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JP2017199888A - Semiconductor device manufacturing method and semiconductor device - Google Patents

Semiconductor device manufacturing method and semiconductor device Download PDF

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JP2017199888A
JP2017199888A JP2016092184A JP2016092184A JP2017199888A JP 2017199888 A JP2017199888 A JP 2017199888A JP 2016092184 A JP2016092184 A JP 2016092184A JP 2016092184 A JP2016092184 A JP 2016092184A JP 2017199888 A JP2017199888 A JP 2017199888A
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lead
resin
cutting
mold
semiconductor device
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JP6663294B2 (en
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緒方 敏洋
Toshihiro Ogata
敏洋 緒方
康平 白倉
Kohei Shirokura
康平 白倉
敏史 寺崎
Satoshi Terasaki
敏史 寺崎
田中 健司
Kenji Tanaka
健司 田中
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New Japan Radio Co Ltd
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New Japan Radio Co Ltd
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    • H10W72/0198
    • H10W74/00
    • H10W90/756

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Abstract

【課題】リード連結部の切断時に発生する樹脂部の欠けを抑制し、品質の向上を図ることができるようにする。【解決手段】チップ単位のチップ実装領域が複数連結された集合リードフレーム1を用い、この集合リードフレーム1に半導体チップ3を搭載すると共に、これら半導体チップ3をリード7aに電気的に接続する工程、上記半導体チップ3及びリード7aをチップ実装領域毎に封止し、各リード7aの一部が端子として端部に露出かつ突出し、それぞれのチップ実装領域との間がリード連結部7で連結された複数のモールド中間体を形成する工程と、各モールド中間体間のリード連結部7の例えば上面に加工溝8を形成する工程、各モールド中間体間のリード連結部7を加工溝8が形成されていない面から切断して個々の半導体装置を切り出す工程を含む。【選択図】図1PROBLEM TO BE SOLVED: To suppress the chipping of a resin part which occurs when cutting a lead connecting part and to improve the quality. A step of using a collective lead frame 1 in which a plurality of chip mounting areas for each chip are connected, mounting a semiconductor chip 3 on the collective lead frame 1, and electrically connecting these semiconductor chips 3 to leads 7a. The semiconductor chip 3 and the leads 7a are sealed in each chip mounting region, a part of each lead 7a is exposed and protrudes at an end as a terminal, and each chip mounting region is connected by a lead connecting portion 7. A step of forming a plurality of mold intermediates, a step of forming a processed groove 8 on, for example, the upper surface of the lead connecting portion 7 between the mold intermediates, and a processed groove 8 forming the lead connecting portion 7 between the mold intermediates. It includes a step of cutting out individual semiconductor devices by cutting from a surface which is not formed. [Selection diagram] Fig. 1

Description

本発明は半導体装置の製造方法及び半導体装置、特に樹脂パッケージの底面等から端子が露出する半導体装置の製造方法及び半導体装置に関する。   The present invention relates to a semiconductor device manufacturing method and a semiconductor device, and more particularly to a semiconductor device manufacturing method and a semiconductor device in which terminals are exposed from the bottom surface of a resin package.

近年、携帯電話、スマホ、タブレット等の通信機器等の小型化だけでなく、センサ搭載数の増加等で車載電子機器の小型化も進められており、特に車載電子機器では、高い実装信頼性を維持しながら、所定空間に搭載できる部品を作る必要があり、このために、ショートリードを具備した半導体装置が使用される。   In recent years, not only miniaturization of communication devices such as mobile phones, smartphones, tablets, etc., but also miniaturization of in-vehicle electronic devices has been promoted due to an increase in the number of sensors mounted. In particular, in-vehicle electronic devices have high mounting reliability. It is necessary to make a component that can be mounted in a predetermined space while maintaining it, and for this purpose, a semiconductor device having a short lead is used.

