JP2016170212A - Solid-state imaging device and camera - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve focus detection accuracy by means of a focus detection pixel as maintaining convergence efficiency of a microlens with a position of the microlens of each pixel adjusted, in a solid-state imaging device including a pixel array having a plurality of pixels including an image pick-up pixel and a focus detection pixel arrayed.SOLUTION: A solid-state imaging device comprises a pixel array having a plurality of pixels including an image pick-up pixel and a focus detection pixel arrayed so as to form a plurality of rows and a plurality of columns on a substrate, in which each pixel has a photoelectric conversion unit and a microlens corresponding to the photoelectric conversion unit. The plurality of rows includes a first row that has the focus detection pixel arranged, and a second row that has the image pick-up pixel arranged. As to each focus detection pixel of the first row, the microlens is arranged so as to shift to a center side of the pixel array along a row direction with respect to the corresponding photoelectric conversion unit, and as to each image pick-up pixel of the second row, the microlens is arranged at an interval different from the interval of the microlens of the focus detection pixel of the first row in the row direction.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a solid-state imaging device and a camera.

The solid-state imaging device includes a pixel array in which a plurality of pixels are arranged in a matrix, and some solid-state imaging devices include a focus detection pixel in addition to the imaging pixel. FIGS. 1A to _1C are schematic diagrams for explaining the structures of the focus detection pixels PX _{AF_A} and PX _{AF_B} and the imaging pixel PX _IM in the region near the end in the pixel array, respectively.

In the focus detection pixel PX _{AF_A} illustrated in FIG. 1A, for example, the right beam is _blocked and the left beam is converted into the photoelectric conversion unit PD by the pupil division using the light blocking member M. Is detected. In the focus detection pixel PX _{AF_B} illustrated in FIG. _1B , of the light that has passed through the microlens ML by pupil division using the light shielding member M, for example, the left light beam is _blocked and the right light beam is converted into the photoelectric conversion unit PD. Is detected. In the imaging pixel PX _IM illustrated in FIG. 1C, light that has passed through the microlens ML is detected by the photoelectric conversion unit PD, and a pixel signal is formed based on the detected light. In an example of this structure, each of the microlenses ML in the focus detection pixels _{PX AF_A} and _{PX AF_B} and imaging pixels _{PX IM} is located directly above the photoelectric conversion unit PD.

Since a large oblique incident light component in the region in the vicinity of the end portion of the pixel array, for example, the focus detection pixels PX _{AF_A,} both of the left beam and right beam is will be detected, also in the focus detection pixels PX _{AF_B,} the left optical beam There is a possibility that both the right light beam and the right light beam are shielded. That is, according to the example of this structure, pupil division may not be performed properly in the pixels PX _{AF_A} and PX _{AF_B} , and focus detection accuracy may be reduced.

  Patent Document 1 discloses an example of adjusting the position of a micro lens of a focus detection pixel and how to determine the position. According to Patent Document 1, focus detection accuracy is improved.

JP 2009-290157 A

Here, the imaging pixel PX _IM is less affected by the fact that the oblique incident light component is larger than the focus detection pixels PX _{AF_A} and PX _{AF_B} . Therefore, for the imaging pixel PX _IM , it is conceivable to adjust the position of the microlens ML by a method different from the case of the focus detection pixels PX _{AF_A} and PX _{AF_B} . On the other hand, each microlens ML needs to be formed so that the spherical shape of the upper surface is maintained in order to prevent a reduction in light collection efficiency. For example, when the focus detection pixel PX _{AF_A} and the imaging pixel PX _IM are adjacent to each other, it is necessary to adjust the positions of the microlenses ML so that the spherical shape of the upper surface thereof is maintained.

  Patent Document 1 discloses an example of adjusting the position of the micro lens of the focus detection pixel and determining the position, but does not consider the position of the micro lens of the imaging pixel.

