JP2016162790A - High frequency semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor device module capable of improving the thermal insulation property.SOLUTION: A high-frequency semiconductor module according to an embodiment comprises: a cooling body; a high-frequency semiconductor device arranged on the cooling body; and a thermal insulation container that accommodates the cooling body and the high-frequency semiconductor device therein and that has an opening at a portion thereof. The high-frequency semiconductor device comprises: a base plate arranged on the cooling body; a signal processing circuit provided on the base plate, and that performs desired signal processing to a high-frequency signal; an internal circuit provided on the base plate so as to be electrically connected with the signal processing circuit; an electromagnetic coupling circuit fixed to an inner surface of the thermal insulation container so as to seal the opening of the thermal insulation container, and electrically connected with the internal circuit by electromagnetic coupling; a height adjustment circuit arranged on the electromagnetic coupling circuit in the opening of the thermal insulation container so as to be electrically connected with this circuit; and an external circuit arranged on an outer peripheral surface of the thermal insulation container, and electrically connected with the height adjustment circuit.SELECTED DRAWING: Figure 10

Description

  Embodiments described herein relate generally to a high-frequency semiconductor module.

  For example, a low-noise amplification element that amplifies a received high-frequency signal is used in a receiving device or the like used for wireless communication. It is generally known that the NF (Noise Figure) characteristics of a low noise amplifying element are improved as the operating temperature is lowered.

  One means for operating the low noise amplifying element at a low temperature is to arrange the low noise amplifying element on a low temperature cooling body and to cover the low noise amplifying element arranged on the cooling body with a heat insulating container. . The low noise amplification element is cooled by the cooling body. Furthermore, since the low noise amplification element arranged on the cooling body is covered with the heat insulating container, the inflow of heat from the outside is suppressed, and the low temperature state can be efficiently maintained.

  As a high-frequency semiconductor module having such a structure, it is known to use an electromagnetic coupling unit for input / output of a high-frequency signal to / from a low-noise amplification element. The electromagnetic coupling part can make the outside and the inside of the heat insulating container non-contact while maintaining an electrical connection between the outside and the inside of the heat insulating container. Therefore, inflow of heat from the outside to the inside of the heat insulating container is suppressed, and the cooling effect of the low noise amplifying element by the cooling body can be enhanced.

  In recent years, it has been desired to further improve the heat insulation in this type of high-frequency semiconductor module.

JP 2014-17598 A

  An object of the embodiment is to provide a high-frequency semiconductor module capable of improving heat insulation.

  A high-frequency semiconductor module according to an embodiment includes a cooling body, a high-frequency semiconductor device disposed on the cooling body, a heat insulating container that accommodates the cooling body and the high-frequency semiconductor device inside, and has an opening in a part thereof. Are provided. The high-frequency semiconductor device includes a base plate disposed on the cooling body, a signal processing circuit that is provided on the base plate and performs desired signal processing on a high-frequency signal, and the signal on the base plate An internal circuit provided so as to be electrically connected to the processing circuit, and fixed to the inner surface of the heat insulating container so as to seal the opening of the heat insulating container, and electrically connected to the internal circuit by electromagnetic coupling On the electromagnetic coupling circuit to be connected, on the electromagnetic coupling circuit in the opening of the heat insulation container, on the height adjustment circuit arranged to be electrically connected to the circuit, on the outer peripheral surface of the heat insulation container And an external circuit electrically connected to the height adjustment circuit.

It is a disassembled perspective view which shows the cooling body and high frequency semiconductor device of the high frequency semiconductor module which concern on embodiment. It is a perspective view which expands and shows the 1st electromagnetic coupling circuit of a high frequency semiconductor device. It is a perspective view at the time of seeing the 1st height adjustment circuit applied to the high frequency semiconductor module concerning an embodiment from the slanting upper part. It is a perspective view at the time of seeing the 1st height adjustment circuit applied to the high frequency semiconductor module concerning an embodiment from the slanting lower part. It is a disassembled perspective view which shows the 1st height adjustment circuit and 1st electromagnetic coupling circuit which are shown to FIG. 3A and FIG. 3B. FIG. 5 is a partial cross-sectional view of the first height adjustment circuit and the first electromagnetic coupling circuit taken along one-dot chain line XX ′ in FIG. 4. It is a perspective view which shows the cooling body and high frequency semiconductor device of the high frequency semiconductor module which concern on embodiment. 1 is a cross-sectional view of a high-frequency semiconductor module according to an embodiment. It is a perspective view which shows a part of heat insulation container of the high frequency semiconductor module which concerns on embodiment. It is a perspective view which shows the principal part of the high frequency semiconductor module which concerns on embodiment. It is a fragmentary sectional view which expands and shows the 1st electromagnetic coupling circuit applied to the high frequency semiconductor module which concerns on embodiment, and its periphery. It is a fragmentary sectional view corresponding to Drawing 10 of a high frequency semiconductor module concerning a comparative example.

