JP2017168783A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

Kind Code: A1 A nitride semiconductor device having higher performance can be manufactured by using a substrate made of a single crystal of ScAlMgO4. Kind Code: A1 In a first step S101, the side and bottom surfaces of a substrate made of a single crystal of ScAlMgO4 other than the main surface are covered with a suppressive coating that suppresses diffusion of Mg (suppressive coating coating step), and in a second step S102, the substrate and a nitride semiconductor layer that serves as an element, a suppressing layer that suppresses the diffusion of Mg is formed (suppressing layer forming step). Next, in a third step S103, a layer of nitride semiconductor is laminated on the main surface of the substrate (on the suppression layer) to form an element made of the nitride semiconductor. [Selection diagram] Fig. 1

Description

The present invention relates to a semiconductor device such as a laser element made of a nitride semiconductor manufactured using a single crystal substrate of ScAlMgO ₄ and a manufacturing method thereof.

  Nitride semiconductors such as GaN can obtain materials having an energy gap in a wide range of 0.7 to 6.2 eV by changing the mixing ratio of group III elements. This band gap range completely includes a so-called visible light region, and is used as a material for light emitting elements such as light emitting diodes (LEDs) and semiconductor lasers, taking advantage of these characteristics. Moreover, the energy gap range of nitride semiconductors almost covers the spectrum (wavelength) of sunlight, and has attracted attention as a material that can realize a solar cell with high power generation efficiency. Further, nitride semiconductors are expected to be used as high-frequency / high-power transistor materials by taking advantage of their wide energy gap.

  However, in general, there is a problem that the light emission efficiency and device lifetime of the element made of nitride semiconductor are inferior to the light emitting element made of GaAs or InP-based material. This is because, unlike GaAs and InP, a substrate that is lattice-matched to a nitride semiconductor and can withstand an epitaxial growth environment is not widespread.

Currently, nitride semiconductor devices are generally formed on substrates such as sapphire. However, sapphire (single crystal Al ₂ O ₃ ) has a lattice mismatch of 13.8% with respect to GaN, and due to the lattice mismatch between the substrate and the nitride semiconductor layer, 10 ^8-9 / cm in the nitride semiconductor. ³ high-density crystal defects (threading dislocations) are included, and the light emission efficiency and device life of the device are reduced (see Non-Patent Document 1). In addition, examples of materials lattice-matched to the nitride semiconductor include ZnO and LiGaO ₂ , but these have no resistance to a reducing atmosphere in the epitaxial growth of the nitride semiconductor (see Non-Patent Documents 2 and 3). For this reason, peeling of the nitride semiconductor film often occurs.

On the other hand, by fabricating a device such as a semiconductor laser by laminating a nitride semiconductor layer on the main surface of a substrate made of a single crystal of ScAlMgO ₄ , a device having good characteristics using a nitride semiconductor can be reduced. Technologies that can be easily manufactured at low cost have been proposed.

T. Matsuoka, H. Tanaka, T. Sasaki, and K. Katsui, "Wide-Gap Semiconductor (In, Ga) N", in Inst. Phys. Conf. Ser., Vol.106, pp.141-146, 1990. T. Matsuoka, N. Yoshimoto, T. Sasaki, and K. Katsui, "Wide-Gap Semiconductor InGaN and InGaAlN Grown by MOVPE", J. Electronic Mat., Vol.21, no.2, pp.157-163, 1992. T. Matsuoka and T. Ishii, "Polarity of GaN Grown on (001) β-LiGaO2", in Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1, pp.11-14, 2000.

However, when an element made of a nitride semiconductor is formed using a substrate made of a single crystal of ScAlMgO _4, the crystallinity in the nitride semiconductor layer is remarkably improved, but the expected performance is obtained. There was no problem.

The present invention has been made to solve the above-described problems. By using a substrate made of a single crystal of ScAlMgO ₄ , an element made of a nitride semiconductor having better performance can be manufactured. With the goal.