  The present invention relates to a solid-state imaging device including a pixel array in which a plurality of pixels including an imaging pixel and a focus detection pixel are arranged, and focus detection is performed while maintaining the light collection efficiency by adjusting the position of the microlens of each pixel. A novel technique for improving focus detection accuracy by pixels is provided.

  One aspect of the present invention relates to a solid-state imaging device, wherein the solid-state imaging device includes a plurality of pixels including an imaging pixel and a focus detection pixel arranged so as to form a plurality of rows and a plurality of columns on a substrate. The solid-state imaging device includes an array, and each pixel includes a photoelectric conversion unit and a microlens corresponding to the photoelectric conversion unit, and the plurality of rows include a focus detection pixel of the imaging pixel and the focus detection pixel. The first row and the second row in which the imaging pixels of the imaging pixels and the focus detection pixels are arranged, and the microlens corresponds to each focus detection pixel of the first row. The focus detection pixels of the first row in the row direction are arranged in the row direction with respect to the imaging pixels of the second row, arranged so as to shift in the row direction toward the center side of the pixel array with respect to the photoelectric conversion unit. Of the micro Characterized in that it is arranged at different intervals from the spacing of the lens.

  According to the present invention, it is possible to improve the focus detection accuracy by the focus detection pixel while adjusting the position of the microlens of each pixel and maintaining the light collection efficiency.

It is a figure for demonstrating the example of the structure of the focus detection pixel and imaging pixel in the area | region of the edge part vicinity of a pixel array. It is a figure for demonstrating the structural example of a pixel array. It is a figure for demonstrating the position of the micro lens of each pixel. It is a figure for demonstrating the example of the cross-sectional structure of three pixels. It is a figure for demonstrating the structural example of the micro lens of each pixel. It is a figure for demonstrating the structural example of a camera.

(First example)
FIG. 2 is a schematic diagram for explaining a first example of the pixel array A _PX provided in the solid-state imaging device (referred to as “solid-state imaging device 100”) according to the present invention. The pixel array A _PX includes a plurality of pixels PX arranged to form a plurality of rows and a plurality of columns on the substrate. The plurality of pixels PX are pixels PX _AF (referred to as “focus detection pixels PX _AF ”) for performing focus detection by the phase difference detection method, in addition to the imaging pixels PX _IM (referred to as “imaging pixels PX _IM ”). including.

Each of the pixels PX _IM and PX _AF includes, for example, a photoelectric conversion unit (referred to as “photoelectric conversion unit PD”) and a corresponding microlens (referred to as “microlens ML”). Further, the imaging pixel PX _IM has an opening mask (referred to as “opening mask MS _IM ”) for preventing leakage light to the adjacent pixel and leakage light from the adjacent pixel. The focus detection pixel PX _AF has an aperture mask (hereinafter referred to as “aperture mask MS _AF ”) for performing pupil division, and one of the light beams that has passed through the microlens ML by the aperture mask MS _AF . The other light beam is made incident on the photoelectric conversion portion PD while shielding the light.

In FIG. 2 of the present example, among the plurality of rows of the pixel array A _PX , only the focus detection pixel PX _AF is arranged in a predetermined row, and only the imaging pixel PX _IM is arranged in the other rows. . Specifically, an example in which m is an integer equal to or greater than 1 and the focus detection pixels PX _AF are arranged in the R2 and R (m + 1) rows and the imaging pixels PX _IM are arranged in the other rows is illustrated. doing. In this example, it is assumed that each focus detection pixel PX _AF is configured to detect a phase difference in the row direction.

FIG. 3A illustrates an example of a structure in a plan view (hereinafter simply referred to as “plan view”) of the upper surface of the substrate with respect to pixels of 2 rows × 2 columns in the central region RA of the pixel array _APX . It is a schematic diagram for. In the pixel array _APX , the central region RA is a region in the center of the plurality of rows and in the vicinity thereof and in the center of the plurality of columns and in the vicinity thereof. In the example of FIG. 2, the central area RA is an area of the Rm-th row to the R (m + 1) -th row and the Cn-th column to the C (n + 1) -th column (n is an integer of 1 or more).

