JP2017118029A - Substrate processing apparatus - Google Patents

Abstract

The present invention provides a substrate processing apparatus including a rectifying plate having a structure in which contamination and dripping are unlikely to occur. Another object of the present invention is to provide a substrate processing apparatus having a function capable of easily cleaning the current plate having such a structure. An FFU, a rectifying plate installed below the FFU and having a plurality of flow paths penetrating in a vertical direction, and installed below the rectifying plate, holding a substrate on the upper surface and vertically A substrate holding and rotating mechanism that rotates in a horizontal plane about a rotation axis, wherein the upper surface of the current plate has an upper surface inclined portion at least in part, and the upper surface inclined portion is The substrate processing apparatus is characterized in that a crossing position intersecting with the vertical rotation axis is at an uppermost position and is inclined obliquely downward from the crossing position toward the outside. [Selection] Figure 1

Description

The present invention relates to an apparatus for performing processing using a processing liquid on a substrate to be processed. Examples of substrates to be processed include various substrates such as semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma displays, photomask substrates, optical disk substrates, magnetic disk substrates, and magneto-optical disk substrates. . Hereinafter, these substrates are collectively referred to as wafers.

In a manufacturing process of a semiconductor device or a liquid crystal display device, a substrate processing apparatus that performs processing using a processing liquid on a wafer such as a semiconductor wafer is used. Such substrate processing apparatuses include a batch type that performs processing on a plurality of wafers W at once, and a single wafer type that performs processing on each wafer.
Such a substrate processing apparatus is configured to include an FFU, a processing liquid nozzle, a substrate holding and rotating device, etc. for each processing chamber partitioned by a partition for the purpose of, for example, controlling the atmosphere around the wafer and avoiding introduction of contamination from outside. Sometimes In a so-called multi-chamber system in which a substrate processing apparatus has a plurality of processing chambers, an FFU, a processing liquid nozzle, a substrate holding and rotating device, etc. are usually provided for each processing chamber.

In such a processing chamber (processing chamber), an FFU is provided above the processing chamber, and a gas subjected to a predetermined process such as decontamination is introduced to the lower portion of the processing chamber by a downflow. FFU
A substrate holding mechanism is provided below the FFU. However, if the FFU is directly opposed to the substrate holding device, etc., there may be variations in the direction and strength of the gas flow that strikes the substrate holding device, and hence the wafer during processing. There is a problem with the quality of processing. Therefore, for the purpose of adjusting variations in the direction and strength of downflow from the FFU, a so-called rectifying plate having a substantially plate shape and having a plurality of vertically penetrating openings is disposed immediately below the FFU. To be done.

A substrate processing apparatus including a current plate is described in Patent Document 1 and the like.

JP 2006-66501 A

When such a rectifying plate is used, since the rectifying plate is directly under the FFU, there is a case where a so-called “bottom drop” occurs in which the gas from the FFU condenses on the upper surface and falls from the opening. If the liquid dripping from the opening of the rectifying plate falls on the wafer held by the substrate holding mechanism directly below, there is a possibility that problems such as wafer contamination may occur.
Also, when processing liquid is applied from the processing liquid nozzle to the upper rectifying plate when the processing liquid is applied to the wafer held by a so-called spin chuck having a rotation mechanism connected to the substrate holding mechanism. There is. The processing liquid scattered on the lower surface of the current plate reaches the upper surface of the current plate through the opening of the current plate, causing contamination and dripping. There is a need to reduce the risk of such contamination and dripping.

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus including a rectifying plate having a structure in which contamination and dripping are unlikely to occur. Another object of the present invention is to provide a substrate processing apparatus having a function capable of easily cleaning the current plate having such a structure.