この種の半導体装置においては、実装する際の容易性、信頼性を担保するために、リードと封止樹脂との間にスタンドオフを持たせており、このスタンドオフの形成には、封止シートが用いられる。この封止シートは、半導体チップが搭載された状態のリードフレームの少なくともリードの底面に密着し、かつ各リード間に流入する封止樹脂部分では僅かに樹脂側へ入り込むことで、このリード等の底面に封止樹脂が回り込まないように保護すると共に、リードの底面と封止樹脂(封止体)との間に所望の高さのスタンドオフを形成する。   In this type of semiconductor device, a standoff is provided between the lead and the sealing resin in order to ensure ease of mounting and reliability. A sheet is used. This sealing sheet is in close contact with at least the bottom surface of the lead of the lead frame on which the semiconductor chip is mounted, and slightly enters the resin side at the sealing resin portion flowing between the leads. In addition to protecting the sealing resin from entering the bottom surface, a stand-off having a desired height is formed between the bottom surface of the lead and the sealing resin (sealing body).

図4及び図5に、従来の半導体装置の1例が示されており、これらの図において、符号の1はリードフレーム(ダイパット)、2はリード、3は半導体チップ、4は半導体チップ3とリード2を接続するボンディングワイヤ、5は封止樹脂である。この半導体装置は、ショートリードを具備した半導体装置であり、図5に示されるように、各リード2の一部が封止体の両側の端部(周縁部)に露出して配置され、これらがスタンドオフを持つ外部端子となる。   4 and 5 show an example of a conventional semiconductor device. In these drawings, reference numeral 1 denotes a lead frame (die pad), 2 denotes a lead, 3 denotes a semiconductor chip, and 4 denotes a semiconductor chip 3. Bonding wires 5 for connecting the leads 2 are sealing resins. This semiconductor device is a semiconductor device having a short lead, and as shown in FIG. 5, a part of each lead 2 is disposed so as to be exposed at both end portions (peripheral portions) of the sealing body. Becomes an external terminal with a standoff.

即ち、上記半導体装置の製造においては、半導体チップ3がリードフレーム1に搭載され、リード2と半導体チップ3をワイヤ4で接続し、複数のリード2のそれぞれの裏面と樹脂成形金型の下金型面に載置した封止用シートとを密着させた状態として樹脂封止が行われる。これにより、各リード2の裏面に封止用樹脂が付着するのを防ぐことができる。また、封止用樹脂の注入時に、各リード2を封止用シートにめり込ませておくことにより、樹脂封止後に、封止体の裏面から各リード2が僅かに突出した状態となるスタンドオフが確保される。   That is, in the manufacture of the semiconductor device, the semiconductor chip 3 is mounted on the lead frame 1, the lead 2 and the semiconductor chip 3 are connected by the wire 4, the back surface of each of the plurality of leads 2, and the lower mold of the resin molding die. Resin sealing is performed with the sealing sheet placed on the mold surface in close contact. Thereby, it is possible to prevent the sealing resin from adhering to the back surface of each lead 2. Moreover, by injecting each lead 2 into the sealing sheet when the sealing resin is injected, each lead 2 slightly protrudes from the back surface of the sealing body after resin sealing. Standoff is secured.

更に、この樹脂封止時には、樹脂成形金型の上金型面に離形用シートを配置することも行われており、この離形用シートは、封止用シートと同様、各リード2の表面に封止用樹脂が付着することを防ぐことができる。また、封止用樹脂の注入時に各リード2を離形用シートにめり込ませておくことにより、樹脂封止後に封止体の表面から各リード2が僅かに突出した状態となる。   Furthermore, at the time of this resin sealing, a release sheet is also arranged on the upper mold surface of the resin molding die, and this release sheet is similar to the sealing sheet. It is possible to prevent the sealing resin from adhering to the surface. Further, by inserting each lead 2 into the release sheet when the sealing resin is injected, each lead 2 slightly protrudes from the surface of the sealing body after resin sealing.

