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JP2016178571A - Waveguide/transmission line converter - Google Patents

Waveguide/transmission line converter Download PDF

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JP2016178571A
JP2016178571A JP2015058861A JP2015058861A JP2016178571A JP 2016178571 A JP2016178571 A JP 2016178571A JP 2015058861 A JP2015058861 A JP 2015058861A JP 2015058861 A JP2015058861 A JP 2015058861A JP 2016178571 A JP2016178571 A JP 2016178571A
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waveguide
transmission line
dielectric substrate
line converter
pattern
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真行 菅野
Masayuki Sugano
真行 菅野
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Japan Radio Co Ltd
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Japan Radio Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To satisfy low reflection characteristics and high permeation characteristics with good reproducibility, even in an actual case where the arrangement accuracy of the pattern of a dielectric substrate and the location accuracy between the pattern of a dielectric substrate and a waveguide are assumed low, in a waveguide/transmission line converter using a high frequency band of milli-wave zone, or the like.SOLUTION: In a patch antenna, broadband is applied by disposing a parasitic element in the vicinity of a patch element. More specifically, in a waveguide/transmission line converter 2, broadband is attained by disposing a passive element 29 on a layer in the vicinity of a matching element 28 and different therefrom in the waveguide direction, and low reflection characteristics and high permeation characteristics can be satisfied with good reproducibility, even in an actual case where the arrangement accuracy of the pattern of first and second dielectric substrates 23, 24 and the location accuracy between the pattern of the first and second dielectric substrates 23, 24 and a waveguide 21 are assumed low.SELECTED DRAWING: Figure 3

Description

本発明は、導波管により伝送される電力と、伝送線路により伝送される電力と、を相互に変換する導波管/伝送線路変換器に関する。   The present invention relates to a waveguide / transmission line converter that mutually converts power transmitted by a waveguide and power transmitted by a transmission line.

導波管/伝送線路変換器は、アンテナ装置への給電等に適用されており、特許文献1、2等に開示されている。まず、特許文献1では、導波管内の電界強度の高い位置において、伝送線路を挿入している。しかし、特許文献1では、導波管内の電磁波が有する波長のほぼ1/4に等しい距離分だけ、導波管に沿って伝送線路から離れた位置において、導波管短絡面を必要とする。よって、特許文献1では、導波管/伝送線路変換器を小型化することができず、短絡面を形成する構造体が、アンテナ装置を形成する面より前面に存在するため、アンテナ装置の指向性の劣化原因となる。   The waveguide / transmission line converter is applied to power supply to an antenna device and is disclosed in Patent Documents 1 and 2 and the like. First, in Patent Document 1, a transmission line is inserted at a position where the electric field strength is high in the waveguide. However, in Patent Document 1, a waveguide short-circuit surface is required at a position that is separated from the transmission line along the waveguide by a distance equal to approximately ¼ of the wavelength of the electromagnetic wave in the waveguide. Therefore, in Patent Document 1, the waveguide / transmission line converter cannot be reduced in size, and the structure that forms the short-circuited surface exists in front of the surface that forms the antenna device. Cause deterioration of sex.

特開2004−320460号公報JP 2004-320460 A 特開2000−244212号公報JP 2000-244212 A

次に、特許文献2では、整合素子に伝送線路を結合し、伝送線路から導波管へ電波を伝搬する技術を利用している。以下の説明から明らかなように、特許文献2では、特許文献1と比べて、導波管/伝送線路変換器を小型化することができ、アンテナ装置の指向性を劣化させる原因となる短絡面を形成する構造体を無くすことができる。   Next, in Patent Document 2, a technique of coupling a transmission line to a matching element and propagating radio waves from the transmission line to a waveguide is used. As will be apparent from the following description, in Patent Document 2, the waveguide / transmission line converter can be reduced in size compared to Patent Document 1, and the short-circuit surface that causes the directivity of the antenna device to deteriorate. The structure which forms can be eliminated.

従来技術の導波管/伝送線路変換器の構成を図1に示す。最上段は、導波管/伝送線路変換器1の側面断面図を示す。第2段は、導波管/伝送線路変換器1の矢視A−A平面断面図を示す。第3段は、導波管/伝送線路変換器1の矢視B−B平面断面図を示す。最下段は、後述する整合素子17の共振長の方向の電界分布を示す。   The configuration of a prior art waveguide / transmission line converter is shown in FIG. The uppermost stage shows a side sectional view of the waveguide / transmission line converter 1. The second stage shows an AA plane cross-sectional view of the waveguide / transmission line converter 1. The third stage shows a cross-sectional view taken along the line B-B of the waveguide / transmission line converter 1. The bottom row shows the electric field distribution in the direction of the resonance length of the matching element 17 described later.

導波管/伝送線路変換器1は、誘電体基板13、短絡金属層14、金属部材15、接地金属層16及び整合素子17を備える。   The waveguide / transmission line converter 1 includes a dielectric substrate 13, a short-circuit metal layer 14, a metal member 15, a ground metal layer 16, and a matching element 17.

誘電体基板13は、導波管11の開口部を塞ぐように配置される。誘電体基板13の面は、導波管11の導波方向に垂直な面である。図1の第2、3段において、誘電体基板13のうちパターンが配置される部分は、白地で示され、誘電体基板13のうちパターンが配置されない部分は、斜線で示される。   The dielectric substrate 13 is disposed so as to close the opening of the waveguide 11. The surface of the dielectric substrate 13 is a surface perpendicular to the waveguide direction of the waveguide 11. In the second and third stages of FIG. 1, the portion of the dielectric substrate 13 where the pattern is arranged is shown in white, and the portion of the dielectric substrate 13 where the pattern is not arranged is shown in diagonal lines.

短絡金属層14は、誘電体基板13の表面かつ導波管11の外部に配置され、誘電体基板13を貫通する金属部材15及び誘電体基板13の表面かつ導波管11の外枠に配置される接地金属層16により、導波管11と同電位に保持される。   The short-circuit metal layer 14 is disposed on the surface of the dielectric substrate 13 and outside the waveguide 11, and is disposed on the surface of the metal member 15 penetrating the dielectric substrate 13 and the surface of the dielectric substrate 13 and on the outer frame of the waveguide 11. The ground metal layer 16 is held at the same potential as the waveguide 11.

