JP2016111302A - Substrate processing apparatus - Google Patents

Abstract

Even when the rotation speed of a substrate is low, it is possible to suppress or prevent the peripheral edge of the lower surface of the substrate from being exposed from a liquid film of a processing solution. A nozzle portion includes a plurality of discharge ports respectively disposed at a plurality of positions having different horizontal distances from a rotation axis. The nozzle portion 23 is disposed between the lower surface of the substrate W and the spin base 8. The plurality of discharge ports are outward with respect to the lower surface of the substrate W and the first discharge port 49A that discharges the processing liquid in the first discharge direction D1 inclined to the downstream side in the rotation direction Dr with respect to the lower surface of the substrate W. And a second discharge port for discharging the processing liquid in the inclined second discharge direction. The vertical cross section 40 of the nozzle portion 23 includes an upstream end 41 a disposed on the most upstream side in the rotation direction Dr in the vertical cross section 40. The upstream end 41 a is disposed above the intermediate height Hm between the lower surface of the substrate W and the spin base 8. [Selection] Figure 9

Description

  The present invention relates to a substrate processing apparatus for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

  Patent Document 1 discloses a single-wafer type substrate processing apparatus that processes substrates one by one. The substrate processing apparatus includes a spin chuck that rotates while holding the substrate horizontally, and a lower nozzle that discharges the processing liquid toward the center of the lower surface of the substrate held by the spin chuck. The processing liquid supplied from the lower nozzle to the lower surface of the substrate spreads outward in the radial direction along the lower surface of the substrate due to the centrifugal force generated by the rotation of the substrate. Thereby, the processing liquid is supplied to the entire lower surface of the substrate.

JP 2011-2111094 A

The processing liquid supplied from the lower nozzle to the lower surface of the substrate spreads outward in the radial direction by the centrifugal force generated by the rotation of the substrate. For this reason, when the rotation speed of the substrate is low, the centrifugal force applied to the processing liquid is small, so that the processing liquid is difficult to spread to the peripheral edge of the lower surface of the substrate.
However, the processing liquid may be supplied to the lower surface of the substrate while the substrate is rotating at a low rotation speed. For example, in order to reduce the consumption of the processing liquid, the rotation speed of the substrate may be lowered to increase the time until the processing liquid is discharged from the lower surface of the substrate. In this case, since the processing liquid is difficult to spread to the peripheral edge of the lower surface of the substrate, the substrate may be exposed from the liquid film of the processing liquid, particularly at the lower peripheral edge of the substrate. If the lower surface of the substrate is partially exposed, the cleanliness of the substrate is reduced due to the generation of particles, and the uniformity of processing is reduced.

  Accordingly, one of the objects of the present invention is to suppress or prevent the peripheral edge of the lower surface of the substrate from being exposed from the liquid film of the processing liquid even when the rotation speed of the substrate is low.

  In order to achieve the above object, according to the first aspect of the present invention, there is provided a substrate holding device for rotating the substrate in a rotation direction that is a fixed direction around a vertical rotation axis passing through a central portion of the substrate while holding the substrate horizontally. And a plurality of discharge ports respectively disposed at a plurality of positions at different horizontal distances from the rotation axis, and are disposed between the lower surface of the substrate and the substrate holding means, in a horizontal longitudinal direction. The substrate processing apparatus includes a nozzle portion that extends and discharges a processing liquid from the plurality of discharge ports toward the lower surface of the substrate.

  The plurality of discharge ports are a plurality of first discharge ports that discharge a processing liquid in a first discharge direction inclined to the downstream side in the rotation direction with respect to the lower surface of the substrate, and outward from the lower surface of the substrate And a second discharge port that discharges the processing liquid in a second discharge direction inclined to the top. The vertical cross section of the nozzle portion orthogonal to the longitudinal direction includes an upstream end disposed on the most upstream side in the rotation direction in the vertical cross section. The upstream end is disposed above a height intermediate between the lower surface of the substrate and the substrate holding means. The longitudinal direction may be an orthogonal direction orthogonal to the rotation axis, or a horizontal direction parallel to the orthogonal direction. When the upstream end is a vertical line, the upstream end means the center of the vertical line in the vertical direction.

  According to this configuration, the nozzle portion discharges the processing liquid from the first discharge port in the first discharge direction toward the first liquid deposition position in the lower surface of the substrate. The first liquid landing position is a position downstream in the rotation direction from the first discharge port. The first discharge direction is a direction from the first discharge port toward the first liquid deposition position, and is inclined downstream in the rotation direction with respect to the lower surface of the substrate. Therefore, compared with the case where the first discharge direction is a direction perpendicular to the lower surface of the substrate, it is possible to reduce the impact when the processing liquid discharged from the first discharge port has landed on the lower surface of the substrate.

  Further, the nozzle portion discharges the processing liquid from the second discharge port in the second discharge direction toward the second liquid deposition position in the lower surface of the substrate. The second liquid landing position is a position outside the second discharge port. The second discharge direction is a direction from the second discharge port toward the second liquid deposition position, and is inclined outward with respect to the lower surface of the substrate. Since the processing liquid discharged from the second discharge port has kinetic energy including a radial component, it flows outward along the lower surface of the substrate.

  The processing liquid on the lower surface of the rotating substrate receives a centrifugal force. Therefore, the processing liquid spreads outward along the lower surface of the substrate while moving in the rotation direction together with the lower surface of the substrate. The processing liquid discharged from the second discharge port flows outward along the lower surface of the substrate by kinetic energy. The processing liquid that moves in the rotation direction together with the lower surface of the substrate is guided outward by this flow in addition to the centrifugal force. Therefore, even when the rotation speed of the substrate is low, the processing liquid discharged from the first discharge port easily reaches the peripheral edge of the lower surface of the substrate. Therefore, it can suppress or prevent that the lower surface peripheral part of a board | substrate exposes from the liquid film of a process liquid. Thereby, an increase in particles and a decrease in processing uniformity can be suppressed or prevented.

  Further, since the upstream end provided in the vertical section of the nozzle portion is disposed above the intermediate height between the lower surface of the substrate and the substrate holding means, the processing liquid dropped from the lower surface of the substrate and the substrate holding means It is difficult for the processing liquid to pass between the lower surface of the substrate and the nozzle portion (see FIG. 9). Therefore, it is difficult for the processing liquid whose activity and temperature have changed to adhere to the lower surface of the substrate. Therefore, the lower surface of the substrate can be processed efficiently.

The bottom surface of the substrate before the treatment liquid is supplied may be either hydrophilic or hydrophobic. The processing liquid supplied to the substrate may be a liquid (for example, an etching liquid) that changes the lower surface of the substrate to be hydrophobic.
When an etching solution such as hydrofluoric acid is supplied to a silicon substrate on which a natural oxide film (silicon oxide film) of silicon is formed as a surface layer, the natural oxide film is removed and the silicon substrate changes to hydrophobic. The contact angle between the silicon substrate from which the natural oxide film has been removed (hydrogen-terminated silicon substrate) and water is about 70 degrees. “Hydrophobic” means that the contact angle of water with the substrate is, for example, greater than 70 degrees.

  When the lower surface of the substrate before the processing liquid is supplied is hydrophobic, or when the lower surface of the substrate changes to hydrophobic during processing, the lower surface of the substrate is likely to be partially exposed from the liquid film of the processing liquid. . In the embodiment, since the plurality of discharge ports including the first discharge port and the second discharge port are provided in the nozzle portion, the peripheral surface of the lower surface of the substrate is exposed from the liquid film of the processing liquid even in these cases. Can be suppressed or prevented.

  In the embodiment, the substrate holding means includes a spin base having a horizontal upper surface, a plurality of chuck pins for horizontally holding the substrate above the spin base, and the spin base and the plurality of chuck pins around the rotation axis. And a spin motor that rotates the motor. In this case, the nozzle part is disposed between the lower surface of the substrate and the upper surface of the spin base.

