JP2016116058A - Vibration device, oscillator, electronic apparatus and moving body - Google Patents

Abstract

A vibrating device that reduces performance deterioration of a vibrating piece such as frequency temperature characteristics is provided. A crystal resonator according to the present invention includes a resonator element having a first connection terminal and a second connection terminal on a lower surface of a crystal substrate, and a first connection portion and a second connection on an upper surface. Connected to the bottom plate 31 having the connection portion 46, the first metal projection 35 connected to the first connection terminal 25 and the first connection portion 45, the second connection terminal 26 and the second connection portion 46. A first center that is the center of the surface of the first metal projection 35 connected to the first connection terminal 25 and the height H of the first metal projection 35. 58 and the second center 59 which is the center of the surface connected to the second connection terminal 26 of the second metal projection 36 is 0.075 ≦ H / L ≦ 0.3. It is characterized by satisfying the relationship. [Selection] Figure 2

Description

  The present invention relates to a vibrating device, an oscillator, an electronic apparatus, and a moving object.

Conventionally, a vibration device such as a crystal oscillator or a crystal resonator is a metal such as a metal bump formed on a connection portion (projection for electrode lead) provided on the inner bottom surface of a package (container body) made of ceramic or the like. There has been known a configuration in which a vibrating piece (quartz piece) is connected to and supported by a package via a protruding portion (holding portion).
As such a vibration device, for example, as described in Patent Document 1, the height of the metal protrusion is increased by stacking at least two metal bumps, and the vibration piece is connected to the package. By supporting the structure, the stress transmitted from the package to the resonator element via the metal protrusion is reduced, and the characteristics variation of the vibration device, for example, the fluctuation of the oscillation frequency or the fluctuation of the frequency temperature characteristic of the oscillation frequency is reduced. Has been proposed.

Japanese Patent Laid-Open No. 11-274889

However, in such a vibrating device, the stress transmitted from the package to the vibrating piece greatly affects not only the height of the metal protrusion, but also the distance between the connecting portions of the inner bottom portion of the package to which the vibrating piece is connected and supported. To do. Therefore, in order to reduce the stress transmitted to the resonator element, as in the resonator device described in Patent Document 1, simply by stacking metal bumps and increasing the height of the metal protrusion, the metal from the resonator device package is increased. The stress that is transmitted to the resonator element through the protrusions cannot be sufficiently reduced, and the characteristic variation of the vibration device, for example, the fluctuation of the oscillation frequency or the fluctuation of the frequency temperature characteristic of the oscillation frequency is increased. was there.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

Application Example 1 A vibration device according to this application example has a first surface, a resonator element having a first connection terminal and a second connection terminal provided on the first surface, and a second surface. A substrate having a first connection part and a second connection part provided on the second surface; a first metal protrusion connected to the first connection terminal and the first connection part; A second metal projection connected to the second connection terminal and the second connection, the height of the first metal projection is H1, the height of the second metal projection is H2, And the distance between the center of the surface of the first metal protrusion connected to the first connection terminal and the center of the surface of the second metal protrusion connected to the second connection terminal. When L is L, the following relationship is satisfied.
0.075 ≦ H1 / L ≦ 0.3 and 0.075 ≦ H2 / L ≦ 0.3

According to this application example, when stress is generated due to the difference between the expansion or contraction amount of the resonator element and the extension or contraction amount of the substrate accompanying the change in the ambient temperature of the vibration device, 0.075 ≦ H1
/L≦0.3 and 0.075 ≦ H2 / L ≦ 0.3 to satisfy the relationship, the stress generated by the difference between the amount of expansion or contraction of the resonator element and the amount of expansion or contraction of the substrate However, it is possible to reduce the transmission to the resonator element. The characteristics of the resonator element, for example, the output frequency, the frequency temperature characteristic, the equivalent series resistance, and the like greatly vary depending on the stress applied to the resonator element.Therefore, by reducing the stress transmitted to the resonator element, the characteristic variation of the resonator device, for example, Variations in frequency temperature characteristics and hysteresis can be reduced.

Application Example 2 It is preferable that the vibration device according to the application example satisfies the following relationship.
0.13 ≦ H1 / L ≦ 0.3 and 0.13 ≦ H2 / L ≦ 0.3

According to this application example, when stress is generated due to the difference between the expansion or contraction amount of the resonator element and the extension or contraction amount of the substrate accompanying the change in the ambient temperature of the vibration device, 0.13 ≦ H1 /
By satisfying the relationship of L ≦ 0.3 and 0.13 ≦ H2 / L ≦ 0.3, the stress generated by the difference between the amount of expansion or contraction of the resonator element and the amount of expansion or contraction of the substrate is reduced. Further, it is possible to further reduce transmission to the vibration region of the resonator element. Therefore, by further reducing the stress transmitted to the resonator element, it is possible to further reduce the characteristic variation of the vibrating device, for example, hysteresis as compared with Application Example 1.

Application Example 3 In the vibration device according to the application example described above, at least one of the first metal protrusion and the second metal protrusion is in the first direction along the first direction from the vibration piece toward the substrate. A length along a direction intersecting the direction has a first length region and a second length region shorter than the first length.

According to this application example, the stress generated by the difference between the expansion or contraction amount of the vibration piece and the extension or contraction amount of the substrate accompanying the change in the ambient temperature of the vibration device is the first metal protrusion and the second metal. Since it is transmitted to the resonator element via the protrusion, in at least one of the first metal protrusion and the second metal protrusion, the first length region, that is, the first thickness region, and the second length Is transmitted through the second region, that is, the second region that is thinner than the first region.

In addition, when stress is transmitted to the resonator element through an object having a thick area and a thin area, the thin area absorbs stress by being distorted more than a thick area. Therefore, the stress generated by the difference between the expansion or contraction amount of the resonator element and the extension or contraction amount of the substrate accompanying the change in the ambient temperature of the vibration device is greater than the first length region by the second length. Therefore, the stress transmitted to the resonator element can be further reduced, and fluctuations in characteristics of the vibrating device, such as fluctuations in frequency temperature characteristics and hysteresis, can be further reduced.

Application Example 4 The vibration device according to the application example is characterized in that at least one of the first metal protrusion and the second metal protrusion is a metal bump.

According to this application example, since at least one of the first metal protrusion and the second metal protrusion is a metal bump, the metal protrusion formed of the metal bump can be simply changed by changing the size of the metal bump. The height can be adjusted. Therefore, in the vibration device, the distance between the center of the surface connected to the first connection terminal of the first metal protrusion and the center of the surface connected to the second connection terminal of the second metal protrusion. Even when L is changed, it is possible to easily adjust at least one of H1 / L and H2 / L to a range in which the fluctuation of the frequency temperature characteristic is small, and the vibration device that reduces the fluctuation of the frequency temperature characteristic, hysteresis, etc. It can be manufactured efficiently.

Application Example 5 The vibration device according to the application example described above is characterized in that at least one of the first metal protrusion and the second metal protrusion has a structure in which at least two metal bumps overlap each other.

According to this application example, since at least one of the first metal protrusion and the second metal protrusion has a structure in which metal bumps are stacked, it is configured by metal bumps only by changing the number of metal bumps to be stacked. The height of the metal protrusion can be adjusted. Therefore, in the vibration device, the center of the surface connected to the first connection terminal of the first metal protrusion and the second of the second metal protrusion.
Even when the distance L between the center of the surface connected to the connection terminal and the center is changed, at least one of H1 / L and H2 / L can be easily adjusted to a range in which the variation of the frequency temperature characteristic is small. In addition, it is possible to efficiently manufacture a vibration device with reduced fluctuations in frequency temperature characteristics, hysteresis, and the like.

Application Example 6 In the vibration device according to the application example, the at least two metal bumps are
The virtual center line that intersects the second surface of one metal bump and the virtual center line that intersects the second surface of the other metal bump overlap each other in a shifted state.

According to this application example, the size (thickness) of the metal bumps is reduced (thinned) by overlapping at least two metal bumps with the virtual center line intersecting the second surface of the substrate being shifted.
Without this, the area where adjacent metal bumps overlap can be reduced. Therefore, compared to the structure in which the virtual center lines of adjacent metal bumps overlap, the apparent thickness, that is, adjacent metal bumps when viewed from above, is connected without reducing the size of the metal bumps. The size of the area that is being made can be made thinner (smaller).

