JP2018078199A - Temporarily fixing resin composition, temporarily fixing resin film, and temporarily fixing resin film sheet - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a temporarily fixing resin composition which has a superior low-temperature adhesion, the ability to level the difference in height and an adequate heat resistance, which can fix a semiconductor chip, a semiconductor wafer and the like to a support body adequately, which can be separated easily after processing, and which is hard to leave a temporarily fixing material.SOLUTION: A temporarily fixing resin composition is to be used in a processing method comprising a temporarily fixing step of temporarily fixing a semiconductor wafer 60 to a support body 50 through a film-like temporarily fixing material 70, a processing step of processing the semiconductor wafer temporarily fixed to the support body, and a separation step of separating the processed semiconductor wafer from the support body and the film-like temporarily fixing material. The temporarily fixing resin composition comprises a polymer component. The polymer component includes a first polymer component having a weight-average molecular weight Mw(A) equal to or larger than 100,000 and less than 600,000, and having a glass transition temperature of -50 to 50°C, and a second polymer component having a weight-average molecular weight Mw(B) satisfying the following expression (1), and having a glass transition temperature of -50 to 50°C: Mw(B)-Mw(A)≥100,000 (1).SELECTED DRAWING: Figure 3

Description

  The present invention relates to a temporarily fixing resin composition, a temporarily fixing resin film, and a temporarily fixing resin film sheet.

  In the field of electronic components, the growth of technology related to a package called SIP (System in Package) in which a plurality of semiconductor elements are stacked is remarkable. In the SIP type package, since a large number of semiconductor elements are stacked, the semiconductor element is required to be as thin as possible. Such a semiconductor element is manufactured, for example, by incorporating an integrated circuit into a semiconductor wafer having a certain thickness and then dividing the thinned semiconductor wafer by grinding the back surface of the semiconductor wafer. The processing of the semiconductor wafer is performed by temporarily fixing the semiconductor wafer to a support with a temporarily fixing material (see, for example, Patent Document 1).

  Conventionally, the wire bonding method has been the mainstream for connecting semiconductor elements, but in recent years, a connection method called TSV (through silicon via) has attracted attention and has been actively studied. In the case of manufacturing a semiconductor element having a through electrode, a process for forming a through electrode is further performed after the semiconductor wafer is thinned. In this case, a high temperature process for heating the semiconductor wafer to about 300 ° C. is involved.

  Further, with regard to the connection of semiconductor elements, a method of manufacturing a wafer level package by flip-chip mounting a semiconductor chip on a thinned semiconductor wafer has attracted attention. In the flip chip mounting process, it is necessary to heat to 260 ° C. or higher in order to melt the solder.

International Publication No. 2008/045669 Pamphlet

  Therefore, with respect to the temporary fixing material used in the manufacturing process described above, the embedding property that can embed unevenness of Cu pillars or solder balls on the circuit surface of a workpiece such as a semiconductor chip or a semiconductor wafer without gaps, and In addition, it is required to have adhesiveness for firmly fixing the support and the workpiece during grinding of the workpiece and heat resistance in a high-temperature process. On the other hand, the temporary fixing material is required to have releasability capable of easily separating the processed workpiece from the support. In particular, it is required that the workpiece and the support can be separated at as low a temperature as possible so that the semiconductor chip is not damaged and warped, and that the temporarily fixed material does not remain on the workpiece.

  The temporary fixing material described in Patent Document 1 tends to have insufficient heat resistance for a high-temperature process when a through electrode is formed on a semiconductor wafer and a high-temperature process when a semiconductor wafer having a through-electrode is connected to each other. . If the heat resistance of the temporarily fixing material is insufficient, there is a tendency that the temporarily fixing material is thermally decomposed during the high temperature process and the semiconductor wafer is peeled off from the support.

  In order to avoid such a problem, it is conceivable to use a resin having general heat resistance such as polyimide having a high glass transition temperature (Tg). However, when the temporary fixing material is made into a film to make it easy to ensure flatness during processing, if the glass transition temperature of the resin is high, the semiconductor wafer and the support are stuck at a high temperature in order to sufficiently fix them. Alignment is required and may damage the semiconductor wafer. For this reason, the film-like temporary fixing material is required to have a low-temperature sticking property that can bury the step of the semiconductor wafer without gap even when pasted together at a low temperature and can sufficiently fix the semiconductor wafer and the support.

  The present invention has been made in view of the above circumstances, and has excellent low temperature sticking property, step embedding property, and sufficient heat resistance, and a workpiece such as a semiconductor chip or a semiconductor wafer is sufficiently used as a support. Formation of a film-like temporary fixing material that can be fixed and can easily separate the processed workpiece from the support and the temporary fixing material, and the temporary fixing material hardly remains on the processed workpiece after processing. An object of the present invention is to provide a temporarily fixing resin composition that can be used, a temporarily fixing resin film using the temporarily fixing resin composition, and a temporarily fixing resin film sheet.

The present invention provides a temporary fixing step of temporarily fixing a semiconductor wafer to a support via a film-like temporary fixing material, a processing step of processing the semiconductor wafer temporarily fixed to the support, and a support of the processed semiconductor wafer A temporary fixing resin composition for forming a film-like temporary fixing material used in a method for processing a semiconductor wafer comprising: a separation step for separating the body and the film-like temporary fixing material; The composition includes a high molecular weight component, the high molecular weight component is (A) the high molecular weight component is (A) the weight average molecular weight (Mw (A)) is 100,000 or more and less than 600,000, and the glass transition temperature is −50. The first high molecular weight component having a temperature of from 50 ° C. to 50 ° C. and (B) the weight average molecular weight (Mw (B)) satisfy the following formula (1), and the glass transition temperature is from −50 ° C. to 50 ° C. For temporary fixation containing a second high molecular weight component It provides fat compositions.
Mw (B) −Mw (A) ≧ 100,000 (1)

  According to the resin composition for temporary fixing according to the present invention, it has excellent low temperature sticking property, step embedding property, and sufficient heat resistance, and sufficiently fixes a workpiece such as a semiconductor chip or a semiconductor wafer to a support. A film-like temporary fixing material that can be formed can be formed. This film-like temporary fixing material can easily separate the processed workpiece from the support without any temporary fixing material remaining, and can be easily separated from the processed workpiece without any remaining temporary fixing material. Can do. Accordingly, the processed workpiece can be easily separated from the support and the temporary fixing material without immersing the workpiece in the solvent. In addition, when a high molecular weight component having a high degree of dispersion is prepared using only one type of high molecular weight component, a large amount of low molecular weight components are contained, and the heat resistance tends to deteriorate.

  Compared with the case where only one of the component (A) or the component (B) is used by combining the component (A) and the component (B) as the high molecular weight component, the molecular size of the high molecular weight component (molecular weight) ) Can be increased. According to the temporarily fixing resin composition according to the present invention, an excellent step filling in a film-like temporarily fixing material formed from the temporarily fixing resin composition by containing a specific high molecular weight component having a high degree of dispersion. It is possible to achieve both the ductility and the reduction of the temporarily fixed material remaining after peeling.

