material. In some embodiments, the material in the shape of the plurality of unit cells 725 is the same material as the ground layer 110. In some embodiments, the material in the shape of the plurality of unit cells 725 is different from the material of the ground layer 110.

  Each unit cell 730 has a conductive trace (referred to herein as a shape) that extends across the unit cell 730. In some embodiments, each unit cell 730 has a shape selected from a meander line shape, a line-symmetric double spiral shape, a point-symmetric double spiral shape, an accordion shape, or other suitable shape. . In some embodiments, the material in the form of the plurality of unit cells 730 may be copper, aluminum, tungsten, or other suitable conductive material. In some embodiments, the material in the shape of the plurality of unit cells 730 is the same material as the ground layer 110. In some embodiments, the material in the shape of the plurality of unit cells 730 is different from the material of the ground layer 110.

  FIG. 8 is a perspective view of an EM blocking structure 800 according to some embodiments. Compared to the EM blocking structure 100, the EM blocking structure 800 includes a patch layer 840 between the first conductor layer 120 and the second conductor layer 130.

  The patch layer 840 is configured to block a predetermined band of electromagnetic (EM) waves. The patch layer 840 includes a plurality of unit cells 845 arranged in a single layer. Each unit cell 845 is separated by a first distance from a plurality of adjacent unit cells 845. The shape, material, and interval of the plurality of unit cells 845 determine the wavelength of the EM wave reflected by the patch layer 840. In some embodiments, the plurality of unit cells 845 is a square array, a rectangular array, or other suitable array distribution. In some embodiments, the plurality of unit cells 845 are not disposed in at least one arrangement position in the patch layer 840. In some embodiments, this at least one array location in the patch layer 840 has a patch cell disposed or is a void. In some embodiments, the area of the patch layer 840 is smaller than the area of the ground layer 110. In some embodiments, the area of the patch layer 840 is equal to the area of the ground layer 110. In some embodiments, the outer edge of the patch layer 840 is recessed by a distance from the outer periphery of the ground layer 110 to half the width of the 1 unit cell 845 in a direction parallel to the top surface of the ground layer 110.

  The thickness of the patch layer 840 ranges from about 1 μm to about 1 mm. If the thickness of the patch layer 840 is too small, the patch layer 840 may not provide sufficient electromagnetic shielding properties. If the thickness of the patch layer 840 is too large, the size of the EM blocking structure 800 increases, which may result in wasted material and increased production costs without greatly improving function.

  Each unit cell 845 has a conductive trace (referred to herein as a shape) that extends across the unit cell 845. In some embodiments, each unit cell 845 has a shape selected from a patch shape, loop shape, loop slot shape, or other suitable shape. In some embodiments, the material in the form of the plurality of unit cells 845 is copper, aluminum, tungsten, or other suitable conductive material. In some embodiments, the material in the shape of the plurality of unit cells 845 is the same material as the ground layer 110, the first conductor layer 120, and the second conductor layer 130. In some embodiments, the material in the shape of the plurality of unit cells 845 is different from at least one material of the ground layer 110, the first conductor layer 120, and the second conductor layer 130.

  FIG. 9 is a unit cell 900 having a patch structure 910 according to some embodiments. In some embodiments, the patch structure includes a substantially square patch of conductive material.

  In some embodiments, unit cell 900 is square, rectangular, hexagonal, or other suitable shape. The distance “m1” is the length of the first side of the patch structure 910. Dimensions k1, k2, m1, m2, g1, and g2 represent measurement dimension attributes of unit cell 900 that are substantially the same as those of unit cell 400. Specific measurement dimensions are, for example, k1 = k2 = 2.8 mm, m1 = m2 = 2.6 mm, and g1 = g2 = 0.1 mm.

  FIG. 10 is a unit cell 1000 having a loop structure 1010 according to some embodiments. This loop structure includes a trace of conductive material that follows the circumference of the unit cell 1000. Dimensions k1, k2, m1, m2, g1, and g2 represent measurement dimension attributes of unit cell 1000 that are substantially the same as those of unit cell 400. Specific measurement dimensions are, for example, k1 = k2 = 2.8 mm, m1 = m2 = 2.6 mm, w = 0.2 mm, and g1 = g2 = 0.1 mm.