When the stress is transmitted to the vibrating piece through an object having a certain thickness, the thinner the thickness, the larger the distortion as compared with the thicker case, the stress is absorbed. Therefore, the stress transmitted to the vibrating piece is reduced.
Therefore, the stress generated by the difference between the amount of expansion or contraction of the resonator element and the amount of expansion or contraction of the substrate accompanying the change in the ambient temperature of the vibration device is a metal that overlaps with the virtual center line shifted. Since the bump portion is absorbed by being greatly distorted, the stress transmitted to the resonator element can be further reduced, and the characteristic variation of the vibration device, for example, the fluctuation of the frequency temperature characteristic, the hysteresis, and the like can be further reduced.

Application Example 7 An oscillator according to this application example includes the vibration device according to any one of Application Examples 1 to 6, an oscillation circuit that is disposed on the substrate and that oscillates the resonator element. It is characterized by having.

According to this application example, it is possible to reduce the transmission of the stress generated according to the difference between the expansion or contraction amount of the vibration piece accompanying the change in the ambient temperature of the vibration device and the extension or shrinkage amount of the substrate to the vibration piece. By using the vibration device with reduced characteristic fluctuations, it is possible to provide a highly reliable oscillator with small characteristic fluctuations, for example, reduced frequency temperature characteristic fluctuations and hysteresis.

Application Example 8 An electronic apparatus according to this application example includes the vibration device according to any one of Application Examples 1 to 6.

According to this application example, it is possible to reduce the transmission of the stress generated according to the difference between the expansion or contraction amount of the vibration piece accompanying the change in the ambient temperature of the vibration device and the extension or shrinkage amount of the substrate to the vibration piece. By using a vibration device that has reduced characteristic fluctuations, it is possible to provide a highly reliable electronic device that has small characteristic fluctuations, such as fluctuations in frequency temperature characteristics and hysteresis.

Application Example 9 A moving object according to this application example includes the vibration device according to any one of Application Examples 1 to 6.

According to this application example, it is possible to reduce the transmission of the stress generated according to the difference between the expansion or contraction amount of the vibration piece accompanying the change in the ambient temperature of the vibration device and the extension or shrinkage amount of the substrate to the vibration piece. By using the vibration device with reduced characteristic fluctuations, it is possible to provide a highly reliable moving body with small characteristic fluctuations, for example, reduced frequency temperature characteristic fluctuations and hysteresis.

The top view which shows the outline of the crystal oscillator as a vibration device which concerns on 1st Embodiment. AA sectional drawing in FIG. The figure which shows the relationship between H1 / L (H2 / L) and the hysteresis of the frequency temperature characteristic of a crystal oscillator. Sectional drawing which shows the outline of the crystal oscillator as a vibration device which concerns on the modification of 1st Embodiment. Sectional drawing which shows the outline of the crystal oscillator as a vibration device which concerns on 2nd Embodiment. Sectional drawing which shows the outline of the crystal oscillator as a vibration device which concerns on 3rd Embodiment. Sectional drawing which shows the outline of the crystal oscillator as a vibration device which concerns on 4th Embodiment. The perspective view which shows the structure of the mobile type personal computer as an example of an electronic device. The perspective view which shows the structure of the mobile telephone as an example of an electronic device. The perspective view which shows the structure of the digital camera as an example of an electronic device. The perspective view which shows the structure of the motor vehicle as an example of a mobile body.

DESCRIPTION OF EMBODIMENTS Embodiments embodying the present invention will be described below with reference to the drawings. In the following figures, the scale of each layer and each member may be described on a scale different from the actual scale so that each layer and each member can be recognized and the explanation is easy to understand. is there.

<First Embodiment>
The crystal resonator 10 as the vibration device according to the present embodiment will be described as an example. In the following drawings, the same or similar components are denoted by the same or similar reference numerals.

[Crystal oscillator]
FIG. 1 is a plan view schematically showing a crystal resonator 10 as a vibrating device according to the first embodiment, and FIG. 2 is a cross-sectional view taken along line AA in FIG. As shown in FIG. 1 and FIG.
The reference numeral 0 includes a vibrating piece 20, a package 30, a lid 34, and the like.

For convenience of explanation, the lid 34 is not shown in FIG. Further, in the following description, the upper side in FIG. 2 will be described as “upper” and the lower side as “lower”. Further, the vibrating piece 20 and the bottom plate 31
In each member such as the side wall 32 and the oscillation circuit 40, the upper surface is described as the upper surface, and the lower surface is described as the lower surface.

(Vibration piece)
The resonator element 20 includes a quartz substrate 21 made of quartz, which is a kind of piezoelectric single crystal, and the first connection terminal 2.
5, the second connection terminal 26, excitation electrodes 27 a and 27 b, extraction electrodes 28 a and 28 b, and the like. The resonator element 20 vibrates at a predetermined resonance frequency when a predetermined AC voltage is applied to the excitation electrodes 27a and 27b.

In the present embodiment, the vibration piece 20 uses the crystal substrate 21 for the vibration piece 20, but the vibration piece 2
0 may be composed of other piezoelectric single crystals such as lithium tantalate and lithium niobate. When the resonator element 20 is composed of a piezoelectric single crystal other than quartz, the crystal orientation (cut angle) and the like are selected so that the same characteristics as those obtained when quartz is formed.

The quartz substrate 21 has an upper surface 22, a lower surface 23 as a first surface, and a side surface 24 that connects the upper surface 22 and the lower surface 23.
On the upper surface 22 of the quartz substrate 21, an excitation electrode 27a and an extraction electrode 28a extending from the excitation electrode 27a are formed. On the lower surface 23 of the quartz substrate 21, excitation electrodes 27b,
An extraction electrode 28b extending from the excitation electrode 27b, a first connection terminal 25, and a second connection terminal 26 are formed.

The excitation electrode 27a and the excitation electrode 27b are formed on the inner side of the outer shape of the quartz substrate 21, are formed in a substantially rectangular shape or a substantially circular shape, and are disposed so as to overlap each other when viewed from above with the quartz substrate 21 interposed therebetween. It is an electrode for vibrating the quartz substrate 21.

The extraction electrode 28a extends from the excitation electrode 27a via the side surface 24 of the crystal substrate 21 to the first connection terminal 25 formed on the lower surface 23 of the crystal substrate 21, and the excitation electrode 27a.
And the first connection terminal 25 are electrically connected to each other.

The extraction electrode 28b extends from the excitation electrode 27b to the second connection terminal 26, and is an electrode that electrically connects the excitation electrode 27b and the second connection terminal 26.

First connection terminal 25, second connection terminal 26, excitation electrodes 27a and 27b, and extraction electrode 28
a and 28b are formed by a method such as vapor deposition, sputtering, or plating. The first connection terminal 25, the second connection terminal 26, the excitation electrodes 27a and 27b, and the extraction electrodes 28a and 28b
Is composed of at least two layers of a base layer and an upper layer.

Examples of the constituent material of the underlayer include materials having adhesion to the quartz substrate 21. Specifically, chromium (Cr), nickel (Ni), titanium (Ti), tungsten (W), etc. One kind of metal element or a mixture or alloy of two or more kinds is used.

On the other hand, the constituent material of the upper layer includes a material having particularly high electrical conductivity. Specifically, gold (
A metal element such as Au), platinum (Pt), silver (Ag), aluminum (Al), copper (Cu), or a mixture or alloy containing one or more of these metal elements is used.

The first connection terminal 25, the second connection terminal 26, the excitation electrodes 27a and 27b, and the extraction electrodes 28a and 28b may be composed of one layer, for example, gold (Au) or platinum (Pt).
, Silver (Ag), aluminum (Al), copper (Cu), or other metal elements, or one or a mixture of two or more of these metal elements or an alloy thereof may be used.

(package)
The package 30 includes a bottom plate 31 as a substrate, a side wall 32, a seal ring 33, and the like. The bottom plate 31 has an upper surface 42 as a second surface and a lower surface 43.

