JP2017162941A - Light-emitting device and illuminating device - Google Patents

Abstract

A light-emitting device with improved light extraction efficiency is provided. A light emitting device includes a substrate, a plurality of LED chips arranged on the substrate, and a wavelength conversion layer disposed on each upper surface of the plurality of LED chips. And a wavelength conversion layer 14a having translucency. An air layer 13 is provided between the plurality of LED chips 12 to cover the side surfaces of the plurality of LED chips 12. [Selection] Figure 4

Description

  The present invention relates to a light emitting device and a lighting device using the light emitting device.

  2. Description of the Related Art Conventionally, a COB (Chip On Board) type light emitting device (light emitting module) in which an LED (Light Emitting Diode) chip mounted on a substrate is sealed with a sealing member formed of a resin containing a phosphor is known. (For example, refer to Patent Document 1).

JP 2011-146640 A

  For example, a light-emitting device used as a light source such as a spotlight or a projector is required to be easy to control light distribution and to have a high luminous flux. In order to satisfy such a requirement, in order to emit bright light from a small light emitting region in the light emitting device, it is necessary to arrange a plurality of LED chips densely. When LED chips are densely arranged, the light extraction efficiency is lowered due to absorption of light emitted from the side of one LED chip by another LED chip.

  The present invention provides a light emitting device and a lighting device with improved light extraction efficiency.

  A light-emitting device according to one embodiment of the present invention includes a substrate, a plurality of light-emitting elements disposed on the substrate, and a wavelength conversion layer disposed on an upper surface of each of the plurality of light-emitting elements. And a wavelength conversion layer having translucency, and an air layer covering each side surface of the plurality of light emitting elements is provided between the plurality of light emitting elements.

  An illumination device according to one embodiment of the present invention includes the light-emitting device and a lighting device that supplies power to the light-emitting device to light the light-emitting device.

  ADVANTAGE OF THE INVENTION According to this invention, the light-emitting device and illuminating device with which the extraction efficiency of light was improved are implement | achieved.

FIG. 1 is an external perspective view of the light emitting device according to Embodiment 1. FIG. FIG. 2 is a plan view of the light emitting device according to the first embodiment. FIG. 3 is a plan view showing the internal structure of the light emitting device according to Embodiment 1. FIG. FIG. 4 is a schematic cross-sectional view of the light emitting device taken along line IV-IV in FIG. FIG. 5 is a flowchart of the method for manufacturing the light emitting device according to the first embodiment. FIG. 6 is a schematic cross-sectional view of a light emitting device according to Modification 1. FIG. 7 is a schematic cross-sectional view of a light emitting device according to Modification 2. FIG. 8 is a cross-sectional view of the lighting apparatus according to Embodiment 2. FIG. 9 is an external perspective view of the lighting device and its peripheral members according to Embodiment 2.

  Hereinafter, embodiments will be described with reference to the drawings. It should be noted that each of the embodiments described below shows a comprehensive or specific example. The numerical values, shapes, materials, constituent elements, arrangement positions and connecting forms of the constituent elements, steps, order of steps, and the like shown in the following embodiments are merely examples, and are not intended to limit the present invention. In addition, among the constituent elements in the following embodiments, constituent elements that are not described in the independent claims indicating the highest concept are described as optional constituent elements.

  Each figure is a schematic diagram and is not necessarily shown strictly. Moreover, in each figure, the same code | symbol is attached | subjected to the substantially same structure, and the overlapping description may be abbreviate | omitted or simplified. For example, in the modified example in the following embodiment, the description will be focused on differences from the embodiment described before the modified example.

  In the drawings used for explanation in the following embodiments, coordinate axes may be shown. The Z-axis direction in the coordinate axes is, for example, the vertical direction, the Z-axis + side is expressed as the upper side (upper), and the Z-axis-side is expressed as the lower side (lower). In other words, the Z-axis direction is a direction perpendicular to the substrate included in the light emitting device. The X-axis direction and the Y-axis direction are directions orthogonal to each other on a plane (horizontal plane) perpendicular to the Z-axis direction. The XY plane is a plane parallel to the main surface of the substrate included in the light emitting device. For example, in the following embodiments, the “planar shape” means a shape viewed from the Z-axis direction.

