JP2018073968A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

Insulation between wires by separating metal particles from wires and adhering to resin bumps when removing at least a part of resin bumps between regions where a plurality of wires are arranged in a resin core bump by etching The manufacturing method of the semiconductor device which can suppress the fall of is provided. A method of manufacturing a semiconductor device includes a step (a) of forming a resin protrusion by placing a resin material on a main surface of a semiconductor substrate and baking the resin material, and a plurality of processes extending on the resin protrusion. A step (b) of forming a wiring; a step (c) of forming a photoresist covering the plurality of wirings; a step (d) of etching a part of the resin protrusion using the photoresist as a mask; Scrubber cleaning the main surface (e). [Selection] Figure 11

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof.

  In order to flip-chip mount a semiconductor device on a base substrate, a resin core bump (resin core bump) is provided as a connection terminal of the semiconductor device in place of a conventional gold bump or solder bump. In the formation of the resin core bump, generally, after forming a plurality of wirings on the resin protrusions to be the core, using the wirings as a mask, at least one of the resin protrusions between the regions where the wirings are arranged is used. The part is removed by etching.

  As a related technique, Patent Document 1 discloses a semiconductor device using a resin core bump in which a conductive layer is formed on a resin protrusion as an external terminal. The semiconductor device manufacturing method includes a step of forming a resin layer above the semiconductor substrate 10 having the electrode pad 16 and the passivation film 18, a step of forming the resin protrusion 40 by curing the resin layer, and the electrode pad 16. Forming a conductive layer 50 that is electrically connected to the resin protrusion 40 and passes above the resin protrusion 40. Here, after forming the conductive layer 50, the resin protrusions 40 may be partially removed by etching using the conductive layer 50 as a mask. Accordingly, for example, when the semiconductor device is mounted on the base substrate using an adhesive, the dischargeability of the adhesive can be improved.

JP 2007-19104 (abstract, paragraph 0035, FIGS. 10 to 12)

  In the manufacturing process of the semiconductor device, when a part of the resin protrusion is removed by etching, the wiring (conductive layer) is also etched. The metal particles that have been etched and separated from the wiring are redeposited on the surface of the resin protrusions and become deposits (also called deposits). Therefore, after etching the resin protrusion, the deposit generated by the etching is removed by scrubber cleaning.

  However, since the metal particles adhering to the vicinity of the edge of the resin protrusion are difficult to remove by scrubber cleaning, the metal particles adhering between the plurality of wirings may remain and the insulation between the wirings may be reduced. Further, removing at least a part of the resin protrusion between the regions where the plurality of wirings are arranged improves the adhesive discharging property when the semiconductor device is mounted, but the strength of the resin core bump may be insufficient.

  In some embodiments of the present invention, when at least a part of the resin protrusions between regions where a plurality of wirings are arranged in the resin core bump is removed by etching, the metal particles are separated from the wirings and adhere to the resin protrusions. This relates to providing a method of manufacturing a semiconductor device that can suppress a decrease in insulation between wirings due to the above. In addition, some aspects of the present invention relate to providing a semiconductor device in which the strength of the resin core bump is improved while securing the dischargeability of the adhesive during mounting.

  The method for manufacturing a semiconductor device according to the first aspect of the present invention includes a step (a) of forming a resin protrusion by disposing a resin material on a main surface of a semiconductor substrate and baking the resin material, and extending on the resin protrusion. A step (b) of forming a plurality of existing wires, a step (c) of forming a photoresist covering the plurality of wires, and a step (d) of etching a part of the resin protrusion using the photoresist as a mask, And (e) scrubber cleaning the main surface of the semiconductor substrate.

  According to the first aspect of the present invention, a part of the resin protrusion is etched using the photoresist covering the plurality of wirings of the resin core bump as a mask. Therefore, when removing at least a part of the resin protrusion between the regions where the plurality of wirings are arranged in the resin core bump by etching, the metal particles are separated from the wiring and adhere to the resin protrusions so that the wiring is not etched. Therefore, it is possible to suppress a decrease in insulation between the wirings.

  Here, the step (c) may include forming a photoresist on at least a plurality of wirings. Accordingly, the width of the groove formed in the resin protrusion by etching can be increased as much as possible, and the adhesive discharging property can be improved when the semiconductor device is mounted.