Specifically, in the package 30, the side wall 32 is laminated on the peripheral edge portion of the upper surface 42 of the bottom plate 31, thereby forming an inner space 39 (housing space) whose central portion is concave. Contains a resonator element 20 and an oscillation circuit 40. The outer shape of the package 30 is not limited, and can be, for example, a rectangular parallelepiped shape or a cylindrical shape.

The bottom plate 31 and the side wall 32 are preferably formed of a material having a thermal expansion coefficient that is equal to or close to that of the vibrating piece 20 or the lid 34, and ceramic is used in this embodiment.

The seal ring 33 is formed of, for example, a metal brazing material such as gold brazing or silver brazing, a metal such as glass or Kovar, as a bonding material between the side wall 32 and the lid 34.
Are provided in a frame shape (substantially rectangular shape) along the upper surface of the plate.

A first connection portion 45 and a second connection portion 46 are formed on the upper surface 42 of the bottom plate 31, and a plurality of external connection terminals 38 that are connected to external terminals are formed on the lower surface 43 of the bottom plate 31. Yes.
The 1st connection part 45, the 2nd connection part 46, and the external connection terminal 38 are obtained by forming in order of tungsten metallization, nickel plating, and gold plating, for example.

The first connection part 45 is electrically and mechanically connected to the first metal protrusion 35, and the first metal protrusion 35 is electrically and mechanically connected to the first connection terminal 25. . The second connection portion 46 is electrically and mechanically connected to the second metal protrusion 36, and the second metal protrusion 36 is electrically and mechanically connected to the second connection terminal 26. . That is, the resonator element 20 includes the first connection terminal 25, the first metal protrusion 35, and the first connection portion 45.
The bottom plate 31 is connected to the second connection terminal 26, the second metal projection 36, and the second connection 46.
It is supported by.

The first connection portion 45 and the second connection portion 46 are wires (not shown) arranged on the bottom plate 31.
Thus, the external connection terminal 38 is electrically connected. The external connection terminal 38 is an electrode that is used to connect an external mounting substrate to supply an alternating voltage to the resonator element 20 or to output an electrical signal such as a frequency.

A pad electrode 48 is provided on the lower surface of the oscillation circuit 40, and the pad electrode 48 is FCB.
(Flip Chip Bonding) or a conductive adhesive is electrically connected and fixed to the internal connection terminal 49 provided on the upper surface 42 of the bottom plate 31.

(Lid)
The lid 34 has a flat plate shape that covers the opening of the package 30 and is formed of, for example, a metal such as Kovar, ceramic, or glass.

The lid 34 accommodates the resonator element 20 in the internal space 39 of the package 30, and then the internal space 3.
9 is joined to the seal ring 33 so as to be in an airtight state. Airtight interior space 3
9, the internal pressure is set to a desired atmospheric pressure. For example, the internal space 39 may be vacuum (pressure lower than atmospheric pressure (1 × 10 ⁵ Pa to 1 × 10 ⁻¹⁰ Pa (JIS Z 8126-1: 19
99)) pressure state) or filled with an inert gas such as nitrogen or argon so that the pressure is equal to atmospheric pressure, the resonator element 20 can continue to vibrate more stably. it can.

Note that the internal space 39 of the present embodiment is sealed in a vacuum. By sealing the internal space 39 in a vacuum, the Q value of the housed vibrating piece 20 can be increased, and furthermore, the vibration of the vibrating piece 20 can be kept stable.

(Metal protrusion)
The 1st metal projection part 35 and the 2nd metal projection part 36 are comprised with the metal of columnar shape (columnar shape). In addition, the 1st metal projection part 35 and the 2nd metal projection part 36 are not limited to a cylinder (columnar shape), A polygonal column, a truncated cone, a spherical shape, etc. may be sufficient. The first metal protrusion 35 and the second metal protrusion 36 are formed by a plating method, metal bumps described in the second and subsequent embodiments, or the like.

Further, after the first metal protrusion 35 and the second metal protrusion 36 are formed on the first connection part 45 and the second connection part 46, respectively, by the above-described method, the first connection terminal 25 and the second connection terminal 26, respectively. Or the first connection terminal 25 by the above method.
And the second connection terminal 26, and then the first connection portion 45 and the second connection portion 4 respectively.
6 may be connected.

As described above, the first metal protrusion 35 is disposed between the first connection terminal 25 of the resonator element 20 and the first connection part 45 of the bottom plate 31, and the second metal protrusion 36 includes the resonator element. The second connection terminal 26 of the 20 and the second connection portion 46 of the bottom plate 31 are arranged. That is, the first metal protrusion 35 and the second metal protrusion 36 are conductive bonding materials for electrically and mechanically connecting the resonator element 20 to the upper surface 42 of the bottom plate 31.

The first metal projection 35 has a first center 58 on the surface connected to the first connection terminal 25 of the first metal projection 35 as viewed from above. The second metal projection 36 has a second center 59 on the surface connected to the second connection terminal 26 of the second metal projection 36 as viewed from above.

Here, the first center 58 of the surface of the first metal projection 35 connected to the first connection terminal 25 is a center of gravity (centroid) of the shape of the first metal projection 35 viewed from above. The second center 59 of the surface of the second metal projection 36 connected to the second connection terminal 26 is a center of gravity (centroid) of the shape of the second metal projection 36 viewed from above.

Next, the height of the first metal protrusion 35, which is the distance between the first connection terminal 25 and the first connection portion 45, is H1, and the height is the distance between the second connection terminal 26 and the second connection portion 46. 2 The height of the metal projection 36 is H2. Further, the first surface of the first metal projection 35 connected to the first connection terminal 25 is the first.
The center 58 and the second center 59 of the surface connected to the second connection terminal 26 of the second metal projection 36.
Let L be the distance between. Hereinafter, the relationship between the above-described H1, H2, and L and hysteresis will be described.

First, the hysteresis of the crystal unit 10 will be described. The resonance frequency of the resonator element 20 is
A resonance frequency at a predetermined temperature T in the process of increasing the ambient temperature of the crystal unit 10;
A resonance frequency at a predetermined temperature T in the process of lowering the ambient temperature of the crystal unit 10;
Have different characteristics. Having a different characteristic when the ambient temperature is rising and when the ambient temperature is decreasing is called having hysteresis. This is considered to be due to the following reason.

In the crystal resonator 10 according to the present embodiment, the resonator element 20 and the bottom plate 31 are not made of the same material, and thus have different thermal expansion coefficients, and the resonator element is accompanied by a change in the ambient temperature of the crystal resonator 10. The amount of elongation or shrinkage of 20 is different from the amount of elongation or shrinkage of the bottom plate 31. Therefore,
When the ambient temperature of the crystal unit 10 changes, stress is generated inside the resonator element 20 due to the difference between the amount of expansion or contraction of the resonator element 20 and the amount of expansion or contraction of the bottom plate 31.

In addition, the resonator element 20 is joined to the inside of the crystal unit 10, that is, the inside of the package 30 via the first metal projection part 35 and the second metal projection part 36.
With respect to the change in the ambient temperature of 0, the vibration piece 20 is transmitted more slowly than the bottom plate 31.

That is, in the process in which the ambient temperature of the crystal unit 10 is rising, even when the ambient temperature of the crystal unit 10 reaches the predetermined temperature T, the temperature of the resonator element 20 is lower than the predetermined temperature T. In the process in which the ambient temperature of the crystal unit 10 is decreasing, even when the ambient temperature of the crystal unit 10 reaches the predetermined temperature T, the temperature of the resonator element 20 is higher than the predetermined temperature T. is there.

From the above, even if the ambient temperature of the crystal unit 10 is the predetermined temperature T, the temperature of the resonator element 20 varies depending on whether the ambient temperature is rising or falling. The amount of elongation or shrinkage of the piece 20 is different. Accordingly, the amount of expansion or contraction of the vibrating piece 20 and the bottom plate 3
The stress generated in the resonator element 20 due to the difference between the amount of expansion and contraction of 1 is that when the ambient temperature reaches a predetermined temperature T in the process in which the ambient temperature of the crystal unit 10 is rising, This is different from the case where the ambient temperature reaches a predetermined temperature T during the descending process.

In addition, it is known that the resonance frequency of the resonator element 20 when a predetermined AC voltage is applied varies depending on the stress applied to the resonator element 20.