  In some embodiments, the unit cell 1000 is square, rectangular, hexagonal, or other suitable shape. The distance “n1” extends across the gap from the inner edge of the loop on the first side of the loop structure 1010 to the inner edge of the loop on the second side of the loop structure 1010. The distance “n2” extends vertically in the direction perpendicular to the distance n1 from the inner edge of the loop on the third side of the loop structure 1010 to the inner edge of the loop on the fourth side of the loop structure 1010. In some embodiments, n1 and n2 are the same. In some embodiments, n1 and n2 are different.

  FIG. 11 is a unit cell 1100 having a loop slot structure 1110 according to some embodiments. In some embodiments, the loop slot structure includes a loop of conductive material 1125 that surrounds a patch of conductive material 1150, with a gap between the patch and the loop. In some embodiments, the unit cell 1100 is square, rectangular, or other suitable shape. Dimensions k 1, k 2, w, m 1, m 2, g 1, and g 2 represent substantially the same measurement dimension attributes as those of unit cell 400. Specific measurement dimensions are, for example, k1 = k2 = 2.8 mm, w = 0.2 mm, m1 = m2 = 2.6 mm, and g1 = g2 = 0.1 mm.

  FIG. 12A is a perspective view of an EM blocking structure 1200 according to some embodiments. Compared to the EM blocking structure 700, the EM blocking structure 1200 includes a patch layer 1230. The patch layer 1230 includes a plurality of unit cells 1235. Patch layer 1230 is similar to patch layer 840. A plurality of unit cells 1235 can be selected from unit cells 900, 1000, and 1100. For the sake of brevity, the description of these elements will not be repeated here. The plurality of unit cells 725 and the plurality of unit cells 730 of the conductor layer 720 are shifted so that the corners of the unit cells 725 and the unit cells 730 overlap with the central portions of the unit cells 1235 of the patch layer 1230. Are piled up. A broken line representing this overlap is shown in FIG.

  FIG. 12B is a plan view of the EM blocking structure 1200. A broken line “A” indicates a region where the first conductor layer 720 overlaps the second conductor layer 1230.

  FIG. 13 is a perspective view of an EM blocking structure 1300 according to some embodiments. The EM blocking structure 1300 is similar to the EM blocking structure 700. Unit cell 1325 is similar to unit cell 725, and unit cell 1330 is similar to unit cell 730. For the sake of brevity, the description of these unit cells will not be repeated here. Compared to the EM blocking structure 700, the EM blocking structure 1300 includes a gap 1335 instead of the unit cell 1325 or the unit cell 1330. In some embodiments, two or more unit cells 1320 or unit cells 1330 are replaced with voids 1335.

  FIG. 14 is a perspective view of an EM blocking structure 1400 according to some embodiments. The EM blocking structure 1400 is similar to the EM blocking structure 700. Unit cell 1325 is similar to unit cell 725, and unit cell 1330 is similar to unit cell 730. For the sake of brevity, the description of these unit cells will not be repeated here. Compared to the EM blocking structure 700, the EM blocking structure 1400 includes a gap 1435 instead of the unit cell 1325 or the unit cell 1330. In some embodiments, two or more unit cells 1325 or unit cells 1330 are replaced with voids 1435.

  FIG. 15 is a perspective view of the exemplary embodiment of FIG. 1 with an additional third conductor layer 1520 between the ground layer 110 and the second conductor layer 130.

  FIG. 16 (a) is a plan view of the exemplary embodiment of FIG. 7 with antenna element 1625 and antenna element 1630 on the surface of substrate 1600. In some embodiments, the antenna element 1625 includes a meander line-like portion similar to the unit cell 400. In some embodiments, the antenna element 1630 includes a meander line-like portion similar to the unit cell 400. In some embodiments, antenna element 1625 and antenna element 1630 have the same resonant frequency, and in other embodiments, antenna element 1625 and antenna element 1630 have different resonant frequencies. The resonant frequency of either or both of the antenna element 1625 and the antenna element 1630 is, for example, 5.27 GHz. In some embodiments, the antenna element 1625 has a resonant frequency higher than 5.27 GHz, and in other embodiments the antenna element 1625 has a resonant frequency lower than 5.27 GHz. In some embodiments, the substrate 1600 includes either an antenna element 1625 or an antenna element 1630. In some embodiments, substrate 1600 includes both antenna element 1625 and antenna element 1630. Some embodiments of the substrate 1600 contain more than two antenna elements. In some embodiments, antenna element 1625 and / or antenna element 1630 are linearly polarized, and in other embodiments, antenna element 1625 and / or antenna element 1630 are circularly polarized. .

