JP2018006269A - Ceramic heater - Google Patents
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Abstract
【課題】基板の均熱化を図ることが可能なセラミックスヒータを提供する。【解決手段】セラミックスヒータ100は、セラミックスからなり、上面に被加熱物が載置される基材10と、基材10に埋設された発熱抵抗体20と、発熱抵抗体20の両端部にそれぞれ接続される端子30とを備える。発熱抵抗体20は、それぞれ、端子30と外側端部にて接続され、重なり合うことなく配置された2本の渦巻き状発熱抵抗要素21A,21Bからなる。2本の渦巻き状発熱抵抗要素21A,21Bは中心において環状に結合されている。【選択図】図2PROBLEM TO BE SOLVED: To provide a ceramic heater capable of soaking a substrate. A ceramic heater 100 is made of ceramics, and has a base material 10 on which an object to be heated is placed on the upper surface, a heat generating resistor 20 embedded in the base material 10, and both ends of the heat generating resistor 20. It includes a terminal 30 to be connected. The heat generation resistor 20 is composed of two spiral heat generation resistance elements 21A and 21B, which are connected to the terminal 30 at the outer end and arranged so as not to overlap each other. The two spiral heat generation resistance elements 21A and 21B are connected in a ring shape at the center. [Selection diagram] Fig. 2
Description
本発明は、半導体ウエハなどの被加熱物を加熱するセラミックスヒータに関する。 The present invention relates to a ceramic heater for heating an object to be heated such as a semiconductor wafer.
半導体ウエハなどの被加熱物を加熱するセラミックスヒータにおいて、基材の内部に配置された発熱抵抗体に電流を供給する端子が、発熱抵抗体の外側の両端部にそれぞれ接続されたものが存在する(例えば、特許文献1参照)。 In ceramic heaters for heating an object to be heated such as a semiconductor wafer, there are terminals in which terminals for supplying current to a heating resistor arranged inside a substrate are respectively connected to both ends of the heating resistor. (For example, refer to Patent Document 1).
しかしながら、上記従来のセラミックスヒータにおいては、発熱抵抗体は一筆書き可能な形状であるので、発熱抵抗体の中心に発熱抵抗要素を存在させることなく、中心に対して発熱抵抗体を対称的には配置することは困難であった。さらに、一般的なセラミックスヒータでは、基材、ひいては発熱抵抗体の中心にウエハ裏面に供給するガスの供給孔などを配置することが多い。そのため、基材の中心に対して対称的に加熱することは困難であった。 However, in the conventional ceramic heater, since the heating resistor has a shape that can be drawn with a single stroke, the heating resistor is not symmetrically located in the center of the heating resistor, and the heating resistor is symmetrical to the center. It was difficult to place. Further, in a general ceramic heater, a gas supply hole to be supplied to the back surface of the wafer is often disposed at the center of the base material and thus the heating resistor. Therefore, it was difficult to heat symmetrically with respect to the center of a base material.
本発明は、かかる事情に鑑みてなされたものであり、基材の中心に対して対称的な加熱を図ることが可能なセラミックスヒータを提供することを目的とする。 This invention is made | formed in view of this situation, and it aims at providing the ceramic heater which can aim at symmetrical heating with respect to the center of a base material.
第1の本発明は、セラミックスからなり、上面に被加熱物が載置されるセラミックス基材と、前記セラミックス基材に埋設された発熱抵抗体と、前記発熱抵抗体の両端部にそれぞれ接続される給電用端子とを備えたセラミックスヒータであって、前記発熱抵抗体は、それぞれ、前記給電用端子と外側端部にて接続され、重なり合うことなく配置された2本の渦巻き状発熱抵抗要素からなり、前記2本の渦巻き状発熱抵抗要素は中心において環状に結合されていることを特徴とする。 The first aspect of the present invention is a ceramic substrate made of ceramics, on which an object to be heated is placed, a heating resistor embedded in the ceramic substrate, and connected to both ends of the heating resistor. Each of the heating resistors is connected to the power supply terminal at an outer end, and is arranged from two spiral heating resistor elements arranged without overlapping each other. Thus, the two spiral heating resistance elements are connected in an annular shape at the center.
