JP2017005073A - Manufacturing method of electronic device - Google Patents

Abstract

An electronic device manufacturing method capable of manufacturing an electronic device formed by integrating a plurality of chips without causing deterioration in quality or yield is provided. A step of attaching one surface of a first electronic element and one surface of a second electronic element to a support member, and forming a conductive material layer on the other surface of the first electronic element. A step of forming a conductive material layer on the other surface of the second electronic element; a conductive material layer formed on the other surface of the first electronic element; and a second surface of the second electronic element. A step of covering the formed conductive material layer with a resin; a conductive material layer formed on the other surface of the first electronic element; and a conductive material formed on the other surface of the second electronic element. Removing the layer until the layer is exposed, and connecting the metal plate to the exposed conductive material layer on the other surface of the first electronic element and the conductive material layer on the other surface of the second electronic element, Electrically connecting the conductive material layer and the metal plate. To solve the above problems by a method of manufacturing an electronic device. [Selection] Figure 7

Description

  The present invention relates to an electronic device manufacturing method.

  An electronic device such as a power amplifier has a function of amplifying a signal and is used for a transmission unit of a wireless communication device. In a conventional power amplifier, for example, a semiconductor chip in which a transistor or the like is formed on a semiconductor substrate and a chip in which a matching circuit is formed on a ceramic substrate or the like are arranged close to each other, and electrodes on each chip are connected to each other. There exists a thing of the structure connected by the wire (for example, patent document 1). However, in the power amplifier having such a structure, the electrical characteristics of the power amplifier may change due to chip position deviation or wire length variation, which may lead to a decrease in yield.

  In the case of a power amplifier having a structure in which all of the transistors and the matching circuit are integrated on one semiconductor substrate, the above-described problems such as misalignment do not occur. However, it is not preferable that the semiconductor substrate used is an expensive substrate such as a GaN substrate because the cost is increased by an increase in the area where the semiconductor substrate is used.

  For this reason, a method for integrating a plurality of chips has been studied. For example, there is a rewiring technique as a technique for integrating a plurality of chips (for example, Patent Document 2).

Japanese Patent No. 3888785 JP 2013-38306 A JP 2006-270037 A Japanese Patent Application Laid-Open No. 07-7134

  By the way, when a plurality of chips are integrated by the rewiring technique, there is a variation in thickness between the chips, and therefore, it is necessary to make the thicknesses of these chips substantially the same. Therefore, when the thickness of the chip is made substantially the same by polishing or the like, the back electrode or the like formed on the back surface of the chip may be removed, leading to a decrease in quality or yield.

  For this reason, there is a demand for an electronic device that can be manufactured without deteriorating quality and yield in an electronic device formed by integrating a plurality of chips.

  According to one aspect of the present embodiment, a step of attaching one surface of the first electronic element and one surface of the second electronic element to the support member, and the other surface of the first electronic element Forming a conductive material layer on the other surface of the second electronic element, forming a conductive material layer on the other surface of the second electronic element, and a conductive material layer formed on the other surface of the first electronic element and the second electronic element. A step of covering the conductive material layer formed on the other surface of the electronic element with a resin, the conductive material layer formed on the other surface of the first electronic element and the other of the second electronic element Removing until the conductive material layer formed on the surface is exposed, the exposed conductive material layer of the other surface of the first electronic element, and the conductive material layer of the other surface of the second electronic element Connecting a metal plate to the conductive material layer and electrically connecting the conductive material layer and the metal plate. And wherein the Rukoto.

  According to the disclosed method for manufacturing an electronic device, an electronic device formed by integrating a plurality of chips can be manufactured without causing a decrease in quality or yield.

Process diagram of electronic device manufacturing method (1) Process diagram of electronic device manufacturing method (2) Process diagram of electronic device manufacturing method (3) Explanatory drawing in the manufacturing method of an electronic device (1) Explanatory drawing in the manufacturing method of an electronic device (2) Process drawing (1) of the manufacturing method of the electronic device in 1st Embodiment Process drawing (2) of the manufacturing method of the electronic device in 1st Embodiment Process drawing (3) of the manufacturing method of the electronic device in the first embodiment Explanatory drawing of the manufacturing method of the electronic device in 2nd Embodiment Explanatory drawing of the manufacturing method of the electronic device in 3rd Embodiment Process drawing (1) of the manufacturing method of the electronic device in 4th Embodiment Process drawing (2) of the manufacturing method of the electronic device in 4th Embodiment

  The form for implementing is demonstrated below. In addition, about the same member etc., the same code | symbol is attached | subjected and description is abbreviate | omitted.

