[go: up one dir, main page]

JP2017017003A - High frequency dielectric heating device - Google Patents

High frequency dielectric heating device Download PDF

Info

Publication number
JP2017017003A
JP2017017003A JP2016111797A JP2016111797A JP2017017003A JP 2017017003 A JP2017017003 A JP 2017017003A JP 2016111797 A JP2016111797 A JP 2016111797A JP 2016111797 A JP2016111797 A JP 2016111797A JP 2017017003 A JP2017017003 A JP 2017017003A
Authority
JP
Japan
Prior art keywords
frequency
capacitor
dielectric heating
power source
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016111797A
Other languages
Japanese (ja)
Other versions
JP6838290B2 (en
Inventor
友樹 丸山
Tomoki Maruyama
友樹 丸山
真司 山田
Shinji Yamada
真司 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Seikan Group Holdings Ltd
Original Assignee
Toyo Seikan Group Holdings Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Seikan Group Holdings Ltd filed Critical Toyo Seikan Group Holdings Ltd
Priority to KR1020237006581A priority Critical patent/KR20230035682A/en
Priority to PCT/JP2016/066624 priority patent/WO2017006673A1/en
Priority to KR1020177036357A priority patent/KR20180023904A/en
Publication of JP2017017003A publication Critical patent/JP2017017003A/en
Priority to US15/844,824 priority patent/US20180110098A1/en
Application granted granted Critical
Publication of JP6838290B2 publication Critical patent/JP6838290B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Control Of High-Frequency Heating Circuits (AREA)
  • Constitution Of High-Frequency Heating (AREA)

Abstract

【課題】装置コストの低減および装置構造の簡素化を図りつつ、インピーダンスの微調整を高精度かつ容易に達成する高周波誘電加熱装置を提供すること。【解決手段】高周波電源20と、対向して配置された一対の電極30と、電極30と高周波電源20との間に接続され被加熱物の加熱で生じる反射電力を検出する反射電力検出手段と、反射電力を調整するインピーダンス整合器40からなる高周波誘電加熱装置10であって、整合器40は、高周波電源20と並列に接続されたコンデンサC1と、電極30に直列に接続された少なくともリアクタンス調整可能なコンデンサC2またはコイルLの少なくとも一方を備え、高周波電源20は、周波数を可変に構成されている高周波誘電加熱装置10。【選択図】図1An object of the present invention is to provide a high-frequency dielectric heating apparatus that achieves fine adjustment of impedance with high precision and ease while reducing the apparatus cost and simplifying the apparatus structure. A high-frequency power source (20), a pair of electrodes (30) arranged facing each other, and a reflected power detection means connected between the electrodes (30) and the high-frequency power source (20) for detecting reflected power generated by heating of an object to be heated. , an impedance matching device 40 for adjusting the reflected power, the matching device 40 comprising a capacitor C1 connected in parallel with the high frequency power supply 20 and at least reactance adjustment connected in series with the electrode 30. A high-frequency dielectric heating device 10 comprising at least one of a possible capacitor C2 or a coil L, and a high-frequency power source 20 configured to be variable in frequency. [Selection drawing] Fig. 1

Description

本発明は、対向する電極の間に配置された被加熱物を高周波誘電加熱によって加熱する高周波誘電加熱装置に関し、特に、冷凍食材を高周波誘電加熱によって解凍する高周波誘電加熱装置に関する。   The present invention relates to a high-frequency dielectric heating device that heats an object to be heated disposed between opposing electrodes by high-frequency dielectric heating, and more particularly to a high-frequency dielectric heating device that defrosts frozen food by high-frequency dielectric heating.

従来、高周波誘電加熱によって被加熱物を加熱する高周波誘電加熱装置として、対向する電極の間に配置された被加熱物を高周波誘電加熱によって加熱する高周波誘電加熱装置が知られている(例えば、特許文献1を参照)。高周波誘電加熱とは、被加熱物(誘電体)に高周波電圧を印加し、被加熱物を構成する各分子の極性を高周波で変化させ、それに伴う分子の回転・衝突・振動・摩擦等に起因する内部発熱によって被加熱物を加熱する加熱方法のことである。   Conventionally, as a high-frequency dielectric heating apparatus that heats an object to be heated by high-frequency dielectric heating, a high-frequency dielectric heating apparatus that heats an object to be heated disposed between opposing electrodes by high-frequency dielectric heating is known (for example, a patent) Reference 1). High-frequency dielectric heating is caused by applying high-frequency voltage to the object to be heated (dielectric material), changing the polarity of each molecule constituting the object to be heated at high frequency, and accompanying rotation, collision, vibration, friction, etc. of the molecule. It is a heating method for heating an object to be heated by internal heat generation.