In the central region RA, the light component incident perpendicularly to the substrate (normally incident light component) is larger than the light component incident obliquely to the substrate (obliquely incident light component). Therefore, in each of the pixels PX _IM and PX _{AF in} the central region RA, the microlens ML is located immediately above the photoelectric conversion unit PD. That is, in plan view, the center (or the center of gravity) of the photoelectric conversion unit PD and the center of the microlens ML substantially coincide with each other. Alternatively, in a cross section in the row direction or the column direction, a virtual line perpendicular to the upper surface of the substrate has a center between one end and the other end of the photoelectric conversion unit PD, and one end and the other end of the microlens ML. It may be expressed as substantially passing through the center of the edge. In the imaging pixel PX _IM , the imaginary line further passes substantially through the center of one end and the other end of the aperture mask MS _{IM. In} the focus detection pixel PX _AF , the virtual line further includes the aperture mask MS _AF . It can be said that it substantially passes through one end.

FIG. 3B is a schematic diagram for explaining an example of a structure in plan view of the pixels PX for 3 rows × 2 columns in the corner region RB of the pixel array _APX . The corner area RB is an area in the vicinity of the corner of the pixel array _APX and in the vicinity thereof, and in the example of FIG. In the corner region RB, the oblique incident light component is larger than the normal incident light component. Therefore, at least the focus detection pixel PX _AF needs to adjust the position of the microlens ML particularly when each focus detection pixel PX _AF is configured to detect the phase difference in the row direction.

According to FIG. 3B of this example, the position of the micro lens ML of the focus detection pixel PX _AF is shifted only in the row direction toward the center of the pixel array A _PX with respect to the photoelectric conversion unit PD in plan view. Has been. “Shift along only the row direction” indicates that the position of the microlens ML is not substantially shifted in the column direction with respect to the photoelectric conversion unit PD. In this example, the mode in which the position of the micro lens ML of the imaging pixel PX _IM is not shifted in either the row direction or the column direction with respect to the photoelectric conversion unit PD is illustrated. However, the position is the photoelectric conversion unit PD. May be shifted only along the row direction.

According to this example, the position of the microlens ML of the focus detection pixel PX _AF is shifted only in the row direction. Therefore, when the microlens ML and the microlens ML of the pixel PX in the adjacent row (the row adjacent to the row to which the pixel PX _AF belongs) are in contact or too close to each other, the spherical shape of the upper surface thereof is broken. Can be prevented. For example, the concave portion formed at the boundary between the microlens ML and the adjacent microlens ML from the top of the microlens ML in the direction perpendicular to the upper surface of the substrate with respect to the height of the microlens ML. To the distance. In this case, the individual heights of the microlenses ML are made uniform by preventing the contact of the microlenses ML between the adjacent rows described above.

In this example, when the position of the micro lens ML of the focus detection pixel PX _AF is shifted in the row direction, the width of the micro lens ML in the row direction is reduced. That is, in the example of FIGS. 3A to 3B, each of the micro lenses ML of the focus detection pixel PX _AF has an elliptical shape in plan view. Specifically, the width in the row direction of each of the micro lenses ML is smaller than the width in the column direction. For example, when the distance between the microlenses ML of the two imaging pixels _{PX IM} adjacent to each other (the pitch) is d, the distance d1 between the microlenses ML of the microlens ML of the two focus detection pixels _{PX AF} adjacent to each other, smaller than d. Along with it, in between the imaging pixel PX _IM and the focus detection pixels PX _AF, the curvature of the top surface of the spherical shape of the microlens ML are different from each other. According to this example, since it is not necessary to reduce the width of the microlens ML in the column direction, it is possible to suppress a decrease in the light collection efficiency of the microlens ML. These are the cases where the size in the row direction of the pixel array A _PX is larger than the size in the column direction (that is, the outer shape of the pixel array A _PX in plan view is a rectangular shape having long sides and short sides). Effective if the long side direction is the row direction).