  FIG. 16B is a cross section of the substrate 1600 taken along a cutting plane line B-B ′ in FIG. Dimensions h and d represent measured dimension attributes of substrate 1600 substantially the same as that of EM blocking structure 100. Specific measurement dimensions are, for example, h = 1.68 mm and d = 0.3 mm.

  FIG. 17 is a plan view of a conductor layer 1720 according to at least one embodiment. Conductor layer 1720 is similar to conductor layer 720. Compared with the conductor layer 720, the conductor layer 1720 has a pattern in which the plurality of unit cells 725 and the plurality of unit cells 730 are different. Conductive layer 1720 includes four vertical columns. In the first (leftmost) column, three unit cells 725 are sequentially arranged on the upper side in the vertical direction of adjacent unit cells 730. The second column (adjacent to the leftmost column) includes four unit cells 730. The third column includes one unit cell 730 arranged in the vertical direction adjacent to three sequentially arranged unit cells 725. The fourth column includes four unit cells 730 that are sequentially arranged in substantially the same manner as the second column. In some embodiments, the conductor layer 1720 includes 5 or more or less than 4 rows. One skilled in the art will recognize that further variations on the pattern of the plurality of unit cells 725 and the plurality of unit cells 730 are within the scope of this description.

  FIG. 18A is a plan view of a pattern of a plurality of unit cells 725 and a plurality of unit cells 730 of the conductor layer 1820 according to at least one embodiment. Conductor layer 1820 is similar to conductor layer 720. Compared with the conductor layer 720, the conductor layer 1820 has a pattern in which the plurality of unit cells 725 and the plurality of unit cells 730 are different. The conductor layer 1820 includes two rows in the vertical direction. In the first (leftmost) column, one unit cell 730 is continuously arranged on the upper side in the vertical direction of adjacent unit cells 725. The second column (adjacent to the leftmost column) includes two unit cells 730. In some embodiments, the conductor layer 1820 includes 3 or more or less than 2 rows. One skilled in the art will recognize that further variations on the pattern of the plurality of unit cells 725 and the plurality of unit cells 730 are within the scope of this description.

  FIG. 18B is a plan view of a pattern of the plurality of unit cells 725 and the plurality of unit cells 730 of the conductor layer 1830 according to at least one embodiment. Conductor layer 1830 is similar to conductor layer 720. Compared to the conductor layer 720, the conductor layer 1830 has a pattern in which the plurality of unit cells 725 and the plurality of unit cells 730 are different. The conductor layer 1830 includes three rows in the vertical direction. In the first (leftmost) column, three unit cells 725 are sequentially arranged in the vertical direction. In the second column (adjacent to the leftmost column), one unit cell 725 is arranged adjacently between two unit cells 730. The third column includes three sequentially arranged unit cells 725. In some embodiments, the conductor layer 1830 comprises four or more or fewer than three rows. One skilled in the art will recognize that further variations on the pattern of the plurality of unit cells 725 and the plurality of unit cells 730 are within the scope of this description.

  FIG. 19A is a plan view of the conductor layer 1920 according to at least one embodiment. Conductor layer 1920 is similar to conductor layer 720. Compared with the conductor layer 720, the conductor layer 1920 has a pattern in which the plurality of unit cells 725 and the plurality of unit cells 730 are different. The conductor layer 1920 has three rows in the vertical direction. In the first (leftmost) column, three unit cells 725 are sequentially arranged. The second (adjacent to the leftmost column) includes one unit cell 725 arranged in the vertical direction adjacent to two consecutive unit cells 730. The third column includes three sequentially arranged unit cells 730. In some embodiments, the conductor layer 1920 comprises four or more or fewer than three rows. One skilled in the art will recognize that further variations on the pattern of the plurality of unit cells 725 and the plurality of unit cells 730 are within the scope of this description.