整合素子17は、誘電体基板13の表面かつ導波管11の内部に配置され、誘電体基板13を介して伝送線路12と電磁的に結合され、誘電体基板13の周囲の環境における実効波長λの電磁波を定在波として立てるための共振長(ほぼλ/2)を、導波管11内の電界方向及び伝送線路12の給電方向に有する。 The matching element 17 is disposed on the surface of the dielectric substrate 13 and inside the waveguide 11, is electromagnetically coupled to the transmission line 12 via the dielectric substrate 13, and has an effective wavelength in the environment around the dielectric substrate 13. A resonance length (approximately λ g / 2) for raising an electromagnetic wave of λ g as a standing wave is provided in the electric field direction in the waveguide 11 and the feeding direction of the transmission line 12.

従来技術の導波管/伝送線路変換器の特性を図2に示す。このように、図2に示した反射特性は、導波管/伝送線路変換器1の中心周波数のまわりの狭帯域において低くなり、図2に示した透過特性は、導波管/伝送線路変換器1の中心周波数のまわりの狭帯域において高くなる。ここで、図2に示した低い反射特性及び高い透過特性は、誘電体基板13のパターンの配置精度及び誘電体基板13のパターンと導波管11の間の位置精度が高いと想定される理想の場合における、シミュレーション結果である。   The characteristics of a prior art waveguide / transmission line converter are shown in FIG. As described above, the reflection characteristic shown in FIG. 2 becomes low in a narrow band around the center frequency of the waveguide / transmission line converter 1, and the transmission characteristic shown in FIG. High in a narrow band around the center frequency of the device 1. Here, the low reflection characteristic and the high transmission characteristic shown in FIG. 2 are ideal for assuming that the arrangement accuracy of the pattern of the dielectric substrate 13 and the positional accuracy between the pattern of the dielectric substrate 13 and the waveguide 11 are high. It is a simulation result in the case of.

よって、誘電体基板13のパターンの配置精度及び誘電体基板13のパターンと導波管11の間の位置精度が低いと想定される実際の場合において、図2に示した低い反射特性及び高い透過特性は、再現性よく満足されない可能性が高い。このことは、ミリ波帯等の高い周波数帯を用いる導波管/伝送線路変換器1において、特に顕著となる。   Therefore, in the actual case where the arrangement accuracy of the pattern of the dielectric substrate 13 and the positional accuracy between the pattern of the dielectric substrate 13 and the waveguide 11 are assumed to be low, the low reflection characteristics and the high transmission shown in FIG. The characteristics are likely not to be satisfied with good reproducibility. This is particularly noticeable in the waveguide / transmission line converter 1 using a high frequency band such as the millimeter wave band.

そこで、前記課題を解決するために、本発明は、ミリ波帯等の高い周波数帯を用いる導波管/伝送線路変換器において、誘電体基板のパターンの配置精度及び誘電体基板のパターンと導波管の間の位置精度が低いと想定される実際の場合においても、低い反射特性及び高い透過特性を再現性よく満足することを目的とする。   Therefore, in order to solve the above-described problems, the present invention provides a waveguide / transmission line converter that uses a high frequency band such as a millimeter wave band. The object is to satisfy the low reflection characteristic and the high transmission characteristic with good reproducibility even in the actual case where the position accuracy between the wave tubes is assumed to be low.

上記目的を達成する第1の手段として、パッチアンテナにおいて、パッチ素子の近傍に、寄生素子を配置することにより、広帯域化を図ることを応用した。すなわち、導波管/伝送線路変換器において、整合素子の近傍かつ整合素子と導波方向に異なる層に、無給電素子を配置することにより、広帯域化を図ることができ、誘電体基板のパターンの配置精度及び誘電体基板のパターンと導波管の間の位置精度が低いと想定される実際の場合においても、低い反射特性及び高い透過特性を再現性よく満足することができる。   As a first means for achieving the above object, in the patch antenna, it is applied to increase the bandwidth by arranging a parasitic element in the vicinity of the patch element. In other words, in the waveguide / transmission line converter, by providing parasitic elements in different layers in the vicinity of the matching element and in the waveguide direction, the bandwidth can be increased. Even in an actual case where it is assumed that the positioning accuracy between the dielectric substrate pattern and the position accuracy between the pattern of the dielectric substrate and the waveguide is low, low reflection characteristics and high transmission characteristics can be satisfied with good reproducibility.

具体的には、本発明は、導波管により伝送される電力と、伝送線路により伝送される電力と、を相互に変換する導波管/伝送線路変換器であって、前記導波管の開口部を塞ぐように配置される第1の誘電体基板と、前記第1の誘電体基板の表面かつ前記導波管の外部に配置される第2の誘電体基板と、前記第1及び第2の誘電体基板の間に配置され、前記伝送線路と結合され、前記第1及び第2の誘電体基板の周囲の環境における実効波長の電磁波を定在波として立てるための共振長を前記導波管内の電界方向及び前記伝送線路の給電方向に有する整合素子と、前記第1の誘電体基板の表面かつ前記導波管の内部に配置され、前記整合素子と電磁的に結合され、前記整合素子が有する共振長と異なる共振長を有する無給電素子と、を備えることを特徴とする導波管/伝送線路変換器である。   Specifically, the present invention is a waveguide / transmission line converter that mutually converts power transmitted by a waveguide and power transmitted by a transmission line, A first dielectric substrate disposed so as to close the opening; a second dielectric substrate disposed on the surface of the first dielectric substrate and outside the waveguide; and the first and first dielectric substrates Between the two dielectric substrates, coupled to the transmission line, and having a resonance length for raising an electromagnetic wave having an effective wavelength as a standing wave in an environment around the first and second dielectric substrates. A matching element having an electric field direction in the wave tube and a feeding direction of the transmission line; a surface of the first dielectric substrate and inside the waveguide; and electromagnetically coupled to the matching element; A parasitic element having a resonance length different from the resonance length of the element. A waveguide / transmission line converter according to claim.