  The high-frequency semiconductor module according to the present embodiment includes a cooling body, a high-frequency semiconductor device disposed on the cooling body, and a heat insulating container that houses the cooling body and the high-frequency semiconductor device. The high frequency semiconductor device is cooled to a low temperature by a cooling body. And since the cooling body and the high frequency semiconductor device are covered with the heat insulation container, inflow of the heat from the outside is suppressed and the low temperature state can be efficiently maintained. Therefore, the high-frequency semiconductor device can operate at a low temperature and can improve NF (Noise Figure) characteristics. Hereinafter, a high-frequency semiconductor module according to such an embodiment will be described with reference to the drawings.

  FIG. 1 is an exploded perspective view showing a high-frequency semiconductor module cooling body and a high-frequency semiconductor device according to the first embodiment. As shown in FIG. 1, the high-frequency semiconductor device 10 is disposed on the cooling body 11.

  In the high-frequency semiconductor device 10 disposed on the cooling body 11, a signal processing circuit 13 that performs signal processing on a high-frequency signal is disposed on the surface of a base plate 12 that is a carrier plate made of Cu, for example. Yes. The signal processing circuit 13 is provided on the insulating substrate 14, a plurality of high-frequency semiconductor elements 15 (hereinafter sometimes referred to as semiconductor elements) provided on the upper surface of the substrate 14, and the upper surface of the insulating substrate 14. A branch / matching circuit 16 and a synthesis / matching circuit 17 connected to the plurality of semiconductor elements 15.

The insulating substrate 14 is a substrate made of alumina (Al ₂ O ₃ ), for example. Each of the plurality of semiconductor elements 15 is, for example, a low noise amplification element. The branch / matching circuit 16 and the synthesis / matching circuit 17 each include a Lange coupler, a matching line, and the like.

  Although not shown, the signal processing circuit 13 is also provided with a capacitor element and the like.

  A portion for inputting a high frequency signal from the outside of the heat insulating container 18 (FIG. 7 and the like) to the signal processing circuit 13 and a portion for outputting a high frequency signal output from the signal processing circuit 13 to the outside of the heat insulating container 18; Are constituted by electromagnetic coupling portions 19 and 20, respectively. The electromagnetic coupling units 19 and 20 are electrically connected to the signal processing circuit 13. And the electromagnetic coupling parts 19 and 20 make the inside and the outside of the heat insulation container 18 non-contact at the same time to electrically connect the inside and the outside of the heat insulation container 18 by electromagnetic coupling. Below, the electromagnetic coupling parts 19 and 20 are explained in full detail.

  A first electromagnetic coupling unit 19, which is an electromagnetic coupling unit 19 on the input side for inputting a high frequency signal from the outside of the heat insulating container 18 (FIG. 7, etc.) to the signal processing circuit 13, is electrically connected to the signal processing circuit 13. The internal input circuit 21 is an internal circuit and the first electromagnetic coupling circuit 22 disposed above the internal input circuit 21.

  The internal input circuit 21 is, for example, a superconducting circuit, and on a substrate such as a superconducting substrate 23 (magnesium oxide (MgO) substrate), a YBCO thin film (not shown) and a gold (Au) thin film (not shown) serving as a protective layer. The substrate is provided with a W-shaped wiring 24 on the superconducting substrate 23 by dry etching the YBCO thin film and the gold thin film on the substrate). The internal input circuit 21 is disposed on the upper surface of the base plate 12 and is pressed against the base plate 12 by a fixture 25 such as a leaf spring provided on the base plate 12. Then, the signal processing circuit 13 is electrically connected to the branching / matching circuit 16 through a connection conductor 26 such as a wire.

  The first electromagnetic coupling circuit 22 is a circuit that is electrically connected to the internal input circuit 21 by electromagnetic coupling, and is a circuit that supplies a high-frequency signal to the wiring 24 of the internal input circuit 21 by electromagnetic coupling. The first electromagnetic coupling circuit 22 is disposed above the internal input circuit 21 so as to be separated from the internal input circuit 21. The first electromagnetic coupling circuit 22 is disposed, for example, at a position spaced about 1 mm above the internal input circuit 21. The first electromagnetic coupling circuit 22 is supported at a predetermined position by a heat insulating container 18 described later (FIGS. 7 and 10). The support structure of the first electromagnetic coupling circuit 22 will be described in detail later.