  In the temporarily fixing resin composition according to the present invention, the content of the component (A) is preferably 50% by mass or more and 95% by mass or less based on the total mass of the high molecular weight component. In this case, it is possible to further improve the low temperature sticking property and the step embedding property of the film-like temporarily fixing material formed from the temporarily fixing resin composition, and to further reduce the remainder of the temporarily fixing material after peeling. .

  In the temporarily fixing resin composition according to the present invention, the component (A) is preferably a (meth) acrylic copolymer containing a reactive group. In this case, the low-temperature sticking property, the step embedding property and the heat resistance of the film-like temporarily fixing material formed from the temporarily fixing resin composition can be more easily achieved.

  In the temporarily fixing resin composition according to the present invention, the component (B) is preferably a (meth) acrylic copolymer containing a reactive group. In this case, the low-temperature sticking property, the step embedding property and the heat resistance of the film-like temporarily fixing material formed from the temporarily fixing resin composition can be more easily achieved.

  In the resin composition for temporary fixing according to the present invention, the component (A) and the component (B) are (meth) acrylic copolymers containing a reactive group, and any one of the (meth) acrylic copolymers It is preferable that the reactive group is an epoxy group, and the reactive group of the other (meth) acrylic copolymer is a group capable of reacting with the epoxy group. In this case, the low temperature sticking property, the step embedding property and the heat resistance of the film-like temporarily fixing material formed from the temporarily fixing resin composition can be achieved at a higher level.

  In the temporarily fixing resin composition according to the present invention, the (A) component is a (meth) acrylic copolymer containing a reactive group, and the (meth) acrylic copolymer containing the reactive group is: The (meth) acrylic monomer containing a reactive group as a monomer component constituting the copolymer is blended in an amount of 1.0% by mass or more and 40.0% by mass or less based on the total amount of the monomer components. Is preferred. In this case, the low temperature sticking property, the step embedding property and the heat resistance of the film-like temporarily fixing material formed from the temporarily fixing resin composition can be achieved at a higher level.

  In the resin composition for temporary fixing according to the present invention, the component (B) is a (meth) acrylic copolymer containing a reactive group, and the (meth) acrylic copolymer containing the reactive group is: A (meth) acrylic monomer containing a reactive group which is a monomer component constituting the copolymer is blended in an amount of 1.0% by mass or more and 40.0% by mass or less based on the total amount of the monomer components. It is preferable. In this case, the low temperature sticking property, the step embedding property and the heat resistance of the film-like temporarily fixing material formed from the temporarily fixing resin composition can be achieved at a higher level.

  The temporarily fixing resin composition according to the present invention preferably further contains (C) a curing accelerator. In this case, it becomes easier to achieve both the curability and the storage stability of the temporarily fixing resin composition according to the present invention.

  The temporarily fixing resin composition according to the present invention preferably further contains (D) a silicone compound. In this case, the peelability of the temporarily fixing resin composition according to the present invention can be further improved.

  The present invention also provides a temporary fixing resin film formed by forming the temporary fixing resin composition according to the present invention into a film shape. By using such a temporarily fixing resin film, a workpiece such as a semiconductor chip or a semiconductor wafer can be efficiently processed. Thereby, a semiconductor element suitable for a SIP package can be efficiently manufactured, and further, a semiconductor device including the semiconductor element can be efficiently manufactured.

  The present invention also provides a temporary fixing resin film sheet comprising a support film having releasability and the temporary fixing resin film according to the present invention provided on the support film. According to the temporarily fixing resin film sheet according to the present invention, the temporarily fixing resin film according to the present invention can be easily transferred to a workpiece or support such as a semiconductor chip or a semiconductor wafer. It can be processed efficiently.

  According to the present invention, it has excellent low-temperature sticking property, step embedding property, and sufficient heat resistance, and can sufficiently fix a workpiece such as a semiconductor chip or a semiconductor wafer to a support, and after processing. Temporary fixing resin that can easily separate the workpiece from the support and the temporary fixing material, and enables the formation of a film-like temporary fixing material that is unlikely to remain on the processed workpiece after processing. The composition, the resin film for temporary fixing using the resin composition for temporary fixing, and the resin film sheet for temporary fixing can be provided.

FIG. 1 (A) is a top view showing one embodiment of a resin film sheet for temporary fixing according to the present invention, and FIG. 1 (B) is a schematic cross section taken along the line II in FIG. 1 (A). FIG. Fig. 2 (A) is a top view showing another embodiment of the resin film sheet for temporary fixing according to the present invention, and Fig. 2 (B) is a schematic view taken along line II-II in Fig. 2 (A). It is sectional drawing. 3A, 3B, and 3C are schematic cross-sectional views for explaining one embodiment of a method for processing a semiconductor wafer, and FIG. 3D is a semiconductor after processing. It is a top view which shows a wafer. FIG. 4 is a schematic cross-sectional view for explaining an embodiment of a separation process for separating a processed semiconductor wafer from a support and a film-like temporary fixing material. FIG. 5 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.

[Temporary fixing resin composition]
The temporarily fixing resin composition according to the present embodiment includes a temporary fixing step of temporarily fixing a workpiece such as a semiconductor chip or a semiconductor wafer via a film-like temporary fixing material, and a workpiece temporarily fixed to a support. To form a temporary fixing film used in a processing method for a workpiece, comprising: a processing step for processing the body; and a separation step for separating the processed workpiece from the support and the film-like temporary fixing material. The temporary fixing resin composition comprises a high molecular weight component, the high molecular weight component is (A) the high molecular weight component, and (A) the weight average molecular weight (Mw (A)) is 10. A first high molecular weight component (hereinafter also referred to as (A) component) having a glass transition temperature of −50 ° C. or more and 50 ° C. or less and (B) a weight average molecular weight (Mw ( B)) satisfies the following formula (1), and the glass transition temperature: The second high molecular weight component is -50 ° C. or higher 50 ° C. or less (hereinafter, (B) if that component is also) a.
Mw (B) −Mw (A) ≧ 100,000 (1)

  As the component (A) and the component (B) used in the present embodiment, a resin having thermoplasticity or a resin having thermoplasticity at least in an uncured state and forming a crosslinked structure after heating can be used.

  As the thermoplastic resin, a (meth) acrylic copolymer containing a reactive group (hereinafter sometimes referred to as “reactive group-containing (meth) acrylic copolymer”) is preferable. In this specification, (meth) acryl is used in the meaning of either acrylic or methacrylic.

  Examples of the reactive group-containing (meth) acrylic copolymer include (meth) acrylic ester copolymer and acrylic rubber, and acrylic rubber is more preferable. The acrylic rubber is preferably formed by copolymerization of a monomer mainly composed of an acrylic ester and selected from (meth) acrylic ester and acrylonitrile. Examples of (meth) acrylic acid esters include methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, butyl acrylate, isobutyl acrylate, hexyl acrylate, cyclohexyl acrylate, 2-ethylhexyl acrylate, lauryl acrylate, methyl methacrylate, ethyl methacrylate, and propyl. Examples include methacrylate, isopropyl acrylate, butyl methacrylate, isobutyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, 2-ethylhexyl methacrylate, and lauryl methacrylate. Specific examples of the copolymer based on a combination of monomers include a copolymer composed of butyl acrylate and acrylonitrile, and a copolymer composed of ethyl acrylate and acrylonitrile.

