JP2018083893A - Solid resin composition for sealing and rearrangement wafer therewith, semiconductor package, and production method thereof - Google Patents
Solid resin composition for sealing and rearrangement wafer therewith, semiconductor package, and production method thereof Download PDFInfo
- Publication number
- JP2018083893A JP2018083893A JP2016227434A JP2016227434A JP2018083893A JP 2018083893 A JP2018083893 A JP 2018083893A JP 2016227434 A JP2016227434 A JP 2016227434A JP 2016227434 A JP2016227434 A JP 2016227434A JP 2018083893 A JP2018083893 A JP 2018083893A
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- solid resin
- wafer
- sealing
- mass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 58
- 239000007787 solid Substances 0.000 title claims abstract description 57
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000007789 sealing Methods 0.000 title abstract description 11
- 230000008707 rearrangement Effects 0.000 title abstract 4
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 40
- 239000003822 epoxy resin Substances 0.000 claims abstract description 38
- 229920005989 resin Polymers 0.000 claims abstract description 29
- 239000011347 resin Substances 0.000 claims abstract description 29
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 27
- 239000000945 filler Substances 0.000 claims abstract description 17
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 claims abstract description 16
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 125000004437 phosphorous atom Chemical group 0.000 claims abstract description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 10
- 239000003566 sealing material Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 31
- 125000004432 carbon atom Chemical group C* 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 15
- 229920006395 saturated elastomer Polymers 0.000 claims description 10
- 229930195734 saturated hydrocarbon Natural products 0.000 claims description 9
- 229930195735 unsaturated hydrocarbon Natural products 0.000 claims description 9
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 8
- 239000008393 encapsulating agent Substances 0.000 claims description 7
- 238000000748 compression moulding Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 3
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- -1 alkyl bismaleimide Chemical compound 0.000 description 31
- 239000005011 phenolic resin Substances 0.000 description 17
- 125000002947 alkylene group Chemical group 0.000 description 16
- 125000000217 alkyl group Chemical group 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 13
- 150000001450 anions Chemical class 0.000 description 12
- 239000000203 mixture Substances 0.000 description 10
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 9
- 239000007822 coupling agent Substances 0.000 description 9
- 239000003063 flame retardant Substances 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 8
- 150000002430 hydrocarbons Chemical group 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000001993 wax Substances 0.000 description 7
- 229920003986 novolac Polymers 0.000 description 6
- 229920003192 poly(bis maleimide) Polymers 0.000 description 6
- 229920000098 polyolefin Polymers 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- 125000002529 biphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C12)* 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 5
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 125000001931 aliphatic group Chemical group 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004305 biphenyl Substances 0.000 description 4
- 235000010290 biphenyl Nutrition 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 150000004985 diamines Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 239000006082 mold release agent Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- UTOPWMOLSKOLTQ-UHFFFAOYSA-N octacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O UTOPWMOLSKOLTQ-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920001568 phenolic resin Polymers 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- IPJGAEWUPXWFPL-UHFFFAOYSA-N 1-[3-(2,5-dioxopyrrol-1-yl)phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC(N2C(C=CC2=O)=O)=C1 IPJGAEWUPXWFPL-UHFFFAOYSA-N 0.000 description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- 101150091203 Acot1 gene Proteins 0.000 description 2
- 102100025854 Acyl-coenzyme A thioesterase 1 Human genes 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 244000043261 Hevea brasiliensis Species 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229920000459 Nitrile rubber Polymers 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- 125000000732 arylene group Chemical group 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229920003052 natural elastomer Polymers 0.000 description 2
- 229920001194 natural rubber Polymers 0.000 description 2
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 2
- KYQKIQNFSSXMJR-UHFFFAOYSA-L phthalate tetraphenylphosphanium Chemical compound C(C=1C(C(=O)[O-])=CC=CC1)(=O)[O-].C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 KYQKIQNFSSXMJR-UHFFFAOYSA-L 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- OBDUMNZXAIUUTH-HWKANZROSA-N (e)-tetradec-2-ene Chemical group CCCCCCCCCCC\C=C\C OBDUMNZXAIUUTH-HWKANZROSA-N 0.000 description 1
- JRQJLSWAMYZFGP-UHFFFAOYSA-N 1,1'-biphenyl;phenol Chemical compound OC1=CC=CC=C1.C1=CC=CC=C1C1=CC=CC=C1 JRQJLSWAMYZFGP-UHFFFAOYSA-N 0.000 description 1
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical group C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 150000003923 2,5-pyrrolediones Chemical class 0.000 description 1
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical class OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 1
- ZGDMDBHLKNQPSD-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxyphenyl)phenol Chemical group C1=C(O)C(N)=CC=C1C1=CC=C(N)C(O)=C1 ZGDMDBHLKNQPSD-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- OVEUFHOBGCSKSH-UHFFFAOYSA-N 2-methyl-n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound CC1=CC=CC=C1N(CC1OC1)CC1OC1 OVEUFHOBGCSKSH-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- KWOIWTRRPFHBSI-UHFFFAOYSA-N 4-[2-[3-[2-(4-aminophenyl)propan-2-yl]phenyl]propan-2-yl]aniline Chemical compound C=1C=CC(C(C)(C)C=2C=CC(N)=CC=2)=CC=1C(C)(C)C1=CC=C(N)C=C1 KWOIWTRRPFHBSI-UHFFFAOYSA-N 0.000 description 1
- HESXPOICBNWMPI-UHFFFAOYSA-N 4-[2-[4-[2-(4-aminophenyl)propan-2-yl]phenyl]propan-2-yl]aniline Chemical compound C=1C=C(C(C)(C)C=2C=CC(N)=CC=2)C=CC=1C(C)(C)C1=CC=C(N)C=C1 HESXPOICBNWMPI-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- BCJVBDBJSMFBRW-UHFFFAOYSA-N 4-diphenylphosphanylbutyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)CCCCP(C=1C=CC=CC=1)C1=CC=CC=C1 BCJVBDBJSMFBRW-UHFFFAOYSA-N 0.000 description 1
- OECTYKWYRCHAKR-UHFFFAOYSA-N 4-vinylcyclohexene dioxide Chemical compound C1OC1C1CC2OC2CC1 OECTYKWYRCHAKR-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XFXNBPGALBHMCZ-UHFFFAOYSA-N C(#N)[N-]C#N.C(CCC)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 Chemical compound C(#N)[N-]C#N.C(CCC)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 XFXNBPGALBHMCZ-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 101710199394 TATA-box-binding protein 3 Proteins 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- CWRYPZZKDGJXCA-UHFFFAOYSA-N acenaphthene Chemical group C1=CC(CC2)=C3C2=CC=CC3=C1 CWRYPZZKDGJXCA-UHFFFAOYSA-N 0.000 description 1
- 125000004054 acenaphthylenyl group Chemical group C1(=CC2=CC=CC3=CC=CC1=C23)* 0.000 description 1
- HXGDTGSAIMULJN-UHFFFAOYSA-N acetnaphthylene Natural products C1=CC(C=C2)=C3C2=CC=CC3=C1 HXGDTGSAIMULJN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- PEKMXCRKYQVRCK-UHFFFAOYSA-N benzene-1,4-diol;phenol Chemical compound OC1=CC=CC=C1.OC1=CC=C(O)C=C1 PEKMXCRKYQVRCK-UHFFFAOYSA-N 0.000 description 1
- VUKHQPGJNTXTPY-UHFFFAOYSA-N but-2-enylbenzene Chemical group CC=CCC1=CC=CC=C1 VUKHQPGJNTXTPY-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- WIRWWEWSGCEDBP-UHFFFAOYSA-N cyanoiminomethylideneazanide tetraphenylphosphanium Chemical compound [N-](C#N)C#N.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 WIRWWEWSGCEDBP-UHFFFAOYSA-N 0.000 description 1
- ZXKWUYWWVSKKQZ-UHFFFAOYSA-N cyclohexyl(diphenyl)phosphane Chemical compound C1CCCCC1P(C=1C=CC=CC=1)C1=CC=CC=C1 ZXKWUYWWVSKKQZ-UHFFFAOYSA-N 0.000 description 1
- DEKLIKGLDMCMJG-UHFFFAOYSA-M decanoate;tetrabutylphosphanium Chemical compound CCCCCCCCCC([O-])=O.CCCC[P+](CCCC)(CCCC)CCCC DEKLIKGLDMCMJG-UHFFFAOYSA-M 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical group C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000004206 montan acid ester Substances 0.000 description 1
- 235000013872 montan acid ester Nutrition 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- JAYXSROKFZAHRQ-UHFFFAOYSA-N n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound C1OC1CN(C=1C=CC=CC=1)CC1CO1 JAYXSROKFZAHRQ-UHFFFAOYSA-N 0.000 description 1
- 125000004957 naphthylene group Chemical group 0.000 description 1
- 229930014626 natural product Natural products 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- DOXFBSZBACYHFY-UHFFFAOYSA-N phenol;stilbene Chemical compound OC1=CC=CC=C1.C=1C=CC=CC=1C=CC1=CC=CC=C1 DOXFBSZBACYHFY-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- IYMSIPPWHNIMGE-UHFFFAOYSA-N silylurea Chemical compound NC(=O)N[SiH3] IYMSIPPWHNIMGE-UHFFFAOYSA-N 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- GHPYAGKTTCKKDF-UHFFFAOYSA-M tetraphenylphosphanium;thiocyanate Chemical compound [S-]C#N.C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 GHPYAGKTTCKKDF-UHFFFAOYSA-M 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- QLAGHGSFXJZWKY-UHFFFAOYSA-N triphenylborane;triphenylphosphane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 QLAGHGSFXJZWKY-UHFFFAOYSA-N 0.000 description 1
- FIQMHBFVRAXMOP-UHFFFAOYSA-N triphenylphosphane oxide Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)(=O)C1=CC=CC=C1 FIQMHBFVRAXMOP-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
本発明は、固形の封止材用固形樹脂封止組成物と、それを用いた再配置ウエハー、半導体パッケージ、半導体パッケージの製造方法に関するものである。 The present invention relates to a solid resin sealing composition for a solid sealing material, a rearranged wafer using the same, a semiconductor package, and a method for manufacturing a semiconductor package.