被加熱物を配した電極インピーダンスは、被加熱物の形状、種類、加熱又は解凍温度によって大きく変化する。このとき、高周波電源の出力インピーダンスと被加熱物を配した電極インピーダンスに差がある状態、すなわちインピーダンス整合されていない状態では、反射電力が生じ、加熱又は解凍効率の低下、回路素子の破壊や劣化に至ることがある。
これを防ぐために、電力増幅回路と電極の間に整合器が挿入されており、その構成要素である、例えば、コンデンサやコイルを設けることでインピーダンス整合を維持するようになっている。
The electrode impedance of the object to be heated varies greatly depending on the shape, type, heating or thawing temperature of the object to be heated. At this time, when there is a difference between the output impedance of the high-frequency power supply and the electrode impedance of the object to be heated, that is, the impedance is not matched, reflected power is generated, the heating or thawing efficiency is lowered, and the circuit element is destroyed or deteriorated. May lead to.
In order to prevent this, a matching device is inserted between the power amplifier circuit and the electrode, and impedance matching is maintained by providing, for example, a capacitor or a coil as its constituent elements.

一般的に、高周波誘電加熱により食材等の被加熱物を加熱や解凍する際には、構造がシンプルで回路素子の耐熱温度が高く、反射電力耐性に優れた真空管式高周波電源が用いられている。しかし、真空管式高周波電源は、電力増幅の特性上、大型であり、共振周波数が被加熱物を配した電極インピーダンスによって任意に変化してしまうといった課題がある。特に、電源周波数は、様々な形状を有する食材を加熱又は解凍する際の均一性(電力半減深度)に影響するため、共振周波数がその時々の状況で任意に変化することは好ましくない。また、電波法における周波数規定を遵守するためにも、所定の周波数変動幅に収めることが好ましい。   Generally, when heating or thawing an object to be heated such as food by high frequency dielectric heating, a vacuum tube type high frequency power source having a simple structure, a high temperature resistance of circuit elements, and excellent resistance to reflected power is used. . However, the vacuum tube type high-frequency power source is large in terms of power amplification characteristics, and there is a problem that the resonance frequency arbitrarily changes depending on the electrode impedance on which the object to be heated is arranged. In particular, since the power frequency affects the uniformity (power half depth) when heating or thawing foods having various shapes, it is not preferable that the resonance frequency changes arbitrarily in each situation. Further, in order to comply with the frequency regulations in the Radio Law, it is preferable to keep within a predetermined frequency fluctuation range.

一方、半導体を高速スイッチング制御することにより電力増幅をおこなう半導体式高周波電源は、高分解能な自動整合器と組み合わせることにより、システムとして小型、高効率を特徴とし、従来からプラズマ放電等の用途に用いられてきた。
整合器の構成要素である可変コンデンサや可変コイルの値を逐次変化させることでインピーダンス整合状態を維持するようになっているが、負荷が食材のように大容量であり、その形状、種類、温度によって電極インピーダンスが大きく変化する場合、整合状態を維持するためには大きなインピーダンス調整幅をコンデンサやコイルに持たせる必要があり、その結果、整合器が大型でありコストが高くなるといった問題が生じる。
On the other hand, a semiconductor high-frequency power source that performs power amplification by controlling high-speed switching of a semiconductor is characterized by its small size and high efficiency as a system when combined with a high-resolution automatic matching unit, and has been used for applications such as plasma discharge. Has been.
The impedance matching state is maintained by sequentially changing the values of the variable capacitors and variable coils, which are the components of the matching unit, but the load is large like food, and its shape, type, and temperature When the electrode impedance changes greatly due to the above, it is necessary to provide the capacitor or coil with a large impedance adjustment width in order to maintain the matching state. As a result, there arises a problem that the matching unit is large and the cost is high.

整合器大型化の問題を回避する高周波誘電加熱装置として、整合回路が、可変コイルとコンデンサを有し、切り替え手段によりコンデンサの容量を増加させることが可能な高周波誘電加熱装置が知られている(例えば、特許文献2を参照)。   As a high-frequency dielectric heating device that avoids the problem of an increase in the size of the matching device, a high-frequency dielectric heating device is known in which the matching circuit has a variable coil and a capacitor, and the capacity of the capacitor can be increased by switching means ( For example, see Patent Document 2).

特許文献2に記載の高周波誘電加熱装置では、高周波電源に反射する電力を反射電力検知手段によって検知し、反射電力検知手段の検出信号を基に、可変コイルとコンデンサの値を適宜組み合わせて、インピーダンスの整合を図り、反射電力を最小に維持する。   In the high frequency dielectric heating device described in Patent Document 2, the power reflected by the high frequency power source is detected by the reflected power detection means, and the values of the variable coil and the capacitor are appropriately combined based on the detection signal of the reflected power detection means, and the impedance To maintain the reflected power to a minimum.

特開平08−255682号公報Japanese Patent Application Laid-Open No. 08-255682 特開2005−56781号公報JP 2005-56781 A

特許文献2に記載の高周波誘電加熱装置では、コンデンサやコイルの容量を変化させることでインピーダンス調整を図るように構成されているが、特に、食材の解凍のようにインピーダンスの変化が大きい場合、結局、コイルやコンデンサによるインピーダンス調整幅を大きくする必要があり、整合器の小型化を図ることができない。   The high-frequency dielectric heating device described in Patent Document 2 is configured to adjust the impedance by changing the capacitance of the capacitor or the coil. Therefore, it is necessary to increase the impedance adjustment width by the coil or the capacitor, and the matching unit cannot be reduced in size.