また、半導体装置の製造は、上記各リード2を含むリードフレーム1が複数、連結・配置された集合リードフレームを用いて行われ、複数の半導体チップ3を搭載しそれぞれを樹脂封止した後の集合体を切断金型に配置し、半導体装置単位の各封止体の間のリード連結部(リード2が繋がる部分)や吊りリード(連結部)を切断パンチで切断することにより、図4,図5で示した個々の半導体装置(パッケージ)が製作される。   Further, the semiconductor device is manufactured using a collective lead frame in which a plurality of lead frames 1 including the above leads 2 are connected and arranged, and after a plurality of semiconductor chips 3 are mounted and sealed with resin. The assembly is placed in a cutting die, and lead connecting portions (portions where the leads 2 are connected) and suspension leads (connecting portions) between the respective sealing bodies of the semiconductor device unit are cut with a cutting punch, so that FIG. The individual semiconductor devices (packages) shown in FIG. 5 are manufactured.

特開2001−127090号公報JP 2001-127090 A 特開2002−026223号公報JP 2002-026223 A 特開2014−112714号公報JP 2014-112714 A 特開平06−151681号公報Japanese Patent Laid-Open No. 06-151681

しかしながら、従来の半導体装置の製造では、図5に示されるように、封止体において、各リード2の間、又はリード2の側面に充填される樹脂部の表面(上面)等に欠け6が生じるという問題があった。
即ち、樹脂封止の際には、上述したように、離形用シートや封止シートが用いられることから、樹脂成形状態がばらつき、例えば図5のように、僅かな凹部(段差)d等ができ、この樹脂凹部が切断金型の受け部で良好に支持されないことで、樹脂部の欠け6が発生する。この樹脂部の欠け6は、リード切断方向に関わらず発生する。
電気的接続の端子として機能する各リード2間の樹脂部欠け6は、半導体装置の信頼性を低下させる。
However, in the manufacture of the conventional semiconductor device, as shown in FIG. 5, in the sealing body, the chip 6 is not formed between the leads 2 or the surface (upper surface) of the resin portion filled in the side surface of the lead 2. There was a problem that occurred.
That is, as described above, since the release sheet or the sealing sheet is used for resin sealing, the resin molding state varies. For example, as shown in FIG. The resin recess is not favorably supported by the receiving part of the cutting die, and the resin part chipping 6 occurs. This chip 6 in the resin portion occurs regardless of the lead cutting direction.
Resin portion chipping 6 between each lead 2 that functions as a terminal for electrical connection reduces the reliability of the semiconductor device.

本発明は上記問題点に鑑みてなされたものであり、その目的は、リード連結部の切断時に発生する樹脂部の欠けを抑制し、品質の向上を図ることができる半導体装置の製造方法及び半導体装置を提供することにある。   The present invention has been made in view of the above-described problems, and a purpose thereof is to suppress a chipping of a resin portion that occurs at the time of cutting a lead connecting portion, and to improve a quality of a semiconductor device manufacturing method and a semiconductor To provide an apparatus.

上記目的を達成するために、請求項1の発明に係る半導体装置の製造方法は、チップ単位のチップ実装領域が複数連結された集合リードフレームを用い、この集合リードフレームの複数の上記チップ実装領域の所定部位に半導体チップを搭載すると共に、これら半導体チップをリードに電気的に接続するチップ実装工程と、上記半導体チップ及びリードをチップ実装領域毎に封止し、このリードの一部が端部に露出し、それぞれのチップ実装領域との間がリード連結部で連結される複数のモールド中間体を形成する中間体形成工程と、上記モールド中間体間のリード連結部の切断方向の反対の面に加工溝を形成する溝形成工程と、上記モールド中間体間のリード連結部を上記加工溝が形成されていない面から切断して個々の半導体装置を切り出す切断工程と、を含んでなることを特徴とする。
請求項2の発明に係る半導体装置の製造方法は、上記集合リードフレームのリード連結部の加工溝は、回転ブレードによって形成し、上記各モールド中間体間のリード連結部の切断は、打ち抜き金型を用いた切断パンチにて行うことを特徴とする。
In order to achieve the above object, a method of manufacturing a semiconductor device according to the invention of claim 1 uses a collective lead frame in which a plurality of chip mounting areas in a chip unit are connected, and a plurality of the chip mounting areas of the collective lead frame. A semiconductor chip is mounted at a predetermined portion of the chip, and a chip mounting step for electrically connecting the semiconductor chip to the lead, and the semiconductor chip and the lead are sealed for each chip mounting region, and a part of the lead is an end portion. An intermediate body forming step for forming a plurality of mold intermediate bodies that are exposed to each other and connected to each chip mounting region by lead connecting portions, and a surface opposite to the cutting direction of the lead connecting portions between the mold intermediate bodies A groove forming step for forming a processed groove on the surface and a lead connecting portion between the mold intermediate bodies are cut from a surface where the processed groove is not formed to cut individual semiconductor devices. And be cutting step, characterized in that it comprises a.
According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein the processing groove of the lead connecting portion of the collective lead frame is formed by a rotating blade, and the cutting of the lead connecting portion between the mold intermediates is performed by a punching die. It is characterized by performing with a cutting punch using.