In order to achieve the above-mentioned object, the invention according to claim 1 includes an FFU (20) and a rectifying plate (5) installed below the FFU and having a plurality of flow paths (45) penetrating in the vertical direction. 40) and a substrate holding and rotating mechanism (60) that is installed below the current plate and holds the substrate (W) on its upper surface and rotates in a horizontal plane around the vertical rotation axis (65). In the apparatus (1), the upper surface (41) of the rectifying plate (40) has an upper surface inclined portion (42) at least in part, and the upper surface inclined portion (40) is the vertical rotation shaft. The substrate processing apparatus (1) is characterized in that the crossing position (66) intersecting with (65) is at the uppermost position and is inclined obliquely downwardly outward from the crossing position.

In addition, the alphanumeric characters in parentheses represent corresponding components and the like exemplified in the embodiments described later, and do not limit the contents of the invention. The same applies hereinafter.

According to the present invention, the liquid droplets generated on the upper surface of the current plate due to the presence of the upper surface inclined portion are excluded to the periphery of the current plate. In the substrate processing apparatus, dripping at the center of the wafer is the most serious problem in terms of contamination prevention and quality control. However, according to the present invention, dripping at the center of the wafer can be particularly reduced.

A second aspect of the present invention is the substrate processing apparatus (1) according to the first aspect, wherein an inclination angle of the upper surface inclined portion (42) decreases as it goes outward from the crossover position (66). The substrate processing apparatus (1) is characterized in that.

As the inclination angle of the current plate is increased, droplets generated on the upper surface of the current plate can be efficiently removed. On the other hand, if the inclination angle of the rectifying plate is too large, the rectifying action by the rectifying plate may be impaired.
According to this invention, since the inclination angle of the rectifying plate is maximized in the vicinity of the crossing position where the necessity of preventing dripping is high, and the inclination angle is reduced toward the outside, the rectifying action of the entire rectifying plate is It will not be damaged so much.

A third aspect of the present invention is the substrate processing apparatus (1) according to the first or second aspect, wherein each of the plurality of flow paths (45) is on the upper surface (41) side of the rectifying plate (40). The diameter of the opening of the substrate processing apparatus (1) is smaller than the average droplet diameter when the fluid supplied from the FFU (20) condenses on the upper surface (41). It is.

When the size of the opening on the current plate is smaller than the diameter of the droplet, the droplet is difficult to pass through the opening due to its surface tension. While these droplets are blocked from passing through the opening, they move to the periphery of the current plate due to the inclination of the current plate. On the other hand, the fluid from the FFU that does not condense and maintains the gas phase can pass through the opening. As described above, according to the present invention, it is possible to further suppress the dropping of the button from the opening while maintaining the function of the current plate.

According to a fourth aspect of the present invention, there is provided the substrate processing apparatus (1) according to the first to third aspects, wherein a surface of the upper inclined portion (42) is water repellent. 1).

According to this invention, since the surface of the upper surface inclined portion is water-repellent, droplets generated on the upper surface inclined portion of the current plate are more effectively moved to the periphery of the current plate.

A fifth aspect of the present invention is the substrate processing apparatus (1) according to the first to fourth aspects, wherein an auxiliary rectifying plate (50) is provided above or below the rectifying plate (40). The substrate processing apparatus.

When the rectifying plate has the upper surface inclined portion, the uniformity of the rectifying action of the fluid by the rectifying plate may be impaired. According to the present invention, it is possible to correct the disturbance of the rectifying action due to the presence of the upper inclined portion or the like by further providing the auxiliary rectifying plate.

A sixth aspect of the present invention is the substrate processing apparatus (1) according to the first to fifth aspects, wherein a processing liquid nozzle (80) for cleaning the upper surface (41) of the rectifying plate (40) is provided. The substrate processing apparatus (1) further includes the substrate processing apparatus (1).

According to this invention, since the upper surface of the current plate can be cleaned by the processing liquid nozzle, it is possible to reduce the risk of liquid dripping from the current plate to the wafer and contamination transfer.

A seventh aspect of the present invention is the substrate processing apparatus (1) according to the sixth aspect, wherein the processing liquid nozzle (80) supplies a processing liquid directed upward and a processing liquid directed downward. The substrate processing apparatus (1) is characterized in that both of the above can be performed.