Therefore, the resonance frequency of the crystal unit 10 having the resonator element 20 is such that the resonance frequency at the temperature T in the process of increasing the ambient temperature of the crystal unit 10 and the ambient temperature of the crystal unit 10 are decreased. The resonance frequency at the temperature T in the process is different, and this is called hysteresis characteristics or hysteresis.

The reason why the resonance frequency of the vibrating piece 20 changes when stress is applied to the vibrating piece 20 is that the vibration is a region sandwiched between the excitation electrodes 27a and 27b of the quartz substrate 21 in a state where the vibrating piece 20 is vibrating. It is considered that stress is also applied to a region where much energy is collected (hereinafter referred to as a vibration region), and the distribution of vibration energy in the vibration region changes.

From the above, it can be seen that the stress generated by the difference between the expansion or contraction amount of the resonator element 20 and the expansion or contraction amount of the bottom plate 31 accompanying the change in the ambient temperature of the crystal unit 10 is transmitted to the vibration region. If it is reduced, it is considered that the change in the resonance frequency of the resonator element 20 can be reduced.

Further, among the stresses generated by the difference between the amount of expansion or contraction of the vibration piece 20 and the amount of expansion or contraction of the bottom plate 31 and transmitted to the vibration region, along the direction connecting the first center 58 and the second center 59. The distribution of stress in the determined direction depends on the distance L from the first center 58 to the second center 59,
The longer the distance from the first center 58 to the second center 59, the wider the direction along the direction connecting the first center 58 and the second center 59.

Further, the stress transmitted to the vibration region due to the difference between the amount of expansion or contraction of the vibrating piece 20 and the amount of expansion or contraction of the bottom plate 31 is the height H1 of the first metal protrusion 35 and the second metal protrusion. It also depends on the height H2 of 36, and it is considered that the stress transmitted from the bottom plate 31 to the vibrating piece 20 via the first metal protrusion 35 and the second metal protrusion 36 is absorbed and reduced as H1 and H2 increase.

Accordingly, the stress generated by the difference between the amount of expansion or contraction of the resonator element 20 and the amount of expansion or contraction of the bottom plate 31 and transmitted to the vibration region is not the absolute values of H1, H2, and L, but H1 and L
And the ratio of H2 to L.

As described above, the crystal resonator 10 having the resonator element 20 is considered to have hysteresis characteristics corresponding to the stress applied to the resonator element 20. In order to reduce the hysteresis characteristics of the crystal resonator 10, the resonator element 20 It is considered that the connection structure between the base plate 31 and the bottom plate 31 is important.

Therefore, the inventor of the present application has the hysteresis of the crystal unit 10 as H1 / L, which is the ratio of H1 and L, and H2 / L, which is the ratio of H2 and L, in the above-described H1, H2, and L. ,
The experiment was conducted with the assumption that it is related to, and the results shown in FIG. 3 were obtained. In this experiment, since the height H1 of the first metal projection 35 and the height H2 of the second metal projection 36 are substantially the same, H1 = H2, that is, H1 / L. = H2 / L.

FIG. 3 is a diagram showing the relationship between H1 / L and H2 / L and the hysteresis of the crystal resonator 10. Here, as will be described later, the hysteresis measures the resonance frequency of the crystal unit 10 at each temperature when the temperature drops and the resonance frequency of the crystal unit 10 at each temperature when the temperature rises. The difference between the resonance frequency at the time of temperature drop and the resonance frequency at the time of temperature rise is obtained, and the absolute value of the value is maximized. In this experiment, H1
= H2, the horizontal axis of FIG. 3 represents both H1 / L and H2 / L.

Further, the hysteresis of the crystal unit 10 in FIG. 3 is measured and calculated as follows. In this experiment, H1 / L and H2 / L are 0.025 and 0.05, respectively.
Hysteresis was measured and calculated for eight types of crystal resonators 10 of 0, 0.075, 0.100, 0.130, 0.150, 0.275, and 0.300. The following method was used for the measurement and calculation of the hysteresis of the crystal unit 10 in this experiment.

First, the ambient temperature of the crystal unit 10 is heated from normal temperature (+ 25 ° C.) to + 85 ° C.
Then, while the ambient temperature of the crystal unit 10 is lowered from + 85 ° C. to −40 ° C., the resonance frequency of the crystal unit 10 when the temperature is lowered is measured at a temperature interval of 5 ° C. Next, the crystal unit 10
The resonance frequency of the crystal unit 10 at the time of temperature rise is measured at the temperature at which the resonance frequency is measured at the time of the temperature drop while the ambient temperature is raised from -40 ° C. to + 85 ° C.

Next, the difference frequency which is a value obtained by subtracting the resonance frequency at the time of temperature rise from the resonance frequency at the time of temperature fall with respect to the resonance frequency of the crystal unit 10 under the same temperature condition measured at the time of temperature drop and temperature rise. Ask for. Next, the difference frequency under each temperature condition is normalized with the nominal frequency of the crystal resonator 10 (resonance frequency at room temperature (+ 25 ° C.)) to obtain the normalized frequency under each temperature condition.

Finally, of the normalized frequencies under each temperature condition, a value having the maximum absolute value is obtained, and a value including the sign is extracted as hysteresis of the crystal unit 10. H1 used in this experiment
The above measurement is performed on the quartz resonators 10 having / L and H2 / L of 8 types, and the hysteresis of the quartz resonator 10 at each of H1 / L and H2 / L is calculated.

From FIG. 3, the first metal protrusion 35 that is the distance between the first connection terminal 25 and the first connection portion 45.
The height H1 of the second metal protrusion 3 and the distance between the second connection terminal 26 and the second connection 46
6, the first center 58 of the surface connected to the first connection terminal 25 of the first metal protrusion 35, and the surface connected to the second connection terminal 26 of the second metal protrusion 36. When the distance L between the second center 59 and the second center 59 is in the range of 0.075 ≦ H1 / L ≦ 0.3 and 0.075 ≦ H2 / L ≦ 0.3, the absolute hysteresis of the crystal unit 10 The value satisfies 1.0 ppm or less.

Furthermore, the height H1 of the first metal projection 35 and the height H2 of the second metal projection 36, and the first
Between the first center 58 of the surface connected to the first connection terminal 25 of the metal projection 35 and the second center 59 of the surface connected to the second connection terminal 26 of the second metal projection 36. The distance L is 0.
In the range of 13 ≦ H1 / L ≦ 0.3 and 0.13 ≦ H2 / L ≦ 0.3, the absolute value of the hysteresis of the crystal unit 10 satisfies 0.5 ppm or less.

The hysteresis of the frequency temperature characteristic has an absolute value of 1.0 in order not to deteriorate the performance of the electronic device when the crystal resonator 10 is used as a reference frequency source for an actual product such as an electronic device.
It is preferable that it is ppm or less. In addition, the hysteresis of the frequency temperature characteristic is used when the crystal resonator 10 is used as a reference frequency source in an electronic device with higher frequency accuracy, for example, in a device for synchronizing with a GPS signal, When used for a base station device or a backbone device such as an optical network, the absolute value is preferably 0.5 ppm or less.

As described above, according to the crystal resonator 10 according to the present embodiment, the following effects can be obtained. In the crystal resonator 10, for example, even when stress is generated due to the difference between the expansion or contraction amount of the resonator element 20 and the extension or contraction amount of the bottom plate 31 due to the change in the ambient temperature of the crystal resonator 10, H1 / When L and H2 / L satisfy the relationships of 0.075 ≦ H1 / L ≦ 0.3 and 0.075 ≦ H2 / L ≦ 0.3, the stress transmitted to the resonator element 20 can be reduced. it can. As a result, it is possible to reduce the characteristic variation of the crystal unit 10, for example, the magnitude of hysteresis.

Further, in the crystal resonator 10, for example, even when stress is generated due to a difference between the expansion or contraction amount of the resonator element 20 and the extension or contraction amount of the bottom plate 31 due to a change in the ambient temperature of the crystal resonator 10, H1 / L and H2 / L are 0.13 ≦ H1 / L ≦ 0.3, and 0.
By satisfying the relationship of 13 ≦ H2 / L ≦ 0.3, the stress transmitted to the resonator element 20 can be further reduced. As a result, it is possible to further reduce the characteristic fluctuation of the crystal unit 10, for example, the magnitude of hysteresis.

