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JP2017108365A - Piezoelectric vibrator and manufacturing method thereof - Google Patents

Piezoelectric vibrator and manufacturing method thereof Download PDF

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JP2017108365A
JP2017108365A JP2016042947A JP2016042947A JP2017108365A JP 2017108365 A JP2017108365 A JP 2017108365A JP 2016042947 A JP2016042947 A JP 2016042947A JP 2016042947 A JP2016042947 A JP 2016042947A JP 2017108365 A JP2017108365 A JP 2017108365A
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excitation electrode
piezoelectric
piezoelectric vibrator
manufacturing
electrode
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山口 寛
Hiroshi Yamaguchi
寛 山口
上條 敦
Atsushi Kamijo
敦 上條
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Nihon Dempa Kogyo Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a piezoelectric vibrator which comprises an excitation electrode containing silver as a main component, improves a frequency aging property and is made inexpensive.SOLUTION: A piezoelectric vibrator 10 comprises: a crystal piece 11; and an excitation electrode 13a consisting of a laminated film of adhesive layers 13aa provided on front and rear sides of the crystal piece 11, and a thin film 13ab provided on the adhesive layer 13aa, containing aluminum in 1 to 15 atomic wt.% and containing silver as a main component. The crystal piece 11 comprising the excitation electrode 13a is connected and fixed, at a position of a terminal electrode 13b, to a support pad 15b within a recess 15a of a container 15 by a conductive adhesive 19 and the container 15 is made airtight and sealed by a lid member 17.SELECTED DRAWING: Figure 1

Description

本発明は、励振用電極に特徴を有する圧電振動子およびその製造方法に関する。   The present invention relates to a piezoelectric vibrator characterized by an excitation electrode and a method for manufacturing the same.

圧電振動子の代表例として、ATカット水晶振動子が知られている。例えば表面実装型のATカット水晶振動子(SMD水晶振動子)は、励振用電極及び端子電極を両主面に具える水晶片が、セラミックパッケージ内の支持パッドに前記端子電極の位置で導電性接着剤により固定され、この容器が気密封止された構造を有する。この種の水晶振動子の製造工程では、上記の電極、水晶片及びパッケージ等の各部材に熱が及ぶ。用いる接着剤の種類や封止方式の違いによるが、接着剤の熱硬化工程と気密封止工程においては、上記各部材は250℃〜450℃の高温状態に置かれる。   As a typical example of a piezoelectric vibrator, an AT-cut quartz crystal vibrator is known. For example, in a surface-mount type AT-cut crystal resonator (SMD crystal resonator), a crystal piece having an excitation electrode and a terminal electrode on both main surfaces is electrically conductive at a position of the terminal electrode on a support pad in a ceramic package. The container is fixed with an adhesive, and the container is hermetically sealed. In the manufacturing process of this type of crystal unit, heat is applied to each member such as the electrode, crystal piece, and package. Depending on the type of adhesive used and the difference in the sealing method, each member is placed in a high temperature state of 250 ° C. to 450 ° C. in the thermosetting process and the hermetic sealing process of the adhesive.

電極材料としては、蒸着法やスパッタ法により形成した金(Au)や銀(Ag)が使用されている。Au電極を具えた水晶振動子では、高い長期周波数安定性(エージング特性)が得られるが、材料コストが高いという問題がある。一方、Ag電極を具えた水晶振動子では、Au電極に比べ安価ではあるが、長期周波数安定性が劣るという問題がある。
Ag電極を具えた水晶振動子の周波数の経時変化は、気密封止工程の熱により、Ag電極が凝集することが原因と考えられる。すなわち、パッケージ内壁や接着剤、封止雰囲気からのガスの吸着や、酸化及び又は硫化による励振電極の質量変化が起こることが知られているが、凝集によりAg電極の表面積が増加し、ガスの吸着や表面酸化量及び又は表面硫化量が増えることが周波数変動の原因であると推定される。
As the electrode material, gold (Au) or silver (Ag) formed by vapor deposition or sputtering is used. In a crystal resonator provided with an Au electrode, high long-term frequency stability (aging characteristics) can be obtained, but there is a problem that the material cost is high. On the other hand, a quartz resonator including an Ag electrode is less expensive than an Au electrode, but has a problem that long-term frequency stability is inferior.
The change with time in the frequency of the crystal resonator including the Ag electrode is considered to be caused by aggregation of the Ag electrode due to heat in the hermetic sealing process. That is, it is known that gas adsorption from the package inner wall, adhesive, and sealing atmosphere, and mass change of the excitation electrode due to oxidation and / or sulfidation occur. It is presumed that the frequency fluctuation is caused by an increase in the amount of adsorption, surface oxidation and / or surface sulfidation.

Ag薄膜における凝集を抑えるためには、微量金属の添加が有効であることが知られている。例えば特許文献1では、ビスマス(Bi)及び又はアンチモン(Sb)を合計で0.005〜0.40%(原子量%の意味)含有するAg基合金が、特許文献2では、インジウム(In)を0.1〜1.8原子量%を含有し、残部がAg及び不可避不純物からなる成分組成のAg−In合金が、開示されている。   In order to suppress aggregation in the Ag thin film, it is known that addition of trace metals is effective. For example, in Patent Document 1, an Ag-based alloy containing bismuth (Bi) and / or antimony (Sb) in a total amount of 0.005 to 0.40% (meaning atomic weight%), In Patent Document 2, indium (In) is contained. An Ag—In alloy having a composition of 0.1 to 1.8 atomic weight%, the balance being Ag and inevitable impurities is disclosed.

いずれも、Agの凝集による光の反射率劣化を抑えることを目的とした技術であるが、添加した金属(Bi、Sb、あるいはIn)を薄膜表面上に偏析層として析出させ、該表面偏析層が大気中の酸素に曝されることによって安定した酸化膜が形成されることで凝集が抑制され、反射率劣化が防止できるというものである。
また、特許文献3には、Agを主成分としパラジウム(Pd)と銅(Cu)を添加したAg合金、あるいはAgを主成分としPdとチタン(Ti)を添加したAg合金を励振用電極に用いた圧電振動子が開示されている。この圧電振動子では、良好なエージング特性が得られるという。
Both are technologies aimed at suppressing light reflectance deterioration due to Ag aggregation, but the added metal (Bi, Sb, or In) is deposited on the thin film surface as a segregation layer, and the surface segregation layer As a result of exposure to oxygen in the atmosphere, a stable oxide film is formed, so that aggregation is suppressed and reflectance deterioration can be prevented.
Further, in Patent Document 3, an Ag alloy containing Ag as a main component and adding palladium (Pd) and copper (Cu), or an Ag alloy containing Ag as a main component and containing Pd and titanium (Ti) as an excitation electrode. The piezoelectric vibrator used is disclosed. This piezoelectric vibrator is said to have good aging characteristics.

特開2004−139712号公報JP 2004-139712 A 特開2014−19932号公報JP 2014-19922 A 特開2001−44785号公報JP 2001-44785 A

しかしながら、水晶振動子の製造工程では、電極膜をイオンビームやレーザーにより削ることによって、振動子の共振周波数を調整する工程があるため、特許文献1や2のようなAg合金を水晶振動子電極として用いると、凝集抑制として形成されている表面偏析層が周波数調整時に削り取られてしまい、凝集抑制の効果が大きく低下してしまい、経時変化による周波数変動が小さくならないという問題がある。   However, in the manufacturing process of the crystal resonator, there is a step of adjusting the resonance frequency of the resonator by scraping the electrode film with an ion beam or a laser. When used as, the surface segregation layer formed as agglomeration suppression is scraped off during frequency adjustment, and the agglomeration suppression effect is greatly reduced, and there is a problem that frequency fluctuation due to a change with time is not reduced.