  FIG. 2 is an enlarged perspective view showing the first electromagnetic coupling circuit 22. As shown in FIG. 2, in the first electromagnetic coupling circuit 22, an I-shaped wiring 28a is provided on the upper surface of an insulating substrate 27 made of alumina or the like having a thickness of about 1 mm. On the upper surface of the insulating substrate 27, a lead-out wiring 28b connected to the I-shaped wiring 28a and a pad electrode 28c connected to the lead-out wiring 28b are provided. Further, a ground metal 29 is provided on the upper surface of the insulating substrate 27 so as to surround the periphery of the I-shaped wiring 28a, the lead-out wiring 28b, and the pad electrode 28c.

  On the other hand, as shown by a dotted line in FIG. 2, a ground metal 30 is provided on the entire lower surface of the insulating substrate 27, and a part of the ground metal 30 is removed in a U shape. A through hole 31 penetrating the substrate 27 is provided in the periphery of the insulating substrate 27, and the ground metal 29 on the upper surface of the insulating substrate 27 and the ground metal 30 on the lower surface are provided in the through hole 31. Are electrically connected by a conductor.

  In the first electromagnetic coupling circuit 22, when a high frequency signal is input to the I-shaped wiring 28 a provided on the upper surface of the insulating substrate 27, the high frequency signal is generated by the electromagnetic coupling. It is transmitted to the W-shaped wiring 24 of the internal input circuit 21 disposed below.

  Next, the second electromagnetic coupling unit 20, which is an output side electromagnetic coupling unit that outputs a high-frequency signal output from the signal processing circuit 13 to the outside of the heat insulating container 18 (FIG. 7, etc.), electrically connects the signal processing circuit 13. The internal output circuit 32 is an internal circuit connected to the internal output circuit 32, and the second electromagnetic coupling circuit 33 is disposed above the internal output circuit 32.

  For example, the internal output circuit 32 is formed on the surface of an insulating substrate 14 such as alumina extending from the signal processing circuit 13 by gold (Au) so as to extend from the synthesis / matching circuit 17 of the signal processing circuit 13. The wiring 34 is provided in a letter shape. The internal output circuit 32 is disposed on the upper surface of the base plate 12 together with the signal processing circuit 13, and is pressed against the base plate 12 together with the signal processing circuit 13 by a fixture 25 such as a leaf spring provided on the base plate 12. ing.

  The second electromagnetic coupling circuit 33 is a circuit electrically connected to the internal output circuit 32 by electromagnetic coupling, and is a circuit to which a high frequency signal is supplied from the wiring 34 of the internal output circuit 32 by electromagnetic coupling. The second electromagnetic coupling circuit 33 is disposed above the internal output circuit 32 so as to be separated from the internal output circuit 32. The second electromagnetic coupling circuit 33 is disposed, for example, at a position spaced about 1 mm above the internal output circuit 32. The specific configuration of the second electromagnetic coupling circuit 33 is the same as that of the first electromagnetic coupling circuit 22 shown in FIG. 2, and an I-shaped wiring 35a and a lead are formed on the upper surface of the insulating substrate. A wiring 35b and a pad electrode 35c are provided, and a ground metal 36 is provided so as to surround these. Similar to the first electromagnetic coupling circuit 22, the second electromagnetic coupling circuit 33 is supported at a predetermined position by a heat insulating container 18 described later (FIGS. 7 and 10). The support structure of the second electromagnetic coupling circuit 33 will be described in detail later.

  When a high-frequency signal is input to the W-shaped wiring 34 of the internal output circuit 32 arranged below the second electromagnetic coupling circuit 33, the high-frequency signal is converted into the second electromagnetic coupling by electromagnetic coupling. This is transmitted to the I-shaped wiring 35 a on the surface of the circuit 33.

  As described above, the first and second electromagnetic coupling portions 19 and 20 electrically connect the inside and the outside of the heat insulating container 18 by electromagnetic coupling. The first and second electromagnetic coupling portions 19 and 20 make the inside and outside of the heat insulating container 18 non-contact as described above, which will be described later.

  The first electromagnetic coupling circuit 22 of the first electromagnetic coupling unit 19 is electrically connected to an external input circuit 38 that is an external circuit having a first external signal line 37 that receives a high-frequency signal from the outside of the module. The second electromagnetic coupling circuit 33 of the second electromagnetic coupling unit 20 is electrically connected to an external output circuit 40 that is an external circuit having a second external signal line 39 for sending a high-frequency signal to the outside of the module. Is done. Each of the external input circuit 38 and the external output circuit 40 is a printed circuit board, and is configured by providing the first external signal line 37 or the second external signal line 39 on the upper surface of the insulating substrate 41. The external input circuit 38 and the external output circuit 40 are respectively disposed on the outer peripheral surface of the heat insulating container 18 described later (FIG. 7). Each of the external input circuit 38 and the external output circuit 40 is also provided with a grounding line 42 that is grounded.

