JP2018056284A - Vertical resonator type light-emitting element module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vertical resonator type surface emitting laser module which suppresses generation of bright spots in an object to be irradiated and eliminates color unevenness. SOLUTION: In a vertical resonator type light emitting element module 10A in which a plurality of vertical resonator type light emitting elements 10 are arranged on a plane, a plurality of vertical resonator type light emitting elements are a plurality of vertical resonator type light emitting elements on a substrate 11. The light beams emitted from the light emitting elements adjacent to each other are arranged so that at least a part of the light beams overlaps on the emission direction side and the light beams propagate, and a plurality of vertical resonator type light emitting elements are emitted. The wavelengths of the light beams emitted from the elements adjacent to each other are different from each other, or the polarization or the polarization ratio of the light beams is different from each other. [Selection diagram] Fig. 2

Description

  The present invention relates to a vertical resonator type light emitting device such as a vertical cavity surface emitting laser (VCSEL), and more particularly to a vertical resonator type in which a plurality of vertical resonator type light emitting devices are arranged on a plane. The present invention relates to a surface emitting laser module.

  A vertical cavity surface emitting laser is a semiconductor laser having a structure that resonates light perpendicular to a substrate surface and emits light in a direction perpendicular to the substrate surface. For example, Patent Document 1 includes an n-type GaN buffer layer, an AlN layer / GaN layer DBR (Distributed Bragg Reflector) layer and an n-type GaN cladding layer formed on an n-type GaN substrate, and is provided on the cladding layer. An InGaN layer / GaN multi-quantum well active layer and a p-type GaN cladding layer are formed on the cylindrical protrusion, and a dielectric DBR layer is formed in the center of the cladding layer. On the layer, an insulating film of silicon nitride and a p-electrode are formed around the dielectric DBR layer, and an n-electrode is formed on the insulating film formed so as to cover the side surface of the convex portion. A vertical cavity surface emitting laser is disclosed. The DBR layers facing each other across the light emitting layer and the opening of the convex portion constitute a resonator. Further, Patent Document 1 discloses that a vertical cavity surface emitting laser module (hereinafter also referred to as a surface emitting laser array) in which a plurality of vertical cavity surface emitting lasers are arranged on a plane has a circular vertical shape. A shape in which resonator type surface emitting lasers are arranged is disclosed.

  Patent Document 2 discloses a technique for coupling a surface emitting laser array to a fiber with a microlens array and a focus lens through a light conversion component.

  Patent Document 3 discloses a technique for controlling a far beam spot distribution by irradiating a beam including a plurality of laser emitters onto a substrate including a phosphor.

JP-A-2014-7093 Special Table 2015-510273 Publication Special table 2015-501062 gazette

  However, as a result of experiments in the prior art, it has been found that when a plurality of laser beams are irradiated to a phosphor or the like through a lens array or directly, a bright spot is generated on the phosphor or an object to be irradiated. These bright spots cause color unevenness and have a problem that they are difficult to handle, particularly as an illumination light source. As a result of investigating the cause, it was found that it depends on interference from multiple laser beams. In particular, in a surface emitting laser array, this phenomenon occurs remarkably because it is emitted at the same wavelength because it is formed on the same wafer through the same crystal growth and electrode process.

  The present invention has been made in view of the above points, and provides a vertical cavity surface emitting laser module that can suppress generation of bright spots and eliminate color unevenness even when a vertical cavity light emitting element is used. It is aimed.

The vertical cavity surface emitting laser module of the present invention is a vertical cavity type light emitting element module in which a plurality of vertical cavity type light emitting elements are arranged on a plane,
Each of the plurality of vertical resonator light emitting elements includes a first reflector, a first semiconductor layer of a first conductivity type, an active layer, and a second conductivity type opposite to the first conductivity type. A semiconductor structure layer made of a conductive second semiconductor layer, a current confinement layer, a transparent electrode in contact with the second semiconductor layer, and a second reflector formed on the transparent electrode,
The light beams emitted from adjacent ones of the plurality of vertical cavity light emitting elements have different wavelengths or have different polarizations or polarization ratios of the light beams.