According to a second aspect of the present invention, the nozzle portion extends from the main flow path to the plurality of discharge ports, the main flow path guiding the processing liquid supplied to each of the plurality of discharge ports, and the main flow The substrate processing apparatus according to claim 1, further comprising a plurality of branch flow paths that respectively supply the processing liquid in the channel to the plurality of discharge ports.
According to this configuration, the processing liquid in the main channel is supplied to each of the plurality of branch channels. And the process liquid in a some branch flow path is supplied to a some discharge port, respectively. Therefore, the processing liquid can be discharged from all the discharge ports by simply supplying the processing liquid to the main channel. As described above, since a part of the flow path (main flow path) for supplying the treatment liquid to the plurality of discharge ports is shared, the structure for supplying the treatment liquid to the plurality of discharge openings can be simplified.

  The invention according to claim 3 is the substrate processing apparatus according to claim 2, wherein an opening area of the second discharge port is larger than at least one opening area of the plurality of first discharge ports. The second discharge port may have an opening area larger than any of the first discharge ports. Alternatively, the plurality of first discharge ports may include a discharge port having an opening area smaller than the second discharge port and a discharge port having an opening area larger than or equal to the second discharge port.

  According to this configuration, the processing liquid in the same flow path (main flow path) is supplied to the first discharge port and the second discharge port. The opening area of the second discharge port that discharges the processing liquid to the outside is larger than the opening area of the first discharge port. Accordingly, the second discharge port discharges the processing liquid at a larger flow rate than the first discharge port. Therefore, even when the rotation speed of the substrate is low, the processing liquid discharged from the first discharge port easily reaches the peripheral edge of the lower surface of the substrate. Furthermore, the processing liquid on the lower surface of the substrate can be more reliably guided outward.

According to a fourth aspect of the present invention, the plurality of first discharge ports are arranged at an outer side of the rotation axis and at an outer side of the intermediate discharge port, and the intermediate discharge port. The substrate processing apparatus according to claim 2, further comprising an outer discharge port having an opening area larger than an opening area of the outlet.
According to this configuration, the processing liquid in the same flow path (main flow path) is supplied to the intermediate discharge port and the outer discharge port. The outer discharge port is disposed outside the intermediate discharge port, and the opening area of the outer discharge port is larger than the opening area of the intermediate discharge port. Therefore, a larger amount of processing liquid is supplied to the lower surface peripheral portion side of the substrate. Therefore, it is possible to increase the amount of the processing liquid guided outward. Thereby, it can suppress or prevent that the lower surface peripheral part of a board | substrate exposes from the liquid film of a process liquid.

  According to a fifth aspect of the present invention, the plurality of first discharge ports are formed so as to discharge the processing liquid toward a first liquid deposition position in the lower surface of the substrate that is separated from the rotation axis. 5. The method according to claim 2, further comprising an inner discharge port that discharges the processing liquid so that the center of the lower surface of the substrate is included in a range that spreads when the processing liquid reaches the lower surface of the substrate. It is a substrate processing apparatus of description.

  According to this configuration, the nozzle portion discharges the processing liquid from the first discharge port toward the first liquid landing position in the lower surface of the substrate. The first liquid landing position is a position outside the rotation axis and is away from the rotation axis. The processing liquid discharged from the first discharge port spreads along the lower surface of the substrate with the momentum that has reached the first liquid landing position, and forms a liquid film that covers the first liquid landing position. The center of the lower surface of the substrate is covered with the liquid film when the processing liquid discharged from the first discharge port reaches the lower surface of the substrate. Thereby, the processing liquid is also supplied to the center of the lower surface of the substrate.

  Since the substrate rotates around a vertical rotation axis passing through the center of the substrate, a large centrifugal force is not applied to the liquid at the center of the lower surface of the substrate. Therefore, liquid may remain at the center of the lower surface of the substrate, and particles may be generated at the center of the lower surface of the substrate. According to this configuration, the amount of the processing liquid supplied to the center of the lower surface of the substrate can be reduced as compared with the case where the processing liquid is discharged toward the center of the lower surface of the substrate. Thereby, the center of the lower surface of the substrate can be processed while suppressing or preventing the treatment liquid from remaining at the center of the lower surface of the substrate.

According to a sixth aspect of the present invention, the plurality of first discharge ports are disposed outside the inner discharge port, the inner discharge port disposed outside the rotation axis, and the inner discharge port. The substrate processing apparatus according to claim 5, further comprising an intermediate discharge port having an opening area smaller than an opening area of the discharge port.
According to this configuration, the processing liquid in the same flow path (main flow path) is supplied to the inner discharge port and the intermediate discharge port. The opening area of the inner discharge port is larger than the opening area of the intermediate discharge port. Therefore, the inner discharge port discharges the processing liquid at a larger flow rate than the intermediate discharge port. The treatment liquid discharged from the inner discharge port forms a larger liquid film on the lower surface of the substrate when it reaches the lower surface of the substrate. Therefore, the processing liquid can be reliably supplied to the center of the lower surface of the substrate.

The invention according to claim 7 is characterized in that at least one of the plurality of branch channels (preferably each of the plurality of branch channels) is shorter than the radius of the cylindrical main channel. 6. The substrate processing apparatus according to claim 6.
The upstream end of each branch flow path is connected to the main flow path, and the downstream end of each branch flow path is connected to the corresponding discharge port. The length from the upstream end of the branch channel to the downstream end of the branch channel is shorter than the radius of the cylindrical main channel. If the branch flow path is long, the processing liquid may remain in the branch flow path after the discharge of the processing liquid is stopped, and particles may be generated in the branch flow path. Therefore, the generation of particles can be suppressed or prevented by shortening the branch flow path.

The invention according to claim 8 is the substrate processing apparatus according to claim 1, wherein the nozzle portion further includes an inclined surface in which at least one of the plurality of ejection openings opens.
According to this structure, the inclined surface inclined with respect to the horizontal surface is provided in the nozzle part. At least one of the plurality of discharge ports is open at an inclined surface. Therefore, the inclination angle of the first discharge direction with respect to the vertical direction can be increased as compared with the case where the discharge surface where at least one of the plurality of discharge ports opens is a horizontal plane. Thereby, the impact at the time of the process liquid discharged from the 1st discharge port landing on the lower surface of a board | substrate can further be reduced. Furthermore, the liquid on the inclined surface flows down along the inclined surface by gravity. Therefore, the processing liquid discharged from the plurality of discharge ports and the processing liquid adhering to the inclined surface of the nozzle part hardly remain on the inclined surface of the nozzle part. Therefore, it is possible to suppress or prevent the generation of particles on the inclined surface of the nozzle portion.

  According to a ninth aspect of the present invention, the vertical cross section of the nozzle portion has a length in the vertical direction that decreases toward the upstream in the rotational direction, and a triangular upstream end provided with the upstream end. The substrate processing apparatus according to claim 1, further comprising: The vertical cross section of the nozzle portion may further include a triangular downstream end portion whose length in the vertical direction decreases toward the downstream in the rotation direction. The angle formed by the linear upper edge of the upstream end portion and the linear lower edge of the upstream end portion may be any of an acute angle, a right angle, and an obtuse angle. The upstream end, the upper edge, and the lower edge may intersect each other or may be connected to the upstream side via a convex arc. The same applies to the downstream end.

  According to this configuration, since the upstream end portion provided in the vertical section of the nozzle portion has a triangular shape protruding upstream, the fluid resistance (resistance from gas or liquid) applied to the nozzle portion during the rotation of the substrate can be reduced. . Furthermore, since at least one of the upper edge and the lower edge of the upstream end portion is inclined with respect to the horizontal plane, the processing liquid hardly remains at the upstream end portion. Therefore, the generation of particles due to the liquid residue can be suppressed or prevented.

