JP2016167484A - Substrate processing apparatus, temperature control plate, and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which prevents deterioration of throughput of substrate processing and enables partial substrate temperature control.SOLUTION: A COR processing device 14 serving as a substrate processing apparatus includes: a chamber 36 having a sealed structure; heaters 59 embedded in a ceiling part 41a and a side wall part 41b of a lid part 41 forming the chamber 36; and a stage 37 which is disposed in the chamber 36 and configured to place a wafer W thereon. A pattern disc 60 is disposed between the wafer W and the stage 37. Hard alumite treatment is partially performed in the pattern disc 60. The pattern disc 60 has a first thermal emissivity change region 60a and a thermal emissivity non-change region which have different thermal emissivity.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a substrate processing apparatus, a temperature control plate, and a substrate processing method, and more particularly to a substrate processing apparatus, a temperature control plate, and a substrate processing method for performing a process involving temperature adjustment on a substrate.

  In a process of chemically etching and removing an oxide film formed on a wafer as a substrate, for example, a COR (Chemical Oxide Removal) process, the temperature of the wafer affects the etching rate. By the way, the temperature of the wafer is mainly controlled by a heater or a refrigerant flow path built in the stage on which the wafer is placed, but a wall heater for preventing deposition of deposits is built in the wall of the chamber for accommodating the wafer. The wafer receives radiant heat not only from the stage heater but also from the wall heater. In particular, the radiant heat of the wall heater does not uniformly heat the wafer, resulting in a non-uniform wafer temperature. Correspondingly, it is necessary to partially control the wafer temperature in order to achieve processing uniformity.

  Conventionally, a mounting table on which a wafer is placed is divided into a central member facing the central portion of the wafer and a peripheral member facing the peripheral portion of the wafer, and the temperature of the central member and the temperature of the peripheral member are controlled independently. Thus, it is known to perform partial temperature control of the wafer (see, for example, Patent Document 1).

  However, in the mounting table in Patent Document 1, since the region where the temperature of the central member and the peripheral member can be adjusted in the wafer cannot be changed, the central mounting having a shape different from that of the central member between the wafer and the central member. By placing a mounting member and a peripheral mounting member having a shape different from that of the peripheral member between the wafer and the peripheral member, the central member and the peripheral member of the wafer are different from the region where the temperature can be adjusted. There has also been proposed a mounting table that can adjust the temperature of an area corresponding to the shape of the central mounting member or the peripheral mounting member (see, for example, Patent Document 2). In particular, in the mounting table of Patent Document 2, by preparing a plurality of central mounting members and peripheral mounting members having different shapes and exchanging the central mounting member and peripheral mounting members, it is possible to adjust a plurality of types of temperatures. An area can be realized.

JP 09-017770 A International Publication No. 2013/187192

  However, since the central mounting member and the peripheral mounting member are made of different members and each have a shape corresponding to a region where the temperature can be adjusted, the shapes are complicated and difficult to handle. Therefore, the central mounting member and the peripheral mounting member need to be exchanged manually by the operator. Usually, since the mounting table is arranged in a processing chamber that can be depressurized, in order for the operator to manually replace the central mounting member and the peripheral mounting member, it is necessary to open the lid of the processing chamber, and the work time Will be enormous. In addition, when the lid of the processing chamber is opened, the processing chamber becomes atmospheric pressure. Therefore, it takes a long time to close the lid and depressurize the processing chamber after replacing the central mounting member and the peripheral mounting member. In particular, when the oxide film thickness distribution is different for each wafer, it is necessary to change the temperature-adjustable region by exchanging the central mounting member and the peripheral mounting member for each wafer. It cannot be performed smoothly. That is, the mounting table of Patent Document 2 has a problem that the throughput of the COR processing is lowered.

  An object of the present invention is to provide a substrate processing apparatus, a temperature control plate, and a substrate processing method capable of preventing a reduction in substrate processing throughput and performing partial temperature control of the substrate. It is in.

  In order to achieve the above object, a substrate processing apparatus of the present invention is a substrate processing apparatus including a mounting table on which a substrate is mounted. The substrate processing apparatus includes a single plate-like member and is disposed between the substrate and the mounting table. The temperature control plate has a different heat emissivity.

  In order to achieve the above object, a substrate processing apparatus of the present invention is a substrate processing apparatus including a mounting table on which a substrate is mounted. The substrate processing apparatus includes a single plate-like member and is disposed between the substrate and the mounting table. The temperature control plate is characterized by having partially different thicknesses.

  In order to achieve the above object, the temperature control plate of the present invention is arranged between a substrate and a mounting table on which the substrate is mounted, and has a partially different heat emissivity.

  In order to achieve the above object, the temperature control plate of the present invention is disposed between a substrate and a mounting table on which the substrate is mounted, and has a partially different thickness.

  In order to achieve the above object, a substrate processing method of the present invention is a substrate processing method using a mounting table on which a substrate is mounted, and is disposed between the substrate and the mounting table, and partially different heats. A plurality of temperature control plates having emissivity are prepared, and the temperature control plate arranged between the substrate and the mounting table is selected according to the substrate.

  In order to achieve the above object, a substrate processing method of the present invention is a substrate processing method using a mounting table on which a substrate is mounted, and is disposed between the substrate and the mounting table and has partially different thicknesses. A plurality of temperature control plates having the above are prepared, and the temperature control plate arranged between the substrate and the mounting table is selected according to the substrate.

  According to the present invention, the temperature control plate disposed between the substrate and the mounting table is composed of a single plate-like member and has partially different thermal emissivities. Therefore, the temperature control plate is configured by a plurality of members. The amount of heat flow from the substrate that passes through the temperature control plate can be partially changed. That is, since the temperature of the substrate can be partially changed without making the handling of the temperature control plate difficult, it is possible to prevent a reduction in the throughput of the substrate processing and to prevent the partial adjustment of the substrate. Temperature control can be performed.

  According to the present invention, the temperature control plate disposed between the substrate and the mounting table is composed of one plate-like member and has a partially different thickness, so that the temperature control plate is not composed of a plurality of members. The amount of heat flow from the substrate that passes through the temperature control plate can be partially changed. That is, since the temperature of the substrate can be partially changed without making the handling of the temperature control plate difficult, it is possible to prevent a reduction in the throughput of the substrate processing and to prevent the partial adjustment of the substrate. Temperature control can be performed.

