JP2017118599A - Piezoelectric drive device and manufacturing method thereof, motor, robot, and pump - Google Patents

Abstract

A piezoelectric driving device capable of achieving high output is provided. A piezoelectric driving device includes a plurality of vibrating units, the vibrating units comprising a vibrating plate, a first electrode layer provided above the vibrating plate, and a first electrode layer provided above the first electrode layer. a second electrode layer provided above the piezoelectric layer; a first wiring layer electrically connected to the second electrode layer; the first electrode layer; and a first insulating layer provided above the second electrode layer, wherein the upper surface of the first insulating layer and the upper surface of the first wiring layer are continuous, and the plurality of vibrating units are and a piezoelectric driving device arranged so as to overlap in a direction perpendicular to a plate surface of the diaphragm. [Selection drawing] Fig. 4

Description

  The present invention relates to a piezoelectric drive device and a manufacturing method thereof, a motor, a robot, and a pump.

  An ultrasonic motor that drives a driven body by vibrating a vibrating body with a piezoelectric element is used in various fields because a magnet and a coil are not required (see, for example, Patent Document 1).

JP-A-8-237971

  For example, when a motor is constituted by a piezoelectric driving device to generate power, one of basic requirements is to increase driving force (output). As an example, in the apparatus disclosed in Patent Document 1 described above, an attempt is made to increase the output by using a stack structure.

  However, when stacking (stacking) vibration units in which piezoelectric elements are formed on the surface of the plate-like member, for example, adjacent vibration units are bonded using an adhesive or the like, but if the flatness of the vibration unit is poor, There may be a space between adjacent vibration units. For this reason, there is a case where vibration transmission loss occurs between adjacent vibration units, and a sufficiently high output cannot be achieved.

  One of the objects according to some aspects of the present invention is to provide a piezoelectric driving device capable of achieving high output. Another object of some aspects of the present invention is to provide a method of manufacturing a piezoelectric driving device capable of achieving high output. Another object of some embodiments of the present invention is to provide a motor, a robot, or a pump including the piezoelectric driving device described above.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following aspects or application examples.

[Application Example 1]
One aspect of the piezoelectric drive device according to the present invention is:
A piezoelectric drive device including a plurality of vibration units,
The vibration unit is
A diaphragm,
A first electrode layer provided above the diaphragm;
A piezoelectric layer provided above the first electrode layer;
A second electrode layer provided above the piezoelectric layer;
A first wiring layer electrically connected to the second electrode layer;
A first insulating layer provided above the first electrode layer, the piezoelectric layer, and the second electrode layer;
Including
The upper surface of the first insulating layer and the upper surface of the first wiring layer are continuous,
The plurality of vibration units are arranged so as to overlap in a direction perpendicular to the plate surface of the vibration plate.

  In such a piezoelectric drive device, the upper surface of the first insulating layer and the upper surface of the first wiring layer are not continuous and there is a step between the two upper surfaces. The flatness of the surface joined to the vibration unit can be improved. Thereby, in such a piezoelectric drive device, it can suppress that space arises between adjacent vibration units. As a result, in such a piezoelectric drive device, it is possible to suppress the loss of vibration transmission between adjacent vibration units, and to achieve high output.

  In the description according to the present invention, the word “upper” is used, for example, “specifically” (hereinafter referred to as “A”) is formed above another specific thing (hereinafter referred to as “B”). The word “above” is used to include the case where B is formed directly on A and the case where B is formed on A via another object. Used.

  Further, in the description of the present invention, the term “electrically connected” refers to, for example, another specific member (hereinafter referred to as “electrically connected” to “specific member (hereinafter referred to as“ C member ”)”. It is used as "D member"). In the description according to the present invention, in the case of this example, the case where the C member and the D member are directly connected and electrically connected, and the C member and the D member are the other members. The term “electrically connected” is used as a case where the case where the terminals are electrically connected to each other is included.

[Application Example 2]
In application example 1,
The first insulating layer includes
An inorganic insulating layer;
An organic insulating layer provided above the inorganic insulating layer;
You may have.

  In such a piezoelectric drive device, a short circuit between the first electrode layer and the second electrode layer can be suppressed, and the durability of the piezoelectric element can be improved.

[Application Example 3]
In application example 1 or 2,
A second insulating layer provided above the first insulating layer;
A second wiring layer provided above the second insulating layer and the first wiring layer and electrically connected to the first wiring layer;
May be included.

  In such a piezoelectric driving device, it is possible to improve the degree of freedom of routing of the wiring constituted by the first wiring layer and the second wiring layer.

[Application Example 4]
In application example 3,
The second wiring layer is
A first wiring portion electrically connected to the first electrode layer;
A second wiring portion electrically connected to the second electrode layer;
Have
A third insulating layer is provided between the first wiring portion and the second wiring portion;
The upper surface of the third insulating layer and the upper surface of the second wiring layer may be continuous.

  In such a piezoelectric driving device, the upper surface of the third insulating layer and the upper surface of the second wiring layer are not continuous, and the bonding surface of the vibration unit is flat compared to the case where there is a step between the two upper surfaces. Can be improved.

[Application Example 5]
In application example 3 or 4,
An electroless plating layer is provided on at least one of the first wiring layer and the second wiring layer,
The electroless plating layer may be made of nickel.

  In such a piezoelectric drive device, oxidation of at least one of the first wiring layer and the second wiring layer can be suppressed.

[Application Example 6]
In any one of Application Examples 3 to 5,
A metal layer is provided above the second wiring layer;
The metal layer of one of the vibration units adjacent to each other and the metal layer of the other vibration unit may be metal-bonded so as to face each other.

  In such a piezoelectric drive device, adjacent vibration units can be firmly joined without using an adhesive.

[Application Example 7]
In any one of Application Examples 1 to 6,
A dummy piezoelectric layer sandwiched between the first electrode layer and the first insulating layer is provided;
A voltage may not be applied to the dummy piezoelectric layer.

  In such a piezoelectric driving device, the flatness of the joint surface of the vibration unit can be improved as compared with the case where the dummy piezoelectric layer is not provided.

[Application Example 8]
One aspect of a method for manufacturing a piezoelectric drive device according to the present invention is as follows.
Forming a plurality of vibration units;
Arranging a plurality of the vibration units so as to overlap in a direction perpendicular to a plate surface of the diaphragm;
Including
The step of forming the vibration unit includes:
Forming a first electrode layer above the diaphragm;
Forming a piezoelectric layer above the first electrode layer;
Forming a second electrode layer above the piezoelectric layer;
Forming a first insulating layer above the first electrode layer, the piezoelectric layer, and the second electrode layer so that the first electrode layer and the second electrode layer are exposed;
Forming a first wiring layer electrically connected to the exposed first electrode layer and the second electrode layer;
Removing the upper portion of the first wiring layer and continuing the upper surface of the first insulating layer and the upper surface of the first wiring layer;
Have

In such a method for manufacturing a piezoelectric drive device, the flatness of the joint surface of the vibration unit can be improved, and a piezoelectric drive device capable of achieving high output can be manufactured.

[Application Example 9]
In application example 8,
The step of forming the vibration unit includes:
Forming a second insulating layer above the first insulating layer;
Forming a third insulating layer above the second insulating layer;
Forming a second wiring layer electrically connected to the first wiring layer above the third insulating layer;
Removing the upper portion of the second wiring layer, and continuing the upper surface of the third insulating layer and the upper surface of the second wiring layer;
You may have.

  In such a method of manufacturing a piezoelectric drive device, the flatness of the joint surface of the vibration unit can be further improved.

[Application Example 10]
In application example 9,
The step of forming the vibration unit includes:
Forming a metal layer above the second wiring layer;
In the step of arranging a plurality of the vibration units,
The metal layer of one of the vibration units adjacent to each other and the metal layer of the other vibration unit may be metal-bonded facing each other.

  In such a method for manufacturing a piezoelectric drive device, it is possible to firmly bond adjacent vibration units without using an adhesive.