The invention according to claim 10 is the substrate processing apparatus according to claim 1, wherein the vertical section of the nozzle portion is streamlined.
According to this configuration, since the vertical cross section of the nozzle portion is streamlined, the fluid resistance applied to the nozzle portion during the rotation of the substrate can be reduced. Furthermore, since a smooth fluid flow is formed around the nozzle portion and generation of vortex is suppressed, the processing liquid hardly remains on the outer surface of the nozzle portion. Therefore, the generation of particles due to the liquid residue can be suppressed or prevented.

It is the schematic diagram which looked at the inside of the processing unit with which the substrate processing apparatus concerning one embodiment of the present invention was equipped horizontally. It is a typical side view showing a spin chuck and a lower nozzle. It is a typical top view which shows a spin chuck and a lower nozzle. It is a typical top view of a lower nozzle. It is the figure which expanded a part of FIG. It is the fragmentary sectional view which looked at the lower nozzle in the longitudinal direction of the nozzle part. It is sectional drawing of the lower nozzle which follows the VII-VII line shown in FIG. It is the figure which expanded a part of FIG. It is a figure which shows the vertical cross section of the nozzle part which follows the IX-IX line | wire shown in FIG. It is a typical top view which shows the state which the nozzle part is discharging the process liquid. It is a typical side view which shows the state in which the nozzle part is discharging the process liquid. It is process drawing for demonstrating the process example of the board | substrate performed with a substrate processing apparatus. It is a figure which shows the vertical cross section of the nozzle part which concerns on other embodiment of this invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic view of the inside of a processing unit 2 provided in a substrate processing apparatus 1 according to an embodiment of the present invention viewed horizontally.
The substrate processing apparatus 1 is a single-wafer type apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes a processing unit 2 that processes a substrate W with a processing liquid, a transfer robot (not shown) that transfers the substrate W to the processing unit 2, and a control device 3 that controls the substrate processing apparatus 1. . The processing unit 2 includes a spin chuck 7 that rotates the substrate W around a vertical rotation axis A1 that passes through the central portion of the substrate W while holding the substrate W horizontally, and a chamber 4 that houses the spin chuck 7 and the like.

  The chamber 4 includes a box-shaped partition wall 5 provided with a loading / unloading port 5a through which the substrate W passes, and a shutter 6 for opening and closing the loading / unloading port 5a. The shutter 6 is movable with respect to the partition wall 5 between an open position where the carry-in / out port 5a is opened and a closed position (position shown in FIG. 1) where the carry-in / out port 5a is closed. The hand H1 of the transfer robot loads the substrate W into the chamber 4 through the loading / unloading exit 5a, and unloads the substrate W from the chamber 4 through the loading / unloading exit 5a.

The spin chuck 7 includes a disc-shaped spin base 8 held in a horizontal posture, a plurality of chuck pins 9 protruding upward from the peripheral edge of the upper surface 8 a of the spin base 8, and the plurality of chuck pins 9 formed on the substrate W. A chuck opening / closing unit 11 for opening and closing the plurality of chuck pins 9 between a closed position for holding the substrate W and an open position for releasing the holding of the substrate W by the plurality of chuck pins 9.
The spin chuck 7 further rotates the spin base 8 and the chuck pin 9 about the rotation axis A1 by rotating the spin shaft 12 and the spin shaft 12 extending downward from the center of the spin base 8 along the rotation axis A1. A spin motor 13 to be operated. The control device 3 controls the spin motor 13 to rotate the substrate W in the rotation direction Dr that is a constant direction around the rotation axis A1.

  As shown in FIGS. 2 and 3, the spin base 8 includes a horizontal circular upper surface 8 a having an outer diameter larger than the outer diameter of the substrate W. The chuck pin 9 includes a support pin 9a that supports the lower surface peripheral portion of the substrate W above the spin base 8, and a grip pin 9b that is pressed against the peripheral portion of the substrate W supported by the support pin 9a. The support pin 9a and the grip pin 9b may be provided on the same member, or may be provided on separate members.

  As shown in FIG. 1, the substrate processing apparatus 1 is interposed in a lower nozzle 14 that discharges a processing liquid such as a chemical liquid or a rinsing liquid upward, a chemical liquid pipe 15 that guides the chemical liquid to the lower nozzle 14, and a chemical liquid pipe 15. A chemical liquid valve 16, a rinse liquid pipe 17 for guiding the rinse liquid to the lower nozzle 14, and a rinse liquid valve 18 interposed in the rinse liquid pipe 17. An example of the chemical solution is hydrofluoric acid which is one of etching solutions. An example of the rinse liquid is pure water (deionized water).

As shown in FIG. 1, the substrate processing apparatus 1 further includes a suction device 22 that generates a suction force for sucking the processing liquid in the lower nozzle 14, and a suction pipe that guides the processing liquid in the lower nozzle 14 to the suction device 22. 19 and a suction valve 21 interposed in the suction pipe 19. The suction device 22 may be a pump, an aspirator, or a device other than these.
As shown in FIG. 3, the lower nozzle 14 includes two nozzle portions 23 provided with a plurality of discharge ports 49 for discharging the processing liquid, and a base portion 24 that supports the two nozzle portions 23. The base portion 24 has a cylindrical shape coaxial with the rotation axis A1. The base portion 24 is disposed at a position facing the lower surface center portion of the substrate W. As shown in FIG. 2, the base portion 24 protrudes upward from the central portion of the upper surface 8 a of the spin base 8. The nozzle part 23 is disposed above the base part 24. The nozzle portion 23 is disposed between the lower surface of the substrate W and the upper surface 8 a of the spin base 8.

  As shown in FIG. 4, each nozzle portion 23 extends from the base portion 24 in the horizontal longitudinal direction DL. The longitudinal direction DL is a horizontal direction parallel to the first virtual straight line V1. The two nozzle portions 23 extend from the base portion 24 in directions opposite to each other. The two nozzle portions 23 are respectively disposed on both sides of the first imaginary straight line V1 orthogonal to the rotation axis A1. Each nozzle part 23 is separated from the first virtual straight line V1 and the rotation axis A1, and does not intersect the first virtual straight line V1 and the rotation axis A1. The two nozzle portions 23 have a point-symmetric shape with respect to the rotation axis A1. When one nozzle portion 23 is rotated 180 degrees around the rotation axis A1, the two nozzle portions 23 overlap each other.

  As shown in FIG. 4, the nozzle portion 23 includes a root portion that overlaps the base portion 24 in a plan view, a tip portion that is disposed radially outward from the base portion 24, and an intermediate portion that extends from the root portion to the tip portion. Including. The distance L1 in the longitudinal direction DL from the second virtual straight line V2 orthogonal to both the rotation axis A1 and the first virtual straight line V1 to the tip of the nozzle portion 23 is the longitudinal direction from the second virtual straight line V2 to the root of the nozzle portion 23. It is larger than the DL distance L2. The distance in the radial direction from the rotation axis A1 to the tip of the nozzle portion 23 is smaller than the radius of the substrate W.

  As shown in FIG. 6, the lower nozzle 14 includes two processing liquid supply paths 25 that supply the processing liquid to the plurality of ejection ports 49. The two processing liquid supply paths 25 correspond to the two nozzle portions 23, respectively. One processing liquid supply path 25 supplies the processing liquid to a plurality of discharge ports 49 provided in one nozzle part 23. The other processing liquid supply path 25 supplies the processing liquid to a plurality of discharge ports 49 provided in the other nozzle portion 23.

As shown in FIG. 6, each processing liquid supply path 25 includes a downstream portion 29 provided in the nozzle portion 23 and an upstream portion 26 provided in the base portion 24. The upstream portion 26 and the downstream portion 29 are connected to each other at a position upstream from the plurality of discharge ports 49.
As shown in FIG. 6, the two upstream portions 26 are coupled within the base portion 24 and share a part of each other. That is, the two upstream portions 26 include one sharing portion 27 provided in the base portion 24 and two individual portions 28 branched from the sharing portion 27. The shared portion 27 extends in the vertical direction along the rotation axis A1. The two individual parts 28 extend upward from the shared part 27.