  According to the present invention, a plurality of temperature control plates arranged between the substrate and the mounting table and having partially different heat emissivities are prepared, and the temperature control disposed between the substrate and the mounting table according to the substrate. Since the plate is selected, temperature control corresponding to each substrate can be performed, so that it is possible to prevent the processing results of each substrate from varying.

  According to the present invention, a plurality of temperature control plates arranged between the substrate and the mounting table and having partially different thicknesses are prepared, and the temperature control plate disposed between the substrate and the mounting table according to the substrate. Since it is selected, the temperature control corresponding to each substrate can be performed, and thus the processing results of each substrate can be prevented from varying.

1 is a plan view schematically showing a configuration of a substrate processing system including a COR processing apparatus as a substrate processing apparatus according to a first embodiment of the present invention. It is sectional drawing which shows the structure of the PHT processing apparatus in FIG. 1 roughly. It is sectional drawing which shows schematically the structure of the COR processing apparatus in FIG. It is a figure which shows the pattern disk as a temperature control board which concerns on this Embodiment, FIG. 4 (A) shows the pattern disk which has a 1st thermal emissivity change area | region, FIG.4 (B) shows the 2nd heat | fever. FIG. 4C shows a pattern disk having a third thermal emissivity change area. FIG. FIG. 5 is a cross-sectional view for explaining control of the amount of heat flow flowing from the wafer to the stage by the pattern disk of FIG. 4. FIGS. 6A and 6B are diagrams for explaining a method of placing the pattern disk and the wafer on the stage, FIG. 6A shows a method of placing the pattern disk on the stage, and FIG. 6B shows a method of placing the wafer on the stage. The placement method is shown. It is a flowchart which shows the procedure of the COR process as a substrate processing method concerning this Embodiment. It is a figure which shows the pattern disk as a temperature control board which concerns on this Embodiment, FIG. 8 (A) shows the pattern disk which has a 1st heat transmittance change area | region, FIG. 8 (B) shows the 2nd heat | fever. FIG. 8C shows a pattern disk having a third heat transmittance change region. FIG. FIG. 9 is a cross-sectional view for explaining control of the amount of heat flow flowing from the wafer to the stage by the pattern disk of FIG. 8. It is a top view which shows the pattern disk used for the temperature measurement of a wafer. FIG. 11 is a graph showing the temperature at each measurement location on the wafer W when the temperature of the stage in FIG. 3 is set to 35 ° C., and FIG. 11A shows the case where the pressure inside the chamber in FIG. 3 is set to 2000 mTorr. 11B shows the case where the pressure inside the chamber is set to 500 mTorr, FIG. 11C shows the case where the pressure inside the chamber is set to 100 mTorr, and FIG. 11D shows the inside of the chamber. 11E shows the case where the pressure of 20 mTorr is set, and FIG. 11E shows the case where the pressure inside the chamber is set to 0 mTorr. FIG. 12 is a graph showing the temperature at each measurement location on the wafer W when the stage temperature in FIG. 3 is set to 55 ° C., and FIG. 12 (A) shows the case where the pressure inside the chamber in FIG. 3 is set to 2000 mTorr. 12B shows the case where the pressure inside the chamber is set to 500 mTorr, FIG. 12C shows the case where the pressure inside the chamber is set to 100 mTorr, and FIG. 12D shows the inside of the chamber. FIG. 12E shows the case where the pressure inside the chamber is set to 0 mTorr. FIG. 13 is a graph showing the temperature at each measurement point on the wafer W when the temperature of the stage in FIG. 3 is set to 80 ° C., and FIG. 13A shows the case where the pressure inside the chamber in FIG. 3 is set to 2000 mTorr. 13 (B) shows the case where the pressure inside the chamber is set to 500 mTorr, FIG. 13 (C) shows the case where the pressure inside the chamber is set to 100 mTorr, and FIG. 13 (D) shows the inside of the chamber. FIG. 13E shows the case where the pressure inside the chamber is set to 0 mTorr.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  First, a first embodiment of the present invention will be described.

  FIG. 1 is a plan view schematically showing a configuration of a substrate processing system including a COR processing apparatus as a substrate processing apparatus according to the present embodiment.

  In FIG. 1, a substrate processing system 10 is provided adjacent to the loading / unloading section 11 and a loading / unloading section 11 for loading / unloading a disk-shaped semiconductor wafer (hereinafter simply referred to as “wafer”) W as a substrate. Two load lock chambers 12, a PHT processing device 13 that is provided adjacent to each load lock chamber 12, performs a PHT (Post Heat Treatment) process on the wafer W, and is provided adjacent to each PHT processing device 13. And a COR processing apparatus 14 that performs a COR process on the wafer W. In the substrate processing system 10, the load lock chamber 12, the PHT processing device 13, and the COR processing device 14 are arranged on a straight line in this order.

  The loading / unloading unit 11 has a rectangular parallelepiped loader chamber 16 in which a first wafer transfer mechanism 15 is provided. The first wafer transfer mechanism 15 has two transfer arms 15a and 15b that hold the wafer W substantially horizontally. Have A carrier mounting table 17 is disposed on a side of the loader chamber 16 in the longitudinal direction, and a plurality of, for example, three carriers C are mounted on the carrier mounting table 17. Each carrier C accommodates a plurality of wafers W. In the loading / unloading section 11, an orienter 18 is provided adjacent to the load lock chamber 12 for rotating the wafer W to optically determine the amount of eccentricity and aligning the wafer W based on the amount of eccentricity.

  In the loading / unloading section 11, the wafer W is moved freely in the horizontal direction or the vertical direction by the transfer arms 15 a and 15 b, and the wafer W is loaded and unloaded between the carriers C, the load lock chambers 12, and the orienter 18.

  Each load lock chamber 12 is connected to the load / unload section 11 with a gate valve 19 interposed between the load lock chamber 12 and a second wafer transfer mechanism 20 for transferring a wafer W is provided inside each load lock chamber 12. Provided. Each load lock chamber 12 has an exhaust mechanism and a gas introduction mechanism (both not shown), and the inside can be evacuated to a predetermined degree of vacuum.