In addition, this experiment is performed in the range where H1 / L and H2 / L are 0.025 or more and 0.300 or less, and 0.075 ≦ H1 / L ≦ 0.3 and 0.075 ≦ H2 / L ≦ 0. .3, the frequency temperature characteristic hysteresis of the crystal resonator 10 is confirmed to be 1.0 ppm or less. If H / L is within the above range, the hysteresis of the frequency temperature characteristic of the crystal resonator 10 is confirmed. Is obtained in a good state.

Further, in the result of FIG. 3, it can be seen that even if extrapolation of a value larger than 0.30 is performed on H1 / L and H2 / L, the hysteresis of the crystal unit 10 is further reduced, so that H1 / L and H2 / L May be greater than 0.30.

Further, in this experiment, the height H1 of the first metal projection 35 and the height H2 of the second metal projection 36 are used.
However, the present invention is not limited to this, and even if H1 and H2 are different in height,
/ L and H2 / L are 0.13 ≦ H1 / L ≦ 0.3 and 0.13 ≦ H2
If the relationship of /L≦0.3 is satisfied, the characteristic fluctuation of the crystal unit 10, for example, the magnitude of hysteresis can be reduced.

Thus, even if the height H1 of the first metal projection 35 and the height H2 of the second metal projection 36 are different, at least a part of the effect of the first embodiment can be obtained. . That is, the amount of expansion or contraction of the vibrating piece 20 with the change in the ambient temperature of the crystal unit 10 and the bottom plate 3
The stress generated by the difference between the amount of elongation or contraction of the first metal projection 35 and the second metal projection 35
Since it is transmitted to the resonator element 20 through each of the metal projections 36, even if the height H1 of the first metal projection 35 and the height H2 of the second metal projection 36 are different, each of H1 and H2 is , 0.13 ≦ H1 / L ≦ 0.3, and 0.13 ≦ H2 / L ≦ 0.3, the relationship between the first metal protrusion 35 and the second metal protrusion 36 is satisfied. This is because the stress transmitted to the resonator element 20 can be reduced.

In this experiment, the resonance frequency is measured first when the ambient temperature of the crystal unit 10 is lowered. However, the present invention is not limited to this, and the measurement is performed when the ambient temperature of the crystal unit 10 is increased. The resonance frequency may be measured first. Also, the temperature interval to be measured is not limited to the 5 ° C. interval set in the above experiment, but may be any temperature interval at which hysteresis can be calculated.
A temperature interval in the range of 0.5 ° C. or more and 10 ° C. or less may be used. Furthermore, in the said experiment, normal temperature is set to +25 degreeC, However, It is not restricted to this, For example, normal temperature is good also as the range of 0 to +40 degreeC.

In addition to the piezoelectric vibrating piece, a surface acoustic wave element, a MEMS vibrating piece, or the like can be used as the vibrating piece 20. In addition to the piezoelectric single crystal, the resonator element 20 may be made of a piezoelectric material such as piezoelectric ceramics such as lead zirconate titanate, or a silicon substrate. Furthermore, the shape of the resonator element 20 is not particularly limited, and may be a bipod tuning fork, an H-shaped tuning fork, a tripod tuning fork, a comb tooth shape, an orthogonal shape, a prismatic shape, or the like.

As the excitation means of the resonator element 20, one using a piezoelectric effect may be used, or electrostatic driving using a Coulomb force may be used. In addition, the resonator element 20 may be an element for detecting a physical quantity, for example, an element for an inertial sensor (such as an acceleration sensor or a gyro sensor) or a force sensor (such as a tilt sensor).

<Modification>
Next, a crystal resonator 110 as a vibrating device according to a modification of the first embodiment will be described as an example with reference to FIG. In addition, about a common part with the said 1st Embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted and it demonstrates centering on a different part from the said 1st Embodiment.

(Metal protrusion)
FIG. 4 is a cross-sectional view illustrating an outline of the crystal unit 110 as the vibration device according to the modification of the first embodiment. As shown in FIG. 4, the quartz crystal resonator 110 according to the present modification has a first metal projection 51 and a second metal projection 52 that protrude from other portions in a direction parallel to the bottom plate 31 as a substrate. It has the protrusion part 53 which has.

Specifically, the first metal protrusion 51 has a length along the direction intersecting the first direction, for example, the direction orthogonal to the first direction along the first direction from the resonator element 20 toward the bottom plate 31 (hereinafter referred to as the first direction). The thickness of one metal projection 51) may be a first length region of the protrusion 53, and the second length is shorter than the first length, that is, the first length region is narrower than the second length. A narrow portion 54a and a narrow portion 54b, which are regions of a length of. In the first metal protrusion 51, the narrow portion 54a is joined to the first connection terminal 25, and the narrow portion 54a and the narrow portion 54b are arranged in different portions along the first direction.

Similarly, the second metal protrusion 52 has a length along the first direction along the direction intersecting the first direction, for example, a direction orthogonal thereto (hereinafter referred to as the thickness of the second metal protrusion 52). Is a first length region, and a narrow portion 54a that is a second length region that is shorter than the first length, that is, narrower than the first length region. And a narrow portion 54b. In addition,
In the second metal protrusion 52, the narrow portion 54 a is joined to the second connection terminal 26, and the narrow portion 5.
4a and the narrow part 54b are arrange | positioned in the part from which the direction along a 1st direction differs.

In other words, the first metal protrusion 51 and the second metal protrusion 52 are a protrusion 53 serving as a first thickness region that is a first length region and a region having a second length. The narrow portions 54a or the narrow portions 54b, which are regions having a second thickness smaller than the first thickness, are alternately overlapped along the first direction.

In the crystal unit 110 of this modification, the stress generated by the difference between the amount of expansion or contraction of the resonator element 20 with the change in the ambient temperature and the amount of expansion or contraction of the bottom plate 31 as the substrate is the first. The vibration is transmitted to the vibrating piece 20 via the metal protrusion 51 and the second metal protrusion 52. When stress is transmitted to the resonator element 20 through an object having a relatively thick region and a thin region, the thin region absorbs the stress by being distorted more than the thick region.
The stress transmitted to is reduced.

Therefore, the stress generated by the difference between the expansion or contraction amount of the resonator element 20 and the expansion or contraction amount of the bottom plate 31 due to the change in the ambient temperature of the crystal unit 110 is the first metal protrusion 51 and the first By distorting the narrow portions 54 a and 54 b of the two metal protrusions 52, it becomes difficult to be transmitted to the vibrating piece 20.

As described above, according to the crystal resonator 110 according to the present modification, in addition to the effects in the crystal resonator 10 according to the first embodiment, the following effects can be obtained. In the quartz crystal resonator 110 according to this modification, as compared with the first embodiment, the difference between the expansion or contraction amount of the vibration piece 20 and the expansion or contraction amount of the bottom plate 31 due to the change in the ambient temperature. The stress that is generated and transmitted to the resonator element 20 is further reduced by the distortion of the narrow portion 54a and the narrow portion 54b. Therefore, compared with the first embodiment, the characteristic variation of the crystal unit 110, for example, the magnitude of the hysteresis characteristic can be further reduced.

In the present modification, the first metal projection 51 and the second metal projection 52 have the projection 53 and the narrow portions 54a and 54b. However, the first metal projection 51 and the second metal projection 52
In at least one of the metal protrusions, the protrusion 53, the narrow portion 54a, and the narrow portion 54
If at least one of b is present, the same effect as that of the present modification can be obtained for the reason described above.

Second Embodiment
Next, a crystal resonator 120 as a vibration device according to the second embodiment is taken as an example in FIG.
Will be described with reference to FIG. In addition, about a common part with the said 1st Embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted and it demonstrates centering on a different part from the said 1st Embodiment.

(Metal protrusion)
FIG. 5 is a cross-sectional view illustrating an outline of a crystal resonator 120 as a vibration device according to the second embodiment. As shown in FIG. 5, the crystal resonator 120 according to this embodiment includes the first metal protrusion 5.
5 and the 2nd metal projection part 56 are comprised by the metal bump. Metal bumps are gold (Au
), Copper (Cu), silver (Ag), or the like, or an alloy such as lead-free solder or leaded solder.