  FIG. 7 is a cross-sectional view of the lower nozzle 14 taken along the line VII-VII shown in FIG. FIG. 8 is an enlarged view of a part of FIG. FIG. 9 shows a vertical section 40 of the nozzle portion 23 along the line IX-IX shown in FIG. 4, that is, a vertical section 40 of the nozzle portion 23 orthogonal to the longitudinal direction DL of the nozzle portion 23. The lower nozzle 14 is made of a synthetic resin having chemical resistance such as PTFE (polytetrafluoroethylene). The shape of the vertical section 40 of the nozzle portion 23 is uniform from the root of the nozzle portion 23 to the front of the upstream inclined portion 47 (see FIG. 5).

  As shown in FIGS. 8 and 9, the downstream portion 29 of each processing liquid supply path 25 includes a main flow path 31 that guides the processing liquid supplied to the plurality of discharge ports 49, and a plurality of processing liquids in the main flow path 31. And a plurality of branch flow paths 32 to be supplied to the discharge ports 49. As shown in FIG. 9, the plurality of branch flow paths 32 include a plurality of first branch flow paths 32a connected to the plurality of first discharge ports 49A, respectively. As shown in FIG. 8, the plurality of branch channels 32 further include a second branch channel 32b connected to the second discharge port 49B.

  As shown in FIG. 7, the main channel 31 has a cylindrical shape extending in the longitudinal direction DL in the nozzle portion 23. The main flow path 31 is disposed between the plug 33 attached to the root portion of the nozzle portion 23 and the tip portion of the nozzle portion 23. The flow path area of the main flow path 31 (the area of the cross section perpendicular to the fluid flow direction) is larger than the flow area of any branch flow path 32. As shown in FIG. 9, the radius R1 of the cross section of the main flow path 31 is larger than the flow path length of any branch flow path 32 (the length from the upstream end of the branch flow path 32 to the downstream end of the branch flow path 32). large. The first branch channel 32a is longer than the second branch channel 32b.

  As shown in FIGS. 8 and 9, the plurality of branch flow paths 32 are connected to a plurality of discharge ports 49, respectively. The upstream end of the branch flow path 32 is connected to the main flow path 31 at a position above a horizontal central plane C1 passing through the center of the vertical section 40 in the vertical direction. The downstream end of the branch flow path 32 is connected to any one of the plurality of discharge ports 49. As shown in FIG. 9, the first branch flow path 32a extends obliquely upward from the main flow path 31 toward the downstream in the rotation direction Dr. As shown in FIG. 7, the second branch flow path 32b extends obliquely upward from the main flow path 31 in a direction away from the rotation axis A1. The second branch flow path 32b is disposed downstream of the first branch flow path 32a in the processing liquid flow direction.

  As shown in FIG. 9, the outer surface of the nozzle portion 23 includes an upper upstream inclined surface 34 that extends obliquely upward toward the downstream in the rotational direction Dr, and an upper horizontal surface 35 that extends horizontally from the upper upstream inclined surface 34 in the rotational direction Dr. And an upper downstream inclined surface 36 extending obliquely downward from the upper horizontal surface 35 toward the downstream in the rotation direction Dr. The outer surface of the nozzle portion 23 is further rotated with a lower upstream inclined surface 37 extending obliquely downward toward the downstream in the rotational direction Dr, a lower horizontal plane 38 extending horizontally from the lower upstream inclined surface 37 in the rotational direction Dr, and And a lower downstream inclined surface 39 extending obliquely upward from the lower horizontal surface 38 toward the downstream in the direction Dr.

  As shown in FIG. 9, the upper upstream inclined surface 34 is longer than the upper downstream inclined surface 36 in the lateral direction Ds (horizontal direction orthogonal to the longitudinal direction DL). Similarly, the lower upstream inclined surface 37 is longer in the short direction Ds than the lower downstream inclined surface 39. The upper upstream inclined surface 34 and the lower upstream inclined surface 37 intersect at the most upstream position (upstream end 41 a) in the vertical cross section 40 of the nozzle portion 23. The upper downstream inclined surface 36 and the lower downstream inclined surface 39 intersect at the most downstream position (downstream end 42 a) in the vertical cross section 40 of the nozzle portion 23.

  As shown in FIG. 9, the vertical cross section 40 of the nozzle portion 23 includes a triangular upstream end 41 that is convex upstream in the rotational direction Dr, and a triangular downstream end 42 that is convex downstream in the rotational direction Dr. Including. The upper edge of the upstream end portion 41 is a part of the upper upstream inclined surface 34, and the lower edge of the upstream end portion 41 is a part of the lower upstream inclined surface 37. Similarly, the upper edge of the downstream end portion 42 is a part of the upper downstream inclined surface 36, and the lower edge of the downstream end portion 42 is a part of the lower downstream inclined surface 39. An angle (first angle θ1) formed by the upper edge of the upstream end portion 41 and the lower edge of the upstream end portion 41 is an acute angle. An angle (second angle θ2) formed by the upper edge of the downstream end portion 42 and the lower edge of the downstream end portion 42 is an obtuse angle. The first angle θ1 is smaller than the second angle θ2.

  As shown in FIG. 9, the upstream end portion 41 includes an upstream end 41 a that is disposed on the most upstream side in the vertical cross section 40 of the nozzle portion 23. The downstream end portion 42 includes a downstream end 42 a that is disposed on the most downstream side in the vertical cross section 40 of the nozzle portion 23. The thickness (the length in the vertical direction) of the upstream end portion 41 decreases as the upstream end 41a is approached. The thickness (the length in the vertical direction) of the downstream end portion 42 decreases as it approaches the downstream end 42a.

  As shown in FIG. 9, the upstream end 41a is disposed at a height equal to the horizontal center plane C1 passing through the center of the vertical section 40 in the vertical direction. The upstream end 41 a is close to the lower surface side of the substrate W. That is, the upstream end 41 a is disposed above the intermediate height Hm that is intermediate between the lower surface of the substrate W and the upper surface 8 a of the spin base 8. The downstream end 42a is disposed at the same height as the upstream end 41a. Accordingly, the downstream end 42a is disposed above the intermediate height Hm.

  As shown in FIG. 8, the outer surface of the nozzle portion 23 includes a vertical surface 45 perpendicular to the longitudinal direction DL, an upper inclined surface 44 extending obliquely upward from the vertical surface 45, and a lower inclined extending obliquely downward from the vertical surface 45. Surface 46. In FIG. 8, a horizontal center plane C1 passing through the upstream end 41a and the downstream end 42a (see FIG. 9) is indicated by a one-dot chain line. The upstream end 41 a and the downstream end 42 a are disposed at a height between the upper end and the lower end of the vertical surface 45.

  As shown in FIG. 5, the outer surface of the nozzle portion 23 further includes an upstream inclined portion 47 that obliquely extends from the vertical surface 45 toward the upstream side in the rotational direction Dr toward the second virtual straight line V2, and a second virtual straight line V2. And a downstream inclined portion 48 extending obliquely from the vertical surface 45 to the downstream side in the rotational direction Dr. The upstream inclined portion 47 is longer than the downstream inclined portion 48 in both the rotational direction Dr and the longitudinal direction DL.

As shown in FIG. 5, the plurality of discharge ports 49 provided in the same nozzle portion 23 include a plurality of first discharge ports 49A and one second discharge port 49B. The first discharge port 49 </ b> A opens at the upper downstream inclined surface 36. The second discharge port 49 </ b> B opens at the upper inclined surface 44.
As shown in FIG. 5, the plurality of first discharge ports 49 </ b> A are arranged in the longitudinal direction DL of the nozzle portion 23 with an interval therebetween. The plurality of first discharge ports 49A are arranged closer to the second virtual straight line V2 than the second discharge ports 49B. The plurality of first discharge ports 49A are arranged at positions away from the second virtual straight line V2 in the longitudinal direction DL. The plurality of first discharge ports 49A are arranged closer to the first virtual straight line V1 than the second discharge ports 49B. The plurality of first discharge ports 49A are disposed downstream of the second discharge ports 49B in the rotation direction Dr.