  The second wafer transfer mechanism 20 has an articulated arm structure (not shown), and further has a U-shaped pick 20a that is moved by the articulated arm structure. The pick 20a places the wafer W thereon. In the second wafer transfer mechanism 20, the pick 20 a stays inside the load lock chamber 12 when the articulated arm structure is contracted, and when the articulated arm structure is extended, the pick 20 a extends to the PHT processing device 13 and further to the COR processing device 14. To reach. That is, the second wafer transfer mechanism 20 transfers the wafer W among the load lock chamber 12, the PHT processing apparatus 13, and the COR processing apparatus 14.

  Further, the substrate processing system 10 includes a control unit 21. The control unit 21 includes a process controller 22 having a microprocessor (computer), a user interface 23, and a storage unit 24. The process controller 22 controls the operation of each component of the substrate processing system 10. The user interface 23 includes a touch panel (not shown) that receives commands for managing the substrate processing system 10 input by the user, and a display (not shown) that visualizes and displays the operating status of each component of the substrate processing system 10. Have. The storage unit 24 is used for various processes executed by the substrate processing system 10, for example, for supplying process gas executed by the COR processing apparatus 14, exhausting the interior of a chamber 36 described later, and adjusting the temperature of a heater 59 described later. A processing recipe, which is a control program for causing each component of the substrate processing system 10 to perform a predetermined operation according to the control program and various processing conditions, and various databases are stored. In the substrate processing system 10, the processing recipe stored in the storage unit 24 is read, and the process controller 22 controls the operation of each component according to the processing recipe, so that COR processing and PHT processing are executed. .

  FIG. 2 is a cross-sectional view schematically showing the configuration of the PHT processing apparatus in FIG.

  2, the PHT processing apparatus 13 includes a chamber 25 that can be evacuated (exhausted) inside, and a stage 26 that is disposed inside the chamber 25 and places a wafer W in a substantially horizontal state. A heater 26 a is embedded in the stage 26, and the heater 26 a heats the wafer W placed on the stage 26 after being subjected to COR processing in the PHT processing apparatus 13, and vaporizes reaction products generated on the wafer W. The PHT process to be sublimated is executed.

  A loading / unloading port 25 a for loading / unloading the wafer W to / from the loadlock chamber 12 is provided on the loadlock chamber 12 side of the chamber 25, and the loading / unloading port 25 a is opened and closed by a gate valve 27. Further, a loading / unloading port 25 b for loading / unloading the wafer W to / from the COR processing device 14 is provided on the COR processing device 14 side of the chamber 25, and the loading / unloading port 25 b is opened and closed by a gate valve 28.

Further, the chamber 25 includes a gas supply mechanism 30 having a gas supply pipe 29 for supplying an inert gas, for example, nitrogen (N ₂ ) gas, and an exhaust mechanism 32 having an exhaust pipe 31 for exhausting the inside of the chamber 25. Is connected. The gas supply pipe 29 is connected to a nitrogen gas supply source 32a and has a mass flow controller 33 for controlling the flow rate of the nitrogen gas. The exhaust pipe 31 is connected to a vacuum pump 34 and has an open / close valve 35 that opens and closes the exhaust pipe 31.

  FIG. 3 is a cross-sectional view schematically showing the configuration of the COR processing apparatus in FIG.

In FIG. 3, the COR processing apparatus 14 includes a sealed chamber 36, a stage 37 (mounting table) that is placed inside the chamber 36 and places a wafer W in a substantially horizontal state, and is fluorinated inside the chamber 36. A processing gas supply mechanism 38 that supplies a processing gas such as hydrogen (HF) gas and ammonia (NH ₃ ) gas, and an exhaust mechanism 39 that exhausts the inside of the chamber 36 are provided. The stage 37 incorporates a coolant channel and a heater (both not shown), and the coolant channel and the heater mainly control the temperature of the wafer W during the COR process.

  The chamber 36 includes a chamber main body 40 and a lid portion 41, and the chamber main body 40 includes a substantially cylindrical side wall portion 40 a and a bottom portion 40 b, and an upper portion is opened and closed by the lid portion 41. A seal member (not shown) is disposed between the chamber body 40 and the lid portion 41 to ensure the airtightness of the chamber 36. On the PHT processing device 13 side of the chamber 36, a loading / unloading port 36 a for loading / unloading the wafer W to / from the PHT processing device 13 is provided, and the loading / unloading port 36 a is opened and closed by the gate valve 28.

  The processing gas supply mechanism 38 includes a first gas supply pipe 43 and a second gas supply pipe 44, and a hydrogen fluoride gas supply source 45 and an ammonia gas supply source connected to the gas supply pipes 43 and 44, respectively. 46. The first gas supply pipe 43 communicates with the inside of the chamber 36 via a first gas introduction nozzle 47 that penetrates the lid 41, and the second gas supply pipe 44 is a second gas that penetrates the lid 41. It communicates with the interior of the chamber 36 via the introduction nozzle 48. A third gas supply pipe 49 branches from the first gas supply pipe 43, and the third gas supply pipe 49 is connected to an argon (Ar) gas supply source 50, and the second gas supply pipe 44 connects to the second gas supply pipe 44. The fourth gas supply pipe 51 branches and the fourth gas supply pipe 51 is connected to a nitrogen gas supply source 52. The first gas supply pipe 43 to the fourth gas supply pipe 51 are provided with a flow rate controller 53 that opens and closes each supply pipe and controls the flow rate of the gas flowing through each supply pipe. And a mass flow controller 33. The processing gas supply mechanism 38 introduces a processing gas containing hydrogen fluoride gas, argon gas, ammonia gas, and nitrogen gas into the chamber 36. Since the hydrogen fluoride gas and ammonia gas react with each other, these gases are The first gas introduction nozzle 47 and the second gas introduction nozzle 48 are respectively introduced into the chamber 36 so as to be mixed for the first time in the chamber 36. A shower head may be provided instead of the first gas introduction nozzle 47 and the second gas introduction nozzle 48, and the processing gas may be introduced through the shower head.