[Application Example 11]
One aspect of the motor according to the present invention is:
The piezoelectric drive device according to any one of Application Examples 1 to 7, and
A rotor rotated by the piezoelectric drive device;
including.

  Such a motor can include a piezoelectric drive according to the present invention.

[Application Example 12]
One aspect of the robot according to the present invention is:
A plurality of link parts;
A joint part connecting a plurality of the link parts;
The piezoelectric drive device according to any one of Application Examples 1 to 7, in which a plurality of the link portions are rotated at the joint portions,
including.

  Such a robot can include the piezoelectric driving device according to the present invention.

[Application Example 13]
One aspect of the pump according to the present invention is:
The piezoelectric drive device according to any one of Application Examples 1 to 7, and
A tube that transports the liquid;
A plurality of fingers for closing the tube by driving the piezoelectric driving device;
including.

  Such a pump can include a piezoelectric drive according to the present invention.

The top view which shows typically the piezoelectric drive device which concerns on this embodiment. 1 is a cross-sectional view schematically showing a piezoelectric drive device according to an embodiment. The top view which shows typically the piezoelectric drive device which concerns on this embodiment. 1 is a cross-sectional view schematically showing a piezoelectric drive device according to an embodiment. The figure which shows the equivalent circuit for demonstrating the piezoelectric drive device which concerns on this embodiment. The figure for demonstrating operation | movement of the piezoelectric drive device which concerns on this embodiment. 1 is a cross-sectional view schematically showing a piezoelectric drive device according to an embodiment. 1 is a cross-sectional view schematically showing a piezoelectric drive device according to an embodiment. The flowchart for demonstrating the manufacturing method of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric drive device which concerns on this embodiment. Sectional drawing which shows typically the piezoelectric drive device which concerns on the 1st modification of this embodiment. Sectional drawing which shows typically the piezoelectric drive device which concerns on the 2nd modification of this embodiment. Sectional drawing which shows typically the piezoelectric drive device which concerns on the 3rd modification of this embodiment. Sectional drawing which shows typically the piezoelectric drive device which concerns on the 3rd modification of this embodiment. Sectional drawing which shows typically the piezoelectric drive device which concerns on the 4th modification of this embodiment. Sectional drawing which shows typically the piezoelectric drive device which concerns on the 5th modification of this embodiment. Sectional drawing which shows typically the piezoelectric drive device which concerns on the 5th modification of this embodiment. The figure for demonstrating the robot which concerns on this embodiment. The figure for demonstrating the wrist part of the robot which concerns on this embodiment. The figure for demonstrating the pump which concerns on this embodiment.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. The embodiments described below do not unduly limit the contents of the present invention described in the claims. In addition, not all of the configurations described below are essential constituent requirements of the present invention.

1. Piezoelectric Drive Device First, a piezoelectric drive device according to the present embodiment will be described with reference to the drawings. FIG. 1 is a plan view schematically showing a piezoelectric driving device 100 according to this embodiment. 2 is a cross-sectional view taken along the line II-II of FIG. 1 schematically showing the piezoelectric driving device 100 according to the present embodiment.

  The piezoelectric drive device 100 includes a plurality of vibration units 102 as shown in FIGS. 1 and 2. In the illustrated example, the piezoelectric driving device 100 includes two vibration units 102a and 102b. Note that the number of the plurality of vibration units 102 is not particularly limited.

  As shown in FIG. 2, the first vibration unit 102 a and the second vibration unit 102 b include a substrate 10 and a structure body 101. The substrate 10 has a first surface 10a and a second surface 10b opposite to the first surface 10a. The first surface 10 a and the second surface 10 b are main surfaces of the substrate 10. The structure 101 is provided on the first surface 10 a of the substrate 10. In FIG. 2, the structure 101 is illustrated in a simplified manner.

  The plurality of vibration units 102 are arranged so as to overlap with a direction perpendicular to the first surface (plate surface of the vibration plate) 10a of the substrate 10. In the illustrated example, the plurality of vibration units 102 are arranged so as to overlap in the thickness direction of the substrate 10. The first vibration unit 102a and the second vibration unit 102b are joined so that the first surface 10a of the substrate 10 of the first vibration unit 102a and the first surface 10a of the substrate 10 of the second vibration unit 102b face each other. ing. In the illustrated example, the structure 101 has a joint surface 101a facing away from the second surface 10b, and the joint surface 101a of the first vibration unit 102a and the joint surface 101a of the second vibration unit 102b are adhesive 2 It is joined via.

  Although not shown, the first vibration unit 102a and the second vibration unit 102b are the first surface 10a of the substrate 10 of the first vibration unit 102a and the second surface 10b of the substrate 10 of the second vibration unit 102b. May be joined so as to face each other. In this case, the structure 101 of the first vibration unit 102a and the substrate 10 of the second vibration unit 102b are joined.

  Here, FIG. 3 is a plan view schematically showing the first vibration unit 102a. 4 is a cross-sectional view taken along line IV-IV of FIG. 3 schematically showing the first vibration unit 102a. The first vibration unit 102a and the second vibration unit 102b basically have the same configuration. Therefore, hereinafter, the first vibration unit 102a will be described with reference to FIGS. The description of the first vibration unit 102a can be basically applied to the second vibration unit 102b.

  As shown in FIGS. 3 and 4, the first vibration unit 102 a includes a substrate 10 and a structure 101. A contact portion 20 is provided in the first vibration unit 102a. The structure 101 includes a first electrode layer 32, a piezoelectric layer 34, a dummy piezoelectric layer 35, a second electrode layer 36, a first insulating layer 40, a second insulating layer 42, and a third insulating layer. 44, a fourth insulating layer 46, a first wiring layer 50, and a second wiring layer 52. In FIG. 3, for the sake of convenience, illustration of members other than the substrate 10, the electrode layers 32 and 36, and the piezoelectric element 30 including the piezoelectric layer 34 and the dummy piezoelectric layer 35 is omitted.

The substrate 10 includes, for example, a silicon substrate 11a and a base layer 11b provided on the silicon substrate 11a. The thickness of the silicon substrate 11a is, for example, about 100 μm. The foundation layer 11b is an insulating layer. The base layer 11b is composed of, for example, a stacked body of a silicon oxide (SiO ₂ ) layer provided on the silicon substrate 11a and a zirconium oxide (ZrO ₂ ) layer provided on the silicon oxide layer.

As illustrated in FIG. 3, the substrate 10 includes a vibrating body portion (diaphragm) 12, a support portion 14, a first connection portion 16, and a second connection portion 18. The planar shape (the shape seen from the thickness direction of the substrate 10) of the vibrating body portion 12 is substantially rectangular. A structural body 101 is provided on the vibrating body portion 12. A piezoelectric element 30 is provided on the vibrating body 12, and the vibrating body 12 can vibrate by deformation of the piezoelectric element 30. The support portion 14 supports the vibrating body portion 12 via the connection portions 16 and 18. In the illustrated example, the connection parts 16 and 18 extend from the central part in the longitudinal direction of the vibrating body part 12 in the short direction perpendicular to the longitudinal direction and are connected to the support part 14.

The contact portion 20 is provided on the vibrating body portion 12. In the example shown in the drawing, the vibrating body 12 is provided with a recess 12a, and the contact portion 20 is fitted into the recess 12a and bonded (for example, bonded). The contact portion 20 is a member that contacts the driven member and transmits the movement of the vibrating body portion 12 to the driven member. The material of the contact portion 20 is, for example, ceramics (specifically, alumina (Al ₂ O ₃ ), zirconia (ZrO ₂ ), silicon nitride (Si ₃ N), etc.).

  The piezoelectric element 30 is provided on the substrate 10. Specifically, the piezoelectric element 30 is provided on the vibrating body portion 12.