近年の電子機器の小型化、軽量化、高集積化、高速動作化の動向を反映して、半導体パッケージに占める半導体チップの面積、体積は大きくなり、半導体パッケージ内の配線は微細化、短小化している。
従来、このような半導体チップを配線基板に電気的に接続する方法としては、半導体チップに突起電極(バンプ)を形成して、このバンプによって配線基板と一括接合するフリップチップ接続と呼ばれる実装方法がある。この方法では、例えば、半導体チップを小型化した場合、配線基板上の配線パターンも変更せねばならず、開発の際のタイムラグやコスト増につながり、多品種少量生産には向かなくなってしまう。
そこで、ウエハーレベルパッケージ(WLP)と呼ばれる、半導体回路の形成されたウエハーを個別の半導体チップに切断する前に、電気接続用のバンプを設け、ウエハー全体を封止する手法が考え出された(例えば、特許文献1参照)。
WLPでは配線基板を用いたフリップチップ接続が不要なため、多品種少量生産にも適する。しかしWLPでは、半導体パッケージの機能拡大と共に増大する単位面積あたりの実装用IO(入出力)バンプ数の上限が半導体チップの面積に比例し、小チップに機能を詰め込んだIO半導体チップには対応できない。
そこで、予め切断した半導体チップを支持体となるキャリア上に並べ、それをウエハー状に封止樹脂で封止した後(擬似ウエハー化)、半導体チップの回路面に再配線を行うことで、半導体チップのデザイン変更にも低コストで対応しつつ、半導体チップのサイズに対して過多なIO数にも対応できる技術が提案されている(例えば、特許文献2参照)。
ところが、このタイプのWLPでは、封止樹脂とキャリアとの熱膨張係数の差に起因する内部応力から、擬似ウエハーに反りが発生することにより、封止より後の工程での擬似ウエハーの吸着搬送が困難になり、生産性が低下することが問題となっている。
Reflecting the recent trend of downsizing, weight reduction, high integration, and high-speed operation of electronic devices, the area and volume of the semiconductor chip in the semiconductor package are increased, and the wiring in the semiconductor package is miniaturized and shortened. ing.
Conventionally, as a method of electrically connecting such a semiconductor chip to a wiring board, there is a mounting method called flip-chip connection in which bump electrodes are formed on the semiconductor chip and the bumps are collectively bonded to the wiring board by the bumps. is there. In this method, for example, when the semiconductor chip is downsized, the wiring pattern on the wiring board must be changed, leading to a time lag and cost increase during development, and not suitable for high-mix low-volume production.
Therefore, a method called a wafer level package (WLP) has been devised in which bumps for electrical connection are provided and the entire wafer is sealed before the wafer on which the semiconductor circuit is formed is cut into individual semiconductor chips. For example, see Patent Document 1).
Since WLP does not require flip-chip connection using a wiring board, it is suitable for high-mix low-volume production. However, in WLP, the upper limit of the number of mounting IO (input / output) bumps per unit area, which increases as the function of a semiconductor package increases, is proportional to the area of the semiconductor chip, and cannot support an IO semiconductor chip packed with functions in a small chip. .
Therefore, semiconductor chips that have been cut in advance are arranged on a carrier serving as a support, and after sealing them with a sealing resin in the form of a wafer (pseudo-wafering), rewiring is performed on the circuit surface of the semiconductor chip, thereby providing a semiconductor. There has been proposed a technology that can deal with an excessive number of I / Os with respect to the size of a semiconductor chip while dealing with chip design changes at low cost (see, for example, Patent Document 2).
However, in this type of WLP, the pseudo wafer is warped due to internal stress caused by the difference in thermal expansion coefficient between the sealing resin and the carrier. Has become a problem, and productivity is lowered.
本発明は、WLP(ウエハーレベルパッケージ)において生産性の低下を招く擬似ウエハーの反りを抑制した固形の封止材用固形樹脂組成物、及びこれを用いた再配置ウエハー、半導体パッケージ、その製造方法を提供するものである。 The present invention relates to a solid resin composition for a solid encapsulant that suppresses the warpage of a pseudo wafer that causes a decrease in productivity in WLP (wafer level package), a rearranged wafer using the same, a semiconductor package, and a method for manufacturing the same Is to provide.
本発明は、以下の通りである。
[1](A)エポキシ樹脂、(B)フェノール硬化剤、(C)マレイミド樹脂、(D)リン原子含有硬化促進剤、(E)充填材を含有する固形樹脂組成物であって、(A)+(B)+(C)の合計の質量のうち、(C)が30〜70質量%である封止材用固形樹脂組成物。
[2]前記(C)が少なくとも2つのマレイミド基を含み、飽和または不飽和の炭化水素基を有する[1]に記載の封止材用固形樹脂組成物。
[3]前記(C)が有する飽和または不飽和の炭化水素基の炭素数が8〜100である、[1]又は[2]に記載の封止材用固形樹脂組成物。
[4]前記(C)の飽和または不飽和の炭化水素基がマレイミド基に結合した構造を有する、[1]〜[3]のいずれか一項に記載の封止材用固形樹脂組成物。
[5]前記(C)が下記一般式(I)の構造を有する、[1]〜[4]のいずれか一項に記載の封止材用固形樹脂組成物。
The present invention is as follows.
[1] A solid resin composition containing (A) an epoxy resin, (B) a phenol curing agent, (C) a maleimide resin, (D) a phosphorus atom-containing curing accelerator, and (E) a filler, ) + (B) + (C) of the total mass of the solid resin composition for a sealing material, wherein (C) is 30 to 70% by mass.
[2] The solid resin composition for a sealing material according to [1], wherein (C) includes at least two maleimide groups and has a saturated or unsaturated hydrocarbon group.
[3] The solid resin composition for a sealing material according to [1] or [2], wherein the saturated or unsaturated hydrocarbon group (C) has 8 to 100 carbon atoms.
[4] The solid resin composition for a sealing material according to any one of [1] to [3], having a structure in which the saturated or unsaturated hydrocarbon group of (C) is bonded to a maleimide group.
[5] The solid resin composition for a sealing material according to any one of [1] to [4], wherein the (C) has a structure represented by the following general formula (I).
[6]前記(C)が下記一般式(II)で表される、[1]〜[5]のいずれか一項に記載の封止材用固形樹脂組成物。
[6] The solid resin composition for a sealing material according to any one of [1] to [5], wherein (C) is represented by the following general formula (II).
[7][1]〜[6]のいずれか一項に記載の封止用樹脂組成物を用いて、半導体チップを支持体に多数個配置し、封止した再配置ウエハー。
[8][1]〜[6]のいずれか一項に記載の封止材用固形樹脂組成物を用いて、半導体チップを支持体に多数個配置し(圧縮成形により)封止した再配置ウエハー。
[9][7]または[8]に記載の再配置ウエハーを個片化した半導体パッケージ。
[10][1]〜[6]のいずれか一項に記載の封止材用固形樹脂組成物を用いて作製される半導体パッケージの製造方法であって、半導体チップを支持体に多数個配置する工程、この上に前記固形の封止材用固形樹脂組成物を散布する工程、金型により成形する工程、を含む半導体パッケージの製造方法。
[7] A rearranged wafer in which a large number of semiconductor chips are arranged on a support and sealed using the sealing resin composition according to any one of [1] to [6].
[8] Relocation in which a large number of semiconductor chips are arranged on a support (by compression molding) and sealed using the solid resin composition for a sealing material according to any one of [1] to [6] Wafer.
[9] A semiconductor package obtained by separating the rearranged wafer according to [7] or [8].
[10] A method for manufacturing a semiconductor package produced using the solid resin composition for a sealing material according to any one of [1] to [6], wherein a plurality of semiconductor chips are arranged on a support. The manufacturing method of a semiconductor package including the process to carry out, the process of sprinkling the solid resin composition for solid sealing materials on this, the process of shape | molding with a metal mold | die.
本発明により、WLP(ウエハーレベルパッケージ)において生産性の低下を招く擬似ウエハーの反りを抑制した固形の封止材用固形樹脂組成物、及びこれを用いた再配置ウエハー、半導体パッケージ、その製造方法を提供することができる。 INDUSTRIAL APPLICABILITY According to the present invention, a solid resin composition for a solid encapsulant that suppresses warpage of a pseudo wafer that causes a decrease in productivity in WLP (wafer level package), a rearranged wafer using the same, a semiconductor package, and a manufacturing method thereof Can be provided.
本明細書において「工程」との語は、独立した工程だけではなく、他の工程と明確に区別できない場合であってもその工程の所期の目的が達成されれば、本用語に含まれる。また本明細書において「〜」を用いて示された数値範囲は、「〜」の前後に記載される数値をそれぞれ最小値及び最大値として含む範囲を示す。更に本明細書において組成物中の各成分の含有量は、組成物中に各成分に該当する物質が複数存在する場合、特に断らない限り、組成物中に存在する当該複数の物質の合計量を意味する。 In this specification, the term “process” is not limited to an independent process, and is included in the term if the intended purpose of the process is achieved even when it cannot be clearly distinguished from other processes. . In the present specification, numerical ranges indicated using “to” indicate ranges including the numerical values described before and after “to” as the minimum value and the maximum value, respectively. Further, in the present specification, the content of each component in the composition is the total amount of the plurality of substances present in the composition unless there is a specific notice when there are a plurality of substances corresponding to each component in the composition. Means.
本発明は、(A)エポキシ樹脂、(B)フェノール硬化剤、(C)マレイミド樹脂、(D)リン原子含有硬化促進剤、(E)充填材を含有する固形樹脂組成物であって、(A)+(B)+(C)の合計の質量のうち、(C)が30〜70質量%である封止材用固形樹脂組成物、およびこれを用いた再配置ウエハー、半導体パッケージとその製造方法である。本発明の封止材用固形樹脂組成物は電子部品の封止用途等に用いることができる。
以下、本発明を詳細に説明する。
The present invention is a solid resin composition comprising (A) an epoxy resin, (B) a phenol curing agent, (C) a maleimide resin, (D) a phosphorus atom-containing curing accelerator, (E) a filler, (A) Of the total mass of (B) + (C), (C) is a solid resin composition for encapsulant having a content of 30 to 70% by mass, and a rearranged wafer, a semiconductor package and the like using the same It is a manufacturing method. The solid resin composition for a sealing material of the present invention can be used for sealing electronic parts.
Hereinafter, the present invention will be described in detail.