Further, the first metal protrusion 55 and the second metal protrusion 56 have a length along a direction crossing the first direction, for example, a direction orthogonal to the first direction from the vibrating piece 20 toward the bottom plate 31. Have different parts. That is, the first metal protrusion 55 and the second metal protrusion 56 are
In a direction along the direction intersecting the first direction, a first length region and a second length region shorter than the first length, that is, a thick region and a region thinner than the thick region Have.

The metal bump is formed by a plating method or a bonding method. In the plating method, by forming a predetermined pattern so that the first metal protrusions 55 and the second metal protrusions 56 are formed at predetermined positions of the vibrating piece 20 or the package 30, the metal is plated,
The first metal protrusion 55 and the second metal protrusion 56 of the metal bump can be formed.

Further, in the bonding method, a metal wire (thin wire) such as gold (Au) is used as the vibrating piece 20.
Or it connects to the position in which each of the 1st metal projection part 55 of the package 30 and the 2nd metal projection part 56 is formed, and the wire other than the connected part is cut | disconnected, The 1st metal projection part 55 of a metal bump And the 2nd metal projection part 56 can be formed.

For example, the height of the metal bumps can be easily adjusted by changing the plating time, bonding conditions, etc., so the height H1 of the first metal projection 55 and the height H2 of the second metal projection 56 can be easily adjusted. Can be adjusted.

As described above, according to the crystal resonator 120 according to the present embodiment, the following effects can be obtained in addition to the effects of the crystal resonator 10 according to the first embodiment. In the crystal unit 120 of the present embodiment, the height H1 and the second height of the first metal protrusion 55 are compared with those of the first embodiment.
The height H2 of the metal protrusion 56 can be easily adjusted.

For this reason, the first metal protrusion 55 is changed in accordance with the change in the arrangement of the first connection terminal 25 and the second connection terminal 26 of the resonator element 20 and the arrangement of the first connection part 45 and the second connection part 46 of the package 30. The first center 58 of the surface connected to the first connection terminal 25 and the second metal projection 56.
Even if the distance L between the second center 59 of the surface connected to the second connection terminal 26 and the second connection terminal 26 changes,
The values of H1 / L and H2 / L are 0.13 ≦ H1 / L ≦ 0.3 and 0.13 ≦ H2 /
H1 and H2 can be adjusted so as to satisfy the relationship of L ≦ 0.3. Therefore, for example, it is possible to efficiently manufacture the crystal unit 120 with reduced hysteresis.

In the present embodiment, the first metal protrusion 55 and the second metal protrusion 56 are both metal bumps, but whichever of the first metal protrusion 55 and the second metal protrusion 56 is selected? Even if one of them is a metal bump, at least a part of the above-described effects can be achieved for the above-described reason.

In addition, the connection method of the 1st connection terminal 25 and the 2nd connection terminal 26, the 1st metal projection part 55 and the 2nd metal projection part 56, and the 1st connection part 45 and the 2nd connection part 46 is 1st. Connection part 4
After the first metal projection 55 is formed on the second connection portion 46 and the second metal projection 56 is formed on the second connection portion 46, the first metal projection portion 55 is connected to the first connection terminal 25 and the second metal projection portion is formed. 5
6 may be connected to the second connection terminal 26.

Further, the first connection terminal 25 and the second connection terminal 26, the first metal protrusion 55 and the second connection terminal
The method of connecting the metal projection 56 to the first connection portion 45 and the second connection portion 46 is to form a first metal projection 55 on the first connection terminal 25 and a second metal projection on the second connection terminal 26. Part 56
After forming, the first metal projection 55 is connected to the first connection portion 45 and the second connection portion 4 is connected.
Alternatively, the second metal protrusion 56 may be connected to 6.

<Third Embodiment>
Next, a crystal resonator 130 as a vibrating device according to the third embodiment is taken as an example in FIG.
Will be described with reference to FIG. In addition, about the common part with the said embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted and it demonstrates centering on a different part from the said embodiment.

(Metal protrusion)
FIG. 6 is a cross-sectional view illustrating an outline of a crystal resonator 130 as a vibration device according to the third embodiment. As shown in FIG. 6, in the crystal resonator 130 according to the present embodiment, the first metal protrusion 61 connected to the first connection terminal 25 and the first connection portion 45 has 2 along the first direction.
The second metal protrusion 62 connected to the second connection terminal 26 and the second connection portion 46 has two metal bumps 6 along the first direction.
7 and 68 overlap each other.

The first metal protrusion 61 and the second metal protrusion 62 have a structure in which two metal bumps overlap each other, so that the first metal protrusion 61 and the second metal protrusion 62 each include one metal bump. Since the height of each of the overlapped metal bumps can be individually adjusted as compared with the case where the first metal protrusion 61 and the second metal protrusion 62 are formed.
The height H2 can be adjusted more easily.

As described above, according to the crystal resonator 130 according to the present embodiment, the following effects are obtained in addition to the effects of the crystal resonator 10 according to the first embodiment or the crystal resonator 120 according to the second embodiment. be able to. In the crystal unit 130 of the present embodiment, the first embodiment or the second embodiment
Compared with the embodiment, the height H1 of the first metal projection 61 and the height H of the second metal projection 62
2 can be adjusted more easily.

For this reason, the first metal protrusion 61 is changed in accordance with the change in the arrangement of the first connection terminal 25 and the second connection terminal 26 of the resonator element 20 and the arrangement of the first connection part 45 and the second connection part 46 of the package 30. The first center 58 of the surface connected to the first connection terminal 25 and the second metal projection 62.
Even if the distance L between the second center 59 of the surface connected to the second connection terminal 26 and the second connection terminal 26 changes,
The values of H1 / L and H2 / L are 0.13 ≦ H1 / L ≦ 0.3 and 0.13 ≦ H2 /
H1 and H2 can be adjusted so as to satisfy the relationship of L ≦ 0.3. Therefore, for example, the crystal resonator 130 with reduced hysteresis can be efficiently manufactured.

In this embodiment, an example in which two metal bumps are stacked has been described. However, the present invention is not limited to this, and three or more metal bumps may be stacked. In the present embodiment, the first metal protrusion 61 and the second metal protrusion 62 are both formed by overlapping metal bumps. However, the first metal protrusion 61 and the second metal protrusion 62 are both formed. Either one of 62
Even in a structure in which two or more metal bumps are overlapped, at least a part of the above-described effects can be achieved for the above-described reason.

Moreover, in this embodiment, although the example which piled up two metal bumps in both the 1st metal projection part 61 and the 2nd metal projection part 62 is shown, not only this but 1st metal projection part 61 and If either one of the second metal protrusions 62 overlaps two metal bumps, for the reason described above,
At least some of the effects described above can be achieved.

In addition, the first connecting terminal 25 and the second connecting terminal 26, the first metal protruding portion 61 and the second metal protruding portion 62, and the first connecting portion 45 and the second connecting portion 46 are connected by the first method. Connection 4
5 are formed by overlapping metal bumps 65 and 66 along the first direction, and the second connecting portion 46.
After the metal bumps 67 and 68 are formed so as to overlap in the first direction, the first metal projection 61 is connected to the first connection terminal 25 and the second metal projection 62 is connected to the second connection terminal 26. The method may be used.

Furthermore, the first connection terminal 25 and the second connection terminal 26, the first metal protrusion 61 and the second connection terminal
The method of connecting the metal projection 62 to the first connection portion 45 and the second connection portion 46 is to form the metal bumps 65 and 66 on the first connection terminal 25 so as to overlap in the first direction, and to After the metal bumps 67 and 68 are formed on the connection terminal 26 so as to overlap in the first direction, the first connection portion 45 is formed.
Alternatively, the first metal projection 61 may be connected to the second connection portion 46 and the second metal projection 62 may be connected to the second connection portion 46.

<Fourth embodiment>
Next, a crystal resonator 140 as a vibration device according to the fourth embodiment is taken as an example in FIG.
Will be described with reference to FIG. In addition, about the common part with the said embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted and it demonstrates centering on a different part from the said embodiment.