In the COR processing apparatus 14, the inside of the chamber 36 is depressurized to a predetermined degree of vacuum, and an oxide film, for example, a silicon oxide (SiO ₂ ) film formed on the surface of the wafer W is reacted with hydrogen fluoride gas and ammonia gas. Then, ammonium fluorosilicate (AFS) as a reaction product is generated from the oxide film (COR treatment). As described above, the reaction product is sublimated in the PHT processing apparatus 13. That is, in the substrate processing system 10, the oxide film on the wafer W is removed by the generation of the reaction product in the COR processing apparatus 14 and the sublimation of the reaction product in the PHT processing apparatus 13. Argon gas and nitrogen gas in the processing gas function as a dilution gas, but the dilution gas is not limited to these gases, and other inert gases may be used.

  The exhaust mechanism 39 includes an exhaust pipe 55 that communicates with an exhaust port 54 that opens to the bottom 40 b, a vacuum pump 56 connected to the exhaust pipe 55, and a pressure control valve (APC) 57 that controls the pressure inside the chamber 36. And have.

  Two capacitance manometers 58 a and 58 b for measuring the pressure inside the chamber 36 are provided on the side wall 40 a of the chamber body 40. The two capacitance manometers 58a and 58b are manometers for high pressure measurement and low pressure measurement, respectively. The lid 41 has a ceiling 41a facing the stage 37 and a side wall 41b that contacts the side wall 40a of the chamber body 40, and a heater 59 is embedded in each of the ceiling 41a and the side wall 41b. The heater 59 heats the ceiling portion 41a and the side wall portion 41b to prevent deposits from adhering to the ceiling portion 41a and the side wall portion 41b.

  The film thickness of the oxide film formed on the surface of the wafer W is affected by the distribution of the film forming gas in the oxide film forming apparatus and the temperature distribution of the wafer W, but the film forming gas is difficult to distribute uniformly. Since it is difficult to uniformly control the temperature of the wafer W, the thickness distribution form of the oxide film is not uniform. Here, in order to remove an excess oxide film through the COR process and the PHT process and leave an oxide film having a uniform film thickness on the surface of the wafer W, the amount of the oxide film to be removed at various locations on the surface of the wafer W is set. Need to change. As described above, since the generation rate and generation amount of the reaction product in the COR processing depend on the temperature of the wafer W, it is removed at various locations on the surface of the wafer W by partially changing the temperature of the wafer W. It is necessary to change the amount of the oxide film.

  By the way, as described above, the temperature of the wafer W is mainly controlled by the refrigerant flow path and the heater built in the stage 37. However, the heater 59 embedded in the ceiling 41a and the side wall 41b is embedded in the wafer W. Radiant heat from the heat input. Since the heaters 59 may not be arranged evenly or symmetrically with respect to the wafer W, the radiant heat from the heaters 59 does not enter the wafer W evenly. That is, it is difficult to realize a desired temperature distribution in the wafer W. In the present embodiment, the temperature of the wafer W is partially changed by partially changing the amount of heat flow flowing from the wafer W to which the radiant heat from the heater 59 is input unevenly to the stage 37. Change.

  FIG. 4 is a diagram showing a pattern disk as a temperature control plate according to the present embodiment, FIG. 4 (A) shows a pattern disk having a first thermal emissivity change region, and FIG. FIG. 4C shows a pattern disk having a second thermal emissivity changing area, and FIG. 4C shows a pattern disk having a third thermal emissivity changing area.

  4A to 4C, each of the pattern disks 60 to 62 is made of aluminum or silicon having a disk shape with a diameter substantially the same as that of the wafer W, and the surface thereof is partially hard anodized (see FIG. 4). (Indicated by hatching in the inside.) The area where the hard anodizing treatment is applied and the area where the hard anodizing treatment is not applied have different thermal emissivity, whereas the area where the hard anodizing treatment is applied has a thermal emissivity ε of about 0.8. The thermal emissivity ε of the region not subjected to the hard alumite treatment is about 0.02. The areas of the pattern discs 60 to 62 that have been subjected to the hard alumite treatment (hereinafter referred to as “thermal emissivity changing area”) are different from each other, and the first thermal emissivity changing area 60a and the second thermal emissivity are respectively different. A change area 61a and a third thermal emissivity change area 62a are provided. Each of the pattern disks 60 to 62 has pin holes 64 penetrating at a plurality of positions so as to correspond to the lift pins 63 of the wafer lift pin group described later. The weight of each of the pattern disks 60 to 62 is about 190 g.

  In the present embodiment, in the COR processing apparatus 14, any one of the pattern disks 60 to 62 is disposed between the wafer W and the stage 37. As described above, since the radiant heat from each heater 59 is input to the wafer W, a heat flow that flows from the wafer W toward the stage 37 is generated. Here, in the pattern disk 60, for example, disposed between the wafer W and the stage 37, the amount of heat transferred from the wafer W and radiated toward the stage 37 is different from that of the first thermal emissivity changing region 60a. It is different from other areas where the alumite treatment has not been performed (hereinafter referred to as “thermal emissivity unchanged area”). That is, as shown in FIG. 5, the amount of heat flow (indicated by arrows in the figure) that flows from the wafer W through the first thermal emissivity changing region 60a to the stage 37, and the thermal emissivity from the wafer W is not yet obtained. Since the amount of heat flow (shown by arrows in the drawing) that passes through the change region and flows to the stage 37 is different, the amount of heat that is removed from the portion of the wafer W that faces the first thermal emissivity change region 60a; The amount of heat removed from the portion facing the heat emissivity unchanged region is different, and as a result, the temperature of the wafer W can be partially changed. Specifically, the amount of heat flow that flows through the first thermal emissivity change region 60a that has been subjected to the hard anodized treatment is greater than the amount of heat flow that flows through the heat emissivity unchanged region that has not been subjected to the hard anodized treatment. Therefore, the amount of heat removed from the portion facing the first thermal emissivity changing region 60a in the wafer W increases, and the temperature of the portion of the wafer W facing the first thermal emissivity changing region 60a becomes the temperature of the wafer W. It becomes lower than the temperature of the part which opposes the thermal emissivity unchanged area in

  In the present embodiment, the pattern disk 61 and the pattern disk 62 are disposed between the wafer W and the stage 37 instead of the pattern disk 60, thereby changing the first thermal emissivity of the pattern disk 60 on the wafer W. The portion where the region 60a removes heat and the portion where the second heat emissivity changing region 61a of the pattern disk 61 and the third heat emissivity changing region 62a of the pattern disc 62 remove heat can be changed. . That is, the temperature distribution in the wafer W can be changed by replacing the pattern disk 60 disposed between the wafer W and the stage 37 with the pattern disk 61 or the pattern disk 62.