As shown in FIG. 5, the plurality of first discharge ports 49A are disposed radially outward from the inner discharge port 49a, with one inner discharge port 49a disposed radially outward of the rotation axis A1. A plurality of (for example, 34) intermediate discharge ports 49b and a plurality of (for example, five) outer discharge ports 49c arranged radially outward from the plurality of intermediate discharge ports 49b are included.
As shown in FIG. 5, the opening area of the inner discharge port 49a is larger than the opening area of the intermediate discharge port 49b. Similarly, the opening area of the outer discharge port 49c is larger than the opening area of the intermediate discharge port 49b. The opening area of the inner discharge port 49a and the opening area of the outer discharge port 49c are equal to each other. The opening area of the second discharge port 49B is larger than the opening area of the intermediate discharge port 49b. The opening area of the second outlet 49B is equal to the opening area of both the inner outlet 49a and the outer outlet 49c.

  As shown in FIG. 9, the first discharge port 49A discharges the processing liquid in the first discharge direction D1 toward the first liquid deposition position P1 in the lower surface of the substrate W. The first liquid landing position P1 is a position downstream of the first discharge port 49A in the rotation direction Dr. The first liquid deposition position P1 is a position away from the center of the lower surface of the substrate W. The first discharge direction D1 is an obliquely upward direction from the first discharge port 49A toward the first liquid landing position P1. The first discharge direction D1 is inclined to the downstream side in the rotation direction Dr with respect to the lower surface of the substrate W.

  As shown in FIG. 10, the first discharge port 49A and the first liquid landing position P1 are arranged in the short direction Ds in plan view. In other words, the first discharge port 49A and the first liquid deposition position P1 are aligned in a tangential direction of a virtual circle having a center on the rotation axis A1 in a plan view (when viewed in a direction perpendicular to the upper surface of the substrate W). It is out. The first ejection direction D1 is a direction parallel to the second virtual straight line V2 in plan view. 49 A of 1st discharge ports discharge a process liquid in the direction in alignment with the rotation direction Dr of the board | substrate W by planar view.

  As shown in FIG. 9, the processing liquid ejected from the first ejection port 49A spreads along the lower surface of the substrate W with the momentum applied to the first landing position P1, and covers the first landing position P1. A film F1 is formed. As shown in FIG. 10, the first liquid deposition position P1 is a position away from the center (rotation axis A1) of the lower surface of the substrate W. The center of the lower surface of the substrate W is covered with the liquid film F1 when the processing liquid discharged from the inner discharge port 49a reaches the lower surface of the substrate W. Therefore, even if the first liquid deposition position P1 is away from the center of the lower surface of the substrate W, the processing liquid discharged from the inner discharge port 49a is also supplied to the center of the lower surface of the substrate W.

  As shown in FIG. 11, the second discharge port 49B discharges the processing liquid in the second discharge direction D2 toward the second liquid deposition position P2 in the lower surface of the substrate W. The second liquid landing position P2 is a position radially outward from the second discharge port 49B. The second liquid landing position P2 is a position away from the center of the lower surface of the substrate W. The second discharge direction D2 is an obliquely upward direction from the second discharge port 49B toward the second liquid landing position P2. The second discharge direction D2 is inclined radially outward with respect to the lower surface of the substrate W. As shown in FIG. 10, the second discharge ports 49B and the second liquid landing position P2 are aligned in the longitudinal direction DL in plan view. The second ejection direction D2 is a direction parallel to the first virtual line V1 in plan view. As can be seen by comparing FIG. 8 and FIG. 9, the inclination angle θa of the first discharge direction D1 with respect to the vertical direction is larger than the inclination angle θb of the second discharge direction D2 with respect to the vertical direction.

  The control device 3 supplies the processing liquid to the shared portion 27 of the two processing liquid supply paths 25 by selectively opening one of the chemical liquid valve 16 and the rinse liquid valve 18 (see FIG. 1). The processing liquid supplied to the shared section 27 is supplied to each of the plurality of branch flow paths 32 through the individual section 28 and the main flow path 31 of the processing liquid supply path 25 in this order. The processing liquid supplied to the plurality of branch channels 32 is supplied to the plurality of discharge ports 49, respectively. Accordingly, when the control device 3 opens the chemical liquid valve 16 or the rinse liquid valve 18, the processing liquid is discharged from all the discharge ports 49.

  As shown in FIG. 10 and FIG. 11, the processing liquid discharged from the plurality of discharge ports 49 respectively has a plurality of liquid landing positions (first liquid landing position P1 and second liquid landing positions having different horizontal distances from the rotation axis A1. The liquid arrives at the liquid position P2). The processing liquid that has landed on the lower surface of the rotating substrate W receives a centrifugal force due to the rotation of the substrate W. Therefore, the processing liquid spreads radially outward along the lower surface of the substrate W while moving in the rotation direction Dr together with the lower surface of the substrate W.

  The first discharge port 49A discharges the processing liquid obliquely upward toward the downstream in the rotation direction Dr. Therefore, the flow of the processing liquid that moves in the rotation direction Dr together with the lower surface of the substrate W is hardly disturbed by the processing liquid discharged from the first discharge port 49A. Furthermore, compared with the case where the first ejection direction D1 is a direction perpendicular to the lower surface of the substrate W, the impact when the processing liquid ejected from the first ejection port 49A reaches the lower surface of the substrate W can be reduced.

  The second discharge port 49B discharges the processing liquid obliquely upward in a direction away from the rotation axis A1. The processing liquid discharged from the second discharge port 49B flows radially outward along the lower surface of the substrate W by kinetic energy. The processing liquid that moves in the rotation direction Dr together with the lower surface of the substrate W is guided radially outward by this flow in addition to the centrifugal force. Therefore, even when the rotation speed of the substrate W is low, the processing liquid discharged from the first discharge ports 49A easily reaches the peripheral edge of the lower surface of the substrate W.

  Further, since the second discharge port 49B discharges the processing liquid radially outward, even when the rotation speed of the substrate W is low, the processing liquid discharged from the second discharge port 49B remains on the lower surface of the substrate W. Reach the periphery. The processing liquid that has reached the lower peripheral edge of the substrate W tends to stay on the lower peripheral edge of the substrate W due to surface tension. Therefore, as shown in FIG. 11, the thickness of the liquid film partially increases at the peripheral edge of the lower surface of the substrate W. When the processing liquid is present at the lower peripheral edge of the substrate W, the processing liquid inside the substrate W is attracted to the processing liquid present at the lower peripheral edge. Therefore, the processing liquid supplied from the first discharge port 49A to the lower surface of the substrate W can be more reliably spread to the lower surface peripheral edge.

  After stopping the supply of the processing liquid to the lower nozzle 14, the control device 3 removes the processing liquid remaining in the lower nozzle 14 by causing the suction device 22 (see FIG. 1) to suck the processing liquid. A suck back process is performed. Since the branch flow path 32 (the first branch flow path 32a and the second branch flow path 32b) is short, the treatment liquid hardly remains in the branch flow path 32 after the suck back process is performed. Therefore, particles caused by the processing liquid remaining in the branch flow path 32 are hardly generated. Therefore, it is possible to suppress or prevent the particles generated in the nozzle portion 23 from being supplied to the substrate W.

FIG. 12 is a process diagram for explaining a processing example of the substrate W executed by the substrate processing apparatus 1. The following steps are executed by the control device 3 controlling the substrate processing apparatus 1.
When the substrate W is processed, a loading process for loading the substrate W into the chamber 4 is performed (step S1 in FIG. 12).