請求項3の発明に係る半導体装置は、複数のリードを含むリードフレームと、このリードフレームに実装された半導体チップと、上記リードの一部を端子として端部から突出かつ露出させると共に、この端子間を樹脂で埋める状態として、上記半導体チップを樹脂封止してなる樹脂封止体と、上記端子及びこの端子間の樹脂からなり、上記樹脂封止体の端部から突出かつ露出する突出部であって、その上下面のいずれか一方の端部に上記端子の延出方向に直交する方向に延出する段差が形成された端子部と、を含んでなることを特徴とする。   According to a third aspect of the present invention, there is provided a semiconductor device comprising: a lead frame including a plurality of leads; a semiconductor chip mounted on the lead frame; and a part of the lead protruding and exposed from an end portion as a terminal. A resin encapsulant formed by resin-sealing the semiconductor chip as a state in which the space is filled with resin, and a projecting portion that is composed of the terminal and a resin between the terminals, and projects and is exposed from an end of the resin encapsulated body. And the terminal part by which the level | step difference extended in the direction orthogonal to the extension direction of the said terminal was formed in the any one edge part of the upper and lower surfaces is characterized by the above-mentioned.

上記の構成によれば、集合リードフレームに設けられた各チップ実装領域の所定部位に半導体チップを搭載し、半導体チップをリードに電気的に接続し、更にこの半導体チップ及びリードをチップ実装領域毎に封止することで、各リードの一部が端子として封止体の端部(例えば底面及び側面)に露出し、それぞれのチップ実装領域との間がリード連結部で連結される複数のモールド中間体が形成される。そして、この複数のモールド中間体間のリード連結部(リードが繋がる部分)の切断方向反対の面に、樹脂部の欠けを防止するための加工溝を形成し、このモールド中間体間のリード連結部を加工溝が形成されていない面から切断すれば、個々の半導体装置を製作することができる。
また、得られた半導体装置としての樹脂封止体には、その端部から端子部(リードの一部から構成された部分)が突出かつ露出し、この端子部の上下面のいずれか一方に段差が形成される。
According to the above configuration, the semiconductor chip is mounted on a predetermined portion of each chip mounting region provided in the collective lead frame, the semiconductor chip is electrically connected to the lead, and the semiconductor chip and the lead are further connected to each chip mounting region. As a result, a part of each lead is exposed as a terminal at the end (for example, bottom surface and side surface) of the sealing body, and a plurality of molds are connected to each chip mounting region by a lead connecting portion. An intermediate is formed. Then, a processed groove for preventing chipping of the resin portion is formed on the surface opposite to the cutting direction of the lead connecting portion (portion where the leads are connected) between the plurality of mold intermediates, and the lead connecting between the mold intermediates Individual semiconductor devices can be manufactured by cutting the part from the surface where the processing groove is not formed.
Moreover, in the resin sealing body as the obtained semiconductor device, a terminal portion (a portion constituted by a part of the lead) protrudes and is exposed from an end portion thereof, and is formed on either the upper or lower surface of the terminal portion. A step is formed.