第2の本発明は、セラミックスからなり、上面に被加熱物が載置されるセラミックス基材と、前記セラミックス基材に埋設された発熱抵抗体と、前記発熱抵抗体に線対称性、点対称性及び回転対称性の何れでもない位置に配置された1組の給電用端子とを備えたセラミックスヒータであって、前記発熱抵抗体は、最外周に位置する円状発熱抵抗要素と、最外周に近接する前記給電用端子に対して前記セラミックス基材の中心を中心として180°反転した位置に位置する仮想端子と他の前記給電用端子との間を接続し、重なり合うことなく配置された2本の渦巻き状発熱抵抗要素とからなり、前記2本の渦巻き状発熱抵抗要素は中心において環状に結合されていることを特徴とする。 The second aspect of the present invention is a ceramic substrate made of ceramics, on which an object to be heated is placed, a heating resistor embedded in the ceramic substrate, and a linear symmetry and point symmetry in the heating resistor. A ceramic heater comprising a pair of power supply terminals arranged at a position that is neither in the direction of rotational property nor rotational symmetry, wherein the heating resistor comprises a circular heating resistance element located on the outermost periphery, an outermost periphery The virtual terminal located at a position inverted by 180 ° around the center of the ceramic substrate with respect to the power supply terminal adjacent to the power supply terminal and the other power supply terminal are connected and arranged without overlapping. The two spiral heating resistance elements are connected in a ring shape at the center.
第1及び第2の本発明によれば、2本の渦巻き状発熱抵抗要素は中心において環状に結合されている。これにより、発熱抵抗体の中心に発熱抵抗要素が存在することなく、発熱抵抗要素を中心に対して線対称に配置することが可能となる。そのため、基材の中心に対して対称的な加熱を図ることが可能となる。 According to the first and second aspects of the present invention, the two spiral heating resistance elements are connected in an annular shape at the center. Accordingly, the heating resistor element can be arranged in line symmetry with respect to the center without the heating resistor element existing at the center of the heating resistor. Therefore, it becomes possible to aim at symmetrical heating with respect to the center of a base material.
まず、本発明の実施形態に係るセラミックスヒータ100について図面を参照して、説明する。 First, a ceramic heater 100 according to an embodiment of the present invention will be described with reference to the drawings.
図1に示すように、セラミックスヒータ100は、図示しない被加熱物であるウエハ(基板)を吸着保持するための略円板状の絶縁体からなる基材10と、相互に短絡しないように基材10に埋設されている発熱抵抗体20とを備えている。 As shown in FIG. 1, the ceramic heater 100 is based on a substrate 10 made of a substantially disk-like insulator for adsorbing and holding a wafer (substrate), which is not shown, to be heated. And a heating resistor 20 embedded in the material 10.
なお、基材10には、発熱抵抗体20のほか、ウエハをジョンセン−ラーベック力により載置面11に引き付けるための静電チャック電極及び基材10の上方にプラズマを発生させるためのプラズマ電極のうち少なくとも一方が埋設されていてもよい。 In addition to the heating resistor 20, the substrate 10 includes an electrostatic chuck electrode for attracting the wafer to the mounting surface 11 by a Johnsen-Rahbek force and a plasma electrode for generating plasma above the substrate 10. At least one of them may be embedded.
ただし、セラミックスヒータ100は、電極に給電ロッドから電圧が印加されることによって発生するクーロン力により、基材10の表面に基板を吸引する静電チャックを兼用するものであってもよい。 However, the ceramic heater 100 may also serve as an electrostatic chuck that attracts the substrate to the surface of the base material 10 by a Coulomb force generated when a voltage is applied to the electrode from the power supply rod.
さらに、セラミックスヒータ100は、発熱抵抗体20に対して電力を供給するための一対の給電用の端子(給電端子)30を備えている。 Further, the ceramic heater 100 includes a pair of power supply terminals (power supply terminals) 30 for supplying power to the heating resistor 20.