[First Embodiment]
First, a case where an electronic device is manufactured by integrating a plurality of chips by a rewiring technique will be described with reference to FIGS.

  First, as shown in FIG. 1A, the surface 910a side of the first chip 910 and the surface 920a side of the second chip 920 are arranged and attached to the support member 930 by flip chip mounting.

  The first chip 910 is formed of a semiconductor substrate such as GaN. A transistor (not shown) or the like is formed on the front surface 910a side of the first chip 910, and a back electrode (not shown) or the like is formed on the back surface 910b side. The second chip 920 is made of a material different from that of the first chip 910 and is formed of, for example, a ceramic substrate. A matching circuit such as a capacitor, a resistor, and an inductor (not shown) and wiring are formed on the front surface 920a side of the second chip 920, and a back electrode and the like (not shown) are formed on the back surface 920b side. . The second chip 920 is provided with a through electrode 921 that penetrates from the front surface 920a to the back surface 920b of the second chip 920, and is connected to the ground on the back surface 920b side.

  Note that, as described above, the first chip 910 includes a transistor, and thus generates heat when the transistor operates. For this reason, the first chip 910 is preferably formed to be thin, and has a structure in which heat can be released by bonding metal or the like to the back surface of the first chip 910. Since the second chip 920 is a matching circuit, it does not generate heat, but also serves as a bias circuit, so that the back surface 920b side is generally grounded.

  Next, as shown in FIG. 1B, the first chip 910 and the second chip 920 attached to the support member 930 are hardened with a mold resin 950. Accordingly, the back surface 910b of the first chip 910 and the back surface 920b of the second chip 920 are covered with the mold resin 950. In this way, the whole of which is hardened with a mold resin in a wafer shape may be called a pseudo wafer.

  Next, as shown in FIG. 1C, the support member 930 is peeled off from the first chip 910 and the second chip 920 that are solidified by the mold resin 950. As a result, the surface 910a of the first chip 910 and the surface 920a of the second chip 920 are exposed.

  Next, as shown in FIG. 2A, an electrode (not shown) formed on the surface 910a of the first chip 910 and an electrode (not shown) formed on the surface 920a of the second chip 920 are provided. Connection is made by rewiring 960. The rewiring 960 is made of a metal material or the like, and is formed by a rewiring process. For example, in the rewiring 960, a metal film for forming the rewiring 960 is formed on the surface 910a of the first chip 910 and the surface 920a of the second chip 920, and the region other than the region where the rewiring 960 is formed. The metal film in the region is formed by removing by dry etching or the like.

  Next, as shown in FIG. 2B, the mold resin 950 covering the back surface 910b of the first chip 910 and the back surface 920b of the second chip 920 is removed by polishing, and the back surface of the first chip 910 is removed. 910b and the back surface 920b of the second chip 920 are exposed. At this time, since the first chip 910 and the second chip 920 have different thicknesses, when the back surfaces of both chips are exposed, the back surface of one of the chips is approximately the same as the thickness of the other chip. It is removed by polishing until

  Next, as shown in FIG. 2C, a metal film 961 is formed on the exposed back surface 910b of the first chip 910 and the back surface 920b of the second chip 920 by plating or the like.

  Next, as shown in FIG. 3, a metal plate 970 is connected to the side on which the metal film 961 is formed by soldering or the like. The metal plate 970 connected in this way is made of a metal material such as copper (Cu) and is connected to the ground. Therefore, the metal plate 970 functions as a ground and has a function of radiating heat generated in the first chip 910.

  By the way, in the above manufacturing process, in the polishing shown in FIG. 2B, polishing is performed until a back electrode (not shown) formed on the back surface 920b of the second chip 920 is exposed. However, if the amount of shaving is large in polishing, even the back electrode formed on the back surface 920b of the second chip 920 is removed by polishing, and in this case, desired electrical characteristics cannot be obtained. In addition, when the amount of shaving during polishing is small, the back electrode formed on the back surface 920b of the second chip 920 remains covered with the mold resin 950 and cannot be electrically connected. For this reason, since one pseudo-wafer has a large number of chips, it is possible to remove the mold resin 950 in all the second chips 920 without removing the back electrode on the back surface 920b. It is extremely difficult. The pseudo wafer formed in the present embodiment is a wafer having a size of 6 inches.