  6A and 6B are diagrams for explaining a method of placing the pattern disk and the wafer on the stage. FIG. 6A shows the method of placing the pattern disk on the stage, and FIG. The placement method on the stage is shown.

  In the present embodiment, a plurality of pattern disks (for example, pattern disks 60 to 62) are stored in one carrier C. Further, each of the pattern disks 60 to 62 has a disk shape substantially the same diameter as the wafer W and has a light weight of 190 g. Therefore, the pattern disks 60 to 62 are transported by the first wafer transport mechanism 15 and the second wafer transport mechanism 20. Can do. Accordingly, each of the pattern disks 60 to 62 is moved from the carrier C to the loader chamber 16, the load lock chamber 12, and the PHT processing apparatus 13 by the first wafer transfer mechanism 15 and the second wafer transfer mechanism 20 in the same manner as the wafer W. To the COR processing unit 14. The stage 37 can freely protrude from the surface. When the wafer W, the pattern disk 60, etc. are placed on the stage 37, a plurality of lift pins, for example, six lift pins 63, for supporting the wafer W, the pattern disk 60, etc. are provided. Have These lift pins 63 are classified into a wafer lift pin group (first group) for supporting the wafer W and a pattern disk lift pin group (second group) for supporting the pattern disk 60 and the like.

  In FIG. 6, first, the second wafer conveyance mechanism 20 carries, for example, the pattern disk 60 into the chamber 36 and conveys the pattern disk 60 to a position directly above the stage 37. At this time, each lift pin 63 of the pattern disk lift pin group protrudes from the surface of the stage 37 to support the pattern disk 60, whereby the pattern disk 60 is received from the second wafer transport mechanism 20. Thereafter, each lift pin 63 is accommodated in the stage 37, whereby the pattern disk 60 is lowered and placed on the stage 37.

  Next, the second wafer transfer mechanism 20 loads the wafer W into the chamber 36 and transfers the wafer W to the position just above the stage 37. At this time, since the pattern disk 60 placed on the stage 37 has a plurality of pin holes 64 penetrating so as to correspond to the lift pins 63 of the wafer lift pin group, each lift pin 63 of the wafer lift pin group has each pin hole. 64 and can protrude from the surface of the stage 37. Accordingly, in the COR processing apparatus 14, the wafer W can be supported by the lift pins 63 of the wafer lift pin group while the pattern disk 60 is placed on the stage 37. Thereafter, each lift pin 63 receives the wafer W from the second wafer transfer mechanism 20, and further, each lift pin 63 is accommodated in the stage 37, whereby the wafer W is lowered and placed on the stage 37. In the COR processing apparatus 14, the wafer W, the pattern disk 60, and the like are not attracted to the stage 37, but are merely placed by their own weight.

  Next, COR processing as a substrate processing method according to the present embodiment will be described.

  FIG. 7 is a flowchart showing a procedure of COR processing as the substrate processing method according to the present embodiment. This process is executed for each wafer W subjected to the COR process.

  In FIG. 7, first, the film thickness distribution form of the oxide film on the wafer W to be subjected to the COR process, the processing conditions of the film forming process performed on the wafer W, and the film forming process performed on the wafer W are processed. It is specified from the specification of the device (step S71).

  Next, the temperature distribution of the wafer W necessary for processing the oxide film having the specified film thickness distribution form into an oxide film having a uniform film thickness by COR processing can be determined, and the temperature distribution can be realized. A pattern disk is selected from, for example, pattern disks 60 to 62 (step S72).

  Next, the selected pattern disk is transported from the carrier C accommodating the pattern disks 60 to 62 to the COR processing device 14 and placed on the stage 37 (step S73). Thereafter, the wafer W is transferred from the carrier C to the COR processing apparatus 14 and placed on the stage 37 (step S74).

  Next, the inside of the chamber 36 is exhausted by the exhaust mechanism 39 to reduce the internal pressure to a predetermined degree of vacuum (step S75), and the processing gas is introduced into the chamber 36 by the processing gas supply mechanism 38 (step S76). ), The temperature of the wafer W is controlled by the stage 37. Radiant heat is also input to the wafer W from each heater 59. As a result, the temperature of the wafer W becomes higher than the temperature of the stage 37, and the heat flow is changed from the wafer W to the stage 37. To flow. At this time, in the wafer W, an oxide film, hydrogen fluoride gas, and ammonia gas react to generate a reaction product. However, although radiant heat is input from the heaters 59 to the wafer W unevenly, By partially controlling the amount of heat flow flowing from the wafer W to the stage 37 with the pattern disk, the temperature distribution of the wafer W necessary for processing into an oxide film with a uniform thickness is realized. As a result, the oxide film is changed into a reaction product by an amount necessary for realizing an oxide film having a uniform film thickness at various locations on the wafer W (step S77). Next, after the production of the reaction product is self-stopped, the present process is terminated.

  According to the present embodiment, each of the pattern disks 60 to 62 disposed between the wafer W and the stage 37 is made of a single disk-shaped member, and has a heat emissivity changing region and a heat emissivity unchanging region, that is, Since the heat emissivity is partially different, the amount of heat flow from the wafer W passing through the pattern disks 60 to 62 is partially changed without forming the pattern disks 60 to 62 with a plurality of members. be able to. That is, since the temperature of the wafer W can be partially changed without making the handling of the pattern disks 60 to 62 difficult, it is possible to prevent the throughput of the COR processing from being lowered, and the wafer W. Partial temperature control can be performed.

  In addition, according to the present embodiment, a plurality of pattern disks 60 to 62 having different thermal emissivity changing regions 60 a to 62 a are prepared, and each wafer W corresponds to the thickness distribution form of the oxide film on the wafer W. Since the pattern disk is selected, the temperature distribution of the wafer W necessary for processing into an oxide film having a uniform film thickness can be realized for each wafer W, and the oxidation after the processing of each wafer W can be realized. It is possible to prevent the film thickness distribution form from varying.