According to this invention, it is possible to apply the processing liquid to the wafer by directing the processing liquid nozzle downward, and it is possible to apply the processing liquid to the current plate by directing the processing liquid nozzle upward. It becomes.

The invention according to an eighth aspect is the substrate processing apparatus (1) according to the sixth to seventh aspects, wherein at least a part of the processing liquid supplied from the processing liquid nozzle is supplied in a parallel direction. A substrate processing apparatus.

According to this invention, for example, when the processing liquid is supplied in a state where the processing liquid nozzle is disposed below the FFU and above the rectifying plate, the processing liquid is supplied to the rectifying plate so that the processing liquid is not applied to the FFU. It is possible.

A ninth aspect of the present invention is the substrate processing apparatus (1) according to the first to eighth aspects, wherein the rectifying plate (40) penetrates from the lower surface (44) to the upper surface (41). A second flow path (46), wherein the second flow path (46) extends vertically upward from the opening on the lower surface and outward from the vertical rotation axis to the opening on the upper surface. A substrate processing apparatus (1) characterized in that the substrate processing apparatus (1) includes

When the processing liquid is supplied toward the lower surface of the rectifying plate by the processing liquid nozzle, the processing liquid that has entered the second flow path enters the lower surface of the rectifying plate and then ejects outward from the vertical rotation shaft. To do. As a result, the processing liquid can be supplied to the upper surface of the current plate so that the processing liquid is not applied to the FFU.

FIG. 1 is a schematic cross-sectional view for explaining the configuration of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view for explaining the operation of the upper surface inclined portion of the rectifying plate. FIG. 3 is a schematic cross-sectional view showing an example of the shape of the upper surface inclined portion of the rectifying plate. FIG. 4 is a schematic cross-sectional view showing an example of the shape of the upper surface inclined portion of the rectifying plate. FIG. 5 is a schematic cross-sectional view showing an example of the shape of the upper surface inclined portion of the rectifying plate. FIG. 6 is a schematic cross-sectional view showing an example of the shape of the upper surface inclined portion of the rectifying plate. FIG. 7 is a schematic cross-sectional view for explaining the structure of the rectifying plate having the second flow path. FIG. 8 is a schematic cross-sectional view for explaining an arrangement example of auxiliary rectifying plates.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a schematic cross-sectional view for explaining the configuration of a substrate processing apparatus according to an embodiment of the present invention.
The substrate processing apparatus 1 is disposed inside a processing chamber 10 partitioned by a partition wall 1.
The substrate processing apparatus 1 includes an FFU 20 disposed in the upper part of the processing chamber 10, a rectifying plate 40 disposed below the FFU 20, and a substrate holding and rotating mechanism 60 disposed below the rectifying plate 40. The substrate processing apparatus 1 may further include a processing liquid nozzle 80 for supplying a processing liquid from a processing liquid tank (not shown) to the wafer W or the like through the processing liquid piping 81.
The partition wall 10 of the processing chamber 10 is provided with a drainage guide for receiving the fluid transmitted from the rectifying plate 40 and guiding it to the drainage line 17.

The FFU 20 has a substantially flat plate structure in which an upper surface and a lower surface are substantially planar, and has a plurality of supply ports (not shown) on the lower surface. The FFU 20 is fixed to the partition wall 15 by a fixing device (not shown) so that the lower surface thereof is substantially horizontal. By disposing the FFU 20 in this way, the gas supplied from the plurality of supply ports is supplied toward substantially below the FFU 20 to realize a so-called downflow state.

The rectifying plate 40 adjusts the flow of the downflow from the FFU 20 and ensures that the airflow is applied to the wafer W held by the substrate holding / rotating mechanism 60 below it in a direction and strength suitable for processing. It has a function. The requirements for the direction and strength of the downflow applied to the wafer W vary depending on the substrate processing apparatus and the process applied to the substrate, but generally speaking, the same direction and strength over the entire main surface of the wafer W. It is desirable that the airflow is supplied at.