<(A)エポキシ樹脂>
本発明で用いる(A)エポキシ樹脂としては、一分子中にエポキシ基を2個以上有し、常温(本発明では15〜35℃を常温と定義する)における性状は問わず、分子量や構造も限定されない。例えば、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂等のノボラック型エポキシ樹脂、ビスフェノールA・F型エポキシ樹脂、N,N−ジグリシジルアニリン、N,N−ジグリシジルトルイジン、ジアミノジフェニルメタン型グリシジルアミン、アミノフェノール型グリシジルアミンのような芳香族グリシジル型エポキシ樹脂、ハイドロキノン型エポキシ樹脂、ビフェニル型エポキシ樹脂、スチルベン型エポキシ樹脂、トリフェノールメタン型エポキシ樹脂、トリフェノールプロパン型エポキシ樹脂、アルキル変性トリフェノールメタン型エポキシ樹脂、ナフトール型エポキシ樹脂、ナフタレン型エポキシ樹脂、フェニレンおよび/またはビフェニレン骨格を有するフェノールアラルキル型エポキシ樹脂、フェニレンおよび/またはビフェニレン骨格を有するナフトールアラルキル型エポキシ樹脂等のアラルキル型エポキシ樹脂などのエポキシ樹脂、ビニルシクロヘキセンジオキシド、ジシクロペンタジエンオキシド、アリサイクリックジエポキシ−アジペイド等の脂環式エポキシなどの脂肪族エポキシ樹脂などが挙げられる。
本発明では、反り低減の観点から、低弾性化に有効なトリフェノールメタン型エポキシ樹脂、トリフェノールプロパン型エポキシ樹脂が好ましく、機械特性の観点からビフェニル型エポキシ樹脂を適用することが好ましい。これらは単独でも、2種以上を組み合わせて使用しても良い。
<(A) Epoxy resin>
The epoxy resin (A) used in the present invention has two or more epoxy groups in one molecule, regardless of properties at normal temperature (15 to 35 ° C. is defined as normal temperature in the present invention), molecular weight and structure are also included. It is not limited. For example, novolak type epoxy resins such as phenol novolac type epoxy resin and cresol novolak type epoxy resin, bisphenol A / F type epoxy resin, N, N-diglycidylaniline, N, N-diglycidyltoluidine, diaminodiphenylmethane type glycidylamine, Aromatic glycidyl type epoxy resin such as aminophenol type glycidylamine, hydroquinone type epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, triphenolpropane type epoxy resin, alkyl-modified triphenolmethane type Epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, phenol aralkyl type epoxy resin having phenylene and / or biphenylene skeleton, Fatty substances such as epoxy resins such as aralkyl type epoxy resins such as naphthol aralkyl type epoxy resins having a nylene and / or biphenylene skeleton, and alicyclic epoxies such as vinylcyclohexene dioxide, dicyclopentadiene oxide, and alicyclic diepoxy-adipade Group epoxy resin.
In the present invention, a triphenolmethane type epoxy resin and a triphenolpropane type epoxy resin effective for lowering the elasticity are preferable from the viewpoint of reducing warpage, and biphenyl type epoxy resin is preferably applied from the viewpoint of mechanical properties. These may be used alone or in combination of two or more.
<(B)フェノール硬化剤>
本発明で用いる(B)フェノール硬化剤としては、一分子中にフェノール性水酸基を2個以上有し、常温(本発明では15〜35℃を常温と定義する)における性状は問わず、分子量や構造も限定されない。例えば、フェノールノボラック型樹脂、クレゾールノボラック型樹脂等のノボラック型樹脂、ビスフェノールA・F型フェノール樹脂、ハイドロキノン型フェノール樹脂、ビフェニル型フェノール樹脂、スチルベン型フェノール樹脂、トリフェノールメタン型フェノール樹脂、トリフェノールプロパン型フェノール樹脂、アルキル変性トリフェノールメタン型フェノール樹脂、ナフトール型フェノール樹脂、ナフタレン型フェノール樹脂、フェニレンおよび/またはビフェニレン骨格を有するフェノールアラルキル型フェノール脂、フェニレンおよび/またはビフェニレン骨格を有するナフトールアラルキル型樹脂等のアラルキル型フェノール樹脂、ジシクロペンタジエン等の脂環式フェノール樹脂等の脂肪族フェノール樹脂などが挙げられる。
本発明では、反り低減の観点から、低弾性化に有効なトリフェノールメタン型フェノール樹脂、トリフェノールプロパン型フェノール樹脂が好ましく、機械特性の観点からフェニレンおよび/またはビフェニレン骨格を有するナフトールアラルキル型フェノール樹脂等のアラルキル型フェノール樹脂を適用することが好ましい。これらは単独でも、2種以上を組み合わせて使用しても良い。
フェノール硬化剤の配合量は、エポキシ樹脂/フェノール硬化剤の当量比が0.7〜1.5である範囲が好ましく、0.8〜1.2である範囲がより好ましく、0.9〜1.1である範囲が更に好ましい。上記範囲外である場合、組成物の硬化性、耐湿信頼性、生産性、作業性が低下する恐れがある。
<(B) Phenol curing agent>
The (B) phenol curing agent used in the present invention has two or more phenolic hydroxyl groups in one molecule, regardless of properties at room temperature (15 to 35 ° C. is defined as room temperature in the present invention), molecular weight, The structure is not limited. For example, novolac resins such as phenol novolac resins, cresol novolac resins, bisphenol A / F phenol resins, hydroquinone phenol resins, biphenyl phenol resins, stilbene phenol resins, triphenolmethane phenol resins, triphenolpropane Type phenol resin, alkyl-modified triphenol methane type phenol resin, naphthol type phenol resin, naphthalene type phenol resin, phenol aralkyl type phenol fat having phenylene and / or biphenylene skeleton, naphthol aralkyl type resin having phenylene and / or biphenylene skeleton, etc. Aralkyl-type phenolic resins, and aliphatic phenolic resins such as alicyclic phenolic resins such as dicyclopentadiene. .
In the present invention, a triphenolmethane type phenol resin and a triphenolpropane type phenol resin effective for lowering the elasticity are preferable from the viewpoint of warpage reduction, and a naphthol aralkyl type phenol resin having a phenylene and / or biphenylene skeleton from the viewpoint of mechanical properties. It is preferable to apply an aralkyl type phenol resin such as These may be used alone or in combination of two or more.
The blending amount of the phenol curing agent is preferably in a range where the equivalent ratio of epoxy resin / phenol curing agent is 0.7 to 1.5, more preferably in a range of 0.8 to 1.2, and 0.9 to 1 A range of .1 is more preferred. When it is out of the above range, the curability, moisture resistance reliability, productivity and workability of the composition may be lowered.
<(C)マレイミド樹脂>
本発明で用いる(C)マレイミド樹脂は、少なくとも2つのマレイミド基を有し、飽和または不飽和の炭化水素基を有するマレイミド樹脂が好ましい。更に、下記一般式(I)で表される化合物であるとより好ましい。マレイミド基は芳香環に結合していても脂肪族鎖に結合していても良い。また、飽和または不飽和の炭化水素基の炭素数は8〜100であることが好ましく、炭素数8〜50がより好ましく、8〜40であることが更に好ましい。マレイミド樹脂に含有される炭化水素基は直鎖状、分岐状、環状のいずれの構造であってもよく、脂肪族の脂環式骨格及び芳香族の骨格を含有していても良い。反りの観点から、マレイミド樹脂の配合量は(A)エポキシ樹脂、(B)フェノール硬化剤、(C)マレイミド樹脂の合計質量に対して30〜70質量%である。
<(C) Maleimide resin>
The maleimide resin (C) used in the present invention is preferably a maleimide resin having at least two maleimide groups and a saturated or unsaturated hydrocarbon group. Furthermore, it is more preferable that it is a compound represented by the following general formula (I). The maleimide group may be bonded to an aromatic ring or an aliphatic chain. In addition, the saturated or unsaturated hydrocarbon group preferably has 8 to 100 carbon atoms, more preferably 8 to 50 carbon atoms, and still more preferably 8 to 40 carbon atoms. The hydrocarbon group contained in the maleimide resin may have a linear, branched, or cyclic structure, and may contain an aliphatic alicyclic skeleton and an aromatic skeleton. From the viewpoint of warpage, the compounding amount of the maleimide resin is 30 to 70% by mass with respect to the total mass of the (A) epoxy resin, (B) phenol curing agent, and (C) maleimide resin.
本発明で用いる(C)マレイミド樹脂は、少なくとも2つのマレイミド基を有し、飽和または不飽和の炭化水素基を有する下記一般式(II)で表される化合物であると好ましい。 The (C) maleimide resin used in the present invention is preferably a compound represented by the following general formula (II) having at least two maleimide groups and having a saturated or unsaturated hydrocarbon group.
一般式(I)又は一般式(II)で表される化合物は、長鎖アルキルビスマレイミド樹脂である。
The compound represented by general formula (I) or general formula (II) is a long-chain alkyl bismaleimide resin.
長鎖アルキルビスマレイミド樹脂は、アルキレン鎖中に側鎖を有する長鎖アルキルビスマレイミド樹脂であり、好ましくは炭素数10以上のアルキレン鎖を含む主鎖と、アルキレン鎖に結合したアルキル基を含む側鎖とを有している。長鎖アルキルビスマレイミド樹脂は、一分子中に2箇所以上のマレイミドによる熱硬化部と、アルキレン鎖による柔軟性発現部を有している。マレイミド基は、芳香環に結合していても、脂肪族鎖に結合していてもよいが、脂肪族鎖に結合していることが好ましい。
長鎖アルキルビスマレイミド樹脂を構成する主鎖は、好ましくは炭素数10〜102のアルキレン鎖を含むことが好ましく、炭素数12〜52のアルキレン鎖を含むことがより好ましく、炭素数14〜22のアルキレン鎖を含むことが更に好ましい。また、側鎖は、炭素数2〜50のアルキル基を含むことが好ましく、炭素数3〜25のアルキル基を含むことがより好ましく、炭素数4〜10のアルキル基を含むことが更に好ましい。
(C)成分の分子量は特に限定されない。取扱性の観点から(C)成分の重量平均分子量(Mw)の下限値は、500以上、1000以上、1500以上又は1700であってもよい。また、流動性の観点から(C)成分のMwの上限値は、10000以下、9000以下、7000以下又は5000以下であってもよい。取扱性、流動性及び埋め込み性の観点より(C)成分のMwは、500〜10000であることが好ましく、1000〜9000であることがより好ましく、1500〜9000であることが更に好ましく、1500〜7000であることがより特に好ましく、1700〜5000であることが極めて好ましい。
(C)成分のMwは、ゲルパーミエーションクロマトグラフィー(GPC)法により測定することができる。詳細なGPC条件は下記のとおりである。
ポンプ:L−6200型[株式会社日立ハイテクノロジーズ製]
検出器:L−3300型RI[株式会社日立ハイテクノロジーズ製]
カラムオーブン:L−655A−52[株式会社日立ハイテクノロジーズ製]
ガードカラム及びカラム:TSK Guardcolumn HHR−L+TSKgel G4000HHR+TSKgel G2000HHR[すべて東ソー株式会社製、商品名]
カラムサイズ:6.0×40mm(ガードカラム)、7.8×300mm(カラム)
溶離液:テトラヒドロフラン
試料濃度:30mg/5mL
注入量:20μL
流量:1.00mL/分
測定温度:40℃
The long-chain alkyl bismaleimide resin is a long-chain alkyl bismaleimide resin having a side chain in an alkylene chain, preferably a main chain containing an alkylene chain having 10 or more carbon atoms and a side containing an alkyl group bonded to the alkylene chain. And has a chain. The long-chain alkyl bismaleimide resin has a thermosetting portion with two or more maleimides in one molecule and a flexible expression portion with an alkylene chain. The maleimide group may be bonded to an aromatic ring or an aliphatic chain, but is preferably bonded to an aliphatic chain.
The main chain constituting the long chain alkyl bismaleimide resin preferably includes an alkylene chain having 10 to 102 carbon atoms, more preferably includes an alkylene chain having 12 to 52 carbon atoms, and has 14 to 22 carbon atoms. More preferably, it contains an alkylene chain. The side chain preferably contains an alkyl group having 2 to 50 carbon atoms, more preferably contains an alkyl group having 3 to 25 carbon atoms, and further preferably contains an alkyl group having 4 to 10 carbon atoms.