(Embodiment 1)
[Configuration of light emitting device]
First, the structure of the light-emitting device according to Embodiment 1 will be described with reference to the drawings. FIG. 1 is an external perspective view of the light emitting device according to Embodiment 1. FIG. FIG. 2 is a plan view of the light emitting device according to the first embodiment. FIG. 3 is a plan view showing the internal structure of the light emitting device according to Embodiment 1. FIG. 4 is a schematic cross-sectional view taken along line IV-IV in FIG. 3 is a plan view showing the arrangement of the LED chips 12 with the wavelength conversion material 14 removed in FIG. 1 to 4, illustration of wiring patterns on the substrate 11 and bonding wires used for electrical connection of the LED chip 12 is omitted.

  As shown in FIGS. 1 to 4, the light emitting device 10 according to the first embodiment includes a substrate 11, a plurality of LED chips 12, and a wavelength conversion material 14.

  The light emitting device 10 is an LED module having a so-called COB (Chip On Board) structure in which an LED chip 12 is directly mounted on a substrate 11. For example, the light emitting device 10 is used as a light source such as a spotlight or a projector, but may be used as a light source of other lighting devices. In the light emitting device 10, a plurality of LED chips 12 are densely mounted (closely arranged) in order to emit bright light from a small light emitting region. Thereby, the light-emitting device 10 with high luminous flux and easy light distribution control is realized.

  The board | substrate 11 is a board | substrate which has a wiring area | region in which wiring (not shown) was provided. The wiring is a metal wiring for supplying power to the LED chip 12. An electrode for electrically connecting the light emitting device 10 and an external device is provided on the substrate 11 as a part of the wiring. The substrate 11 is, for example, a metal base substrate or a ceramic substrate. The substrate 11 may be a resin substrate having a resin as a base material.

  As the ceramic substrate, an alumina substrate made of aluminum oxide (alumina), an aluminum nitride substrate made of aluminum nitride, or the like is employed. As the metal base substrate, for example, an aluminum alloy substrate, an iron alloy substrate, a copper alloy substrate, or the like having an insulating film formed on the surface is employed. As the resin substrate, for example, a glass epoxy substrate made of glass fiber and epoxy resin is employed.

  As the substrate 11, for example, a substrate having a high light reflectance (for example, a light reflectance of 90% or more) may be employed. By adopting a substrate having a high light reflectance as the substrate 11, the light emitted from the LED chip 12 can be reflected on the surface of the substrate 11. As a result, the light extraction efficiency of the light emitting device 10 is improved. An example of such a substrate is a white ceramic substrate based on alumina.

  Further, as the substrate 11, a translucent substrate having a high light transmittance may be adopted. Examples of such a substrate include a transparent ceramic substrate made of polycrystalline alumina or aluminum nitride, a transparent glass substrate made of glass, a crystal substrate made of crystal, a sapphire substrate made of sapphire, or a transparent resin substrate made of a transparent resin material. Illustrated.

  In the first embodiment, the substrate 11 is rectangular, but may be other shapes such as a circle.

  The LED chip 12 is an example of a light emitting element, and is disposed (mounted) on the substrate 11. The LED chip 12 is a gallium nitride-based blue LED chip made of, for example, an InGaN-based material and having a center wavelength (emission spectrum peak wavelength) of 430 nm or more and 480 nm or less. That is, the LED chip 12 emits blue light.

  The shape of the LED chip 12 is, for example, a rectangle. Moreover, the mounting method of the LED chip 12 is not particularly limited. The LED chip 12 may be flip-chip mounted (face-down mounting) or face-up mounted. The plurality of LED chips 12 are arranged in a matrix, for example, but the arrangement of the plurality of LED chips 12 is not particularly limited.

  The plurality of LED chips 12 mounted on the substrate 11 are all electrically connected so that they can be turned on and off collectively. For electrical connection, wiring on the substrate 11 and bonding wires are used. For example, gold (Au), silver (Ag), copper (Cu), or the like is employed as the metal material for the wiring and the bonding wire. The bonding wire may not be used when the LED chip 12 is flip-chip mounted.

  In the first embodiment, the plurality of LED chips 12 are densely mounted. As shown in FIG. 3, the arrangement interval W1 in the lateral direction (X-axis direction) of the LED chip 12 is shorter than any of the width W2 in the longitudinal direction and the width W3 in the lateral direction of the LED chip 12. The arrangement interval W4 in the vertical direction (Y-axis direction) of the LED chip 12 is shorter than any of the width W2 in the longitudinal direction and the width W3 in the short direction of the LED chip 12. The width W2 in the longitudinal direction of the LED chip 12 is, for example, about 1 mm, and the width W3 in the short direction of the LED chip 12 is, for example, about 0.8 mm.