この構成によれば、上述の効果に加え、(1)2枚の誘電体基板を使用するため、厚みを増して誘電体基板の強度を向上させたことにより、パターンと導波管の間の位置精度を高くすることができ、(2)整合素子及び無給電素子を異なる層に配置するため、第1の誘電体基板の厚みを調整することにより、整合素子と無給電素子の間の電磁的な結合を強くすることができ、(3)2枚の誘電体基板の間に配置される整合素子を含む誘電体基板のパターンの大きさを小さくすることができる。   According to this configuration, in addition to the above-described effects, (1) since two dielectric substrates are used, the thickness of the dielectric substrate is increased to increase the strength of the dielectric substrate. (2) Since the matching element and the parasitic element are arranged in different layers, the electromagnetic wave between the matching element and the parasitic element can be adjusted by adjusting the thickness of the first dielectric substrate. (3) The size of the pattern of the dielectric substrate including the matching element disposed between the two dielectric substrates can be reduced.

上記目的を達成する第2の手段として、パッチアンテナにおいて、パッチ素子の近傍に、寄生素子を配置することにより、広帯域化を図ることを応用した。すなわち、導波管/伝送線路変換器において、整合素子の近傍かつ整合素子と導波方向に同一の層に、無給電素子を配置することにより、広帯域化を図ることができ、誘電体基板のパターンの配置精度及び誘電体基板のパターンと導波管の間の位置精度が低いと想定される実際の場合においても、低い反射特性及び高い透過特性を再現性よく満足することができる。   As a second means for achieving the above object, in the patch antenna, the application of widening the band by arranging a parasitic element in the vicinity of the patch element is applied. That is, in the waveguide / transmission line converter, by providing a parasitic element in the same layer in the vicinity of the matching element and in the waveguide direction as the matching element, the bandwidth can be increased. Even in the actual case where the pattern placement accuracy and the positional accuracy between the pattern of the dielectric substrate and the waveguide are assumed to be low, low reflection characteristics and high transmission characteristics can be satisfied with good reproducibility.

具体的には、本発明は、導波管により伝送される電力と、伝送線路により伝送される電力と、を相互に変換する導波管/伝送線路変換器であって、前記導波管の開口部を塞ぐように配置される誘電体基板と、前記誘電体基板の表面かつ前記導波管の内部に配置され、前記伝送線路と結合され、前記誘電体基板の周囲の環境における実効波長の電磁波を定在波として立てるための共振長を前記導波管内の電界方向及び前記伝送線路の給電方向に有する整合素子と、前記誘電体基板の表面かつ前記導波管の内部に配置され、前記整合素子と電磁的に結合され、前記整合素子が有する共振長と異なる共振長を有する無給電素子と、を備えることを特徴とする導波管/伝送線路変換器である。   Specifically, the present invention is a waveguide / transmission line converter that mutually converts power transmitted by a waveguide and power transmitted by a transmission line, A dielectric substrate disposed so as to close the opening, and disposed on a surface of the dielectric substrate and inside the waveguide, coupled to the transmission line, and having an effective wavelength in an environment around the dielectric substrate; A matching element having a resonance length for raising an electromagnetic wave as a standing wave in an electric field direction in the waveguide and a feeding direction of the transmission line, and disposed on the surface of the dielectric substrate and in the waveguide, A waveguide / transmission line converter comprising: a parasitic element that is electromagnetically coupled to a matching element and has a resonance length different from that of the matching element.

この構成によれば、上述の効果に加え、1枚のみの誘電体基板を使用するため、導波管/伝送線路変換器の製造を容易にすることができる。   According to this configuration, since only one dielectric substrate is used in addition to the above-described effects, the manufacture of the waveguide / transmission line converter can be facilitated.

このように、本発明は、ミリ波帯等の高い周波数帯を用いる導波管/伝送線路変換器において、誘電体基板のパターンの配置精度及び誘電体基板のパターンと導波管の間の位置精度が低いと想定される実際の場合においても、低い反射特性及び高い透過特性を再現性よく満足することができる。   As described above, according to the present invention, in the waveguide / transmission line converter using a high frequency band such as the millimeter wave band, the placement accuracy of the pattern of the dielectric substrate and the position between the pattern of the dielectric substrate and the waveguide Even in an actual case where accuracy is assumed to be low, low reflection characteristics and high transmission characteristics can be satisfied with good reproducibility.

従来技術の導波管/伝送線路変換器の構成を示す図である。It is a figure which shows the structure of the waveguide / transmission line converter of a prior art. 従来技術の導波管/伝送線路変換器の特性を示す図である。It is a figure which shows the characteristic of the waveguide / transmission line converter of a prior art. 第1の実施形態の第1の導波管/伝送線路変換器の構成を示す図である。It is a figure which shows the structure of the 1st waveguide / transmission line converter of 1st Embodiment. 第1の実施形態の第2の導波管/伝送線路変換器の構成を示す図である。It is a figure which shows the structure of the 2nd waveguide / transmission line converter of 1st Embodiment. 第1の実施形態の導波管/伝送線路変換器の特性を示す図である。It is a figure which shows the characteristic of the waveguide / transmission line converter of 1st Embodiment. 第2の実施形態の導波管/伝送線路変換器の構成を示す図である。It is a figure which shows the structure of the waveguide / transmission line converter of 2nd Embodiment.

添付の図面を参照して本発明の実施形態を説明する。以下に説明する実施形態は本発明の実施の例であり、本発明は以下の実施形態に制限されるものではない。   Embodiments of the present invention will be described with reference to the accompanying drawings. The embodiments described below are examples of the present invention, and the present invention is not limited to the following embodiments.

(第1の実施形態)
第1の実施形態の第1の導波管/伝送線路変換器の構成を図3に示す。導波管/伝送線路変換器2は、整合素子28及び無給電素子29を導波方向に異なる層に配置され、第1の誘電体基板23を導波管21の外部に配置される。導波管/伝送線路変換器2を平面アレーアンテナに適用する場合には、複数の導波管/伝送線路変換器2のパターンを第1及び第2の誘電体基板23、24に形成すればよい。
(First embodiment)
FIG. 3 shows the configuration of the first waveguide / transmission line converter according to the first embodiment. In the waveguide / transmission line converter 2, the matching element 28 and the parasitic element 29 are arranged in different layers in the waveguide direction, and the first dielectric substrate 23 is arranged outside the waveguide 21. When the waveguide / transmission line converter 2 is applied to a planar array antenna, a plurality of waveguide / transmission line converter 2 patterns are formed on the first and second dielectric substrates 23 and 24. Good.