  The first electrode layer 32 is provided above the vibrating body portion 12 (on the vibrating body portion 12 in the illustrated example). In the illustrated example, the planar shape of the first electrode layer 32 is a rectangle. The first electrode layer 32 may be configured by a titanium layer provided on the vibrating body portion 12 and a platinum layer provided on the titanium layer. The thickness of the titanium layer is, for example, not less than 5 nm and not more than 100 nm. The thickness of the platinum layer is, for example, not less than 50 nm and not more than 300 nm. The first electrode layer 32 is a metal layer made of Ti, Pt, Ta, Ir, Sr, In, Sn, Au, Al, Fe, Cr, Ni, Cu, or a mixture or stack of two or more of these. It may be what you did. The first electrode layer 32 is one electrode for applying a voltage to the piezoelectric layer 34.

  The piezoelectric layer 34 is provided above the first electrode layer 32 (on the first electrode layer 32 in the illustrated example). In the illustrated example, the planar shape of the piezoelectric layer 34 is a rectangle. The thickness of the piezoelectric layer 34 is, for example, not less than 50 nm and not more than 20 μm, and preferably not less than 1 μm and not more than 7 μm. Thus, the piezoelectric element 30 is a thin film piezoelectric element. If the thickness of the piezoelectric layer 34 is smaller than 50 nm, the output of the piezoelectric driving device 100 may be small. Specifically, when the voltage applied to the piezoelectric layer 34 is increased in order to increase the output, the piezoelectric layer 34 may cause dielectric breakdown. If the thickness of the piezoelectric layer 34 is greater than 20 μm, the piezoelectric layer 34 may crack.

As the piezoelectric layer 34, a perovskite oxide piezoelectric material is used. Specifically, the material of the piezoelectric layer 34 is, for example, lead zirconate titanate (Pb (Zr, Ti) O ₃ : PZT), lead zirconate titanate niobate (Pb (Zr, Ti, Nb) O). ₃ : PZTN). For example, the piezoelectric layer 34 is sandwiched between the first electrode layer 32 and the second electrode layer 36. The piezoelectric layer 34 is actively deformed (stretched) when a voltage is applied between the electrode layers 32 and 36.

  The dummy piezoelectric layer 35 is provided on the first electrode layer 32. In the illustrated example, the dummy piezoelectric layer 35 is sandwiched between the first electrode layer 32 and the first insulating layer 40. The dummy piezoelectric layer 35 is not sandwiched between the first electrode layer 32 and the second electrode layer 36. No voltage is applied to the dummy piezoelectric layer 35 by the electrode layers 32 and 36.

The dummy piezoelectric layer 35 is provided so as to surround the piezoelectric layer 34 in a plan view (as viewed from the thickness direction of the substrate 10). The dummy piezoelectric layer 35 is provided with a first contact hole 60. The dummy piezoelectric layer 35 is provided integrally with the piezoelectric layer 34. The material of the dummy piezoelectric layer 35 is the same as the material of the piezoelectric layer 34. For example, the outer edge of the piezoelectric layer 34 overlaps with the outer edge of the first electrode layer 32 in plan view. Although not shown, the dummy piezoelectric layer 35 may also be provided on the support portion 14 and the connection portions 16 and 18.

  The second electrode layer 36 is provided above the piezoelectric layer 34 (in the illustrated example, on the piezoelectric layer 34). In the illustrated example, the planar shape of the second electrode layer 36 is a rectangle. The second electrode layer 36 may be configured by an adhesion layer provided on the piezoelectric layer 34 and a conductive layer provided on the adhesion layer. The thickness of the adhesion layer is, for example, 10 nm or more and 100 nm or less. The adhesion layer is, for example, a TiW layer, a Ti layer, a Cr layer, a NiCr layer, or a laminate thereof. The thickness of the conductive layer is, for example, 1 μm or more and 10 μm or less. The conductive layer is, for example, a Cu layer, an Au layer, an Al layer, or a laminate thereof. The second electrode layer 36 is the other electrode for applying a voltage to the piezoelectric layer 34.

  As shown in FIG. 3, a plurality of piezoelectric elements 30 are provided. In the illustrated example, five piezoelectric elements 30 are provided (piezoelectric elements 30a, 30b, 30c, 30d, and 30e). In plan view (as viewed from the thickness direction of the substrate 10), for example, the areas of the piezoelectric elements 30a to 30d are the same, and the piezoelectric element 30e has a larger area than the piezoelectric elements 30a to 30d. The piezoelectric element 30 e is provided along the longitudinal direction of the vibrating body 12 at the central portion in the short direction of the vibrating body 12. The piezoelectric elements 30 a to 30 d are provided at the four corners of the vibrating body portion 12.

  In the piezoelectric elements 30a to 30e, the first electrode layer 32 is provided as one continuous conductive layer. Five piezoelectric layers 34 are provided corresponding to the piezoelectric elements 30a to 30e. The dummy piezoelectric layer 35 is provided as one continuous piezoelectric layer. Five second electrode layers 36 are provided corresponding to the piezoelectric elements 30a to 30e.

  As shown in FIG. 4, the first insulating layer 40 is provided above the electrode layers 32 and 36 and the piezoelectric layer 34 (on the electrode layers 32 and 36 and the dummy piezoelectric layer 35 in the illustrated example). Yes. The first insulating layer 40 includes an inorganic insulating layer 40a and an organic insulating layer 40b.

The inorganic insulating layer 40 a of the first insulating layer 40 is provided on the electrode layers 32 and 36 and the dummy piezoelectric layer 35. The material of the inorganic insulating layer 40a is, for example, aluminum oxide (Al ₂ O ₃ ). A second contact hole 62 is provided in the inorganic insulating layer 40a. In the illustrated example, a plurality of second contact holes 62 are provided on the second electrode layer 36.

  The organic insulating layer 40b of the first insulating layer 40 is provided above the inorganic insulating layer 40a (in the illustrated example, on the inorganic insulating layer 40a). The organic insulating layer 40b has photosensitivity, for example. "Photosensitivity" refers to the property that a substance causes a chemical reaction by light. Specifically, the organic insulating layer 40b can be patterned by exposure, development, and baking (heat treatment) without using etching. The material of the organic insulating layer 40b is, for example, an epoxy resin or an acrylic resin. More specifically, the material of the organic insulating layer 40b is a negative permanent resist (for example, S2000 manufactured by Tokyo Ohka). A third contact hole 64 is provided in the organic insulating layer 40b. The third contact hole 64 communicates with the second contact hole 62. In addition, when the organic insulating layer 40b does not have photosensitivity, the organic insulating layer 40b is patterned by photolithography and etching.

  The first wiring layer 50 is provided in the contact holes 62 and 64. The upper surface 41 of the first insulating layer 40 and the upper surface 51 of the first wiring layer 50 are continuous. For example, the upper surfaces 41 and 51 have no step at the boundary between the upper surfaces 41 and 51. The upper surfaces 41 and 51 are trichomes. In the illustrated example, the upper surfaces 41 and 51 constitute one flat plane. For example, the height of the first wiring layer 50 is the same as the height of the first insulating layer 40.

  The first wiring layer 50 includes, for example, a first seed layer 6 and a first plating layer 7 provided on the first seed layer 6. The first seed layer 6 is, for example, an electroless plating layer formed by an electroless plating method. The material of the first seed layer 6 is, for example, nickel. The thickness of the first seed layer 6 is, for example, about 100 nm. The material of the plating layer 7 is, for example, copper. The thickness of the first plating layer 7 (thickness when formed on a flat surface) is, for example, about 5 μm.

  The first seed layer 6 may be a stacked body of a titanium tungsten layer (for example, about 50 nm thick) and a copper layer (for example, about 100 nm thick) provided on the titanium tungsten layer.

  The first wiring layer 50 includes a first wiring part 50a and a second wiring part 50b. The first wiring part 50 a is provided above the first electrode layer 32 and is electrically connected to the first electrode layer 32. The second wiring part 50 b is provided above the second electrode layer 36 and is electrically connected to the second electrode layer 36.

  On the first wiring layer 50, a first electroless plating layer 70 formed by an electroless plating method is provided. The material of the first electroless plating layer 70 is, for example, nickel. The thickness of the first electroless plating layer 70 is, for example, about 100 nm.