  Specifically, each of the arrangement interval W1 and the arrangement interval W4 of the LED chip 12 is, for example, about 0.1 mm, and is about 1/10 of the width W2 of the LED chip 12 in the longitudinal direction. In dense mounting, each of the arrangement interval W1 and the arrangement interval W4 of the LED chips 12 is, for example, one fifth or less of the longitudinal width W2 of the LED chips 12.

  The wavelength conversion material 14 covers the entire plurality of LED chips 12. The wavelength conversion material 14 is a dome-shaped member having a rectangular shape in plan view. The wavelength conversion material 14 may be a dome shape having a circular shape in plan view. The plurality of LED chips 12 may be arranged corresponding to the shape of the wavelength conversion material 14. Thus, according to the wavelength conversion material 14 covering the whole of the plurality of LED chips 12, the plurality of LED chips 12 can be protected.

  Specifically, the wavelength conversion material 14 includes a wavelength conversion layer 14 a disposed on the upper surface of each of the plurality of LED chips 12. Further, the wavelength conversion material 14 includes a wavelength conversion layer 14 b that covers a side surface of the LED chip 12 that is located at the end in the arrangement of the plurality of LED chips 12 and that does not face the other LED chips 12. The wavelength conversion layer 14b has a rectangular annular shape, but may be annular when the wavelength conversion material 14 has a circular shape in plan view.

  Specifically, the wavelength conversion material 14 is a translucent resin material containing a phosphor. That is, each of the wavelength conversion material 14, the wavelength conversion layer 14a, and the wavelength conversion layer 14b contains a phosphor and has translucency. The base material (translucent resin material) of the wavelength conversion material 14 is, for example, a methyl silicone resin, but may be an epoxy resin or a urea resin.

  The wavelength conversion material 14 includes, for example, a yellow phosphor. Specifically, the yellow phosphor is, for example, an yttrium-aluminum-garnet (YAG) phosphor having an emission peak wavelength of 550 nm to 570 nm.

  When the LED chip 12 emits blue light, a part of the emitted blue light is wavelength-converted to yellow light by the yellow phosphor included in the wavelength conversion material 14. The blue light that has not been absorbed by the yellow phosphor and the yellow light that has been wavelength-converted by the yellow phosphor are diffused and mixed in the wavelength conversion material 14. Thereby, white light is emitted from the light emitting device 10 (wavelength conversion material 14).

In addition, the fluorescent substance contained in the wavelength conversion material 14 is not specifically limited. The wavelength conversion material 14 may include a phosphor that is excited by light emitted from the LED chip 12. For example, the wavelength conversion material 14 may contain a green phosphor instead of the yellow phosphor or in addition to the yellow phosphor. The green phosphor is, for example, a Y ₃ (Al, Ga) ₅ O ₁₂ : Ce ³⁺ phosphor or a Lu ₃ Al ₅ O ₁₂ : Ce ³⁺ phosphor having an emission peak wavelength of 515 nm or more and 550 nm or less.

In addition to the yellow phosphor, the wavelength conversion material 14 may contain a red phosphor. Thereby, the color rendering property of the white light which the light-emitting device 10 emits can be improved. The red phosphor is, for example, a CaAlSiN ₃ : Eu ²⁺ phosphor or (Sr, Ca) AlSiN ₃ : Eu ²⁺ phosphor having an emission peak wavelength of 610 nm or more and 620 nm or less.

  By the way, an air layer 13 that covers the side surfaces of the two LED chips 12 is provided between two adjacent LED chips 12 among the plurality of LED chips 12. That is, each side surface of the plurality of LED chips 12 is covered with air except for the side surface covered with the wavelength conversion layer 14b. Hereinafter, effects obtained by such a configuration will be described.

  The LED chip 12 emits light mainly upward. That is, the LED chip 12 emits light mainly toward the wavelength conversion layer 14a. However, there is also light emitted from the LED chip 12 to the side of the LED chip 12. As described above, in the light emitting device 10, the plurality of LED chips 12 are densely arranged. That is, since the intervals between the plurality of LED chips 12 are narrow, there is a high probability that the light emitted from one LED chip 12 to the side of the LED chip 12 will hit another LED chip 12 and be absorbed. Therefore, the light extraction efficiency decreases.