また、特許文献3の場合、高価なパラジウムを用いること、さらに3元の合金であるため、蒸着法であってもスパッタ法であっても、電極膜の組成を管理するのが容易でなく、Au電極振動子と同程度の原価になってしまうという問題がある。   In addition, in the case of Patent Document 3, since expensive palladium is used and it is a ternary alloy, it is not easy to manage the composition of the electrode film, whether it is a vapor deposition method or a sputtering method, There is a problem that the cost is about the same as that of the Au electrode vibrator.

この出願はこのような点に鑑みなされたものであり、従って、この出願の目的は、周波数エージング特性に優れ、かつ安価な電極材料の圧電振動子およびそれに用いて好適な製造方法を提供することにある。   The present application has been made in view of the above points, and therefore the object of the present application is to provide a piezoelectric vibrator of an electrode material which is excellent in frequency aging characteristics and is inexpensive, and a manufacturing method suitable for the piezoelectric vibrator. It is in.

この目的の達成を図るため、この出願の圧電振動子の発明によれば、銀を主成分とする励振用電極を具える圧電振動子において、前記励振用電極はアルミニウムを1〜15原子量%含むものであることを特徴とする。好ましくは、前記励振用電極はアルミニウムを1〜10原子量%含むものであることを特徴とする。より好ましくは、前記励振用電極はアルミニウムを5〜10原子量%含むものであることを特徴とする。以下の説明では、この発明でいうAlを上記範囲で含みAgを主成分とする膜を、「Ag−Al合金膜」ともいう。
なお、この発明を実施するに当たり、励振用電極は、Ag−Al合金膜のみで構成しても良いが、Ag−Al合金膜の圧電片への密着性向上を図るための密着層と、Ag−Al合金膜との積層膜で構成するのが好適である。従って、本発明の好適例の圧電振動子は、圧電片と、この圧電片の表裏面に形成された密着層及びこの密着層上に形成されたAg−Al合金膜から成る励振用電極と、を具えた構造の圧電振動子である。
In order to achieve this object, according to the invention of the piezoelectric vibrator of this application, in the piezoelectric vibrator having the excitation electrode mainly composed of silver, the excitation electrode contains 1 to 15 atomic weight% of aluminum. It is characterized by that. Preferably, the excitation electrode contains 1 to 10 atomic% of aluminum. More preferably, the excitation electrode contains 5 to 10 atomic% of aluminum. In the following description, a film containing Al in the above range and containing Ag as a main component is also referred to as an “Ag—Al alloy film”.
In carrying out the present invention, the excitation electrode may be composed of only an Ag—Al alloy film, but an adhesion layer for improving the adhesion of the Ag—Al alloy film to the piezoelectric piece, and Ag -It is preferable to comprise a laminated film with an Al alloy film. Therefore, a piezoelectric vibrator of a preferred embodiment of the present invention includes a piezoelectric piece, an adhesion layer formed on the front and back surfaces of the piezoelectric piece, and an excitation electrode composed of an Ag-Al alloy film formed on the adhesion layer, This is a piezoelectric vibrator having a structure.

また、一般的な圧電振動子では、励振用電極とこれに接続していて励振電極と一体に形成される端子電極を、圧電片の表裏面に具えている。従って、この発明を実施するに当たり、典型的には、この引出電極もAg−Al合金膜で構成するか、又は、上記好適例のように密着層とAg−Al合金膜との積層膜で構成する。ただし、引出電極をAg−Al合金膜とは異なる材料や組成の薄膜で構成する場合も、本発明に含まれる。   In general piezoelectric vibrators, excitation electrodes and terminal electrodes connected to and formed integrally with the excitation electrodes are provided on the front and back surfaces of the piezoelectric piece. Therefore, in carrying out the present invention, typically, the extraction electrode is also composed of an Ag—Al alloy film, or a laminated film of an adhesion layer and an Ag—Al alloy film as in the above preferred example. To do. However, the present invention includes a case where the extraction electrode is formed of a thin film having a material or composition different from that of the Ag—Al alloy film.

一方、この出願の圧電振動子の製造方法の発明(以下、製造方法の第一の発明ともいう)によれば、アルミニウムを1〜15原子量%含み銀を主成分とする励振用電極(Ag−Al合金膜)を、好ましくはアルミニウムを1〜10原子量%含み銀を主成分とする励振用電極(Ag−Al合金膜)を、より好ましくはアルミニウムを5〜10原子量%含み銀を主成分とする励振用電極(Ag−Al合金膜)を、圧電片の表裏面に、例えばスパッタ法、蒸着法等の任意好適な成膜法で形成した後に、この構造体に対し250〜450℃の熱処理を施すことを特徴とする。
この熱処理によれば、Ag−Al合金膜に添加されたAlをこの膜表面に偏析させることができる。しかも、この表面偏析したAlを、当該熱処理により、または、当該熱処理後に任意に実施する大気暴露、酸素ガスへの暴露により酸化させることで、安定な酸化膜(以下、保護膜と記す)で電極表面を被覆することができる。また、当該熱処理は、周波数調整工程の後に行っても良い。こうすれば、周波数調整時のイオンミリングやレーザーミリングで保護膜が減少又は消失したとしても、保護膜を修復することができる。
On the other hand, according to the invention of the piezoelectric vibrator manufacturing method of the present application (hereinafter also referred to as the first invention of the manufacturing method), the excitation electrode (Ag- Al alloy film), preferably an excitation electrode (Ag-Al alloy film) containing 1 to 10 atomic% of aluminum and containing silver as a main component, more preferably 5 to 10 atomic% of aluminum and containing silver as a main ingredient. An excitation electrode (Ag—Al alloy film) to be formed is formed on the front and back surfaces of the piezoelectric piece by any suitable film formation method such as sputtering or vapor deposition, and then the structure is heat-treated at 250 to 450 ° C. It is characterized by giving.
According to this heat treatment, Al added to the Ag—Al alloy film can be segregated on the film surface. In addition, the surface segregated Al is oxidized by the heat treatment, or optionally after the heat treatment by exposure to the atmosphere or exposure to oxygen gas, thereby forming a stable oxide film (hereinafter referred to as a protective film). The surface can be coated. Moreover, you may perform the said heat processing after a frequency adjustment process. In this way, even if the protective film is reduced or eliminated by ion milling or laser milling during frequency adjustment, the protective film can be repaired.

上記の熱処理を施す製法は以下のような背景から主張するものである。すなわち、本発明のAg−Al合金膜を圧電片に任意好適な成膜法で形成した後は、通常は、圧電振動子の製造工程での熱処理、例えば圧電片をパッケージに固定する接着剤の硬化のための熱処理や気密封止工程での熱処理がAg−Al合金膜に及ぶので、上記の保護膜の形成や修復は製造工程中で担保される。しかし、この製造方法の発明のように、積極的に当該処理を実施することにより、保護膜の形成や修復が確実に行える。従って、この製造方法を用いると好ましい場合がある。   The manufacturing method for performing the above heat treatment is claimed from the following background. That is, after the Ag—Al alloy film of the present invention is formed on the piezoelectric piece by any suitable film forming method, the heat treatment in the manufacturing process of the piezoelectric vibrator, for example, an adhesive for fixing the piezoelectric piece to the package Since the heat treatment for curing and the heat treatment in the hermetic sealing process reach the Ag—Al alloy film, the formation and repair of the protective film are ensured during the manufacturing process. However, as in the invention of the manufacturing method, the protective film can be reliably formed or repaired by positively performing the treatment. Therefore, it may be preferable to use this manufacturing method.