  The second insulating layer 42 is provided above the first insulating layer 40 (on the first insulating layer 40 in the illustrated example). In the illustrated example, the second insulating layer 42 is also provided above the second wiring portion 50 b of the first wiring layer 50. A fourth contact hole 66 is provided in the second insulating layer 42. In the illustrated example, a plurality of fourth contact holes 66 are provided above the second wiring portion 50b. The material of the second insulating layer 42 is, for example, the same as that of the organic insulating layer 40b.

  The third insulating layer 44 is provided above the second insulating layer 42 (on the second insulating layer 42 in the illustrated example). The material of the third insulating layer 44 is, for example, the same as that of the organic insulating layer 40b.

  The second wiring layer 52 is provided above the second insulating layer 42 and the first wiring layer 50. The second wiring layer 52 is provided in the fourth contact hole 66. The second wiring layer 52 is electrically connected to the first wiring layer 50 through the first electroless plating layer 70. The second wiring layer 52 is electrically connected to a power source (not shown). The upper surface 45 of the third insulating layer 44 and the upper surface 53 of the second wiring layer 52 are continuous. For example, the upper surfaces 45 and 53 have no step at the boundary between the upper surfaces 45 and 53. The upper surfaces 45 and 53 are pitched. In the illustrated example, the upper surfaces 45 and 53 constitute one flat plane. For example, the height of the second wiring layer 52 is the same as the height of the third insulating layer 44.

  The second wiring layer 52 includes, for example, a second seed layer 8 and a second plating layer 9 provided on the second seed layer 8. The second seed layer 8 is an electroless plating layer formed by, for example, an electroless plating method. The material and thickness of the second seed layer 8 are the same as those of the first seed layer 6, for example. The material and thickness of the second plating layer 9 are the same as those of the first plating layer 7, for example.

  The second wiring layer 52 includes a first wiring part 52a and a second wiring part 52b. The first wiring part 52 a is electrically connected to the first electrode layer 32 through the first wiring part 50 a of the first wiring layer 50. The second wiring part 52 b is electrically connected to the second electrode layer 36 via the second wiring part 50 b of the first wiring layer 50. The third insulating layer 44 is provided between the first wiring part 52a and the second wiring part 52b.

On the second wiring layer 52, a second electroless plating layer 72 formed by an electroless plating method is provided. The material and thickness of the second electroless plating layer 72 are the same as those of the first electroless plating layer 70, for example.

  The fourth insulating layer 46 is provided above the third insulating layer 44 and the second wiring layer 52 (on the third insulating layer 44 and the second electroless plating layer 72 in the illustrated example). The fourth insulating layer 46 constitutes the bonding surface 101a. The material of the fourth insulating layer 46 is the same as the material of the organic insulating layer 40b, for example.

  FIG. 5 is a diagram showing an equivalent circuit for explaining the piezoelectric driving device 100. The piezoelectric elements 30 are divided into three groups. The first group has two piezoelectric elements 30a and 30d. The second group has two piezoelectric elements 30b and 30c. The third group has only one piezoelectric element 30e. As shown in FIG. 5, the first group of piezoelectric elements 30 a and 30 d are connected in parallel to each other and connected to the drive circuit 110. The second group of piezoelectric elements 30 b and 30 c are connected in parallel to each other and connected to the drive circuit 110. The third group of piezoelectric elements 30e are connected to the drive circuit 110 independently.

  The drive circuit 110 is a predetermined piezoelectric element among the five piezoelectric elements 30a, 30b, 30c, 30d, and 30e, for example, between the first electrode layer 32 and the second electrode layer 36 of the piezoelectric elements 30a, 30d, and 30e. An alternating voltage or a pulsating voltage that periodically changes is applied to. Thereby, the piezoelectric driving device 100 can rotate the rotor (driven member) in contact with the contact portion 20 in a predetermined rotation direction by ultrasonically vibrating the vibrating body portion 12. Here, the “pulsating voltage” means a voltage obtained by adding a DC offset to an AC voltage, and the direction of the voltage (electric field) of the pulsating voltage is one direction from one electrode to the other electrode.

  The direction of the electric field is preferably from the second electrode layer 36 toward the first electrode layer 32 rather than from the first electrode layer 32 toward the second electrode layer 36. Moreover, the rotor which contacts the contact part 20 can be rotated in a reverse direction by applying an alternating voltage or a pulsating voltage between the electrode layers 32 and 36 of the piezoelectric elements 30b, 30c, and 30e.

  FIG. 6 is a diagram for explaining the operation of the vibrating body portion 12 of the piezoelectric driving device 100. As shown in FIG. 6, the contact portion 20 of the piezoelectric driving device 100 is in contact with the outer periphery of the rotor 4 as a driven member. The drive circuit 110 applies an alternating voltage or a pulsating voltage between the electrode layers 32 and 36 of the piezoelectric elements 30a and 30d. Thereby, the piezoelectric elements 30a and 30d expand and contract in the direction of the arrow x. In response to this, the vibrating body portion 12 is bent and vibrated along the short direction of the vibrating body portion 12 in a state where no voltage is applied to the piezoelectric element 30 in the plane of the vibrating body portion 12. ) To deform into a meandering shape (S-shape). Furthermore, the drive circuit 110 applies an alternating voltage or a pulsating voltage between the electrode layers 32 and 36 of the piezoelectric element 30e. Thereby, the piezoelectric element 30e expands and contracts in the direction of the arrow y. Thereby, the vibrating body portion 12 vibrates longitudinally in the plane of the vibrating body portion 12 (for example, longitudinal vibration along the longitudinal direction of the vibrating body portion 12 in a state where no voltage is applied to the piezoelectric element 30). Due to the bending vibration and longitudinal vibration of the vibrating body portion 12 as described above, the contact portion 20 moves elliptically as indicated by an arrow z. As a result, the rotor 4 rotates around the center 4a in a predetermined direction R (clockwise direction in the illustrated example).

  In addition, when the drive circuit 110 applies an alternating voltage or a pulsating voltage between the electrode layers 32 and 36 of the piezoelectric elements 30b, 30c, and 30e, the rotor 4 has a direction opposite to the direction R (counterclockwise direction). ).

  Moreover, it is preferable that the resonance frequency of the bending vibration and the resonance frequency of the longitudinal vibration of the vibrating body 12 are the same. Thereby, the piezoelectric drive device 100 can rotate the rotor 4 efficiently.

  As shown in FIG. 6, the motor 120 according to the present embodiment includes the piezoelectric driving device (piezoelectric driving device 100 in the illustrated example) according to the present invention and the rotor 4 rotated by the piezoelectric driving device 100.

  The piezoelectric drive device 100 has the following features, for example.

  In the piezoelectric driving device 100, the upper surface 41 of the first insulating layer 40 and the upper surface 51 of the first wiring layer 50 are continuous, and the plurality of vibration units 102 overlap in a direction perpendicular to the first surface 10 a of the substrate 10. Is arranged. For this reason, in the piezoelectric driving device 100, the upper surface of the first insulating layer and the upper surface of the first wiring layer are not continuous, and the bonding surface 101a of the vibration unit 102 is compared to the case where there is a step between the two upper surfaces. The flatness of the film can be improved. Thereby, in the piezoelectric drive device 100, it can suppress that space arises between the adjacent vibration units 102. FIG. As a result, in the piezoelectric driving device 100, it is possible to suppress the loss of vibration transmission between the adjacent vibration units 102, and to achieve high output. Furthermore, in the piezoelectric drive device 100, high efficiency can be achieved.