  Specifically, in the state where the spin motor 13 is stopped at a rotation angle at which the hand H1 of the transfer robot (see FIG. 1) does not contact the lower nozzle 14, the transfer robot moves the hand H1 supporting the substrate W into the chamber 4. Enter inside. Thereafter, the transfer robot places the substrate W on the hand H <b> 1 on the plurality of chuck pins 9. Thereafter, the plurality of chuck pins 9 are pressed against the peripheral edge of the substrate W, and the substrate W is held by the plurality of chuck pins 9. The spin motor 13 starts to rotate after the substrate W is gripped, and rotates the substrate W. The transfer robot retracts the hand H <b> 1 from the inside of the chamber 4 after the substrate W is placed on the plurality of chuck pins 9.

Next, a chemical solution supply step of supplying hydrofluoric acid, which is an example of a chemical solution, to the lower surface of the substrate W is performed (step S2 in FIG. 12).
Specifically, the chemical liquid valve 16 is opened. Thus, hydrofluoric acid is discharged from the plurality of discharge ports 49 of the lower nozzle 14 toward the lower surface of the rotating substrate W. The rotation speed of the substrate W in the chemical solution supply step is, for example, 100 rpm to 1000 rpm, preferably 500 rpm. Moreover, the supply flow rate of hydrofluoric acid in the chemical solution supply step is, for example, 500 ml L / min to 3.0 L / min, preferably 2.0 L / min.

  The hydrofluoric acid discharged from the lower nozzle 14 flows outward along the lower surface of the substrate W. As a result, a hydrofluoric acid liquid film covering the entire lower surface of the substrate W is formed. The hydrofluoric acid that has reached the peripheral edge of the lower surface of the substrate W is discharged around the substrate W. In this way, hydrofluoric acid is supplied to the entire lower surface of the substrate W, and the lower surface of the substrate W is processed uniformly. When a predetermined time elapses after the chemical liquid valve 16 is opened, the chemical liquid valve 16 is closed and the discharge of hydrofluoric acid from the lower nozzle 14 is stopped. Thereafter, the suction valve 21 is opened, and the hydrofluoric acid remaining in the lower nozzle 14 is sucked into the suction device 22 through the suction pipe 19.

After the chemical liquid supply process is performed, a rinse liquid supply process for supplying pure water, which is an example of a rinse liquid, to the lower surface of the substrate W is performed (step S3 in FIG. 12).
Specifically, the rinse liquid valve 18 is opened. Thereby, pure water is discharged from the plurality of discharge ports 49 of the lower nozzle 14 toward the lower surface of the rotating substrate W. The rotation speed of the substrate W and the supply flow rate of pure water in the rinse liquid supply process may be values within the range described in the chemical liquid supply process, or may be different from the values within this range. The pure water discharged from the lower nozzle 14 flows outward along the lower surface of the substrate W. The pure water that has reached the peripheral edge of the lower surface of the substrate W is discharged around the substrate W. In this way, hydrofluoric acid on the lower surface of the substrate W is washed away with pure water, and the entire lower surface of the substrate W is covered with a liquid film of pure water. When a predetermined time elapses after the rinsing liquid valve 18 is opened, the rinsing liquid valve 18 is closed and the discharge of pure water from the lower nozzle 14 is stopped. Thereafter, the suction valve 21 is opened, and the pure water remaining in the lower nozzle 14 is sucked into the suction device 22 through the suction pipe 19.

Next, a drying process for drying the substrate W is performed by rotating the substrate W at a high speed (step S4 in FIG. 12).
Specifically, the spin motor 13 increases the rotation speed of the substrate W to a high rotation speed (for example, several thousand rpm). Thereby, a large centrifugal force is applied to the pure water adhering to the substrate W, and the pure water is shaken off from the substrate W to the periphery thereof. Therefore, pure water is removed from the substrate W, and the substrate W is dried. When a predetermined time elapses after high-speed rotation of the substrate W is started, the spin motor 13 stops rotating.

Next, an unloading process for unloading the substrate W from the chamber 4 is performed (step S5 in FIG. 12).
Specifically, the plurality of chuck pins 9 are separated from the peripheral end surface of the substrate W, and the gripping of the substrate W is released. Thereafter, the transport robot enters the inside of the chamber 4 with the spin motor 13 stopped at a rotation angle at which the hand H1 of the transport robot does not contact the lower nozzle 14. Thereafter, the transfer robot takes the substrate W on the spin chuck 7 with the hand H 1, and retracts the hand H 1 from the inside of the chamber 4.

  As described above, in the present embodiment, the nozzle portion 23 of the lower nozzle 14 discharges the processing liquid from the first discharge port 49A in the first discharge direction D1 toward the first liquid deposition position P1 in the lower surface of the substrate W. . The first liquid landing position P1 is a position downstream of the first discharge port 49A in the rotation direction Dr. The first discharge direction D1 is a direction from the first discharge port 49A toward the first liquid deposition position P1, and is inclined downstream in the rotation direction Dr with respect to the lower surface of the substrate W. Therefore, compared with the case where the first discharge direction D1 is a direction perpendicular to the lower surface of the substrate W, the impact when the processing liquid discharged from the first discharge port 49A is deposited on the lower surface of the substrate W can be reduced.

  Further, the nozzle unit 23 discharges the processing liquid from the second discharge port 49B in the second discharge direction D2 toward the second liquid landing position P2 in the lower surface of the substrate W. The second liquid landing position P2 is a position radially outward from the second discharge port 49B. The second discharge direction D2 is a direction from the second discharge port 49B toward the second liquid deposition position P2, and is inclined radially outward with respect to the lower surface of the substrate W. Since the processing liquid discharged from the second discharge port 49B has kinetic energy including a radial component, it flows radially outward along the lower surface of the substrate W.

  The processing liquid on the lower surface of the rotating substrate W receives a centrifugal force. Therefore, the processing liquid spreads radially outward along the lower surface of the substrate W while moving in the rotation direction Dr together with the lower surface of the substrate W. The processing liquid discharged from the second discharge port 49B flows radially outward along the lower surface of the substrate W by kinetic energy. The processing liquid that moves in the rotation direction Dr together with the lower surface of the substrate W is guided radially outward by this flow in addition to the centrifugal force. Therefore, even when the rotation speed of the substrate W is low, the processing liquid discharged from the first discharge ports 49A easily reaches the peripheral edge of the lower surface of the substrate W. Therefore, it can suppress or prevent that the lower surface peripheral part of the board | substrate W exposes from the liquid film of a process liquid. Thereby, an increase in particles and a decrease in processing uniformity can be suppressed or prevented.

  Further, since the upstream end 41a provided in the vertical section 40 of the nozzle portion 23 is disposed above the intermediate height Hm between the lower surface of the substrate W and the upper surface 8a of the spin base 8, the lower surface of the substrate W It is difficult for the processing liquid dropped from the substrate and the processing liquid on the spin base 8 to pass between the lower surface of the substrate W and the nozzle portion 23 (see FIG. 9). Therefore, the processing liquid whose activity or temperature has changed is difficult to adhere to the lower surface of the substrate W. Therefore, the lower surface of the substrate W can be processed efficiently. Specifically, when the lower surface of the substrate W is etched with an etching solution, the etching rate (etching amount per unit time) can be increased, and when the lower surface of the substrate W is washed with a cleaning solution, The removal rate can be increased.

  In the present embodiment, the processing liquid in the main channel 31 is supplied to each of the plurality of branch channels 32. Then, the processing liquid in the plurality of branch channels 32 is supplied to the plurality of discharge ports 49, respectively. Therefore, the processing liquid can be discharged from all the discharge ports 49 simply by supplying the processing liquid to the main channel 31. As described above, since a part of the flow path (main flow path 31) for supplying the processing liquid to the plurality of discharge ports 49 is shared, the structure for supplying the processing liquid to the plurality of discharge ports 49 can be simplified.