  FIG. 19B is a plan view of the conductor layer 1930 according to at least one embodiment. Conductor layer 1930 is similar to conductor layer 720. Compared with the conductor layer 720, the conductor layer 1930 has a pattern in which the plurality of unit cells 725 and the plurality of unit cells 730 are different. The conductor layer 1930 includes three rows in the vertical direction. In the first (leftmost) column, adjacent to one unit cell 730, two unit cells 725 are sequentially arranged in the vertical direction. The second column (adjacent to the leftmost column) has the same configuration as unit cell 725 and unit cell 730 in the first column. The third column includes three sequentially arranged unit cells 730. In some embodiments, the conductor layer 1930 comprises four or more or fewer than three rows. One skilled in the art will recognize that further variations on the pattern of the plurality of unit cells 725 and the plurality of unit cells 730 are within the scope of this description.

20 (a) and 20 (b) are graphs of EM blocking characteristics of an exemplary embodiment of an electromagnetic blocking structure 100 in which the first conductor layer and the second conductor layer are composed of a plurality of meander line unit cells. is there. The degree of overlap between the solid line curve S11 ^x and the broken line curve S11 ^{y in} the graph relates to the degree of signal anisotropy. The suffixes x and y indicate the direction of the electric field of the incident plane wave. Thus, areas with greater overlap indicate less signal anisotropy. The relative permittivity of the dielectric material 50 is 4.7, the dielectric loss tangent is 0.02, and each conductor layer is made of copper having a thickness of 18 μm. The simulation was performed by the finite element method. The reflected wave was calculated on the assumption that the plane wave was incident from the + z direction, for example, the direction perpendicular to the first conductor layer 120. Simulations were performed using periodic boundary conditions. 20A is a graph 2000 of the reflection intensity of the EM blocking structure 100 as a function of frequency, and FIG. 20B is a graph 2000 ′ of the reflection phase of the electromagnetic blocking structure 100 as a function of frequency. . In the graph 2000 ′, points m1, m2, and m3 on S11 ^x correspond to reflection phases of 90 degrees, 0 degrees, and −90 degrees, respectively. From these results, the EM blocking effect of the electromagnetic blocking structure 100 is seen at approximately 2.87 GHz to 3.02 GHz, with an EM blocking bandwidth of approximately 150 MHz (ie, the difference between 2.87 GHz and 3.02 GHz). It is shown that.

  FIGS. 21A and 21B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 2100 and 2100 ′ were obtained based on an EM blocking structure in which a plurality of unit cells 125 and 135 have a similar structure to the EM blocking structure 100 similar to unit cell 500. Graphs 2100 and 2100 'were obtained using the finite element method described above.

  22A and 22B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 2200 and 2200 'were obtained based on an EM blocking structure in which a plurality of unit cells 125, 135, and 1525 have a structure similar to EM blocking structure 1500 similar to unit cell 400. Graphs 2200 and 2200 'were obtained using the finite element method described above.

  FIG. 23A and FIG. 23B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 2300 and 2300 ′ are based on an EM blocking structure in which a plurality of unit cells 125 and 1525 are similar to unit cell 500 and a plurality of unit cells 135 are similar to EM blocking structure 1500 similar to unit cell 900. I got it. Graphs 2300 and 2300 'were obtained using the finite element method described above.

  FIGS. 24A and 24B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 2400 and 2400 ′ are based on an EM blocking structure in which a plurality of unit cells 125 and 1525 are similar to unit cell 600 and a plurality of unit cells 135 are similar in structure to EM blocking structure 1500 similar to unit cell 900. I got it. Graphs 2400 and 2400 'were obtained using the finite element method described above.

  FIG. 25A and FIG. 25B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 2500 and 2500 ′ are based on an EM blocking structure in which a plurality of unit cells 125 and 1525 are similar to unit cell 400 and a plurality of unit cells 135 are similar in structure to EM blocking structure 1500 similar to unit cell 1000. I got it. Graphs 2500 and 2500 'were obtained using the finite element method described above.