  The reactive group-containing (meth) acrylic copolymer preferably contains a (meth) acrylic monomer having a reactive group as a monomer component constituting the copolymer. Such a reactive group-containing (meth) acrylic copolymer can be obtained by copolymerizing a monomer composition containing a (meth) acrylic monomer having a reactive group and the above monomer. .

  As the reactive group, an epoxy group, a carboxyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, an amino group, and an episulfide group are preferable from the viewpoint of improving heat resistance, and an epoxy group and a carboxyl group are more preferable from the viewpoint of crosslinkability.

  When (A) component and (B) component are reactive group containing (meth) acrylic copolymers, the reactive group of (meth) acrylic copolymer of either (A) component or (B) component Is an epoxy group, and the reactive group of the other (meth) acrylic copolymer may be a group capable of reacting with an epoxy group. As the reactive group capable of reacting with the epoxy group, an epoxy group, a carboxyl group, and a phenyl group are preferable. In the copolymer of the component (A) and the component (B), examples of preferable reactive group combinations include an epoxy group and an epoxy group, an epoxy group and a carboxyl group, and an epoxy group and a phenyl group. With such component (A) and component (B), the film-like temporarily fixing material formed from the temporarily fixing resin composition has a higher level of low temperature sticking property and step embedding property and heat resistance. Both can be achieved.

  When the reactive group is an epoxy group, examples of the (meth) acrylic monomer having an epoxy group include glycidyl acrylate, 4-hydroxybutyl acrylate glycidyl ether, 3,4-epoxycyclohexylmethyl acrylate, glycidyl methacrylate, 4-hydroxy Examples include butyl methacrylate glycidyl ether and 3,4-epoxycyclohexylmethyl methacrylate. As the (meth) acrylic monomer having an epoxy group, glycidyl acrylate and glycidyl methacrylate are preferable from the viewpoint of heat resistance.

  When the component (A) is a reactive group-containing (meth) acrylic copolymer, the component (A) is a (meth) acrylic monomer containing a reactive group as a monomer component constituting the copolymer, It is preferable that 1.0 mass% or more and 40.0 mass% or less are mix | blended on the basis of monomer component whole quantity, and it is more preferable that 2.0 mass% or more and 35.0 mass% or less are mix | blended. In this case, the film-like temporarily fixing material formed from the temporarily fixing resin composition can easily achieve both a low temperature sticking property, a step embedding property, and heat resistance at a higher level.

  When the component (B) is a reactive group-containing (meth) acrylic copolymer, the component (B) is a (meth) acrylic monomer containing a reactive group as a monomer component constituting the copolymer, It is preferable that 1.0 mass% or more and 40.0 mass% or less are mix | blended on the basis of monomer component whole quantity, and it is more preferable that 2.0 mass% or more and 35.0 mass% or less are mix | blended. In this case, the film-like temporarily fixing material formed from the temporarily fixing resin composition can easily achieve both a low temperature sticking property, a step embedding property, and heat resistance at a higher level.

  In (A) component and (B) component, when a reactive group containing (meth) acrylic copolymer contains glycidyl acrylate and / or glycidyl methacrylate as a monomer component which comprises a copolymer, these compounding quantities Are in total, preferably from 1% by weight to 40% by weight, more preferably from 2% by weight to 35% by weight, and more preferably from 3% by weight to 30% by weight, based on the total amount of the monomer components. More preferably. When the blending amount is within the above range, when a film-like temporary fixing material is formed from the temporary fixing resin composition, sufficient storage stability tends to be obtained while sufficiently securing heat resistance.

  As the reactive group-containing (meth) acrylic copolymer as described above, one obtained by a polymerization method such as pearl polymerization or solution polymerization may be used, or HTR-280-CHN, HTR-860P-3CSP may be used. Commercial products such as (manufactured by Nagase ChemteX Corporation, trade name) may be used.

  The weight average molecular weight of the component (A) is from 100,000 to less than 600,000, preferably from 150,000 to 550,000, and more preferably from 200,000 to 50. (B) The weight average molecular weight of a component is 200,000 or more and 2 million or less, 250,000 or more and 1.9 million or less are preferable, and 300,000 or more and 1.8 million or less are more preferable. By using together the component (A) and the component (B) having different weight average molecular weights, the molecular size of the high molecular weight component (as compared to the case where only one of the component (A) or the component (B) is used) The degree of dispersion of the molecular weight can be increased. Therefore, according to the temporarily fixing resin composition according to the present invention, the film-like temporarily fixing material formed from the temporarily fixing resin composition is excellent by containing a specific high molecular weight component having a high degree of dispersion. It is possible to achieve both step embedding and reduction of the temporary fixing material remaining after peeling. From the viewpoint of further increasing the degree of molecular weight dispersion of the high molecular weight component, the difference in weight average molecular weight between the component (A) and the component (B) is preferably 100,000 or more, more preferably 120,000 or more. Is more preferable, and it is still more preferable that it is 140,000 or more. The weight average molecular weight is a polystyrene conversion value using a standard polystyrene calibration curve by gel permeation chromatography (GPC).

  The glass transition temperature (Tg) of (A) component and (B) component is -50 degreeC or more and 50 degrees C or less. When the Tg of the component (A) and the component (B) is 50 ° C. or less, when a film-like temporary fixing material is formed from the temporary fixing resin composition, flexibility can be secured, and the low temperature sticking property is lowered. Can be suppressed. Moreover, the film-like temporary fixing material formed from the temporary fixing resin composition makes it easy to embed bumps at 150 ° C. or lower when bumps or the like are present on the semiconductor wafer. On the other hand, when the Tg of the component (A) and the component (B) is −50 ° C. or more, the handling due to excessively high flexibility when a film-like temporary fixing material is formed from the temporary fixing resin composition. The fall of property and peelability can be suppressed. The Tg of the component (A) and the component (B) is preferably −45 ° C. or higher and 45 ° C. or lower, and more preferably −40 ° C. or higher and 40 ° C. or lower.

  Tg of (A) component and (B) component is a midpoint glass transition temperature value when measuring (A) component and (B) component using differential scanning calorimetry (DSC). Specifically, the Tg is a midpoint glass transition calculated by a method according to JIS K 7121: 1987 by measuring a change in calorie under conditions of a temperature rising rate of 10 ° C./min and a measurement temperature of −80 to 80 ° C. Temperature.

  In the high molecular weight component, the content of the component (A) is preferably 50% by mass or more and 95% by mass or less, and more preferably 55% by mass or more and 90% by mass or less based on the total mass of the high molecular weight component. Further, the content of the component (B) is preferably 5% by mass or more and 50% by mass or less, more preferably 10% by mass or more and 45% by mass or less based on the total mass of the high molecular weight component. In the high molecular weight component, the total content of the component (A) and the component (B) is preferably 55% by mass or more and 100% by mass or less, and 65% by mass or more based on the total mass of the high molecular weight component. More preferably, it is 100 mass% or less, and 100 mass% may be sufficient. If the content of the component (A) and the component (B) is within the above range, the step fixing property of the temporarily fixing resin film formed with the temporarily fixing resin composition is further improved, and the residue after peeling is more removed. Can be reduced.