The molecular weight of the component (C) is not particularly limited. From the viewpoint of handleability, the lower limit of the weight average molecular weight (Mw) of the component (C) may be 500 or more, 1000 or more, 1500 or more, or 1700. Moreover, 10,000 or less, 9000 or less, 7000 or less, or 5000 or less may be sufficient as the upper limit of Mw of (C) component from a fluid viewpoint. From the viewpoint of handleability, fluidity and embedding property, Mw of component (C) is preferably 500 to 10,000, more preferably 1000 to 9000, still more preferably 1500 to 9000, and 1500 to More preferably, it is 7000, and it is very preferable that it is 1700-5000.
(C) Mw of a component can be measured by a gel permeation chromatography (GPC) method. Detailed GPC conditions are as follows.
Pump: L-6200 [manufactured by Hitachi High-Technologies Corporation]
Detector: L-3300 RI [manufactured by Hitachi High-Technologies Corporation]
Column oven: L-655A-52 [manufactured by Hitachi High-Technologies Corporation]
Guard column and column: TSK Guardcolumn HHR-L + TSKgel G4000HHR + TSKgel G2000HHR [All trade names, manufactured by Tosoh Corporation]
Column size: 6.0 × 40 mm (guard column), 7.8 × 300 mm (column)
Eluent: Tetrahydrofuran Sample concentration: 30 mg / 5 mL
Injection volume: 20 μL
Flow rate: 1.00 mL / min Measurement temperature: 40 ° C
(C)成分を製造する方法は限定されない。(C)成分は、例えば、酸無水物とジアミンとを反応させてアミン末端化合物を合成した後、該アミン末端化合物を過剰の無水マレイン酸と反応させることで作製することができる。
酸無水物としては、無水ピロメリット酸が挙げられる。
ジアミンとしては、アミノ基に挟まれる構造(c)[H2N−構造(c)−NH2]は特に限定されず、直鎖状、分岐状、環状のいずれであってもよい。また、飽和又は不飽和の2価の炭化水素基の炭素数は、8〜100であってもよい。構造(c)は、炭素数8〜100の分岐を有していてもよいアルキレン基であることが好ましく、炭素数10〜70の分岐を有していてもよいアルキレン基であるとより好ましく、炭素数15〜50の分岐を有していてもよいアルキレン基であると更に好ましい。(C)成分が構造(c)を有することで、本実施形態に係る樹脂組成物の可とう性が向上し、樹脂組成物から作製される樹脂フィルムの取扱性(タック性、割れ、粉落ち等)及び強度を高めることが可能である。また、上記の炭素数を有する構造(c)は、分子構造を三次元化し易く、ポリマーの自由体積を増大させて低密度化できるため好ましい。
The method for producing the component (C) is not limited. The component (C) can be produced, for example, by reacting an acid anhydride and a diamine to synthesize an amine-terminated compound, and then reacting the amine-terminated compound with an excess of maleic anhydride.
An example of the acid anhydride is pyromellitic anhydride.
As the diamine, the structure (c) [H 2 N-structure (c) -NH 2 ] sandwiched between amino groups is not particularly limited, and may be linear, branched, or cyclic. Moreover, 8-100 may be sufficient as carbon number of a saturated or unsaturated divalent hydrocarbon group. The structure (c) is preferably an alkylene group which may have a branch having 8 to 100 carbon atoms, more preferably an alkylene group which may have a branch having 10 to 70 carbon atoms, More preferably, it is an alkylene group which may have a branch having 15 to 50 carbon atoms. (C) The component has the structure (c), thereby improving the flexibility of the resin composition according to the present embodiment, and handling properties of the resin film produced from the resin composition (tackiness, cracking, powder falling off). Etc.) and strength can be increased. The structure (c) having the above carbon number is preferable because the molecular structure can be easily made three-dimensional and the free volume of the polymer can be increased to reduce the density.
構造(c)としては、例えば、ノニレン基、デシレン基、ウンデシレン基、ドデシレン基、テトラデシレン基、ヘキサデシレン基、オクタデシレン基、ノナデシレン基等のアルキレン基;ベンジレン基、フェニレン基、ナフチレン基等のアリーレン基;フェニレンメチレン基、フェニレンエチレン基、ベンジルプロピレン基、ナフチレンメチレン基、ナフチレンエチレン基等のアリーレンアルキレン基;フェニレンジメチレン基、フェニレンジエチレン基等のアリーレンジアルキレン基などが挙げられる。
低熱膨張特性、導体との接着性、耐熱性及び低吸湿性の観点から、構造(c)として下記式(III)で表される基が特に好ましい。
As the structure (c), for example, an alkylene group such as a nonylene group, a decylene group, an undecylene group, a dodecylene group, a tetradecylene group, a hexadecylene group, an octadecylene group or a nonadecylene group; an arylene group such as a benzylene group, a phenylene group or a naphthylene group; Examples include arylene alkylene groups such as phenylenemethylene group, phenyleneethylene group, benzylpropylene group, naphthylenemethylene group, and naphthyleneethylene group; and arylenealkylene groups such as phenylenedimethylene group and phenylenediethylene group.
A group represented by the following formula (III) is particularly preferable as the structure (c) from the viewpoints of low thermal expansion characteristics, adhesion to a conductor, heat resistance, and low hygroscopicity.
式(III)中、R4は炭素数4〜50のアルキル基を示す。柔軟性の更なる向上及び合成容易性の観点から、R4は炭素数5〜25のアルキル基であることが好ましく、炭素数6〜10のアルキル基であることがより好ましく、炭素数7〜10のアルキル基であることが更に好ましい。
式(III)中、R5は炭素数2〜50のアルキル基を示す。柔軟性の更なる向上及び合成容易性の観点から、R5は炭素数3〜25のアルキル基であることが好ましく、炭素数4〜10のアルキル基であることがより好ましく、炭素数5〜8のアルキル基であることが更に好ましい。
流動性及び回路埋め込み性の観点からは、構造(c)は(C)成分中に複数存在すると好ましい。その場合、構造(c)はそれぞれ同一であってもよく、異なっていてもよい。例えば、(C)成分中に2〜40の構造(c)が存在することが好ましく、2〜20の構造(c)が存在することがより好ましく、一分子中に2〜10の構造(c)が存在することが更に好ましい。
In formula (III), R 4 represents an alkyl group having 4 to 50 carbon atoms. From the viewpoint of further improving flexibility and ease of synthesis, R 4 is preferably an alkyl group having 5 to 25 carbon atoms, more preferably an alkyl group having 6 to 10 carbon atoms, and 7 to 7 carbon atoms. More preferably, it is 10 alkyl groups.
In formula (III), R 5 represents an alkyl group having 2 to 50 carbon atoms. From the viewpoint of further improvement in flexibility and ease of synthesis, R 5 is preferably an alkyl group having 3 to 25 carbon atoms, more preferably an alkyl group having 4 to 10 carbon atoms, and 5 to 5 carbon atoms. More preferably, it is an alkyl group of 8.
From the viewpoint of fluidity and circuit embedding properties, it is preferable that a plurality of structures (c) exist in the component (C). In that case, the structures (c) may be the same or different. For example, 2 to 40 structures (c) are preferably present in component (C), more preferably 2 to 20 structures (c) are present, and 2 to 10 structures (c) per molecule. More preferably,
ジアミンとして、例えば、ダイマージアミン、2,2−ビス(4−(4−アミノフェノキシ)フェニル)プロパン、1,3−ビス(4−アミノフェノキシ)ベンゼン、4,4´−ビス(4−アミノフェノキシ)ビフェニル、4,4´−ジアミノ−3,3´−ジヒドロキシビフェニル、4,4´−ジアミノ−3,3´―ジメチルビフェニル、1,3−ビス[2−(4−アミノフェニル)−2−プロピル]ベンゼン、1,4−ビス[2−(4−アミノフェニル)−2−プロピル]ベンゼン、ポリオキシアルキレンジアミン、[3,4−ビス(1−アミノヘプチル)−6−ヘキシル−5−(1−オクテニル)]シクロヘキセン等が挙げられる。これらは目的、用途等に合わせて、1種類を単独で用いても、2種類以上を併用してもよい。 Examples of the diamine include dimer diamine, 2,2-bis (4- (4-aminophenoxy) phenyl) propane, 1,3-bis (4-aminophenoxy) benzene, and 4,4′-bis (4-aminophenoxy). ) Biphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, 4,4'-diamino-3,3'-dimethylbiphenyl, 1,3-bis [2- (4-aminophenyl) -2- Propyl] benzene, 1,4-bis [2- (4-aminophenyl) -2-propyl] benzene, polyoxyalkylenediamine, [3,4-bis (1-aminoheptyl) -6-hexyl-5- ( 1-octenyl)] cyclohexene and the like. These may be used alone or in combination of two or more according to the purpose and application.
(C)成分としては市販されている化合物を使用することもできる。市販されている化合物としては、例えば、Designer Molecules Inc.製の製品が挙げられ、具体的には、BMI−1500、BMI−1700、BMI−3000、BMI−5000、BMI−9000(いずれも商品名)等が挙げられる。より良好な柔軟性を得る観点から、(C)成分としてBMI−3000を使用することがより好ましい。 As the component (C), a commercially available compound can also be used. As a commercially available compound, for example, Designer Molecules Inc. Specific examples include BMI-1500, BMI-1700, BMI-3000, BMI-5000, BMI-9000 (all are trade names), and the like. From the viewpoint of obtaining better flexibility, it is more preferable to use BMI-3000 as the component (C).
<(D)リン原子含有硬化促進剤>
本発明で用いる硬化促進剤はリン原子を含み、リン原子に結合する置換基は特に限定されない。リン原子を含まない硬化促進剤として、イミダゾール類が挙げられるが、イミダゾール類はエポキシ同士の縮合反応を促進する効果が高く、硬化剤が未反応で残りやすい。そのため、リン原子含有の硬化促進剤に比べて信頼性に劣る傾向があるが、不具合が生じない範囲であればイミダゾール類も適用してよい。硬化促進剤の配合量は、エポキシ樹脂、フェノール硬化剤、マレイミド樹脂の合計質量を100として換算した場合、硬化性、保存安定性の観点から0.3〜5質量部が好ましく、0.5〜4質量部がより好ましく、0.7〜3質量部が更に好ましい。
リン原子を含む硬化促進剤としては、テトラブチルホスホニウム−カルボキシレート、テトラフェニルホスホニウム−フタル酸塩、テトラフェニルホスホニウム−ラウリン酸塩、トリフェニルホスフィン、トリ−p−トリルホスフィン、ジフェニルシクロヘキシルホスフィン、トリシクロヘキシルホスフィン、1,4−ビスジフェニルホスフィノブタン、テトラフェニルホスホニウムテトラ−p−トリルボレート、テトラフェニルホスホニウムテトラフェニルボレート、トリフェニルホスフィントリフェニルボラン、テトラフェニルホスホニウムチオシアネート、テトラフェニルホスホニウムジシアナミド、n−ブチルトリフェニルホスホニウムジシアナミド、テトラブチルホスホニウムデカン酸塩、トリフェニルホスフィンオキサイド、ジフェニルホスフィニルハイドロキノン等が挙げられる。
<(D) Phosphorus atom-containing curing accelerator>
The curing accelerator used in the present invention contains a phosphorus atom, and the substituent bonded to the phosphorus atom is not particularly limited. Examples of the curing accelerator that does not contain a phosphorus atom include imidazoles, but imidazoles are highly effective in promoting the condensation reaction between epoxies, and the curing agent is likely to remain unreacted. Therefore, although there exists a tendency for it to be inferior to reliability compared with a phosphorus atom containing hardening accelerator, imidazoles may also be applied if it does not cause a problem. The blending amount of the curing accelerator is preferably 0.3 to 5 parts by mass from the viewpoint of curability and storage stability, when the total mass of the epoxy resin, the phenol curing agent and the maleimide resin is converted to 100. 4 mass parts is more preferable, and 0.7-3 mass parts is still more preferable.