本発明の半導体装置の製造方法によれば、リード連結部の切断時に発生する樹脂部の欠けを抑制し、半導体装置の品質の向上を図ることが可能となる。
また、本発明の半導体装置によれば、封止体の側面の底面側から端子部が突出するように構成されているため、突出した端子部が実装基板の変形に追従することによって、高い信頼性を達成することができるという効果がある。
According to the method for manufacturing a semiconductor device of the present invention, it is possible to suppress chipping of the resin portion that occurs when the lead connecting portion is cut, and to improve the quality of the semiconductor device.
Further, according to the semiconductor device of the present invention, since the terminal portion is configured to protrude from the bottom surface side of the side surface of the sealing body, the protruding terminal portion follows the deformation of the mounting substrate, thereby providing high reliability. There is an effect that sex can be achieved.

本発明に係る実施例の半導体装置の製造においてモールド中間体間のリード連結部の切断工程を示す断面図(リードフレームのみハッチング)である。It is sectional drawing (only a lead frame is hatching) which shows the cutting process of the lead connection part between mold intermediate bodies in manufacture of the semiconductor device of the Example which concerns on this invention. 実施例の半導体装置の構成を示す断面図(リードフレームのみハッチング)である。It is sectional drawing (only a lead frame is hatched) which shows the structure of the semiconductor device of Example. 実施例の半導体装置の外観斜視図である。It is an external appearance perspective view of the semiconductor device of an Example. 従来の半導体装置の構成を示す断面図(リードフレームのみハッチング)である。It is sectional drawing (only a lead frame is hatched) which shows the structure of the conventional semiconductor device. 従来の半導体装置の外観斜視図である。It is an external appearance perspective view of the conventional semiconductor device.

図1(A),(B)に、実施例の半導体装置の製造方法におけるリード連結部の切断の様子が示され、図2及び図3に、製造後の半導体装置の構成が示されている。各図において、符号の1はリードフレーム(ダイパッド)、3半導体チップ、4はボンディングワイヤ、5は封止樹脂、7はリードフレーム1の一部からなるリード連結部、7aは各リード、8は加工溝、9は端子部、5aはこの端子部9の樹脂、9Dは段差、12は打ち抜き金型、13は切断パンチである。
半導体装置の製造では、チップ単位のチップ実装領域が複数、連結・配列された集合リードフレーム1が用いられ、この集合リードフレーム1では、複数のリード7aを規則的に配列したリード連結部7がチップ実装領域間において繋がる状態で配置されている。
FIGS. 1A and 1B show a state of cutting the lead connecting portion in the semiconductor device manufacturing method of the embodiment, and FIGS. 2 and 3 show the configuration of the semiconductor device after manufacturing. . In each of the drawings, reference numeral 1 is a lead frame (die pad), 3 semiconductor chip, 4 is a bonding wire, 5 is a sealing resin, 7 is a lead connecting portion comprising a part of the lead frame 1, 7a is each lead, and 8 is A processing groove, 9 is a terminal portion, 5a is a resin of the terminal portion 9, 9D is a step, 12 is a punching die, and 13 is a cutting punch.
In the manufacture of a semiconductor device, a collective lead frame 1 in which a plurality of chip mounting areas for each chip are connected and arranged is used. In this collective lead frame 1, a lead connecting portion 7 in which a plurality of leads 7a are regularly arranged is used. They are arranged in a connected state between chip mounting areas.

半導体装置の製造は、リード7aを有するリードフレーム1にチップ実装領域毎に半導体チップ3を実装するチップ実装工程、上記各リード7aの一部が端子部9となるようにモールド中間体を形成する中間体形成工程、各モールド中間体間のリード連結部7の上下のいずれか一方の面に加工溝8を形成する溝形成工程、複数のモールド中間体間(それぞれの間)のリード連結部7を加工溝8が形成されていない面から切断する切断工程を有する。   In the manufacture of the semiconductor device, a chip mounting step of mounting the semiconductor chip 3 in each chip mounting region on the lead frame 1 having the leads 7a, and a mold intermediate is formed so that a part of each lead 7a becomes the terminal portion 9. Intermediate forming step, groove forming step of forming processed groove 8 on either one of the upper and lower surfaces of lead connecting portion 7 between the mold intermediates, lead connecting portion 7 between a plurality of mold intermediates (between each) A cutting step of cutting from a surface where the processing groove 8 is not formed.