  According to the present invention, in a light source configuration using a plurality of vertical resonator light emitting elements, even if a part of each light beam light overlaps with another light beam light, By changing the shape of the light emitting part between adjacent ones, generation of bright spots can be suppressed, and a vertical cavity surface emitting laser module free from color unevenness can be provided.

1 is a partially transparent schematic plan view schematically showing a surface emitting laser module configuration in which surface emitting lasers according to an embodiment of the present invention are arrayed. It is a fragmentary sectional view which shows typically the part of the cross section along the AA line of FIG. It is a schematic side view which shows the example which combined the surface emitting laser module of the Example of this invention with fluorescent substance, and injected the laser beam into fluorescent substance. It is a schematic side view showing an example in which the surface emitting laser module according to the embodiment of the present invention is coupled to a phosphor through a lens array and laser light is incident on the phosphor through the lens array. 1 is a schematic side view showing an example in which a surface emitting laser module according to an embodiment of the present invention is coupled to a phosphor through a lens array and a condenser lens, and laser light is incident on the phosphor through a lens array and a condenser lens. FIG. It is a schematic side view which shows the example which formed the lens array in the back surface of the board | substrate of the surface emitting laser module of the Example of this invention, and injected the laser beam into the fluorescent substance through the lens array. It is a schematic side view which shows the example which formed the lens array in the back surface of the board | substrate of the surface emitting laser module of the Example of this invention, and entered the fluorescent substance through the lens array and the condensing lens. It is a partially transparent schematic plan view for demonstrating the structure of the opening part of the surface emitting laser of the surface emitting laser module which is Example 1 of this invention. It is a partially transparent schematic plan view for demonstrating the structure of the opening part of the surface emitting laser of the surface emitting laser module which is Example 1 of this invention. It is a partially transparent schematic plan view for demonstrating the structure of the opening part of the surface emitting laser of the surface emitting laser module which is Example 1 of this invention. It is a partially transparent schematic plan view for demonstrating the structure of the opening part of the surface emitting laser of the surface emitting laser module which is Example 1 of this invention. It is a partially transparent schematic plan view for demonstrating the structure of the opening part of the surface emitting laser of the surface emitting laser module which is Example 2 of this invention. It is a partially transparent schematic plan view for demonstrating the structure of the opening part of the surface emitting laser of the surface emitting laser module which is Example 2 of this invention. It is a partially transparent schematic plan view for demonstrating the structure of the opening part of the surface emitting laser of the surface emitting laser module which is Example 3 of this invention. It is a partially transparent schematic plan view for demonstrating the structure of the opening part of the surface emitting laser of the surface emitting laser module which is Example 3 of this invention. It is a schematic plan view of the patterning mask which covers the transparent electrode used for manufacture of the surface emitting laser module of the Example of this invention. It is a schematic perspective view explaining a part of a surface emitting laser module according to a modification of the embodiment of the present invention.

  A vertical cavity surface emitting laser (hereinafter also simply referred to as a surface emitting laser) will be described with reference to the drawings as an example of the vertical cavity light emitting device of the present invention. In the following description and the accompanying drawings, substantially the same or equivalent parts will be described with the same reference numerals.

  FIG. 1 is an external view of a surface emitting laser module 10A in which a surface emitting laser (VCSEL) 10 as an example of an embodiment according to the present invention is used as a light emitting unit, and 12 (4 × 3) are arranged (arranged). FIG. 2 shows a partially transparent schematic plan view of FIG. The twelve surface emitting lasers have the same structure on the same substrate. FIG. 2 is a partial cross-sectional view schematically showing a cross-sectional portion along line AA of two adjacent surface emitting lasers 10 in FIG.