ここで、熱処理を実施する場合の温度を250〜450℃とした理由は、この温度が低すぎてはアルミニウムを電極表面に偏析させる効果が少ないため処理時間を長く必要とする等のデメリットが生じ、この温度が高すぎては電極自体や水晶片固定用の接着剤等の他の部材に副作用を生じさせる可能性があり、また、必要以上の熱処理装置を準備することになり、好ましくないからである。なお、この熱処理を行う雰囲気は、圧電振動子の設計に応じ任意に選択できる。特に制限がなければ、窒素雰囲気が良い。   Here, the reason for setting the temperature in the case of performing the heat treatment to 250 to 450 ° C. is that there is a demerit such as requiring a long processing time because the effect of segregating aluminum on the electrode surface is small if this temperature is too low. If the temperature is too high, it may cause side effects on other members such as the electrode itself and the adhesive for fixing the crystal piece, and more heat treatment devices than necessary will be prepared, which is not preferable. It is. The atmosphere in which this heat treatment is performed can be arbitrarily selected according to the design of the piezoelectric vibrator. Unless otherwise limited, a nitrogen atmosphere is good.

また、この出願の圧電振動子の別の観点の製造方法の発明(以下、製造方法の第二の発明ともいう。)によれば、銀を主成分としアルミニウムを含む励振用電極(Ag−Al合金膜)を圧電片の表裏に形成する工程と、前述の励振用電極を形成した圧電片に周波数調整を行う工程と、前述の周波数調整が済んだ圧電片を封止する工程と、を含む圧電振動子の製造方法において、前述の周波数調整は、前述の封止工程で生じる周波数シフト量を考慮して行うことを特徴とする。
この製造方法の第二の発明によれば、封止工程で生じる熱が当該励振電極に保護膜を生じさせ、及び又は、当該励振電極を修復する等を生じさせ、当該圧電振動子の周波数を封止前後でシフトさせた場合でも、そのシフト量をキャンセルするように周波数調整が行われるので、所望の周波数で発振しかつ周波数エージング特性に優れた圧電振動子を得ることができる。なお、上記の周波数シフト量は、励振電極の組成特にAlの添加量、封止条件(例えば封止雰囲気の酸素濃度、封止温度等)により変わる。従って、この第二発明を実施する際は、周波数シフト量を予め把握しておき、このシフト量に応じて周波数調整の設定値を決めて、周波数調整を行う。
なお、製造方法の第二の発明を実施するに当たり、励振電極として形成するAg−Al合金膜は、アルミニウムを5〜10原子量%含み銀を主成分とする励振用電極(Ag−Al合金膜)とするのが良い。このような組成のAg−Al合金膜は、そうでない場合に比べ、上記の周波数シフト量の再現性が高いため(図5参照)、水晶振動子の周波数調整精度を高め易いからである。
In addition, according to the invention of the manufacturing method of the piezoelectric vibrator according to another aspect of the present application (hereinafter also referred to as the second invention of the manufacturing method), the excitation electrode (Ag-Al) containing silver as a main component and aluminum. An alloy film) on the front and back of the piezoelectric piece, a step of adjusting the frequency of the piezoelectric piece on which the excitation electrode is formed, and a step of sealing the piezoelectric piece on which the frequency adjustment is completed. In the method for manufacturing a piezoelectric vibrator, the above-described frequency adjustment is performed in consideration of a frequency shift amount generated in the above-described sealing process.
According to the second invention of this manufacturing method, the heat generated in the sealing process causes a protective film on the excitation electrode and / or repairs the excitation electrode. Even when the shift is performed before and after sealing, the frequency adjustment is performed so as to cancel the shift amount, so that a piezoelectric vibrator that oscillates at a desired frequency and has excellent frequency aging characteristics can be obtained. The frequency shift amount varies depending on the composition of the excitation electrode, particularly the amount of Al added, and the sealing conditions (for example, oxygen concentration in the sealing atmosphere, sealing temperature, etc.). Therefore, when carrying out the second invention, the frequency shift amount is grasped in advance, the set value of the frequency adjustment is determined according to the shift amount, and the frequency adjustment is performed.
In carrying out the second invention of the manufacturing method, the Ag-Al alloy film formed as the excitation electrode is an excitation electrode (Ag-Al alloy film) containing 5 to 10 atomic percent of aluminum and containing silver as a main component. It is good to do. This is because the Ag—Al alloy film having such a composition has higher reproducibility of the above-described frequency shift amount than the other cases (see FIG. 5), and therefore it is easy to improve the frequency adjustment accuracy of the crystal resonator.

この出願の圧電振動子およびその製造方法によれば、エージング特性に優れ、かつ安価な電極材料の圧電振動子を提供することができる。   According to the piezoelectric vibrator and the manufacturing method thereof of this application, it is possible to provide a piezoelectric vibrator having an aging characteristic and an inexpensive electrode material.

(A)、(B)は、実施形態の圧電振動子10の説明図である。(A), (B) is explanatory drawing of the piezoelectric vibrator 10 of embodiment. (A)、(B)は、実施例及び比較例の圧電振動子の励振用電極の、表面分析結果を説明する図である。(A), (B) is a figure explaining the surface analysis result of the electrode for excitation of the piezoelectric vibrator of an Example and a comparative example. (A)〜(D)は、実施例及び比較例の圧電振動子の、励振用電極の表面状態を説明する図である。(A)-(D) is a figure explaining the surface state of the electrode for excitation of the piezoelectric vibrator of an Example and a comparative example. (A),(B)は、実施例及び比較例の圧電振動子の、周波数エージング特性を説明する図である。(A), (B) is a figure explaining the frequency aging characteristic of the piezoelectric vibrator of an Example and a comparative example. は、Ag−Al合金電極膜中のAl添加量と封止前後の周波数シフト量との関係を説明する図である。These are the figures explaining the relationship between the amount of Al addition in an Ag-Al alloy electrode film, and the amount of frequency shifts before and behind sealing. は、周波数シフト量を考慮して調整した実施例の圧電振動子の、周波数エージング特性を説明する図である。FIG. 6 is a diagram illustrating frequency aging characteristics of the piezoelectric vibrator of the example adjusted in consideration of the amount of frequency shift. は、Ag−Al合金電極膜中のAl添加量とその電極表面のAl組成との関係を説明する図である。These are the figures explaining the relationship between the amount of Al addition in an Ag-Al alloy electrode film, and the Al composition of the electrode surface.

以下、図面を参照してこの発明の圧電振動子及びその製造方法の実施形態について説明する。なお、説明に用いる各図はこの発明を理解できる程度に概略的に示してあるにすぎない。また、説明に用いる各図において、同様な構成成分については同一の番号を付して示し、その説明を省略する場合もある。また、以下の説明中で述べる形状、寸法、材質、周波数等はこの発明の範囲内の好適例に過ぎない。従って、本発明は以下の実施形態のみに限定されるものではない。   Hereinafter, embodiments of a piezoelectric vibrator and a manufacturing method thereof according to the present invention will be described with reference to the drawings. It should be noted that the drawings used for the description are merely schematically shown to the extent that the present invention can be understood. Moreover, in each figure used for description, about the same component, it attaches | subjects and shows the same number, The description may be abbreviate | omitted. In addition, the shape, dimensions, material, frequency, and the like described in the following description are merely preferred examples within the scope of the present invention. Therefore, the present invention is not limited only to the following embodiments.