  FIG. 26A and FIG. 26B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 2600 and 2600 ′ are based on an EM blocking structure in which a plurality of unit cells 125 and 1525 are similar to unit cell 400 and a plurality of unit cells 135 have a structure similar to EM blocking structure 1500 similar to unit cell 1100. I got it. Graphs 2600 and 2600 'were obtained using the finite element method described above.

  FIG. 27A and FIG. 27B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 2700 and 2700 'were obtained based on an EM blocking structure in which a plurality of unit cells 725 and 730 have a similar structure to the EM blocking structure 700 similar to unit cell 400. Graphs 2700 and 2700 'were obtained using the finite element method described above.

  FIG. 28A and FIG. 28B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 2800 and 2800 'were obtained based on an EM blocking structure in which a plurality of unit cells 725 and 730 have a similar structure to the EM blocking structure 700 similar to unit cell 500. Graphs 2800 and 2800 'were obtained using the finite element method described above.

  FIGS. 29A and 29B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 2900 and 2900 'were obtained based on an EM blocking structure in which a plurality of unit cells 725 and 730 have a similar structure to the EM blocking structure 700 similar to unit cell 600. Graphs 2900 and 2900 'were obtained using the finite element method described above.

  FIG. 30A and FIG. 30B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 3000 and 3000 'were obtained based on an EM blocking structure in which a plurality of unit cells 725 and 730 have a similar structure to the EM blocking structure 1700 similar to unit cell 400. Graphs 3000 and 3000 'were obtained using the finite element method described above.

  FIG. 31A and FIG. 31B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 3100 and 3100 ′ show an EM blocking structure 700 in which a plurality of unit cells 725 and 730 are similar to unit cell 400 and layer 720 is a 3 × 3 layer that includes four unit cells 725 and five unit cells 730. Acquired based on an EM blocking structure having a similar structure. Graphs 3100 and 3100 'were obtained using the finite element method described above.

  FIGS. 32A and 32B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 3200 and 3200 'were obtained based on an EM blocking structure in which a plurality of unit cells 1325 and 1330 have a similar structure to the EM blocking structure 1300 similar to unit cell 400. Graphs 3200 and 3200 'were obtained using the finite element method described above.

  FIG. 33A and FIG. 33B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 3300 and 3300 'were obtained based on an EM blocking structure having a plurality of unit cells 1325 and 1330 similar to unit cell 400 and void 1435 similar to EM blocking structure 1400 similar to unit cell 900. Graphs 3300 and 3300 'were obtained using the finite element method described above.

  FIGS. 34A and 34B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 3400 and 3400 ′ are based on an EM blocking structure in which a plurality of unit cells 725 and 730 are similar to unit cell 400 and a plurality of unit cells 1235 have a structure similar to EM blocking structure 1200 similar to unit cell 900. I got it. Graphs 3400 and 3400 'were obtained using the finite element method described above.

  FIG. 35A and FIG. 35B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 3500 and 3500 ′ are based on an EM blocking structure in which a plurality of unit cells 725 and 730 are similar to unit cell 500 and a plurality of unit cells 1235 have a structure similar to EM blocking structure 1200 similar to unit cell 900. I got it. Graphs 3500 and 3500 'were obtained using the finite element method described above.

  FIG. 36A and FIG. 36B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 3600 and 3600 ′ are based on an EM blocking structure in which a plurality of unit cells 725 and 730 are similar to unit cell 600 and a plurality of unit cells 1235 have a structure similar to EM blocking structure 1200 similar to unit cell 900. I got it. Graphs 3600 and 3600 'were obtained using the finite element method described above.

  FIG. 37A and FIG. 37B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 3700 and 3700 ′ are based on an EM blocking structure in which a plurality of unit cells 725 and 730 are similar to unit cell 400 and a plurality of unit cells 1235 have a structure similar to EM blocking structure 1200 similar to unit cell 1000. I got it. Graphs 3700 and 3700 'were obtained using the finite element method described above.

  FIG. 38A and FIG. 38B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 3800 and 3800 ′ are similar to unit cell 400 in which a plurality of unit cells 725 and 735 are arranged in a manner similar to the pattern shown in conductor layer 1820 of FIG. 18A, and a plurality of unit cells 1235 of patch layer 1230. However, it acquired based on the EM interruption | blocking structure which has the structure similar to the EM interruption | blocking structure 1200 which is the some meander line unit cell 400 arrange | positioned similarly to the pattern shown to the conductor layer 1830 of FIG.18 (b). Graphs 3800 and 3800 'were obtained using the finite element method described above.