The rectifying plate 40 has an upper surface 41 and a lower surface 44, and the upper surface 41 has a convex upper surface inclined portion 42 protruding upward and a substantially flat upper surface flat portion 43 surrounding the upper surface inclined portion 42. . The upper surface inclined portion 42 is formed such that a crossing position 66 that crosses a vertical rotation shaft 65 of a substrate holding and rotating mechanism to be described later is at the uppermost position.
The lower surface 44 of the rectifying plate 40 is formed in a substantially planar shape.
A plurality of flow paths 45 are formed in the rectifying plate 40 so as to penetrate from the upper surface 41 to the lower surface 44 in a substantially vertical direction. Downflow airflow from the FFU 20 is supplied to the lower side of the rectifying plate 40 through these flow paths 45.
The current plate 40 is fixed to the partition wall 15 by a fixing device (not shown) so that the lower surface 44 thereof is substantially horizontal. A drainage guide 16 is installed in the partition wall 15 slightly below the fixed position of the current plate 40. The drainage guide 16 has a function of guiding the liquid to a waste liquid line (not shown) below the processing chamber 10 after receiving the liquid transmitted from the rectifying plate 40.

A substrate holding and rotating mechanism 60 for holding and rotating the wafer W substantially horizontally is installed below the current plate 40. The substrate holding and rotating mechanism 60 includes a rotation driving mechanism base 63 fixed on the floor of the processing chamber 10, a rotation driving mechanism 62 that is disposed on the rotation driving mechanism base 63, and stores a rotation driving motor (not shown) therein. The rotary drive mechanism 62 has a function of transmitting the rotational force from the rotary drive mechanism 62 to the substrate holder 61, and is connected to the rotary drive shaft 64 that connects the rotary drive mechanism 62 and the substrate holder 61, and the upper end of the rotary drive shaft 64. And a rotation holding unit 61. The rotation holding portion 61 has a substantially cylindrical shape, and includes a plurality of support pins 68 for holding the wafer W horizontally at a peripheral portion on the upper surface thereof, and a mechanism for moving the support pins 68 (not shown).

In the processing chamber 10, a processing liquid nozzle 80 is provided for supplying a processing liquid such as a chemical liquid, a cleaning liquid, and pure water to the wafer W held by the substrate holding and rotating mechanism 60. The processing liquid nozzle 80 supplies a processing liquid carried from a processing liquid tank (not shown) outside the processing chamber 10 through a processing liquid pipe 81 by controlling a pump and a processing liquid valve (not shown). When the processing liquid needs to be supplied to the wafer W to a different position on the wafer, a moving mechanism for moving the processing liquid nozzle 80 is further provided.
The processing liquid nozzle 80 basically supplies the processing liquid vertically downward or slightly diagonally downward toward the wafer W held below it and held by the substrate holding and rotating mechanism 60. It is good also as a form which has a mechanism which reverses a process liquid supply direction so that a process liquid can also be supplied toward the vertically upward direction or the slightly diagonally upward direction in order to wash | clean the baffle plate 40 except at the time of a process. .
In addition, the processing liquid nozzle 80 is usually configured to supply the processing liquid so as to be supplied in the vertical direction or in a slightly oblique direction. However, the processing liquid nozzle 80 is directed in a substantially horizontal direction from the processing liquid nozzle 80. May be provided, or a dedicated nozzle for injecting the treatment liquid in a substantially horizontal direction may be provided. When there is a treatment liquid nozzle 80 that can eject the treatment liquid in the horizontal direction as described above, the treatment liquid nozzle 80 is disposed between the FFU 20 and the upper surface 41 of the rectifying plate 40, and the treatment liquid is disposed on the rectifying plate 40. By supplying so as to hit the upper surface inclined portion 42, it is possible to clean the upper surface 41 of the rectifying plate 40 so that the processing liquid is not directly applied to the FFU 20.