1. 圧電振動子の構造
先ず、実施形態の圧電振動子10としてSMD型の水晶振動子の構造について説明する。図1はその説明図であり、特に(A)図は圧電振動子10の平面図であり、(B)図は図(A)中のP−P線に沿って切った圧電振動子10の断面図である。なお、(A)図では圧電振動子10の蓋部材17の図示を省略してある。
1. Structure of Piezoelectric Vibrator First, the structure of an SMD type crystal vibrator as the piezoelectric vibrator 10 of the embodiment will be described. FIG. 1 is an explanatory diagram thereof, in particular, FIG. 1A is a plan view of the piezoelectric vibrator 10, and FIG. 1B is a diagram of the piezoelectric vibrator 10 cut along the line P-P in FIG. It is sectional drawing. In FIG. (A), illustration of the lid member 17 of the piezoelectric vibrator 10 is omitted.

実施形態の圧電振動子10は、水晶片11と、励振用電極13a及び端子電極13bからなる電極13と、容器15と、蓋部材17と、を具える。
水晶片11は、平面形状が矩形(略矩形も含む)のATカット水晶片である。また、電極13の励振用電極13a及び端子電極13bは、一体形成されていて、かつ、密着層13aaとこの発明に係るAg−Al合金膜(Ag基合金薄膜)13abとの積層膜である。また、容器15は、この場合、凹部15aを有したセラミックパッケージである。蓋部材17は、気密封止方式に応じた公知のものである。
The piezoelectric vibrator 10 according to the embodiment includes a crystal piece 11, an electrode 13 including an excitation electrode 13 a and a terminal electrode 13 b, a container 15, and a lid member 17.
The crystal piece 11 is an AT-cut crystal piece having a rectangular planar shape (including a substantially rectangular shape). Further, the excitation electrode 13a and the terminal electrode 13b of the electrode 13 are integrally formed, and are a laminated film of the adhesion layer 13aa and the Ag—Al alloy film (Ag-based alloy thin film) 13ab according to the present invention. In this case, the container 15 is a ceramic package having a recess 15a. The lid member 17 is a known member corresponding to the hermetic sealing method.

電極13を具えたこの水晶片11は、容器15の凹部15a内に設けた支持パッド15bに、端子電極13bの位置で導電性接着剤19により接続固定してある。なお、容器15は、その底面に外部接続端子15cを具えている。この外部接続端子15cと上記の支持パッド15bとは、図示しないビア配線により電気的に接続してある。
ここで、密着層13aaは、クロム(Cr)、チタン(Ti)、ニッケル(Ni)、アルミニウム(Al)などのように、水晶片11とAg−Al合金膜13abとの間に十分な密着性が得られる金属であれば任意のものとできる。また、密着層13aaの膜厚は特に限定されないが、0.5〜10nmの範囲内であれば十分な密着性が得られる。
また、密着層13aaおよびAg−Al合金膜13abは、例えば抵抗加熱方式や電子ビーム方式の蒸着法、またはスパッタ法にて成膜できる。
The crystal piece 11 provided with the electrode 13 is connected and fixed to the support pad 15b provided in the recess 15a of the container 15 by the conductive adhesive 19 at the position of the terminal electrode 13b. The container 15 includes an external connection terminal 15c on the bottom surface. The external connection terminal 15c and the support pad 15b are electrically connected by via wiring (not shown).
Here, the adhesion layer 13aa has sufficient adhesion between the crystal piece 11 and the Ag-Al alloy film 13ab, such as chromium (Cr), titanium (Ti), nickel (Ni), aluminum (Al). Any metal can be used as long as it can be obtained. Further, the thickness of the adhesion layer 13aa is not particularly limited, but sufficient adhesion can be obtained as long as it is in the range of 0.5 to 10 nm.
The adhesion layer 13aa and the Ag—Al alloy film 13ab can be formed by, for example, resistance heating method, electron beam evaporation method, or sputtering method.

上記のように容器15に収納固定した電極付きの水晶片11に対し、イオンビームあるいはレーザーにより、励振用電極13aの表面をトリミングし、所定の周波数に調整した後、蓋部材17を容器15上に被せ、窒素雰囲気等の圧電振動子の設計に応じた任意好適な雰囲気中で気密封止して圧電振動子10を得ることができる。なお、Ag−Al合金膜13abに添加したAlの表面偏析は、上記導電性接着剤の熱硬化時や気密封止時に起きる。   The surface of the excitation electrode 13a is trimmed by ion beam or laser to the crystal piece 11 with the electrode housed and fixed in the container 15 as described above and adjusted to a predetermined frequency, and then the lid member 17 is placed on the container 15 Then, the piezoelectric vibrator 10 can be obtained by hermetically sealing in any suitable atmosphere according to the design of the piezoelectric vibrator such as a nitrogen atmosphere. The surface segregation of Al added to the Ag—Al alloy film 13ab occurs at the time of thermosetting or hermetic sealing of the conductive adhesive.

2.実験結果
2−1.オージェ分析
次に、上記手順にて比較例の圧電振動子としてAl添加量が0.5原子量%(以下、at.%と記す場合もある)のAg−Al合金膜を含む電極を具えたものと、実施例の圧電振動子としてAl添加量が8.0at.%であるAg−Al合金膜を含む電極を具えたものの、2種類の圧電振動子を製造し、それら振動子の電極表面をオージェ電子分析装置により組成分析した結果について説明する。なお、いずれの圧電振動子も、公称周波数が27MHzのものとした。
ここで、電極膜の成膜はスパッタ法で行い、密着層13aaとして5nmのCr膜を用い、Ag−Al合金膜13abは膜厚が250nmのものとした。また、オージェ分析は導電性接着剤硬化後(すなわち周波数調整前)、周波数調整後、気密封止後にそれぞれ実施した。この分析では、電極表面からAg,O(酸素),Alとシリコーン系導電性接着剤に起因したSi(シリコン)が主に検出された。
2. Experimental result
2-1. Auger analysis Next, an electrode including an Ag-Al alloy film having an Al addition amount of 0.5 atomic% (hereinafter also referred to as at.%) As a piezoelectric vibrator of a comparative example according to the above procedure is provided. As the piezoelectric vibrator of the example, the Al addition amount is 8.0 at. Although two types of piezoelectric vibrators are manufactured, the results of composition analysis of the electrode surfaces of these vibrators using an Auger electron analyzer will be described. All the piezoelectric vibrators had a nominal frequency of 27 MHz.
Here, the electrode film was formed by sputtering, a 5 nm Cr film was used as the adhesion layer 13aa, and the Ag—Al alloy film 13ab had a thickness of 250 nm. In addition, Auger analysis was performed after the conductive adhesive was cured (that is, before frequency adjustment), after frequency adjustment, and after hermetic sealing. In this analysis, Ag, O (oxygen), Al and Si (silicon) due to the silicone-based conductive adhesive were mainly detected from the electrode surface.