  Note that the positions of the first electromagnetic coupling circuit 22 and the external input circuit 38 in the height direction are different. Although the reason for this will be described later, since the positions in the height direction are different from each other in this way, considering that the circuits 22 and 38 are connected by a first connection conductor such as a wire, the first The length of the connecting conductor is increased. As a result, the inductance (or resistance, radiation loss) in the first connection conductor is increased.

  In general, the wirings 28a and 28b and the pad electrode 28c of the first electromagnetic coupling circuit 22 are designed to have an impedance of 50Ω, and the first external signal line 37 of the external input circuit 38 is similarly 50Ω. It is designed to have an impedance of On the other hand, when the first connecting conductor that connects the pad electrode 28c and the first external signal line 37 is a wire, the impedance deviates from 50Ω. As a result, the pad electrode 28c and the first external signal line 37 Impedance mismatch occurs between the two. When the length of the first connection conductor is short, the impedance mismatch is small. However, when the length of the first connection conductor is increased as described above, the impedance mismatch due to the first connection conductor is increased. Reflection loss increases.

  As described above, if the positions of the first electromagnetic coupling circuit 22 and the external input circuit 38 in the height direction are different from each other, the above problem occurs and input loss increases.

  Therefore, on the upper surface of the first electromagnetic coupling circuit 22, a first height adjustment circuit 44 having a first connection wiring 43 that electrically connects the first electromagnetic coupling circuit 22 and the external input circuit 38. Is fixed by, for example, silver nanoparticles. By providing the first height adjustment circuit 44 on the first electromagnetic coupling circuit 22 so as to be electrically connected to the circuit 22, the first connection wiring 43 is connected to the first electromagnetic coupling circuit 22. The pad electrode 28c is electrically extracted to a height position where the external input circuit 38 is disposed. By designing the impedance of the first connection wiring 43 to, for example, 50Ω so as to match the pad electrode 28 c of the first electromagnetic coupling circuit 22 and the first external signal line 37 of the external input circuit 38, This connection wiring 43 can be aligned with the pad electrode 28 c and the first external signal line 37. Since the first connection wiring 43 and the first external signal line 37 of the external input circuit 38 exist at the same height position, the length of a first connection conductor 45 (to be described later) that electrically connects them. The inductance (or resistance, radiation loss) of the first connection conductor 45 can be reduced, and impedance mismatch between the first connection wiring 43 and the first external signal line 37 can be reduced. . As a result, the impedance is discontinuous in the wiring between the first electromagnetic coupling circuit 22 and the external input circuit 38 (the high-frequency signal line constituted by the first connection wiring 43 and the first connection conductor 45). This can be suppressed.

  FIG. 3A is a perspective view of a first height adjustment circuit applied to the high-frequency semiconductor module according to the embodiment as viewed obliquely from above. FIG. 3B is a perspective view of the first height adjustment circuit applied to the high-frequency semiconductor module according to the embodiment as viewed obliquely from below. As shown in FIG. 3A and FIG. 3B, the first height adjustment circuit 44 is connected to the first connection wiring 43 and the ground on the box-shaped first dielectric 60 composed of a cylindrical side wall and a top plate. The metal 51 is provided. The first dielectric 60 is made of, for example, ceramic, alumina, or the like, and the first connection wiring 43 and the ground metal 51 are each made of, for example, a metal thin film such as gold.

  A through hole 61 is provided on the side wall of the first dielectric 60 to penetrate the side wall and the top plate. And the inner wall of this through-hole 61 is metallized, and this functions as the wiring 43a. A part of the top surface of the top plate of the first dielectric 60 including the upper end of the through hole 61 is provided with a strip-like wiring 43b connected to the wiring 43a inside the through hole 61. An island-like wiring 43 c connected to the wiring 43 a inside the through hole 61 is provided on a part of the lower surface of the side wall of the first dielectric 60 including the lower end of 61. The first connection wiring 43 includes a wiring 43 a inside the through hole 61, a strip-shaped wiring 43 b on the top surface of the top plate of the first dielectric 60, and an island-shaped wiring on the bottom surface of the side wall of the first dielectric 60. 43c.

  On the other hand, the ground metal 51 is provided on the entire surface of the first dielectric 60 so as not to contact the first connection wiring 43.