左欄第1段は、導波管/伝送線路変換器2の側面断面図を示す。左欄第2段は、導波管/伝送線路変換器2の矢視C−C平面断面図を示す。右欄最上段は、導波管/伝送線路変換器2の矢視D−D平面断面図を示す。右欄第2段は、導波管/伝送線路変換器2の矢視E−E平面断面図を示す。右欄第3段は、整合素子28の共振長の方向の電界分布を示す。右欄最下段は、無給電素子29の共振長の方向の電界分布を示す。   The first column in the left column shows a side sectional view of the waveguide / transmission line converter 2. The second column in the left column shows a cross-sectional plan view taken along the line CC of the waveguide / transmission line converter 2. The uppermost column in the right column shows a cross-sectional view taken along the line DD of the waveguide / transmission line converter 2. The second column on the right column shows an EE plane cross-sectional view of the waveguide / transmission line converter 2 as viewed in the direction of the arrows. The third column on the right column shows the electric field distribution in the direction of the resonance length of the matching element 28. The lowermost column in the right column shows the electric field distribution in the direction of the resonance length of the parasitic element 29.

第1の実施形態の第2の導波管/伝送線路変換器の構成を図4に示す。導波管/伝送線路変換器3は、整合素子38及び無給電素子39を導波方向に異なる層に配置され、第1の誘電体基板33を導波管31の内部に配置される。導波管/伝送線路変換器3を平面アレーアンテナに適用する場合には、複数の導波管/伝送線路変換器3のパターンを第2の誘電体基板34に形成すればよい。   The configuration of the second waveguide / transmission line converter of the first embodiment is shown in FIG. In the waveguide / transmission line converter 3, the matching element 38 and the parasitic element 39 are arranged in different layers in the waveguide direction, and the first dielectric substrate 33 is arranged inside the waveguide 31. When the waveguide / transmission line converter 3 is applied to a planar array antenna, a plurality of waveguide / transmission line converter 3 patterns may be formed on the second dielectric substrate 34.

左欄第1段は、導波管/伝送線路変換器3の側面断面図を示す。左欄第2段は、導波管/伝送線路変換器3の矢視F−F平面断面図を示す。右欄最上段は、導波管/伝送線路変換器3の矢視G−G平面断面図を示す。右欄第2段は、導波管/伝送線路変換器3の矢視H−H平面断面図を示す。右欄第3段は、整合素子38の共振長の方向の電界分布を示す。右欄最下段は、無給電素子39の共振長の方向の電界分布を示す。   The first column in the left column shows a side sectional view of the waveguide / transmission line converter 3. The second column in the left column shows an FF plane cross-sectional view of the waveguide / transmission line converter 3 as viewed in the direction of arrows. The uppermost column in the right column shows an GG plane cross-sectional view of the waveguide / transmission line converter 3 as viewed in the direction of the arrows. The second column in the right column shows an HH plane cross-sectional view of the waveguide / transmission line converter 3 as viewed in the direction of the arrows. The third column on the right column shows the electric field distribution in the direction of the resonance length of the matching element 38. The lowermost column in the right column shows the electric field distribution in the direction of the resonance length of the parasitic element 39.

導波管/伝送線路変換器2は、第1の誘電体基板23、第2の誘電体基板24、短絡金属層25、金属部材26、接地金属層27、整合素子28及び無給電素子29を備える。導波管/伝送線路変換器3は、第1の誘電体基板33、第2の誘電体基板34、短絡金属層35、金属部材36、接地金属層37、整合素子38及び無給電素子39を備える。   The waveguide / transmission line converter 2 includes a first dielectric substrate 23, a second dielectric substrate 24, a short metal layer 25, a metal member 26, a ground metal layer 27, a matching element 28, and a parasitic element 29. Prepare. The waveguide / transmission line converter 3 includes a first dielectric substrate 33, a second dielectric substrate 34, a short-circuit metal layer 35, a metal member 36, a ground metal layer 37, a matching element 38, and a parasitic element 39. Prepare.

第1の誘電体基板23、33は、それぞれ、導波管21、31の開口部を塞ぐように配置される。第1の誘電体基板23は、導波管21の外部に配置され、平面アレーアンテナにおける複数の導波管/伝送線路変換器2のパターンを形成される。第1の誘電体基板33は、導波管31の内部に配置され、平面アレーアンテナにおける単一の導波管/伝送線路変換器3のパターンを形成される。第1の誘電体基板23、33の面は、それぞれ、導波管21、31の導波方向に垂直な面である。図3、4の右欄第2段において、第1の誘電体基板23、33のうちパターンが配置される部分は、白地で示され、第1の誘電体基板23、33のうちパターンが配置されない部分は、斜線で示される。   The first dielectric substrates 23 and 33 are disposed so as to close the openings of the waveguides 21 and 31, respectively. The first dielectric substrate 23 is disposed outside the waveguide 21 and is formed with a pattern of a plurality of waveguide / transmission line converters 2 in the planar array antenna. The first dielectric substrate 33 is disposed inside the waveguide 31 and is formed with a single waveguide / transmission line converter 3 pattern in the planar array antenna. The surfaces of the first dielectric substrates 23 and 33 are surfaces perpendicular to the waveguide direction of the waveguides 21 and 31, respectively. 3 and 4, the portion where the pattern is arranged in the first dielectric substrate 23, 33 is shown in white, and the pattern is arranged in the first dielectric substrate 23, 33. Portions that are not displayed are indicated by diagonal lines.