  As shown in FIG. 2, the surface emitting laser 10 includes a conductive first reflector 13 and an n-type semiconductor, which are sequentially formed on a conductive substrate 11 such as GaN made of GaN (gallium nitride), for example. It has a stacked structure including a layer 15 (first semiconductor layer), an active layer 17 including a quantum well layer, and a p-type semiconductor layer 19 (second semiconductor layer). The semiconductor structure layer SMC composed of the first reflector 13 and the n-type semiconductor layer 15, the active layer 17 including the quantum well layer, and the p-type semiconductor layer 19 in the stacked structure is made of a GaN-based semiconductor.

  The surface emitting laser 10 further includes an insulating current confinement layer 21, a conductive transparent electrode 23, and a second reflector 25, which are sequentially formed on the p-type semiconductor layer 19 of the semiconductor structure layer SMC. Have.

  The current confinement layer 21 has a through opening OP1. The transparent electrode 23 is formed so as to cover the through opening OP <b> 1 and contact the p-type semiconductor layer 19. The current confinement layer 21 prevents current injection into the p-type semiconductor layer 19 except for the through opening OP1. Inside the opening OP <b> 1, current is injected from the transparent electrode 23 into the active layer 17 through the p-type semiconductor layer 19.

  As shown in FIG. 2, the P electrode 27P for injecting current is formed so as to be electrically connected to the transparent electrode 23 around the through opening OP1. Further, as shown in FIG. 1, the P electrode 27P is formed so as to be independently connected to the p pad electrode 29P that can be electrically connected to the outside through the wiring 27Pa on the current confinement layer 21. . 1 is formed so as to be electrically connected to the n-type semiconductor layer 15 shown in FIG. 2 through a path (not shown).

  A portion of the first reflector 13 and the second reflector 25 facing each other across the through opening OP1 and the active layer 17 shown in FIG.

  A through-opening portion OP1 (an interface between the transparent electrode 23 and the semiconductor structure layer SMC) of the current confinement layer formed immediately below the transparent electrode 23 between the resonators 20 corresponds to a light beam passage opening. The transparent electrode 23 inside the opening OP1 is a window that performs functions of current injection and light beam emission. The light beam is emitted from the second reflector 25 through the window. A light beam is emitted along the optical axis that penetrates the through opening OP1 in the stacking direction of the semiconductor structure layer SMC.

  In this embodiment, the first reflector 13 is formed as a distributed Bragg reflector (DBR) made of a multilayer film of GaN-based semiconductor. As the first reflector 13, for example, a plurality of GaN / InAlN pairs can be stacked. The second reflector 25 has an area covering the through opening OP1, and is formed as a distributed Bragg reflector composed of a multilayer of dielectric films. The second reflector 25 and the first reflector 13 sandwich the semiconductor structure layer SMC and the transparent electrode 23 to form a resonant structure. The first reflector 13 and the second reflector 25 have the number of pairs of multilayer films in which two thin films having different refractive indexes are alternately laminated a plurality of times in order to obtain their desired conductivity, insulation, and reflectance. The material, the film thickness and the like are appropriately adjusted. In the case of an insulating reflector, for example, dielectric thin film materials include oxides such as metals and metalloids.

The semiconductor structure layer SMC includes an n-type semiconductor layer 15, an active layer 17 including a quantum well layer, and a p-type semiconductor layer 19 that are sequentially formed on the first reflector 13. In this embodiment, each of the first reflector 13 and the semiconductor structure layer SMC has a composition of Al _x In _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). Have For example, the first reflector 13 has a structure in which a pair of a low refractive index semiconductor layer having a composition of AlInN and a high refractive index semiconductor layer having a composition of GaN are alternately stacked a plurality of times. In this embodiment, the active layer 17 has a quantum well structure in which pairs of well layers (not shown) having an InGaN composition and barrier layers (not shown) having a GaN composition are alternately stacked. Have. The n-type semiconductor layer 13 has a GaN composition and contains Si as an n-type impurity. The p-type semiconductor layer 19 has a GaN composition and contains a p-type impurity such as Mg. As a result, the n-type semiconductor layer 13 and the p-type semiconductor layer 19 have opposite conductivity types. In addition, the semiconductor structure layer SMC can be designed so that the emission wavelength is, for example, 400 to 450 nm.