例えば、上記チップ実装工程では、チップ実装を行う半導体製造装置のステージ上に、チップ搭載部(ダイパッド)、このチップ搭載部の周囲に配置されたリード連結部7及びチップ搭載部を接続する吊りリードを有するリードフレーム1が配置される。上記のチップ搭載部及び吊りリードは、必要に応じてハーフエッチング加工を施すこともできる。そして、このリードフレーム1のチップ搭載部に、半導体チップ3の裏面が接続されると共に、この半導体チップ3の表面の電極パッドと各リード7aとが導電性のボンディングワイヤ4により接続される。   For example, in the chip mounting process, a chip mounting portion (die pad), a lead connecting portion 7 arranged around the chip mounting portion, and a suspension lead connecting the chip mounting portion on a stage of a semiconductor manufacturing apparatus that performs chip mounting. The lead frame 1 having The chip mounting portion and the suspension lead can be half-etched as necessary. Then, the back surface of the semiconductor chip 3 is connected to the chip mounting portion of the lead frame 1, and the electrode pads on the surface of the semiconductor chip 3 and the leads 7 a are connected by the conductive bonding wires 4.

上記中間体形成工程では、上型と下型からなり、この上型と下型との間に形成されたキャビティ内に樹脂を注入するためのゲート部を有する樹脂成形金型を準備し、この樹脂成形金型の下型上に封止用シート、上型の内面に離型用シートを介してリードフレーム1を挟持する。そして、ゲート部からキャビティ内へ封止用樹脂を注入することにより、上記半導体チップ3、リード7a、上記チップ搭載部の一部を封止した封止(モールド)体、即ちモールド中間体を形成する。このモールド中間体では、図2のように、最終的な端子部9となるリード7aが封止体の両側面の底面側から水平方向に突出かつ露出しており、このリード7aは、図3にも示されるように、樹脂5a間に挟まれた(各リード7a間に樹脂5aが挟まれた)ものとなる。   In the intermediate forming step, a resin molding die having a gate part for injecting resin into a cavity formed between the upper mold and the lower mold and having an upper mold and a lower mold is prepared. The lead frame 1 is sandwiched between the sealing sheet on the lower mold of the resin mold and the release sheet on the inner surface of the upper mold. Then, by injecting a sealing resin from the gate portion into the cavity, a sealing (mold) body in which a part of the semiconductor chip 3, the lead 7a, and the chip mounting portion is sealed, that is, a mold intermediate is formed. To do. In this mold intermediate body, as shown in FIG. 2, the lead 7a which will be the final terminal portion 9 protrudes and is exposed in the horizontal direction from the bottom surface side of both side surfaces of the sealing body. As also shown, the resin 5a is sandwiched (the resin 5a is sandwiched between the leads 7a).

上記溝形成工程では、リードフレーム1の半導体チップ3を搭載した側の面を上とすると、モールド中間体間のリード連結部7の上面に、厚み方向の加工溝8を回転ブレード等で加工する。図1に示されるように、実施例の加工溝8は、切断パンチ13の両端の位置に合わせて2箇所形成される。この加工溝8は、各種の形状とすることができ、例えば切断パンチ13の幅の大きさの1箇所の溝としてもよい。   In the groove forming step, when the surface of the lead frame 1 on which the semiconductor chip 3 is mounted is up, the processing groove 8 in the thickness direction is processed with a rotary blade or the like on the upper surface of the lead connecting portion 7 between the mold intermediates. . As shown in FIG. 1, the processing grooves 8 of the embodiment are formed at two locations in accordance with the positions of both ends of the cutting punch 13. The processed groove 8 can have various shapes, for example, a single groove having the width of the cutting punch 13.

上記切断工程では、図1(A)に示されるように、打ち抜き金型12の所定位置に、上記溝形成工程後のモールド集合体を配置し、モールド中間体(封止体)のそれぞれの間のリード連結部7に加工溝8が設けられていない方向から切断(抜き打ち)パンチ13を進入させ、複数のリード7aが配列されたリード連結部7を切断することにより、半導体装置(パッケージ)が個片化される。   In the cutting step, as shown in FIG. 1 (A), the mold assembly after the groove forming step is disposed at a predetermined position of the punching die 12, and between the mold intermediate bodies (sealing bodies). By cutting (punching) punch 13 from the direction in which machining groove 8 is not provided in lead connecting portion 7 of this, and cutting lead connecting portion 7 in which a plurality of leads 7a are arranged, a semiconductor device (package) is obtained. It is divided into pieces.