A method of manufacturing a semiconductor device according to the present invention includes a method of manufacturing a semiconductor device in which an element made of a nitride semiconductor is formed by stacking a nitride semiconductor layer on a main surface of a substrate made of a single crystal of ScAlMgO _4. And a suppression layer forming step for forming a suppression layer for suppressing diffusion of Mg between the nitride semiconductor layer to be an element and a side surface and a bottom surface other than the main surface of the substrate with a suppression film for suppressing diffusion of Mg It comprises at least one of a covering suppression coating covering step.

In the semiconductor device manufacturing method, a nitride semiconductor layer is stacked on a main surface of a substrate made of a single crystal of ScAlMgO ₄ having a main surface perpendicular to the (0001) plane, and is formed on the (0001) surface of the substrate. A laser structure fabrication process for forming a laser structure element having a perpendicular direction as a waveguide direction, and a substrate on which the laser structure is fabricated is cleaved at a (0001) plane to form an end face of the laser structure to resonate the laser structure. Forming a resonator.

In the method of manufacturing a semiconductor device, a nitride semiconductor layer is stacked on a main surface of a substrate made of a single crystal of ScAlMgO ₄ having a (0001) plane as a main surface, and a direction perpendicular to the easy cleavage surface of the substrate is set. A laser structure fabrication process for forming an element of a waveguide type laser structure having a waveguide direction, and an end surface of the laser structure is formed by cleaving the substrate on which the laser structure is fabricated at an easy cleavage surface. And a resonator forming step for forming a resonator.

  In the semiconductor device manufacturing method, the easy cleavage surface is a (1-10-1) surface.

  The method for manufacturing a semiconductor device includes a thinning step of thinning a substrate by cleavage after forming an element.

In addition, a semiconductor device according to the present invention is a semiconductor device including an element composed of a nitride semiconductor layer stacked on the main surface of a substrate made of a single crystal of ScAlMgO ₄ , and is a nitride semiconductor that becomes the substrate and the element And at least one of a suppression layer that suppresses the diffusion of Mg and a suppression film that suppresses the diffusion of Mg formed to cover the side surface and the bottom surface other than the main surface of the substrate.

In the semiconductor device described above, the semiconductor device includes a nitride semiconductor layer stacked on the main surface of a substrate made of a single crystal of ScAlMgO ₄ having a main surface perpendicular to the (0001) plane, and the (0001) plane of the substrate And a resonator having a laser structure constituted by an end face of the laser structure cleaved by the (0001) plane of the substrate on which the laser structure is formed.

In the above semiconductor device, the semiconductor device is composed of a nitride semiconductor layer stacked on the main surface of the substrate made of a single crystal of ScAlMgO ₄ with the (0001) plane as the main surface, and the direction is perpendicular to the easy cleavage surface of the substrate And a resonator having a laser structure constituted by an end face of the laser structure that is cleaved by an easy cleavage surface of the substrate on which the laser structure is formed.

  In the semiconductor device, the easy cleavage surface is the (1-10-1) plane.

As described above, according to the present invention, by using a substrate made of a single crystal of ScAlMgO ₄ , it is possible to obtain an excellent effect that an element made of a nitride semiconductor with better performance can be manufactured.

FIG. 1 is a flowchart for explaining a method of manufacturing a semiconductor device in an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a configuration of a laser element manufactured by the semiconductor device manufacturing method according to the embodiment of the present invention. FIG. 3 is a cross-sectional view showing the configuration of the element used in the experiment. FIG. 4 is a cross-sectional view showing the configuration of the element used in the experiment. FIG. 5 is a characteristic diagram showing the results of evaluating the mobility and carrier concentration in each sample of the experiment in the embodiment of the present invention. FIG. 6 is a characteristic diagram showing the result of the photoluminescence measurement at room temperature for each sample of the experiment in the embodiment of the present invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a flowchart for explaining a method of manufacturing a semiconductor device in an embodiment of the present invention.