  In the piezoelectric driving device 100, the first insulating layer 40 includes an inorganic insulating layer 40a and an organic insulating layer 40b provided above the inorganic insulating layer 40a. Therefore, in the piezoelectric driving device 100, it is possible to prevent moisture from adhering to the side surface of the dummy piezoelectric layer 35 by the inorganic insulating layer 40 a having a high moisture barrier property (low moisture permeability). Thereby, in the piezoelectric drive device 100, it is possible to suppress the first electrode layer 32 and the second electrode layer 36 from being short-circuited through moisture on the side surface of the dummy piezoelectric layer 35. Furthermore, in the piezoelectric driving device 100, the organic insulating layer 40b can increase the interlayer insulation between the first electrode layer 32 and the second wiring portion 52b of the second wiring layer 52. That is, by providing the organic insulating layer 40b, the distance between the first electrode layer 32 and the second wiring portion 52b can be increased compared to the case where the organic insulating layer 40b is not provided, and the first electrode layer 32 and the second wiring part 52b can be prevented from being short-circuited. Therefore, in the piezoelectric driving device 100, a short circuit between the electrode layers 32 and 36 can be suppressed. As a result, in the piezoelectric driving device 100, the durability of the piezoelectric element 30 can be improved.

  The piezoelectric driving device 100 includes a second insulating layer 42 provided above the first insulating layer 40 and a second wiring layer 52 provided above the second insulating layer 42 and the first wiring layer 50. . Therefore, in the piezoelectric driving device 100, the degree of freedom for routing the wiring constituted by the wiring layers 50 and 52 can be improved.

  In the piezoelectric driving device 100, the upper surface 45 of the third insulating layer 44 and the upper surface 53 of the second wiring layer 52 are continuous. Therefore, in the piezoelectric driving device 100, the upper surface of the third insulating layer and the upper surface of the second wiring layer are not continuous, and the bonding surface 101a of the vibration unit 102 is compared to a case where there is a step between the two upper surfaces. The flatness of the film can be improved. Thereby, in the piezoelectric drive device 100, higher output can be achieved.

  In the piezoelectric driving device 100, the first electroless plating layer 70 is provided on the first wiring layer 50, the second electroless plating layer 72 is provided on the second wiring layer 52, and the electroless plating layers 70, 72 are provided. The material is nickel. Therefore, in the piezoelectric driving device 100, the oxidation of the wiring layers 50 and 52 can be suppressed. In particular, when the wiring layer is made of copper, the wiring layer is oxidized by baking (heat treatment for curing the insulating layer) at 150 ° C. or higher and 200 ° C. or lower in the step of forming the insulating layer after forming the wiring layer. Cheap. Even in such a case, in the piezoelectric driving device 100, the oxidation of the wiring layers 50 and 52 can be suppressed by the electroless plating layers 70 and 72.

Further, in the piezoelectric driving apparatus 100, CMP (Chemical Mechanical) is used.
When the upper portions of the wiring layers 50 and 52 and the insulating layers 40 and 44 are removed by planarization, for example, as shown in FIG. 7, the recess 3 is formed by dishing at the center of the upper surfaces 51 and 53 of the wiring layers 50 and 52. May be formed (an example of the first wiring layer 50 is shown in FIG. 7). In such a case, in the piezoelectric driving device 100, the recess 3 can be filled with the electroless plating layers 70 and 72.

  Furthermore, in the piezoelectric drive device 100, migration of the plating layers 7 and 9 can be suppressed by the electroless plating layers 70 and 72. In particular, the plating layer made of copper is likely to undergo migration, but the piezoelectric drive device 100 can suppress migration as described above.

  Although not shown, either one of the first electroless plating layer 70 and the second electroless plating layer 72 may not be provided.

  In the piezoelectric driving device 100, a dummy piezoelectric layer 35 sandwiched between the first electrode layer 32 and the first insulating layer 40 is provided. Therefore, in the piezoelectric driving device 100, the flatness of the bonding surface 101a of the vibration unit 102 can be improved as compared with the case where the dummy piezoelectric layer 35 is not provided. Thereby, in the piezoelectric drive device 100, higher output can be achieved.

  The piezoelectric driving device 100 includes seed layers 6 and 8 that are electroless plating layers. Here, when the insulating layers 40a, 42, and 44 are negative permanent resists, the shape of the insulating layers 40a, 42, and 44 is inversely tapered (the width of the insulating layer from bottom to top as shown in FIG. 8). (The taper becomes wider) (an example of the second insulating layer 42 is shown in FIG. 8). For this reason, when the seed layer is formed by sputtering, the seed layer may not be formed at a desired portion. On the other hand, in the piezoelectric drive device 100, since the seed layers 6 and 8 are electroless plating layers, the coverage can be improved as compared with a seed layer formed by sputtering.

  In the piezoelectric driving device 100, the material of the plating layers 7 and 9 is copper. Therefore, in the piezoelectric driving device 100, the cost and resistance of the wiring layers 50 and 52 can be reduced as compared with the case where the material of the plating layer is gold.

  The piezoelectric driving device 100 includes a fourth insulating layer 46 provided above the second wiring layer 52. Therefore, in the piezoelectric drive device 100, the fourth insulating layer 46 can suppress the oxidation of the second wiring layer 52. Furthermore, in the piezoelectric driving device 100, the adhesiveness between the bonding surface 101 a and the adhesive 2 can be improved by the fourth insulating layer 46.

2. Next, a method for manufacturing the piezoelectric drive device 100 according to the present embodiment will be described with reference to the drawings. FIG. 9 is a flowchart for explaining a manufacturing method of the piezoelectric driving device 100 according to the present embodiment. 10 to 23 are cross-sectional views schematically showing the manufacturing process of the piezoelectric driving device 100 according to this embodiment.

  As shown in FIG. 10, the 1st electrode layer 32 is formed on the vibrating body part 12 of the board | substrate 10 (S1). The first electrode layer 32 is formed, for example, by sputtering, CVD (Chemical Vapor Deposition), vacuum deposition, or the like, and patterning (patterning by photolithography and etching).

The substrate 10 is obtained, for example, by forming the base layer 11b on the silicon substrate 11a. The underlayer 11b is obtained by thermally oxidizing the silicon substrate 11a to form a silicon oxide layer, sputtering a zirconium layer on the thermally oxidized silicon layer, and then thermally oxidizing to form a zirconium oxide layer.

  As shown in FIG. 11, the piezoelectric layer 34 and the dummy piezoelectric layer 35 are formed on the first electrode layer 32 (S2). The piezoelectric layer 34 and the dummy piezoelectric layer 35 are formed, for example, by repeating formation of a precursor layer by a liquid phase method and crystallization of the precursor layer. The liquid phase method is a method of forming a thin film material using a raw material liquid containing a constituent material of a thin film (piezoelectric layer), and specifically, a sol-gel method, a MOD (Metal Organic Deposition) method, or the like. . Crystallization is performed by, for example, heat treatment at 700 ° C. to 800 ° C. in an oxygen atmosphere. After the piezoelectric layer 34 and the dummy piezoelectric layer 35 are formed, the first contact hole 60 is formed in the dummy piezoelectric layer 35 by patterning.

  Next, the second electrode layer 36 is formed on the piezoelectric layer 34 (S3). For example, the second electrode layer 36 is formed by the same method as the first electrode layer 32. The piezoelectric element 30 can be formed on the vibrating body portion 12 of the substrate 10 through the steps (S1) to (S3).

  As shown in FIG. 12, an inorganic insulating layer 40a is formed on the electrode layers 32 and 36 and the dummy piezoelectric layer 35 so that the electrode layers 32 and 36 are exposed (S4). Specifically, the inorganic insulating layer 40a is formed by an ALCVD (Atomic Layer Chemical Vapor Deposition) method, a CVD method, or the like, and then the inorganic insulating layer 40a is patterned to form the second contact hole 62, and the electrode layer 32 is formed. 36 are exposed.

  As shown in FIG. 13, the organic insulating layer 40b is formed on the inorganic insulating layer 40a (S5). Specifically, the organic insulating layer 40b is formed by spin coating or the like, and then the organic insulating layer 40b is patterned to form the third contact hole 64, and the electrode layers 32 and 36 are exposed. By the step (S4) and the step (S5), the first insulating layer 40 can be formed above the electrode layers 32, 36 and the piezoelectric layers 34, 35.