  Here, if an air layer 13 that covers the side surfaces of the two LED chips 12 is provided between two adjacent LED chips 12, the refractive index of the air layer 13 is small, as shown in FIG. In addition, the light is reflected at the interface between the air layer 13 and the LED chip 12. That is, the light emitted from the side surface is limited, and the light absorbed by the other LED chips 12 can be reduced.

  And if the light reflected in the interface of the air layer 13 and LED chip 12 is radiate | emitted from the upper surface of LED chip 12 after that, the light radiate | emitted from the upper surface of LED chip 12 can be increased.

  As described above, the light reflected by the air layer 13 suppresses the light emitted from one LED chip 12 to the side of the LED chip 12 from being absorbed by the other LED chips 12, and the LED. The light emitted from the upper surface of the chip 12 can be increased. That is, the light extraction efficiency can be improved.

  According to the experiments conducted by the inventors, when the light extraction efficiency in the light emitting device 10 is 1, when the air layer 13 is filled with the silicone resin in the light emitting device 10 (a silicone resin is disposed in place of the air layer 13). The light extraction efficiency is 0.94. In the light emitting device 10, when the air layer 13 is filled with a wavelength conversion material 14 based on a silicone resin (when the wavelength conversion material 14 is disposed in place of the air layer 13), the light extraction efficiency is 0. 93.

  Thus, the light extraction efficiency can be improved by covering each side surface of the plurality of LED chips 12 with air.

  In addition, it is not necessary to cover all the side surfaces of the plurality of LED chips 12 with air. It is sufficient that at least one of the side surfaces of one LED chip 12 is covered with air. For example, the side surface of the LED chip 12 positioned at the end in the arrangement of the plurality of LED chips 12 that does not face the other LED chips 12 does not need to be covered with the air layer 13. Such side surfaces are preferably covered with the wavelength conversion layer 14b. Thereby, the light radiate | emitted from the side surface which does not oppose the other LED chip 12 of the LED chip 12 located in an edge part in arrangement | positioning of the several LED chip 12 can be utilized as white light. That is, the light extraction efficiency can be improved.

[Method for Manufacturing Light Emitting Device]
Next, a method for manufacturing the light emitting device 10 will be described. FIG. 5 is a flowchart of the method for manufacturing the light emitting device 10. The following manufacturing method is an example.

  First, a plurality of LED chips 12 are mounted on the upper surface of the substrate 11 (S11). The LED chip 12 is mounted by die bonding the LED chip 12 with a die attach agent or the like. At this time, the plurality of LED chips 12 are electrically connected by, for example, bonding wires and wiring.

  Next, the wavelength conversion material 14 is formed (S12). Specifically, a translucent resin material including a phosphor for forming the wavelength conversion layer 14 a is applied to the upper surface of the LED chip 12. Moreover, the translucent resin material containing the fluorescent substance for forming the wavelength conversion layer 14b is apply | coated so that the some LED chip 12 may be enclosed from a side.

  Thereafter, the applied light transmitting resin material is cured by heating or light irradiation, whereby the wavelength conversion material 14 is formed. In order to prevent the light-transmitting resin material from entering the gap between the two adjacent LED chips 12 and the air layer 13 from being lost, the light-emitting device 10 is manufactured with a high-viscosity light-transmitting property. A resin material is preferably used.

  Instead of applying the translucent resin material, a molded (solid) wavelength conversion material 14 may be placed on the upper surfaces of the plurality of LED chips 12. In this case, in order to bond the molded wavelength conversion material 14 to the upper surfaces of the plurality of LED chips 12, the molded wavelength conversion material 14 is placed on the upper surfaces of the plurality of LED chips 12 with an adhesive sheet material interposed therebetween. May be placed.

  The adhesive sheet material is a translucent resin member for adhering the wavelength conversion material 14. The adhesive sheet material is preferably flexible so as to be in close contact with each of the wavelength conversion material 14 and the plurality of LED chips 12. Further, the adhesive sheet material may include a phosphor.

[Modification 1]
In the first embodiment, the wavelength conversion layer 14 a is also provided above the air layer 13. However, the wavelength conversion layer 14a may be disposed at least on the upper surface of each of the plurality of LED chips 12, and may not be disposed above the air layer 13. FIG. 6 is a schematic cross-sectional view of the light emitting device according to the first modification.