FIG. 2 is a schematic cross-sectional view for explaining the operation of the upper surface inclined portion of the rectifying plate.
Hereinafter, with reference to FIG. 2, the configuration of the rectifying plate 40 and the operation of the upper surface inclined portion 42 will be described.

The rectifying plate 40 has an upper surface 41 and a lower surface 44, and the upper surface 41 has a convex upper surface inclined portion 42 protruding upward and a substantially flat upper surface flat portion 43 surrounding the upper surface inclined portion 42. . The upper surface inclined portion 42 is formed such that a crossing position 66 that crosses a vertical rotation shaft 65 of a substrate holding and rotating mechanism to be described later is at the uppermost position.
The downflow airflow from the FFU 20 collides with the upper surface 41 of the rectifying plate 40, and a part of the airflow condenses into droplets. In addition to the liquid droplets thus formed, the liquid droplets scattered from the wafer W also adhere to the upper surface 41 of the rectifying plate 40 through the openings of the lower surface 44 of the rectifying plate 40. These droplets move so as to roll outward from the vertical rotation shaft 65 due to the inclination of the upper surface inclined portion 42. The material of the upper surface inclined portion 42 is made of a hydrophobic material so that the surface of the upper surface inclined portion 42 becomes hydrophobic, or the surface of the upper surface inclined portion 42 is coated with a hydrophobic substance, so that the upper surface inclined portion 42 The effect of removing droplets by 42 may be further enhanced.

When the liquid droplets thus moved reach the substantially flat upper surface flat portion 43 surrounding the upper surface inclined portion 42, a part of the liquid is volatilized, and even if it drops from the opening of the flow path 45 in the flat portion 43. The droplets are small enough not to cause significant damage to the wafer W.

The ratio of the upper surface inclined portion 42 to the upper surface flat portion 43 on the upper surface 41 of the rectifying plate 40 is determined by comprehensively considering the risk of dripping and the requirement for downflow airflow control. The upper surface inclined portion 42 has a function of efficiently removing droplets generated on the upper surface 41, but has a demerit that it disturbs the downflow airflow from the FFU 20 because of its shape. Generally speaking, since the risk of dripping on the wafer W is to be eliminated most in the vicinity of the central portion of the wafer W, the upper surface inclined portion 42 is in the vicinity of the central portion of the wafer W in plan view, for example, the wafer W. It is designed to overlap from the center to around one third of the radius.

In the following, FIGS. 3 to 7 are variations of the form of the upper inclined portion. In FIG. 3 to FIG. 7, the flow path 45 is not shown for simplicity.
FIG. 3 is a schematic cross-sectional view showing an example of the shape of the upper surface inclined portion of the rectifying plate.
Hereinafter, with reference to FIG. 3, an example of the variation of the form of the upper surface inclined portion will be described.

FIG. 3 is a schematic cross-sectional view showing an example of the shape of the upper surface inclined portion of the rectifying plate.
Hereinafter, with reference to FIG. 3, an example of the variation of the form of the upper surface inclination part 42 is demonstrated.
The upper surface inclined portion 42 shown in FIG. 3 has a substantially rectangular top 48 extending in the horizontal direction and two substantially planar inclined surfaces connected to the top 48. A plurality of channels 45 are formed in the upper inclined portion 42 at substantially equal intervals. The upper inclined portion shown in FIG. 4 is easy to process because the entire surface is a flat surface. Also, it is relatively easy to predict the effect of tilt on downflow fluctuations. In addition, about the shape of the upper surface inclination part 42, it is good also as a shape where the top part 48 is made into a ridgeline shape, and two inclined surfaces are combined with the said ridgeline substantially.

FIG. 4 is a schematic cross-sectional view showing a form example of the upper surface inclined portion 42 of the rectifying plate 40.
Hereinafter, with reference to FIG. 5, an example of the variation of the form of the upper surface inclined part 42 is demonstrated.