Curing accelerators containing phosphorus atoms include tetrabutylphosphonium-carboxylate, tetraphenylphosphonium-phthalate, tetraphenylphosphonium-laurate, triphenylphosphine, tri-p-tolylphosphine, diphenylcyclohexylphosphine, tricyclohexyl. Phosphine, 1,4-bisdiphenylphosphinobutane, tetraphenylphosphonium tetra-p-tolylborate, tetraphenylphosphonium tetraphenylborate, triphenylphosphinetriphenylborane, tetraphenylphosphonium thiocyanate, tetraphenylphosphonium dicyanamide, n-butyl Triphenylphosphonium dicyanamide, tetrabutylphosphonium decanoate, triphenylphosphine oxide, di E sulfonyl phosphinyl hydroquinone and the like.
<(E)充填材>
本発明で用いる充填材は封止材で一般的に用いられるものであれば特に限定されない。流動性の観点から、充填材の形状は角形より球状であることが好ましい。充填材としては、溶融シリカ、結晶シリカ、ガラス、アルミナ、炭酸カルシウム、ケイ酸ジルコニウム、ケイ酸カルシウム、窒化珪素、窒化アルミニウム、窒化ホウ素、ベリリア、ジルコニア、ジルコン、フォステライト、ステアタイト、スピネル、ムライト、チタニア、タルク、クレー、マイカ等の粒子;これらを球形化したビーズなどが挙げられる。
充填材の平均粒子径は、1μm〜50μmが好ましく、3μm〜30μmがより好ましい。無機充填材の平均粒子径が1μm以上であると、樹脂組成物の粘度の上昇が抑えられやすく、50μm以下であると、樹脂組成物と充填材との混合性が向上し、硬化によって得られるパッケージが均質化する傾向があり、特性のばらつきが抑えられ、狭い領域への充填性が向上する傾向がある。
また凝集を抑制するために1μm以下の小粒径の充填材を併用しても良い。充填材の配合量は、流動性及び信頼性の観点から充填材を除く成分に対して、65〜90体積%が好ましく、70〜88体積%がより好ましく、75〜85体積%であることが更に好ましい。
<(E) Filler>
The filler used in the present invention is not particularly limited as long as it is generally used as a sealing material. From the viewpoint of fluidity, the shape of the filler is preferably spherical rather than square. As fillers, fused silica, crystalline silica, glass, alumina, calcium carbonate, zirconium silicate, calcium silicate, silicon nitride, aluminum nitride, boron nitride, beryllia, zirconia, zircon, fosterite, steatite, spinel, mullite , Titania, talc, clay, mica and the like; beads formed by spheroidizing them.
The average particle diameter of the filler is preferably 1 μm to 50 μm, and more preferably 3 μm to 30 μm. When the average particle size of the inorganic filler is 1 μm or more, an increase in the viscosity of the resin composition is easily suppressed, and when it is 50 μm or less, the mixing property between the resin composition and the filler is improved and obtained by curing. There is a tendency that the package is homogenized, variation in characteristics is suppressed, and filling property in a narrow region tends to be improved.
In order to suppress aggregation, a filler having a small particle size of 1 μm or less may be used in combination. The blending amount of the filler is preferably 65 to 90% by volume, more preferably 70 to 88% by volume, and 75 to 85% by volume with respect to the components excluding the filler from the viewpoint of fluidity and reliability. Further preferred.
<エラストマー>
本発明の封止材用固形樹脂組成物は、必要に応じて応力緩和剤として、シリコーンオイル、シリコーンゴム粒子等の応力緩和剤を含有してもよい。応力緩和剤を含有させることによって、パッケージの反り変形量及びパッケージクラックを低減させることが可能である。使用可能な応力緩和剤としては、当該技術分野で一般に用いられる公知の可とう剤(応力緩和剤)を適宜選択して使用することができる。
一般に、使用されている可とう剤としては、シリコーン、ポリスチレン、ポリオレフィン、ポリウレタン、ポリエステル、ポリエーテル、ポリアミド、ポリブタジエン等の熱可塑性エラストマー、NR(天然ゴム)、NBR(アクリロニトリル−ブタジエンゴム)、アクリルゴム、ウレタンゴム、シリコーンパウダー等のゴム粒子;メタクリル酸メチル−スチレン−ブタジエン共重合体(MBS)、メタクリル酸メチル−シリコーン共重合体、メタクリル酸メチル−アクリル酸ブチル共重合体等のコア−シェル構造を有するゴム粒子;などが挙げられる。応力緩和剤は、1種を単独で用いても2種以上組み合わせて用いてもよい。なかでも、シリコーン系可とう剤が好ましく、シリコーン系可とう剤としては、エポキシ基を有するもの、アミノ基を有するもの、これらをポリエーテル変性したもの等が挙げられる。
<Elastomer>
The solid resin composition for a sealing material of the present invention may contain a stress relaxation agent such as silicone oil or silicone rubber particles as a stress relaxation agent as necessary. By containing a stress relaxation agent, it is possible to reduce the amount of warpage deformation and package cracks of the package. As a usable stress relaxation agent, a known flexible agent (stress relaxation agent) generally used in the technical field can be appropriately selected and used.
In general, the flexible agents used are thermoplastic elastomers such as silicone, polystyrene, polyolefin, polyurethane, polyester, polyether, polyamide, polybutadiene, NR (natural rubber), NBR (acrylonitrile-butadiene rubber), and acrylic rubber. Rubber particles such as urethane rubber and silicone powder; Core-shell structures such as methyl methacrylate-styrene-butadiene copolymer (MBS), methyl methacrylate-silicone copolymer, methyl methacrylate-butyl acrylate copolymer And the like. A stress relaxation agent may be used individually by 1 type, or may be used in combination of 2 or more type. Among these, silicone-based flexible agents are preferable, and examples of the silicone-based flexible agents include those having an epoxy group, those having an amino group, and those obtained by modifying these with a polyether.
<カップリング剤>
本発明の封止材用固形樹脂組成物は、必要に応じて、樹脂成分と充填材との接着性を高める観点から、カップリング剤を含有してもよい。カップリング剤の種類は、特に限定されない。カップリング剤としては、エポキシシラン、メルカプトシラン、アミノシラン、アルキルシラン、ウレイドシラン、ビニルシラン等の各種シラン化合物、チタン化合物、アルミニウムキレート化合物、アルミニウム及びジルコニウム含有化合物などの公知のカップリング剤が挙げられる。これらのカップリング剤は、1種を単独で用いても2種以上を組み合わせて用いてもよい。
封止材用固形樹脂組成物がカップリング剤を含有する場合、カップリング剤の含有率は、(E)充填材に対して0.05質量%〜5質量%であることが好ましく、0.1質量%〜2.5質量%がより好ましい。0.05質量%以上であると充填材等との接着性が向上する傾向があり、5質量%以下であるとパッケージの成形性に優れる傾向がある。
<Coupling agent>
The solid resin composition for a sealing material of the present invention may contain a coupling agent as needed from the viewpoint of enhancing the adhesion between the resin component and the filler. The type of coupling agent is not particularly limited. As the coupling agent, known coupling agents such as various silane compounds such as epoxy silane, mercapto silane, amino silane, alkyl silane, ureido silane, vinyl silane, titanium compound, aluminum chelate compound, aluminum and zirconium-containing compound may be mentioned. These coupling agents may be used alone or in combination of two or more.
When the solid resin composition for sealing materials contains a coupling agent, it is preferable that the content rate of a coupling agent is 0.05 mass%-5 mass% with respect to (E) filler. 1 mass%-2.5 mass% is more preferable. If it is 0.05% by mass or more, the adhesion to a filler or the like tends to be improved, and if it is 5% by mass or less, the moldability of the package tends to be excellent.
<その他添加剤>
<難燃剤>
本発明の封止材用固形樹脂組成物は、難燃性を付与するために、必要に応じて難燃剤を含有してもよい。難燃剤の種類は特に制限されない。具体的に、難燃剤としては、ハロゲン原子、アンチモン原子、窒素原子又はリン原子を含む公知の有機化合物又は無機化合物、金属水酸化物、アセナフチレン等が挙げられる。難燃剤は、1種を単独で用いても2種以上を組み合わせて用いてもよい。
難燃剤の含有率は、難燃効果が達成されれば特に制限はない。封止材用固形樹脂組成物が難燃剤を含有する場合、難燃剤の含有率は、(A)エポキシ樹脂に対して、1質量%〜30質量%が好ましく、2質量%〜15質量%がより好ましい。
<Other additives>
<Flame Retardant>
The solid resin composition for a sealing material of the present invention may contain a flame retardant as necessary in order to impart flame retardancy. The type of flame retardant is not particularly limited. Specifically, examples of the flame retardant include known organic compounds or inorganic compounds containing a halogen atom, an antimony atom, a nitrogen atom, or a phosphorus atom, a metal hydroxide, and acenaphthylene. A flame retardant may be used individually by 1 type, or may be used in combination of 2 or more type.
The content of the flame retardant is not particularly limited as long as the flame retardant effect is achieved. When the solid resin composition for sealing materials contains a flame retardant, the content of the flame retardant is preferably 1% by mass to 30% by mass and 2% by mass to 15% by mass with respect to (A) the epoxy resin. More preferred.