  In the present embodiment, the processing liquid in the same flow path (main flow path 31) is supplied to the first discharge port 49A and the second discharge port 49B. The opening area of the second discharge port 49B that discharges the processing liquid radially outward is larger than the opening area of the intermediate discharge ports 49b included in the plurality of first discharge ports 49A. Accordingly, the second discharge port 49B discharges the processing liquid at a larger flow rate than the intermediate discharge port 49b. Therefore, even when the rotation speed of the substrate W is low, the processing liquid discharged from the intermediate discharge port 49b easily reaches the peripheral edge of the lower surface of the substrate W. Furthermore, the processing liquid on the lower surface of the substrate W can be more reliably guided radially outward.

  In the present embodiment, the processing liquid in the same flow path (main flow path 31) is supplied to the intermediate discharge port 49b and the outer discharge port 49c. The outer discharge port 49c is disposed radially outward from the intermediate discharge port 49b, and the opening area of the outer discharge port 49c is larger than the opening area of the intermediate discharge port 49b. Therefore, a larger amount of processing liquid is supplied to the lower surface peripheral edge side of the substrate W. Therefore, it is possible to increase the amount of the processing liquid that is guided outward in the radial direction. Thereby, it can suppress or prevent that the lower surface peripheral part of the board | substrate W exposes from the liquid film of a process liquid.

  In the present embodiment, the first branch channel 32a is orthogonal to the longitudinal direction of the main channel 31 in plan view. The second branch flow path 32b extends in the longitudinal direction of the main flow path 31 in plan view. The processing liquid in the main channel 31 flows in the longitudinal direction of the main channel 31 toward the second branch channel 32b. Therefore, the processing liquid in the main channel 31 is smoothly supplied to the second branch channel 32b. Furthermore, since the second branch flow path 32b is shorter than the first branch flow path 32a, the pressure loss in the second branch flow path 32b is small. Thereby, the processing liquid can be efficiently supplied from the main flow path 31 to the second discharge port 49B via the second branch flow path 32b.

  In the present embodiment, the nozzle portion 23 discharges the processing liquid from the first discharge port 49A toward the first liquid landing position P1 in the lower surface of the substrate W. The first liquid deposition position P1 is a position radially outward of the rotation axis A1, and is away from the rotation axis A1. The processing liquid discharged from the first discharge port 49A spreads along the lower surface of the substrate W with the momentum applied to the first liquid application position P1, and forms a liquid film that covers the first liquid application position P1. The center of the lower surface of the substrate W is covered with a liquid film F1 (see FIG. 10) when the processing liquid discharged from the first discharge port 49A is deposited on the lower surface of the substrate W. As a result, the processing liquid is also supplied to the center of the lower surface of the substrate W.

  Since the substrate W rotates about the vertical rotation axis A1 passing through the central portion of the substrate W, a large centrifugal force is not applied to the liquid at the center of the lower surface of the substrate W. Therefore, liquid may remain at the center of the lower surface of the substrate W, and particles may be generated at the center of the lower surface of the substrate W. In the present embodiment, the amount of the processing liquid supplied to the center of the lower surface of the substrate W can be reduced as compared with the case where the processing liquid is discharged toward the center of the lower surface of the substrate W. Thereby, the center of the lower surface of the substrate W can be processed while suppressing or preventing the processing liquid from remaining at the center of the lower surface of the substrate W.

  In the present embodiment, the processing liquid in the same flow path (main flow path 31) is supplied to the inner discharge port 49a and the intermediate discharge port 49b. The opening area of the inner discharge port 49a is larger than the opening area of the intermediate discharge port 49b. Therefore, the inner discharge port 49a discharges the processing liquid at a larger flow rate than the intermediate discharge port 49b. When the processing liquid discharged from the inner discharge port 49a is deposited on the lower surface of the substrate W, a larger liquid film F1 (see FIG. 10) is formed on the lower surface of the substrate W. Therefore, the processing liquid can be reliably supplied to the center of the lower surface of the substrate W.

  In the present embodiment, the upstream end of each branch flow path 32 is connected to the main flow path 31, and the downstream end of each branch flow path 32 is connected to the corresponding discharge port 49. The length from the upstream end of the branch channel 32 to the downstream end of the branch channel 32 is shorter than the radius R1 of the cylindrical main channel 31. If the branch flow path 32 is long, the treatment liquid may remain in the branch flow path 32 after the discharge of the treatment liquid is stopped, and particles may be generated in the branch flow path 32. Therefore, the generation of particles can be suppressed or prevented by shortening the branch flow path 32.

  In the present embodiment, inclined surfaces (upper downstream inclined surface 36 and upper inclined surface 44) inclined with respect to the horizontal plane are provided in the nozzle portion 23. The plurality of discharge ports 49 are open at the inclined surface. Therefore, the inclination angle θa (see FIG. 9) of the first discharge direction D1 with respect to the vertical direction can be increased as compared with the case where the discharge surface where the plurality of discharge ports 49 are open is a horizontal plane. Thereby, it is possible to further reduce the impact when the processing liquid discharged from the first discharge port 49A is deposited on the lower surface of the substrate W. Furthermore, the liquid on the inclined surface flows down along the inclined surface by gravity. Therefore, the processing liquid discharged from the plurality of discharge ports 49 and the processing liquid adhering to the inclined surface of the nozzle portion 23 are unlikely to remain on the inclined surface of the nozzle portion 23. Therefore, generation of particles on the inclined surface of the nozzle portion 23 can be suppressed or prevented.

  Further, in this embodiment, the upstream end 41 provided in the vertical section 40 of the nozzle portion 23 has a triangular shape protruding upstream, so that the fluid resistance applied to the nozzle portion 23 during rotation of the substrate W (from gas or liquid) Resistance) can be reduced. Furthermore, since the upper edge and the lower edge of the upstream end portion 41 are inclined with respect to the horizontal plane, the processing liquid hardly remains in the upstream end portion 41. Similarly, since the upper edge and the lower edge of the downstream end portion 42 are inclined with respect to the horizontal plane, the processing liquid hardly remains in the downstream end portion 42. Therefore, the generation of particles due to the liquid residue can be suppressed or prevented.

Although the description of the embodiment of the present invention has been described above, the present invention is not limited to the contents of the above-described embodiment, and various modifications can be made within the scope of the present invention.
For example, although the case where the lower nozzle 14 includes the two nozzle portions 23 has been described in the above embodiment, one nozzle portion 23 may be omitted.
In the above-described embodiment, the case where the shape of the vertical cross section 40 of the nozzle portion 23 is uniform except for the tip portion of the nozzle portion 23 is uniform, but the shape from the root of the nozzle portion 23 to the tip of the nozzle portion 23 is uniform. May be.

  Although the said embodiment demonstrated the case where the vertical cross section 40 of the nozzle part 23 was a polygon, the vertical cross section 40 of the nozzle part 23 may be a streamline as shown in FIG. In this case, the fluid resistance applied to the nozzle portion 23 during the rotation of the substrate W can be reduced. Furthermore, since a smooth fluid flow is formed around the nozzle portion 23 and the generation of vortex is suppressed, the processing liquid hardly remains on the outer surface of the nozzle portion 23. Therefore, the generation of particles due to the liquid residue can be suppressed or prevented.

  In the embodiment, the case where the first discharge direction D1 is a direction parallel to the second virtual line V2 in plan view has been described. However, the first discharge direction D1 is relative to the second virtual line V2 in plan view. It may be tilted inward or outward. Even if the first discharge direction D1 is inclined outward with respect to the second virtual line V2 in plan view, the inclination angle of the first discharge direction D1 with respect to the second virtual line V2 is the second discharge with respect to the second virtual line V2. It is smaller than the inclination angle in the direction D2.