  Alternatively, the step (c) may include forming a photoresist on a region wider than a region where a plurality of wirings are arranged on the resin protrusion. As a result, the maximum width of the support portion configured by the resin protrusions remaining without being etched and supporting the wiring can be made larger than the width of the wiring, and the strength of the resin core bump can be improved.

  In that case, the step (d) may include etching a part of the resin protrusions so that the resin protrusions located below the plurality of wirings are not side-etched. Thereby, the minimum width of the support portion can be made larger than the width of the wiring, and the strength of the resin core bump can be further improved.

  Alternatively, the semiconductor substrate may have a plurality of pads surrounded by a passivation film, and the step (c) may include forming a photoresist from the periphery of the plurality of pads to the resin protrusions. Thereby, it is possible to prevent the wiring from being etched by completely covering the region where the plurality of wirings are arranged with the photoresist.

  The method of manufacturing a semiconductor device according to the second aspect of the present invention includes a step (a) of forming a resin protrusion by disposing a resin material on a main surface of a semiconductor substrate and baking the resin material, and extending onto the resin protrusion. A step (b) of forming a plurality of existing wirings, a step (c) of forming a photoresist covering the edge of the resin protrusion between the regions where the plurality of wirings are arranged, and a mask for the plurality of wirings and the photoresist. And a step (d) of etching a part of the resin protrusion and a step (e) of scrubber cleaning the main surface of the semiconductor substrate.

  According to the second aspect of the present invention, a part of the resin protrusion is etched using a photoresist covering the edge of the resin protrusion, which is difficult to remove deposits by scrubber cleaning, as a part of the mask. Therefore, when removing at least a part of the resin protrusion between the regions where the plurality of wirings are arranged in the resin core bump by etching, even if the wiring is etched, the metal particles are separated from the wiring and adhere to the resin protrusion. Therefore, it is possible to suppress a decrease in insulation between the wirings.

  In the above, the semiconductor device manufacturing method may further include a step (f) of removing the photoresist after the step (e). Thereby, the deposit attached to the photoresist by etching can be lifted off.

  The step (b) may include forming a plurality of wirings including a seed layer and a gold conductive layer. In that case, when removing at least part of the resin protrusions between the regions where a plurality of wirings are arranged in the resin core bump by etching, the gold particles are separated from the conductive layer and attached to the resin protrusions. It is possible to suppress a decrease in insulating properties.

  A semiconductor device according to a third aspect of the present invention includes a semiconductor substrate, a resin protrusion disposed on the main surface of the semiconductor substrate, and a plurality of wirings extending on the resin protrusion, and a part of the resin protrusion The supporting portion configured to support the wiring has a first width equal to or larger than the width of the wiring on the semiconductor substrate side, and a second width larger than the first width on the wiring side.

  According to the third aspect of the present invention, the support portion has a shape protruding in a hook shape from both sides of the wiring and stably supports the wiring, while ensuring the dischargeability of the adhesive on the semiconductor substrate side. . Therefore, it is possible to provide a semiconductor device in which the strength of the resin core bump is improved while ensuring the dischargeability of the adhesive during mounting.

1 is a plan view illustrating a configuration example of a semiconductor device according to an embodiment of the present invention. Sectional drawing which shows the mounting process of the semiconductor device shown in FIG. Sectional drawing which expands and shows a part of semiconductor device in III-III shown in FIG. FIG. 6 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment. FIG. 6 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment. FIG. 6 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment. FIG. 6 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment. FIG. 6 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment. FIG. 6 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment. FIG. 6 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment. FIG. 6 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment. FIG. 6 is a process cross-sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment. FIG. 6 is a plan view for explaining a method for manufacturing a semiconductor device according to a second embodiment. Sectional drawing which expands and shows a part of semiconductor device in XIV-XIV shown in FIG. FIG. 15 is an enlarged cross-sectional view of a part of the semiconductor device shown in FIG. 14 after etching. FIG. 6 is a plan view for explaining a method for manufacturing a semiconductor device according to a third embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, the same referential mark is attached | subjected to the same component and the overlapping description is abbreviate | omitted.
<Semiconductor device>
FIG. 1 is a plan view showing a configuration example of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a mounting process of the semiconductor device shown in FIG. FIG. 2 shows a cross section of the semiconductor device taken along line II-II shown in FIG. As shown in FIGS. 1 and 2, the semiconductor device 1 includes a semiconductor substrate 10, a resin protrusion 11 disposed on the main surface (the surface shown in FIG. 1) of the semiconductor substrate 10, and the resin protrusion 11 extending on the semiconductor substrate 10. A plurality of wirings 12 are included.