  The temporarily fixing resin composition according to the present embodiment includes (A) a first high molecular weight component ((A) component), and (B) a second high molecular weight component ((B) component), as necessary. (C) Contains a curing accelerator (hereinafter also referred to as (C) component), (D) silicone compound (hereinafter also referred to as (D) component), an inorganic filler, an organic solvent, and other components. be able to.

  Examples of the component (C) include imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5]. , 4,0] undecene-7-tetraphenylborate and the like. These can be used alone or in combination of two or more.

  When the resin composition for temporary fixing according to the present embodiment contains a (meth) acrylic copolymer having an epoxy group, it contains a curing accelerator that accelerates curing of the epoxy group contained in the acrylic copolymer. Is preferred. Examples of curing accelerators that accelerate the curing of epoxy groups include phenolic curing agents, acid anhydride curing agents, amine curing agents, imidazole curing agents, imidazoline curing agents, triazine curing agents, and phosphine curing agents. Agents. Among these, from the viewpoint of fast curability, heat resistance, and peelability, an imidazole-based curing agent that can be expected to shorten process time and improve workability is preferable. These compounds can be used alone or in combination of two or more.

  The blending amount of the component (C) in the temporarily fixing resin composition according to this embodiment is preferably 0.01 parts by weight or more and 50 parts by weight or less, and 0.1 parts by weight or more and 20 parts by weight or less with respect to 100 parts by weight of the total high molecular weight component. Less than the mass part is more preferable. When the blending amount of the curing accelerator is within the above range, there is a tendency that a decrease in storage stability can be sufficiently reduced while obtaining sufficient curability.

  The component (D) can be used without particular limitation as long as it has a polysiloxane structure, and examples thereof include straight silicone oil, non-reactive modified silicone oil, and reactive modified silicone oil. A silicone compound can be used individually by 1 type or in combination of 2 or more types.

  The content of the component (D) in the temporarily fixing resin composition according to this embodiment is 1.0 part by mass or more in total with respect to 100 parts by mass of all high molecular weight components from the viewpoint of the balance between solubility and adhesiveness. 100 mass parts or less are preferable, 5.0 mass parts or more and 80 mass parts or less are more preferable, and 10 mass parts or more and 50 mass parts or less are still more preferable.

  Examples of the inorganic filler include metal fillers such as silver powder, gold powder, and copper powder; non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, iron oxide, and ceramic. The inorganic filler can be selected according to the desired function. For example, the metal filler can be added for the purpose of imparting thixotropy to the temporarily fixing resin composition, and the nonmetallic inorganic filler is for the purpose of imparting low thermal expansion and low moisture absorption to the temporarily fixing resin composition. Can be added. An inorganic filler can be used individually by 1 type or in combination of 2 or more types.

  The inorganic filler preferably has an organic group on the surface. Dispersibility in an organic solvent when preparing a resin composition for temporary fixing, and a film-like temporary fixing material formed from the resin composition for temporary fixing, because the surface of the inorganic filler is modified with an organic group It becomes easy to improve the adhesiveness and heat resistance.

  The inorganic filler having an organic group on the surface can be obtained, for example, by mixing a silane coupling agent represented by the following general formula (B-1) and an inorganic filler and stirring at a temperature of 30 ° C. or higher. . It can be confirmed by UV measurement, IR measurement, XPS measurement or the like that the surface of the inorganic filler is modified with an organic group.

In formula (B-1), X represents an organic group selected from the group consisting of a phenyl group, a glycidoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, a vinyl group, an isocyanate group, and a methacryloxy group, and s Represents an integer of 0 or 1 to 10, and R ¹¹ , R ¹² and R ¹³ each independently represents an alkyl group having 1 to 10 carbon atoms. Examples of the alkyl group having 1 to 10 carbon atoms include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, isopropyl group, and isobutyl group. Can be mentioned. As the alkyl group having 1 to 10 carbon atoms, a methyl group, an ethyl group, and a pentyl group are preferable because they are easily available. X is preferably an amino group, a glycidoxy group, a mercapto group, or an isocyanate group, and more preferably a glycidoxy group or a mercapto group, from the viewpoint of heat resistance. S in formula (B-1) is preferably 0 to 5, and more preferably 0 to 4 from the viewpoint of suppressing film fluidity during high heat and improving heat resistance.

  Preferred silane coupling agents include, for example, trimethoxyphenylsilane, dimethyldimethoxyphenylsilane, triethoxyphenylsilane, dimethoxymethylphenylsilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (2-methoxyethoxy) silane, N -(2-aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3 -Glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-isocyanatopropyltriethoxy Lan, 3-methacryloxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N- (1,3-dimethylbutylidene) -3- (triethoxysilyl) -1-propane Examples include amine, N, N′-bis (3- (trimethoxysilyl) propyl) ethylenediamine, polyoxyethylenepropyltrialkoxysilane, polyethoxydimethylsiloxane, and the like. Among these, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, and 3-mercaptopropyltrimethoxysilane are preferable, and trimethoxyphenylsilane, 3-glycidoxy Propyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane are more preferable. A silane coupling agent can be used individually by 1 type or in combination of 2 or more types.

  The amount of the coupling agent used is preferably 0.01 parts by weight or more and 50 parts by weight or less with respect to 100 parts by weight of the inorganic filler from the viewpoint of balancing the effect of improving heat resistance and storage stability. From 0.05 parts by weight to 20 parts by weight, more preferably from 0.5 parts by weight to 10 parts by weight from the viewpoint of improving heat resistance.

  The blending amount of the inorganic filler in the temporarily fixing resin composition according to the present embodiment is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and still more preferably 100 parts by mass or less, with respect to 100 parts by mass of all polymer components. . Although there is no restriction | limiting in particular in content of an inorganic filler, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of all high molecular weight components. By making content of an inorganic filler into the said range, a desired function can be provided, ensuring sufficient adhesiveness of the film-form temporary fixing material formed from the resin composition for temporary fixing.

  An organic filler can be further blended in the temporarily fixing resin composition according to the present embodiment. Examples of the organic filler include carbon, rubber filler, silicone fine particles, polyamide fine particles, and polyimide fine particles. The blending amount of the organic filler is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and still more preferably 100 parts by mass or less with respect to 100 parts by mass of the total high molecular weight component. Although there is no restriction | limiting in particular in content of an inorganic filler, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of all high molecular weight components.

  The temporarily fixing resin composition according to the present embodiment may be further diluted with an organic solvent as necessary. The organic solvent is not particularly limited, but can be determined in consideration of the volatility during film formation from the boiling point. Specifically, for example, a relatively low boiling point solvent such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, xylene is used during film formation. This is preferable in that the curing of the film does not proceed. For the purpose of improving the film-forming property, it is preferable to use a solvent having a relatively high boiling point such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, cyclohexanone. These solvents can be used alone or in combination of two or more.