<陰イオン交換体>
本発明の封止材用固形樹脂組成物には、必要に応じて陰イオン交換体を含有してもよい。特に、エポキシ樹脂組成物を封止用成形材料として用いる場合には、封止される素子を備える電子部品装置の耐湿性及び高温放置特性を向上させる観点から、陰イオン交換体を含有させることが好ましい。
陰イオン交換体としては特に制限はなく、従来から当該技術分野において一般に使用されるものが挙げられる。陰イオン交換体としては、下記一般式(IV)で示されるようなハイドロサルタイト化合物;マグネシウム、アルミニウム、チタン、ジルコニウム及びビスマスから選ばれる元素の含水酸化物;等が挙げられる。陰イオン交換体は、1種を単独で又は2種以上を組み合わせて用いることができる。
Mg1−xAlx(OH)2(CO3)x/2・mH2O (IV)
(0<X≦0.5、mは正の数)
ハイドロサルタイト化合物は、ハロゲンイオンなどの陰イオンを構造中のCO3と置換することで捕捉し、結晶構造の中に取り込まれたハロゲンイオンは約350℃以上で結晶構造が破壊するまで脱離しない性質を持つ化合物である。この様な性質を持つハイドロサルタイトを例示すれば、天然物として産出されるMg6Al2(OH)16CO3・4H2O、合成品としてMg4.3Al2(OH)12.6CO3・mH2O等が挙げられる。また、本発明の封止材用固形樹脂組成物は、(B)成分のフェノール硬化剤(樹脂)の影響で、純水を使用した硬化物の抽出液がpH3〜5と酸性を示す。したがって、本発明の封止材用固形樹脂組成物は、両性金属であるアルミニウムに対しては腐食しやすい環境となるが、ハイドロサルタイト化合物は酸を吸着する作用も持つことから抽出液を中性に近づける作用もある。このハイドロサルタイト化合物の添加による作用効果により、アルミニウムの腐食を効果的に防ぐことができると推察できる。
また、マグネシウム、アルミニウム、チタン、ジルコニウム、ビスマス及びアンチモンからなる群より選ばれる少なくとも1種の元素の含水酸化物も、ハロゲンイオンを水酸化物イオンと置換することで捕捉でき、さらにこれらのイオン交換体は酸性側で優れたイオン交換能を示す。本発明の封止材用固形樹脂組成物については、前述のように抽出液が酸性側となることから、これらの含水酸化物もアルミニウムの腐食防止に対し特に有効である。このような含水酸化物を例示すれば、MgOnH2O、Al2O3nH2O、ZrO2H2O,Bi2O3H2O、Sb2O5nH2O等の含水酸化物が挙げられる。
陰イオン交換体の含有率は、ハロゲンイオン等の陰イオンを捕捉できる充分な量であれば特に制限はない。封止材用固形樹脂組成物が陰イオン交換体を含有する場合、(A)エポキシ樹脂に対する陰イオン交換体の含有率は、0.1質量%〜30質量%であることが好ましく、1質量%〜5質量%であることがより好ましい。
<Anion exchanger>
The solid resin composition for a sealing material of the present invention may contain an anion exchanger as necessary. In particular, when an epoxy resin composition is used as a molding material for sealing, an anion exchanger may be contained from the viewpoint of improving moisture resistance and high temperature storage characteristics of an electronic component device including an element to be sealed. preferable.
There is no restriction | limiting in particular as an anion exchanger, The thing generally used in the said technical field conventionally is mentioned. Examples of the anion exchanger include hydrosartite compounds represented by the following general formula (IV); hydrous oxides of elements selected from magnesium, aluminum, titanium, zirconium and bismuth; An anion exchanger can be used individually by 1 type or in combination of 2 or more types.
Mg 1-x Al x (OH) 2 (CO 3 ) x / 2 · mH 2 O (IV)
(0 <X ≦ 0.5, m is a positive number)
Hydrosartite compounds are captured by substituting anions such as halogen ions with CO 3 in the structure, and halogen ions incorporated into the crystal structure are desorbed at about 350 ° C. or higher until the crystal structure is destroyed. It has no properties. Examples of hydrosartite having such properties include Mg 6 Al 2 (OH) 16 CO 3 .4H 2 O produced as a natural product, and Mg 4.3 Al 2 (OH) 12.6 as a synthetic product. CO 3 · mH 2 O and the like can be mentioned. Moreover, the solid resin composition for sealing materials of this invention shows the acidity of pH 3-5 and the extract of the hardened | cured material which uses a pure water by the influence of the phenol hardener (resin) of (B) component. Therefore, the solid resin composition for a sealing material of the present invention is an environment that is easily corroded with respect to aluminum which is an amphoteric metal, but the hydrosartite compound also has an action of adsorbing an acid, so There is also an effect to bring close to sex. It can be inferred that corrosion of aluminum can be effectively prevented by the action effect of the addition of the hydrosartite compound.
In addition, hydrous oxides of at least one element selected from the group consisting of magnesium, aluminum, titanium, zirconium, bismuth and antimony can also be captured by replacing halogen ions with hydroxide ions, and these ion exchanges. The body shows excellent ion exchange capacity on the acidic side. About the solid resin composition for sealing materials of this invention, since an extract becomes an acidic side as mentioned above, these hydrous oxides are especially effective with respect to corrosion prevention of aluminum. Examples of such hydrous oxides are hydrous oxides such as MgO n H 2 O, Al 2 O 3n H 2 O, ZrO 2 H 2 O, Bi 2 O 3 H 2 O, Sb 2 O 5 nH 2 O and the like. Things.
The content of the anion exchanger is not particularly limited as long as it is a sufficient amount that can capture anions such as halogen ions. When the solid resin composition for sealing materials contains an anion exchanger, the content of the anion exchanger relative to the epoxy resin (A) is preferably 0.1% by mass to 30% by mass, and 1% by mass. It is more preferable that it is% -5 mass%.
<離型剤>
封止材用固形樹脂組成物は、成形工程において金型に対する良好な離型性を発揮させる観点から、離型剤を含有してもよい。離型剤の種類は特に制限されず、当該技術分野において公知の離型剤が挙げられる。具体的に、離型剤としては、カルナバワックス、モンタン酸、ステアリン酸等の高級脂肪酸、高級脂肪酸金属塩、モンタン酸エステル等のエステル系ワックス、酸化ポリエチレン、非酸化ポリエチレン等のポリオレフィン系ワックスなどが挙げられる。離型剤は、1種を単独で用いても2種以上を組み合わせて用いてもよい。なかでも、離型剤としては、酸化型又は非酸化型のポリオレフィン系ワックスが好ましい。
樹脂組成物が離型剤としてポリオレフィン系ワックスを含有する場合、ポリオレフィン系ワックスの含有率としては、(A)エポキシ樹脂に対して0.01質量%〜10質量%が好ましく、0.1質量%〜5質量%がより好ましい。ポリオレフィン系ワックスの含有率が0.01質量%以上であると離型性が充分となる傾向があり、10質量%以下であると接着性が充分となる傾向がある。
また、ポリオレフィン系ワックスにその他の離型剤を併用する場合、その他の離型剤の含有率は、(A)エポキシ樹脂に対して0.1質量%〜10質量%が好ましく、0.5質量%〜3質量%がより好ましい。
<Release agent>
The solid resin composition for a sealing material may contain a release agent from the viewpoint of exhibiting good release properties for the mold in the molding step. The kind in particular of a mold release agent is not restrict | limited, A mold release agent well-known in the said technical field is mentioned. Specific examples of the release agent include carnauba wax, higher fatty acids such as montanic acid and stearic acid, higher fatty acid metal salts, ester waxes such as montanic acid esters, polyolefin waxes such as polyethylene oxide and non-oxidized polyethylene. Can be mentioned. A mold release agent may be used individually by 1 type, or may be used in combination of 2 or more type. Among these, as the release agent, an oxidized or non-oxidized polyolefin wax is preferable.
When the resin composition contains a polyolefin wax as a release agent, the content of the polyolefin wax is preferably 0.01% by mass to 10% by mass, and 0.1% by mass with respect to (A) the epoxy resin. -5 mass% is more preferable. If the content of the polyolefin wax is 0.01% by mass or more, the release property tends to be sufficient, and if it is 10% by mass or less, the adhesiveness tends to be sufficient.
Moreover, when using other mold release agent together with polyolefin-type wax, 0.1 mass%-10 mass% are preferable with respect to (A) epoxy resin, and 0.5 mass is preferable. % To 3% by mass is more preferable.
<着色剤等>
本発明の封止材用固形樹脂組成物は、カーボンブラック、有機染料、有機顔料、酸化チタン、鉛丹、ベンガラ等の着色剤を含有してもよい。その他、必要に応じて、本発明による効果を低下させない範囲において種々の添加剤を含有してもよい。
<Colorants etc.>
The solid resin composition for a sealing material of the present invention may contain a colorant such as carbon black, organic dye, organic pigment, titanium oxide, red lead, bengara and the like. In addition, you may contain various additives in the range which does not reduce the effect by this invention as needed.
<製造方法>
本発明の封止材用固形樹脂組成物の製造方法としては、各種成分を均一に分散混合できるのであれば、いずれの手法を用いてもよい。一般的な手法として、所定の配合量の成分をミキサー等によって充分混合した後、ミキシングロール、押出機等によって溶融混練し、冷却し、粉砕する方法を挙げることができる。より具体的には、封止材用固形樹脂組成物は、例えば、上述した成分の所定量を混合して攪拌し、予め70℃〜140℃に加熱してあるニーダー、ロール、エクストルーダー等で混練した後、冷却し、粉砕する等の方法によって得ることができる。封止材用固形樹脂組成物は、パッケージの成形条件に合うような寸法及び質量でタブレット化すると取り扱いが容易になる。
<Manufacturing method>
As a method for producing the solid resin composition for a sealing material of the present invention, any method may be used as long as various components can be dispersed and mixed uniformly. As a general technique, there can be mentioned a method in which components of a predetermined blending amount are sufficiently mixed by a mixer or the like, then melt-kneaded by a mixing roll, an extruder or the like, cooled and pulverized. More specifically, the solid resin composition for a sealing material is, for example, a kneader, a roll, an extruder, or the like that is mixed with a predetermined amount of the components described above and stirred and heated to 70 ° C to 140 ° C in advance. After kneading, it can be obtained by a method such as cooling and pulverization. When the solid resin composition for a sealing material is tableted with a size and a mass suitable for the molding conditions of the package, handling becomes easy.
本発明の半導体パッケージの種類としては、例えば次の様な種類があるが、これに限るものではない。
即ち、BGA(Ball Grid Array)、FCBGA(Flip Chip BGA)、MAPBGA(Molded Array Process BGA)などである。また、本発明の封止材用固形樹脂組成物の適用例としてより好ましい例として、eWLB(Embedded Wafer−Level BGA)があり、Fan−Out型、Fan−In型、SiP(System in Package)などの形態がある。
Examples of the semiconductor package of the present invention include the following types, but are not limited thereto.
That is, BGA (Ball Grid Array), FCBGA (Flip Chip BGA), MAPBGA (Molded Array Process BGA), and the like. Further, as a more preferable application example of the solid resin composition for a sealing material of the present invention, there is eWLB (Embedded Wafer-Level BGA), such as Fan-Out type, Fan-In type, SiP (System in Package), and the like. There are forms.