端子30には、それぞれ基材10に埋設されている図示しない電流供給部材に接続されている。 Each terminal 30 is connected to a current supply member (not shown) embedded in the base material 10.
端子30と電流供給部材とはろう付け又は溶接されている。端子30は、箔、板、塊状のニッケル(Ni)、コバール(登録商標)(Fe−Ni−Co)、モリブデン(Mo)、タングステン(W)、又はモリブデン(Mo)及びタングステン(W)を主成分とする耐熱合金などの耐熱金属から構成される。電流供給部材はモリブデン(Mo)又はタングステン(W)などからなる。 The terminal 30 and the current supply member are brazed or welded. The terminal 30 is mainly made of foil, plate, massive nickel (Ni), Kovar (registered trademark) (Fe-Ni-Co), molybdenum (Mo), tungsten (W), or molybdenum (Mo) and tungsten (W). It is composed of a heat-resistant metal such as a heat-resistant alloy as a component. The current supply member is made of molybdenum (Mo) or tungsten (W).
基材10は、例えば、アルミナ、窒化アルミニウム、窒化ケイ素等のセラミックス焼結体からなるセラミックス基材である。基材10は、上記の材料を所定形状の型に入れて成形し、緻密化させるため、例えばホットプレス焼成等によって円板状に作製すればよい。 The base material 10 is a ceramic base material made of a ceramic sintered body such as alumina, aluminum nitride, or silicon nitride. The base material 10 may be formed into a disk shape by hot press firing or the like, for example, in order to form and densify the above material in a mold having a predetermined shape.
発熱抵抗体20は、本実施形態では、モリブデン(Mo)又はタングステン(W)等の耐熱金属などの箔からなり、面状の形態をしている。ただし、発熱抵抗体20は、耐熱金属などからなる膜、板、線、メッシュ、繊維、コイル、リボン状など構成であってもよい。そして、本実施形態では、発熱抵抗体20の厚さは一定となっている。 In this embodiment, the heating resistor 20 is made of a foil such as a heat-resistant metal such as molybdenum (Mo) or tungsten (W) and has a planar shape. However, the heating resistor 20 may have a configuration such as a film, a plate, a wire, a mesh, a fiber, a coil, or a ribbon made of a heat-resistant metal. In the present embodiment, the thickness of the heating resistor 20 is constant.
基材10の間に発熱抵抗体20を挟み込んだ状態で、基材10は焼成される。 The base material 10 is baked in a state where the heating resistor 20 is sandwiched between the base materials 10.
発熱抵抗体20のパターンの一例を図2を参照して説明する。 An example of the pattern of the heating resistor 20 will be described with reference to FIG.
発熱抵抗体20は、それぞれ、端子30と最外周の円弧状発熱抵抗要素22Aa,22Baの近傍に位置する外側端部にて接続され、重なり合うことなく配置された2本の渦巻き状発熱抵抗要素21A,21Bからなっている。これら2本の渦巻き状発熱抵抗要素21A,21Bは中心において環状に結合されている。 The heating resistor 20 is connected at the outer end located in the vicinity of the terminal 30 and the outermost arc-shaped heating resistor elements 22Aa, 22Ba, respectively, and two spiral heating resistor elements 21A arranged without overlapping each other. , 21B. These two spiral heating resistance elements 21A and 21B are connected in an annular shape at the center.
ここでは、第1の渦巻き状発熱抵抗要素21Aは、端子30に端部が接続され、同心の環状領域に配置された複数の円弧状発熱抵抗要素22Aa〜22Adと、隣接する環状領域に配置された円弧状発熱抵抗要素22Aa〜22Adの端部を直線状に接続する直線状発熱抵抗要素23Aa〜23Acとから構成されている。 Here, the first spiral heating resistor element 21 </ b> A is connected to the terminal 30, and is arranged in a plurality of arc-shaped heating resistor elements 22 </ b> Aa to 22 </ b> Ad arranged in concentric annular regions and adjacent annular regions. The arc-shaped heat generating resistance elements 22Aa to 22Ad are linearly connected to the heat generating resistance elements 23Aa to 23Ac.