  In the light emitting device 10a shown in FIG. 6, the upper part of the air layer 13 is opened. Here, in the light emitting device 10 described above, since the air layer 13 is hermetically sealed, the wavelength conversion material 14 may be deformed or damaged when the air layer 13 expands and contracts due to a temperature change.

  On the other hand, in the light emitting device 10a, the upper part of the air layer 13 is opened. Therefore, the light emitting device 10a can prevent the wavelength conversion layer 14a from being deformed or damaged due to the expansion and contraction of the air layer 13. That is, the light emitting device 10a has improved reliability.

  The light emitting device 10a is manufactured, for example, by selectively applying a translucent resin material including a phosphor for forming the wavelength conversion layer 14a on the upper surface of the LED chip 12.

[Modification 2]
In the first embodiment, the side surface of the LED chip 12 positioned at the end in the arrangement of the plurality of LED chips 12 that does not face the other LED chips 12 is covered with the wavelength conversion layer 14b. However, the side surface of the LED chip 12 located at the end in the arrangement of the plurality of LED chips 12 that does not face the other LED chips 12 may be covered with a reflective material. FIG. 7 is a schematic cross-sectional view of a light emitting device according to Modification 2.

  The light emitting device 10b shown in FIG. 7 includes a reflective material 15 that is disposed on the substrate 11 and surrounds the plurality of LED chips 12 from the side, and has light reflectivity. The planar view shape of the reflecting material 15 is a rectangular ring shape, but may be an annular shape. In addition, the wavelength conversion material 14c with which the light-emitting device 10b is provided is formed in plate shape, for example. The material (base material) of the wavelength conversion material 14c is the same as that of the wavelength conversion material 14. The wavelength conversion layer 14a is formed as a part of the wavelength conversion material 14c, for example.

As the reflective material 15, for example, a white resin (so-called white resin) is used. In addition, in order to improve the light reflectivity of the reflective material 15, the reflective material 15 may include light reflective particles such as TiO ₂ , Al ₂ O ₃ , ZrO ₂ , and MgO. The reflective material 15 may be formed of any material as long as it has light reflectivity by including a white pigment or the light reflective particles. For example, a silicone resin, a phenol resin, an epoxy resin, a bismaleimide triazine resin, a polyphthalamide (PPA) resin, or the like is used for the reflective material 15. The reflective material 15 may be formed of a material other than resin. Moreover, the reflecting material 15 may be formed of, for example, a ceramic having light reflectivity.

  According to the reflecting material 15, the light emitted from the side surface of the LED chip 12 covered with the reflecting material 15 can be reflected and extracted from the upper surface of the LED chip 12.

[Effects]
As described above, the light emitting device 10 includes the substrate 11, the plurality of LED chips 12 disposed on the substrate 11, and the wavelength conversion layer 14 a disposed on the upper surface of each of the plurality of LED chips 12, A wavelength conversion layer 14a containing a phosphor and having translucency. An air layer 13 is provided between the plurality of LED chips 12 to cover the side surfaces of the plurality of LED chips 12.

  Thereby, after the light emitted from the side surface of the LED chip 12 is reflected by the air layer 13, it is reflected in the LED chip 12. If the light reflected in the LED chip 12 is emitted from the upper surface of the LED chip 12, the light emitted from the upper surface of the LED chip 12 can be increased. That is, the light extraction efficiency can be improved.

  Further, like the light emitting device 10a, the wavelength conversion layer 14a may not be disposed above the air layer 13.

  Thereby, since the air layer 13 is not covered with the wavelength conversion layer 14 a, the light emitting device 10 a can prevent the wavelength conversion layer 14 a from being deformed or damaged due to the expansion and contraction of the air layer 13.

  The light emitting device 10 is a wavelength conversion material 14 that covers the whole of the plurality of LED chips 12, and includes a wavelength conversion material 14 that contains a phosphor and has translucency, and the wavelength conversion layer 14a includes: It may be a part of the wavelength conversion material 14.

  Thereby, the plurality of LED chips 12 can be protected by the wavelength conversion material 14.

  Further, the side surface of the LED chip 12 positioned at the end in the arrangement of the plurality of LED chips 12 that does not face the other LED chips 12 is covered with a wavelength conversion layer 14b that contains a phosphor and has translucency. It may be broken.