  The first reflector 13 and the semiconductor structure layer SMC are formed using a metal organic chemical vapor deposition (MOCVD) method or the like.

Examples of the composition material of the current confinement layer 21 include oxides such as SiO ₂ , Ga ₂ O ₃ , Al ₂ O ₃ , and ZrO ₂ , and nitrides such as SiN, AlN, and AlGaN. Preferably, SiO ₂ is used for the current confinement layer 21. The film thickness of the current confinement layer 21 is 5 to 1000 nm, preferably 10 to 300 nm.

As the translucent composition material of the conductive transparent electrode 23, for example, ITO (Indium Tin Oxide), IZO (In-doped ZnO), AZO (Al-doped ZnO), GZO (Ga-doped ZnO), ATO ( Sb-doped SnO ₂ ), FTO (F-doped SnO ₂ ), NTO (Nb-doped TiO ₂ ), ZnO or the like is used. Preferably, ITO is used for the transparent electrode 23. The film thickness of the transparent electrode 23 is 3 to 100 nm, and preferably 20 nm or less. The transparent electrode 23 can be formed by electron beam evaporation, sputtering, or the like.

  As shown in FIG. 2, in the surface emitting laser module 10A, a plurality of surface emitting lasers 10 are arranged so as to emit a light beam in a direction perpendicular to the substrate plane, but are arranged on the light beam emitting direction side. The optical conversion component 111 can also be included. Examples of the light conversion component 111 include a phosphor, a diffusion plate, a lens, or a combination thereof. The light conversion component 111 is fixed to the substrate 11 using a bonding agent with a spacer (not shown) interposed between the lower surface thereof and the substrate 11 (current confinement layer 21). Further, the light conversion component 111 may be fixed to the substrate 11 by screwing or the like without using a bonding agent.

  The twelve surface emitting lasers 10 arranged on the substrate 11 of the surface emitting laser module 10A shown in FIG. 2 have at least light beams emitted from adjacent ones on the emission direction side. The light beams propagate through some of them. The surface emitting laser module 10A is configured such that the wavelengths of the light beams emitted from the adjacent surface emitting lasers 10 are different from each other. For example, the resonator lengths L1 and L2 between the first reflector 13 and the second reflector 25 of the two adjacent surface emitting lasers 10 shown in FIG. 2 are different from each other (L1 <L2), and resonant. The wavelengths of the emitted light beams are different from each other.

  Here, a configuration example of the surface emitting laser module 10A which is a target in this embodiment will be described with reference to FIGS.

  FIG. 3 is a schematic side view showing an example in which the surface emitting laser module 10A is coupled to the phosphor 111 (light conversion component) and laser light is incident on the phosphor 111. Each laser beam (broken line) is incident on the phosphor 111 while being diverged, and a part of the laser beam is overlapped with another laser beam. The light conversion component 111 has a plurality of intervals D at which at least a part of the light beams emitted from adjacent ones of the plurality of surface emitting lasers 10 are incident on each other in the emission direction side. It arrange | positions with respect to the surface emitting laser 10. FIG.

  FIG. 4 is a schematic side view showing an example in which a lens array 111a (consisting of a set of microlenses) is further introduced between the surface emitting laser module 10A having the configuration shown in FIG. As described above, the surface emitting laser light is incident on the lens array 111a while being diverged, so that the lens array 111a and the phosphor 111 overlap the other laser light. Corresponding to each optical axis of the surface emitting laser 10, each of the microlenses of the lens array 111a is arranged.

  FIG. 5 is a schematic side view showing an example in which a condensing lens 111b is further introduced between the lens array 111a and the phosphor 111 configured as shown in FIG. In this case, almost all of the laser light overlaps with the phosphor 111.

  FIG. 6 is a schematic side view showing an example in which a lens array 111a is formed on the back surface of the substrate of the surface emitting laser module 10A. As in FIG. 4, a part of each laser beam overlaps with the lens array 111 a and the phosphor 111.