FIG. 39 is a graph representing the bandwidth indicating the isotropic property with the center frequency as a function of the deviation% between the first conductor layer 720 and the patch layer 1230. The center frequency was the minimum value of S11 ^y intensity. The deviation% is determined by the amount of displacement of the plurality of unit cells such as the unit cell 725 and the unit cell 730 with respect to the plurality of patch cells such as the unit cell 1235, and is expressed as a percentage of the width of the plurality of unit cells. The graph 3900 was obtained based on an EM blocking structure having a plurality of unit cells 725 and 730 similar to the unit cell 400 and a plurality of unit cells 1235 having a structure similar to the EM blocking structure 1200 similar to the unit cell 900. The graph 3900 was acquired using the finite element method described above. The y-axis on the right side of the graph indicates the frequency of the observed isotropic band with the unit of megahertz (MHz). This data is further represented numerically in Table 1 (below). In Table 1, it can be seen that the EM blocking effect starts to become noticeable at a deviation of about 11% (11.43 in the deviation% column). This corresponds to a deviation of 12% to 88% of the diagonal distance of one unit cell. Therefore, the EM blocking effect is observed between 12% and 88% deviation.

  40A and 40B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 4000 and 4000 ′ are based on an EM blocking structure in which a plurality of unit cells 125 and 135 are similar to unit cell 400 and a plurality of unit cells 845 have a structure similar to EM blocking structure 800 similar to unit cell 900. I got it. Graphs 4000 and 4000 'were obtained using the finite element method described above.

  41 (a) and 41 (b) are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. In the graphs 4100 and 4100 ′, the plurality of unit cells 125 are similar to the unit cell 400 having a configuration similar to that in FIG. 19A, and the plurality of unit cells 135 similar to the unit cell 400 are illustrated in FIG. A plurality of unit cells 845 having the same configuration and acquired based on an EM blocking structure having a structure similar to the EM blocking structure 800 similar to the plurality of unit cells 900 having a 2 × 2 configuration. Graphs 4100 and 4100 'were obtained using the finite element method described above.

  42A and 42B are graphs of the reflection intensity with respect to frequency and the reflection phase with respect to frequency, respectively. Graphs 4200 and 4200 'were obtained based on an EM blocking structure in which a plurality of unit cells 125, 135, and 1525 have a similar structure to the EM blocking structure 1500 similar to unit cell 400. Graphs 4200 and 4200 'were obtained using the finite element method described above.

  Table 2 (below) expressed various misalignment percentages ("deviation%"), which is the deviation of the overlap of the unit cells of layer 120 and layer 1520 relative to layer 130, as a percentage (%) of the width of one unit cell. FIG. 16 shows data obtained from simulations performed on the exemplary embodiment of FIG. 15 using the same finite element method used in FIGS. 20 (a) and 20 (b).

DESCRIPTION OF SYMBOLS 100 ... EM interruption | blocking structure 110 ... Grounding layer 120 ... 1st conductor layer 125 ... Unit cell 130 ... 2nd conductor layer 135 ... Unit cell 140 ... 3rd conductor layer 400 ... unit cell 410 ... meander line structure 415 ... leg part 420, 430 ... connecting arm part 500 ... unit cell 510 ... first spiral 520 ... second spiral Line 530: Connection arm 600: Unit cell 610: First spiral 620: Second spiral 630: Connection arm 700: EM blocking structure 720 ... Conductor layer 725, 730 ... unit cell 800 ... EM blocking structure 840 ... patch layer 845, 900 ... unit cell 910 ... patch structure 1000 ... unit cell 1010 ... Loop structure 1100 ... Unit cell 1110 ... Loop slot structure 1125, 1150 ... Conductive material 1200 ... EM blocking structure 1230 ... Patch layer 1235 ... Unit cell 1300 ... EM blocking structure 1320 , 1325, 1330 ... Unit cell 1335 ... Air gap 1400 ... EM blocking structure 1435 ... Air gap 1500 ... EM blocking structure 1520 ... Third conductor layer 1525 ... Unit cell 1600 ... -Substrate 1625, 1630 ... Antenna element 1720, 1820, 1830, 1920, 1930 ... Conductor layer