図2は、このオージェ分析の結果を示したもので、横軸に上記工程進捗、縦軸に上記分析での原子量の比(百分率)をとって示したものである。(A)図はこの発明の範囲のAl添加をしたもの(実施例)の分析結果、(B)図はこの発明の範囲外のAl添加のもの(比較例)の分析結果である。なお、上記オージェ分析時に得られた数値を下記の表1に示した。

Figure 2017108365
FIG. 2 shows the results of this Auger analysis, in which the horizontal axis represents the process progress and the vertical axis represents the atomic weight ratio (percentage) in the analysis. (A) The figure shows the analysis result of the Al addition within the range of the present invention (Example), and (B) shows the analysis result of the Al addition outside the scope of the present invention (Comparative Example). The numerical values obtained during the Auger analysis are shown in Table 1 below.
Figure 2017108365

図2、表1から分かるように、周波数調整前の状態では、Al添加量が0.5at.%(比較例)、及び8.0at.%(実施例)いずれの場合も、添加濃度以上のAlが電極表面から検出されており、接着剤硬化の熱によりAlが電極表面に偏析したことが分かる。また、周波数調整後の状態では、Al添加量が0.5at.%、及び8.0at.%いずれの場合も周波数調整前よりもAgの比率が大きくなっており、周波数調整前にできていた表面偏析層が除去されAgが表出したことが分かる。これに対し、気密封止後ではAl添加量が0.5at.%と8.0at.%とで組成に顕著な違いが現れており、気密封止前ではAl,Oは殆ど検出されておらずAgが表出したままの状態になっているのに対して、気密封止後ではAl,Oが調整前と同程度検出されAgが殆ど検出されなくなっている。この結果から周波数調整後(の封止工程時)に膜中に固溶しているAlが周波数調整面に再偏析したことが分かる。このAlの再偏析はAl添加量が1.0at.%以上の電極で確認された。本実施例では接着剤硬化時と気密封止時に保護層の形成を行ったが、本実施例と異なる接着固定方法、封止方式を採用する場合であって、これらの方法、方式では保護層が形成されない場合には、個別に250〜450℃の温度範囲の熱処理工程を設けることで保護層の形成を行う。   As can be seen from FIG. 2 and Table 1, the amount of Al added is 0.5 at. % (Comparative example), and 8.0 at. % (Example) In all cases, Al at an addition concentration or more was detected from the electrode surface, and it was found that Al was segregated on the electrode surface by the heat of curing the adhesive. In the state after frequency adjustment, the Al addition amount is 0.5 at. %, And 8.0 at. In any case, the ratio of Ag is larger than that before the frequency adjustment, and it can be seen that the surface segregation layer formed before the frequency adjustment is removed and Ag is exposed. On the other hand, the amount of Al added is 0.5 at. % And 8.0 at. %, A significant difference appears in the composition. Al and O are hardly detected before the hermetic sealing, and the Ag remains exposed, but after the hermetic sealing. Al and O are detected to the same extent as before adjustment, and Ag is hardly detected. From this result, it can be seen that Al dissolved in the film after frequency adjustment (during the sealing step) resegregated on the frequency adjustment surface. This resegregation of Al has an Al addition amount of 1.0 at. % Or more of the electrodes were confirmed. In this example, the protective layer was formed at the time of adhesive curing and hermetic sealing, but when an adhesive fixing method and a sealing method different from this example were adopted, the protective layer was used in these methods and methods. Is not formed, a protective layer is formed by providing a heat treatment step in a temperature range of 250 to 450 ° C. individually.

2−2.膜表面モフォロジー
次に、水晶基板上に成膜された本発明のAg−8.0at.%Al合金膜と従来の純Ag膜を、窒素雰囲気中で300℃ 30分間の熱処理を行った後、両者の表面状態(モフォロジー)を原子間力顕微鏡(AFM)により調べた結果について説明する。ここで、純Agも、Ag−8.0at.%Alと同様、5nmのCr密着層上に厚さ250nmでスパッタ法により成膜した。
2-2. Film Surface Morphology Next, Ag-8.0 at. Of the present invention formed on a quartz substrate. The results of examining the surface state (morphology) of a% Al alloy film and a conventional pure Ag film at 300 ° C. for 30 minutes in a nitrogen atmosphere and then examining the surface state (morphology) of the both by an atomic force microscope (AFM) will be described. Here, pure Ag is also Ag-8.0 at. As with% Al, a film was formed by sputtering on a 5 nm Cr adhesion layer with a thickness of 250 nm.

図3は、AFMによる観察画像を示したもので、(A)図はAg−8.0at.%Al合金膜(実施例)の成膜直後のAFM観察像、(B)図はAg−8.0at.%Al合金膜の300℃30分の熱処理後のAFM観察像、(C)図は純Ag膜(比較例)の成膜直後のAFM観察像、(D)図は純Ag膜の300℃30分の熱処理後のAFM観察像である。
図3から明らかなように、純Agでは、熱処理により表面の凹凸が大きくなり凝集が起こっているのに対し、Alの保護層を有するAg−8.0at.%Al膜では、表面の凹凸の大きさに変化はなく凝集が抑制されていることが分かる。
FIG. 3 shows an observation image by AFM, and FIG. 3 (A) shows Ag-8.0 at. An AFM observation image immediately after the film formation of the% Al alloy film (Example), (B) shows Ag-8.0 at. An AFM observation image of a% Al alloy film after heat treatment at 300 ° C. for 30 minutes, (C) shows an AFM observation image immediately after the deposition of a pure Ag film (comparative example), and (D) shows an AFM observation image of the pure Ag film at 300 ° C. It is an AFM observation image after the heat processing for 1 minute.
As is clear from FIG. 3, in pure Ag, the surface unevenness is increased due to heat treatment and aggregation occurs, whereas Ag-8.0 at. It can be seen that in the% Al film, the size of the surface irregularities is not changed and aggregation is suppressed.

2−3.周波数エージング
次に、実施例としてAg−8.0at.%Al電極を有したもの、及び、比較例として純Ag電極を有したもので、それぞれ公称周波数27MHzのATカット振動子を製造し、これらに85℃で高温アニールをした際の周波数変動(エージング特性)を調べた結果について説明する。なお、純Ag電極もAg−8at.%Al電極と同じく密着層は5nmのCr膜とした。
図4はそれらのエージング特性を示したもので、横軸に日数を、縦軸に試験開始時の周波数に対する各測定毎の周波数変化率(ppm)をとって、示したものである。(A)図は実施例の圧電振動子の特性、(B)図は比較例の圧電振動子の特性である。
実施例の水晶振動子は21日間経過時点(室温で1年間のエージングに相当)での周波数変動量は−1ppm未満であるのに対し、純Ag電極の水晶振動子の21日間経過時点の周波数変動量は最大で−3ppmであり、実施例の水晶振動子(本発明のAl添加Ag基合金を電極とした水晶振動子)のエージング特性が非常に良好であることが分かる。
2-3. Frequency Aging Next, as an example, Ag-8.0 at. The frequency fluctuations (aging) when an AT-cut vibrator having a nominal frequency of 27 MHz was manufactured and annealed at 85 ° C. at a high temperature, each having a% Al electrode and a pure Ag electrode as a comparative example. The results of examining the characteristics will be described. A pure Ag electrode is also Ag-8 at. Similar to the% Al electrode, the adhesion layer was a 5 nm Cr film.
FIG. 4 shows these aging characteristics, with the horizontal axis representing the number of days and the vertical axis representing the frequency change rate (ppm) for each measurement relative to the frequency at the start of the test. (A) shows the characteristics of the piezoelectric vibrator of the example, and (B) shows the characteristics of the piezoelectric vibrator of the comparative example.
The crystal resonator of the example has a frequency fluctuation amount of less than −1 ppm when 21 days have elapsed (corresponding to aging for one year at room temperature), whereas the frequency of the crystal resonator of pure Ag electrode when 21 days have elapsed. The fluctuation amount is -3 ppm at the maximum, and it can be seen that the aging characteristics of the crystal resonator of the example (the crystal resonator using the Al-added Ag-based alloy of the present invention as an electrode) are very good.