The “shift” of the position of the microlens ML in a certain pixel PX may be defined by the shift of the center of the microlens ML with respect to the center of the photoelectric conversion unit PD in plan view. It may be defined in a relative relationship. The shift amount of the micro lens ML of the pixel PX follows the pixel position in the pixel array A _PX of the pixel _PX . Specifically, for example, the shift amount of the microlens ML of the pixel PX located in the region near the end of the pixel array A _PX is the amount of shift of the other pixels PX located on the center side of the pixel array A _PX from the pixel PX. It is larger than the shift amount of the microlens ML. In the example of FIG. 3B, the size of the pixel array A _PX is 23.4 mm (size in the row direction) × 16.7 mm (size in the column direction), and the micro lens ML of the focus detection pixel PX _AF. The reduction ratio in the row direction is 0.99995. In this case, the shift amount (Δd in the drawing) of the micro lens ML of the focus detection pixel PX _AF in the R2 row and the C1 column is about 0.5 μm.

FIG. 3C shows, as a reference example, the structure in plan view of the pixels PX for 3 rows × 2 columns in the corner region RB, as in FIG. According to this example, in the corner region RB, the two focus detection pixels _{PX AF} of the row R2 and the C1~C2 column, the position of the microlens ML is a center of the pixel array _{A PX} row and column directions of the Shifted along both sides.

  Here, FIG. 4A shows a cross-sectional structure taken along the cut line X1-X1 'in the column direction with respect to FIG. 3B of this example. FIG. 4B shows a cross-sectional structure taken along the cut line X2-X2 ′ in the column direction with respect to FIG. 3C of the reference example. For each pixel PX, a structure including an insulating member OX and members MT1 to MT3 (wiring patterns, light shielding portions, etc.) formed in the insulating member OX on the substrate SUB on which the photoelectric conversion portion PD is formed. The ST is disposed, and the microlens ML is disposed on the structure ST.

According to the reference examples (FIG. 3C and FIG. 4B), the position of the micro lens ML of the focus detection pixel PX _AF is shifted in the column direction, and the micro lens ML is in contact between adjacent rows. For this reason, the spherical shape of the upper surface of the microlens ML is collapsed, and the light collection efficiency of the microlens ML may be reduced. On the other hand, according to this example (FIGS. 3B and 4A), the position of the micro lens ML of the focus detection pixel PX _AF (and the imaging pixel PX _IM ) is not shifted in the column direction. . Therefore, it is possible to prevent the contact of the microlenses ML between adjacent rows, and it is advantageous to improve the focus detection accuracy by the focus detection pixels while maintaining the light collection efficiency by adjusting the positions of the microlenses of each pixel. It is.

It should be noted that when the image pickup pixel PX _IM is also adjusted by shifting the position of the microlens ML, the position may be shifted only in the row direction. Accordingly, the position of the microlens ML can be individually adjusted for each of the pixels PX _IM and PX _AF while preventing the contact of the microlens ML between the adjacent rows described above.

In the example of FIG. 2 has illustrated a plurality of two rows (second row R2 and the R (m + 1) rows) in the focus detection pixels PX _AF arranged aspects of the rows, the focus detection pixels PX _AF May be arranged in a larger number of rows. In the example of FIG. 2, an example in which the plurality of focus detection pixels PX _AF are arranged only in the row direction is illustrated, but the rows and columns may be reversed. In other words, the plurality of focus detection pixels PX _AF may be arranged only in the column direction, and the position of the micro lens ML of each focus detection pixel PX _AF may be shifted only in the column direction. Further, for example, the plurality of focus detection pixels PX _AF may be arranged in a cross shape. In this case, the position of the micro lens ML of each focus detection pixel PX _AF may be shifted only in the row direction (or column direction).