一方、第2の渦巻き状発熱抵抗要素21Bは、端子30に端部が接続され、同心の環状領域に配置された複数の円弧状発熱抵抗要素22Ba〜22Bdと、隣接する環状領域に配置された円弧状発熱抵抗要素22Ba〜22Bdの端部を直線状に接続する直線状発熱抵抗要素23Ba〜23Bcとから構成されている。 On the other hand, the second spiral heating resistor element 21B has an end connected to the terminal 30, and is arranged in a plurality of arc-shaped heating resistor elements 22Ba to 22Bd arranged in concentric annular regions and in an adjacent annular region. It is comprised from linear heating resistance element 23Ba-23Bc which connects the edge part of arc-shaped heating resistance element 22Ba-22Bd linearly.
そして、円弧状発熱抵抗要素22Aaは円弧状発熱抵抗要素22Baと、円弧状発熱抵抗要素22Abは円弧状発熱抵抗要素22Bbと、円弧状発熱抵抗要素22Acは円弧状発熱抵抗要素22Bcと、円弧状発熱抵抗要素22Adは円弧状発熱抵抗要素22Bdとそれぞれ同じ環状領域に配置されている。 The arc-shaped heating resistor element 22Aa is an arc-shaped heating resistor element 22Ba, the arc-shaped heating resistor element 22Ab is an arc-shaped heating resistor element 22Bb, the arc-shaped heating resistor element 22Ac is an arc-shaped heating resistor element 22Bc, and an arc-shaped heating element. The resistance element 22Ad is disposed in the same annular area as the arc-shaped heat generation resistance element 22Bd.
さらに、円弧状発熱抵抗要素22Ad、直線状発熱抵抗要素23Ac、円弧状発熱抵抗要素22Bd及び直線状発熱抵抗要素23Bcは、この順に環状に接続され環状の部分を形成している。 Furthermore, the arc-shaped heating resistor element 22Ad, the linear heating resistor element 23Ac, the arc-shaped heating resistor element 22Bd, and the linear heating resistor element 23Bc are annularly connected in this order to form an annular portion.
なお、環状領域は、ほぼ環状の領域であればよく、図示しないが、基材10の厚さ方向に貫通する貫通孔及び基材10内に配置された温度検出手段などの各種部品との干渉を避けるために、部分的に蛇行した領域を有していてもよい。 Note that the annular region may be a substantially annular region, and although not shown, it interferes with various parts such as a through-hole penetrating in the thickness direction of the base material 10 and a temperature detecting means disposed in the base material 10. In order to avoid this, a partially serpentine region may be provided.
また。ここでは、円弧状発熱抵抗要素22Aa〜22Ad,22Ba〜22Bd及び直線状発熱抵抗要素23Aa〜23Ac,23Ba〜23Bcの厚さ及び幅は同一であるが、これに限定されない。 Also. Here, the thickness and width of the arc-shaped heat generating resistor elements 22Aa to 22Ad, 22Ba to 22Bd and the linear heat generating resistor elements 23Aa to 23Ac and 23Ba to 23Bc are the same, but are not limited thereto.
以上のように構成された発熱抵抗体20は、中心Oを中心とする点対称となっている。これにより、基材10の上面の加熱に対称性をもたらすことが可能となる。 The heating resistor 20 configured as described above is point-symmetric about the center O. Thereby, it becomes possible to bring symmetry to the heating of the upper surface of the substrate 10.
従来のセラミックスヒータでは、発熱抵抗体が分岐を有しておらず、中心Oを中心として点対称に配置する場合、発熱抵抗体が中心Oを通っていた。しかし、セラミックスヒータ100の中心Oには、ウエハ裏面に供給するガスの供給孔などが配置されることが多く、このように発熱抵抗体を配置することは困難であった。 In the conventional ceramic heater, the heating resistor does not have a branch, and the heating resistor passes through the center O when it is arranged symmetrically with respect to the center O. However, in many cases, the center O of the ceramic heater 100 is provided with a supply hole for a gas supplied to the back surface of the wafer, and it is difficult to arrange the heating resistor in this way.