そこで、本発明は、これらの問題点を解決するものであり、食材の形状、種類、加熱又は解凍温度など電極インピーダンスの変化に応じて、逐次インピーダンス整合をおこなうことにより、高周波電源の発振効率を向上し、電源の小型化を図る。更に、電源周波数を所定の範囲で可変に構成させることにより、インピーダンス調整機能を担わせ、整合器の簡素化、小型化を図る。このように、小型、安価であり、様々な食材に対して高品質な加熱又は解凍が可能な高周波誘電加熱装置を提供することを目的とするものである。   Therefore, the present invention solves these problems, and by performing sequential impedance matching according to changes in electrode impedance such as the shape, type of food, heating or thawing temperature, the oscillation efficiency of the high frequency power supply is improved. Improve and reduce the size of the power supply. Furthermore, by making the power supply frequency variable within a predetermined range, an impedance adjustment function is provided, and the matching unit is simplified and miniaturized. Thus, it is an object of the present invention to provide a high-frequency dielectric heating apparatus that is small and inexpensive and capable of high-quality heating or thawing with respect to various foods.

本発明は、高周波電源と、対向して配置された一対の電極と、前記電極と高周波電源との間に接続され被加熱物の加熱で生じる反射電力を検出する反射電力検出手段と、反射電力を調整するインピーダンス整合器からなる高周波誘電加熱装置であって、前記整合器は、前記高周波電源と並列に接続されたコンデンサと、前記電極に直列に接続された少なくともリアクタンス調整可能なコンデンサまたはコイルの少なくとも一方を備え、前記高周波電源は、周波数を可変に構成されていることにより、前記課題を解決するものである。   The present invention relates to a high-frequency power source, a pair of electrodes arranged opposite to each other, a reflected power detecting means connected between the electrode and the high-frequency power source to detect a reflected power generated by heating of an object to be heated, and a reflected power A high-frequency dielectric heating device comprising an impedance matching device for adjusting a capacitor, the matching device comprising: a capacitor connected in parallel with the high-frequency power source; and a capacitor or a coil capable of at least reactance adjustment connected in series to the electrode. At least one is provided, and the high-frequency power source is configured to have a variable frequency, thereby solving the problem.

本請求項1に係る発明によれば、被加熱物の加熱又は解凍で生じる反射電力を反射電力検出手段で検出し、逐次インピーダンス整合をおこなうことにより高周波電源の発振効率を向上させ、電源の小型化が図れる。また、インピーダンス整合器が、高周波電源と並列に接続されたコンデンサと、電極に直列に接続された少なくともリアクタンス調整可能なコンデンサまたはコイルの少なくとも一方を備え、高周波電源が周波数を可変に構成されていることにより、電源の周波数を変化させることで、電極に直列に接続されたコンデンサまたはコイルの少なくとも一方のリアクタンスを高分解能に調整することが可能であり、整合器の簡素化、小型化を図りつつ、インピーダンス調整を高精度かつ容易に達成することができる。   According to the first aspect of the present invention, the reflected power generated by heating or thawing of the object to be heated is detected by the reflected power detection means, and the impedance matching is performed successively, thereby improving the oscillation efficiency of the high frequency power supply and reducing the size of the power supply. Can be achieved. The impedance matching unit includes at least one of a capacitor connected in parallel with the high-frequency power source and at least one of a capacitor or a coil connected in series with the electrode and capable of adjusting the reactance, and the high-frequency power source is configured to have a variable frequency. Thus, by changing the frequency of the power supply, it is possible to adjust the reactance of at least one of the capacitor or the coil connected in series with the electrode with high resolution, while simplifying and downsizing the matching unit. Impedance adjustment can be achieved with high accuracy and ease.