(Second example)
In the first example described above, in order to facilitate understanding, an example in which only the focus detection pixel PX _AF is arranged in a predetermined row and only the imaging pixel PX _IM is arranged in another row is illustrated. Is not limited to this embodiment. That is, both the imaging pixel PX _IM and the focus detection pixel PX _AF may be arranged in an arbitrary row in the pixel array A _PX . This will be described below with reference to FIG.

  FIG. 5A shows an example where both the imaging pixels and the focus detection pixels are arranged in the same row. In order to make the drawing easier to see, only necessary symbols are shown in addition to the section of the pixel PX and the outer shape of the microlens ML.

According to the example of FIG. 5A, an image (referred to as “A image”) is formed in the R2 row and the C1 column and the R2 row and the C3 column based on one light flux of the incident light. Focus detection pixels (referred to as “focus detection pixel PX _{AF_A} ” for distinction) are arranged. Further, in the R6th row and the C1th column and the R6th row and the C3th column, focus detection pixels (discrimination) for forming an image (referred to as “B image”) based on the other light flux of the incident light. _Therefore, “focus detection pixel PX _{AF_B} ” is provided). As in the first example, the position of the micro lens ML of the focus detection pixel PX _{AF_A} or PX _{AF_B} (PX _{AF_A,} etc.) is the row direction toward the center of the pixel array A _PX with respect to the photoelectric conversion unit PD in plan view. Is only shifted along.

The R2 row and the C2 column, the R2 row and the C4 column, the R6 row and the C2 column, and the R6 row and the C4 column are different from the imaging pixel PX _IM described in the first example. An imaging pixel PX _IM ′ is arranged. The other pixel positions, imaging pixels PX _IM are arranged. For example, the micro lens ML of the focus detection pixel PX _{AF_A} (corresponding to the first pixel) in the R2 row and the C1 column is shifted in the row direction. As a result, the interval between the micro lenses ML between the pixel PX _{AF_A} and the imaging pixel PX _IM ′ (corresponding to the second pixel) in the R2 row and the C2 column is mutually in the R1 row, the R3 row, and the like. This is different from the interval of the microlens ML between two adjacent pixels (corresponding to the third pixel and the fourth pixel).

Here, in the image pickup pixel _{PX IM} ', the size of the microlens ML (more specifically, the area in a plan view) is smaller than the size of the microlenses ML of the imaging pixel _{PX IM.} Therefore, no contact of the microlens ML or the like occurs between the focus detection pixel PX _{AF_A and the} like and the imaging pixel PX _IM ′ adjacent _{thereto in the} row direction. The same applies to the case where the position of the micro lens ML of the imaging pixel PX _IM ′ is shifted only in the row direction, whereby the position of the micro lens ML is individually set for each of the pixel PX _{AF_A and the} like and PX _IM ′. It can also be adjusted to. Note that the pixel signal from the imaging pixel PX _IM ′ may be amplified using an amplification factor larger than that used when amplifying pixel signals from other imaging pixels PX _IM in the subsequent signal processing. It may be corrected by other processing as appropriate.

FIG. 5B shows an example in which both the imaging pixels and the focus detection pixels are arranged in the same row, and shows an example in which a plurality of the above-described focus detection pixels PX _{AF_A} are arranged side by side. Here, four focus detection pixels _{PX AF_A} In the row R2 are arranged over the C1~C4 column, also, four focus detection pixels _{PX AF_B} In the R6 line is disposed across the first C1~C4 column . An imaging pixel PX _IM ′ is arranged in each of the R2th row and the C5th column and the R6th row and the C5th column. The effect similar to that of FIG. 5A can be obtained by the example of FIG.