さらに、Al添加量を0〜15at.%の間で変えて製造したAg−Al合金電極ATカット振動子(27MHz)を85℃で21日間エージングした後の平均周波数変動量(各々サンプル数10個)を表2に示す。

Figure 2017108365

この表2から分かるように、保護層の修復が起きなかったAl添加量0.5at.%では21日間エージング後の平均周波数変動量は純Agと同じ−2ppm程度であった。一方、保護層の修復が起きたAl添加量1at.%以上では21日間エージング後の平均周波数変動量が−1ppm未満となった。ただし、Al添加量が10at.%を越えると、良好なエージング特性は得られるものの、電極表面が白濁する。白濁の度合いは、Alの添加量が増えるほどはっきりしてくる。この電極表面を走査型電子顕微鏡にて観察するとAlが粒状に析出している。電極表面にこのような粒が存在するような状態は信頼性上問題がある。したがって、Alの添加量の上限としては、エージング特性が改善でき、かつ、Alの粒状析出が生じない範囲が良く、10原子%以下に限定される。以上から、Al添加濃度としては1.0at.%から10at.%が好ましいといえる。 Further, the Al addition amount is 0 to 15 at. Table 2 shows the average frequency fluctuation amount (10 samples each) after aging an Ag-Al alloy electrode AT-cut vibrator (27 MHz) manufactured by changing between% and 21 days at 85 ° C.
Figure 2017108365

As can be seen from Table 2, the amount of Al added was 0.5 at. %, The average frequency fluctuation amount after aging for 21 days was about −2 ppm, which is the same as that of pure Ag. On the other hand, the amount of Al added is 1 at. In the case of% or more, the average frequency fluctuation amount after aging for 21 days was less than −1 ppm. However, the Al addition amount is 10 at. If it exceeds 50%, good aging characteristics can be obtained, but the electrode surface becomes cloudy. The degree of white turbidity becomes clear as the amount of Al added increases. When this electrode surface is observed with a scanning electron microscope, Al is precipitated in a granular form. A state in which such grains are present on the electrode surface is problematic in terms of reliability. Accordingly, the upper limit of the amount of Al added is preferably in a range where the aging characteristics can be improved and no granular precipitation of Al occurs, and is limited to 10 atomic% or less. From the above, the Al addition concentration is 1.0 at. % To 10 at. % Is preferable.

3. 封止工程の影響を考慮した実施形態
水晶振動子の封止は、水晶振動子の周波数調整の後に行われる。このような工程順であるため、この出願に係るAg−Al合金を電極とした水晶振動子の周波数調整に当たっては、以下の点に留意することが好ましい。
封止工程の封止装置内の環境は、微量の酸素を含むものである。例えば、ほぼ窒素雰囲気であるが微量の酸素を含むものであることが多い。また、封止温度も高温(例えば100〜300℃の間の所定の温度)であることが多い。従って、Ag−Al合金電極表面が周波数調整でのイオンミリングやレーザーミリングにより削られてAlが露出した場合は、このAlが封止工程の雰囲気中に存在する微量の酸素によって、酸化してしまい、封止後において、周波数調整工程時に調整した共振周波数からマイナス側にシフトしてしまうことが生じる。
3. Embodiment in which influence of sealing process is considered Sealing of the crystal unit is performed after frequency adjustment of the crystal unit. Since the process order is as described above, it is preferable to pay attention to the following points when adjusting the frequency of the crystal resonator using the Ag—Al alloy according to this application as an electrode.
The environment in the sealing device in the sealing step includes a trace amount of oxygen. For example, it is almost a nitrogen atmosphere but often contains a trace amount of oxygen. Also, the sealing temperature is often high (for example, a predetermined temperature between 100 and 300 ° C.). Therefore, when the surface of the Ag-Al alloy electrode is scraped by ion milling or laser milling with frequency adjustment and Al is exposed, the Al is oxidized by a small amount of oxygen present in the atmosphere of the sealing process. After sealing, the resonance frequency adjusted during the frequency adjustment process may shift to the minus side.

図5はこの周波数シフト現象と、Ag−Al合金電極中のAl添加量との関係を説明する図である。具体的には、公称周波数27MHzの水晶振動子であって、Alの添加量を0〜8.3原子量%まで7水準としたAg−Al合金電極を具えた水晶振動子をそれぞれ作製し、各振動子の気密封止後の共振周波数と周波数調整時の共振周波数との差と、Ag−Al合金電極膜のAlの添加量との関係を示した図である。横軸にAlの添加量(原子量%)をとり、縦軸に封止前後の周波数シフト量(ppm)をとって示してある。なお、いずれの水準の水晶振動子も、密着層として厚み5nmのクロム膜を具え、この密着層上に厚み250nmのAg−Al合金電極を具えたものである。また、各水準の水晶振動子の作製数はいずれも100個である。   FIG. 5 is a diagram for explaining the relationship between this frequency shift phenomenon and the amount of Al added to the Ag—Al alloy electrode. Specifically, each crystal resonator having a nominal frequency of 27 MHz and including an Ag—Al alloy electrode in which the Al addition amount is set to 7 levels from 0 to 8.3 atomic% is prepared. It is the figure which showed the relationship between the difference of the resonant frequency after the hermetic sealing of a vibrator | oscillator, and the resonant frequency at the time of frequency adjustment, and the addition amount of Al of an Ag-Al alloy electrode film. The horizontal axis represents the amount of Al added (atomic weight%), and the vertical axis represents the frequency shift amount (ppm) before and after sealing. Each level of the quartz crystal resonator includes a chromium film having a thickness of 5 nm as an adhesion layer, and an Ag—Al alloy electrode having a thickness of 250 nm on the adhesion layer. In addition, the number of crystal resonators manufactured at each level is 100.

この図5から分かるように、封止前後の周波数シフト量は、Alの添加量に応じて変化することが分かり、詳細には、Alの添加量が1〜4原子量%の水準では添加量に応じて急激に変化することが分かり、さらに、Alの添加量が5原子量%付近より多くなると90ppm程度で飽和状態になることが分かる。従って、Ag−Al合金電極を用いた水晶振動子の周波数調整を行う際は、封止工程で生じる周波数シフト量を考慮した(周波数シフト量を見込んだ)周波数調整設定値で周波数調整を行うのが良いことが分かる。
さらにこの図5から、Alの添加量が5原子量%以上であると周波数シフト量が飽和することから、周波数調整のし易さや水晶振動子の特性安定性を考えると、Alの添加量は5原子量%以上が良く、そして、上記の電極が白濁する点をも考慮すると、Alの添加量は5〜10原子量%が良いことが分かる。
実際、Alの添加量を6.0原子量%としたAg−Al合金電極を具えた周波数27.0MHzの水晶振動子100個各々の封止前後の周波数から周波数シフト量を算出したところ、周波数シフト量は90±3ppmの範囲であった。従って、この例からも、Alの添加量を5〜10原子量%としておくことで、周波数シフト量の再現性が良くなることが分かり、然も、周波数調整の際の設定値は、最終目標の周波数より90ppm高い値付近の値にするのが良いことが分かる。もちろん、この設定値は、一例でありAg−Al合金膜の組成や封止条件に応じて変化するので、予め周波数シフト量を把握して決める。
As can be seen from FIG. 5, it can be seen that the frequency shift amount before and after sealing changes according to the amount of Al added. Specifically, when the amount of Al added is 1 to 4 atomic%, It turns out that it changes abruptly according to this, and it turns out that it will be in a saturated state at about 90 ppm when the addition amount of Al becomes more than 5 atomic weight% vicinity. Therefore, when performing the frequency adjustment of the crystal resonator using the Ag-Al alloy electrode, the frequency adjustment is performed with the frequency adjustment set value in consideration of the frequency shift amount generated in the sealing process (considering the frequency shift amount). I understand that is good.
Further, from FIG. 5, since the frequency shift amount is saturated when the additive amount of Al is 5 atomic% or more, the additive amount of Al is 5 in view of ease of frequency adjustment and characteristic stability of the crystal resonator. In view of the fact that the atomic weight% or more is good and the above-mentioned electrode becomes clouded, it is understood that the added amount of Al is preferably 5 to 10 atomic weight%.
Actually, when the frequency shift amount was calculated from the frequency before and after the sealing of each of the 100 crystal resonators having the frequency of 27.0 MHz having the Ag-Al alloy electrode in which the additive amount of Al was 6.0 atomic%, the frequency shift was calculated. The amount was in the range of 90 ± 3 ppm. Therefore, it can be seen from this example that the reproducibility of the frequency shift amount is improved by setting the addition amount of Al to 5 to 10 atomic%, and the set value at the time of frequency adjustment is the final target. It can be seen that it is better to set the value around 90 ppm higher than the frequency. Of course, this set value is an example and varies depending on the composition of the Ag—Al alloy film and the sealing conditions, and is determined by grasping the frequency shift amount in advance.