First, in the first step S101, the side and bottom surfaces other than the main surface of the substrate made of a single crystal of ScAlMgO ₄ are covered with a suppression coating that suppresses the diffusion of Mg (a suppression coating coating step). For example, a single crystal of ScAlMgO ₄ grown using a high-frequency induction heating type Czochralski furnace was cleaved at the (0001) plane to form a plate having two parallel planes composed of the (0001) plane. A substrate made of a single crystal of ScAlMgO ₄ is obtained.

  Next, a suppression film made of, for example, silicon oxide, silicon nitride, or AlN is formed and covered on the side surface and the bottom surface of the substrate. For example, by using a well-known sputtering apparatus, placing the substrate on the substrate mounting table with the main surface facing down, and depositing any material by sputtering (for example, RF sputtering), the suppression film May be formed.

  Next, in the second step S102, a suppression layer that suppresses the diffusion of Mg is formed between the substrate and the nitride semiconductor layer serving as the element (a suppression layer forming step). The suppression layer may be composed of an AlN layer, for example. The suppression layer may be formed of a superlattice structure in which AlN and GaN are alternately stacked. Here, a buffer layer made of a nitride semiconductor or the like may be formed on the substrate, and a suppression layer may be formed on the buffer layer.

  Next, in a third step S103, a nitride semiconductor layer is stacked on the main surface (suppression layer) of the substrate to form an element made of a nitride semiconductor.

As a result of the inventors' diligent investigation and investigation, when a device made of a nitride semiconductor is formed using a substrate made of a single crystal of ScAlMgO ₄ , the cause of the failure to obtain the expected performance is the constituent material of ScAlMgO _4. It has been found that some Mg is mixed into the element structure layer via the interface due to segregation or diffusion, and is diffused into the crystal growth atmosphere and taken into the element structure. By forming the suppression layer and the suppression film, it is possible to prevent the above-described Mg from being mixed into the element structure layer, and it is possible to manufacture a nitride semiconductor device having better performance.

  Moreover, after forming an element as described above, the substrate can be thinned by cleavage (thinning step). From the viewpoint of heat dissipation, in the completed state, it is desirable to make the substrate as thin as possible. In order to prevent damage to the substrate during crystal growth, the substrate thickness is set to about 400 to 500 μm. In the case of a sapphire substrate, in the step of cutting out elements from the substrate, the thickness of the substrate is reduced to about 50 μm by grinding or the like in order to facilitate the cutting operation. In order not to deteriorate the element characteristics at the time of grinding, the grinding operation must be performed carefully and takes a lot of time. Further, the element is mounted on a heat sink and used. In this case, it is desired that the substrate thickness is thin in order to release heat. However, when a sapphire substrate is used, the limit of thinning is about 50 μm.

On the other hand, when a substrate made of a single crystal of ScAlMgO ₄ is used, the substrate can be thinned by cleavage, and for example, it is very easy to make the thickness about 10 μm. By providing a heat sink or the like on the back surface of the substrate thus thinned, heat can be radiated more efficiently. As described above, by using a substrate made of a single crystal of ScAlMgO ₄ , it is possible to obtain an effect that it is possible to improve extremely important characteristics for a light emitting device that can significantly improve thermal characteristics as compared with a sapphire substrate.

  Hereinafter, the element will be described in more detail with reference to FIG. FIG. 2 is a cross-sectional view showing the configuration of the semiconductor device according to the embodiment of the present invention. Here, a waveguide type semiconductor laser will be described as an example.

This semiconductor laser device includes a substrate 101 made of single crystal ScAlMgO ₄ and a waveguide type laser structure 102 formed on the substrate 101. The laser structure 102 includes a first electrode connection layer 103 made of n-type GaN, a lower waveguide layer 104 made of n-type GaAlN formed on the first electrode connection layer 103, and a lower waveguide layer 104. And a lower carrier confinement layer 105 made of n-type GaN formed thereon.