第2の誘電体基板24、34は、それぞれ、第1の誘電体基板23、33の表面かつ導波管21、31の外部に配置される。第2の誘電体基板24、34は、それぞれ、平面アレーアンテナにおける複数の導波管/伝送線路変換器2、3のパターンを形成される。第2の誘電体基板24、34の面は、それぞれ、導波管21、31の導波方向に垂直な面である。図3、4の左欄第2段及び右欄最上段において、第2の誘電体基板24、34のうちパターンが配置される部分は、白地で示され、第2の誘電体基板24、34のうちパターンが配置されない部分は、斜線で示される。   The second dielectric substrates 24 and 34 are disposed on the surfaces of the first dielectric substrates 23 and 33 and outside the waveguides 21 and 31, respectively. The second dielectric substrates 24 and 34 are each formed with a pattern of a plurality of waveguide / transmission line converters 2 and 3 in a planar array antenna. The surfaces of the second dielectric substrates 24 and 34 are surfaces perpendicular to the waveguide direction of the waveguides 21 and 31, respectively. 3 and 4, in the second column on the left column and the uppermost column on the right column, portions of the second dielectric substrates 24 and 34 where the patterns are arranged are shown in white, and the second dielectric substrates 24 and 34 are shown in white. A portion where no pattern is arranged is indicated by hatching.

短絡金属層25は、導波管21が延びていない側の第2の誘電体基板24の表面に配置され、第1及び第2の誘電体基板23、24を貫通する金属部材26及び第1の誘電体基板23の表面かつ導波管21の外枠に配置される接地金属層27により、導波管21と同電位に保持される。短絡金属層35は、導波管31が延びていない側の第2の誘電体基板34の表面に配置され、第2の誘電体基板34を貫通する金属部材36及び第2の誘電体基板34の表面かつ導波管31の外枠に配置される接地金属層37により、導波管31と同電位に保持される。導波管/伝送線路変換器2、3において、誘電体基板の積層方法に相違があるため、金属部材26、36がいずれの誘電体基板を貫通するか、接地金属層27、37がいずれの誘電体基板の表面に配置されるか、相違するのである。   The short-circuit metal layer 25 is disposed on the surface of the second dielectric substrate 24 on the side where the waveguide 21 does not extend, and the metal member 26 and the first metal member 26 penetrating the first and second dielectric substrates 23 and 24. The same potential as that of the waveguide 21 is maintained by the ground metal layer 27 disposed on the surface of the dielectric substrate 23 and on the outer frame of the waveguide 21. The short-circuit metal layer 35 is disposed on the surface of the second dielectric substrate 34 on the side where the waveguide 31 does not extend, and the metal member 36 that penetrates the second dielectric substrate 34 and the second dielectric substrate 34. Is held at the same potential as the waveguide 31 by the ground metal layer 37 disposed on the surface of the waveguide 31 and on the outer frame of the waveguide 31. In the waveguide / transmission line converters 2 and 3, there is a difference in the method of laminating the dielectric substrates. Therefore, which of the dielectric substrates the metal members 26 and 36 penetrate, and which of the ground metal layers 27 and 37 is It is arranged on the surface of the dielectric substrate or different.

整合素子28、38は、それぞれ、第1及び第2の誘電体基板(23、24)、(33、34)の間に配置され、第2の誘電体基板24、34を介して伝送線路22、32と電磁的に結合され、第1及び第2の誘電体基板(23、24)、(33、34)の周囲の環境における実効波長λの電磁波を定在波として立てるための共振長(ほぼλ/2)を、導波管21、31内の電界方向及び伝送線路22、32の給電方向に有する。 The matching elements 28 and 38 are disposed between the first and second dielectric substrates (23, 24) and (33, 34), respectively, and the transmission line 22 is interposed via the second dielectric substrates 24 and 34. , 32 and a resonance length for standing as an electromagnetic wave having an effective wavelength λ g in an environment around the first and second dielectric substrates (23, 24), (33, 34). (Approximately λ g / 2) in the electric field direction in the waveguides 21 and 31 and the feeding direction of the transmission lines 22 and 32.

無給電素子29、39は、それぞれ、第1の誘電体基板23、33の表面かつ導波管21、31の内部に配置され、整合素子28、38と電磁的に結合され、整合素子28、38が有する共振長(ほぼλ/2)と異なる共振長(ほぼλ’/2)を有する。 The parasitic elements 29 and 39 are disposed on the surfaces of the first dielectric substrates 23 and 33 and inside the waveguides 21 and 31, respectively, and are electromagnetically coupled to the matching elements 28 and 38. 38 has a resonance length (approximately λ g ' / 2) that is different from the resonance length (approximately λ g / 2) of 38.

ここで、整合素子28、38及び伝送線路22、32は、別層に存在する。そして、伝送線路22、32の先端形状は、切り欠き付きのスタブ又はスロットである。よって、整合素子28、38及び伝送線路22、32は、電磁的な結合を実現することができる。   Here, the matching elements 28 and 38 and the transmission lines 22 and 32 exist in different layers. And the front-end | tip shape of the transmission lines 22 and 32 is a stub or slot with a notch. Therefore, the matching elements 28 and 38 and the transmission lines 22 and 32 can realize electromagnetic coupling.

図3、4の説明では、金属部材26は、導波管21の2面の広壁面及び2面の狭壁面の断面に沿って第1及び第2の誘電体基板23、24を貫通する「スルーホール」で形成されており、金属部材36は、導波管31の2面の広壁面及び2面の狭壁面の断面に沿って第2の誘電体基板34を貫通する「スルーホール」で形成されている。変形例としては、金属部材26は、導波管21の2面の広壁面及び2面の狭壁面の断面に沿って第1及び第2の誘電体基板23、24を貫通する「導体壁」であってもよく、金属部材36は、導波管31の2面の広壁面及び2面の狭壁面の断面に沿って第2の誘電体基板34を貫通する「導体壁」であってもよい。   3 and 4, the metal member 26 penetrates the first and second dielectric substrates 23 and 24 along the cross sections of the two wide wall surfaces and the two narrow wall surfaces of the waveguide 21. The metal member 36 is a “through hole” that penetrates the second dielectric substrate 34 along the cross sections of the two wide wall surfaces and the two narrow wall surfaces of the waveguide 31. Is formed. As a modification, the metal member 26 is a “conductor wall” that penetrates the first and second dielectric substrates 23 and 24 along the cross sections of the two wide wall surfaces and the two narrow wall surfaces of the waveguide 21. The metal member 36 may be a “conductor wall” that penetrates the second dielectric substrate 34 along the cross sections of the two wide wall surfaces and the two narrow wall surfaces of the waveguide 31. Good.