  In the embodiment, the case where the second discharge direction D2 is a direction parallel to the first virtual line V1 has been described. However, the second discharge direction D2 is a rotation direction Dr with respect to the first virtual line V1 in plan view. It may be inclined upstream or downstream. Even if the second discharge direction D2 is inclined downstream in the rotation direction Dr with respect to the first virtual line V1 in plan view, the inclination angle of the second discharge direction D2 with respect to the first virtual line V1 is the first virtual line V1. Is smaller than the inclination angle of the first discharge direction D1.

  In the embodiment, the case where the plurality of first discharge ports 49A includes the inner discharge port 49a and the outer discharge port 49c having an opening area larger than that of the intermediate discharge port 49b has been described. However, the openings of the plurality of first discharge ports 49A are described. The area may be uniform. Further, the opening areas of the inner discharge port 49a and the outer discharge port 49c may be different from each other. The opening area of the second outlet 49B may be different from the opening area of at least one of the inner outlet 49a and the outer outlet 49c. Further, the number of the outer discharge ports 49c may be one. The number of the inner discharge ports 49a may be two or more. Similarly, the number of the second discharge ports 49B may be two or more.

  In the above embodiment, the case where the upstream end 41a and the downstream end 42a are arranged at the same height has been described. However, the upstream end 41a may be arranged at a height higher or lower than the downstream end 42a. Good. The downstream end 42a may be disposed at a height equal to the intermediate height Hm between the lower surface of the substrate W and the upper surface 8a of the spin base 8, or may be disposed below the intermediate height Hm. Good.

In the above embodiment, the case where the upstream end 41a and the downstream end 42a are disposed at the same height as the horizontal central plane C1 passing through the center of the vertical section 40 in the vertical direction has been described. At least one of the 42a may be disposed at a height above or below the center plane C1.
In the embodiment, the straight upper edge of the upstream end portion 41 and the straight lower edge of the upstream end portion 41 intersect, and the straight upper edge of the downstream end portion 42 and the straight line of the downstream end portion 42. The case where the lower edge of the shape intersects has been described. However, the upper edge and the lower edge of the upstream end portion 41 may be connected via an arc that is convex on the upstream side in the rotational direction Dr. Similarly, the upper edge and the lower edge of the downstream end portion 42 may be connected via a convex arc on the downstream side in the rotation direction Dr.

In the embodiment, the angle (first angle θ1) formed by the upper edge of the upstream end 41 and the lower edge of the upstream end 41 is the upper edge of the downstream end 42 and the lower edge of the downstream end 42. Although the case where the angle is smaller than the second angle θ2 has been described, the first angle θ1 may be equal to the second angle θ2 or may be larger than the second angle θ2.
In the embodiment described above, the case where the two processing liquid supply paths 25 are combined in the base portion 24 of the lower nozzle 14 and share a part of each other has been described. May be channels independent of each other.

In the embodiment, the case where the processing liquid in the main channel 31 is supplied to all the discharge ports 49 via the plurality of branch channels 32 has been described. A plurality of individual flow paths may be provided inside the nozzle portion 23.
Although the case where the chemical liquid is hydrofluoric acid and the rinse liquid is pure water has been described in the embodiment, the chemical liquid may be a liquid other than hydrofluoric acid. Similarly, the rinse liquid may be a liquid other than pure water.

In the embodiment, the case where the processing liquid is supplied only to the lower surface of the substrate W has been described, but the processing liquid may also be supplied to the upper surface of the substrate W. That is, the substrate processing apparatus 1 may further include an upper nozzle that discharges the processing liquid downward toward the upper surface of the substrate W.
When supplying the processing liquid to both the upper surface and the lower surface of the substrate W, the upper surface processing step of supplying the processing liquid to the upper surface of the substrate W is a lower surface processing step of supplying the processing liquid to the lower surface of the substrate W (the aforementioned chemical solution supplying step) Or the rinsing liquid supply step) may be executed at the same time as the at least part of the rinsing liquid supply step, or may be executed during a period when the lower surface treatment step is not executed.

  Two or more of all the structures and processes described above may be combined.

1: substrate processing apparatus 3: control apparatus 7: spin chuck 8: spin base 8a: upper surface 9: chuck pin 13: spin motor 14: lower nozzle 23: nozzle section 24: base section 25: treatment liquid supply path 26: upstream section 29: Downstream part 31: Main channel 32: Branch channel 32a: First branch channel 32b: Second branch channel 36: Upper downstream inclined surface 44: Upper inclined surface 40: Vertical section 41: Upstream end 41a: Upstream End 42: Downstream end portion 42a: Downstream end 49: Discharge port 49A: First discharge port 49B: Second discharge port 49a: Inner discharge port 49b: Intermediate discharge port 49c: Outer discharge port A1: Rotating axis D1: First discharge Direction D2: Second discharge direction DL: Longitudinal direction Dr: Rotational direction Ds: Short direction F1: Liquid film Hm: Intermediate height P1: First liquid landing position P2: Second liquid landing position R1: Radius W: Substrate

Claims (10)

Substrate holding means for rotating the substrate in a rotation direction that is a constant direction around a vertical rotation axis passing through the central portion of the substrate while holding the substrate horizontally;
It includes a plurality of discharge ports arranged at a plurality of positions at different horizontal distances from the rotation axis, is arranged between the lower surface of the substrate and the substrate holding means, and extends in the horizontal longitudinal direction. A nozzle portion for discharging a processing liquid from the plurality of discharge ports toward the lower surface of the substrate,
The plurality of discharge ports are a plurality of first discharge ports that discharge a processing liquid in a first discharge direction inclined to the downstream side in the rotation direction with respect to the lower surface of the substrate, and outward from the lower surface of the substrate A second discharge port for discharging the processing liquid in a second discharge direction inclined to
The vertical cross section of the nozzle portion orthogonal to the longitudinal direction includes an upstream end disposed on the most upstream side in the rotation direction in the vertical cross section,
The substrate processing apparatus, wherein the upstream end is disposed above an intermediate height between the lower surface of the substrate and the substrate holding means.   The nozzle section extends from the main channel to the plurality of discharge ports, and the processing solution in the main channel is supplied to the plurality of discharge ports. The main channel guides the processing solution supplied to each of the plurality of discharge ports. The substrate processing apparatus according to claim 1, further comprising a plurality of branch channels that are respectively supplied to the discharge ports.   The substrate processing apparatus according to claim 2, wherein an opening area of the second discharge port is larger than at least one opening area of the plurality of first discharge ports.   The plurality of first discharge ports are arranged on the outer side of the rotation axis and on the outer side of the intermediate discharge port, and the opening area is larger than the opening area of the intermediate discharge port. 4. The substrate processing apparatus according to claim 2, further comprising an outer discharge port having a surface.   The plurality of first discharge ports are formed so as to discharge a processing liquid toward a first liquid deposition position in the lower surface of the substrate that is separated from the rotation axis, and the processing liquid is applied to the lower surface of the substrate. 5. The substrate processing apparatus according to claim 2, further comprising an inner discharge port that discharges the processing liquid so that the center of the lower surface of the substrate is included in a range that spreads when the liquid is deposited.   The plurality of first discharge ports are disposed outside the inner discharge port and the inner discharge port disposed outside the rotation axis, and are smaller than the opening area of the inner discharge port. The substrate processing apparatus according to claim 5, comprising an intermediate discharge port having an area.   The substrate processing apparatus according to claim 2, wherein at least one of the plurality of branch channels is shorter than a radius of the cylindrical main channel.   The substrate processing apparatus according to claim 1, wherein the nozzle portion further includes an inclined surface in which at least one of the plurality of discharge ports is opened.   The vertical section of the nozzle portion further includes a triangular upstream end portion in which a length in the vertical direction decreases toward the upstream in the rotation direction and the upstream end is provided. The substrate processing apparatus as described in any one of these.   The substrate processing apparatus according to claim 1, wherein the vertical cross section of the nozzle portion is streamlined.

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