  As shown in FIG. 14, the first seed layer 6 is formed on the first insulating layer 40 and the electrode layers 32 and 36 (S6). The first seed layer 6 is formed by, for example, an electroless plating method or a sputtering method.

  As shown in FIG. 15, the 1st plating layer 7 is formed on the 1st seed layer 6 (S7). The first plating layer 7 is formed by, for example, an electrolytic plating method. By the step (S6) and the step (S7), the first wiring layer 50 can be formed on the first insulating layer 40 and the exposed electrode layers 32 and 36. In this step, the upper surface of the first wiring layer 50 is not flat because the steps of the piezoelectric layers 34 and 35 and the first insulating layer 40 are transferred.

  As shown in FIG. 16, the upper portions of the first wiring layer 50 and the first insulating layer 40 are removed (S8). Specifically, the upper portions of the first wiring layer 50 and the first insulating layer 40 are cut by a cutting tool (for example, a surface planer manufactured by DISCO Corporation) and then polished by CMP. By this step, the upper surface 41 of the first insulating layer 40 and the upper surface 51 of the first wiring layer 50 can be made continuous. In the illustrated example, the upper surfaces 41 and 51 are flat surfaces. Although not shown, only the upper part of the first wiring layer 50 may be removed as long as the upper surface 41 and the upper surface 51 can be made continuous.

  As shown in FIG. 17, a first electroless plating layer 70 is formed on the first wiring layer 50 (S9). The first electroless plating layer 70 is formed by an electroless plating method.

As shown in FIG. 18, the second insulating layer 42 is formed on the first insulating layer 40 and the first electroless plating layer 70 so that the first electroless plating layer 70 is exposed (S10). Specifically, the second insulating layer 42 is formed by spin coating or the like, and then the second insulating layer 42 is patterned to form the fourth contact hole 66 to expose the first electroless plating layer 70. . In the spin coating method of this step, for example, heat treatment (baking) is performed, but the first electroless plating layer 70 can suppress oxidation of the first plating layer 7 made of copper.

  As shown in FIG. 19, the third insulating layer 44 is formed on the second insulating layer 42 (S11). The third insulating layer 44 is formed by film formation by spin coating and patterning.

  As shown in FIG. 20, the second seed layer 8 is formed on the insulating layers 42 and 44 and the first electroless plating layer 70 (S12). The second seed layer 8 is formed by, for example, the same method as the first seed layer 6.

  As shown in FIG. 21, the second plating layer 9 is formed on the second seed layer 8 (S13). The second plating layer 9 is formed by the same method as the first plating layer 7, for example. By the step (S12) and the step (S13), the second wiring layer 52 can be formed on the insulating layers 42, 44 and the exposed first electroless plating layer 70. In this step, the upper surface of the second wiring layer 52 is not flat because the steps of the piezoelectric layers 34, 35 and the insulating layers 40, 42, 44 are transferred.

  As shown in FIG. 22, the upper portions of the second wiring layer 52 and the third insulating layer 44 are removed (S14). The removal of the upper portions of the second wiring layer 52 and the third insulating layer 44 is performed by the same method as the removal of the upper portions of the first wiring layer 50 and the first insulating layer 40, for example. By this step, the upper surface 45 of the third insulating layer 44 and the upper surface 53 of the second wiring layer 52 can be made continuous. In the illustrated example, the upper surfaces 45 and 53 are flat surfaces. Although not shown, if the upper surface 45 and the upper surface 53 can be made continuous, only the upper portion of the second wiring layer 52 may be removed.

  As shown in FIG. 23, the second electroless plating layer 72 is formed on the second wiring layer 52 (S15). The second electroless plating layer 72 is formed by the same method as the first electroless plating layer 70, for example.

  Through the above steps, the vibration units 102a and 102b can be formed.

  As shown in FIG. 2, the vibration units 102a and 102b are arranged so as to overlap in a direction perpendicular to the first surface 10a of the substrate 10 (S16). For example, the vibration units 102a and 102b are bonded via the adhesive 2 and arranged so as to overlap in the direction perpendicular to the first surface 10a.

  As shown in FIG. 1, the contact part 20 is formed in the vibrating body part 12 (S17). Specifically, the contact portion 20 is bonded to the vibrating body portion 12 via an adhesive. In addition, the order of a process (S16) and a process (S17) is not limited.

  The piezoelectric driving device 100 can be manufactured through the above steps.

  The method for manufacturing the piezoelectric driving device 100 includes a step (S8) of removing the upper portion of the first wiring layer 50 and causing the upper surface 41 of the first insulating layer 40 and the upper surface 51 of the first wiring layer 50 to be continuous. Therefore, in the method for manufacturing the piezoelectric drive device 100, the flatness of the joint surface 101a of the vibration unit 102 can be improved, and the piezoelectric drive device 100 that can achieve high output can be manufactured.

In the method for manufacturing the piezoelectric driving device 100, the upper portion of the second wiring layer 52 is removed and the third insulating layer 4 is removed.
4 and the upper surface 53 of the second wiring layer 52 are continued (S14). Therefore, in the method for manufacturing the piezoelectric drive device 100, the flatness of the joint surface 101a of the vibration unit 102 can be further improved.

3. Modified example of piezoelectric drive device 3.1. First Modification Next, a piezoelectric drive device according to a first modification of the present embodiment will be described with reference to the drawings. FIG. 24 is a cross-sectional view schematically showing the first vibration unit 102a of the piezoelectric driving device 200 according to the first modification of the present embodiment, and shows the same cross section as FIG.

  Hereinafter, in the piezoelectric driving device 200 according to the first modification of the present embodiment, members having the same functions as those of the constituent members of the piezoelectric driving device 100 according to the present embodiment are denoted by the same reference numerals, and detailed description thereof is given. Is omitted. The same applies to the piezoelectric driving devices according to second to fifth modifications of the present embodiment described below.

  In the piezoelectric driving device 100 described above, as shown in FIG. 4, a plurality of second contact holes 62 are provided on the second electrode layer 36. On the other hand, in the piezoelectric driving device 200, as shown in FIG. 24, one second contact hole 62 is provided on the second electrode layer. In plan view, the area of the second contact hole 62 provided on the second electrode layer 36 in the piezoelectric driving device 200 is the area of the second contact hole 62 provided on the second electrode layer 36 in the piezoelectric driving device 100. Bigger than. Therefore, in the piezoelectric driving device 200, the contact area between the second electrode layer 36 and the first wiring layer 50 can be increased as compared with the piezoelectric driving device 100. Thereby, in the piezoelectric driving device 200, the contact resistance between the second electrode layer 36 and the first wiring layer 50 can be reduced.

 For example, when the wiring layer is formed by a plating method, the stress generated between the wiring layer and the second electrode layer is reduced by about 1/10 compared to the case where the wiring layer is formed by a sputtering method. When the stress increases, the wiring layer is more likely to peel off. Even when the contact area between the second electrode layer 36 and the first wiring layer 50 is large as in the piezoelectric driving device 200, the first wiring layer 50 is formed by forming the first wiring layer 50 by plating. And the second electrode layer 36 can be reduced in stress.

3.2. Second Modified Example Next, a piezoelectric driving device according to a second modified example of the present embodiment will be described with reference to the drawings. FIG. 25 is a cross-sectional view schematically showing the first vibration unit 102a of the piezoelectric driving device 300 according to the second modification of the present embodiment, and shows the same cross section as FIG.

  In the piezoelectric drive device 100 described above, as shown in FIG. 4, the first insulating layer 40 has an inorganic insulating layer 40a. On the other hand, in the piezoelectric driving device 300, as shown in FIG. 25, the first insulating layer 40 does not have the inorganic insulating layer 40a, but is constituted by the organic insulating layer 40b.

  Although not shown, in the piezoelectric driving device 200 described above, unlike the piezoelectric driving device 300, the first insulating layer 40 may not include the inorganic insulating layer 40a.