第1の実施形態の導波管/伝送線路変換器の特性を図5に示す。このように、図5に示した反射特性は、導波管/伝送線路変換器2、3の中心周波数のまわりの広帯域において低くなり、図5に示した透過特性は、導波管/伝送線路変換器2、3の中心周波数のまわりの広帯域において高くなる。ここで、図5に示した低い反射特性及び高い透過特性は、第1及び第2の誘電体基板(23、24)、(33、34)のパターンの配置精度及び第1及び第2の誘電体基板(23、24)、(33、34)のパターンと導波管21、31の間の位置精度が高いと想定される理想の場合における、シミュレーション結果である。   The characteristics of the waveguide / transmission line converter of the first embodiment are shown in FIG. As described above, the reflection characteristic shown in FIG. 5 becomes low in a wide band around the center frequency of the waveguide / transmission line converters 2 and 3, and the transmission characteristic shown in FIG. It becomes high in a wide band around the center frequency of the converters 2 and 3. Here, the low reflection characteristic and the high transmission characteristic shown in FIG. 5 are the pattern placement accuracy of the first and second dielectric substrates (23, 24) and (33, 34) and the first and second dielectrics. It is a simulation result in the ideal case where the positional accuracy between the pattern of the body substrates (23, 24), (33, 34) and the waveguides 21, 31 is assumed to be high.

よって、第1及び第2の誘電体基板(23、24)、(33、34)のパターンの配置精度及び第1及び第2の誘電体基板(23、24)、(33、34)のパターンと導波管21、31の間の位置精度が低いと想定される実際の場合において、図5に示した低い反射特性及び高い透過特性は、再現性よく満足される可能性が高い。このことは、ミリ波帯等の高い周波数帯を用いる導波管/伝送線路変換器2、3において、特に顕著となる。   Therefore, the pattern placement accuracy of the first and second dielectric substrates (23, 24), (33, 34) and the pattern of the first and second dielectric substrates (23, 24), (33, 34). In the actual case where the positional accuracy between the waveguides 21 and 31 is assumed to be low, the low reflection characteristics and high transmission characteristics shown in FIG. 5 are likely to be satisfied with good reproducibility. This is particularly noticeable in the waveguide / transmission line converters 2 and 3 using a high frequency band such as a millimeter wave band.

そして、第1の実施形態では、第2の実施形態と異なり、2枚の誘電体基板(23、24)、(33、34)を使用するため、厚みを増して誘電体基板(23、24)、(33、34)の強度を向上させたことにより、パターンと導波管21、31の間の位置精度を高くすることができる。   In the first embodiment, unlike the second embodiment, two dielectric substrates (23, 24), (33, 34) are used, so the thickness is increased and the dielectric substrates (23, 24) are used. ), (33, 34), the positional accuracy between the pattern and the waveguides 21, 31 can be increased.

さらに、第1の実施形態では、第2の実施形態と異なり、整合素子28、38及び無給電素子29、39を異なる層に配置するため、第1の誘電体基板(23、33)の厚みを調整することにより、整合素子28、38と無給電素子29、39の間の電磁的な結合を強くすることができ、2枚の誘電体基板(23、24)、(33、34)の間に配置される整合素子28、38を含む誘電体基板(23、24)、(33、34)のパターンの大きさを小さくすることができる。   Furthermore, in the first embodiment, unlike the second embodiment, since the matching elements 28 and 38 and the parasitic elements 29 and 39 are arranged in different layers, the thickness of the first dielectric substrate (23, 33). By adjusting the electromagnetic field, the electromagnetic coupling between the matching elements 28, 38 and the parasitic elements 29, 39 can be strengthened, and the two dielectric substrates (23, 24), (33, 34) The pattern size of the dielectric substrates (23, 24), (33, 34) including the matching elements 28, 38 disposed therebetween can be reduced.

(第2の実施形態)
第2の実施形態の導波管/伝送線路変換器の構成を図6に示す。導波管/伝送線路変換器4は、整合素子47及び無給電素子48を導波方向に同一の層に配置され、複数台数分のパターンを誘電体基板43に形成され、アレーアンテナの給電等に適用可能である。
(Second Embodiment)
The configuration of the waveguide / transmission line converter of the second embodiment is shown in FIG. In the waveguide / transmission line converter 4, the matching element 47 and the parasitic element 48 are arranged in the same layer in the waveguide direction, and a plurality of patterns are formed on the dielectric substrate 43 to feed the array antenna. It is applicable to.

最上段は、導波管/伝送線路変換器4の側面断面図を示す。第2段は、導波管/伝送線路変換器4の矢視I−I平面断面図を示す。第3段は、導波管/伝送線路変換器4の矢視J−J平面断面図を示す。第4段は、整合素子47の共振長の方向の電界分布を示す。最下段は、無給電素子48の共振長の方向の電界分布を示す。   The top row shows a side sectional view of the waveguide / transmission line converter 4. The second stage shows an I-I plane cross-sectional view of the waveguide / transmission line converter 4. The third stage shows a cross-sectional view taken along the line JJ of the waveguide / transmission line converter 4. The fourth stage shows the electric field distribution in the direction of the resonance length of the matching element 47. The bottom row shows the electric field distribution in the direction of the resonance length of the parasitic element 48.

導波管/伝送線路変換器4は、誘電体基板43、短絡金属層44、金属部材45、接地金属層46、整合素子47及び無給電素子48を備える。   The waveguide / transmission line converter 4 includes a dielectric substrate 43, a short-circuit metal layer 44, a metal member 45, a ground metal layer 46, a matching element 47 and a parasitic element 48.