なお、環状の部分を形成する円弧状発熱抵抗要素22Ad,22Bd及び直線状発熱抵抗要素23Ac,23Bcの幅は、環状の部分以外の発熱抵抗体20の幅の半分程度であることが好ましい。これにより、2つに分岐した発熱抵抗体20の単位長さ当りの抵抗の合計が、分岐していない発熱抵抗体20の単位長さ当りの抵抗相当となり、2つに分岐した発熱抵抗体20が存在する部分で局所的に加熱が大きくなることを抑制することが可能となる。 In addition, it is preferable that the widths of the arc-shaped heating resistor elements 22Ad and 22Bd and the linear heating resistor elements 23Ac and 23Bc forming the annular portion are about half of the width of the heating resistor 20 other than the annular portion. Accordingly, the total resistance per unit length of the heating resistor 20 branched into two corresponds to the resistance per unit length of the heating resistor 20 not branched, and the heating resistor 20 branched into two. It is possible to suppress the local increase in heating in the portion where the slag exists.
なお、渦巻き状発熱抵抗要素21A,21Bは、円弧状と直線状の発熱抵抗要素からなるものに限定されない。渦巻き状発熱抵抗要素21A,21Bは、全体として大略渦巻き状であればよく、曲線状の発熱抵抗要素のみからなるものであっても、直線状の発熱抵抗要素が連結されてなるものであってもよい。 The spiral heating resistance elements 21A and 21B are not limited to those composed of arcuate and linear heating resistance elements. The spiral heating resistance elements 21A and 21B may be generally spiral as a whole, and even if they are composed of only curved heating resistance elements, linear heating resistance elements are connected to each other. Also good.
なお、本発明は、給電用の端子30が円弧状発熱抵抗要素22Aa〜22Adの最外周に、基材10の中心Oを中心として180°反転した位置にある場合において、発熱抵抗体20の対称性を向上させ、その結果、基材10の温度均一性を向上させることを目的としている。 In the present invention, the feeding resistor 30 is symmetrical when the power feeding terminal 30 is located at the outermost periphery of the arc-shaped heating resistor elements 22Aa to 22Ad at a position inverted by 180 ° with respect to the center O of the base material 10. The purpose is to improve the temperature uniformity of the substrate 10 as a result.
しかし、給電用の端子30は、本セラミックスヒータ100を搭載する半導体プロセス装置との位置関係によって決定され、必ずしも最外周に配置できない、また対称性よく配置できない場合がある。 However, the power supply terminal 30 is determined by the positional relationship with the semiconductor process apparatus on which the ceramic heater 100 is mounted, and may not necessarily be disposed on the outermost periphery, or may not be disposed with good symmetry.
その場合は、図3に示すように、さらに円弧状発熱抵抗要素22Aa〜22Adの外側に円状発熱抵抗要素24を設けることによってある程度の対称性を維持することが可能になる。このとき、2本の渦巻き状発熱抵抗要素21A,21Bは、最外周に近接する端子32に対して基材10の中心Oを中心として180°反転した位置に位置する仮想端子31と他の端子30との間を接続し、重なり合うことなく配置すればよい。 In that case, as shown in FIG. 3, a certain degree of symmetry can be maintained by providing a circular heating resistor element 24 outside the arc-shaped heating resistor elements 22Aa to 22Ad. At this time, the two spiral heating resistance elements 21A and 21B are arranged such that the virtual terminal 31 and other terminals are located at a position that is inverted by 180 ° around the center O of the substrate 10 with respect to the terminal 32 close to the outermost periphery. 30 may be connected and arranged without overlapping.
以下、本発明の実施例を具体的に挙げ、本発明を説明する。 Hereinafter, the present invention will be described with specific examples of the present invention.