  The laser structure 102 includes an active layer 106 having a multiple quantum well structure formed on the lower carrier confinement layer 105, an upper carrier confinement layer 107 made of p-type GaAlN formed on the active layer 106, An upper waveguide layer 108 made of p-type GaN formed on the upper carrier confinement layer 107 and a second electrode connection layer 109 made of p-type GaN formed on the upper waveguide layer 108 are provided. . In the active layer 106, for example, five sets of InGaN layers having a thickness of 3.2 nm and GaN layers having a thickness of 4.5 nm are alternately stacked. The upper waveguide layer 108 and the second electrode connection layer 109 are grown as a single p-type GaN layer, and a part thereof is etched to form the second electrode connection layer 109. As a result, the element structure is a ridge waveguide structure.

  In addition, a first electrode 111 connected to the first electrode connection layer 103 and a second electrode 112 connected to the second electrode connection layer 109 are provided. The first electrode 111 is made of Au / Pt / Ti and is ohmically connected to the first electrode connection layer 103, and the second electrode 112 is made of Au / Pt / Pd and is ohmically connected to the second electrode connection layer 109. doing.

  Further, a part of the first electrode connection layer 103, the lower waveguide layer 104, the lower carrier confinement layer 105, the active layer 106, the upper carrier confinement layer 107, and the upper waveguide layer 108 are formed in a predetermined direction extending in the waveguide direction. It is processed into a stripe of width. In FIG. 2, the direction from the back to the front of the paper is the waveguide direction.

  In addition to the above-described configuration, a suppression layer 121 that suppresses the diffusion of Mg is provided between the substrate 101 and the nitride semiconductor layer serving as the laser structure 102 that is an element. Further, a suppression coating 122 that suppresses the diffusion of Mg formed to cover the side surface and the bottom surface other than the main surface of the substrate 101 is provided. The suppression layer 121 is formed on the buffer layer 115 made of a nitride semiconductor such as GaN, for example.

  For example, the laser structure 102 can be formed by epitaxially growing each nitride semiconductor layer by a well-known metal organic chemical vapor deposition method and patterning by a known lithography technique and etching technique.

  The laser structure 102 is formed with two end faces (not shown) at a predetermined interval in the waveguide direction, and these constitute a resonator structure. The two end surfaces may be formed by cleavage or cleavage. For example, after forming the laser structure 102, the substrate 101 is thinned to a thickness of about 60 to 80 μm by polishing or the like, and then cleaved or cleaved at a desired location, so that the two end surfaces that are mirror surfaces are It can be easily formed without cost.

For example, if the substrate 101 is made of a single crystal of ScAlMgO _{4 and} the surface perpendicular to the (0001) plane is the main surface, the waveguide direction of the laser structure 102 is the (0001) plane in the surface direction of the substrate 101. A vertical direction may be used. With this configuration, the substrate 101 on which the laser structure 102 is manufactured is cleaved at the (0001) plane, whereby the end surface of the laser structure 102 is formed, and thereby the resonator of the laser structure 102 can be configured. it can.

For example, if the (−12-10) plane of single crystal ScAlMgO ₄ is the main surface of the substrate 101, the (0001) plane can be cleaved. Further, when a nitride semiconductor is epitaxially grown on this surface, the nitride semiconductor grows in the a-axis direction, and the surface of the formed nitride semiconductor layer becomes an a-plane [(-12-10) plane]. Further, in this plane, the lattice mismatch with GaN can be made extremely small as 3.2% in the in-plane c-axis direction and -1.8% in the in-plane m-axis direction.