Claims (14)

A dielectric substrate;
And at least one conductor layer in the dielectric substrate,
The at least one conductor layer comprises:
A plurality of first unit cells of the first type that do not have four-fold symmetry;
A plurality of second unit cells of the first type,
The plurality of first unit cells and the plurality of second unit cells are arranged in a grid pattern,
Each first unit cell in the plurality of first unit cells is oriented to form 90 degrees with respect to each second unit cell in the plurality of second unit cells;
Electromagnetic blocking structure. The electromagnetic shielding structure according to claim 1,
The at least one conductor layer comprises:
A first conductor layer;
A second conductor layer separated from the first conductor layer in the thickness direction of the dielectric substrate,
The first conductor layer includes the plurality of first unit cells;
The second conductor layer includes the plurality of second unit cells.
Electromagnetic blocking structure. The electromagnetic shielding structure according to claim 1,
The at least one conductor layer includes a first conductor layer;
The first conductor layer includes both the plurality of first unit cells and the plurality of second unit cells;
Electromagnetic blocking structure. The electromagnetic shielding structure according to any one of claims 1 to 3,
Each of the plurality of first and second unit cells of the first type is either a meander line structure, a point-symmetric double spiral structure, or a line-symmetric double spiral structure.
Electromagnetic blocking structure. The electromagnetic shielding structure according to any one of claims 1 to 3,
A third conductor layer having a plurality of third unit cells of the second type having a four-fold symmetry;
The plurality of third unit cells of the third conductor layer are arranged in a grid pattern;
Electromagnetic blocking structure. The electromagnetic shielding structure according to claim 5,
A diagonal line of one unit cell of the second conductor layer in the region where the grid pattern of the first conductor layer and the grid pattern of the second conductor layer overlap the first conductor layer and the second conductor layer. A distance of 12% to 88% of the length of
Electromagnetic blocking structure.
Electromagnetic blocking structure. The electromagnetic shielding structure according to claim 5 or 6,
Each of the plurality of third unit cells of the second type is either a patch structure, a loop structure, or a loop slot structure.
Electromagnetic blocking structure. At least one ground conductor layer;
At least one conductor layer; and
The at least one conductor layer comprises:
A plurality of first unit cells of the first type that do not have four-fold symmetry;
A plurality of second unit cells of the first type;
Including
The plurality of first unit cells and the plurality of second unit cells are arranged in a grid pattern,
A dielectric substrate in which each first unit cell in the plurality of first unit cells is oriented to form 90 degrees with respect to each second unit cell in the plurality of second unit cells. The dielectric substrate according to claim 8, wherein
Each of the plurality of first and second unit cells of the first type is either a meander line structure, a point-symmetric double spiral structure, or a line-symmetric double spiral structure.
Dielectric substrate. The dielectric substrate according to claim 8 or 9, wherein
A third conductor layer having a plurality of third unit cells of the second type having a four-fold symmetry;
The plurality of third unit cells of the third conductor layer are arranged in a grid pattern;
Dielectric substrate. The dielectric substrate according to claim 10, wherein
The at least one conductor layer includes a first conductor layer;
A diagonal line of one unit cell of the third conductor layer in a region where the grid pattern of the first conductor layer and the grid pattern of the third conductor layer overlap the first conductor layer and the third conductor layer. A distance of 12% to 88% of the length of
Dielectric substrate. The dielectric substrate according to claim 10 or 11,
Each of the plurality of third unit cells of the second type is either a patch structure, a loop structure, or a loop slot structure.
Dielectric substrate. The dielectric substrate according to any one of claims 8 to 12,
An antenna element formed on the top surface of the at least one conductor layer;
Dielectric substrate. A unit cell comprising conductive traces of dielectric material comprising:
A first spiral having at least one turn wherein the conductive trace is bent in a first direction;
A second spiral wound in at least one turn and having at least one turn;
A connecting arm connecting the first spiral to the second spiral;
Including unit cells.