  According to the present embodiment, since the radiant heat is input to the wafer W from each heater 59, the heat flow flows from the wafer W to the stage 37. Thereby, the amount of heat flow that the pattern disk flows from the wafer W to the stage 37 can be controlled.

  Further, according to the present embodiment, when the radiant heat is input from the heaters 59 to the wafer W, the interior of the chamber 36 is exhausted, so that no heat flow from the wafer W to the stage 37 occurs through the gas. . As a result, only the selected pattern disk can control the amount of heat flow flowing from the wafer W to the stage 37, so that the temperature distribution of the wafer W necessary for processing into an oxide film having a uniform thickness can be obtained. It can be realized reliably.

  Furthermore, according to the present embodiment, the pattern disk has a disk shape having the same diameter as that of the wafer W, and therefore can be transported without any trouble by the first wafer transport mechanism 15 and the second wafer transport mechanism 20. It can be easily placed on the stage 37. That is, since the pattern disk can be exchanged by the first wafer conveyance mechanism 15 or the second wafer conveyance mechanism 20, it is not necessary for the operator to exchange the pattern disk manually, thereby reducing the work time. Thus, the throughput of the COR processing can be further improved.

  Further, according to the present embodiment, when the pattern disk is placed on the stage 37, each lift pin 63 of the wafer lift pin group is inserted into the plurality of pin holes 64 penetrating the pattern disk. The wafer W can be supported by protruding from the stage 37 while being placed on the stage 37. As a result, the wafer W can be exchanged smoothly, and the throughput of the COR processing can be further improved.

  In the present embodiment, each of the pattern disks 60 to 62 has two regions having different heat emissivities (the heat emissivity change region and the heat emissivity non-change region). May have three or more different regions. Further, in the present embodiment, the thermal emissivity change region is formed by performing the hard alumite process on the wafer W, but the thermal emissivity change region is formed by performing the process of changing another thermal emissivity on the wafer W. It may be formed.

  During the COR process, since the pattern disk is placed on the stage 37 and covers the surface of the stage 37, it is possible to suppress deposition of deposits on the surface of the stage 37.

  Next, a second embodiment of the present invention will be described.

  This embodiment is different from the first embodiment only in the form of the pattern disk, and other configurations and operations are basically the same as those in the first embodiment. Will be omitted, and only different configurations and operations will be described below.

  FIG. 8 is a diagram showing a pattern disk as a temperature control plate according to the present embodiment, FIG. 8 (A) shows a pattern disk having a first heat transmittance change region, and FIG. FIG. 8C shows a pattern disk having a second heat transmittance change region, and FIG. 8C shows a pattern disk having a third heat transmittance change region.

  8A to 8C, each of the pattern disks 65 to 67 is made of aluminum or silicon having a disk shape having substantially the same diameter as the wafer W, and is partially different in thickness. Specifically, it has a thinned region (indicated by hatching in the figure). The thinned region and the non-thinned region have different heat transmittances in the region. The thinned areas (hereinafter referred to as “heat transmittance changing areas”) of the pattern disks 65 to 67 are different from each other, and the first heat transmittance changing area 65a and the second heat transmittance changing area 66a, respectively. And a third heat transmittance change region 67a. Each of the pattern disks 65 to 67 also has pin holes 68 penetrating at a plurality of positions so as to correspond to the lift pins 63 of the later-described wafer lift pin group, similarly to the pattern disk 60 and the like. The weight of each of the pattern disks 65 to 67 is about 190 g.

  In the present embodiment, in the COR processing device 14, any one of the pattern disks 65 to 67 is disposed between the wafer W and the stage 37. For example, in the pattern disk 65 disposed between the wafer W and the stage 37, the amount of heat that passes through the pattern disk 65 from the wafer W toward the stage 37 is different from the first heat transmittance change area 65 a and other areas ( Hereinafter, it is referred to as “thermal transmittance unchanged region”). That is, as shown in FIG. 9, the amount of heat flow (indicated by an arrow in the figure) that flows from the wafer W through the first heat transmittance changing region 65a to the stage 37, and the heat transmittance from the wafer W is not yet transmitted. Since the amount of heat flow (shown by arrows in the figure) that passes through the change region and flows to the stage 37 is different, the amount of heat removed from the portion of the wafer W that faces the first heat transmittance change region 65a; The amount of heat removed from the portion facing the heat transmittance unchanged region is different, and as a result, the temperature of the wafer W can be partially changed. Specifically, the amount of heat flow flowing through the thinned first heat transmittance change region 65a is larger than the amount of heat flow flowing through the non-thinned heat emissivity unchanged region. The amount of heat removed from the portion facing the first heat transmittance changing region 65a is increased, and the temperature of the portion of the wafer W facing the first heat transmittance changing region 65a is not changed. It becomes lower than the temperature of the part facing the region.

  Further, in the present embodiment, the pattern disk 65 and the pattern disk 67 are arranged between the wafer W and the stage 37 instead of the pattern disk 65, so that the first heat transmittance of the pattern disk 65 is changed on the wafer W. A portion where the region 65a removes heat and a portion where the second heat transmittance changing region 66a of the pattern disk 66 and the third heat transmittance changing region 67a of the pattern disc 67 remove heat can be changed. . That is, the temperature distribution in the wafer W can be changed by replacing the pattern disk 65 disposed between the wafer W and the stage 37 with the pattern disk 66 or the pattern disk 67.

  In the present embodiment, when the process of FIG. 7 is executed, the carrier C that accommodates the pattern disks 65 to 67 is placed on the carrier placing table 17, and the necessary temperature distribution of the wafer W can be realized. A pattern disk is selected from pattern disks 65-67.

  According to the present embodiment, each of the pattern disks 65 to 67 arranged between the wafer W and the stage 37 is composed of one disk-shaped member, and is a thinned region and a non-thinned region, that is, Since the heat transmittance is partially different, the amount of heat flow from the wafer W that passes through each pattern disk 65 to 67 is partially changed without forming each pattern disk 65 to 67 with a plurality of members. be able to. That is, since the temperature of the wafer W can be partially changed without making it difficult to handle each of the pattern disks 65 to 67, it is possible to prevent the throughput of the COR processing from being lowered and the wafer W. Partial temperature control can be performed.