  Thereby, the light radiate | emitted from the side surface which does not oppose the other LED chip 12 of the LED chip 12 located in an edge part in arrangement | positioning of the several LED chip 12 can be utilized as white light. That is, the light extraction efficiency can be improved.

  In addition, as in Modification 2, the light emitting device 10b may include a light reflecting material 15 that surrounds the plurality of LED chips 12 from the side. The side surface of the LED chip 12 positioned at the end in the arrangement of the plurality of LED chips 12 that does not face the other LED chips 12 may be covered with the reflective material 15.

  Thereby, the light emitted from the side surface of the LED chip 12 covered with the reflecting material 15 can be reflected and extracted from the upper surface of the LED chip 12.

  Further, the arrangement interval of the plurality of LED chips 12 may be shorter than the width of one LED chip 12 of the plurality of LED chips 12.

  As described above, the plurality of LED chips 12 are densely mounted (densely arranged), whereby the light emitting device 10 with high luminous flux and easy light distribution control is realized.

(Embodiment 2)
Next, the illumination device 200 according to Embodiment 2 will be described with reference to FIGS. FIG. 8 is a cross-sectional view of lighting apparatus 200 according to Embodiment 2. FIG. 9 is an external perspective view of lighting device 200 and its peripheral members according to Embodiment 2. FIG.

  As shown in FIGS. 8 and 9, the lighting device 200 according to Embodiment 2 is, for example, a down type that irradiates light downward (such as a hallway or a wall) by being embedded in a ceiling of a house or the like. It is an embedded illumination device such as a light.

  The lighting device 200 includes the light emitting device 10. The lighting device 200 further includes a substantially bottomed tubular instrument body configured by coupling the base 210 and the frame body part 220, and a reflector 230 and a translucent panel 240 disposed in the instrument body. Is provided. Note that when the light emitting device 10 is used in a lighting device having a circular light emission port like the lighting device 200, the planar view shape of the wavelength conversion material 14 included in the light emitting device 10 may be circular.

  The base 210 is a mounting base to which the light emitting device 10 is attached and a heat sink that dissipates heat generated in the light emitting device 10. Base 210 is formed in a substantially cylindrical shape using a metal material, and is formed of aluminum in the second embodiment.

  A plurality of radiating fins 211 projecting upward are provided on the upper portion (ceiling side portion) of the base portion 210 at regular intervals along one direction. Thereby, the heat generated in the light emitting device 10 can be radiated efficiently.

  The frame body part 220 has a substantially cylindrical cone part 221 having a reflection surface on the inner surface, and a frame body part 222 to which the cone part 221 is attached. The cone portion 221 is formed using a metal material, and can be manufactured by drawing or press-molding an aluminum alloy or the like, for example. The frame main body 222 is formed of a hard resin material or a metal material. The frame body part 220 is fixed by attaching the frame body body part 222 to the base part 210.

  The reflecting plate 230 is an annular frame-shaped (funnel-shaped) reflecting member having an inner surface reflecting function. The reflector 230 can be formed using a metal material such as aluminum. The reflector 230 may be formed of a hard white resin material instead of a metal material.

  The translucent panel 240 is a translucent member having light diffusibility and translucency. The translucent panel 240 is a flat plate disposed between the reflection plate 230 and the frame body portion 220, and is attached to the reflection plate 230. The translucent panel 240 can be formed in a disk shape with a transparent resin material such as acrylic and polycarbonate.

  Note that the lighting device 200 may not include the translucent panel 240. By not providing the translucent panel 240, the luminous flux of the light emitted from the lighting device 200 can be improved. The illuminating device 200 may include a lens for controlling light distribution instead of the translucent panel 240.

  As shown in FIG. 9, the lighting device 200 includes a lighting device 250 that supplies power to the light emitting device 10 to light the light emitting device 10, and AC power from a commercial power source to the lighting device 250. A relay terminal block 260 is connected. Specifically, the lighting device 250 converts AC power relayed from the terminal block 260 into DC power and outputs the DC power to the light emitting device 10.

  The lighting device 250 and the terminal block 260 are fixed to a mounting plate 270 provided separately from the instrument body. The mounting plate 270 is formed by bending a rectangular plate member made of a metal material. The lighting device 250 is fixed to the lower surface of one end portion in the longitudinal direction, and the terminal block 260 is mounted on the lower surface of the other end portion. Fixed. The mounting plate 270 is connected to a top plate 280 fixed to the upper part of the base 210 of the instrument body.