誘電体基板43は、導波管41の開口部を塞ぐように配置される。誘電体基板43は、導波管41の外部に配置され、複数台数分のパターンを形成される。誘電体基板43の面は、導波管41の導波方向に垂直な面である。図6の第2、3段において、誘電体基板43のうちパターンが配置される部分は、白地で示され、誘電体基板43のうちパターンが配置されない部分は、斜線で示される。   The dielectric substrate 43 is disposed so as to close the opening of the waveguide 41. The dielectric substrate 43 is disposed outside the waveguide 41, and a plurality of patterns are formed. The surface of the dielectric substrate 43 is a surface perpendicular to the waveguide direction of the waveguide 41. In the second and third stages of FIG. 6, the portion of the dielectric substrate 43 where the pattern is arranged is indicated by a white background, and the portion of the dielectric substrate 43 where the pattern is not arranged is indicated by oblique lines.

短絡金属層44は、誘電体基板43の表面かつ導波管41の外部に配置され、誘電体基板43を貫通する金属部材45及び誘電体基板43の表面かつ導波管41の外枠に配置される接地金属層46により、導波管41と同電位に保持される。   The short-circuit metal layer 44 is disposed on the surface of the dielectric substrate 43 and outside the waveguide 41, and is disposed on the metal member 45 penetrating the dielectric substrate 43 and the surface of the dielectric substrate 43 and on the outer frame of the waveguide 41. The ground metal layer 46 is held at the same potential as the waveguide 41.

整合素子47は、誘電体基板43の表面かつ導波管41の内部に配置され、誘電体基板43を介して伝送線路42と電磁的に結合され、誘電体基板43の周囲の環境における実効波長λの電磁波を定在波として立てるための共振長(ほぼλ/2)を、導波管41内の電界方向及び伝送線路42の給電方向に有する。 The matching element 47 is disposed on the surface of the dielectric substrate 43 and inside the waveguide 41, is electromagnetically coupled to the transmission line 42 via the dielectric substrate 43, and has an effective wavelength in the environment around the dielectric substrate 43. A resonance length (approximately λ g / 2) for raising an electromagnetic wave of λ g as a standing wave is provided in the electric field direction in the waveguide 41 and the feeding direction of the transmission line 42.

無給電素子48は、誘電体基板43の表面かつ導波管41の内部に配置され、整合素子47と電磁的に結合され、整合素子47が有する共振長(ほぼλ/2)と異なる共振長(ほぼλ’/2)を有する。無給電素子48は、導波管41の広壁面の断面の方向に沿って、整合素子47に対して反対の位置に、それぞれ1枚ずつを配置されている。 The parasitic element 48 is disposed on the surface of the dielectric substrate 43 and inside the waveguide 41, is electromagnetically coupled to the matching element 47, and has a resonance length different from the resonance length (approximately λ g / 2) of the matching element 47. Has a length (approximately λ g '/ 2). One parasitic element 48 is arranged at a position opposite to the matching element 47 along the direction of the cross section of the wide wall surface of the waveguide 41.

ここで、整合素子47及び伝送線路42は、別層に存在する。そして、伝送線路42の先端形状は、切り欠き付きのスタブ又はスロットである。よって、整合素子47及び伝送線路42は、電磁的な結合を実現することができる。   Here, the matching element 47 and the transmission line 42 are in different layers. And the front-end | tip shape of the transmission line 42 is a stub or slot with a notch. Therefore, the matching element 47 and the transmission line 42 can realize electromagnetic coupling.

図6の説明では、金属部材45は、導波管41の2面の広壁面及び2面の狭壁面の断面に沿って誘電体基板43を貫通する「スルーホール」で形成されている。変形例としては、金属部材45は、導波管41の2面の広壁面及び2面の狭壁面の断面に沿って誘電体基板43を貫通する「導体壁」であってもよい。   In the description of FIG. 6, the metal member 45 is formed as a “through hole” that penetrates the dielectric substrate 43 along the cross sections of the two wide wall surfaces and the two narrow wall surfaces of the waveguide 41. As a modification, the metal member 45 may be a “conductor wall” that penetrates the dielectric substrate 43 along the cross sections of the two wide wall surfaces and the two narrow wall surfaces of the waveguide 41.

第2の実施形態において、第1の実施形態と同様に、反射特性は、導波管/伝送線路変換器4の中心周波数のまわりの広帯域において低くなり、透過特性は、導波管/伝送線路変換器4の中心周波数のまわりの広帯域において高くなる。   In the second embodiment, similar to the first embodiment, the reflection characteristic is low in a wide band around the center frequency of the waveguide / transmission line converter 4, and the transmission characteristic is the waveguide / transmission line. It becomes high in a wide band around the center frequency of the transducer 4.

よって、第2の実施形態において、第1の実施形態と同様に、誘電体基板43のパターンの配置精度及び誘電体基板43のパターンと導波管41の間の位置精度が高いと想定される理想の場合と比べて、誘電体基板43のパターンの配置精度及び誘電体基板43のパターンと導波管41の間の位置精度が低いと想定される実際の場合において、低い反射特性及び高い透過特性は、再現性よく満足される可能性が高い。このことは、ミリ波帯等の高い周波数帯を用いる導波管/伝送線路変換器4において、特に顕著となる。   Therefore, in the second embodiment, as in the first embodiment, it is assumed that the arrangement accuracy of the pattern of the dielectric substrate 43 and the positional accuracy between the pattern of the dielectric substrate 43 and the waveguide 41 are high. Compared to the ideal case, in the actual case where the arrangement accuracy of the pattern of the dielectric substrate 43 and the positional accuracy between the pattern of the dielectric substrate 43 and the waveguide 41 are assumed to be low, low reflection characteristics and high transmission The characteristics are likely to be satisfied with good reproducibility. This is particularly noticeable in the waveguide / transmission line converter 4 using a high frequency band such as a millimeter wave band.

そして、第2の実施形態では、第1の実施形態と異なり、1枚のみの誘電体基板43を使用するため、導波管/伝送線路変換器4の製造を容易にすることができる。   In the second embodiment, unlike the first embodiment, since only one dielectric substrate 43 is used, the manufacture of the waveguide / transmission line converter 4 can be facilitated.