本請求項2に係る発明によれば、高周波電源として半導体式高周波電源を用いることによって、高効率、小型軽量、低コストという効果を享受しつつも、応答性に優れたインピーダンス整合可能であり、電源の損傷を俊敏かつ良好に抑制することができる。
本請求項3に係る発明によれば、整合器が、高周波電源と並列に接続されたコンデンサまたは電極と直列に接続されたコンデンサの少なくとも一方の容量を多段切り替えもしくは連続変化させる可変手段を備えることにより、電源の周波数を変化させたことによるリアクタンス調整幅を、電極インピーダンス近傍に設定することが可能であり、インピーダンス整合による反射電力の抑制をより短時間におこなうことができる。また、高周波電源の周波数可変幅を小さく設定することができるため、整合器の簡素化、小型化を図りながらも、食材の加熱や解凍品質を常に良好に保つことができる。
本請求項4に係る発明によれば、整合器が電極と並列に接続されたコンデンサを有することにより、加熱又は解凍に伴う電極インピーダンスの変化率を小さくすることが可能である。その結果、高周波電源の周波数可変幅を小さく設定することができるため、整合器の簡素化、小型化を図りながらも、食材の加熱や解凍品質を常に良好に保つことができる。
特に、高効率解凍を目的とし電極を食材や食品包装体に接触又は形状追従させる場合など、解凍に伴う電極インピーダンスの変化率が大きい場合に有効である。
本請求項5に係る発明によれば、整合器のインピーダンス情報出力部から食材インピーダンスの正確な情報を簡単に得ることが可能になり、対象とする被加熱物に絞り込んだ整合器のパラメータを設定したり、その結果に基づき整合器の簡素化を図ることができる。
According to the invention of claim 2, by using a semiconductor high-frequency power supply as a high-frequency power supply, impedance matching with excellent responsiveness can be achieved while enjoying the effects of high efficiency, small size and light weight, and low cost. Damage to the power supply can be quickly and satisfactorily suppressed.
According to the third aspect of the present invention, the matching device includes variable means for switching or continuously changing the capacity of at least one of a capacitor connected in parallel with the high-frequency power source or a capacitor connected in series with the electrode. Thus, it is possible to set the reactance adjustment width by changing the frequency of the power supply in the vicinity of the electrode impedance, and it is possible to suppress the reflected power by impedance matching in a shorter time. In addition, since the frequency variable width of the high frequency power supply can be set small, the heating and thawing quality of the food can always be kept good while simplifying and downsizing the matching unit.
According to the fourth aspect of the present invention, since the matching device includes the capacitor connected in parallel with the electrode, it is possible to reduce the rate of change of the electrode impedance accompanying heating or thawing. As a result, since the frequency variable width of the high frequency power supply can be set small, the heating and thawing quality of the food can always be kept good while simplifying and downsizing the matching unit.
This is particularly effective when the rate of change in electrode impedance associated with thawing is large, such as when the electrode is brought into contact with or in accordance with the shape of a food or food package for the purpose of high-efficiency thawing.
According to the invention of claim 5, it is possible to easily obtain accurate information on the food impedance from the impedance information output unit of the matching unit, and set parameters of the matching unit narrowed down to the object to be heated. Or the matching unit can be simplified based on the result.

本発明の一実施形態に係る高周波誘電加熱装置を示す回路図。The circuit diagram which shows the high frequency dielectric heating apparatus which concerns on one Embodiment of this invention. 第3コンデンサを設けない場合および設けた場合の第2コンデンサの変化量を示す表。The table | surface which shows the variation | change_quantity of the 2nd capacitor when not providing a 3rd capacitor and when providing. 実験例における周波数および反射率の測定結果を示すグラフ。The graph which shows the measurement result of the frequency and reflectance in an experiment example.

以下に、本発明の一実施形態に係る高周波誘電加熱装置10について、図面に基づいて説明する。   Below, the high frequency dielectric heating apparatus 10 which concerns on one Embodiment of this invention is demonstrated based on drawing.

高周波誘電加熱装置10は、図1に示すように、高周波電源20と、一対の電極30と、電極30と高周波電源20との間に接続され高周波電源20とインピーダンス整合をとる整合器40と、高周波電源20に反射する電力を検知する反射電力検知部(図示しない)と、各部を制御する制御部(図示しない)とを備え、対向配置された一対の電極30間に配置された冷凍食材を高周波誘電加熱によって解凍するものである。   As shown in FIG. 1, the high-frequency dielectric heating device 10 includes a high-frequency power source 20, a pair of electrodes 30, a matching unit 40 connected between the electrode 30 and the high-frequency power source 20 and impedance matching with the high-frequency power source 20, A reflected power detector (not shown) that detects power reflected to the high-frequency power source 20 and a controller (not shown) that controls each part, and a frozen food disposed between a pair of opposed electrodes 30 are provided. Thawing by high frequency dielectric heating.

高周波電源20は、周波数を可変に構成された可変周波数半導体式高周波電源として構成されている。また、高周波電源20は、反射電力検知部によって検知された反射率が所定の閾値を超えると保護機能により高周波出力を抑制又は停止するように構成されている。   The high frequency power source 20 is configured as a variable frequency semiconductor high frequency power source having a variable frequency. The high frequency power supply 20 is configured to suppress or stop the high frequency output by a protection function when the reflectance detected by the reflected power detection unit exceeds a predetermined threshold.

整合器40は、図1に示すように、電極30に直列に接続されたリアクタンス回路50と、リアクタンス回路50と高周波電源20との間で電極30と並列に接続された第1コンデンサC1と、電極30とリアクタンス回路50との間で電極30と並列に接続された第3コンデンサC3とを含んでいる。   As shown in FIG. 1, the matching unit 40 includes a reactance circuit 50 connected in series to the electrode 30, a first capacitor C <b> 1 connected in parallel with the electrode 30 between the reactance circuit 50 and the high-frequency power source 20, and A third capacitor C <b> 3 connected in parallel with the electrode 30 is included between the electrode 30 and the reactance circuit 50.

リアクタンス回路50は、電極30に直列に接続された少なくとも1つのリアクタンス素子を含むものであり、本実施形態では、図1に示すように、高周波電源20に直列に接続された第2コンデンサC2およびコイルLを備えている。   The reactance circuit 50 includes at least one reactance element connected in series to the electrode 30. In the present embodiment, as shown in FIG. 1, the second capacitor C2 connected in series to the high-frequency power source 20 and A coil L is provided.