  As described above, the lighting device 200 includes the light emitting device 10 and the lighting device 250 that supplies the light emitting device 10 with power for lighting the light emitting device 10. In such an illumination device 200, the light extraction efficiency from the light emitting device 10 is improved. Note that the lighting device 200 may include a light emitting device 10a or a light emitting device 10b instead of the light emitting device 10.

  In the second embodiment, the downlight is exemplified as the lighting device, but the present invention may be realized as another lighting device such as a spotlight.

(Other embodiments)
Although the light-emitting device and the lighting device according to the embodiment have been described above, the present invention is not limited to the above-described embodiment.

  In the above embodiment, the light emitting device emits white light by a combination of an LED chip that emits blue light and a yellow phosphor, but the configuration for emitting white light is not limited thereto.

  For example, a wavelength conversion layer containing a red phosphor and a green phosphor and an LED chip that emits blue light may be combined. That is, the wavelength conversion layer may include a red phosphor and a green phosphor.

  Alternatively, an ultraviolet LED chip that emits ultraviolet light having a shorter wavelength than an LED chip that emits blue light, and a blue phosphor or green that emits blue light, red light, and green light when excited mainly by ultraviolet light. A phosphor and a red phosphor may be combined. That is, the LED chip may emit ultraviolet light. The wavelength conversion layer may include a blue phosphor, a green phosphor, and a red phosphor.

  Moreover, in the said embodiment, the LED chip was illustrated as a light emitting element used for a light-emitting device. However, other types of solid-state light-emitting elements such as semiconductor light-emitting elements such as semiconductor lasers or EL elements such as organic EL (Electro Luminescence) or inorganic EL may be employed as the light-emitting elements.

  In the light emitting device, two or more types of light emitting elements having different emission colors may be used. For example, the light emitting device may include an LED chip that emits red light in addition to an LED chip that emits blue light for the purpose of enhancing color rendering.

  The stacked structure shown in the cross-sectional view of the above embodiment is an example, and the present invention is not limited to the stacked structure. That is, the present invention also includes a stacked structure that can realize the characteristic functions of the present invention, as in the above-described stacked structure. For example, another layer may be provided between the layers of the stacked structure as long as the same function as the stacked structure can be realized.

  In the above embodiment, the main materials constituting each layer of the stacked structure are illustrated, but each layer of the stacked structure includes other materials as long as the same function as the stacked structure can be realized. Also good.

  In addition, it is realized by variously conceiving various modifications conceived by those skilled in the art for each embodiment, or by arbitrarily combining the components and functions in each embodiment without departing from the spirit of the present invention. This form is also included in the present invention.

10, 10a, 10b Light emitting device 11 Substrate 12 LED chip (light emitting element)
13 Air Layer 14, 14c Wavelength Conversion Material 14a, 14b Wavelength Conversion Layer 15 Reflective Material 200 Illumination Device

Claims (7)

A substrate,
A plurality of light emitting elements disposed on the substrate;
A wavelength conversion layer disposed on an upper surface of each of the plurality of light-emitting elements, including a phosphor, and a wavelength conversion layer having translucency,
A light emitting device is provided between the plurality of light emitting elements, wherein an air layer covering each side surface of the plurality of light emitting elements is provided. The light emitting device according to claim 1, wherein the wavelength conversion layer is not disposed above the air layer. The light-emitting device is a wavelength conversion material that covers the whole of the plurality of light-emitting elements, includes a phosphor, and includes a wavelength conversion material having translucency,
The light emitting device according to claim 1, wherein the wavelength conversion layer is a part of the wavelength conversion material. The side surface of the light emitting element positioned at the end in the arrangement of the plurality of light emitting elements that does not face the other light emitting elements is covered with a wavelength conversion layer that contains a phosphor and has translucency. The light-emitting device of any one of 1-3. Furthermore, a reflective material having light reflectivity that surrounds the plurality of light emitting elements from the side,
The light-emitting device according to claim 1, wherein a side surface of the light-emitting element positioned at an end portion of the plurality of light-emitting elements that is not opposed to another light-emitting element is covered with the reflective material. The light emitting device according to claim 1, wherein an interval between the plurality of light emitting elements is shorter than a width of one of the plurality of light emitting elements. The light emitting device according to any one of claims 1 to 6,
A lighting device comprising: a lighting device that supplies power for lighting the light emitting device to the light emitting device.

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