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JP2018059205A - バイポーラマグネトロンスパッタリングのための方法及びマグネトロンスパッタリング装置 - Google Patents

バイポーラマグネトロンスパッタリングのための方法及びマグネトロンスパッタリング装置 Download PDF

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Publication number
JP2018059205A
JP2018059205A JP2017193956A JP2017193956A JP2018059205A JP 2018059205 A JP2018059205 A JP 2018059205A JP 2017193956 A JP2017193956 A JP 2017193956A JP 2017193956 A JP2017193956 A JP 2017193956A JP 2018059205 A JP2018059205 A JP 2018059205A
Authority
JP
Japan
Prior art keywords
magnetron
bipolar
substrate
sputtering
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017193956A
Other languages
English (en)
Japanese (ja)
Inventor
ホルガー，プロエール
Proehl Holger
フランク，ベネケ
Benecke Frank
トーマス，ニーダーハウゼン
Niederhausen Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Von Ardenne GmbH
Original Assignee
Von Ardenne GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Von Ardenne GmbH filed Critical Von Ardenne GmbH
Publication of JP2018059205A publication Critical patent/JP2018059205A/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2017193956A 2016-10-05 2017-10-04 バイポーラマグネトロンスパッタリングのための方法及びマグネトロンスパッタリング装置 Pending JP2018059205A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016118799.2A DE102016118799B4 (de) 2016-10-05 2016-10-05 Verfahren zum Magnetronsputtern
DE102016118799.2 2016-10-05

Publications (1)

Publication Number Publication Date
JP2018059205A true JP2018059205A (ja) 2018-04-12

Family

ID=61623597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017193956A Pending JP2018059205A (ja) 2016-10-05 2017-10-04 バイポーラマグネトロンスパッタリングのための方法及びマグネトロンスパッタリング装置

Country Status (3)

Country Link
JP (1) JP2018059205A (zh)
CN (1) CN107916406B (zh)
DE (1) DE102016118799B4 (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005121394A1 (ja) * 2004-06-07 2005-12-22 Ulvac, Inc. マグネトロンスパッタリング方法及びマグネトロンスパッタリング装置
JP2006299412A (ja) * 2005-03-25 2006-11-02 Bridgestone Corp Ｉｎ−Ｇａ−Ｚｎ−Ｏ膜の成膜方法
JP2007186774A (ja) * 2006-01-16 2007-07-26 Bridgestone Corp 成膜方法及び装置
JP2008240110A (ja) * 2007-03-28 2008-10-09 Ulvac Japan Ltd 金属とチタン酸化物の混合膜の成膜方法及び同膜の成膜装置
JP2010180432A (ja) * 2009-02-03 2010-08-19 Sumitomo Metal Mining Co Ltd 酸化物誘電体膜の製造方法とデユアルカソードマグネトロンスパッタリング装置
WO2012095961A1 (ja) * 2011-01-12 2012-07-19 日新電機株式会社 プラズマ装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6026283B2 (ja) * 1977-09-16 1985-06-22 キヤノン株式会社 薄膜発熱抵抗体の製造方法
DD252205B5 (de) 1986-09-01 1993-12-09 Fraunhofer Ges Forschung Zerstaeubungseinrichtung
DE4106770C2 (de) 1991-03-04 1996-10-17 Leybold Ag Verrichtung zum reaktiven Beschichten eines Substrats
DE19740793C2 (de) 1997-09-17 2003-03-20 Bosch Gmbh Robert Verfahren zur Beschichtung von Oberflächen mittels einer Anlage mit Sputterelektroden und Verwendung des Verfahrens
DE10318364A1 (de) 2003-04-23 2004-11-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Einrichtung zum Beschichten eines stationär angeordneten Substrats durch Puls-Magnetron-Sputtern
EP2477207A3 (en) 2004-09-24 2014-09-03 Zond, Inc. Apparatus for generating high-current electrical discharges
DE102006021994B4 (de) 2006-05-10 2017-08-03 Cemecon Ag Beschichtungsverfahren
US8940140B2 (en) * 2007-09-05 2015-01-27 Uchicago Argonne, Llc Thin film application device and method for coating small aperture vacuum vessels
CN101691651B (zh) * 2009-10-10 2011-07-27 西安交通大学 一种InGaZnO透明导电薄膜的L-MBE制备方法
CN102140623A (zh) * 2010-02-02 2011-08-03 深圳市海森应用材料有限公司 Izao透明导电膜的制造方法
EP2428994A1 (en) * 2010-09-10 2012-03-14 Applied Materials, Inc. Method and system for depositing a thin-film transistor
US20120180858A1 (en) * 2011-01-13 2012-07-19 General Electric Company Method for making semiconducting film and photovoltaic device
CN102320838A (zh) * 2011-05-10 2012-01-18 孔伟华 柔性透明导电膜用金属氧化物半导体材料及其制备方法
CN102646715A (zh) * 2011-12-29 2012-08-22 京东方科技集团股份有限公司 薄膜晶体管及其制造方法
CN105239047A (zh) * 2015-10-08 2016-01-13 福建省诺希科技园发展有限公司 一种高导电性igzo溅射靶材的制备方法及其产品

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005121394A1 (ja) * 2004-06-07 2005-12-22 Ulvac, Inc. マグネトロンスパッタリング方法及びマグネトロンスパッタリング装置
JP2006299412A (ja) * 2005-03-25 2006-11-02 Bridgestone Corp Ｉｎ−Ｇａ−Ｚｎ−Ｏ膜の成膜方法
JP2007186774A (ja) * 2006-01-16 2007-07-26 Bridgestone Corp 成膜方法及び装置
JP2008240110A (ja) * 2007-03-28 2008-10-09 Ulvac Japan Ltd 金属とチタン酸化物の混合膜の成膜方法及び同膜の成膜装置
JP2010180432A (ja) * 2009-02-03 2010-08-19 Sumitomo Metal Mining Co Ltd 酸化物誘電体膜の製造方法とデユアルカソードマグネトロンスパッタリング装置
WO2012095961A1 (ja) * 2011-01-12 2012-07-19 日新電機株式会社 プラズマ装置

Also Published As

Publication number Publication date
CN107916406A (zh) 2018-04-17
DE102016118799A1 (de) 2018-04-05
CN107916406B (zh) 2021-12-24
DE102016118799B4 (de) 2022-08-11

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