  FIG. 4 is an exploded perspective view showing the first height adjustment circuit and the first electromagnetic coupling circuit. FIG. 5 is a partial cross-sectional view of the first height adjustment circuit and the first electromagnetic coupling circuit along the one-dot chain line XX ′ in FIG. 4. As shown in FIGS. 4 and 5, the first height adjusting circuit 44 includes an island-like wiring 43 c on the lower surface of the side wall of the first dielectric 60 and a pad electrode on the upper surface of the first electromagnetic coupling circuit 22. The ground metal 51 on the lower surface of the first dielectric 60 is connected to the ground metal 29 on the upper surface of the first electromagnetic coupling circuit 22, for example, silver nanoparticles. It is provided on the first electromagnetic coupling circuit 22 so as to be connected via (not shown). In this way, the first connection wiring 43 of the first height adjustment circuit 44 is electrically connected to the pad electrode 28 c on the upper surface of the first electromagnetic coupling circuit 22.

  The first signal lead wire 45 (FIG. 1) provided on the first connection substrate 49 described later is connected to the strip-like wiring 43b on the top surface of the top plate of the first dielectric 60. A ground lead wire 50 (FIG. 1) to be described later is connected to the ground metal 51 on the top surface of the top plate of the first dielectric 60. As described above, the first connection wiring 43 of the first height adjustment circuit 44 is connected to the first connection lead 43 of the external input circuit 38 via the first signal lead wire 45 on the first connection board 49. It is electrically connected to the external signal line 37.

  By providing the first height adjusting circuit 44 described above on the first electromagnetic coupling circuit 22 so as to match the first electromagnetic coupling circuit 22, an I-shape of the first electromagnetic coupling circuit 22 is provided. The wiring 28a is drawn out to a height position where the external input circuit 38 is disposed. Then, by connecting the first height adjustment circuit 44 and the external input circuit 38 with the first connection conductor 45, the inductance (or resistance, radiation loss) in the first connection conductor 45 can be reduced, Impedance mismatch between the first height adjustment circuit 44 and the external input circuit 38 can be reduced. As a result, impedance mismatch between the first electromagnetic coupling circuit 22 and the external input circuit 38 can be reduced.

  The first height adjusting circuit 44 provided in this way is configured to be a back short circuit between the lead-out wiring 28b and the I-shaped wiring 28a on the upper surface of the first electromagnetic coupling circuit 22. That is, as shown in FIG. 5, the height H of the side wall of the first dielectric 60 (the length H from the lower end of the side wall to the bottom surface of the top plate) is the lead wire 28b of the first electromagnetic coupling circuit 22 and the I-shape. The high-frequency signal transmitted through the wire 28a is suppressed from being radiated to the space S surrounded by the ground metal 51 on the inner surface of the first dielectric 60. Therefore, it is possible to suppress loss in the high-frequency signal lead-out wiring 28b and the I-shaped wiring 28a.

  Here, when the wavelength of the high-frequency signal is λ and the height H is λ / 4, the radiation of the high-frequency signal transmitted through the lead-out wiring 28b and the I-shaped wiring 28a into the space S is most suppressed. Is done. Therefore, the first dielectric 60 is configured such that the height H is substantially λ / 4. Here, the fact that the height H is substantially λ / 4 includes a case where the height H is shifted by α from λ / 4 due to a manufacturing error or the like. That is, the fact that the height H is substantially λ / 4 means that H = (λ / 4) ± α.

  Such a structure is the same on the output side. That is, on the upper surface of the second electromagnetic coupling circuit 33, the second height adjustment circuit 47 having the second connection wiring 46 that electrically connects the second electromagnetic coupling circuit 33 and the external output circuit 40. Is fixed by, for example, silver nanoparticles. By providing the second height adjusting circuit 47 on the second electromagnetic coupling circuit 33 so as to be electrically connected in a matched state with the circuit 33, the I-shape of the second electromagnetic coupling circuit 33 is obtained. The wiring 35a is drawn out to a height position where the external output circuit 40 is disposed. Then, by connecting the second height adjustment circuit 47 and the external output circuit 40 with the second connection conductor 48, the length of the second connection conductor 48 can be shortened, and inductance (or resistance, radiation loss) can be reduced. As well as impedance mismatch between the second height adjustment circuit 47 and the external output circuit 40 can be reduced. As a result, impedance mismatch between the second electromagnetic coupling circuit 33 and the external output circuit 40 can be reduced. Further, the second height adjustment circuit 47 is configured to be a back short of the lead-out wiring 35b and the I-shaped wiring 35a on the upper surface of the second electromagnetic coupling circuit 33. Accordingly, loss in the high-frequency signal lead-out wiring 35b and the I-shaped wiring 35a is also suppressed.