  FIG. 5 is a schematic side view showing an example in which a condensing lens 111b is further introduced between the lens array 111a and the phosphor 111 configured as shown in FIG. Also in this case, a part of the lens array 111a overlaps, and a lot of laser light overlaps on the surface of the phosphor 111.

  As described above, when a plurality of laser beams are incident on a light conversion component such as the phosphor 111 and the lens array 111a, at least a part of the individual laser beams is configured to overlap other beams. The present invention is a configuration target of the present invention, and can be a target other than the examples described above. Moreover, although the illustrated lens array 111a and the surface emitting laser 10 are arranged periodically, an array (arrangement) with an out of period may be used. In the case of a lens array, the lens radius and sag of the microlens are unified. It does not have to be. In the illustrated lens array 111a, the distance between the focal length of the microlens and the light emitting point of the surface emitting laser 10 may be the same or different.

  Next, each embodiment will be described with reference to FIGS. FIGS. 8 to 15 show 12 surface-emitting lasers (4 × 4) of this embodiment, showing only the opening OP1 (internal transparent electrode) responsible for current injection and light beam radiation as the positions of the surface-emitting lasers. 3) is a partially transparent schematic plan view of a surface emitting laser module 10A arranged in an aligned manner.

  FIG. 8 shows a surface emitting laser module 10A in which each of the openings OP1 of the surface emitting laser is a circle having the same diameter. FIG. 9 shows a surface emitting laser module 10A in which each of the openings OP1 of the surface emitting laser has the same square shape. The surface emitting laser module 10A shown in FIGS. 8 and 9 is configured such that the wavelengths of the light beams emitted from the adjacent surface emitting lasers 10 with which the beams overlap each other are different from each other. For example, the adjacent surface emitting lasers 10 have different resonator lengths L1 and L2 between the first reflector 13 and the second reflector 25 of the two adjacent surface emitting lasers 10 shown in FIG. L1 <L2), and the resonated light beams have different wavelengths.

  In the embodiment of the present invention, even if the resonator length between the first and second reflectors of the adjacent surface emitting lasers with which the beams overlap is the same, at least the size of the adjacent surface emitting laser elements is used. By changing the (opening portion OP1), the wavelength of the emitted light beams can be different from each other. FIG. 10 shows a surface emitting laser module 10A in which the adjacent circular radii of the opening OP1 of the surface emitting laser with which the beams overlap are different. FIG. 11 shows a surface emitting laser module 10A in which the area of adjacent squares of the opening OP1 of the surface emitting laser where the beams overlap is different. As described above, the areas of the through openings OP1 in the adjacent elements are different from each other, whereby the drive current density is changed, the refractive index of each layer of each surface emitting laser can be changed, and the optical length (which determines the resonance wavelength) By changing (refractive index × film thickness), variations in oscillation wavelength can be increased. If the emission wavelength (resonance wavelength) of each surface emitting laser can be changed, bright spots can be suppressed. The sizes exemplified in FIGS. 10 and 11 are changed at least for the surface emitting lasers adjacent to each other. However, the sizes may be changed not only for the adjacent surface emitting lasers but also for other surface emitting lasers. .

  In Example 2, the shape of the through opening OP1 between adjacent surface emitting lasers with which beams overlap each other has a long side and a short side or a long axis and a short axis, and the extending directions of the long side or the long axis are different from each other. Thus, the surface emitting laser module 10A is configured. FIG. 12 shows a surface emitting laser module 10A in which the same elliptical major axes adjacent to each other in the opening OP1 of the surface emitting laser with which the beams overlap are different in extension direction. FIG. 13 shows a surface emitting laser module 10A in which the extending directions of adjacent long sides of the same rectangular shape of the opening OP1 of the surface emitting laser with which the beams overlap are different from each other. In this way, by changing the arrangement angle of the ellipse or rectangle (long side or long axis extension direction), the type of polarized light (p-polarized light, s-polarized light) and the polarization ratio can be controlled. Laser beams with different polarizations can suppress bright spots even if they overlap. 12 and 13 exemplify an ellipse and a rectangle, but in this embodiment, the shape of the opening OP1 of the surface emitting laser is a long part such as a long side or a long axis and a short part such as a short side or a short axis. It may be a shape including a shape (a shape other than a circle). In the present embodiment, the rotation angle in the extending direction of the long side or the long axis of the adjacent opening OP1 is 90 °, but other angles may be used. Furthermore, in the present embodiment, the size of the opening OP1 of at least the adjacent surface emitting lasers may be changed as in the examples of FIGS. 10 and 11 of the first embodiment.