(実施例1)
実施例1では、金属からなる発熱抵抗体20を埋設した酸化イットリウムを添加した窒化アルミニウムからなる基材10よりセラミックスヒータ100を得た。
Example 1
In Example 1, the ceramic heater 100 was obtained from the base material 10 made of aluminum nitride added with yttrium oxide in which a heating resistor 20 made of metal was embedded.
[セラミックスヒータの作製]
窒化アルミニウム粉末97質量%、酸化イットリウム粉末3質量%からなる粉末混合物を得て、これを型に充填して一軸加圧処理を施した。これによって、直径340mm、厚さ10mmの第一層を形成した。
[Production of ceramic heater]
A powder mixture composed of 97% by mass of aluminum nitride powder and 3% by mass of yttrium oxide powder was obtained, filled in a mold, and subjected to uniaxial pressure treatment. Thereby, a first layer having a diameter of 340 mm and a thickness of 10 mm was formed.
次に、この第一層の上に、図2に示す形状の発熱抵抗体20となる直径290mmのモリブデン製のメッシュ(線径0.1mm、目開き50メッシュ)を載置した。続いて、先に形成した粉末混合物を発熱抵抗体20の上に所定の厚さに充填し、第二層を形成した。そして、10MPaの圧力で、焼成温度1800℃、焼成時間2時間でホットプレス焼成を行い、直径340mm、厚さ20mmのセラミックス焼結体を得た。 Next, a molybdenum mesh (wire diameter: 0.1 mm, opening: 50 mesh) having a diameter of 290 mm to be the heating resistor 20 having the shape shown in FIG. 2 was placed on the first layer. Subsequently, the previously formed powder mixture was filled on the heating resistor 20 to a predetermined thickness to form a second layer. Then, hot press firing was performed at a pressure of 10 MPa at a firing temperature of 1800 ° C. and a firing time of 2 hours, to obtain a ceramic sintered body having a diameter of 340 mm and a thickness of 20 mm.
その後全面に研削、研磨加工を行い、表面粗さをRa0.4μm、平面度0.9μmとした。 Thereafter, the entire surface was ground and polished, and the surface roughness was Ra 0.4 μm and the flatness was 0.9 μm.
端子30は裏面より発熱抵抗体20まで直径8mmの穴加工を行い、露出した発熱抵抗体20に直径8mmの円筒状ニッケル製金属端子を銀ロウ付けして形成した。 The terminal 30 was formed by drilling a hole having a diameter of 8 mm from the back surface to the heating resistor 20 and silver brazing a cylindrical nickel metal terminal having a diameter of 8 mm on the exposed heating resistor 20.
[評価結果]
セラミックスヒータ100のウエハ載置面に黒色化したダミーウエハを載せ、端子30に電力を供給してセラミックスヒータ100を昇温し、ダミーウエハ表面の温度をIRカメラで測定した。ダミーウエハの表面温度が500℃に到達した時点から15分間、端子30に供給する電力を同じにした。その後のダミーウエハの温度分布を測定した。
[Evaluation results]
A black dummy wafer was placed on the wafer mounting surface of the ceramic heater 100, electric power was supplied to the terminals 30 to raise the temperature of the ceramic heater 100, and the temperature of the dummy wafer surface was measured with an IR camera. The power supplied to the terminals 30 was made the same for 15 minutes from the time when the surface temperature of the dummy wafer reached 500 ° C. Thereafter, the temperature distribution of the dummy wafer was measured.
最大温度と最少温度との温度差は5℃と小さく、セラミックスヒータ100の均熱性は良好であることが分った。また、端子30の位置の対称性の悪さも、発熱抵抗体20を図2に示す形状とすることにより緩和できることが分った。 The temperature difference between the maximum temperature and the minimum temperature was as small as 5 ° C., and it was found that the thermal uniformity of the ceramic heater 100 was good. It was also found that the poor symmetry of the position of the terminal 30 can be alleviated by making the heating resistor 20 the shape shown in FIG.
(実施例2)
発熱抵抗体20の形状、及び端子30,32の配置を図3に示すようにしたこと以外は、実施例1と同一とした。
(Example 2)
Except that the shape of the heating resistor 20 and the arrangement of the terminals 30 and 32 were as shown in FIG.