Further, even if the (01-10) plane of the single crystal ScAlMgO ₄ is used as the main surface of the substrate 101, the (0001) plane can be cleaved. Further, when a nitride semiconductor is epitaxially grown on this surface, the nitride semiconductor grows in the m-axis direction, and the surface of the formed nitride semiconductor layer becomes an m-plane [(01-10) plane]. Further, in this plane, the lattice mismatch with GaN can be made extremely small, ie, 3.2% in the in-plane c-axis direction and -1.8% in the in-plane a-axis direction.

Further, if the substrate 101 is composed of a single crystal of ScAlMgO ₄ and the (0001) plane is the main surface, the waveguide direction of the laser structure 102 is perpendicular to the cleavage plane of the substrate 101 in the surface direction of the substrate 101. The direction should be correct. With this configuration, the end surface of the laser structure 102 can be formed by cleaving the substrate 101 on which the laser structure 102 is manufactured with an easy-cleavage surface. A resonator of the laser structure 102 can be constituted by the end face formed in this manner.

For example, the (1-10-1) plane of single crystal ScAlMgO ₄ is an easy cleavage plane. This surface can be considered to be a surface that is easy to cleave (easy cleaving surface) because the surface density of dangling bonds is small and the same number of cations and anions appear on the opposing surfaces. When the (0001) plane of single crystal ScAlMgO ₄ is used as the main surface of the substrate 101, the surface of the formed nitride semiconductor is a c plane.

Next, an experimental result using an actually manufactured element will be described. In the experiment, an element produced using a sapphire substrate (sample 1), an element produced using a substrate made of ScAlMgO ₄ single crystal (sample 2), and a suppression layer produced using a substrate made of ScAlMgO ₄ single crystal. An element (sample 3) including a suppression layer and a suppression film manufactured using a substrate made of a single crystal of ScAlMgO ₄ was prepared. Sample 1 was a sapphire 0.2 ° C. off substrate for reference.

As shown in FIG. 3, the sample 3 is formed on a GaN layer 202 formed on a substrate 201 made of a single crystal of ScAlMgO ₄ , an undoped GaN layer 203 formed on the GaN layer 202, and a GaN layer 203. A suppression layer 211 made of AlN, an undoped GaN layer 204 formed on the suppression layer 211, and an n-type GaN layer 205 formed on the undoped GaN layer 204. The main surface of the substrate 201 is a c-plane.

  For example, after the substrate 201 is organically cleaned, the surface of the substrate 201 is cleaned with hydrogen. For example, the substrate 201 may be heated at 1175 ° C. for 8 minutes in a hydrogen atmosphere. Next, a GaN layer 202 is formed on the hydrogen-cleaned substrate 201 by a well-known metal organic chemical vapor deposition method. For example, ammonia and trimethyl gallium may be used as raw materials, and the GaN layer 202 that is not crystallized may be formed under a low temperature condition of about 550 ° C., for example. The layer thickness of the GaN layer 202 may be about 20 nm.

  Subsequently, GaN is grown on the GaN layer 202 at a substrate temperature condition of 1070 ° C. by a well-known metal organic chemical vapor deposition method to form an undoped GaN layer 203. The GaN layer 203 is formed to a thickness of about 1.8 μm.

  Next, on the GaN layer 203, the substrate temperature condition is set to 1070 ° C. by a well-known metal organic chemical vapor deposition method, AlN is grown using ammonia and trimethylaluminum as raw materials, and the suppression layer 211 having a thickness of about 15 nm is formed. Form. Subsequently, undoped GaN is grown at a substrate temperature of 1070 ° C., and a GaN layer 204 is formed to a thickness of about 0.6 μm. Next, the substrate temperature condition is set to 1070 ° C., Si is doped to grow n-type GaN, and the GaN layer 205 is formed to a thickness of about 1.8 μm.

On the other hand, as shown in FIG. 4, the sample 4 has a GaN layer 202 formed on a substrate 201 made of a single crystal of ScAlMgO ₄ , an undoped GaN layer 203 formed on the GaN layer 202, and a GaN layer 203. A suppression layer 211 made of AlN, an undoped GaN layer 204 formed on the suppression layer 211, and an n-type GaN layer 205 formed on the undoped GaN layer 204. These configurations are the same as those of the sample 3. In the sample 4, a suppression film 212 covering the side surface and the bottom surface other than the main surface of the substrate 201 is formed.