  Please refer to FIG. Since the first height adjustment circuit 44 and the external input circuit 38 are provided at the same height, a wire may be applied as the first connection conductor 45 that connects them. However, in the present embodiment, the first signal lead wire 45 provided on the first connection substrate 49 disposed on the outer peripheral surface of the heat insulating container 18 described later is applied as the first connection conductor 45. Has been. The first signal lead wire 45 connects the first connection wiring 43 of the first height adjustment circuit 44 and the first external signal line 37 of the external input circuit 38. Note that ground lead wires 50 are also provided on both sides of the first signal lead wire 45 on the first connection substrate 49, and these ground lead wires 50 have a first height. The ground metal 51 of the adjustment circuit 44 is connected to the ground line 42 of the external input circuit 38.

  Similarly, since the second height adjustment circuit 47 and the external output circuit 40 are provided at the same height, a wire may be applied as the second connection conductor 48 that connects them. However, in this embodiment, the second signal lead wire 48 provided on the second connection substrate 52 disposed on the outer peripheral surface of the heat insulating container 18 described later is applied as the second connection conductor 48. Has been. The second signal lead wire 48 connects the second connection wiring 46 of the second height adjustment circuit 47 and the second external signal line 39 of the external output circuit 40. Note that ground lead wires 53 are also provided on both sides of the second signal lead wire 48 on the second connection substrate 52, and these ground lead wires 53 have a second height. The ground metal 54 of the adjustment circuit 47 and the grounding line 42 of the external output circuit 40 are connected.

  FIG. 6 is a perspective view showing the cooling body 11 and the high-frequency semiconductor device 10 of the high-frequency semiconductor module according to the embodiment. The high-frequency semiconductor device 10 described above (hereinafter sometimes referred to as the semiconductor device 10) is actually assembled and configured as shown in FIG. Such a semiconductor device 10 is disposed on the cooling body 11. Therefore, the semiconductor device 10 can operate at a low temperature and can improve the NF characteristics.

  FIG. 7 is a cross-sectional view of the high-frequency semiconductor module according to the embodiment. As shown in FIG. 7, in the high-frequency semiconductor module 100 according to the embodiment, the semiconductor device 10 disposed on the cooling body 11 is a heat insulating container whose inside is substantially in a vacuum state except for a part thereof. 18 is covered. The heat insulation container 18 is a metal container comprised, for example by stainless steel (SUS).

  A pipe 55 serving as a flow path for a cooling medium (for example, liquid nitrogen) is provided in the cooling body 11, and the pipe 55 extends from the side surface of the cooling body 11 to the outside. The heat insulating container 18 is fixed to a pipe 55 extending from the cooling body 11 via a heat insulating material 56. That is, the semiconductor device 10 including the cooling body 11 is fixed at a predetermined position in the heat insulating container 18 by the pipe 55. The cooling body 11 may be a so-called refrigerator that actively dissipates heat to the outside.

  FIG. 8 is a perspective view showing a part of a heat insulating container applied to the high frequency semiconductor module according to the embodiment, and FIG. 9 is a high frequency semiconductor module according to the embodiment configured by providing a heat insulating container in the semiconductor device. It is a perspective view which shows the principal part. Note that a part of the heat insulating container illustrated in FIG. 8 is a heat insulating container disposed on the semiconductor device. As shown in FIG. 7, FIG. 8, and FIG. 9 described above, openings 57 are provided at two locations of the heat insulating container 18. The heat insulating container 18 is arranged on the semiconductor device 10 so that each of the first and second height adjusting circuits 44 and 47 is disposed in the opening 57 so as to be separated from the side wall of the opening 57. Is arranged. As shown in FIG. 7, the first and second electromagnetic coupling circuits 22 and 33 are arranged so as to seal the opening 57 of the heat insulating container 18 and are fixed by, for example, silver nanoparticles. By fixing the first and second electromagnetic coupling circuits 22 and 33 in this way, the first and second electromagnetic coupling circuits 22 and 33 are disposed above the internal input circuit 21 and the internal output circuit 32, respectively. The circuits 21 and 32 are arranged apart from each other. Further, by fixing the first and second electromagnetic coupling circuits 22 and 33 in this way, the inside of the heat insulating container 18 is sealed.

  Further, as shown in FIGS. 7 and 9, the first and second connection boards 49 and 52 and the external input / output circuits 38 and 40 are arranged on the outer peripheral surface of the heat insulating container 18 in the vicinity of the opening 57. ing.