FIG. 5C shows another example where both the imaging pixels and the focus detection pixels are arranged in the same row. In the example of FIG. _5C , the pixel positions of PX _IM and PX _IM ′, such as each pixel PX _{AF_A} , are the same as in FIG. 5A, but differ in the following points. That is, the size of the micro lens ML of the imaging pixel PX _IM ′ is equal to the size of the micro lens ML of the imaging pixel PX _IM , and the size of the micro lens ML such as the focus detection pixel PX _{AF_A is} the micro size of the imaging pixel PX _IM . It is smaller than the size of the lens ML. The effect similar to that of FIG. 5A can be obtained by the example of FIG. Further, according to the example of FIG. 5C, it is not necessary to perform specific processing on the pixel signal from the imaging pixel PX _IM ′ as in the example of FIG. On the other hand, for focus detection by the phase difference detection method, a peak value or a bottom value among a plurality of pixel signals obtained from the focus detection pixel PX _{AF_A} or the like may be used. Therefore, according to the example of FIG. 5C, the influence of reducing the size of the microlens ML such as the focus detection pixel PX _{AF_A} is smaller than the example of FIG.

(Other)
As mentioned above, although some suitable embodiments were illustrated, the present invention is not limited to these, a part may be changed in the range which does not deviate from the meaning, and each feature of each embodiment May be combined.

(Application example)
FIG. 6 is a diagram for explaining a configuration example of a camera to which the solid-state imaging device 100 shown in the above example is applied. In addition to the solid-state imaging device 100, the camera includes, for example, a processing unit 200, a CPU 300 (or processor), an operation unit 400, and an optical system 500 for forming a subject image on the imaging unit. The camera may further include a display unit 600 for displaying still images and moving images to the user, and a memory 700 for storing the data. Image data is obtained by the solid-state imaging device 100 based on incident light from the optical system 500, the image data is subjected to predetermined correction processing by the processing unit 200, and is output to the display unit 600 and the memory 700. . In addition, the setting information of each unit can be changed by the CPU 300 or the control method of each unit can be changed according to the photographing condition input by the user via the operation unit 400. Note that the concept of a camera includes not only a device mainly for photographing, but also a device (for example, a personal computer or a portable terminal) that is supplementarily provided with a photographing function.

100: solid-state imaging device, PX _IM : imaging pixel, PX _AF : focus detection pixel, A _PX : pixel array, PD: photoelectric conversion unit, ML: micro lens.

Claims (16)