  The semiconductor substrate 10 may be a semiconductor chip, for example. The semiconductor substrate 10 has a plurality of pads (electrodes) 10a surrounded by a passivation film 10b. In addition, an active element such as a transistor or a diode, a passive element such as a resistor or a capacitor, or a circuit 10 c including a wiring electrically connected to the active element or the passive element is formed on the semiconductor substrate 10.

  For example, a transistor has a gate electrode disposed on a silicon substrate via a gate insulating film, and a source and a drain which are impurity regions formed in the silicon substrate on both sides of the gate electrode. In addition, a wiring layer including a plurality of wirings is disposed on the silicon substrate via an interlayer insulating film, and the interlayer insulating film and the wiring layer may have a multilayer structure as necessary.

  Part of the wiring of the circuit 10c constitutes a pad 10a. FIG. 1 shows 18 pads 10a arranged in two rows in the vertical direction in the figure, but the number of rows and the number of pads 10a are arbitrary. The wiring of the circuit 10c includes, for example, aluminum (Al) or copper (Cu).

In order to protect the circuit 10c, a passivation film 10b having an opening provided at a position corresponding to the pad 10a is disposed on the wiring layer. The passivation film 10b is made of an insulating film such as silicon nitride (Si ₃ N ₄ ) or silicon dioxide (SiO ₂ ).

  The resin protrusion 11 disposed on the semiconductor substrate 10 is, for example, a polyimide resin, a silicone-modified polyimide resin, an epoxy resin, a silicone-modified epoxy resin, benzocyclobutene (BCB), polybenzoxazole (PBO), or And made of a resin such as a phenolic resin.

  The plurality of wirings 12 arranged on the semiconductor substrate 10 and the resin protrusion 11 are respectively connected to the plurality of pads 10a and electrically connected to the circuit 10c through the pads 10a. The wiring 12 includes, for example, a seed layer such as titanium tungsten (TiW) and a conductive layer such as gold (Au) disposed on the seed layer.

  As shown in FIG. 2, an electronic module is configured by flip-chip mounting the semiconductor device 1 on a base substrate 2. The base substrate 2 includes a plurality of connection pads 21 arranged on the main surface (upper surface in the drawing). The adhesive 3 is arranged on the main surface of the base substrate 2, and the semiconductor device 1 is mounted on the base substrate 2 so that the plurality of wirings 12 are electrically connected to the connection pads 21. As the adhesive 3, for example, an epoxy or acrylic thermoplastic resin or the like is used. A thermoplastic resin can be molded by being softened by heating, and has a property of solidifying when cooled.

  For example, the adhesive 3 is disposed in a region inside the two rows of connection pads 21 on the main surface of the base substrate 2. Next, the semiconductor device 1 is placed on the base substrate 2, and the semiconductor device 1 is pressed against the base substrate 2 while softening the adhesive 3 by heating. It is desirable that the softened adhesive 3 spreads to a region outside the two rows of resin protrusions 11 of the semiconductor device 1 when the semiconductor device 1 is pressed against the base substrate 2. When the electronic module is cooled in this state, the adhesive 3 is solidified and the semiconductor device 1 is fixed to the base substrate 2.

  Alternatively, the position of the semiconductor device 1 and the base substrate 2 shown in FIG. 2 may be reversed, and the adhesive 3 may be disposed on the inner surface of the two rows of resin protrusions 11 on the main surface of the semiconductor substrate 10. Next, the base substrate 2 is placed on the semiconductor device 1, and the base substrate 2 is pressed against the semiconductor device 1 while softening the adhesive 3 by heating. When the base substrate 2 is pressed against the semiconductor device 1, the softened adhesive 3 is preferably spread to a region outside the two rows of resin protrusions 11 of the semiconductor device 1. When the electronic module is cooled in this state, the adhesive 3 is solidified and the semiconductor device 1 is fixed to the base substrate 2.

  3 is an enlarged cross-sectional view of a part of the semiconductor device taken along line III-III shown in FIG. As shown in FIG. 3, at least a part of the resin protrusions 11 between the areas where the plurality of wirings 12 are arranged is removed to form a plurality of grooves 11a, and one side of the resin protrusions 11 surrounded on both sides by the grooves 11a. The portion constitutes a support portion 11 b that supports the wiring 12.