  Here, the upper surfaces of the first and second electromagnetic coupling circuits 22 and 33 and the upper surfaces of the external input / output circuits 38 and 40 disposed on the outer peripheral surface of the heat insulating container 18 are of the same height. If the thickness of the heat insulation container 18 is thin, the first and second height adjustment circuits 44 and 47 described above are not necessary. However, if the heat insulating container 18 is made thin in this way, not only a sufficient heat insulating effect is not compensated, but also the mechanical strength of the heat insulating container 18 becomes extremely weak, which may impair the reliability of the high-frequency semiconductor module 100. Therefore, the heat insulation container 18 needs to be comprised with a sufficiently thick metal. As a result, the height positions of the upper surfaces of the first and second electromagnetic coupling circuits 22 and 33 and the upper surfaces of the external input / output circuits 38 and 40 disposed on the outer peripheral surface of the heat insulating container 18 are different. Therefore, as described above, the first and second height adjustment circuits 44 and 47 are required.

  As shown in FIGS. 7 and 8, a plurality of shielding plates 58 extending in the inner direction of the heat insulation container 18 are provided on the inner surface of the heat insulation container 18. On the other hand, as shown in FIGS. 1, 6, and 7, a plurality of locations on the base plate 12 that sandwich the internal input circuit 21 and a plurality of locations that substantially surround the signal processing circuit 13 and the internal output circuit 32 are Each is provided with a groove 59. As shown in FIG. 7, the heat insulating container 18 is arranged such that each shielding plate 58 is inserted into each groove 59 of the base plate 12 so as not to contact the groove 59. By disposing the heat insulating container 18 having the shielding plate 58 in this way, the space between the semiconductor device 10 and the heat insulating container 18 is finely separated electromagnetically without contacting the heat insulating container 18 and the semiconductor device 10. can do. As a result, the inflow of heat from the heat insulating container 18 to the semiconductor device 10 can be suppressed, and the resonance frequency of the space between the semiconductor device 10 and the heat insulating container 18 can be made high enough to be ignored in the use frequency band. .

  In the present embodiment, the shielding plate 58 and the groove 59 separate the space on the internal input circuit 21 of the semiconductor device 10 and the space on the signal processing circuit 13 and the internal output circuit 32 electromagnetically. However, a shielding plate 58 and a groove 59 may be provided so that the space on the signal processing circuit 13 and the space on the internal output circuit 32 are electromagnetically separated.

  FIG. 10 is an enlarged partial cross-sectional view showing a first electromagnetic coupling circuit applied to the high-frequency semiconductor module according to the embodiment and its periphery. As shown in FIG. 10, the first electromagnetic coupling circuit 22 is disposed so as to seal the opening 57 from the inner surface side of the heat insulating container 18. And the 1st electromagnetic coupling circuit 22 is being fixed to the inner surface of the heat insulation container 18 by the silver nanoparticle, for example. Thus, the 1st electromagnetic coupling circuit 22 is arrange | positioned above the internal input circuit 21 in the state supported by the heat insulation container 18 by being fixed to the inner surface of the heat insulation container 18. FIG. Therefore, the distance L between the inner surface of the heat insulating container 18 and the signal processing circuit 13 disposed on the base plate 12 can be increased.

  As shown in FIG. 7, the second electromagnetic coupling circuit 33 is arranged so as to seal the opening 57 from the inner surface side of the heat insulating container 18, similarly to the first electromagnetic coupling circuit 22. For example, it is fixed to the inner surface of the heat insulating container 18 by silver nanoparticles. Thus, the second electromagnetic coupling circuit 33 is disposed above the internal output circuit 32 in a state of being supported by the heat insulating container 18 by being fixed to the inner surface of the heat insulating container 18.

  FIG. 11 is a partial cross-sectional view corresponding to FIG. 10 showing the first electromagnetic coupling circuit applied to the high-frequency semiconductor module according to the comparative example and the periphery thereof in an enlarged manner. As shown in FIG. 11, a support part 1000 for supporting the first electromagnetic coupling circuit 22 is provided at the lower end of the opening part 57 ′ of the heat insulating container 18 ′, and the first electromagnetic coupling circuit 22 is connected to the opening part 57 ′. In the case of supporting by the supporting part 1000 in ′, the distance L ′ between the inner surface of the heat insulating container 18 ′ and the signal processing circuit 13 disposed on the base plate 12 is shorter than the distance L shown in FIG.

  According to the high-frequency semiconductor module 100 according to the embodiment described above, the first and second electromagnetic coupling circuits 22 and 33 are arranged so as to seal the opening 57 from the inner surface side of the heat insulating container 18, and are insulated. It is fixed to the inner surface of the container 18. Therefore, the distance between the heat insulating container 18 and the signal processing circuit 13 (the high frequency semiconductor device 10) can be increased as compared with the high frequency semiconductor module according to the comparative example. As a result, heat can be prevented from flowing from the heat insulating container 18 to the high frequency semiconductor device 10, and the heat insulating property of the high frequency semiconductor module 100 can be improved.