  The solid content concentration of the temporarily fixing resin composition according to this embodiment is preferably 10% by mass or more and 80% by mass or less based on the total mass of the temporarily fixing resin composition.

  The temporarily fixing resin composition according to the present embodiment includes (A) a high molecular weight component including a first high molecular weight component and (B) a second high molecular weight component, and (C) a curing accelerator as necessary. (D) A silicone compound, an inorganic filler, an organic solvent, and other components can be mixed and kneaded. Mixing and kneading can be performed by appropriately combining dispersers such as a normal stirrer, a raking machine, a three-roller, and a bead mill.

[Temporary fixing resin film]
The temporarily fixing resin film according to the present embodiment is formed by forming the temporary fixing resin composition according to the present embodiment into a film shape.

  The temporarily fixing resin film according to the present embodiment can be easily manufactured by, for example, applying a temporarily fixing resin composition to a support film. Moreover, when the resin composition for temporary fixing is diluted with the organic solvent, it can manufacture by apply | coating this resin composition to a support film, and removing an organic solvent by heat drying.

  The temporary fixing resin film provided on the support film can be attached with a protective film as necessary. In this case, a temporary fixing resin film sheet having a three-layer structure composed of a support film, a temporary fixing resin film, and a protective film, which will be described later, can be obtained.

  The temporary fixing resin film sheet thus obtained can be easily stored by, for example, winding it into a roll. Moreover, a roll-shaped film can be cut out into a suitable size and stored in a sheet shape.

  FIG. 1A is a top view showing an embodiment of a resin film sheet for temporary fixing according to the present embodiment, and FIG. 1B is a schematic cross-sectional view taken along the line I-I in FIG. It is.

  A temporary fixing resin film sheet 1 shown in FIG. 1 includes a support film 10 having releasability, a temporary fixing resin film 20 provided on the supporting film 10, and a supporting film 10 of the temporary fixing resin film 20. Includes a protective film 30 provided on the opposite side.

  The support film 10 is not particularly limited, and examples thereof include polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyethylene, polypropylene, polyamide, and polyimide. Among these, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polypropylene, polyamide, and polyimide are preferable from the viewpoints of flexibility and toughness. In addition, from the viewpoint of improving releasability from the temporarily fixing resin film (resin layer), it is preferable to use as the support film a film that has been subjected to a release treatment with a silicone compound, a fluorine compound, or the like.

  The thickness of the support film 10 may be appropriately changed depending on the intended flexibility, but is preferably 3 μm or more and 250 μm or less. If it is 3 μm or more, the film strength is sufficient, and if it is 250 μm or less, sufficient flexibility is obtained. From such a viewpoint, the thickness of the support film 10 is more preferably 5 μm or more and 200 μm or less, and further preferably 7 μm or more and 150 μm or less.

  The thickness of the temporarily fixing resin film 20 of the present embodiment is not particularly limited, but is preferably 5 μm or more and 300 μm or less in thickness after drying. If it is 5 μm or more, the thickness is sufficient because the thickness is sufficient, and if it is 300 μm or less, the amount of residual solvent in the film can be easily reduced by sufficient drying. It is possible to reduce foaming when the cured product is heated.

  In the case of manufacturing a thick film, a previously formed film having a thickness of 100 μm or less may be bonded. By using the films bonded in this way, the residual solvent when producing a thick film can be reduced.

  Although there is no restriction | limiting in particular as the protective film 30, For example, a polyethylene terephthalate, a polybutylene terephthalate, a polyethylene naphthalate, polyethylene, a polypropylene etc. are mentioned. Among these, polyethylene terephthalate, polyethylene, and polypropylene are preferable from the viewpoints of flexibility and toughness. Further, from the viewpoint of improving the peelability from the temporarily fixing resin film (resin layer), it is preferable to use as the protective film a film that has been subjected to a release treatment with a silicone compound, a fluorine compound, or the like.

  The thickness of the protective film 30 can be appropriately set depending on the intended flexibility, but is preferably 10 μm or more and 250 μm or less. If it is 10 μm or more, the film strength is sufficient, and if it is 250 μm or less, sufficient flexibility is obtained. From such a viewpoint, the thickness of the protective film 30 is more preferably 15 μm or more and 200 μm or less, and further preferably 20 μm or more and 150 μm or less.

  FIG. 2 (A) is a top view showing another embodiment of the resin film sheet for temporary fixing according to the present invention, and FIG. 2 (B) is a schematic cross section taken along line II-II in FIG. 2 (A). FIG.

  The temporarily fixing resin film sheet 2 shown in FIG. 2 is the same as the temporarily fixing resin film sheet 1 except that the temporarily fixing resin film 20 and the protective film 30 are cut in advance according to the shape of the member to be temporarily fixed. It has the same configuration. In FIG. 2, the outer edge portions of the temporarily fixed resin film 20 and the protective film 30 that have been cut are removed, but the temporary fixing resin film and the protective film are notched according to the shape of the temporarily fixed member. And the outer edge may be left.

[Semiconductor wafer processing method]
The semiconductor wafer processing method according to the present embodiment is roughly divided into the following four steps. (A) a temporary fixing step of temporarily fixing the semiconductor wafer and the support through a film-like temporary fixing material, (b) a processing step of processing the semiconductor wafer temporarily fixed to the support, and (c) processing The separation process includes separating the separated semiconductor wafer from the support and the film-like temporary fixing material, and (d) a cleaning process for cleaning the semiconductor wafer when there is a residue.

  3A, 3B, and 3C are schematic cross-sectional views for explaining one embodiment of a method for processing a semiconductor wafer, and FIG. 3D is a semiconductor after processing. It is a top view which shows a wafer.

<(A) Temporary fixing step>
In FIG. 3A, a film-like temporary fixing material 40 formed from the temporary fixing resin composition or the temporary fixing resin film according to this embodiment is interposed between the support 50 and the semiconductor wafer 60. The process of temporarily fixing the semiconductor wafer 60 to the support body 50 is shown.

  The thickness of the semiconductor wafer 60 is not particularly limited, but can be 600 μm or more and 800 μm or less.

  When the temporarily fixing resin composition is used, the film-like temporarily fixing material 40 can be formed on the element forming surface of the semiconductor wafer 60 or on the support by a method such as spin coating. When the temporarily fixing resin composition is diluted with an organic solvent, after spin coating, depending on the volatilization conditions of the solvent, the organic solvent is removed by heating and drying to form a film-like temporarily fixing material 40 To do.

  When the temporary fixing resin film 20 is used, a film-like temporary fixing material is obtained by laminating the temporary fixing resin film 20 on the element forming surface or the support of the semiconductor wafer 60 using a roll laminator, a vacuum laminator, or the like. 40 can be provided.

  Next, the semiconductor wafer 60 on which the film-like temporary fixing material 40 is formed is set on a wafer bonding apparatus or a vacuum laminator, and the support 50 is pressed and pasted with a press. When the film-like temporary fixing material 40 is formed on the support 50 side, the support 50 provided with the film-like temporary fixing material 40 is set on a wafer bonding apparatus or a vacuum laminator, and the semiconductor wafer 60 Press and paste with a press.