  In this manner, by forming the plurality of grooves 11a in the resin protrusion 11, the adhesive discharging property and the resin core bump compression characteristic at the time of mounting are adjusted. For example, the height H of the resin protrusion 11 disposed on the passivation film 10b is in the range of 13 μm to 28 μm, and the depth D of the groove 11a formed in the resin protrusion 11 is in the range of 5 μm to 10 μm. is there.

  In the present embodiment, the support portion 11b configured by a part of the resin protrusion 11 and supporting the wiring 12 has a first width W1 equal to or larger than the width W0 of the wiring 12 on the semiconductor substrate 10 side. On the 12th side, the second width W2 is larger than the first width W1. As a result, the support portion 11b has a shape protruding in a hook shape from both sides of the wiring 12 to stably support the wiring 12, while ensuring dischargeability of the adhesive on the semiconductor substrate 10 side. Therefore, it is possible to provide the semiconductor device 1 in which the strength of the resin core bump is improved while securing the adhesive dischargeability during mounting.

<Semiconductor Device Manufacturing Method 1>
Next, a method for manufacturing a semiconductor device according to the first embodiment of the present invention will be described.
4 to 12 are process cross-sectional views illustrating the method for manufacturing the semiconductor device according to the first embodiment of the present invention. 4 to 12 show a partial cross section of the semiconductor device taken along line II-II shown in FIG.

  In the first step, as shown in FIG. 4, a semiconductor substrate 10 having a plurality of pads 10a surrounded by a passivation film 10b is prepared. The details of the semiconductor substrate 10 are as described with reference to FIGS. 1 and 2.

  Next, in the second step, the resin protrusion 11 is formed by disposing and baking the resin material on the main surface of the semiconductor substrate 10. For example, by applying a liquid photosensitive resin material (for example, photosensitive polyimide) on the main surface of the semiconductor substrate 10 and performing exposure and development by a photolithography technique, as shown in FIG. Resin material 11c is arranged on the main surface. Thereafter, the semiconductor substrate 10 is heat-treated, and the resin material 11c is baked to form the resin protrusions 11 serving as the cores of the resin core bumps as shown in FIG.

  Next, in a third step, a plurality of wirings 12 that are electrically connected to the plurality of pads 10 a and extend on the resin protrusion 11 are formed. For example, as shown in FIG. 7, a seed layer 12a such as titanium tungsten (TiW) is formed on the entire main surface of the semiconductor substrate 10 by sputtering, and further a conductive material such as gold (Au) is formed on the seed layer 12a. Layer 12b is formed.

  Thereafter, as shown in FIG. 8, a photoresist PH1 having a desired wiring pattern is formed on the conductive layer 12b by a photolithography technique. Using this photoresist PH1 as a mask, the conductive layer 12b other than the wiring region is removed by etching.

  Further, the photoresist PH1 damaged by etching is peeled off, and the seed layer 12a other than the wiring region is removed by etching using the conductive layer 12b in the wiring region as a mask. As a result, as shown in FIG. 9, a plurality of wirings 12 including the patterned seed layer 12a and the conductive layer 12b and constituting the connection terminals of the semiconductor device are formed.

  Next, in a fourth step, as shown in FIG. 10, a photoresist PH2 that covers the plurality of wirings 12 is formed. Next, in the fifth step, a part of the resin protrusion 11 is etched using the photoresist PH2 as a mask. Thereby, as shown in FIG. 11, a groove 11 a is formed in the resin protrusion 11.

  As the etching in the fifth step, for example, reactive ion etching (RIE) which is a kind of dry etching is used. Reactive ion etching enables anisotropic etching unlike ordinary dry etching.

  The film thickness of the photoresist PH2 formed in the fourth step is determined in consideration of the ratio of the etching rate with the resin material constituting the resin protrusion 11. For example, when the etching rate ratio between the photoresist PH2 and the resin material is 3: 1, the thickness of the photoresist PH2 needs to be 15 μm or more in order to etch the resin material by 5 μm.