The difference between the upper surface inclined portion 42 shown in FIG. 4 and the upper surface inclined portion 42 shown in FIG. 3 is that in FIG. 4, the inclined surface connected at the top portion 48 has a curved surface that is concave downward. . In the upper surface inclined portion 42 formed in this way, the inclination angle of the upper surface inclined portion 42 becomes gentler toward the outside from the vertical rotation shaft 65. Accordingly, for the liquid dripping from the upper flow path 45 near the center of the wafer W where the risk of liquid dripping should be excluded, the inclination angle of the upper surface inclined portion 42 is steep, so that the liquid drops around the upper surface inclined portion 42. On the other hand, as it goes to the flow path 45 corresponding to the periphery of the wafer W where the risk of dripping is small, the droplet removal function is reduced, but the influence on the disturbance of the downflow can be suppressed.

FIG. 5 is a schematic cross-sectional view showing a form example of the upper surface inclined portion 42 of the rectifying plate 40.
Hereinafter, with reference to FIG. 5, an example of the variation of the form of the upper surface inclined part 42 is demonstrated.

5 and the top slope portion 42 shown in FIG. 4 are such that the slope angle of the top slope portion 42 becomes gentler toward the outside from the vertical rotation shaft 65. is there. 4, the inclined surface is formed with a curved surface, whereas in FIG. 5, the second upper surface inclined portion having a smaller inclination angle than the upper surface inclined portion 42 at the base of the upper surface inclined portion 42. Is connected.

FIG. 6 is a schematic cross-sectional view showing a form example of the upper surface inclined portion 42 of the rectifying plate 40.
Hereinafter, with reference to FIG. 6, an example of the variation of the form of the upper surface inclined portion 42 will be described.
In the upper surface inclined portion 42 shown in FIG. 6, the entire upper surface of the upper surface inclined portion 42 is formed to be a curved surface that protrudes upward with the intersection position 66 with the vertical rotation shaft 65 as a vertex.

FIG. 7 is a schematic cross-sectional view for explaining the structure of the rectifying plate having the second flow path.
Hereinafter, the rectifying plate 40 having the second flow path 46 will be described with reference to FIG.
In FIG. 7, the flow path 45 is not shown for simplicity.

The rectifying plate 40 may include a second flow path 46 described below in addition to the plurality of flow paths 45 described above or as an alternative to a part of the plurality of flow paths.
The main difference between the flow channel 45 and the second flow channel 46 is the direction of the flow channel in the vicinity of the opening in the upper surface 41 of the rectifying plate 40.
The flow path 45 is formed so as to penetrate the upper surface 41 and the lower surface 44 of the rectifying plate 40 in the vertical direction. On the other hand, in the second flow path 46, the flow path is formed substantially vertically upward from the opening in the lower surface 44, and the flow channel formation direction changes from the vertical rotation shaft 65 to the outer side until reaching the upper surface 41. To the opening of the upper surface 41.

By providing such a second flow path 46, the upper surface 41 of the rectifying plate 40 can be easily cleaned. That is, when the processing liquid is supplied from the processing liquid nozzle 80 toward the lower surface 44 from below the rectifying plate 40, the processing liquid that has passed through the second flow path 46 is outward from the vertical rotation axis from the opening of the upper surface 41. Therefore, the upper surface 41 of the current plate 40 can be cleaned so that the processing liquid is hardly applied to the FFU 20.
Such second flow paths may be formed only in the vicinity of the vertical rotation shaft 65 in the upper surface inclined portion 42 of the rectifying plate 40, or a plurality of such second flow paths may be formed over the entire upper surface inclined portion 42.

FIG. 8 is a schematic cross-sectional view for explaining an arrangement example of auxiliary rectifying plates.
A difference from FIG. 1 is that an auxiliary rectifying plate 50 is arranged in FIG.
Hereinafter, the relationship between the auxiliary rectifying plate 50 and the rectifying plate 40 will be described with reference to FIG.