図2は、高周波電源の周波数を13.56MHz、第1コンデンサC1の容量を1500pF、コイルLのインダクタンスを1.8μHとし、各種食材の解凍をおこない、反射電力検知部による反射電力が常に最小になるように、第2コンデンサC2の容量調整をおこなったときの値(容量%)を示したものである。
図2から分かる通り、第3コンデンサC3を配置しなかった場合では、食材の種類や個数によって、解凍開始での第2コンデンサC2の容量%はそれぞれ異なり、更に、解凍終了で第2コンデンサC2の容量%は大きく減少方向に変化している。
第3コンデンサC3を配置した場合では、解凍開始、解凍終了での食材の種類や個数による第2コンデンサC2の容量%の変化は小さい。この結果から、第3コンデンサC3を配置することにより、食材解凍に伴う電極インピーダンスの変化率を小さくすることが可能であり、高周波電源20の周波数可変幅を小さく設定することができる。
FIG. 2 shows that the frequency of the high frequency power supply is 13.56 MHz, the capacitance of the first capacitor C1 is 1500 pF, the inductance of the coil L is 1.8 μH, various foods are thawed, and the reflected power by the reflected power detection unit is always minimized. Thus, the value (capacity%) when the capacity of the second capacitor C2 is adjusted is shown.
As can be seen from FIG. 2, in the case where the third capacitor C3 is not disposed, the capacity% of the second capacitor C2 at the start of thawing differs depending on the type and number of ingredients, and further, the second capacitor C2 at the end of thawing. The capacity% is greatly decreasing.
When the third capacitor C3 is disposed, the change in the capacitance% of the second capacitor C2 due to the type and number of ingredients at the start and end of thawing is small. From this result, by disposing the third capacitor C3, it is possible to reduce the rate of change of the electrode impedance accompanying the thawing of the ingredients, and the frequency variable width of the high frequency power source 20 can be set small.

整合器40は、高周波電源20と並列に接続された第1コンデンサC1の容量を多段切り替えもしくは連続変化させる、リレー等の接点手段から成る可変手段(図示しない)もしくはバリコン等を備えている。
なお、可変手段の具体的態様については、上記に限定されず、第1コンデンサC1の容量を多段切り替えもしくは連続変化させるものであれば如何なるものでもよく、また、可変手段によって、電極30と直列に接続されたコンデンサの容量を多段切り替えもしくは連続変化させてもよい。
The matching unit 40 includes variable means (not shown) including a contact means such as a relay, a variable condenser, or the like that switches or continuously changes the capacity of the first capacitor C1 connected in parallel with the high-frequency power source 20.
The specific mode of the variable means is not limited to the above, and any means may be used as long as the capacity of the first capacitor C1 is switched or continuously changed in multiple stages, and the variable means is connected in series with the electrode 30. The capacitance of the connected capacitor may be switched in multiple stages or continuously changed.

制御部は、反射電力検知部によって検知された反射率を基に、被加熱物の解凍状態に応じて、第1コンデンサC1の容量を減少方向に切り替えるとともに、高周波電源20の周波数を調整し、インピーダンス整合を図るように設計されている。   Based on the reflectance detected by the reflected power detection unit, the control unit switches the capacity of the first capacitor C1 in a decreasing direction according to the thawing state of the object to be heated, and adjusts the frequency of the high-frequency power source 20, Designed for impedance matching.

以下に、本発明の実験例について説明する。   Hereinafter, experimental examples of the present invention will be described.

本実験例では、リアクタンス回路50の第2コンデンサC2の容量を93pF、コイルLのインダクタンスを1.8μHとし、リアクタンス回路50のインピーダンス調整を、高周波電源20の周波数を調整することで行った。また、第3コンデンサC3の容量を400pFとした。また、高周波電源20は、反射電力検知部によって検知された反射率が40%を超えると保護機能により高周波出力が停止するように構成されている。また、一対の電極30間に配置される被解凍物(被加熱物)としては、冷凍柿(4個)を用いた。   In this experimental example, the capacitance of the second capacitor C2 of the reactance circuit 50 is 93 pF, the inductance of the coil L is 1.8 μH, and the impedance of the reactance circuit 50 is adjusted by adjusting the frequency of the high-frequency power supply 20. The capacitance of the third capacitor C3 is 400 pF. The high frequency power supply 20 is configured such that the high frequency output is stopped by the protection function when the reflectance detected by the reflected power detection unit exceeds 40%. In addition, as the objects to be thawed (objects to be heated) disposed between the pair of electrodes 30, four freezers were used.

図3は、解凍開始後、1分毎に周波数と反射率を測定した結果である。   FIG. 3 shows the results of measuring the frequency and reflectance every minute after the start of thawing.