  When using a wafer bonding apparatus, for example, using an EVG vacuum press EVG520IS (trade name), the pressure is 1 hPa or less, the pressure is 1 MPa, the pressure is 60 ° C. to 200 ° C., and the holding time is 100 seconds to 300 seconds. The semiconductor wafer 60 and the support 50 are temporarily fixed via a film-like temporary fixing material 40.

  In the case of using a vacuum laminator, for example, a vacuum laminator LM-50 × 50-S (trade name) manufactured by NPC Corporation, or a vacuum laminator V130 (trade name) manufactured by Nichigo Morton Co., Ltd. is used. Temperature 40 ° C. or higher and 180 ° C. or lower, preferably 60 ° C. or higher and 150 ° C. or lower, Laminating pressure 0.01 MPa or higher and 0.5 MPa or lower, preferably 0.1 MPa or higher and 0.5 MPa or lower, Holding time 1 second or longer and 600 seconds or shorter, preferably The semiconductor wafer 60 and the support body 50 are temporarily fixed via the film-like temporary fixing material 40 in 30 seconds or more and 300 seconds or less.

  After temporarily fixing the semiconductor wafer 60 and the support body 50 via the film-like temporary fixing material 40, the film-like temporary fixing material 40 is heated by heating at 100 ° C. to 200 ° C. for 5 minutes to 120 minutes. Perform heat curing.

  The material of the support in this embodiment is not particularly selected, but a substrate such as a silicon wafer, a glass wafer, or a quartz wafer can be used.

  The support of this embodiment may be subjected to a peeling treatment, and the peeling layer 52 is formed by peeling all or part of the surface of the support 50 as shown in FIG. The release agent used for the release treatment is not particularly limited. For example, a surface modifier having a fluorine element, a polyolefin wax and silicone oil, a silicone oil containing a reactive group, and a silicone-modified alkyd resin have excellent release properties. Therefore, it is preferable.

  When the film-like temporary fixing material having the above-described configuration is used, the semiconductor wafer can be processed at a high temperature using the support, and the temporary fixing resin composition is removed from the semiconductor wafer and the support at room temperature after the processing. It can be peeled without adhesive residue.

<(B) Processing step>
The processing steps include grinding, electrode formation, metal wiring formation, protective film formation and the like used at the wafer level. There is no restriction | limiting in particular in a grinding system, A well-known grinding system can be utilized. The grinding is preferably performed while cooling the semiconductor wafer and a grindstone (such as diamond) with water.

  For example, as shown in FIG. 3B, the back surface of the semiconductor wafer 80, that is, the surface opposite to the side in contact with the film-like temporary fixing material 70 of the semiconductor wafer 80 is ground by a grinder 90, for example, about 700 μm. The thickness is reduced to 100 μm or less.

  As an apparatus for grinding, for example, DGP-8761 (trade name) manufactured by DISCO Corporation can be cited, and the cutting conditions in this case can be arbitrarily selected according to the desired thickness and grinding state of the semiconductor wafer.

  Specifically, other processes include metal sputtering for forming electrodes, etc., wet etching for etching metal sputtering layers, application of resist for masking the formation of metal wiring, pattern formation by exposure / development, resist coating Known processes such as peeling, dry etching, formation of metal plating, silicon etching for TSV formation, and formation of an oxide film on the silicon surface can be mentioned.

  In FIG. 3C, processing such as dry ion etching or Bosch process is performed on the back side of the thinned semiconductor wafer 80 to form through holes, and then processing such as copper plating is performed to form through electrodes 82. An example is shown.

  In this way, predetermined processing is performed on the semiconductor wafer 80. FIG. 3D is a top view of the semiconductor wafer 80 after processing.

<(C) Separation process>
FIG. 4 is a schematic cross-sectional view for explaining an embodiment of a separation process for separating a processed semiconductor wafer from a support and a film-like temporary fixing material. The separation process according to this embodiment includes a first peeling process for peeling the semiconductor wafer from the support and a second peeling process for peeling the film-like temporary fixing material from the semiconductor wafer. The first peeling step is a step of peeling the semiconductor wafer processed in the processing step from the support, that is, a step of peeling the thinned semiconductor wafer from the support before dicing after various processing. It is. As the peeling method, a method of separating the two by sliding in the opposite direction along the horizontal direction while mainly heating the semiconductor wafer and the support (preferably 200 ° C. or more and 250 ° C. or less), and the semiconductor of the support A method in which one of the wafer and the support is fixed horizontally and the other is lifted at a certain angle from the horizontal direction, and a protective film is attached to the ground surface of the ground semiconductor wafer. The method of peeling from the support by a peel method, and the like can be mentioned, but can be employed without any particular limitation.

  In the present embodiment, one of the support semiconductor wafer 80 and the support 50 as shown in FIG. 4A is fixed horizontally, and the other is lifted at a certain angle from the horizontal direction, and A method of attaching a protective film to the ground surface of the ground semiconductor wafer and peeling the semiconductor wafer and the protective film by a peel method is more suitable. These peeling methods are usually performed at room temperature, but may be performed at a temperature at which there is no damage to the semiconductor wafer at about 40 ° C. or more and 100 ° C. or less. When mechanically disassembling, for example, an EVG De-Bonding device EVG805EZD is used.

  In the second peeling step, for example, as shown in FIG. 4B, the semiconductor wafer 80 is fixed horizontally, and the end of the film-like temporary fixing material 70 is set at a certain angle from the horizontal direction. By lifting, the semiconductor wafer 80 from which the film-like temporary fixing material is peeled can be obtained (see FIG. 4C). In this embodiment, a film-like temporary fixing material is formed using the temporary fixing resin composition according to this embodiment, so that a processed semiconductor wafer in which residues such as adhesive residue are sufficiently reduced can be easily obtained. Can get to.

  In the present embodiment, separation may be performed between the semiconductor wafer and the film-like temporary fixing material in the first peeling step.

<(D) Cleaning step>
A part of the temporarily fixed material tends to remain on the circuit forming surface of the semiconductor wafer. When a part of the temporarily fixing material remains on the circuit forming surface of the peeled semiconductor wafer, a cleaning step for removing the temporary fixing material can be provided. The temporary fixing material can be removed, for example, by washing the semiconductor wafer.

  The cleaning liquid used is not particularly limited as long as it is a cleaning liquid that can remove a partially remaining temporary fixing material, and examples thereof include the organic solvents that can be used for diluting the temporarily fixing resin composition. These organic solvents can be used individually by 1 type or in combination of 2 or more types.

  In addition, when it is difficult to remove the remaining temporary fixing material, bases and acids may be added to the organic solvent. Examples of bases that can be used include amines such as ethanolamine, diethanolamine, triethanolamine, triethylamine, and ammonia; and ammonium salts such as tetramethylammonium hydroxide. As the acids, organic acids such as acetic acid, oxalic acid, benzenesulfonic acid, and dodecylbenzenesulfonic acid can be used. The addition amount is preferably 0.01% by mass or more and 10% by mass or less in terms of the concentration in the cleaning liquid. In order to improve the removability of the residue, an existing surfactant may be added.