  Next, in the sixth step, the main surface of the semiconductor substrate 10 is scrubber cleaned. For example, by depositing a semiconductor device in a cleaning device and performing cleaning by spraying a solvent such as water as a cleaning liquid, deposits attached to the main surface of the semiconductor substrate 10 are removed by etching. Next, in the seventh step, the photoresist PH2 is removed. Thereby, the deposit attached to the photoresist PH2 by etching can be lifted off. As a result, a semiconductor device as shown in FIG. 12 is obtained.

  According to the manufacturing method of the semiconductor device according to the first embodiment, a part of the resin protrusion 11 is etched using the photoresist PH2 covering the plurality of wirings 12 of the resin core bump as a mask. Accordingly, when at least a part of the resin protrusion 11 between the regions where the plurality of wirings 12 are arranged in the resin core bump is removed by etching, the metal particles are separated from the wirings 12 so that the wirings 12 are not etched. A decrease in insulation between the wirings 12 due to adhering to the protrusions 11 can be suppressed.

  For example, when a plurality of wirings 12 including a seed layer 12a and a gold conductive layer 12b are formed, at least a part of the resin protrusions 11 between regions where the plurality of wirings 12 are arranged in the resin core bump is removed by etching. In this case, it is possible to suppress a decrease in insulation between the wirings 12 due to the gold particles separating from the conductive layer 12b and adhering to the resin protrusions 11.

  In the fourth step, a photoresist PH2 may be formed on at least the plurality of wirings 12. Accordingly, the width of the groove 11a (FIG. 3) formed in the resin protrusion 11 by etching can be increased as much as possible, and the adhesive discharging property can be improved when the semiconductor device is mounted. For example, in consideration of an alignment error between the plurality of wirings 12 and the photoresist PH2, the photoresist PH2 is positioned so that the edge of the photoresist PH2 is on the outer side of the edges of the plurality of wirings 12 on average by about 5 μm. May be formed.

  Alternatively, in the fourth step, the photoresist PH2 may be formed on a region wider than the region where the plurality of wirings 12 are arranged on the resin protrusion 11. Thereby, the maximum width of the support portion 11b (FIG. 3) configured by the resin protrusion 11 remaining without being etched and supporting the wiring 12 is made larger than the width of the wiring 12, thereby improving the strength of the resin core bump. Can do.

  In that case, in the fifth step, a part of the resin protrusion 11 may be etched to such an extent that the resin protrusion 11 positioned below the plurality of wirings 12 is not side-etched. Thereby, the minimum width of the support part 11b (FIG. 3) can be made larger than the width of the wiring 12, and the strength of the resin core bump can be further improved.

  Alternatively, in the fourth step, the photoresist PH2 may be formed from the periphery of the plurality of pads 10a to the resin protrusion 11. Thereby, the photoresist PH2 completely covers the region where the plurality of wirings 12 are arranged, and the wirings 12 can be prevented from being etched.

<Semiconductor Device Manufacturing Method 2>
Next, a method for manufacturing a semiconductor device according to the second embodiment of the present invention will be described. In the second embodiment, the first step to the third step are the same as those in the first embodiment, and thus the description thereof is omitted.

  FIG. 13 is a plan view for explaining the method for manufacturing a semiconductor device according to the second embodiment of the present invention. FIG. 14 is an enlarged view of a part of the semiconductor device in the XIV-XIV shown in FIG. It is sectional drawing shown. In the fourth step, as shown in FIGS. 13 and 14, a photoresist PH3 is formed to cover the edge of the resin protrusion 11 between the regions where the plurality of wirings 12 are formed.

  Next, in the fifth step, a part of the resin protrusion 11 is etched using the plurality of wirings 12 and the photoresist PH3 as a mask. Thereby, as shown in FIG. 15, a groove 11 a is formed in the resin protrusion 11. As the etching in the fifth step, for example, reactive ion etching is used.

  When part of the resin protrusion 11 is removed by etching, the wiring 12 is also etched. However, since the edge of the resin protrusion 11 between the regions where the plurality of wirings 12 are formed is covered with the photoresist PH3, the wiring The metal particles are not redeposited at the edge of the resin protrusion 11 between the regions where the wirings 12 are formed.

  Next, in the sixth step, the main surface of the semiconductor substrate 10 is scrubber cleaned. Thereby, the deposit including the metal particles attached to the main surface of the semiconductor substrate 10 by etching is removed. Further, in the seventh step, the photoresist PH3 is removed. Thereby, the deposit including the metal particles attached to the photoresist PH3 by etching can be lifted off.