[評価結果]
最大温度と最少温度との温度差は6℃と小さく、セラミックスヒータ100の均熱性は良好であることが分った。また、端子30の位置の対称性の悪さも、発熱抵抗体20を図3に示す形状とすることにより緩和できることが分った。
[Evaluation results]
The temperature difference between the maximum temperature and the minimum temperature was as small as 6 ° C., and it was found that the thermal uniformity of the ceramic heater 100 was good. It has also been found that the poor symmetry of the position of the terminal 30 can be alleviated by making the heating resistor 20 the shape shown in FIG.
(比較例1)
発熱抵抗体120の形状、及び端子30,30の配置を図4に示すようにしたこと以外は、実施例1と同一とした。具体的には、発熱抵抗体120は、図2に示す発熱抵抗体20と比較して、円弧状発熱抵抗要素22Ad、及び円弧状発熱抵抗要素22Ad,22Bd間を接続する直線状発熱抵抗要素23Acの部分を削除して、中心部の環状部分を半環状にした。
(Comparative Example 1)
Except that the shape of the heating resistor 120 and the arrangement of the terminals 30 are as shown in FIG. Specifically, the heating resistor 120 is, as compared with the heating resistor 20 shown in FIG. 2, the arc-shaped heating resistor element 22Ad and the linear heating resistor element 23Ac that connects the arc-shaped heating resistor elements 22Ad and 22Bd. This part was deleted, and the annular part at the center was made semi-annular.
[評価結果]
最大温度と最少温度との温度差は10℃と実施例1に比較して大きかった。
[Evaluation results]
The temperature difference between the maximum temperature and the minimum temperature was 10 ° C., which was larger than that in Example 1.
(比較例2)
発熱抵抗体220の形状、及び端子30,32の配置を図5に示すようにしたこと以外は、実施例1と同一とした。具体的には、発熱抵抗体220は、図3に示す発熱抵抗体20と比較して、円弧状発熱抵抗要素22Bd、及び円弧状発熱抵抗要素22Ad,22Bd間を接続する直線状発熱抵抗要素23Bcの部分を削除して、中心部の環状部分を半環状にした。さらに、、発熱抵抗体220は、図3に示す発熱抵抗体20と比較して、円弧状発熱抵抗要素22Aa,22Ab,22Ac及び円弧状発熱抵抗要素22Ba,22Bb,22Bc,22Bdを順に接続する直線状発熱抵抗要素23Aa,23Bb,23Bcを削除する共に、円弧状発熱抵抗要素22Aa,22Ba及び直線状発熱抵抗要素23Abを順に接続する円弧状発熱抵抗要素25A,25B、円弧状発熱抵抗要素22Bb,23Ab及び直線状発熱抵抗要素23Bcを順に接続する円弧状発熱抵抗要素25C,25D、並びに直線状発熱抵抗要素23Baと円状発熱抵抗要素24とを接続する円弧状発熱抵抗要素25Eを追加した。
(Comparative Example 2)
Except that the shape of the heating resistor 220 and the arrangement of the terminals 30 and 32 are as shown in FIG. Specifically, the heating resistor 220 is, as compared with the heating resistor 20 shown in FIG. 3, an arc-shaped heating resistor element 22Bd and a linear heating resistor element 23Bc that connects the arc-shaped heating resistor elements 22Ad and 22Bd. This part was deleted, and the annular part at the center was made semi-annular. Furthermore, the heating resistor 220 is a straight line connecting the arc-shaped heating resistor elements 22Aa, 22Ab, 22Ac and the arc-shaped heating resistor elements 22Ba, 22Bb, 22Bc, 22Bd in order, as compared with the heating resistor 20 shown in FIG. The arc-shaped heating resistor elements 23Aa, 23Bb, 23Bc are deleted and the arc-shaped heating resistor elements 25A, 25B and the arc-shaped heating resistor elements 22Bb, 23Ab are connected in order. In addition, arc-shaped heating resistor elements 25C and 25D for connecting the linear heating resistor element 23Bc in order, and an arc-shaped heating resistor element 25E for connecting the linear heating resistor element 23Ba and the circular heating resistor element 24 are added.