  Therefore, as shown in FIG. 4, a method of forming the back electrode formed on the back surface 920b of the second chip 920 with a thick plating layer 981 having a thickness of about 10 μm, or as shown in FIG. A method of attaching a metal plate 982 to the back surface of the second chip 920 can be considered. However, in the method of forming the plating layer 981 having a film thickness of 10 μm on the back surface 920b of the second chip 920, it takes a long time to form the plating layer 981. Also, there is a variation in thickness between chips, and if the variation in thickness between chips is about 10 μm, it is difficult to uniformly expose the plating layer 981 in the plating layer 981 having a thickness of about 10 μm. is there. Further, in the method of attaching the metal plate 982 to the back surface of the second chip 920, since the second chip 920 is extremely small (for example, 1 mm × 5 mm), the step of connecting the metal plate 982 to the second chip 920 is performed. It is difficult and requires time and cost.

(Electronic device manufacturing method)
Next, a method for manufacturing an electronic device in the present embodiment will be described.

  First, as shown in FIG. 6A, the surface 10a side of the first chip 10 and the surface 20a side of the second chip 20 are arranged and attached to the support member 30 by flip chip mounting.

  The first chip 10 is formed of a semiconductor substrate such as GaN. A transistor or the like (not shown) is formed on the front surface 10a side of the first chip 10, and a back electrode or the like (not shown) is formed on the back surface 10b side. The second chip 20 is formed of a substrate made of a material different from that of the first chip 10, for example, a cheap substrate such as silicon or ceramics. Matching circuits and wirings such as capacitors (not shown), resistors, inductors, and the like are formed on the front surface 20a side of the second chip 20, and back surface electrodes (not shown) are formed on the back surface 20b side. . The second chip 20 is provided with a through electrode 21 that penetrates from the front surface 20a to the back surface 20b of the second chip 20, and is thereby connected to the ground on the back surface 20b side. The support member 30 is formed of, for example, a sticky sheet or substrate such as an adhesive sheet. In the present application, the first chip 10 may be referred to as a first electronic element, and the second chip 20 may be referred to as a second electronic element. The first chip 10 and the second chip 20 each have a thickness of 100 μm to 300 μm. For example, the first chip 10 and the second chip 20 are formed to have a thickness of 100 μm. There is a height variation of about ± 10 μm due to the inclination.

  Next, as shown in FIG. 6B, a conductive material layer 41 is formed on the back surface 10b of the first chip 10 attached to the support member 30, and the back surface 20b of the second chip 20 is formed. Then, the conductive material layer 42 is formed. The conductive material layers 41 and 42 are formed by supplying silver paste or gold paste onto the back surface 10b of the first chip 10 and onto the back surface 20b of the second chip 20 using a dispenser or the like. The silver paste or the gold paste supplied in this way spreads due to surface tension, and the total thickness becomes 15 μm to 0.5 mm. By sintering, the conductive material layers 41 and 42 having substantially the same thickness as this thickness are formed. It is formed. In the present embodiment, the conductive material layers 41 and 42 are formed to have a thickness of about 50 μm.

  Next, as shown in FIG. 6C, the conductive material layer 42 is formed on the first chip 10 and the back surface 20 b where the conductive material layer 41 is formed on the back surface 10 b attached to the support member 30. The second chip 20 is solidified with the mold resin 50. Thus, the conductive material layer 41 formed on the back surface 10 b of the first chip 10 and the conductive material layer 42 formed on the back surface 20 b of the second chip 20 are covered with the mold resin 50.

  Next, as shown in FIG. 7A, the support member 30 is peeled off from the first chip 10 and the second chip 20 that are hardened by the mold resin 50. Thereby, the surface 10a of the first chip 10 and the surface 20a of the second chip 20 are exposed.

  Next, as shown in FIG. 7B, an unillustrated electrode formed on the surface 10a of the first chip 10, an unillustrated electrode formed on the surface 20a of the second chip 20, and the like. Connection is made by rewiring 60. The rewiring 60 is formed of a metal material or the like, and is formed by a rewiring process. For example, in the rewiring 60, a metal film for forming the rewiring 60 is formed on the surface 10a of the first chip 10 and the surface 20a of the second chip 20, and a region other than the region where the rewiring 60 is formed. The metal film in the region is formed by removing by dry etching or the like.