In the third embodiment, the surface emitting laser module 10A is configured in which the areas of the through-opening portions OP1 and the shapes of the surface emitting lasers adjacent to each other where the beams overlap are different from each other. FIG. 14 shows a surface emitting laser module 10A in which the opening OP1 of the surface emitting laser with which the beams overlap is an adjacent circle and ellipse. FIG. 15 shows a surface emitting laser module 10A in which the opening OP1 of the surface emitting laser with which the beams overlap is an adjacent rectangle and square. As shown in FIGS. 14 and 15, at least the aspect ratio of the shape of the opening OP1 of the adjacent surface emitting laser is different. By changing to such a shape, the drive current density can be changed, and by changing the optical length (refractive index × film thickness) that determines the resonance wavelength, variations in the oscillation wavelength can be increased. Furthermore, in this embodiment, the type of polarized light and the ratio of p-polarized light and s-polarized light can be changed. Thus, bright spots can be suppressed by changing the oscillation wavelength and polarization or polarization ratio of each surface emitting laser. In FIG. 14 and FIG. 15, a circular, elliptical pattern, square, and rectangular pattern are used, but other configurations such as a polygonal pattern may be used. Furthermore, in the present embodiment, the size of the opening OP1 of at least the adjacent surface-emitting laser may be changed as in the example of FIGS. 10 and 11 of the first embodiment, and the example of FIGS. 12 and 13 of the second embodiment. As described above, the rotation angle in the extending direction of the long side or the long axis of the opening OP1 of at least the adjacent surface emitting lasers may be changed.
[Concrete example]
In the specific example, an example similar to the structure of FIG. 2 in which the optical length is changed (physically) in the layer direction with at least adjacent surface emitting laser elements will be described.

  A method of manufacturing the surface emitting laser module 10A is as follows. Parts corresponding to the structure of FIG. 2 are shown in parentheses. First, a 40-pair semiconductor multilayer film of an Si-doped base n-GaN (3 μm) (not shown) and an n-GaN / AlInN layer on the n-GaN substrate 11 by metal organic vapor phase epitaxy (MOVPE). : A distributed Bragg reflector (first reflector 13) is formed. At this time, each layer of the first reflector 13 has a value obtained by dividing 1/4 of the oscillation wavelength by the refractive index of the semiconductor. This makes it possible to form a highly reflective mirror.

  After that, a Si-doped n-GaN (440 nm) (n-type semiconductor layer 15), a triple quantum well active layer (active layer 17) composed of a pair of GaInN (4 nm) and GaN (5 nm), and Mg-doped AlGaN An electron barrier layer (not shown) and a p-GaN layer (50 nm) (p-type semiconductor layer 19) are continuously formed.

  Thereafter, etching is performed up to a part of the n-type semiconductor layer 15, leaving a portion corresponding to the surface emitting laser 10. Thereafter, an insulating film (current confinement layer 21) is formed and patterned, and then an ITO opening diameter (20 μm) (through opening OP1) is formed. Thereafter, an opening pattern (transparent electrode 23) is formed on the insulator film (current confinement layer 21).

  The opening pattern (transparent electrode 23) is arrayed in a circular pattern corresponding to FIG. After the formation of the transparent electrode 23, the ITO electrode (transparent electrode 23) is covered with a resist with a patterning mask M painted in color as shown in FIG. Then, a part of the ITO electrode is removed by etching (L1 <L2 in FIG. 2 is defined).