  In addition, according to the present embodiment, a plurality of pattern disks 65 to 67 having different heat transmittance changing regions 65a to 67a are prepared, and each wafer W corresponds to the thickness distribution form of the oxide film on the wafer W. Since the pattern disk is selected, the temperature distribution of the wafer W necessary for processing into an oxide film having a uniform film thickness can be realized for each wafer W, and the oxidation after the processing of each wafer W can be realized. It is possible to prevent the film thickness distribution form from varying.

  In the present embodiment, by thinning a part of each of the pattern disks 65 to 67, the heat transmittance of the thinned area is different from that of the non-thinned area. In step 67, the pattern disks 65 to 67 have partially different heat transmissivities so that the heat transmissivities of the areas that are not flesh and the areas that are not flesh are different. May be.

  In the present embodiment, each of the pattern disks 65 to 67 has two regions having different thicknesses (the heat transmittance changing region and the heat transmittance unchanged region), but each of the pattern disks 65 to 67 has a different thickness. You may have more than two regions.

  As described above, the present invention has been described using the above embodiments, but the present invention is not limited to the above embodiments.

  For example, in each of the above embodiments, the heat flow flows from the wafer W to the stage 37, but the heater of the stage 37 may positively heat the wafer W so that the heat flow may flow from the stage 37 to the wafer W. In this case, the heat flow flows from the stage 37 to the wafer W via the pattern disk. As a result, the amount of heat flow that the pattern disk partially flows from the stage 37 to the wafer W can be controlled, and the temperature distribution of the wafer W necessary for processing into an oxide film having a uniform thickness can be realized. Can do.

  Each of the pattern disks 60 to 62 and 65 to 67 has a disk shape having a diameter substantially the same as that of the wafer W. For example, the shape may be different from that of the wafer W.

  Further, in the process of FIG. 7 described above, the pattern disk is selected for each wafer W. However, if the film thickness distribution forms of the oxide films of the plurality of wafers W subjected to the film formation process of the same lot are substantially the same. A pattern disk may be selected for each lot. Thereby, the time required for selecting and transporting the pattern disk can be reduced, and the throughput can be further improved.

  Further, the PHT processing apparatus 13 and the COR processing apparatus 14 in the substrate processing system 10 perform PHT processing and COR processing for each wafer W, but a plurality of stages 26 and stages 37, for example, two wafers W are processed. The PHT processing device 13 and the COR processing device 14 may execute the PHT processing and the COR processing for each of the two wafers W by configuring the mounting.

  In addition, an object of the present invention is to supply a storage medium storing software program codes for realizing the functions of the above-described embodiments to the control unit 21 of the substrate processing system 10. It is also achieved by reading and executing the program code stored in the storage medium.

  In this case, the program code itself read from the storage medium realizes the functions of the above-described embodiments, and the program code and the storage medium storing the program code constitute the present invention.

  Examples of the storage medium for supplying the program code include RAM, NV-RAM, floppy (registered trademark) disk, hard disk, magneto-optical disk, CD-ROM, CD-R, CD-RW, DVD (DVD). -ROM, DVD-RAM, DVD-RW, DVD + RW) and other optical disks, magnetic tapes, non-volatile memory cards, other ROMs, etc., as long as they can store the program code. Alternatively, the program code may be supplied to the control unit 21 by downloading from another computer or database (not shown) connected to the Internet, a commercial network, a local area network, or the like.

  Further, by executing the program code read out by the control unit 21, not only the functions of the above-described embodiments are realized, but also the OS (running on the process controller 22) based on the instruction of the program code. The operating system) performs part or all of the actual processing, and the functions of the above-described embodiments are realized by the processing.

  Furthermore, after the program code read from the storage medium is written in the memory provided in the function expansion board inserted in the control unit 21 or the function expansion unit connected to the control unit 21, the program code is read based on the instruction of the program code. The CPU of the function expansion board or function expansion unit performs part or all of the actual processing, and the functions of the above-described embodiments are realized by the processing.

  The form of the program code may include an object code, a program code executed by an interpreter, script data supplied to the OS, and the like.

  Next, examples of the present invention will be described.

  First, as shown in FIG. 10, a fan-shaped thermal emissivity changing region 69a (shown by hatching in the figure) formed by applying hard anodizing to the surface, and thermal radiation not having been applied with hard anodizing. A pattern disk 69 having a rate unchanged area 69b was prepared. Further, in the heating apparatus simulating the COR processing apparatus 14, when the wafer W is placed on the stage 37, the pattern disk 69 is disposed between the wafer W and the stage 37.

  Thereafter, in the heating device, the temperature of each heater 59 is set to 85 ° C., the temperature of the stage 37 is set to any of 35 ° C., 55 ° C., and 80 ° C., and the pressure (vacuum degree) inside the chamber 36 is further increased. The exhaust mechanism 39 was set to any one of 2000 mTorr, 500 mTorr, 100 mTorr, 20 mTorr, and 0 mTorr.

  Thereafter, the temperature of the wafer W was measured at various combinations of the temperature of each stage 37 and the degree of vacuum inside each chamber 36. The measurement points of the temperature of the wafer W were set so as to correspond to 10 points (indicated by “1” to “10” in the figure) shown on the pattern disk 69 of FIG.