3.3. Third Modification Next, a piezoelectric driving device according to a third modification of the present embodiment will be described with reference to the drawings. FIG. 26 is a cross-sectional view schematically showing a piezoelectric driving device 400 according to a third modification of the present embodiment, and shows the same cross section as FIG. FIG. 27 is a cross-sectional view schematically showing the first vibration unit 102a of the piezoelectric driving device 400 according to the third modification of the present embodiment, and shows the same cross section as FIG.

  In the piezoelectric drive device 100 described above, as shown in FIGS. 2 and 4, the bonding surface 101 a of the vibration unit 102 is configured by the fourth insulating layer 46. On the other hand, in the piezoelectric driving device 400, as shown in FIGS. 26 and 27, the bonding surface 101a is constituted by the metal layer 80.

  In the piezoelectric driving device 400, as shown in FIG. 27, the second electroless plating layer 72 and the fourth insulating layer 46 are not provided on the second wiring layer 52. In the piezoelectric driving device 400, a metal layer 80 is provided above the second wiring layer 52 (on the second wiring layer 52 in the illustrated example). The metal layer 80 is a laminated body of a nickel layer and a gold layer provided on the nickel layer, for example. The metal layer 80 is formed by, for example, an electroless plating method.

  The metal layer 80 may be a laminate of a nickel layer, a palladium layer provided on the nickel layer, and a gold layer provided on the palladium layer. In this case, the metal layer 80 may be formed by an electrolytic plating method.

  In the piezoelectric driving device 400, as shown in FIG. 26, the metal layer 80 of one first vibration unit 102a and the metal layer 80 of the other second vibration unit 102b are adjacent to each other among adjacent vibration units 102a and 102b. They are face-to-face and metal bonded (specifically, Au—Au bonding). Therefore, in the piezoelectric driving device 400, the vibration units 102a and 102b can be firmly joined without using an adhesive.

  Although not shown, in the piezoelectric driving devices 200 and 300 described above, the metal layer 80 is provided as in the piezoelectric driving device 400, and the metal layer 80 of the first vibration unit 102a and the other second vibration unit 102b. The metal layer 80 may be bonded by metal bonding.

3.4. Fourth Modified Example Next, a piezoelectric driving device according to a fourth modified example of the present embodiment will be described with reference to the drawings. FIG. 28 is a cross-sectional view schematically showing the first vibration unit 102a of the piezoelectric driving device 500 according to the fourth modification of the present embodiment, and shows the same cross section as FIG.

  In the piezoelectric driving device 100 described above, as shown in FIG. 4, the organic insulating layer 40b is provided between the first wiring portion 50a of the first wiring layer 50 and the inorganic insulating layer 40a. On the other hand, in the piezoelectric driving device 500, as shown in FIG. 28, the organic insulating layer 40b is not provided between the first wiring portion 50a and the inorganic insulating layer 40a, and the first wiring portion 50a is made of an inorganic material. It is in contact with the insulating layer 40a.

  In the piezoelectric driving device 500, compared with the piezoelectric driving device 100, the contact area between the first electrode layer 32 and the first wiring layer 50 can be increased. Thereby, in the piezoelectric drive device 500, the contact resistance between the first electrode layer 32 and the first wiring layer 50 can be reduced.

  Although not shown in the drawings, in the piezoelectric driving devices 200, 300, and 400 described above, like the piezoelectric driving device 500, the first wiring portion 50a of the first wiring layer 50 may be in contact with the inorganic insulating layer 40a. .

3.5. Fifth Modification Next, a piezoelectric drive device according to a fifth modification of the present embodiment will be described with reference to the drawings. FIG. 29 is a cross-sectional view schematically showing the first vibration unit 102a of the piezoelectric driving device 600 according to the fifth modification of the present embodiment, and shows the same cross section as FIG.

  The piezoelectric driving device 100 described above includes the second wiring layer 52 as shown in FIG. On the other hand, the piezoelectric driving device 600 does not include the second wiring layer 52 as shown in FIG. In the piezoelectric driving device 600, the second insulating layer 42 is provided above the first wiring layer 50 and the first insulating layer 40, and the second insulating layer 42 constitutes the bonding surface 101 a of the vibration unit 102. As shown in FIG. 30, in the piezoelectric driving device 600, the first insulating layer 40 does not have the inorganic insulating layer 40a, and may be configured by the organic insulating layer 40b. The first wiring layer 50 is electrically connected to a power source (not shown).

  Since the piezoelectric driving device 600 does not have the second wiring layer 52, the manufacturing process can be simplified as compared with the piezoelectric driving device 100.

  Although not shown, the piezoelectric driving devices 200, 300, 400, and 500 described above may not include the second wiring layer 52 unlike the piezoelectric driving device 600.

4). Device Using Piezoelectric Drive Device The piezoelectric drive device according to the present invention can apply a large force to a driven body by utilizing resonance, and can be applied to various devices. The piezoelectric drive device according to the present invention is, for example, as a drive device in various devices such as a robot (including an electronic component transfer device (IC handler)), a dosing pump, a calendar feeding device for a clock, and a paper feeding mechanism for a printing device. Can be used. Hereinafter, representative embodiments will be described. Hereinafter, an apparatus including the piezoelectric driving apparatus 100 will be described as the piezoelectric driving apparatus according to the present invention.

4.1. Robot FIG. 31 is a diagram for explaining a robot 2050 using the piezoelectric driving device 100. The robot 2050 includes an arm 2010 (a plurality of link portions 2012 (also referred to as “link members”) and a plurality of joint portions 2020 that connect the link portions 2012 in a rotatable or bendable state. It is also called “arm”.

  Each joint portion 2020 includes a piezoelectric drive device 100, and the joint portion 2020 can be rotated or bent by an arbitrary angle using the piezoelectric drive device 100. A robot hand 2000 is connected to the tip of the arm 2010. The robot hand 2000 includes a pair of grip portions 2003. The robot hand 2000 also has a built-in piezoelectric driving device 100, and the piezoelectric driving device 100 can be used to open and close the gripping unit 2003 to grip an object. Further, the piezoelectric driving device 100 is also provided between the robot hand 2000 and the arm 2010, and the robot hand 2000 can be rotated with respect to the arm 2010 using the piezoelectric driving device 100.

  FIG. 32 is a view for explaining a wrist portion of the robot 2050 shown in FIG. The wrist joint portion 2020 sandwiches the wrist rotating portion 2022, and the wrist link portion 2012 is attached to the wrist rotating portion 2022 so as to be rotatable around the central axis O of the wrist rotating portion 2022. . The wrist rotation unit 2022 includes the piezoelectric driving device 100, and the piezoelectric driving device 100 rotates the wrist link unit 2012 and the robot hand 2000 around the central axis O. The robot hand 2000 is provided with a plurality of gripping units 2003. The proximal end portion of the grip portion 2003 is movable in the robot hand 2000, and the piezoelectric drive device 100 is mounted on the base portion of the grip portion 2003. For this reason, by operating the piezoelectric driving device 100, the gripping portion 2003 can be moved to grip the target. The robot is not limited to a single-arm robot, and the piezoelectric drive device 100 can be applied to a multi-arm robot having two or more arms.

  Here, in the wrist joint 2020 and the robot hand 2000, in addition to the piezoelectric drive device 100, a power line for supplying power to various devices such as a force sensor and a gyro sensor, a signal line for transmitting a signal, and the like And requires a lot of wiring. Therefore, it is very difficult to arrange wiring inside the joint portion 2020 and the robot hand 2000. However, since the piezoelectric drive device 100 can reduce the drive current as compared with a normal electric motor, wiring can be arranged even in a small space such as the joint portion 2020 (particularly, the joint portion at the tip of the arm 2010) or the robot hand 2000. Is possible.

4.2. Pump FIG. 33 is a diagram for explaining an example of a liquid feed pump 2200 using the piezoelectric driving device 100. The liquid feed pump 2200 includes a reservoir 2211, a tube 2212, a piezoelectric driving device 100, a rotor 2222, a deceleration transmission mechanism 2223, a cam 2202, a plurality of fingers 2213, 2214, 2215, 2216, and a case 2230. 2217, 2218, 2219.