(Metal protrusion)
FIG. 7 is a cross-sectional view schematically illustrating a crystal resonator 140 as a vibration device according to the fourth embodiment. As shown in FIG. 7, in the crystal resonator 140 according to this embodiment, the first connection terminal 2
The first metal protrusion 71 connected to the first connection portion 45 has a structure in which four metal bumps 73, 74, 75, and 76 overlap in the first direction. 1
The virtual center lines along the direction are overlapped.

That is, a virtual center line along the first direction that is a direction intersecting (orthogonal) with the upper surface 42 of the bottom plate 31 as a substrate of the metal bump 73, a virtual center line along the first direction of the metal bump 74, The virtual center line along the first direction of the metal bump 74 and the virtual center line along the first direction of the metal bump 75 are out of alignment and along the first direction of the metal bump 75. The virtual center line is shifted from the virtual center line along the first direction of the metal bump 76.

Note that the virtual center line of the metal bump described above is a virtual line passing through the center of gravity (centroid) of the shape of each metal bump viewed from above among the virtual lines along the first direction.

In addition, the second metal projection 72 connected to the second connection terminal 26 and the second connection portion 46,
The four metal bumps 83, 84, 85, 86 overlap in the first direction, and the virtual center lines along the first direction of the adjacent metal bumps are shifted as in the case of the first metal protrusion 71. It is piled up.

That is, a virtual center line along a first direction that is a direction intersecting the upper surface 42 of the bottom plate 31 of the metal bump 83, for example, a direction orthogonal thereto, and a virtual center line along the first direction of the metal bump 84; The virtual center line along the first direction of the metal bump 84 and the metal bump 85.
The virtual center line along the first direction of the metal bump 85 is shifted, and the virtual center line along the first direction of the metal bump 85 and the virtual center line along the first direction of the metal bump 86 are shifted. Yes.

The virtual center lines of the metal bumps 73, 74, 75, 76, 83, 84, 85, 86 described above are the center of gravity of the shape of each metal bump as viewed from above among the virtual lines along the first direction. An imaginary line passing through a point (centroid).

As described above, in the first metal protrusion 71, the virtual center line along the first direction of the two adjacent metal bumps is shifted, or in the second metal protrusion 72, the two adjacent metal bumps By making a structure in which a plurality of metal bumps overlap with each other with the virtual center line shifted along the first direction, the size of the metal bumps (thickness in the direction perpendicular to the first direction) is reduced (
The area where the adjacent metal bumps are connected can be reduced without reducing the thickness.

In other words, in a structure using a plurality of metal bumps that overlap in the first direction, the structure in which the virtual center lines of adjacent metal bumps are shifted is compared with the structure in which the virtual center lines of adjacent metal bumps overlap. Thus, it is possible to reduce (decrease) the apparent thickness, that is, the size of the region where the adjacent metal bumps are connected when viewed from above without reducing the size of the metal bumps.

When stress is transmitted to the vibrating piece 20 through an object having a certain thickness, the thinner the thickness, the larger the distortion compared to the thicker case, so that the stress is absorbed. Therefore, the stress transmitted to the vibrating piece 20 is reduced. To do. Therefore, the stress generated by the difference between the amount of expansion or contraction of the resonator element 20 and the amount of expansion or contraction of the bottom plate 31 due to the change in the ambient temperature of the crystal resonator 140 is the first metal protrusion 71 and the first. By distorting the two metal protrusions 72, it is less likely to be transmitted to the resonator element 20 as compared with the third embodiment.

As described above, according to the crystal resonator 140 according to the present embodiment, in addition to the effects of the crystal resonator 10 according to the first embodiment or the crystal resonator 130 according to the third embodiment, the following effects are obtained. be able to. In the crystal resonator 140 of the present embodiment, the first embodiment or the third embodiment
Compared with the embodiment, the vibration piece is generated due to a difference between the amount of expansion or contraction of the resonator element 20 due to the change in the ambient temperature of the crystal resonator 140 and the amount of expansion or contraction of the bottom plate 31 as the substrate. The stress transmitted to 20 is further reduced. Therefore, compared with the first embodiment or the third embodiment, the characteristic fluctuation of the crystal unit 140, for example, the magnitude of hysteresis can be further reduced.

In this embodiment, the first metal projection 71 and the second metal projection 72 are overlapped in a state where the virtual center lines along the first direction of the two adjacent metal bumps are shifted. If at least one of the first metal projection 71 and the second metal projection 72 is overlapped with the virtual center line along the first direction of the two adjacent metal bumps shifted. For the reasons described above, at least some of the effects described above can be achieved.

In the present embodiment, the first metal protrusion 71 and the second metal protrusion 72 are each 4
Although an example in which two metal bumps are stacked is shown, the present invention is not limited to this, and it is sufficient that at least two metal bumps are stacked.

In addition, the connection method of the first connection terminal 25 and the second connection terminal 26, the first metal protrusion 71 and the second metal protrusion 72, the first connection 45 and the second connection 46 is the first method. Connection part 4
5 are formed by overlapping metal bumps 73, 74, 75, and 76 along the first direction, and metal bumps 83, 84, 85, and 86 are stacked on the second connection portion 46 along the first direction. Later, the first metal protrusion 71 may be connected to the first connection terminal 25 and the second metal protrusion 72 may be connected to the second connection terminal 26.

Further, the first connection terminal 25 and the second connection terminal 26, the first metal protrusion 71 and the second connection terminal 26.
A method of connecting the metal protrusion 72 to the first connection portion 45 and the second connection portion 46 is formed by overlapping metal bumps 73, 74, 75, and 76 along the first direction on the first connection terminal 25. In addition, after the metal bumps 83, 84, 85, 86 are formed on the second connection terminal 26 so as to overlap in the first direction, the first metal protrusion 71 is connected to the first connection portion 45 and the second connection portion. Alternatively, the second metal protrusion 72 may be connected to 46.

[Electronics]
Next, the crystal resonators 10, 110, and 120 as the vibration device according to the embodiment of the invention.
, 130, 140 (hereinafter referred to as the crystal unit 10 as a representative) at least one of them
An electronic device to which one is applied will be described with reference to FIGS.

FIG. 8 is a perspective view illustrating a schematic configuration of a mobile (or notebook) personal computer 1100 as an electronic apparatus including the vibration device according to the embodiment of the invention. In FIG. 8, a personal computer 1100 includes a main body portion 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display portion 100. The display unit 1106 is connected to the main body portion 1104 via a hinge structure portion. It is rotatably supported. Such a personal computer 1100 has a built-in crystal resonator 10 having a function as a signal processing timing source.

As described above, a mobile-type (or notebook-type) personal computer 1100 as an example of an electronic device includes the crystal resonator 10 according to an embodiment of the present invention as a timing source, for example. Since a stable frequency signal is output from the crystal unit 10 as a clock source supplied to the personal computer 1100, the operation reliability of the mobile personal computer 1100 can be improved.

FIG. 9 shows a mobile phone 1 as an electronic apparatus including the vibration device according to the embodiment of the invention.
It is a perspective view which shows the outline of a structure of 200 (PHS is also included). In FIG. 9, the mobile phone 1
200 includes a plurality of operation buttons 1202, an earpiece 1204, and a mouthpiece 1206, and the display unit 100 is disposed between the operation buttons 1202 and the earpiece 1204. Such a cellular phone 1200 incorporates the crystal resonator 10 having a function as a signal processing timing source.

As described above, the mobile phone 1200 (including PHS) as an example of the electronic apparatus is provided with the crystal resonator 10 according to the embodiment of the present invention as a timing source, for example, so that the mobile phone 1200 is supplied. Since a stable frequency signal is output from the crystal unit 10 as a clock source to be used, the operation reliability of the mobile phone 1200 can be improved.

FIG. 10 is a perspective view illustrating a schematic configuration of a digital camera 1300 as an electronic apparatus including the vibration device according to the embodiment of the invention. Note that FIG. 10 simply shows connection with an external device. Here, the conventional film camera sensitizes the silver halide photographic film with the light image of the subject, whereas the digital camera 1300 converts the light image of the subject to the CC.
An imaging signal (image signal) obtained by photoelectric conversion by an imaging device such as D (Charge Coupled Device)
Is generated.