上記の加工溝8は、切断パンチ13からモールド中間体のリード連結部7に加わる負荷を低減させ、従来のような樹脂部の欠け(6)の発生を抑制することができ、打ち抜き品質、ひいては半導体装置の品質を向上させるという利点がある。また、樹脂部の欠けが発生する場合でも、図1(B)の矢示30で示されるように、切断パンチ13が切断面に対して鈍角(従来は直角)で入ることになり、チッピングの抜ける位置を制御することが可能となる。   The processed groove 8 can reduce the load applied to the lead connecting portion 7 of the mold intermediate from the cutting punch 13 and can suppress the occurrence of chipping (6) of the resin portion as in the prior art. There is an advantage of improving the quality of the semiconductor device. Further, even when chipping of the resin portion occurs, the cutting punch 13 enters at an obtuse angle (conventionally at a right angle) with respect to the cut surface as indicated by an arrow 30 in FIG. It is possible to control the position where it comes off.

なお、樹脂部の欠け(6)を嫌って、半導体装置の完全切断を回転ブレードにて作業することも可能ではあるが、実施例は、打ち抜き用の金型12及び切断パンチ13を用いて一括にて製造できるので、コスト的な競争力、スループット的な競争力を持たせることが可能となる。   Although it is possible to work the complete cutting of the semiconductor device with a rotating blade in dislike of the chipping (6) of the resin portion, the embodiment uses the die 12 for punching and the cutting punch 13 at once. Therefore, it is possible to provide cost competitiveness and throughput competitiveness.

図2及び図3は、上述の製造方法によって製作された半導体装置であり、この半導体装置では、樹脂5aとリード7aが交互に配置される端子部9が封止体の端部(底面側)から突出かつ露出する構成となり、この端子部9の先端の上面側には、切断パンチ13の切断により加工溝8の一部が残った段差9Dが設けられる。この突出した端子部9は、実装基板の変形に追従することで、装置としての信頼性が高くなる。   2 and 3 show a semiconductor device manufactured by the above-described manufacturing method. In this semiconductor device, the terminal portion 9 in which the resin 5a and the lead 7a are alternately arranged is an end portion (bottom surface side) of the sealing body. A step 9 </ b> D in which a part of the processing groove 8 remains by cutting the cutting punch 13 is provided on the upper surface side of the tip of the terminal portion 9. The protruding terminal portion 9 follows the deformation of the mounting substrate, thereby increasing the reliability of the device.

上記実施例では、リードフレーム1のリード連結部7の上面(半導体チップ搭載側)に加工溝8を設けたが、この加工溝8を半導体チップ3が搭載されない側の下面に形成し、上面側からリード連結部7を切断するようにしてもよい。
また、実施例は、端子部9が封止体(装置)の両側面から突出するショートリードを備えた構成としたが、端子部が突出せず、リード7aからなる端子が封止体側面の例えば下側の底面と側面に露出するリードレス構成とすることもでき、この場合は、加工溝(8)及び段差(9D)が、図2の封止体において端子部を側面から突出させない状態の底面側に設けられる。
In the above-described embodiment, the processed groove 8 is provided on the upper surface (semiconductor chip mounting side) of the lead connecting portion 7 of the lead frame 1, but this processed groove 8 is formed on the lower surface on the side where the semiconductor chip 3 is not mounted. Alternatively, the lead connecting portion 7 may be cut.
Moreover, although the Example was set as the structure provided with the short lead which the terminal part 9 protrudes from the both sides | surfaces of a sealing body (apparatus), the terminal part does not protrude and the terminal which consists of lead 7a is a sealing body side surface. For example, it may be a leadless structure exposed on the bottom surface and the side surface of the lower side. In this case, the processed groove (8) and the step (9D) do not protrude the terminal portion from the side surface in the sealing body of FIG. Is provided on the bottom surface side.