  Furthermore, according to the high frequency semiconductor module 100 according to the embodiment, the distance between the heat insulating container 18 and the signal processing circuit 13 (high frequency semiconductor device 10) can be increased. It can arrange | position so that the container 18 may not be contacted. Therefore, the signal processing circuit 13 can be easily designed.

  Although the embodiment of the present invention has been described above, this embodiment is presented as an example and is not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  For example, the ground metal 51 of the first height adjustment circuit may not be provided on the inner surface of the first dielectric 60. Further, a dielectric may be further provided inside the first dielectric 60. Further, the shape of the first dielectric is not limited to a box shape, and may be a cylindrical shape or a plate shape. Furthermore, the first connection wiring 43 may not be provided so as to penetrate the first dielectric 60, and may be provided on the surface of the first dielectric, for example. Thus, the structure of the first height adjustment circuit is not limited to the structure described above. The same applies to the structure of the second height adjustment circuit.

  Depending on the structure of the first and second height adjustment circuits, the first and second electromagnetic coupling circuits 22 and 33 may not have an electromagnetic shielding effect. The first and second electromagnetic coupling circuits 22 and 33 may be provided with electromagnetic shields.

  Further, although a superconducting circuit is used for the internal input circuit 21 and the internal output circuit 32 is provided integrally with the signal processing circuit 13, a superconducting circuit may be used for the internal output circuit 32 together with the internal input circuit 21. Alternatively, the internal input circuit 21 may be provided integrally with the signal processing circuit 13 and a superconducting circuit may be used only for the internal output circuit 32.

  The internal input circuit 21, the signal processing circuit 13, and the internal output circuit 32 are each disposed on the base plate 12, and are fixed to the base plate 12 by being pressed from above by a fixture 25. Each circuit 21, 13, 32 may be fixed to the base plate 12 with an adhesive or the like.

  Further, the shielding plate 58 provided in the heat insulating container 18 may be a metal spring or the like provided so that a high-frequency signal does not pass through.

10 ... High-frequency semiconductor device (semiconductor device)
DESCRIPTION OF SYMBOLS 11 ... Cooling body 12 ... Base board 13 ... Signal processing circuit 14 ... Insulating substrate 15 ... High frequency semiconductor element (semiconductor element)
16 ... branch / matching circuit 17 ... synthesis / matching circuit 18, 18 '... heat insulating container 19 ... (first) electromagnetic coupling part 20 ... (second) electromagnetic coupling part 21 ... internal input circuit 22 ... first electromagnetic coupling circuit 23 ... superconducting substrate 24 ... wiring 25 ... fixing tool 26 ... connecting conductor 27 ... insulating substrate 28a ... I-shaped wiring 28b ... leading wiring 28c ... pad electrode 29 ... ground metal 30 ... ground metal 31 ... through hole 32 ... internal output circuit 33 ... second electromagnetic Coupling circuit 34... Wiring 35a... I-shaped wiring 35b .. extraction wiring 35c... Pad electrode 36 .. ground metal 37 .. first external signal line 38. Circuit 39 ... second external signal line 40 ... external output circuit 41 ... insulating substrate 4 ... grounding line 43 ... first connection wirings 43a, 43b, 43c ... wiring 44 ... first height adjustment circuit 45 ... first connection conductor (for first signal) Lead)
46 ... second connection wiring 47 ... second height adjustment circuit 48 ... second connection conductor (second signal lead wire)
49... First connection substrate 50... Ground lead wire 51... Ground metal 52... Second connection substrate 53... Ground lead wire 54. ..Pipe 56... Heat insulating material 57, 57 ′. Part

Claims (2)

A cooling body;
A high-frequency semiconductor device disposed on the cooling body;
A heat insulating container containing the cooling body and the high-frequency semiconductor device therein, and having an opening in a part thereof;
A high frequency semiconductor module comprising:
The high-frequency semiconductor device includes:
A base plate disposed on the cooling body;
A signal processing circuit that is provided on the base plate and performs desired signal processing on a high-frequency signal;
An internal circuit provided on the base plate so as to be electrically connected to the signal processing circuit;
An electromagnetic coupling circuit fixed to the inner surface of the heat insulating container so as to seal the opening of the heat insulating container and electrically connected to the internal circuit by electromagnetic coupling;
A height adjusting circuit disposed on the electromagnetic coupling circuit in the opening of the heat insulating container so as to be electrically connected to the circuit;
An external circuit disposed on the outer peripheral surface of the heat insulating container and electrically connected to the height adjustment circuit;
A high frequency semiconductor module comprising:   The high-frequency semiconductor module according to claim 1, wherein the electromagnetic coupling circuit is fixed to the inner surface of the heat insulating container with silver nanoparticles.

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