On the back of the case 1302 (body) in the digital camera 1300, the display unit 10
0 is provided, and the display unit 1 is configured to perform display based on the image pickup signal from the CCD.
00 functions as a viewfinder that displays the subject as an electronic image. Case 1
A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side (back side in the drawing) of 302.

When the photographer confirms the subject image displayed on the display unit 100 and presses the shutter button 1306, the CCD image pickup signal at that time is transferred to and stored in the memory 1308. In this digital camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302.

As shown in the figure, the video signal output terminal 1312 has a television monitor 1430.
However, a personal computer 1440 is connected to the data communication input / output terminal 1314 as necessary.

Further, the imaging signal stored in the memory 1308 is output to the television monitor 1430 or the personal computer 1440 by a predetermined operation. Such a digital camera 1300 incorporates the crystal resonator 10 having a function as a signal processing timing source.

As described above, the digital camera 1300 as an example of the electronic apparatus includes the crystal unit 10 according to the embodiment of the present invention as a timing source, for example, so that a crystal as a clock source supplied to the digital camera 1300 is obtained. Since a stable frequency signal is output from the vibrator 10, the operation reliability of the digital camera 1300 can be improved.

The electronic device including the crystal unit 10 according to the embodiment of the present invention includes a personal computer (mobile personal computer) 1100 in FIG. 8, a mobile phone 1200 in FIG. 9, and a digital camera 1300 in FIG. For example, the present invention can be applied to an inkjet discharge device (for example, an inkjet printer), a laptop personal computer, a tablet personal computer, a television, a video camera, a video recorder, and the like.

Furthermore, an electronic device including the crystal unit 10 according to the embodiment of the present invention includes a car navigation device, a real-time clock device, a pager, an electronic notebook (including a communication function), an electronic dictionary, a calculator, an electronic game device, a word processor, The present invention can also be applied to workstations, videophones, crime prevention TV monitors, electronic binoculars, POS terminals, and the like.

In addition, an electronic device including the crystal resonator 10 according to the embodiment of the present invention is a medical device (for example, an electronic thermometer, a blood pressure monitor, a blood glucose meter, an electrocardiogram measuring device, an ultrasonic diagnostic device, an electronic endoscope), a fish finder. , Various measuring instruments, instrumentation (eg, vehicle, aircraft, ship instrumentation), flight simulator, head mounted display, motion trace, motion tracking, motion controller, PDR (pedestrian position measurement) electronic equipment, movement The present invention can also be applied to devices for body communication base stations, storage area network devices such as routers and switches, local area network devices, and network transmission devices.

[Moving object]
Next, a moving body to which the crystal resonator 10 as the vibration device according to the embodiment of the invention is applied will be described with reference to FIG.
FIG. 11 is a perspective view schematically showing an automobile 1500 as an example of a moving object. The automobile 1500 is equipped with a crystal resonator 10 as a vibration device according to the present invention. For example, as shown in FIG. 11, an automobile 1500 as a moving body includes an electronic control unit 1510 that incorporates a crystal resonator 10 and controls a tire 1503 and the like mounted on a vehicle body 1501.

In addition, the crystal unit 10 includes a keyless entry, an immobilizer, a car navigation system, a car air conditioner, an antilock brake system (ABS: Antilock Bra
ke System) and airbags.

Furthermore, the crystal unit 10 is a tire pressure monitoring system (TPM).
S: Tire Pressure Monitoring System), engine control, brake system,
It can be widely applied to electronic control units (ECUs) such as battery monitors and body posture control systems for hybrid vehicles and electric vehicles.

As described above, by providing the automobile 1500 as an example of the moving body with the crystal resonator 10 according to the embodiment of the present invention as a timing source, for example, at least one of the automobile 1500 and the electronic control unit 1510 is provided. Since a stable frequency signal is output from the crystal unit 10 as the supplied timing source, the reliability of the operation of at least one of the automobile 1500 and the electronic control unit 1510 can be improved.

The embodiments of the vibrating device, the oscillator, the electronic apparatus, and the moving body of the present invention have been described above based on the drawings. However, the present invention is not limited to the above-described embodiments, and the configuration of each part is the same. Any structure having a function can be substituted. In the present invention,
Other arbitrary components may be added. Moreover, you may combine each embodiment suitably.

DESCRIPTION OF SYMBOLS 10 ... Crystal oscillator, 20 ... Vibrating piece, 21 ... Quartz substrate, 22 ... Upper surface, 23 ... Lower surface, 24 ...
Side surface, 25 ... first connection terminal, 26 ... second connection terminal, 27a ... excitation electrode, 27b ... excitation electrode, 28a ... extraction electrode, 28b ... extraction electrode, 30 ... package, 31 ... bottom plate, 32 ... side wall,
33 ... Seal ring, 34 ... Lid, 35 ... First metal projection, 36 ... Second metal projection, 3
8 ... External connection terminal 39 ... Internal space 40 ... Oscillator circuit 42 ... Upper surface 43 ... Lower surface 45 ...
1st connection part, 46 ... 2nd connection part, 48 ... Pad electrode, 49 ... Internal connection terminal, 51 ... 1st metal projection part, 52 ... 2nd metal projection part, 53 ... Projection part, 54a ... Narrow part, 54b ... Narrow part, 55 ...
First metal protrusion 56, second metal protrusion 58, first center 59, second center 61, first
Metal protrusion 62, second metal protrusion 65, 66, 67, 68 ... metal bump 71, first
Metal protrusion 72, second metal protrusion 73, 74, 75, 76 ... metal bump 83, 84
85, 86 ... Metal bump, 100 ... Display unit, 110 ... Crystal resonator, 120 ... Crystal resonator, 130 ... Crystal resonator, 140 ... Crystal resonator, 1100 ... Personal computer, 1
DESCRIPTION OF SYMBOLS 102 ... Keyboard, 1104 ... Main part, 1106 ... Display unit, 1200 ... Mobile phone, 1202 ... Operation button, 1204 ... Earpiece, 1206 ... Mouthpiece, 1300 ... Digital camera, 1302 ... Case, 1304 ... Light receiving unit, 1306 ... shutter button, 1
308 ... Memory, 1312 ... Video signal output terminal, 1314 ... Input / output terminal, 1430 ...
TV monitor, 1440 ... personal computer, 1500 ... automobile, 1501 ...
Car body, 1503 ... tyre, 1510 ... electronic control unit.

Claims (9)

A resonator element having a first surface and having a first connection terminal and a second connection terminal provided on the first surface;
A substrate having a second surface and having a first connection portion and a second connection portion provided on the second surface;
A first metal protrusion connected to the first connection terminal and the first connection;
A second metal projection connected to the second connection terminal and the second connection;
Including
The height of the first metal protrusion is H1, the height of the second metal protrusion is H2,
The distance between the center of the surface connected to the first connection terminal of the first metal protrusion and the center of the surface connected to the second connection terminal of the second metal protrusion is L. The vibration device is characterized by satisfying the following relationship:
0.075 ≦ H1 / L ≦ 0.3 and 0.075 ≦ H2 / L ≦ 0.3 The vibration device according to claim 1, wherein the following relationship is satisfied.
0.13 ≦ H1 / L ≦ 0.3 and 0.13 ≦ H2 / L ≦ 0.3 At least one of the first metal projection and the second metal projection has a length along a direction crossing the first direction along a first direction from the vibrating piece toward the substrate. 3. The vibration device according to claim 1, comprising: a region having a length of 2 mm; and a region having a second length shorter than the first length. 4. 4. The vibration device according to claim 1, wherein at least one of the first metal protrusion and the second metal protrusion is a metal bump. 5. 5. The vibration device according to claim 4, wherein at least one of the first metal protrusion and the second metal protrusion has a structure in which at least two metal bumps overlap each other. The at least two metal bumps overlap with each other in a state in which a virtual center line intersecting the second surface of one metal bump and a virtual center line intersecting the second surface of the other metal bump are shifted. The vibrating device according to claim 5, wherein: A vibrating device according to any one of claims 1 to 6,
An oscillator having an oscillation circuit disposed on the substrate and configured to oscillate the resonator element. An electronic apparatus comprising the vibration device according to any one of claims 1 to 6. A moving body comprising the vibrating device according to any one of claims 1 to 6.

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