Thereafter, 10 pairs of dielectric DBR (Nb ₂ O ₅ / Al ₂ O ₃ ) (second reflector 25) are formed on the ITO electrode, and then a p-electrode and an n-electrode are formed.

By changing the process in this manner, at least the thickness of the ITO electrode of the adjacent surface emitting laser can be changed. A surface emitting laser with a thick ITO electrode has a long resonance wavelength (L2 in FIG. 2) and oscillates on the long wave side, and a thin surface emitting laser with an ITO electrode has a long resonance wavelength (L1 in FIG. 2). Oscillates with short waves. In this way, variations in the oscillation wavelength can be increased by changing the optical length (refractive index × film thickness) that determines the resonance wavelength of each surface emitting laser. If the wavelength of each laser beam can be changed, bright spots can be suppressed. The variation of the oscillation wavelength is preferably within 10 nm so as not to be recognized as unevenness of the emission color.
[Modification]
FIG. 17 is a schematic perspective view illustrating a part of a surface emitting laser module according to a modification of the embodiment of the present invention.

  In the above embodiment, the case where the light emitting portion of the surface emitting laser 10 is mounted so as to be above (face up) the GaN substrate 11 is shown. However, the light emitting portion of the surface emitting laser 10 is below the substrate 11 (face down). It is preferable to mount so that. By doing so, the heat of the heat generating portion can be directly radiated to the mounting substrate 31, and at the same time, the heat can be radiated from the substrate side of the surface emitting laser 10 through the heat radiating member 109. For this reason, it becomes possible to efficiently dissipate heat from above and below the surface emitting laser 10, and a surface emitting laser module having excellent heat dissipation can be provided.

  As shown in FIG. 17, the phosphor glass plate 30 is attached to the substrate 11 (first reflector 13) side of the surface emitting laser module 10 </ b> A via a heat dissipation member 109. Then, a corresponding p connection electrode and a corresponding n corresponding to the p pad electrode and the n pad electrode of the surface emitting laser module 10A are mounted on the mounting surface of the mount substrate 31 made of a high thermal conductive material such as Si, AlN, SiC (not shown). An electrode provided with connection electrodes 31P and 31N is prepared. Then, the surface emitting laser module of the white light source is obtained by flip-chip mounting the semiconductor structure layer SMC (second reflector, p pad electrode and n pad electrode) side of the surface emitting laser module 10A on the mounting surface of the mount substrate 31. It is done. From the viewpoint of heat dissipation efficiency and wiring design, it is preferable to use an Au—Sn eutectic layer for the mounting method. Applications of the present invention include general illumination lamps including automobile headlamps.

  In addition, although the surface emitting laser of the above-described embodiment is configured to have the conductive first reflecting mirror, the first reflecting mirror may be made nonconductive as long as the conductivity with the n-type semiconductor layer 15 is obtained. Furthermore, as a surface emitting laser, a light emitting element using a tunnel junction or a light emitting element having a current confinement layer of an insulating layer between semiconductor layers can be employed in the present invention. Moreover, although each element was connected independently in the said Example, it is good also as a structure which connects each element in parallel. Further, although the plurality of surface emitting lasers of the above embodiment are aligned at a specific period, the plurality of surface emitting lasers may be arranged at random.

  In any of the embodiments of the present invention, the active layer 17 can also be applied to a surface emitting laser configured to have an active layer 17 having a multiple quantum well (MQW) structure. . Further, although the case where the semiconductor structure layer SMC is made of a GaN (gallium nitride) based semiconductor has been described, the crystal system is not limited to this. Further, the above-described embodiments may be appropriately modified and combined. Furthermore, in addition to the surface emitting lasers of the above embodiments, the present invention can be applied to a vertical cavity light emitting element module using an SLD (Superluminescent diode) or the like as a vertical cavity light emitting element.