  FIG. 11 is a graph showing the temperature of each measurement location on the wafer W when the temperature of the stage 37 is set to 35 ° C., and FIG. 11A shows the case where the pressure inside the chamber 36 is set to 2000 mTorr. 11B shows a case where the pressure inside the chamber 36 is set to 500 mTorr, FIG. 11C shows a case where the pressure inside the chamber 36 is set to 100 mTorr, and FIG. FIG. 11E shows a case where the pressure inside the chamber 36 is set to 20 mTorr, and FIG. 11E shows a case where the pressure inside the chamber 36 is set to 0 mTorr. FIG. 12 is a graph showing the temperature at each measurement location on the wafer W when the temperature of the stage 37 is set to 55 ° C., and FIG. 12A shows the case where the pressure inside the chamber 36 is set to 2000 mTorr. 12B shows the case where the pressure inside the chamber 36 is set to 500 mTorr, FIG. 12C shows the case where the pressure inside the chamber 36 is set to 100 mTorr, and FIG. FIG. 12E shows the case where the pressure inside the chamber 36 is set to 20 mTorr, and FIG. 12E shows the case where the pressure inside the chamber 36 is set to 0 mTorr. FIG. 13 is a graph showing the temperature at each measurement location on the wafer W when the temperature of the stage 37 is set to 80 ° C., and FIG. 13A shows the case where the pressure inside the chamber 36 is set to 2000 mTorr. 13B shows a case where the pressure inside the chamber 36 is set to 500 mTorr, FIG. 13C shows a case where the pressure inside the chamber 36 is set to 100 mTorr, and FIG. FIG. 13E shows the case where the pressure inside the chamber 36 is set to 20 mTorr, and FIG. 13E shows the case where the pressure inside the chamber 36 is set to 0 mTorr. The hatched portion in each graph corresponds to the thermal emissivity change region 69a.

  In any case, since the temperature of each heater 59 is higher than the temperature of the stage 37, the heat flow flows from the wafer W to which the radiant heat from each heater 59 is input to the stage 37. When the pressure inside the chamber 36 was set to 2000 mTorr, the temperature at each measurement location varied. Therefore, when the pressure inside the chamber 36 was set to 2000 mTorr, the temperature at each measurement location was uniform. The measurement results were corrected so that each graph shows the temperature in consideration of the correction allowance used in this correction.

  As shown in the graphs of FIGS. 11A to 13E, the temperature of the portion of the wafer W that faces the thermal emissivity change region 69a is higher than the temperature of the portion of the wafer W that faces the heat emissivity unchanged region 69b. It was confirmed to be lower. As a result, it was found that the partial temperature control of the wafer W can be performed using the pattern disk 69.

  Further, the lower the pressure inside the chamber 36, the larger the difference between the temperature of the portion of the wafer W that faces the heat emissivity changing region 69a and the temperature of the portion of the wafer W that faces the heat emissivity unchanged region 69b. I understood. Thus, it was found that the influence of the pattern disk 69 on the amount of heat flowing from the wafer W to the stage 37 increases as the inside of the chamber 36 is exhausted and the heat flow through the gas from the wafer W to the stage 37 decreases. That is, it has been found that in order to realize the necessary temperature distribution of the wafer W by the pattern disk 69, the lower the pressure inside the chamber 36, the better.

W wafer 10 substrate processing system 14 COR processing apparatus 15 first wafer transfer mechanism 20 second wafer transfer mechanism 36 chamber 37 stage 59 heaters 60 to 62, 65 to 67, 69 pattern disk 60a first thermal emissivity change region 61a Second heat emissivity change region 62a Third heat emissivity change region 63 Lift pins 64, 68 Pin hole 65a First heat transmittance change region 66a Second heat transmittance change region 67a Third heat transmittance Change area 69a Thermal emissivity change area 69b Thermal emissivity unchanged area

Claims (16)

In a substrate processing apparatus including a mounting table for mounting a substrate,
It is composed of a single plate-like member, and includes a temperature control plate disposed between the substrate and the mounting table.
The substrate processing apparatus, wherein the temperature control plate has partially different thermal emissivity. A transport mechanism for transporting the substrate and placing it on the mounting table;
The substrate processing apparatus according to claim 1, wherein the temperature control plate has a shape that can be transported by the transport mechanism.   The substrate processing apparatus according to claim 2, wherein each of the substrate and the temperature control plate has a disk shape. A plurality of temperature control plates having different thermal emissivity distribution forms,
4. The substrate processing apparatus according to claim 2, wherein the transport mechanism transports the temperature control plate corresponding to the substrate among the plurality of temperature control plates and places the temperature control plate on the mounting table.   5. The substrate processing apparatus according to claim 1, wherein the temperature control plate is made of aluminum or silicon, and the surface thereof is partially hard-anodized. The mounting table has a plurality of pins that can protrude from the mounting table,
The plurality of pins are classified into a first group that supports the substrate and a second group that supports the temperature control plate,
The temperature control plate has a plurality of pin holes penetrating the temperature control plate,
6. The plurality of pins constituting the first group are inserted into the plurality of pin holes when the temperature control plate is placed on the mounting table. The substrate processing apparatus according to claim 1. In a substrate processing apparatus including a mounting table for mounting a substrate,
It is composed of a single plate-like member, and includes a temperature control plate disposed between the substrate and the mounting table.
The substrate processing apparatus, wherein the temperature control plate has partially different thicknesses.   A temperature control board, which is disposed between a substrate and a mounting table on which the substrate is mounted and has a partially different heat emissivity.   The said temperature control board exhibits the shape which can be conveyed with the conveyance mechanism which conveys the said board | substrate and mounts it on the mounting table mentioned above, The temperature control board of Claim 8 characterized by the above-mentioned.   The said temperature control board exhibits disk shape, The temperature control board of Claim 8 or 9 characterized by the above-mentioned.   The temperature control board according to any one of claims 8 to 10, wherein the temperature control board is made of aluminum or silicon and is partially hard-anodized on the surface.   A temperature control plate, which is disposed between a substrate and a mounting table on which the substrate is mounted and has a partially different thickness. A substrate processing method using a mounting table for mounting a substrate,
Preparing a plurality of temperature control plates arranged between the substrate and the mounting table and having partially different thermal emissivity,
The substrate processing method characterized by selecting the temperature control plate disposed between the substrate and the mounting table according to the substrate. The substrate and the mounting table are arranged in a processing chamber,
The substrate processing method according to claim 13, wherein when the heat is radiated from other than the mounting table to the substrate, the processing chamber is exhausted.   15. The substrate processing method according to claim 13, wherein the temperature control plate is selected for each substrate. A substrate processing method using a mounting table for mounting a substrate,
Preparing a plurality of temperature control plates arranged between the substrate and the mounting table and having partially different thicknesses;
The substrate processing method characterized by selecting the temperature control plate disposed between the substrate and the mounting table according to the substrate.