  According to the method of manufacturing a semiconductor device according to the second embodiment, the photoresist PH3 that covers the edge of the resin protrusion 11 in which the deposit is difficult to be removed by scrubber cleaning is used as a part of the mask. A part is etched. Therefore, when removing at least part of the resin protrusions 11 between the regions where the plurality of wirings 12 are arranged in the resin core bump by etching, even if the wirings 12 are etched, the metal particles are separated from the wirings 12 and the resin protrusions. 11 can suppress a decrease in insulation between the wirings 12 due to adhesion to the wiring 11.

  For example, when a plurality of wirings 12 including a seed layer 12a and a gold conductive layer 12b are formed, at least a part of the resin protrusions 11 between regions where the plurality of wirings 12 are arranged in the resin core bump is removed by etching. In this case, it is possible to suppress a decrease in insulation between the wirings 12 due to the gold particles separating from the conductive layer 12b and adhering to the resin protrusions 11.

<Semiconductor Device Manufacturing Method 3>
FIG. 16 is a plan view for explaining the method for manufacturing the semiconductor device according to the third embodiment of the present invention. In the third embodiment, the shape of the photoresist PH3 formed in the fourth step is different from that in the second embodiment.

  That is, the photoresist PH3 is not formed on the plurality of wirings 12 in FIG. 13, but the photoresist PH3 is also formed on the plurality of wirings 12 in FIG. Thereby, the shape of the photoresist PH3 becomes continuous, and the edge of the resin protrusion 11 can be covered without a gap. In other respects, the third embodiment may be the same as the second embodiment.

  The present invention is not limited to the embodiments described above, and many modifications can be made within the technical idea of the present invention by those having ordinary knowledge in the technical field. For example, it is possible to combine a plurality of embodiments selected from the embodiments described above.

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Base substrate, 3 ... Adhesive, 10 ... Semiconductor substrate, 10a ... Pad, 10b ... Passivation film, 10c ... Circuit, 11 ... Resin protrusion, 11a ... Groove, 11b ... Support part, 11c ... Resin Materials: 12 ... wiring, 12a ... seed layer, 12b ... conductive layer, 21 ... connection pad, PH1 to PH3 ... photoresist

Claims (9)

A step (a) of forming a resin protrusion by disposing and baking a resin material on the main surface of the semiconductor substrate;
A step (b) of forming a plurality of wirings extending on the resin protrusion;
Forming a photoresist covering the plurality of wirings (c);
Etching part of the resin protrusions using the photoresist as a mask (d);
Scrubber cleaning the main surface of the semiconductor substrate (e);
A method for manufacturing a semiconductor device comprising:   The method of manufacturing a semiconductor device according to claim 1, wherein step (c) includes forming a photoresist on at least the plurality of wirings.   The method of manufacturing a semiconductor device according to claim 1, wherein step (c) includes forming a photoresist on a region wider than a region where the plurality of wirings are arranged on the resin protrusion.   4. The method of manufacturing a semiconductor device according to claim 3, wherein step (d) includes etching part of the resin protrusions such that the resin protrusions located below the plurality of wirings are not side-etched. 5.   The semiconductor substrate has a plurality of pads surrounded by a passivation film, and the step (c) includes forming a photoresist from the periphery of the plurality of pads to the resin protrusion. Semiconductor device manufacturing method. A step (a) of forming a resin protrusion by disposing and baking a resin material on the main surface of the semiconductor substrate;
A step (b) of forming a plurality of wirings extending on the resin protrusion;
Forming a photoresist covering an edge of the resin protrusion between the regions where the plurality of wirings are disposed;
Etching part of the resin protrusions using the plurality of wirings and the photoresist as a mask (d);
Scrubber cleaning the main surface of the semiconductor substrate (e);
A method for manufacturing a semiconductor device comprising:   The method for manufacturing a semiconductor device according to claim 1, further comprising a step (f) of removing the photoresist after the step (e).   The method of manufacturing a semiconductor device according to claim 1, wherein the step (b) includes forming a plurality of wirings including a seed layer and a gold conductive layer. A semiconductor substrate;
A resin protrusion disposed on the main surface of the semiconductor substrate;
A plurality of wires extending on the resin protrusion;
A support portion configured to support a part of the resin protrusion and having a first width equal to or larger than the width of the wiring on the semiconductor substrate side, and the first width on the wiring side. A semiconductor device having a second width larger than the first width.

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