As described above, the presence of the upper surface inclined portion 42 of the current plate 40 reduces the risk of dripping, but the convex shape of the upper surface inclined portion 42 disturbs the downflow from the FFU 20. There is a fear. Therefore, in order to cancel such disturbance of the downflow, the auxiliary rectifying plate 50 may be arranged above or below the rectifying plate 40.
The auxiliary rectifying plate 50 has a substantially flat plate shape and includes a plurality of flow paths 51 penetrating in the vertical direction.

As mentioned above, although embodiment of this invention was described, the embodiment of this invention can give a various design change in the range of the matter described in the claim.

For example, in the above description of the embodiment of the present invention, the upper surface 41 of the rectifying plate 40 has the upper surface inclined portion 42 and the upper surface flat portion 43 surrounding the upper surface inclined portion 42. However, the entire surface of the upper surface 41 of the rectifying plate 40 may be the upper surface inclined portion 42.

In addition, the substrate processing apparatus 1 according to the present invention may be configured to include a dedicated nozzle mechanism for cleaning the rectifying plate 40.

In addition, various modifications can be made to the embodiments within the scope of the claims, within the scope of the present invention disclosed in the specification, claims, and drawings attached to the application. It is.

W Wafer 1 Substrate processing apparatus 10 Processing chamber 15 Partition 16 Drainage guide 17 Drainage line 20 FFU
40 rectifying plate 41 upper surface 42 upper surface inclined portion 43 upper surface flat portion 44 lower surface 45 channel 46 second channel 48 top 50 auxiliary rectifying plate 51 channel 60 substrate holding rotation mechanism 61 substrate holding unit 62 rotation driving mechanism 63 rotation driving mechanism Pedestal 64 Rotation drive shaft 65 Vertical rotation shaft 66 Crossing position 68 Support pin 80 Processing liquid nozzle 81 Processing liquid piping 82 Discharge port 83 Nozzle rotation mechanism 85 Horizontal discharge port

Claims (9)

FFU,
A rectifying plate that is installed below the FFU and has a plurality of flow paths that penetrate in the vertical direction;
A substrate processing apparatus, comprising: a substrate holding and rotating mechanism that is installed below the current plate and holds a substrate on its upper surface and rotates in a horizontal plane around a vertical rotation axis;
The upper surface of the rectifying plate has an upper surface inclined portion at least in part thereof,
The substrate processing apparatus, wherein the upper surface inclined portion has an uppermost crossing position intersecting with the vertical rotation axis, and is inclined obliquely downwardly outward from the crossing position. The substrate processing apparatus according to claim 1, wherein
The substrate processing apparatus, wherein an inclination angle of the upper inclined portion becomes smaller as it goes outward from the crossing position. The substrate processing apparatus according to claim 1, wherein:
For each of the plurality of flow paths, the diameter of the opening on the upper surface side of the rectifying plate is smaller than the average droplet diameter when the fluid supplied from the FFU condenses on the upper surface portion. A substrate processing apparatus. The substrate processing apparatus according to claim 1, wherein
A substrate processing apparatus, wherein the surface of the upper inclined portion is water repellent. The substrate processing apparatus according to claim 1, wherein:
A substrate processing apparatus, wherein an auxiliary rectifying plate is provided above or below the rectifying plate. The substrate processing apparatus according to claim 1, wherein:
A substrate processing apparatus, further comprising a processing liquid nozzle for cleaning an upper surface of the current plate. The substrate processing apparatus according to claim 6, wherein
The substrate processing apparatus, wherein the processing liquid nozzle is capable of both supplying a processing liquid directed upward and supplying a processing liquid directed downward. The substrate processing apparatus according to any one of claims 6 to 7,
At least a part of the processing liquid supplied from the processing liquid nozzle is supplied in a parallel direction. The substrate processing apparatus according to claim 1, wherein
The baffle plate further comprises a second flow path through the lower surface to the upper surface;
The substrate processing apparatus, wherein the second flow path has a portion that extends vertically upward from the opening on the lower surface and a portion that extends outward from the vertical rotation axis and toward the opening on the upper surface.

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