  Next, as shown in FIG. 7C, the mold resin 50 covering the conductive material layer 41 on the back surface 10b of the first chip 10 and the conductive material layer 42 on the back surface 20b of the second chip 20 is polished. Remove. Thereby, the conductive material layer 41 formed on the back surface 10b of the first chip 10 and the conductive material layer 42 formed on the back surface 20b of the second chip 20 are exposed. In this way, the total thickness of the first chip 10 and the conductive material layer 41 and the total thickness of the second chip 20 and the conductive material layer 42 can be made substantially the same. Even if the thicknesses of the first chip 10 and the second chip 20 are different, the conductive material layer 41 and the conductive material layer 42 are sufficiently thick, so that the conductive material layer 41 and the conductive material layer 42 are formed. Will not be removed before either one is exposed.

  Next, as shown in FIG. 8, a metal plate 70 is attached to the conductive material layer 41 formed on the back surface 10 b of the first chip 10 and the conductive material layer 42 formed on the back surface 20 b of the second chip 20. Connect with solder. The metal plate 70 thus connected is made of a metal material such as copper (Cu) and is connected to the ground. Accordingly, the metal plate 70 functions as a ground and has a function of radiating heat generated in the first chip 10.

  In the present embodiment, the conductive material layer 41 and the conductive material layer 42 are formed as thick as 15 μm to 0.5 mm. For this reason, even if the thickness varies between the first chip 10 and the second chip 20, the conductive material layer 41 and the conductive material layer 42 are removed before either one is exposed. There is nothing. Therefore, the back electrode formed on the back surface 10b of the first chip 10 and the back electrode formed on the back surface 20b of the second chip 20 are not removed by polishing. Further, since the conductive material layer 41 and the conductive material layer 42 are formed by supplying silver paste or the like with a dispenser or the like, the thick conductive material layers 41 and 42 can be formed in a short time. As a result, a power amplifier with stable quality can be manufactured with a high yield.

[Second Embodiment]
Next, a second embodiment will be described. In the present embodiment, the conductive material layer 41 on the back surface 10b of the first chip 10 is removed.

  The electronic device manufacturing method according to the present embodiment is the same as the electronic device manufacturing method according to the first embodiment, after the steps shown in FIGS. 6A to 7B are performed, and then to FIG. As shown, polishing is performed to remove the mold resin 50 until the back surface 10b of the first chip 10 is exposed. Thereby, although the conductive material layer 42 on the back surface 20b of the second chip 20 remains, the conductive material layer 41 on the back surface 10b of the first chip 10 is removed, and the back surface 10b of the first chip 10 is exposed. . Since the through-electrode is not formed in the first chip 10, the back electrode on the back surface 10b is not necessarily required and may be removed.

  Next, as shown in FIG. 9B, the conductive material layer 42 on the back surface 10b of the first chip 10 and the back surface 20b of the second chip 20 is connected to the metal plate 70 by soldering or the like. Thereby, the electronic device in the present embodiment can be manufactured.

  The contents other than the above are the same as in the first embodiment.

[Third Embodiment]
Next, a third embodiment will be described. The present embodiment is an electronic device in which a conductive material layer 41 having a structure in which the heat dissipation efficiency of the first chip 10 is increased is formed.

  This embodiment is a method of manufacturing an electronic device according to the first embodiment, and after conducting the steps in FIGS. 6A to 7B, the conductive steps are performed in the polishing step in FIG. The material layer 41 and the conductive material layer 42 are left slightly thick. Thereafter, as shown in FIG. 10A, a recess 41a is formed in the conductive material layer 41 formed on the back surface 10b of the first chip 10 by a process such as cutting.

  Next, as shown in FIG. 10B, the conductive material layer 41 on the back surface 10b of the first chip 10 and the conductive material layer 42 on the back surface 20b of the second chip 20 are connected to the metal plate 170 by soldering or the like. . The metal plate 170 is provided with a convex portion 170 a having a shape corresponding to the concave portion 41 a in the conductive material layer 41, so that a region where the conductive material layer 41 and the metal plate 170 are in contact with each other can be widened. The heat conduction efficiency can be increased.

  The contents other than the above are the same as in the first embodiment.

[Fourth Embodiment]
Next, a fourth embodiment will be described. The present embodiment has a structure in which a conductive material layer 141 that covers the side surface of the first chip 10 is formed in order to efficiently dissipate the heat generated first chip 10.

  First, as shown in FIG. 11A, the surface 10a side of the first chip 10 and the surface 20a side of the second chip 20 are arranged and attached to the support member 30 by flip chip mounting.