  Although there is no restriction | limiting in particular as a washing | cleaning method, For example, the method of washing | cleaning with a paddle using the said washing | cleaning liquid, the washing | cleaning method by spraying, and the method of immersing in a washing | cleaning-liquid tank are mentioned. The temperature is preferably 10 ° C. or higher and 80 ° C. or lower, and preferably 15 ° C. or higher and 65 ° C. or lower. Finally, the thin semiconductor wafer 80 is obtained by washing with water or alcohol and drying.

  As described above, according to the resin composition for temporary fixing according to this embodiment, residues such as adhesive residue can be sufficiently reduced, so that the cleaning step can be omitted.

  The processed semiconductor wafer 80 has through electrodes 82 formed in the same manner as described above, and is further divided into semiconductor elements by dicing along a dicing line 84.

  In the present embodiment, a semiconductor device can be manufactured by connecting the obtained semiconductor element to another semiconductor element or a semiconductor element mounting substrate.

  FIG. 5 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device. First, the semiconductor element 100 in which the through electrode 86 is formed and separated into pieces by the above-described method is prepared (FIG. 5A). Then, a semiconductor device 120 can be obtained by stacking a plurality of semiconductor elements 100 over the wiring substrate 110 (FIG. 5B).

  EXAMPLES Hereinafter, although an Example and a comparative example demonstrate this invention further more concretely, this invention is not limited to a following example.

[Synthesis of acrylic rubber P-1]
In a 500 cc separable flask equipped with a stirrer, a thermometer, a nitrogen displacement device (nitrogen inflow pipe), and a reflux condenser with a moisture receiver, 200 g of deionized water, 61 g of butyl acrylate, 19 g of methyl methacrylate, 20 g of glycidyl methacrylate, 1.94 g of 1.8% polyvinyl alcohol aqueous solution, 0.2 g of lauryl peroxide, and 0.06 g of n-octyl mercaptan were blended. Subsequently, N ₂ gas was blown into the flask for 60 minutes to remove the air in the system, and then the system temperature was raised to 65 ° C. to perform polymerization for 5 hours. Furthermore, the temperature inside the system was raised to 90 ° C., and stirring was continued for 2 hours to complete the polymerization. Transparent beads obtained by the polymerization reaction were separated by filtration, washed with deionized water, and then dried in a vacuum dryer at 50 ° C. for 6 hours to obtain acrylic rubber P-1. When the acrylic rubber P-1 was measured by GPC, the weight average molecular weight of the acrylic rubber P-1 was 400,000 in terms of polystyrene. Moreover, Tg of acrylic rubber P-1 was -10 degreeC.

  GPC was measured using GPC (Tosoh Corporation, SD-8022 / DP-8020 / RI-8020), tetrahydrofuran as the eluent, and Gelpack GL-A150-S / GL- from Hitachi Chemical Co., Ltd. as the column. A160-S was used, and the eluent flow rate was 1.0 mL / min and the column temperature was 40 ° C.

  Tg was measured by using differential scanning calorimetry (DSC) (manufactured by Rigaku Corporation, DSC8230) under conditions of a heating rate of 10 ° C./min and a measurement temperature of −80 to 80 ° C. The glass transition temperature in this case is a midpoint glass transition temperature calculated by a method based on JIS K 7121: 1987 from a change in calorific value.

[Synthesis of acrylic rubber P-2]
In a 500 cc separable flask equipped with a stirrer, a thermometer, a nitrogen displacement device (nitrogen inflow pipe), and a reflux condenser with a moisture receiver, 200 g of deionized water, 61 g of butyl acrylate, 19 g of methyl methacrylate, 20 g of glycidyl methacrylate, 1.94 g of 1.8% polyvinyl alcohol aqueous solution, 0.2 g of lauryl peroxide, and 0.03 g of n-octyl mercaptan were blended. Subsequently, N ₂ gas was blown into the flask for 60 minutes to remove the air in the system, and then the system temperature was raised to 65 ° C. to perform polymerization for 5 hours. Furthermore, the temperature inside the system was raised to 90 ° C., and stirring was continued for 2 hours to complete the polymerization. Transparent beads obtained by the polymerization reaction were separated by filtration, washed with deionized water, and then dried in a vacuum dryer at 50 ° C. for 6 hours to obtain acrylic rubber P-2. When the acrylic rubber P-2 was measured by GPC, the weight average molecular weight of the acrylic rubber P-2 was 700,000 in terms of polystyrene. Moreover, Tg of acrylic rubber P-2 was -10 degreeC.

(Examples 1-7, Comparative Examples 1-8)
[Preparation of varnish (resin composition for temporary fixation)]
A high molecular weight component, a silicone compound, a curing accelerator, a filler, and cyclohexanone were blended in the composition of parts by mass shown in Tables 1 and 2 to prepare varnishes.

[Preparation of temporarily fixing resin film]
The prepared varnish was applied onto a release-treated surface of a release-treated polyethylene terephthalate film (A31, thickness 38 μm, manufactured by Teijin DuPont Films Ltd.), and heated and dried at 90 ° C. for 10 minutes and 120 ° C. for 30 minutes. Then, a temporary fixing resin film with a protective film and a support film was obtained. The film thickness of the temporarily fixing resin film was adjusted to 30 μm. The following tests were performed using the prepared temporary fixing resin films of Examples 1 to 7 and Comparative Examples 1 to 8, and the evaluation results are shown in Tables 3 and 4.

[Film lamination on semiconductor wafers]
The temporarily fixing resin film with a support film was cut into a circular shape having a diameter 2 mm smaller than the diameter of the semiconductor wafer. After that, a resin film for temporary fixing is applied to a semiconductor wafer with irregularities having a width of 40 × 40 μm ² , a depth of 40 μm, and an interval of 100 μm using a vacuum laminator V130 manufactured by Nichigo Morton Co., Ltd. Lamination was performed at 0.5 MPa and a holding time of 60 seconds to obtain a semiconductor wafer with a resin film for temporary fixing.

[Crimp to support]
Using a vacuum laminator V130 manufactured by Nichigo Morton Co., Ltd., with a pressure of 1 hPa or less, a pressure bonding temperature of 100 ° C., a laminating pressure of 0.5 MPa, and a holding time of 100 seconds, a support with a release agent and a semiconductor wafer with a resin film for temporary fixing Crimped. Then, after hold | maintaining this for 30 minutes in the oven set to 110 degreeC, it hold | maintained in the oven set to 170 degreeC for 1 hour, and obtained the lamination sample.

[Low temperature sticking property and step embedding test]
After the film lamination to the semiconductor wafer and the pressure bonding to the support, the state of the temporarily fixing resin film and the embedding state of the unevenness were confirmed using an ultrasonic microscope (SAM) (Insight-300, manufactured by Insight Co., Ltd.). The low-temperature sticking property was evaluated as “◯” for a sample in which peeling of the temporarily fixing resin film was not observed, and “×” for a sample in which peeling was observed. The step embedment was evaluated as “◯” for samples in which irregularities were embedded without voids, and “×” for samples in which voids were seen.