本発明の半導体パッケージの製造方法としては、例えば次の様な方法があるが、これに限るものではない。
即ち、支持体であるキャリア上に、バッファーコート材をスピンコートして、バッファーコート材を硬化して絶縁膜層を形成した後、パターニング処理により電極パッド部分を開孔する。開孔部分からバッファコート材表面へ、めっきなどにより再配線加工と実装用バンプ形成を行う(再配線工程)。次に、予め動作することが分かっている半導体チップをその活性面を下向きに多数個並べる工程(半導体チップを支持体に多数個配置する工程)、次に、リフロー工程を経ることでチップを再配線層と接続する工程(導通確保工程)、次にアンダーフィルを注入し、硬化させることでチップと再配線層間を保護(アンダーフィル工程)、次に、本発明の封止材用固形樹脂組成物を均一に散布する工程(散布工程)、次に圧縮成形(金型により成形する工程)後、キャリアを剥がして半導体チップが封止され再配置されたウエハーを得る(再配置ウエハー)。その後、このウエハーを任意の厚みにグラインドし、ダイシングにより個片化する(個片化工程)ことで半導体パッケージが得られる。
As a method for manufacturing a semiconductor package of the present invention, for example, there is the following method, but the method is not limited to this.
That is, a buffer coating material is spin-coated on a carrier as a support, the buffer coating material is cured to form an insulating film layer, and then an electrode pad portion is opened by a patterning process. Rewiring processing and mounting bump formation are performed by plating or the like from the hole portion to the surface of the buffer coating material (rewiring process). Next, a process of arranging a large number of semiconductor chips known to operate in advance with their active surfaces facing downward (a process of arranging a large number of semiconductor chips on a support), and then reflowing the chips through a reflow process. The step of connecting to the wiring layer (conducting ensuring step), then injecting and curing underfill to protect the chip and the rewiring layer (underfill step), and then the solid resin composition for sealing material of the present invention After the step of uniformly spreading the object (spraying step) and then compression molding (molding step using a mold), the carrier is peeled off to obtain a wafer in which the semiconductor chips are sealed and rearranged (rearranged wafer). Thereafter, the wafer is grinded to an arbitrary thickness, and diced into individual pieces (divided into individual pieces) to obtain a semiconductor package.
以下、実施例を用いて、本発明を具体的に説明するが、これらに限定されるものではない。尚、特に断りのない限り、「%」は質量基準である。また、表中の「−」は該当する成分を含有しないことを意味する。以下に実施例、比較例で用いた材料を示す。
<(A)エポキシ樹脂>
(1)EPPN−501HY:トリフェニルメタン型エポキシ樹脂、日本化薬株式会社製
(2)YX−4000H:ビフェニル型エポキシ樹脂、三菱化学株式会社製
(3)KF−1001:エポキシ変性シリコーン、信越化学工業株式会社製
<(B)フェノール硬化剤>
(4)MEH−7500:トリフェニルメタン型フェノール樹脂、明和化成株式会社製
<(C)マレイミド樹脂>
(5)SFR−2300:長鎖アルキル基含有ビスマレイミド樹脂、日立化成株式会社製
<(D)硬化促進剤>
(6)TBP−3S:テトラブチルホスホニウム−カルボキシレート、北興化学工業株式会社製
(7)TBP−3:テトラブチルホスホニウム−カルボキシレート、北興化学工業株式会社製
(8)TPP−フタル酸:テトラフェニルホスホニウム−フタル酸塩、北興化学工業株式会社製
(9)TPPLA:テトラフェニルホスホニウム−ラウリン酸塩、北興化学工業株式会社製
<(E)充填剤>
(10)ST7010−2:平均粒子径11μmの球状溶融シリカ、マイクロン社製
(11)SO−25R:平均粒子径0.6μmの球状溶融シリカ、株式会社アドマッテクス製
<(F)カップリング剤>
(12)KBM−403:3−グリシドキシプロピルトリメトキシシラン、信越化学工業株式会社製
<(G)着色剤>
(13)MA−100:カーボンブラック、三菱化学株式会社製
<(H)陰イオン交換体(イオントラッパ)>
(14)DHT−4A:ハイドロタルサイト化合物、協和化学工業株式会社製
EXAMPLES Hereinafter, although an Example demonstrates this invention concretely, it is not limited to these. Unless otherwise specified, “%” is based on mass. Further, “-” in the table means that the corresponding component is not contained. The materials used in Examples and Comparative Examples are shown below.
<(A) Epoxy resin>
(1) EPPN-501HY: triphenylmethane type epoxy resin, manufactured by Nippon Kayaku Co., Ltd. (2) YX-4000H: biphenyl type epoxy resin, manufactured by Mitsubishi Chemical Corporation (3) KF-1001: epoxy-modified silicone, Shin-Etsu Chemical Industrial Co., Ltd. <(B) phenol curing agent>
(4) MEH-7500: Triphenylmethane type phenol resin, manufactured by Meiwa Kasei Co., Ltd. <(C) Maleimide resin>
(5) SFR-2300: long-chain alkyl group-containing bismaleimide resin, manufactured by Hitachi Chemical Co., Ltd. <(D) curing accelerator>
(6) TBP-3S: Tetrabutylphosphonium-carboxylate, manufactured by Hokuko Chemical Co., Ltd. (7) TBP-3: Tetrabutylphosphonium-carboxylate, manufactured by Hokuko Chemical Co., Ltd. (8) TPP-phthalic acid: tetraphenyl Phosphonium-phthalate, manufactured by Hokuko Chemical Co., Ltd. (9) TPPLA: Tetraphenylphosphonium-laurate, manufactured by Hokuko Chemical Co., Ltd. <(E) filler>
(10) ST7010-2: spherical fused silica having an average particle diameter of 11 μm, manufactured by Micron (11) SO-25R: spherical fused silica having an average particle diameter of 0.6 μm, manufactured by Admatex Co., Ltd. <(F) coupling agent>
(12) KBM-403: 3-glycidoxypropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd. <(G) Colorant>
(13) MA-100: Carbon black, manufactured by Mitsubishi Chemical Corporation <(H) anion exchanger (ion trapper)>
(14) DHT-4A: Hydrotalcite compound, manufactured by Kyowa Chemical Industry Co., Ltd.
<封止材用固形樹脂組成物の特性評価>
作製した封止材用固形樹脂組成物について、以下の評価を行った。
封止材用固形樹脂組成物を130℃10分、175℃6時間の硬化条件により硬化して試験サンプルを作製した。
<Characteristic evaluation of solid resin composition for sealing material>
The following evaluation was performed about the produced solid resin composition for sealing materials.
The solid resin composition for sealing material was cured under curing conditions of 130 ° C. for 10 minutes and 175 ° C. for 6 hours to prepare a test sample.
<ガラス転移温度、40℃弾性率、200℃弾性率>
(a)ガラス転移温度:粘弾性測定装置(RSAIII、ティー・エイ・インスツルメント・ジャパン株式会社製)を用いて、短冊状に成形した試験サンプルをスパン間距離40mm、周波数1Hzの条件下、3点曲げ法にて20℃から300℃まで5℃/minで昇温し、tanδが最大値を示す温度をガラス転移温度とした。
(b)40℃弾性率:上記(a)の測定装置、条件で測定を行い、40℃における貯蔵弾性率の値を40℃弾性率とした。
(c)200℃弾性率:上記(a)の測定装置、条件で測定を行い、200℃における貯蔵弾性率の値を200℃弾性率とした。
<Glass transition temperature, 40 ° C. elastic modulus, 200 ° C. elastic modulus>
(A) Glass transition temperature: Using a viscoelasticity measuring device (RSAIII, manufactured by T.A. Instruments Japan Co., Ltd.), a test sample formed into a strip shape was subjected to a distance between spans of 40 mm and a frequency of 1 Hz. The temperature was raised from 20 ° C. to 300 ° C. at 5 ° C./min by a three-point bending method, and the temperature at which tan δ showed the maximum value was taken as the glass transition temperature.
(B) Elastic modulus at 40 ° C .: Measured with the measuring device and conditions of (a) above, and the value of the storage elastic modulus at 40 ° C. was taken as the elastic modulus at 40 ° C.
(C) 200 ° C. elastic modulus: Measured using the measurement apparatus and conditions of (a) above, and the value of the storage elastic modulus at 200 ° C. was defined as the 200 ° C. elastic modulus.
<熱膨張係数CTE1、CTE2>
(d)熱機械分析装置(TMA2940、ティー・エイ・インスツルメント・ジャパン株式会社製)を用いて、四角柱上に成形した試験サンプルを圧縮法にて0℃から300℃まで5℃/minで昇温測定し、10−30℃における接線の傾きをCTE1、200−220℃における接線の傾きをCTE2とした(単位;ppm/℃=1×10−6/K)。
<Coefficient of thermal expansion CTE1, CTE2>
(D) Using a thermomechanical analyzer (TMA2940, manufactured by T.A. Instruments Japan Co., Ltd.), a test sample molded on a square column was compressed at 0 ° C. to 300 ° C. by 5 ° C./min. The tangential slope at 10-30 ° C. was CTE1, and the tangential slope at 200-220 ° C. was CTE 2 (unit: ppm / ° C. = 1 × 10 −6 / K).
<反り評価>
TOWA株式会社製の成形機(型番CPM−1080)を用い、直系12インチ(300mm)、厚み750μmのシリコンウエハー片面上で、各実施例及び比較例で得た封止材用固形樹脂組成物を圧力5.0MPa、温度130℃、時間10分間の条件で圧縮成形することで厚み500μmのウエハ付き成形物を得た。得られたウエハ付き成形物を175℃、6hの条件で後硬化し、後硬化後のウエハ付き成形物をakrometrix社製の表面形状測定装置(型番サーモレイAXP)を用いて後硬化後の反りを評価した。反り量はウエハ付き成形物の最も反りが少ない箇所と最も反っている箇所の値の差をそのウエハ付き成形物の反り量とした。
上記の測定結果を表1に示した。
<Evaluation of warpage>
Using a molding machine (model number CPM-1080) manufactured by TOWA Co., Ltd., a solid resin composition for encapsulant obtained in each of Examples and Comparative Examples on a single-sided silicon wafer having a direct 12 inch (300 mm) and a thickness of 750 μm. A molded article with a wafer having a thickness of 500 μm was obtained by compression molding under conditions of a pressure of 5.0 MPa, a temperature of 130 ° C., and a time of 10 minutes. The obtained molded product with a wafer was post-cured under the conditions of 175 ° C. and 6 hours, and the post-cured molded product with a wafer was subjected to warping after post-curing using a surface shape measuring device (model number Thermoray AXP) manufactured by AKROMETRIC evaluated. The amount of warpage was defined as the amount of warpage of the molded product with wafer, which is the difference between the values of the least warped portion and the most warped portion of the molded product with wafer.
The measurement results are shown in Table 1.
表1の結果から、実施例の配合組成では、いずれの場合でも成形後に硬化しており、後硬化後の反り量が0.98〜1.2mmと反りが抑制されていることが分かる。これは用いた(C)マレイミド樹脂による低弾性化と配合量による反り抑制効果と(D)硬化促進剤の反応性の高さによるもの考える。
一方で比較例に示す配合組成((C)マレイミド樹脂の配合量が30〜70質量%を外れて高い)では成形後に未硬化のものがあり、また成形できたものでも((C)マレイミド樹脂の配合量が30〜70質量%を外れて低い)、熱膨張係数は低いが、反り量は2.3mmと悪いレベルで、Tgが低い値で、弾性率が高い値であった。
From the results of Table 1, it can be seen that in any case, the composition of the example is cured after molding, and the amount of warpage after post-curing is 0.98 to 1.2 mm, and the warpage is suppressed. This is considered to be due to the low elasticity by the (C) maleimide resin used, the warp suppressing effect by the blending amount, and (D) the high reactivity of the curing accelerator.