解凍に伴う整合調整をしない場合として、第1コンデンサC1の容量を1500pFに設定し、高周波電源20の周波数を13.56MHzに固定して解凍を行った場合、3分程度で反射率が閾値(40%)を超え、高周波電源20の高周波発振が停止し、解凍が中断された。   In the case where the matching adjustment is not performed in accordance with the decompression, when the capacitance of the first capacitor C1 is set to 1500 pF and the frequency of the high frequency power supply 20 is fixed to 13.56 MHz, the reflectivity reaches the threshold value in about 3 minutes. 40%), high-frequency oscillation of the high-frequency power source 20 was stopped, and thawing was interrupted.

また、第1コンデンサC1の容量の切り替え、および、高周波電源20の周波数を調整することによるリアクタンス回路50のインピーダンス調整を行った場合、第1コンデンサC1の容量を1500pFに設定して解凍を開始すると、解凍に伴い周波数が変化(13.53MHz→13.48MHz)することで反射率が閾値(40%)に達するまで7分かかり、周波数調整しない場合に比べて反射が閾値に到達するまでの時間を長くすることができた。
反射率が閾値に達したところで第1コンデンサC1の容量を1270pFに切り替えることで、反射率が約15%に低減し、同時に、周波数は変化(13.48MHz→13.55MHz)し、解凍開始時の周波数13.53MHzまでほぼ回復した。同様に、第1コンデンサC1の容量を1030pF、970pF、880pFと反射率に応じ適宜減少方向に切り替えることで、反射率を閾値以下に維持した状態で高周波印加が可能となり、解凍終了した。
Further, when the impedance of the reactance circuit 50 is adjusted by switching the capacity of the first capacitor C1 and adjusting the frequency of the high frequency power supply 20, the capacity of the first capacitor C1 is set to 1500 pF and defrosting is started. , It takes 7 minutes for the reflectivity to reach the threshold (40%) because the frequency changes with decompression (13.53 MHz → 13.48 MHz), and the time it takes for the reflection to reach the threshold compared to when the frequency is not adjusted. It was possible to lengthen.
When the reflectivity reaches the threshold value, the capacitance of the first capacitor C1 is switched to 1270 pF, so that the reflectivity is reduced to about 15%, and at the same time, the frequency changes (13.48 MHz → 13.55 MHz). The frequency almost recovered to 13.53 MHz. Similarly, by switching the capacitance of the first capacitor C1 to 1030 pF, 970 pF, and 880 pF as appropriate according to the reflectance, high-frequency application was possible while maintaining the reflectance below the threshold, and thawing was completed.

以上より、高周波誘電加熱装置10は、高周波電源20の周波数を可変調整することによるリアクタンス回路50のインピーダンス調整と、整合器40にリレー等の多段切り替えによって安価にインピーダンス整合を図ることができることが確認された。更に、整合器40におけるコンデンサ容量調整にバリコンを用いることにより、より高精度なインピーダンス調整を容易に達成することも可能である。また、高周波電源20の周波数を可変調整する際、整合器40におけるコンデンサ容量調整を併用することで、周波数可変幅を小さくすることが可能である。   From the above, it is confirmed that the high-frequency dielectric heating device 10 can achieve impedance matching at low cost by adjusting the impedance of the reactance circuit 50 by variably adjusting the frequency of the high-frequency power source 20 and switching the matching unit 40 with multiple stages such as relays. It was done. Furthermore, by using a variable capacitor for adjusting the capacitor capacity in the matching unit 40, it is possible to easily achieve more accurate impedance adjustment. Further, when the frequency of the high frequency power supply 20 is variably adjusted, the frequency variable width can be reduced by using the capacitor capacity adjustment in the matching unit 40 together.

以上、本発明の実施形態を詳述したが、本発明は上記実施形態に限定されるものではなく、特許請求の範囲に記載された本発明を逸脱することなく種々の設計変更を行なうことが可能である。   As mentioned above, although embodiment of this invention was explained in full detail, this invention is not limited to the said embodiment, A various design change can be performed without deviating from this invention described in the claim. Is possible.

例えば、上述した実施形態では、高周波誘電加熱装置が、冷凍食材を高周波誘電加熱によって解凍するものとして説明したが、高周波誘電加熱装置の用途は、被加熱物を加熱するものであればよく、冷凍食材の解凍に限定されない。   For example, in the above-described embodiment, the high-frequency dielectric heating device has been described as thawing frozen food by high-frequency dielectric heating, but the high-frequency dielectric heating device may be used for heating an object to be heated, It is not limited to thawing ingredients.

また、上述した実施形態に加えて、整合器のインピーダンス情報(例えば、第1コンデンサの状態など)を監視モニタなどに出力するインピーダンス情報出力部を設けてもよい。この場合、整合器のインピーダンス情報出力部から食材インピーダンスの正確な情報を簡単に得ることが可能になり、対象とする被加熱物に絞り込んだ整合器のパラメータを設定したり、その結果に基づき整合器の簡素化を図ることができる。   In addition to the above-described embodiment, an impedance information output unit that outputs impedance information (for example, the state of the first capacitor) of the matching unit to a monitoring monitor or the like may be provided. In this case, it is possible to easily obtain accurate information on food impedance from the impedance information output unit of the matcher, and set the matcher parameters narrowed down to the object to be heated and match based on the result. The device can be simplified.