10 surface emitting laser 13 first reflector 15 n-type semiconductor layer (first semiconductor layer)
17 active layer 19 p-type semiconductor layer (second semiconductor layer)
21 current confinement layer 23 transparent electrode 25 second reflector 27P P electrode 29P p pad electrode 29N n pad electrode OP1 through opening SMC semiconductor structure layer

Claims (9)

A vertical resonator type light emitting element module in which a plurality of vertical resonator type light emitting elements are arranged on a plane,
Each of the plurality of vertical resonator light emitting elements includes a first reflector, a first semiconductor layer of a first conductivity type, an active layer, and a second conductivity type opposite to the first conductivity type. A semiconductor structure layer made of a conductive second semiconductor layer, a current confinement layer, a transparent electrode in contact with the second semiconductor layer, and a second reflector formed on the transparent electrode,
The vertical resonator characterized in that the wavelengths of the light beams emitted from adjacent ones of the plurality of vertical resonator light emitting elements are different from each other, or the polarization or polarization ratio of the light beams are different from each other. Type light emitting device module.   2. The optical length or resonator length between the first reflector and the second reflector in adjacent ones of the plurality of vertical resonator light emitting elements is different from each other. A vertical resonator type light emitting device module according to claim 1. The current confinement layer is an insulating layer stacked on the second semiconductor layer,
The transparent electrode includes a through opening formed in the current confinement layer and penetrating the current confinement layer, and the second semiconductor through the through opening and the through opening laminated to cover the through opening and the current confinement layer. Touching the layer,
3. The vertical resonator type light emitting element module according to claim 1, wherein areas of the through openings in adjacent ones of the plurality of vertical resonator type light emitting elements are different from each other. The current confinement layer is an insulating layer stacked on the second semiconductor layer,
The transparent electrode includes a through opening formed in the current confinement layer and penetrating the current confinement layer, and the second semiconductor through the through opening and the through opening laminated to cover the through opening and the current confinement layer. Touching the layer,
4. The vertical resonator type light emitting device according to claim 1, wherein shapes of the through openings in adjacent ones of the plurality of vertical resonator type light emitting devices are different from each other. 5. module. The current confinement layer is an insulating layer stacked on the second semiconductor layer,
The transparent electrode includes a through opening formed in the current confinement layer and penetrating the current confinement layer, and the second semiconductor through the through opening and the through opening laminated to cover the through opening and the current confinement layer. Touching the layer,
The through-openings of the plurality of vertical resonator light emitting elements have a shape having a long side and a short side or a long axis and a short axis, and the plurality of vertical resonator type light emitting elements include the plurality of vertical resonators. 5. The light emitting device according to claim 1, wherein the long sides of the through-opening portions or the long axes of adjacent ones of the type light emitting elements are arranged to be different from each other. A vertical resonator type light emitting device module according to claim 1. The current confinement layer is an insulating layer stacked on the second semiconductor layer,
The transparent electrode includes a through opening formed in the current confinement layer and penetrating the current confinement layer, and the second semiconductor through the through opening and the through opening laminated to cover the through opening and the current confinement layer. Touching the layer,
6. The vertical resonator type light emitting element module according to claim 1, wherein the through-openings of the plurality of vertical resonator type light emitting elements have a rectangular, polygonal or elliptical shape. .   The vertical resonator type light emitting element module according to any one of claims 1 to 6, wherein the plurality of vertical resonator type light emitting elements are formed to have the same structure on the same substrate.   The plurality of vertical resonators are spaced at intervals such that at least a part of light beams emitted from adjacent ones of the plurality of vertical resonator light emitting elements are overlapped on the emission direction side. The vertical resonator type light emitting element module according to claim 1, further comprising a light conversion component arranged for the type light emitting element.   The light conversion component includes a phosphor, a diffusing plate, a lens, or a combination thereof, and each of the lenses is a microlens arranged corresponding to each optical axis of the plurality of vertical resonator light emitting elements. The vertical resonator type light emitting element, which is a lens array composed of a set and has a distance between a light emitting point of each of the plurality of vertical resonator type light emitting elements and a corresponding microlens or a focal length of the microlens adjacent to each other. The vertical resonator type light emitting device module according to claim 8, wherein the sets of microlenses are different from each other.

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