また、上記のようにAlの添加量を6.0原子量%としたAg−Al合金電極を具えた周波数27.0MHzの水晶振動子10個について、85℃で高温アニールした際の周波数変動(エージング特性)を調べた結果を図6に示す。横軸に日数を、縦軸に試験開始時の周波数に対する各測定毎の周波数変化率(ppm)をとって、示したものである。21日経過後の平均周波数変動量は−0.74ppmで、サンプル数10個のばらつきは±0.13ppmと、非常に良好なエージング特性を示した。    In addition, as described above, the frequency fluctuation (aging) when 10 quartz crystal vibrators having a frequency of 27.0 MHz having an Ag—Al alloy electrode with an addition amount of Al of 6.0 atomic weight% are annealed at 85 ° C. The results of examining the characteristics are shown in FIG. The horizontal axis represents the number of days, and the vertical axis represents the frequency change rate (ppm) for each measurement with respect to the frequency at the start of the test. The average frequency fluctuation amount after 21 days was −0.74 ppm, and the variation of 10 samples was ± 0.13 ppm, indicating very good aging characteristics.

また、図7は上記の周波数シフト量がAl添加量で変動することの考察データに相当するものである。オージェ分析装置を用いて、Al添加量と封止後の電極膜表面のAl組成との関係を調査したものである。横軸にAg−Al合金電極膜のAlの添加量(原子量%)をとり、縦軸に気密封止後の電極表面のAlの組成比をとって示してある。この図7から分かるように、Ag−Al合金電極表面のAlの組成比は、Alの添加量が3原子量%近傍で急激に立ち上がった後、Alの添加量が5〜10原子量%の範囲にわたって一定(35%)となる。この傾向は図5に示したAlの添加量と周波数シフト量との傾向と相関を持つことが分かる。すなわち、電極表面のAl組成比が飽和するAl添加量の範囲は、周波数シフト量も飽和する領域に当たることが分かる。このことからも、周波数調整を考慮する場合は、Alの添加量は5〜10原子量%が良いことが分かる。    FIG. 7 corresponds to the consideration data that the frequency shift amount fluctuates with the Al addition amount. Using an Auger analyzer, the relationship between the amount of Al added and the Al composition on the surface of the electrode film after sealing was investigated. The horizontal axis represents the amount of Al added (atomic weight%) in the Ag—Al alloy electrode film, and the vertical axis represents the Al composition ratio on the electrode surface after hermetic sealing. As can be seen from FIG. 7, the composition ratio of Al on the surface of the Ag-Al alloy electrode is such that the Al addition amount rises rapidly in the vicinity of 3 atomic weight% and then the Al addition amount ranges from 5 to 10 atomic weight%. Constant (35%). It can be seen that this tendency correlates with the tendency between the Al addition amount and the frequency shift amount shown in FIG. That is, it can be seen that the range of the Al addition amount at which the Al composition ratio on the electrode surface is saturated corresponds to the region where the frequency shift amount is also saturated. This also shows that when the frequency adjustment is taken into consideration, the addition amount of Al is preferably 5 to 10 atomic%.

4.変形例
上述においては、この発明の圧電振動子及びその製造方法の実施形態を説明したが、これらの発明は上述の実施形態に限られない。例えば、上述の実施形態では、SMD型の水晶振動子に本発明を適用した例を示したが、例えば、金属キャップを用いたリードタイプの振動子であって銀電極を具える振動子に対しても適用できる。また、もちろん、水晶片の平面形状が丸形状(略丸形状)の水晶振動子にも適用できる。また、本発明の要旨を逸脱しない範囲において種々の変更が可能である。例えば、ATカット水晶振動子に限定されるものではなく、ATカット以外の水晶振動子や、タンタル酸リチウムやニオブ酸リチウムなど他の圧電材料を用いた振動子に対しても、本発明は適用できる。
4). In the above description, the embodiments of the piezoelectric vibrator and the manufacturing method thereof according to the present invention have been described. However, the present invention is not limited to the above-described embodiments. For example, in the above-described embodiment, an example in which the present invention is applied to an SMD type crystal resonator has been described. However, for example, for a resonator of a lead type using a metal cap and having a silver electrode. Even applicable. Of course, the present invention can also be applied to a crystal resonator in which the planar shape of the crystal piece is round (substantially round). Various modifications can be made without departing from the scope of the present invention. For example, the present invention is not limited to the AT-cut crystal unit, and the present invention is also applied to crystal units other than the AT-cut unit and resonators using other piezoelectric materials such as lithium tantalate and lithium niobate. it can.

10:実施形態の圧電振動子
11:圧電片(水晶片)
13:電極
13a:励振用電極
13aa:密着層
13ab:この発明のAg−Al合金膜
13b:端子電極
15:容器
15a:凹部
15b:支持パッド
15c:外部実装端子
17:蓋部材
19:導電性接着剤
10: Piezoelectric vibrator of embodiment 11: Piezoelectric piece (crystal piece)
13: Electrode 13a: Excitation electrode 13aa: Adhesion layer 13ab: Ag-Al alloy film of this invention 13b: Terminal electrode 15: Container 15a: Recess 15b: Support pad 15c: External mounting terminal 17: Lid member 19: Conductive adhesion Agent

Claims (13)