  Next, as shown in FIG. 11B, a conductive material layer 141 is formed so as to cover the back surface 10b and the side surface 10c of the first chip 10 attached to the support member 30, and the second chip. A conductive material layer 42 is formed on the back surface 20 b of the 20. The conductive material layers 141 and 42 are formed by supplying silver paste or gold paste onto the back surface 10b and the side surface 10c of the first chip 10 and the back surface 20b of the second chip 20 using a dispenser or the like. To do.

  Next, as shown in FIG. 11C, the conductive material layer 42 is formed on the first chip 10 on which the conductive material layer 141 is formed on the back surface 10b attached to the support member 30 and the back surface 20b. The second chip 20 is solidified with the mold resin 50. Accordingly, the conductive material layer 141 formed on the back surface 10 b of the first chip 10 and the conductive material layer 42 formed on the back surface 20 b of the second chip 20 are covered with the mold resin 50.

  Next, as shown in FIG. 12A, the support member 30 is peeled off from the first chip 10 and the second chip 20 that are hardened by the mold resin 50. Thereby, the surface 10a of the first chip 10 and the surface 20a of the second chip 20 are exposed.

  Next, as shown in FIG. 12B, an unillustrated electrode formed on the surface 10a of the first chip 10 and an unillustrated electrode formed on the surface 20a of the second chip 20 are reconnected. Connection is made by wiring 60. Thereafter, the mold resin 50 covering the conductive material layer 141 on the back surface 10b of the first chip 10 and the conductive material layer 42 on the back surface 20b of the second chip 20 is removed by polishing. In this embodiment, an insulating film (not shown) or the like is formed on the conductive material layer 141 so that the conductive material layer 141 and the rewiring 60 are not in contact with each other. Above, the rewiring 60 is formed by a rewiring process. Thereby, the conductive material layer 141 formed on the back surface 10b of the first chip 10 and the conductive material layer 42 formed on the back surface 20b of the second chip 20 are exposed.

  Next, as shown in FIG. 12C, the conductive material layer 141 formed on the back surface 10b of the first chip 10 and the conductive material layer 42 formed on the back surface 20b of the second chip 20 are made of metal. The plate 70 is connected with solder or the like. The metal plate 70 thus connected is made of a metal material such as copper (Cu) and is connected to the ground. Accordingly, the metal plate 70 functions as a ground and has a function of radiating heat generated in the first chip 10.

  The contents other than the above are the same as in the first embodiment.

  Although the embodiment has been described in detail above, it is not limited to the specific embodiment, and various modifications and changes can be made within the scope described in the claims.

In addition to the above description, the following additional notes are disclosed.
(Appendix 1)
Attaching one surface of the first electronic element and one surface of the second electronic element to the support member;
Forming a conductive material layer on the other surface of the first electronic element and forming a conductive material layer on the other surface of the second electronic element;
Covering the conductive material layer formed on the other surface of the first electronic element and the conductive material layer formed on the other surface of the second electronic element with a resin;
Removing the resin until the conductive material layer formed on the other surface of the first electronic element and the conductive material layer formed on the other surface of the second electronic element are exposed;
A metal plate is connected to the exposed conductive material layer on the other surface of the first electronic element and the conductive material layer on the other surface of the second electronic element, and the conductive material layer and the metal plate are connected to each other. Electrically connecting, and
A method for manufacturing an electronic device, comprising:
(Appendix 2)
After the step of removing the resin,
Forming a recess in the conductive material layer on the other surface of the exposed first electronic element;
The metal plate is formed with a convex portion corresponding to the concave portion,
2. The method of manufacturing an electronic device according to claim 1, wherein when the metal plate is bonded to the conductive material layer, the convex portion is inserted into the concave portion.
(Appendix 3)
The method of manufacturing an electronic device according to appendix 1 or 2, wherein either one or both side surfaces of the first electronic element or the second electronic element are covered with the conductive material layer.
(Appendix 4)
Attaching one surface of the first electronic element and one surface of the second electronic element to the support member;
Forming a conductive material layer on the other surface of the first electronic element and forming a conductive material layer on the other surface of the second electronic element;
Covering the conductive material layer formed on the other surface of the first electronic element and the conductive material layer formed on the other surface of the second electronic element with a resin;
Removing the resin until the other surface of the first electronic element is exposed and a conductive material layer formed on the other surface of the second electronic element is exposed;
A metal plate is connected to the conductive material layer on the other surface of the exposed first electronic element and the other surface of the second electronic element, and the conductive material layer and the metal plate are electrically connected. And a process of
A method for manufacturing an electronic device, comprising:
(Appendix 5)
Attaching one surface of the first electronic element and one surface of the second electronic element to the support member;
Forming a conductive material layer on the other surface of the first electronic element and forming a conductive material layer on the other surface of the second electronic element;
A total thickness of the first electronic element and the conductive material layer formed on the other surface of the first electronic element; and the other surface of the second electronic element and the second electronic element. A step of making the combined thickness of the formed conductive material layers substantially uniform;
A method for manufacturing an electronic device, comprising:
(Appendix 6)
Removing the support member;
The electronic apparatus according to any one of appendices 1 to 5, further comprising a step of forming a rewiring that connects one surface of the first electronic element and one surface of the second electronic element. Manufacturing method.
(Appendix 7)
The method for manufacturing an electronic device according to any one of appendices 1 to 6, wherein the conductive material layer is formed of a material containing silver or gold.
(Appendix 8)
The conductive material layer is formed by supplying silver paste or gold paste to the other surface of the first electronic element and the other surface of the second electronic element, and sintering. 7. A method of manufacturing an electronic device according to any one of appendices 1 to 6,
(Appendix 9)
9. The method for manufacturing an electronic device according to any one of appendices 1 to 8, wherein the conductive material layer has a thickness of 15 μm to 0.5 mm.