  The reservoir 2211 is a storage unit for storing a liquid to be transported. The tube 2212 is a tube for transporting the liquid sent out from the reservoir 2211. The contact portion 20 of the piezoelectric driving device 100 is provided in a state of being pressed against the side surface of the rotor 2222, and the piezoelectric driving device 100 rotationally drives the rotor 2222. The rotational force of the rotor 2222 is transmitted to the cam 2202 via the deceleration transmission mechanism 2223. Fingers 2213 to 2219 are members for closing the tube 2212. When the cam 2202 rotates, the fingers 2213 to 2219 are sequentially pushed outward in the radial direction by the protrusion 2202A of the cam 2202. The fingers 2213 to 2219 close the tube 2212 in order from the upstream side in the transport direction (reservoir 2211 side). Thereby, the liquid in the tube 2212 is transported to the downstream side in order. In this way, it is possible to realize a small liquid feed pump 2200 that can feed a very small amount with high accuracy.

  In addition, arrangement | positioning of each member is not restricted to what was illustrated. Further, a member such as a finger may not be provided, and a ball or the like provided on the rotor 2222 may close the tube 2212. The liquid feed pump 2200 as described above can be used for a medication device that administers a drug solution such as insulin to the human body. Here, since the drive current can be made smaller than that of a normal electric motor by using the piezoelectric drive device 100, the power consumption of the dosing device can be suppressed. Therefore, it is particularly effective when the medication apparatus is battery-driven.

  The above-described embodiments and modifications are merely examples, and the present invention is not limited to these. For example, it is possible to appropriately combine each embodiment and each modification.

  The present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

DESCRIPTION OF SYMBOLS 2 ... Adhesive, 3 ... Indentation part, 4 ... Rotor, 4a ... Center, 6 ... 1st seed layer, 7 ... 1st plating layer, 8 ... 2nd seed layer, 9 ... 2nd plating layer, 10 ... Board | substrate, DESCRIPTION OF SYMBOLS 10a ... 1st surface, 10b ... 2nd surface, 11a ... Silicon substrate, 11b ... Underlayer, 12 ... Vibrating body part, 12a ... Recessed part, 14 ... Support part, 16 ... 1st connection part, 18 ... 2nd connection part 20 ... contact part, 30, 30a, 30b,
30c, 30d, 30e ... piezoelectric element, 32 ... first electrode layer, 34 ... piezoelectric layer, 35 ... dummy piezoelectric layer, 36 ... second electrode layer, 40 ... first insulating layer, 40a ... inorganic insulating layer, 40b ... Organic insulating layer, 41 ... Upper surface, 42 ... Second insulating layer, 44 ... Third insulating layer, 45 ... Upper surface, 46 ... Fourth insulating layer, 50 ... First wiring layer, 50a ... First wiring portion, 50b ... 2nd wiring part, 51 ... upper surface, 52 ... 2nd wiring layer, 52a ... 1st wiring part, 52b ... 2nd wiring part, 53 ... upper surface, 60 ... 1st contact hole, 62 ... 2nd contact hole, 64 ... 3rd contact hole, 66 ... 4th contact hole, 70 ... 1st electroless plating layer, 72 ... 2nd electroless plating layer, 80 ... Metal layer, 100 ... Piezoelectric drive device, 101 ... Structure, 101a ... Bonding surface 102 ... Vibration unit, 102a ... First vibration unit 102b ... second vibration unit, 110 ... driving circuit, 120 ... motor, 200, 300, 400, 500,600 ... piezoelectric driving device, 2000 ... robot hand, 2003 ... grip, 2010 ... arm, 2012 ... link, 2020 ... Joint part, 2050 ... Robot, 2200 ... Liquid feed pump, 2202 ... Cam, 2202 A ... Projection part, 2211 ... Reservoir, 2212 ... Tube, 2213, 2214, 2215, 2216, 2217, 2218, 2219 ... Finger, 2222 ... Rotor , 2223 ... deceleration transmission mechanism, 2230 ... case

Claims (13)

A piezoelectric drive device including a plurality of vibration units,
The vibration unit is
A diaphragm,
A first electrode layer provided above the diaphragm;
A piezoelectric layer provided above the first electrode layer;
A second electrode layer provided above the piezoelectric layer;
A first wiring layer electrically connected to the second electrode layer;
A first insulating layer provided above the first electrode layer, the piezoelectric layer, and the second electrode layer;
Including
The upper surface of the first insulating layer and the upper surface of the first wiring layer are continuous,
The piezoelectric drive device, wherein the plurality of vibration units are arranged to overlap in a direction perpendicular to a plate surface of the diaphragm. In claim 1,
The first insulating layer includes
An inorganic insulating layer;
An organic insulating layer provided above the inorganic insulating layer;
A piezoelectric driving device. In claim 1 or 2,
A second insulating layer provided above the first insulating layer;
A second wiring layer provided above the second insulating layer and the first wiring layer and electrically connected to the first wiring layer;
A piezoelectric driving device. In claim 3,
The second wiring layer is
A first wiring portion electrically connected to the first electrode layer;
A second wiring portion electrically connected to the second electrode layer;
Have
A third insulating layer is provided between the first wiring portion and the second wiring portion;
The piezoelectric drive device, wherein an upper surface of the third insulating layer and an upper surface of the second wiring layer are continuous. In claim 3 or 4,
An electroless plating layer is provided on at least one of the first wiring layer and the second wiring layer,
The piezoelectric drive device, wherein the electroless plating layer is made of nickel. In any one of Claims 3 thru | or 5,
A metal layer is provided above the second wiring layer;
The piezoelectric drive device, wherein the metal layer of one of the vibration units adjacent to each other and the metal layer of the other vibration unit are metal-bonded to face each other. In any one of Claims 1 thru | or 6,
A dummy piezoelectric layer sandwiched between the first electrode layer and the first insulating layer is provided;
A piezoelectric driving device in which no voltage is applied to the dummy piezoelectric layer. Forming a plurality of vibration units;
Arranging a plurality of the vibration units so as to overlap in a direction perpendicular to a plate surface of the diaphragm;
Including
The step of forming the vibration unit includes:
Forming a first electrode layer above the diaphragm;
Forming a piezoelectric layer above the first electrode layer;
Forming a second electrode layer above the piezoelectric layer;
Forming a first insulating layer above the first electrode layer, the piezoelectric layer, and the second electrode layer so that the first electrode layer and the second electrode layer are exposed;
Forming a first wiring layer electrically connected to the exposed first electrode layer and the second electrode layer;
Removing the upper portion of the first wiring layer and continuing the upper surface of the first insulating layer and the upper surface of the first wiring layer;
A method for manufacturing a piezoelectric drive device comprising: In claim 8,
The step of forming the vibration unit includes:
Forming a second insulating layer above the first insulating layer;
Forming a third insulating layer above the second insulating layer;
Forming a second wiring layer electrically connected to the first wiring layer above the third insulating layer;
Removing the upper portion of the second wiring layer, and continuing the upper surface of the third insulating layer and the upper surface of the second wiring layer;
A method for manufacturing a piezoelectric drive device comprising: In claim 9,
The step of forming the vibration unit includes:
Forming a metal layer above the second wiring layer;
In the step of arranging a plurality of the vibration units,
A method for manufacturing a piezoelectric drive device, wherein the metal layer of one of the adjacent vibration units and the metal layer of the other vibration unit are metal-faced to face each other. A piezoelectric driving device according to any one of claims 1 to 7,
A rotor rotated by the piezoelectric drive device;
Including a motor. A plurality of link parts;
A joint part connecting a plurality of the link parts;
The piezoelectric drive device according to any one of claims 1 to 7, wherein a plurality of the link portions are rotated by the joint portions;
Including robots. A piezoelectric driving device according to any one of claims 1 to 7,
A tube that transports the liquid;
A plurality of fingers for closing the tube by driving the piezoelectric driving device;
Including a pump.

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