本発明の導波管/伝送線路変換器は、ミリ波帯等の高い周波数帯を用いるアレーアンテナの給電等において、誘電体基板のパターンの配置精度及び誘電体基板のパターンと導波管の間の位置精度が低いと想定される実際の場合においても、低い反射特性及び高い透過特性を再現性よく満足する目的に対して、適用することが可能である。   The waveguide / transmission line converter according to the present invention provides a dielectric substrate pattern placement accuracy and a gap between the dielectric substrate pattern and the waveguide in feeding an array antenna using a high frequency band such as a millimeter wave band. Even in an actual case where the positional accuracy of the sensor is assumed to be low, it can be applied for the purpose of satisfying low reflection characteristics and high transmission characteristics with good reproducibility.

1、2、3、4:導波管/伝送線路変換器
11、21、31、41:導波管
12、22、32、42:伝送線路
13、43:誘電体基板
23、33:第1の誘電体基板
24、34:第2の誘電体基板
14、25、35、44:短絡金属層
15、26、36、45:金属部材
16、27、37、46:接地金属層
17、28、38、47:整合素子
29、39、48:無給電素子

1, 2, 3, 4: Waveguide / transmission line converters 11, 21, 31, 41: Waveguides 12, 22, 32, 42: Transmission lines 13, 43: Dielectric substrates 23, 33: First Dielectric substrates 24, 34: second dielectric substrates 14, 25, 35, 44: short-circuit metal layers 15, 26, 36, 45: metal members 16, 27, 37, 46: ground metal layers 17, 28, 38, 47: matching elements 29, 39, 48: parasitic elements

Claims (2)

導波管により伝送される電力と、
伝送線路により伝送される電力と、
を相互に変換する導波管/伝送線路変換器であって、
前記導波管の開口部を塞ぐように配置される第1の誘電体基板と、
前記第1の誘電体基板の表面かつ前記導波管の外部に配置される第2の誘電体基板と、
前記第1及び第2の誘電体基板の間に配置され、前記伝送線路と結合され、前記第1及び第2の誘電体基板の周囲の環境における実効波長の電磁波を定在波として立てるための共振長を前記導波管内の電界方向及び前記伝送線路の給電方向に有する整合素子と、
前記第1の誘電体基板の表面かつ前記導波管の内部に配置され、前記整合素子と電磁的に結合され、前記整合素子が有する共振長と異なる共振長を有する無給電素子と、
を備えることを特徴とする導波管/伝送線路変換器。
Power transmitted by the waveguide;
Power transmitted by the transmission line;
A waveguide / transmission line converter for converting between
A first dielectric substrate disposed so as to close the opening of the waveguide;
A second dielectric substrate disposed on the surface of the first dielectric substrate and outside the waveguide;
An electromagnetic wave disposed between the first and second dielectric substrates, coupled to the transmission line, and having an effective wavelength electromagnetic wave in a surrounding environment of the first and second dielectric substrates as a standing wave A matching element having a resonance length in the direction of the electric field in the waveguide and in the feeding direction of the transmission line;
A parasitic element disposed on the surface of the first dielectric substrate and inside the waveguide, electromagnetically coupled to the matching element, and having a resonance length different from that of the matching element;
A waveguide / transmission line converter comprising:
導波管により伝送される電力と、
伝送線路により伝送される電力と、
を相互に変換する導波管/伝送線路変換器であって、
前記導波管の開口部を塞ぐように配置される誘電体基板と、
前記誘電体基板の表面かつ前記導波管の内部に配置され、前記伝送線路と結合され、前記誘電体基板の周囲の環境における実効波長の電磁波を定在波として立てるための共振長を前記導波管内の電界方向及び前記伝送線路の給電方向に有する整合素子と、
前記誘電体基板の表面かつ前記導波管の内部に配置され、前記整合素子と電磁的に結合され、前記整合素子が有する共振長と異なる共振長を有する無給電素子と、
を備えることを特徴とする導波管/伝送線路変換器。
Power transmitted by the waveguide;
Power transmitted by the transmission line;
A waveguide / transmission line converter for converting between
A dielectric substrate disposed to close the opening of the waveguide;
A resonance length is disposed on the surface of the dielectric substrate and inside the waveguide, coupled to the transmission line, and configured to generate an electromagnetic wave having an effective wavelength as a standing wave in an environment around the dielectric substrate. A matching element having an electric field direction in the wave tube and a feeding direction of the transmission line;
A parasitic element disposed on the surface of the dielectric substrate and inside the waveguide, electromagnetically coupled to the matching element, and having a resonance length different from that of the matching element;
A waveguide / transmission line converter comprising:
JP2015058861A 2015-03-23 2015-03-23 Waveguide/transmission line converter Pending JP2016178571A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020129784A (en) * 2019-02-12 2020-08-27 パナソニック株式会社 High-frequency module
US11486900B2 (en) 2017-05-23 2022-11-01 Teknologian Tutkimuskeskus Vtt Oy Probe apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102821A (en) * 1999-09-29 2001-04-13 Toyota Central Res & Dev Lab Inc High frequency package
US20070085626A1 (en) * 2005-10-19 2007-04-19 Hong Yeol Lee Millimeter-wave band broadband microstrip-waveguide transition apparatus
JP2011223203A (en) * 2010-04-07 2011-11-04 Nippon Pillar Packing Co Ltd Waveguide/planar line converter and high frequency circuit
JP2013138356A (en) * 2011-12-28 2013-07-11 Nagoya Institute Of Technology Planar line waveguide converter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102821A (en) * 1999-09-29 2001-04-13 Toyota Central Res & Dev Lab Inc High frequency package
US20070085626A1 (en) * 2005-10-19 2007-04-19 Hong Yeol Lee Millimeter-wave band broadband microstrip-waveguide transition apparatus
JP2011223203A (en) * 2010-04-07 2011-11-04 Nippon Pillar Packing Co Ltd Waveguide/planar line converter and high frequency circuit
JP2013138356A (en) * 2011-12-28 2013-07-11 Nagoya Institute Of Technology Planar line waveguide converter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11486900B2 (en) 2017-05-23 2022-11-01 Teknologian Tutkimuskeskus Vtt Oy Probe apparatus
JP2020129784A (en) * 2019-02-12 2020-08-27 パナソニック株式会社 High-frequency module
JP7267027B2 (en) 2019-02-12 2023-05-01 パナソニックホールディングス株式会社 high frequency module

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