銀を主成分とする励振用電極を具える圧電振動子において、前記励振用電極はアルミニウムを1〜15原子量%含むものであることを特徴とする圧電振動子。   A piezoelectric vibrator comprising an excitation electrode mainly composed of silver, wherein the excitation electrode contains 1 to 15 atomic% of aluminum. 銀を主成分とする励振用電極を具える圧電振動子において、前記励振用電極はアルミニウムを1〜10原子量%含むものであることを特徴とする圧電振動子。   A piezoelectric vibrator comprising an excitation electrode mainly composed of silver, wherein the excitation electrode contains 1 to 10 atomic weight% of aluminum. 銀を主成分とする励振用電極を具える圧電振動子において、前記励振用電極はアルミニウムを5〜10原子量%含むものであることを特徴とする圧電振動子。   A piezoelectric vibrator comprising an excitation electrode mainly composed of silver, wherein the excitation electrode contains 5 to 10 atomic weight% of aluminum. 圧電片と、該圧電片の表裏面に設けられた密着層及び該密着層上に設けられアルミニウムを1〜15原子量%含み銀を主成分とする薄膜の積層膜から成る励振用電極と、を具えたことを特徴とする圧電振動片。   A piezoelectric piece, an adhesion layer provided on the front and back surfaces of the piezoelectric piece, and an excitation electrode comprising a laminated film of a thin film containing 1 to 15 atomic percent of aluminum and containing silver as a main component, provided on the adhesion layer. A piezoelectric vibrating piece characterized by comprising. 圧電片と、該圧電片の表裏面に設けられた密着層及び該密着層上に設けられアルミニウムを1〜10原子量%含み銀を主成分とする薄膜の積層膜から成る励振用電極と、を具えたことを特徴とする圧電振動片。   A piezoelectric piece, an adhesion layer provided on the front and back surfaces of the piezoelectric piece, and an excitation electrode comprising a laminated film of a thin film mainly containing silver and containing 1 to 10 atomic% of aluminum provided on the adhesion layer. A piezoelectric vibrating piece characterized by comprising. 圧電片と、該圧電片の表裏面に設けられた密着層及び該密着層上に設けられアルミニウムを5〜10原子量%含み銀を主成分とする薄膜の積層膜から成る励振用電極と、を具えたことを特徴とする圧電振動片。   A piezoelectric piece, an adhesion layer provided on the front and back surfaces of the piezoelectric piece, and an excitation electrode comprising a thin film laminated on the adhesion layer and containing 5 to 10 atomic% of aluminum and containing silver as a main component. A piezoelectric vibrating piece characterized by comprising. アルミニウムを含み銀を主成分とする励振用電極を圧電片上に形成する工程を含む圧電振動子の製造方法において、
前記励振用電極のための当該薄膜を成膜した後に、該構造体に250〜450℃の熱処理を施す工程を含むことを特徴とする圧電振動子の製造方法。
In a method for manufacturing a piezoelectric vibrator including a step of forming an excitation electrode mainly containing silver and containing aluminum on a piezoelectric piece,
A method of manufacturing a piezoelectric vibrator, comprising: forming a thin film for the excitation electrode, and then subjecting the structure to a heat treatment at 250 to 450 ° C.
アルミニウムを1〜15原子量%含み銀を主成分とする励振用電極を圧電片上に形成する工程を含む圧電振動子の製造方法において、
前記励振用電極のための当該薄膜を成膜した後に、該構造体に250〜450℃の熱処理を施す工程を含むことを特徴とする圧電振動子の製造方法。
In a method for manufacturing a piezoelectric vibrator including a step of forming an excitation electrode mainly containing silver in an amount of 1 to 15 atomic weight aluminum on a piezoelectric piece,
A method of manufacturing a piezoelectric vibrator, comprising: forming a thin film for the excitation electrode, and then subjecting the structure to a heat treatment at 250 to 450 ° C.
アルミニウムを1〜10原子量%含み銀を主成分とする励振用電極を圧電片上に形成する工程を含む圧電振動子の製造方法において、
前記励振用電極のための当該薄膜を成膜した後に、該構造体に250〜450℃の熱処理を施す工程を含むことを特徴とする圧電振動子の製造方法。
In a method of manufacturing a piezoelectric vibrator including a step of forming an excitation electrode mainly containing silver in an amount of 1 to 10 atomic weight aluminum on a piezoelectric piece,
A method of manufacturing a piezoelectric vibrator, comprising: forming a thin film for the excitation electrode, and then subjecting the structure to a heat treatment at 250 to 450 ° C.
アルミニウムを5〜10原子量%含み銀を主成分とする励振用電極を圧電片上に形成する工程を含む圧電振動子の製造方法において、
前記励振用電極のための当該薄膜を成膜した後に、該構造体に250〜450℃の熱処理を施す工程を含むことを特徴とする圧電振動子の製造方法。
In a method of manufacturing a piezoelectric vibrator including a step of forming an excitation electrode mainly containing silver in an amount of 5 to 10 atomic weight aluminum on a piezoelectric piece,
A method of manufacturing a piezoelectric vibrator, comprising: forming a thin film for the excitation electrode, and then subjecting the structure to a heat treatment at 250 to 450 ° C.
請求項7〜10のいずれか1項に記載の圧電振動子の製造方法において、
前記熱処理は、当該圧電振動子の励振用電極表面を一部除去して当該圧電振動子の周波数調整を行う工程の後であって、当該圧電振動子を気密封止する工程の前に行うことを特徴とする圧電振動子の製造方法。
In the manufacturing method of the piezoelectric vibrator according to any one of claims 7 to 10,
The heat treatment is performed after the step of removing a part of the excitation electrode surface of the piezoelectric vibrator and adjusting the frequency of the piezoelectric vibrator and before the step of hermetically sealing the piezoelectric vibrator. A method for manufacturing a piezoelectric vibrator characterized by the above.
アルミニウムを含み銀を主成分とする励振用電極を圧電片の表裏に形成する工程と、前記励振用電極を形成した圧電片に周波数調整を行う工程と、前記周波数調整が済んだ圧電片を封止する工程と、を含む圧電振動子の製造方法において、前記周波数調整は、前記封止工程で生じる周波数シフト量を考慮して行うことを特徴とする圧電振動子の製造方法。   A step of forming an excitation electrode containing aluminum and silver as a main component on the front and back of the piezoelectric piece; a step of adjusting the frequency of the piezoelectric piece on which the excitation electrode is formed; and a step of sealing the piezoelectric piece after the frequency adjustment. A method of manufacturing a piezoelectric vibrator, wherein the frequency adjustment is performed in consideration of a frequency shift amount generated in the sealing process. 請求項12に記載の圧電振動子の製造方法において、前記励振用電極はアルミニウムを5〜10原子量%含むものであることを特徴とする圧電振動子の製造方法。










































13. The method for manufacturing a piezoelectric vibrator according to claim 12, wherein the excitation electrode contains 5 to 10 atomic% of aluminum.










































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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7645155B2 (en) 2021-09-09 2025-03-13 京セラ株式会社 Method and apparatus for adjusting frequency of crystal device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63316912A (en) * 1987-06-19 1988-12-26 Nippon Dempa Kogyo Co Ltd Piezoelectric vibrator
JP2004002929A (en) * 2001-08-03 2004-01-08 Furuya Kinzoku:Kk Silver alloys, sputtering targets, reflectors for reflective LCDs, reflective wiring electrodes, thin films, their manufacturing methods, optical recording media, electromagnetic wave shields, metal materials for electronic components, wiring materials, electronic components, electronic devices, metal film processing Method, electro-optical component, laminate and building material glass
JP2007335938A (en) * 2006-06-12 2007-12-27 Epson Toyocom Corp Method for manufacturing piezoelectric vibrator
WO2014098013A1 (en) * 2012-12-18 2014-06-26 コニカミノルタ株式会社 Transparent electrode for touch panel, touch panel, and display device
JP2014192644A (en) * 2013-03-27 2014-10-06 Nippon Dempa Kogyo Co Ltd Piezoelectric device and process of manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63316912A (en) * 1987-06-19 1988-12-26 Nippon Dempa Kogyo Co Ltd Piezoelectric vibrator
JP2004002929A (en) * 2001-08-03 2004-01-08 Furuya Kinzoku:Kk Silver alloys, sputtering targets, reflectors for reflective LCDs, reflective wiring electrodes, thin films, their manufacturing methods, optical recording media, electromagnetic wave shields, metal materials for electronic components, wiring materials, electronic components, electronic devices, metal film processing Method, electro-optical component, laminate and building material glass
JP2007335938A (en) * 2006-06-12 2007-12-27 Epson Toyocom Corp Method for manufacturing piezoelectric vibrator
WO2014098013A1 (en) * 2012-12-18 2014-06-26 コニカミノルタ株式会社 Transparent electrode for touch panel, touch panel, and display device
JP2014192644A (en) * 2013-03-27 2014-10-06 Nippon Dempa Kogyo Co Ltd Piezoelectric device and process of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7645155B2 (en) 2021-09-09 2025-03-13 京セラ株式会社 Method and apparatus for adjusting frequency of crystal device

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