1…リードフレーム、 2,7a…リード、
3…半導体チップ、 4…ボンディングワイヤ、
5…封止樹脂、 5a…樹脂、
6…樹脂欠け、 7…リード連結部、
8…加工溝、 9…端子部、
9D…段差、 12…打ち抜き金型、
13…切断パンチ。
1 ... lead frame, 2,7a ... lead,
3 ... semiconductor chip, 4 ... bonding wire,
5 ... Sealing resin, 5a ... Resin,
6 ... Less resin, 7 ... Lead connecting part,
8 ... Processed groove, 9 ... Terminal part,
9D ... Step, 12 ... Punching die,
13: Cutting punch.

Claims (3)

チップ単位のチップ実装領域が複数連結された集合リードフレームを用い、この集合リードフレームの複数の上記チップ実装領域の所定部位に半導体チップを搭載すると共に、これら半導体チップをリードに電気的に接続するチップ実装工程と、
上記半導体チップ及びリードをチップ実装領域毎に封止し、このリードの一部が端部に露出し、それぞれのチップ実装領域との間がリード連結部で連結された複数のモールド中間体を形成する中間体形成工程と、
上記モールド中間体間のリード連結部の切断方向の反対の面に加工溝を形成する溝形成工程と、
上記モールド中間体間のリード連結部を上記加工溝が形成されていない面から切断して個々の半導体装置を切り出す切断工程と、を含んでなる半導体装置の製造方法。
Using a collective lead frame in which a plurality of chip mounting areas in units of chips are connected, a semiconductor chip is mounted on a predetermined portion of the plurality of chip mounting areas of the collective lead frame, and these semiconductor chips are electrically connected to leads. Chip mounting process;
The semiconductor chip and the lead are sealed in each chip mounting region, and a part of the lead is exposed at the end, and a plurality of mold intermediates are formed which are connected to each chip mounting region by a lead connecting portion. An intermediate forming step,
A groove forming step of forming a processed groove on a surface opposite to the cutting direction of the lead connecting portion between the mold intermediates;
And a cutting step of cutting each semiconductor device by cutting a lead connecting portion between the mold intermediate bodies from a surface where the processing groove is not formed.
上記集合リードフレームのリード連結部の加工溝は、回転ブレードによって形成し、上記各モールド中間体間のリード連結部の切断は、打ち抜き金型を用いた切断パンチにて行うことを特徴とする請求項1記載の半導体装置の製造方法。   The processing groove of the lead connecting portion of the assembly lead frame is formed by a rotating blade, and the cutting of the lead connecting portion between the mold intermediates is performed by a cutting punch using a punching die. Item 14. A method for manufacturing a semiconductor device according to Item 1. 複数のリードを含むリードフレームと、
このリードフレームに実装された半導体チップと、
上記リードの一部を端子として端部から突出かつ露出させると共に、この端子間を樹脂で埋める状態として、上記半導体チップを樹脂封止してなる樹脂封止体と、
上記端子及びこの端子間の樹脂からなり、上記樹脂封止体の端部から突出かつ露出する突出部であって、その上下面のいずれか一方の端部に上記端子の延出方向に直交する方向に延出する段差が形成された端子部と、を含んでなる半導体装置。


A lead frame including a plurality of leads;
A semiconductor chip mounted on the lead frame;
A resin encapsulant formed by resin-sealing the semiconductor chip as a state in which a part of the lead protrudes and is exposed from an end as a terminal and the space between the terminals is filled with resin,
It is a protrusion part which consists of the said terminal and resin between these terminals, and protrudes and is exposed from the edge part of the said resin sealing body, Comprising: It is orthogonal to the extension direction of the said terminal at either one of the upper-and-lower surface. And a terminal portion formed with a step extending in the direction.


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JP2001077263A (en) * 1999-09-01 2001-03-23 Matsushita Electronics Industry Corp Method for manufacturing resin-encapsulated semiconductor device
JP2003100980A (en) * 2001-09-27 2003-04-04 Hamamatsu Photonics Kk Semiconductor device and manufacturing method thereof
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