本発明の半導体式高周波誘電加熱装置は、冷凍食品等の急速解凍に好適であるばかりでなく、工業用の誘電加熱装置としても広く適用でき、また、家庭用または業務用の卓上型解凍装置(電子レンジ)や冷蔵庫等に組み込んで用いることもできる等、産業上の利用可能性が高い。   The semiconductor type high frequency dielectric heating device of the present invention is not only suitable for rapid thawing of frozen foods etc., but can also be widely applied as an industrial dielectric heating device. Industrial applicability is high, for example, it can be incorporated into a microwave oven or refrigerator.

10 ・・・ 高周波誘電加熱装置
20 ・・・ 高周波電源
30 ・・・ 電極
40 ・・・ 整合器
50 ・・・ リアクタンス回路
C1 ・・・ 第1コンデンサ
C2 ・・・ 第2コンデンサ
C3 ・・・ 第3コンデンサ
L ・・・ コイル
DESCRIPTION OF SYMBOLS 10 ... High frequency dielectric heating apparatus 20 ... High frequency power supply 30 ... Electrode 40 ... Matching device 50 ... Reactance circuit C1 ... First capacitor C2 ... Second capacitor C3 ... First 3 capacitors L ... Coil

Claims (5)

高周波電源と、対向して配置された一対の電極と、前記電極と高周波電源との間に接続され被加熱物の加熱で生じる反射電力を検出する反射電力検出手段と、反射電力を調整するインピーダンス整合器からなる高周波誘電加熱装置であって、
前記整合器は、前記高周波電源と並列に接続されたコンデンサと、前記電極に直列に接続された少なくともリアクタンス調整可能なコンデンサまたはコイルの少なくとも一方を備え、前記高周波電源は、周波数を可変に構成されていることを特徴とする高周波誘電加熱装置。
A high-frequency power source, a pair of electrodes arranged opposite to each other, a reflected power detecting means connected between the electrode and the high-frequency power source for detecting reflected power generated by heating the object to be heated, and an impedance for adjusting the reflected power A high-frequency dielectric heating device comprising a matching unit,
The matching unit includes at least one of a capacitor connected in parallel to the high-frequency power source and a capacitor or a coil capable of adjusting at least reactance connected in series to the electrode, and the high-frequency power source is configured to have a variable frequency. A high-frequency dielectric heating device characterized by comprising:
前記高周波電源は、半導体式高周波電源であることを特徴とする請求項1に記載の高周波誘電加熱装置。   The high frequency dielectric heating apparatus according to claim 1, wherein the high frequency power supply is a semiconductor high frequency power supply. 前記整合器は、前記高周波電源と並列に接続されたコンデンサまたは前記電極と直列に接続されたコンデンサの少なくとも一方の容量を多段切り替えもしくは連続変化させる可変手段を備えることを特徴とする請求項1または請求項2に記載の高周波誘電加熱装置。   The matching unit includes variable means for switching or continuously changing at least one of the capacitance of a capacitor connected in parallel with the high-frequency power source or a capacitor connected in series with the electrode. The high frequency dielectric heating apparatus according to claim 2. 前記整合器は、前記電極と並列に接続されたコンデンサを有することを特徴とする請求項1乃至請求項3のいずれかに記載の高周波誘電加熱装置。   The high-frequency dielectric heating device according to any one of claims 1 to 3, wherein the matching unit includes a capacitor connected in parallel with the electrode. 前記高周波誘電加熱装置に整合器のインピーダンス情報を出力するインピーダンス情報出力部を備える請求項1乃至請求項4のいずれかに記載の高周波誘電加熱装置。   The high frequency dielectric heating apparatus according to any one of claims 1 to 4, further comprising an impedance information output unit that outputs impedance information of a matching unit to the high frequency dielectric heating apparatus.
JP2016111797A 2015-07-03 2016-06-03 High frequency dielectric heating device Active JP6838290B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020237006581A KR20230035682A (en) 2015-07-03 2016-06-03 High-frequency dielectric heating device
PCT/JP2016/066624 WO2017006673A1 (en) 2015-07-03 2016-06-03 High-frequency dielectric heating device
KR1020177036357A KR20180023904A (en) 2015-07-03 2016-06-03 High frequency dielectric heating device
US15/844,824 US20180110098A1 (en) 2015-07-03 2017-12-18 High-frequency dielectric heating device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015134646 2015-07-03
JP2015134646 2015-07-03

Publications (2)

Publication Number Publication Date
JP2017017003A true JP2017017003A (en) 2017-01-19
JP6838290B2 JP6838290B2 (en) 2021-03-03

Family

ID=57828283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016111797A Active JP6838290B2 (en) 2015-07-03 2016-06-03 High frequency dielectric heating device

Country Status (1)