DESCRIPTION OF SYMBOLS 10 1st chip | tip 10a Front surface 10b Back surface 10c Side surface 20 2nd chip | tip 20a Front surface 20b Back surface 21 Through electrode 30 Support member 41 Conductive material layer 42 Conductive material layer 50 Mold resin 60 Rewiring 70 Metal plate

Claims (7)

Attaching one surface of the first electronic element and one surface of the second electronic element to the support member;
Forming a conductive material layer on the other surface of the first electronic element and forming a conductive material layer on the other surface of the second electronic element;
Covering the conductive material layer formed on the other surface of the first electronic element and the conductive material layer formed on the other surface of the second electronic element with a resin;
Removing the resin until the conductive material layer formed on the other surface of the first electronic element and the conductive material layer formed on the other surface of the second electronic element are exposed;
A metal plate is connected to the exposed conductive material layer on the other surface of the first electronic element and the conductive material layer on the other surface of the second electronic element, and the conductive material layer and the metal plate are connected to each other. Electrically connecting, and
A method for manufacturing an electronic device, comprising: After the step of removing the resin,
Forming a recess in the conductive material layer on the other surface of the exposed first electronic element;
The metal plate is formed with a convex portion corresponding to the concave portion,
The method for manufacturing an electronic device according to claim 1, wherein when the metal plate is bonded to the conductive material layer, the convex portion is inserted into the concave portion.   3. The method of manufacturing an electronic device according to claim 1, wherein a side surface of one or both of the first electronic element and the second electronic element is covered with the conductive material layer. . Attaching one surface of the first electronic element and one surface of the second electronic element to the support member;
Forming a conductive material layer on the other surface of the first electronic element and forming a conductive material layer on the other surface of the second electronic element;
Covering the conductive material layer formed on the other surface of the first electronic element and the conductive material layer formed on the other surface of the second electronic element with a resin;
Removing the resin until the other surface of the first electronic element is exposed and a conductive material layer formed on the other surface of the second electronic element is exposed;
A metal plate is connected to the conductive material layer on the other surface of the exposed first electronic element and the other surface of the second electronic element, and the conductive material layer and the metal plate are electrically connected. And a process of
A method for manufacturing an electronic device, comprising: Attaching one surface of the first electronic element and one surface of the second electronic element to the support member;
Forming a conductive material layer on the other surface of the first electronic element and forming a conductive material layer on the other surface of the second electronic element;
A total thickness of the first electronic element and the conductive material layer formed on the other surface of the first electronic element; and the other surface of the second electronic element and the second electronic element. A step of making the combined thickness of the formed conductive material layers substantially uniform;
A method for manufacturing an electronic device, comprising: Removing the support member;
6. The electron according to claim 1, further comprising a step of forming a rewiring that connects one surface of the first electronic element and one surface of the second electronic element. Device manufacturing method.   The method for manufacturing an electronic device according to claim 1, wherein the conductive material layer is made of a material containing silver or gold.

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