  For example, before forming the GaN layer 202, silicon oxide is deposited by RF sputtering to form the suppression film 212, and then each layer is formed in the same manner as the sample 3 described above.

  Sample 2 was fabricated in the same manner except for formation of the suppression layer 121 of sample 3.

  Next, evaluation of each sample will be described. First, the mobility and carrier concentration in each sample were evaluated. In this evaluation, Hall effect measurement was performed at room temperature. In addition, measurement was performed using an electrode made of In.

As shown in FIG. 5, the hole mobility and the carrier concentration are decreased in the sample 2 using a single crystal of ScAlMgO _{4 as} the substrate material as compared with the reference sample 1 using a sapphire substrate. In Sample 2, the suppression layer and the suppression film are not formed. Therefore, in Sample 2, Mg is mixed in the n-type GaN layer during the manufacturing process, which acts as an acceptor and compensates for electrons of n-type carriers due to Si doping, so that the carrier concentration is considered to be low. It is done.

  Compared to the sample 2 described above, first, in the sample 3 in which the suppression layer is formed, the hole mobility and the carrier concentration are improved as compared with the sample 2. Further, in Sample 4 in which the suppression layer and the suppression film were formed, the hole mobility and carrier concentration were almost identical to those of Sample 1 and recovered. From these results, it is considered that mixing was suppressed by using a suppression layer or a suppression film.

  Next, photoluminescence measurement at room temperature of each sample was performed. A He—Cd laser having an oscillation wavelength of 325 nm was used for excitation of each sample.

  As shown in FIG. 6, in sample 1, light emission near the band edge is confirmed from the n-type GaN layer doped with Si, and no other light emission is observed. This indicates that no light emission due to the acceptor level due to impurity contamination is observed. On the other hand, in Sample 2, light emission due to the acceptor level was strongly observed from the n-type GaN layer compared to light emission near the band edge.

  Compared to the sample 2 described above, in the sample 3 in which the suppression layer was formed, light emission due to the acceptor level from the n-type GaN layer was slightly reduced. Further, in Sample 4 in which the suppression layer and the suppression film were formed, light emission due to the acceptor level from the n-type GaN layer was significantly reduced. From these results, it can be seen that by using the suppression layer and the suppression film, mixing of impurities could be suppressed.

As described above, according to the present invention, the suppression layer for suppressing the diffusion of Mg is formed between the substrate and the nitride semiconductor layer to be an element, and the side surface and the bottom surface other than the main surface of the substrate are formed. Since a substrate made of ScAlMgO ₄ single crystal is used, an element made of a nitride semiconductor with better performance can be manufactured.

By using a substrate made of a single crystal of ScAlMgO ₄ , the lattice mismatch rate with GaN is one order of magnitude smaller than that of sapphire, which is a conventionally used substrate, so that the threading dislocation density per unit area is reduced by two orders of magnitude. Further, by utilizing the cleavage property of the ScAlMgO ₄ substrate, the substrate can be easily thinned after the device is fabricated, and can be made very thin. By mounting the element on the heat sink with the substrate being thinned in this way, it is possible to obtain an effect that it is possible to improve extremely important characteristics for the light-emitting element that the thermal characteristics can be greatly improved compared to the sapphire substrate.

  The present invention is not limited to the embodiment described above, and many modifications and combinations can be implemented by those having ordinary knowledge in the art within the technical idea of the present invention. It is obvious. For example, in the above description, the semiconductor laser has been described as an example, but an LED can be formed by adopting a configuration in which a resonator structure is not formed. A transistor using a nitride semiconductor can also be formed as an element.