Country Link
JP (1) JP6838290B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019114519A (en) * 2017-12-20 2019-07-11 エヌエックスピー ユーエスエイ インコーポレイテッドNXP USA,Inc. Defrosting apparatus and method of operation thereof
JP2021118084A (en) * 2020-01-24 2021-08-10 シャープ福山セミコンダクター株式会社 Control device, high frequency heating device and control method of control device
JP2022161100A (en) * 2021-04-08 2022-10-21 日立グローバルライフソリューションズ株式会社 High frequency decompression device
US11570857B2 (en) 2018-03-29 2023-01-31 Nxp Usa, Inc. Thermal increase system and methods of operation thereof
US11632829B2 (en) 2016-08-05 2023-04-18 Nxp Usa, Inc. Apparatus and methods for detecting defrosting operation completion
US11800608B2 (en) 2018-09-14 2023-10-24 Nxp Usa, Inc. Defrosting apparatus with arc detection and methods of operation thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56102096A (en) * 1980-01-16 1981-08-15 Matsushita Electric Industrial Co Ltd High frequency heater
JPS58107161A (en) * 1981-12-16 1983-06-25 Matsushita Electric Ind Co Ltd High-frequency thawing machine
JP2001251863A (en) * 2000-03-07 2001-09-14 Meidensha Corp Semiconductor-type high-frequency power supply
JP2005056781A (en) * 2003-08-07 2005-03-03 Matsushita Electric Ind Co Ltd High frequency heating device
WO2012169337A1 (en) * 2011-06-06 2012-12-13 三菱電機株式会社 High-frequency power source generation device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56102096A (en) * 1980-01-16 1981-08-15 Matsushita Electric Industrial Co Ltd High frequency heater
JPS58107161A (en) * 1981-12-16 1983-06-25 Matsushita Electric Ind Co Ltd High-frequency thawing machine
JP2001251863A (en) * 2000-03-07 2001-09-14 Meidensha Corp Semiconductor-type high-frequency power supply
JP2005056781A (en) * 2003-08-07 2005-03-03 Matsushita Electric Ind Co Ltd High frequency heating device
WO2012169337A1 (en) * 2011-06-06 2012-12-13 三菱電機株式会社 High-frequency power source generation device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11632829B2 (en) 2016-08-05 2023-04-18 Nxp Usa, Inc. Apparatus and methods for detecting defrosting operation completion
JP2019114519A (en) * 2017-12-20 2019-07-11 エヌエックスピー ユーエスエイ インコーポレイテッドNXP USA,Inc. Defrosting apparatus and method of operation thereof
JP7204344B2 (en) 2017-12-20 2023-01-16 エヌエックスピー ユーエスエイ インコーポレイテッド Decompression device and method of operation
US11570857B2 (en) 2018-03-29 2023-01-31 Nxp Usa, Inc. Thermal increase system and methods of operation thereof
US11800608B2 (en) 2018-09-14 2023-10-24 Nxp Usa, Inc. Defrosting apparatus with arc detection and methods of operation thereof
JP2021118084A (en) * 2020-01-24 2021-08-10 シャープ福山セミコンダクター株式会社 Control device, high frequency heating device and control method of control device
JP7377726B2 (en) 2020-01-24 2023-11-10 シャープセミコンダクターイノベーション株式会社 Control device, high frequency heating device, and control method for the control device
JP2022161100A (en) * 2021-04-08 2022-10-21 日立グローバルライフソリューションズ株式会社 High frequency decompression device
JP7579740B2 (en) 2021-04-08 2024-11-08 日立グローバルライフソリューションズ株式会社 High Frequency Defrosting Device

Also Published As

Publication number Publication date
JP6838290B2 (en) 2021-03-03

Similar Documents

Publication Publication Date Title
CN107710869B (en) High frequency induction heating device
JP6838290B2 (en) High frequency dielectric heating device
WO2017006673A1 (en) High-frequency dielectric heating device
JP6998668B2 (en) Decompression device with centralized inductive matching network and its operation method
KR102196228B1 (en) Apparatus and methods for defrosting operations in an rf heating system
JP6619818B2 (en) Impedance matching method and apparatus for pulse high frequency power supply
US10734196B2 (en) Impedance matching device
JP6998669B2 (en) Devices and methods for detecting the completion of the decompression operation
WO2017017407A1 (en) Radio frequency heating system
US10818477B2 (en) Impedance matching between loads and power generators
EP3500066B1 (en) Radio frequency heating and defrosting apparatus with in-cavity shunt capacitor
JP2005056781A (en) High frequency heating device
CN104349567A (en) Radio frequency power supply system and a method for performing impedance matching by utilizing radio frequency power supply system
KR20190056992A (en) Rf heating system with phase detection for impedance network tuning
CN111657418A (en) High-frequency thawing device
JP2021005459A (en) Dielectric heating system
KR101930440B1 (en) Apparatus of supplying power for generating plasma
JP3640621B2 (en) Dielectric heating device
JP6838291B2 (en) Semiconductor type high frequency dielectric heating device
JP7369096B2 (en) dielectric heating system
JP7579740B2 (en) High Frequency Defrosting Device
JP2004340471A (en) High frequency heating equipment
CN113676155A (en) Dual-chamber thawing device with impedance matching network and method of operation
JP2004253210A (en) High frequency heating equipment
WO2020111214A1 (en) High-frequency heating apparatus

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190517

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200616

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20200701

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200813

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210112

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210125

R150 Certificate of patent or registration of utility model

Ref document number: 6838290

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150