[評価結果]
最大温度と最少温度との温度差は12℃と実施例2に比較して大きかった。
[Evaluation results]
The temperature difference between the maximum temperature and the minimum temperature was 12 ° C., which was larger than that in Example 2.
10…基材(セラミックス基材)、 20…発熱抵抗体、 21A,21B…渦巻き状発熱抵抗要素、 22Aa〜22Ad,22Ba〜22Bd…円弧状発熱抵抗要素、 23Aa〜23Ac,23Ba〜23Bc…直線状発熱抵抗要素、 24…円状発熱抵抗要素、 30,32…端子(給電用端子)、 31…仮想端子、 100…セラミックスヒータ。 DESCRIPTION OF SYMBOLS 10 ... Base material (ceramics base material), 20 ... Heat generating resistor, 21A, 21B ... Spiral heat generating resistive element, 22Aa-22Ad, 22Ba-22Bd ... Arc-shaped heat generating resistive element, 23Aa-23Ac, 23Ba-23Bc ... Linear Heat generation resistance element, 24 ... Circular heat generation resistance element, 30, 32 ... Terminal (power supply terminal), 31 ... Virtual terminal, 100 ... Ceramic heater.
Claims (2)
前記セラミックス基材に埋設された発熱抵抗体と、
前記発熱抵抗体の両端部にそれぞれ接続される給電用端子とを備えたセラミックスヒータであって、
前記発熱抵抗体は、それぞれ、前記給電用端子と外側端部にて接続され、重なり合うことなく配置された2本の渦巻き状発熱抵抗要素からなり、前記2本の渦巻き状発熱抵抗要素は中心において環状に結合されていることを特徴とするセラミックスヒータ。 A ceramic substrate made of ceramics, on which an object to be heated is placed, and
A heating resistor embedded in the ceramic substrate;
A ceramic heater provided with power supply terminals respectively connected to both ends of the heating resistor,
Each of the heating resistors comprises two spiral heating resistance elements that are connected to the power feeding terminal at the outer end and are arranged without overlapping, and the two spiral heating resistance elements are at the center. A ceramic heater characterized by being connected in an annular shape.
前記セラミックス基材に埋設された発熱抵抗体と、
前記発熱抵抗体に線対称性、点対称性及び回転対称性の何れでもない位置に配置された1組の給電用端子とを備えたセラミックスヒータであって、
前記発熱抵抗体は、最外周に位置する円状発熱抵抗要素と、最外周に近接する前記給電用端子に対して前記セラミックス基材の中心を中心として180°反転した位置に位置する仮想端子と他の前記給電用端子との間を接続し、重なり合うことなく配置された2本の渦巻き状発熱抵抗要素とからなり、前記2本の渦巻き状発熱抵抗要素は中心において環状に結合されていることを特徴とするセラミックスヒータ。 A ceramic substrate made of ceramics, on which an object to be heated is placed, and
A heating resistor embedded in the ceramic substrate;
A ceramic heater comprising a pair of power feeding terminals arranged at a position that is not line-symmetric, point-symmetric, or rotationally symmetric to the heating resistor,
The heating resistor is a circular heating resistor element located at the outermost periphery, and a virtual terminal located at a position 180 ° inverted with respect to the power supply terminal adjacent to the outermost periphery around the center of the ceramic substrate. It is composed of two spiral heating resistance elements that are connected to other power supply terminals and arranged without overlapping, and the two spiral heating resistance elements are connected in a ring shape at the center. Ceramic heater characterized by
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| WO2020153596A1 (en) * | 2019-01-23 | 2020-07-30 | 주식회사 미코세라믹스 | Ceramic heater |
| CN115938995A (en) * | 2023-02-24 | 2023-04-07 | 深圳市新凯来技术有限公司 | Wafer heating device and semiconductor processing equipment |
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