On the other hand, in the blending composition shown in the comparative example (the blending amount of (C) maleimide resin is high exceeding 30 to 70% by mass), there are uncured ones after molding, and even those that can be molded ((C) maleimide resin) The thermal expansion coefficient was low, but the warpage amount was a bad level of 2.3 mm, the Tg was low, and the elastic modulus was high.
Claims (10)
(ただし、n=0〜50、Xは、8〜100の整数である。) The solid resin composition for a sealing material according to any one of claims 1 to 5, wherein (C) is represented by the following general formula (II).
(However, n = 0 to 50 and X is an integer of 8 to 100.)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016227434A JP2018083893A (en) | 2016-11-24 | 2016-11-24 | Solid resin composition for sealing and rearrangement wafer therewith, semiconductor package, and production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016227434A JP2018083893A (en) | 2016-11-24 | 2016-11-24 | Solid resin composition for sealing and rearrangement wafer therewith, semiconductor package, and production method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2018083893A true JP2018083893A (en) | 2018-05-31 |
Family
ID=62238154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016227434A Pending JP2018083893A (en) | 2016-11-24 | 2016-11-24 | Solid resin composition for sealing and rearrangement wafer therewith, semiconductor package, and production method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2018083893A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020015814A (en) * | 2018-07-25 | 2020-01-30 | 日立化成株式会社 | Thermosetting resin composition for printed wiring board, prepreg, laminate sheet, printed wiring board, and semiconductor package |
| JP2020041070A (en) * | 2018-09-12 | 2020-03-19 | 信越化学工業株式会社 | Thermosetting resin composition, thermosetting resin film, and semiconductor device |
| JP2020136450A (en) * | 2019-02-19 | 2020-08-31 | 信越化学工業株式会社 | A sealing material, a semiconductor device sealed by the sealing material, and a method for manufacturing a semiconductor package having the sealing material. |
| US10759753B2 (en) | 2017-06-19 | 2020-09-01 | Unitika Ltd. | Bismaleimide modified product and method for producing the same |
| KR20210028120A (en) | 2019-09-03 | 2021-03-11 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Maleimide resin film and composition for maleimide resin film |
| JPWO2020035906A1 (en) * | 2018-08-14 | 2021-08-26 | 昭和電工マテリアルズ株式会社 | Method for manufacturing adhesive composition and semiconductor device |
| JPWO2021261305A1 (en) * | 2020-06-24 | 2021-12-30 | ||
| JP2022113053A (en) * | 2021-01-22 | 2022-08-03 | 味の素株式会社 | Resin composition, resin paste, cured product, semiconductor chip package and semiconductor device |
| JP2023113250A (en) * | 2022-02-03 | 2023-08-16 | 住友ベークライト株式会社 | Sealing resin composition |
| JP2023160985A (en) * | 2020-03-31 | 2023-11-02 | 味の素株式会社 | Resin compositions, cured products of resin compositions, resin sheets, printed wiring boards, semiconductor chip packages, and semiconductor devices |
| US12275846B2 (en) | 2020-06-24 | 2025-04-15 | Panasonic Intellectual Property Management Co., Ltd. | Resin composition, prepreg, film with resin, metal foil with resin, metal-clad laminate, and printed wiring board |
| WO2025258612A1 (en) * | 2024-06-11 | 2025-12-18 | 株式会社レゾナック | Sealing resin composition, repositioned wafer, semiconductor package, and method for producing semiconductor package |
-
2016
- 2016-11-24 JP JP2016227434A patent/JP2018083893A/en active Pending
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10759753B2 (en) | 2017-06-19 | 2020-09-01 | Unitika Ltd. | Bismaleimide modified product and method for producing the same |
| JP7670048B2 (en) | 2018-07-25 | 2025-04-30 | 株式会社レゾナック | Thermosetting resin composition for printed wiring boards, prepregs, laminates, printed wiring boards and semiconductor packages |
| JP2023041681A (en) * | 2018-07-25 | 2023-03-24 | 株式会社レゾナック | Thermosetting resin composition for printed wiring board, prepreg, laminate sheet, printed wiring board, and semiconductor package |
| JP2020015814A (en) * | 2018-07-25 | 2020-01-30 | 日立化成株式会社 | Thermosetting resin composition for printed wiring board, prepreg, laminate sheet, printed wiring board, and semiconductor package |
| JPWO2020035906A1 (en) * | 2018-08-14 | 2021-08-26 | 昭和電工マテリアルズ株式会社 | Method for manufacturing adhesive composition and semiconductor device |
| JP7210849B2 (en) | 2018-08-14 | 2023-01-24 | 株式会社レゾナック | ADHESIVE COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| US11795356B2 (en) | 2018-08-14 | 2023-10-24 | Resonac Corporation | Adhesive composition and semiconductor device production method |
| JP2020041070A (en) * | 2018-09-12 | 2020-03-19 | 信越化学工業株式会社 | Thermosetting resin composition, thermosetting resin film, and semiconductor device |
| CN110894339B (en) * | 2018-09-12 | 2023-08-29 | 信越化学工业株式会社 | Thermosetting resin composition, thermosetting resin film, and semiconductor device |
| KR102918667B1 (en) * | 2018-09-12 | 2026-01-28 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Heat-curable resin composition, heat-curable resin film and semiconductor device |
| TWI831820B (en) * | 2018-09-12 | 2024-02-11 | 日商信越化學工業股份有限公司 | Heat-curable resin composition, heat-curable resin film and semiconductor device |
| CN110894339A (en) * | 2018-09-12 | 2020-03-20 | 信越化学工业株式会社 | Thermosetting resin composition, thermosetting resin film, and semiconductor device |
| JP7014195B2 (en) | 2019-02-19 | 2022-02-01 | 信越化学工業株式会社 | A method for manufacturing a sealing material, a semiconductor device sealed by the sealing material, and a semiconductor package having the sealing material. |
| JP2020136450A (en) * | 2019-02-19 | 2020-08-31 | 信越化学工業株式会社 | A sealing material, a semiconductor device sealed by the sealing material, and a method for manufacturing a semiconductor package having the sealing material. |
| KR20210028120A (en) | 2019-09-03 | 2021-03-11 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Maleimide resin film and composition for maleimide resin film |
| JP2023160985A (en) * | 2020-03-31 | 2023-11-02 | 味の素株式会社 | Resin compositions, cured products of resin compositions, resin sheets, printed wiring boards, semiconductor chip packages, and semiconductor devices |
| JP7647825B2 (en) | 2020-03-31 | 2025-03-18 | 味の素株式会社 | Resin composition, cured product of resin composition, resin sheet, printed wiring board, semiconductor chip package, and semiconductor device |
| JPWO2021261305A1 (en) * | 2020-06-24 | 2021-12-30 | ||
| US12275846B2 (en) | 2020-06-24 | 2025-04-15 | Panasonic Intellectual Property Management Co., Ltd. | Resin composition, prepreg, film with resin, metal foil with resin, metal-clad laminate, and printed wiring board |
| WO2021261305A1 (en) * | 2020-06-24 | 2021-12-30 | パナソニックIpマネジメント株式会社 | Resin composition, prepreg, film with resin, metal foil with resin, metal-clad laminate and printed wiring board |
| JP7759625B2 (en) | 2020-06-24 | 2025-10-24 | パナソニックIpマネジメント株式会社 | Resin composition, prepreg, resin-coated film, resin-coated metal foil, metal-clad laminate, and printed wiring board |
| JP2022113053A (en) * | 2021-01-22 | 2022-08-03 | 味の素株式会社 | Resin composition, resin paste, cured product, semiconductor chip package and semiconductor device |
| JP2023113250A (en) * | 2022-02-03 | 2023-08-16 | 住友ベークライト株式会社 | Sealing resin composition |
| JP7800173B2 (en) | 2022-02-03 | 2026-01-16 | 住友ベークライト株式会社 | Sealing resin composition |
| WO2025258612A1 (en) * | 2024-06-11 | 2025-12-18 | 株式会社レゾナック | Sealing resin composition, repositioned wafer, semiconductor package, and method for producing semiconductor package |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2018083893A (en) | Solid resin composition for sealing and rearrangement wafer therewith, semiconductor package, and production method thereof | |
| TWI796293B (en) | Epoxy resin composition for semiconductor encapsulation and method for producing semiconductor device | |
| JP6090614B2 (en) | Liquid epoxy resin composition for semiconductor encapsulation and resin-encapsulated semiconductor device | |
| TWI763877B (en) | Thermosetting epoxy resin sheet for semiconductor sealing, semiconductor device, and manufacturing method thereof | |
| TW201627390A (en) | Resin composition for semiconductor encapsulation, semiconductor device and structure | |
| JP6915256B2 (en) | A resin composition for encapsulation, and a method for manufacturing a rearranged wafer, a semiconductor package, and a semiconductor package using the resin composition. | |
| JP7230936B2 (en) | Epoxy resin composition for semiconductor encapsulation and method for manufacturing semiconductor device | |
| TWI661038B (en) | Resin composition for encapsulation, method for manufacturing electronic component and electronic component | |
| JPWO2010029726A1 (en) | Semiconductor device and resin composition used for semiconductor device | |
| JP7248071B2 (en) | Encapsulating resin composition and semiconductor device | |
| TWI663203B (en) | Resin sheet, semiconductor device, and method for manufacturing semiconductor device | |
| WO2019131096A1 (en) | Encapsulating epoxy resin composition for ball grid array package, cured epoxy resin object, and electronic component/device | |
| JP6221382B2 (en) | Epoxy resin composition and electronic component device | |
| CN111868169A (en) | Epoxy resin composition and electronic component device | |
| JP7571407B2 (en) | Encapsulating resin composition and electronic component device | |
| JP7536406B2 (en) | Semiconductor device manufacturing method | |
| JP7501116B2 (en) | Flame-retardant resin composition and structure | |
| JP7533439B2 (en) | Curable resin composition and electronic component device | |
| JP7255227B2 (en) | Resin composition for semiconductor encapsulation and semiconductor device | |
| JP2022099653A (en) | Sealing resin composition, method for manufacturing electronic device, semiconductor device and electronic device | |
| JP2025066293A (en) | Encapsulating resin composition and semiconductor device | |
| WO2023286728A1 (en) | Resin composition for semiconductor sealing, and semiconductor device | |
| WO2024071234A1 (en) | Curable composition, cured product, production method for cured product, semiconductor package, and production method for semiconductor package | |
| WO2022118749A1 (en) | Resin composition for sealing and semiconductor device | |
| JP2009283621A (en) | Semiconductor device, and method for manufacturing semiconductor device |