  DESCRIPTION OF SYMBOLS 101 ... Substrate, 102 ... Laser structure, 103 ... First electrode connection layer, 104 ... Lower waveguide layer, 105 ... Lower carrier confinement layer, 106 ... Active layer, 107 ... Upper carrier confinement layer, 108 ... Upper waveguide layer, 109 ... second electrode connection layer, 111 ... first electrode, 112 ... second electrode, 115 ... buffer layer, 121 ... suppression layer, 122 ... suppression coating.

Claims (9)

In a method for manufacturing a semiconductor device in which a nitride semiconductor layer is stacked on a main surface of a substrate made of a single crystal of ScAlMgO ₄ to form an element made of a nitride semiconductor,
A suppression layer forming step of forming a suppression layer for suppressing diffusion of Mg between the substrate and the nitride semiconductor layer to be the element;
and,
A method of manufacturing a semiconductor device, comprising: at least one of a suppression film covering step of covering a side surface and a bottom surface other than the main surface of the substrate with a suppression film that suppresses diffusion of Mg. In the manufacturing method of the semiconductor device according to claim 1,
A nitride semiconductor layer is laminated on the main surface of the substrate made of a single crystal of ScAlMgO ₄ having a main surface perpendicular to the (0001) plane, and guided in a direction perpendicular to the (0001) plane of the substrate. A laser structure manufacturing step of forming the element having a laser structure oriented;
And a resonator forming step of cleaving the substrate on which the laser structure is formed at a (0001) plane to form an end surface of the laser structure to form a resonator of the laser structure. Manufacturing method. In the manufacturing method of the semiconductor device according to claim 1,
A nitride semiconductor layer is laminated on the main surface of the substrate made of a single crystal of ScAlMgO ₄ with the (0001) plane as the main surface, and the direction perpendicular to the easy-cleavage surface of the substrate is the waveguide direction. A laser structure manufacturing step for forming the element of the waveguide type laser structure;
And a resonator forming step of forming an end surface of the laser structure to form a resonator of the laser structure by cleaving the substrate on which the laser structure is formed with an easy-cleavage surface. Device manufacturing method. In the manufacturing method of the semiconductor device according to claim 3,
The method of manufacturing a semiconductor device, wherein the easy cleavage surface is a (1-10-1) plane. In the manufacturing method of the semiconductor device according to claim 1,
A method of manufacturing a semiconductor device, comprising: a thinning step of thinning the substrate by cleavage after forming the element. A semiconductor device comprising an element composed of a nitride semiconductor layer laminated on the main surface of a substrate made of a single crystal of ScAlMgO ₄ ,
A suppression layer for suppressing the diffusion of Mg between the substrate and the nitride semiconductor layer to be the element,
and,
A semiconductor device comprising: at least one of suppression films that suppress diffusion of Mg formed to cover side surfaces and bottom surfaces other than the main surface of the substrate. The semiconductor device according to claim 6,
A direction composed of a nitride semiconductor layer stacked on the main surface of the substrate made of a single crystal of ScAlMgO ₄ having a surface perpendicular to the (0001) plane as a main surface, and perpendicular to the (0001) plane of the substrate The element having a laser structure with a waveguide direction of
A semiconductor device comprising: a resonator of the laser structure configured by an end face of the laser structure cleaved by a (0001) plane of the substrate on which the laser structure is manufactured. The semiconductor device according to claim 6,
It is composed of a nitride semiconductor layer stacked on the main surface of the substrate made of a single crystal of ScAlMgO ₄ with the (0001) plane as the main surface, and the direction perpendicular to the easy-cleavage surface of the substrate is the waveguide direction The element of the waveguide type laser structure,
A semiconductor device comprising: a resonator of the laser structure configured by an end surface of the laser structure that is cleaved by an easy cleavage surface of the substrate on which the laser structure is manufactured. The semiconductor device according to claim 8,
The semiconductor device according to claim 1, wherein the easy cleavage surface is a (1-10-1) surface.

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