A pixel array in which a plurality of pixels including an imaging pixel and a focus detection pixel are arranged to form a plurality of rows and a plurality of columns on a substrate is provided, and each pixel has a photoelectric conversion unit and a micro corresponding to the photoelectric conversion unit A solid-state imaging device having a lens,
The plurality of rows include a first row in which focus detection pixels of the imaging pixels and focus detection pixels are arranged, and a second row in which imaging pixels of the imaging pixels and focus detection pixels are arranged. ,
For each focus detection pixel in the first row, the microlens is arranged so as to shift along the row direction to the center side of the pixel array with respect to the corresponding photoelectric conversion unit,
The solid-state imaging device, wherein the imaging pixels of the second row are arranged at intervals different from the intervals of the microlenses of the focus detection pixels of the first row in the row direction. For each focus detection pixel in the first row and each imaging pixel in the second row, the microlens is arranged so as not to shift in the column direction of the pixel array with respect to the corresponding photoelectric conversion unit. The solid-state imaging device according to claim 1. The solid-state imaging device according to claim 1, wherein each focus detection pixel is configured to detect a phase difference in the row direction. The solid-state imaging device according to claim 3, wherein each focus detection pixel is provided with an aperture mask for performing phase difference detection in the row direction. In the first row, a first focus detection pixel and a second focus detection pixel located closer to an end of the pixel array than the first focus detection pixel are arranged,
5. The shift amount of the position of the microlens of the second focus detection pixel is larger than the shift amount of the position of the microlens of the first focus detection pixel. 6. The solid-state imaging device according to any one of the above. A pixel array in which a plurality of pixels including an imaging pixel and a focus detection pixel are arranged to form a plurality of rows and a plurality of columns on a substrate is provided, and each pixel has a photoelectric conversion unit and a micro corresponding to the photoelectric conversion unit A solid-state imaging device having a lens,
The plurality of rows include a first row in which imaging pixels and focus detection pixels are arranged, and a second row in which focus detection pixels are not arranged,
The focus detection pixels in the first row are first pixels, the imaging pixels adjacent to the first pixels on the center side of the pixel array in the first row are second pixels, and the focus detection pixels in the second row are mutually in the second row. When adjacent imaging pixels are the third pixel and the fourth pixel,
The microlens of the second pixel is smaller in size than the microlens of the first pixel,
The microlens of the first pixel is arranged so as to shift along the row direction to the center side of the pixel array with respect to the corresponding photoelectric conversion unit, and thereby the microlens of the first pixel The solid is characterized in that an interval between the second pixel and the microlens is different from an interval between the microlens of the third pixel and the microlens of the fourth pixel. Imaging device. A pixel array in which a plurality of pixels including an imaging pixel and a focus detection pixel are arranged to form a plurality of rows and a plurality of columns on a substrate is provided, and each pixel has a photoelectric conversion unit and a micro corresponding to the photoelectric conversion unit A solid-state imaging device having a lens,
The plurality of rows include a first row in which imaging pixels and focus detection pixels are arranged, and a second row in which focus detection pixels are not arranged,
The focus detection pixels in the first row are first pixels, the imaging pixels adjacent to the first pixels on the center side of the pixel array in the first row are second pixels, and the focus detection pixels in the second row are mutually in the second row. When adjacent imaging pixels are the third pixel and the fourth pixel,
The microlens of the first pixel is smaller in size than the microlens of the second pixel,
The microlens of the first pixel is arranged so as to shift along the row direction to the center side of the pixel array with respect to the corresponding photoelectric conversion unit, and thereby the microlens of the first pixel The solid is characterized in that an interval between the second pixel and the microlens is different from an interval between the microlens of the third pixel and the microlens of the fourth pixel. Imaging device. The microlenses of the first pixel, the second pixel, the third pixel, and the fourth pixel are arranged so as not to shift in the column direction of the pixel array with respect to the corresponding photoelectric conversion unit. The solid-state imaging device according to claim 6 or 7, wherein: The solid-state imaging device according to any one of claims 6 to 8, wherein the first pixel is configured to detect a phase difference in the row direction. The solid-state imaging device according to claim 9, wherein each focus detection pixel is provided with an aperture mask for performing phase difference detection in the row direction. The first row further includes another focus detection pixel located closer to the end of the pixel array than the first pixel,
11. The shift amount of the position of the microlens of the other focus detection pixel is larger than the shift amount of the position of the microlens of the first pixel. 11. The solid-state imaging device described in 1. The outer shape of the pixel array is a rectangular shape having a long side and a short side,
The solid-state imaging device according to any one of claims 1 to 11, wherein the row direction is a long-side direction of the rectangular shape. The microlens of each focus detection pixel is elliptical in a plan view with respect to the upper surface of the substrate, and the width of the microlens in the row direction is smaller than the width in the column direction. The solid-state imaging device according to any one of claims 1 to 12. The height of the microlens is a distance in a direction perpendicular to the upper surface of the substrate, from the top of the microlens to a recess formed at the boundary between the microlens and the adjacent microlens. The solid-state imaging device according to any one of claims 1 to 13, wherein the height of the microlens of each pixel is equal to each other when the distance is set to. 15. The curvature of the microlens of each focus detection pixel and the curvature of the microlens of each imaging pixel are different from each other in the cross section in the row direction. The solid-state imaging device described in 1. The solid-state imaging device according to any one of claims 1 to 15,
And a processor for processing a signal from the solid-state imaging device.

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