[Back grinding test]
About the lamination sample which evaluation was "(circle)" in the low temperature sticking property and level | step difference embedding test, the surface of the semiconductor wafer in a lamination | stacking sample was ground using the full auto grinder polisher (the product made by DISCO Corporation, DGP-8761). . For the wheel, 1 axis: GF01-SDC320-BT300-50, 2 axis: IF-01-1-4 / 6-B · K09, 3 axis: DPEG-GA0001 were used. The chuck table rotation speed was 300 rpm, the wheel rotation speed was 1 axis: 3,200 rpm, 2 axis: 3,400 rpm, 3 axis: 1,400 rpm, and grinding was performed by a cross-feed method. The semiconductor wafer was ground to 142 μm thickness on one axis, and then ground to 100 μm thickness on three axes until it became 102 μm thickness on two axes. Samples in which no cracks or the like occurred at the end of grinding were evaluated as “◯”, and samples in which cracks or the like occurred were evaluated as “x”.

[Heat resistance test]
In the back grind test, the state of the temporarily fixed resin film was confirmed using an ultrasonic microscope (SAM, Insight-300, manufactured by Insight Co., Ltd.) for the laminated sample whose evaluation was “◯”. Thereafter, the laminated sample was left in an oven set at 200 ° C. for 2 hours, and further left in an oven set at 260 ° C. for 20 minutes. Subsequently, the state of the temporarily fixed resin film of the laminated sample was confirmed again using SAM. A sample in which peeling of the temporarily fixing resin film did not occur even when left in the oven was evaluated as “◯”, and a sample in which peeling occurred was evaluated as “x”.

[Peelability test from support]
In the heat resistance test, insert a pair of tweezers with a sharp tip between the support with mold release agent and the temporary fixing resin film for the laminated sample that was evaluated as “◯”, and insert the tweezers along the outer edge. I moved it. At this time, a sample that could be peeled off without breaking the semiconductor wafer was evaluated as “◯”, and a sample that could not be peeled off was evaluated as “x”.

[Peelability test from semiconductor wafer]
For the laminated sample that was evaluated as “◯” in the peelability test from the support, the end of the temporarily fixing resin film attached to the semiconductor wafer was lifted with tweezers. At this time, the sample that could peel the temporarily fixing resin film from the semiconductor wafer was evaluated as “◯”, and the sample that could not be peeled was evaluated as “x”.

[Temporary fixing material residue on semiconductor wafer surface]
The uneven surface of the semiconductor wafer that was evaluated as “◯” in the peelability test from the semiconductor wafer was observed with a microscope. At this time, the sample in which the residue of the temporary fixing material was not observed was evaluated as “◯”, and the sample in which the residue was observed was evaluated as “x”.

The detail of each component in Table 1 and Table 2 is as follows.
HTR-280-CHN: Acrylic rubber (manufactured by Nagase ChemteX Corporation) with a weight average molecular weight of 800,000 by GPC, Tg-28 ° C., and 8% by mass of a carboxyl group-containing monomer
P-1: GPC weight average molecular weight 400,000, Tg-10 ° C. acrylic rubber, epoxy group-containing monomer 20% by mass P-2: GPC weight average molecular weight 700,000 Tg-10 ° C. acrylic rubber, epoxy group Containing 20% by mass of monomer TA31-209E: Silicone-modified alkyd resin (manufactured by Hitachi Chemical Polymer Co., Ltd.)
SH550: Phenyl-modified silicone compound (manufactured by Dow Corning Toray)
SH3773M: polyether-modified silicone compound (manufactured by Dow Corning Toray)
2PZ-CN: Imidazole-based curing accelerator (manufactured by Shikoku Kasei Kogyo Co., Ltd.)
SC2050-SEJ: Surface treated silica filler (manufactured by Admatechs Co., Ltd.)

DESCRIPTION OF SYMBOLS 1 ... Temporary fixing resin film sheet, 2 ... Temporary fixing resin film sheet, 10 ... Support film, 20 ... Temporary fixing resin film, 30 ... Protection film, 40 ... Temporary fixing material, 50 ... Support, 52 ... Peeling Layers 60... Semiconductor wafer 70. Temporary fixing material 80. Semiconductor wafer 82. Through electrode 84. Dicing line 86 Dicing electrode 100 Semiconductor element 110 Wiring substrate 120 Semiconductor device

Claims (11)

Temporary fixing step of temporarily fixing a semiconductor wafer to a support via a film-like temporary fixing material, a processing step of processing the semiconductor wafer temporarily fixed to the support, and the support of the processed semiconductor wafer A resin composition for temporary fixing for forming the film-like temporary fixing material used in a method for processing a semiconductor wafer comprising: a separation step for separating the body and the film-like temporary fixing material;
The temporary fixing resin composition contains a high molecular weight component,
The high molecular weight component is (A) a first high molecular weight component having a weight average molecular weight (Mw (A)) of 100,000 or more and less than 600,000 and a glass transition temperature of −50 ° C. or more and 50 ° C. or less; B) a second high molecular weight component having a weight average molecular weight (Mw (B)) satisfying the following formula (1) and having a glass transition temperature of −50 ° C. or higher and 50 ° C. or lower; object.
Mw (B) −Mw (A) ≧ 100,000 (1)   The resin composition for temporary fixing according to claim 1, wherein the content of the component (A) is 50% by mass or more and 95% by mass or less based on the total mass of the high molecular weight component.   The resin composition for temporary fixing according to claim 1 or 2, wherein the component (A) is a (meth) acrylic copolymer containing a reactive group.   The resin composition for temporary fixing according to any one of claims 1 to 3, wherein the component (B) is a (meth) acrylic copolymer containing a reactive group. The (A) component and the (B) component are (meth) acrylic copolymers containing reactive groups,
The reactive group of any one (meth) acrylic copolymer is an epoxy group, and the reactive group of the other (meth) acrylic copolymer is a group capable of reacting with an epoxy group. The resin composition for temporary fixing as described in 2. The component (A) is a (meth) acrylic copolymer containing a reactive group,
The (meth) acrylic copolymer containing the reactive group has a (meth) acrylic monomer containing a reactive group as a monomer component constituting the copolymer, based on the total amount of the monomer component. The resin composition for temporary fixing according to any one of claims 1 to 5, wherein 1.0 to 40.0 mass% is blended. The component (B) is a (meth) acrylic copolymer containing a reactive group,
The (meth) acrylic copolymer containing the reactive group has a (meth) acrylic monomer containing a reactive group as a monomer component constituting the copolymer, based on the total amount of the monomer component. The resin composition for temporary fixing according to any one of claims 1 to 6, comprising 1.0% by mass or more and 40.0% by mass or less.   (C) The resin composition for temporary fixing as described in any one of Claims 1-7 which further contains a hardening accelerator.   (D) The resin composition for temporary fixing as described in any one of Claims 1-8 which further contains a silicone compound.   A temporarily fixing resin film formed by forming the temporarily fixing resin composition according to any one of claims 1 to 9 into a film shape.   A temporarily fixing resin film sheet comprising: a supporting film having releasability; and the temporarily fixing resin film according to claim 10 provided on the supporting film.

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